JP5586297B2 - Temperature abnormality detection device and millimeter wave radar module - Google Patents

Description

  The present invention relates to a temperature abnormality detection device and a millimeter wave radar module.

  In the millimeter wave radar module, ambient temperature is detected in order to determine an abnormality of a high-frequency circuit (Patent Document 1). In the detection of the ambient temperature, an output voltage of a circuit composed of a thermistor and a resistor is monitored by a microcomputer.

JP 2006-275776 A

  However, according to the above-described conventional technique, an error occurs in the detected value of the ambient temperature due to variations in the characteristics of components such as the thermistor and resistance, and errors due to A / D conversion. To reduce this error, the change in the output voltage with respect to temperature can be increased. However, the slope of the output voltage of the circuit composed of the thermistor and resistor decreases at high and low temperatures. There was a problem that it interfered with detection.

  The present invention has been made in view of the above, and an object of the present invention is to obtain a temperature abnormality detection device and a millimeter wave radar module that can improve temperature detection accuracy at high and low temperatures.

  In order to solve the above-described problems and achieve the object, a temperature abnormality detection device according to the present invention includes a temperature monitor unit that monitors a temperature based on an output voltage that changes according to temperature, and the temperature monitor unit that monitors the temperature. A threshold value determination unit that determines the magnitude relationship between the generated temperature and the threshold value, a first amplification unit that increases the gradient of the low-temperature side output voltage with respect to the temperature, and a second value that increases the gradient of the high-temperature side output voltage with respect to the temperature. Based on the determination result by the amplifying unit, the low-temperature abnormality detection unit that detects a low-temperature abnormality from the output voltage amplified by the first amplification unit, and the determination result by the threshold determination unit And a high temperature abnormality detection unit for detecting a high temperature abnormality from the output voltage amplified by the second amplification unit.

  According to the present invention, there is an effect that it is possible to improve temperature detection accuracy at high and low temperatures.

FIG. 1 is a block diagram showing a schematic configuration of Embodiment 1 of the temperature abnormality detection device according to the present invention. FIG. 2 is a diagram showing the relationship between the input value of the microcomputer of FIG. 1 and the temperature. FIG. 3 is a diagram illustrating an abnormality determination method of the temperature abnormality detection device in FIG. 1. FIG. 4 is a flowchart showing the operation of the temperature abnormality detection device of FIG. FIG. 5 is a block diagram showing a schematic configuration of Embodiment 2 of the temperature abnormality detection device according to the present invention. FIG. 6 is a flowchart showing the operation of the temperature abnormality detection device of FIG. FIG. 7 is a block diagram showing a schematic configuration of Embodiment 3 of the temperature abnormality detection device according to the present invention. FIG. 8 is a flowchart showing the operation of the temperature abnormality detection device of FIG. FIG. 9 is a block diagram showing a schematic configuration of the millimeter wave radar module according to the fourth embodiment of the present invention.

  Embodiments of a temperature abnormality detection device according to the present invention will be described below in detail with reference to the drawings. Note that the present invention is not limited to the embodiments.

Embodiment 1 FIG.
FIG. 1 is a block diagram showing a schematic configuration of Embodiment 1 of the temperature abnormality detection device according to the present invention. In FIG. 1, resistors R1 and R2 are connected in series to each other, a resistor R2 and a thermistor Rt1 are connected in parallel to each other, and one end of the resistor R1 is connected to a reference potential Va. The resistors R1 and R2 and the thermistor Rt1 constitute a temperature detection circuit that generates an output voltage Vout that changes according to the temperature.

  The temperature abnormality detection device is provided with a microcomputer 11 and amplifiers 12 and 13. The microcomputer 11 includes an A / D converter and is provided with analog input terminals A / D1 to A / D3.

  Here, the amplifier 12 can increase the gradient with respect to the temperature of the output voltage Vout on the low temperature side. For example, the output value VL of the amplifier 12 can be given by (Vout−3 / 4 * Va). The amplifier 13 can increase the gradient with respect to the temperature of the output voltage Vout on the high temperature side. For example, the output value VH of the amplifier 13 can be given by Vout * 4.

  The output voltage Vout is input to the analog input terminal A / D1, the output value VL of the amplifier 12 is input to the analog input terminal A / D2, and the output value VH of the amplifier 13 is input to the analog input terminal A / D3. Has been.

  The microcomputer 11 includes a normal temperature monitor unit 11a, a threshold value determination unit 11b, a low temperature abnormality detection unit 11c, and a high temperature abnormality detection unit 11d. The normal temperature monitoring unit 11a can monitor the temperature based on the output voltage Vout input to the analog input terminal A / D1. The threshold determination unit 11b can determine the magnitude relationship between the temperature monitored by the normal temperature monitoring unit 11a and the threshold. The low temperature abnormality detection unit 11c can detect a low temperature abnormality from the output value VL of the amplifier 12 based on the determination result by the threshold determination unit 11b. The high temperature abnormality detection unit 11d can detect a low temperature abnormality from the output value VH of the amplifier 13 based on the determination result by the threshold determination unit 11b.

  FIG. 2 is a diagram showing the relationship between the input value of the microcomputer of FIG. 1 and the temperature. In FIG. 2, when the temperature monitored by the normal temperature monitor unit 11a is the normal temperature, the temperature is monitored based on the output voltage Vout input to the analog input terminal A / D1 by operating in the normal temperature monitor mode M2. The

  When the temperature monitored by the normal temperature monitor unit 11a is low, the operation is performed in the low temperature abnormality detection mode M1, and the low temperature abnormality is detected based on the output value VL input to the analog input terminal A / D2. The threshold determination unit 11b compares the temperature monitored by the normal temperature monitoring unit 11a with the lower limit of the mode transition threshold, and when the temperature monitored by the normal temperature monitoring unit 11a is lower than the lower limit of the mode transition threshold, It is possible to shift to the low temperature abnormality detection mode M1.

  When the temperature monitored by the normal temperature monitor unit 11a is high, it operates in the high temperature abnormality detection mode M3, and a high temperature abnormality is detected based on the output value VH input to the analog input terminal A / D3. The threshold determination unit 11b compares the temperature monitored by the normal temperature monitoring unit 11a with the upper limit of the mode transition threshold, and when the temperature monitored by the normal temperature monitoring unit 11a exceeds the upper limit of the mode transition threshold, It is possible to shift to the high temperature abnormality detection mode M3. The lower and upper limits of the mode transition threshold can be stored in the nonvolatile memory of the microcomputer 11.

  The range of the low temperature and the high temperature mentioned here can be set based on a region where the gradient of the output voltage Vout with respect to the temperature is gentle. For example, the low temperature range can correspond to a region where the gradient of the output voltage Vout with respect to the temperature on the low temperature side is a predetermined value or less. The high temperature range can correspond to a region where the gradient of the output voltage Vout with respect to the temperature on the high temperature side is not more than a predetermined value.

  FIG. 3 is a diagram showing an abnormality determination method by the temperature abnormality detection device of FIG. In FIG. 3, the upper limit of the abnormality determination threshold STH1 and the upper limit of the normal return determination threshold STH2 are registered in the low temperature abnormality detection unit 11c, and the lower limit of the abnormality determination threshold STH1 and the normal return determination threshold STH2 are registered in the high temperature abnormality detection unit 11d. The lower limit of is registered. It is possible to satisfy the relationship of the upper limit of the abnormality determination threshold value STH1> the upper limit of the normal recovery determination threshold value STH2, the lower limit of the normal recovery determination threshold value STH2> the lower limit of the abnormality determination threshold value STH1.

  Then, the low temperature abnormality detection unit 11c monitors the temperature on the low temperature side from the output value VL of the amplifier 12, and compares it with the upper limit of the abnormality determination threshold value STH1 and the upper limit of the normal return determination threshold value STH2. When the temperature monitor value on the low temperature side exceeds the upper limit of the abnormality determination threshold value STH1, it is determined that the temperature is abnormal. When the temperature monitor value on the low temperature side falls below the upper limit of the normal return determination threshold value STH2, normal return is performed.

  In the high temperature abnormality detection unit 11d, the temperature on the high temperature side is monitored from the output value VH of the amplifier 13, and is compared with the lower limit of the abnormality determination threshold value STH1 and the lower limit of the normal return determination threshold value STH2. When the temperature monitor value on the high temperature side falls below the lower limit of the abnormality determination threshold value STH1, it is determined that the temperature is abnormal. When the temperature monitor value on the high temperature side exceeds the lower limit of the normal return determination threshold value STH2, normal return is performed.

  The temperature monitoring by the low temperature abnormality detection unit 11c and the high temperature abnormality detection unit 11d is performed, for example, every modulation period (for example, 50 ms), and abnormality determination can be performed every period.

  FIG. 4 is a flowchart showing the operation of the temperature abnormality detection device of FIG. In FIG. 4, at the time of inspection adjustment before shipment, a threshold table related to the temperature monitor is created (step S1) and stored in the nonvolatile memory in the microcomputer 11 (step S2).

  Next, at the time of product operation after shipment, the temperature monitor values V1, V2, and V3 are acquired from the temperature monitor start signal input waiting state (step S3) (step S4). The temperature monitor value V1 can be calculated from the output voltage Vout, the temperature monitor value V2 can be calculated from the output value VL of the amplifier 12, and the temperature monitor value V3 can be calculated from the output value VH of the amplifier 13.

  Next, the temperature monitor value V1 is compared with the lower limit V31 and the upper limit V32 of the mode transition threshold (step S5). If the temperature monitor value V1 is within the range between the lower limit V31 and the upper limit V32 of the mode transition threshold, it is determined that the temperature is normal. Then, a series of temperature complement calculation processing is performed (step S6).

  On the other hand, if the temperature monitor value V1 is outside the range between the lower limit V31 and the upper limit V32 of the mode transition threshold and is smaller than the lower limit V31 of the mode transition threshold (step S7), the process proceeds to the high temperature abnormality detection mode M3 (step S8).

  Then, in the high temperature abnormality detection mode M3, the temperature monitor value V3 is compared with the lower limit V11 of the abnormality determination threshold (step S10), and if the temperature monitor value V3 falls below the lower limit V11 of the abnormality determination threshold, the upper system is notified of the abnormality. (Step S12). Then, the process shifts to a temperature monitor start signal input waiting state when the temperature is abnormal (step S13).

  On the other hand, if the temperature monitor value V1 is outside the range between the lower limit V31 and the upper limit V32 of the mode transition threshold and is not smaller than the lower limit V31 of the mode transition threshold (step S7), the process proceeds to the low temperature abnormality detection mode M1 (step S9). .

  Then, in the low temperature abnormality detection mode M1, the temperature monitor value V2 is compared with the upper limit V12 of the abnormality determination threshold (step S11), and if the temperature monitor value V3 exceeds the upper limit V12 of the abnormality determination threshold, the upper system is notified of the abnormality. (Step S12). Then, the process shifts to a temperature monitor start signal input waiting state when the temperature is abnormal (step S13).

  Here, in order to detect the temperature abnormality, the gradient with respect to the temperature can be increased by using the output value VL of the amplifier 12 or the output value VH of the amplifier 13. For this reason, even when an error occurs in the temperature detection value due to variations in the characteristics of components such as the thermistor Rt and resistors R1 and R2, or errors due to A / D conversion, the influence of such errors is reduced, Detection accuracy can be improved.

Embodiment 2. FIG.
FIG. 5 is a block diagram showing a schematic configuration of Embodiment 2 of the temperature abnormality detection device according to the present invention. 5, in this temperature abnormality detection device, a microcomputer 21 is provided in place of the microcomputer 11 and the amplifiers 12 and 13 of FIG. 1. Here, the microcomputer 21 includes the microcomputer 11 of FIG. In addition to the configuration, a low-temperature side converted value calculator 21a and a high-temperature side converted value calculator 21b are provided, and an analog input terminal A / D is provided instead of the analog input terminals A / D1 to A / D3.

  Here, the low temperature side converted value calculation unit 21a can calculate the low temperature side converted value VL so that the change of the low temperature side output voltage Vout with respect to the temperature becomes large. The high temperature side converted value calculation part 21b can calculate the high temperature side converted value VH so that the change of the high temperature side output voltage Vout with respect to temperature becomes large.

  That is, the low temperature side converted value calculation unit 21a can realize the function of the amplifier 12 in FIG. 1 on the microcomputer 21, and the low temperature side converted value VL is given by (Vout−3 / 4 * Va), for example. be able to. The high temperature side converted value calculation unit 21b can realize the function of the amplifier 13 of FIG. 1 on the microcomputer 21. For example, the high temperature side converted value VH can be given by Vout * 4.

  FIG. 6 is a flowchart showing the operation of the temperature abnormality detection device of FIG. In FIG. 6, at the time of inspection adjustment before shipment, a threshold table related to the temperature monitor is created (step S21) and stored in the nonvolatile memory in the microcomputer 21 (step S22).

  Next, at the time of product operation after shipment, the temperature monitor values V1, V2, and V3 are acquired from the temperature monitor start signal waiting state (step S23) (step S24). The temperature monitor value V1 is calculated from the output voltage Vout, the temperature monitor value V2 is calculated from the low temperature side converted value VL of the low temperature side converted value calculator 21a, and the temperature monitor value V3 is the high temperature of the high temperature side converted value calculator 21b. It can be calculated from the side conversion value VH.

  Next, the temperature monitor value V1 is compared with the lower limit V31 and the upper limit V32 of the mode transition threshold (step S25). If the temperature monitor value V1 is within the range between the lower limit V31 and the upper limit V32 of the mode transition threshold, it is determined that the temperature is normal. Then, a series of temperature complement calculation processing is performed (step S26).

  On the other hand, if the temperature monitor value V1 is outside the range between the lower limit V31 and the upper limit V32 of the mode transition threshold and is smaller than the lower limit V31 of the mode transition threshold (step S27), the process proceeds to the high temperature abnormality detection mode M3 (step S28).

  Then, in the high temperature abnormality detection mode M3, the temperature monitor value V3 is compared with the lower limit V11 of the abnormality determination threshold (step S30), and if the temperature monitor value V3 falls below the lower limit V11 of the abnormality determination threshold, the upper system is notified of the abnormality. (Step S32). And it shifts to the input waiting state of the temperature monitor start signal at the time of temperature abnormality (step S33).

  On the other hand, if the temperature monitor value V1 is outside the range between the lower limit V31 and the upper limit V32 of the mode transition threshold and is not smaller than the lower limit V31 of the mode transition threshold (step S27), the process proceeds to the low temperature abnormality detection mode M1 (step S29). .

  Then, in the low temperature abnormality detection mode M1, the temperature monitor value V2 is compared with the upper limit V12 of the abnormality determination threshold (step S31), and if the temperature monitor value V2 exceeds the upper limit V12 of the abnormality determination threshold, an abnormality is notified to the host system. (Step S32). And it shifts to the input waiting state of the temperature monitor start signal at the time of temperature abnormality (step S33).

  Here, by realizing the functions of the amplifiers 12 and 13 in FIG. 1 on the microcomputer 21, it is possible to reduce the number of analog input terminals of the microcomputer 21 and add components such as the amplifiers 12 and 13. There is no need to do so, and the cost can be reduced.

Embodiment 3 FIG.
FIG. 7 is a block diagram showing a schematic configuration of Embodiment 3 of the temperature abnormality detection device according to the present invention. 7, in this temperature abnormality detection device, a microcomputer 31 and switches SW1 and SW2 are provided instead of the microcomputer 11 of FIG.

  The microcomputer 31 is provided with a normal temperature monitor unit 31a, a threshold value determination unit 31b, and an abnormality detection unit 31c, and an analog input terminal A instead of the analog input terminals A / D1 to A / D3 of the microcomputer 11 in FIG. / D1 and A / D2 are provided.

  Here, the normal temperature monitoring unit 31a can monitor the temperature based on the output voltage Vout input to the analog input terminal A / D1. The threshold determination unit 31b can determine the magnitude relationship between the temperature monitored by the normal temperature monitoring unit 31a and the threshold. The abnormality detection unit 31c detects a low temperature abnormality or a high temperature abnormality from the output value VL of the amplifier 12 or the output value VH of the amplifier 13 input to the analog input terminal A / D2 based on the determination result by the threshold determination unit 31b. Can do. The switch SW1 can switch the output to the analog input terminal A / D2 between the amplification units 12 and 13 based on the determination result by the threshold determination unit 31b.

  That is, when the temperature monitored by the normal temperature monitoring unit 31a exceeds the upper limit of the mode transition threshold, the threshold determination unit 31b outputs the control signal CS to switch the switch SW1 to the amplification unit 12 side, and also detects the abnormality detection unit. The low temperature abnormality can be detected by 31c. When the temperature monitored by the normal temperature monitoring unit 31a is below the lower limit of the mode transition threshold, the threshold determination unit 31b outputs a control signal CS to switch the switch SW1 to the amplification unit 13 side, and an abnormality detection unit. The high temperature abnormality can be detected by 31c.

  FIG. 8 is a flowchart showing the operation of the temperature abnormality detection device of FIG. In FIG. 8, at the time of inspection adjustment before shipment, a threshold table related to the temperature monitor is created (step S41) and stored in the nonvolatile memory in the microcomputer 31 (step S42).

  Next, at the time of product operation after shipment, the temperature monitor values V1 and V2 are obtained from the state waiting for the input of the temperature monitor start signal (step S43) (step S44). The temperature monitor value V1 can be calculated from the output voltage Vout, and the temperature monitor value V2 can be calculated from the output value VL of the amplifier 12 or the output value VH of the amplifier 13.

  Next, the temperature monitor value V1 is compared with the lower limit V31 and the upper limit V32 of the mode transition threshold (step S45). If the temperature monitor value V1 is within the range between the lower limit V31 and the upper limit V32 of the mode transition threshold, it is determined that the temperature is normal. Then, a series of temperature complement calculation processing is performed (step S46).

  On the other hand, if the temperature monitor value V1 is outside the lower limit V31 and the upper limit V32 of the mode transition threshold and is smaller than the lower limit V31 of the mode transition threshold (step S47), the process proceeds to the high temperature abnormality detection mode M3 (step S48).

  Then, in the high temperature abnormality detection mode M3, the temperature monitor value V2 is compared with the lower limit V11 of the abnormality determination threshold (step S50), and if the temperature monitor value V2 falls below the lower limit V11 of the abnormality determination threshold, the upper system is notified of the abnormality. (Step S52). Then, the process shifts to a temperature monitor start signal input waiting state when the temperature is abnormal (step S53).

  On the other hand, if the temperature monitor value V1 is outside the range between the lower limit V31 and the upper limit V32 of the mode transition threshold and is not smaller than the lower limit V31 of the mode transition threshold (step S47), the process proceeds to the low temperature abnormality detection mode M1 (step S49). .

  Then, in the low temperature abnormality detection mode M1, the temperature monitor value V2 is compared with the upper limit V12 of the abnormality determination threshold (step S51), and if the temperature monitor value V3 exceeds the upper limit V12 of the abnormality determination threshold, the upper system is notified of the abnormality. (Step S52). Then, the process shifts to a temperature monitor start signal input waiting state when the temperature is abnormal (step S53).

  Here, by switching the output value VL of the amplifier 12 and the output value VH of the amplifier 13 and inputting them to the microcomputer 31, the number of analog input terminals of the microcomputer 31 can be reduced, and the cost of the microcomputer 31 can be reduced. Can be achieved.

Embodiment 4 FIG.
FIG. 9 is a block diagram showing a schematic configuration of the millimeter wave radar module according to the fourth embodiment of the present invention. In FIG. 9, an FM-CW (Frequency Modulated Continuous Wave) radar will be described as an example of the millimeter wave radar module.

  In FIG. 9, the FM-CW radar is provided with a transmission antenna 101 that irradiates a target with a transmission wave and a reception antenna 102 that receives a reflected wave reflected from the target. Further, the millimeter wave transmission / reception module is provided with a high frequency circuit 112 connected to the transmission antenna 101 and the reception antenna 102, and a signal processing unit 113 and a control circuit 111 connected to the high frequency circuit 112.

  The high-frequency circuit 112 receives a VCO modulation voltage that is a transmission command (triangular wave voltage signal) from the signal processing unit 113 and generates a frequency-modulated high-frequency signal, and a high-frequency signal output from the voltage-controlled oscillator 104 A directional coupler 103 that provides most of the signal to the transmitting antenna 101 and the rest to the mixer 105 as a local signal, a mixer 105 that performs frequency conversion (down-conversion) on the received signal of the receiving antenna 102 with the local signal, and conversion of the mixer 105 And a video amplifier 106 that amplifies the output and supplies it to the signal processing unit 113 as a received signal. Note that each element of the high-frequency circuit 103 can be configured by an MMIC (Microwave Monolithic IC).

  The signal processing unit 113 converts the transmission signal (triangular wave voltage signal) from the microcomputer 109 that mainly performs transmission processing and measurement processing in the FM-CW radar into an analog signal, and controls the voltage of the high-frequency circuit 112. A D / A converter 7 provided to the oscillator 104 and an A / D converter 108 which converts a received signal from the video amplifier 106 of the high frequency circuit 112 into a digital signal and supplies the digital signal to the microcomputer 109 are provided. An ambient temperature monitor 110 that captures the ambient temperature is connected to the microcomputer 109.

  The control circuit 111 controls various control voltages supplied to each MMIC in the high frequency circuit 112 under the control of the microcomputer 109. Specifically, since each MMIC in the high-frequency circuit 112 varies depending on the manufacturing lot, the control voltage value that is individually adjusted and determined for each product of the millimeter wave radar module is determined in the nonvolatile memory 114 in the microcomputer 109. Can be stored. In actual operation, the microcomputer 109 can read the control voltage value from the nonvolatile memory 114 and supply it to each MMIC in the high-frequency circuit 112 via the control circuit 111.

  The microcomputer 109 can change the voltage applied to each MMIC in the high-frequency circuit 112, the VCO modulation voltage, and the like for each temperature based on the temperature monitor value by the ambient temperature monitor 110.

  The millimeter wave radar module can be equipped with the temperature abnormality detection device of FIG. 1, FIG. 5, or FIG. The temperature abnormality detection device may be made into an ASIC together with the control circuit 111.

  Here, by installing the temperature abnormality detection device of FIG. 1, FIG. 5 or FIG. 7 in the millimeter wave radar module, it is possible to improve the accuracy detection of the ambient temperature abnormality and accurately provide a protection request dialog to the host system. You can be notified.

  The voltage controlled oscillator 104 receives a VCO modulation voltage that is a triangular wave voltage signal from the signal processing circuit 113, and is a high-frequency signal composed of an ascending modulation signal whose frequency rises within a certain period and a descending modulation signal that falls within a certain period. An FM-CW signal is generated. Most of the FM-CW signal is supplied from the directional coupler 103 to the transmission antenna 101, and millimeter wave radio waves are emitted from the transmission antenna 101 toward the target. The remaining FM-CW signals are supplied to the mixer 105 as local signals.

  The reflected wave at the target captured by the receiving antenna 102 is input to the mixer 105 as a received signal. The mixer 105 mixes the received signal from the receiving antenna 102 and the local signal from the directional coupler 103, and outputs a beat signal having a frequency difference between the two. The beat signal is appropriately amplified to a desired level by the video amplifier 106 and input to the microcomputer 109 via the A / D converter 108. The microcomputer 109 obtains the distance to the target object and the moving speed of the target object from the frequency in the rising modulation period and the frequency in the falling modulation period in the input beat signal.

  As described above, the temperature abnormality detection device according to the present invention can improve the temperature detection accuracy at high and low temperatures, and is suitable for a method of detecting the temperature of the millimeter wave radar module.

R1, R2 Resistance Rt Thermistor 11, 21, 31, 109 Microcomputer 11a, 31a Normal temperature monitoring unit 11b, 31b Threshold judgment unit 11c Low temperature abnormality detection unit 11d High temperature abnormality detection unit 12, 13 Amplifier 21a Low temperature side converted value calculation unit 21b High temperature side converted value calculation unit 31c Abnormality detection unit SW1, SW2 Switch 101 Transmitting antenna 102 Receiving antenna 103 Directional coupler 104 Voltage controlled oscillator 105 Mixer 106 Video amplifier 107 D / A converter 108 A / D converter 110 Ambient temperature monitor 111 Control Circuit 112 High Frequency Circuit 113 Signal Processing Unit 114 Nonvolatile Memory

Claims (10)

A temperature monitoring unit that monitors the temperature based on an output voltage that changes according to the temperature;
A threshold determination unit that determines a magnitude relationship between the temperature monitored by the temperature monitor unit and the threshold;
A first amplifying section for increasing the gradient of the output voltage on the low temperature side with respect to the temperature;
A second amplifying section for increasing the gradient of the output voltage on the high temperature side with respect to the temperature;
Based on the determination result by the threshold determination unit, a low temperature abnormality detection unit that detects a low temperature abnormality from the output voltage amplified by the first amplification unit,
A temperature abnormality detection device comprising: a high temperature abnormality detection unit that detects a high temperature abnormality from the output voltage amplified by the second amplification unit based on a determination result by the threshold determination unit.   The temperature abnormality detection device according to claim 1, wherein the temperature monitoring unit, the threshold determination unit, the low temperature abnormality detection unit, and the high temperature abnormality detection unit are configured by a microcomputer. A temperature monitoring unit that monitors the temperature based on an output voltage that changes according to the temperature;
A threshold determination unit that determines a magnitude relationship between the temperature monitored by the temperature monitor unit and the threshold;
A low temperature side conversion value calculation unit that calculates a low temperature side conversion value so that a change in the output voltage on the low temperature side with respect to the temperature becomes large;
A high-temperature side converted value calculation unit that calculates a high-temperature side converted value so that a change in the high-temperature side output voltage with respect to the temperature increases,
Based on the determination result by the threshold determination unit, a low temperature abnormality detection unit that detects a low temperature abnormality from the low temperature side converted value,
A temperature abnormality detection device comprising: a high temperature abnormality detection unit that detects a high temperature abnormality from the high temperature side converted value based on a determination result by the threshold determination unit.   The temperature monitor unit, the threshold value determination unit, the low temperature side converted value calculation unit, the high temperature side converted value calculation unit, the low temperature abnormality detection unit, and the high temperature abnormality detection unit are configured by a microcomputer. The temperature abnormality detection device according to claim 3. When the temperature monitored by the temperature monitoring unit falls below the lower limit of the mode transition threshold, the threshold determination unit causes the low temperature abnormality detecting unit to detect a low temperature abnormality, and the temperature monitored by the temperature monitoring unit is in the mode. 5. The temperature abnormality detection device according to claim 1, wherein when the upper limit of the transition threshold is exceeded , the threshold determination unit causes the high temperature abnormality detection unit to detect a high temperature abnormality. A temperature monitoring unit that monitors the temperature based on an output voltage that changes according to the temperature;
A threshold determination unit that determines a magnitude relationship between the temperature monitored by the temperature monitor unit and the threshold;
A first amplifying section for increasing the gradient of the output voltage on the low temperature side with respect to the temperature;
A second amplifying section for increasing the gradient of the output voltage on the high temperature side with respect to the temperature;
Based on the determination result by the threshold determination unit, an abnormality detection unit that detects a low temperature abnormality or a high temperature abnormality from the output voltage amplified by the first amplification unit or the second amplification unit;
Based on a determination result of the threshold determination unit, temperature, characterized in that it comprises a switch for switching the output of the previous Kikoto normal detection portion between said first amplifying portion and the second amplifying unit abnormality Detection device.   The temperature abnormality detection apparatus according to claim 6, wherein the temperature monitoring unit, the threshold value determination unit, and the abnormality detection unit are configured by a microcomputer. When the temperature monitored by the temperature monitoring unit falls below the lower limit of the mode transition threshold, the threshold determination unit switches the switch to the first amplification unit side and causes the abnormality detection unit to detect a low temperature abnormality. When the temperature monitored by the temperature monitoring unit exceeds the upper limit of the mode transition threshold, the threshold determination unit switches the switch to the second amplification unit side and detects a high temperature abnormality in the abnormality detection unit. The temperature abnormality detection device according to claim 6 or 7, wherein   The temperature abnormality detection device according to claim 1, further comprising a temperature detection circuit configured by a thermistor and a resistor and outputting an output voltage that changes according to the temperature. A transmission antenna for irradiating a target with a transmission wave;
A receiving antenna for receiving a reflected wave reflected from the target;
A temperature detection circuit that outputs an output voltage that changes according to temperature; and
A temperature abnormality detection unit that monitors the temperature based on the output voltage output from the temperature detection circuit, and detects a low temperature abnormality or a high temperature abnormality based on an expanded value of the low temperature side or high temperature side output voltage; and
A signal processing unit for performing transmission processing and measurement processing in the FM-CW radar;
A high-frequency circuit that generates a transmission signal based on a transmission command from the signal processing unit and performs frequency conversion of a reception signal obtained from the reflected wave;
A millimeter wave radar module comprising a control circuit for controlling a control voltage of the high frequency circuit.

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