JP5551976B2 - High voltage electronics cable - Google Patents

Description

  The present invention relates to a cable used in a high voltage electronic apparatus such as a medical CT (computerized tomography) apparatus or an X-ray apparatus.

  As a cable to which a high-voltage DC voltage is applied for high-voltage electronic equipment such as a medical CT device or an X-ray device, for example, a wire core formed by twisting two wires of a low-voltage wire core and one or two wires of a bare conductor It is known that an internal semiconductive layer, a high voltage insulator, an external semiconductive layer, a shielding layer, and a sheath are provided in this order on the part.

  In such a cable, it is necessary to peel and remove the external semiconductive layer from the high-voltage insulator when connecting a connector or the like to the terminal. For this reason, the outer semiconductive layer and the insulator can be separated. And the removal operation | work is generally performed using cutting tools, such as a knife. That is, a method is used in which a cut is first made in the external semiconductive layer with a knife or the like, and then the external semiconductive layer is peeled off along the cut. However, with this method, there is a risk that even when the outer semiconductive layer is cut, even the high voltage insulator is damaged.

  For this type of problem, a technique has been proposed in which one or more string-like substances made of carbon fibers (fibers) are continuously placed in the cable longitudinal direction in the outer semiconductive layer of a crosslinked polyethylene insulated electric cable (for example, , See Patent Document 1). By pulling the end of the carbon fiber placed in the external semiconductive layer, the external semiconductive layer can be easily torn without cutting with a tool such as a knife.

  However, in such a cable, there is a problem that the electrical performance deteriorates because there is a difference in conductivity between the outer semiconductive layer and the carbon fiber inserted as a string-like substance. In particular, in a small-diameter cable such as a cable for high-voltage electronic equipment, the thickness of the insulator and the external semiconductive layer is thin, so that the difference in conductivity has a great influence on the electrical performance. Furthermore, in a cable with a reduced diameter (for example, an outer diameter of 10 to 70 mm) using an EP rubber composition having a low dielectric constant, the effect of the difference in conductivity on the electrical performance is even greater. For this reason, it has been difficult to simply apply the above technique to a cable for high-voltage electronic equipment.

Japanese Utility Model Publication No. 61-35319

  The present invention has been made to solve the above-described problems of the prior art, and can easily peel and remove the external semiconductive layer from the high-voltage insulator and has excellent electrical performance. The purpose is to provide.

  The high-voltage electronic device cable according to the first aspect of the present invention comprises an inner semiconductive layer, a high-voltage insulator, an outer semi-conductive layer, a shielding layer, and a sheath in this order on the outer periphery of the wire core, and the high-voltage insulator And a cable for high voltage electronic equipment in which an interface between the external semiconductive layer and the external semiconductive layer is peelable, and the volume resistance is substantially equal to the external semiconductive layer along the length direction in the external semiconductive layer. A conductive tearing body having a rate is arranged.

According to a second aspect of the present invention, in the high-voltage electronic device cable according to the first aspect, when the volume resistivity of the outer semiconductive layer is ρ _a , the volume resistivity ρ _b of the conductive tearing body is Is a value that satisfies the following equation.
0.95ρ _a ≦ ρ _b ≦ 1.05ρ _a

According to a third aspect of the present invention, in the cable for high-voltage electronic equipment according to the first or second aspect, the volume resistivity of the outer semiconductive layer and the conductive tear body is 1.0 × 10 ⁵ Ω · cm or less.

  According to a fourth aspect of the present invention, in the high-voltage electronic device cable according to any one of the first to third aspects, the conductive tearing body is made of conductive rubber / plastic. .

  According to a fifth aspect of the present invention, in the cable for high-voltage electronic equipment according to the fourth aspect, the conductive rubber / plastic contains conductive fibers.

  According to a sixth aspect of the present invention, in the high-voltage electronic device cable according to the fifth aspect, the conductive fiber is a carbon fiber.

  According to a seventh aspect of the present invention, in the cable for high-voltage electronic equipment according to any one of the fourth to sixth aspects, the external semiconductive layer is formed of ethylene propylene rubber, carbon black, and stearic acid. It contains.

  According to an eighth aspect of the present invention, in the high-voltage electronic device cable according to any one of the fourth to seventh aspects, the conductive tearing body is integrated with the outer semiconductive layer by coextrusion. Is formed.

  According to a ninth aspect of the present invention, in the cable for high voltage electronic equipment according to the eighth aspect, the type A durometer hardness of the conductive rubber / plastic is a resin type A durometer that forms the outer semiconductive layer. It is larger than the hardness.

  According to the cable for high-voltage electronic equipment of the present invention, the external semiconductive layer can be easily peeled off from the high-voltage insulator and can have excellent electrical performance.

1 is a cross-sectional view showing a first embodiment of a cable for high-voltage electronic equipment according to the present invention. It is a principal part expanded sectional view of the cable for high voltage electronic devices shown in FIG. It is principal part sectional drawing which shows the modification of 1st Embodiment of the cable for high voltage electronic devices of this invention. It is a cross-sectional view which shows 2nd Embodiment of the cable for high voltage electronic devices of this invention. It is a principal part expanded sectional view of the cable for high voltage electronic devices shown in FIG. It is a cross-sectional view which shows other embodiment of the cable for high voltage electronic devices of this invention. It is a cross-sectional view which shows other embodiment of the cable for high voltage electronic devices of this invention.

  Embodiments of the present invention will be described below. Although the description will be made based on the drawings, the drawings are provided for illustration only, and the present invention is not limited to the drawings.

(First embodiment)
FIG. 1 is a cross-sectional view showing a cable for high-voltage electronic equipment according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view showing an enlarged main part thereof, and FIG. 3 is a cross-sectional view showing a modification thereof. It is.

In FIG. 1, the code | symbol 11 has shown the wire core part, and this wire core part 11 is the same diameter as the outer diameter of the 2 line | wires of the low voltage | pressure wire core 12, and the low voltage | pressure wire core 12, or a diameter smaller than it. It is configured by twisting two of the cores 13 together. The low-voltage core 12 includes, for example, a conductor 12a having a cross-sectional area of 1.8 mm ² formed by gathering 19 tin-plated annealed copper wires having a diameter of 0.35 mm, and a polytetrafluoroethylene provided on the conductor 12a. For example, the insulator 12b is 0.25 mm thick. Further, high-voltage lines heart 13, for example, the cross-sectional area comprising a tin annealed copper wire of diameter 0.18mm and stranded collectively fifty consists of bare conductor 13a of 1.25 mm ^2. In some cases, a semiconductive coating (not shown) may be provided on the bare conductor 13a.

  An inner semiconductive layer 14, a high voltage insulator 15, and an outer semiconductive layer 16 are sequentially provided on the outer periphery of the wire core 11. The inner semiconductive layer 14 is formed by winding a semiconductive tape made of, for example, a nylon base material or a polyester base material and / or by extrusion coating of a semiconductive rubber plastic such as a semiconductive ethylene propylene rubber. Yes. The inner semiconductive layer 14 has an outer diameter of, for example, 5.0 mm.

  The high voltage insulator 15 is formed by extrusion coating of insulating rubber / plastic such as ethylene propylene rubber. The high voltage insulator 15 has a thickness of 2.7 mm, for example.

  Furthermore, the outer semiconductive layer 16 is wound around a semiconductive tape made of, for example, a nylon base material, a polyester base material, and / or a semiconductive material such as a semiconductive ethylene propylene rubber, like the inner semiconductive layer 14. It is formed by rubber / plastic extrusion coating. The inner semiconductive layer 14 and the outer semiconductive layer 16 may be made of the same material or different materials, but at least the outer semiconductive layer 16 is peelable from the high voltage insulator 15. It is formed with the material which has. The outer semiconductive layer 16 has a thickness of 0.2 mm, for example.

Inside the outer semiconductive layer 16, a string-like conductive tear body (hereinafter referred to as a conductive tear string) 17A having a volume resistivity substantially equal to that of the outer semiconductive layer 16 is provided as a conductive tear body. One or more (two in the example of the drawing) are embedded along the cable length direction. The volume resistivity of the conductive tear string 17A is 0.95 to 1.05 times the volume resistivity of the external semiconductive layer 16, that is, the volume resistivity of the external semiconductive layer 16 is ρ _a the volume resistivity [rho _b of the tear string 17A is preferably a value that satisfies the following equation (1).
0.95ρ _a ≦ ρ _b ≦ 1.05ρ _a (1)

If the volume resistivity of the conductive tear string 17A is less than 0.95 times or more than 1.05 times the volume resistivity of the outer semiconductive layer 16, the difference in conductivity is too great and the cable electrical Performance decreases. In order to obtain more reliable electrical performance, the volume resistivity of the conductive tear string 17A is 0.98 to 1.02 times the volume resistivity of the outer semiconductive layer 16, that is, the following formula (2) It is more preferable that the value satisfies the above.
0.98ρ _a ≦ ρ _b ≦ 1.02 ρ _a (2)

Also, the volume resistivity of the conductive tear string 17A and the outer semiconductive layer 16 is preferably 1.0 × 10 ⁵ Ω · cm or less from the viewpoint of preventing partial discharge, More preferably, it is 10 ³ Ω · cm or more and 1.0 × 10 ⁵ Ω · cm or less.

  The conductive tear string 17A is made of rubber or plastic to which the above-described conductivity is imparted by blending a conductive filler. As the conductive filler, in addition to carbon fiber and carbon powder, Ag (silver), Au (gold), Cu (copper), Al (aluminum), Cr (chromium), Co (cobalt), Fe (iron), Mo (Molybdenum), Ni (nickel), Pt (platinum), Pd (palladium), Sn (tin), or a metal, or a powder or fiber made of an alloy of these metals. These can be used individually by 1 type or in mixture of 2 or more types. Among these, carbon fiber is preferable from the viewpoint of strength and volume resistivity with the external semiconductive layer. The conductivity of the conductive tear string 17A can be adjusted by the type of conductive filler to be used, the blending amount thereof, and the like.

  Even if the conductive rubber / plastic composing the conductive tear string 17A is blended with additives that improve the hardness, tensile strength, etc., as required, as long as the effects of the present invention are not impaired. Good.

  The conductive tear string 17A preferably has a tensile strength measured in accordance with JIS K 6251 of 7.0 MPa or more and an elongation of 120% or more. If the tensile strength is less than the above range, or if the elongation is less than the above range, the mechanical strength necessary for tearing the outer semiconductive layer 16 is insufficient, and there is a risk that it will break during work and cannot be torn. is there.

  The cross-sectional shape and size of the conductive tear string 17A are not particularly limited as long as it is a shape and size that can tear the outer semiconductive layer 16, and for example, the cross-sectional shape is shown in FIGS. Such a semicircular shape or a circular shape as shown in FIG. 3 may be used. However, from the viewpoint of reliably tearing the outer semiconductive layer 16, it is preferable that at least a part of the conductive tear string 17A is embedded in a position where it is in contact with or substantially in contact with the high-voltage insulator 15, In that case, the cross-sectional shape is semicircular so as not to generate a gap between the outer semiconductive layer 16 and the high voltage insulator 15, in particular, an arc surface that can match the outer peripheral surface of the high voltage insulator 15. The semicircular shape is preferably provided, and the arc surface is embedded so as to contact the outer peripheral surface of the high-voltage insulator 15. The size is preferably a size that does not protrude from the outer peripheral surface of the outer semiconductive layer 16 from the viewpoint of the electrical performance and appearance of the cable. Furthermore, it is preferable to embed a plurality of conductive tear strings 17A at substantially equal intervals in the circumferential direction. In the present embodiment, two conductive tear strings 17 </ b> A are provided at substantially opposing positions with the wire core portion 11 in between. In this case, the outer semiconductive layer 16 can be easily torn by pulling the two conductive tear strings 17A in opposite directions.

  The outer semiconductive layer 16 in which the conductive tear string 17A is arranged in this way is arranged so that the conductive tear string 17A manufactured in advance on the outer periphery of the high voltage insulator 15 extends along the outer periphery of the high voltage insulator 15. It is formed by winding a semiconductive tape to be the outer semiconductive layer 16 or by extruding a semiconductive rubber / plastic.

  On the outer semiconductive layer 16 on which the conductive tear string 17A is disposed, a shielding layer 18 having a thickness of 0.3 mm made of a braided tin-plated annealed copper wire, for example, is further provided. A sheath 19 is provided by extrusion coating of vinyl chloride resin.

  In the cable for high voltage electronic equipment configured as described above, since the conductive tear string 17A is embedded in the external semiconductive layer 16, when connecting a connector or the like to the terminal, the conductive tear string 17A is The outer semiconductive layer 16 can be easily removed by pulling outward. In addition, since the conductive tear string 17A has a volume resistivity substantially equal to that of the external semiconductive layer 16, it is possible to suppress a decrease in performance of the external semiconductive layer 16 due to the arrangement.

(Second Embodiment)
FIG. 4 is a cross-sectional view showing a cable for high-voltage electronic equipment according to a second embodiment of the present invention, and FIG. 5 is a cross-sectional view showing an enlarged main part thereof. In the following embodiments, in order to avoid overlapping description, description of points that are common to the first embodiment will be omitted, and differences will be mainly described.

  As shown in FIGS. 4 and 5, the high-voltage electronic device cable according to the second embodiment is the same as the high-voltage electronic device cable according to the first embodiment, but instead of the conductive tear string 17A. In the layer 16, a conductive tearing body 17 </ b> B integrally formed by co-extrusion with the outer semiconductive layer 16 is arranged.

  The conductive tear 17B can be co-extruded with the outer semiconductive layer 16 and is harder than the outer semiconductive layer 16. Specifically, for example, the outer semiconductive layer 16 is made of ethylene propylene rubber. The base polymer is made of a rubber / plastic material in which the above-described conductive filler is blended with the same base polymer and the volume resistivity and hardness are adjusted.

  The hardness of the rubber / plastic constituting the conductive tearing body 17B is preferably 1.5 times or more the hardness constituting the outer semiconductive layer 16, from the viewpoint of tearability with respect to the outer semiconductive layer 16, More preferably, it is 2.0 times or more. However, if it is excessively hard, the flexibility may be deteriorated, so that it is preferably 2.5 times or less the hardness constituting the outer semiconductive layer 16. The hardness of the conductive tear 17B is preferably 100 to 180, more preferably 100 to 150, as the type A durometer hardness measured according to JIS K 6253 from the viewpoint of poor bending. preferable.

The volume resistivity of the conductive tear 17B is the same as that of the conductive tear string 17, and is substantially the same as that of the external semiconductive layer 16, preferably 0.95 to 1.05 of the volume resistivity of the external semiconductive layer 16. Times, more preferably 0.98 to 1.02. Further, the volume resistivity of the conductive tear 17B is preferably 1.0 × 10 ⁵ Ω · cm or less, and 1.0 × 10 ³ Ω · cm or more from the viewpoint of preventing partial discharge. More preferably, it is 0 × 10 ⁵ Ω · cm or less.

  Examples of the conductive filler blended in the conductive tear body 17 </ b> B include the same fillers as exemplified for the conductive tear string 17. Furthermore, stearic acid etc. are mentioned as an additive mix | blended as needed mainly in order to adjust hardness.

  In addition, as for the electroconductive tearing body 17B, it is preferable that the tensile strength measured based on JISK6251 is 7.0 Mpa or more, and the elongation is 120% or more. If the tensile strength is less than the above range or the elongation is less than the above range, the mechanical strength necessary for tearing the outer semiconductive layer 16 may be insufficient, and tearing may not be possible.

  In the example shown in FIGS. 4 and 5, the conductive tearing body 17 </ b> B has substantially the same thickness as the outer semiconductive layer 16, and the surface thereof is exposed on both the inner and outer peripheral surfaces of the outer semiconductive layer 16. That is, the high voltage insulator 15 and the shielding layer 18 are provided so as to be in contact with each other, but it is not always necessary to be configured in this way, for example, the outer semiconductive layer 16 is not exposed to the outer peripheral surface, It may be provided so as to contact only the high voltage insulator 15. However, from the viewpoint of tearability with respect to the outer semiconductive layer 16, it may be provided so as to be exposed on both the inner and outer peripheral surfaces of the outer semiconductive layer 16, as in the examples shown in FIGS. preferable.

  In the cable for high voltage electronic equipment configured as described above, since the conductive tearing body 17B is embedded in the outer semiconductive layer 16, as in the first embodiment, when connecting a connector or the like to the terminal In addition, the outer semiconductive layer 16 can be easily removed. That is, the end portion of the conductive tearing body 17B disposed in the outer semiconductive layer 16 is separated from the outer semiconductive layer 16 using, for example, a knife, and the separated end is pulled outward to pull the outer semiconductive layer 16B. The conductive layer 16 can be easily removed. In this method, a knife or the like is used, but since its use is limited to the end portion, there is no problem. In addition, since the conductive tear string 17A has a volume resistivity substantially equal to that of the external semiconductive layer 16, it is possible to suppress a decrease in performance of the external semiconductive layer 16 due to the arrangement.

  In addition, in the present embodiment, the electric tearing body 17B is formed by co-extrusion with the external semiconductive layer 16, so that it is more closely attached to the external semiconductive layer 16 and the high voltage insulator 15 than in the first embodiment. It is easier to ensure the property, and better and stable electrical performance can be obtained.

(Other embodiments)
In the said 1st and 2nd embodiment, although the wire core part 11 is comprised by twisting together 2 articles | strands of the low voltage | pressure core 12 and 2 articles | strands of the high voltage | pressure core 13, as shown, for example in FIG. To. A configuration in which the wire core portion 11 twists two wires of the low-voltage wire core 12 and one wire of the high-voltage wire core 13 (in the example of the drawing, the semiconductive coating 13b is provided on the bare conductor 13a). It may be said. Further, for example, as shown in FIG. 7, the wire core portion 11 is composed only of the bare conductor 13a, and the internal semiconductive layer 14 and the high voltage insulator 15 are formed on the wire core portion 11 (bare conductor 13a). The outer semiconductive layer 16 on which the conductive tear string 17 or the conductive tear body 17B is disposed, the shielding layer 18 and the sheath 19 may be provided in this order. 6 is an example in which, in the first embodiment, the wire core portion 11 has a configuration in which two wires of the low-voltage wire core 12 and one wire of the high-voltage wire core 13 are twisted together. The high-voltage electronic device cable of FIG. 6 is an example in which the wire core portion 11 is configured by only the bare conductor 13a in the first embodiment.

In these cables for high-voltage electronic devices, as in the first and second embodiments, when connecting a connector or the like to the terminal, the outer semiconductive layer 16 is attached by the conductive tear string 17A or the conductive tear member 17B. It can be easily removed, and the deterioration of the performance of the external semiconductive layer 16 due to the arrangement of the conductive tear string 17A or the conductive tear body 17B can be suppressed. Further, in the example in which the conductive tearing body 17B is disposed in the outer semiconductive layer 16, it is possible to further improve and stabilize the electrical performance.
Similarly to the above example, a semiconductive coating 21b may be provided on the bare conductor 21a.

  As mentioned above, although the embodiment of the cable for high-voltage electronic equipment of the present invention has been described, the present invention is not limited to the above-described embodiments as they are, and all modifications and changes can be made without departing from the gist of the present invention. Is possible.

  EXAMPLES Next, although an Example demonstrates this invention further in detail, this invention is not limited to these Examples at all.

Example 1
Two low-voltage wire cores in which a conductor having a cross-sectional area of 1.8 mm ^{2 formed} by gathering 19 tin-plated annealed copper wires having a diameter of 0.35 mm is coated with an insulator having a thickness of 0.25 mm made of polytetrafluoroethylene. And ^two high-voltage wire cores made of bare conductors having a cross-sectional area of 1.25 mm ^{2 formed} by twisting 50 tin-plated annealed copper wires having a diameter of 0.18 mm, and the outer periphery thereof is made of a nylon base material. A conductive tape was wound to provide an internal semiconductive layer having a thickness of about 0.5 mm.

  On this internal semiconductive layer, 100 parts by mass of EPDM (trade name Mitsui EPT # 1045 manufactured by Mitsui Chemicals), 0.5 part by mass of fumed silica (trade name Aerosil 300 manufactured by Nippon Aerosil Co., Ltd.), and dicumyl peroxide ( The insulating composition prepared by uniformly kneading 2.5 parts by weight of DCP) with a mixing roll was extrusion coated, and then heat-crosslinked to form a high-pressure insulator having a thickness of 2.7 mm.

Further, 100 parts by mass of EPDM (trade name Mitsui EPT # 1045), 120 parts by mass of carbon black, 1 part by mass of stearic acid, and 8 parts by mass of dicumyl peroxide (DCP) are uniformly mixed on this high-pressure insulator by a mixing roll. The semiconductive composition prepared by kneading was extrusion coated and then heated and crosslinked to provide an external semiconductive layer having a thickness of about 0.15 mm and a volume resistivity ρa of 1.0 × 10 ⁴ Ω · cm. At that time, a string (volume resistivity ρb: 1.0 × 10 ⁴ Ω · cm, tensile strength: 10 MPa, tensile, made of carbon fiber reinforced plastic having a semicircular cross section (radius 0.1 mm) on the high-pressure insulator. (Elongation: 250%) The two wires were coated at a position facing each other across the wire core portion while being parallel to the wire core portion.

  Thereafter, a 0.3 mm-thick shielding layer made of tin-plated annealed copper wire braid is provided on the outer semiconductive layer, and a soft vinyl chloride resin sheath is extrusion coated on the outer side to provide high-voltage electrons having an outer diameter of 13.2 mm. Equipment cables were manufactured.

Examples 2-5, Comparative Examples 1-2
For high voltage electronic devices having a volume resistivity ratio (ρb / ρa) as shown in Table 1 in the same manner as in Example 1 except that a cord made of carbon fiber reinforced plastic having a different volume resistivity ρb was used. A cable was manufactured.

  About the cable for high voltage electronic devices obtained in the said Examples 1-5 and Comparative Examples 1-2, the partial discharge test based on the Institute of Electrical Engineers electrical specification investigation standard JEC-0401 was done, and the presence or absence of partial discharge was investigated. . The results are shown in Table 1. The volume resistivity ρa of the external semiconductive layer was measured in accordance with JIS K 6271: 2001 6 by preparing a sheet sample having a thickness of 1 mm.

Examples 6-9, Comparative Examples 3-4
Each of the two semiconductive compositions having different volume resistivity as shown in Table 2 was used, and when one semiconductive composition was extrusion coated, the other semiconductive composition was formed into a string shape. A cable for a high voltage electronic device was manufactured in the same manner as in Example 1 except that the outer semiconductive layer 16 provided with the conductive tear 17B as shown in FIG. 4 was formed by coextrusion.

  About the cable for high voltage electronic devices obtained by the said Examples 6-9 and Comparative Examples 3-4, the partial discharge test based on the Institute of Electrical Engineers of Japan standard specification JEC-0401 was done, and the presence or absence of partial discharge was investigated. . The results are shown in Table 2 together with the tensile strength of the tear string. The tensile strength of the tear string is JIS K 6251, and a dumbbell-shaped No. 3 sheet sample having a thickness of 1 mm produced by press molding at 160 ° C. for 45 minutes has a temperature of 23 ° C. and a tensile speed of 500 mm / min. It measured on condition of this.

  DESCRIPTION OF SYMBOLS 11 ... Wire core part, 12 ... Low voltage | pressure core, 12a ... Conductor, 12b ... Insulator, 13 ... High voltage | pressure core, 13a ... Bare conductor, 13b ... Semiconductive coating | cover, 14 ... Internal semiconductive layer, 15 ... High voltage | pressure Insulator, 16 ... outer semiconductive layer, 17A ... conductive tear string, 17B ... conductive tear, 18 ... shielding layer, 19 ... sheath.

Claims (8)

High voltage electrons having an inner semiconductive layer, a high voltage insulator, an outer semiconductive layer, a shielding layer, and a sheath in this order on the outer periphery of the wire core, and the interface between the high voltage insulator and the outer semiconductive layer is peelable A cable for equipment,
In the outer semiconductive layer , a conductive tearing body is disposed along the cable length direction ,
A cable for high-voltage electronic equipment , wherein the volume resistivity ρ _b of the conductive tearing body is a value satisfying the following expression, where ρ _a is _a volume resistivity of the outer semiconductive layer .
0.95ρ _a ≦ ρ _b ≦ 1.05ρ _a The high voltage electronics cable of claim 1, wherein the volume resistivity of the outer semiconductive layer and the conductive tearing member is not more than 1.0 × 10 ⁵ Ω · cm. The conductive tearing bodies, according to claim 1 or 2, high-voltage electronic device for cables according to characterized in that it consists of a conductive polymer material. The high-voltage electronic device cable according to claim 3, wherein the conductive polymer material contains conductive fibers. The high-voltage electronic device cable according to claim 4 , wherein the conductive fiber is a carbon fiber. The cable for high-voltage electronic equipment according to any one of claims 1 to 5 , wherein the external semiconductive layer contains ethylene propylene rubber, carbon black, and stearic acid. The cable for high-voltage electronic equipment according to any one of claims 3 to 6 , wherein the conductive tearing body is integrally formed with the outer semiconductive layer by coextrusion. 8. The cable for high-voltage electronic equipment according to claim 7 , wherein the type A durometer hardness of the conductive polymer material is larger than the type A durometer hardness of the resin forming the outer semiconductive layer.

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