JP5548292B1 - Heating vaporization system and heating vaporization method - Google Patents
Heating vaporization system and heating vaporization method Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 90
- 230000008016 vaporization Effects 0.000 title claims abstract description 36
- 238000009834 vaporization Methods 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 95
- 238000001514 detection method Methods 0.000 claims abstract description 49
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 42
- 239000011344 liquid material Substances 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- 238000009833 condensation Methods 0.000 abstract description 8
- 230000005494 condensation Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 96
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
- F17C2270/00—Applications
- F17C2270/05—Applications for industrial use
- F17C2270/0518—Semiconductors
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0028—Regulation
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Measuring Volume Flow (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- General Engineering & Computer Science (AREA)
Abstract
【課題】ガス流量計や材料ガスに生じる不具合を防止するとともに、ガス導出配管内での結露を防止した加熱気化システムおよび加熱気化方法を提供する。
【解決手段】材料を収容し、この材料を加熱及び気化して材料ガスを生成する容器２と、容器２に接続され、容器２内で生成された前記材料ガスを導出する配管３と、配管３に設けられたセンサ用流路３ａと、センサ用流路３ａに設けられた熱式流量センサ６を具備し、該熱式流量センサ６を用いて配管３を流れる材料ガスの流量を測定する流量検出部４ａと、流量検出部４ａの上流における配管３を流れる前記材料ガスの流量を調整する流量調整部４ｂと、流量検出部４ａの検出結果を用いて、流量調整部４ｂを制御する制御部４ｃとを備える加熱気化システム１。
【選択図】図１The present invention provides a heating vaporization system and a heating vaporization method that prevent problems occurring in a gas flow meter and a material gas and prevent condensation in a gas outlet pipe.
A container 2 for containing a material and generating a material gas by heating and vaporizing the material, a pipe 3 connected to the container 2 for leading out the material gas generated in the container 2, and a pipe 3 and a thermal flow sensor 6 provided in the sensor flow path 3a, and the flow rate of the material gas flowing through the pipe 3 is measured using the thermal flow sensor 6. A flow rate detection unit 4a, a flow rate adjustment unit 4b that adjusts the flow rate of the material gas flowing in the pipe 3 upstream of the flow rate detection unit 4a, and a control that controls the flow rate adjustment unit 4b using the detection result of the flow rate detection unit 4a. The heating vaporization system 1 provided with the part 4c.
[Selection] Figure 1
Description
本発明は、例えば半導体製造等に用いられる材料を加熱・気化する加熱気化システムおよび加熱気化方法に関する。 The present invention relates to a heating vaporization system and a heating vaporization method for heating and vaporizing a material used for semiconductor manufacturing, for example.
この加熱気化システムおよび加熱気化方法として例えば特許文献１記載のものがある。 There exists a thing of patent document 1 as this heating vaporization system and a heating vaporization method, for example.
特許文献１記載の加熱気化システムおよび加熱気化方法は、液体材料を収容するとともに、この液体材料を加熱・気化して材料ガスを発生させる材料タンクと、材料タンクで発生した材料ガスを導出するガス導出配管と、ガス導出配管を流れる材料ガスの流量を測定するガス流量計と、ガス流量計よりも下流に配置されてガス導出配管を流れる材料ガスの流量を調整するガス流量制御弁とを備える。 The heating vaporization system and the heating vaporization method described in Patent Literature 1 contain a liquid material, heat and vaporize the liquid material to generate a material gas, and a gas for deriving the material gas generated in the material tank A lead-out pipe, a gas flow meter that measures the flow rate of the material gas flowing through the gas lead-out pipe, and a gas flow rate control valve that is arranged downstream of the gas flow meter and adjusts the flow rate of the material gas flowing through the gas lead-out pipe .
しかし、特許文献１記載のような従来の加熱気化システムでは、材料ガスの流量を調整するためにガス流量調整弁を開閉すると、圧力損失が発生して、ガス流量調整弁の上流の圧力が下流の圧力よりも高くなり、ガス流量調整弁の上流を流れる材料ガスが気体状態から液体状態となって結露しやすくなるという問題が生じる。 However, in the conventional heating and vaporization system as described in Patent Document 1, when the gas flow rate adjustment valve is opened and closed to adjust the flow rate of the material gas, a pressure loss occurs, and the pressure upstream of the gas flow rate adjustment valve is reduced downstream. This causes a problem that the material gas flowing upstream of the gas flow rate adjusting valve is changed from a gas state to a liquid state and is likely to condense.
この問題を解決するためには、ガス流量調整弁の圧力損失を見越して、材料ガスが結露しないように、材料タンク、ガス導出配管、ガス流量計及びガス流量調整弁の温度を上げる方法が考えられる。しかし、材料ガスの比熱を用いて流量を計測する熱式のガス流量計を用いる場合、材料ガスとガス流量計の温度をあげると、ガス流量計に内蔵されるセンサの温度を必要以上に上げる必要が生じる。すると、ガス流量計のセンサが測定可能な耐熱温度の範囲を超えてしまい、正確に流量を測ることができなくなるという問題が生じる。また、ガス流量計に内蔵される電子回路やセンサ等が劣化して、ガス流量計自体の寿命が短くなってしまうという問題もある。 In order to solve this problem, a method of raising the temperature of the material tank, the gas outlet piping, the gas flow meter and the gas flow adjustment valve in anticipation of the pressure loss of the gas flow adjustment valve is considered. It is done. However, when using a thermal gas flow meter that measures the flow rate using the specific heat of the material gas, raising the temperature of the material gas and the gas flow meter raises the temperature of the sensor built in the gas flow meter more than necessary. Need arises. As a result, the temperature of the gas flow meter exceeds the measurable temperature range, and the flow rate cannot be measured accurately. There is also a problem that the life of the gas flow meter itself is shortened due to deterioration of an electronic circuit, a sensor and the like built in the gas flow meter.
さらに、ガス流量計およびガス流量制御弁の温度を上げるとガス導出配管を流れる材料ガスの温度も上昇し、材料ガスが熱分解を起こして劣化するという問題も生じうる。 Furthermore, when the temperature of the gas flow meter and the gas flow control valve is raised, the temperature of the material gas flowing through the gas outlet pipe also rises, which may cause a problem that the material gas is deteriorated due to thermal decomposition.
本発明は上記問題を鑑み、ガス流量計や材料ガスに生じる不具合を防止するとともに、ガス導出配管内での結露を防止した加熱気化システムおよび加熱気化方法を提供することをその主たる所期課題とするものである。 In view of the above-mentioned problems, the present invention aims to provide a heating vaporization system and a heating vaporization method that prevent problems in gas flowmeters and material gases and prevent condensation in the gas outlet pipe. To do.
本発明の加熱気化システムは、材料を収容し、この材料を加熱及び気化して材料ガスを生成する容器と、前記容器に接続され、前記容器内で生成された前記材料ガスを導出する配管と、前記配管に設けられたセンサ用流路と、前記センサ用流路に設けられた熱式流量センサを具備し、該熱式流量センサを用いて前記配管を流れる前記材料ガスの流量を測定する流量検出部と、前記流量検出部の上流に設けられて、前記配管を流れる前記材料ガスの流量を調整する流量調整部と、前記流量検出部の測定結果を用いて、前記流量調整部を制御する制御部とを備える。 The heating and vaporizing system of the present invention contains a material, and heats and vaporizes the material to generate a material gas, and a pipe connected to the container and leading to the material gas generated in the container. A sensor flow path provided in the pipe, and a thermal flow sensor provided in the sensor flow path, and the flow rate of the material gas flowing through the pipe is measured using the thermal flow sensor. A flow rate detection unit, a flow rate adjustment unit that is provided upstream of the flow rate detection unit and adjusts the flow rate of the material gas flowing through the pipe, and controls the flow rate adjustment unit using the measurement result of the flow rate detection unit A control unit.
このような構成であれば、流量検出部を流量調整部の下流側に設けたので、圧力損失を考慮して流量調整部の温度を予め上げておく場合に、流量検出部の温度を流量調整部の温度以上に上げる必要がない。そのため、流量検出部の温度を上げることによる流量検出部の劣化や材料ガスの劣化等の悪影響を防ぐとともに、流量調整部の圧力損失に起因する配管内の結露を防いで、半導体製造チャンバ等に材料ガスを安定供給することができる。 In such a configuration, since the flow rate detection unit is provided on the downstream side of the flow rate adjustment unit, the temperature of the flow rate detection unit is adjusted when the temperature of the flow rate adjustment unit is raised in advance in consideration of pressure loss. There is no need to raise the temperature above the temperature. For this reason, it is possible to prevent the adverse effects such as deterioration of the flow rate detection unit and material gas caused by raising the temperature of the flow rate detection unit, and prevent condensation in the piping due to pressure loss of the flow rate adjustment unit, so The material gas can be stably supplied.
なお、本発明の流量制御装置は、収容した材料を加熱及び気化して材料ガスを生成する容器に連結されて前記容器内で生成された前記材料ガスが流れる配管に接続される接続部と、前記配管に設けられたセンサ用流路と、前記センサ用流路に設けられた熱式流量センサを具備し、該熱式流量センサを用いて前記配管を流れる前記材料ガスの流量を測定する流量検出部と、前記流量検出部の上流に設けられて、前記配管を流れる前記材料ガスの流量を調整する流量調整部と、前記流量検出部の測定結果を用いて、前記流量調整部を制御する制御部とを備えるものを挙げることができる。 The flow control device of the present invention is connected to a container that heats and vaporizes the contained material to generate a material gas and is connected to a pipe through which the material gas generated in the container flows, A flow rate for measuring the flow rate of the material gas flowing through the piping using the thermal flow rate sensor provided with a sensor flow channel provided in the piping and a thermal flow rate sensor provided in the sensor flow channel The flow rate adjustment unit is controlled by using a detection unit, a flow rate adjustment unit that is provided upstream of the flow rate detection unit and adjusts the flow rate of the material gas flowing through the pipe, and a measurement result of the flow rate detection unit. A thing provided with a control part can be mentioned.
また、流量検出部または流量調整部の少なくともいずれか一方において、前記配管を流れる材料ガスを加熱するための加熱手段をさらに備えれば、流量調整部の温度を結露が生じないように予め上げておくことや、流量検出部の温度を材料ガスが再度液化しない温度に維持することができ、配管内で結露が発生することを確実に防ぐことができる。 In addition, if at least one of the flow rate detection unit and the flow rate adjustment unit further includes a heating means for heating the material gas flowing through the pipe, the temperature of the flow rate adjustment unit is raised in advance so as not to cause condensation. It is possible to maintain the temperature of the flow rate detection unit at a temperature at which the material gas is not liquefied again, and it is possible to reliably prevent dew condensation in the piping.
さらに前記流量調整部の上流側又は下流側に位置する前記配管の内部に配置されて、材料ガスを加熱する内部加熱手段を備えれば、加熱手段が配管の外部に配置される場合と比較して効率よく加熱手段の熱を材料ガスに伝達することができる。そのため、材料ガスを均一に加熱することができ、加熱ムラに起因する流量検出部の検出精度の低下を防ぐことができる。 Furthermore, if the internal heating means for heating the material gas is provided inside the pipe located upstream or downstream of the flow rate adjusting unit, the heating means is compared with the case where the heating means is arranged outside the pipe. Thus, the heat of the heating means can be efficiently transmitted to the material gas. Therefore, the material gas can be heated uniformly, and a reduction in detection accuracy of the flow rate detection unit due to uneven heating can be prevented.
このように構成した本発明の加熱気化システムおよび加熱気化方法によれば、ガス流量計や材料ガスに生じる不具合を防止するとともに、ガス導出配管内での結露を防止することができる。 According to the heating vaporization system and the heating vaporization method of the present invention configured as described above, it is possible to prevent problems occurring in the gas flow meter and the material gas and to prevent condensation in the gas outlet pipe.
＜第１実施形態＞
本発明の第１実施形態にかかる加熱気化システム１について、以下図面を参照しながら説明する。
<First Embodiment>
A heating vaporization system 1 according to a first embodiment of the present invention will be described below with reference to the drawings.
第１実施形態の加熱気化システム１は、例えば半導体製造に用いられる液体材料を加熱・気化して材料ガスを生成し、この材料ガスを半導体製造チャンバ等に供給するためのものである。そして、図１に示すように、液体材料を収容するとともに、この液体材料を加熱及び気化して材料ガスを生成する容器２と、該容器２で生成された材料ガスを半導体製造チャンバ等へと供給するための配管３と、配管３を流れる材料ガスの流量を制御する流量制御装置４とを備える。 The heating and vaporizing system 1 of the first embodiment is for heating and vaporizing a liquid material used for semiconductor manufacturing, for example, to generate a material gas, and supplying the material gas to a semiconductor manufacturing chamber or the like. As shown in FIG. 1, a container 2 for containing a liquid material and generating a material gas by heating and vaporizing the liquid material, and a material gas generated in the container 2 into a semiconductor manufacturing chamber or the like. A pipe 3 for supplying and a flow rate control device 4 for controlling the flow rate of the material gas flowing through the pipe 3 are provided.
容器２は、液体材料を収容する中空のタンク２ａと、タンク２ａを加熱する加熱器２ｂと、タンク２ａの上壁を貫通するように設けた導入配管２ｃと、タンク２ａの上壁から突出させた導出配管２ｄとを有するものである。 The container 2 protrudes from a hollow tank 2a for storing a liquid material, a heater 2b for heating the tank 2a, an introduction pipe 2c provided so as to penetrate the upper wall of the tank 2a, and an upper wall of the tank 2a. And a lead-out pipe 2d.
加熱器２ｂは、例えばヒータ等であってタンク２ａの外周側面及び底面を囲むように配置されている。この加熱器２ｂによって加熱されたタンク２ａ内では、液体材料が飽和蒸気圧に達して気化し、材料ガスが生成される。 The heater 2b is, for example, a heater and is disposed so as to surround the outer peripheral side surface and the bottom surface of the tank 2a. In the tank 2a heated by the heater 2b, the liquid material reaches the saturated vapor pressure and is vaporized to generate a material gas.
導入配管２ｃは、タンク２ａに液体材料を供給するためのものであって、その下端をタンク２ａの底面近傍まで延ばしたものである。 The introduction pipe 2c is for supplying a liquid material to the tank 2a, and its lower end is extended to the vicinity of the bottom surface of the tank 2a.
導出配管２ｄは、タンク２ａの内部空間に連通するものであり、タンク２ａ内で生成された材料ガスがこの導出配管２ｄを通ってタンク２ａから導出するように構成してある。 The lead-out piping 2d communicates with the internal space of the tank 2a, and the material gas generated in the tank 2a is configured to be led out from the tank 2a through the lead-out piping 2d.
なお、導入配管２ｃ及び導出配管２ｄには、これら配管を流れる流体の流量を調整するためのバルブがそれぞれ設けられている。 The inlet pipe 2c and the outlet pipe 2d are provided with valves for adjusting the flow rate of fluid flowing through these pipes.
配管３は、その上流側の一端が導出配管２ｄに接続されるとともに、その下流側の他端が半導体製造チャンバ等に接続されるものである。そして、タンク２ａから導出配管２ｄを介して導出された材料ガスがこの配管３を通って、半導体製造チャンバ等に供給される。 One end of the pipe 3 on the upstream side is connected to the lead-out pipe 2d, and the other end on the downstream side is connected to a semiconductor manufacturing chamber or the like. Then, the material gas led out from the tank 2a through the lead-out pipe 2d is supplied to the semiconductor manufacturing chamber or the like through the pipe 3.
また配管３の一部には、配管３から分岐して再度配管３と合流する概略コの字形状のセンサ用配管３ａが設けられている。このセンサ用配管３ａは配管３を流れる材料ガスの流量を調整するセンサ用流路となる。また、センサ用配管３ａの管径は、配管３の管径に対して十分小さいものである。 Also, a part of the pipe 3 is provided with a substantially U-shaped sensor pipe 3 a that branches from the pipe 3 and joins the pipe 3 again. The sensor pipe 3 a becomes a sensor flow path for adjusting the flow rate of the material gas flowing through the pipe 3. The pipe diameter of the sensor pipe 3 a is sufficiently smaller than the pipe diameter of the pipe 3.
また、センサ用配管３ａが配管３から分岐する分岐点から、センサ用配管３ａが配管３に合流する合流点まではバイパス流路３ｂとなり、このバイパス流路３ｂには、エッチングで孔が設けられた平板を積層した図示しないバイパスが配置されている。このバイパスを通過する材料ガスに生じる圧力損失は、センサ用配管３ａを通過する材料ガスに生じる圧力損失と同じものとなる。
このバイパス流路３ｂが設けられた配管３の周囲を囲むように、第１ブロック体５が設けられている。この第１ブロック体５は、概略直方体形状をなす熱伝導性に優れた金属で構成されるものであって、その内部に、バイパス流路３ｂが設けられた配管を配置するための貫通孔が設けられている。
Further, a bypass flow path 3b is formed from a branch point where the sensor pipe 3a branches from the pipe 3 to a junction where the sensor pipe 3a joins the pipe 3, and a hole is formed in the bypass flow path 3b by etching. A bypass (not shown) in which flat plates are stacked is disposed. The pressure loss generated in the material gas passing through the bypass is the same as the pressure loss generated in the material gas passing through the sensor pipe 3a.
A first block body 5 is provided so as to surround the periphery of the pipe 3 provided with the bypass flow path 3b. The first block body 5 is made of a metal having a substantially rectangular parallelepiped shape and excellent in heat conductivity, and has a through-hole for arranging a pipe provided with a bypass channel 3b therein. Is provided.
流量制御装置４は、配管３を流れる材料ガスの流量を測定する流量検出部４ａと、配管３を流れる材料ガスの流量を調整する流量調整部４ｂと、流量検出部４ａの検出結果を用いて流量調整部４ｂを制御する制御部４ｃとを備える。 The flow rate control device 4 uses the flow rate detection unit 4a that measures the flow rate of the material gas flowing through the pipe 3, the flow rate adjustment unit 4b that adjusts the flow rate of the material gas that flows through the pipe 3, and the detection result of the flow rate detection unit 4a. And a control unit 4c for controlling the flow rate adjusting unit 4b.
流量検出部４ａは、センサ用配管３ａの少なくとも一部を加熱するとともに温度に関連する物理量を検知する熱式流量センサ６と、熱式流量センサ６が検知した検知信号を受けて配管３を流れる材料ガスの流量を算出する流量算出部７とを有する。 The flow rate detection unit 4a heats at least a part of the sensor pipe 3a and detects a physical quantity related to temperature and receives a detection signal detected by the thermal type flow sensor 6 and flows through the pipe 3. A flow rate calculation unit 7 for calculating a flow rate of the material gas.
熱式流量センサ６は、センサ用配管３ａを加熱して、センサ用配管３ａの上流側及び下流側の温度に関連する物理量（例えば、電流、電圧、抵抗等）を検知するものである。具体的には、温度変化に伴って電気抵抗値が増減する感熱抵抗体を用いたものであって、センサ用配管３ａの上流側にコイル状に巻きつけられる上流側センサ６ａと、センサ用配管３ａの下流側にコイル状に巻きつけられる下流側センサ６ｂとを備える。そして、上流側センサ６ａ及び下流側センサ６ｂに電流が流れることによって、上流側センサ６ａ及び下流側センサ６ｂが発熱し、センサ用配管３ａを加熱するものである。 The thermal flow sensor 6 heats the sensor pipe 3a and detects a physical quantity (for example, current, voltage, resistance, etc.) related to the upstream and downstream temperatures of the sensor pipe 3a. Specifically, an upstream sensor 6a wound in a coil shape around the upstream side of the sensor pipe 3a, which uses a thermal resistor whose electrical resistance value increases or decreases with a temperature change, and the sensor pipe And a downstream sensor 6b wound in a coil on the downstream side of 3a. And when an electric current flows into the upstream sensor 6a and the downstream sensor 6b, the upstream sensor 6a and the downstream sensor 6b generate heat, and the sensor pipe 3a is heated.
流量算出部７は、具体的には電気回路から構成されるものであって、上流側センサ６ａと下流側センサ６ｂの温度が、常に等しく一定となるように制御する制御回路と、制御回路の出力した電気信号を増幅する増幅回路と、この増幅回路で増幅された電気信号を流量に補正する補正回路とを有する。
なお、この流量算出部７は、熱式流量センサ６の熱が伝達しないように、例えば熱式流量センサ６とケーブルを介して接続されていたり、熱式流量センサ６とは異なるケーシングに収容される等して、熱式流量センサ６とは隔離して配置されている。
The flow rate calculation unit 7 is specifically composed of an electric circuit, and includes a control circuit that controls the temperature of the upstream sensor 6a and the downstream sensor 6b to be always equal and constant, It has an amplifier circuit that amplifies the output electric signal, and a correction circuit that corrects the electric signal amplified by the amplifier circuit to a flow rate.
The flow rate calculation unit 7 is connected to the thermal flow rate sensor 6 via a cable, for example, or accommodated in a casing different from the thermal flow rate sensor 6 so that the heat of the thermal flow rate sensor 6 is not transmitted. For example, the thermal flow sensor 6 is disposed separately.
配管３から分岐したセンサ用配管３ａに材料ガスが流れていない場合、上流側センサ６ａ及び下流側センサ６ｂをそれぞれ制御する制御回路から流れる電流値と、上流側センサ６ａと下流側センサ６ｂの抵抗値は同じであるので、上流側センサ６ａ及び下流側センサ６ｂの温度は等しく一定となる。
また、上流側センサ６ａが検知した電気信号（電圧値）と、下流側センサ６ｂが検知した電気信号（電圧値）とは同じものとなる。
When the material gas does not flow into the sensor pipe 3a branched from the pipe 3, the current value flowing from the control circuit that controls the upstream sensor 6a and the downstream sensor 6b, and the resistance of the upstream sensor 6a and the downstream sensor 6b, respectively. Since the values are the same, the temperatures of the upstream sensor 6a and the downstream sensor 6b are equally constant.
The electrical signal (voltage value) detected by the upstream sensor 6a is the same as the electrical signal (voltage value) detected by the downstream sensor 6b.
一方、配管３から分岐したセンサ用配管３ａに材料ガスが流れると、この材料ガスによって上流側センサ６ａの熱量が奪われるので上流側センサ６ａの抵抗値が下がる。そのため、上流側センサ６ａを制御する制御回路は、上流側センサ６ａと下流側センサ６ｂの温度を一定に保つために、上流側センサ６ａに流れる電流値を大きくする。 On the other hand, when the material gas flows into the sensor pipe 3a branched from the pipe 3, the amount of heat of the upstream sensor 6a is taken away by the material gas, so that the resistance value of the upstream sensor 6a decreases. Therefore, the control circuit that controls the upstream sensor 6a increases the value of the current flowing through the upstream sensor 6a in order to keep the temperature of the upstream sensor 6a and the downstream sensor 6b constant.
すると、上流側センサ６ａが検知した電気信号（電圧値）と、下流側センサ６ｂが検知した電気信号（電圧値）とはそれぞれ異なるものとなる。増幅回路はこれら電気信号の偏差を増幅する。そして、補正回路は、この増幅された偏差、及び、センサ用流路とバイパス流路３ｂとを流れる材料ガスの分流比を用いて配管３を流れる材料ガスの流量を算出する。 Then, the electrical signal (voltage value) detected by the upstream sensor 6a is different from the electrical signal (voltage value) detected by the downstream sensor 6b. The amplifier circuit amplifies the deviation of these electric signals. Then, the correction circuit calculates the flow rate of the material gas flowing through the pipe 3 using the amplified deviation and the diversion ratio of the material gas flowing through the sensor flow path and the bypass flow path 3b.
制御部４ｃは、構造的には、ＣＰＵ、内部メモリ、Ｉ／Ｏバッファ回路、ＡＤコンバータ等を有した所謂コンピュータ回路である。そして、内部メモリの所定領域に格納したプログラムに従って動作することで情報処理を行い、流量調整部４ｂを制御するものである。 The control unit 4c is structurally a so-called computer circuit including a CPU, an internal memory, an I / O buffer circuit, an AD converter, and the like. Information processing is performed by operating according to a program stored in a predetermined area of the internal memory, and the flow rate adjusting unit 4b is controlled.
具体的には、流量検出部４ａが検出した材料ガスの流量を受信し、この検出流量と予め定めた設定流量とを比較して、検出流量を測定流量に近づけるように流量調整部４ｂに制御信号を送信するものである。 Specifically, the flow rate of the material gas detected by the flow rate detection unit 4a is received, the detected flow rate is compared with a predetermined set flow rate, and the flow rate adjustment unit 4b is controlled so as to bring the detected flow rate closer to the measured flow rate. A signal is transmitted.
流量調整部４ｂは、本実施形態において流量検出部４ａの上流に配置されるものであって、配管３に外付けされる第２ブロック体９と、配管３を流れる材料ガスの流量を調整する調整バルブ１０と、制御部４ｃから送信された制御信号を所定の駆動信号に変換し、この駆動信号を調整バルブ１０へと送る駆動回路１１とを備える。 The flow rate adjusting unit 4b is arranged upstream of the flow rate detecting unit 4a in the present embodiment, and adjusts the flow rate of the second block body 9 externally attached to the pipe 3 and the material gas flowing through the pipe 3. The adjustment valve 10 includes a drive circuit 11 that converts a control signal transmitted from the control unit 4 c into a predetermined drive signal and sends the drive signal to the adjustment valve 10.
第２ブロック体９は、第１ブロック体５と同様に概略直方体形状をなす熱伝導性に優れた金属で構成されるものであって、その内部に配管３を通すための貫通孔が設けられている。
この第２ブロック体９の配管３が挿入される上流側端部が、配管３に接続される接続部１５となる。
The 2nd block body 9 is comprised with the metal excellent in the heat conductivity which makes a substantially rectangular parallelepiped shape similarly to the 1st block body 5, Comprising: The through-hole for letting the piping 3 pass is provided in the inside. ing.
The upstream end portion into which the pipe 3 of the second block body 9 is inserted becomes a connection portion 15 connected to the pipe 3.
調整バルブ１０は、第２ブロック体９の内部に配置された配管３の管内を塞ぐように配置されるバルブ本体１０ａと、このバルブ本体１０ａを機械的に駆動させる駆動手段１０ｂとを有する。この駆動手段１０ｂとしては、例えばピエゾアクチュエータ等の圧電素子が用いられる。 The adjustment valve 10 includes a valve main body 10a arranged so as to close the inside of the pipe 3 arranged inside the second block body 9, and a driving means 10b for mechanically driving the valve main body 10a. As this driving means 10b, for example, a piezoelectric element such as a piezoelectric actuator is used.
駆動回路１１は、制御部４ｃから送信された制御信号を所定の駆動信号に変換して、この駆動信号により駆動手段１０ｂを駆動させるものである。例えば駆動手段１０ｂに圧電素子が用いられる場合、制御信号は所定の電圧値（駆動信号）に変換される。この駆動回路１１から駆動信号を受けた駆動手段１０ｂは、バルブ本体１０ａの開度を変動させて、流量検出部４ａよりも上流の配管３を流れる材料ガスの流量を調整する。
なお、この駆動回路１１は、例えば調整バルブ１０とケーブルを介して接続されていたり、調整バルブ１０とは異なるケーシングに収容される等して、調整バルブ１０とは隔離して配置されている。
The drive circuit 11 converts the control signal transmitted from the control unit 4c into a predetermined drive signal, and drives the drive means 10b with this drive signal. For example, when a piezoelectric element is used for the drive means 10b, the control signal is converted into a predetermined voltage value (drive signal). The drive means 10b that has received the drive signal from the drive circuit 11 adjusts the flow rate of the material gas flowing through the pipe 3 upstream of the flow rate detection unit 4a by changing the opening degree of the valve body 10a.
The drive circuit 11 is arranged separately from the adjustment valve 10, for example, connected to the adjustment valve 10 via a cable or housed in a casing different from the adjustment valve 10.
上述したように構成した本実施形態の加熱気化システム１の加熱気化方法について説明する。 The heating vaporization method of the heating vaporization system 1 of this embodiment comprised as mentioned above is demonstrated.
ユーザは、液体材料を気化した材料ガスを半導体製造チャンバ等に使用する場合、導入配管２ｃからタンク２ａに液体材料を導入し、加熱器２ｂでタンク２ａを加熱する。すると、タンク２ａ内の温度が上昇して液体材料が飽和蒸気圧に達して気化し、材料ガスが生成される。 When using a material gas obtained by vaporizing a liquid material in a semiconductor manufacturing chamber or the like, the user introduces the liquid material into the tank 2a from the introduction pipe 2c and heats the tank 2a with the heater 2b. Then, the temperature in the tank 2a rises, the liquid material reaches the saturated vapor pressure, and is vaporized, and a material gas is generated.
この材料ガスは、導出配管２ｄを介して配管３を流れて半導体製造チャンバ等に供給される。このとき、配管３を流れる材料ガスの一部はセンサ用配管３ａを流れる。 This material gas flows through the piping 3 via the outlet piping 2d and is supplied to the semiconductor manufacturing chamber or the like. At this time, part of the material gas flowing through the pipe 3 flows through the sensor pipe 3a.
センサ用配管３ａに材料ガスが流れると、センサ用配管３ａに設けられた上流側センサ６ａの温度が下がり、上流側センサ６ａ及び下流側センサ６ｂを同じ温度に保持するには、上流側センサ６ａの電気抵抗値を大きくする必要が生じ、上流側センサ６ａと下流側センサ６ｂの電気抵抗値に違いが生じる。流量算出部７は、この電気抵抗値の違いに基づく電気信号（電圧値）から増幅回路及び補正回路を用いて流量を算出する。これにより、流量検出部４ａは配管３を流れる材料ガスの流量を検出して、この検出流量を制御部４ｃへ送信する。 When the material gas flows through the sensor pipe 3a, the temperature of the upstream sensor 6a provided in the sensor pipe 3a decreases, and in order to keep the upstream sensor 6a and the downstream sensor 6b at the same temperature, the upstream sensor 6a The electrical resistance value of the upstream side sensor 6a and the downstream side sensor 6b is different. The flow rate calculation unit 7 calculates the flow rate from the electrical signal (voltage value) based on the difference in the electrical resistance value by using an amplifier circuit and a correction circuit. Thereby, the flow rate detection unit 4a detects the flow rate of the material gas flowing through the pipe 3, and transmits this detected flow rate to the control unit 4c.
制御部４ｃは、検出流量を受けて、この検出流量と予め定めた設定流量とを比較して、検出流量を測定流量に近づけるように流量調整部４ｂに制御信号を送信する。 The control unit 4c receives the detected flow rate, compares the detected flow rate with a predetermined set flow rate, and transmits a control signal to the flow rate adjusting unit 4b so that the detected flow rate approaches the measured flow rate.
流量調整部４ｂは、制御部４ｃから送信された制御信号を所定の駆動信号に変換して、この駆動信号により駆動手段１０ｂを駆動させてバルブ本体１０ａの開閉を行い、流量検出部４ａよりも上流の配管３を流れる材料ガスの流量を調整する。 The flow rate adjusting unit 4b converts the control signal transmitted from the control unit 4c into a predetermined drive signal, drives the drive means 10b with this drive signal to open and close the valve body 10a, and is more than the flow rate detection unit 4a. The flow rate of the material gas flowing through the upstream pipe 3 is adjusted.
＜第１実施形態の効果＞
以上のように構成した第１実施形態の加熱気化システム１によれば、流量検出部４ａを流量調整部４ｂの下流側に設けたので、圧力損失を考慮して流量調整部４ｂの温度を予め上げておく場合に、流量検出部４ａの温度を流量調整部４ｂの温度以上に上げる必要がない。そのため、流量検出部４ａの温度を上げることによる流量検出部４ａの劣化や材料ガスの劣化等の悪影響を防ぐとともに、流量調整部４ｂの圧力損失に起因する配管３内の結露を防いで、半導体製造チャンバ等に材料ガスを安定供給することができる。
<Effects of First Embodiment>
According to the heating and vaporizing system 1 of the first embodiment configured as described above, since the flow rate detecting unit 4a is provided on the downstream side of the flow rate adjusting unit 4b, the temperature of the flow rate adjusting unit 4b is set in advance in consideration of pressure loss. In the case of increasing the temperature, it is not necessary to raise the temperature of the flow rate detection unit 4a to be higher than the temperature of the flow rate adjustment unit 4b. Therefore, it is possible to prevent adverse effects such as deterioration of the flow rate detection unit 4a and deterioration of material gas caused by raising the temperature of the flow rate detection unit 4a, and prevent condensation in the pipe 3 due to pressure loss of the flow rate adjustment unit 4b. A material gas can be stably supplied to a manufacturing chamber or the like.
＜第２実施形態＞
次に本発明に係る加熱気化システムの第２実施形態について説明する。第２実施形態にかかる加熱気化システム２０では、流量検出部４ａ及び流量調整部４ｂに加熱手段が設けられている点が第１実施形態とは異なる。
なお、第１実施形態と同様の構成については同じ符号を付し、説明を省略する。
<Second Embodiment>
Next, a second embodiment of the heating and vaporizing system according to the present invention will be described. The heating vaporization system 20 according to the second embodiment differs from the first embodiment in that heating means are provided in the flow rate detection unit 4a and the flow rate adjustment unit 4b.
In addition, the same code | symbol is attached | subjected about the structure similar to 1st Embodiment, and description is abbreviate | omitted.
第２実施形態に係る加熱気化システム２０は、図２に示すように、第１ブロック体５に内蔵されるとともに、センサ用配管３ａの上流及び下流に位置する配管３の外側周面に配置されて、第１ブロック体５を貫通する配管３内を流れる材料ガスを加熱するための第１加熱手段１２（１２ａ、１２ｂ）を備える。 As shown in FIG. 2, the heating and vaporizing system 20 according to the second embodiment is built in the first block body 5 and disposed on the outer peripheral surface of the pipe 3 positioned upstream and downstream of the sensor pipe 3 a. The first heating means 12 (12a, 12b) for heating the material gas flowing in the pipe 3 penetrating the first block body 5 is provided.
さらに、第２実施形態に係る加熱気化システム２０は、第２ブロック体９に内蔵されるとともに、バルブ本体１０ａの上流及び下流に位置する配管３の外側周面に配置されて、第２ブロック体９を貫通する配管３内を流れる材料ガスを加熱するための第２加熱手段１３（１３ａ、１３ｂ）を備える。 Furthermore, the heating and vaporizing system 20 according to the second embodiment is incorporated in the second block body 9 and is disposed on the outer peripheral surface of the pipe 3 located upstream and downstream of the valve body 10a, so that the second block body is provided. 2 is provided with second heating means 13 (13a, 13b) for heating the material gas flowing in the pipe 3 passing through 9.
この第１加熱手段１２又は第２加熱手段１３としては、例えばヒータ等が用いられる。第１ブロック体５又は第２ブロック体９はともに熱伝導性のよい金属で構成されているので、ヒータの熱は効率よく配管３に伝達し、配管３を流れる材料ガスを加熱する。 As this 1st heating means 12 or the 2nd heating means 13, a heater etc. are used, for example. Since both the first block body 5 and the second block body 9 are made of a metal having good thermal conductivity, the heat of the heater is efficiently transmitted to the pipe 3 and the material gas flowing through the pipe 3 is heated.
＜第２実施形態の効果＞
以上のように構成した第２実施形態の加熱気化システム２０によれば、流量検出部４ａ及び流量調整部４ｂにおいて、第１加熱手段１２及び第２加熱手段１３をそれぞれ設けたので、圧力損失を見越して結露が生じないように流量調整部４ｂの温度を予め上げておくことや、流量検出部４ａの温度を材料ガスが再度液化しない温度に維持することができ、配管３内で結露が発生することを確実に防ぐことができる。
<Effects of Second Embodiment>
According to the heating and vaporizing system 20 of the second embodiment configured as described above, the first heating unit 12 and the second heating unit 13 are provided in the flow rate detection unit 4a and the flow rate adjustment unit 4b, respectively. In anticipation, the temperature of the flow rate adjustment unit 4b can be raised in advance so that condensation does not occur, or the temperature of the flow rate detection unit 4a can be maintained at a temperature at which the material gas does not liquefy again. Can be surely prevented.
また、第１ブロック体５を第１加熱手段１２で加熱して、第１ブロック体５を貫通する配管３内を流れる材料ガスの温度を、加熱部８で加熱されたセンサ用配管３ａの温度に近づけると、該センサ用配管３ａの温度と材料ガスの温度との温度差に基づく熱式流量センサ６の検出誤差を防いで、流量検出部４ａの検出精度を高めることができる。 Further, the temperature of the material gas flowing in the pipe 3 penetrating the first block body 5 by heating the first block body 5 by the first heating means 12 is the temperature of the sensor pipe 3 a heated by the heating unit 8. If it is close to, the detection error of the thermal flow sensor 6 based on the temperature difference between the temperature of the sensor pipe 3a and the temperature of the material gas can be prevented, and the detection accuracy of the flow rate detector 4a can be improved.
＜第３実施形態＞
次に本発明に係る加熱気化システムの第３実施形態について説明する。第３実施形態にかかる加熱気化システム３０では、流量検出部４ａ及び流量調整部４ｂに加熱手段を具備する点に加えて、流量検出部４ａと流量調整部４ｂとの間に内部加熱手段をさらに具備する点が第１実施形態とは異なる。
なお、第１実施形態及び第２実施形態と同様の構成については同じ符号を付し、説明を省略する。
<Third Embodiment>
Next, a third embodiment of the heating vaporization system according to the present invention will be described. In the heating vaporization system 30 according to the third embodiment, in addition to the point that the flow rate detection unit 4a and the flow rate adjustment unit 4b are provided with heating means, an internal heating unit is further provided between the flow rate detection unit 4a and the flow rate adjustment unit 4b. The point which comprises differs from 1st Embodiment.
In addition, the same code | symbol is attached | subjected about the structure similar to 1st Embodiment and 2nd Embodiment, and description is abbreviate | omitted.
第３実施形態に係る加熱気化システム３０は、図３に示すように、バルブ本体１０ａよりも下流であって、流量検出部４ａよりも上流に位置する配管３の内部に設けられ、この配管３を流れる材料ガスの温度を均一にするための内部加熱手段１４をさらに備える。 As shown in FIG. 3, the heating and vaporizing system 30 according to the third embodiment is provided inside a pipe 3 that is downstream of the valve body 10 a and upstream of the flow rate detection unit 4 a. The internal heating means 14 is further provided for making the temperature of the material gas flowing through the air uniform.
内部加熱手段１４は、配管３の内部に配置される加熱部材と、この金属部材に熱を供給する熱供給装置（図示しない）とから構成され、加熱部材は、図４に示すように、その外側周面が配管３の内側周面に沿うように構成された中空の金属円筒の中に複数の金属細線がメッシュ状に張りめぐらされている。そして、熱供給装置が配管３の内部に配置される加熱部材に熱を供給すると、この加熱部材を通過した材料ガスは、金属円筒や金属細線に接触することで均一に加熱される。 The internal heating means 14 is composed of a heating member disposed inside the pipe 3 and a heat supply device (not shown) for supplying heat to the metal member, and the heating member, as shown in FIG. A plurality of fine metal wires are stretched in a mesh shape in a hollow metal cylinder configured such that the outer peripheral surface is along the inner peripheral surface of the pipe 3. And if a heat supply apparatus supplies heat to the heating member arrange | positioned inside the piping 3, the material gas which passed this heating member will be heated uniformly by contacting a metal cylinder or a thin metal wire.
＜第３実施形態の効果＞
以上のように構成した第３実施形態の加熱気化システム３０によれば、内部加熱手段１４は配管３の内部に設けられるので、配管３の外部に設けられた第１加熱手段１２及び第２加熱手段１３よりも効率よく熱を材料ガスに伝達することができる。そのため、内部加熱手段１４を通過した材料ガスは均一に加熱され、加熱ムラに起因する流量検出部４ａの検出精度の低下を防ぐことができる。
また、内部加熱手段１４をメッシュ状に構成することで、内部加熱手段１４の上流側と下流側との間で圧力損失が発生することを防ぐことができる。
<Effect of the third embodiment>
According to the heating vaporization system 30 of the third embodiment configured as described above, since the internal heating means 14 is provided inside the pipe 3, the first heating means 12 and the second heating means provided outside the pipe 3 are used. Heat can be transferred to the material gas more efficiently than the means 13. Therefore, the material gas that has passed through the internal heating means 14 is uniformly heated, and a reduction in detection accuracy of the flow rate detection unit 4a due to heating unevenness can be prevented.
Moreover, it can prevent that a pressure loss generate | occur | produces between the upstream and downstream of the internal heating means 14 by comprising the internal heating means 14 in mesh shape.
なお、本発明は上記実施形態に限定されたものではない。 In addition, this invention is not limited to the said embodiment.
上記実施形態では、材料として液体材料を用いたが、例えば固体材料を気化してもよい。 In the above-described embodiment, a liquid material is used as a material. However, for example, a solid material may be vaporized.
上記実施形態では、流量制御装置において、流量調整部と流量検出部を別体としているが、例えば流量調整部のバルブ本体が配置された配管及び迂回配管が設けられた配管を同一のブロック体で覆って、流量調整部と流量検出部とを一体に構成したものであってもよい。 In the above embodiment, in the flow control device, the flow rate adjustment unit and the flow rate detection unit are separated, but, for example, the pipe in which the valve body of the flow rate adjustment unit is arranged and the pipe in which the bypass pipe is provided are the same block body. The flow rate adjustment unit and the flow rate detection unit may be configured integrally.
また、上記実施形態では、流量検出部において、上流側センサ及び下流側センサがセンサ用配管を加熱するものであるが、別途センサ用配管を加熱するヒータ等を配置して、このヒータの上流及び下流に配置される一対のセンサで温度を検知するように構成してもよい。この場合、流量算出部は、これらセンサが検知した温度差から流量を算出する。 In the above embodiment, in the flow rate detection unit, the upstream sensor and the downstream sensor heat the sensor pipe. However, a heater or the like for heating the sensor pipe is separately arranged, and the upstream and You may comprise so that temperature may be detected with a pair of sensor arrange | positioned downstream. In this case, the flow rate calculation unit calculates the flow rate from the temperature difference detected by these sensors.
加えて、上記実施形態ではセンサ用流路としてセンサ用配管が設けられているが、センサ用配管を設けずに、配管をセンサ用流路として加熱して、該配管を流れる材料ガスの流量を検出してもよい。 In addition, in the above embodiment, the sensor pipe is provided as the sensor flow path. However, without providing the sensor pipe, the pipe is heated as the sensor flow path, and the flow rate of the material gas flowing through the pipe is increased. It may be detected.
さらに、上記実施形態では、流量調整部において、駆動手段がピエゾアクチュエータ等の圧電素子を用いたものであったが、ソレノイドアクチュエータやサーマルアクチュエータ等、バルブ本体を物理的に駆動させるものであれば特に限定されずに何でも用いることができる。 Furthermore, in the above embodiment, in the flow rate adjustment unit, the driving means uses a piezoelectric element such as a piezo actuator. However, especially if the valve body is physically driven, such as a solenoid actuator or a thermal actuator. Anything can be used without limitation.
第１加熱手段や第２加熱手段は、いずれか一方のみが設置されていてもよいし、上記実施形態のように両方が設置されていてもよい。
また、前記実施形態のように、流量検出部の第１ブロック体及び流量調整部の第２ブロック体に内蔵されたものではなく、流量検出部及び流量調整部に外付けされたものでもよい。
さらに流量検出部及び流量調整部の上流側又は下流側のいずれか一方に設置されたものでもよい。
Only one of the first heating means and the second heating means may be installed, or both may be installed as in the above embodiment.
Moreover, it is not built in the 1st block body of a flow volume detection part, and the 2nd block body of a flow volume adjustment part like the said embodiment, The thing attached externally to the flow volume detection part and the flow volume adjustment part may be used.
Further, it may be installed on either the upstream side or the downstream side of the flow rate detection unit and the flow rate adjustment unit.
内部加熱手段は、流量調整部におけるバルブ本体の上流に位置する配管内に設けられていてもよい。 The internal heating means may be provided in a pipe located upstream of the valve body in the flow rate adjusting unit.
その他、本発明は前記実施形態に限られず、その趣旨を逸脱しない範囲で種々の変形が可能である。 In addition, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.
１・・・加熱気化システム
２・・・容器
３・・・配管
４ａ・・・流量検出部
４ｂ・・・流量調整部
４ｃ・・・制御部
８・・・加熱部
１０ａ・・・バルブ本体
１２、１３・・・加熱手段
１４・・・内部加熱手段
DESCRIPTION OF SYMBOLS 1 ... Heating vaporization system 2 ... Container 3 ... Piping 4a ... Flow rate detection part 4b ... Flow rate adjustment part 4c ... Control part 8 ... Heating part 10a ... Valve body 12 13 heating means 14 internal heating means
Claims (4)
前記容器に接続され、前記容器内で生成された前記材料ガスを導出する配管と、
前記配管に設けられたセンサ用流路と、
前記センサ用流路に設けられた熱式流量センサを具備し、該熱式流量センサを用いて前記配管を流れる前記材料ガスの流量を測定する流量検出部と、
前記容器の下流であって前記流量検出部の上流に設けられるとともに、前記配管を流れる前記材料ガスの流量を調整する流量調整部と、
前記流量検出部の測定結果を用いて、前記流量調整部を制御する制御部とを備える加熱気化システム。 A container containing the material and heating and vaporizing the material to generate a material gas;
A pipe connected to the container and leading out the material gas generated in the container;
A sensor flow path provided in the pipe;
A flow rate detector that includes a thermal flow sensor provided in the sensor flow path, and that measures the flow rate of the material gas flowing through the pipe using the thermal flow sensor;
Rutotomoni provided a downstream of the container upstream of the flow detector, the flow rate adjusting unit that adjusts the flow rate of the material gas flowing through the pipe,
A heating vaporization system comprising: a control unit that controls the flow rate adjusting unit using a measurement result of the flow rate detecting unit.
前記配管にセンサ用流路を設けて、このセンサ用流路に設けた熱式流量センサを用いて前記配管を流れる材料ガスの流量を流量検出部が測定し、
前記流量検出部の測定結果を用いて、前記容器の下流であって前記流量検出部の上流に設けられる流量調整部で、前記配管を流れる前記材料ガスの流量を調整する加熱気化方法。
The liquid material stored in the container is heated and vaporized to generate a material gas, and the material gas is led to a pipe connected to the container,
A flow path for a sensor is provided in the pipe, and a flow rate detector measures the flow rate of the material gas flowing through the pipe using a thermal flow sensor provided in the flow path for the sensor.
The measurement result of the flow rate detection unit and according to the flow rate adjusting unit that is provided upstream of the flow rate detecting unit to a downstream of the container, heated and vaporized method for adjusting the flow rate of the material gas flowing through the pipe.
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| CN201410218730.9A CN104213100B (en) | 2013-05-30 | 2014-05-22 | Heat carburetion system and heating gasification method |
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| JP7154850B2 (en) * | 2017-09-19 | 2022-10-18 | 株式会社堀場エステック | Concentration control device and material gas supply device |
| KR102607020B1 (en) * | 2017-09-19 | 2023-11-29 | 가부시키가이샤 호리바 에스텍 | Concentration control apparatus and material gas supply system |
| JP7421318B2 (en) * | 2019-11-27 | 2024-01-24 | 株式会社堀場エステック | Liquid material vaporization device, method of controlling the liquid material vaporization device, and program for the liquid material vaporization device |
| JP7344944B2 (en) * | 2021-09-24 | 2023-09-14 | 株式会社Kokusai Electric | Gas supply system, substrate processing equipment, semiconductor device manufacturing method and program |
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