JP5556451B2 - Pattern formation method - Google Patents

Description

  The present invention relates to a pattern forming method capable of doubling the resolving power by forming a pattern having a half pitch of the mask pattern by one exposure and development, and a phase shift mask used therefor.

  In recent years, with the high integration and high speed of LSI, there is a demand for finer pattern rules. The shortening of the exposure wavelength, which has promoted miniaturization, has been studied to proceed from ArF excimer laser with a wavelength of 193 nm to vacuum ultraviolet light (EUV) with a wavelength of 13.5 nm, but the power of the light source is considerably low, Development of multilayer reflective mirrors, multilayer reflective masks, and photoresists has been delayed. The NA of projection lenses that have been miniaturized has exceeded 1.0 by immersion lithography, but has already reached the maximum NA determined by the refractive index of water. The conventional method has a problem that further miniaturization cannot be promoted.

  Recently, a double patterning process in which a pattern is formed by the first exposure and development and a pattern is formed just between the first pattern by the second exposure (Non-Patent Document 1 :). Proc.SPIE Vol.5992 59921Q-1-16 (2005)). Many processes have been proposed as a double patterning method. For example, the first exposure and development form a photoresist pattern with 1: 3 line and space spacing, the lower hard mask is processed by dry etching, and another hard mask is laid on the first hard mask. A method of forming a line and space pattern half the pitch of the first pattern by forming a line pattern by exposure and development of a photoresist film in a portion where the exposure pattern is not formed and processing the hard mask by dry etching It is. Further, a photoresist pattern having a space and line spacing of 1: 3 is formed by the first exposure and development, the underlying hard mask is processed by dry etching, and a photoresist film is applied thereon. There is also a method in which the second space pattern is exposed to the portion where the hard mask remains, and the hard mask is processed by dry etching. In either case, the hard mask is processed by two dry etchings.

In the former method, it is necessary to lay a hard mask twice. In the latter method, only one hard mask is required, but it is necessary to form a trench pattern that is difficult to resolve compared to the line pattern. In the latter method, there is a method using a negative resist material for forming a trench pattern. This can use the same high contrast light as forming a line with a positive pattern, but the negative resist material has a lower dissolution contrast than the positive resist material. Compared with the case of forming a line, the case of using a negative resist material to form a trench pattern having the same dimensions is compared. The latter method uses a positive resist material to form a wide trench pattern, then heats the substrate to shrink the trench pattern, or coats a water-soluble film on the developed trench pattern. It is possible to apply the RELACS ^TM method in which the trench is shrunk by heating and then cross-linking the resist film surface, but the disadvantage that the proximity bias is deteriorated and the process is further complicated and the throughput is reduced. Arise.
Even in the former method and the latter method, etching for substrate processing is required twice, so that there is a problem in that throughput is reduced and pattern deformation and displacement occur due to the two etchings.

  In order to complete the etching once, there is a method in which a negative resist material is used in the first exposure and a positive resist material is used in the second exposure. There is also a method in which a positive resist material is used in the first exposure, and a negative resist material dissolved in an alcohol that does not dissolve the positive resist material in the second exposure. In these cases, since a negative resist material having a low resolution is used, the resolution is deteriorated.

  After the first resist pattern is formed, the pattern is insolubilized in some way by a resist solvent and an alkaline developer, the second resist material is applied, and the second resist pattern is formed in the space portion of the first resist pattern. Resist pattern freezing techniques are being studied. If this method is used, the substrate is etched only once, so that the problem of misalignment due to improvement in throughput and stress relaxation of the etching hard mask is avoided.

As a freezing technique, a heat insolubilization method, a cover film application and heat insolubilization method, an insolubilization method by irradiation with light of an extremely short wavelength such as a wavelength of 172 nm, an insolubilization method by ion implantation, an insolubilization method by formation of a thin film oxide film by CVD, And insolubilization methods by light irradiation and special gas treatment have been reported.
In these insolubilization treatments, pattern deformation (particularly film reduction), dimensional thinning or thickening is a problem because high temperature heat treatment is performed.

  The most critical problem in double patterning is the alignment accuracy of the first and second patterns. Since the size of the positional deviation is a variation in line dimensions, for example, if it is attempted to form a 32 nm line with an accuracy of 10%, an alignment accuracy within 3.2 nm is required. Since the alignment accuracy of the current scanner is about 8 nm, a significant improvement in accuracy is necessary.

  If the second exposure is performed at a position shifted by a half pitch next to the first exposure, the energy of the first time and the second time are offset and the contrast becomes zero. When a contrast enhancement film (CEL) is applied on the resist film, the light incident on the resist becomes non-linear, and the first and second lights do not cancel each other, and an image with a half pitch is formed (Non-Patent Document 2: Jpn.J. Appl.Phy.Vol.33 (1994) p6874-6877). In addition, it is expected that a similar effect can be produced by creating a non-linear contrast using a two-photon absorption acid generator as the resist acid generator. When this double imaging method is used, double resolution can be obtained by two exposures and one development.

  Resist materials having both positive and negative characteristics have been proposed. It is difficult to dissolve in an alkali developer at low exposure doses. As the exposure dose is increased, the alkali dissolution rate increases, showing positive resist characteristics. As the exposure dose is further increased, the dissolution rate decreases, and the negative resist The characteristics of When such a resist material is used, a resist film with a small amount of exposure and a portion with a large amount of exposure remains, and a resolution that is twice that of the mask pattern can be obtained. Such positive / negative resist materials include those disclosed in JP-A-10-104835 (Patent Document 1) and Proc. SPIE Vol. 3678 p348 (1999) (Non-Patent Document 3), a positive negative hybrid resist obtained by adding a crosslinking agent, benzyl alcohol described in JP-A-2003-5353 (Patent Document 2), and an acetal acid. Dual tone resist materials using positive and negative competitive reactions due to coexistence of labile groups have been proposed. When a dual tone resist material is used, a double resolution pattern can be obtained by a normal process of one exposure and development.

  The cost of double patterning is a problem. Although the complexity of the additional process between the double patterns is regarded as a problem, the highest cost is the exposure itself twice. If a double pattern can be formed by one exposure, the cost is the cheapest. Further, double patterning and double imaging are processes that cannot be realized unless the alignment accuracy of the exposure apparatus is significantly improved. On the other hand, if a positive-negative hybrid dual-tone resist material can be realized in ArF immersion lithography, the resolution can be doubled by a single exposure, so that the problem of cost and alignment accuracy of the exposure apparatus can be solved, leading technologies of 32 nm and 22 nm. Can be a candidate.

  Here, as photobase generators, nitrobenzyl carbamates (Non-patent Document 4: J. Am. Chem. Soc. 1991, 113, p4303-4313), or a photoresist material to which this is added (Patent Document 3: Japanese Patent Laid-Open No. Hei 5 (1994)). 7-134399, Non-Patent Document 5: Proc. SPIE Vol. 1466 p75 (1991)) has been proposed. A resist material in which a photobase generator is added to a normal positive photoresist material in which a photoacid generator is added to a base polymer having an acid labile group (Patent Document 4: JP-A-10-83079) is also proposed. ing.

  A chromeless phase shift mask for improving contrast is used (Japanese Patent Laid-Open No. 5-249653). Further, it has been reported that the chromeless phase shift mask (CPL) has a higher effect of raising the contrast than the halftone phase shift mask (Non-Patent Document 6: Proc. SPIE Vol. 1496 p27 (1990)). A chromeless phase shift mask has a transparent shifter with a light phase difference of about 180 degrees on a transparent mask substrate such as quartz. Add a transparent shifter on the mask substrate or engrave the mask substrate. It is formed by processing a shifter.

JP 10-104834 A JP 2003-5353 A Japanese Unexamined Patent Publication No. 7-134399 Japanese Patent Laid-Open No. 10-83079 Japanese Patent Laid-Open No. 5-249653

Proc. SPIE Vol. 5992 59921Q-1-16 (2005) Jpn. J. et al. Appl. Phy. Vol. 33 (1994) p 6874-6877 Proc. SPIE Vol. 3678 p348 (1999) J. et al. Am. Chem. Soc. 1991, 113, p4303-4313 Proc. SPIE Vol. 1466 p75 (1991) Proc. SPIE Vol. 1496 p27 (1990)

  As described above, when a substrate pattern is processed by dry etching twice with a resist pattern produced by two exposures and developments, the throughput is reduced to half and the position of the two exposures is shifted. Arise. A dual tone resist having both positive tone and negative tone characteristics is a technology that doubles the resolution by forming a positive pattern and a negative pattern by a single exposure and development, but has a very low sensitivity. is there.

  The present invention has been made in view of such a problem, and a pattern forming method using a dual tone resist for enabling a resolving power twice as large as that of a mask pattern by one exposure and a phase shift used therefor The object is to provide a mask.

  The inventors of the present invention have made extensive studies to solve the above problems, and based on a polymer compound having an acid labile group and hardly soluble in an alkali developer, from an acid quencher and a photobase generator. By combining a resist material with a composition in which the total amount of amino groups in the photoacid generator is greater than the amount of acid from the photoacid generator and a highly transparent phase shift mask, the unexposed and overexposed areas are insoluble in an alkaline developer and intermediate The formation method for obtaining a pattern having a property of dissolving only in the exposure amount portion in the developer and doubling the resolution by dividing one line into two has high sensitivity and high resolution.

Accordingly, the present invention provides the following patterning how.
Claim 1:
A polymer compound containing a repeating unit having an acid labile group, hardly soluble in an alkali developer, a photoacid generator, a photobase generator for generating an amino group, and a photoacid generator having an amino group A resist material containing a quencher that is inactivated by neutralizing the acid generated more and an organic solvent is applied and baked on a substrate, and a highly transparent phase shift mask having a transmittance of 80% or more is used. After the exposure, baking (PEB), and development steps, the film of the unexposed part with a small amount of exposure and the overexposed part with a large amount of exposure are not dissolved in the developer, but the exposed area with an intermediate amount of exposure is dissolved in the developer. a Rupa turn-forming method to obtain a pattern is, photobase generating agent, are those represented by any one of the repeating units a1~a4 in the following general formula (1), said recurring units polymeric compound That is attached to the main chain of Pattern forming method according to symptoms.

(In the formula, R ¹ , R ⁷ , R ¹² and R ¹⁷ are hydrogen atoms or methyl groups. R ² , R ⁸ , R ¹³ and R ¹⁸ are single bonds, methylene groups, ethylene groups, phenylene groups, phenylmethylenes. Group, phenylethylene group, phenylpropylene group, or —C (═O) —O—R ²¹ —, wherein R ²¹ is a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms, or 6 carbon atoms. Is an arylene group having 1 to 10 carbon atoms , or an alkenylene group having 2 to 12 carbon atoms, and R ³ , R ⁹ and R ¹⁴ are a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or carbon Although an aryl group having 6 to 10, the R ²¹ combine with may form a ring together with the nitrogen atom to which they are attached .R ^4, R ^5, R ⁶ is a hydrogen atom, C1-10 A linear, branched or cyclic alkyl group, or an aryl group having 6 to 14 carbon atoms, A C 1-6 linear, branched or cyclic alkyl group, a C 1-6 alkoxy group, a nitro group, a halogen atom, a cyano group, or a trifluoromethyl group. well, R ⁴ and R ^5, R ⁵ and R ^6, or R ⁴ and may be R ⁶ are bonded to form a ring together with the carbon atoms to which they are attached, but the R ^4, R ^5, R ⁶ Not all are hydrogen atoms or all are alkyl groups, R ¹⁰ and R ¹¹ are aryl groups having 6 to 14 carbon atoms, and the aryl groups are linear, branched or cyclic having 1 to 6 carbon atoms. And an alkyl group having 1 to 6 carbon atoms, a nitro group, a halogen atom, a cyano group, a trifluoromethyl group, or a carbonyl group, R ¹⁵ and R ¹⁶ may be a straight chain having 1 to 6 carbon atoms. A chain or branched alkyl group in which R ¹⁵ and R ¹⁶ are bonded to each other and bonded to each other And a nitrogen atom, and may have a benzene ring, a naphthalene ring, a double bond, or an ether bond in the ring, and R ¹⁹ and R ²⁰ are a hydrogen atom, a carbon number of 1 to 8 is a linear, branched or cyclic alkyl group, or an aryl group optionally having the same substituent as R ⁴ , R ⁵ and R ⁶ having 6 to 14 carbon atoms , R ¹⁹ , R ^At least one or both of ²⁰ are aryl groups, or R ¹⁹ and R ²⁰ may be bonded to form a ring together with the carbon atoms to which they are bonded, 0 ≦ a1 <1.0, 0 ≦ a2 <1.0, 0 ≦ a3 <1.0, 0 ≦ a4 <1.0, 0 <a1 + a2 + a3 + a4 <1.0. )
Claim 2:
The sum of the total number of moles of amino groups in the quencher and the total number of moles of amino groups generated from the photobase generator is larger than the total number of moles of acids generated from the photoacid generator. Item 4. The pattern forming method according to Item 1.
Claim 3 :
3. The pattern forming method according to claim 1, wherein the photoacid generator generates sulfonic acid, imidic acid, or methide acid whose α-position is fluorinated by light irradiation.
Claim 4 :
4. The pattern forming method according to claim 3 , wherein the photoacid generator is a sulfonium salt or iodonium salt acid generator.
Claim 5 :
A line-and-space pattern of a pair of the mask, single exposure, PEB, resolution doubling of any one of claims 1 to 4, characterized in that the separately formed on two pairs of line and space by developing Pattern forming method.
Claim 6 :
One line pattern on the mask, single exposure, PEB, one line and resolution of any one of claims 1 to 4, characterized in that the separately formed into two spaces by development Double pattern formation method.
Claim 7 :
A single space pattern on the mask, single exposure, PEB, one line and resolution of any one of claims 1 to 4, characterized in that the separately formed into two spaces by development Double pattern formation method.
Claim 8 :
8. The pattern forming method for resolving power doubling according to any one of claims 1 to 7 , which is immersion lithography using an ArF excimer laser having an exposure wavelength of 193 nm as a light source and inserting water between the lens and the substrate. .

  By applying such a pattern forming method, it is possible to divide one line into two by one exposure and double the resolution.

  In the present invention, the amino group generated from the photobase generator, the amino group in the quencher, and the amino group generated from the thermal base generator include an imino group and other nitrogen atoms in addition to the original amino group. And a group that imparts basicity, that is, a nitrogen atom-containing basic group.

  According to the present invention, based on a polymer compound having an acid labile group and hardly soluble in an alkali developer, the total amount of amino groups from the quencher and the photobase generator group is the acid from the photoacid generator. When a resist material having a composition larger than the above-described amount is used, the unexposed portion and the overexposed portion are insoluble in an alkaline developer, and only a middle exposure portion can be dissolved in the developer. Thereby, the resolution can be doubled by dividing one line into two by one exposure and development. When a phase shift mask having a transmittance of 80% or more is used as a photomask pattern for performing this exposure, the sensitivity and resolution are improved.

It is sectional drawing explaining an example of the double patterning method of this invention, A is the state which formed the to-be-processed layer, the hard mask, and the resist film on the board | substrate, B is the state which exposed the resist film, C is resist The state where the film is developed, D is the state where the hard mask is etched, and E is the state where the layer to be processed is etched. It is sectional drawing explaining an example of the conventional double patterning method, A is the state which formed the to-be-processed layer, the hard mask, and the resist film on the board | substrate, B is the state which exposed and developed the resist film, C is The state where the hard mask is etched, D is the state where the first resist film is removed and the second resist film is formed, and then the resist film is exposed and developed, and E is the state where the layer to be processed is etched. . It is explanatory drawing which shows the relationship between the exposure amount of the conventional positive resist material, and the film thickness of a resist film. It is a cross-sectional shape of a contrast curve and a conventional positive resist pattern. It is explanatory drawing which shows the relationship between the exposure amount of the dual tone resist material of this invention, and the film thickness of a resist film. It is a cross-sectional shape of a contrast curve and the dual tone resist pattern of the present invention. This is a bright line mask pattern. It is a top view of the pattern after development at the time of using the mask of a bright line and the dual tone resist of this invention. It is a mask pattern of a dark trench. It is a top view of the pattern after image development at the time of using a dark trench mask and the dual tone resist of this invention. Exposure width 193nm, NA1.35, σ0.9 20 degree dipole illumination, s-polarized illumination, wafer width dimension of 88nm pitch, shifter angle 180 degree, 5% transmittance halftone phase shift mask line width (shifter The optical contrast when the (width) is changed is shown. Exposure wavelength 193nm, NA1.35, σ0.9 20 ° dipole illumination, s-polarized illumination, mask with wafer pitch of 88nm, shifter angle 180 °, engraving width (trench width) of engraved chromeless phase shift mask The optical contrast when changed is shown. Exposure contrast 193nm, NA1.35, σ0.9 20 degree dipole illumination, s-polarized illumination, optical contrast when changing the shifter angle of chromeless phase shift mask with mask on wafer with pitch 88nm and line width 40nm Show. Exposure wavelength 193nm, NA1.35, σ0.9 20 ° dipole illumination, s-polarized illumination, mask with pitch of 88nm on wafer, halftone phase shift mask shifter 180 ° with line width 44nm and 5% transmittance, trench The optical image at the time of the shifter 180 degree | times of the chromeless phase shift mask of width 40nm is shown. It is a film thickness change curve which shows the relationship between the film thickness of the resist film of the resist 1 which concerns on the Example of this invention, and exposure amount.

The inventors of the present invention have intensively studied a resist material having a resolution doubled to obtain a half pitch pattern by one exposure and development and a patterning method using the resist material. For the resolution doubling, it is necessary to have two threshold values. That is, the resist material exhibits the characteristics of a positive resist material at a certain exposure dose, and exhibits the characteristics of a negative resist material at an exposure dose different from this. In the above-mentioned Non-Patent Document 3, a crosslinking agent is added to a hydroxystyrene-based KrF resist material substituted with an acid labile group, and the reactivity of the catalyst for the deprotection reaction of the acid labile group and the crosslinking reaction by the crosslinking agent is described. By changing the above, the characteristics of the positive resist material due to the deprotection reaction are obtained on the low exposure amount side, and the characteristics of the negative resist material due to the crosslinking reaction are obtained on the high exposure amount side. A positive resist material that uses a highly reactive acid labile group with low activation energy for deprotection reaction, and uses only an acid generator that generates weak acid with high generation efficiency, and performs only deprotection reaction on the low exposure side. The characteristics of By using a cross-linking agent that crosslinks with a strong acid and having a high activation energy for the cross-linking reaction, the negative resist composition is characterized by cross-linking with a strong acid generated from an acid generator with low acid generation efficiency. It is possible to produce a difference in exposure amount by shifting the timing of the negative-type characteristics. If it is a hydroxystyrene type KrF resist material, it can be made into a positive resist material by substituting with an acid labile group, and it can be made into a negative resist material by adding a crosslinking agent. By adding a cross-linking agent to the group-substituted polyhydroxystyrene, both positive and negative properties can easily be produced.
On the other hand, since ArF resist material uses lactone as an adhesive group, it does not crosslink even when a crosslinking agent is added. Therefore, the addition of a crosslinking agent as in the case of a KrF resist material can improve the material characteristics of a negative resist. Can't get.

  The present inventors have considered that the negative resist characteristics are not obtained by adding the cross-linking agent, but the positive resist characteristics are not exhibited by the acid inactivation. Both the photoacid generator and the photobase generator are present in the resist material, and the photoacid generator has a higher generation efficiency than the photobase generator. When the exposure amount is increased, acid is first generated, deprotection reaction proceeds in PEB, and positive formation occurs. As the exposure is increased, acid generation due to decomposition of the acid generator converges, and the acid is deactivated when the sum of the base generated from the base generator and the base of the quencher exceeds the amount of acid. Occurs, and the deprotection reaction in PEB is inhibited, resulting in negative conversion.

Examples of the photobase generator include those having any partial structure of (i) carbamate type, (ii) imidocarbamate type, and (iii) oxime ester type, which can be shown below.

  An excess of base is present at the exposure dose at which acid inactivation occurs. The place where the deprotection reaction proceeds in PEB and dissolves after development contains an excess of acid, but the acid is removed by evaporation and reattachment of the base from the place where the base is excessive in such a place. Is insolubilized, it should be dissolved in the developer. In order to prevent evaporation and reattachment of the basic substance, a form in which an amino group generated by light is bonded to the polymer main chain is preferable. Furthermore, it is preferable that the repeating unit by the photobase generator is copolymerized with a repeating unit having an acid labile group in the polymer compound serving as the base polymer of the resist material. For example, a homopolymer of a repeating unit by a photobase generator and a base polymer of a resist material having a repeating unit having an acid labile group can be blended. In this case, the polymers may cause phase separation. Since the place where the inactivation occurs is separated from the place where the inactivation does not occur, there is a possibility that the edge roughness of the resist pattern after development increases, or a defect such as a bridge defect or a line defect occurs. In order to uniformly disperse the photobase generator in the base polymer of the resist material, it is preferable to incorporate the photobase generator as a copolymer in the polymer compound of the base polymer.

  Therefore, in the present invention, as the photobase generator, a repeating unit containing any one of the above formulas (i) to (iii) as a photobase generator group is bonded to the main chain of the polymer compound of the base polymer. It is preferable to use as an aspect.

Here, as the repeating unit having a photobase generator group to be copolymerized in a polymer compound serving as a base polymer of the resist material, those represented by repeating units a1 to a4 in the following general formula (1) are preferable.

(In the formula, R ¹ , R ⁷ , R ¹² and R ¹⁷ are hydrogen atoms or methyl groups. R ² , R ⁸ , R ¹³ and R ¹⁸ are single bonds, methylene groups, ethylene groups, phenylene groups, phenylmethylenes. Group, phenylethylene group, phenylpropylene group, or —C (═O) —O—R ²¹ —, wherein R ²¹ is a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms, or 6 carbon atoms. Is an arylene group having 1 to 10 carbon atoms, or an alkenylene group having 2 to 12 carbon atoms, and R ³ , R ⁹ and R ¹⁴ are a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or carbon Although an aryl group having 6 to 10, the R ²¹ combine with together with the nitrogen atom to which they are attached, preferably 3 to 8 carbon atoms, optionally .R ⁴ be formed, especially 4 to 6 ring, R ^5, R ⁶ is a hydrogen atom, a straight, branched or cyclic alkyl group Or an aryl group having 6 to 14 carbon atoms, and the aryl group is a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a halogen atom, a cyano group, Or may contain a trifluoromethyl group, preferably R ⁴ and R ⁵ , R ⁵ and R ⁶ , or R ⁴ and R ^6, and together with the carbon atom to which these are bonded, preferably 3 to 10 carbon atoms, In particular, a non-aromatic ring having 4 to 8 may be formed, but all of R ⁴ , R ⁵ , and R ⁶ are not hydrogen atoms or all are alkyl groups, and R ¹⁰ and R ¹¹ have 6 carbon atoms. -14, preferably 6-10 aryl groups, the aryl groups being linear, branched or cyclic alkyl groups having 1 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, nitro groups, halogen atoms, It may contain a cyano group, a trifluoromethyl group, or a carbonyl group. ¹⁵ and R ¹⁶ are linear or branched alkyl groups having 1 to 6 carbon atoms. R ¹⁵ and R ¹⁶ are bonded to each other, and together with the carbon atom and nitrogen atom to which they are bonded, 4 to 12 carbon atoms, particularly 4 May have a benzene ring, a naphthalene ring, a double bond, or an ether bond, and R ¹⁹ and R ²⁰ may be a hydrogen atom or a carbon number of 1 to 8. , Preferably a linear, branched or cyclic alkyl group having 1 to 6 or a substituent similar to R ⁴ , R ⁵ and R ⁶ having 6 to 14 carbon atoms, preferably 6 to 10 carbon atoms. R ¹⁹ and R ²⁰ are at least one or both are aryl groups, or R ¹⁹ and R ²⁰ are bonded to each other, and together with the carbon atom to which they are bonded, 4 to 10 carbon atoms, particularly 4 -8 non-aromatic rings may be formed. 0 ≦ a1 <1.0, 0 ≦ a2 <1.0, 0 ≦ a3 <1.0, 0 ≦ a4 <1.0, 0 <a1 + a2 + a3 + a4 <1.0, preferably 0 ≦ a1 ≦ 0.5 0 ≦ a2 ≦ 0.5, 0 ≦ a3 ≦ 0.5, 0 ≦ a4 ≦ 0.5, 0.01 ≦ a1 + a2 + a3 + a4 ≦ 0.5, more preferably 0 ≦ a1 ≦ 0.3, 0 ≦ a2 ≦ 0.3, 0 ≦ a3 ≦ 0.3, 0 ≦ a4 ≦ 0.3, 0.015 ≦ a1 + a2 + a3 + a4 ≦ 0.3. )

  In the general formula (1), the benzylcarbamate type base generator represented by the repeating unit a1 is the decomposition mechanism represented by the following reaction formula (1) -a1, and the benzoin carbamate type base generator represented by the repeating unit a2 is represented by the following reaction formula. (1) The decomposition mechanism represented by -a2 and the imidocarbamate type base generator represented by the repeating unit a3 are the decomposition mechanism represented by the following reaction formula (1) -a3 and the oxime ester type base generator represented by the repeating unit a4. Generates an amine by the decomposition mechanism represented by the following reaction formula (1) -a4. Carbon dioxide, secondary or primary amine compounds, and other compounds are generated by the decomposition.

(In the formula, R ^{1 to} R ⁹ and R ^{12 to} R ²⁰ are as described above, and R and R ′ are substituents of the aryl group described in R ¹⁰ and R ^11. )
In the repeating units a1, a2, and a3, a nitrogen atom is bonded to the main chain. In the repeating unit a4, an amino group bonded to the main chain is generated by a transfer reaction during decomposition.

Specific examples of the base generator represented by the repeating unit a1 in the general formula (1) are shown below. Here, R ^{4 to} R ⁶ are as described above.

In the general formula (1), R ^{4 to} R ⁶ of the base generator represented by the repeating unit a1 can be exemplified below. Here, R ^{1 to} R ³ are as described above.

As the repeating unit a1, a repeating unit of a combination of R ^{1 to} R ³ and R ^{4 to} R ⁶ exemplified above can be selected.

  Specific examples of the base generator represented by the repeating unit a2 in the general formula (1) are shown below.

(In the above formula, T is
Indicates. A broken line is a bond. R ¹⁰ and R ¹¹ are as described above. )

(In the above formula, T is
Indicates. A broken line is a bond. R ¹⁰ and R ¹¹ are as described above. )

In the general formula (1), R ¹⁰ and R ¹¹ of the base generator represented by the repeating unit a2 can be exemplified as follows. Here, R ^{7 to} R ⁹ are as described above.

As the repeating unit a2, a repeating unit of a combination of R ^{7 to} R ⁹ and R ¹⁰ and R ¹¹ exemplified above can be selected.

  In the general formula (1), the base generator represented by the repeating unit a3 is specifically exemplified below.

(In the above formula, S is
Indicates. A broken line is a bond. R ¹⁵ and R ¹⁶ are as described above. )

(In the above formula, S is
Indicates. A broken line is a bond. R ¹⁵ and R ¹⁶ are as described above. )

In the general formula (1), R ¹⁵ and R ¹⁶ of the base generator represented by the repeating unit a3 can be exemplified as follows. Here, R ^{12 to} R ¹⁴ are as described above.

As the repeating unit a3, a repeating unit of a combination of R ^{12 to} R ¹⁴ and R ¹⁵ and R ¹⁶ exemplified above can be selected.

  Specific examples of the base generator represented by the repeating unit a4 in the general formula (1) are shown below.

As the base polymer of the resist material used in the pattern forming method of the present invention, those having a repeating unit b having an acid labile group are used, and those represented by the following general formula (AL) are particularly preferred. In this case, it is preferable to use the repeating units a1 to a4 having the base generator group represented by the general formula (1) described above together with the repeating unit b.

(Wherein R ⁰²⁴ is a hydrogen atom or a methyl group, and R ⁰²⁵ is an acid labile group.)

In the above general formula (AL), various acid labile groups represented by R ⁰²⁵ are selected, and in particular, groups represented by the following formulas (AL-10) and (AL-11), and the following formula (AL-12) And a cycloalkyl group having 4 to 20 carbon atoms.

In the formulas (AL-10) and (AL-11), R ⁰⁵¹ and R ⁰⁵⁴ are monovalent hydrocarbon groups such as a linear, branched or cyclic alkyl group having 1 to 40 carbon atoms, particularly 1 to 20 carbon atoms. Yes, it may contain heteroatoms such as oxygen, sulfur, nitrogen and fluorine. R ⁰⁵² and R ⁰⁵³ are a hydrogen atom or a monovalent hydrocarbon group such as a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and includes heteroatoms such as oxygen, sulfur, nitrogen and fluorine. Alternatively, a5 is an integer of 0 to 10, particularly 1 to 5. R ⁰⁵² and R ⁰⁵³ , R ⁰⁵² and R ⁰⁵⁴ , or R ⁰⁵³ and R ⁰⁵⁴ are each bonded and bonded to a carbon atom or a carbon atom and an oxygen atom, and a ring having 3 to 20 carbon atoms, particularly 4 to 16 carbon atoms, An alicyclic ring may be formed.
R ⁰⁵⁵ , R ⁰⁵⁶ , and R ⁰⁵⁷ are each a monovalent hydrocarbon group such as a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, and include heteroatoms such as oxygen, sulfur, nitrogen, and fluorine. But you can. Alternatively, R ⁰⁵⁵ and R ⁰⁵⁶ , R ⁰⁵⁵ and R ⁰⁵⁷ , or R ⁰⁵⁶ and R ⁰⁵⁷ are bonded to form a ring having 3 to 20 carbon atoms, particularly 4 to 16 carbon atoms, particularly an alicyclic ring, together with the carbon atom to which they are bonded. May be.

  Specific examples of the compound represented by the formula (AL-10) include tert-butoxycarbonyl group, tert-butoxycarbonylmethyl group, tert-amyloxycarbonyl group, tert-amyloxycarbonylmethyl group, 1-ethoxyethoxycarbonyl. Examples include a methyl group, 2-tetrahydropyranyloxycarbonylmethyl group, 2-tetrahydrofuranyloxycarbonylmethyl group and the like, and substituents represented by the following general formulas (AL-10) -1 to (AL-10) -10. .

In the formulas (AL-10) -1 to (AL-10) -10, R ⁰⁵⁸ is the same or different linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, aryl having 6 to 20 carbon atoms. Group or a C7-20 aralkyl group is shown. R ⁰⁵⁹ represents a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms. R ⁰⁶⁰ represents an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms. a5 is as described above.

  Examples of the acetal compound represented by the formula (AL-11) are (AL-11) -1 to (AL-11) -34.

  In addition, examples of the acid labile group include a group represented by the general formula (AL-11a) or (AL-11b), and the base resin may be intermolecularly or intramolecularly crosslinked by the acid labile group. .

In the above formula, R ⁰⁶¹ and R ⁰⁶² represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms. Alternatively, R ⁰⁶¹ and R ⁰⁶² may be bonded to form a ring together with the carbon atom to which they are bonded. In the case of forming a ring, R ⁰⁶¹ and R ⁰⁶² are linear or branched having 1 to 8 carbon atoms. -Like alkylene group. R ⁰⁶³ is a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms, b5 and d5 are 0 or 1 to 10, preferably 0 or an integer of 1 to 5, and c5 is an integer of 1 to 7. . A represents a (c5 + 1) -valent aliphatic or alicyclic saturated hydrocarbon group, aromatic hydrocarbon group or heterocyclic group having 1 to 50 carbon atoms, and these groups are heteroatoms such as O, S, and N. Or a part of hydrogen atoms bonded to the carbon atom may be substituted with a hydroxyl group, a carboxyl group, a carbonyl group or a fluorine atom. B represents —CO—O—, —NHCO—O— or —NHCONH—.

  In this case, A is preferably a divalent to tetravalent C1-C20 linear, branched or cyclic alkylene group, alkanetriyl group, alkanetetrayl group, or C6-C30 arylene group. These groups may have intervening heteroatoms such as O, S, N, etc., and a part of the hydrogen atoms bonded to the carbon atoms are substituted by a hydroxyl group, a carboxyl group, an acyl group or a halogen atom. Also good. C5 is preferably an integer of 1 to 3.

  Specific examples of the crosslinked acetal groups represented by the general formulas (AL-11a) and (AL-11b) include those represented by the following formulas (AL-11) -35 to (AL-11) -42.

  Next, examples of the tertiary alkyl group represented by the formula (AL-12) include tert-butyl group, triethylcarbyl group, 1-ethylnorbornyl group, 1-methylcyclohexyl group, 1-ethylcyclopentyl group, tert Examples thereof include an amyl group and the like, or groups represented by the following general formulas (AL-12) -1 to (AL-12) -16.

In the above formula, R ⁰⁶⁴ represents the same or different linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group having 7 to 20 carbon atoms. R ⁰⁶⁵ and R ^{067 each} represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms. R ⁰⁶⁶ represents an aryl group having 6 to 20 carbon atoms or an aralkyl group having 7 to 20 carbon atoms.

Furthermore, examples of the acid labile group include groups represented by the following formulas (AL-12) -17 and (AL-12) -18, and the acid containing R ⁰⁶⁸ which is a divalent or higher valent alkylene group or an arylene group. The base resin may be intramolecularly or intermolecularly cross-linked by an unstable group. In the formulas (AL-12) -17 and (AL-12) -18, R ⁰⁶⁴ represents the same as described above, and R ⁰⁶⁸ represents a linear, branched or cyclic alkylene group having 1 to 20 carbon atoms, or an arylene group. And may contain a hetero atom such as an oxygen atom, a sulfur atom or a nitrogen atom. b6 is an integer of 1 to 3.

Note that R ⁰⁶⁴ , R ⁰⁶⁵ , R ⁰⁶⁶ , and R ⁰⁶⁷ described above may have a heteroatom such as oxygen, nitrogen, sulfur, and the like. Specifically, the following formulas (AL-13) -1 to (AL- 13) -7.

  In particular, as the acid labile group of the above formula (AL-12), those having an exo structure represented by the following formula (AL-12) -19 are preferable.

(Wherein R ⁰⁶⁹ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an optionally substituted aryl group having 6 to 20 carbon atoms. R ^{070 to} R ⁰⁷⁵ and R ^078. , R ⁰⁷⁹ is each independently a monovalent hydrocarbon group such as an alkyl group that may contain a hydrogen atom or a hetero atom number of 1 to 15 carbon atoms, R ^076, R ⁰⁷⁷ represents a hydrogen atom. Alternatively, R ⁰⁷⁰ And R ⁰⁷¹ , R ⁰⁷² and R ⁰⁷⁴ , R ⁰⁷² and R ⁰⁷⁵ , R ⁰⁷³ and R ⁰⁷⁵ , R ⁰⁷³ and R ⁰⁷⁹ , R ⁰⁷⁴ and R ⁰⁷⁸ , R ⁰⁷⁶ and R ⁰⁷⁷ , or R ⁰⁷⁷ and R ⁰⁷⁸ are bonded to each other. May form a ring (particularly an alicyclic ring) together with the carbon atom to which they are bonded, and in this case, those involved in the formation of the ring are alkylene groups that may contain a heteroatom having 1 to 15 carbon atoms, etc. represents a divalent hydrocarbon group. the R ⁰⁷⁰ and R ^079, R ⁰⁷⁶ and R ^079, or R ⁰⁷² and R ⁰⁷⁴ is adjacent charcoal Nothing binds not through with each other those that bind to, may form a double bond. The formula also represents enantiomer.)

Here, the following repeating unit having an exo-body structure represented by the general formula (AL-12) -19

JP-A-2000-327633 discloses an ester monomer for obtaining the above. Specific examples include the following, but are not limited thereto. R ⁰¹¹¹ and R ⁰¹¹² each independently represent a hydrogen atom, a methyl group, —COOCH ₃ , —CH ₂ COOCH ₃ or the like.

  Furthermore, examples of the acid labile group of the above formula (AL-12) include an acid labile group having frangiyl, tetrahydrofurandiyl or oxanorbornanediyl represented by the following formula (AL-12) -20.

(Wherein R ⁰⁸⁰ and R ⁰⁸¹ each independently represent a monovalent hydrocarbon group such as a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or R ⁰⁸⁰ and R ⁰⁸¹ are bonded to each other. Thus, an aliphatic hydrocarbon ring having 3 to 20 carbon atoms may be formed together with the carbon atom to which they are bonded, and R ⁰⁸² represents a divalent group selected from flangedyl, tetrahydrofurandiyl or oxanorbornanediyl. ⁰⁸³ represents a monovalent hydrocarbon group such as a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms which may contain a hydrogen atom or a hetero atom.)

Repeating units substituted with acid labile groups having frangyl, tetrahydrofurandiyl or oxanorbornanediyl

Examples of the monomer for obtaining the are as follows. R ⁰¹¹² is as described above. In the following formulae, Me represents a methyl group, and Ac represents an acetyl group.

The polymer compound serving as the base of the resist material used in the pattern forming method of the present invention is composed of repeating units a1 to a4 having a base generator group represented by the general formula (1) and an acid compound represented by the general formula (AL). Monomer having an adhesive group such as hydroxy group, cyano group, carbonyl group, ester group, ether group, lactone ring, carboxyl group, carboxylic anhydride group, etc. The repeating unit c derived from may be copolymerized.
Specific examples of the monomer for obtaining the repeating unit c include the following.

  In the repeating units a1, a2, a3, a4, b and c, the ratio of the repeating units is 0 ≦ a1 <1.0, 0 ≦ a2 <1.0, 0 ≦ a3 <1.0, 0 ≦ a4 <. 1.0, 0 <a1 + a2 + a3 + a4 <1.0, 0 <b ≦ 0.9, 0 ≦ c <0.9 (particularly 0 <c <0.9), preferably 0 ≦ a1 ≦ 0.5, 0 ≦ a2 ≦ 0.5, 0 ≦ a3 ≦ 0.5, 0 ≦ a4 ≦ 0.5, 0.01 ≦ a1 + a2 + a3 + a4 ≦ 0.5, 0.1 ≦ b ≦ 0.8, 0.1 ≦ c ≦ 0 .8, more preferably 0 ≦ a1 ≦ 0.3, 0 ≦ a2 ≦ 0.3, 0 ≦ a3 ≦ 0.3, 0 ≦ a4 ≦ 0.3, 0.015 ≦ a1 + a2 + a3 + a4 ≦ 0.3, 0 .15 ≦ b ≦ 0.7 and 0.15 ≦ c ≦ 0.7.

  As the repeating unit other than the above a1, a2, a3, a4, b, and c, (meth) acrylate having a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, alkenyl having 2 to 20 carbon atoms (Meth) acrylate having a group, (meth) acrylate having an aryl group having 6 to 20 carbon atoms, styrene, styrene substituted with an alkyl group, styrene substituted with an alkoxy group, styrene substituted with an acetoxy group, vinyl Mention may be made of the repeating unit d derived from monomers such as naphthalene, vinylcarbazole, acenaphthylene, indene, vinylpyridine, vinylanthracene and vinylpyrrolidone. The ratio of d is 0 ≦ d ≦ 0.3, preferably 0 ≦ d ≦ 0.2.

Furthermore, any of the repeating units e1, e2, and e3 having a sulfonium salt represented by the following general formula (10) can be copolymerized.

(In the above formula, R ¹²⁰ , R ¹²⁴ and R ¹²⁸ are a hydrogen atom or a methyl group, R ¹²¹ is a single bond, a phenylene group, —O—R—, or —C (═O) —Y—R—. Y is an oxygen atom or NH, R is a linear, branched or cyclic alkylene group having 1 to 6 carbon atoms, a phenylene group or an alkenylene group having 3 to 10 carbon atoms, a carbonyl group (—CO—), an ester It may contain a group (—COO—), an ether group (—O—) or a hydroxy group, and R ¹²² , R ¹²³ , R ¹²⁵ , R ¹²⁶ , R ¹²⁷ , R ¹²⁹ , R ¹³⁰ , R ¹³¹ may be the same or It is a different type of linear, branched or cyclic alkyl group having 1 to 12 carbon atoms and may contain a carbonyl group, an ester group or an ether group, or an aryl group having 6 to 12 carbon atoms, or 7 carbon atoms. Represents an aralkyl group or a thiophenyl group of ˜20, Z is a single bond, a methylene group, Styrene group, a phenylene group, a fluorinated phenylene group, -O-R ¹³² -, or _{-C (= O) -Z 1 -R} 132 - a is .Z ₁ is an oxygen atom or NH, R ¹³² is the number of carbon atoms 1 to 6 linear, branched or cyclic alkylene group, phenylene group or alkenylene group, which may contain a carbonyl group, an ester group, an ether group or a hydroxy group, and M ⁻ represents a non-nucleophilic counter group. E1 represents 0 ≦ e1 ≦ 0.3, e2 represents 0 ≦ e2 ≦ 0.3, e3 represents 0 ≦ e3 ≦ 0.3, and 0 <e1 + e2 + e3 ≦ 0.3.

Non-nucleophilic counter ions of M ⁻ include halide ions such as chloride ions and bromide ions, triflate, fluoroalkyl sulfonates such as 1,1,1-trifluoroethanesulfonate, nonafluorobutanesulfonate, tosylate, and benzene. Sulfonate, 4-fluorobenzene sulfonate, aryl sulfonate such as 1,2,3,4,5-pentafluorobenzene sulfonate, alkyl sulfonate such as mesylate and butane sulfonate, bis (trifluoromethylsulfonyl) imide, bis (perfluoroethyl) Mention acid such as imide) such as sulfonyl) imide, bis (perfluorobutylsulfonyl) imide, tris (trifluoromethylsulfonyl) methide, tris (perfluoroethylsulfonyl) methide It can be.

Furthermore, the sulfonate by which the alpha position shown by the following general formula (K-1) was fluoro-substituted, and the sulfonate by which the alpha and beta positions shown by the following general formula (K-2) were fluoro-substituted were mentioned.

In General Formula (K-1), ^R102 represents a hydrogen atom, a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, or an aryl having 6 to 20 carbon atoms. Group, which may have an ether group, an ester group, a carbonyl group, a lactone ring, or a fluorine atom.
In general formula (K-2), ^R103 is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 30 carbon atoms, an acyl group, an alkenyl group having 2 to 20 carbon atoms, or 6 to 20 carbon atoms. An aryl group or an aryloxy group, which may have an ether group, an ester group, a carbonyl group, or a lactone ring.

  The ratio of the repeating units e1, e2, e3 is 0 ≦ e1 + e2 + e3 ≦ 0.3. However, when the repeating unit is introduced, it is preferable that 0.01 ≦ e1 + e2 + e3 ≦ 0.25. When the resist material according to the present invention does not contain an acid generator, 0.02 ≦ e1 + e2 + e3 ≦ 0.20 is preferable, and 0.03 ≦ e1 + e2 + e3 ≦ 0.18 is more preferable.

Here, a1 + a2 + a3 + a4 + b + c + d + e1 + e2 + e3 = 1.
For example, a + b = 1 indicates that in the polymer compound containing the repeating units a and b, the total amount of the repeating units a and b is 100 mol% with respect to the total amount of all the repeating units, and a + b <1 Indicates that the total amount of the repeating units a and b is less than 100 mol% with respect to the total amount of all the repeating units, and has other repeating units c and the like in addition to a and b.

  The polymer compound serving as the resist base resin used in the pattern forming method of the present invention has a weight average molecular weight in terms of polystyrene by gel permeation chromatography (GPC) of 1,000 to 500,000, particularly 2,000 to 30, 000 is preferred. If the weight average molecular weight is too small, the crosslinking efficiency in the thermal crosslinking after development of the resist material is lowered. If it is too large, the alkali solubility is lowered, and the trailing phenomenon may easily occur after pattern formation.

Furthermore, in the high molecular compound used as the base resin of the resist material used in the pattern forming method of the present invention, when the molecular weight distribution (Mw / Mn) is wide, a low molecular weight or high molecular weight polymer exists, so that after exposure, There is a possibility that foreign matter is seen on the pattern or the shape of the pattern is deteriorated. Therefore, since the influence of such molecular weight and molecular weight distribution tends to increase as the pattern rule becomes finer, in order to obtain a resist material suitably used for fine pattern dimensions, the multi-component copolymer to be used is obtained. The molecular weight distribution is preferably from 1.0 to 2.0, particularly preferably from 1.0 to 1.5 and narrow dispersion.
It is also possible to blend two or more polymers having different composition ratios, molecular weight distributions, and molecular weights.

  In order to synthesize these polymer compounds, as one method, a monomer having an unsaturated bond for obtaining repeating units a1, a2, a3, a4, b, c, d, e1, e2, e3 in an organic solvent is used. There is a method in which a radical initiator is added to carry out heat polymerization, whereby a polymer compound can be obtained. Examples of the organic solvent used at the time of polymerization include toluene, benzene, tetrahydrofuran, diethyl ether, dioxane and the like. As polymerization initiators, 2,2′-azobisisobutyronitrile (AIBN), 2,2′-azobis (2,4-dimethylvaleronitrile), dimethyl 2,2-azobis (2-methylpropionate) ), Benzoyl peroxide, lauroyl peroxide and the like, and preferably polymerized by heating to 50 to 80 ° C. The reaction time is 2 to 100 hours, preferably 5 to 20 hours. As the acid labile group, those introduced into the monomer may be used as they are, or the acid labile group may be once removed by an acid catalyst and then protected or partially protected.

  In the present invention, the photobase generator can be used by introducing it into the polymer compound of the base polymer as a repeating unit containing a photobase generator group, but the photobase generator group is introduced into the polymer compound. In addition to the polymer compound into which the photobase generator group is introduced, a compound containing any partial structure of the above formulas (i) to (iii) is added to the resist material as a photobase generator. Can also be used. Specifically, additive type photobase generators represented by the following general formulas (2) to (9) can be blended.

(In the formula, R ²¹ , R ²² , R ²³ , R ²⁶ , R ²⁷ , R ²⁸ , R ³² , R ³³ , R ³⁴ , R ³⁵ , R ³⁶ , R ³⁷ , R ⁴⁰ , R ⁴¹ , R ⁴² , R ⁴⁶ , R ⁴⁷ , and R ⁴⁸ are a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 14 carbon atoms, and the aryl group is a straight chain having 1 to 6 carbon atoms. A chain, branched or cyclic alkyl group or alkoxy group, a nitro group, a halogen atom, a cyano group, or a trifluoromethyl group may be included, but R ^{21 to} R ²³ , R ^{26 to} R ²⁸ , R ³² may be included. to R ^34, at least one aryl group of ^{R 35 ~R 37, R 40 ~R} 42, R 46 ~R 48, at least one of hydrogen atom, or R ²¹ to R ²³ and R ²⁶ to R ²⁸ and R ^{32 to} R ³⁴ and R ^{35 to} R ³⁷ and R ^{40 to} R ⁴² and R ^{46 to} R ⁴⁸ are bonded together and bonded to the carbon atom to which they are bonded. Preferably, it may form a non-aromatic ring having 3 to 10 carbon atoms, particularly 4 to 8. R ²⁴ , R ²⁵ , R ²⁹ , R ³¹ , R ³⁸ , R ³⁹ , R ⁴³ , R ⁴⁵ , R ⁵¹ , R ⁵² , R ⁵⁵ and R ⁵⁷ are a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms, a double bond, an ether group, an amino group, a carbonyl group, a hydroxy group, Or R ²⁴ and R ²⁵ , R ²⁹ and R ³¹ , R ²⁹ and R ³⁰ , R ³¹ and R ³⁰ , R ³⁸ and R ³⁹ , R ⁴³ and R ⁴⁴ , R ⁴⁴ R ⁴⁵ , R ⁴³ and R ⁴⁵ , R ⁵¹ and R ⁵² , R ⁵⁵ and R ⁵⁶ , R ⁵⁵ and R ⁵⁷ , R ⁵⁶ and R ⁵⁷ are bonded to each other, and together with the nitrogen atom to which these are bonded, preferably 3 to 3 carbon atoms And may form a non-aromatic ring of 10, particularly 4 to 8. R ³⁰ , R ⁴⁴ and R ⁵⁶ are each a single bond, a linear, branched or cyclic alkylene group having 1 to 20 carbon atoms, an alkyne group, Carbon number -20 arylene group, C2-C12 alkenylene group, or C2-C12 alkynylene group, these groups are double bonds, ether groups, amino groups, carbonyl groups, hydroxy groups, or ester groups. R ⁴⁹ , R ⁵⁰ , R ⁵³ , R ⁵⁴ , R ⁵⁸ , and R ⁵⁹ are linear or branched alkyl groups having 1 to 6 carbon atoms, and R ⁴⁹ , R ⁵⁰ , R ⁵³ And R ⁵⁴ , R ⁵⁸ and R ⁵⁹ may combine to form a ring having preferably 3 to 10 carbon atoms, particularly 4 to 8 carbon atoms together with the carbon atom to which they are bonded and the nitrogen atom to which the carbon atom is bonded. The ring may have a benzene ring, a naphthalene ring, a double bond, or an ether bond. R ⁶⁰ is a linear, branched or cyclic alkyl group having 1 to 16 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an alkenyl group having 2 to 20 carbon atoms, and R ⁶¹ is 6 to 20 carbon atoms. R ⁶² is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 16 carbon atoms, or an aryl group having 6 to 20 carbon atoms. R ⁶³ , R ⁶⁴ and R ⁶⁵ are a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 14 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or alkoxycarbonyl. Or a cyano group, wherein the alkyl group, aryl group or alkenyl group is a linear, branched or cyclic alkyl group or alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group, a nitro group, a halogen atom, or a cyano group. , A trifluoromethyl group, a sulfide group, an amino group, or an ether group. m, n, and r are 1 or 2. )

The photobase generator represented by the general formula (2) is specifically exemplified below. Here, R ²⁴ and R ²⁵ are as described above.

Specific examples of the base generator represented by the general formula (3) are shown below. Here, R ^{29 to} R ³¹ are as described above (hereinafter the same).

Examples of the base generator that generates the three-branched amine compound of the formula (3) are shown below.

Specific examples of the base generator represented by the general formula (4) are given below. Here, R ³⁸ and R ³⁹ are as described above (hereinafter the same).

Specific examples of the base generator represented by the general formula (5) are shown below. Here, R ^{43 to} R ⁴⁵ are as described above (hereinafter the same).

Examples of the base generator that generates the three-branched amine compound of the formula (4) are shown below.

Specific examples of the base generator represented by the general formula (6) are shown below. Here, R ⁵¹ and R ⁵² are as described above.

Specific examples of the base generator represented by the general formula (7) are shown below. Here, R ⁵⁵ to R ⁵⁷ are as defined above (hereinafter, the same).

Examples of the base generator that generates the three-branched amine compound of the formula (7) are shown below.

Specific examples of the base generator represented by the general formula (8) are shown below.

Specific examples of the base generator represented by the general formula (9) are shown below.

  In addition, the compounding quantity of the addition type base generator represented by the general formulas (2) to (9) is 0 to 10 parts by mass, particularly 0 to 8 parts by mass with respect to 100 parts by mass of the polymer compound as the base polymer. The range of parts by mass is preferable, and when blended, 0.2 parts by mass or more, particularly 0.5 parts by mass or more is preferable.

  In the pattern formation method of the present invention, as described above, it is important that the photobase generator has a lower generation efficiency than the photoacid generator. When a sulfonium salt or iodonium salt is used as the photoacid generator, the base generators represented by the general formulas (1) to (9) can be suitably used because of low generation efficiency. However, for example, when N-sulfonyloxyimide is used as the photoacid generator and the compounds shown in (6) and (7) are used as the photobase generator, since the generation efficiency is the same, positive and negative conversion occurs. Absent.

  In the pattern forming method of the present invention, a base proliferating agent that generates a base with a base in combination with a photobase generator can also be used. When a base proliferating agent is used in combination with a photobase generator, the relationship between the number of moles of amino groups is as follows. That is, the sum of the total number of moles of amino groups in the quencher, the total number of moles of amino groups generated from the photobase generator, and the total number of moles of amino groups generated from the base proliferator is calculated from the photoacid generator. It must be greater than the sum of the total number of moles of acid generated. The base proliferating agent may be bonded to the polymer main chain or may be an additive type.

In the case of bonding to the polymer main chain, in the repeating unit a1 of the general formula (1), one of R ⁴ , R ⁵ and R ⁶ is an alkenyl group, or a carbonyl group, an ester group, or a lactone ring , Carbonate group, maleimide group, amide group, or sulfo group.
Examples of the polymer main chain type base proliferating agent include the following. Such a main chain type base proliferating agent can be copolymerized with a repeating unit having an acid labile group or an adhesive group. R ^{1 to} R ³ are as described above.

The additive type base proliferating agent is represented by the following formula (2 ′) or (3 ′).

(However, in the formula, R ²¹⁰ , R ²²⁰ , R ²³⁰ , R ²⁶⁰ , R ²⁷⁰ , R ²⁸⁰ , R ³²⁰ , R ³³⁰ , R ³⁴⁰ are hydrogen atoms, linear, branched or cyclic having 1 to 6 carbon atoms. An alkyl group having 6 to 14 carbon atoms, or an aralkyl group having 7 to 15 carbon atoms, but at least one of R ²¹⁰ , R ²²⁰ and R ²³⁰ , and at least one of R ²⁶⁰ , R ²⁷⁰ and R ²⁸⁰ . At least one of R ³²⁰ , R ³³⁰ and R ³⁴⁰ is an alkenyl group having 2 to 8 carbon atoms, or a carbonyl group, an ester group, a lactone ring, a carbonate group, a maleimide group, an amide group or a sulfo group. It is an organic group such as a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, an aryl group having 6 to 14 carbon atoms, an aralkyl group having 7 to 15 carbon atoms, etc. R ²⁴ , R ²⁵ , R ²⁹ , R ³⁰ , R ³¹ and m are as described above.)

Specifically, it can be exemplified below. R ²⁴ , R ²⁵ and R ^{29 to} R ³¹ are as described above.

  The compounding amount of the base proliferating agent is 0.1 to 10 mol%, preferably 0.3 to 8 mol%, in a total amount of 100 mol% of repeating units when bonded to the main chain of the polymer compound. More preferably, it is 0.5-7 mol%. In the case of an addition type, it is 0.1-20 mass parts with respect to 100 mass parts of high molecular compounds (base resin), Preferably it is 0.3-15 mass parts, More preferably, it is 0.5-12 mass parts.

  The resist material according to the present invention contains a compound that generates an acid in response to actinic rays or radiation (photoacid generator). The component of the photoacid generator may be any compound that generates an acid upon irradiation with high energy rays. Suitable photoacid generators include sulfonium salts, iodonium salts, sulfonyldiazomethane, N-sulfonyloxyimide, oxime-O-sulfonate type acid generators, and the like. These can be used alone or in admixture of two or more.

  Specific examples of the photoacid generator are described in paragraphs [0122] to [0142] of JP-A-2008-111103. In the pattern forming method of the present invention, if the photoacid generator has a higher light generation efficiency than the photobase generator, it cannot be positive at an intermediate exposure amount. Accordingly, as the photoacid generator, those that generate sulfonic acid, imide acid, or methide acid fluorinated at the α-position are preferable, and sulfonium salts and iodonium salt-based photoacid generations with high acid generation efficiency. It is preferable to use an agent.

Specific examples of the photoacid generator include the following.
The sulfonium salt is a salt of a sulfonium cation and a sulfonate or bis (substituted alkylsulfonyl) imide or tris (substituted alkylsulfonyl) methide. As the sulfonium cation, triphenylsulfonium, (4-tert-butoxyphenyl) diphenylsulfonium, bis (4- tert-butoxyphenyl) phenylsulfonium, tris (4-tert-butoxyphenyl) sulfonium, (3-tert-butoxyphenyl) diphenylsulfonium, bis (3-tert-butoxyphenyl) phenylsulfonium, tris (3-tert-butoxyphenyl) ) Sulfonium, (3,4-ditert-butoxyphenyl) diphenylsulfonium, bis (3,4-ditert-butoxyphenyl) phenylsulfoni , Tris (3,4-ditert-butoxyphenyl) sulfonium, diphenyl (4-thiophenoxyphenyl) sulfonium, (4-tert-butoxycarbonylmethyloxyphenyl) diphenylsulfonium, tris (4-tert-butoxycarbonylmethyloxy) Phenyl) sulfonium, (4-tert-butoxyphenyl) bis (4-dimethylaminophenyl) sulfonium, tris (4-dimethylaminophenyl) sulfonium, 2-naphthyldiphenylsulfonium, dimethyl 2-naphthylsulfonium, 4-hydroxyphenyldimethylsulfonium 4-methoxyphenyldimethylsulfonium, trimethylsulfonium, 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonyl , Tribenzylsulfonium, diphenylmethylsulfonium, dimethylphenylsulfonium, 2-oxo-2-phenylethylthiacyclopentanium, 4-n-butoxynaphthyl-1-thiacyclopentanium, 2-n-butoxynaphthyl-1- Examples of the sulfonate include trifluoromethane sulfonate, pentafluoroethane sulfonate, nonafluorobutane sulfonate, dodecafluorohexane sulfonate, pentafluoroethyl perfluorocyclohexane sulfonate, heptadecafluorooctane sulfonate, 2,2, and the like. 2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenes Sulfonate, 1,1,3,3,3-pentafluoro-2- (4-phenylbenzoyloxy) propanesulfonate, 1,1,3,3,3-pentafluoro-2-pivaloyloxypropanesulfonate, 2 Cyclohexanecarbonyloxy-1,1,3,3,3-pentafluoropropane sulfonate, 1,1,3,3,3-pentafluoro-2-furoyloxypropane sulfonate, 2-naphthoyloxy-1,1 , 3,3,3-pentafluoropropanesulfonate, 2- (4-tert-butylbenzoyloxy) -1,1,3,3,3-pentafluoropropanesulfonate, 2-adamantanecarbonylcarbonyl-1,1, 3,3,3-pentafluoropropanesulfonate, 2-acetyloxy-1,1,3,3,3-pe Tafluoropropane sulfonate, 1,1,3,3,3-pentafluoro-2-hydroxypropane sulfonate, 1,1,3,3,3-pentafluoro-2-tosyloxypropane sulfonate, 1,1-difluoro- 2-naphthyl-ethanesulfonate, 1,1,2,2-tetrafluoro-2- (norbornan-2-yl) ethanesulfonate, 1,1,2,2-tetrafluoro-2- (tetracyclo [4.4. 0.12, 5.17,10] dodec-3-en-8-yl) ethanesulfonate, and the like. Examples of bis (substituted alkylsulfonyl) imide include bistrifluoromethylsulfonylimide, bispentafluoroethylsulfonylimide, bis Heptafluoropropylsulfonylimide, 1,3-propylenebissulfonylimide De, and examples of the tris (substituted alkylsulfonyl) methide include tris trifluoromethylsulfonyl methide, sulfonium salts and combinations thereof.

  Iodonium salt is a salt of iodonium cation and sulfonate or bis (substituted alkylsulfonyl) imide, tris (substituted alkylsulfonyl) methide, diphenyliodonium, bis (4-tert-butylphenyl) iodonium, 4-tert-butoxyphenylphenyliodonium. And aryliodonium cations such as 4-methoxyphenylphenyliodonium, and sulfonates similar to the above-mentioned sulfonium salts can be applied as sulfonates.

  The content of the photoacid generator is preferably in the range of 0.1 to 30 parts by mass, particularly 0.5 to 25 parts by mass with respect to 100 parts by mass of the polymer compound as the base resin.

  The resist material according to the present invention further contains an organic solvent and a basic compound (quencher). Furthermore, any one or more of a dissolution control agent, a surfactant, and acetylene alcohols can be contained.

  As specific examples of the organic solvent for the resist, the compounds described in paragraphs [0144] to [0145] of JP-A-2008-111103 can be used.

  That is, the organic solvent used here may be any organic solvent that can dissolve the base resin, the acid generator, and other additives. Examples of such organic solvents include ketones such as cyclohexanone and methyl-2-n-amyl ketone, 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy- Alcohols such as 2-propanol, propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, and other ethers, propylene glycol monomethyl ether acetate, propylene glycol mono Ethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, 3-ethoxy Examples thereof include esters such as ethyl propionate, tert-butyl acetate, tert-butyl propionate, propylene glycol mono tert-butyl ether acetate, and lactones such as γ-butyrolactone. Although it can be used in mixture, it is not limited to these. In the present invention, among these organic solvents, diethylene glycol dimethyl ether, 1-ethoxy-2-propanol, propylene glycol monomethyl ether acetate, and mixed solvents thereof, which have the highest solubility of the acid generator in the resist component, are preferably used. .

  The amount of the organic solvent used is preferably 200 to 8,000 parts by mass, particularly 400 to 6,000 parts by mass, with respect to 100 parts by mass of the polymer compound as the base resin.

As basic compounds that function as a quencher for resist, paragraphs [0146] to [0164] of JP-A-2008-111103, surfactants are paragraphs [0165] to [0166], and as a dissolution control agent, The materials described in paragraphs [0155] to [0178] and paragraphs [0179] to [0182] of Kaikai 2008-122932 can be used.
In this case, as the quencher, those having structures described in paragraphs [0152] to [0156] of the above publication are particularly preferable.

  More specifically, the quencher includes primary, secondary and tertiary aliphatic amines, hybrid amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, sulfonyl Nitrogen-containing compounds having a group, nitrogen-containing compounds having a hydroxyl group, nitrogen-containing compounds having a hydroxyphenyl group, alcoholic nitrogen-containing compounds, amides, imides, carbamates and the like.

Furthermore, the nitrogen-containing organic compound shown by the following general formula (B) -1 is illustrated.
N (X) _n (Y) _3-n (B) -1
(In the above formula, n is 1, 2 or 3. The side chains X may be the same or different and can be represented by the following general formula (X1), (X2) or (X3). Side chain Y Represents the same or different hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and may contain an ether group or a hydroxyl group, and Xs are bonded to form a ring. You may do it.)

In the general formulas (X1) to (X3), R ³⁰⁰ , R ³⁰² and R ³⁰⁵ are linear or branched alkylene groups having 1 to 4 carbon atoms, and R ³⁰¹ and R ³⁰⁴ are hydrogen atoms or carbon atoms. It is a linear, branched or cyclic alkyl group of 1 to 20, and may contain one or a plurality of hydroxy groups, ether groups, ester groups or lactone rings.
R ³⁰³ is a single bond or a linear or branched alkylene group having 1 to 4 carbon atoms, R ³⁰⁶ is a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and a hydroxy group , An ether group, an ester group, or a lactone ring may be contained.

Furthermore, the nitrogen-containing organic compound which has a cyclic structure shown by the following general formula (B) -2 is illustrated.

(In the above formula, X is as described above, and R ³⁰⁷ is a linear or branched alkylene group having 2 to 20 carbon atoms and contains one or more carbonyl groups, ether groups, ester groups, or sulfides. You may go out.)

Furthermore, the nitrogen-containing organic compound containing the cyano group represented by the following general formula (B) -3-(B) -6 is illustrated.

(In the above formula, X, R ³⁰⁷ and n are as described above, and R ³⁰⁸ and R ³⁰⁹ are the same or different linear or branched alkylene groups having 1 to 4 carbon atoms.)

Furthermore, a nitrogen-containing organic compound having an imidazole skeleton and a polar functional group represented by the following general formula (B) -7 is exemplified.

(In the above formula, R ³¹⁰ is an alkyl group having a linear, branched or cyclic polar functional group having 2 to 20 carbon atoms, and the polar functional group includes a hydroxyl group, a carbonyl group, an ester group, an ether group, a sulfide. 1 or a plurality of any of a group, a carbonate group, a cyano group and an acetal group, wherein R ³¹¹ , R ³¹² and R ³¹³ are a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms. An aryl group or an aralkyl group.)

Furthermore, a nitrogen-containing organic compound having a benzimidazole skeleton and a polar functional group represented by the following general formula (B) -8 is exemplified.

(In the above formula, R ³¹⁴ is a hydrogen atom, a linear, branched or cyclic alkyl group, aryl group, or aralkyl group having 1 to 10 carbon atoms. R ³¹⁵ is a straight chain having 1 to 20 carbon atoms. , An alkyl group having a branched or cyclic polar functional group, which includes at least one of an ester group, an acetal group, and a cyano group as a polar functional group, and in addition, a hydroxyl group, a carbonyl group, an ether group, a sulfide group, (One or more carbonate groups may be contained.)

Furthermore, the nitrogen-containing heterocyclic compound which has a polar functional group shown by the following general formula (B) -9 and (B) -10 is illustrated.

(In the above formula, A is a nitrogen atom or ≡C—R ^322. B is a nitrogen atom or ≡C—R ^323. R ³¹⁶ is a linear, branched or cyclic polarity having 2 to 20 carbon atoms. An alkyl group having a functional group, and the polar functional group includes one or more of a hydroxyl group, a carbonyl group, an ester group, an ether group, a sulfide group, a carbonate group, a cyano group, or an acetal group R ³¹⁷ , R ³¹⁸ , R ³¹⁹ R ³²⁰ is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or an aryl group, or R ³¹⁷ and R ³¹⁸ and R ³¹⁹ and R ³²⁰ are bonded to each other to form benzene. A ring, a naphthalene ring or a pyridine ring may be formed, and R ³²¹ is a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or an aryl group, and R ³²² and R ³²³ are Hydrogen atom, linear, branched or 1 to 10 carbon atoms Is a cyclic alkyl group or an aryl group, and R ³²¹ and R ³²³ may combine to form a benzene ring or a naphthalene ring.)

Furthermore, the nitrogen-containing organic compound which has an aromatic carboxylic acid ester structure shown by the following general formula (B) -11- (B) -14 is illustrated.

(In the above formula, R ³²⁴ is an aryl group having 6 to 20 carbon atoms or a heteroaromatic group having 4 to 20 carbon atoms, and part or all of the hydrogen atoms are halogen atoms, A linear, branched or cyclic alkyl group, an aryl group having 6 to 20 carbon atoms, an aralkyl group having 7 to 20 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an acyloxy group having 1 to 10 carbon atoms, or carbon R ³²⁵ is CO ₂ R ³²⁶ , OR ³²⁷ or cyano group R ³²⁶ is a carbon in which some methylene groups may be substituted with oxygen atoms R ³²⁷ is an alkyl group or acyl group having 1 to 10 carbon atoms in which a part of the methylene group may be substituted with an oxygen atom, R ³²⁸ is a single bond or a methylene group. , an ethylene group, a sulfur atom or -O (CH ₂ CH ₂ ) _N - is a .n = 0, 1, 2, 3 or 4 is a radical .R ³²⁹ is a hydrogen atom, a methyl group, .X an ethyl group or a phenyl group is a nitrogen atom or CR ³³⁰ .Y is A nitrogen atom or CR ^331. Z is a nitrogen atom or CR ^332. R ³³⁰ , R ³³¹ and R ³³² are each independently a hydrogen atom, a methyl group or a phenyl group, or R ³³⁰ and R ³³¹ or R ³³¹ and R ³³² may combine to form an aromatic ring having 6 to 20 carbon atoms or a heteroaromatic ring having 2 to 20 carbon atoms.

Furthermore, a nitrogen-containing organic compound having a 7-oxanorbornane-2-carboxylic acid ester structure represented by the following general formula (B) -15 is exemplified.

(In the above formula, R ³³³ is a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms. R ³³⁴ and R ³³⁵ are independently ether, carbonyl, ester, alcohol, C1-C20 alkyl group, C6-C20 aryl group, or C7-C20 carbon atom which may contain one or more polar functional groups such as sulfide, nitrile, amine, imine and amide An aralkyl group in which a part of hydrogen atoms may be substituted with a halogen atom, and R ³³⁴ and R ³³⁵ may be bonded to each other to form a heterocyclic ring or heteroaromatic ring having 2 to 20 carbon atoms; Good.)

  Furthermore, the compound which has a carbamate group of patent 3790649 can also be used as a quencher. The compound having a carbamate group does not have an amino group, but the carbamate group is decomposed by an acid to generate an amino group, and the function as a quencher is exhibited.

  In addition, the compounding quantity of a quencher (basic compound) is 0.01-15 mass parts with respect to 100 mass parts of said high molecular compounds as a base resin, Especially the range of 0.1-12 mass parts is preferable.

  When the amine growth mechanism that generates amine is used with the amine compound generated from the photobase generator group represented by the above formulas (1) to (9) as a catalyst, the generation efficiency of amine is increased and the generation of amine is exposed. There is an advantage that it can be made nonlinear with respect to the quantity. When the generation of amine becomes non-linear, the deactivation contrast is improved and the negative contrast can be improved.

  Here, as the resist material used in the pattern forming method of the present invention, the total number of moles of amino groups in the quencher and the total number of moles of amino groups generated from the photobase generator (the light of the polymer compound according to the present invention). The total number of moles of amino groups generated from the repeating unit having a base generator group and the total number of moles of amino groups generated from the addition type photobase generator) and the total number of moles of amino groups generated from the base proliferating agent The sum needs to be larger than the sum of the total number of moles of acid generated from the photoacid generator and the total number of moles of acid generated from the repeating unit having the sulfonium salt of the polymer compound. This inactivates the acid generated from the acid generator in the overexposed part.

  Preferably, the sum of the total number of moles of amino groups is preferably 20% or more than the total number of moles of acid, more preferably 40% or more, but when it exceeds 100%, the amount of amine compound generated is Since the amount of amino groups is always higher than the amount of acid generated, there may be no positive exposure area, that is, there is no exposure area that once dissolves in alkali when the exposure is increased. Need to optimize for quantity. From this point, it is preferably 100% or less, particularly 25 to 80%, particularly 30 to 70%.

When the total number of moles of amino groups in the quencher is greater than the total number of moles of acid generated from the acid generator, the acid generated from the acid generator is neutralized regardless of the amount of exposure. Deprotection reaction does not occur and no positive dissolution behavior is shown. Therefore, the total number of moles of amino groups in the quencher must be less than the total number of moles of acid generated from the acid generator. In addition, when a photobase generator and a base proliferator are used in combination, the total number of moles of amino groups is derived from the number of moles of amino groups in the quencher and the number of moles of amino groups generated from the photobase generator and the base proliferator. It is preferable that the sum of the number of moles of amino groups to be produced is 20% or more than the total number of moles of acid.
When only the base proliferating agent is used without using the photobase generating agent, the generation of amine does not increase as the exposure dose increases, and thus negativeization does not occur. Therefore, when using a base proliferating agent, it is necessary to use together with a photobase generator.

  When the total number of moles of amino groups increases, the sensitivity of positive formation in FIG. 5 decreases, and at the same time, the sensitivity of negative formation improves. If the total number of moles of amino groups is too large, the positive and negative sensitivities intersect and there is no region where the film thickness becomes zero. Moreover, when the addition amount of the quencher and the base generator is adjusted so that the value obtained by dividing the negative exposure amount by the positive exposure amount is in the range of 3 to 8, line division in the actual pattern is achieved. The

  Positive and negative sensitivity can also be adjusted by the PEB temperature. When the PEB temperature is high, positive sensitivity is increased, negative sensitivity is decreased, and the negative exposure amount divided by the positive exposure amount increases. On the contrary, if the PEB temperature is lowered, it is the reverse of the above, and if it is lowered too much, the sensitivity of positive and negative conversion intersects. Changing the PEB temperature not only changes the positive and negative sensitivities, but also changes the acid and amine diffusion distances. Increasing the PEB temperature more than necessary in order to increase the positive sensitivity and lower the negative sensitivity will increase the diffusion distance of acid and amine, which is preferable because it causes degradation of resolution. Absent. Rather than changing the PEB temperature to adjust the positive and negative sensitivity, it is preferable to adjust the positive and negative sensitivity by changing the amount of quencher and base generator added.

FIG. 3 shows a contrast curve of a conventional positive resist material. Here, the horizontal axis represents the exposure amount, and the vertical axis represents the film thickness. The exposure amount on the right side of the horizontal axis is larger, and the film thickness is higher on the upper side of the vertical axis. It is shown that the film thickness decreases from a certain threshold as the exposure amount is increased.
The pattern obtained in the optical image shown in the upper part of FIG. 4 using such a resist material is shown in the lower part of FIG.

  FIG. 5 shows the contrast curve of the dual tone resist material of the present invention. When the exposure amount is increased, dissolution proceeds and the film thickness becomes 0 as in a positive resist material. However, when the exposure amount is further increased, the film thickness increases as in a negative resist material. The pattern obtained in the optical image shown at the top of FIG. 6 using such a dual tone resist material is shown at the bottom of FIG. Compared to FIG. 4, the line width is halved, and double the number of patterns is formed at the same pitch.

  The photobase generator group used in the pattern forming method of the present invention is a photobase generator group in which an amino group is generated in the main chain by decomposition as shown in a1 to a4 in the general formula (1), or Dual tone characteristics can be obtained by the addition type photobase generator represented by the formulas (2) to (9). In the bake (PEB), the amine evaporates from the area where the amine is excessive, and reattaches to the area where the acid is excessive, forming a pattern of the area that would otherwise form a space pattern. Or the top of the space pattern forms a heel and becomes a head-up shape. A difference in shape or size between the dark pattern and the bright pattern may occur, and a dark bright (DB) difference due to so-called chemical flare may occur. In this case, in order not to cause a DB difference due to amine evaporation, a photobase generator that generates an amino group bonded to the main chain, a photobase generator that generates a high-boiling amine, or a resist upper layer is used. It is preferable to apply a protective film to.

As a phase shift mask having a transmittance of 80% or more used in the pattern forming method of the present invention, a chromeless phase shift mask in which a transparent film shifter is laminated on a quartz substrate is used. Usually, as a chromeless phase shift mask, a quartz substrate is engraved, a transparent film is laminated on the quartz substrate, and the transparent film is processed to form a shifter. A SiO ₂ film is most suitable as a transparent film formed on a quartz substrate.

The phase difference can be calculated by the following formula.
For example, the phase difference is 183 degrees under the conditions of a refractive index of quartz of 1.56 as a shifter, a shifter film thickness of 175 nm, and an exposure wavelength of 193 nm.

  In the case of vertically incident light, the phase difference of 180 degrees is the phase difference of the light emitted from the shifter, but the phase inversion does not occur unless the phase difference is increased as the incident angle becomes shallower. Accordingly, the phase difference is preferably 150 to 250 degrees, preferably 160 to 240 degrees, and more preferably 170 to 230 degrees. The optimum phase difference varies depending on the target dimensions, exposure apparatus illumination conditions, mask transmittance, and line dimensions, but it is 180 to in the case of a pattern with NA 1.35, wafer size of 88 nm pitch, and line size of 40 nm. It is about 190 degrees. In the case of a chromeless phase shift mask, the light intensity of the recessed portion in the cross-sectional shape of the mask becomes weak. In the case of the 6% halftone phase shift mask, the light intensity of the convex portion is weak in the shifter portion, that is, the cross-sectional shape, which is the reverse of the chromeless phase shift mask. The width of the recessed portion of the chromeless phase shift mask is suitably smaller than half the pitch. For example, when NA is 1.35, the wafer size is 88 nm pitch, and the phase difference is 180 degrees, the optimum groove size is 40 nm.

Here, double patterning will be described. FIG. 2 shows a conventional double patterning method.
In the double patterning method shown in FIG. 2, a resist film 30 is applied and formed on the work layer 20 on the substrate 10. In order to prevent the pattern collapse of the resist pattern, the thickness of the resist film has been reduced, and a method of processing a substrate to be processed using a hard mask has been performed in order to compensate for the accompanying decrease in etching resistance. Here, the double patterning method shown in FIG. 2 is a laminated film in which a hard mask 40 is laid between the resist film 30 and the layer 20 to be processed (FIG. 2A). In the double patterning method, a hard mask is not necessarily required. Instead of the hard mask, an underlayer film made of a carbon film and a silicon-containing intermediate film may be laid, and an organic antireflection film is laid between the hard mask and the resist film. Also good. The hard _{mask, SiO 2, SiN, SiON,} p-Si, TiN or the like is used. In this double patterning method, the resist material used is a positive resist material. In this method, the resist film 30 is exposed and developed (FIG. 2-B), then the hard mask 40 is dry-etched (FIG. 2-C), and after the resist film is peeled off, a second resist film 50 is applied. , Forming, exposing and developing (FIG. 2-D). Next, the layer 20 to be processed is dry-etched (FIG. 2-E), but the etching resistance difference between the hard mask 40 and the resist film 50 is different because the hard mask pattern and the second resist pattern are used as a mask. This causes a shift in the pattern dimensions after etching of the substrate to be processed.
In the double patterning method shown in FIG. 2, exposure and hard mask etching are performed twice, which has a long process and a problem of misalignment during alignment of the exposure apparatus.

On the other hand, in the patterning method of the present invention, as shown in FIG. 1A, for example, the resist film 30 is formed on the processing layer 20 on the substrate 10 via the hard mask 40 in the case of FIG. It is the same. In this state, the required portion 31 is exposed (FIG. 1-B). In this case, even if the exposure portion 31 is exposed with a constant exposure amount E, the exposure amount of the central portion 32 of the exposure portion 31 is large, and the exposure amount gradually decreases toward both end sides 33 and 34. The exposure amount E is an average exposure amount at the exposure location 31. Then, the exposure amount that causes overexposure that has been studied and confirmed in advance for the resist material to be used so that the central portion where the exposure amount increases and the predetermined portions on both sides thereof remain as line widths. As shown in FIG. 1C, the unexposed portion remains as an undissolved portion, and the central portion 32 and overexposed portions on both sides thereof also remain as undissolved portions. Regarding the exposure amount, the exposure amount E _{0 at} which the film thickness becomes ₀ is examined in the curve shown in FIG. 5, and the exposure can be performed at an exposure amount 5 to 10 times the exposure amount. In the contrast curve of FIG. 5, patterning is performed when the negative sensitivity that starts increasing the film thickness is divided by the positive film thickness at which the film thickness becomes 0, as described above, in the range of 3 to 8. The line can be divided into two to double the resolution. Therefore, it is possible to obtain the same resolution as the patterning of the exposure twice in one exposure, and in this case, as shown in FIG. The processing layer 20 can be processed and etched only once (FIG. 1-E). Moreover, in the case of the present invention, it is possible to obtain a resolution double that of the prior art.

A portion 104 shown by hatching in FIG. 7 shows a portion that is recessed by the amount of phase inversion, and FIG. 8 shows a pattern after development when this mask and the resist material according to the present invention are used. In the repeating pattern of the highly transparent phase shift mask, the recessed portion becomes a light shielding portion. Incidentally, in the halftone phase shift mask, the convex shifter portion becomes a light shielding portion. 103 and the surrounding 102 have high light intensity. The resist film 201 is exposed from the translucent portion 102. In this case, the central portion 103 of the space is overexposed and this portion becomes negative, becomes insoluble in the alkaline developer, and forms the line 202. Since the exposed portions on both sides of the line 202 are soluble in the alkaline developer, a space 203 is formed. In addition, the resist film portion corresponding to the mask 104 is not exposed and is insoluble in an alkaline developer, but in this case, light enters the both sides of the non-translucent portion 104 of the mask 101 at the time of exposure. Since the alkali developer becomes soluble, a line 204 slightly narrower than the width of the non-translucent portion 103 is formed. Furthermore, since the four circumferences of the mask 101 are overexposed, a square frame-like line 205 is formed. In addition, when cutting this unnecessary square frame-like line, the patterning for this is required. For this patterning, the pattern shown in FIG. 8 is once transferred to a hard mask by etching, and then a resist material is applied again thereon to perform patterning for cut exposure. However, the exposure for the cut exposure does not require a pattern resolving power, and may be ArF dry or KrF exposure without using expensive immersion lithography.
Therefore, this allows one line pattern on the mask to be divided and formed into one line and two spaces by one exposure, PEB, and development.

FIG. 9 shows a mask pattern in which a portion indicated by hatching is recessed, and FIG. 10 shows a pattern after development when this and the resist material according to the present invention are used. In this case, the same pattern as in FIG. 8 is formed in the same manner.
Therefore, this allows one space pattern on the mask to be divided and formed into one line and two spaces by one exposure, PEB, and development.
When a pair of line and space patterns on the mask are divided and formed into two pairs of line and space by one exposure, PEB, and development, the line and space patterns are formed regardless of the mask patterns of FIGS. It is formed by the case where the pattern of the space is lined up almost infinitely.
When the mask shown in FIG. 9 is used, the pattern shown in FIG. 10 is formed, but FIGS. 8 and 10 are similar patterns although the number of the same lines is different.

  FIG. 11 shows a halftone phase shift mask line with an exposure wavelength of 193 nm, NA 1.35, σ0.9 20 degree dipole illumination, s-polarized illumination, and a wafer size of 88 nm on the wafer, with a shifter angle of 180 degrees and 5% transmittance. The optical contrast when the width (shifter width) is changed is shown. The optical image was calculated with a commercially available simulator (Maxwell Mode of PROLITH Ver. 10 manufactured by KLA-Tencor), and optical contrast was obtained from the obtained optical image.

The optical contrast can be calculated by the following formula.
From the results of FIG. 11, it can be seen that in the case of a 5% halftone phase shift mask, the line width of 44 to 36 nm is the maximum contrast.

FIG. 12 shows a case where the engraving width is changed by an engraved chromeless phase shift mask with a shifter angle of 180 degrees. The maximum contrast is obtained when the engraving width is 40 nm, and the contrast at this time is higher than that of the 5% halftone phase shift mask.
FIG. 13 shows the case where the shifter angle of the engraved chromeless phase shift mask having a width of 40 nm is changed. In this case, the maximum value is around 180 degrees.
FIG. 14 is a comparison of the optical intensities of a 5% halftone phase shift mask with a shifter angle of 180 degrees and a width of 44 nm and a chromeless phase shift (CPL) mask with a shifter angle of 180 degrees and a width of 40 nm. It can be seen that the chromeless phase shift mask has much higher light intensity in the space. As the light intensity in the space increases, the sensitivity of the negative tone of the dual tone resist is improved. In FIG. 14, the chromeless phase shift mask is about twice as strong as the 5% halftone phase shift mask, so it can be expected that the sensitivity is doubled.
In the case of a normal positive resist, even if a chromeless phase shift mask is used, the sensitivity is improved only by a few percent, and the improvement of the dual tone resist does not occur.
In the case of a normal positive resist, a line-and-space 1: 1 pattern can be obtained by giving an exposure amount 3 to 4 times the exposure amount at which the film thickness becomes 0 in the contrast curve. In the case of a dual tone resist, the positive pattern is thinned by overexposure, and at the same time, in order to obtain a negative pattern, the exposure amount becomes 5 to 10 times the exposure amount at which the film thickness becomes 0, resulting in low sensitivity. There is a point. When the highly transparent phase shift mask of the present invention is applied, the intensity of light in the space portion is increased, so that the sensitivity of the negative is increased and the sensitivity can be improved.

In FIG. 1 showing the pattern forming method of the present invention, a silicon substrate is generally used as the substrate 10. Examples of the processed layer 20 include SiO ₂ , SiN, SiON, SiOC, p-Si, α-Si, TiN, WSi, BPSG, SOG, Cr, CrO, CrON, MoSi, a low dielectric film, and an etching stopper film thereof. It is done. The hard mask 40 is as described above. Instead of the hard mask, an underlayer film made of a carbon film and an intermediate intervening layer such as a silicon-containing intermediate film or an organic antireflection film may be formed.

In the present invention, a resist film made of the resist material according to the present invention is formed on the layer to be processed directly or through an intermediate intervening layer such as the hard mask. The thickness of the resist film is 10 to 1, 000 nm, particularly 20 to 500 nm is preferred. This resist film is heated (pre-baked) before exposure, and as this condition, it is preferable to carry out at 60 to 180 ° C., particularly 70 to 150 ° C. for 10 to 300 seconds, and particularly 15 to 200 seconds.
Next, exposure is performed. Here, the exposure is most preferably 193 nm exposure using a high energy beam having a wavelength of 140 to 250 nm, and among these, ArF excimer laser. The exposure may be a dry atmosphere in the air or a nitrogen stream, or may be immersion exposure in water. In ArF immersion lithography, a liquid that has a refractive index of 1 or more, such as pure water or alkane, as the immersion solvent and is highly transparent at the exposure wavelength is used. In immersion lithography, pure water or other liquid is inserted between a pre-baked resist film and a projection lens. As a result, a lens with an NA of 1.0 or more can be designed, and a finer pattern can be formed. Immersion lithography is an important technique for extending the life of ArF lithography to the 45 nm node. In the case of immersion exposure, pure water rinsing (post-soak) after exposure to remove the water droplet residue remaining on the resist film may be performed, and elution from the resist film is prevented, and the surface lubricity of the film is prevented. In order to increase the thickness, a protective film may be formed on the resist film after pre-baking. As a resist protective film used in immersion lithography, for example, a polymer compound having a 1,1,1,3,3,3-hexafluoro-2-propanol residue that is insoluble in water and dissolved in an alkaline developer is used. A base and a material dissolved in an alcohol solvent having 4 or more carbon atoms, an ether solvent having 8 to 12 carbon atoms, or a mixed solvent thereof is preferable. After the resist film is formed, pure water rinsing (post-soak) may be performed to extract acid generators from the film surface or to wash away particles. Rinse for removing water remaining on the film after exposure ( Post soak) may be performed.

A phenomenon in which the amine generated from the photobase generator evaporates during baking, and this re-adheres to the resist surface in the area where the acid is excessive, so that the deprotection proceeds by the acid and the area where the space opens after development does not open. May occur. For this reason, the amine generated from the photobase generator has a high boiling point. Ideally, it is desirable to use a photobase generator that generates an amine having an amino group bonded to the polymer main chain. However, high boiling point bulky amines and high molecular amines have low acid scavenging ability and low inactivation ability. When the inactivation ability is low, the negative contrast becomes low, the shape of the negative pattern becomes a reverse taper shape, and the edge roughness may be deteriorated. The amine generated from the additive type photobase generator has a high inactivation ability, but may evaporate during baking and cause chemical flare. In order to prevent chemical flare, it is effective to apply a protective film on the upper layer of the resist.
Examples of the protective film material are disclosed in JP-A-2006-91798, JP-A-2007-316581, JP-A-2008-81716, JP-A-2008-111089, and JP-A-2009-205132. Materials can be mentioned.

  As the resist material, an additive for increasing the water repellency of the resist surface may be added. This is a polymer having a fluoroalcohol group, and is oriented on the resist surface after spin coating to reduce the surface energy and improve the water slidability. Such materials are disclosed in Japanese Patent Application Laid-Open Nos. 2007-297590 and 2008-122932.

Exposure amount 1 to 200 mJ / cm ² about the exposure, preferably 10 to 100 mJ / cm ^2, more preferably exposed such that the 15~80mJ / cm ² approximately.
Next, post exposure baking (PEB) is performed on a hot plate at 60 to 150 ° C. for 1 to 5 minutes, preferably 80 to 120 ° C. for 1 to 3 minutes.
Further, 0.1 to 5% by weight, preferably 2 to 3% by weight, using an aqueous developer such as tetramethylammonium hydroxide (TMAH) for 0.1 to 3 minutes, preferably 0.5 to 2 minutes. The target pattern is formed on the substrate by development by a conventional method such as a dip method, a paddle method, or a spray method.

  Next, an intermediate intervening layer such as a hard mask is etched using the resist film as a mask, and further, the layer to be processed is etched. In this case, the intermediate intervening layer such as a hard mask can be etched by dry etching using a chlorofluorocarbon or halogen gas, and the etching of the layer to be processed has an etching selectivity with respect to the hard mask. The etching gas and conditions for the etching can be selected as appropriate, and can be performed by dry etching using a gas such as chlorofluorocarbon, halogen, oxygen, and hydrogen. Next, the resist film is removed. This removal may be performed after etching the intermediate intervening layer such as a hard mask. Note that the resist film can be removed by dry etching using oxygen, radicals, or the like, or by a stripping solution such as an amine solvent or an organic solvent such as sulfuric acid / hydrogen peroxide solution.

  EXAMPLES Hereinafter, although a synthesis example, an Example, and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example etc. In addition, a weight average molecular weight (Mw) shows the polystyrene conversion weight average molecular weight by GPC.

[Synthesis example]
As a polymer compound added to the resist material, each monomer is combined and subjected to a copolymerization reaction in a tetrahydrofuran solvent, crystallized in methanol, further washed with hexane, isolated and dried, and shown below. The high molecular compound (polymers 1-8) of a composition was obtained. The composition of the obtained polymer compound was confirmed by ¹ H-NMR, and the molecular weight and dispersity were confirmed by gel permeation chromatography.

Polymer 1
Molecular weight (Mw) = 8,300
Dispersity (Mw / Mn) = 1.76

Polymer 2
Molecular weight (Mw) = 8,800
Dispersity (Mw / Mn) = 1.77

Polymer 3
Molecular weight (Mw) = 7,600
Dispersity (Mw / Mn) = 1.79

Polymer 4
Molecular weight (Mw) = 8,300
Dispersity (Mw / Mn) = 1.92

Polymer 5
Molecular weight (Mw) = 8,900
Dispersity (Mw / Mn) = 1.83

Polymer 6
Molecular weight (Mw) = 7,300
Dispersity (Mw / Mn) = 1.81

Polymer 7
Molecular weight (Mw) = 8,300
Dispersity (Mw / Mn) = 1.79

Polymer 8
Molecular weight (Mw) = 9,300
Dispersity (Mw / Mn) = 1.93

[Resist composition and preparation]
Polymer compound (polymers 1-8) synthesized above, acid generator (PAG1), photobase generator and base proliferator (BG1-12), basic compound (amine quencher: Quenchers 1 and 2), resist surface A water repellent (water repellent polymer 1), a surfactant manufactured by Sumitomo 3M Co., Ltd .; a solvent mixed with 50 ppm of FC-4430 was mixed in the composition shown in Table 1, and the 0.2 μm Teflon (registered trademark) filter was used. A filtered solution was prepared.

Organic solvent: PGMEA (propylene glycol monomethyl ether acetate)
CyH (cyclohexanone)
PGME (propylene glycol monomethyl ether)

  The number of moles of amino groups a generated from the photobase generator in the resist polymer having the composition shown in Table 1 above, the number of moles b of amino groups generated from the added base generator, the number of moles c of amino groups in the quencher, and the acid Table 2 shows values when the number of moles d of the acid generated from the generator and the repeating unit having a sulfonium salt is d, and the value e is obtained by dividing the total number of moles of the amino group by the number of moles of acid.

Patterning evaluation Contrast curve data The resist 1 shown in Table 1 is spin-coated on a silicon wafer with ARC-29A (Nissan Chemical Industry Co., Ltd.) formed to a thickness of 80 nm. The plate was baked at 100 ° C. for 60 seconds to make the resist film thickness 110 nm. This was subjected to open frame exposure using an ArF excimer laser scanner (Nikon Corporation, NSR-S307E, NA0.85, σ0.93, normal illumination) while changing the exposure, and baked at 100 ° C. for 60 seconds (PEB) And developed with an aqueous solution of 2.38 mass% tetramethylammonium hydroxide for 30 seconds. The resist film thickness after development was measured with an optical film thickness meter. The result of the resist 1 is shown in FIG. In FIG. 15, the positive sensitivity at which the film thickness becomes 0 is 18 mJ / cm ² , and the negative sensitivity at which the film thickness starts to increase is 72 mJ / cm ² .

Phase shift mask:
As the phase shift mask, a mask formed on a quartz substrate having a square of 152 mm (6 inches) and a thickness of 6.35 mm (1/4 inch) was used. As the binary mask, a film made of CrCON was used as a light shielding film pattern formed on a quartz substrate of 152 mm (6 inches) and a thickness of 6.35 mm (1/4 inch) square. As an example mask 1, as shown in FIG. 7, a chromeless phase shift mask having a phase difference of 180 degrees in which a line pattern having a pitch of 200 nm and a width of 80 nm is engraved on the wafer, and the comparative mask 1 has a transmittance of 6%. In the halftone phase shift mask having a phase difference of 180 degrees and the comparative example mask 2, a Cr binary mask was used. Table 3 shows the film thickness of the mask, the transmittance, the phase shift angle, and the line width dimension when transferred onto the wafer. Since the reduction ratio of the scanner is 1/4, the dimension on the mask is four times the dimension on the wafer.

The resist material shown in Table 1 is a silicon wafer with a spin-on carbon film ODL-102 (manufactured by Shin-Etsu Chemical Co., Ltd.) having a thickness of 200 nm and a spin-on silicon-containing film SHB-A940 (manufactured by Shin-Etsu Chemical Co., Ltd.). Was spin-coated on a substrate having a thickness of 35 nm, and baked at 100 ° C. for 60 seconds using a hot plate, so that the thickness of the resist film was 80 nm. The resists 1 to 7 were without a protective film, and the resists 8 to 19 were coated with the protective film 1 shown in Table 4 and baked at 90 ° C. for 60 seconds to prepare a protective film having a thickness of 50 nm.


This is an ArF excimer laser scanner (manufactured by Nikon Corporation, NSR-S610C, NA1.05, σ0.98 / 0.78, dipole illumination), and azimuthally polarized illumination on the wafer using the mask shown in Table 3. A mask pattern having dimensions of 100 nm line and 200 nm pitch was exposed, baked (PEB) at a temperature shown in Table 5 for 60 seconds, and developed with an aqueous solution of 2.38 mass% tetramethylammonium hydroxide for 30 seconds.
Use Hitachi High-Technologies Corporation SEM (S-9380) to check whether one 100nm line and space is divided into two, and if divided, two divided The size of the line was measured, and the exposure amount at this time was confirmed.
At this time, the dimensions of both the positive line (line 1 dimension: 204 shown in FIG. 10) and the negative line (line 2 dimension: 202 shown in FIG. 10) were measured. The results are shown in Table 5.

In the resists 1 to 19 of the present invention, the total number of moles of amino groups exceeds the total number of moles of acid generated. By transferring a pattern using a highly transparent chromeless phase shift mask, two lines are formed. It was divided into books, and a line pattern of about 50 nm could be formed with high sensitivity by one exposure and development using a mask of 100 nm line pattern.
On the other hand, when the comparative example mask 1 which is a conventional halftone phase shift mask with low transmittance is used, the negative pattern is thick because of low sensitivity and low contrast. When the comparative example mask 2 which is a binary mask is used, the sensitivity is slightly improved as compared with the case of using a halftone phase shift mask having a low transmittance, but the contrast is low, so the size of the negative pattern is further thicker and partially Only resolved.

DESCRIPTION OF SYMBOLS 10 Substrate 20 Processed layer 30 Resist film 31 Exposure part 32 Center part 33,34 of exposure part End part 40 of exposure part Hard mask 50 Resist film

Claims (8)

A polymer compound containing a repeating unit having an acid labile group, hardly soluble in an alkali developer, a photoacid generator, a photobase generator for generating an amino group, and a photoacid generator having an amino group A resist material containing a quencher that is inactivated by neutralizing the acid generated more and an organic solvent is applied and baked on a substrate, and a highly transparent phase shift mask having a transmittance of 80% or more is used. After the exposure, baking (PEB), and development steps, the film of the unexposed part with a small amount of exposure and the overexposed part with a large amount of exposure are not dissolved in the developer, but the exposed area with an intermediate amount of exposure is dissolved in the developer. a Rupa turn-forming method to obtain a pattern is, photobase generating agent, are those represented by any one of the repeating units a1~a4 in the following general formula (1), said recurring units polymeric compound That is attached to the main chain of Pattern forming method according to symptoms.

(In the formula, R ¹ , R ⁷ , R ¹² and R ¹⁷ are hydrogen atoms or methyl groups. R ² , R ⁸ , R ¹³ and R ¹⁸ are single bonds, methylene groups, ethylene groups, phenylene groups, phenylmethylenes. Group, phenylethylene group, phenylpropylene group, or —C (═O) —O—R ²¹ —, wherein R ²¹ is a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms, or 6 carbon atoms. Is an arylene group having 1 to 10 carbon atoms , or an alkenylene group having 2 to 12 carbon atoms, and R ³ , R ⁹ and R ¹⁴ are a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or carbon Although an aryl group having 6 to 10, the R ²¹ combine with may form a ring together with the nitrogen atom to which they are attached .R ^4, R ^5, R ⁶ is a hydrogen atom, C1-10 A linear, branched or cyclic alkyl group, or an aryl group having 6 to 14 carbon atoms, A C 1-6 linear, branched or cyclic alkyl group, a C 1-6 alkoxy group, a nitro group, a halogen atom, a cyano group, or a trifluoromethyl group. well, R ⁴ and R ^5, R ⁵ and R ^6, or R ⁴ and may be R ⁶ are bonded to form a ring together with the carbon atoms to which they are attached, but the R ^4, R ^5, R ⁶ Not all are hydrogen atoms or all are alkyl groups, R ¹⁰ and R ¹¹ are aryl groups having 6 to 14 carbon atoms, and the aryl groups are linear, branched or cyclic having 1 to 6 carbon atoms. And an alkyl group having 1 to 6 carbon atoms, a nitro group, a halogen atom, a cyano group, a trifluoromethyl group, or a carbonyl group, R ¹⁵ and R ¹⁶ may be a straight chain having 1 to 6 carbon atoms. A chain or branched alkyl group in which R ¹⁵ and R ¹⁶ are bonded to each other and bonded to each other And a nitrogen atom, and may have a benzene ring, a naphthalene ring, a double bond, or an ether bond in the ring, and R ¹⁹ and R ²⁰ are a hydrogen atom, a carbon number of 1 to 8 is a linear, branched or cyclic alkyl group, or an aryl group optionally having the same substituent as R ⁴ , R ⁵ and R ⁶ having 6 to 14 carbon atoms , R ¹⁹ , R ^At least one or both of ²⁰ are aryl groups, or R ¹⁹ and R ²⁰ may be bonded to form a ring together with the carbon atoms to which they are bonded, 0 ≦ a1 <1.0, 0 ≦ a2 <1.0, 0 ≦ a3 <1.0, 0 ≦ a4 <1.0, 0 <a1 + a2 + a3 + a4 <1.0. )   The sum of the total number of moles of amino groups in the quencher and the total number of moles of amino groups generated from the photobase generator is larger than the total number of moles of acids generated from the photoacid generator. Item 4. The pattern forming method according to Item 1. 3. The pattern forming method according to claim 1, wherein the photoacid generator generates sulfonic acid, imidic acid, or methide acid whose α-position is fluorinated by light irradiation. 4. The pattern forming method according to claim 3 , wherein the photoacid generator is a sulfonium salt or iodonium salt acid generator. A line-and-space pattern of a pair of the mask, single exposure, PEB, resolution doubling of any one of claims 1 to 4, characterized in that the separately formed on two pairs of line and space by developing Pattern forming method. One line pattern on the mask, single exposure, PEB, one line and resolution of any one of claims 1 to 4, characterized in that the separately formed into two spaces by development Double pattern formation method. A single space pattern on the mask, single exposure, PEB, one line and resolution of any one of claims 1 to 4, characterized in that the separately formed into two spaces by development Double pattern formation method. 8. The pattern forming method for resolving power doubling according to any one of claims 1 to 7 , which is immersion lithography using an ArF excimer laser having an exposure wavelength of 193 nm as a light source and inserting water between the lens and the substrate. .