JP5614935B2 - Vaporizer, vaporizer for MOCVD using this vaporizer, center rod used in these vaporizers or vaporizer for MOCVD, and carrier gas distribution - Google Patents

Description

  The present invention relates to a vaporizer for vaporizing a raw material solution composed of a plurality of thin film forming materials using a carrier gas, a vaporizer for MOCVD using this vaporizer, a center used for these vaporizers or a vaporizer for MOCVD. The present invention relates to a rod, a carrier gas dispersion method, and a carrier gas vaporization method.

  In recent years, in the field of electronic devices, there has been a demand for further miniaturization and higher performance of electronic devices along with higher circuit density. For example, an SRAM (Static Random Access read) that stores information by combining transistors. A circuit such as a write memory (EEPROM), an EEPROM (Electrically Erasable and Programmable Read Only Memory), or a DRAM (Dynamic Random Access Memory) that performs a storage operation of information with a combination of a transistor and a capacitor, and the like. In addition to achieving this, it is becoming more advantageous to realize device functions by utilizing the characteristics of materials such as functional thin films themselves. .

  In addition, such a semiconductor is mounted as an IC chip such as a credit card, for example, and the technology is diversifying into a personal information storage chip for a passport or the like.

  Therefore, it is desired to reduce the thickness of dielectric materials used for electronic parts. One method for thinning such a material is a CVD method.

  This CVD method has features such as a higher film formation speed and easier production of multilayer thin films than the PVD method, sol-gel method, and other film formation methods. The MOCVD method is a CVD method using a compound containing an organic substance as a raw material for forming a thin film, and has advantages such as high safety and no inclusion of halide in the film.

  The raw materials used in the MOCVD method are generally solid powders or liquids. These raw materials are put in a container, generally heated in a reduced pressure to vaporize the raw materials in a vaporizer, and then a thin film is formed with a carrier gas. It is fed into the membrane device.

  FIG. 7 is a system block diagram of such a MOCVD vaporization system (see Patent Document 1).

  In FIG. 7, reference numeral 10 denotes a supply unit that supplies a plurality of raw material solutions and the like to the vaporizer 1.

  The supply unit 10 includes a gas cylinder 11 filled with a carrier gas (for example, N2 or Ar), an oxygen cylinder 12 filled with oxygen, a water storage tank 13 in which cooling water is stored, and a raw material for a ferroelectric thin film. (For example, Sr (DPM) 2, Bi (C6H5) 3, Ta (OC2H5) 5 as three kinds of organometallic complexes) and a plurality of reserve tanks 14 to 17 storing THF (tetrahydrofuran) as a solvent; A gas supply pipe 18 connected to the vaporizer 1, an oxygen supply pipe 19 connected to the oxygen cylinder 12 and the vaporizer 1, a water supply pipe 20 and a water distribution pipe connected to the water storage tank 13 and the vaporizer 1. 21, liquid supply pipes 22 to 25 connected to the reserve tanks 14 to 17 and the vaporizer 1, and a manifold 26 connected to the reserve tanks 14 to 17 and the gas cylinder 11. To have.

  A valve 18 a and a mass flow controller 18 b are provided in the path of the gas supply pipe 18, and a valve 19 a, a mass flow controller 19 b and a valve 19 c are provided in the path of the oxygen supply pipe 19, and the path of the water supply pipe 20 is provided. Is provided with a valve 20a. Further, a valve 22a and a mass flow controller 22b are provided in the path of the liquid supply pipe 22 for the solvent, and valves 23a to 25a and mass flow controllers 23a to 25b are provided in the path of the liquid supply pipes 23 to 25 for the complex. In the path of the manifold 26, valves 26a to 26d, an air purge 26e, and a valve 26f are provided. The liquid supply pipes 23 to 25 are branched so as to be connected to the liquid supply pipe 22, and valves 23c to 25c are provided, respectively.

  The carrier gas filled in the gas cylinder 11 is supplied to the vaporizer 1 by controlling the flow rate by the mass flow controller 18 b by opening the valve 18 a of the gas supply pipe 18. The carrier gas filled in the gas cylinder 11 is sent to the reserve tanks 14 to 17 by opening the valve 26f and the valves 26a to 26d of the manifold 26 and closing the discharge state of the air purge valve 26e. It is. Thereby, the inside of the reserve tanks 14 to 17 is pressurized by the carrier gas, and the stored raw material solution is pushed up in the liquid supply pipes 22 to 25 facing the tip of the solution, and the mass flow controllers 22b to 25b After the flow rate is controlled by the above, it is transported to the vaporizer 1.

  At the same time, oxygen (oxidant) controlled to a constant flow rate is transported from the oxygen cylinder 12 to the vaporizer 1 by the mass flow controller 19b.

  Further, by opening the valve 20 a of the water supply pipe 20, the cooling water in the water storage tank 13 circulates inside the vaporizer 1 to cool the vaporizer 1.

  The thin film forming material supply units 27 to 30 are arranged in parallel along the axial direction of the vaporizer 1 in the illustrated example, but are actually connected to the water supply pipe 20 or the water distribution pipe 21 from the water storage tank 13. The connecting portions 31 and 32 are alternately provided radially.

  The raw material solution stored in the reserve tanks 15 to 17 dissolves liquid or solid organometallic complexes (Sr (DPM) 2, Bi (C6H5) 3, Ta (OC2H5) 5) at room temperature in the solvent THF. Therefore, if left as it is, the organometallic complex is precipitated by evaporation of the THF solvent, and finally becomes solid.

  Therefore, in order to prevent the inside of the liquid supply pipes 23 to 25 coming into contact with the undiluted solution from being blocked by this, the inside of the liquid supply pipes 23 to 25 and the vaporizer 1 after the film forming operation are stored in the reserve tank 14. What is necessary is just to wash | clean with THF. The cleaning at this time is a section from the outlet side of the mass flow controllers 13b to 25b to the vaporizer 1, and is washed away with THF stored in the reserve tank 14 after the operation is completed.

  FIG. 5 is a cross-sectional view showing a configuration of a main part of an example of the vaporizer 1 (see Patent Document 1).

  The vaporizer 1 shown in FIG. 5 includes a disperser (dispersing part body) 2 to which a gas supply pipe 18 is connected, and a reaction tube 3 continuously connected to the downstream side of the disperser 2. And a heater 4 covering the periphery of the reaction tube 3.

  The disperser 2 has a gas passage 5 located coaxially with the gas supply pipe 18. The leading ends of the respective thin film forming material supply units 27 to 30 face between the start upstream port 5a and the terminal injection port 5b of the gas passage 5 (in the drawing, the thin film forming material supply units 28 and 29 arranged to face each other). As a result, the raw material solution stored in the reserve tanks 15 to 17 can be supplied into the gas passage 5. In addition, a cooling path 6 is formed in the disperser 2 so as to circulate the cooling water in the water storage tank 13 in communication with the connection portions 31 and 32. Further, the disperser 2 includes a center rod 7 having one end positioned upstream from the start upstream port 5a of the gas supply pipe 18 and the other end positioned from the terminal injection port 5b, and a tip end side of the center rod 7 ( And a pin 8 that supports the downstream side of the gas passage 5. The base end side of the center rod 7 (upstream side of the gas passage 5) is held by a pin 9 provided near the end of the gas supply pipe 18.

  In such a configuration, the inner diameter (4.50 mm) of the carrier gas introduction hole is arranged so as to penetrate the carrier gas introduction hole inside the disperser 2 and to be coaxial with the axis of the carrier gas introduction hole. A center rod 7 having a small outer diameter (4.48 mm) is also arranged.

  The gas passage 5 is formed by the cooperation between the inner wall of the carrier gas introduction hole of the disperser 2 and the center rod 7.

  The cross-sectional width of the gas passage 5 is 0.02 mm. At this time, the cross-sectional width of the gas passage 5 is preferably 0.005 to 0.10 mm. This is because processing is difficult if it is less than 0.005 mm, and if it exceeds 0.10 mm, it is necessary to use a high-pressure carrier gas in order to increase the carrier gas speed.

  A carrier gas is introduced from the gas supply pipe 18 from the upstream side of the gas passage 5. Since the raw material solution is dropped into the carrier gas from the tips of the respective thin film forming material supply units 27 to 30 located in the middle of the gas passage 5, the raw material solution is dispersed in the carrier gas that passes through the gas passage 5. It becomes a mist shape.

  As a result, the carrier gas in which the raw material solution is dispersed is injected from the terminal injection port 5b downstream of the gas passage 5 into the reaction tube 3, and the carrier gas in which the raw material solution flowing in the reaction tube 3 is dispersed is heated by the heater 4 and vaporized. Then, it is sent to a thin film deposition apparatus (not shown).

  By the way, as a cooling part arrange | positioned at the vaporizer | carburetor 1, as above-mentioned, in addition to forming the cooling path 6 over the substantially full length of the gas passage 5, as shown in FIG. There is also known a system in which a cooling system 33 for cooling the inside of the gas passage 5 located on the tip side is disposed (see, for example, Patent Document 2).

  In FIG. 6, functions similar to those of the vaporizer 1 shown in FIG. 5 are given the same reference numerals, and descriptions thereof are omitted.

JP 2008-001994 A JP 2004-265938 A

  By the way, in the vaporizer 1 configured as described above, a phenomenon has occurred in which the thin film material adheres around the terminal injection port 5b of the vaporizer 1.

  That is, the carrier gas that passes through the gas passage 5 (particularly the carrier gas after the raw material solution is dispersed) is in a mist state before reaching the final injection port 5b because the inside of the gas passage 5 is in a high temperature environment. When the water in the raw material solution evaporates, the material powder component and the like adhere to the periphery of the terminal injection port 5b. In addition, such a material powder component or the like grows with time and may cause clogging of the terminal injection port 5b, and also may develop into a problem of contamination of impurities.

  Therefore, in order to cope with such a high temperature environment in the gas passage 5, the cooling passage 6 is formed on the outer periphery of the gas passage 5 and the cooling water is circulated through the cooling passage 6 to cool the gas passage 5. ing.

  However, since the cooling path 6 is formed in the disperser 2, the gas path 5 and the cooling path 6 are connected with each other in order to cool the gas path 5 indirectly from the outside of the gas path 5 using the heat transfer effect. There has been a problem that the cooling effect is low, such as heat loss corresponding to the wall thickness of the partitioning device 2 to be partitioned.

  In order to solve the above problems, the present invention can efficiently cool the carrier gas, can improve the material clogging prevention effect in the vicinity of the gas passage outlet, prolong the maintenance time, and improve the operation efficiency. Another object of the present invention is to provide a vaporizer capable of contributing to the above-mentioned and having a more uniform dispersion effect.

In order to achieve the object, the vaporizer of the reference invention includes a center rod that is inserted into a carrier gas introduction hole formed in the dispersion portion body and forms a gas passage through cooperation with the inner wall of the carrier gas introduction hole; A cooling part that is disposed on the outer peripheral side of the carrier gas introduction hole of the dispersion part main body and cools the inside of the gas passage, and cooling that is formed along the axial direction of the center rod and over substantially the entire length of the center rod A member insertion hole and a cooling member disposed in the cooling member insertion hole to cool the center rod are provided.

According to the vaporizer, she is possible to efficiently cool the carrier gas by the cooling unit and the cooling member.

The vaporizer according to claim 1, a center rod that is inserted over the entire length of the carrier gas introduction hole formed in the dispersion portion main body and forms a gas passage through cooperation with the inner wall of the carrier gas introduction hole, A thin film forming material supply part that is formed at a plurality of locations of the dispersion part main body and supplies a plurality of thin film forming materials to the middle part of the gas passage, and is disposed on the outer peripheral side of the carrier gas introduction hole of the dispersion part main body. A cooling portion for cooling the inside of the gas passage; a cooling member insertion hole formed along an axial direction of the center rod and extending over substantially the entire length of the center rod; and the center rod disposed in the cooling member insertion hole A cooling member for cooling,
The cooling unit and the cooling member are arranged to straddle at least the vicinity of the downstream end of the gas passage from the thin film forming material supply unit.

According to the vaporizer of the first aspect , the carrier gas can be efficiently cooled including the carrier gas in which the thin film forming material supplied from the thin film forming material supply unit is dispersed.

MOCVD vaporizer according to claim 3, characterized in that a vaporizing unit for vaporizing the carrier gas is dispersed a plurality of thin-film forming material by the dispersion main body adjacent the vaporizer .

According to the vaporizer for MOCVD according to claim 3 , it is possible to improve the effect of preventing the material clogging of the carrier gas efficiently cooled by the cooling part and the cooling member, and the maintenance time can be prolonged and the operation efficiency can be improved. It is possible to contribute to improvement, and to achieve a more uniform dispersion effect.

Center rod according to claim 4, the above vaporizer Wakashi Ku is a center rod used in the vaporizer for M MOCVD, the center thin-film forming material and a pair of outer circumference is formed and applied in the rod 1 It is characterized by having a plurality of guide grooves corresponding to.

The center rod according to claim 5 is characterized in that the cooling member is a substantially cylindrical Peltier element.

The center rod described in claim 6 is characterized in that the cooling member is a heat pipe in which a heat absorbing portion is disposed in the cooling member insertion hole.

The center rod described in claim 7 is characterized in that the cooling member is a spiral or substantially U-shaped cold water pipe through which cooling water is supplied and drained via a pump.

The center rod described in claim 8 is characterized in that the cooling member is detachably inserted into the center rod.

The method for cooling and dispersing the carrier gas according to claim 9 includes a plurality of gas passages formed between an inner wall of the carrier gas introduction hole formed in the dispersion portion main body and a center rod inserted into the carrier gas introduction hole. The carrier gas in which the thin film forming material is dispersed is introduced, and at least the thin film forming material is formed by the cooling part in which the carrier gas in which the thin film forming material is dispersed is arranged in the dispersion part main body and the cooling member arranged in the center rod. It is characterized in that the inside of the gas passage is conveyed while cooling from the supply section to the vicinity of the downstream end of the gas passage.

According to the carrier gas cooling and dispersing method of the ninth aspect , the carrier gas cooled efficiently by the cooling unit and the cooling member can be introduced.

Furthermore, the carrier gas vaporization method according to claim 10 is provided in a gas passage formed between an inner wall of a carrier gas introduction hole formed in the dispersion portion main body and a center rod inserted into the carrier gas introduction hole. A center rod tip disposed at the downstream end of the gas passage after introducing the carrier gas and introducing the thin film forming material from a plurality of locations in the middle of the gas passage to disperse the thin film forming material in the carrier gas. The vaporization method of the carrier gas, which is vaporized after merging the carrier gas in which the thin film forming material is dispersed at the merging portion guided in a direction approaching each other, introduced from at least a plurality of locations in the middle of the gas passage The carrier gas in which the thin film forming material is dispersed is divided into a cooling part arranged in the dispersion part main body and a cooling member arranged in the center rod. Characterized by guiding the carrier gas said thin film forming material is dispersed in the merging section while cooling over near the downstream end of the gas passage from the thin film forming material supply portion even without.

According to the carrier gas vaporization method of the tenth aspect , it is possible to contribute to the vaporization of the carrier gas with less impurities.
According to a second, ninth, or tenth aspect of the present invention, a radiation preventing portion having a hole having a cross-sectional area smaller than the cross-sectional area of the gas outlet is provided outside the gas outlet between the gas passage and the vaporizing pipe. It is characterized by being.

  The vaporizer of the present invention can efficiently cool the carrier gas, can improve the material clogging prevention effect near the gas passage outlet, and contribute to longer maintenance time and improved operating efficiency. In addition, a more uniform dispersion effect can be achieved.

It is sectional drawing of the principal part which shows one Embodiment of the vaporizer for MOCVD of this invention. (A) is a longitudinal sectional view of the center rod 35 applied to the vaporizer for MOCVD of the present invention, and (B) is a transverse sectional view of the center rod 35 applied to the vaporizer for MOCVD of the present invention. It is a longitudinal cross-sectional view of the center rod 35 of the modification 1 applied to the vaporizer for MOCVD of this invention. It is a longitudinal cross-sectional view of the center rod 35 of the modification 2 applied to the vaporizer for MOCVD of this invention. It is sectional drawing of the principal part which shows the conventional vaporizer | carburetor. It is sectional drawing of the principal part which shows the other conventional vaporizer | carburetor. It is a system block diagram of the vaporization system of MOCVD method.

  Next, the vaporizer for MOCVD of this invention is demonstrated based on drawing. In each of the following embodiments, the apparent system configuration of the raw material supply system and the like is the same as that shown in FIG. 7, and therefore detailed description of the entire system is omitted here.

  FIG. 1 is a cross-sectional view of an essential part showing an embodiment of a vaporizer for MOCVD according to the present invention, FIG. 2 (A) is an enlarged vertical cross-sectional view of a center rod, and FIG. 2 (B) is an enlarged cross-sectional view of the center rod. FIG.

  In FIG. 1, a vaporizer 1 is inserted into a carrier gas introduction hole formed in a disperser (dispersing part main body) 2 and a center rod 35 that forms a gas passage 5 in cooperation with the inner wall of the carrier gas introduction hole; The cooling path 6 arranged on the outer peripheral side of the carrier gas introduction hole of the disperser 2 to cool the inside of the gas passage 5 and the cooling formed along the axial direction of the center rod 35 and over substantially the entire length of the center rod 35 A member insertion hole 35a and a cooling member 36 disposed in the cooling member insertion hole 35a for cooling the center rod 35 are provided.

  Further, the disperser 2 is provided with thin film forming material supply portions 27 to 30 (in FIG. 1, the thin film forming materials arranged opposite to each other) that supply a plurality of thin film forming materials to the middle portion of the gas passage 5. Only the supply units 28 and 29 are shown).

  Under the present circumstances, the cooling path 6 and the cooling member 36 are arrange | positioned ranging over the downstream end vicinity of the gas channel 5 at least from the vicinity of the thin film formation material supply parts 27-30.

  In addition, a vaporizing section that vaporizes a carrier gas in which a plurality of thin film forming materials are dispersed by the disperser 2 is constituted by the reaction tube 3 and the heater 4.

  The specific configuration of the present invention will be described below.

  In the vaporizer 1 of the present invention, the gas passage 5 formed inside the disperser 2 constituting the dispersion portion and the carrier gas introduction formed in the gas supply pipe 18 so as to communicate with the gas passage 5 are provided. Gas introduction port 18a, a thin film forming material supply unit 27 to 30 for supplying a raw material solution to the carrier gas passing through the gas passage 5 to mist the raw material solution, and a carrier containing the misted raw material solution Terminal injection port 5b for sending gas to the vaporizing section, cooling path 6 as a cooling section through which cooling water for cooling the carrier gas flowing in the gas passage 5 circulates, and one end connected to the reaction tube of the MOCVD apparatus And a reaction tube 3 having the other end connected to the terminal injection port 5 b of the disperser 2 and a heater 4 for heating the reaction tube 3.

  The inside of the disperser 2 has a hollow cylindrical shape, and a center rod 35 is inserted into the hollow carrier gas introduction hole, and a gas passage 5 is formed by the inner wall of the disperser 2 and the center rod 35. The carrier gas introduction hole is not limited to a cylindrical shape, but may have another shape, for example, a conical shape. The angle of the cone of the conical carrier gas introduction hole is preferably 0 to 45 °, more preferably 8 to 20 °. The same applies to other embodiments.

  The cross-sectional area of the gas passage is preferably 0.10 to 0.5 mm2. If it is less than 0.10 mm2, processing is difficult. If it exceeds 0.5 mm 2, it is necessary to use a high-pressure and large-flow carrier gas in order to increase the carrier gas speed.

  When a large flow rate of carrier gas is used, a large-capacity large vacuum pump is required to maintain the reaction chamber at a reduced pressure (eg, 1.0 Torr). The exhaust capacity is 10,000 liters / min. Since it is difficult to employ a vacuum pump exceeding (at, 1.0 Torr), an appropriate flow rate, that is, a gas passage area of 0.10 to 0.5 mm 2 is preferable in order to achieve industrial practical use.

  A gas inlet 18 a is provided at one end of the gas passage 5. A gas cylinder 11 of a carrier gas (for example, at least one of N2, Ar, and He) is connected to the gas introduction port 18a.

  In the substantially central portion of the disperser 2, thin film forming material supply units 27 to 30 are provided so as to communicate with the gas passage 5, the raw material solution is dropped into the gas passage 5, and the raw material solution passes through the gas passage 5. A raw material gas can be obtained by dispersing in a gas.

  At one end of the gas passage 5, there is provided a radiation preventing part 37 having a terminal injection port 5 b communicating with the reaction tube 3.

  A cooling path 6 for circulating cooling water is formed in the disperser 2, and the carrier gas flowing in the gas passage 5 is cooled by flowing cooling water through the cooling path 6. In place of this cooling path 6, a Peltier element or the like may be installed for cooling. Further, since the gas passage 5 is affected by the heat of the heater 4, the solvent of the raw material solution and the organometallic complex are not simultaneously vaporized in the gas passage 5, and only the solvent is vaporized. Therefore, it is preferable to prevent vaporization of only the solvent by cooling the carrier gas in which the raw material solution flowing in the gas passage 5 is dispersed. At this time, since cooling to the downstream side of the gas passage 5 with respect to the thin film forming material supply units 27 to 30 is particularly important, at least cooling of the gas passage 5 downstream of the thin film forming material supply units 27 to 30 is performed. Preferably it is done. The cooling temperature is a temperature not higher than the boiling point of the solvent (for example, 67 ° C. or lower for THF). In particular, the temperature at the terminal injection port 5b is important.

  Therefore, as shown in FIG. 2, the center rod 35 of the present invention has a cooling member insertion hole 35a formed on the axis thereof, and a cooling member 36 for directly cooling the center rod 35 directly into the cooling member insertion hole 35a. Is arranged. A plurality of guide grooves 35b corresponding to the thin film forming material supply sections 27 to 30 are formed on the outer periphery of the center rod 35 in order to efficiently supply the applied thin film forming material to the downstream side. Yes.

  As shown in FIG. 2 (A), the center rod 35 is tapered so as to approach each other in the axial direction from the midway portion toward the start end upstream port 5a side.

  At this time, it is preferable that the tip portion has a conical (or frustoconical) shape, and the carrier gas introduction hole of the disperser 2 is formed along the tip shape so that the gas passage 5 is formed at the terminal injection port 5b. It will merge (merging part). The tip portion 37a may have a pyramid (or truncated pyramid) shape. At this time, the number of corners (number of surfaces) is a quadrangular pyramid corresponding to the four thin film forming material supply units 27 to 30, and corresponds to the number of gas passages 5, that is, the number of reserve tanks 14 to 17. It can be set as the polygonal cone of the number of surfaces corresponding to the number of raw material solutions (thin film formation raw material). In this case, of course, guide grooves 35b are formed on the respective surfaces. Moreover, although the terminal injection port 5b is used as a merging portion, this merging portion may be provided upstream of the terminal injection port 5b in the carrier gas transport direction.

  As the cooling member 36, for example, a cylindrical member having an outer side as a heat absorption side and an inner side as a heat dissipation side is used. In FIG. 2B, reference numerals 36a and 36b denote wiring codes.

  As shown in FIG. 3, for example, the cooling member 36 includes a heat pipe in which the heat absorption side is located inside the cooling member insertion hole 35a and the heat radiation side is located outside the cooling member insertion hole 35a, as shown in FIG. As shown in Fig. 2, a helical (or substantially U-shaped) cold water pipe for circulating cooling water is not particularly limited, but it is preferable to have a shape (thickness etc.) according to the cooling temperature. . Further, by not using the cooling member 36 as a cooling passage or the like directly formed in the center rod 35, it is possible to contribute to facilitating the formation of the center rod 35 and facilitating maintenance such as disassembly. Furthermore, the cooling member 36 can cool the carrier gas in advance by being disposed over substantially the entire length of the center rod 35. However, if the cooling temperature can be secured high, at least the thin film forming material supply unit The structure which cools the inside of the gas passage 5 downstream from 27-30 may be sufficient.

  The radiation preventing part 37 in which the terminal injection port 5b is formed is sealed by sealing members 38 and 39 such as O-rings. In addition, it is preferable that this radiation prevention part 37 is comprised with the material excellent in thermal conductivity, such as Teflon (trademark), stainless steel, and ceramics, for example.

  According to the knowledge of the present inventor, as shown in the prior art, in the configuration in which only the outside of the gas passage 5 is cooled, the heat in the vaporization section is radiated heat as the gas in the gas passage 5 via the terminal injection port 5b. Will overheat. Therefore, even if it is cooled by cooling water, the low melting point component in the carrier gas is deposited in the vicinity of the terminal injection port 5b.

  Therefore, it is possible to further suppress the propagation of such radiant heat to the carrier gas by disposing the above-described cooling member 36 and further disposing the radiation preventing portion 37. Therefore, the cross-sectional area of the terminal injection port 5b is preferably smaller than the cross-sectional area of the gas passage 5 (for example, 1/2 or less, more preferably 1/3 or less). Moreover, it is preferable to make the terminal injection port 5b minute. In particular, it is preferable that the jetting gas flow velocity is reduced to a dimension that makes subsonic velocity.

  Further, the length of the terminal injection port 5b is preferably at least 5 times the cross-sectional dimension of the terminal injection port 5b, more preferably at least 10 times.

  Further, by cooling the disperser 2, it is possible to prevent clogging due to carbides in the gas passage 5 (particularly, the terminal injection port 5b) even when used for a long period of time.

  A reaction tube 3 is connected to the downstream side of the disperser 2. The disperser 2 and the reaction tube 3 can be connected by a joint or the like.

In the above configuration, the carrier gas is introduced into the gas passage 5 formed between the inner wall of the carrier gas introduction hole formed in the disperser 2 and the center rod 35 inserted in the carrier gas introduction hole, and the gas A thin film forming material is introduced from a plurality of locations in the middle of the passage 5 to disperse the thin film forming material in the carrier gas, and at least a carrier gas in which the thin film forming material introduced from a plurality of locations in the middle of the gas passage 5 is dispersed, After guiding the carrier gas in which the thin film forming material is dispersed in the merging portion while being cooled by the cooling path 6 disposed in the disperser 2 and the cooling member 36 disposed in the center rod 35, the carrier gas is disposed at the downstream end of the gas passage 5. After the carrier gas in which the thin film forming material is dispersed is joined at the joining portion guided in the direction approaching each other by the tip of the center rod 35 that has been made, After vaporized by heating at over motor 4, is fed into the thin film deposition apparatus abbreviated shown.

1 ... Vaporizer 2 ... Disperser (dispersion body)
DESCRIPTION OF SYMBOLS 3 ... Reaction tube 4 ... Heater 5 ... Gas passage 5a ... Start end upstream port 5b ... End injection port (merging part)
6 ... Cooling passage 7 ... Center rod 8 ... Pin 9 ... Pin 10 ... Supply section 11 ... Gas cylinder 12 ... Oxygen cylinder 13 ... Water storage tank 14 ... Reserve tank 15 ... Reserve tank 16 ... Reserve tank 17 ... Reserve tank 18 ... Gas supply pipe 18b ... Mass flow controller 18b ... Mass flow controller 19 ... Oxygen supply pipe 19a ... Valve 19b ... Mass flow controller 19c ... Valve 20 ... Water supply pipe 20a ... Valve 21 ... Water distribution pipe 22 ... Liquid supply pipe 22a ... Valve 22b ... Mass flow controller 22c ... Valve 23 ... Liquid supply pipe 23a ... Valve 23b ... Mass flow controller 23c ... Valve 24 ... Liquid supply pipe 24a ... Valve 24b ... Mass flow controller 24c ... Valve 25 ... Liquid supply pipe 25a ... Valve 25b ... Mass flow Controller 25c ... Valve 26 ... Manifold 26a ... Valve 26b ... Valve 26c ... Valve 26d ... Valve 26e ... Air purge 26f ... Valve 27 ... Thin film forming material supply unit 28 ... Thin film forming material supply unit 29 ... Thin film forming material supply unit 30 ... Thin film Forming material supply unit 31 ... Connection unit 32 ... Connection unit 33 ... Cooling system 35 ... Center rod 35a ... Cooling member insertion hole 35b ... Guide groove 36 ... Cooling member 37 ... Radiation prevention unit 38 ... Sealing member 39 ... Sealing member

Claims (11)

A center rod that is inserted over the entire length of the carrier gas introduction hole formed in the dispersion part body and forms a gas passage in cooperation with the inner wall of the carrier gas introduction hole, and is formed at a plurality of locations of the dispersion part body. A thin film forming material supply unit that supplies a plurality of thin film forming materials to a middle part of the gas passage, and a cooling unit that is disposed on the outer peripheral side of the carrier gas introduction hole of the dispersion unit main body and cools the gas passage. A cooling member insertion hole formed along the axial direction of the center rod and over substantially the entire length of the center rod, and a cooling member disposed in the cooling member insertion hole to cool the center rod,
The vaporizer, wherein the cooling unit and the cooling member are disposed across at least the vicinity of the downstream end of the gas passage from the thin film forming material supply unit. The radiation prevention part which has the hole which has a cross-sectional area smaller than the cross-sectional area of this gas outlet in the outer side of this gas outlet between the said gas channel | path and a vaporization pipe | tube is provided. Vaporizer. A vaporizer for MOCVD, comprising a vaporizer for vaporizing a carrier gas in which a plurality of thin film forming materials are dispersed in the main body of the dispersion unit adjacent to the vaporizer according to claim 1 or 2. A center rod used in the vaporizer according to claim 1 or 2, or the vaporizer for MOCVD according to claim 3,
A center rod comprising a plurality of guide grooves formed on an outer periphery of the center rod and corresponding one-to-one with a thin film forming material to be applied. The center rod according to claim 4, wherein the cooling member is a substantially cylindrical Peltier element. The center rod according to claim 4, wherein the cooling member is a heat pipe in which a heat absorbing portion is disposed in the cooling member insertion hole. The center rod according to claim 4, wherein the cooling member is a spiral or substantially U-shaped cold water pipe through which cooling water is supplied and drained via a pump. The center rod according to any one of claims 4 to 7, wherein the cooling member is detachably inserted into the center rod. While introducing a carrier gas in which a plurality of thin film forming materials are dispersed into a gas passage formed between an inner wall of a carrier gas introduction hole formed in the dispersion body and a center rod inserted into the carrier gas introduction hole The carrier gas in which the thin film forming material is dispersed is cooled across the vicinity of the downstream end of the gas passage from at least the thin film forming material supply unit by the cooling unit arranged in the dispersion unit main body and the cooling member arranged in the center rod. A carrier gas cooling and dispersing method, wherein the carrier gas is conveyed in the gas passage. The carrier gas is introduced into the gas passage formed between the inner wall of the carrier gas introduction hole formed in the dispersion body and the center rod inserted into the carrier gas introduction hole, and a plurality of locations in the middle of the gas passage After the thin film forming material is introduced from the carrier gas, the thin film forming material is dispersed in a carrier gas, and then the thin film is formed at a junction portion guided in a direction approaching each other by a center rod tip disposed at a downstream end portion of the gas passage. A method of vaporizing a carrier gas that is vaporized after the carrier gas in which the forming material is dispersed is merged,
At least a thin film forming material supply unit including a cooling unit disposed in the dispersion unit main body and a cooling member disposed in the center rod with a carrier gas in which a thin film forming material introduced from a plurality of locations in the middle of the gas passage is dispersed. The carrier gas vaporizing method is characterized in that the carrier gas in which the thin film forming material is dispersed is guided to the joining portion while cooling over the vicinity of the downstream end of the gas passage. The radiation prevention part which has the hole which has a cross-sectional area smaller than the cross-sectional area of this gas outlet in the outer side of this gas outlet between the said gas channel and a vaporization pipe | tube is provided. The carrier gas cooling / dispersing method of claim 10 or the carrier gas vaporizing method according to claim 10.

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