JP5624858B2 - Pattern formation method - Google Patents

Description

  In the present invention, after a first resist pattern is formed using the first chemically amplified positive resist composition, a pattern reversal composition is applied thereon to form a pattern reversal film, and alkali development The present invention relates to a pattern forming method for forming a pattern in which the image of the first resist pattern is reversed on the pattern reversal film.

A technique (pattern formation technique) for forming a fine pattern on a support and etching the lower layer of the pattern by using this as a mask is widely adopted for the creation of IC devices in the semiconductor field. Has attracted attention.
The fine pattern is usually made of an organic material, and is formed by a technique such as a lithography method or a nanoimprint method. For example, in a lithography method, a resist film made of a resist material is formed on a support such as a substrate, and the resist film is subjected to selective exposure with radiation such as light or an electron beam, followed by development processing. Thus, a step of forming a resist pattern having a predetermined shape on the resist film is performed. And a semiconductor element etc. are manufactured through the process of processing a board | substrate by an etching using the said resist pattern as a mask. A resist material in which the solubility of the exposed portion in the developer increases is referred to as a positive type, and a resist material in which the solubility of the exposed portion in the developer decreases is referred to as a negative type.
In recent years, pattern miniaturization is rapidly progressing due to the advancement of lithography technology. As a technique for miniaturizing a resist pattern, the exposure light source is generally shortened in wavelength. Specifically, conventionally, ultraviolet rays typified by g-line and i-line have been used, but now mass production of semiconductor elements using KrF excimer laser and ArF excimer laser has been started. Lithography using an ArF excimer laser enables pattern formation with a resolution of 45 nm level. In addition, in order to further improve the resolution, studies have been made on F ₂ excimer lasers, electron beams, EUV (extreme ultraviolet rays), X-rays, and the like having shorter wavelengths than these excimer lasers.
Resist materials are required to have lithography characteristics such as sensitivity to these exposure light sources and resolution capable of reproducing a pattern with fine dimensions. As a resist material that satisfies such requirements, a chemically amplified resist composition containing an acid generator that generates an acid upon exposure is used. In general, the chemically amplified resist composition is mixed with a base material component whose solubility in an alkaline developer is changed by the action of an acid, together with the acid generator. For example, as a base material component of a positive chemically amplified resist, a material whose solubility in an alkaline developer is increased by the action of an acid is used (for example, see Patent Document 1).
Resins are mainly used as the base component of the chemically amplified resist composition.

As one of the methods for further improving the resolution, exposure (immersion exposure) is performed by interposing a liquid (immersion medium) having a higher refractive index than air between the objective lens of the exposure machine and the sample. A so-called immersion lithography (hereinafter referred to as “immersion exposure”) is known (for example, see Non-Patent Document 1).
According to immersion exposure, even when a light source having the same exposure wavelength is used, the same high resolution as when using a light source with a shorter wavelength or using a high NA lens can be achieved, and the depth of focus can be reduced. It is said that there is no decline. In addition, immersion exposure can be performed by applying an existing exposure apparatus. For this reason, immersion exposure is expected to be able to form resist patterns with low cost, high resolution, and excellent depth of focus. In particular, in terms of lithography characteristics such as resolution, the semiconductor industry is attracting a great deal of attention.
Immersion exposure is effective in forming all pattern shapes, and can be combined with super-resolution techniques such as the phase shift method and the modified illumination method that are currently being studied. Currently, as an immersion exposure technique, a technique mainly using an ArF excimer laser as a light source is being actively researched. Currently, water is mainly studied as an immersion medium.

One recently proposed lithography technique is a double patterning process in which a resist pattern is formed by performing patterning twice or more (see, for example, Non-Patent Documents 2 to 3).
There are several types of double patterning processes. For example, (1) a method of forming a pattern by repeating a lithography step (from application of a resist composition to exposure and development) and an etching step twice or more, and (2) a lithography step There is a method of repeating the above twice or more.
Formation of the pattern by the method (1) is performed, for example, according to the following procedure. First, a laminate in which a substrate, an underlayer film, and a hard mask are laminated is prepared. Next, a resist film is provided on the hard mask, and the resist film is selectively exposed through a photomask and developed, whereby a plurality of resist patterns of a predetermined size are arranged at predetermined positions. One resist pattern is formed. Next, after etching the hard mask using the first resist pattern as a mask, the remaining first resist pattern is removed. Thereby, a hard mask to which the first resist pattern is transferred is obtained. Next, by applying a resist composition on the hard mask, a resist film that fills the voids in the hard mask is formed. Then, the resist film is selectively exposed through a photomask having a different pattern arrangement and developed to form a second resist pattern. Next, after etching the hard mask using the second resist pattern as a mask, the remaining second resist pattern is removed. Thereby, a hard mask to which the first resist pattern and the second resist pattern are transferred is obtained. By performing etching using this hard mask as a mask, the pattern of the hard mask is transferred to the lower layer film, and as a result, a pattern having a narrower pitch than the photomask used is formed.
In the method (2), for example, a first resist film is formed on a support, and a plurality of resist patterns (first resist patterns) are formed by patterning the first resist film. A second resist material is applied thereon to form a second resist film that fills the gaps between the plurality of resist patterns, and the second resist film is patterned.
According to these double patterning processes, even if a light source having the same exposure wavelength is used or the same resist composition is used, the resolution is higher than that in the case of forming in one lithography process (single patterning). It is possible to form a resist pattern. The double patterning process can be performed using an existing exposure apparatus.

  Further, as a recently proposed lithography technique, there is a resin having a repeating unit having a structure having an acid labile group that is eliminated by an acid, and being soluble in an alkali developer by the elimination of the acid labile group. A composition for forming a chemically amplified positive resist film, comprising a photoacid generator that generates an acid upon exposure to high energy rays, a thermal acid generator that generates an acid upon heating, and an organic solvent. A step of obtaining a positive type pattern, exposing or heating the positive type pattern obtained in the step and removing the acid labile group of the resin in the positive type pattern by acid or heat to dissolve the alkali And by forming a crosslink in the resin in such a range that the solubility in an alkaline wet etching solution is not lost, the organic solution used in the composition for forming a film for reversal in the positive pattern is formed. Using positive / negative reversal, including a step of imparting resistance to the above, a step of forming a reversal film using a composition for forming a reversal film, and a step of dissolving and removing the above-mentioned cross-linked positive pattern with an alkaline wet etching solution A pattern forming method has been proposed (see Patent Document 2).

JP 2003-241385 A JP 2009-211036 A

Proceedings of SPIE, 5754, 119-128 (2005). Proceedings of SPIE, 5256, 985-994 (2003). Proceedings of SPIE, 6153, 615301-1-19 (2006).

When a space pattern or hole pattern is formed on a resist film, light that is forced to form a pattern under a weak light incident intensity compared to the case of forming a line pattern or dot pattern, and is incident on an exposed area and an unexposed area, respectively. The contrast of intensity is small. For this reason, the resolution and lithography margin in resist pattern formation (for example, allowance for exposure dose (EL margin), allowance for depth of focus (DOF margin), pattern shape verticality, etc.) are likely to be limited, and high resolution is achieved. It tends to be difficult to form an image resist pattern.
As a technique capable of forming a high-resolution resist pattern, it is conceivable to use a double patterning process as described above. However, in the double patterning process as described above, in the method (1), in order to form a pattern on the substrate, the resist film is patterned at least twice, and the underlying hard mask is etched at least twice. The increase in the number of processes, the amount of chemicals used, and the accompanying increase in manufacturing costs are problematic. The method (2) is suitable for forming a line and space pattern, but is not suitable for forming an isolated space pattern (trench pattern) or a hole pattern.

  Moreover, in the pattern formation method described in Patent Document 2, it is necessary to newly provide an exposure step for generating an acid from a photoacid generator after obtaining a positive pattern. Further, when a thermal acid generator is used, in the formation of a positive pattern (first resist pattern), the contrast is weakened due to the influence of the acid generated from the thermal acid generator by post-exposure heating, and the resolution is lowered. There is a risk of causing problems such as inability to form a pattern. Further, since it is necessary to select a resin capable of forming a crosslink as the resin to be blended with the composition for forming a chemically amplified positive resist film used for forming a positive pattern, a chemically amplified positive resist composition that is usually used. Cannot be used as is.

Therefore, a new technology that can form a pattern such as a space pattern and a hole pattern with a high resolution with a simple method with as few steps as possible using a commonly used chemically amplified positive resist composition. Is required.
This invention is made | formed in view of the said situation, Comprising: It aims at providing the pattern formation method useful for formation of a fine pattern.

In order to solve the above problems, the present invention employs the following configuration.
That is, in the pattern forming method of the present invention, a first chemically amplified positive resist composition is coated on a support to form a first resist film, the first resist film is exposed, and exposure is performed. A step (1) of performing post-baking and alkali development to form a first resist pattern, a step (2) of cleaning the first resist pattern with an acidic lithography cleaning solution, and the cleaning Step (3) for baking the subsequent first resist pattern, and a pattern reversal composition containing an organic solvent that does not dissolve the first resist film on the support on which the first resist pattern is formed objects coated to form a pattern reversal film, possess a step (4) to form a resist pattern by removing the first resist pattern by alkali development, the lithographic Use washing liquid, characterized by an acidic solution der Rukoto containing a surfactant.

In the present specification and claims, the “alkyl group” includes linear, branched and cyclic monovalent saturated hydrocarbon groups unless otherwise specified.
Unless otherwise specified, the “alkylene group” includes linear, branched and cyclic divalent saturated hydrocarbon groups.
The “lower alkyl group” is an alkyl group having 1 to 5 carbon atoms.
The “halogenated alkyl group” is a group in which part or all of the hydrogen atoms of the alkyl group are substituted with a halogen atom, and examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
“Aliphatic” is a relative concept with respect to aromatics, and is defined to mean groups, compounds, etc. that do not have aromaticity.
The “structural unit” means a monomer unit (monomer unit) constituting a polymer compound (polymer, copolymer).
“Exposure” is a concept including general irradiation of radiation.

“(Meth) acrylic acid” means one or both of acrylic acid having a hydrogen atom bonded to the α-position and methacrylic acid having a methyl group bonded to the α-position.
“(Meth) acrylic acid ester” means one or both of an acrylic acid ester having a hydrogen atom bonded to the α-position and a methacrylic acid ester having a methyl group bonded to the α-position.
“(Meth) acrylate” means one or both of an acrylate having a hydrogen atom bonded to the α-position and a methacrylate having a methyl group bonded to the α-position.

  ADVANTAGE OF THE INVENTION According to this invention, the pattern formation method useful for formation of a fine pattern can be provided.

It is a schematic process drawing explaining embodiment of the process (1) in the pattern formation method of this invention. It is a schematic process drawing explaining embodiment of the process (2) and process (3) in the pattern formation method of this invention. It is a schematic process drawing explaining embodiment of the process (4) in the pattern formation method of this invention.

≪Pattern formation method≫
In the pattern forming method of the present invention, a first chemically amplified positive resist composition is coated on a support to form a first resist film, the first resist film is exposed, and post-exposure baking is performed. Step (1) of forming a first resist pattern by alkali development, step (2) of cleaning the first resist pattern with an acidic lithography cleaning solution, and after the cleaning A step (3) of baking the first resist pattern, and a pattern reversal composition containing an organic solvent that does not dissolve the first resist film on the support on which the first resist pattern is formed. And a step (4) of forming a pattern reversal film by coating and removing the first resist pattern by alkali development to form a resist pattern.

The pattern forming method of the present invention will be described below with reference to the drawings. However, the present invention is not limited to this.
1 to 3 show an embodiment of the pattern forming method of the present invention.
In the present embodiment, step (1) is performed according to the procedure shown in FIG.
That is, first, as shown in FIG. 1A, a first resist film 2 is formed by applying a first chemically amplified positive resist composition on a support 1.
Next, as shown in FIG. 1B, the first resist film 2 is exposed through a photomask 3 on which a predetermined pattern is formed, and post-exposure baking (post-exposure baking (PEB)) is performed. . Thereby, the solubility with respect to the alkali developing solution of the exposed area | region (exposed part) among the 1st resist films 2 increases on the other hand, while the solubility with respect to the alkaline developing solution of the area | region (unexposed part) which is not exposed is increased. Does not change, or even if it changes, the amount of change is slight, so that there is a difference in dissolution rate (dissolution contrast) between the exposed portion and the unexposed portion in the alkaline developer. Therefore, when the development with an alkali developer is performed, the exposed portion of the first resist film 2 is removed, and the unexposed portion remains. As a result, as shown in FIG. A pattern (first resist pattern) constituted by a plurality of spaced apart resist patterns 2a is formed.

Next, step (2) and step (3) are performed according to the procedure shown in FIG.
The plurality of resist patterns 2a (FIG. 2 (a)) formed after the development in the step (1) are cleaned using an acidic lithography cleaning solution (step (2)).
The washing is an operation corresponding to a rinsing process with pure water or the like usually performed after development. That is, instead of using ordinary pure water or the like as the rinsing liquid, an acidic lithography cleaning liquid is used. Wash. As a result, the resist pattern 2a changes to a resist pattern 2s containing an acid component dissolved in the lithography cleaning liquid (FIG. 2B).
Next, the plurality of resist patterns 2s are baked (step (3)). As a result, the component constituting the resist pattern 2s reacts with the acid component, and the resist pattern 2b is increased in solubility in an alkaline developer (FIG. 2C). Then, the resist pattern 2b is removed by development with an alkaline developer in the next step (4).

Next, a process (4) is performed in the procedure shown in FIG.
In step (4), first, a pattern containing an organic solvent that does not dissolve the first resist film 2 on the support 1 (FIG. 3A) on which a pattern composed of a plurality of resist patterns 2b is formed. A reversal composition is applied to form a pattern reversal film 6 that fills the gaps between the plurality of resist patterns 2b, as shown in FIG. 3B.
Next, when developing with an alkaline developer, the resist pattern 2b is removed, while the pattern reversal film 6 filled between the resist patterns 2b remains without being removed. A portion of the pattern reversal film 6 existing on the upper surface of the resist pattern 2b is removed together with the resist pattern 2b during alkali development because the thickness thereof is thin. As a result, as shown in FIG. 3C, a resist pattern (reversal pattern) obtained by reversing the image of the resist pattern 2b is formed at the position 6c where the resist pattern 2b was present.

  Hereinafter, steps (1) to (4) in the present embodiment will be described in more detail.

[Step (1)]
The support is not particularly limited, and a conventionally known one can be used, and examples thereof include a substrate for electronic components and a substrate on which a predetermined wiring pattern is formed. More specifically, a silicon substrate, a metal substrate such as copper, chromium, iron, and aluminum, a glass substrate, and the like can be given. As a material for the wiring pattern, for example, copper, aluminum, nickel, gold or the like can be used.
Further, the support may be a substrate in which an inorganic and / or organic film is provided on the above-described substrate. An inorganic antireflection film (inorganic BARC) is an example of the inorganic film. Examples of the organic film include an organic antireflection film (organic BARC) and a lower layer film in a multilayer resist method. In particular, it is preferable to provide an organic film because a pattern with a high aspect ratio can be formed on the substrate, which is useful in manufacturing semiconductors.
Here, the multilayer resist method is a method in which at least one organic film (lower film) and at least one resist film are provided on a substrate, and the lower layer is patterned using the resist pattern formed on the upper resist film as a mask. It is said that a high aspect ratio pattern can be formed. In the multilayer resist method, basically, a method having a two-layer structure of an upper resist film and a lower film, and one or more intermediate layers (metal thin film, etc.) are provided between the resist film and the lower film. And a method of forming a multilayer structure of three or more layers. According to the multilayer resist method, by securing a required thickness with the lower layer film, the resist film can be thinned and a fine pattern with a high aspect ratio can be formed.
The inorganic film can be formed, for example, by applying an inorganic antireflective film composition such as a silicon-based material on a substrate and baking it.
The organic film is formed by, for example, applying an organic film forming material in which a resin component or the like constituting the film is dissolved in an organic solvent to a substrate with a spinner or the like, preferably 200 to 300 ° C., preferably 30 to 300 seconds, More preferably, it can be formed by baking under heating conditions of 60 to 180 seconds.

The first chemically amplified positive resist composition (hereinafter sometimes simply referred to as “first positive resist composition”) is not particularly limited, and is selected from known chemical amplified positive resist compositions. It can be appropriately selected and used.
Here, the “chemically amplified resist composition” contains an acid generator component that generates an acid upon exposure as an essential component, and an alkali of the entire chemically amplified resist composition by the action of the acid. It has the property of changing the solubility in a developer. For example, in the case of a positive type, the solubility in an alkali developer increases.
For example, as a chemically amplified positive resist composition, a compound in which a compound having an acid dissociable, dissolution inhibiting group (for example, component (A) described later) is blended with the acid generator component is generally used. Yes. When exposure and post-exposure baking are performed on such a composition, the acid dissociable, dissolution inhibiting group is dissociated from the compound by the action of the acid generated from the acid generator component.
This acid dissociable, dissolution inhibiting group has an alkali dissolution inhibiting property that makes the entire compound difficult to dissolve in an alkali developer before dissociation, and has a property of dissociating by the action of an acid generated from an acid generator component. When the acid dissociable, dissolution inhibiting group is dissociated, the solubility of the compound in an alkaline developer increases. Therefore, when selective exposure and post-exposure baking are performed on the resist film formed using the chemically amplified positive resist composition, the exposed portion of the resist film is affected by the action of the acid generated from the acid generator component. As a result, the solubility in an alkali developer increases while the solubility in an unexposed portion does not change in the alkali developer. Therefore, only the exposed portion is dissolved and removed by alkali development, and a resist pattern is formed.
Specific examples of the first chemically amplified positive resist composition will be described later in detail.

A method for forming the first resist film 2 by applying the first positive resist composition on the support 1 is not particularly limited, and can be formed by a conventionally known method.
Specifically, for example, the first positive resist composition is applied onto the support 1 by using a conventionally known method such as using a spinner, and is preferably subjected to a baking treatment at a temperature of 80 to 150 ° C. The first resist film 2 can be formed by performing pre-baking) for 40 to 120 seconds, more preferably 60 to 90 seconds, and volatilizing the organic solvent.
The thickness of the first resist film 2 is preferably 50 to 500 nm, more preferably 50 to 450 nm. By setting it within this range, there are effects that a resist pattern can be formed with high resolution and sufficient resistance to etching can be obtained.

Next, the first resist film 2 formed as described above is selectively exposed through a photomask 3, subjected to PEB treatment, and developed to form a first resist pattern.
The wavelength used for the exposure is not particularly limited, and includes KrF excimer laser, ArF excimer laser, F ₂ excimer laser, EUV (extreme ultraviolet), VUV (vacuum ultraviolet), EB (electron beam), X-ray, soft X-ray, etc. Can be done using radiation. One of ArF excimer laser, EUV, and EB is preferable, and an ArF excimer laser is particularly preferable because a fine resist pattern can be easily formed.
The photomask 3 is not particularly limited, and a known one can be used. For example, a binary mask (Binary-Mask) in which the transmittance of the light shielding portion is 0%, or a halftone type in which the transmittance of the light shielding portion is 6%. A phase shift mask (HT-Mask) can be used.
The binary mask is generally formed by forming a chromium film, a chromium oxide film or the like as a light shielding portion on a quartz glass substrate.
As the halftone phase shift mask, generally, a quartz glass substrate on which a MoSi (molybdenum silicide) film, a chromium film, a chromium oxide film, a silicon oxynitride film, or the like is formed as a light shielding portion is used. .
In the present embodiment, the exposure is performed through the photomask 3, but the present invention is not limited to this, and the selective exposure may be performed by exposure not through the photomask, for example, drawing by EB or the like. .

The exposure of the first resist film 2 may be performed by normal exposure (dry exposure) performed in an inert gas such as air or nitrogen, or may be performed by immersion exposure.
In immersion exposure, as described above, at the time of exposure, the portion between the lens, which is conventionally filled with an inert gas such as air or nitrogen, and the resist film on the support is larger than the refractive index of air. Exposure is performed in a state filled with a solvent having a refractive index (immersion medium).
More specifically, the immersion exposure is a solvent (immersion medium) having a refractive index larger than the refractive index of air between the resist film obtained as described above and the lowermost lens of the exposure apparatus. And in that state, exposure (immersion exposure) is performed through a desired photomask.
The immersion medium has a refractive index that is larger than the refractive index of air and smaller than the refractive index of the resist film (first resist film 2 in step (1)) exposed by the immersion exposure. A solvent is preferred. The refractive index of such a solvent is not particularly limited as long as it is within the above range.
Examples of the solvent having a refractive index larger than the refractive index of air and smaller than the refractive index of the resist film include water, a fluorine-based inert liquid, a silicon-based solvent, and a hydrocarbon-based solvent.
Specific examples of the fluorine-based inert liquid include a fluorine-based compound such as C ₃ HCl ₂ F ₅ , C ₄ F ₉ OCH ₃ , C ₄ F ₉ OC ₂ H ₅ , and C ₅ H ₃ F ₇ as a main component. Examples thereof include liquids, and those having a boiling point of 70 to 180 ° C are preferable, and those having a boiling point of 80 to 160 ° C are more preferable. It is preferable that the fluorine-based inert liquid has a boiling point in the above range since the medium used for immersion can be removed by a simple method after the exposure is completed.
As the fluorine-based inert liquid, a perfluoroalkyl compound in which all hydrogen atoms of the alkyl group are substituted with fluorine atoms is particularly preferable. Specific examples of the perfluoroalkyl compound include a perfluoroalkyl ether compound and a perfluoroalkylamine compound.
More specifically, examples of the perfluoroalkyl ether compound include perfluoro (2-butyl-tetrahydrofuran) (boiling point: 102 ° C.). Examples of the perfluoroalkylamine compound include perfluorotributylamine ( Boiling point of 174 ° C.).

In step (1), the exposure amount and the PEB temperature are set so that the solubility of the exposed portion of the first resist film 2 in the alkaline developer increases. That is, the amount of energy supplied to the exposed portion of the first resist film 2 by exposure and PEB increases the solubility of the exposed portion in the alkaline developer, while the solubility of the unexposed portion in the alkaline developer is Exposure and PEB are performed so that the amount of energy does not increase.
More specifically, the first resist film 2 made of a chemically amplified positive resist composition is subjected to exposure and PEB to generate an acid from the acid generator component, and the resist film of the generated acid. 2 and the increase in the solubility of the resist film in the alkaline developer by the action of the acid proceeds. At this time, if the exposure amount and the baking temperature (PEB temperature) of PEB are not sufficient, and the amount of energy supplied is not sufficient, the generation and diffusion of acid does not proceed sufficiently in the exposed portion, and alkali development in the exposed portion is performed. The solubility in the liquid does not increase sufficiently.
For this reason, the difference in dissolution rate (dissolution contrast) between the exposed portion and the unexposed portion in the alkaline developer is small, and a good resist pattern cannot be formed even when developed. That is, in order to form the first resist pattern, when the first resist film 2 is exposed, PEB, and developed, the exposed portion of the resist film 2 is dissolved and removed with an alkaline developer. It is necessary to perform exposure and PEB at an exposure amount and PEB temperature that exhibit sufficient alkali development solubility.
In order to increase the solubility of the first resist film 2 in the alkaline developer, both the exposure amount and the PEB temperature need to have values of a certain level or more. For example, if the exposure amount is too small, no increase in solubility in an alkaline developer is observed even when the PEB temperature is increased. Even if the exposure amount is large, if the PEB temperature is too low, an increase in solubility in an alkaline developer is not observed.
Hereinafter, the PEB temperature at which the resist film after exposure can exhibit sufficient alkali development solubility to be dissolved and removed with an alkaline developer may be referred to as an effective PEB temperature.

Among the above, the exposure amount may be a temperature at which the solubility of the first resist film 2 in the alkaline developer can be increased, and the optimum exposure amount (Eop ₁ ) of the first resist film 2 is usually used. It is done. Here, the “optimal exposure amount” means that when the resist film is selectively exposed, PEB is performed at a predetermined PEB temperature and developed, the resist pattern is faithfully reproduced according to the design pattern dimensions. The exposure amount.
The PEB temperature (T _peb1 ) in the step (1) is a temperature at which the solubility of the exposed portion of the first resist film 2 exposed at the exposure amount in the alkaline developer can be increased, that is, the first resist. What is necessary is _just the temperature more than the minimum value ( _Tmin1 ) of the effective PEB temperature of the film _| membrane 2. That is, T _min1 ≦ T _peb1 is sufficient.
T _peb1 varies depending on the composition of the first positive resist composition to be used, but is usually in the range of 70 to 150 ° C, preferably 80 to 140 ° C, and more preferably 85 to 135 ° C.
The baking time in the PEB treatment is usually 40 to 120 seconds, preferably 60 to 90 seconds.

Whether the exposure amount to be applied and the PEB temperature increase the solubility of the first resist film 2 in the alkaline developer can be determined by the following procedure.
The first resist film 2 is exposed by changing the exposure amount with an exposure light source (for example, ArF excimer laser, EB, EUV, etc.) used in step (1), and is exposed at a predetermined baking temperature for 30 to 120 seconds. The PEB process is performed, and development is performed using a 2.38 mass% tetramethylammonium hydroxide aqueous solution (23 ° C.) as a developer.
At this time, when the exposure amount is increased at a predetermined baking temperature and the exposure amount becomes a predetermined value or more, the dissolution rate of the exposed portion of the first resist film 2 in the alkaline developer is 1 nm / second or more. In this case, it is determined that the baking temperature is a baking temperature at which the solubility of the first resist film 2 in the alkaline developer increases (a temperature _{equal to} or higher than T _{min1 of} the first resist film 2). On the other hand, even when the exposure amount is increased, the dissolution rate of the exposed portion of the first resist film 2 in the developer does not become 1 nm / second or more, and when saturation is exhibited at a lower dissolution rate, It is determined that the baking temperature is a baking temperature at which the solubility of the first resist film 2 in the alkaline developer does not increase (a temperature _lower than T _{min1 of} the first resist film 2).
At this time, the exposure amount equal to or higher than the exposure amount at the time when the change in dissolution rate in the alkaline developer becomes 1 nm / second or more is the solubility of the first resist film 2 in the alkaline developer at the PEB temperature. It is determined that the exposure amount increases.

  After the PEB treatment, alkali development of the first resist film 2 is performed. Alkali development can be carried out by a known method using an aqueous alkali solution generally used as a developer, for example, an aqueous tetramethylammonium hydroxide (TMAH) solution having a concentration of 0.1 to 10% by mass. By such alkali development, the exposed portion of the first resist film 2 is removed to form a resist pattern 2a.

The first resist pattern can also be formed by repeating the operation of step (1) described above. The first resist pattern formed in this case is preferably a resist pattern formed by performing patterning using a chemically amplified positive resist composition twice or more. According to such a resist pattern forming method, the first resist pattern can be easily formed with finer dimensions.
Specifically, a chemically amplified positive resist composition is used to form a resist film, which is then exposed and alkali-developed to form a resist pattern. Then, another chemically amplified positive resist is formed in the space portion of the resist pattern. And a similar patterning operation by applying a mold resist composition.
At that time, the resist film formed by applying another chemically amplified positive resist composition is applied so that the thickness (thickness) of the resist pattern already formed is about the same. It is preferable. By doing in this way, the reverse pattern shape by the subsequent inversion composition tends to become favorable.
Moreover, it is preferable to mix | blend the organic solvent which does not melt | dissolve the resist pattern already formed in another chemical amplification type positive resist composition as much as possible. Examples of such an organic solvent include the same organic solvents that are used in the pattern reversal composition described below and do not dissolve the first resist film.

[Step (2)]
Next, the plurality of resist patterns 2a formed after the development in the step (1) are cleaned using an acidic lithography cleaning solution.
The cleaning liquid for lithography is an acidic solution, and its pH is preferably 4.5 or less, more preferably 4 or less, and further preferably 2 to 3.5.
The pH of the cleaning liquid for lithography shows a value measured by a commercially available pH / ORP meter at room temperature (25 ° C.).
Thus, by performing cleaning using an acidic cleaning solution, the plurality of resist patterns 2a are changed to resist patterns 2s containing an acid component dissolved in the cleaning solution. And the solubility with respect to an alkali developing solution increases by the effect | action of this acid component.

The lithography cleaning solution is not particularly limited as long as it is an acidic solution. In particular, it contains a surfactant because it can suppress pattern collapse and prevent redeposition of insoluble matter after alkali development to the resist film surface. A cleaning liquid is preferred.
However, the cleaning liquid for lithography in the present invention is not limited to a cleaning liquid containing a surfactant, and a cleaning liquid not containing a surfactant can also be used.

(solvent)
Suitable examples of the solvent for the lithography cleaning liquid include water and a mixed solvent of water and a water-miscible organic solvent.
As the water-miscible organic solvent, a monohydric alcohol or a polyhydric alcohol can be used.
Examples of the monohydric alcohol include methanol, ethanol, and propanol. Examples of the polyhydric alcohol include ethylene glycol, propylene glycol, diethylene glycol, glycerin, and alkyl etherified products or esterified products thereof.
As a content rate of a water-miscible organic solvent, 0.01-10 mass% is preferable in a mixed solvent, and 0.1-5 mass% is more preferable.
By using a mixed solvent of water and a water-miscible organic solvent as described above in the cleaning liquid for lithography, the cleaning liquid for lithography is efficiently applied to the surface of the first resist pattern when cleaning the first resist pattern. Can get wet well.
In the cleaning liquid for lithography, the content of the solvent is preferably 90 to 99.99% by mass, and more preferably 95 to 99.95% by mass.

(Surfactant)
In the pattern forming method of the present invention, when a lithography cleaning liquid containing a surfactant is used, examples of the surfactant include conventionally known anionic surfactants, cationic surfactants, amphoteric surfactants, and nonionic surfactants. Among them, an anionic surfactant having a hydrophilic part as an anionic group is preferable because the solubility of the first resist pattern in an alkaline developer is likely to increase.
Examples of the anionic group include a carboxylic acid group, a sulfonic acid group, and a phosphoric acid group, and a sulfonic acid group is preferable.
In the present invention, the “anionic surfactant” includes both a salt type subjected to neutralization treatment and an acid type before neutralization treatment. Either type is a component that dissociates into ions in the lithography cleaning liquid and acts on the first resist pattern by baking in step (3) described later to increase the alkali development solubility.
Specific examples of anionic surfactants include, for example, higher fatty acids having higher alkyl groups having 8 to 20 carbon atoms, higher alkyl sulfates, higher alkyl sulfonic acids, higher alkyl aryl sulfonic acids, and other surface activities having sulfonic acid groups. Agents, higher alcohol phosphates, or salts thereof.
The alkyl group having 8 to 20 carbon atoms may be linear or branched, a phenylene group or an oxygen atom may be present in the molecular chain, or hydrogen in the alkyl group. A part of the atoms may be substituted with a hydroxyl group or a carboxy group.

Specific examples of the higher fatty acid include dodecanoic acid, tetradecanoic acid, stearic acid and the like.
Specific examples of higher alkyl sulfates include decyl sulfate, dodecyl sulfate and the like.
Specific examples of the higher alkyl sulfonic acid include decane sulfonic acid, dodecane sulfonic acid, tetradecane sulfonic acid, pentadecane sulfonic acid, stearic acid sulfonic acid, and the like.
Specific examples of higher alkylaryl sulfonic acids include dodecylbenzene sulfonic acid and decylnaphthalene sulfonic acid.
Examples of other surfactants having a sulfonic acid group include alkyl diphenyl ether disulfonic acids such as dodecyl diphenyl ether disulfonic acid, and dialkyl sulfosuccinates such as dioctyl sulfosuccinate.
Specific examples of higher alcohol phosphates include palmityl phosphate, castor oil alkyl phosphate, coconut oil alkyl phosphate, and the like.

Among the above-mentioned anionic surfactants, surfactants having a sulfonic acid group are preferable. Specifically, alkylsulfonic acid, alkylbenzenesulfonic acid, olefinsulfonic acid, alkyldiphenyl ether disulfonic acid, alkylnaphthalenesulfonic acid, or these Salt of dialkylsulfosuccinate and the like.
Among these, alkylsulfonic acid, alkylbenzenesulfonic acid, alkyldiphenyl ether disulfonic acid, or a salt thereof; dialkylsulfosuccinate is more preferable.
9-21 are preferable and, as for the average carbon number of the alkyl group of alkylsulfonic acid, 12-18 are more preferable.
6-18 are preferable and, as for the average carbon number of the alkyl group of alkylbenzenesulfonic acid, 9-15 are more preferable.
6-18 are preferable and, as for the average carbon number of the alkyl group of alkyl diphenyl ether disulfonic acid, 9-15 are more preferable.
4-12 are preferable and, as for the average carbon number of the alkyl group of dialkyl sulfosuccinate, 6-10 are more preferable.
Among these, alkylsulfonic acid having an alkyl group having an average carbon number of 15 or a salt thereof, and alkylbenzenesulfonic acid having an alkyl group having an average carbon number of 12 or a salt thereof are particularly preferable.

  Examples of the salt include salts of alkali metals such as sodium and potassium; salts of alkaline earth metals such as calcium and magnesium; alkanolamine salts such as monoethanolamine, diethanolamine and triethanolamine; and ammonium salts.

In the cleaning liquid for lithography, one kind of surfactant may be used alone, or two or more kinds may be mixed and used.
In the cleaning liquid for lithography, the content (mass basis) of the surfactant is preferably 10 ppm or more and 1% by mass or less, and more preferably 500 to 5000 ppm. When the content of the surfactant is 10 ppm or more, more preferably 500 ppm or more, the solubility of the first resist pattern in the alkaline developer tends to increase. Further, the surface tension of the lithography cleaning liquid can be sufficiently reduced, and pattern collapse can be effectively suppressed. When the content of the surfactant is 1% by mass or less, the resist pattern is hardly dissolved in the lithography cleaning liquid, and the dimensional variation of the first resist pattern is further suppressed.

The lithography cleaning liquid may contain, for example, an amine compound or a pH adjusting component such as NH ₃ (ammonia water) in addition to the solvent and the surfactant described above.

(Amine compound)
By including an amine compound in the cleaning liquid for lithography, for example, when an anionic surfactant is used as the surfactant, a part of the anionic surfactant forms a salt to form a first resist film of the anionic surfactant. Excessive penetration into can be suppressed. As a result, the first resist pattern is hardly dissolved in the lithography cleaning liquid, and the dimensional variation is further suppressed.

  The amine compound is preferably an amine compound having water solubility, and examples thereof include alkanolamines, alkylalkanolamines; quaternary amine compounds having an alkylene group or alkyl group having 2 to 5 carbon atoms.

Examples of alkanolamines include monoethanolamine, diethanolamine, and triethanolamine.
Examples of the alkyl alkanolamine include ethyl monoethanolamine, butyl monoethanolamine, dimethylethanolamine, diethylethanolamine, ethyldiethanolamine, butyldiethanolamine, and dibutylethanolamine.

Examples of the quaternary amine compound include quaternary ammonium hydroxides and quaternary ammonium halides, with quaternary ammonium hydroxides being preferred.
Among such quaternary ammonium hydroxides, quaternary ammonium hydroxides having an alkyl group or an alkenyl group having 4 to 24 carbon atoms are preferable.
Here, as the alkyl group, a methyl group, an ethyl group, a linear or branched propyl group, a linear or branched butyl group, a linear or branched pentyl group, Or a linear or branched hexyl group is mentioned. Examples of the alkenyl group include an ethylene group, a linear or branched propylene group, a linear or branched butylene group, a linear or branched pentenyl group, or a linear Or a branched hexenyl group is mentioned.
Such quaternary ammonium hydroxides can be included in any combination of up to four of the above alkyl and alkenyl groups. Such quaternary ammonium hydroxides include tetramethylammonium hydroxide, tetraethylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide, tetrapropylammonium hydroxide, methyltripropylammonium hydroxide, tetrabutylammonium hydroxide. And tetrapentylammonium hydroxide and methyltributylammonium hydroxide.
Among these, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and tetrapentylammonium hydroxide are preferable, and tetramethylammonium chloride and tetraethylammonium hydroxide are particularly preferable.

  Among the above amine compounds, monoethanolamine, tetramethylammonium hydroxide, diethanolamine, and triethanolamine are preferable, and monoethanolamine and tetramethylammonium hydroxide are more preferable.

In the cleaning liquid for lithography, the amine compound may be used alone or in combination of two or more.
In the cleaning liquid for lithography, the content (mass basis) of the amine compound is preferably 10 ppm or more and 1% by mass or less, and more preferably 10 to 1000 ppm.

Further, when an anionic surfactant is used as the surfactant, the mixing ratio (mass ratio) of the anionic surfactant and the amine compound is preferably 30: 1 to 1: 2, and 10: 1 to More preferably, it is 1: 1.
When the content ratio is within the above range, the balance of the content of the anionic surfactant and the amine compound can be kept good, and a salt of a part of the anionic surfactant and the amine compound is easily formed. Thus, the dimensional variation of the first resist pattern is further suppressed. Further, when an acid type anionic surfactant is used, the pH of the lithography cleaning solution can be easily adjusted to an acidic region.
Among the salts formed with an anionic surfactant and an amine compound, alkanolamine salts of alkylsulfonic acids having an alkyl group having an average carbon number of 9 to 21 (preferably monoethanolamine salts and diethanolamine salts) are preferable. ), Tetramethylammonium salt, or tetraethylammonium salt;
Examples thereof include alkanolamine salts (preferably monoethanolamine salts and diethanolamine salts), tetramethylammonium salts, and tetraethylammonium salts of alkylbenzenesulfonic acids having an alkyl group having an average carbon number of 6 to 18.
Especially, the alkanolamine salt of the alkylsulfonic acid which has a C9-C21 alkyl group is more preferable. Most preferred is a salt of an alkylsulfonic acid having an alkyl group with an average carbon number of 15 and monoethanolamine.

In the step (2), the time (cleaning time) for bringing the first resist pattern into contact with the lithography cleaning liquid can be appropriately set according to the type and application of the first chemical amplification type positive resist composition. Preferably 5 to 90 seconds, more preferably 5 to 30 seconds.
Further, as a method for bringing the lithography cleaning solution into contact with the first resist pattern, for example, a lithography cleaning solution is applied to the resist pattern surface, sprayed (coated) from a nozzle or the like, or the resist pattern is applied to the lithography cleaning solution. And a method of immersing the film in water.
In addition, in the pattern formation method of this invention, after the image development of a process (1), you may have the process of performing the rinse with a pure water if desired before a process (2).

[Step (3)]
Next, the plurality of resist patterns 2s after being cleaned in the step (2) are baked.
Such baking is performed by setting the baking temperature so that the resist pattern 2b after baking is removed by the alkali development in the step (4).
When the cleaning in the step (2) and the baking in the step (3) are performed, the acid component is adsorbed and remains on the first resist pattern, and the acid component reacts with the component constituting the first resist pattern. And
The solubility of the first resist pattern in an alkaline developer increases. Therefore, the resist pattern 2b is removed when alkali development is performed in the subsequent step (4).

The bake temperature varies depending on the composition of the pattern reversal composition to be used, but is preferably 100 ° C. or higher, more preferably 110 ° C. or higher, and further preferably 120 to 160 ° C. When the baking temperature is 100 ° C. or higher, the solubility of the first resist pattern in the alkaline developer tends to increase. For example, deprotection tends to occur in the acid dissociable, dissolution inhibiting group in the first positive resist composition.
The baking time is preferably 40 to 120 seconds, more preferably 60 to 90 seconds.

[Step (4)]
Next, a pattern reversal composition containing an organic solvent (hereinafter referred to as (S ′) component) that does not dissolve the first resist film 2 is applied onto the support 1 on which the first resist pattern is formed. Then, a pattern reversal film 6 that fills the gaps between the resist patterns 2b is formed.
When the pattern reversal composition contains the component (S ′), dissolution of the resist pattern 2b by the organic solvent in the pattern reversal composition when the pattern reversal composition is applied can be suppressed, and the resist pattern 2b It is possible to prevent the deterioration and disappearance of the shape, the mixing at the interface between the resist pattern 2b and the pattern reversal film 6 and the like.

Here, “does not dissolve the first resist film” in the component (S ′) means that the first positive resist composition is applied on a support and dried, and the film thickness is 0 at 23 ° C. When a resist film having a thickness of 2 μm is formed and immersed in the organic solvent, the resist film disappears or the film thickness does not change significantly even after 60 minutes (preferably the film of the resist film The thickness does not become 0.16 μm or less.)
As the component (S ′), any component that does not dissolve the first resist film and can dissolve the components blended in the pattern reversal composition may be used. Especially, it is preferable that it is at least 1 type selected from the group which consists of an alcohol type organic solvent, a fluorine type organic solvent, and an ether type organic solvent which does not have a hydroxyl group. Among these, alcohol-based organic solvents are preferable from the viewpoint of applicability and solubility of materials such as resin components.
Here, the “alcohol-based organic solvent” is a compound in which at least one of the hydrogen atoms of the aliphatic hydrocarbon is substituted with a hydroxyl group, and is a compound that is liquid at normal temperature and normal pressure. The structure of the main chain constituting the aliphatic hydrocarbon may be a chain structure, may be a cyclic structure, may have a cyclic structure in the chain structure, The chain structure may contain an ether bond.
The “fluorine-based organic solvent” is a compound containing a fluorine atom and is a liquid at normal temperature and normal pressure.
The “ether-based organic solvent having no hydroxyl group” is a compound that has an ether bond (C—O—C) in its structure, does not have a hydroxyl group, and is liquid at normal temperature and pressure. The ether organic solvent having no hydroxyl group preferably further has no carbonyl group in addition to the hydroxyl group.

As the alcohol organic solvent, monohydric alcohols, dihydric alcohols, derivatives of dihydric alcohols, and the like are preferable.
As the monohydric alcohol, although depending on the number of carbon atoms, a primary or secondary monohydric alcohol is preferable, and a primary monohydric alcohol is most preferable.
Here, the monohydric alcohol means a compound in which one of the hydrogen atoms of a hydrocarbon compound composed only of carbon and hydrogen is substituted with a hydroxyl group, and does not include a dihydric or higher polyhydric alcohol derivative. The hydrocarbon compound may have a chain structure or a cyclic structure.
The dihydric alcohol means a compound in which two hydrogen atoms of the hydrocarbon compound are substituted with a hydroxyl group, and does not include a trihydric or higher polyhydric alcohol derivative.
Examples of the dihydric alcohol derivative include compounds in which one of the hydroxyl groups of the dihydric alcohol is substituted with a substituent (such as an alkoxy group or an alkoxyalkyloxy group).

The boiling point (under normal pressure) of the alcohol-based organic solvent is preferably 80 to 160 ° C., more preferably 90 to 150 ° C., and 100 to 135 ° C. for coating properties and stable composition during storage. And the most preferable from the viewpoint of the heating temperature in the PAB process and PEB process.
Specific examples of the alcohol-based organic solvent include propylene glycol (PG); 1-butoxy-2-propanol (PGB), n-hexanol, 2-heptanol, 3-heptanol, and 1-heptanol as those having a chain structure. 5-methyl-1-hexanol, 6-methyl-2-heptanol, 1-octanol, 2-octanol, 3-octanol, 4-octanol, 2-ethyl-1-hexanol, 2- (2-butoxyethoxy) ethanol N-pentyl alcohol, s-pentyl alcohol, t-pentyl alcohol, isopentyl alcohol, isobutanol (also referred to as isobutyl alcohol or 2-methyl-1-propanol), isopropyl alcohol, 2-ethylbutanol, neopentyl alcohol, n- Ethanol, s- butanol, t-butanol, 1-propanol, 2-methyl-1-butanol, 2-methyl-2-butanol, 4-methyl-2-pentanol (methyl isobutyl carbinol), and the like.
In addition, as those having a cyclic structure, cyclopentanemethanol, 1-cyclopentylethanol, cyclohexanol, cyclohexanemethanol (CM), cyclohexaneethanol, 1,2,3,6-tetrahydrobenzyl alcohol, exo-norbornol, 2-methyl Examples include cyclohexanol, cycloheptanol, 3,5-dimethylcyclohexanol, and benzyl alcohol.

  Among alcohol-based organic solvents, chain-structured monohydric alcohols or dihydric alcohol derivatives are preferred, such as 1-butoxy-2-propanol (PGB); isobutanol (2-methyl-1-propanol), 4-methyl. 2-Pentanol (methyl isobutyl carbinol) and n-butanol are preferred, and isobutanol (2-methyl-1-propanol) and 1-butoxy-2-propanol (PGB) are most preferred.

  Examples of the fluorine-based organic solvent include perfluoro-2-butyltetrahydrofuran.

Preferred examples of the ether organic solvent having no hydroxyl group include compounds represented by the following general formula (s-1).
R ⁴⁰ —O—R ⁴¹ (s-1)
[Wherein, R ⁴⁰ and R ⁴¹ each independently represent a monovalent hydrocarbon group, and R ⁴⁰ and R ⁴¹ may combine to form a ring. -O- represents an ether bond. ]

In the above formula, examples of the hydrocarbon group for R ⁴⁰ and R ⁴¹ include an alkyl group and an aryl group, and an alkyl group is preferred. Among ^them, it is preferable that any of R ^{40, R 41} is an alkyl ^group, and ^{R 40} and ^{R 41} is more preferably the same alkyl group.
As each of the alkyl groups of R ^40, R ^41, not particularly limited, for example, straight, branched or cyclic alkyl group, and the like. In the alkyl group, part or all of the hydrogen atoms may or may not be substituted with a halogen atom or the like.
The alkyl group preferably has 1 to 15 carbon atoms, more preferably 1 to 10 carbon atoms, because the coating properties of the resist composition are good. Specific examples include an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an n-pentyl group, an isopentyl group, a cyclopentyl group, and a hexyl group, and an n-butyl group and an isopentyl group are particularly preferable. .
The halogen atom that may be substituted for the hydrogen atom of the alkyl group is preferably a fluorine atom.
Each aryl group for R ⁴⁰ and R ⁴¹ is not particularly limited, and is, for example, an aryl group having 6 to 12 carbon atoms, in which part or all of the hydrogen atoms are alkyl groups, alkoxy groups, It may or may not be substituted with a halogen atom or the like.
The aryl group is preferably an aryl group having 6 to 10 carbon atoms because it can be synthesized at a low cost. Specifically, a phenyl group, a benzyl group, a naphthyl group, etc. are mentioned, for example.
The alkyl group that may be substituted for the hydrogen atom of the aryl group is preferably an alkyl group having 1 to 5 carbon atoms, and is a methyl group, an ethyl group, a propyl group, an n-butyl group, or a tert-butyl group. Is more preferable.
As the alkoxy group which may substitute the hydrogen atom of the said aryl group, a C1-C5 alkoxy group is preferable and a methoxy group and an ethoxy group are more preferable.
The halogen atom that may be substituted for the hydrogen atom of the aryl group is preferably a fluorine atom.
In the above formula, R ⁴⁰ and R ⁴¹ may combine to form a ring.
R ⁴⁰ and R ⁴¹ are each independently a linear or branched alkylene group (preferably an alkylene group having 1 to 10 carbon atoms), and the end of R ⁴⁰ is bonded to the end of R ^41. To form a ring. In addition, the carbon atom of the alkylene group may be substituted with an oxygen atom.
Specific examples of the ether organic solvent include 1,8-cineol, tetrahydrofuran, dioxane and the like.

The boiling point (under normal pressure) of the ether-based organic solvent having no hydroxyl group is preferably 30 to 300 ° C, more preferably 100 to 200 ° C, and further preferably 140 to 180 ° C. By being above the lower limit of the temperature range, the component (S ′) is less likely to evaporate during spin coating during application of the resist composition, so that application unevenness is suppressed and application properties are improved. On the other hand, by being below the upper limit, the (S ′) component is sufficiently removed from the resist film by pre-baking, and the formability of the pattern inversion film is improved. Moreover, when the temperature is within this range, the effect of reducing the film thickness of the resist pattern and the stability of the composition during storage are further improved. Moreover, it is preferable also from a viewpoint of the heating temperature of a PAB process or a PEB process.
Specific examples of ether organic solvents having no hydroxyl group include, for example, 1,8-cineol (boiling point 176 ° C.), dibutyl ether (boiling point 142 ° C.), diisopentyl ether (boiling point 171 ° C.), dioxane (boiling point 101 ° C.). ), Anisole (boiling point 155 ° C.), ethyl benzyl ether (boiling point 189 ° C.), diphenyl ether (boiling point 259 ° C.), dibenzyl ether (boiling point 297 ° C.), phenetole (boiling point 170 ° C.), butyl phenyl ether, tetrahydrofuran (boiling point 66 ° C.) ), Ethyl propyl ether (boiling point 63 ° C.), diisopropyl ether (boiling point 69 ° C.), dihexyl ether (boiling point 226 ° C.), dipropyl ether (boiling point 91 ° C.) and the like.
The ether-based organic solvent having no hydroxyl group is preferably a cyclic or chain-shaped ether-based organic solvent because it has a good effect of reducing the film loss of the resist pattern. Among them, 1,8-cineole, dibutyl ether is preferable. And at least one selected from the group consisting of diisopentyl ether is preferred.

The (S ′) component used in the pattern reversal composition may be a single type or two or more types.
The pattern reversal composition may contain an organic solvent other than the (S ′) component (hereinafter referred to as the (S ″) component) as long as the effect of using the (S ′) component is not impaired. Good.
As the component (S ″), those capable of dissolving the components blended in the pattern reversal composition are preferable. Specifically, the component (S) described in the description of the first positive resist composition described later The same thing is mentioned.
The compounding amount of the component (S ″) is preferably 0 to 20% by mass and more preferably 1 to 15% by mass in the total organic solvent used in the pattern reversal composition.
The amount of the total organic solvent used in the pattern reversal composition is not particularly limited, and is usually an amount that makes the pattern reversal composition a liquid having a concentration that can be applied onto the support.

  In the step (4), the pattern reversal film 6 formed using the pattern reversal composition preferably has a lower alkali development solubility than the first resist pattern after the step (3). Since the alkali development solubility is lower than that of the first resist pattern, the first resist pattern is more easily dissolved in the alkaline developer than the pattern reversal film 6. Therefore, the first resist pattern becomes easy to be removed by alkali development, and a reverse pattern can be formed satisfactorily.

  A specific example of the composition of the pattern reversal composition will be described later in detail, but may be appropriately set according to the composition of the first positive resist composition.

Similar to the first resist film 2, the pattern reversal film 6 can be formed by a conventionally known method.
In the present invention, the film thickness of the pattern inversion film 6 (the minimum value of the film thickness of the portion filling the gap between the resist patterns 2b) is equal to or less than the height of the resist pattern 2b. preferable. In this case, the thickness of the pattern reversal film 6 covering the upper surface of the resist pattern 2b is thin enough to be easily removed during alkali development in the step (4). That is, the pattern inversion film 6 (film formed on the resist pattern 2b) in this portion has a small film thickness, so that film loss due to alkali development is likely to occur. Therefore, it is dissolved and removed together with the resist pattern 2b during development. Therefore, the reverse pattern can be formed satisfactorily.
On the other hand, if the pattern reversal film 6 is too thick, the pattern reversal film 6 on the upper surface of the resist pattern 2b cannot be removed well during alkali development in step (4), and a good reversal pattern may not be formed. .

The pattern reversal film 6 has an amount of film loss by alkali development of preferably 60 nm or less, more preferably 50 nm or less, and further preferably 30 to 50 nm.
If the film reduction amount is less than or equal to the upper limit value, the resist pattern 2b is dissolved during development, and a reversal pattern with good resolution is easily formed.
The amount of film loss due to alkali development can be measured as follows.
That is, a pattern reversal composition is uniformly applied on an 8-inch silicon substrate using a spinner, and baked on a hot plate at 100 ° C. for 60 seconds to form a pattern reversal film. Form. This pattern reversal film is immersed in a 2.38 mass% tetramethylammonium hydroxide aqueous solution at 23 ° C. for 60 seconds, and the difference in film thickness (film reduction amount) before and after the immersion is determined.

After the pattern reversal film 6 is formed, alkali development is performed. As a result, the resist pattern 2b is removed, while the pattern reversal film 6 filled between the resist patterns 2b remains without being removed. Of the pattern reversal film 6, the portion existing on the upper surface of the resist pattern 2 b is thin and is removed together with the resist pattern 2 b during alkali development. As a result, as shown in FIG. 3C, a pattern (reversal pattern) in which the image of the resist pattern 2b is reversed is formed at the position 6c where the resist pattern 2b was present.
For example, when the first resist pattern is a line pattern, a space pattern having the same dimension (space width) as the line pattern dimension (line width) is formed as an inverted pattern at the same position as the line pattern. When the first resist pattern is a dot pattern, a hole pattern having the same dimension (hole diameter) as that of the dot pattern (hole diameter) is formed as an inverted pattern at the same position as the dot pattern.

The alkali development can be carried out by a known method using an aqueous alkali solution, for example, an aqueous tetramethylammonium hydroxide (TMAH) solution having a concentration of 0.1 to 10% by mass.
After the alkali development, a rinse treatment with pure water or the like may be performed.
Further, after the alkali development, a baking process (post-bake) may be further performed. Post baking is usually performed under conditions of about 100 ° C. (because it is performed for the purpose of removing water after alkali development and rinsing), and the processing time is preferably 30 to 90 seconds.

In the present embodiment, a space pattern and / or a hole pattern can be obtained as an inverted pattern by forming a line pattern and / or a dot pattern as the first resist pattern.
Thus, the space pattern and hole pattern formed as a reversal pattern have a resolution, a shape, a lithography margin (for example, a margin with respect to an exposure amount (EL margin), a focal point, and the like, compared with a case where the space pattern and hole pattern are directly formed in one lithography process. It is excellent in pattern forming ability such as a margin with respect to depth (DOF margin), verticality of pattern shape, and the like. That is, when directly forming a space pattern or a hole pattern that requires removal of a very small part or a fine region of the resist film, as described above, it is forced to form a pattern under weak light incident intensity, and the pattern forming ability However, the pattern forming ability when forming the reverse pattern depends on the pattern forming ability when forming the first resist pattern (isolated line pattern, dot pattern, line and space pattern, etc.). Compared with the case of directly forming a space pattern or a hole pattern, the pattern forming ability is less limited, and a good resist pattern can be formed.

In the pattern forming method of the present embodiment, the first resist pattern can be removed by alkali development in step (4) in steps (2) and (3). Therefore, in the step (4), compared with the second patterning of the double patterning process, it is not necessary to perform exposure or baking, and a reverse pattern can be formed only by alkali development. The washing in step (2) is an operation corresponding to a rinse treatment with pure water or the like usually performed after alkali development. Therefore, such a pattern forming method has a smaller number of steps than the conventional double patterning process and is a simple method, and the throughput is improved.
Further, in such a pattern forming method, there is no restriction such as having to use a specific resist composition such as having the above-mentioned crosslink forming ability, the first chemically amplified positive resist composition and pattern inversion Any of the compositions for use can use the resist composition and the resin composition proposed so far as they are.

  In the present invention, when a positive resist composition is used as the pattern reversal composition, the pattern reversal film 6 may be patterned after the step (4). That is, the pattern reversal film 6 on which the reversal pattern is formed as described above may be selectively exposed and developed to form a resist pattern. Thereby, a denser pattern with a narrower pitch or a pattern with a complicated shape can be formed.

In the present invention, after the step (4), the support 1 may be etched using the formed pattern as a mask. A semiconductor device or the like can be manufactured by etching the support 1.
A known method can be used as the etching method. For example, the etching of the organic film (resist pattern, organic antireflection film, etc.) is preferably dry etching. In particular, oxygen plasma etching or etching using CF ₄ gas or CHF ₃ gas is preferable, and oxygen plasma etching is particularly preferable. Etching of the substrate and the inorganic antireflection film is preferably performed using a halogen gas, more preferably using a fluorocarbon-based gas, and particularly preferably using a CF ₄ gas or a CHF ₃ gas.

<First positive resist composition>
The chemically amplified positive resist composition used as the first positive resist composition in the pattern forming method of the present invention is not particularly limited, and is selected from among many chemically amplified resist compositions that have been proposed so far. It can be appropriately selected and used.
Examples of the chemically amplified positive resist composition include a base material component (A) having an acid dissociable, dissolution inhibiting group (hereinafter referred to as “component (A)”) and an acid generator component that generates acid upon exposure ( What contains B) (henceforth (B) component) is common.
In such a positive resist composition, when an acid is generated from the component (B) by exposure, the acid dissociable, dissolution inhibiting group of the component (A) is dissociated by the action of the acid, and Solubility increases. Therefore, in the formation of the resist pattern, when the resist film formed using the positive resist composition is selectively exposed, the exposed portion turns soluble in an alkali developer, while the unexposed portion is Since it remains hardly soluble in the alkali developer, the exposed portion is removed by alkali development, and a resist pattern is formed.

[(A) component]
The “base material component” is an organic compound having a film forming ability. As the substrate component, an organic compound having a molecular weight of 500 or more is preferably used. When the molecular weight of the organic compound is 500 or more, the film-forming ability is improved and a nano-level resist pattern is easily formed.
“Organic compounds having a molecular weight of 500 or more” used as the base component are roughly classified into non-polymers and polymers.
As the non-polymer, those having a molecular weight of 500 or more and less than 4000 are usually used. Hereinafter, a non-polymer having a molecular weight of 500 or more and less than 4000 is referred to as a “low molecular compound”.
As the polymer, those having a molecular weight of 1000 or more are usually used. Hereinafter, a polymer having a molecular weight of 1000 or more may be referred to as “resin”.
In the case of a polymer, the “molecular weight” is a polystyrene-reduced mass average molecular weight measured by GPC (gel permeation chromatography).
The component (A) may be a resin component (A1) (hereinafter also referred to as (A1) component) whose solubility in an alkali developer is increased by the action of an acid. It may be a low molecular compound component (A2) (hereinafter, also referred to as (A2) component) that increases the solubility in, or a mixture thereof.
In the present invention, the component (A) preferably contains the component (A1).
Hereinafter, preferred embodiments of the component (A1) and the component (A2) will be described more specifically.

[(A1) component]
Component (A1) is proposed as a base resin for conventional chemically amplified KrF positive resist compositions, ArF positive resist compositions, EB positive resist compositions, EUV positive resist compositions, etc. Among these, it can be appropriately selected depending on the type of exposure light source used when forming the resist pattern.
Specific examples of the base resin include those obtained by protecting the hydrophilic group of a resin having a hydrophilic group (hydroxyl group, carboxy group, etc.) with an acid dissociable, dissolution inhibiting group.
Examples of the resin having a hydrophilic group include a novolak resin, a resin having a structural unit derived from hydroxystyrene (PHS resin) such as polyhydroxystyrene (PHS) and a hydroxystyrene-styrene copolymer, and an acrylic ester. An acrylic resin having a structural unit derived from Any of these may be used alone or in combination of two or more.

In the present specification and claims, the “structural unit derived from hydroxystyrene” is a structural unit formed by cleavage of an ethylenic double bond of hydroxystyrene.
“Hydroxystyrene” refers to hydroxystyrene in which a hydrogen atom is bonded to the α-position carbon atom (carbon atom to which the phenyl group is bonded), and a substituent (an atom or group other than a hydrogen atom) to the α-position carbon atom. ) And the derivatives thereof. Specifically, at least a benzene ring and a hydroxyl group bonded to the benzene ring are maintained. For example, a hydrogen atom bonded to the α-position of hydroxystyrene is an alkyl group having 1 to 5 carbon atoms, 5 substituted with a substituent such as a halogenated alkyl group of 5 or a hydroxyalkyl group, a benzene ring to which a hydroxyl group of hydroxystyrene is bonded, and an alkyl group having 1 to 5 carbon atoms, And a benzene ring to which 1 to 2 hydroxyl groups are further bonded (in this case, the total number of hydroxyl groups is 2 to 3).
“A structural unit derived from an acrylate ester” means a structural unit formed by cleavage of an ethylenic double bond of an acrylate ester.
“Acrylic acid esters” are not only acrylic acid esters in which a hydrogen atom is bonded to the carbon atom at the α-position (carbon atom to which the carbonyl group of acrylic acid is bonded), but also substituents (other than hydrogen atoms) on the carbon atom in the α-position. In which the atoms or groups are bonded. Examples of the substituent bonded to the α-position carbon atom include an alkyl group having 1 to 5 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, and a hydroxyalkyl group. The α-position carbon atom of the acrylate ester is a carbon atom to which a carbonyl group of acrylic acid is bonded unless otherwise specified.
In the hydroxystyrene or acrylate ester, the alkyl group as a substituent at the α-position is preferably a linear or branched alkyl group, specifically, a methyl group, an ethyl group, a propyl group, an isopropyl group, n -Butyl group, isobutyl group, tert-butyl group, pentyl group, isopentyl group, neopentyl group and the like can be mentioned.
Specific examples of the halogenated alkyl group as the substituent at the α-position include groups in which part or all of the hydrogen atoms of the above-mentioned “alkyl group as the substituent at the α-position” are substituted with a halogen atom. It is done. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is particularly preferable.
Specific examples of the hydroxyalkyl group as a substituent at the α-position include a group in which part or all of the hydrogen atoms of the “alkyl group as the substituent at the α-position” are substituted with a hydroxyl group. 1-5 are preferable and, as for the number of the hydroxyl groups in this hydroxyalkyl group, 1 is the most preferable.
In the present invention, the hydrogen atom, the alkyl group having 1 to 5 carbon atoms or the halogenated alkyl group having 1 to 5 carbon atoms is preferably bonded to the α-position of hydroxystyrene or acrylate ester. An alkyl group having 1 to 5 carbon atoms or a fluorinated alkyl group having 1 to 5 carbon atoms is more preferable, and a hydrogen atom or a methyl group is most preferable in terms of industrial availability.

In the present invention, the component (A1) in the first positive resist composition preferably has a structural unit derived from an acrylate ester.
The component (A1) particularly preferably has a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
In addition to the structural unit (a1), the component (A1) preferably further has a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group.
Further, the component (A1) is derived from an acrylate ester containing a —SO ₂ — containing cyclic group, in addition to the structural unit (a1) or in addition to the structural units (a1) and (a2). It preferably has a structural unit (a0).
In addition to the structural unit (a1), the component (A1) is added to the structural units (a1) and (a2), or in addition to the structural units (a1), (a2), and (a0), It is preferable to have a structural unit (a3) derived from an acrylate ester containing a containing aliphatic hydrocarbon group.

-Structural unit (a1):
The structural unit (a1) is a structural unit derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
The acid dissociable, dissolution inhibiting group in the structural unit (a1) has an alkali dissolution inhibiting property that makes the entire component (A1) hardly soluble in an alkali developer before dissociation, and is generated from the component (B) by exposure. It is dissociated by the action of an acid to increase the solubility of the entire component (A1) in an alkaline developer.
As the acid dissociable, dissolution inhibiting group in the structural unit (a1), those proposed so far as the acid dissociable, dissolution inhibiting group of the base resin for chemically amplified resist can be used. In general, a group that forms a cyclic or chain tertiary alkyl ester with a carboxy group in (meth) acrylic acid or the like; an acetal-type acid dissociable, dissolution inhibiting group such as an alkoxyalkyl group is widely known. .
The “tertiary alkyl ester” is an ester formed by replacing a hydrogen atom of a carboxy group with a chain or cyclic alkyl group, and the carbonyloxy group (—C (═O) —O The structure in which the tertiary carbon atom of the chain or cyclic alkyl group is bonded to the oxygen atom at the terminal of-). In this tertiary alkyl ester, when an acid acts, a bond is cut between an oxygen atom and a tertiary carbon atom.
The chain or cyclic alkyl group may have a substituent.
Hereinafter, a group that is acid dissociable by constituting a carboxy group and a tertiary alkyl ester is referred to as a “tertiary alkyl ester type acid dissociable, dissolution inhibiting group” for convenience.

Examples of the tertiary alkyl ester type acid dissociable, dissolution inhibiting group include an aliphatic branched acid dissociable, dissolution inhibiting group and an acid dissociable, dissolution inhibiting group containing an aliphatic cyclic group.
Here, “aliphatic branched” means having a branched structure having no aromaticity. The structure of the “aliphatic branched acid dissociable, dissolution inhibiting group” is not limited to a group consisting of carbon and hydrogen (hydrocarbon group), but is preferably a hydrocarbon group. Further, the “hydrocarbon group” may be either saturated or unsaturated, but is usually preferably saturated.
Examples of the aliphatic branched acid dissociable, dissolution inhibiting group include a group represented by -C (R ⁷¹ ) (R ⁷² ) (R ⁷³ ). ^Wherein, R 71 ^{to R 73} each independently represents a linear alkyl group of 1 to 5 carbon atoms. The group represented by —C (R ⁷¹ ) (R ⁷² ) (R ⁷³ ) preferably has 4 to 8 carbon atoms, specifically, a tert-butyl group or a 2-methyl-2-butyl group. , 2-methyl-2-pentyl group, 3-methyl-3-pentyl group and the like. A tert-butyl group is particularly preferable.

The “aliphatic cyclic group” means a monocyclic group or a polycyclic group having no aromaticity.
The aliphatic cyclic group in the “acid dissociable, dissolution inhibiting group containing an aliphatic cyclic group” may or may not have a substituent. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, an oxygen atom (= O), and the like. Is mentioned.
The basic ring structure excluding the substituent of the aliphatic cyclic group is not limited to a group consisting of carbon and hydrogen (hydrocarbon group), but is preferably a hydrocarbon group. The hydrocarbon group may be either saturated or unsaturated, but is usually preferably saturated.
The aliphatic cyclic group is preferably a polycyclic group.
Examples of the aliphatic cyclic group include one or more monocycloalkanes which may or may not be substituted with an alkyl group having 1 to 5 carbon atoms, a fluorine atom or a fluorinated alkyl group. Examples thereof include a group in which one or more hydrogen atoms have been removed from a polycycloalkane such as a bicycloalkane, tricycloalkane, tetracycloalkane, or the like. More specifically, a group obtained by removing one or more hydrogen atoms from a monocycloalkane such as cyclopentane or cyclohexane or one or more polycycloalkanes such as adamantane, norbornane, isobornane, tricyclodecane or tetracyclododecane. And a group in which a hydrogen atom is removed. Further, a part of the carbon atoms constituting the ring of a group obtained by removing one or more hydrogen atoms from these monocycloalkanes or a group obtained by removing one or more hydrogen atoms from polycycloalkanes are etheric oxygen atoms (- O-) may be substituted.
Examples of the acid dissociable, dissolution inhibiting group containing an aliphatic cyclic group include:
(I) Substitution with a carbon atom bonded to an atom adjacent to the acid dissociable, dissolution inhibiting group (for example, —O— in —C (═O) —O—) on the ring skeleton of a monovalent aliphatic cyclic group A group in which a group (atom or group other than a hydrogen atom) is bonded to form a tertiary carbon atom;
(Ii) a group having a monovalent aliphatic cyclic group and a branched alkylene having a tertiary carbon atom bonded to the monovalent aliphatic cyclic group.
In the group (i), examples of the substituent bonded to the carbon atom bonded to the atom adjacent to the acid dissociable, dissolution inhibiting group on the ring skeleton of the aliphatic cyclic group include an alkyl group. Examples of the alkyl group include those similar to R ¹⁴ in formulas (1-1) to (1-9) described later.
Specific examples of the group (i) include groups represented by the following general formulas (1-1) to (1-9).
Specific examples of the group (ii) include groups represented by the following general formulas (2-1) to (2-6).

［式中、Ｒ^１４はアルキル基であり、ｇは０〜８の整数である。］

[Wherein, R ¹⁴ represents an alkyl group, and g represents an integer of 0 to 8. ]

［式中、Ｒ^１５およびＲ^１６は、それぞれ独立してアルキル基である。］

[Wherein, R ¹⁵ and R ¹⁶ each independently represents an alkyl group. ]

The alkyl group for R ¹⁴ is preferably a linear or branched alkyl group.
The linear alkyl group preferably has 1 to 5 carbon atoms, more preferably 1 to 4, and still more preferably 1 or 2. Specific examples include a methyl group, an ethyl group, an n-propyl group, an n-butyl group, and an n-pentyl group. Among these, a methyl group, an ethyl group, or an n-butyl group is preferable, and a methyl group or an ethyl group is more preferable.
The branched alkyl group preferably has 3 to 10 carbon atoms, and more preferably 3 to 5 carbon atoms. Specific examples include isopropyl group, isobutyl group, tert-butyl group, isopentyl group, neopentyl group and the like, and isopropyl group is most preferable.
g is preferably an integer of 0 to 3, more preferably an integer of 1 to 3, and still more preferably 1 or 2.
Examples of the alkyl group for R ^{15 to} R ¹⁶ include the same alkyl groups as those for R ¹⁴ .
In the formulas (1-1) to (1-9) and (2-1) to (2-6), a part of the carbon atoms constituting the ring is substituted with an etheric oxygen atom (—O—). May be.
In formulas (1-1) to (1-9) and (2-1) to (2-6), a hydrogen atom bonded to a carbon atom constituting the ring may be substituted with a substituent. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, a fluorine atom, and a fluorinated alkyl group.

The “acetal-type acid dissociable, dissolution inhibiting group” is generally bonded to an oxygen atom by substituting a hydrogen atom at the terminal of an alkali-soluble group such as a carboxy group or a hydroxyl group. When an acid is generated by exposure, the acid acts to break the bond between the acetal acid dissociable, dissolution inhibiting group and the oxygen atom to which the acetal acid dissociable, dissolution inhibiting group is bonded.
Examples of the acetal type acid dissociable, dissolution inhibiting group include a group represented by the following general formula (p1).

［式中、Ｒ^１’，Ｒ^２’はそれぞれ独立して水素原子または炭素数１〜５のアルキル基を表し、ｎは０〜３の整数を表し、Ｙは炭素数１〜５のアルキル基または脂肪族環式基を表す。］

[Wherein, R ¹ ′ and R ² ′ each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, n represents an integer of 0 to 3, and Y represents an alkyl group having 1 to 5 carbon atoms. Or represents an aliphatic cyclic group. ]

In the formula (p1), n is preferably an integer of 0 to 2, more preferably 0 or 1, and most preferably 0.
Examples of the alkyl group for R ¹ ′ and R ² ′ include the same alkyl groups as those described above for the α-position substituent in the description of the acrylic ester, and a methyl group or an ethyl group is preferable. Is most preferred.
In the present invention, it is preferable that at least one of R ¹ ′ and R ² ′ is a hydrogen atom. That is, the acid dissociable, dissolution inhibiting group (p1) is preferably a group represented by the following general formula (p1-1).

［式中、Ｒ^１’、ｎ、Ｙは上記と同じである。］

[Wherein R ¹ ′, n and Y are the same as described above. ]

Examples of the alkyl group for Y include the same alkyl groups as those described as the α-position substituent in the description of the acrylic ester.
The aliphatic cyclic group of Y can be appropriately selected from monocyclic or polycyclic aliphatic cyclic groups conventionally proposed in a number of ArF resists and the like. For example, the above “aliphatic cyclic group” Examples are the same as the aliphatic cyclic groups mentioned in “Acid dissociable, dissolution inhibiting groups containing groups”.

  Examples of the acetal type acid dissociable, dissolution inhibiting group also include a group represented by the following general formula (p2).

［式中、Ｒ^１７、Ｒ^１８はそれぞれ独立して直鎖状若しくは分岐鎖状のアルキル基または水素原子であり；Ｒ^１９は直鎖状、分岐鎖状若しくは環状のアルキル基である。または、Ｒ^１７およびＲ^１９がそれぞれ独立に直鎖状若しくは分岐鎖状のアルキレン基であって、Ｒ^１７の末端とＲ^１９の末端とが結合して環を形成していてもよい。］

[Wherein, R ¹⁷ and R ¹⁸ each independently represents a linear or branched alkyl group or a hydrogen atom; and R ¹⁹ represents a linear, branched or cyclic alkyl group. Alternatively, R ¹⁷ and R ¹⁹ may be each independently a linear or branched alkylene group, and the end of R ^{17 and} the end of R ¹⁹ may be bonded to form a ring. ]

In R ¹⁷ and R ¹⁸ , the alkyl group preferably has 1 to 15 carbon atoms, may be linear or branched, and is preferably an ethyl group or a methyl group, and most preferably a methyl group.
In particular, it is preferable that one of R ¹⁷ and R ¹⁸ is a hydrogen atom and the other is a methyl group.
R ¹⁹ is a linear, branched or cyclic alkyl group, preferably having 1 to 15 carbon atoms, and may be any of linear, branched or cyclic.
When R ¹⁹ is linear or branched, it preferably has 1 to 5 carbon atoms, more preferably an ethyl group or a methyl group, and most preferably an ethyl group.
When R ¹⁹ is cyclic, it preferably has 4 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and most preferably 5 to 10 carbon atoms. Specifically, a monocycloalkane which may or may not be substituted with a fluorine atom or a fluorinated alkyl group; one or more polycycloalkanes such as bicycloalkane, tricycloalkane and tetracycloalkane And the like, in which a hydrogen atom is removed. Specific examples include monocycloalkanes such as cyclopentane and cyclohexane, and groups obtained by removing one or more hydrogen atoms from polycycloalkanes such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. Among them, a group obtained by removing one or more hydrogen atoms from adamantane is preferable.
In the formula (p2), R ¹⁷ and R ¹⁹ are each independently a linear or branched alkylene group (preferably an alkylene group having 1 to 5 carbon atoms), and the end of R ¹⁹ is The terminal of R ¹⁷ may be bonded.
In this case, a cyclic group is formed by R ¹⁷ , R ¹⁹ , the oxygen atom to which R ¹⁹ is bonded, and the carbon atom to which the oxygen atom and R ¹⁷ are bonded. The cyclic group is preferably a 4- to 7-membered ring, and more preferably a 4- to 6-membered ring. Specific examples of the cyclic group include a tetrahydropyranyl group and a tetrahydrofuranyl group.

  More specifically, examples of the structural unit (a1) include structural units represented by general formula (a1-0-1) shown below, structural units represented by general formula (a1-0-2) shown below, and the like. .

［式中、Ｒは水素原子、炭素数１〜５のアルキル基または炭素数１〜５のハロゲン化アルキル基であり；Ｘ^１は酸解離性溶解抑制基であり；Ｙ^２は２価の連結基であり；Ｘ^２は酸解離性溶解抑制基である。］

Wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; X ¹ is an acid dissociable, dissolution inhibiting group; Y ² is a divalent linkage. X ² is an acid dissociable, dissolution inhibiting group. ]

In general formula (a1-0-1), the alkyl group and halogenated alkyl group represented by R are the same as the alkyl group and halogenated alkyl group mentioned as the substituent at the α-position in the description of the acrylate ester, respectively. Can be mentioned. R is preferably a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a fluorinated alkyl group having 1 to 5 carbon atoms, and most preferably a hydrogen atom or a methyl group.
X ¹ is not particularly limited as long as it is an acid dissociable, dissolution inhibiting group, and examples thereof include the above-described tertiary alkyl ester type acid dissociable, dissolution inhibiting group and acetal type acid dissociable, dissolution inhibiting group. And tertiary alkyl ester type acid dissociable, dissolution inhibiting groups are preferred.
In general formula (a1-0-2), R is the same as defined above.
X ² is the same as X ¹ in formula (a1-0-1).
The divalent linking group for Y ² is not particularly limited, and examples thereof include an alkylene group, a divalent aliphatic cyclic group, a divalent aromatic cyclic group, and a divalent linking group containing a hetero atom. It is done.
When Y ² is an alkylene group, it is preferably 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, particularly preferably 1 to 4 carbon atoms, and 1 to 3 carbon atoms. Most preferably it is.
When Y ² is a divalent aliphatic cyclic group, the aliphatic cyclic group is the above-mentioned “acid containing an aliphatic cyclic group” except that it is a group in which two or more hydrogen atoms have been removed. Examples thereof include the same aliphatic cyclic groups as mentioned in the “Dissociable dissolution inhibiting group”. As the aliphatic cyclic group for Y ^2, a group in which two or more hydrogen atoms have been removed from cyclopentane, cyclohexane, norbornane, isobornane, adamantane, tricyclodecane or tetracyclododecane is particularly preferable.
When Y ² is a divalent aromatic cyclic group, examples of the aromatic cyclic group include groups in which two hydrogen atoms have been removed from an optionally substituted aromatic hydrocarbon ring. It is done. The aromatic hydrocarbon ring preferably has 6 to 15 carbon atoms, and examples thereof include a benzene ring, a naphthalene ring, a phenanthrene ring, and an anthracene ring. Among these, a benzene ring or a naphthalene ring is particularly preferable.
Examples of the substituent that the aromatic hydrocarbon ring may have include a halogen atom, an alkyl group, an alkoxy group, a halogenated lower alkyl group, and an oxygen atom (═O). Examples of the halogen atom include a fluorine atom, a chlorine atom, an iodine atom, and a bromine atom.

When Y ² is a divalent linking group containing a hetero atom, examples of the divalent linking group containing a hetero atom include —O—, —C (═O) —O—, —C (═O) —, —O—C (═O) —O—, —C (═O) —NH—, —NH— (H may be substituted with a substituent such as an alkyl group or an acyl group), —S—. , —S (═O) ₂ —, —S (═O) ₂ —O—, a group represented by the formula —A—O—B—, a formula — [A—C (═O) —O] _{m ′.} Group represented by -B-, etc. are mentioned. Here, in the formula —A—O—B— or — [A—C (═O) —O] _{m ′} —B—, A and B may each independently have a substituent. Is a valent hydrocarbon group, -O- is an oxygen atom, and m 'is an integer of 0 to 3.
When Y ² is —NH—, H may be substituted with a substituent such as an alkyl group or an acyl group. The substituent (alkyl group, acyl group, etc.) preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and particularly preferably 1 to 5 carbon atoms.

When Y ² is —A—O—B— or — [A—C (═O) —O] _{m ′} —B—, A and B may each independently have a substituent. It is a good divalent hydrocarbon group. The hydrocarbon group having “substituent” means that part or all of the hydrogen atoms in the hydrocarbon group are substituted with groups or atoms other than hydrogen atoms.
The hydrocarbon group in A may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group. An aliphatic hydrocarbon group means a hydrocarbon group having no aromaticity. The aliphatic hydrocarbon group for A may be saturated or unsaturated, and is usually preferably saturated.
Specific examples of the aliphatic hydrocarbon group for A include a linear or branched aliphatic hydrocarbon group, and an aliphatic hydrocarbon group containing a ring in the structure.
The linear or branched aliphatic hydrocarbon group preferably has 1 to 10 carbon atoms, more preferably 1 to 8, still more preferably 2 to 5, and most preferably 2.
As the linear aliphatic hydrocarbon group, a linear alkylene group is preferable. Specifically, a methylene group, an ethylene group [— (CH ₂ ) ₂ —], a trimethylene group [— (CH ₂ ) ₃ -], tetramethylene group _{[- (CH 2) 4 -} ], a pentamethylene group _{[- (CH 2) 5 -} ] , and the like.
As the branched aliphatic hydrocarbon group, a branched alkylene group is preferred, and specifically, —CH (CH ₃ ) —, —CH (CH ₂ CH ₃ ) —, —C (CH ₃ ). _{2 -, - C (CH 3} ) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as - Alkylethylene groups such as CH (CH ₃ ) CH ₂ —, —CH (CH ₃ ) CH (CH ₃ ) —, —C (CH ₃ ) ₂ CH ₂ —, —CH (CH ₂ CH ₃ ) CH ₂ —; Alkyl trimethylene groups such as —CH (CH ₃ ) CH ₂ CH ₂ —, —CH ₂ CH (CH ₃ ) CH ₂ —; —CH (CH ₃ ) CH ₂ CH ₂ CH ₂ —, —CH ₂ CH (CH _{3) CH} 2 CH ₂ - alkyl, such as alkyl tetramethylene group such as Such as an alkylene group, and the like. The alkyl group in the alkyl alkylene group is preferably a linear alkyl group having 1 to 5 carbon atoms.
These linear or branched aliphatic hydrocarbon groups may or may not have a substituent. Examples of the substituent include a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, an oxygen atom (= O), and the like.

Examples of the aliphatic hydrocarbon group containing a ring include a cyclic aliphatic hydrocarbon group (a group obtained by removing two hydrogen atoms from an aliphatic hydrocarbon ring), Examples include a group bonded to the terminal of the aromatic hydrocarbon group or interposed in the middle of the chain aliphatic hydrocarbon group.
The cyclic aliphatic hydrocarbon group preferably has 3 to 20 carbon atoms, and more preferably 3 to 12 carbon atoms.
The cyclic aliphatic hydrocarbon group may be a polycyclic group or a monocyclic group. As the monocyclic group, a group in which two hydrogen atoms have been removed from a monocycloalkane having 3 to 6 carbon atoms is preferable, and examples of the monocycloalkane include cyclopentane and cyclohexane.
As the polycyclic group, a group in which two hydrogen atoms are removed from a polycycloalkane having 7 to 12 carbon atoms is preferable. Specific examples of the polycycloalkane include adamantane, norbornane, isobornane, tricyclodecane, tetra And cyclododecane.
The cyclic aliphatic hydrocarbon group may or may not have a substituent. Examples of the substituent include a lower alkyl group having 1 to 5 carbon atoms, a fluorine atom, a fluorinated lower alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, an oxygen atom (= O), and the like.

A is preferably a linear aliphatic hydrocarbon group, more preferably a linear alkylene group, still more preferably a linear alkylene group having 1 to 5 carbon atoms, and particularly preferably a methylene group or an ethylene group. .
B is preferably a linear or branched aliphatic hydrocarbon group, more preferably a methylene group, an ethylene group or an alkylmethylene group. The alkyl group in the alkylmethylene group is preferably a linear alkyl group having 1 to 5 carbon atoms, more preferably a linear alkyl group having 1 to 3 carbon atoms, and most preferably a methyl group.
In the group represented by the formula-[AC (═O) —O] _{m ′} -B—, m ′ is an integer of 0 to 3, preferably an integer of 0 to 2, Or 1 is more preferable and 1 is most preferable.

  More specifically, examples of the structural unit (a1) include structural units represented by the following general formulas (a1-1) to (a1-4).

［式中、Ｒ、Ｒ^１’、Ｒ^２’、ｎ、ＹおよびＹ^２はそれぞれ前記と同じであり、Ｘ’は第３級アルキルエステル型酸解離性溶解抑制基を表す。］

[Wherein, R, R ¹ ′, R ² ′, n, Y and Y ² are the same as defined above, and X ′ represents a tertiary alkyl ester-type acid dissociable, dissolution inhibiting group. ]

In the formula, X ′ is the same as the tertiary alkyl ester type acid dissociable, dissolution inhibiting group.
^{R 1 ', R 2',} n, as the Y, respectively, ^{R 1} in the general formula listed in the description of "acetal-type acid dissociable, dissolution inhibiting group" described above ^{(p1) ', R 2'} , n, Y The same thing is mentioned.
The Y ^2, the same groups as those described above for ^{Y 2} in the general formula (a1-0-2).
Specific examples of the structural units represented by the general formulas (a1-1) to (a1-4) are shown below.
In the following formulas, R ^α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

As the structural unit (a1), one type may be used alone, or two or more types may be used in combination.
Among the above, the structural unit (a1) is preferably a structural unit represented by the general formula (a1-1) or (a1-3). Specifically, the structural unit (a1-1) to ( a1-1-4), (a1-1-20) to (a1-1-23), formula (a1-1-26), formula (a1-1-32) to (a1-1-33) and formula It is more preferable to use at least one selected from the group consisting of structural units represented by (a1-3-25) to (a1-3-32).
Furthermore, as the structural unit (a1), the following general formula (a1-) including the structural units represented by the formulas (a1-1-1) to (a1-1-3) and the formula (a1-1-26) 1-01), formulas (a1-1-16) to (a1-1-17), (a1-1-20) to (a1-1-23) and formula (a1-1-32) ) To (a1-1-33) and those represented by the following general formula (a1-1-02), which includes the structural units represented by formulas (a1-3-25) to (a1-3-26) The structural unit represented by the following general formula (a1-3-01), which includes the structural unit represented by formula (a1-3-27) to (a1-3-28) is included. What is represented by the following general formula (a1-3-02), the following general formula (a1) including structural units of the formulas (a1-3-29) to (a1-3-32) Are preferably those represented by 3-03).

［式中、Ｒは水素原子、炭素数１〜５のアルキル基または炭素数１〜５のハロゲン化アルキル基を示し、Ｒ^１１は炭素数１〜５のアルキル基を示し、Ｒ^１２は炭素数１〜５のアルキル基を示し、ｈは１〜６の整数を示す。］

[Wherein, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms, R ¹¹ represents an alkyl group having 1 to 5 carbon atoms, and R ¹² represents a carbon number. 1 to 5 represents an alkyl group, and h represents an integer of 1 to 6. ]

In general formula (a1-1-01), R is the same as defined above.
Examples of the alkyl group for R ¹¹ include the same alkyl groups as those described above for R, and a methyl group, an ethyl group, or an isopropyl group is preferable.
In general formula (a1-1-02), R is the same as defined above.
Examples of the alkyl group for R ¹² include the same alkyl groups as those described above for R, and a methyl group, an ethyl group, or an isopropyl group is preferable.
h is preferably 1 or 2, and most preferably 2.

［式中、Ｒは水素原子、炭素数１〜５のアルキル基または炭素数１〜５のハロゲン化アルキル基を示し；Ｒ^１４は炭素数１〜５のアルキル基であり、Ｒ^１３は水素原子またはメチル基であり、ｙは１〜１０の整数であり、ｎ’は１〜６の整数である。］

[Wherein, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R ¹⁴ represents an alkyl group having 1 to 5 carbon atoms, and R ¹³ represents a hydrogen atom. Or it is a methyl group, y is an integer of 1-10, n 'is an integer of 1-6. ]

In formula (a1-3-01) or (a1-3-02), R is the same as described above.
R ¹³ is preferably a hydrogen atom.
Alkyl group for R ¹⁴ is the formula (1-1) is the same as ^{R 14} in - (1-9), a methyl group, an ethyl group or an isopropyl group.
y is preferably an integer of 1 to 8, particularly preferably an integer of 2 to 5, and most preferably 2.
n ′ is most preferably 1 or 2.

［式中、Ｒは前記と同じであり、Ｙ^２’およびＹ^２”はそれぞれ独立して２価の連結基であり、Ｘ’は酸解離性溶解抑制基であり、ｗは０〜３の整数である。］

[Wherein, R is the same as defined above, Y ² ′ and Y ² ″ are each independently a divalent linking group, X ′ is an acid dissociable, dissolution inhibiting group, and w is 0-3. It is an integer.]

In formula (a1-3-03), examples of the divalent linking group for Y ² ′ and Y ² ″ include the same groups as those described above for Y ² in formula (a1-3).
Y ² ′ is preferably a divalent hydrocarbon group which may have a substituent, more preferably a linear aliphatic hydrocarbon group, and even more preferably a linear alkylene group. Among these, a linear alkylene group having 1 to 5 carbon atoms is preferable, and a methylene group and an ethylene group are most preferable.
Y ² ″ is preferably a divalent hydrocarbon group which may have a substituent, more preferably a linear aliphatic hydrocarbon group, and still more preferably a linear alkylene group. A linear alkylene group of 1 to 5 is preferable, and a methylene group and an ethylene group are most preferable.
Examples of the acid dissociable, dissolution inhibiting group in X ′ include the same groups as described above, and are preferably tertiary alkyl ester type acid dissociable, dissolution inhibiting groups, and (i) the monovalent aliphatic cyclic group described above. A group having a tertiary carbon atom on the ring skeleton of the group is more preferable, and among them, the group represented by the general formula (1-1) is preferable.
w is an integer of 0 to 3, and w is preferably an integer of 0 to 2, more preferably 0 or 1, and most preferably 1.

  In the component (A1), the proportion of the structural unit (a1) is preferably 10 to 80 mol%, more preferably 20 to 70 mol%, more preferably 25 to 50 mol, based on all structural units constituting the component (A1). % Is more preferable. By setting it to the lower limit value or more, a pattern can be easily obtained when the resist composition is used, and by setting it to the upper limit value or less, it is possible to balance with other structural units.

Structural unit (a2):
The structural unit (a2) is a structural unit derived from an acrylate ester containing a lactone-containing cyclic group.
Here, the lactone-containing cyclic group refers to a cyclic group containing one ring (lactone ring) containing a —O—C (═O) — structure. The lactone ring is counted as the first ring, and when it is only the lactone ring, it is called a monocyclic group, and when it has another ring structure, it is called a polycyclic group regardless of the structure.
When the component (A1) is used for forming a resist film, the lactone cyclic group of the structural unit (a2) increases the adhesion of the resist film to the substrate or has an affinity for a developer containing water. It is effective in raising.
The lactone cyclic group in the structural unit (a2) is not particularly limited, and any one can be used. Specifically, the lactone-containing monocyclic group is a group obtained by removing one hydrogen atom from a 4- to 6-membered ring lactone, such as a group obtained by removing one hydrogen atom from β-propionolactone, or γ-butyrolactone. Examples thereof include a group in which one hydrogen atom has been removed and a group in which one hydrogen atom has been removed from δ-valerolactone. Examples of the lactone-containing polycyclic group include groups in which one hydrogen atom has been removed from a bicycloalkane, tricycloalkane, or tetracycloalkane having a lactone ring.
More specifically, examples of the structural unit (a2) include structural units represented by general formulas (a2-1) to (a2-5) shown below.

［式中、Ｒは水素原子、炭素数１〜５のアルキル基または炭素数１〜５のハロゲン化アルキル基であり；Ｒ’はそれぞれ独立に水素原子、炭素数１〜５のアルキル基、炭素数１〜５のアルコキシ基または−ＣＯＯＲ”であり、Ｒ”は水素原子またはアルキル基であり；Ｒ^２９は単結合または２価の連結基であり、ｓ”は０〜２の整数であり；Ａ”は酸素原子もしくは硫黄原子を含んでいてもよい炭素数１〜５のアルキレン基、酸素原子または硫黄原子であり；ｍは０または１である。］

[Wherein, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; R ′ is independently a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, carbon An alkoxy group of 1 to 5 or —COOR ″, R ″ is a hydrogen atom or an alkyl group; R ²⁹ is a single bond or a divalent linking group, and s ″ is an integer of 0 to 2; A ″ is an alkylene group having 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom, an oxygen atom or a sulfur atom; m is 0 or 1. ]

R in the general formulas (a2-1) to (a2-5) is the same as R in the structural unit (a1).
Examples of the alkyl group having 1 to 5 carbon atoms of R ′ include a methyl group, an ethyl group, a propyl group, an n-butyl group, and a tert-butyl group.
Examples of the alkoxy group having 1 to 5 carbon atoms of R ′ include a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, and a tert-butoxy group.
R ′ is preferably a hydrogen atom in view of industrial availability.
The alkyl group in R ″ may be linear, branched or cyclic.
When R ″ is a linear or branched alkyl group, it preferably has 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms.
When R ″ is a cyclic alkyl group, it preferably has 3 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and most preferably 5 to 10 carbon atoms. Specifically, a fluorine atom Or a group in which one or more hydrogen atoms have been removed from a polycycloalkane such as monocycloalkane, bicycloalkane, tricycloalkane, and tetracycloalkane, which may or may not be substituted with a fluorinated alkyl group Specifically, a group in which one or more hydrogen atoms have been removed from a monocycloalkane such as cyclopentane or cyclohexane, or a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, or tetracyclododecane. Etc.
A ″ is preferably an alkylene group having 1 to 5 carbon atoms, an oxygen atom (—O—) or a sulfur atom (—S—), more preferably an alkylene group having 1 to 5 carbon atoms or —O—. The alkylene group having 1 to 5 carbon atoms is more preferably a methylene group or dimethylmethylene group, and most preferably a methylene group.
R ²⁹ is a single bond or a divalent linking group. Examples of the divalent linking group include the same divalent linking groups as those described for Y ² in formula (a1-0-2). Among these, an alkylene group, an ester bond (—C (═O) —O—), or a combination thereof is preferable. The alkylene group as the divalent linking group for R ²⁹ is more preferably a linear or branched alkylene group. Specifically, in the description of Y ² , the same as the linear alkylene group and branched alkylene group mentioned as the aliphatic hydrocarbon group for A can be used.
As R ²⁹ , in particular, a single bond or —R ²⁹ ′ —C (═O) —O— [wherein R ²⁹ ′ is a linear or branched alkylene group. ] Is preferable. The linear or branched alkylene group for R ²⁹ ′ preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and still more preferably 1 to 5 carbon atoms.
In formula (a2-1), s ″ is preferably 1 to 2.
Specific examples of the structural units represented by the general formulas (a2-1) to (a2-5) are shown below. In the following formulas, R ^α represents a hydrogen atom, a methyl group or a trifluoromethyl group.

In the component (A1), as the structural unit (a2), one type may be used alone, or two or more types may be used in combination.
As the structural unit (a2), at least one selected from the group consisting of structural units represented by the general formulas (a2-1) to (a2-5) is preferable, and the general formulas (a2-1) to ( At least one selected from the group consisting of structural units represented by a2-3) is more preferred. Among them, chemical formulas (a2-1-1), (a2-1-2), (a2-2-1), (a2-2-7), (a2-3-1) and (a2-3-5) And at least one selected from the group consisting of structural units represented by
In the component (A1), the proportion of the structural unit (a2) is preferably 5 to 60 mol%, more preferably 10 to 50 mol%, with respect to the total of all structural units constituting the component (A1). 50 mol% is more preferable. By making it the lower limit value or more, the effect of containing the structural unit (a2) can be sufficiently obtained, and by making it the upper limit value or less, it is possible to balance with other structural units.

-Structural unit (a3):
The structural unit (a3) is a structural unit derived from an acrylate ester containing a polar group-containing aliphatic hydrocarbon group.
When the component (A1) has the structural unit (a3), the hydrophilicity of the component (A) is increased, the affinity with the developer is increased, the alkali solubility in the exposed area is improved, and the resolution is improved. Contributes to improvement.
Examples of the polar group include a hydroxyl group, a cyano group, a carboxy group, and a fluorinated alcohol group (a hydroxyalkyl group in which a part of the hydrogen atoms of the alkyl group is substituted with a fluorine atom). A hydroxyl group is particularly preferable.
In the structural unit (a3), the number of polar groups bonded to the aliphatic hydrocarbon group is not particularly limited, but is preferably 1 to 3, and most preferably 1.
Examples of the aliphatic hydrocarbon group to which the polar group is bonded include a linear or branched hydrocarbon group having 1 to 10 carbon atoms (preferably an alkylene group) and a cyclic aliphatic hydrocarbon group (cyclic group). ). The cyclic group may be a monocyclic group or a polycyclic group. For example, a resin for a resist composition for an ArF excimer laser can be appropriately selected from those proposed. The cyclic group is preferably a polycyclic group, and more preferably 7 to 30 carbon atoms.
The structural unit (a3) is preferably a structural unit derived from an acrylate ester containing an aliphatic polycyclic group containing a hydroxyl group, a cyano group, a carboxy group or a fluorinated alcohol group. Examples of the polycyclic group include groups in which two or more hydrogen atoms have been removed from bicycloalkane, tricycloalkane, tetracycloalkane and the like. Specific examples include groups in which two or more hydrogen atoms have been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. Among these polycyclic groups, there are groups in which two or more hydrogen atoms have been removed from adamantane, groups in which two or more hydrogen atoms have been removed from norbornane, and groups in which two or more hydrogen atoms have been removed from tetracyclododecane. Industrially preferable.

When the hydrocarbon group in the polar group-containing aliphatic hydrocarbon group is a linear or branched hydrocarbon group having 1 to 10 carbon atoms, the structural unit (a3) is derived from hydroxyethyl ester of acrylic acid. Are preferred.
When the hydrocarbon group in the polar group-containing aliphatic hydrocarbon group is a polycyclic group, the structural unit (a3) is a structural unit represented by the following formula (a3-1), a general formula (a3-2) ), A structural unit represented by the general formula (a3-3), and the like are preferable. Especially, the structural unit represented by general formula (a3-1) is preferable.

（式中、Ｒは前記と同じであり、ｊは１〜３の整数であり、ｋは１〜３の整数であり、ｔ’は１〜３の整数であり、ｌは１〜５の整数であり、ｓは１〜３の整数である。）

(In the formula, R is the same as above, j is an integer of 1 to 3, k is an integer of 1 to 3, t 'is an integer of 1 to 3, and l is an integer of 1 to 5) And s is an integer of 1 to 3.)

In formula (a3-1), j is preferably 1 or 2, and more preferably 1. When j is 2, it is preferable that the hydroxyl group is bonded to the 3rd and 5th positions of the adamantyl group. When j is 1, it is preferable that the hydroxyl group is bonded to the 3-position of the adamantyl group.
j is preferably 1, and a hydroxyl group bonded to the 3rd position of the adamantyl group is particularly preferred.
In formula (a3-2), k is preferably 1. The cyano group is preferably bonded to the 5th or 6th position of the norbornyl group.
In formula (a3-3), t ′ is preferably 1. l is preferably 1. s is preferably 1. These preferably have a 2-norbornyl group or a 3-norbornyl group bonded to the terminal of the carboxy group of acrylic acid. The fluorinated alkyl alcohol is preferably bonded to the 5th or 6th position of the norbornyl group.

As the structural unit (a3), one type may be used alone, or two or more types may be used in combination.
In the component (A1), the proportion of the structural unit (a3) is preferably 5 to 50 mol%, more preferably 5 to 40 mol%, based on all structural units constituting the component (A1). More preferred is ˜25 mol%. By setting it to the lower limit value or more, the effect of containing the structural unit (a3) can be sufficiently obtained, and by setting it to the upper limit value or less, it is possible to balance with other structural units.

-Structural unit (a0):
The structural unit (a0) is a structural unit derived from an acrylate ester containing a —SO ₂ — containing cyclic group.
Preferred examples of the structural unit (a0) include structural units represented by general formula (a0-1) shown below.

［式（ａ０−１）中、Ｒは水素原子、炭素数１〜５のアルキル基又は炭素数１〜５のハロゲン化アルキル基であり、Ｒ^２は２価の連結基であり、Ｒ^３はその環骨格中に−ＳＯ_２−を含む環式基である。］

[In the formula (a0-1), R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms, R ² is a divalent linking group, and R ³ is It is a cyclic group containing —SO ₂ — in the ring skeleton. ]

In the formula (a0-1), R is the same as R in the structural unit (a1).
In Formula (a0-1), R ² is a divalent linking group.
Preferred examples of R ² include a divalent hydrocarbon group which may have a substituent and a divalent linking group containing a hetero atom.
The hydrocarbon group in R ² may be an aliphatic hydrocarbon group or an aromatic hydrocarbon group, and in the description of Y ² in the general formula (a1-0-2), This is the same as the exemplified “hydrocarbon group in A”.
The divalent linking group containing a hetero atom in R ² is the same as the “divalent linking group containing a hetero atom” in Y ² in the general formula (a1-0-2).

In the present invention, the divalent linking group for R ² is preferably an alkylene group, a divalent aliphatic cyclic group or a divalent linking group containing a hetero atom. Among these, an alkylene group is particularly preferable.
When R ² is an alkylene group, the alkylene group preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms, and particularly preferably 1 to 4 carbon atoms. It is most preferable that it is number 1-3. Specific examples include the same linear alkylene groups and branched alkylene groups as mentioned above.
When R ² is a divalent aliphatic cyclic group, the aliphatic cyclic group is the same as the cyclic aliphatic hydrocarbon group mentioned in the above “aliphatic hydrocarbon group containing a ring in the structure”. Can be mentioned.
The aliphatic cyclic group is particularly preferably a group in which two or more hydrogen atoms have been removed from cyclopentane, cyclohexane, norbornane, isobornane, adamantane, tricyclodecane or tetracyclododecane.

When R ² is a divalent linking group containing a hetero atom, preferred examples of the linking group include —O—, —C (═O) —O—, —C (═O) —, —O—. C (= O) -O-, -C (= O) -NH-, -NR ^04- (R ⁰⁴ is a substituent such as an alkyl group, an acyl group, etc.), -S-, -S (= O ) ₂ —, —S (═O) ₂ —O—, a group represented by the formula —A—O—B—, represented by the formula — [A—C (═O) —O] _{q ′} —B—. And the like. Here, A and B are each independently a divalent hydrocarbon group which may have a substituent, and are the same as A and B described above. q ′ is an integer of 0 to 3.
Examples of the divalent hydrocarbon group which may have a substituent in A and B are the same as those mentioned as the “divalent hydrocarbon group which may have a substituent” in R ² described above. Can be mentioned.
A is preferably a linear aliphatic hydrocarbon group, more preferably a linear alkylene group, still more preferably a linear alkylene group having 1 to 5 carbon atoms, and particularly preferably a methylene group or an ethylene group. .
B is preferably a linear or branched aliphatic hydrocarbon group, more preferably a methylene group, an ethylene group or an alkylmethylene group. The alkyl group in the alkylmethylene group is preferably a linear alkyl group having 1 to 5 carbon atoms, more preferably a linear alkyl group having 1 to 3 carbon atoms, and most preferably a methyl group.
In the group represented by the formula-[AC (= O) -O] _{q '} -B-, q' is an integer of 0 to 3, preferably an integer of 0 to 2, Or 1 is more preferable and 1 is most preferable.

R ² may or may not have an acid dissociable site in its structure.
The “acid-dissociable site” refers to a site in the structure of R ² that is dissociated by the action of an acid generated by exposure. When R ² has an acid dissociable portion, it is preferable that it preferably has an acid dissociable portion having a tertiary carbon atom.

In the formula (a0-1), R ³ is a cyclic group containing —SO ₂ — in the ring skeleton. Specifically, R ³ is a cyclic group in which the sulfur atom (S) in —SO ₂ — forms part of the cyclic skeleton of the cyclic group.
The cyclic group in R ³ represents a cyclic group containing a ring containing —SO ₂ — in the ring skeleton, and the ring is counted as the first ring. When the group has another ring structure, it is called a polycyclic group regardless of the structure. The cyclic group for R ³ may be a monocyclic group or a polycyclic group.
Among them, ^{R 3} is, -O-SO ₂ within the ring skeleton thereof - sultone (sultone that over O-S- medium forms part of the ring skeleton - cyclic group containing, i.e. -O-SO ₂ ) Ring.
The cyclic group for R ³ preferably has 3 to 30 carbon atoms, more preferably 4 to 20 carbon atoms, still more preferably 4 to 15 carbon atoms, and particularly preferably 4 to 12 carbon atoms.
However, the carbon number is the number of carbon atoms constituting the ring skeleton, and does not include the carbon number in the substituent.
The cyclic group for R ³ may be an aliphatic cyclic group or an aromatic cyclic group, and is preferably an aliphatic cyclic group.
As the aliphatic cyclic group for R ³ , one of carbon atoms constituting the ring skeleton of the cyclic aliphatic hydrocarbon group exemplified in the description of the hydrocarbon group for R ² described above, that is, the “hydrocarbon group for A” described above. And those in which the moiety is substituted with —SO ₂ — or —O—SO ₂ —.
More specifically, for example, the monocyclic group includes a group obtained by removing one hydrogen atom from a monocycloalkane in which —CH ₂ — constituting the ring skeleton is substituted with —SO ₂ —, and the ring And a group obtained by removing one hydrogen atom from a monocycloalkane in which —CH ₂ —CH ₂ — constituting R ₁ is substituted with —O—SO ₂ —. The polycyclic group includes one hydrogen atom from a polycycloalkane (bicycloalkane, tricycloalkane, tetracycloalkane, etc.) in which —CH ₂ — constituting the ring skeleton is substituted with —SO ₂ —. And a group obtained by removing one hydrogen atom from a polycycloalkane in which —CH ₂ —CH ₂ — constituting the ring is substituted with —O—SO ₂ —.

The cyclic group for R ³ may have a substituent. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, an oxygen atom (═O), —COOR ″, —OC (═O) R ″, a hydroxyalkyl group, a cyano group, and the like. Is mentioned. R ″ represents a hydrogen atom or an alkyl group, and is the same as R ″ described above.
The alkyl group as the substituent is preferably an alkyl group having 1 to 6 carbon atoms. The alkyl group is preferably linear or branched. Specific examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a neopentyl group, and a hexyl group. Among these, a methyl group or an ethyl group is preferable, and a methyl group is particularly preferable.
The alkoxy group as the substituent is preferably an alkoxy group having 1 to 6 carbon atoms. The alkoxy group is preferably linear or branched. Specifically, the group couple | bonded with the oxygen atom (-O-) to the alkyl group quoted as the alkyl group as the said substituent is mentioned.
Examples of the halogen atom as the substituent include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
Examples of the halogenated alkyl group for the substituent include groups in which part or all of the hydrogen atoms of the alkyl group have been substituted with the halogen atoms.
Examples of the halogenated alkyl group as the substituent include a group in which part or all of the hydrogen atoms of the alkyl group mentioned as the alkyl group as the substituent are substituted with the halogen atom. As the halogenated alkyl group, a fluorinated alkyl group is preferable, and a perfluoroalkyl group is particularly preferable.
R ″ in —COOR ″ and —OC (═O) R ″ is preferably a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 15 carbon atoms.
When R ″ is a linear or branched alkyl group, it preferably has 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and particularly preferably a methyl group or an ethyl group. preferable.
When R ″ is a cyclic alkyl group, it preferably has 3 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and most preferably 5 to 10 carbon atoms. Specifically, a fluorine atom Or a monocycloalkane which may or may not be substituted with a fluorinated alkyl group; a group in which one or more hydrogen atoms have been removed from a polycycloalkane such as a bicycloalkane, tricycloalkane or tetracycloalkane More specifically, one or more hydrogen atoms are removed from a monocycloalkane such as cyclopentane or cyclohexane, or a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, or tetracyclododecane. Group and the like.
The hydroxyalkyl group as the substituent is preferably one having 1 to 6 carbon atoms. Specifically, at least one of the hydrogen atoms of the alkyl group mentioned as the alkyl group as the substituent is substituted with a hydroxyl group. Group.
More specifically, examples of R ³ include groups represented by the following general formulas (3-1) to (3-4).

［式中、Ａ’は酸素原子若しくは硫黄原子を含んでいてもよい炭素数１〜５のアルキレン基、酸素原子又は硫黄原子であり；ｔは０〜２の整数であり；Ｒ^２８はアルキル基、アルコキシ基、ハロゲン化アルキル基、水酸基、−ＣＯＯＲ”、−ＯＣ（＝Ｏ）Ｒ”、ヒドロキシアルキル基又はシアノ基であり、Ｒ”は水素原子又はアルキル基である。］

[Wherein, A ′ is an alkylene group having 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom, an oxygen atom or a sulfur atom; t is an integer of 0 to 2; and R ²⁸ is an alkyl group. An alkoxy group, a halogenated alkyl group, a hydroxyl group, —COOR ″, —OC (═O) R ″, a hydroxyalkyl group or a cyano group, and R ″ is a hydrogen atom or an alkyl group.]

In the general formulas (3-1) to (3-4), A ′ represents an alkylene group having 1 to 5 carbon atoms which may contain an oxygen atom (—O—) or a sulfur atom (—S—), An oxygen atom or a sulfur atom.
The alkylene group having 1 to 5 carbon atoms in A ′ is preferably a linear or branched alkylene group, and examples thereof include a methylene group, an ethylene group, an n-propylene group, and an isopropylene group.
When the alkylene group contains an oxygen atom or a sulfur atom, specific examples thereof include a group in which —O— or —S— is interposed between the terminal or carbon atoms of the alkylene group, such as —O—CH _{2. -, - CH 2 -O-CH} 2 -, - S-CH 2 -, - CH 2 -S-CH 2 - , and the like.
A ′ is preferably an alkylene group having 1 to 5 carbon atoms or —O—, more preferably an alkylene group having 1 to 5 carbon atoms, and most preferably a methylene group.
t may be any integer from 0 to 2, and 0 is most preferred.
When t is 2, the plurality of R ²⁸ may be the same or different.
As the alkyl group, alkoxy group, halogenated alkyl group, —COOR ″, —OC (═O) R ″, and hydroxyalkyl group in R ²⁸ , each of the cyclic groups in R ³ may have a substituent. Examples thereof include the same alkyl groups, alkoxy groups, halogenated alkyl groups, —COOR ″, —OC (═O) R ″, and hydroxyalkyl groups mentioned as groups.
Below, the specific cyclic group represented by the said general formula (3-1)-(3-4) is illustrated. In the formula, “Ac” represents an acetyl group.

Among the above, R ³ is preferably a cyclic group represented by the general formula (3-1), (3-3) or (3-4), and represented by the general formula (3-1). A cyclic group is particularly preferable.
Specifically, R ³ includes a cyclic group represented by the chemical formulas (3-1-1), (3-1-18), (3-3-1), and (3-4-1). It is more preferable to use at least one selected from the group, and the cyclic group represented by the chemical formula (3-1-1) is most preferable.

  In the present invention, the structural unit (a0) is particularly preferably a structural unit represented by the following general formula (a0-1-11).

［式中、Ｒは前記と同じであり、Ｒ^０２は直鎖状若しくは分岐鎖状のアルキレン基又は−Ａ−Ｃ（＝Ｏ）−Ｏ−Ｂ−（Ａ、Ｂは前記と同じである。）であり、Ａ’は前記と同じである。］

[Wherein, R is the same as described above, R ⁰² is a linear or branched alkylene group, or —A—C (═O) —O—B— (A and B are the same as described above. And A ′ is the same as described above. ]

The linear or branched alkylene group for R ⁰² preferably has 1 to 10 carbon atoms, more preferably 1 to 8, still more preferably 1 to 5, particularly preferably 1 to 3, 2 is most preferred.
In -A-C (= O) -OB-, each of A and B is preferably a linear or branched alkylene group, more preferably a C 1-5 alkylene group, a methylene group, ethylene The group is particularly preferred. _{Specifically, - (CH 2) 2 -C} (= O) -O- (CH 2) 2 -, - (CH 2) 2 -O-C (= O) - (CH 2) 2 - include It is done.
A ′ is preferably a methylene group, an oxygen atom (—O—) or a sulfur atom (—S—).

As the structural unit (a0), one type may be used alone, or two or more types may be used in combination.
The proportion of the structural unit (a0) in the component (A1) is preferably 1 to 60 mol%, more preferably 5 to 55 mol%, based on the total of all the structural units constituting the component (A1). 10-50 mol% is more preferable and 15-45 mol% is the most preferable. By setting the lower limit value or more, lithography characteristics such as exposure margin (EL margin) and LWR (line width roughness) of the resist pattern to be formed are excellent. By setting it to the upper limit value or less, it is possible to balance with other structural units.

・ Other structural units:
The component (A1) may contain other structural units other than the structural units (a1) to (a3) and (a0) as long as the effects of the present invention are not impaired.
The other structural units are not particularly limited as long as they are other structural units that are not classified into the structural units (a1) to (a3) and (a0) described above. A number of hitherto known materials can be used as those used for resist resins (preferably for ArF excimer laser).
Examples of the other structural unit include a structural unit (a4) derived from an acrylate ester containing a non-acid-dissociable aliphatic polycyclic group, and a structural unit represented by the general formula (a5 ′) described later. (A5 ′) and the like.

..Structural unit (a4):
Examples of the aliphatic polycyclic group in the structural unit (a4) include those similar to those exemplified in the case of the structural unit (a1). For the ArF excimer laser and the KrF excimer laser ( A number of hitherto known materials can be used as the resin component of the resist composition (preferably for ArF excimer laser). In particular, at least one selected from a tricyclodecyl group, an adamantyl group, a tetracyclododecyl group, an isobornyl group, and a norbornyl group is preferable in terms of industrial availability. These polycyclic groups may have a linear or branched alkyl group having 1 to 5 carbon atoms as a substituent.
Specific examples of the structural unit (a4) include those represented by the following general formulas (a4-1) to (a4-5).

（式中、Ｒは前記と同じである。）

(In the formula, R is as defined above.)

  When the structural unit (a4) is contained in the component (A1), the structural unit (a4) is preferably contained in an amount of 1 to 30 mol% based on the total of all the structural units constituting the component (A1). It is more preferable to make it contain 10-20 mol%.

..Structural unit (a5 ′):
When the structural unit (a5 ′) is contained in the component (A1), the structural unit (a5 ′) is contained in an amount of 1 to 45 mol% with respect to the total of all the structural units constituting the component (A1). Preferably, 5 to 45 mol% is contained, more preferably 5 to 40 mol%, still more preferably 5 to 35 mol%. By setting it to the lower limit value or more, the solubility in an organic solvent such as an alcohol organic solvent, a fluorine organic solvent, or an ether organic solvent having no hydroxyl group is improved. And the balance is good.

The component (A1) is preferably a polymer having the structural unit (a1). The component (A1) is a copolymer having the structural unit (a1) and at least one structural unit selected from the group consisting of the structural unit (a0) and the structural unit (a2). In addition to these structural units, it is also preferred that the copolymer further has a structural unit (a3).
Examples of such a copolymer include a copolymer comprising the structural units (a1), (a2) and (a3); a copolymer comprising the structural units (a1), (a2), (a3) and (a0). A copolymer composed of structural units (a1), (a2), (a3) and (a4); a copolymer composed of structural units (a1), (a2), (a3) and (a5 ′), etc. it can.
In the component (A), as the component (A1), one type may be used alone, or two or more types may be used in combination.

The mass average molecular weight (Mw) of the component (A1) (polystyrene conversion standard by gel permeation chromatography (GPC)) is not particularly limited, preferably 1000 to 50000, more preferably 1500 to 30000, and 2000 to 2000 20000 is most preferred. If it is below the upper limit of this range, it has sufficient solubility in a resist solvent to be used as a resist, and if it is above the lower limit of this range, dry etching resistance and resist pattern cross-sectional shape are good.
Further, the dispersity (Mw / Mn) of the component (A1) is not particularly limited, but is preferably 1.0 to 5.0, more preferably 1.0 to 3.0, and 1.0 to 2.5. Most preferred. In addition, Mn shows a number average molecular weight.

The component (A1) can be obtained by polymerizing a monomer for deriving each structural unit by a known radical polymerization using a radical polymerization initiator such as azobisisobutyronitrile (AIBN).
Further, for the component (A1), in the polymerization, a chain transfer agent such as HS—CH ₂ —CH ₂ —CH ₂ —C (CF ₃ ) ₂ —OH is used in combination, so that the terminal A —C (CF ₃ ) ₂ —OH group may be introduced into the. As described above, a copolymer introduced with a hydroxyalkyl group in which a part of hydrogen atoms of an alkyl group is substituted with a fluorine atom reduces development defects and LER (line edge roughness: uneven unevenness of line side walls). It is effective in reducing

A commercially available monomer may be used as the monomer for deriving each structural unit, or the monomer may be synthesized using a known method.
For example, as a monomer for deriving the structural unit (a0), a compound represented by the following general formula (a0-1-0) (hereinafter referred to as “compound (a0-1-0)”) can be given.

［式（ａ０−１−０）中、Ｒ、Ｒ^２およびＲ^３はそれぞれ前記と同じである。］

[In the formula (a0-1-0), R, R ² and R ³ are the same as defined above. ]

The manufacturing method of this compound (a0-1-0) is not specifically limited, It can manufacture using a well-known method.
For example, in the presence of a base, a compound (X-) represented by the following general formula (X-2) is added to a solution in which the compound (X-1) represented by the following general formula (X-1) is dissolved in the reaction solvent. The compound (a0-1-0) is obtained by adding and reacting 2).
Examples of the base include inorganic bases such as sodium hydride, K ₂ CO ₃ and Cs ₂ CO ₃ ; organic bases such as triethylamine, 4-dimethylaminopyridine (DMAP) and pyridine. Examples of the condensing agent include carbodiimide reagents such as ethyldiisopropylaminocarbodiimide (EDCI) hydrochloride, dicyclohexylcarboimide (DCC), diisopropylcarbodiimide, carbodiimidazole, tetraethylpyrophosphate, benzotriazole-N-hydroxytrisdimethylaminophosphonium hexa Fluorophosphide salt (Bop reagent) and the like.
Moreover, you may use an acid as needed. As the acid, those usually used in dehydration condensation and the like can be used. Specifically, inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, methanesulfonic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, p- Organic acids such as toluenesulfonic acid can be mentioned. These may be used alone or in combination of two or more.

[(A2) component]
The component (A2) is preferably a low molecular compound having a molecular weight of 500 or more and less than 4000 and having an acid dissociable, dissolution inhibiting group and a hydrophilic group as exemplified in the description of the component (A1). Specifically, a compound in which a part of hydrogen atoms of a hydroxyl group of a compound having a plurality of phenol skeletons is substituted with the acid dissociable, dissolution inhibiting group can be mentioned.
The component (A2) is, for example, a part of the hydrogen atom of the hydroxyl group of a low molecular weight phenol compound known as a sensitizer in a non-chemically amplified g-line or i-line resist or a heat resistance improver. Those substituted with a soluble dissolution inhibiting group are preferred and can be arbitrarily used.
Examples of such low molecular weight phenol compounds include bis (4-hydroxyphenyl) methane, bis (2,3,4-trihydroxyphenyl) methane, and bis (4-hydroxy-3-methylphenyl) -3,4-dihydroxy. Phenylmethane, bis (3-cyclohexyl-4-hydroxy-6-methylphenyl) -4-hydroxyphenylmethane, bis (3-cyclohexyl-4-hydroxy-6-methylphenyl) -3,4-dihydroxyphenylmethane, 1 -[1- (4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, bis (2,3, -trihydroxyphenyl) methane, bis (2,4- Dihydroxyphenyl) methane, 2,3,4-trihydroxyphenyl-4′-hydroxy Siphenylmethane, 2- (2,3,4-trihydroxyphenyl) -2- (2 ′, 3 ′, 4′-trihydroxyphenyl) propane, 2- (2,4-dihydroxyphenyl) -2- ( 2 ', 4'-dihydroxyphenyl) propane, 2- (4-hydroxyphenyl) -2- (4'-hydroxyphenyl) propane, 2- (3-fluoro-4-hydroxyphenyl) -2- (3'- Fluoro-4'-hydroxyphenyl) propane, 2- (2,4-dihydroxyphenyl) -2- (4'-hydroxyphenyl) propane, 2- (2,3,4-trihydroxyphenyl) -2- (4 Bisphenol-type conversion such as '-hydroxyphenyl) propane and 2- (2,3,4-trihydroxyphenyl) -2- (4'-hydroxy-3', 5'-dimethylphenyl) propane Compound: Tris (4-hydroxyphenyl) methane, bis (4-hydroxy-3-methylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,3,5-trimethylphenyl) -2-hydroxy Phenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -3-hydroxyphenylmethane, bis (4-hydroxy-3) , 5-dimethylphenyl) -2-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -4-hydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -3-hydroxy Phenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -2-hydro Siphenylmethane, bis (4-hydroxy-3,5-dimethylphenyl) -3,4-dihydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -3,4-dihydroxyphenylmethane, bis ( 4-hydroxy-2,5-dimethylphenyl) -2,4-dihydroxyphenylmethane, bis (4-hydroxyphenyl) -3-methoxy-4-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-) Methylphenyl) -4-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -3-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -2- Hydroxyphenylmethane and bis (5-cyclohexyl- Trisphenol type compounds such as -hydroxy-2-methylphenyl) -3,4-dihydroxyphenylmethane; 2,4-bis (3,5-dimethyl-4-hydroxybenzyl) -5-hydroxyphenol, and 2,6 -Linear trinuclear phenol compounds such as bis (2,5-dimethyl-4-hydroxybenzyl) -4-methylphenol; 1,1-bis [3- (2-hydroxy-5-methylbenzyl) -4- Hydroxy-5-cyclohexylphenyl] isopropane, bis [2,5-dimethyl-3- (4-hydroxy-5-methylbenzyl) -4-hydroxyphenyl] methane, bis [2,5-dimethyl-3- (4) -Hydroxybenzyl) -4-hydroxyphenyl] methane, bis [3- (3,5-dimethyl-4-hydroxybenzyl) -4- Hydroxy-5-methylphenyl] methane, bis [3- (3,5-dimethyl-4-hydroxybenzyl) -4-hydroxy-5-ethylphenyl] methane, bis [3- (3,5-diethyl-4-) Hydroxybenzyl) -4-hydroxy-5-methylphenyl] methane, bis [3- (3,5-diethyl-4-hydroxybenzyl) -4-hydroxy-5-ethylphenyl] methane, bis [2-hydroxy-3 -(3,5-dimethyl-4-hydroxybenzyl) -5-methylphenyl] methane, bis [2-hydroxy-3- (2-hydroxy-5-methylbenzyl) -5-methylphenyl] methane, bis [4 -Hydroxy-3- (2-hydroxy-5-methylbenzyl) -5-methylphenyl] methane and bis [2,5-dimethyl-3- (2- Linear type tetranuclear phenol compounds such as droxy-5-methylbenzyl) -4-hydroxyphenyl] methane; 2,4-bis [2-hydroxy-3- (4-hydroxybenzyl) -5-methylbenzyl] -6 -Cyclohexylphenol, 2,4-bis [4-hydroxy-3- (4-hydroxybenzyl) -5-methylbenzyl] -6-cyclohexylphenol, and 2,6-bis [2,5-dimethyl-3- ( 2-hydroxy-5-methylbenzyl) -4-hydroxybenzyl] -4-polyphenols such as linear polyphenol compounds such as 5-nuclear phenol compounds; 1- [1- (4-hydroxyphenyl) isopropyl]- 4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, and 1- [1- (3-methyl-4) Polynuclear branched compounds such as hydroxyphenyl) isopropyl] -4- [1,1-bis (3-methyl-4-hydroxyphenyl) ethyl] benzene; phenols such as phenol, m-cresol, p-cresol or xylenol Examples thereof include 2-12 nuclei of formalin condensate. Of course, it is not limited to these.
The acid dissociable, dissolution inhibiting group is not particularly limited, and examples thereof include those described above.

As the component (A), one type may be used alone, or two or more types may be used in combination.
In the first positive resist composition, the content of the component (A) may be adjusted according to the resist film thickness to be formed.

[Component (B)]
The component (B) is not particularly limited, and those that have been proposed as acid generators for chemically amplified resists can be used. Examples of such acid generators include onium salt acid generators such as iodonium salts and sulfonium salts, oxime sulfonate acid generators, bisalkyl or bisarylsulfonyldiazomethanes, poly (bissulfonyl) diazomethanes, and the like. There are various known diazomethane acid generators, nitrobenzyl sulfonate acid generators, imino sulfonate acid generators, disulfone acid generators, and the like.
As the onium salt acid generator, for example, a compound represented by the following general formula (b-1) or (b-2) can be used.

［式中、Ｒ^１”〜Ｒ^３”，Ｒ^５”〜Ｒ^６”は、それぞれ独立に、置換基を有していてもよいアリール基またはアルキル基を表し；式（ｂ−１）におけるＲ^１”〜Ｒ^３”のうち、いずれか２つが相互に結合して式中のイオウ原子と共に環を形成してもよく；Ｒ^４”は、置換基を有していてもよいアルキル基、ハロゲン化アルキル基、アリール基またはアルケニル基を表し；Ｒ^１”〜Ｒ^３”のうち少なくとも１つはアリール基を表し、Ｒ^５”〜Ｒ^６”のうち少なくとも１つはアリール基を表す。］

[Wherein, R ¹ ″ to R ³ ″ and R ⁵ ″ to R ⁶ ″ each independently represents an aryl group or an alkyl group which may have a substituent; R in the formula (b-1) Any one of ¹ ″ to R ³ ″ may be bonded to each other to form a ring together with the sulfur atom in the formula; R ⁴ ″ represents an alkyl group which may have a substituent, a halogen atom; An alkyl group, an aryl group or an alkenyl group; at least one of R ¹ ″ to R ³ ″ represents an aryl group and at least one of R ⁵ ″ to R ⁶ ″ represents an aryl group.]

In formula (b-1), R ¹ ″ to R ³ ″ each independently represents an aryl group or an alkyl group which may have a substituent. In addition, any two of R ¹ ″ to R ³ ″ in formula (b-1) may be bonded to each other to form a ring together with the sulfur atom in the formula.
Further, at least one of R ¹ ″ to R ³ ″ represents an aryl group. Of R ¹ ″ to R ³ ″, two or more are preferably aryl groups, and most preferably all R ¹ ″ to R ³ ″ are aryl groups.

The aryl group for R ¹ ″ to R ³ ″ is not particularly limited, and examples thereof include an aryl group having 6 to 20 carbon atoms. The aryl group is preferably an aryl group having 6 to 10 carbon atoms because it can be synthesized at a low cost. Specific examples include a phenyl group and a naphthyl group.
The aryl group may have a substituent. “Having a substituent” means that part or all of the hydrogen atoms of the aryl group are substituted with a substituent, and examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a hydroxyl group, An alkoxyalkyloxy group, —O—R ⁵⁰ —C (═O) — (O) _{n ″} —R ⁵¹ [wherein R ⁵⁰ represents an alkylene group or a single bond, and R ⁵¹ represents an acid-dissociable group or an acid-free group. It is a dissociable group, and n ″ is 0 or 1. ] Etc. are mentioned.
The alkyl group that may be substituted for the hydrogen atom of the aryl group is preferably an alkyl group having 1 to 5 carbon atoms, and is a methyl group, an ethyl group, a propyl group, an n-butyl group, or a tert-butyl group. Is most preferred.
As the alkoxy group that may be substituted for the hydrogen atom of the aryl group, an alkoxy group having 1 to 5 carbon atoms is preferable, and a methoxy group, an ethoxy group, an n-propoxy group, an iso-propoxy group, an n-butoxy group, A tert-butoxy group is preferable, and a methoxy group and an ethoxy group are most preferable.
The halogen atom that may be substituted with the hydrogen atom of the aryl group is preferably a fluorine atom.

As the alkoxyalkyloxy group in which the hydrogen atom of the aryl group may be substituted, for example, —O—C (R ⁴⁷ ) (R ⁴⁸ ) —O—R ^{49 wherein} R ⁴⁷ and R ⁴⁸ are each It is independently a hydrogen atom or a linear or branched alkyl group, R ⁴⁹ is an alkyl group, and R ⁴⁸ and R ⁴⁹ may be bonded to each other to form one ring structure. However, at least one of R ⁴⁷ and R ⁴⁸ is a hydrogen atom. ].
In R ⁴⁷ and R ⁴⁸ , the alkyl group preferably has 1 to 5 carbon atoms, preferably an ethyl group or a methyl group, and most preferably a methyl group.
One of R ⁴⁷ and R ⁴⁸ is preferably a hydrogen atom, the other is preferably a hydrogen atom or a methyl group, and both R ⁴⁷ and R ⁴⁸ are particularly preferably hydrogen atoms.
The alkyl group for R ⁴⁹ preferably has 1 to 15 carbon atoms and may be linear, branched or cyclic.
The linear or branched alkyl group for R ⁴⁹ preferably has 1 to 5 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an n-butyl group, and a tert-butyl group. Can be mentioned.
The cyclic alkyl group for R ⁴⁹ preferably has 4 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and most preferably 5 to 10 carbon atoms.
Specifically, a monocycloalkane, bicycloalkane, tricycloalkane, tetracycloalkane, etc., which may or may not be substituted with an alkyl group having 1 to 5 carbon atoms, a fluorine atom or a fluorinated alkyl group, etc. And a group obtained by removing one or more hydrogen atoms from the polycycloalkane. Examples of the monocycloalkane include cyclopentane and cyclohexane. Examples of the polycycloalkane include adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. Among them, a group obtained by removing one or more hydrogen atoms from adamantane is preferable.
R ⁴⁸ and R ⁴⁹ may be bonded to each other to form one ring structure. In this case, a cyclic group is formed by R ⁴⁸ , R ⁴⁹ , the oxygen atom to which R ⁴⁹ is bonded, and the carbon atom to which the oxygen atom and R ⁴⁸ are bonded. The cyclic group is preferably a 4- to 7-membered ring, and more preferably a 4- to 6-membered ring.

In the “—O—R ⁵⁰ —C (═O) — (O) _{n ″} —R ⁵¹ ” in which the hydrogen atom of the aryl group may be substituted, the alkylene group in R ⁵⁰ is linear or branched. The alkylene group is preferably 1 to 5 carbon atoms. Examples of the alkylene group include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, and a 1,1-dimethylethylene group.
The acid dissociable group in R ⁵¹ is not particularly limited as long as it is an organic group that can be dissociated by the action of an acid (an acid generated from the component (B) at the time of exposure). Examples include the same acid dissociable, dissolution inhibiting groups. Among them, the tertiary alkyl ester type is preferable.
Preferred examples of the acid non-dissociable group for R ⁵¹ include a decyl group, a tricyclodecyl group, an adamantyl group, a 1- (1-adamantyl) methyl group, a tetracyclododecyl group, an isobornyl group, and a norbornyl group.

The alkyl group for R 1 ^{"~R 3",} is not particularly limited, for example, linear C1-10, branched or cyclic alkyl group, and the like. It is preferable that it is C1-C5 from the point which is excellent in resolution. Specific examples include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an n-pentyl group, a cyclopentyl group, a hexyl group, a cyclohexyl group, a nonyl group, and a decyl group. A methyl group is preferable because it is excellent in resolution and can be synthesized at low cost.
The alkyl group may have a substituent. “Having a substituent” means that part or all of the hydrogen atoms of the alkyl group are substituted with a substituent, and the substituent may be a substituent that the aryl group may have. The thing similar to what was mentioned as a group is mentioned.

In formula (b-1), any two of R ¹ ″ to R ³ ″ may be bonded to each other to form a ring together with the sulfur atom in the formula. The ring may be saturated or unsaturated.
The ring may be monocyclic or polycyclic. For example, when one or both of the two forming a ring is a cyclic group (cyclic alkyl group or aryl group), a polycyclic ring (fused ring) is formed when they are combined.
When two of R ¹ ″ to R ³ ″ are combined to form a ring, one ring containing a sulfur atom in the ring skeleton in the formula is a 3 to 10 membered ring including the sulfur atom. Of these, a 5- to 7-membered ring is particularly preferable.
Specific examples of the ring formed by combining two of R ¹ ″ to R ³ ″ include benzothiophene, dibenzothiophene, 9H-thioxanthene, thioxanthone, thianthrene, phenoxathiin, tetrahydrothiophenium, tetrahydro Examples include thiopyranium.
When any two of R ¹ ″ to R ³ ″ are bonded to each other to form a ring together with the sulfur atom in the formula, the remaining one is preferably an aryl group.

Of the cation moiety of the compound represented by formula (b-1), when R ¹ ″ to R ³ ″ are all phenyl groups that may have a substituent, that is, the cation moiety is triphenylsulfonium. Preferable specific examples in the case of having a skeleton include, for example, cation moieties represented by the following formulas (I-1-1) to (I-1-14).

  Moreover, what substituted a part or all of the phenyl group in these cation parts with the naphthyl group which may have a substituent is mentioned as a preferable thing. Of the three phenyl groups, 1 or 2 is preferably substituted with the naphthyl group.

Moreover, among the cation part of the compound represented by the formula (b-1), any two of R ¹ ″ to R ³ ″ are bonded to each other to form a ring together with the sulfur atom in the formula. Preferable specific examples of the case include, for example, cation moieties represented by the following formulas (I-11-10) to (I-11-13).

［式中、Ｒ^９は、置換基を有していてもよいフェニル基、置換基を有していてもよいナフチル基または炭素数１〜５のアルキル基であり、Ｒ^１０は、置換基を有していてもよいフェニル基、置換基を有していてもよいナフチル基、炭素数１〜５のアルキル基、炭素数１〜５のアルコキシ基または水酸基であり、ｕは１〜３の整数である。］

[Wherein, R ⁹ is a phenyl group which may have a substituent, a naphthyl group which may have a substituent or an alkyl group having 1 to 5 carbon atoms, and R ¹⁰ represents a substituent. A phenyl group which may have, a naphthyl group which may have a substituent, an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms or a hydroxyl group, u is an integer of 1 to 3 It is. ]

［式中、Ｚ^４は単結合、メチレン基、硫黄原子、酸素原子、窒素原子、カルボニル基、−ＳＯ−、−ＳＯ_２−、−ＳＯ_３−、−ＣＯＯ−、−ＣＯＮＨ−または−Ｎ（Ｒ_Ｎ）−（該Ｒ_Ｎは炭素数１〜５のアルキル基である。）であり；Ｒ^８１、Ｒ^８３〜Ｒ^８６はそれぞれ独立してアルキル基、アセチル基、アルコキシ基、カルボキシ基、水酸基またはヒドロキシアルキル基であり；ｎ_１〜ｎ_５はそれぞれ独立して０〜３の整数であり、ｎ_６は０〜２の整数である。］

[In the formula, Z ⁴ represents a single bond, a methylene group, a sulfur atom, an oxygen atom, a nitrogen atom, a carbonyl group, —SO—, —SO ₂ —, —SO ₃ —, —COO—, —CONH— or —N ( R _N ) — (wherein R _N is an alkyl group having 1 to 5 carbon atoms); R ⁸¹ and R ^{83 to} R ⁸⁶ are each independently an alkyl group, an acetyl group, an alkoxy group, a carboxy group, or a hydroxyl group. Or a hydroxyalkyl group; n _{1 to} n ₅ are each independently an integer of 0 to 3, and n ₆ is an integer of 0 to 2. ]

In the formulas (I-11-10) to (I-11-11), in R ^{9 to} R ¹⁰ , the substituent that the phenyl group or naphthyl group may have may be represented by R ¹ ″ to R ³ ″. The thing similar to what was mentioned as a substituent which an aryl group may have is mentioned. As the substituent that the alkyl group have the ^{R 9 ~R 10, R 1 "} ~R 3" are the same as those of the substituent which may be alkyl groups have in the Can be mentioned.
u is an integer of 1 to 3, and 1 or 2 is most preferable.
In formulas (I-11-12) to (I-11-13), in R ⁸¹ and R ^{83 to} R ⁸⁶ , the alkyl group is preferably an alkyl group having 1 to 5 carbon atoms, and in particular, linear or branched The alkyl group is more preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, or a tert-butyl group.
The alkoxy group is preferably an alkoxy group having 1 to 5 carbon atoms, more preferably a linear or branched alkoxy group, and particularly preferably a methoxy group or an ethoxy group.
The hydroxyalkyl group is preferably a group in which one or more hydrogen atoms in the alkyl group are substituted with a hydroxy group, and examples thereof include a hydroxymethyl group, a hydroxyethyl group, and a hydroxypropyl group.
When the symbols n _{1 to} n ₆ attached to R ⁸¹ and R ^{83 to} R ⁸⁶ are integers of 2 or more, the plurality of R ⁸¹ and R ^{83 to} R ⁸⁶ may be the same or different. Good.
n ₁ is preferably 0 to 2, more preferably 0 or 1, and still more preferably 0.
n ₂ and n ₃ are preferably each independently 0 or 1, more preferably 0.
n ₄ is preferably 0 to 2, more preferably 0 or 1.
n ₅ is preferably 0 or 1, more preferably 0.
n ₆ is preferably 0 or 1, more preferably 1.

In formulas (b-1) to (b-2), R ⁴ ″ represents an alkyl group, a halogenated alkyl group, an aryl group, or an alkenyl group which may have a substituent.
The alkyl group for R ⁴ ″ may be linear, branched or cyclic.
The linear or branched alkyl group preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and most preferably 1 to 4 carbon atoms.
The cyclic alkyl group preferably has 4 to 15 carbon atoms, more preferably 4 to 10 carbon atoms, and most preferably 6 to 10 carbon atoms.
Examples of the halogenated alkyl group for R ⁴ ″ include groups in which part or all of the hydrogen atoms of the linear, branched, or cyclic alkyl group have been substituted with halogen atoms. A fluorine atom, a chlorine atom, a bromine atom, an iodine atom, etc. are mentioned, A fluorine atom is preferable.
In the halogenated alkyl group, the ratio of the number of halogen atoms to the total number of halogen atoms and hydrogen atoms contained in the halogenated alkyl group (halogenation rate (%)) is preferably 10 to 100%. 50 to 100% is preferable, and 100% is most preferable. The higher the halogenation rate, the better the acid strength.
The aryl group for R ⁴ ″ is preferably an aryl group having 6 to 20 carbon atoms.
The alkenyl group in R ⁴ ″ is preferably an alkenyl group having 2 to 10 carbon atoms.
In the above R ⁴ ″, “may have a substituent” means one of hydrogen atoms in the linear, branched or cyclic alkyl group, halogenated alkyl group, aryl group, or alkenyl group. It means that part or all may be substituted with a substituent (an atom or group other than a hydrogen atom).
The number of substituents in R ⁴ ″ may be one or two or more.

Examples of the substituent include a halogen atom, a hetero atom, an alkyl group, a formula: R ^X -Q ^5- [where Q ⁵ is a divalent linking group containing an oxygen atom, and R ^X represents a substituent. It is a C3-C30 hydrocarbon group which may have. ] Etc. which are represented by these.
Examples of the halogen atom and alkyl group include the same groups as those described above for R ⁴ ″ as the halogen atom and alkyl group in the halogenated alkyl group.
Examples of the hetero atom include an oxygen atom, a nitrogen atom, and a sulfur atom.

In the group represented by R ^X —Q ⁵ —, Q ⁵ is a divalent linking group containing an oxygen atom.
Q ⁵ may contain atoms other than oxygen atoms. Examples of atoms other than oxygen atoms include carbon atoms, hydrogen atoms, oxygen atoms, sulfur atoms, and nitrogen atoms.
Examples of the divalent linking group containing an oxygen atom include an oxygen atom (ether bond; —O—), an ester bond (—C (═O) —O—), and an amide bond (—C (═O) —NH. -), A carbonyl group (-C (= O)-), a non-hydrocarbon oxygen atom-containing linking group such as a carbonate bond (-O-C (= O) -O-); the non-hydrocarbon oxygen atom Examples include a combination of a containing linking group and an alkylene group.
Examples of the combination include —R ⁹¹ —O—, —R ⁹² —O—C (═O) —, —C (═O) —O—R ⁹³ —, —C (═O) —O—R. ⁹³ —O—C (═O) — (wherein R ^{91 to} R ⁹³ are each independently an alkylene group).
The alkylene group for R ^{91 to} R ⁹³ is preferably a linear or branched alkylene group, and the alkylene group preferably has 1 to 12 carbon atoms, more preferably 1 to 5 carbon atoms, and particularly preferably 1 to 3 carbon atoms. preferable.
Specific examples of the alkylene group include a methylene group [—CH ₂ —]; —CH (CH ₃ ) —, —CH (CH ₂ CH ₃ ) —, —C (CH ₃ ) ₂ —, —C ( _{CH 3) (CH 2 CH 3} ) -, - C (CH 3) (CH 2 CH 2 CH 3) -, - C (CH 2 CH 3) 2 - ; alkylethylene groups such as ethylene group _[-CH 2 CH _2— ]; —CH (CH ₃ ) CH ₂ —, —CH (CH ₃ ) CH (CH ₃ ) —, —C (CH ₃ ) ₂ CH ₂ —, —CH (CH ₂ CH ₃ ) CH ₂ —, Alkylethylene groups such as —CH (CH ₂ CH ₃ ) CH ₂ —; trimethylene group (n-propylene group) [—CH ₂ CH ₂ CH ₂ —]; —CH (CH ₃ ) CH ₂ CH ₂ —, —CH _{2 CH (CH 3) CH 2} - alkyl trimethylene group and the like; Toramechiren group _{[-CH 2 CH 2 CH 2 CH} 2 -]; - CH (CH 3) CH 2 CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 CH 2 - alkyl tetramethylene group and the like; penta And methylene group [—CH ₂ CH ₂ CH ₂ CH ₂ CH ₂ —] and the like.
Q ⁵ is preferably a divalent linking group containing an ester bond or an ether bond, and among them, —R ⁹¹ —O—, —R ⁹² —O—C (═O) —, —C (═O) — O—, —C (═O) —O—R ⁹³ — or —C (═O) —O—R ⁹³ —O—C (═O) — is preferred.

In the group represented by R ^X -Q ^5- , the hydrocarbon group of R ^X may be an aromatic hydrocarbon group or an aliphatic hydrocarbon group.
The aromatic hydrocarbon group is a hydrocarbon group having an aromatic ring. The aromatic hydrocarbon group preferably has 3 to 30 carbon atoms, more preferably 5 to 30, more preferably 5 to 20, still more preferably 6 to 15, and most preferably 6 to 12. However, the carbon number does not include the carbon number in the substituent.
Specific examples of the aromatic hydrocarbon group include a hydrogen atom from an aromatic hydrocarbon ring such as a phenyl group, a biphenyl group, a fluorenyl group, a naphthyl group, an anthryl group, and a phenanthryl group. Aryl groups such as aryl group, benzyl group, phenethyl group, 1-naphthylmethyl group, 2-naphthylmethyl group, 1-naphthylethyl group, 2-naphthylethyl group, etc., from which one is removed. The number of carbon atoms in the alkyl chain in the arylalkyl group is preferably 1 to 4, more preferably 1 to 2, and particularly preferably 1.
The aromatic hydrocarbon group may have a substituent. For example, a part of carbon atoms constituting the aromatic ring of the aromatic hydrocarbon group may be substituted with a hetero atom, and the hydrogen atom bonded to the aromatic ring of the aromatic hydrocarbon group is substituted with the substituent. May be.
Examples of the former include heteroaryl groups in which some of the carbon atoms constituting the ring of the aryl group are substituted with heteroatoms such as oxygen atoms, sulfur atoms, nitrogen atoms, and aromatic hydrocarbons in the arylalkyl groups. Examples include heteroarylalkyl groups in which some of the carbon atoms constituting the ring are substituted with the above heteroatoms.
Examples of the substituent of the aromatic hydrocarbon group in the latter example include an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a hydroxyl group, and an oxygen atom (═O).
The alkyl group as a substituent of the aromatic hydrocarbon group is preferably an alkyl group having 1 to 5 carbon atoms, and most preferably a methyl group, an ethyl group, a propyl group, an n-butyl group, or a tert-butyl group. preferable.
The alkoxy group as a substituent of the aromatic hydrocarbon group is preferably an alkoxy group having 1 to 5 carbon atoms, and is a methoxy group, ethoxy group, n-propoxy group, iso-propoxy group, n-butoxy group, tert- A butoxy group is preferable, and a methoxy group and an ethoxy group are most preferable.
Examples of the halogen atom as a substituent for the aromatic hydrocarbon group include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
Examples of the halogenated alkyl group as the substituent of the aromatic hydrocarbon group include groups in which part or all of the hydrogen atoms of the alkyl group have been substituted with the halogen atoms.

The aliphatic hydrocarbon group for R ^X may be a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group. The aliphatic hydrocarbon group may be linear, branched or cyclic.
In R ^X , the aliphatic hydrocarbon group may be a group in which a part of carbon atoms constituting the aliphatic hydrocarbon group may be substituted with a substituent containing a hetero atom, and hydrogen constituting the aliphatic hydrocarbon group A part or all of the atoms may be substituted with a substituent containing a hetero atom.
The “heteroatom” in R ^X is not particularly limited as long as it is an atom other than a carbon atom and a hydrogen atom, and examples thereof include a halogen atom, an oxygen atom, a sulfur atom, and a nitrogen atom. Examples of the halogen atom include a fluorine atom, a chlorine atom, an iodine atom, and a bromine atom.
The “substituent containing a heteroatom” (hereinafter sometimes referred to as a heteroatom-containing substituent) may be composed of only the heteroatom, or may be a group containing a group other than the heteroatom or an atom. May be.

Examples of the hetero atom-containing substituent that may substitute a part of carbon atoms constituting the aliphatic hydrocarbon group include —O—, —C (═O) —O—, —C (═O) —. , —O—C (═O) —O—, —C (═O) —NH—, —NH— (H may be substituted with a substituent such as an alkyl group or an acyl group), —S. -, -S (= O) _2- , -S (= O) _2- O- and the like. In the case of -NH-, the substituent (alkyl group, acyl group, etc.) that may substitute for H preferably has 1 to 10 carbon atoms, and more preferably 1 to 8 carbon atoms. Particularly preferably, it has 1 to 5 carbon atoms.
When the aliphatic hydrocarbon group is cyclic, these substituents may be included in the ring structure.

Examples of the hetero atom-containing substituent that may substitute part or all of the hydrogen atoms constituting the aliphatic hydrocarbon group include a halogen atom, an alkoxy group, a hydroxyl group, —C (═O) —R ⁸⁰ [ R ⁸⁰ is an alkyl group. ], -COOR ⁷⁹ [R ⁷⁹ is a hydrogen atom or an alkyl group. ], Halogenated alkyl groups, halogenated alkoxy groups, amino groups, amide groups, nitro groups, oxygen atoms (= O), sulfur atoms, sulfonyl groups (SO ₂ ) and the like.
Examples of the halogen atom as the heteroatom-containing substituent include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
The alkyl group in the alkoxy group as the heteroatom-containing substituent may be linear, branched or cyclic, or a combination thereof. The carbon number is preferably 1-30. When the alkyl group is linear or branched, the carbon number is preferably 1-20, more preferably 1-17, still more preferably 1-15, 10 is particularly preferred. Specific examples thereof include those similar to the specific examples of the linear or branched saturated hydrocarbon group exemplified below. When the alkyl group is cyclic (when it is a cycloalkyl group), the carbon number is preferably 3 to 30, more preferably 3 to 20, still more preferably 3 to 15, and 4 to 12 carbon atoms. It is particularly preferred that the number of carbon atoms is 5-10. The alkyl group may be monocyclic or polycyclic. Specific examples include groups in which one or more hydrogen atoms have been removed from monocycloalkane, groups in which one or more hydrogen atoms have been removed from polycycloalkanes such as bicycloalkane, tricycloalkane, and tetracycloalkane. . Specific examples of the monocycloalkane include cyclopentane and cyclohexane. Specific examples of the polycycloalkane include adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. In these cycloalkyl groups, some or all of the hydrogen atoms bonded to the ring may or may not be substituted with a substituent such as a fluorine atom or a fluorinated alkyl group.
In —C (═O) —R ⁸⁰ and —COOR ⁷⁹ as the hetero atom-containing substituent, the alkyl group in R ⁸⁰ and R ⁷⁹ is the same as the alkyl group ^{exemplified as} the alkyl group in the alkoxy group. Can be mentioned.
Examples of the alkyl group in the halogenated alkyl group as the heteroatom-containing substituent include the same alkyl groups as mentioned for the alkyl group in the alkoxy group. As the halogenated alkyl group, a fluorinated alkyl group is particularly preferred.
Examples of the halogenated alkoxy group as the heteroatom-containing substituent include groups in which some or all of the hydrogen atoms of the alkoxy group have been substituted with the halogen atoms. The halogenated alkoxy group is preferably a fluorinated alkoxy group.
Examples of the hydroxyalkyl group as the heteroatom-containing substituent include groups in which at least one hydrogen atom of the alkyl group mentioned as the alkyl group in the alkoxy group is substituted with a hydroxyl group. The number of hydroxyl groups that the hydroxyalkyl group has is preferably 1 to 3, and most preferably 1.

Examples of the aliphatic hydrocarbon group include a linear or branched saturated hydrocarbon group, a linear or branched monovalent unsaturated hydrocarbon group, or a cyclic aliphatic hydrocarbon group (aliphatic ring). Formula group) is preferred.
The linear saturated hydrocarbon group (alkyl group) preferably has 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, and most preferably 1 to 10 carbon atoms. Specifically, for example, methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group, isotridecyl group, tetradecyl group Group, pentadecyl group, hexadecyl group, isohexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, icosyl group, heicosyl group, docosyl group and the like.
The branched saturated hydrocarbon group (alkyl group) preferably has 3 to 20 carbon atoms, more preferably 3 to 15 carbon atoms, and most preferably 3 to 10 carbon atoms. Specifically, for example, 1-methylethyl group, 1-methylpropyl group, 2-methylpropyl group, 1-methylbutyl group, 2-methylbutyl group, 3-methylbutyl group, 1-ethylbutyl group, 2-ethylbutyl group, Examples include 1-methylpentyl group, 2-methylpentyl group, 3-methylpentyl group, 4-methylpentyl group and the like.
As an unsaturated hydrocarbon group, it is preferable that carbon number is 2-10, 2-5 are preferable, 2-4 are preferable, and 3 is especially preferable. Examples of the linear monovalent unsaturated hydrocarbon group include a vinyl group, a propenyl group (allyl group), and a butynyl group. Examples of the branched monovalent unsaturated hydrocarbon group include a 1-methylpropenyl group and a 2-methylpropenyl group. As the unsaturated hydrocarbon group, a propenyl group is particularly preferable.

The aliphatic cyclic group may be a monocyclic group or a polycyclic group. The number of carbon atoms is preferably 3 to 30, more preferably 5 to 30, further preferably 5 to 20, particularly preferably 6 to 15, and most preferably 6 to 12.
Specifically, for example, a group in which one or more hydrogen atoms are removed from a monocycloalkane; a group in which one or more hydrogen atoms are removed from a polycycloalkane such as bicycloalkane, tricycloalkane, tetracycloalkane, etc. Can be mentioned. More specifically, a group in which one or more hydrogen atoms have been removed from a monocycloalkane such as cyclopentane or cyclohexane; one or more polycycloalkanes such as adamantane, norbornane, isobornane, tricyclodecane, or tetracyclododecane. Examples include a group excluding a hydrogen atom.
When the aliphatic cyclic group does not contain a substituent containing a hetero atom in the ring structure, the aliphatic cyclic group is preferably a polycyclic group, and has one or more hydrogen atoms from the polycycloalkane. Excluded groups are preferred, and most preferred are groups in which one or more hydrogen atoms have been removed from adamantane.
When the aliphatic cyclic group includes a substituent containing a hetero atom in the ring structure, examples of the substituent containing a hetero atom include —O—, —C (═O) —O—, —S—. , —S (═O) ₂ — and —S (═O) ₂ —O— are preferable. Specific examples of the aliphatic cyclic group include groups represented by the following formulas (L1) to (L5) and (S1) to (S4).

［式中、Ｑ”は、酸素原子もしくは硫黄原子を含んでいてもよいアルキレン基、酸素原子または硫黄原子であり、ｍは０または１の整数である。］

[Wherein Q ″ is an alkylene group, an oxygen atom or a sulfur atom which may contain an oxygen atom or a sulfur atom, and m is an integer of 0 or 1.]

In the formula, the alkylene group in Q ″ is preferably linear or branched, and preferably has 1 to 5 carbon atoms. Specifically, a methylene group [—CH ₂ —]; —CH ( _{CH 3) -, - CH (} CH 2 CH 3) -, - C (CH 3) 2 -, - C (CH 3) (CH 2 CH 3) -, - C (CH 3) (CH 2 CH 2 CH ₃ )-, an alkylmethylene group such as —C (CH ₂ CH ₃ ) ₂ —; an ethylene group [—CH ₂ CH ₂ —]; —CH (CH ₃ ) CH ₂ —, —CH (CH ₃ ) CH (CH _{3) -, - C (CH} 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 - alkyl groups such as, trimethylene group (n- propylene _{group) [- CH 2 CH 2 CH} 2 -] _{; -CH (CH 3) CH 2} CH 2 -, - CH 2 CH (CH 3 Tetramethylene group _{[-CH 2 CH 2 CH 2 CH} 2 -];; - CH 2 alkyltetramethylene groups such as _{- CH (CH 3) CH 2} CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 - CH ₂ such alkyl tetramethylene group;. a pentamethylene group _{[-CH 2 CH 2 CH 2 CH} 2 CH 2 -] , and the like among these, a methylene group or an alkylmethylene group is preferably a methylene group, -CH (CH ₃ ) — or —C (CH ₃ ) ₂ — is particularly preferred.
The alkylene group may contain an oxygen atom (—O—) or a sulfur atom (—S—). Specific examples thereof include groups in which —O— or —S— is interposed between the terminal or carbon atoms of the alkylene group, and examples thereof include —O—R ⁹⁴ —, —S—R ⁹⁵ —, and —R ⁹⁶ —. O-R ^{<97 >} -, -R < ^{98 >} -S-R ^<99> -etc. are mentioned. Here, R ^{94 to} R ⁹⁹ are each independently an alkylene group. Examples of the alkylene group include the same alkylene groups exemplified as the alkylene group for Q "Among _{them, -O-CH 2 -.,} - CH 2 -O-CH 2 -, - S-CH 2 - , —CH ₂ —S—CH ₂ — and the like are preferable.

In these aliphatic cyclic groups, some or all of the hydrogen atoms may be substituted with substituents. Examples of the substituent include an alkyl group, a halogen atom, an alkoxy group, a hydroxyl group, —C (═O) —R ⁸⁰ [R ⁸⁰ is an alkyl group. ], -COOR ⁷⁹ [R ⁷⁹ is a hydrogen atom or an alkyl group. ], Halogenated alkyl groups, halogenated alkoxy groups, amino groups, amide groups, nitro groups, oxygen atoms (= O), sulfur atoms, sulfonyl groups (SO ₂ ) and the like.
Examples of the alkyl group as the substituent include the same alkyl groups as those described above for the alkoxy group as the heteroatom-containing substituent.
As the alkyl group, an alkyl group having 1 to 6 carbon atoms is particularly preferable. The alkyl group is preferably linear or branched, and specifically includes a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, Examples include pentyl group, isopentyl group, neopentyl group, hexyl group and the like. Among these, a methyl group or an ethyl group is preferable, and a methyl group is particularly preferable.
The halogen atom, alkoxy group, —C (═O) —R ⁸⁰ , —COOR ⁷⁹ , halogenated alkyl group, and halogenated alkoxy group as the substituent are each a hydrogen atom constituting the aliphatic hydrocarbon group. The same thing as the thing quoted as the hetero atom containing substituent which may substitute a part or all of is mentioned.
Among the above, the substituent for substituting the hydrogen atom of the aliphatic cyclic group is preferably an alkyl group, an oxygen atom (= O), or a hydroxyl group.
The number of substituents possessed by the aliphatic cyclic group may be one or two or more. When having a plurality of substituents, the plurality of substituents may be the same or different.

R ^X is preferably a cyclic group which may have a substituent. The cyclic group may be an aromatic hydrocarbon group which may have a substituent, an aliphatic cyclic group which may have a substituent, or a substituent. It is preferably an aliphatic cyclic group that may be used.
The aromatic hydrocarbon group is preferably a naphthyl group which may have a substituent or a phenyl group which may have a substituent.
As the aliphatic cyclic group which may have a substituent, a polycyclic aliphatic cyclic group which may have a substituent is preferable. Examples of the polycyclic aliphatic cyclic group include groups obtained by removing one or more hydrogen atoms from the polycycloalkane, groups represented by the above (L2) to (L5) and (S3) to (S4). Etc. are preferred.

In the present invention, R ⁴ ″ preferably has R ^X -Q ^5- as a substituent. In this case, R ⁴ ″ has R ^X -Q ⁵ -Y ^5- [wherein Q ⁵ and R ^X is the same as above, and Y ⁵ is an optionally substituted alkylene group having 1 to 4 carbon atoms or an optionally substituted fluorinated alkylene group having 1 to 4 carbon atoms. . ] Is preferable.
In the group represented by R ^X —Q ⁵ —Y ⁵ —, the alkylene group for Y ⁵ includes the same alkylene groups as those described above for Q ⁵ having 1 to 4 carbon atoms.
Examples of the fluorinated alkylene group include groups in which part or all of the hydrogen atoms of the alkylene group have been substituted with fluorine atoms.
As Y ^5, _{specifically, -CF 2 -, - CF 2} CF 2 -, - CF 2 CF 2 CF 2 -, - CF (CF 3) CF 2 -, - CF (CF 2 CF 3) -, _{-C (CF 3) 2 -,} - CF 2 CF 2 CF 2 CF 2 -, - CF (CF 3) CF 2 CF 2 -, - CF 2 CF (CF 3) CF 2 -, - CF (CF 3) CF (CF ₃ ) —, —C (CF ₃ ) ₂ CF ₂ —, —CF (CF ₂ CF ₃ ) CF ₂ —, —CF (CF ₂ CF ₂ CF ₃ ) —, —C (CF ₃ ) (CF _{2 CF 3) -; - CHF} -, - CH 2 CF 2 -, - CH 2 CH 2 CF 2 -, - CH 2 CF 2 CF 2 -, - CH (CF 3) CH 2 -, - CH (CF 2 _{CF 3) -, - C (} CH 3) (CF 3) -, - CH 2 CH 2 CH 2 CF 2 -, - C H ₂ CH ₂ CF ₂ CF ₂ —, —CH (CF ₃ ) CH ₂ CH ₂ —, —CH ₂ CH (CF ₃ ) CH ₂ —, —CH (CF ₃ ) CH (CF ₃ ) —, —C ( _{CF 3) 2 CH 2 -;} - CH 2 -, - CH 2 CH 2 -, - CH 2 CH 2 CH 2 -, - CH (CH 3) CH 2 -, - CH (CH 2 CH 3) -, - _{C (CH 3) 2 -,} - CH 2 CH 2 CH 2 CH 2 -, - CH (CH 3) CH 2 CH 2 -, - CH 2 CH (CH 3) CH 2 -, - CH (CH 3) CH _{(CH 3) -, - C} (CH 3) 2 CH 2 -, - CH (CH 2 CH 3) CH 2 -, - CH (CH 2 CH 2 CH 3) -, - C (CH 3) (CH 2 CH ₃ ) — and the like.

Y ⁵ is preferably a fluorinated alkylene group, and particularly preferably a fluorinated alkylene group in which the carbon atom bonded to the adjacent sulfur atom is fluorinated. Examples of such fluorinated alkylene _{group, -CF 2 -, - CF 2} CF 2 -, - CF 2 CF 2 CF 2 -, - CF (CF 3) CF 2 -, - CF 2 CF 2 CF 2 CF 2 _{-, - CF (CF 3)} CF 2 CF 2 -, - CF 2 CF (CF 3) CF 2 -, - CF (CF 3) CF (CF 3) -, - C (CF 3) 2 CF 2 -, _{-CF (CF 2 CF 3) CF} 2 -; - CH 2 CF 2 -, - CH 2 CH 2 CF 2 -, - CH 2 CF 2 CF 2 -; - CH 2 CH 2 CH 2 CF 2 -, - CH ₂ CH ₂ CF ₂ CF ₂ —, —CH ₂ CF ₂ CF ₂ CF ₂ — and the like can be mentioned.
Of _{these, -CF 2 -, - CF 2} CF 2 -, - CF 2 CF 2 CF 2 -, or _CH 2 _CF 2 CF ₂ - is _{preferable, -CF 2 -, - CF 2} CF 2 - or -CF ₂ CF ₂ CF ₂ - is more preferable, -CF ₂ - is particularly preferred.

The alkylene group or fluorinated alkylene group may have a substituent. An alkylene group or a fluorinated alkylene group has a “substituent” means that part or all of the hydrogen atom or fluorine atom in the alkylene group or fluorinated alkylene group is substituted with an atom or group other than a hydrogen atom and a fluorine atom. Means that
Examples of the substituent that the alkylene group or fluorinated alkylene group may have include an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, and a hydroxyl group.

In formula (b-2), R ⁵ ″ to R ⁶ ″ each independently represents an aryl group or an alkyl group. At least one of R ⁵ ″ to R ⁶ ″ represents an aryl group. It is preferable that all of R ⁵ ″ to R ⁶ ″ are aryl groups.
As the aryl group for R ⁵ ″ to R ⁶ ″, the same as the aryl groups for R ¹ ″ to R ³ ″ can be used.
Examples of the alkyl group for R ⁵ ″ to R ⁶ ″ include the same as the alkyl group for R ¹ ″ to R ³ ″.
Among these, it is most preferable that R ⁵ ″ to R ⁶ ″ are all phenyl groups.
"The, ^{R 4} in the formula (b-1)" ^{R 4} in the In the formula (b-2) include the same as.

  Specific examples of the onium salt acid generators represented by formulas (b-1) and (b-2) include diphenyliodonium trifluoromethanesulfonate or nonafluorobutanesulfonate; bis (4-tert-butylphenyl) iodonium. Trifluoromethane sulfonate or nonafluorobutane sulfonate; triphenylsulfonium trifluoromethane sulfonate, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; tri (4-methylphenyl) sulfonium trifluoromethane sulfonate, its heptafluoropropane sulfonate or its Nonafluorobutanesulfonate; dimethyl (4-hydroxynaphthyl) sulfonium trifluoromethanesulfonate, its heptaful Lopropane sulfonate or its nonafluorobutane sulfonate; trifluoromethane sulfonate of monophenyldimethylsulfonium, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; trifluoromethane sulfonate of diphenyl monomethylsulfonium, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate (4-methylphenyl) diphenylsulfonium trifluoromethanesulfonate, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; (4-methoxyphenyl) diphenylsulfonium trifluoromethanesulfonate, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; Trifluoromethanesulfonate of tri (4-tert-butyl) phenylsulfonium, its heptafluoropropane sulfonate or its nonafluorobutanesulfonate; trifluoromethanesulfonate of diphenyl (1- (4-methoxy) naphthyl) sulfonium, its heptafluoropropane Sulfonate or its nonafluorobutane sulfonate; trifluoromethane sulfonate of di (1-naphthyl) phenylsulfonium, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; 1-phenyltetrahydrothiophenium trifluoromethane sulfonate, its heptafluoropropane sulfonate Or nonafluorobutanesulfonate thereof; 1- (4-methylphenyl) ) Tetrahydrothiophenium trifluoromethanesulfonate, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; 1- (3,5-dimethyl-4-hydroxyphenyl) tetrahydrothiophenium trifluoromethanesulfonate, its heptafluoropropane sulfonate 1- (4-methoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethanesulfonate, its heptafluoropropanesulfonate or its nonafluorobutanesulfonate; 1- (4-ethoxynaphthalene-1- Yl) tetrahydrothiophenium trifluoromethanesulfonate, its heptafluoropropanesulfonate or its nonaflu 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethanesulfonate, its heptafluoropropanesulfonate or its nonafluorobutanesulfonate; 1-phenyltetrahydrothiopyranium trifluoromethanesulfonate , Its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; 1- (4-hydroxyphenyl) tetrahydrothiopyranium trifluoromethane sulfonate, its heptafluoropropane sulfonate or its nonafluorobutane sulfonate; 1- (3,5-dimethyl -4-Hydroxyphenyl) tetrahydrothiopyranium trifluoromethanesulfonate, its heptafluoropropanes Honeto or nonafluorobutanesulfonate; 1- (4-methylphenyl) trifluoromethanesulfonate tetrahydrothiophenium Pila chloride, heptafluoropropane sulfonate or its nonafluorobutane sulfonate, and the like.

  In addition, the anion part of these onium salts is an alkyl sulfonate such as methane sulfonate, n-propane sulfonate, n-butane sulfonate, n-octane sulfonate, 1-adamantane sulfonate, 2-norbornane sulfonate; d-camphor-10-sulfonate, Onium salts substituted with sulfonates such as benzenesulfonate, perfluorobenzenesulfonate, and p-toluenesulfonate can also be used.

  Moreover, the onium salt which replaced the anion part of these onium salts by the anion part represented by either of following formula (b1)-(b8) can also be used.

［式中、ｖ０は０〜３の整数であり、ｑ１〜ｑ２はそれぞれ独立に１〜５の整数であり、ｑ３は１〜１２の整数であり、ｒ１〜ｒ２はそれぞれ独立に０〜３の整数であり、ｉは１〜２０の整数であり、ｔ３は１〜３の整数であり、Ｒ^７は置換基であり、Ｒ^８は水素原子、炭素数１〜５のアルキル基または炭素数１〜５のハロゲン化アルキル基である。］

[Wherein, v0 is an integer of 0 to 3, q1 to q2 are each independently an integer of 1 to 5, q3 is an integer of 1 to 12, and r1 to r2 are each independently 0 to 3] I is an integer of 1 to 20, t3 is an integer of 1 to 3, R ⁷ is a substituent, R ⁸ is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or 1 carbon atom. ˜5 halogenated alkyl groups. ]

［式中、ｔ３、Ｒ^７、Ｑ”はそれぞれ前記と同じであり、ｍ１〜ｍ５はそれぞれ独立に０または１であり、ｖ１〜ｖ５はそれぞれ独立に０〜３の整数であり、ｗ１〜ｗ５はそれぞれ独立に０〜３の整数である。］

[Wherein, t3, R ⁷ and Q ″ are the same as defined above, m1 to m5 are each independently 0 or 1, v1 to v5 are each independently an integer of 0 to 3, w1 to w5 Are each independently an integer of 0 to 3.]

Examples of the substituent for R ⁷ include an alkyl group and a heteroatom-containing substituent. Examples of the alkyl group include the same alkyl groups as those described above as the substituent that the aromatic hydrocarbon group may have in the description of R ^X. In addition, the heteroatom-containing substituent is the same as the heteroatom-containing substituent that may substitute part or all of the hydrogen atoms constituting the aliphatic hydrocarbon group in the description of R ^X. Things.
Code (r1 and r2, w1 to w5) attached to R ⁷ when is an integer of 2 or more, a plurality of the ^{R 7} groups may be the same, respectively, may be different.
Examples of the alkyl group and halogenated alkyl group for R ⁸ include the same alkyl groups and halogenated alkyl groups as those described above for R.
r1 to r2 and w1 to w5 are each preferably an integer of 0 to 2, and more preferably 0 or 1.
v0 to v5 are preferably 0 to 2, and most preferably 0 or 1.
t3 is preferably 1 or 2, and most preferably 1.
q3 is preferably 1 to 5, more preferably 1 to 3, and most preferably 1.

  Moreover, as an onium salt type acid generator, in the said general formula (b-1) or (b-2), an anion part is made into the anion represented by the following general formula (b-3) or (b-4). A substituted onium salt acid generator can also be used (the cation moiety is the same as (b-1) or (b-2)).

［式中、Ｘ”は、少なくとも１つの水素原子がフッ素原子で置換された炭素数２〜６のアルキレン基を表し；Ｙ”、Ｚ”は、それぞれ独立に、少なくとも１つの水素原子がフッ素原子で置換された炭素数１〜１０のアルキル基を表す。］

[Wherein X ″ represents an alkylene group having 2 to 6 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom; Y ″ and Z ″ each independently represent at least one hydrogen atom as a fluorine atom; Represents an alkyl group having 1 to 10 carbon atoms and substituted with

X ″ is a linear or branched alkylene group in which at least one hydrogen atom is substituted with a fluorine atom, and the alkylene group has 2 to 6 carbon atoms, preferably 3 to 5 carbon atoms, Most preferably, it has 3 carbon atoms.
Y ″ and Z ″ are each independently a linear or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and the alkyl group has 1 to 10 carbon atoms, preferably Has 1 to 7 carbon atoms, more preferably 1 to 3 carbon atoms.
The carbon number of the alkylene group of X ″ or the carbon number of the alkyl group of Y ″ and Z ″ is preferably as small as possible because the solubility in the resist solvent is good within the above carbon number range.
In addition, in the alkylene group of X ″ or the alkyl group of Y ″ and Z ″, as the number of hydrogen atoms substituted with fluorine atoms increases, the strength of the acid increases, and high-energy light or electron beam of 200 nm or less This is preferable because the transparency to the surface is improved.
The proportion of fluorine atoms in the alkylene group or alkyl group, that is, the fluorination rate is preferably 70 to 100%, more preferably 90 to 100%, and most preferably all hydrogen atoms are substituted with fluorine atoms. A perfluoroalkylene group or a perfluoroalkyl group.

In the general formula (b-1) or (b-2), the anion moiety (R ⁴ ″ SO ₃ ⁻ ) is R ⁷ ″ -COO ⁻ [wherein R ⁷ ″ is an alkyl group or a fluorinated alkyl group. An onium salt-based acid generator replaced with a cation group can be used (the cation moiety is the same as (b-1) or (b-2)).
Examples of R ⁷ ″ include the same as R ⁴ ″ described above.
Specific examples of the “R ⁷ ″ —COO ⁻ ” include trifluoroacetate ion, acetate ion, 1-adamantanecarboxylate ion and the like.

  In this specification, the oxime sulfonate acid generator is a compound having at least one group represented by the following general formula (B-1), and has a property of generating an acid upon irradiation with radiation. is there. Such oxime sulfonate-based acid generators are frequently used for chemically amplified resist compositions, and can be arbitrarily selected and used.

（式（Ｂ−１）中、Ｒ^３１、Ｒ^３２はそれぞれ独立に有機基を表す。）

(In formula (B-1), R ³¹ and R ³² each independently represents an organic group.)

The organic groups of R ³¹ and R ³² are groups containing carbon atoms, and atoms other than carbon atoms (for example, hydrogen atoms, oxygen atoms, nitrogen atoms, sulfur atoms, halogen atoms (fluorine atoms, chlorine atoms, etc.), etc.) You may have.
As the organic group for R ^31, a linear, branched, or cyclic alkyl group or aryl group is preferable. These alkyl groups and aryl groups may have a substituent. There is no restriction | limiting in particular as this substituent, For example, a fluorine atom, a C1-C6 linear, branched or cyclic alkyl group etc. are mentioned. Here, “having a substituent” means that part or all of the hydrogen atoms of the alkyl group or aryl group are substituted with a substituent.
As an alkyl group, C1-C20 is preferable, C1-C10 is more preferable, C1-C8 is more preferable, C1-C6 is especially preferable, and C1-C4 is the most preferable. As the alkyl group, a partially or completely halogenated alkyl group (hereinafter sometimes referred to as a halogenated alkyl group) is particularly preferable. The partially halogenated alkyl group means an alkyl group in which a part of hydrogen atoms is substituted with a halogen atom, and the fully halogenated alkyl group means that all of the hydrogen atoms are halogen atoms. Means an alkyl group substituted with Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is particularly preferable. That is, the halogenated alkyl group is preferably a fluorinated alkyl group.
The aryl group preferably has 4 to 20 carbon atoms, more preferably 4 to 10 carbon atoms, and most preferably 6 to 10 carbon atoms. As the aryl group, a partially or completely halogenated aryl group is particularly preferable. The partially halogenated aryl group means an aryl group in which a part of hydrogen atoms is substituted with a halogen atom, and the fully halogenated aryl group means that all of the hydrogen atoms are halogen atoms. Means an aryl group substituted with.
R ³¹ is particularly preferably an alkyl group having 1 to 4 carbon atoms having no substituent or a fluorinated alkyl group having 1 to 4 carbon atoms.
As the organic group for R ^32, a linear, branched, or cyclic alkyl group, aryl group, or cyano group is preferable. As the alkyl group and aryl group for R ^32, the same alkyl groups and aryl groups as those described above for R ³¹ can be used.
R ³² is particularly preferably a cyano group, an alkyl group having 1 to 8 carbon atoms having no substituent, or a fluorinated alkyl group having 1 to 8 carbon atoms.

  More preferable examples of the oxime sulfonate-based acid generator include compounds represented by the following general formula (B-2) or (B-3).

［式（Ｂ−２）中、Ｒ^３３は、シアノ基、置換基を有さないアルキル基またはハロゲン化アルキル基である。Ｒ^３４はアリール基である。Ｒ^３５は置換基を有さないアルキル基またはハロゲン化アルキル基である。］

[In Formula (B-2), R ³³ represents a cyano group, an alkyl group having no substituent, or a halogenated alkyl group. R ³⁴ is an aryl group. R ³⁵ represents an alkyl group having no substituent or a halogenated alkyl group. ]

［式（Ｂ−３）中、Ｒ^３６はシアノ基、置換基を有さないアルキル基またはハロゲン化アルキル基である。Ｒ^３７は２または３価の芳香族炭化水素基である。Ｒ^３８は置換基を有さないアルキル基またはハロゲン化アルキル基である。ｐ”は２または３である。］

[In Formula (B-3), R ³⁶ represents a cyano group, an alkyl group having no substituent, or a halogenated alkyl group. R ³⁷ is a divalent or trivalent aromatic hydrocarbon group. ^R38 is an alkyl group having no substituent or a halogenated alkyl group. p ″ is 2 or 3.]

In the general formula (B-2), the alkyl group or halogenated alkyl group having no substituent of R ³³ preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and carbon atoms. Numbers 1 to 6 are most preferable.
R ³³ is preferably a halogenated alkyl group, more preferably a fluorinated alkyl group.
The fluorinated alkyl group for R ³³ is preferably such that the hydrogen atom of the alkyl group is 50% or more fluorinated, more preferably 70% or more fluorinated, and 90% or more fluorinated. Particularly preferred.
As the aryl group of R ³⁴ , one hydrogen atom is removed from an aromatic hydrocarbon ring such as a phenyl group, a biphenyl group, a fluorenyl group, a naphthyl group, an anthryl group, or a phenanthryl group. And a heteroaryl group in which a part of carbon atoms constituting the ring of these groups is substituted with a heteroatom such as an oxygen atom, a sulfur atom, or a nitrogen atom. Among these, a fluorenyl group is preferable.
The aryl group of R ³⁴ may have a substituent such as an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group, or an alkoxy group. The alkyl group or halogenated alkyl group in the substituent preferably has 1 to 8 carbon atoms, and more preferably 1 to 4 carbon atoms. The halogenated alkyl group is preferably a fluorinated alkyl group.
The alkyl group or halogenated alkyl group having no substituent of R ³⁵ preferably has 1 to 10 carbon atoms, more preferably 1 to 8 carbon atoms, and most preferably 1 to 6 carbon atoms.
R ³⁵ is preferably a halogenated alkyl group, more preferably a fluorinated alkyl group.
The fluorinated alkyl group for R ³⁵ is preferably such that the hydrogen atom of the alkyl group is 50% or more fluorinated, more preferably 70% or more fluorinated, and 90% or more fluorinated. Particularly preferred is the strength of the acid generated. Most preferably, it is a fully fluorinated alkyl group in which a hydrogen atom is 100% fluorine-substituted.

In the general formula (B-3), the alkyl group or halogenated alkyl group having no substituent for R ³⁶ is the same as the alkyl group or halogenated alkyl group having no substituent for R ^33. Is mentioned.
Examples of the divalent or trivalent aromatic hydrocarbon group for R ³⁷ include groups obtained by further removing one or two hydrogen atoms from the aryl group for R ³⁴ .
Examples of the alkyl group or halogenated alkyl group having no substituent of R ³⁸ include the same alkyl groups or halogenated alkyl groups as those having no substituent of R ³⁵ .
p ″ is preferably 2.

Specific examples of the oxime sulfonate acid generator include α- (p-toluenesulfonyloxyimino) -benzyl cyanide, α- (p-chlorobenzenesulfonyloxyimino) -benzyl cyanide, α- (4-nitrobenzenesulfonyloxy). Imino) -benzylcyanide, α- (4-nitro-2-trifluoromethylbenzenesulfonyloxyimino) -benzylcyanide, α- (benzenesulfonyloxyimino) -4-chlorobenzylcyanide, α- (benzenesulfonyl) Oxyimino) -2,4-dichlorobenzyl cyanide, α- (benzenesulfonyloxyimino) -2,6-dichlorobenzyl cyanide, α- (benzenesulfonyloxyimino) -4-methoxybenzyl cyanide, α- ( 2-Chlorobenzenesulfonyloxyimino) 4-methoxybenzylcyanide, α- (benzenesulfonyloxyimino) -thien-2-ylacetonitrile, α- (4-dodecylbenzenesulfonyloxyimino) -benzylcyanide, α-[(p-toluenesulfonyloxyimino) -4-methoxyphenyl] acetonitrile, α-[(dodecylbenzenesulfonyloxyimino) -4-methoxyphenyl] acetonitrile, α- (tosyloxyimino) -4-thienyl cyanide, α- (methylsulfonyloxyimino) -1-cyclo Pentenyl acetonitrile, α- (methylsulfonyloxyimino) -1-cyclohexenylacetonitrile, α- (methylsulfonyloxyimino) -1-cycloheptenylacetonitrile, α- (methylsulfonyloxyimino) -1-cyclooctene Acetonitrile, α- (trifluoromethylsulfonyloxyimino) -1-cyclopentenylacetonitrile, α- (trifluoromethylsulfonyloxyimino) -cyclohexylacetonitrile, α- (ethylsulfonyloxyimino) -ethylacetonitrile, α- (propyl Sulfonyloxyimino) -propylacetonitrile, α- (cyclohexylsulfonyloxyimino) -cyclopentylacetonitrile, α- (cyclohexylsulfonyloxyimino) -cyclohexylacetonitrile, α- (cyclohexylsulfonyloxyimino) -1-cyclopentenylacetonitrile, α- ( Ethylsulfonyloxyimino) -1-cyclopentenylacetonitrile, α- (isopropylsulfonyloxyimino) -1-cyclope Nthenyl acetonitrile, α- (n-butylsulfonyloxyimino) -1-cyclopentenylacetonitrile, α- (ethylsulfonyloxyimino) -1-cyclohexenylacetonitrile, α- (isopropylsulfonyloxyimino) -1-cyclohexenylacetonitrile , Α- (n-butylsulfonyloxyimino) -1-cyclohexenylacetonitrile, α- (methylsulfonyloxyimino) -phenylacetonitrile, α- (methylsulfonyloxyimino) -p-methoxyphenylacetonitrile, α- (trifluoro Methylsulfonyloxyimino) -phenylacetonitrile, α- (trifluoromethylsulfonyloxyimino) -p-methoxyphenylacetonitrile, α- (ethylsulfonyloxyimino) -p- Butoxy phenylacetonitrile, alpha-(propylsulfonyl oxyimino)-p-methylphenyl acetonitrile, alpha-like (methylsulfonyloxyimino)-p-bromophenyl acetonitrile.
Further, an oxime sulfonate-based acid generator disclosed in JP-A-9-208554 (paragraphs [0012] to [0014] [Chemical 18] to [Chemical 19]), pamphlet of International Publication No. 04/074242, An oxime sulfonate-based acid generator disclosed in Examples 1 to 40) on pages 65 to 85 can also be suitably used.
Moreover, the following can be illustrated as a suitable thing.

Among diazomethane acid generators, specific examples of bisalkyl or bisarylsulfonyldiazomethanes include bis (isopropylsulfonyl) diazomethane, bis (p-toluenesulfonyl) diazomethane, bis (1,1-dimethylethylsulfonyl) diazomethane, Examples include bis (cyclohexylsulfonyl) diazomethane, bis (2,4-dimethylphenylsulfonyl) diazomethane, and the like.
Further, diazomethane acid generators disclosed in JP-A-11-035551, JP-A-11-035552, and JP-A-11-035573 can also be suitably used.
Examples of poly (bissulfonyl) diazomethanes include 1,3-bis (phenylsulfonyldiazomethylsulfonyl) propane and 1,4-bis (phenylsulfonyldiazo) disclosed in JP-A-11-322707. Methylsulfonyl) butane, 1,6-bis (phenylsulfonyldiazomethylsulfonyl) hexane, 1,10-bis (phenylsulfonyldiazomethylsulfonyl) decane, 1,2-bis (cyclohexylsulfonyldiazomethylsulfonyl) ethane, 1,3 -Bis (cyclohexylsulfonyldiazomethylsulfonyl) propane, 1,6-bis (cyclohexylsulfonyldiazomethylsulfonyl) hexane, 1,10-bis (cyclohexylsulfonyldiazomethylsulfonyl) decane, etc. Door can be.

(B) As a component, these acid generators may be used individually by 1 type, and may be used in combination of 2 or more type.
The content of the component (B) in the first positive resist composition is preferably 0.5 to 50 parts by mass and more preferably 1 to 40 parts by mass with respect to 100 parts by mass of the component (A). By setting it within the above range, pattern formation is sufficiently performed. Moreover, since a uniform solution is obtained and storage stability becomes favorable, it is preferable.

[Optional ingredients]
The first positive resist composition may further contain a nitrogen-containing organic compound (hereinafter referred to as “component (D)”) as an optional component.
The component (D) is not particularly limited as long as it acts as an acid diffusion controller, that is, a quencher that traps the acid generated from the component (B) by exposure, and a wide variety of components have already been proposed. Therefore, any known one may be used.
As the component (D), a low molecular compound (non-polymer) is usually used. Examples of the component (D) include amines such as aliphatic amines and aromatic amines, and aliphatic amines are preferable, and secondary aliphatic amines and tertiary aliphatic amines are particularly preferable. Here, the aliphatic amine is an amine having one or more aliphatic groups, and the aliphatic groups preferably have 1 to 20 carbon atoms.
Examples of the aliphatic amine include an amine (alkylamine or alkyl alcohol amine) or a cyclic amine in which at least one hydrogen atom of ammonia NH ₃ is substituted with an alkyl group or hydroxyalkyl group having 20 or less carbon atoms. .
Specific examples of alkylamines and alkyl alcohol amines include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine; diethylamine, di-n-propylamine, di- -Dialkylamines such as n-heptylamine, di-n-octylamine, dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine , Trialkylamines such as tri-n-heptylamine, tri-n-octylamine, tri-n-nonylamine, tri-n-decylamine, tri-n-dodecylamine; diethanolamine, triethanolamine, diisopropanolamine, Li isopropanolamine, di -n- octanol amine, tri -n- octanol amine, stearyl diethanolamine, alkyl alcohol amines such as lauryl diethanolamine. Among these, trialkylamine and / or alkyl alcohol amine are preferable.
Examples of the cyclic amine include heterocyclic compounds containing a nitrogen atom as a hetero atom. The heterocyclic compound may be monocyclic (aliphatic monocyclic amine) or polycyclic (aliphatic polycyclic amine).
Specific examples of the aliphatic monocyclic amine include piperidine and piperazine.
As the aliphatic polycyclic amine, those having 6 to 10 carbon atoms are preferable. Specifically, 1,5-diazabicyclo [4.3.0] -5-nonene, 1,8-diazabicyclo [5. 4.0] -7-undecene, hexamethylenetetramine, 1,4-diazabicyclo [2.2.2] octane, and the like.
Other aliphatic amines include tris (2-methoxymethoxyethyl) amine, tris {2- (2-methoxyethoxy) ethyl} amine, tris {2- (2-methoxyethoxymethoxy) ethyl} amine, tris {2 -(1-methoxyethoxy) ethyl} amine, tris {2- (1-ethoxyethoxy) ethyl} amine, tris {2- (1-ethoxypropoxy) ethyl} amine, tris [2- {2- (2-hydroxy Ethoxy) ethoxy} ethylamine and the like.
Examples of the aromatic amine include aniline, pyridine, 4-dimethylaminopyridine, pyrrole, indole, pyrazole, imidazole or derivatives thereof, diphenylamine, triphenylamine, tribenzylamine, 2,6-diisopropylaniline, 2,2 Examples include '-dibilidyl, 4,4'-dibilidyl and the like.
These may be used alone or in combination of two or more.
(D) component is normally used in 0.01-5.0 mass parts with respect to 100 mass parts of (A) component. By setting the content in the above range, the resist pattern shape, the stability over time, and the like are improved.

The first positive resist composition further includes, as an optional component, an organic carboxylic acid, a phosphorus oxo acid, and its oxo acid for the purpose of preventing sensitivity deterioration and improving the resist pattern shape and stability with time. It may contain at least one compound selected from the group consisting of derivatives (hereinafter referred to as component (E)).
As the organic carboxylic acid, for example, acetic acid, malonic acid, citric acid, malic acid, succinic acid, benzoic acid, salicylic acid and the like are suitable.
Examples of phosphorus oxo acids include phosphoric acid, phosphonic acid, and phosphinic acid. Among these, phosphonic acid is particularly preferable.
Examples of the oxo acid derivative of phosphorus include esters in which the hydrogen atom of the oxo acid is substituted with a hydrocarbon group, and the hydrocarbon group includes an alkyl group having 1 to 5 carbon atoms and 6 to 6 carbon atoms. 15 aryl groups and the like.
Examples of phosphoric acid derivatives include phosphoric acid esters such as di-n-butyl phosphate and diphenyl phosphate.
Examples of phosphonic acid derivatives include phosphonic acid esters such as phosphonic acid dimethyl ester, phosphonic acid-di-n-butyl ester, phenylphosphonic acid, phosphonic acid diphenyl ester, and phosphonic acid dibenzyl ester.
Examples of the phosphinic acid derivatives include phosphinic acid esters such as phenylphosphinic acid.
(E) A component may be used individually by 1 type and may use 2 or more types together.
(E) A component is normally used in 0.01-5.0 mass parts with respect to 100 mass parts of (A) component.

  The first positive resist composition further contains, as an optional component, a polymer compound (F1) having a structural unit (f1) containing a base-dissociable group (hereinafter referred to as (F1) component). May be. Examples of the component (F1) include those described in US Patent Application Publication No. 2009/0197204.

  In the present invention, as the component (F1), those having the following structural units (fluorine-containing polymer compound (F1-1)) are particularly preferable.

［式（Ｆ１−１）中、Ｒは水素原子、炭素数１〜５のアルキル基又は炭素数１〜５のハロゲン化アルキル基であり、複数のＲはそれぞれ同じであっても異なっていてもよい。ｊ”は０〜３の整数であり、Ｒ^３０は炭素数１〜５のアルキル基であり、ｈ”は１〜６の整数である。］

[In Formula (F1-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, and a plurality of R may be the same or different. Good. j ″ is an integer of 0 to 3, R ³⁰ is an alkyl group having 1 to 5 carbon atoms, and h ″ is an integer of 1 to 6. ]

In formula (F1-1), R is the same as R in the structural unit (a1).
j ″ is preferably 0 to 2, more preferably 0 or 1, and most preferably 0.
R ³⁰ is the same as the lower alkyl group in R, particularly preferably a methyl group or an ethyl group, and most preferably an ethyl group.
h ″ is preferably 3 or 4, and most preferably 4.

The mass average molecular weight (Mw) of the component (F1) (polystyrene conversion standard by gel permeation chromatography) is not particularly limited, preferably 2000-100000, more preferably 3000-100000, and more preferably 4000-50000. Preferably, 5000 to 50000 is most preferable. If it is below the upper limit of this range, it has sufficient solubility in a resist solvent to be used as a resist, and if it is above the lower limit of this range, dry etching resistance and resist pattern cross-sectional shape are good.
Further, the dispersity (Mw / Mn) is preferably 1.0 to 5.0, more preferably 1.0 to 3.0, and most preferably 1.2 to 2.8.

As the component (F1), one type may be used alone, or two or more types may be used in combination.
The content of the component (F1) in the first positive resist composition is preferably 0.1 to 50 parts by mass, more preferably 0.1 to 40 parts by mass with respect to 100 parts by mass of the component (A). .3 to 30 parts by mass is particularly preferable, and 0.5 to 15 parts by mass is most preferable. The hydrophobicity of the resist film formed using the positive resist composition is improved by setting it to the lower limit value or more of the above range, and has a hydrophobic property suitable for immersion exposure. If so, the lithography properties are improved.
Such a component (F1) can also be suitably used as an additive for a resist composition for immersion exposure.

  If desired, the first positive resist composition may further contain miscible additives such as an additional resin for improving the performance of the resist film, a surfactant for improving coating properties, and a dissolution inhibitor. , Plasticizers, stabilizers, colorants, antihalation agents, dyes, and the like can be added as appropriate.

The first positive resist composition can be produced by dissolving the material in an organic solvent (hereinafter referred to as (S) component).
As the component (S), any component can be used as long as it can dissolve each component to be used to form a uniform solution. Conventionally, any one of known solvents for chemically amplified resists can be used. Two or more types can be appropriately selected and used.
For example, lactones such as γ-butyrolactone; ketones such as acetone, methyl ethyl ketone, cyclohexanone (CH), methyl-n-pentyl ketone, methyl isopentyl ketone, 2-heptanone; ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol Polyhydric alcohols such as: ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, dipropylene glycol monoacetate, etc., compounds having an ester bond, monohydric ethers of the polyhydric alcohols or compounds having an ester bond , Monoalkyl ethers such as monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether Derivatives of polyhydric alcohols such as compounds having an ether bond [in these, propylene glycol monomethyl ether acetate (PGMEA) and propylene glycol monomethyl ether (PGME) are preferred]; cyclic ethers such as dioxane, and lactic acid Esters such as methyl, ethyl lactate (EL), methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate; anisole, ethyl benzyl ether, cresyl methyl ether, Good quality such as diphenyl ether, dibenzyl ether, phenetol, butyl phenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, mesitylene, etc. Examples include aromatic organic solvents. Moreover, the alcohol type organic solvent mentioned above, a fluorine type organic solvent, and the ether type organic solvent which does not have a hydroxyl group can also be mentioned.
These organic solvents may be used independently and may be used as 2 or more types of mixed solvents.
Among these, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), γ-butyrolactone, EL, and CH are preferable. When forming a first resist pattern by performing patterning using a chemically amplified positive resist composition twice or more, as an organic solvent blended in a chemically amplified positive resist composition used later An alcohol-based organic solvent, a fluorine-based organic solvent, and an ether-based organic solvent having no hydroxyl group are preferable, and one or more selected from an alcohol-based organic solvent and an ether-based organic solvent having no hydroxyl group are more preferable.
Moreover, the mixed solvent which mixed PGMEA and the polar solvent is also preferable. The blending ratio (mass ratio) may be appropriately determined in consideration of the compatibility between PGMEA and the polar solvent, preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2. It is preferable to be within the range.
More specifically, when EL is blended as a polar solvent, the mass ratio of PGMEA: EL is preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2. Moreover, when mix | blending PGME as a polar solvent, the mass ratio of PGMEA: PGME becomes like this. Preferably it is 1: 9-9: 1, More preferably, it is 2: 8-8: 2, More preferably, it is 3: 7-7: 3.
In addition, as the component (S), a mixed solvent of at least one selected from PGMEA, PGME, CH, and EL and γ-butyrolactone is also preferable. In this case, the mixing ratio of the former and the latter is preferably 70:30 to 95: 5.
(S) The usage-amount of a component is not specifically limited, It is a density | concentration which can be apply | coated to a board | substrate etc., and is suitably set according to a coating film thickness. Generally, it is used so that the solid content concentration of the resist composition is in the range of 1 to 20% by mass, preferably 2 to 15% by mass.

<Pattern reversal composition>
The pattern reversal composition of the present invention may be any composition that can form a pattern reversal film that remains without being removed on the support while the first resist pattern is removed by alkali development. .
The pattern reversal composition contains an organic solvent ((S ′) component) that does not dissolve the first resist film. For example, the pattern reversal composition has a lower alkalinity than the first resist pattern after the step (3). Examples include those capable of forming a pattern reversal film having development solubility. The pattern reversal composition is not removed from the support during alkali development and has a moderate alkali development solubility that is lower than the first resist pattern after the step (3). When the reversal film is formed (at the time of application), even if the portion of the pattern reversal film 6 in FIG. 3B existing on the upper surface of the resist pattern 2b becomes thicker or its thickness varies, FIG. Since the reverse pattern of c) can be formed, it is preferable. The moderate alkali development solubility can be controlled by a combination of the component (A ′) and the component (B ′) described later.

Specifically, such a pattern reversal composition is a chemically amplified or non-chemically amplified positive resist composition having a higher energy amount than that of the first positive resist composition and having increased solubility in an alkaline developer. And a resin composition having a predetermined solubility in an alkali developer (solubility in an alkali developer hardly changes depending on the amount of energy). Among these, a chemically amplified positive resist composition that has a higher energy amount and higher solubility in an alkaline developer than the first positive resist composition is preferable.
When a chemically amplified positive resist composition is used as the pattern reversal composition, as described later, for example, by controlling the difference in deprotection energy of the acid dissociable, dissolution inhibiting group in the resin component, it is dissolved and removed by alkali development. A pattern reversal film that is difficult to be formed can be easily formed, and general-purpose resin components or resist compositions can be used as they are. Further, when a chemically amplified positive resist composition is used as a pattern reversal composition, after forming a reversal pattern, selective reversal, post-exposure heating (PEB) and alkali development are performed on the reversal pattern. Further, a pattern having a more complicated structure can be formed.

However, the pattern reversal composition in the present invention is not limited to the chemically amplified positive resist composition, and a non-chemically amplified positive resist composition may be used.
As the non-chemically amplified resist composition, those conventionally proposed as a radiation-sensitive composition can be used. And a resist composition containing a photosensitive component. The resist composition may contain a sensitizer as necessary.
In addition, as the pattern reversal composition in the present invention, a resin composition having a predetermined solubility in an alkali developer (solubility in an alkali developer hardly changes depending on the amount of energy) may be used. The resin component in the resin composition is, for example, a resin component having no structural unit containing an acid dissociable, dissolution inhibiting group such as the structural unit (a1) described above, and the structural unit (a3) (among others) A resin component containing the structural unit represented by the formula (a3-3) is preferable.

(Second positive resist composition)
The chemically amplified positive resist composition (hereinafter sometimes referred to as the second positive resist composition) used as the pattern reversal composition is, for example, higher than that of the first positive resist composition. A number of chemically amplified resist compositions that have been proposed so far, such as those whose solubility in alkali developer increases with the amount of energy, as mentioned in the description of the first positive resist composition described above. Among these, it can select suitably and can be used.
For example, when the first positive resist composition containing an acid generator component (B) that generates an acid upon exposure and a base material component (A) having an acid dissociable, dissolution inhibiting group is used, As the positive resist composition, an acid generator component (B ′) that generates an acid upon exposure and a base material component (A ′) having an acid dissociable, dissolution inhibiting group (hereinafter referred to as “(A ′) component”). ) And the base material component (A ′) has an acid dissociable dissolution inhibiting group having higher deprotection energy than the acid dissociable dissolution inhibiting group of the base material component (A). It is preferable.
When the first positive resist composition contains an acid generator component (B) that generates an acid upon exposure and a base material component (A) having an acid dissociable, dissolution inhibiting group, The positive resist composition includes an acid generator component (B ′) that generates an acid upon exposure and a substrate component (A ″) that does not have an acid dissociable, dissolution inhibiting group (hereinafter referred to as “(A ″) component”). It is also preferable that it contains.
When such a second positive resist composition is used, a pattern reversal film that is difficult to dissolve and remove by alkali development can be formed, and the first resist pattern is dissolved and removed by alkali development in step (4). On the other hand, the pattern reversal film hardly dissolves (the part of the pattern reversal film 6 in FIG. 3B existing on the upper surface of the resist pattern 2b is dissolved and removed) and is not removed from the support. The reversal pattern can be formed. In addition, when forming a resist film using the second positive resist composition, it is difficult to be affected by the acid component contained in the first resist pattern, so that a good contrast can be obtained and the resolution or shape can be improved. A good reversal pattern can be formed.
The second positive resist composition may be appropriately set according to the composition of the first positive resist composition. The combination of the acid dissociable, dissolution inhibiting groups in the first positive resist composition and the second positive resist composition will be described in detail below. The first positive resist composition and the second positive resist composition This selection method will be described later.

[(A ′) component]
(A ′) component has a higher deprotection energy (harder to dissociate) than the acid dissociable dissolution inhibiting group of the base component (A) blended in the first positive resist composition. Examples of the base material component having a group include the same as those described in the description of the component (A).
In the present invention, the component (A ′) may contain a resin component (A1 ′) (hereinafter sometimes referred to as the component (A1 ′)) whose solubility in an alkaline developer is increased by the action of an acid. Preferably, those having a structural unit derived from an acrylate ester and a structural unit (a6 ′) derived from hydroxystyrene are more preferred.
The component (A1 ′) particularly preferably has a structural unit (a1 ′) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
In addition to the structural unit (a1 ′), the component (A1 ′) preferably further has a structural unit derived from hydroxystyrene.

Structural unit (a1 ′):
As the structural unit (a1 ′), those similar to the structural unit (a1) exemplified in the description of the component (A1) can be mentioned. Examples of the acid dissociable, dissolution inhibiting group include the aliphatic branched acid dissociable, dissolution inhibiting groups exemplified as the above-described tertiary alkyl ester type acid dissociable, dissolution inhibiting groups (for example, the formula -C (R ⁷¹ ) (R ⁷² ) (Group represented by (R ⁷³ )) is preferred.
As the structural unit (a1 ′), one type of structural unit may be used alone, or two or more types of structural units may be used in combination.
In the component (A1 ′), the proportion of the structural unit (a1 ′) is preferably 10 to 80 mol% and more preferably 20 to 70 mol% with respect to the total of all the structural units constituting the component (A1 ′). More preferably, it is 25-50 mol%. By setting it to the lower limit value or more, a pattern can be easily obtained when the resist composition is used, and by setting it to the upper limit value or less, it is possible to balance with other structural units.

Structural unit (a6 ′):
The structural unit (a6 ′) is a structural unit derived from hydroxystyrene.
By having the structural unit (a6 ′), the (A1 ′) component has better solubility in the organic solvent ((S ′) component) that does not dissolve the first resist film. In addition, it has a slight solubility in an alkali developer.

  Preferred examples of the structural unit (a6 ′) include structural units represented by general formula (a6′-1) shown below.

［式中、Ｒ^２０は水素原子又は炭素数１〜５のアルキル基であり；Ｒ^６は炭素数１〜５のアルキル基であり；ｐは１〜３の整数であり；ｑは０〜２の整数である。］

[Wherein, R ²⁰ is a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; R ⁶ is an alkyl group having 1 to 5 carbon atoms; p is an integer of 1 to 3; q is 0 to 2] Is an integer. ]

In the general formula (a6′-1), as the alkyl group having 1 to 5 carbon atoms in R ²⁰ , specifically, methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, tert group -Linear or branched alkyl groups, such as a butyl group, a pentyl group, an isopentyl group, and a neopentyl group.
R ²⁰ is particularly preferably a hydrogen atom or a methyl group.

p is an integer of 1 to 3, preferably 1.
The bonding position of the hydroxyl group may be any of the o-position, m-position and p-position of the phenyl group. When p is 1, the p-position is preferred because it is readily available and inexpensive. When p is 2 or 3, arbitrary substitution positions can be combined.

q is an integer of 0-2. Among these, q is preferably 0 or 1, and is preferably 0 industrially.
As the lower alkyl group for R ^{6, the same as} the lower alkyl group for R ²⁰ can be exemplified.
When q is 1, the substitution position of R ⁶ may be any of the o-position, m-position, and p-position. When q is 2, arbitrary substitution positions can be combined. At this time, the plurality of R ⁶ may be the same or different.

As the structural unit (a6 ′), one type of structural unit may be used alone, or two or more types of structural units may be used in combination.
The proportion of the structural unit (a6 ′) in the component (A1 ′) is preferably 50 to 90 mol% with respect to the total of all the structural units constituting the component (A1 ′), and is 55 to 85 mol%. More preferably, it is more preferably 60 to 80 mol%. Within this range, moderate alkali solubility is obtained when the resist composition is prepared, and the balance with other structural units is good.

・ Other structural units:
The component (A1 ′) may contain other structural units other than the structural units (a1 ′) and (a6 ′) as long as the effects of the present invention are not impaired.
The other structural unit is not particularly limited as long as it is another structural unit that is not classified into the above structural units (a1 ′) and (a6 ′), and for ArF excimer laser, KrF excimer laser (preferably A number of hitherto known materials can be used for resist resins such as ArF excimer laser).
Examples of the other structural units include a structural unit (a7 ′) derived from styrene, a structural unit (a5 ′) represented by the general formula (a5 ′) described later, and acrylic acid containing a lactone-containing cyclic group. A structural unit derived from an ester (a2 ′), a structural unit derived from an acrylic ester containing a polar group-containing aliphatic hydrocarbon group (a3 ′), and an acrylic containing a non-acid-dissociable aliphatic polycyclic group And a structural unit (a4 ′) derived from an acid ester.
Each structural unit may be used individually by 1 type, and may use 2 or more types together.

..Structural unit (a7 ′):
The structural unit (a7 ′) is a structural unit derived from styrene.
By having the structural unit (a7 ′), the solubility in an alkali developer can be adjusted. Moreover, when it is set as a resist composition, heat resistance and dry etching tolerance improve.
In this specification, “styrene” refers to styrene and those in which the hydrogen atom at the α-position of styrene is substituted with another substituent such as an alkyl group, and derivatives thereof (excluding the above-mentioned hydroxystyrene). Include concepts. Moreover, what substituted the hydrogen atom of the phenyl group with substituents, such as a C1-C5 alkyl group, etc. shall also be included.
“Structural unit derived from styrene” means a structural unit formed by cleavage of an ethylenic double bond of styrene.
Preferable examples of the structural unit (a7 ′) include structural units represented by general formula (a7′-1) shown below.

［式中、Ｒ^２０は前記と同じであり；Ｒ^４は炭素数１〜５のアルキル基であり；ｘは０〜３の整数である。］

[Wherein, R ²⁰ is the same as described above; R ⁴ is an alkyl group having 1 to 5 carbon atoms; x is an integer of 0 to 3; ]

In the general formula (a7′-1), examples of R ²⁰ and R ⁴ are the same as R ²⁰ and R ^{6 in the} general formula (a6′-1).
x is an integer of 0 to 3, preferably 0 or 1, and industrially particularly preferably 0.
When x is 1, the substitution position of R ⁴ may be any of the o-position, m-position and p-position of the phenyl group. When x is 2 or 3, any substitution position can be combined. At this time, the plurality of R ⁴ may be the same or different.
The proportion of the structural unit (a7 ′) in the component (A1 ′) is preferably 1 to 40 mol%, more preferably 3 to 30 mol%, based on the total of all structural units constituting the component (A1 ′). 5-25 mol% is more preferable. The effect by having a structural unit (a7 ') as it is more than the lower limit of this range is high, and the balance with another structural unit is favorable as it is below an upper limit.

..Structural unit (a5 ′):
The structural unit (a5 ′) is a structural unit represented by the following general formula (a5 ′).
By having the structural unit (a5 ′), the (A1 ′) component has better solubility in the organic solvent ((S ′) component) that does not dissolve the first resist film.

［式中、Ｒは水素原子、炭素数１〜５のアルキル基または炭素数１〜５のハロゲン化アルキル基であり；Ｙ^１は脂肪族環式基であり、Ｚは第３級アルキル基含有基またはアルコキシアルキル基であり；ａは１〜３の整数であり、ｂは０〜２の整数であり、且つａ＋ｂ＝１〜３であり；ｃ、ｄ、ｅはそれぞれ独立して０〜３の整数である。］

Wherein R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or a halogenated alkyl group having 1 to 5 carbon atoms; Y ¹ is an aliphatic cyclic group, and Z contains a tertiary alkyl group. A is an integer of 1 to 3, b is an integer of 0 to 2, and a + b = 1 to 3; c, d and e are each independently 0 to 3; Is an integer. ]

In formula (a5 ′), R is the same as R in the description of the structural unit (a1). R is preferably a hydrogen atom or a methyl group.
Y ¹ is an aliphatic cyclic group. The “aliphatic cyclic group” means a monocyclic group or a polycyclic group having no aromaticity.
The “aliphatic cyclic group” in the structural unit (a5 ′) may or may not have a substituent. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, a fluorine atom, a fluorinated alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, and an oxygen atom (= O).
The structure of the basic ring (aliphatic ring) excluding the substituent of the “aliphatic cyclic group” is not limited to being a ring composed of carbon and hydrogen (hydrocarbon ring), but the ring (aliphatic ring) The ring structure may contain an oxygen atom. The “hydrocarbon ring” may be either saturated or unsaturated, but is usually preferably saturated.
The aliphatic cyclic group may be either a polycyclic group or a monocyclic group. Examples of the aliphatic cyclic group include a monocycloalkane which may or may not be substituted with a lower alkyl group, a fluorine atom or a fluorinated alkyl group; a bicycloalkane, a tricycloalkane, or a tetracycloalkane. Groups obtained by removing two or more hydrogen atoms from polycycloalkanes and the like. More specifically, monocycloalkanes such as cyclopentane and cyclohexane, and groups obtained by removing two or more hydrogen atoms from polycycloalkanes such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane are listed. .
Examples of the aliphatic cyclic group include two or more hydrogen atoms from tetrahydrofuran or tetrahydropyran which may or may not be substituted with a lower alkyl group, a fluorine atom or a fluorinated alkyl group. Examples include groups other than.
The aliphatic cyclic group in the structural unit (a5 ′) is preferably a polycyclic group, and among them, a group obtained by removing two or more hydrogen atoms from adamantane is preferable.

  In the general formula (a5 ′), Z represents a tertiary alkyl group-containing group or an alkoxyalkyl group.

(Tertiary alkyl group-containing group)
“Tertiary alkyl group” refers to an alkyl group having a tertiary carbon atom. As described above, the “alkyl group” represents a monovalent saturated hydrocarbon group, and includes a chain (straight chain or branched chain) alkyl group and an alkyl group having a cyclic structure.
The “tertiary alkyl group-containing group” refers to a group containing a tertiary alkyl group in its structure. The tertiary alkyl group-containing group may be composed only of a tertiary alkyl group, or may be composed of a tertiary alkyl group and another atom or group other than the tertiary alkyl group. .
The “other atom or group other than the tertiary alkyl group” constituting the tertiary alkyl group-containing group together with the tertiary alkyl group includes a carbonyloxy group, a carbonyl group, an alkylene group, an oxygen atom (—O— ) And the like.

Examples of the tertiary alkyl group-containing group in Z include a tertiary alkyl group-containing group having no cyclic structure, and a tertiary alkyl group-containing group having a cyclic structure.
A tertiary alkyl group-containing group having no cyclic structure is a group containing a branched tertiary alkyl group as the tertiary alkyl group and having no cyclic structure in the structure.
Examples of the branched tertiary alkyl group include groups represented by the following general formula (I).

In formula (I), R ^{21 to} R ²³ each independently represents a linear or branched alkyl group. 1-5 are preferable and, as for carbon number of this alkyl group, 1-3 are more preferable.
Moreover, it is preferable that the total carbon number of group represented by general formula (I) is 4-7, it is more preferable that it is 4-6, and it is most preferable that it is 4-5.
Preferred examples of the group represented by the general formula (I) include a tert-butyl group and a tert-pentyl group, and a tert-butyl group is more preferable.

Examples of the tertiary alkyl group-containing group that does not have a cyclic structure include the above-described branched tertiary alkyl group; the above-described branched tertiary alkyl group is a linear or branched alkylene group A tertiary alkyl group-containing chain alkyl group bonded to the above; a tertiary alkyloxycarbonyl group having the branched tertiary alkyl group described above as the tertiary alkyl group; And tertiary alkyloxycarbonylalkyl groups having a branched tertiary alkyl group.
The alkylene group in the tertiary alkyl group-containing chain alkyl group is preferably an alkylene group having 1 to 5 carbon atoms, more preferably an alkylene group having 1 to 4 carbon atoms, and further preferably an alkylene group having 2 to 2 carbon atoms.
Examples of the chain-like tertiary alkyloxycarbonyl group include a group represented by the following general formula (II).
^R 21 ^{to R 23} in the formula (II) is the same as ^R 21 ^{to R 23} in general formula (I).
The chain-like tertiary alkyloxycarbonyl group is preferably a tert-butyloxycarbonyl group (t-boc) or a tert-pentyloxycarbonyl group.

Examples of the chain-like tertiary alkyloxycarbonylalkyl group include a group represented by the following general formula (III).
^R 21 ^{to R 23} in the formula (III) are the same as ^R 21 ^{to R 23} in general formula (I).
f is an integer of 1 to 3, and 1 or 2 is preferable.
As the chain-like tertiary alkyloxycarbonylalkyl group, a tert-butyloxycarbonylmethyl group and a tert-butyloxycarbonylethyl group are preferable.
Of these, the tertiary alkyl group-containing group having no cyclic structure is preferably a tertiary alkyloxycarbonyl group or a tertiary alkyloxycarbonylalkyl group, more preferably a tertiary alkyloxycarbonyl group. A tert-butyloxycarbonyl group (t-boc) is most preferred.

The tertiary alkyl group-containing group having a cyclic structure is a group having a tertiary carbon atom and a cyclic structure in the structure.
In the tertiary alkyl group-containing group having a cyclic structure, the cyclic structure preferably has 4 to 12 carbon atoms, more preferably 5 to 10 carbon atoms, and more preferably 6 to 10 carbon atoms constituting the ring. Most preferred. Examples of the cyclic structure include groups in which one or more hydrogen atoms have been removed from a polycycloalkane such as monocycloalkane, bicycloalkane, tricycloalkane, and tetracycloalkane. Preferable examples include monocycloalkanes such as cyclopentane and cyclohexane, and groups obtained by removing one or more hydrogen atoms from polycycloalkanes such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane.

Examples of the tertiary alkyl group-containing group having a cyclic structure include a group having the following [1] or [2] group as the tertiary alkyl group.
[1] A group in which a linear or branched alkyl group is bonded to a carbon atom constituting a ring of a cyclic alkyl group (cycloalkyl group), and the carbon atom is a tertiary carbon atom.
[2] A group in which an alkylene group having a tertiary carbon atom (branched alkylene group) is bonded to the carbon atom constituting the ring of the cycloalkyl group.

The linear or branched alkyl group in the group [1] preferably has 1 to 5 carbon atoms, more preferably 1 to 4 carbon atoms, and most preferably 1 to 3 carbon atoms. .
Examples of the group [1] include 2-methyl-2-adamantyl group, 2-ethyl-2-adamantyl group, 1-methyl-1-cycloalkyl group, 1-ethyl-1-cycloalkyl group and the like.

In the group [2], the cycloalkyl group to which the branched alkylene group is bonded may have a substituent. Examples of the substituent include a fluorine atom, a fluorinated lower alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, an oxygen atom (═O), and the like.
Examples of the group [2] include groups represented by the following chemical formula (IV).

In the formula (IV), R ²⁴ is a cycloalkyl group which may or may not have a substituent. Examples of the substituent that the cycloalkyl group may have include a fluorine atom, a fluorinated lower alkyl group having 1 to 5 carbon atoms substituted with a fluorine atom, and an oxygen atom (═O).
R ²⁵ and R ²⁶ are each independently a linear or branched alkyl group, and the alkyl group is the same as the alkyl group of R ^{21 to} R ²³ in the formula (I). Can be mentioned.

(Alkoxyalkyl group)
As an alkoxyalkyl group in Z, group represented by the following general formula (V) is mentioned, for example.

In the formula, R ⁴⁵ is a linear, branched or cyclic alkyl group.
When R ⁴⁵ is linear or branched, it preferably has 1 to 5 carbon atoms, more preferably an ethyl group or a methyl group, and most preferably an ethyl group.
When R ⁴⁵ is cyclic, it preferably has 4 to 15 carbon atoms, more preferably 4 to 12 carbon atoms, and most preferably 5 to 10 carbon atoms. For example, one or more hydrogen atoms from a polycycloalkane such as monocycloalkane, bicycloalkane, tricycloalkane, tetracycloalkane, which may or may not be substituted with a fluorine atom or a fluorinated alkyl group And the like except for. More specific examples include monocycloalkanes such as cyclopentane and cyclohexane, and groups obtained by removing one or more hydrogen atoms from polycycloalkanes such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. . Among them, a group obtained by removing one or more hydrogen atoms from adamantane is preferable.
^R42 is a linear or branched alkylene group. The alkylene group preferably has 1 to 5 carbon atoms, more preferably 1 to 3 carbon atoms, and still more preferably 1 to 2 carbon atoms.
As the alkoxyalkyl group for Z, a group represented by the following general formula (VI) is particularly preferable.

In formula (VI), R ⁴⁵ is the same as defined above, and R ⁴³ and R ⁴⁴ each independently represents a linear or branched alkyl group or a hydrogen atom.
In R ⁴³ and R ⁴⁴ , the alkyl group preferably has 1 to 15 carbon atoms, may be linear or branched, and is preferably an ethyl group or a methyl group, and most preferably a methyl group.
In particular, it is preferable that one of R ⁴³ and R ⁴⁴ is a hydrogen atom and the other is a methyl group.

  Among these, as Z, a tertiary alkyl group-containing group is preferable, a group represented by the general formula (II) is more preferable, and a tert-butyloxycarbonyl group (t-boc) is most preferable.

In the general formula (a5 ′), a is an integer of 1 to 3, b is an integer of 0 to 2, and a + b = 1 to 3.
a is preferably 1 or 2, and more preferably 1.
b is preferably 0.
a + b is preferably 1 or 2, and more preferably 1.
c is an integer of 0 to 3, preferably 0 or 1, and more preferably 0.
d is an integer of 0 to 3, preferably 0 or 1, and more preferably 0.
e is an integer of 0 to 3, preferably 0 or 1, and more preferably 0.
When b is 1 or more, the structural unit (a5 ′) is also included in the definition of the structural unit (a3 ′), but the structural unit represented by the formula (a5 ′) is the structural unit (a5 ′). And not the structural unit (a3 ′).

  As the structural unit (a5 ′), a structural unit represented by general formula (a5′-1-1), (a5′-1-2) or (a5′-2) shown below is particularly preferable. The structural unit represented by '-1-1) is more preferable.

［式中、Ｒ，Ｚ，ｂ，ｃ，ｄ，ｅはそれぞれ前記と同じである。］

[Wherein R, Z, b, c, d and e are the same as defined above. ]

［式中、Ｒ，Ｚ，ｂ，ｃ，ｄ，ｅはそれぞれ前記と同じである。式中の複数のｅおよびＺはそれぞれ互いに異なっていてもよい。］

[Wherein R, Z, b, c, d and e are the same as defined above. A plurality of e and Z in the formula may be different from each other. ]

［式中、Ｒ，Ｚ，ａ，ｂ，ｃ，ｄ，ｅはそれぞれ前記と同じであり、ｃ”は１〜３の整数である。］

[Wherein, R, Z, a, b, c, d and e are the same as defined above, and c ″ is an integer of 1 to 3.]

In the formula (a5′-2), c ′ is an integer of 1 to 3, preferably 1 or 2, and more preferably 1.
When c in the formula (a5′-2) is 0, the oxygen atom at the terminal of the carbonyloxy group (—C (═O) —O—) of the acrylate ester is bonded to the oxygen atom in the cyclic group. It is preferably not bonded to a carbon atom. That is, when c is 0, there are two or more carbon atoms between the terminal oxygen atom and the oxygen atom in the cyclic group (the number of carbon atoms is 1 (that is, acetal bond and It is preferable that the above is excluded).

  The monomer for deriving the structural unit (a5 ′) is, for example, a compound represented by the following general formula (a5′-0) (an acrylate ester containing an aliphatic cyclic group having 1 to 3 alcoholic hydroxyl groups): The hydroxyl group can be synthesized by protecting a part or all of the hydroxyl group with a tertiary alkyl group-containing group or an alkoxyalkyl group using a known method.

［式中、Ｒ，Ｙ^１，ａ，ｂ，ｃ，ｄ，ｅはそれぞれ前記と同じである。］

[Wherein, R, Y ¹ , a, b, c, d, and e are the same as defined above. ]

  The proportion of the structural unit (a5 ′) in the component (A1 ′) is preferably 1 to 45 mol% with respect to the total of all structural units constituting the component (A1 ′), and is 5 to 45 mol%. More preferably, it is more preferably 5 to 40 mol%, and most preferably 5 to 35 mol%. By setting it to the lower limit value or more, the solubility in an organic solvent such as an alcohol organic solvent, a fluorine organic solvent, or an ether organic solvent having no hydroxyl group is improved. And the balance is good.

..Structural unit (a2 ′):
As the structural unit (a2 ′), those similar to the structural unit (a2) mentioned in the description of the component (A1) can be mentioned.
In the component (A1 ′), the proportion of the structural unit (a2 ′) is preferably 5 to 60 mol%, more preferably 10 to 50 mol%, based on the total of all structural units constituting the component (A1 ′). 20-50 mol% is more preferable. By setting it to the lower limit value or more, the effect of containing the structural unit (a2 ′) can be sufficiently obtained, and by setting the upper limit value or less, it is possible to balance with other structural units.

..Structural unit (a3 ′):
As the structural unit (a3 ′), those similar to the structural unit (a3) exemplified in the description of the component (A1) can be mentioned.
In the component (A1 ′), the proportion of the structural unit (a3 ′) is preferably 5 to 50 mol%, more preferably 5 to 40 mol%, based on all structural units constituting the component (A1 ′). Preferably, 5 to 25 mol% is more preferable. By setting it to the lower limit value or more, the effect of containing the structural unit (a3 ′) can be sufficiently obtained, and by setting it to the upper limit value or less, it is possible to balance with other structural units.

..Structural unit (a4 ′):
As the structural unit (a4 ′), those similar to the structural unit (a4) exemplified in the description of the component (A1) can be mentioned.

The component (A1 ′) is preferably a copolymer having the structural units (a1 ′) and (a6 ′). Examples of such a copolymer include a copolymer composed of the structural units (a1 ′), (a6 ′), and (a7 ′).
In the component (A ′), as the component (A1 ′), one type may be used alone, or two or more types may be used in combination.

The component (A1 ′) can be obtained by polymerizing a monomer that derives each structural unit by a known radical polymerization using a radical polymerization initiator such as azobisisobutyronitrile (AIBN). .
In addition, for the component (A1 ′), a chain transfer agent such as HS—CH ₂ —CH ₂ —CH ₂ —C (CF ₃ ) ₂ —OH is used in combination in the above polymerization, -C terminated _{(CF 3)} may be introduced 2 -OH group. As described above, a copolymer introduced with a hydroxyalkyl group in which a part of hydrogen atoms of an alkyl group is substituted with a fluorine atom reduces development defects and LER (line edge roughness: uneven unevenness of line side walls). It is effective in reducing

The mass average molecular weight (Mw) of the component (A1 ′) (polystyrene conversion standard by gel permeation chromatography (GPC)) is not particularly limited, preferably 1000 to 50000, more preferably 1500 to 30000, 2000 ˜20,000 is most preferred. If it is below the upper limit of this range, it has sufficient solubility in a resist solvent to be used as a resist, and if it is above the lower limit of this range, dry etching resistance and resist pattern cross-sectional shape are good.
Further, the dispersity (Mw / Mn) of the component (A1 ′) is not particularly limited, and is preferably 1.0 to 5.0, more preferably 1.0 to 3.0, and 1.0 to 2.5. Is most preferred.

[(A ″) component]
The component (A ″) is a base material component having no acid dissociable, dissolution inhibiting group.
Suitable examples of the component (A ″) include alkali-soluble resins such as novolak resin, polyhydroxystyrene (PHS), and hydroxystyrene-styrene copolymer.

[(B ′) component]
Examples of the component (B ′) include the same components as the component (B) mentioned in the description of the first positive resist composition.
As the component (B ′), one type may be used alone, or two or more types may be used in combination.
In particular, when the component (A ″) is used as the base component, the acid generator composed of a triphenylsulfonium salt is excellent in the effect of inhibiting dissolution of the film formed using the pattern reversal composition in an alkaline developer. Is preferably used.
The content of the component (B ′) in the second positive resist composition is preferably 0.5 to 50 parts by mass and more preferably 1 to 40 parts by mass with respect to 100 parts by mass of the component (A ′). By setting it within the above range, pattern formation is sufficiently performed. Moreover, since a uniform solution is obtained and storage stability becomes favorable, it is preferable.

[Optional ingredients]
The second positive resist composition may further contain a nitrogen-containing organic compound (hereinafter referred to as (D ′) component) as an optional component.
Examples of the component (D ′) include the same components as the component (D) mentioned in the description of the first positive resist composition.
As the component (D ′), one type may be used alone, or two or more types may be used in combination.
(D ') component is normally used in 0.01-5.0 mass parts with respect to 100 mass parts of (A') component. By setting the content in the above range, the resist pattern shape, the stability over time, and the like are improved.

The second positive resist composition further includes, as an optional component, an organic carboxylic acid, a phosphorus oxo acid, and its oxo acid as an optional component for the purpose of preventing sensitivity deterioration and improving the resist pattern shape and stability with time. It may contain at least one compound selected from the group consisting of derivatives (hereinafter referred to as component (E ′)).
Examples of the component (E ′) include the same components as the component (E) mentioned in the description of the first positive resist composition.
As the component (E ′), one type may be used alone, or two or more types may be used in combination.
(E ') component is normally used in 0.01-5.0 mass parts with respect to 100 mass parts of (A') component.

  If desired, the second positive resist composition may further contain miscible additives such as an additional resin for improving the performance of the resist film, a surfactant for improving coatability, and a dissolution inhibitor. , Plasticizers, stabilizers, colorants, antihalation agents, dyes, and the like can be added as appropriate.

The second positive resist composition can be produced by dissolving the material in an organic solvent.
In the present invention, the second positive resist composition contains, as the organic solvent, the component (S ′) (an organic solvent that does not dissolve the first resist film) as described for the pattern reversal composition. contains.
Examples of the component (S ′) include the same components as those described in the description of the step (4).
The (S ′) component used in the second positive resist composition may be a single type or two or more types.
In the same manner as described for the pattern reversal composition, the second positive resist composition has the (S ″) component ((S ′) component as long as the effect of using the (S ′) component is not impaired. An organic solvent other than the components) may be contained.
As the (S ″) component, the (S) component mentioned in the description of the first positive resist composition is particularly preferable.
The compounding amount of the component (S ″) is preferably 0 to 20% by mass and more preferably 1 to 15% by mass in the total organic solvent compounded in the second positive resist composition.
The amount of the total organic solvent used in the second positive resist composition is not particularly limited, and is usually an amount such that the second positive resist composition becomes a liquid having a concentration that can be applied onto the support. Is used. Generally, it is used so that the solid content concentration is in the range of 1 to 20% by mass, preferably 2 to 15% by mass.

(Selection method of first positive resist composition and second positive resist composition)
As described above, in the present invention, as the second positive resist composition, for example, a pattern reversal film having lower alkali development solubility than the first resist pattern after the step (3) can be formed. In step (4), the first resist pattern is set to be removed by alkali development.
Thereby, a combination of the first positive resist composition and the second positive resist composition used in the pattern forming method of the present invention is selected. In addition, any positive resist composition can be appropriately selected from a large number of chemically amplified resist compositions that have been proposed so far.

  In the present invention, in the step (3), the first resist pattern cleaned using an acidic lithography cleaning solution is baked. Thereby, the acid component adsorbed and remaining on the first resist pattern in step (2) acts on the first resist pattern, and the acid dissociable, dissolution inhibiting group in the first resist pattern is dissociated, The first resist pattern has increased solubility in an alkaline developer. Further, the acid dissociable, dissolution inhibiting group in the second positive resist composition has a higher deprotection energy than the acid dissociable, dissolution inhibiting group in the first positive resist composition. Therefore, the pattern reversal film formed using the second positive resist composition has a lower alkali development solubility than the first resist pattern after the step (3), and the first resist pattern. It is hard to be influenced by the acid component contained in. As a result, in step (4), the first resist pattern is removed by alkali development, and the pattern reversal film remains on the support to form a reversal pattern.

As a method for selecting a combination of the first positive resist composition and the second positive resist composition, for example, the effective PEB temperature of the pattern reversal film formed using the second positive resist composition minimum value (T _min2) is, to be higher than the lowest value of the effective PEB temperature of the first resist film (T _min1), also, preferably how to set their difference becomes a desired value Can be mentioned.
T _min1 and T _min2 can be adjusted by devising the compositions of the first positive resist composition and the second positive resist composition to be used, respectively.
For example, the first positive resist composition and the second positive resist composition each contain a substrate component having an acid dissociable, dissolution inhibiting group (the above-described (A) component, (A ′) component, etc.). In this case, the acid dissociable, dissolution inhibiting group in the second positive resist composition has a higher deprotection energy than the acid dissociable, dissolution inhibiting group in the first positive resist composition. Thereby, when performing exposure and PEB to any positive resist composition,
The second positive resist composition is less likely to increase the solubility in an alkaline developer than the first positive resist composition, and T _min2 is higher than T _min1 .
The difference in deprotection energy of each acid dissociable, dissolution inhibiting group is preferably about 2 kcal / mol or more, and more preferably 2.5 kcal / mol or more.

The deprotection energy of the acid dissociable, dissolution inhibiting group can be obtained from the analysis result obtained by the analysis method including the following steps 1 to 4.
Step 1: A resist composition is prepared using a polymer into which a specific protecting group has been introduced.
Step 2: A resist film is formed from the resist composition prepared in Step 1, and the entire surface is exposed. The exposure amount at this time is the same as the optimum exposure amount (Eop).
Step 3: Analyzing the deprotection reaction using a deprotection reaction analyzer (PAGA-100) manufactured by Risotech Japan Co., Ltd. for the resist film after the exposure process (According to this apparatus, the PEB process is performed. However, by collecting the IR spectrum of the resist film, the structural change of the resist composition during PEB treatment can be confirmed.)
Step 4: Collect data for a plurality of PEB temperatures and perform analysis.

More specifically, the structural unit derived from an acrylate ester having an acid dissociable, dissolution inhibiting group (the structural unit (a1), the structural unit (a1 ′), etc.) will be described as an example. In the structural unit, The deprotection energy of the acid dissociable, dissolution inhibiting group depends on the structure of the acid dissociable, dissolution inhibiting group, the structure of the acid dissociable, dissolution inhibiting group bound to the side chain portion of the constituent unit, etc. Is different.
The following are specific structures of structural units derived from an acid dissociable, dissolution inhibiting group or an acrylate ester having an acid dissociable, dissolution inhibiting group, and the first positive resist composition and the second positive resist Which of the resist compositions is suitable will be described. However, the present invention is not limited to this.

(A) A tertiary alkyl ester-type acid dissociable, dissolution inhibiting group directly bonded to the carboxy group of acrylic acid to form a tertiary alkyl ester, and a ring skeleton of a monovalent aliphatic cyclic group And the tertiary carbon atom is bonded to the carbon atom bonded to the oxygen atom adjacent to the acid dissociable, dissolution inhibiting group (—O— in —C (═O) —O—). The group that is formed.
Here, “acrylic acid” is not only acrylic acid (CH ₂ ═CHCOOH) in which a hydrogen atom is bonded to the α-position carbon atom (carbon atom to which the carbonyl group of acrylic acid is bonded), but also the α-position carbon atom. The concept also includes those in which a substituent (atom or group other than a hydrogen atom) is bonded to. Examples of the substituent bonded to the α-position carbon atom include an alkyl group having 1 to 5 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, and a hydroxyalkyl group. The α-position carbon atom of the acrylate ester is a carbon atom to which a carbonyl group of acrylic acid is bonded unless otherwise specified.
That the group shown by said (a) is directly couple | bonded with the carboxy group of acrylic acid shows that the said group has substituted the hydrogen atom of the carboxy group of acrylic acid.
As the “tertiary alkyl ester type acid dissociable, dissolution inhibiting group that is directly bonded to the carboxy group of acrylic acid to form a tertiary alkyl ester”, specifically, in the description of the structural unit (a1), X ′ in the formula (a1-1) mentioned can be mentioned.
“A group in which a tertiary carbon atom is formed by forming a ring skeleton of a monovalent aliphatic cyclic group and bonding a methyl group to a carbon atom bonded to an atom adjacent to the acid dissociable, dissolution inhibiting group. Examples of the compound include those in which R ¹⁴ in the formulas (1-1) to (1-9) described in the description of the structural unit (a1) is a methyl group.
Such an acid dissociable, dissolution inhibiting group has a relatively high deprotection energy and is difficult to dissociate. Therefore, it is suitable for the second positive resist composition.

(A) A tertiary alkyl ester-type acid dissociable, dissolution inhibiting group that is directly bonded to the carboxy group of acrylic acid to form a tertiary alkyl ester, and a ring skeleton of a monovalent aliphatic cyclic group And an alkyl group having 2 or more carbon atoms is bonded to the carbon atom bonded to the oxygen atom adjacent to the acid dissociable, dissolution inhibiting group (—O— in —C (═O) —O—). A group in which a tertiary carbon atom is formed.
“The monovalent aliphatic cyclic group is composed of a ring skeleton, and an alkyl group having 2 or more carbon atoms is bonded to a carbon atom bonded to an atom adjacent to the acid dissociable, dissolution inhibiting group, thereby forming a tertiary carbon atom. Examples of the “group formed” include those in which R ¹⁴ in the formulas (1-1) to (1-9) is an alkyl group having 2 or more carbon atoms.
Such an acid dissociable, dissolution inhibiting group has a relatively low deprotection energy (e.g., compared to the group shown in (a) above) and is easily dissociated. For example, the 2-methyl-2-adamantyl group (M) in which R ¹⁴ in the formula (1-1) is a methyl group is compared with the 2-ethyl-2-adamantyl group (E) in which R ¹⁴ is an ethyl group. Then, the deprotection energy of M is 11.2 [kcal / mol], whereas the deprotection energy of E is 8.3 [kcal / mol]. The deprotection energy of the ethylcyclohexyl group in which g in the formula (1-2) is 2 and R ¹⁴ is an ethyl group is 8.1 [kcal / mol].
Therefore, the acid dissociable, dissolution inhibiting group is suitable for the first positive resist composition.
However, when an acid dissociable dissolution inhibiting group (for example, an acetal type acid dissociable dissolution inhibiting group) having lower deprotection energy than the acid dissociable dissolution inhibiting group is used in the first positive resist composition, It can also be used for the positive resist composition.

(C) A tertiary alkyl ester-type acid dissociable, dissolution inhibiting group that is directly bonded to the carboxy group of acrylic acid to form a tertiary alkyl ester, which is a monovalent aliphatic cyclic group, and A group having a group having a branched alkylene having a tertiary carbon atom bonded to.
Examples of the “group having a monovalent aliphatic cyclic group and a group having a branched alkylene having a tertiary carbon atom bonded thereto” include, for example, the formulas mentioned in the description of the structural unit (a1). Examples include groups represented by (2-1) to (2-6).
Such an acid dissociable, dissolution inhibiting group has a relatively high deprotection energy and is difficult to dissociate. Therefore, it is suitable for the second positive resist.

(D) A tertiary alkyl ester type acid dissociable, dissolution inhibiting group that is directly bonded to the carboxy group of acrylic acid to form a tertiary alkyl ester, and is an aliphatic branched group.
As the “aliphatic branched group”, for example, the aliphatic branched acid dissociable, dissolution inhibiting group mentioned as the tertiary alkyl ester type acid dissociable, dissolution inhibiting group in the description of the structural unit (a1). (For example, a group represented by the formula —C (R ⁷¹ ) (R ⁷² ) (R ⁷³ )).
Such an aliphatic branched acid dissociable, dissolution inhibiting group has a relatively high deprotection energy and is difficult to dissociate. Therefore, it is suitable for the second positive resist.

(E) A tertiary alkyl ester type acid dissociable, dissolution inhibiting group which is not directly bonded to the carboxy group of acrylic acid but bonded via a linking group.
Specifically, X ′ in the formula (a1-3) exemplified in the description of the structural unit (a1) can be given.
Such an acid dissociable, dissolution inhibiting group has a relatively low deprotection energy due to the presence of a linking group, compared to the case where a group having the same structure is directly bonded without a linking group. It's easy to do. Therefore, it is suitable for the first positive resist composition.

(F) Acetal type acid dissociable, dissolution inhibiting group.
Specific examples of the acetal type acid dissociable, dissolution inhibiting group include the same groups as those described in the description of the structural unit (a1).
The acetal type acid dissociable, dissolution inhibiting group has a relatively low deprotection energy and is easily dissociated.
For example, the deprotection energy of the adamantoxymethyl group is 8.4 [kcal / mol]. Therefore, it is suitable for the first chemically amplified resist.

(G) A polyfunctional acid dissociable, dissolution inhibiting group.
Examples of the polyfunctional acid dissociable, dissolution inhibiting group include those described in JP-A No. 2005-325325 (general formula: R— [O—CH ₂ ] _{m ″} — (wherein R has 20 or less carbon atoms). M ″ represents an organic group having a valence greater than or equal to m ″, and m ″ represents an integer of 2 to 5.)).
The polyfunctional acid dissociable, dissolution inhibiting group has a relatively low deprotection energy and is easily dissociated. Therefore, it is suitable for the first positive resist composition.

An acid dissociable, dissolution inhibiting group (hereinafter referred to as protective group 1) of the first positive resist composition and an acid dissociable, dissolution inhibiting group (hereinafter referred to as protective group 2) of the second positive resist composition. In particular, the following combinations are preferable.
[Combination 1]: The protecting group 1 is at least one selected from the group consisting of (a) and (e), and the protecting group 2 is (a).
[Combination 2]: The protecting group 1 is at least one selected from the group consisting of (a) and (e), and the protecting group 2 is (e).
[Combination 3]: The protecting group 1 is at least one selected from the group consisting of the above (a) and (b), and the protecting group 2 is the above (d).

  EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited by these examples.

(Preparation of cleaning liquid for lithography)
Alkylsulfonic acid having a linear alkyl group having an average carbon number of 15 was added to pure water so that 1300 ppm and monoethanolamine were 90 ppm, respectively, to prepare a cleaning liquid for lithography (pH 2.6 of the cleaning liquid). .
The pH of the cleaning liquid for lithography was measured at room temperature (25 ° C.) with a pH / ORP meter (product name “TPX-90Si”, manufactured by Toko Chemical Laboratory Co., Ltd.).

<Synthesis of base material component (A)>
In this example, the polymer compound (A1-2) used as the substrate component (A) was synthesized by the following polymer synthesis examples using compounds (1) to (5) represented by the following chemical formulas. Was obtained by
Compound (1) used in the polymer synthesis example was synthesized by the monomer synthesis example shown below.

[Monomer Synthesis Example 1: Synthesis of Compound (1)]
In a 500 ml three-necked flask, under a nitrogen atmosphere, 20 g (105.14 mmol) of alcohol (1), 30.23 g (157.71 mmol) of ethyldiisopropylaminocarbodiimide (EDCI) hydrochloride and 0.6 g of dimethylaminopyridine (DMAP) After adding 300 ml of a THF solution of (5 mmol), 16.67 g (115.66 mmol) of the precursor (1) was added under ice cooling (0 ° C.), and the mixture was stirred at room temperature for 12 hours.
After confirming disappearance of the raw material by thin layer chromatography (TLC), 50 ml of water was added to stop the reaction. The reaction solvent was concentrated under reduced pressure, and the organic layer obtained by extraction three times with ethyl acetate was washed with water, saturated sodium bicarbonate and 1N-HClaq in this order. The product obtained by distilling off the solvent under reduced pressure was dried to obtain compound (1).

The instrumental analysis result of the obtained compound (1) was as follows.
¹ H-NMR (CDCl ₃ , 400 MHz): δ (ppm) = 6.22 (s, 1H, H ^a ), 5.70 (s, 1H, H ^b ), 4.71-4.85 (m, 2H, H ^{c, d} ), 4.67 (s, 2H, H ^k ), 3.40-3.60 (m, 2H, H ^{e, f} ), 2.58-2.70 (m, 1H, ^{H g), 2.11-2.21 (m,} 2H, H h), 2.00 (s, 3H, H i), 1.76-2.09 (m, 2H, H j).
From the results described above, it was confirmed that the compound (1) had a structure shown below.

[Polymer Synthesis Example 1: Synthesis of Polymer Compound (A1-2)]
In a three-necked flask connected with a thermometer and a reflux tube, 11.77 g (69.23 mmol) of compound (2), 15.00 g (47.47 mmol) of compound (1), 16.58 g (63.29 mmol) Compound (3), 4.65 g (27.69 mmol) of Compound (4), 3.27 g (13.85 mmol) of Compound (5) were dissolved in 76.91 g of methyl ethyl ketone (MEK). To this solution, 22.1 mmol of dimethyl azobisisobutyrate (V-601) as a polymerization initiator was added and dissolved. The resultant was dropwise added to 42.72 g of MEK heated to 78 ° C. in a nitrogen atmosphere over 3 hours. After completion of dropping, the reaction solution was heated and stirred for 4 hours, and then the reaction solution was cooled to room temperature. The obtained reaction polymerization solution was dropped into a large amount of normal (n-) heptane, and the polymer was precipitated. The precipitated white powder was filtered, washed with a mixed solvent of n-heptane / isopropyl alcohol, and dried. As a result, 41 g of the target polymer compound (A1-2) was obtained.
With respect to this polymer compound (A1-2), the mass average molecular weight (Mw) in terms of standard polystyrene determined by GPC measurement was 7,000, and the molecular weight dispersity (Mw / Mn) was 1.56. The copolymer composition ratio (ratio (molar ratio) of each structural unit in the structural formula) determined by carbon 13 nuclear magnetic resonance spectrum (600 MHz — ¹³ C-NMR) is a2 / a0 / a11 / a12 / a3 = It was 35/22/18/13/12.

<Test example>
Each component shown in Table 1 was mixed and dissolved to prepare a chemically amplified positive resist composition.

Each abbreviation in Table 1 has the following meaning. Moreover, the numerical value in [] is a compounding quantity (mass part).
(A) -1: a copolymer having a mass average molecular weight (Mw) of 10,000 and a dispersity of 1.60 represented by the following chemical formula (A1-1). In the formula, the symbol at the lower right of () indicates the ratio (mol%) of the structural unit to which the symbol is attached, and is a1: a2: a3 = 35: 45: 20.

(B) -1: An acid generator comprising a compound represented by the following chemical formula (B1).
(B) -2: An acid generator composed of a compound represented by the following chemical formula (B2).
(B) -3: An acid generator composed of a compound represented by the following chemical formula (B3).

(D) -1: tri-n-pentylamine.
(E) -1: salicylic acid.
(S) -1: γ-butyrolactone.
(S) -2: Mixed solvent of PGMEA and PGME (PGMEA: PGME = 6: 4 (mass ratio)).

[Step (1)]
An organic antireflection film composition “ARC29” (trade name, manufactured by Brewer Science Co., Ltd.) is applied onto an 8-inch silicon wafer using a spinner, and baked on a hot plate at 205 ° C. for 60 seconds to be dried. Thus, an organic antireflection film having a film thickness of 82 nm was formed.
On the organic antireflection film, the resist composition (1-0) is applied using a spinner, prebaked (PAB) at 110 ° C. for 60 seconds on a hot plate, and dried. A resist film having a thickness of 100 nm was formed.
Next, a line-and-space with a line width of 120 nm / pitch of 240 nm is applied to the resist film using an ArF exposure apparatus NSR-S302 (manufactured by Nikon; NA (numerical aperture) = 0.60, 2/3 annular illumination). The resist film was selectively irradiated with an ArF excimer laser (193 nm) through a photomask (6% halftone) targeting the resist pattern (hereinafter referred to as “LS pattern”).
Then, a post-exposure heating (PEB) treatment was performed at 110 ° C. for 60 seconds, and a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution “NMD-3” (trade name, Tokyo Ohka Kogyo Co., Ltd.) at 23 ° C. For 30 seconds.
As a result, a line-and-space resist pattern (hereinafter referred to as “LS pattern (a)”) in which lines with a width of 120 nm are arranged at equal intervals (pitch 240 nm) was formed on the resist film. The optimum exposure amount Eop at which the LS pattern (a) was formed, that is, the sensitivity was determined to be 25.0 (mJ / cm ² ).

In forming the LS pattern (a), the photomask (6% halftone) was changed to a photomask (6% halftone) targeting the LS pattern having a line width of 130 nm / pitch of 260 nm. Pattern formation (exposure amount was 25.0 (mJ / cm ² ), the same as Eop) was performed.
As a result, an LS pattern (hereinafter referred to as “LS pattern (b)”) in which lines having a width of 130 nm are arranged at equal intervals (pitch: 260 nm) was formed on the resist film.

Further, in the formation of the LS pattern (a), pattern formation (exposure amount is the same as Eop) except that large area exposure was performed instead of using a photomask (6% halftone) targeting the LS pattern. The same 25.0 (mJ / cm ² )) was performed to form a large area pattern.

(Test Example 1: Cleaning with pure water, step (3), alkali development)
The LS pattern (a), the LS pattern (b), and the large area pattern were each washed with pure water. Specifically, “pure water” was cleaned by spraying (applying) “pure water” from the nozzle in a direction perpendicular to the silicon wafer for 30 seconds toward the entire pattern.
Next, each pattern after cleaning was hard baked at 140 ° C. for 60 seconds (step (3)).
Next, for each pattern after hard baking, an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution “NMD-3” (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is used at 23 ° C. for 30 seconds. Then, alkali development was performed, followed by rinsing with pure water for 15 seconds, followed by shaking and drying.
As a result, all the patterns remained on the organic antireflection film although slight film reduction was observed.

(Test Example 2: Step (2), Step (3), alkali development)
The LS pattern (a), the LS pattern (b), and the large area pattern were respectively cleaned using the lithography cleaning liquid (pH 2.6 of the cleaning liquid). Specifically, “the lithography cleaning liquid” was sprayed from the nozzle in a direction perpendicular to the silicon wafer for 30 seconds toward the entire pattern (step (2)).
Next, each pattern after cleaning was hard baked at 140 ° C. for 60 seconds (step (3)).
Next, for each pattern after hard baking, an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution “NMD-3” (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is used at 23 ° C. for 30 seconds. Then, alkali development was performed, followed by rinsing with pure water for 15 seconds, followed by shaking and drying.
As a result, all the patterns were dissolved in the TMAH aqueous solution and completely disappeared.

<Examples 1-2>
Each component shown in Table 2 was mixed and dissolved to prepare a first chemically amplified positive resist composition and a pattern reversal composition (chemically amplified positive resist composition).

Each abbreviation in Table 2 has the following meaning. Moreover, the numerical value in [] is a compounding quantity (mass part).
(A) -2: The polymer compound (A1-2).
(A) -3: a copolymer having a weight average molecular weight (Mw) of 12000 and a dispersity of 2.1 represented by the following chemical formula (A1′-1). In the formula, the symbol at the lower right of () indicates the ratio (mol%) of the structural unit to which the symbol is attached, and is a6 ′: a7 ′: a1 ′ = 65: 20: 15.

(B) -1: An acid generator comprising a compound represented by the following chemical formula (B1).
(B) -4: An acid generator composed of a compound represented by the following chemical formula (B4).

(B) -5: (4-Methylphenyl) diphenylsulfonium nonafluoro-n-butanesulfonate.
(D) -1: tri-n-pentylamine.
(E) -1: salicylic acid.
(F) -1: a fluorine-containing polymer compound (F1-1-1) synthesized in the same manner as Example 32 of US Patent Application Publication No. 2009/0197204. Mw: 18000, molecular weight dispersity: 1.5, f1 / f2 = 78/22 (molar ratio).

(S) -1: γ-butyrolactone.
(S) -3: A mixed solvent of PGMEA, PGME and cyclohexanone (CH) (PGMEA: PGME: CH = 45: 30: 25 (mass ratio)).
(S) -4: A mixed solvent of 1-butoxy-2-propanol (PGB) and PGMEA (PGB: PGMEA = 90: 10 (mass ratio)).

Example 1
[Step (1)]
An organic antireflection film composition “ARC29” (trade name, manufactured by Brewer Science Co., Ltd.) is applied onto an 8-inch silicon wafer using a spinner, and baked on a hot plate at 205 ° C. for 60 seconds to be dried. Thus, an organic antireflection film having a film thickness of 82 nm was formed.
On the organic antireflection film, the resist composition (1-1) is applied using a spinner, prebaked (PAB) at 110 ° C. for 60 seconds on a hot plate, and dried. A resist film (first resist film) having a thickness of 100 nm was formed.
Next, LS having a line width of 130 nm / pitch of 260 nm is applied to the first resist film by an ArF exposure apparatus NSR-S302 (manufactured by Nikon; NA (numerical aperture) = 0.60, 2/3 annular illumination). ArF excimer laser (193 nm) was selectively irradiated through a photomask (6% halftone) targeting the pattern.
Then, a post-exposure heating (PEB) treatment was performed at 95 ° C. for 60 seconds, and a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution “NMD-3” (trade name, Tokyo Ohka Kogyo Co., Ltd.) at 23 ° C. For 30 seconds.
As a result, an LS pattern (hereinafter referred to as “LS pattern (c)”) in which lines having a width of 130 nm are arranged at equal intervals (pitch: 260 nm) was formed on the first resist film. When the optimum exposure amount Eop at which the LS pattern (c) was formed, that is, the sensitivity was determined, it was 32.0 (mJ / cm ² ).

[Step (2)]
The LS pattern (c) was cleaned using the lithography cleaning liquid (pH of the cleaning liquid 2.6). Specifically, the cleaning was performed by spraying (coating) the “lithographic cleaning liquid” from the nozzle in a direction perpendicular to the silicon wafer for 30 seconds toward the entire pattern.

[Step (3)]
Next, hard baking was performed on the cleaned pattern at 140 ° C. for 60 seconds.

[Step (4)]
Next, the resist composition (2-1) is applied onto the organic antireflection film on which the LS pattern (c) has been formed using a spinner, and is heated on a hot plate at 90 ° C. for 60 seconds. By performing pre-baking (PAB) and drying, a resist film (pattern inversion film) having a film thickness of 120 nm was formed.
Next, alkali development was performed for 30 seconds at 23 ° C. using an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution “NMD-3” (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.).

  As a result, the line portion of the LS pattern (c) formed in the first resist film is dissolved and removed in the TMAH aqueous solution, and the pattern inversion film is formed in the space portion of the LS pattern (c). By forming the derived line, an inverted pattern of the LS pattern (c), that is, a space-and-line resist pattern (hereinafter referred to as “SL pattern”) having a space width of about 130 nm / pitch of about 260 nm was formed. .

(Example 2)
In the formation of the reversal pattern (SL pattern) of Example 1, the photomask (6% halftone) used in step (1) is a photomask (6% half) that targets an LS pattern with a line width of 120 nm / pitch of 300 nm. The pattern was formed in the same manner except that the tone was changed.

  As a result, the line portion of the LS pattern formed in the first resist film is dissolved and removed in the TMAH aqueous solution, and a line derived from the pattern inversion film is formed in the space portion of the LS pattern. As a result, an inverted pattern of the LS pattern, that is, an SL pattern having a space width of about 120 nm / pitch of about 300 nm was formed.

<Example 3>
Each component shown in Table 3 was mixed and dissolved to prepare a first chemically amplified positive resist composition and a pattern reversal composition.

Each abbreviation in Table 3 has the following meaning. Moreover, the numerical value in [] is a compounding quantity (mass part).
(A) -1: a copolymer having a mass average molecular weight (Mw) of 10,000 and a dispersity of 1.60 represented by the above chemical formula (A1-1). Ratio of constituent units (mol%) a1: a2: a3 = 35: 45: 20.
(A) -4: A copolymer having a mass average molecular weight (Mw) of 7000 and a dispersity of 1.60 represented by the following chemical formula (A1-3). In the formula, the symbol on the lower right of () indicates the ratio (mol%) of the structural unit to which the symbol is attached, and is a2: a1: a3: a5 ′ = 25: 45: 15: 15.
(A) -5: a copolymer having a mass average molecular weight (Mw) of 2600 and a dispersity of 2.00 represented by the following chemical formula (A ″ -1). Represents the ratio (mol%) of the structural units to which a6 ′: a7 ′ = 70: 30.

(B) -5: (4-Methylphenyl) diphenylsulfonium nonafluoro-n-butanesulfonate.
(B) -6: An acid generator comprising a compound represented by the following chemical formula (B5).

(D) -1: tri-n-pentylamine.
(E) -1: salicylic acid.
(S) -2: Mixed solvent of PGMEA and PGME (PGMEA: PGME = 6: 4 (mass ratio)).
(S) -5: 1-butoxy-2-propanol.
(S) -6: A mixed solvent of 4-methyl-2-pentanol (methyl isobutyl carbinol) and dibutyl ether (methyl isobutyl carbinol: dibutyl ether = 1: 9 (mass ratio)).

Example 3
[Step (1)]
An organic antireflection film composition “ARC29” (trade name, manufactured by Brewer Science Co., Ltd.) is applied onto an 8-inch silicon wafer using a spinner, and baked on a hot plate at 205 ° C. for 60 seconds to be dried. Thereby, an organic antireflection film having a film thickness of 89 nm was formed.
The resist composition (1-2) is applied onto the organic antireflection film using a spinner, and subjected to PAB at 120 ° C. for 60 seconds on a hot plate, followed by drying to obtain a film thickness of 100 nm. The resist film was formed.
Next, a photomask (6% halftone) targeting an LS pattern with a line width of 55 nm / pitch of 220 nm is applied to the resist film using an ArF exposure apparatus NSR-S308F (Nikon Corp .; NA = 0.92, Crosspore). ) Was selectively irradiated with an ArF excimer laser (193 nm).
Then, PEB treatment was performed under conditions of 110 ° C. for 60 seconds, and further a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution “NMD-3” (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) at 23 ° C. Then, it was alkali-developed under conditions for 30 seconds, and then rinsed with pure water for 30 seconds, followed by shake-off drying. Thereafter, a post-bake treatment at 150 ° C. for 60 seconds was further performed.
As a result, a 1: 3 LS pattern (hereinafter referred to as “LS pattern (d1)”) having a line width of 55 nm and a pitch of 220 nm was formed on the resist film.

The resist composition (1-3) is applied onto the silicon wafer in the space portion of the LS pattern (d1) using a spinner, and subjected to PAB at 120 ° C. for 60 seconds on a hot plate, followed by drying. As a result, a resist film having a thickness of about 100 nm was formed.
Next, with respect to the resist film having a film thickness of about 100 nm made of the resist composition (1-3), an ArF exposure apparatus NSR-S308F (manufactured by Nikon Corporation; NA = 0.92, Crosspore) through a mask pattern , ArF excimer laser (193 nm) was selectively irradiated.
Then, PEB treatment was performed at 90 ° C. for 60 seconds, and further at 23 ° C. using a 2.38 mass% TMAH aqueous solution “NMD-3” (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.) for 30 seconds. Alkali developed.
As a result, a line pattern having a line width of 55 nm (second LS pattern (d2) having a line width of 55 nm and a pitch of 220 nm of 1: 3) is newly formed in the center of the space portion of the LS pattern (d1). The LS pattern (d1) and the second LS pattern (d2) finally formed a 1: 1 LS pattern (d) having a line width of 55 nm and a pitch of 110 nm.

[Step (2)]
The LS pattern (d) was cleaned using the lithography cleaning liquid (pH of the cleaning liquid 2.6). Specifically, the “lithography cleaning liquid” was cleaned by spraying (coating) the silicon wafer from the direction perpendicular to the silicon wafer for 30 seconds toward the entire pattern, and then shaken and dried.

[Step (3)]
Next, hard baking was performed on the cleaned pattern at 140 ° C. for 60 seconds.

[Step (4)]
Next, the resist composition (2-2) is applied on the organic antireflection film on which the LS pattern (d) has been formed using a spinner, and is heated on a hot plate at 90 ° C. for 60 seconds. By performing PAB and drying, a 100 nm-thick resist film (pattern inversion film) was formed.
Next, alkali development was performed for 30 seconds at 23 ° C. using an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution “NMD-3” (trade name, manufactured by Tokyo Ohka Kogyo Co., Ltd.).

  As a result, the line portion of the LS pattern (d) is dissolved and removed in the TMAH aqueous solution, and a line derived from the pattern reversal film is formed in the space portion of the LS pattern (d). Then, an inverted pattern of the LS pattern (d), that is, an SL pattern having a space width of about 55 nm / pitch of about 110 nm was formed.

  DESCRIPTION OF SYMBOLS 1 ... Support body, 2 ... First resist film, 3 ... Photomask, 6 ... Pattern inversion film

Claims (12)

On the support, the first chemically amplified positive resist composition is applied to form a first resist film, the first resist film is exposed, post-exposure baking is performed, and alkali development is performed. Forming a resist pattern (1);
Cleaning the first resist pattern with an acidic lithography cleaning solution (2);
A step (3) of baking the first resist pattern after the cleaning;
On the support on which the first resist pattern is formed, a pattern reversal composition containing an organic solvent that does not dissolve the first resist film is applied to form a pattern reversal film, followed by alkali development. possess a step (4) to form a resist pattern by removing the first resist pattern by,
The cleaning solution for lithography, a pattern forming method comprising acidic solution der Rukoto containing a surfactant.   The pattern forming method according to claim 1, wherein the cleaning liquid for lithography has a pH of 4.5 or less. The pattern forming method according to claim 1 or 2, wherein the baking temperature is 100 ° C. or higher in the step (3). The said pattern reversal film | membrane is a pattern formation method as described in any one of Claims 1-3 which has lower alkali development solubility than the 1st resist pattern after the said process (3). The first chemically amplified positive resist composition contains an acid generator component (B) that generates an acid upon exposure and a base material component (A) having an acid dissociable, dissolution inhibiting group,
The pattern reversal composition contains an acid generator component (B ′) that generates an acid upon exposure and a base material component (A ′) having an acid dissociable, dissolution inhibiting group,
Said base component (A ') is any of claims 1-4 wherein the base component (A) deprotection energy than the acid dissociable, dissolution inhibiting group contained in those having a high acid dissociable dissolution inhibiting group The pattern forming method according to claim 1. The first chemically amplified positive resist composition contains an acid generator component (B) that generates an acid upon exposure and a base material component (A) having an acid dissociable, dissolution inhibiting group,
The pattern reversal composition contains an acid generator component (B ′) that generates an acid upon exposure and a base material component (A ″) that does not have an acid dissociable, dissolution inhibiting group. 5. The pattern forming method according to any one of 4 above. The pattern formation method of Claim 5 or 6 in which the said base material component (A) contains the resin component (A1) which has the structural unit (a1) induced | guided | derived from the acrylate ester containing an acid dissociable dissolution inhibiting group. The resin component (A1) is further a structural unit derived from an acrylate ester containing a —SO ₂ — containing cyclic group and a structural unit derived from an acrylate ester containing a lactone-containing cyclic group The pattern formation method of Claim 7 which has at least 1 type of structural unit selected from the group which consists of (a2). The pattern formation method according to claim 7 or 8, wherein the resin component (A1) further has a structural unit (a3) derived from an acrylate ester containing a polar group-containing aliphatic hydrocarbon group. The organic solvent which does not dissolve the first resist film, any claim 1-9 is at least one selected from the group consisting of an alcoholic solvent, ether-based organic solvent having no fluorine organic solvent and a hydroxyl group The pattern forming method according to claim 1. The pattern formation method according to any one of claims 1 to 10 , wherein the first resist pattern includes a line pattern and / or a dot pattern. The pattern formation according to any one of claims 1 to 11, wherein the first resist pattern is a resist pattern formed by performing patterning using a chemically amplified positive resist composition at least twice. Method.

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