JP5619939B2 - Pattern transfer method - Google Patents

Description

  The present invention relates to a pattern transfer method in which a fine pattern is transferred onto a surface of a transfer target by being pressed against the transfer target.

  Conventionally, a photolithography technique has been often used as a technique for processing a fine pattern required for a semiconductor device or the like. However, as the pattern becomes finer and the required processing dimensions become as small as the wavelength of light used for exposure, it is difficult to cope with the photolithography technique. Therefore, instead of this, an electron beam drawing apparatus, which is a kind of charged particle beam apparatus, has come to be used.

  Unlike the batch exposure method in pattern formation using a light source such as i-line or excimer laser, the pattern formation using the electron beam employs a method of directly drawing a mask pattern. Therefore, the exposure (drawing) time increases as the pattern to be drawn increases, and it takes time to complete the pattern. As the degree of integration of the semiconductor integrated circuit increases, the time required for pattern formation increases. There is a concern that the throughput will decrease.

  Therefore, in order to increase the speed of the electron beam lithography system, development of a collective figure irradiation method that combines various shapes of masks and forms an electron beam with a complex shape by irradiating them with an electron beam in a lump. It is being advanced. However, while miniaturization of patterns has progressed, there has been a drawback that the cost of the apparatus becomes high, such as an increase in the size of the electron beam drawing apparatus and high-precision control of the mask position.

  On the other hand, a nanoimprint technique is known as a technique for performing highly accurate pattern formation at a low cost. In this nanoimprint technology, a stamper on which unevenness (surface shape) corresponding to the unevenness of a pattern to be formed is impressed on a transfer object obtained by forming a resin layer on a predetermined substrate, for example. Yes, a fine pattern can be formed on the resin layer of the transfer object. This nanoimprint technology is being studied for application to the formation of recording bit patterns on large-capacity recording media and the formation of semiconductor integrated circuit patterns.

  At present, hard stampers such as quartz that have been used in the conventional nanoimprint technology cannot follow the warp and protrusions of the substrate to be transferred during transfer, and there is a problem that a defective transfer region occurs in a wide range. In order to reduce the defective transfer area, it is necessary to absorb both the warp and the protrusion of the substrate. Therefore, a flexible resin stamper that follows both the warp and the protrusion of the substrate has been studied (Non-Patent Document 1). Furthermore, there is a report example of a multilayer type resin stamper having a flexible resin layer called a buffer layer between a base material and a fine structure layer (Non-patent Document 2). Further, in the nanoimprint technology, the separation between the transfer object and the fine structure layer greatly affects the transfer accuracy, and therefore the releasability of both is very important. Conventionally, a stamper such as quartz used for nanoimprint imparts releasability by treating the surface with a fluorine-based release agent (Patent Document 1). Currently, the same mold release treatment is applied to the surface of the soft stamper and used for transfer.

JP 2004-351893 A Hong H. Lee, Chem. Mater., Vol.16, p.5000 (2004) B. Michel et al., Macromolecules, vol.33, p.3042 (2000)

  However, the above-described conventional stamper has problems that the pattern accuracy is likely to be lowered due to the uneven thickness of the applied release agent, and that the release layer deteriorates with repeated transfer, resulting in a transfer failure.

  Therefore, an object of the present invention is to provide a pattern transfer method using a fine pattern transfer stamper having a fine structure layer capable of improving the continuous transfer property of a resin stamper and capable of continuous transfer with high accuracy.

  The present invention for solving the above-described problems is directed to pressing the stamper having a microstructure layer formed with a concavo-convex pattern against a photocurable resin material on a substrate to be transferred, thereby curing the photocurable resin material. In the pattern transfer method for transferring the uneven pattern of the stamper to a curable resin material, a silsesquioxane derivative having a curing mechanism different from the curing mechanism of the photocurable resin material is mainly used as the microstructure layer of the stamper. Using the polymer of the resin composition as a component, the uneven pattern of the stamper is transferred to the photocurable resin material.

  ADVANTAGE OF THE INVENTION According to this invention, the pattern transfer method using the stamper for fine pattern transfer which has the fine structure layer which improves the continuous transfer property of a resin stamper and can perform continuous transfer with high precision can be provided.

(A) is a schematic diagram showing a stamper for fine pattern transfer according to an embodiment of the present invention, (b) is a partially enlarged view of a support substrate in the stamper for fine pattern transfer of (a), and (c) is ( It is a figure which shows the modification of the support base material of b). (A) to (c) are process explanatory views schematically showing a method of manufacturing a fine pattern transfer stamper. FIG. 5 is a schematic diagram illustrating a state in which a fine pattern of a fine pattern transfer stamper is transferred to a transfer target.

Next, embodiments of the present invention will be described in detail with reference to the drawings as appropriate. FIG. 1A is a schematic diagram showing a fine pattern transfer stamper according to an embodiment of the present invention, and FIG. 1B is a partially enlarged view of a support substrate in the fine pattern transfer stamper of FIG. FIG.1 (c) is a figure which shows the modification of the support base material of FIG.1 (b).
Hereinafter, after describing the stamper for fine pattern transfer, a pattern transfer method using this stamper will be described.

(Fine pattern transfer stamper)
As shown in FIG. 1A, the fine pattern transfer stamper 3 according to this embodiment has a fine structure layer 2 on a support base 1. Here, the fine structure refers to a structure formed on the order of nanometers to micrometers.

  The support substrate 1 is not particularly limited in material, size, and manufacturing method as long as it has a function of holding the microstructure layer 2. As a material of the support base material 1, what has intensity | strength and workability should just be mentioned, such as a silicon wafer, various metal materials, glass, quartz, a ceramic, resin, for example. Specifically, Si, SiC, SiN, polycrystalline Si, Ni, Cr, Cu, and those containing one or more of these are exemplified. In particular, quartz and glass are highly transparent, and the microstructure layer 2 and the buffer layer (not shown) that may be disposed between the microstructure layer 2 and the support substrate 1 are made of a photocurable material. In this case, the resin is preferably irradiated with light efficiently.

Specific examples of the resin include, for example, phenol resin (PF), urea resin (UF), melamine resin (MF), polyethylene terephthalate (PET), unsaturated polyester resin (UP), alkyd resin, vinyl ester resin, Epoxy resin (EP), polyimide resin (PI), polyurethane (PUR), polycarbonate (PC), polystyrene (PS), acrylic resin (PMMA), polyamide resin (PA), ABS resin, AS resin, AAS resin, polyvinyl alcohol , Polyethylene (PE), polypropylene (PP), polytetrafluoroethylene (PTFE), polyarylate resin, cellulose acetate, polypropylene, polyethylene naphthalate (PEN), polybutylene terephthalate (PBT), polyphenylene sulfide PPS), polyphenylene oxide, cycloolefin polymer, polylactic acid, silicone resin, diallyl phthalate resin and the like. Any of these may be used alone, or a plurality of different resins may be mixed and used. Moreover, fillers, such as an inorganic filler and an organic filler, may be included.
Further, the support base 1 may have a flexible resin layer called a buffer layer (not shown) between the microstructure layer 2. And in order to strengthen the adhesive force of the fine structure layer 2 and the buffer layer, the coupling process may be given to the surface of the buffer layer.

The support substrate 1 may be made of a single material or may be made of a plurality of materials.
The support base material 1 shown in FIG. 1B includes a first hard layer 1a, a first soft layer 1b, a second hard layer 1c, and a second soft layer 1d in this order. The elastic modulus of the first soft layer 1b and the second soft layer 1d is smaller than the elastic modulus of the first hard layer 1a and the second hard layer 1c. Incidentally, the fine structure layer 2 is formed on the surface of the second soft layer 1d. Each of the first soft layer 1b and the second soft layer 1d, and the first hard layer 1a and the second hard layer 1c is made of the above-described material so as to satisfy the above-described elastic modulus relationship. You can select and configure.

Moreover, the support base material 1 may be other forms composed of two or more types of layers having different elastic moduli, and the support base material 1 shown in FIG. 1C is a first hard layer 1a. The soft layer 1e and the second hard layer 1c are provided in this order, and the elastic modulus of the soft layer 1e is smaller than the elastic modulus of the first hard layer 1a and the second hard layer 1c.
In addition, the support base material 1 in this invention does not specifically limit a layer number, an order, and a structure, without providing a distinction in the order and combination of a hard layer and a soft layer, and the layer by which the fine structure layer 2 is arrange | positioned.

  The microstructure layer 2 is formed of a polymer (cured product) of a resin composition containing a silsesquioxane derivative having a plurality of polymerizable functional groups as a main component. As a content rate of the silsesquioxane derivative in a resin composition, 80 mass% or more is desirable.

  The polymerizable functional group of the silsesquioxane derivative (monomer) preferably has three or more.

  The polymerizable functional group is preferably at least one selected from a vinyl group, an epoxy group, an oxetanyl group, a vinyl ether group, and a (meth) acryl group.

  Such a silsesquioxane derivative is different in the curing mechanism of the curable resin material selected by the transfer method described later using the fine pattern transfer stamper of the present invention and the curing mechanism of the silsesquioxane derivative. desirable. Specifically, when the curable resin material for transfer is radically polymerizable, a photocationically polymerizable silsesquioxane derivative is desirable, and conversely, the curable resin material for transfer is photocationically polymerized. If it is, the photopolymerizable silsesquioxane derivative is desirable.

The resin composition forming the fine structure layer 2 may contain another curable resin in addition to the silsesquioxane derivative as the main component.
As the other curable resin here, a resin monomer that is cured by the same mechanism as the polymerizable functional group of the silsesquioxane derivative is desirable.

  Other curable resins having an epoxy group include, for example, bisphenol A type epoxy resins, hydrogenated bisphenol A type epoxy resins, bisphenol F type epoxy resins, novolac type epoxy resins, aliphatic cyclic epoxy resins, and naphthalene type epoxy resins. Biphenyl type epoxy resin, bifunctional alcohol ether type epoxy resin, and the like.

  Examples of other curable resins having an oxetanyl group include 3-ethyl-3-hydroxymethyloxetane, 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, 3-ethyl-3- (Phenoxymethyl) oxetane, di [1-ethyl (3-oxetanyl)] methyl ether, 3-ethyl-3- (2-ethylhexyloxymethyl) oxetane, 3-ethyl-3-{[3- (triethoxysilyl) ) Propoxy] methyl} oxetane, oxetanylsilsesquioxane, phenol novolac oxetane and the like.

  Examples of other curable resins having a vinyl ether group include ethylene glycol divinyl ether, diethylene glycol divinyl ether, triethylene glycol divinyl ether, tetraethylene glycol divinyl ether, butanediol divinyl ether, hexanediol divinyl ether, and cyclohexanedimethanol divinyl ether. , Di (4-vinyloxy) butyl isophthalate, di (4-vinyloxy) butyl glutarate, di (4-vinyloxy) butyl trimethylolpropane trivinyl ether, 2-hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, hydroxyhexyl vinyl ether Etc.

  As mentioned above, although the organic component which has any functional group of an epoxy group, an oxetanyl group, and a vinyl ether group was illustrated, this invention is not limited to this. Any polymer having a polymerizable functional group such as an epoxy group, oxetanyl group, or vinyl ether group in the molecular chain can be basically used in the present invention.

Moreover, it is desirable that the resin composition forming the fine structure layer 2 further contains a photo-curing polymerization initiator.
The photocuring polymerization initiator is appropriately selected according to the silsesquioxane derivative contained in the resin composition or the polymerizable functional group of another curable resin. In particular, the cationic polymerization initiator is desirable in terms of preventing poor curing due to oxygen inhibition.
The cationic polymerization initiator is not particularly limited as long as it is an electrophile and has a cation generation source and can cure organic components by heat or light, and a known cationic polymerization initiator should be used. Can do. In particular, a cationically polymerizable catalyst that initiates curing with ultraviolet rays is desirable because it allows formation of a concavo-convex pattern at room temperature and allows for more accurate replica formation from a master mold.

Examples of the cationic polymerizable catalyst include iron-allene complex compounds, aromatic diazonium salts, aromatic iodonium salts, aromatic sulfonium salts, pyridinium salts, aluminum complexes / silyl ethers, protonic acids, Lewis acids, and the like.
In addition, specific examples of the cationic polymerization catalyst that starts curing by ultraviolet rays include IRGACURE261 (Ciba Geigy), Optmer SP-150 (Asahi Denka Kogyo), Optomer SP-151 (Asahi Denka Kogyo), Optomer SP-152 (Asahi Denka Kogyo), Optomer SP-170 (Asahi Denka Kogyo), Optomer SP-171 (Asahi Denka Kogyo), Optomer SP-172 (Asahi Denka Kogyo), UVE-1014 (Manufactured by General Electronics Co., Ltd.), CD-1012 (manufactured by Sartomer), Sun-Aid SI-60L (manufactured by Sanshin Chemical Industry Co., Ltd.), Sun-Aid SI-80L (manufactured by Sanshin Chemical Industry Co., Ltd.), Sun-Aid SI-100L (manufactured by Sanshin Chemical) Industrial Co., Ltd.), Sun-Aid SI-110 (manufactured by Sanshin Chemical Industry Co., Ltd.), Sun-Aid SI-180 (manufactured by Sanshin Chemical Industrial Co., Ltd.), CI-2064 (manufactured by Nippon Soda Co., Ltd.), CI-2639 (manufactured by Nippon Soda Co., Ltd.) , CI-2624 (Nippon Soda Co., Ltd.), CI-2481 (Nippon Soda Co., Ltd.), Uvacure 159 0 (manufactured by Daicel UCB), Uvacure 1591 (manufactured by Daicel UCB), RHODORSIL Photo InItiator 2074 (manufactured by Rhone-Poulenc), UVI-6990 (manufactured by Union Carbide), BBI-103 (manufactured by Midori Chemical), MPI -103 (Midori Chemical Co., Ltd.), TPS-103 (Midori Chemical Co., Ltd.), MDS-103 (Midori Chemical Co., Ltd.), DTS-103 (Midori Chemical Co., Ltd.), DTS-103 (Midori Chemical Co., Ltd.), NAT -103 (manufactured by Midori Chemical Co., Ltd.), NDS-103 (manufactured by Midori Chemical Co., Ltd.), CYRAURE UVI6990 (manufactured by Union Carbide Japan Co., Ltd.) and the like. These polymerization initiators can be applied alone, but can also be used in combination of two or more. In addition, it can also be applied in combination with known polymerization accelerators and sensitizers.

Such a resin composition is desirably a resin in which all of the components except the photo-curing polymerization initiator have a polymerizable functional group.
However, even if a solvent component that does not have a reactive functional group that is unintentionally mixed in by the production process is contained in the resin composition, the effect of the present invention is not inhibited. In addition, the resin composition may contain a surfactant for enhancing the adhesion between the support substrate 1 and the resin composition as long as the problems of the present invention are not impaired. Moreover, you may add additives, such as a polymerization inhibitor, as needed.

  In the fine pattern transfer stamper 3 as described above, the support substrate 1 and the fine structure layer 2 are desirably formed so as to be light transmissive (for example, ultraviolet light transmissive). According to such a fine pattern transfer stamper 3, a photo-curable resin can be used for the curable resin material 6 (see FIG. 3) of the transfer target described later. That is, this fine pattern transfer stamper 3 can be used as a replica mold for optical nanoprinting.

  Next, a method for manufacturing the fine pattern transfer stamper 3 according to this embodiment will be described. 2A to 2C referred to here are process explanatory views schematically showing a method for manufacturing a fine pattern transfer stamper.

  First, in this manufacturing method, as shown in FIG. 2A, a master mold 4 on which a fine pattern 4a is formed is prepared. On the other hand, a resin composition 2 a containing the silsesquioxane derivative as a main component is applied onto the support substrate 1.

  Next, as shown in FIG.2 (b), the master mold 4 in which the fine pattern 4a was formed is pressed on the resin composition 2a. And the fine pattern 4a of the master mold 4 is transcribe | transferred to the resin composition 2a by hardening the resin composition 2a in the state which pressed the master mold 4. FIG. Incidentally, hardening of this resin composition 2a should just be performed by light irradiation, heating, and these combination.

  And as shown in FIG.2 (c), the fine structure layer 2 is formed on the support base material 1 by peeling the master mold 4 from the hardened resin composition 2a (refer FIG.2 (b)). Thus, the fine pattern transfer stamper 3 according to the present embodiment is obtained.

(Pattern transfer method)
Next, a fine pattern transfer method using the fine pattern transfer stamper 3 will be described. FIG. 3 is a schematic diagram showing a state in which a fine pattern of a fine pattern transfer stamper is transferred to a transfer target.
In this transfer method, as shown in FIG. 3, a transfer body 5 in which a curable resin material 6 is provided on a transfer substrate 7 is used.

  There is no restriction | limiting in particular as the to-be-transferred substrate 7, According to the use of the fine structure obtained by transferring a fine pattern, it can set suitably, for example, a silicon wafer, various metal materials, glass, for example , Quartz, ceramic, resin and the like.

  Examples of the curable resin material 6 include a photocurable resin, a thermosetting resin, and a thermoplastic resin. In addition, when using at least any one of a photocurable resin and a thermosetting resin as the curable resin material 6, as described above, the silsesquioxane derivative that is the main component of the resin composition described above is used. A photocurable resin and a thermosetting resin having a curing mechanism different from the curing mechanism are desirable.

  In this transfer method, the fine pattern transfer stamper 3 is embossed on the curable resin material 6 of the transfer body 5, whereby the fine pattern 4 a is transferred to the curable resin material 6 to obtain a fine structure. As described above, the support substrate 1 and the fine structure layer 2 of the fine pattern transfer stamper 3 are formed so that light having a wavelength of 365 nm or more can be transmitted. A curable resin can be used.

According to the fine pattern transfer stamper 3 according to the present embodiment as described above, the fine structure layer 2 formed of a polymer (cured product) of a resin composition mainly composed of a silsesquioxane derivative is provided. Since it has on the support base material 1, it does not require a mold release process with respect to the to-be-transferred body 5, and can perform continuous transfer with high precision. At this time, the fine pattern transfer stamper 3 is further releasable by forming the microstructure layer 2 with a silsesquioxane derivative having a curing mechanism different from the curing mechanism of the curable resin material 6 of the transfer target 5. Excellent.
As described above, the fine pattern transfer stamper 3 capable of improving the continuous transfer property without requiring a mold release treatment can reduce the running cost at the time of manufacturing the fine structure.

Next, the present invention will be described more specifically with reference to examples. Unless otherwise indicated, “part” and “%” used in the following description are based on mass.
Example 1
First, 1 part of a silsesquioxane derivative OX-SQ SI-20 (manufactured by Toagosei Co., Ltd.) having a plurality of oxetanyl groups and Adekaoptomer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) 0 as a cationic polymerization initiator 0.06 part was prepared and the photocurable resin composition of the microstructure layer was prepared.

  Next, as a supporting substrate, a supporting substrate having a surface of 20 mm × 20 mm and a thickness of 0.7 mm was prepared by coupling with KBM403 (manufactured by Shin-Etsu Silicone). A resin composition to be a fine structure layer was dropped onto the coupling-treated surface of the support substrate. Next, a quartz master mold in which a hole pattern of 180 nmφ, pitch 180 nm, and height 200 nm is formed on the surface subjected to mold release treatment by OPTOOL DSX (manufactured by Daikin Industries) is pressed against the photocurable resin composition. Then, ultraviolet rays with a wavelength of 365 nm were irradiated for 120 seconds. Next, the master mold was peeled from the cured photocurable resin composition to form a fine structure layer, and a stamper for fine pattern transfer of the present invention was produced. Continuous transfer was performed using this fine pattern transfer stamper. A glass substrate was used as the transfer substrate, and a photo-radically polymerizable resin composition containing an acrylate monomer as a main component was used as the transfer substrate. The pattern shape of the fine structure layer after the 50th transfer was measured with an atomic force microscope (manufactured by Beco), and an error from the pattern of the fine structure layer before the transfer was evaluated. The maximum dimensional error in the height direction is about 3%, and high-precision continuous transfer using a fine pattern transfer stamper was possible without a release process.

(Example 2)
A fine pattern transfer stamper having a fine structure layer was produced in the same manner as in Example 1. At this time, 1 part of silsesquioxane derivative Q-4OG (manufactured by Toagosei Co., Ltd.) having 8 epoxy groups and 0.06 part of Adekaoptomer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) as a cationic polymerization initiator Was prepared to prepare a photocurable resin composition having a fine structure layer. Using this photo-curable resin composition, a fine pattern transfer stamper was prepared in the same manner as in Example 1, and continuous transfer was performed and evaluated by AFM. The maximum dimension error in the height direction of the fine structure pattern after 50 times of continuous transfer was 3%, and high-precision continuous transfer with a fine pattern transfer stamper was possible without a mold release process.

Example 3
A fine pattern transfer stamper having a fine structure layer was produced in the same manner as in Example 1. At this time, 1 part of a silsesquioxane derivative Tris [(epoxypropoxypropyl) dimethylsilyloxy] -POSS (ALDRICH) having three cationically polymerizable epoxy groups and a photocation polymerization initiator, Adekaoptomer SP-172 (Asahi Denka Kogyo) 0.06 part (made by company) was prepared and it was set as the photocurable resin composition. Using this photo-curable resin composition, a resin stamper was produced by the same method as in Example 1, and continuous transfer was performed and evaluated by AFM. The maximum dimension error in the height direction of the fine structure pattern after 50 times of continuous transfer was 3%, and high-precision continuous transfer with a fine pattern transfer stamper was possible without a mold release process.

Example 4
A fine pattern transfer stamper having a fine structure layer was produced in the same manner as in Example 1. At this time, 90 parts of a silsesquioxane derivative having 8 photocationically polymerizable epoxy groups, 10 parts of polydimethylsiloxane having 2 photocationically polymerizable epoxy groups, and adekatop which is a photocationic polymerization initiator 6 parts of Mer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) was blended to prepare a photocurable resin composition. Using this photo-curable resin composition, a fine pattern transfer stamper was prepared in the same manner as in Example 1, and was continuously transferred and evaluated by AFM. The maximum dimension error in the height direction of the fine structure pattern after 50 times of continuous transfer was 3%, and high-precision continuous transfer with a fine pattern transfer stamper was possible without a mold release process.

(Example 5)
A fine pattern transfer stamper having a fine structure layer was produced in the same manner as in Example 1. In this case, 90 parts of a silsesquioxane derivative having 8 photocationically polymerizable epoxy groups and Epicoat 828 (produced by Japan Epoxy Resin Co., Ltd.) which is a bisphenol A type epoxy resin having 2 photocationically polymerizable epoxy groups. 10 parts and 6 parts of Adekaoptomer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) which is a photocationic polymerization initiator were prepared to obtain a photocurable resin composition. Using this photo-curable resin composition, a fine pattern transfer stamper was prepared in the same manner as in Example 1, and was continuously transferred and evaluated by AMF. The maximum dimensional error in the height direction of the fine structure pattern after 50 times of continuous transfer was 3%, and high-precision continuous transfer with a fine pattern transfer stamper was possible without a release process.

(Example 6)
1 part of silsesquioxane derivative OX-SQ SI-20 (manufactured by Toagosei Co., Ltd.) having a plurality of oxetanyl groups and Adekaoptomer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) 0.06 as a cationic polymerization initiator The part was prepared and the photocurable resin composition of the microstructure layer was produced. Further, as a support base material, a support base material having a surface of 20 mm × 20 mm and a thickness of 0.7 mm was prepared by coupling with KBM403 (manufactured by Shin-Etsu Silicone Co., Ltd.). A resin composition that becomes a fine structure layer is dropped on a quartz master mold having a hole pattern of 180 nmφ, 180 nm pitch, and 200 nm height formed on the surface that has been released by OPTOOL DSX (manufactured by Daikin Industries). Then, after spin coating, it was cured by irradiation with ultraviolet rays to form a fine structure layer.

  Next, after the highly elastic support base material subjected to the coupling treatment to be the first support layer (second hard layer) was pressed, it was cured by irradiation with ultraviolet rays to form the first support layer. A resin having an elastic modulus different from that of the resin used for the microstructure layer, a low-elastic epoxy resin serving as a second support layer (soft layer) is dropped, and after spin coating, cured by irradiation with ultraviolet rays. A support layer was formed. After pressing the high-elasticity support substrate that has been subjected to the coupling treatment to be the third support layer (first hard layer), it is cured by irradiation with ultraviolet rays to form the third support layer, and the first support layer and the second support layer. A support substrate composed of a layer and a third support layer was formed.

  Next, the fine structure layer, the first support layer, the second support layer, and the third support layer made of the cured photocurable resin composition are peeled off from the master mold, and the stamper for transferring a micropattern of the present invention is produced. did. Continuous transfer was performed using the produced fine pattern transfer stamper. A glass substrate was used as the transfer substrate, and a photo-radically polymerizable resin composition containing an acrylate monomer as a main component was used as the transfer substrate. The pattern shape of the fine structure layer after the 50th transfer was measured with an atomic force microscope (manufactured by Beco), and an error from the pattern of the fine structure layer before the transfer was evaluated. The maximum dimensional error in the height direction is about 3%, and high-precision continuous transfer using a fine pattern transfer stamper was possible without a mold release process.

(Example 7)
1 part of silsesquioxane derivative OX-SQ SI-20 (manufactured by Toagosei Co., Ltd.) having a plurality of oxetanyl groups and Adekaoptomer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) 0.06 as a cationic polymerization initiator The part was prepared and the photocurable resin composition of the microstructure layer was produced. Further, as a support base material, a support base material having a surface of 20 mm × 20 mm and a thickness of 0.7 mm was prepared by coupling with KBM403 (manufactured by Shin-Etsu Silicone Co., Ltd.). A resin composition that becomes a fine structure layer is dropped on a quartz master mold having a hole pattern of 180 nmφ, 180 nm pitch, and 200 nm height formed on the surface that has been released by OPTOOL DSX (manufactured by Daikin Industries). Then, after spin coating, it was cured by irradiation with ultraviolet rays to form a fine structure layer.

  Next, a resin having an elastic modulus different from that of the resin used for the fine structure layer is dropped, and a low-elastic epoxy resin to be a first support layer (second soft layer) is dropped and irradiated with ultraviolet rays after spin coating. And cured to form a first support layer. A highly elastic support base material subjected to coupling treatment to be the second support layer (second hard layer) was pressed, and then cured by irradiation with ultraviolet rays to form a second support layer. Next, an unsaturated polyester resin to be a third support layer (first soft layer) was dropped, and after spin coating, it was cured by irradiation with ultraviolet rays to form a third support layer. Next, a high-elasticity support base material subjected to a coupling process to be a fourth support layer (first hard layer) was pressed and then cured by irradiation with ultraviolet rays to form a fourth support layer.

  The fine structure layer, the first support layer, the second support layer, the third support layer, and the fourth support layer made of the cured photocurable resin composition are peeled off from the master mold, and the fine pattern transfer of the present invention is performed. A stamper was produced. Continuous transfer was performed using the produced fine pattern transfer stamper. A glass substrate was used as the transfer substrate, and a photo-radically polymerizable resin composition containing an acrylate monomer as a main component was used as the transfer substrate. The pattern shape of the fine structure layer after the 50th transfer was measured with an atomic force microscope (manufactured by Beco), and an error from the pattern of the fine structure layer before the transfer was evaluated. The maximum dimensional error in the height direction is about 2%, and high-precision continuous transfer with a fine pattern transfer stamper was possible without a release process.

(Example 8)
1 part of silsesquioxane derivative OX-SQ SI-20 (manufactured by Toagosei Co., Ltd.) having a plurality of oxetanyl groups and 0.06 part of Adekaoptomer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) as a cationic polymerization initiator Was prepared to prepare a photocurable resin composition having a fine structure layer. Further, as a support base material, a support base material having a surface of 20 mm × 20 mm and a thickness of 0.7 mm was prepared by coupling with KBM403 (manufactured by Shin-Etsu Silicone Co., Ltd.). A resin composition that becomes a fine structure layer is dropped on a quartz master mold having a hole pattern of 180 nmφ, 180 nm pitch, and 200 nm height formed on the surface that has been released by OPTOOL DSX (manufactured by Daikin Industries). Then, after spin coating, it was cured by irradiation with ultraviolet rays to form a fine structure layer.

  Next, a resin having an elastic modulus different from that of the resin used for the microstructure layer is dropped, and a low-elasticity epoxy resin that becomes the first support layer (soft layer) is dropped to become the second support layer (hard layer). After pressing the high-elasticity support substrate subjected to the coupling treatment, it was cured by irradiation with ultraviolet rays to form a support substrate composed of a first support layer and a second support layer.

  Next, the first support layer, the second support layer, and the fine structure layer made of the cured photo-curable resin composition were peeled from the master mold, and a fine pattern transfer stamper of the present invention was produced. Continuous transfer was performed using the produced fine pattern transfer stamper. A glass substrate was used as the transfer substrate, and a photo-radically polymerizable resin composition containing an acrylate monomer as a main component was used as the transfer substrate. The pattern shape of the fine structure layer after the 50th transfer was measured with an atomic force microscope (manufactured by Beco), and an error from the pattern of the fine structure layer before the transfer was evaluated. The maximum dimensional error in the height direction is about 3%, and high-precision continuous transfer using a fine pattern transfer stamper was possible without a mold release process.

(Comparative Example 1)
A fine pattern transfer stamper having a fine structure layer was produced in the same manner as in Example 1. At this time, 1 part of a silsesquioxane derivative having 8 radical polymerizable acrylate groups and 0.03 part of DAROCURE 1173 (manufactured by Ciba) as a radical photopolymerization initiator were used as a photocurable resin composition. Although continuous transferability was evaluated in the same manner as in Example 1, the fine pattern transfer stamper could not be peeled off from the transfer target, and the fine structure could not be transferred.

(Comparative Example 2)
A fine pattern transfer stamper having a fine structure layer was produced in the same manner as in Example 1. At that time, bifunctional polydimethylsiloxane and adekatopomer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) which is a photocationic polymerization initiator as a cationic polymerization initiator were prepared, and a photocurable resin composition for the pattern layer was prepared. It was. When an attempt was made to evaluate the continuous transferability by the same method as in Example 1, the transfer of the fine structure could not be confirmed on the transferred object at the 20th continuous transfer. At the same time, pattern breakage of the fine structure layer of the stamper was observed after 20 consecutive transfers. Further, the pattern height of the transferred object at the 10th transfer increased by 10 to 20% compared to the non-transferred object at the first transfer, and transfer could not be performed with high accuracy.

(Comparative Example 3)
A fine pattern transfer stamper having a fine structure layer was produced in the same manner as in Example 1. At this time, 75 parts of a silsesquioxane derivative having 8 photocationically polymerizable epoxy groups, 25 parts of polydimethylsiloxane having 2 photocationically polymerizable epoxy groups, and adekatop as a photocationic polymerization initiator 6 parts of Mer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) was blended to prepare a photocurable resin composition. When an attempt was made to evaluate the continuous transferability by the same method as in Example 1, the transfer of the fine structure could not be confirmed on the transferred object at the 20th continuous transfer. At the same time, pattern buckling of the microstructure layer of the stamper was observed after 20 consecutive transfers. Further, the pattern height of the transferred object at the 10th transfer increased by 10 to 20% compared to the non-transferred object at the first transfer, and transfer could not be performed with high accuracy. Further, transfer defects are confirmed in a wide range, and the fine structure layer is destroyed after about 10 continuous transfers.

(Comparative Example 4)
A fine pattern transfer stamper having a fine structure layer was produced in the same manner as in Example 1. At this time, 75 parts of a silsesquioxane derivative having 8 photocationically polymerizable epoxy groups and Epicoat 828 (produced by Japan Epoxy Resin Co., Ltd.), which is a bisphenol A type epoxy resin having 2 photocationically polymerizable epoxy groups. 25 parts and 6 parts of Adekaoptomer SP-172 (manufactured by Asahi Denka Kogyo Co., Ltd.) which is a photocationic polymerization initiator were prepared to obtain a photocurable resin composition. When an attempt was made to evaluate the continuous transferability by the same method as in Example 1, the transfer of the fine structure could not be confirmed on the transferred object at the 20th continuous transfer. At the same time, pattern buckling of the microstructure layer of the stamper was observed after 20 consecutive transfers.

DESCRIPTION OF SYMBOLS 1 Support base material 1a 1st hard layer 1b 1st soft layer 1c 2nd hard layer 1d 2nd soft layer 1e Soft layer 2 Fine structure layer 2a Resin composition 3 Fine pattern transfer stamper 4a Fine pattern 5 Transfer object 6 Curable resin material 7 Transfer substrate

Claims (8)

By pressing a stamper having a fine structure layer on which a concavo-convex pattern is formed against a photocurable resin material on a transfer substrate and curing the photocurable resin material, the concavo-convex shape of the stamper is applied to the photocurable resin material. In a pattern transfer method for transferring a pattern,
As the fine structure layer of the stamper, a polymer of a resin composition mainly composed of a silsesquioxane derivative having a curing mechanism different from the curing mechanism of the photocurable resin material is used, and the photocurable resin is used. A pattern transfer method, wherein the uneven pattern of the stamper is transferred to a material. The pattern transfer method according to claim 1,
The pattern transfer method, wherein the silsesquioxane derivative is photocationically polymerizable and the photocurable resin material is photoradical polymerizable. The pattern transfer method according to claim 2,
A pattern transfer method, wherein the photo-curable resin material is a photo-radical polymerizable resin composition containing an acrylate monomer as a main component. The pattern transfer method according to claim 1,
The pattern transfer method, wherein the silsesquioxane derivative is photoradical polymerizable and the photocurable resin material is photocationic polymerizable. The pattern transfer method according to claim 1,
A pattern transfer method, wherein the stamper is not subjected to a mold release process. The pattern transfer method according to claim 1,
The pattern transfer method, wherein the fine structure layer is a polymer of a resin composition containing a silsesquioxane derivative having a plurality of polymerizable functional groups as a main component. The pattern transfer method according to claim 1,
The pattern transfer method, wherein the resin composition containing the silsesquioxane derivative as a main component contains the silsesquioxane derivative in an amount of 80% by mass or more. The pattern transfer method according to claim 7,
The resin composition containing the silsesquioxane derivative as a main component includes a resin monomer that cures in the same mechanism as the polymerizable functional group of the silsesquioxane derivative in addition to the silsesquioxane derivative. Pattern transfer method.

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