JP5633475B2 - Power converter - Google Patents

Description

  The present invention relates to a power conversion device that performs AC / DC conversion of power, voltage conversion, and the like.

  2. Description of the Related Art A power conversion circuit that converts DC power to AC power and, conversely, converts AC power to DC power, a so-called inverter is known. A power conversion circuit that boosts or steps down a DC voltage, a so-called boost converter is also known. In some cases, a single power conversion device is configured by combining a plurality of such power conversion circuits that convert power characteristics (AC / DC, voltage, etc.).

  As an example of using the power conversion device, there is a hybrid vehicle including an internal combustion engine and an electric motor as drive sources. A three-phase AC synchronous motor may be used as an electric motor of a hybrid vehicle. This electric motor also functions as a generator that generates electric power by driving the rotating shaft by the inertia of the vehicle. Hereinafter, an electric device corresponding to a concept including an electric motor, a generator, and an electric device that can function as the electric motor and the generator will be described as a rotating electric machine. An inverter is used to drive the rotating electrical machine with a DC power source such as a secondary battery mounted on a vehicle and to charge the secondary battery with electric power regenerated by the rotating electrical machine. In some cases, a boost converter is provided to boost the terminal voltage of the secondary battery and supply it to the motor. Furthermore, a hybrid vehicle including two rotating electric machines is also known, and in this case, an inverter is used corresponding to each of the two electric motors.

  These power conversion circuits are configured using, for example, a semiconductor module incorporating an IGBT element or the like. The following Patent Document 1 describes a device in which terminals of a plurality of semiconductor modules constituting a power conversion device are connected by a bus bar.

JP 2006-295997 A

  When a power conversion device is configured by combining a plurality of power conversion circuits and the semiconductor module terminals of each power conversion circuit are connected by a bus bar, interference due to surge voltage may occur between the plurality of power conversion circuits. is there. It is known that the surge voltage can be reduced by reducing the inductance of the positive bus bar connected to the positive terminal of each semiconductor module and the negative bus bar connected to the negative terminal.

  An object of this invention is to provide the structure for reducing the inductance of at least one of a positive electrode bus bar and a negative electrode bus bar.

  The power conversion device according to the present invention is a power conversion device having a plurality of power conversion circuits each including at least one semiconductor module. The semiconductor modules are stacked, and have a bus bar for connecting the stacked semiconductor modules and capacitors, and a connecting member for connecting the bus bar and terminals of the individual semiconductor modules. The bus bar is provided in common to the semiconductor modules. The connection member is arranged along the edge of the bus bar, and connects the edge of the bus bar where the connection member is arranged and the terminal of each semiconductor module.

  The bus bar has a conversion circuit corresponding area virtually divided corresponding to each of the power conversion devices to which the semiconductor modules connected to the bus bar belong by the connection member. That is, the area of the bus bar to which the connection member connected to the terminal of the semiconductor module belonging to one power conversion circuit is connected is defined as one conversion circuit corresponding area. A conversion circuit corresponding area is defined in one-to-one correspondence with the plurality of power conversion devices. The bus bar has slits cut from the edge where the connection members of the bus bar are arranged between the conversion circuit corresponding regions.

  The bus bar is provided corresponding to each of the positive terminal and the negative terminal of the semiconductor module. A positive electrode bus bar that is a bus bar corresponding to the positive electrode terminal and a negative electrode bus bar that is a bus bar corresponding to the negative electrode terminal are arranged to face each other, and a resin layer is arranged between these bus bars. The resin layer is provided with a resin protrusion penetrating the slit. By crushing the protrusion, a bus bar provided with a slit penetrating the protrusion is caulked and fixed to the resin layer.

  It is known that reducing the surge voltage is effective by making the conductor that becomes the current path thin and wide. In addition, when there are two conductors serving as current paths, it is known that there is an effect by making the directions of currents flowing through these conductors face each other and making them close to each other. In the power conversion device according to the present invention, since the bus bar is fixed by caulking, for example, compared to fixing the bus bar with a bolt or the like, a space for arranging the bolt or the like is not necessary, and each bus bar can be configured widely. it can. Further, the positive electrode bus bar and the negative electrode bus bar are opposed to each other in a wide range, and the proximity arrangement is facilitated.

  Furthermore, the directions of the currents flowing through the positive electrode bus bar and the negative electrode bus bar can be made to face each other. The currents flowing through the bus bars act so as to cancel out sudden changes in the currents flowing through the other bus bars, thereby reducing the inductance of each bus bar.

  A power conversion device according to another aspect of the present invention is a power conversion device having a plurality of power conversion circuits each including at least one semiconductor module, wherein the semiconductor modules are stacked and further stacked. A first bus bar for connecting one of the positive electrode terminal and the negative electrode terminal, and a first bus bar for connecting the other positive electrode terminal and the other negative electrode terminal of the stacked semiconductor modules. The second bus bar, the resin layer disposed between the bus bars of the first bus bar and the second bus bar, and arranged along the edge of the first bus bar, and the edges of the first bus bar and the individual semiconductor modules. A first connection member that connects the one terminal and an edge of the second bus bar, the edge of the second bus bar and each semiconductor module A second connecting member for connecting the other terminal, a. Furthermore, the first bus bar and the second bus bar have conversion circuit corresponding regions defined corresponding to each of the power conversion devices to which the semiconductor modules connected to the bus bar by the corresponding first connection member or second connection member belong. And at least one of the first bus bar and the second bus bar has a slit cut from the edge of the bus bar in at least one between the conversion circuit corresponding regions. The resin layer is provided with a resin protrusion penetrating the slit, and the first bus bar or the second bus bar provided with the slit penetrating the protrusion is caulked. Furthermore, the directions of the currents flowing through the first bus bar and the second bus bar can be made to face each other.

  A power conversion device according to still another aspect of the present invention is a power conversion device having a plurality of power conversion circuits each including at least one semiconductor module, wherein the semiconductor modules are stacked and further stacked semiconductors A first connection plate for connecting one of the positive and negative terminals of the module; a second connection plate for connecting the other positive and negative terminals of the stacked semiconductor modules; Have. The first connection plate extends from the semiconductor module in the stacking direction, and the first connection piece extends from the first bus bar and connects the first bus bar and the corresponding terminal of each semiconductor module. The second connection plate includes a second bus bar portion extending along the stacking direction of the semiconductor modules, and a second bus bar portion extending from the second bus bar portion, and connecting the second bus bar portions and corresponding terminals of the individual semiconductor modules. A second connection piece. The first bus bar portion and the second bus bar portion are disposed facing each other, and a resin layer is disposed between the bus bar portions. Each of the first bus bar portion and the second bus bar portion has a conversion circuit corresponding region defined corresponding to each of the power conversion devices to which the semiconductor module connected via the corresponding first connection piece or second connection piece belongs. At least one of the first bus bar portion and the second bus bar portion has a slit that is cut deeper than a base of the connection piece in at least one of the conversion circuit corresponding regions. The resin layer is provided with a resin protrusion penetrating the slit, and the first connecting plate or the second connecting plate provided with the slit penetrating the protrusion is caulked. . Furthermore, the directions of the currents flowing through the first bus bar portion and the second bus bar portion can be made to face each other.

  With the bus bar fixing method according to the present invention, the bus bar can be widened. In addition, the positive electrode bus bar and the negative electrode bus bar can be arranged close to each other.

It is a circuit block diagram containing the power converter device of this embodiment. It is a perspective view which shows a part of power converter device of this embodiment. It is side surface sectional drawing which shows a part of power converter device of this embodiment. It is a perspective view which shows a positive electrode connection plate and a negative electrode connection plate. It is a side view which shows a positive electrode connection plate and a negative electrode connection plate. It is a top view of a positive electrode connection plate. It is a top view of a negative electrode connection plate. It is a figure which shows the state which mounted | wore the fixed base with the positive electrode connection plate and the negative electrode connection plate. It is sectional drawing by the BB line shown in FIG. It is sectional drawing by CC line shown in FIG. It is a top view which shows the other structure of a negative electrode connection plate. It is a figure which shows the state which mounted | wore the fixed base with the positive electrode connection plate and the negative electrode connection plate.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a circuit configuration diagram including a power conversion device 10 of the present embodiment. FIG. 1 is a diagram showing a circuit configuration of a control system for driving first and second rotating electrical machines 12 and 14 as driving motors for a hybrid vehicle. The two rotating electric machines 12 and 14 are driven to rotate by the electric power from the secondary battery 16, and the electric power generated by the rotating electric machines 12 and 14 is charged in the secondary battery 16. The power converter 10 performs this driving and charging. The power conversion device 10 converts the DC power of the secondary battery 16 into three-phase AC power and boosts the voltage of the secondary battery 16, and converts the AC power generated by the rotating electrical machines 12 and 14 into DC power. And inverters 20 and 22 for converting to. A first inverter 20 is provided for the first rotating electrical machine 12, and a second inverter 22 is provided for the second rotating electricity 14. Boost converter 18 is a power converter or circuit that converts a power characteristic value called voltage, and inverters 20 and 22 are power converters or circuits that convert power characteristics such as AC and DC. The two rotary electric machines 12 and 14 of this embodiment both function as an electric motor and a generator, but may be a rotary electric machine that functions as one of an electric motor and a generator.

  Boost converter 18 includes a semiconductor module 26 including a reactor 24 and a power transistor such as an IGBT. The semiconductor module 26 has a positive terminal 28 connected to the positive terminals of the inverters 20 and 22, a negative terminal 30 connected to the negative terminals of the inverters 20 and 22, and an output terminal 32 connected to the reactor 24.

  The first inverter 20 includes three semiconductor modules 34 having the same structure including power transistors such as IGBTs. Each of the three semiconductor modules 34 corresponds to each phase of the three-phase AC power supplied to the first rotating electrical machine 12. The semiconductor module 34 has a positive electrode terminal 36, a negative electrode terminal 38 and an output electrode terminal 40. The positive terminals 36 of the three semiconductor modules 34 are connected to each other by a positive bus 42, and further connected to the positive terminal 28 of the boost converter by the positive bus 42. On the other hand, the negative terminals 38 of the three semiconductor modules 34 are connected to each other by a negative bus 44, and further connected to the negative terminal 30 of the boost converter by the negative bus 44. The three output electrode terminals 40 are each connected to a three-phase power line that supplies power to the coil of the first rotating electrical machine 12.

  The second inverter 22 includes three semiconductor modules 46 having the same structure including power transistors such as IGBTs. Each of the three semiconductor modules 46 corresponds to each phase of the three-phase AC power supplied to the second rotating electrical machine 14. The semiconductor module 46 has a positive electrode terminal 48, a negative electrode terminal 50, and an output electrode terminal 52. The positive terminals 48 of the three semiconductor modules 46 are connected to each other by a positive bus 42, and further connected to the positive terminal 28 of the boost converter by the positive bus 42. On the other hand, the negative terminals 50 of the three semiconductor modules 46 are connected to each other by a negative bus 44 and further connected to the negative terminal 30 of the boost converter by the negative bus 44. The three output electrode terminals 52 are each connected to a three-phase power line that supplies power to the coil of the second rotating electrical machine 14.

  A smoothing capacitor 54 is disposed between the positive electrode bus 42 and the negative electrode bus 44. Furthermore, the power conversion device 10 includes a control device 56 that controls operations of the boost converter 18 and the first and second inverters 20 and 22. The control device 56 controls the operation of the boost converter 18 and the first and second inverters 20 and 22 by controlling the power transistors of the respective semiconductor modules 26, 34 and 46.

  FIG. 2 is a perspective view showing an overview of a part of the power conversion apparatus 10. The semiconductor modules 26, 34, and 46 of the boost converter 18 and the first and second inverters 20 and 22 are stacked to constitute a semiconductor module unit 58. Preferably, the semiconductor modules 26, 34, 46 are stacked at an equal pitch. Three semiconductor modules 34 belonging to the first inverter 20 and three semiconductor modules 46 belonging to the second inverter 22 are arranged on both sides, and three semiconductor modules 26 belonging to the boost converter 18 are arranged therebetween. ing. The semiconductor modules 34 and 46 belonging to the first and second inverters are a set of three corresponding to the number of phases of the three-phase AC power, but for the boost converter 18, the number of semiconductor modules 26 is limited to three. Not. The number of semiconductor modules 26 is determined by the allowable current value of elements such as transistors belonging to the semiconductor module 26. By increasing the number of semiconductor modules, the current per one can be reduced, and the number of modules is determined based on usage conditions.

  The external appearances of the semiconductor modules 26, 34, and 46 are common, and each terminal is disposed on the upper surface in FIG. In the semiconductor module 34 belonging to the first inverter, as shown in FIG. 2, the positive electrode terminal 36, the negative electrode terminal 38, and the output electrode terminal 40 are arranged in this order from the ridge. Although not shown for simplification, the semiconductor module 26 belonging to the boost converter and the semiconductor module 46 belonging to the second inverter are similarly connected to the positive terminals 28 and 48, the negative terminals 30 and 50, and the output terminal 32 and 52. Arranged in this order. Illustration of wiring connected to each output electrode terminal is omitted. When the semiconductor modules 26, 34, and 46 are stacked at an equal pitch, the terminals are also arranged at an equal pitch.

  The semiconductor module unit 58 further includes a cooler that cools the semiconductor modules 26, 34, and 46. The cooler includes a cooling plate 60 and liquid feeding pipes 62 and 64 which are arranged so as to sandwich the semiconductor modules 26, 34 and 46. The cooling plate 60 is hollow, and the internal space communicates with the liquid feeding pipes 62 and 64. The cooling liquid sent from one liquid feeding pipe 62 is distributed to a plurality of cooling plates 60, flows through each cooling plate 60, and reaches the other liquid feeding pipe 64. The coolant flowing through the cooling plate 60 takes heat from the semiconductor modules 26, 34, and 46, and these semiconductor modules are cooled. The cooling liquid collected in the liquid feeding pipe 64 is sent to a radiator (not shown) via the liquid feeding pipe 64, and is sent again to the cooling plate 60 through the liquid feeding pipe 62 after heat radiation.

  The positive terminals 28, 36, 48 of each semiconductor module are connected to a common positive connection plate 66. The positive electrode connection plate 66 is fixed to and supported by the upper surface of the fixed base 68. The fixed base 68 is fixed to an external member (not shown), for example, a housing that houses the power conversion device 10. In this embodiment, in FIG. 2, the fixing base 68 is fixed to an external member through a bolt in through holes 68a provided at both ends thereof. Further, the negative terminals 30, 38 and 50 are connected to a common negative electrode connection plate 70. The negative electrode connection plate 70 (see FIGS. 3, 4 and 5) is also fixed to and supported by the fixed base 68. In FIG. 2, the negative electrode connection plate 70 does not appear hidden behind the fixed base 68. A method of fixing the positive electrode connection plate 66 and the negative electrode connection plate 70 to the fixing base 68 will be described in detail later.

  The positive connection plate 66 is connected to the capacitor positive terminal 72, and the negative connection plate 70 is connected to the capacitor negative terminal 74. The capacitor positive terminal 72 and the capacitor negative terminal 74 are connected to the capacitor 54 housed in the capacitor case 76 inside the case.

  FIG. 3 is a view showing a cross section orthogonal to the stacking direction of the semiconductor modules 26, 34, and 46. It can also be seen that the capacitor positive terminal 72 and the capacitor negative terminal 74 extend into the capacitor case 76 and are connected to the capacitor 54.

  4 and 5 are views showing the positive electrode connection plate 66 and the negative electrode connection plate 70 extracted. FIG. 6 is a plan view of the positive electrode connection plate 66, and FIG. 7 is a plan view of the negative electrode connection plate 70.

  The positive electrode connection plate 66 includes a plate-like portion 78 extending in the stacking direction of the semiconductor modules and a positive electrode connection piece 80 extending from an edge of the plate-like portion 78 facing the positive terminals 28, 36, 48 of each semiconductor module. . The plate-like portion 78 is a conductor common to the positive terminals 28, 36, and 48 of each semiconductor module, and functions as a so-called bus bar. Hereinafter, this portion is referred to as a positive electrode bus bar portion 78. The positive electrode bus bar portion 78 is a portion surrounded by an alternate long and short dash line in FIG. One positive connection piece 80 is provided for each positive terminal 28, 36, 48, arranged along the stacking direction of the semiconductor modules, and connected to the corresponding positive terminal. When the positive terminals 28, 36, and 48 are arranged at an equal pitch, it is desirable that the positive electrode connection pieces 80 are also arranged at an equal pitch. The positive electrode connection piece 80 extends from the edge 82 of the positive electrode bus bar portion 78 so as to extend the bus bar portion 78, and the distal end portion 81 is bent along a broken line extending in the extending direction. The distal end portion 81 is orthogonal to the plate surface of the bus bar portion 78 and is parallel to the positive terminals 28, 36, and 48 of the semiconductor module. The surface of the tip 81 of the positive electrode connecting piece and the plate surfaces of the plate-like positive terminals 28, 36, and 48 are fixed in close contact with each other.

  The positive electrode bus bar portion 78 is provided with a capacitor connection point 84 to which the capacitor positive electrode terminal 72 is coupled. Capacitor connection points 84 can be provided at two locations, and a concave portion 85 is provided between the capacitor connection points 84 so as to be removed from an edge opposite to the edge 82 provided with the positive electrode connection piece 80. The recess 85 is provided so as to avoid the capacitor negative electrode terminal 74. The capacitor positive electrode terminal 72 and the positive electrode connection plate 66 are coupled by bolts as shown in FIG. In FIG. 2, a bolt 87 is fastened to a nut disposed below the positive electrode connection plate 66, and the positive electrode connection plate 66 and the capacitor positive electrode terminal 72 are coupled. A region around the capacitor connection point 84 of the positive electrode connection plate 66 or the positive electrode bus bar portion 78 is a capacitor connection region connected to the capacitor positive electrode terminal 72.

  The positive electrode connection plate 66 functions as the positive electrode bus 42 that connects the positive terminals 28, 36, and 48 and the capacitor positive terminal 72 of each semiconductor module. The positive electrode bus bar portion 78 and the positive electrode connection piece 80 can be integrally formed by, for example, punching and bending from one sheet metal. Moreover, you may make it connect the connection member provided separately to the positive electrode bus-bar part made from sheet metal. The connecting member may be a member other than sheet metal, for example, a conductive wire.

  The negative electrode connection plate 70 includes a plate-like portion 86 extending in the stacking direction of the semiconductor modules, and a negative electrode connection piece 88 extending from an edge of each of the plate-like portions 86 facing the negative electrode terminals 30, 38, and 50. . The plate-like portion 86 is a conductor common to the negative terminals 30, 38, and 50 of each semiconductor module, and functions as a so-called bus bar. Hereinafter, this portion is referred to as a negative electrode bus bar portion 86. The negative electrode bus bar portion 86 is a portion surrounded by an alternate long and short dash line in FIG. One negative electrode connection piece 88 is provided for each negative electrode terminal 30, 38, 50, arranged along the stacking direction of the semiconductor modules, and connected to the corresponding negative electrode terminal. When the negative electrode terminals 30, 38, 50 are arranged at an equal pitch, it is desirable that the negative electrode connection pieces 88 are also arranged at an equal pitch. The negative electrode connecting piece 88 extends from the edge 90 of the negative electrode bus bar portion 86 so as to extend the bus bar portion 86, and the tip end portion 89 is bent along a fold line extending in the extending direction. The tip portion 89 is orthogonal to the plate surface of the bus bar portion 86 and is parallel to the negative terminals 30, 38, 50 of the semiconductor module. The surface of the tip end portion 89 of the negative electrode connecting piece and the plate surfaces of the plate-like negative electrode terminals 30, 38, 50 are fixed in close contact with each other.

  The negative electrode bus bar portion 86 is provided with a capacitor connection point 92 to which the capacitor negative electrode terminal 74 is coupled. The capacitor connection point 92 is provided at one location, and this position corresponds to the position of the recess 85 provided in the positive electrode connection plate 66. As a result, the capacitor connection point 92 is exposed upward as shown in FIG. 2 or 4, and the negative electrode connection plate 70 can also be fixed by the bolt 93 from above. In FIG. 2, a bolt 93 is fastened to a nut disposed on the lower side of the negative electrode connection plate 70, and the negative electrode connection plate 70 and the capacitor negative electrode terminal 74 are coupled. A region around the capacitor connection point 92 of the negative electrode connection plate 70 or the negative electrode bus bar portion 86 is a capacitor connection region connected to the capacitor negative electrode terminal 74. On both sides of the capacitor connection region in the stacking direction of the semiconductor modules (both sides in the left-right direction in FIG. 7), there are recesses 95 provided so as to be removed from the edge opposite to the edge 90 where the negative electrode connection piece 88 is provided. Is provided. The recess 95 is provided to avoid a bolt 87 used for coupling the positive electrode connection plate 66 and the capacitor positive terminal 72 and a nut to which the bolt 87 is fastened, and provides a portion through which the bolt 87 passes. The recess 95 is provided corresponding to the capacitor connection region around the capacitor connection point 84.

  As shown in FIG. 7, the negative electrode bus bar portion 86 has a wide width around the capacitor connection point 92 and at both ends in the left-right direction in FIG. A wide portion around the capacitor connection point 92 is referred to as a central wide portion 97, and a wide portion at both end portions is referred to as a wide end portion 99. The wide end portions 99 of the negative electrode bus bar portion 86 are opposed to both side end portions of the positive electrode connection plate 66.

  The negative electrode connection plate 70 functions as the negative electrode bus 44 that connects the negative terminals 30, 38, and 50 and the capacitor negative terminal 74 of each semiconductor module. The negative electrode bus bar portion 86 and the negative electrode connection piece 88 can be integrally formed, for example, by punching and bending from one sheet metal. Moreover, you may make it connect the connection member provided separately to the positive electrode bus-bar part made from sheet metal. The connecting member may be a member other than sheet metal, for example, a conductive wire.

  As described above, the number of capacitor connection points 84 and 92 is two in the positive electrode bus bar portion 78 and one in the negative electrode bus bar portion 86, so that both capacitor connection points are provided in two locations. The negative electrode bus bar portion 86 can be reduced in size. Note that the number of capacitor connection points may be one in the positive electrode bus bar portion and two in the negative electrode bus bar portion.

  FIG. 6 shows the positive terminals 28, 36, and 48 of each semiconductor module. In order to distinguish the positive electrode connection piece 80 according to the type of the semiconductor module to which the connection piece is connected, the subscripts a, b, and c are added to the reference numeral 80. That is, the positive connection piece connected to the positive terminal 36 of the semiconductor module belonging to the first inverter 20 is denoted by reference numeral 80a, and the positive connection piece connected to the positive terminal 48 of the semiconductor module belonging to the second inverter 22 is denoted by reference numeral 80b. The positive electrode connection piece connected to the positive electrode terminal 28 of the semiconductor module belonging to the boost converter 18 is denoted by reference numeral 80c.

  Furthermore, for the following description, the positive electrode bus bar portion 78 is virtually divided into regions 94, 96, and 98 corresponding to the distinguished positive electrode connection pieces 80a, 80b, and 80c, respectively. This region is, for example, three regions surrounded by a one-dot chain line shown in FIG. In FIG. 6, the boundaries of the regions 94, 96, and 98 are drawn so as to be orthogonal to the edge 82, but this is for convenience. The region 94 of the positive bus bar portion to which the positive electrode connection piece 80a is connected is a region defined corresponding to the semiconductor module 34 belonging to the first inverter 20, and is hereinafter referred to as a first inverter corresponding region 94. The region 96 of the positive bus bar portion to which the positive electrode connection piece 80b is connected is a region defined corresponding to the semiconductor module 46 belonging to the second inverter 22, and is hereinafter referred to as a second inverter corresponding region 96. The region 98 of the positive bus bar portion to which the positive connection piece 80c is connected is a region defined corresponding to the semiconductor module 26 belonging to the boost converter 18, and is hereinafter referred to as a boost converter corresponding region 98. The positive electrode bus bar part 78 has three virtual regions 94, 96, 98 arranged in the longitudinal direction of the bus bar part, that is, in the stacking direction of the semiconductor modules.

  Each power conversion circuit, that is, the first and second inverters 20 and 22 and the boost converter 18 are controlled separately. On the other hand, the terminals of the semiconductor modules belonging to these power conversion circuits are all connected to the positive and negative electrode connection plates 66 and 70. For this reason, a surge voltage generated in one power conversion circuit may affect another power conversion circuit via the connection plates 66 and 70 and interfere with control. In particular, in the semiconductor module unit 58, the semiconductor modules 26, 34, 46 and the cooling plate 60 are stacked in order to simplify the structure of the cooler. The distance becomes shorter. Surge voltage interference is likely to occur between the first inverter 20 and the second inverter 22.

  In the power conversion device 10, the positive electrode connection plate 66 is provided with a structure that lengthens a current path between the power conversion circuits in order to prevent interference between the power conversion circuits. Specifically, in the bus bar portion 78 of the positive electrode connection plate 66, a slit 100 is provided between the first inverter corresponding region 94 and the boost converter corresponding region 98, and between the second inverter corresponding region 96 and the boost converter corresponding region 98. Is provided with a slit 102. The slit 100 extends inward from the edge 82 of the positive bus bar portion 78 facing the positive terminal of each semiconductor module, along the boundary between the first inverter corresponding region 94 and the boost converter corresponding region 98. The slit 102 extends inward from the edge 82 of the positive bus bar portion along the boundary between the second inverter corresponding region 96 and the boost converter corresponding region 98. The current path between the power conversion circuits is bypassed through the slits 100 and 102 and becomes longer. Even if the positive electrode connection pieces 80 which are connection members are arranged at an equal pitch, the current path between the corresponding regions 94, 96, 98 can be made longer than the current path between the connection members belonging to one corresponding region. it can. These slits 100 and 102 lengthen the current path between the power conversion circuits, so that a surge voltage generated in one power conversion circuit is attenuated while being transmitted to another power circuit, and interference is suppressed.

  The slits 100 and 102 are provided with two capacitor connection points among the positive electrode bus bar part 78 provided with two capacitor connection points 84 and the negative electrode bus bar part 86 provided with one capacitor connection point 92. The capacitor connection point 84 is provided in the positive electrode bus bar portion 78, and is disposed in the vicinity of the extension line in the extending direction of the slits 100 and 102. Therefore, for example, unlike the case where the capacitor connection points 84 are provided at the ends of the bus bars in the arrangement direction of the connection members, the first inverter is provided by the slit while shortening the distance from each terminal to the capacitor connection point 84. Since the current path between the terminal facing the corresponding region 94 and the terminal corresponding to the boost converter corresponding region 98 can be lengthened, the influence of the surge voltage can be suitably reduced.

  The length of the slit 100 can be determined based on the current flowing between the first inverter corresponding region 94 and the boost converter corresponding region 98 and the upper limit value of the heat generation amount of the positive electrode connection plate 66. The heat resistance requirement is determined for each component and member around the positive electrode connection plate 66, and the upper limit value of the heat generation amount of the positive electrode connection plate 66 can be set to satisfy this requirement. When the length of the slit 100 is increased, the remaining width of the positive electrode bus bar portion 78 narrowed by the slit 100 is narrowed, and the amount of heat generated in this portion is increased. The length of the slit 100 is determined so that the amount of generated heat is not more than the upper limit value determined as described above. The length of the slit 102 can be determined similarly.

  The plurality of positive electrode connection pieces 80 of the positive electrode connection plate 66 can also be regarded as being formed by being divided by slits provided in the connection plate. However, the slits 100 and 102 are distinguished from the slits. The slits 100 and 102 are cut deeper from the bottom portion of the slit into which the connecting pieces are separated.

  Wide portions 100a and 102a having an increased width are provided at the ends of the slits 100 and 102, respectively. As will be described later, the positive electrode connection plate 66 is fixed to the fixed base by caulking using the widened portions 100a and 102a.

  8, 9, and 10 are views showing the positive electrode connection plate 66 and the negative electrode connection plate 70 that are integrated with the fixing base 68. 9 is a cross-sectional view taken along the line BB shown in FIG. 8, and FIG. 10 is a cross-sectional view taken along the line CC shown in FIG. The fixed base 68 is made of an insulating material, for example, resin, and is formed so as to wrap the negative electrode bus bar portion 86 of the negative electrode connection plate 70 by insert molding. As a result, the negative electrode bus bar portion 86 is covered with resin, whereby the resin layer 103 is disposed between the positive electrode bus bar portion 78 and the negative electrode bus bar portion 86 or on the surface of the negative electrode bus bar portion 86 facing the positive electrode bus bar portion 78. The A caulking projection 105 is provided on the surface of the resin layer 103 on the positive electrode bus bar portion 78 side. The caulking protrusion 105 may be integrally formed simultaneously with the fixing table 68 when the fixing table 68 is formed. The caulking projection 105 is provided at a position corresponding to the widened portions 100 a and 102 a of the slit of the positive electrode connection plate 66. The caulking projection 105 has a tapered shape such as a cone or a truncated cone shape at the time of molding. When the positive electrode connection plate 66 is fixed to the fixing base 68, the widened portions 100a and 102a are attached to the tapered caulking projection 105 together. At this time, the caulking projection 105 passes through the slits 100 and 102 and extends in a direction intersecting the plate surface of the positive electrode bus bar portion 78. Thereafter, the tip of the caulking protrusion 105 protruding from the plate surface of the positive electrode bus bar portion 78 is crushed and caulked as shown in FIGS. 9 and 10, and the positive electrode connection plate 66 is fixed to the fixing base 68. Thereby, the positive electrode bus bar part 78 and the negative electrode bus bar part 86 are arranged in parallel.

  When the positive electrode connection plate 66 is to be fixed to the fixing base 68 using a bolt, the bolt is penetrated from one of the front and back sides of the positive electrode connection plate 66 and coupled to a member having a screw hole such as a nut disposed on the other side of the front and back surfaces. I will let you. In order to arrange fastening elements such as bolts and nuts, it is necessary to provide holes and cuts in the negative electrode connection plate 70 so as to avoid the fastening elements. For example, it is necessary to make a hole in the wide end portion 99 of the negative electrode connection plate, or to narrow the width of the wide end portion 99. However, as in this embodiment, it is not necessary to adopt a mode for avoiding a fastening element such as a hole in the negative electrode connection plate 70 by fixing with the caulking protrusion 105 provided on the fixing base 68, and the negative electrode connection plate, particularly the negative electrode bus bar. The area of the portion 86 can be increased. By widening the area of the bus bar portion, the inductance can be reduced and the surge interference voltage can be reduced.

  Further, if the positive and negative electrode connection plates 66 and 70 are arranged so as to sandwich fastening elements such as bolts and nuts, the area of these plates can be widened. Spread. However, if fixed by caulking according to the present embodiment, the positive electrode and the negative electrode connection plates 66 and 70, particularly the positive electrode and the negative electrode bus bar portions 78 and 86 can be brought close to the thickness of the resin layer 103. As described above, the area of the negative electrode bus bar portion 86 can be increased, and thereby the area of the portion where the two plates face each other can also be increased. Portions other than the connection region of the positive electrode bus bar portion 78 and the negative electrode bus bar portion 86 to the capacitor positive electrode terminal 72 and the capacitor negative electrode terminal 74 can be regions facing each other. Since the capacitor connection points 84 and 92 of the positive and negative bus bar portions 78 and 86 are located in the vicinity of the center of the bus bar portion in the left and right directions of FIGS. 6 and 7, the direction of the current flowing through the positive and negative bus bar portions 78 and 86 is Nearly opposite. Therefore, since the magnetic field generated by one current acts so as to cancel the other current, an effect of mutually suppressing inductance can be obtained. As described above, by bringing the positive electrode and negative electrode bus bar portions 78 and 86 closer, the inductance can be reduced and the surge interference voltage can be reduced.

  In this embodiment, widened portions 100a and 102a are provided in the slits 100 and 102, and are caulked here. However, if sufficient caulking strength can be obtained, the slit width is not expanded, and the protrusion is penetrated. Caulking may be performed. Further, caulking may be performed at a portion other than the tip in the slit. The cross-sectional shape of the protrusions in these cases can be a rectangle or an ellipse that is long in the direction in which the slit extends. Moreover, you may replace the positive electrode and negative electrode of this embodiment. That is, the connection plate 66 of the embodiment may be connected to the negative terminals of the semiconductor modules 26, 34, 46 and the connection plate 70 may be connected to the positive terminals of the semiconductor modules 26, 34, 46. Further, caulking protrusions may be provided corresponding to only a part of the plurality of slits to perform caulking.

  In the power conversion device 10, the negative electrode connection plate 70 does not employ a structure in which a current path such as a slit is elongated, but can be employed in the same manner as the positive electrode connection plate 66. When a slit is provided in the negative electrode connection plate, the negative electrode connection plate can be fixed to the fixing base 68 by caulking using the slit. This aspect will be described below.

  FIG. 11 is a diagram showing the configuration of the negative electrode connection plate 108 provided with slits. About the structure which is common with the negative electrode connection plate 70, the same code | symbol is attached | subjected and the description is abbreviate | omitted. In order to distinguish the negative electrode connection pieces 88 according to the type of the semiconductor module to which these connection pieces are connected, suffixes a, b, and c are added to the reference numeral 88. That is, the negative connection piece connected to the negative terminal 38 of the semiconductor module belonging to the first inverter 20 is denoted by reference numeral 88a, and the negative connection piece connected to the negative terminal 50 of the semiconductor module belonging to the second inverter 22 is denoted by reference numeral 88b. The negative electrode connection piece connected to the negative electrode terminal 30 of the semiconductor module belonging to the boost converter 18 is denoted by reference numeral 88c.

  Further, for the following description, the negative electrode bus bar portion 86 is virtually divided into regions 110, 112, and 114 corresponding to the distinguished negative electrode connection pieces 88a, 88b, and 88c, respectively. This region is, for example, a region surrounded by an alternate long and short dash line shown in FIG. In FIG. 11, the boundaries of the regions 110, 112, and 114 are drawn so as to be orthogonal to the edge 90, but this is for convenience. The area 110 of the negative electrode bus bar portion to which the negative electrode connection piece 88a is connected is an area defined corresponding to the semiconductor module 34 belonging to the first inverter 20, and is hereinafter referred to as a first inverter corresponding area 110. The region 112 of the negative electrode bus bar portion to which the negative electrode connection piece 88 b is connected is a region defined corresponding to the semiconductor module 46 belonging to the second inverter 22, and is hereinafter referred to as a second inverter corresponding region 112. The region 114 of the negative electrode bus bar portion to which the negative electrode connection piece 88c is connected is a region defined corresponding to the semiconductor module 26 belonging to the boost converter 18, and is hereinafter referred to as a boost converter corresponding region 114. The negative electrode bus bar portion 86 has three virtual regions 110, 112, and 114 arranged in the longitudinal direction of the bus bar portion, that is, in the stacking direction of the semiconductor modules.

  Similarly to the positive electrode connection plate 66, the negative electrode connection plate 108 is also provided with a structure in which the current path between the power conversion circuits is lengthened in order to prevent interference between the power conversion circuits. Specifically, in the bus bar portion 86 of the negative electrode connection plate 108, a slit 116 is provided between the first inverter corresponding region 110 and the boost converter corresponding region 114, and between the second inverter corresponding region 112 and the boost converter corresponding region 114. Is provided with a slit 118. The slit 116 extends inward from the edge 90 of the negative electrode bus bar portion 86 facing the negative electrode terminal of each semiconductor module, along the boundary between the first inverter corresponding region 110 and the boost converter corresponding region 114. The slit 118 extends inward from the edge 90 of the negative electrode bus bar portion along the boundary between the second inverter corresponding region 112 and the boost converter corresponding region 114. The current path between the power conversion circuits becomes long by bypassing the slits 116 and 118. Even if the negative electrode connection pieces 88 as connection members are arranged at an equal pitch, the current path between the corresponding regions 110, 112, and 114 can be made longer than the current path between connection members belonging to one corresponding region. it can. These slits 116 and 118 lengthen the current path between the power conversion circuits, so that the surge voltage generated in one power conversion circuit is attenuated while being transmitted to another power circuit, and interference is suppressed. The length of the slits 116 and 118 can be determined from the heat resistance requirements of surrounding components and the amount of heat generated by the negative electrode connection plate 108, as in the case of the slits 100 and 102 of the positive electrode connection plate 66 described above.

  Wide portions 116a and 118a with increased widths are provided at the ends of the slits 116 and 118, respectively. The fixed base 68 can be formed by insert molding by inserting the negative electrode connection plate 108 having the slit. Similarly to the positive electrode connection plate 66, the negative electrode connection plate 108 can be fixed to the fixing base 119 by caulking using the widened portions 116 a and 118 a.

  FIG. 12 is a cross-sectional view showing a state in which the positive and negative electrode connection plates 66 and 108 are fixed to the fixing base 119 by caulking. The fixing base 119 is different from the above-described fixing base 68 in the method of fixing the negative electrode connection plate, but the other functions are the same as those of the fixing base 68. The positive and negative electrode connection plates 66 and 108 are disposed above and below the fixed base 119. The fixing base 119 is interposed between the positive electrode negative electrode connecting plate, particularly the positive electrode bus bar portion 78 and the negative electrode bus bar portion 86, and becomes a resin layer 121 that insulates between them. The resin layer 121 covers the surface of the negative electrode bus bar portion 86 that faces the positive electrode bus bar portion 78. A caulking protrusion 105 is integrally formed on the surface of the resin layer 121 on the positive electrode bus bar portion 78 side, and a caulking protrusion 123 is integrally formed on the surface of the negative electrode bus bar portion 86 side. The caulking protrusion 105 is the same as that shown in FIGS. The caulking protrusion 123 is provided at a position corresponding to the widened portions 116 a and 118 a formed on the negative electrode connection plate 108. The caulking protrusion 123 has a tapered shape such as a cone or a truncated cone shape at the time of molding. When the negative electrode connection plate 108 is fixed to the fixing base 119, the widened portions 116 a and 118 a are attached to the tapered caulking protrusion 123. Thereafter, the tip of the caulking protrusion 123 is crushed and caulked as shown in FIG. 12, and the negative electrode connection plate 108 is fixed to the fixing base 119.

  Widened portions 116a and 118a are provided in the slits 116 and 118, and caulking is performed here. However, if sufficient caulking strength is obtained, the slits may not be expanded and caulking may be performed by penetrating the protrusions. Good. In this case, caulking may be performed at a portion other than the tip in the slit. Moreover, you may replace the positive electrode and negative electrode of this embodiment. That is, the connection plate 66 according to the embodiment may be connected to the negative terminals of the semiconductor modules 26, 34, 46, and the connection plate 108 may be connected to the positive terminals of the semiconductor modules 26, 34, 46.

  In the above embodiment, the slits 100, 102, 116, and 118 are linearly formed along a direction orthogonal to the stacking direction of the semiconductor modules, but are formed in a direction inclined with respect to the orthogonal direction. It may also be formed in a curved line or a polygonal line. Moreover, you may make it the length of a slit differ.

  In addition, the arrangement of the power conversion circuits (first converter, boost converter, second converter) is not limited to the example of the above embodiment. For example, the semiconductor module group constituting the first converter, the semiconductor module group constituting the second inverter, and the semiconductor module group constituting the boost converter may be stacked and arranged in this order. In this case, the slit length between the first inverter corresponding region and the second inverter corresponding region may be shorter than the slit length between the second inverter corresponding region and the boost converter corresponding region, or the first inverter corresponding region and the second inverter corresponding region. It is not necessary to provide a slit between the inverter corresponding regions. Even in this case, when the boost converter is greatly affected by the surge, the boost converter and the first inverter are separated from each other on the bus bar, so that the influence of the surge voltage is suitably suppressed without increasing the current path. It is also possible. In addition, it is also possible to interchange the semiconductor module group which comprises a 1st inverter, and the semiconductor module group which comprises a 2nd inverter.

  The power conversion device 10 includes three power conversion circuits, that is, two inverters and one boost converter, but also in a power conversion device including two or four or more power conversion circuits, The present invention is applicable. A structure in which a current path such as a slit is elongated is provided between the conversion circuit corresponding regions on the bus bar corresponding to the power conversion circuit in which surge voltage interference is likely to occur. It is also possible to provide slits or the like at all the boundaries between adjacent conversion circuit corresponding regions.

Preferred embodiments of the present invention are described below.
(1)
A first inverter having three semiconductor modules;
A second inverter having three semiconductor modules;
A positive electrode connection plate for connecting a positive terminal and a capacitor of each semiconductor module constituting the first and second inverters;
A negative electrode connection plate for connecting a negative electrode terminal and a capacitor of each semiconductor module constituting the first and second inverters;
Have
The semiconductor modules belonging to the first and second inverters are stacked,
The positive electrode connection plate includes a positive electrode bus bar portion extending along the stacking direction of the semiconductor modules, and a positive electrode connection piece extending from the positive electrode bus bar portion and connecting the positive electrode bus bar portion and the positive electrode terminal of the semiconductor module,
The negative electrode connection plate includes a negative electrode bus bar portion extending along the stacking direction of the semiconductor modules, and a negative electrode connection piece extending from the negative electrode bus bar portion and connecting the negative electrode bus bar portion and the negative electrode terminal of the semiconductor module,
The positive electrode bus bar part and the negative electrode bus bar part are arranged facing each other, the negative electrode bus bar part is covered with a resin member,
The positive electrode bus bar part and the negative electrode bus bar part are respectively connected to a first inverter corresponding region which is a part connected to a connection piece connected to a terminal of the semiconductor module belonging to the first inverter and a terminal of the semiconductor module belonging to the second inverter. A second inverter corresponding region that is a portion connected to the connection piece,
Between the first inverter corresponding region and the second inverter corresponding region of the positive electrode bus bar portion, a slit cut deeper than the base of the connection piece is provided,
The resin member is provided with a resin protrusion penetrating the slit,
The positive connection plate is crimped by crushing the protrusion,
Power conversion device.

(2)
The power conversion device according to (1) above,
At least one semiconductor module belonging to the boost converter is disposed between the semiconductor module belonging to the first inverter and the semiconductor module belonging to the second inverter in the stacking direction of the semiconductor modules,
The positive electrode connection plate has a positive electrode connection piece for connecting the positive electrode bus bar portion and the positive electrode terminal of each semiconductor module belonging to the boost converter,
The negative electrode connection plate has a negative electrode connection piece for connecting the negative electrode bus bar portion and the negative electrode terminal of each semiconductor module belonging to the boost converter,
Each of the positive bus bar portion and the negative bus bar portion includes a boost converter corresponding region that is a portion connected to a connection piece connected to a terminal of a semiconductor module belonging to the boost converter,
The slit is provided between at least one of the first inverter corresponding region and the boost converter corresponding region and between the second inverter corresponding region and the boost converter corresponding region.
Power conversion device.

(3)
The power conversion device according to (1) or (2) above, wherein the directions of currents flowing through the positive electrode bus bar portion and the negative electrode bus bar portion are opposed to each other.

(4)
A first inverter having three semiconductor modules;
A second inverter having three semiconductor modules;
A positive electrode connection plate for connecting a positive terminal and a capacitor of each semiconductor module constituting the first and second inverters;
A negative electrode connection plate for connecting a negative electrode terminal and a capacitor of each semiconductor module constituting the first and second inverters;
Have
The semiconductor modules belonging to the first and second inverters are stacked,
The positive electrode connection plate has positive electrode connection pieces separated by first slits cut from edges along the stacking direction of the semiconductor modules, and each of the positive electrode connection pieces is connected to a positive electrode terminal of an individual semiconductor module,
The negative electrode connection plate has a negative electrode connection piece divided by a first slit cut from an edge along the stacking direction of the semiconductor modules, and each of the negative electrode connection pieces is connected to a negative electrode terminal of an individual semiconductor module,
The positive electrode connection plate and the negative electrode connection plate have a portion arranged to face each other, and the portion of the negative electrode connection plate arranged to face is covered with a resin member,
A second slit is further deeply provided at the back of at least one first slit provided between the connection piece related to the first inverter and the connection piece related to the second inverter of the positive electrode connection plate,
The resin member is provided with a resin protrusion penetrating the second slit,
The positive connection plate is crimped by crushing the protrusion,
Power conversion device.

(5)
A first inverter having three semiconductor modules;
A second inverter having three semiconductor modules;
A boost converter having at least one semiconductor module;
A positive electrode connection plate for connecting the positive terminal of each semiconductor module belonging to the first and second inverters and the boost converter and a capacitor;
A negative electrode connection plate for connecting a negative terminal and a capacitor of each semiconductor module belonging to the first and second inverters and the boost converter;
Have
The semiconductor module is stacked so that the semiconductor module belonging to the boost converter is disposed between the semiconductor module belonging to the first inverter and the semiconductor module belonging to the second inverter,
The positive electrode connection plate has positive electrode connection pieces separated by first slits cut from edges along the stacking direction of the semiconductor modules, and each of the positive electrode connection pieces is connected to a positive electrode terminal of an individual semiconductor module,
The negative electrode connection plate has a negative electrode connection piece divided by a first slit cut from an edge along the stacking direction of the semiconductor modules, and each of the negative electrode connection pieces is connected to a negative electrode terminal of an individual semiconductor module,
The positive electrode connection plate and the negative electrode connection plate have a portion arranged to face each other, and the portion of the negative electrode connection plate arranged to face is covered with a resin member,
At least one of the first slit that separates the connection piece related to the first inverter and the connection piece related to the boost converter, the connection piece related to the second inverter, and the first slit that separates the connection piece related to the boost converter. Is further provided with a second slit,
The resin member is provided with a resin protrusion penetrating the second slit,
The positive connection plate is crimped by crushing the protrusion,
Power conversion device.

(6)
The power conversion device according to (4) or (5), wherein the directions of the currents flowing through the portions of the positive electrode connection plate and the negative electrode connection plate that face each other face each other.

  DESCRIPTION OF SYMBOLS 1 Power converter, 18 Boost converter, 20 1st inverter, 22 2nd inverter, 26 Semiconductor module, 28 Positive terminal, 30 Negative terminal, 34 Semiconductor module, 36 Positive terminal, 38 Negative terminal, 46 Semiconductor module, 48 Positive terminal 50 negative electrode terminal, 54 capacitor, 56 control device, 58 semiconductor module unit, 66 positive electrode connection plate, 68 fixing base, 70 negative electrode connection plate, 72 capacitor positive electrode terminal, 74 capacitor negative electrode terminal, 78 positive electrode bus bar, 80 positive electrode connection piece , 82 Edge of the positive bus bar portion, 94 First inverter corresponding region, 96 Second inverter corresponding region, 98 Boost converter corresponding region, 100, 102 Slit, 100a, 102a Widened portion, 103 Resin layer, 105 Caulking protrusion.

Claims (5)

A power conversion device having a plurality of power conversion circuits each including at least one semiconductor module,
The semiconductor modules are stacked,
further,
A first bus bar and a second bus bar, which are common to the semiconductor module, for connecting the stacked semiconductor module and the capacitor, the first bus bar and the second bus bar being arranged facing each other;
A resin layer disposed between the first bus bar and the second bus bar;
A first connecting member that is arranged along an edge of the first bus bar, and connects the edge of the first bus bar to one of the positive terminal and the negative terminal of each semiconductor module;
A second connecting member that is arranged along an edge of the second bus bar and connects the edge of the second bus bar to the positive terminal and the other of the negative terminal of each semiconductor module;
Have
Each of the first bus bar and the second bus bar has a conversion circuit corresponding region defined corresponding to each of the power conversion devices to which the semiconductor module connected to the bus bar by the corresponding first connection member or the second connection member belongs. ,
At least one of the first bus bar and the second bus bar has a slit cut from the edge of the bus bar in at least one of the conversion circuit corresponding regions,
The resin layer is provided with a resin protrusion penetrating the slit,
The first bus bar or the second bus bar provided with the slit through which the projection penetrates is caulked,
Power conversion device. A power conversion device having a plurality of power conversion circuits each including at least one semiconductor module,
The semiconductor modules are stacked,
further,
A first bus bar for connecting one of the positive and negative terminals of the stacked semiconductor modules;
A second bus bar disposed opposite to the first bus bar for connecting the other terminals of the positive electrode terminal and the negative electrode terminal of the stacked semiconductor modules;
A resin layer disposed between the bus bars of the first bus bar and the second bus bar;
A first connecting member that is arranged along an edge of the first bus bar, and connects the edge of the first bus bar and the one terminal of each semiconductor module;
A second connecting member arranged along an edge of the second bus bar and connecting the edge of the second bus bar and the other terminal of each semiconductor module;
Have
The direction of the current flowing through the first bus bar and the second bus bar is opposite,
Each of the first bus bar and the second bus bar has a conversion circuit corresponding region defined corresponding to each of the power conversion devices to which the semiconductor module connected to the bus bar by the corresponding first connection member or the second connection member belongs. ,
At least one of the first bus bar and the second bus bar has a slit cut from the edge of the bus bar in at least one of the conversion circuit corresponding regions,
The resin layer is provided with a resin protrusion penetrating the slit,
The first bus bar or the second bus bar provided with the slit through which the projection penetrates is caulked,
Power conversion device.   3. The power conversion device according to claim 1, wherein directions of currents flowing through the first bus bar and the second bus bar are opposite to each other. A power conversion device having a plurality of power conversion circuits each including at least one semiconductor module,
The semiconductor modules are stacked,
further,
A first connection plate for connecting one terminal of the positive and negative terminals of the stacked semiconductor modules;
A second connection plate for connecting the other terminals of the positive and negative terminals of the stacked semiconductor modules;
Have
The first connection plate extends from the semiconductor module in the stacking direction, and the first connection piece extends from the first bus bar and connects the first bus bar and the corresponding terminal of each semiconductor module. And including
The second connection plate extends from the second bus bar portion extending in the stacking direction of the semiconductor modules, and the second connection piece extends from the second bus bar portion and connects the second bus bar portion and corresponding terminals of the individual semiconductor modules. And including
The first bus bar part and the second bus bar part are arranged facing each other, and a resin layer is arranged between these bus bar parts,
Each of the first bus bar portion and the second bus bar portion has a conversion circuit corresponding region defined corresponding to each of the power conversion devices to which the semiconductor module connected via the corresponding first connection piece or second connection piece belongs. ,
At least one of the first bus bar portion and the second bus bar portion has a slit that is cut deeper than a base of the connection piece in at least one of the conversion circuit corresponding regions,
The resin layer is provided with a resin protrusion penetrating the slit,
The first connection plate or the second connection plate provided with the slit through which the protrusion penetrates is squeezed,
Power conversion device.   5. The power conversion device according to claim 4, wherein directions of currents flowing through the first bus bar portion and the second bus bar portion are opposed to each other.

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