JP5558339B2 - Manufacturing method of photoelectric conversion module - Google Patents

Description

  The present invention relates to a method for manufacturing a photoelectric conversion module.

  There are various types of photoelectric conversion modules used for photovoltaic power generation and the like. A photoelectric conversion element having a chalcopyrite-based light absorption layer or an amorphous silicon-based light absorption layer typified by CIS (copper indium selenide) must be relatively low-cost and easy to increase in area. Research and development is ongoing.

  In the photoelectric conversion element as described above, a part having an abnormal film physical property such as a pinhole may occur during manufacture. If there is such an abnormal part, the photocurrent locally decreases or the leakage current increases, etc., so that the photoelectric conversion efficiency of the photoelectric conversion element is remarkably lowered or its reliability is lowered. There is.

  Depending on the film properties as described above, a reverse bias voltage is applied to the photoelectric conversion element of an amorphous silicon type, and the heat generation point at that time is observed with an infrared camera to detect a leakage current. A repair method is known in which, after the occurrence location is specified, this leak current occurrence location is irradiated with laser light, and the electrode and the like at that portion are removed (see Patent Document 1).

JP-A-9-266322

  The photoelectric conversion element repaired by removing the physical property abnormality portion is sealed with a translucent resin or the like to form a photoelectric conversion module. In this photoelectric conversion module, when light is incident on a part from which the physical property abnormality part has been removed, the light passes through the translucent resin disposed in the part and is reflected by the lower electrode of the photoelectric conversion element. It becomes easy to be released outside. Thereby, in such a photoelectric conversion module, the light confinement effect is weakened, and the photoelectric conversion efficiency may be lowered.

  This invention is made | formed in view of the said subject, The objective is to provide the photoelectric conversion module which improved the photoelectric conversion efficiency.

  A method for manufacturing a photoelectric conversion module according to an embodiment of the present invention includes a photoelectric conversion layer including a light absorption layer, a first light-transmissive member provided on the photoelectric conversion layer, and the first light-transmissive member. It is a manufacturing method of a photoelectric conversion module provided with the provided translucent board | substrate, Comprising: The process of specifying the physical property abnormality location of the said photoelectric converting layer is provided. Further, in the present embodiment, a step of forming a penetration part in the photoelectric conversion layer to electrically separate or remove the physical property abnormality part from a normal part of the photoelectric conversion layer, and the penetration part to the first part And a step of filling a second translucent member having a refractive index different from that of the translucent member.

A photoelectric conversion module according to an embodiment of the present invention includes a photoelectric conversion layer including a light absorption layer,
A first translucent member provided on the photoelectric conversion layer; and a translucent substrate provided on the first translucent member. In the photoelectric conversion module according to this embodiment, the photoelectric conversion layer includes a through-hole formed so as to electrically separate or remove a physical property abnormality portion of the photoelectric conversion layer from a normal portion of the photoelectric conversion layer. The penetrating portion is filled with a second light transmissive member having a refractive index different from that of the first light transmissive member.

  In the photoelectric conversion module manufactured by the method for manufacturing a photoelectric conversion module according to an embodiment of the present invention, when light enters the second light transmissive member, the first light transmissive member and the second light transmissive member. The light is refracted by the difference in refractive index and the light easily enters the inner peripheral surface of the photoelectric conversion layer facing the penetrating portion, so that the amount of light contributing to photoelectric conversion can be increased. As a result, in this embodiment, the photoelectric conversion efficiency of the photoelectric conversion module can be increased.

It is a top view which shows the structure of the photoelectric conversion module which concerns on embodiment of this invention. FIG. 2 is an XZ sectional view at a position indicated by a one-dot chain line AA in FIG. 1. It is XZ sectional drawing in the position shown with the dashed-two dotted line BB in FIG. It is a schematic diagram for demonstrating the mode of incidence of light. It is a schematic diagram which shows an example of the manufacturing apparatus of the photoelectric conversion module which concerns on embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 to 3 are provided with a right-handed xyz coordinate system in which the arrangement direction of photoelectric conversion cells 10 (the horizontal direction in the drawing in FIG. 2) is the x-axis direction. First, the structure of the photoelectric conversion module produced with the manufacturing method of the photoelectric conversion module which concerns on embodiment of this invention is demonstrated.

  As shown in FIGS. 1 to 3, in the photoelectric conversion module M, a first light transmissive member 21 and a light transmissive substrate 22 are sequentially stacked on a photoelectric conversion device 20 in which the photoelectric conversion cells 10 are formed. ing. Next, each member constituting the photoelectric conversion module will be described in detail.

  The photoelectric conversion device 20 has a configuration in which a plurality of photoelectric conversion cells 10 are arranged in parallel on a substrate 1. In FIG. 2, only two photoelectric conversion cells 10 are shown for convenience of illustration, but in the actual photoelectric conversion device 20, in the horizontal direction of the drawing, or further in the vertical direction of the drawing perpendicular thereto, A large number of photoelectric conversion cells 10 are arranged in a plane (two-dimensionally).

  Each photoelectric conversion cell 10 mainly includes a lower electrode layer 2, a photoelectric conversion layer 3, an upper electrode layer 4, a grid electrode 5, and a connection portion 45. In the photoelectric conversion device 20 and the photoelectric conversion module M, the main surface on the side where the upper electrode layer 4 and the grid electrode 5 are provided is the light receiving surface side. Further, the photoelectric conversion device 20 is provided with three types of groove portions, that is, a first groove portion P1, a second groove portion P2, and a third groove portion P3.

  The substrate 1 is for supporting a plurality of photoelectric conversion cells 10. Examples of the material used for the substrate 1 include glass, ceramics, resin, and metal. Here, a blue plate glass (soda lime glass) having a thickness of about 1 mm to 3 mm is used as the substrate 1.

  The lower electrode layer 2 is a metal such as Mo (molybdenum), Al (aluminum), Ti (titanium), Ta (tantalum), or Au (gold) provided on one main surface of the substrate 1, or these It is a conductor layer made of a metal laminate structure. The lower electrode layer 2 is formed to a thickness of about 0.2 μm to 1 μm using a known thin film forming method such as sputtering or vapor deposition.

  The photoelectric conversion layer 3 has a configuration in which a light absorption layer 31 and a buffer layer 32 are stacked.

  The light absorption layer 31 is a semiconductor layer having a p-type conductivity type and made of a chalcopyrite (also referred to as CIS) I-III-VI group compound provided on the lower electrode layer 2. The light absorption layer 31 has a thickness of about 1 μm to 3 μm.

Here, the I-III-VI group compound is a group IB element (also referred to as a group 11 element), a group III-B element (also referred to as a group 13 element), and a group VI-B element (also referred to as a group 16 element). ) And a compound. Examples of the I-III-VI group compound include CuInSe ₂ (also referred to as copper indium selenide, CIS), Cu (In, Ga) Se ₂ (also referred to as copper indium diselenide / gallium, CIGS), Cu ( In, Ga) (Se, S) ₂ (also referred to as diselene, copper indium gallium sulfide, gallium, CIGSS). The light absorption layer 31 may be formed of a thin film of a multicomponent compound semiconductor such as copper indium selenide / gallium having a thin film of selenide / copper indium sulfide / gallium as a surface layer.

  The light absorption layer 31 may be a semiconductor layer made of a II-VI group compound. The II-VI group compound is a compound semiconductor of a group II-B (also referred to as a group 12 element) and a group VI-B element. However, I-III-VI compound semiconductors, which are chalcopyrite compound semiconductors, may be used from the viewpoint of reducing the layer thickness and increasing the photoelectric conversion efficiency at low cost with a small amount of material.

  The light absorption layer 31 can be formed by a so-called vacuum process such as sputtering or vapor deposition, and a complex solution of the constituent elements of the light absorption layer 31 is applied on the lower electrode layer 2 and then dried and heat-treated. It can also be formed by a process called a coating method or a printing method. However, from the viewpoint of reducing the manufacturing cost of the photoelectric conversion device 20, the latter process is preferably used.

  The buffer layer 32 is a semiconductor layer provided on the light absorption layer 31 and having an n-type conductivity type different from the conductivity type of the light absorption layer 31. The buffer layer 32 is provided in a mode of heterojunction with the light absorption layer 31 when the light absorption layer 31 is made of an I-III-VI group compound semiconductor. In the photoelectric conversion cell 10, photoelectric conversion occurs in the light absorption layer 31 and the buffer layer 32 constituting the heterojunction, and thus the photoelectric conversion layer 3 in which the light absorption layer 31 and the buffer layer 32 function as a photoelectric conversion unit; It has become. In addition, the structure of the photoelectric converting layer 3 is not limited to this, The semiconductor layer of a different conductivity type may be a homojunction. Here, semiconductors having different conductivity types are semiconductors having different conductive carriers.

The buffer layer 32 is made of, for example, CdS (cadmium sulfide), In ₂ S ₃ (indium sulfide), ZnS (zinc sulfide), ZnO (zinc oxide), In ₂ Se ₃ (indium selenide), In (OH, S). , (Zn, In) (Se, OH), and (Zn, Mg) O. From the viewpoint of reducing leakage current, the buffer layer 32 preferably has a resistivity of 1 Ω · cm or more.

  Further, the buffer layer 32 may have a thickness of 10 nm to 200 nm, for example. If this thickness is 100 nm-200 nm, the fall of the photoelectric conversion efficiency in high-temperature, high-humidity conditions can be reduced more. The buffer layer 32 is formed by, for example, a chemical bath deposition (CBD) method.

  The upper electrode layer 4 has a function as an electrode for extracting charges generated in the photoelectric conversion layer 3. The upper electrode layer 4 includes what is called a window layer, and when a transparent conductive film is further provided in addition to the window layer, these can be regarded as the upper electrode layer 4 together.

For the upper electrode layer 4, for example, indium oxide (ITO) containing tin is used. Such an upper electrode layer 4 is formed to a thickness of 0.05 μm to 3.0 μm by, for example, sputtering, vapor deposition, or chemical vapor deposition (CVD). And from a viewpoint of taking out an electric charge favorably from the photoelectric converting layer 3, the upper electrode layer 4 is good in a resistivity being less than 1 ohm * cm and sheet resistance being 50 ohms / square or less.

  The buffer layer 32 and the upper electrode layer 4 are preferably made of a material having light permeability with respect to the wavelength region of light absorbed by the light absorption layer 31. Thereby, the fall of the light absorption efficiency in the light absorption layer 31 by providing the buffer layer 32 and the upper electrode layer 4 is reduced.

  From the viewpoint of enhancing the light transmittance, at the same time enhancing the effect of preventing loss of light reflection and the light scattering effect, and further transmitting the current generated by the photoelectric conversion, the upper electrode layer 4 has a thickness of 0.05 μm to The thickness is preferably 0.5 μm. Further, from the viewpoint of preventing light reflection loss at the interface between the upper electrode layer 4 and the buffer layer 32, it is preferable that the refractive indexes of the upper electrode layer 4 and the buffer layer 32 are equal.

  The grid electrodes 5 are provided apart from each other in the y-axis direction, and each of the current collectors 5a is connected to the plurality of current collectors 5a extending in the x-axis direction and extends in the y-axis direction. It is an electrode which has electroconductivity provided with connecting part 5b to do. The grid electrode 5 is made of a metal such as Ag, for example.

  The current collector 5 a plays a role of collecting charges generated in the photoelectric conversion layer 3 and taken out in the upper electrode layer 4. On the other hand, since the upper electrode layer 4 is provided above the light absorption layer 31, it is preferable to form it as thin as possible in order to improve light transmittance. Even if the resistance value of the upper electrode layer 4 itself increases as the thickness of the upper electrode layer 4 is reduced, it is possible to efficiently collect current by providing such a current collector 5a. Therefore, the upper electrode layer 4 can be thinned.

  The charges collected by the grid electrode 5 and the upper electrode layer 4 are transmitted to the adjacent photoelectric conversion cell 10 through the connection part 45 provided in the second groove part P2. The connection part 45 is comprised by the extension part 4a of the upper electrode layer 4, and the drooping part 5c from the connection part 5b formed on it. Thereby, in the photoelectric conversion apparatus 20, one lower electrode layer 2 of the adjacent photoelectric conversion cell 10, the other upper electrode layer 4 and the grid electrode 5 are connected to each other by the connection portion 45 provided in the second groove portion P2. The connection conductor is electrically connected in series.

  The grid electrode 5 has a width of 50 μm to 400 μm from the viewpoint of minimizing the reduction in the light receiving area that affects the amount of light incident on the light absorption layer 31 while ensuring good conductivity. Is preferred.

  Note that at least the surface of the connecting portion 5b of the grid electrode 5 is preferably formed of a material that reflects light in the wavelength region absorbed by the light absorption layer 31. Such a configuration is, for example, by adding metal particles such as silver having a high light reflectivity to a translucent resin, or depositing a metal having a high light reflectivity such as aluminum on the surface of the connecting portion 5b. Etc. can be formed. In this case, when the photoelectric conversion device 20 is modularized, the light reflected by the connecting portion 5b can be reflected again in the photoelectric conversion module M and incident again on the light absorption layer 31. Thereby, the incident amount of light with respect to the light absorption layer 31 increases, and the photoelectric conversion efficiency in the photoelectric conversion module M improves by extension.

  In addition, at least the current collector 5a of the grid electrode 5 preferably includes solder. Thereby, about the grid electrode 5, while the tolerance with respect to a bending stress is improved, an electrical resistance can be reduced more.

  Further, the grid electrode 5 includes two or more kinds of metals having different melting points, is heated at a temperature at which at least one kind of metal is not melted, and is melted by at least one kind of metal and then cured by cooling. It should be formed. In this case, since the metal having a low melting point is melted in the forming process, the grid electrode 5 is densified and the resistance is reduced. At that time, the spread of the molten metal is reduced by the high melting point metal that is not melted.

  In the photoelectric conversion layer 3, when a physical property abnormality part such as a pinhole is generated during the production of the light absorption layer 31 and the buffer layer 32, a penetration part for electrically separating or removing the physical property abnormality part from the normal part 6 is formed. The through portion 6 is formed along the stacking direction of the photoelectric conversion layer 3. In penetration part 6, penetration part 6a shown in Drawing 1 and Drawing 3 is formed so that a physical property abnormal part of photoelectric conversion layer 3 may be removed. On the other hand, the penetrating portion 6b shown in FIGS. 1 and 3 leaves the abnormal physical property portion of the photoelectric conversion layer 3 on the lower electrode layer 2 so as to be electrically separated from the normal portion of the photoelectric conversion layer 3. Is formed. In other words, the penetrating portion 6b is formed so as to surround an abnormal physical property location. As shown in FIG. 1, such a penetrating portion 6 b may be formed concentrically with abnormal physical properties when the photoelectric conversion layer 3 is viewed from above, but is not limited thereto.

  For example, like the through portion 6c shown in FIG. 1, the photoelectric conversion layer 3 may be formed in an elliptical shape when viewed from the top. Further, for example, like the penetrating part 6d shown in FIG. 1, the photoelectric conversion layer 3 may be formed so as to surround a physical property abnormality portion with a linear penetrating part when viewed from above. Moreover, when the physical property abnormality location arises in the corner | angular part of the photoelectric converting layer 3, the penetration part 6 may be formed so that the said corner | angular part may be notched. In addition, the formation method of the penetration part 6 is mentioned later.

  The penetrating portion 6 is filled with a second light transmissive member 7. The 2nd translucent member 7 has translucency of the grade which can permeate | transmit the light of the wavelength which contributes to photoelectric conversion. The second light transmissive member 7 has a refractive index different from that of the first light transmissive member 21. Accordingly, since a refractive index is generated at the interface between the first light transmissive member 21 and the second light transmissive member 7, the optical path of light incident on the interface changes.

  For example, as illustrated in FIG. 4, when the light L <b> 1 enters the photoelectric conversion module M and reaches the second light transmissive member 7, the light L <b> 1 is between the second light transmissive member 7 and the first light transmissive member 21. The light is reflected. When this reflected light reaches the translucent substrate 22 through the first translucent member 21, it is reflected again by the back surface of the translucent substrate 22 and enters the photoelectric conversion layer 3. Thereby, the effect of confining light in the photoelectric conversion module M increases, and as a result, the photoelectric conversion module M can increase the photoelectric conversion efficiency.

  In addition, as shown in FIGS. 3 and 4, the second light transmissive member 7 is formed so as to be a convex portion that protrudes toward the light transmissive substrate 22. Since the contact area (area of the interface) with the optical member 21 can be increased, more light can be reflected. Further, as shown in FIG. 3 and FIG. 4, if such a convex portion is formed so as to protrude from the surface of the photoelectric conversion layer 3 on the translucent substrate 22 side to the translucent substrate 22 side, it is convex. The distance between the top of the part and the back surface of the translucent substrate 22 can be reduced. Thereby, since the distance until the light reflected by the said convex part reflects on the back surface of the translucent board | substrate 22, and injects into the photoelectric converting layer 3 again can be made small, the loss of light becomes small. Moreover, such a convex part should just protrude about 5-200 micrometers from the surface of the upper electrode layer 4. FIG.

The second translucent member 7 is a material having translucency to such an extent that light such as sunlight contributing to photoelectric conversion can be transmitted, and having a different refractive index from the first translucent member 21 as described above. It is configured. As such a material, when the 1st translucent member 21 is comprised with the ethylene vinyl acetate copolymer (EVA), an acrylic resin, polycarbonate resin, an epoxy resin, a polyimide resin, a silicone resin, a polysulfone resin (PSF) ), A resin having insulating properties such as polyethylene terephthalate resin (PET), glass, or the like.

  In addition, when the light L2 is incident at an angle as illustrated in FIG. 4, the photoelectric conversion module M is configured such that the refractive index of the second light transmissive member 7 is larger than the refractive index of the first light transmissive member 21. Incident light is easily refracted in a direction parallel to the surface of the lower electrode layer 2. Thereby, the refracted light easily enters the inner peripheral surface of the photoelectric conversion layer 3 facing the penetrating portion 6, that is, the surface of the photoelectric conversion layer 3 in contact with the second light transmissive member 7. As a result, with such a photoelectric conversion module M, light such as light L2 whose angle with the surface of the photoelectric conversion layer 3 is smaller than the light L1 can be incident on the photoelectric conversion layer 3. The photoelectric conversion efficiency can be further increased. As the material of the second translucent member 7, when the first translucent member 21 is made of EVA, for example, polycarbonate resin, epoxy resin, polysulfone resin (PSF), and polyethylene terephthalate resin (PET). ).

  The first light transmissive member 21 has a function of sealing the photoelectric conversion device 20. From such a viewpoint that the first translucent member 7 has translucency that allows light having a wavelength that contributes to photoelectric conversion to pass therethrough and moisture resistance against moisture and the like, an ethylene vinyl acetate copolymer (EVA). Is used. The thickness of the first translucent member 21 is, for example, about 0.3 mm to 1 mm.

  The translucent substrate 22 is provided on the first translucent member 21 and protects moisture and foreign matter from entering the photoelectric conversion module M from the outside. As the translucent substrate 22, for example, a flat glass substrate or the like is used.

  Next, an embodiment of a method for manufacturing a photoelectric conversion module will be described. In the present embodiment, a case where the light absorption layer 31 made of an I-III-VI group compound semiconductor is formed using a coating method or a printing method and the buffer layer 32 is further formed will be described as an example.

  First, the lower electrode layer 2 made of Mo or the like is formed on the substantially entire surface of the cleaned substrate 1 using a sputtering method or the like. Then, the first groove portion P1 is formed from the linear formation target position along the Y direction on the upper surface of the lower electrode layer 2 to the upper surface of the substrate 1 immediately below the formation position. The first groove portion P1 is preferably formed by scribe processing, in which groove processing is performed by irradiating the formation target position while scanning with YAG laser or other laser light.

  After the first groove portion P1 is formed, the light absorption layer 31 and the buffer layer 32 are sequentially formed on the lower electrode layer 2. The light absorption layer 31 is formed by applying a solution for forming the light absorption layer 31 to the surface of the lower electrode layer 2, forming a film by drying, and then heat-treating the film. The solution for forming the light absorption layer 31 directly dissolves the group IB metal and the group III-B metal in a solvent (also simply referred to as a mixed solvent) containing a chalcogen element-containing organic compound and a basic organic solvent. Thus, the total concentration of the group I-B metal and the group III-B metal is 10 wt% or more. For the application of this solution, various methods such as spin coater, screen printing, dipping, spraying, and die coater can be applied.

  The chalcogen element-containing organic compound is an organic compound containing a chalcogen element. The chalcogen element refers to S, Se, or Te among VI-B group elements. Examples of the chalcogen element-containing organic compound include thiol, sulfide, disulfide, selenol, selenide, diselenide and the like.

As a specific process, for example, in a mixed solvent in which benzeneselenol is dissolved at 100 mol% with respect to pyridine, bullion copper, bullion indium, bullion gallium, and bullion selenium. After the solution prepared by directly dissolving is applied by the blade method and dried to form a film, heat treatment is performed in an atmosphere of hydrogen gas. To directly dissolve a metal in a mixed solvent means to dissolve a single metal or alloy ingot directly into the mixed solvent and dissolve it. Drying is desirably performed in a reducing atmosphere. The drying temperature is, for example, 50 ° C to 300 ° C. The heat treatment is preferably performed in a reducing atmosphere so as to reduce oxidation and obtain a good I-III-VI compound semiconductor. The reducing atmosphere may be any one of a nitrogen atmosphere, a forming gas atmosphere, and a hydrogen atmosphere. The heat treatment temperature is, for example, 400 ° C to 600 ° C.

  The buffer layer 32 is formed by a solution growth method (CBD method). For example, the buffer layer 32 made of CdS is formed in the light absorption layer 31 by immersing the substrate 1 in which cadmium acetate and thiourea are dissolved in ammonia and the light absorption layer 31 is formed. Process.

  After the photoelectric conversion layer 3 is formed by the light absorption layer 31 and the buffer layer 32, the linear formation target position along the Y direction in the upper surface of the buffer layer 32 is extended to the upper surface of the lower electrode layer 2 immediately below the formation layer. A second groove portion P2 is formed. The second groove portion P2 is formed, for example, by performing scribing using a scribe needle having a scribe width of about 40 μm to 50 μm continuously several times while shifting the pitch. Further, the second groove portion P2 may be formed by scribing after the tip shape of the scribe needle is expanded to an extent close to the width of the second groove portion P2. Alternatively, two or more scribe needles may be fixed in a state where they are in contact with each other or close to each other, and may be formed by performing scribing once to several times. The second groove portion P2 is formed at a position slightly shifted in the X direction from the first groove portion P1.

  After the second groove portion P2 is formed, the transparent upper electrode layer 4 mainly composed of indium oxide (ITO) containing tin, for example, is formed on the buffer layer 32. The upper electrode layer 4 is formed by sputtering, vapor deposition, CVD, or the like.

  After the upper electrode layer 4 is formed, the grid electrode 5 is formed. The grid electrode 5 is formed, for example, by printing a conductive paste in which a metal powder such as Ag is dispersed in a resin binder or the like in a pattern, drying it, and solidifying it. Solidification includes the solidified state after melting when the binder used in the conductive paste is a thermoplastic resin, and after curing when the binder is a curable resin such as a thermosetting resin or a photocurable resin. The state of is also included.

  After the grid electrode 5 is formed, a third groove portion P3 is formed from the linear formation target position on the upper surface of the upper electrode layer 4 to the upper surface of the lower electrode layer 2 immediately below the formation position. The width of the third groove portion P3 is preferably about 40 μm to 1000 μm, for example. Further, the third groove portion P3 is preferably formed by mechanical scribing similarly to the second groove portion P2. By the formation of the third groove portion P3, the photoelectric conversion device 20 before being filled with the second light transmissive member 7 is formed.

  Next, the formation method of the penetration part 6 which pinpoints the physical property abnormality location of the photoelectric converting layer 3, and electrically isolates or removes this physical property abnormality location from a normal location is demonstrated. In the following description, the photoelectric conversion device before being filled with the second translucent member 7 is referred to as a photoelectric conversion device 20A for convenience.

  First, a forward bias voltage is applied between the electrodes of the lower electrode layer 2 and the upper electrode layer 4 of the photoelectric conversion device 20A by a forward bias voltage applying means (voltage application unit). Thereby, electroluminescence (hereinafter abbreviated as EL) emitted from the photoelectric conversion device 20A is detected by the EL emission detection means (detection unit).

  By observing the EL from the photoelectric conversion device 20A, the current density distribution in the photoelectric conversion device 20A when the forward bias voltage is applied can be confirmed. As a result, the non-uniformity of the current density distribution results in the photoelectric conversion device 20A. An abnormality in physical properties of the photoelectric conversion layer 3 can be confirmed. At this time, in a portion where the emission intensity is small compared to a portion where no EL light is emitted or other portions, a portion having a high pn junction defect, presence of microcracks, composition deviation, defect density that is likely to cause recombination, each layer, electrode, and semiconductor An abnormality in physical properties such as an abnormality in contact resistance between layers exists. Note that the above abnormal part specifying means (specific unit) is not limited to EL light emission detection, and may detect infrared rays generated when a forward bias voltage or a reverse bias voltage is applied to the photoelectric conversion device 20A. . In this way, by detecting the intensity distribution of electromagnetic waves such as EL and infrared rays, it is possible to identify an abnormality in the physical properties of the photoelectric conversion layer 3 in the photoelectric conversion device 20A.

  Next, the state of EL emission in the photoelectric conversion layer 3 is observed by the above-described abnormal location specifying means, the physical property abnormal location is specified, and the coordinates of the physical property abnormal location are stored in the storage means.

  Next, the mutual position of the mechanical scribe execution means (machining unit) controlled by the mechanical scribe position control means and the photoelectric conversion device 20A is adjusted based on the stored positional information of the physical property abnormality location.

  Then, the penetration part 6 which electrically isolates the physical property abnormality location of the photoelectric converting layer 3 from the periphery of the normal location of the photoelectric converting layer 3 is formed by mechanical scribing means. Moreover, in this mechanical scribing means, the penetrating part 6 can also be formed so as to remove a physical property abnormality location.

  Next, an example of a manufacturing apparatus (repair apparatus) for forming the through hole 6 will be described with reference to FIG. The repair apparatus includes a mounting table 11, a voltage application unit 12, an observation camera 13 that forms part of a detection unit, a computer 14 that is a specific unit, and a display 15. Furthermore, the repair device in the present embodiment includes a sequencer 16, a servo motor 17, a scriber up-and-down means 18, and a scriber 19.

  The mounting table 11 is made of, for example, a flat plate made of stainless steel having a thickness of about 10 mm, and a plurality of through holes (not shown) are provided at a substantially central portion thereof. Then, the pressure reducing means such as a vacuum pump arranged in the vicinity of the mounting table 11 can fix the photoelectric conversion device 20A mounted on the mounting table 11 to a predetermined position through the through hole. It is. Further, the mounting table 11 can be moved by a servo motor 17 controlled by a sequencer 16.

  The scriber 19 is moved up and down by scriber up-and-down means 18 controlled by a sequencer 16 such as an air cylinder.

  Next, the operation of the repair device will be described. The photoelectric conversion device 20A mounted and fixed at a predetermined position on the mounting table 11 is forward biased between its electrodes (between the lower electrode layer 2 and the upper electrode layer 4) by the voltage application unit 12. Applied. The bias voltage value applied to the photoelectric conversion device 20A is about 0.2V to 1V per one photoelectric conversion cell connected in series in the photoelectric conversion device 20A. In addition, the voltage value actually applied becomes this multiplied by the series number of the photoelectric conversion cells 10 in the photoelectric conversion device 20A.

In the photoelectric conversion device 20A, an abnormal physical property portion emits EL when a bias voltage is applied. Therefore, the EL light emission state is imaged by the observation camera 13, and the image signal is output to the computer 14.
Send to. That is, the detection unit including the observation camera 13 has a role of detecting the intensity of electromagnetic waves such as EL light emitted from the photoelectric conversion layer 3. The sent image signal is displayed on the display 15, and the computer 14 A / D converts the EL light emission state of the photoelectric conversion device 20, and the obtained multi-valued image having a predetermined gray level is obtained. Binarization is performed using a threshold value, a dark part is specified, this dark part is determined as a physical property abnormality location, and the two-dimensional coordinates are stored.

  Since the EL light emission of such a photoelectric conversion device 20A is weak, it is preferable to perform imaging by the observation camera 13 in this EL light emission state in a dark room or a dark box in order to avoid the influence of stray light.

  Next, the servo motor 17 is controlled by the sequencer 16, and the placement table 11 on which the photoelectric conversion device 20A is placed is moved to a scribing position where mechanical properties are separated, and further, as shown in FIG. Next, the photoelectric conversion layer 3 is moved so that the physical property abnormality portion is located immediately below the scriber 19. After that, by combining the raising and lowering of the scriber 19 by the scriber raising / lowering means 18 and the movement of the mounting table 11, mechanical scribing is performed on the film around the physical property abnormality portion of the photoelectric conversion layer 3, so that the film at the physical property abnormality portion is electrically By forming the penetrating part 6 so as to be separated or removed, the abnormal physical property part is separated from the normal part. In the above-described embodiment, the physical property abnormality portion is separated or removed by mechanical scribing, but may be performed using a laser.

  Next, the penetrating portion 6 is filled with the second light transmissive member 7. The 2nd translucent member 7 is filled using a dispenser, for example. If such a dispenser is attached to the repair device so as to be adjacent to the scriber 19 and is set to operate after the through portion 6 is formed, the formation of the through portion 6 and the filling of the second translucent member 7 are performed. Can be done continuously. The dispenser is filled with the precursor of the second translucent member 7, and the precursor can be filled into the penetrating portion 6 by operating in the vertical direction, like the scriber 19. Next, the case where the above convex part is formed in the 2nd translucent member 7 is demonstrated. For example, in the case where a convex portion having a height of about 5 μm is formed, the convex portion having a height of about 5 μm can be formed by surface tension by filling the upper electrode layer 4 so as to have the same height. Further, for example, in the case of forming a convex portion having a height of about 200 μm, the second portion is formed when the dispenser is gradually pulled up and raised to about 250 μm to 300 μm after filling the surface of the upper electrode layer 4. It can be formed by stopping the discharge of the translucent member 7. The dispenser may be operated by being attached to a device other than the repair device.

  As described above, after the penetrating portion 6 is filled with the precursor of the second light transmissive member 7, the second light transmissive member 7 is formed by drying and the photoelectric conversion device 20 is manufactured. In addition, the 2nd translucent member 7 may be filled not only in the penetration part 6 but in the 3rd groove part P3. The third groove portion P3 corresponds to a slit of the photoelectric conversion layer 3 formed over the stacking direction of the photoelectric conversion layer 3. Thus, if the 2nd translucent member 7 is provided also in the 3rd groove part P3, the light confinement effect can be heightened more. Furthermore, if the above-mentioned convex part is formed in the 2nd translucent member 7 provided in the 3rd groove part P3, the light confinement effect can be heightened more.

  Next, a laminated body in which the precursor of the first light transmissive member 21 and the light transmissive substrate 22 are arranged on the photoelectric conversion device 20 is formed. Then, when using EVA for the 1st translucent member 21, the said laminated body is crimped | bonded with a laminating apparatus, heating at 150 to 160 degreeC, and the photoelectric conversion module M is produced.

In the above-described embodiment, the photoelectric conversion device 20 includes the chalcopyrite-based light absorption layer 31. However, the photoelectric conversion device 20 includes, for example, a light absorption layer formed of an amorphous silicon-based semiconductor layer. Is possible. In such a photoelectric conversion device, for example, the lower electrode layer is formed of aluminum or nickel, the photoelectric conversion layer is formed of an amorphous silicon semiconductor layer stacked in the order of n-type, i-type, and p-type, and the upper electrode The layer may be formed of indium tin oxide (ITO) containing tin or the like. At this time, the lower electrode layer may be formed to a thickness of 200 nm to 500 nm by an evaporation method or a sputtering method. The photoelectric conversion layer may be formed by sequentially depositing n-type, i-type, and p-type amorphous silicon on the lower electrode layer by plasma CVD or the like. Thereafter, ITO can be formed on the photoelectric conversion layer with a thickness of 100 nm to 600 nm by sputtering or the like to form an upper electrode layer, and then patterned by using a laser or the like as shown in FIG. The amorphous silicon semiconductor layer described above may further contain microcrystalline silicon or polycrystalline silicon.

M: photoelectric conversion module 1: substrate 2: lower electrode layer 3: photoelectric conversion layer 31: light absorption layer 32: buffer layer 4: upper electrode layer 45: connection portion 5: grid electrode 5a: current collector 5b: connecting portion 6 : Penetrating part 7: second translucent member 10: photoelectric conversion cell 11: mounting table 12: voltage application unit 13: observation camera (detection unit)
14: Computer (specific unit)
15: Display 16: Sequencer 17: Servo motor 18: Scriber up / down means 19: Scriber 20: Photoelectric conversion device 21: First translucent member 22: Translucent substrate

Claims (6)

Photoelectric conversion layer including a light absorption layer, first translucent member provided on the photoelectric conversion layer, and method for producing a photoelectric conversion module provided with a translucent substrate provided on the first translucent member And the step of identifying an abnormal physical property of the photoelectric conversion layer;
Forming a penetrating portion in the photoelectric conversion layer, and electrically separating or removing the physical property abnormality part from a normal part of the photoelectric conversion layer;
Filling the penetrating portion with a second light transmissive member having a refractive index different from that of the first light transmissive member.   The method for manufacturing a photoelectric conversion module according to claim 1, wherein a convex portion that protrudes toward the translucent substrate is formed on the second translucent member.   The method for manufacturing a photoelectric conversion module according to claim 2, wherein the convex portion is provided so as to protrude toward the translucent substrate side from the surface of the photoelectric conversion layer on the translucent substrate side.   The method for manufacturing a photoelectric conversion module according to any one of claims 1 to 3, wherein the penetrating portion is formed so as to surround the physical property abnormality portion.   2. The manufacturing of the photoelectric conversion module according to claim 1, further comprising a step of separating the photoelectric conversion layer by a slit formed in the stacking direction and filling the slit with the second translucent member. Method. A photoelectric conversion layer including a light absorption layer;
A first translucent member provided on the photoelectric conversion layer;
A translucent substrate provided on the first translucent member,
The photoelectric conversion layer has a penetration part formed so as to electrically separate or remove a physical property abnormality part of the photoelectric conversion layer from a normal part of the photoelectric conversion layer, and the first part is disposed in the penetration part. A photoelectric conversion module comprising a second light transmissive member having a refractive index different from that of the light transmissive member.

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