JP5534191B2 - BiTi-based oxide target containing Bi4Ti3O12 phase and method for producing the same - Google Patents

Description

The present invention relates to a BiTi-based oxide target including a Bi ₄ Ti ₃ O ₁₂ phase, which is a BiTi-based composite oxide, and a method for producing the same.

  In recent years, with the improvement of the picture quality of photographs and moving images, digital data when recording on an optical recording medium or the like has increased, and there has been a demand for an increase in the capacity of the recording medium. Blu-ray Disc (registered trademark) having a capacity of 50 GB depending on the system is on the market. The Blu-ray Disc (registered trademark) is desired to have a higher capacity in the future, and research on increasing the capacity by increasing the number of recording layers has been actively conducted.

In order to realize such an optical recording medium in which a plurality of recording layers are laminated, it is necessary to make the recording layers semi-transparent in order to allow laser light to reach all the recording layers. Therefore, it has been reported that a film of a mixture of TiO ₂ and Bi ₂ O ₃ is provided as a transparent high refractive index film between each of a plurality of recording layers (see Patent Document 1).

On the other hand, a Bi ₄ Ti ₃ O ₁₂ film is known as a dielectric film for a ferroelectric memory. As a target for forming this Bi ₄ Ti ₃ O ₁₂ film by sputtering, for example, Patent Document 2 discloses a mixed powder of Bi ₂ O ₃ powder, TiO ₂ powder and Ti powder in vacuum at 1300 ° C. A target produced by firing for 2 hours has been proposed. Patent Document 3 proposes a BiTi target prepared by mixing and firing Ti powder and Bi powder, and sputtering this target in an oxygen-containing atmosphere to produce Bi ₄ Ti ₃ O _12. A film is formed.

JP 2008-97794 A (paragraph number 0013) JP-A-7-166340 (paragraph numbers 0014, 0037) JP 2007-63653 A

The following problems remain in the conventional technology.
That is, in the conventional target described in Patent Document 2 for forming the Bi ₄ Ti ₃ O ₁₂ film, a mixed powder of Bi ₂ O ₃ powder, TiO ₂ powder and Ti powder is molded into a disk target shape, and vacuum Since it was baked inside, Bi ₂ O ₃ in the molded body was reduced and eluted as Bi, and the target sometimes cracked during removal.
In addition, the target composed of Bi powder and Ti powder described in Patent Document 3 is molded at 270 ° C. or lower where Bi does not dissolve, so that although it is consolidated, diffusion between both metals is insufficient and sputtering is in progress. It sometimes cracked.

The present invention has been made in view of the above-mentioned problems. A BiTi-based oxide target including a Bi ₄ Ti ₃ O ₁₂ phase capable of sputtering with a stable film composition, which is less likely to cause abnormal discharge at high density, and its An object is to provide a manufacturing method.

As a result of research on the BiTi-based oxide target, the inventors of the present invention have made Bi ₄ which is a composite oxide into a powder before sintering obtained by pre-calcining a raw material powder composed of element powder within a predetermined temperature range. By containing the Ti ₃ O ₁₂ phase as a main phase, it is composed of a Bi ₄ Ti ₃ O ₁₂ phase as a composite oxide that could not be obtained conventionally, or contains a Bi ₄ Ti ₃ O ₁₂ phase as a main phase. It has been found that a density target can be formed.

Therefore, the present invention has been obtained from the above findings, and the following configuration has been adopted in order to solve the above problems. That is, the BiTi-based oxide target of the present invention contains Bi and Ti as metal components constituting the target at an atomic ratio of Bi: Ti = 6: x (3 <x <7), and Bi ₄ Ti ₃ consisting O ₁₂ phase, or characterized by comprising an oxide containing a _Bi 4 _Ti 3 _{O 12} phase.
This BiTi based oxide target made of _Bi 4 _Ti 3 _{O 12} phase as a composite oxide, or because an oxide containing a _Bi 4 _Ti 3 _{O 12} phase, by sputtering this target, abnormal discharge A BiTi-based oxide film that hardly occurs and has a stable composition can be formed.

In addition, the BiTi-based oxide target of the present invention has an intensity of the diffraction peak due to the (110) plane of the TiO ₂ phase by X-ray diffraction of 8 that is the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase. Less than 6%, or the intensity of the diffraction peak due to the (013) plane of the Bi ₂ O ₃ phase is less than 72.4% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase. Features.

In this BiTi-based oxide target, the intensity of the diffraction peak due to the (110) plane of the TiO ₂ phase is less than 8.6% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase by X-ray diffraction. Or the intensity of the diffraction peak due to the (013) plane of the Bi ₂ O ₃ phase is less than 72.4% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase, so Bi ₄ Ti ₃ It has a high-density structure in which the main phase is an O ₁₂ phase or a Bi ₄ Ti ₃ O ₁₂ phase.

Note that the ratio of the atomic ratio of Bi: Ti = 6: x (3 <x <7) was set, and the intensity of the diffraction peak due to the (110) plane of the TiO ₂ phase was changed to that of the Bi ₄ Ti ₃ O ₁₂ phase ( 171) The reason why the intensity of the diffraction peak due to the plane is less than 8.6% and the intensity of the diffraction peak due to the (013) plane of the Bi ₂ O ₃ phase are the diffraction peaks due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase. The reason why it is less than 72.4% of the strength of the steel is that if it is out of the above range, the number of vacancies in the target will increase and the density will decrease, and a phase of metal Bi, TiO ₂ or Bi ₂ O ₃ will be included. As a result, abnormal discharge increases.

  In the method for producing a BiTi-based oxide target of the present invention, Bi and Ti as metal components constituting the target are oxidized with Bi being measured at an atomic ratio of Bi: Ti = 6: x (3 <x <7). Pulverizing and mixing the product and Ti oxide, producing a mixed powder, calcining the mixed powder at a temperature of 600 to 800 ° C. for 1 to 20 hours to obtain a calcined powder, and the calcined powder And heating and sintering while applying pressure in a vacuum or an inert gas atmosphere.

That is, in this method of manufacturing a BiTi-based oxide target, a step of pulverizing and mixing Bi oxide and Ti oxide weighed at the above atomic ratio to produce a mixed powder; And calcining at 800 ° C. for 1 to 20 hours to obtain a calcined powder. Therefore, it is composed of Bi ₄ Ti ₃ O ₁₂ phase as a composite oxide by calcination in advance, or Bi ₄ Ti ₃ by sintering the calcined powder containing O ₁₂ phase, it is possible to produce a target having a high density tissue as a main phase of Bi ₄ Ti ₃ O ₁₂ phase is a composite oxide.

The reason why the content ratio of Bi and Ti is set in the above range is that Bi: Ti = 6: x (x ≦ 3, 7 ≦ x), the number of voids increases in the target and the density decreases. This is because abnormal discharge increases as a result of containing many phases of metal Bi, TiO ₂ or Bi ₂ O ₃ .
The reason for setting the calcining temperature within the above range is that the reaction to the composite oxide is insufficient if it is less than 600 ° C, and if it exceeds 800 ° C, a metal is used during sintering such as hot pressing. This is because Bi phase melts out and a high-density structure cannot be obtained.

  In addition, the BiTi-based oxide target of the present invention is produced by the above-described method for manufacturing a BiTi-based oxide target of the present invention.

The present invention has the following effects.
That is, according to the BiTi-based oxide target according to the present invention, Bi and Ti as metal components are contained at an atomic ratio of Bi: Ti = 6: x (3 <x <7), and Bi ₄ Ti ₃ Since it is made of an oxide having an O ₁₂ phase or a Bi ₄ Ti ₃ O ₁₂ phase as a main phase, the occurrence of abnormal discharge can be suppressed, and a stable film forming operation can be performed.
In the BiTi-based oxide target manufacturing method of the present invention, Bi and Ti as metal components constituting the target are weighed at an atomic ratio of Bi: Ti = 6: x (3 <x <7). And a step of pulverizing and mixing the oxide of Ti and an oxide of Ti to prepare a mixed powder, and a step of calcining the mixed powder at a temperature of 600 to 800 ° C. to obtain a calcined powder. Therefore, the target of the present invention having a high-density structure in which the main phase is Bi ₄ Ti ₃ O ₁₂ phase or Bi ₄ Ti ₃ O ₁₂ phase, which is a composite oxide, can be produced.
Therefore, by forming a BiTi film by sputtering using the BiTi oxide target of the present invention, a film suitable for a transparent high refractive index film provided between the recording layers of an optical recording medium having a high recording capacity can be obtained. Can do.

It is a figure which shows the secondary electron image (SEI) and reflected electron image (COMP) by the scanning electron microscope of the structure | tissue of the BiTi type oxide target which concerns on this invention. In the Example which concerns on this invention, it is a figure which shows the element distribution mapping image by an electron beam microanalyzer (EPMA). It is the structure | tissue of the target except the calcination process as the comparative example 1 of the BiTi type oxide target which concerns on this invention, and is a figure which shows the secondary electron image and reflected electron image by a scanning electron microscope. In the comparative example 1 which concerns on this invention, it is a figure which shows the element distribution mapping image by EPMA. It is a structure | tissue of the target of the comparative example 2 which concerns on this invention, and makes atomic ratio of a metal component Bi: Ti = 6: 7, It is a figure which shows the secondary electron image and reflected electron image by a scanning electron microscope. In the comparative example 2 which concerns on this invention, it is a figure which shows the element distribution mapping image by EPMA. It is a structure | tissue of the target of the comparative example 3 which concerns on this invention, and makes atomic ratio of a metal component Bi: Ti = 6: 3, and is a figure which shows the secondary electron image and reflected electron image by a scanning electron microscope. In the comparative example 3 which concerns on this invention, it is a figure which shows the element distribution mapping image by EPMA. It is a graph which shows the X-ray-diffraction (XRD) result of the target of the Example which concerns on this invention. It is a graph which shows the X-ray-diffraction (XRD) result of the target of the comparative example 1 which concerns on this invention. It is a graph which shows the X-ray-diffraction (XRD) result of the target of the comparative example 2 which concerns on this invention. It is a graph which shows the X-ray-diffraction (XRD) result of the target of the comparative example 3 which concerns on this invention.

  Hereinafter, an embodiment of a BiTi-based oxide target and a manufacturing method thereof according to the present invention will be described.

The BiTi-based oxide target of this embodiment contains Bi and Ti as metal components constituting the target at an atomic ratio of Bi: Ti = 6: x (3 <x <7), and Bi ₄ Ti ₃ O. _{It is} composed of ₁₂ phases or an oxide containing a Bi ₄ Ti ₃ O ₁₂ phase as a main phase. Further, the intensity of the diffraction peak due to the (110) plane of the TiO ₂ phase is less than 8.6% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase by X-ray diffraction, or Bi ₂ O ₃ The intensity of the diffraction peak due to the (013) plane of the phase is less than 72.4% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase.
The content ratio of Bi and Ti is further preferably Bi: Ti = 6: x (4 ≦ x ≦ 5).

  In this BiTi-based oxide target manufacturing method, Bi and Ti as metal components constituting the target are measured at an atomic ratio of Bi: Ti = 6: x (3 <x <7). A step of pulverizing and mixing Ti oxide to prepare a mixed powder, a step of calcining the mixed powder at a temperature of 600 to 800 ° C. for 1 to 20 hours to form a calcined powder, and vacuuming the calcined powder Or a step of performing hot pressing or the like for heating and sintering while applying pressure in an inert gas atmosphere.

If an example of the said manufacturing method is explained in full detail, for example, first, bismuth oxide (chemical formula: Bi ₂ O ₃ , purity: 3N, average particle size: 21 μm), titanium oxide (chemical formula: TiO ₂ , purity: 3N, average particle size: 3 μm) is weighed so that the atomic ratio of the metal components is Bi: Ti = 6: 4.5. Next, the weighed powder and 3 times its amount (weight ratio) zirconia balls (diameter 5 mm) are put in a plastic container and wet mixed in a ball mill apparatus for 18 hours to produce a mixed powder. In addition, alcohol is used for the solvent in this case, for example.

Next, after drying the obtained mixed powder, for example, it is passed through a sieve having an opening of 500 μm to remove zirconia balls, and then calcined in the air at 700 ° C. for 5 hours to prepare a calcined powder. At this time, a composite oxide is formed in the mixed powder by calcination. Furthermore, this calcined powder and 5 times amount (weight ratio) of zirconia balls (diameter 5 mm) are put in a plastic container and crushed for 24 hours with a ball mill device to obtain crushed powder. In addition, alcohol is used for the solvent in this case, for example.
Next, the obtained crushed powder is dried and then passed through a sieve having an opening of 500 μm to remove zirconia balls. Thereafter, the pulverized powder is filled into a graphite mold and, for example, vacuum hot pressed at a pressure of 350 kgf / cm ² at 850 ° C. for 3 hours to obtain a target.
The hot pressing is preferably performed at 550 to 1150 ° C. for 1 to 10 hours at a pressure of 100 to 600 kgf / cm ^{2 in} a vacuum or an inert gas atmosphere.

In BiTi based oxide target of the present embodiment thus produced, the Bi and Ti contained in the above atomic _ratio, comprising of Bi ₄ Ti _{3 O 12} phase, or _Bi 4 _Ti 3 _{O 12} phase as a main phase Since it consists of the oxide which contains, it is hard to generate | occur | produce abnormal discharge and can form the BiTi-type oxide film of the stable composition by sputtering with this target.
In particular, in the target of the present invention, the intensity of the diffraction peak due to the (110) plane of the TiO ₂ phase is less than 8.6% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase by X-ray diffraction. Alternatively, since the intensity of the diffraction peak due to the (013) plane of the Bi ₂ O ₃ phase is less than 72.4% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase, Bi ₄ Ti ₃ O _It has a high-density structure with ₁₂ phases or Bi ₄ Ti ₃ O ₁₂ phases as the main phase.

  FIG. 1 and FIG. 2 show the results of evaluation using a scanning electron microscope and EPMA for the examples of BiTi-based oxide targets actually produced based on the present embodiment.

In addition, as a comparative example 1, the above evaluation was similarly performed on a target manufactured by removing the calcination step from the present embodiment. The results are shown in FIGS.
Moreover, the said evaluation was similarly performed about the target produced as the comparative example 2 by making atomic ratio of a metal component Bi: Ti = 6: 7. The results are shown in FIG. 5 and FIG.
Further, as Comparative Example 3, the results of the above-described evaluation for a target manufactured with the atomic ratio of metal components being Bi: Ti = 6: 3 are shown in FIGS.

  In the target of this example, as can be seen from the secondary electron image by the scanning electron microscope shown in FIGS. 1 and 2, the reflected electron image, and the element distribution mapping image by EPMA, the target has few vacancies, and the metal component Bi and Ti are very uniformly dispersed. On the other hand, in Comparative Example 1, as can be seen from FIG. 3, many irregularities are observed on the sample surface. This suggests that there are many vacancies in the sample. In Comparative Example 1, as can be seen from FIG. 4, a structure considered to be metal bismuth generated by reduction during hot pressing and unreacted titanium oxide is observed.

Further, in Comparative Example 2, as can be seen from FIG. 5, unevenness was observed on the sample surface than in the above Example and Comparative Example 1, and as can be seen from FIG. 6, the metal bismuth produced by reduction during hot pressing and A structure considered to be unreacted titanium oxide has been observed.
Further, in Comparative Example 3, as can be seen from FIG. 7, a larger number of irregularities are observed on the sample surface than in the above Example and Comparative Example 1, and as can be seen from FIG. 8, metal bismuth produced by reduction and unreacted The structure considered to be bismuth oxide has been observed.

Next, FIG. 9 shows the result of evaluation by XRD of the BiTi-based oxide target of the present example. In addition, the target of Comparative Examples 1 to 3 was similarly evaluated by XRD. The results are shown in FIGS.
The measurement conditions of X-ray diffraction are as follows.
Preparation of sample: The sample was wet-polished with SiC-Paper (grit 180) and dried, and then used as a measurement sample.
Equipment: Rigaku Electric (RINT-Ultima / PC)
Tube: Cu
Tube voltage: 40 kV
Tube current: 40 mA
Scanning range (2θ): 5 ° to 90 °
Slit size: Divergence (DS) 2/3 degree, Scattering (SS) 2/3 degree, Light reception (RS) 0.8mm
Measurement step width: 0.02 degrees at 2θ Scan speed: 2 degrees per minute Sample stage rotation speed: 30 rpm

In the target of this example, as shown in FIG. 9, only the diffraction peak attributed to Bi ₄ Ti ₃ O ₁₂ (PDF No. 35-0795) was observed. As a result, it is in good agreement with the result of the structure observation by EPMA, and the target of this example is considered to be a Bi ₄ Ti ₃ O ₁₂ single phase. In contrast, in Comparative Example 1, as shown in FIG. 10, in addition to the diffraction peak attributed to Bi ₄ Ti ₃ O ₁₂ , TiO ₂ (PDF No. 88-1172), Bi (PDF No. 85-1331). ) Is observed. This result is in good agreement with the results of tissue observation by EPMA.

In Comparative Example 2, as shown in FIG. 11, peaks considered to be TiO ₂ and Bi are observed in addition to the diffraction peaks attributed to Bi ₄ Ti ₃ O ₁₂ . This result is in good agreement with the results of tissue observation by EPMA. Further, the intensity (2θ = 27.6 °) of the diffraction peak due to the (110) plane of the TiO ₂ phase is 8 which is the peak intensity (2θ = 30.1 °) due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase. It was 6%.

Furthermore, in Comparative Example 3, as shown in FIG. 12, in addition to the diffraction peak attributed to Bi ₄ Ti ₃ O ₁₂ , a peak considered to be Bi ₂ O ₃ (PDF No. 74-1375) is observed. . This result is in good agreement with the results of tissue observation by EPMA. Further, the peak (2θ = 28.0 °) intensity of the Bi ₂ O ₃ phase due to the (013) plane was 72.4% of the peak intensity due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase.
As described above, the present example has a high-density structure composed of a single phase of Bi ₄ Ti ₃ O ₁₂ , whereas Comparative Examples 1 to 3 have many vacancies and metal Bi, Bi _2. The structure includes a phase such as O ₃ or TiO ₂ .

Next, Table 1 shows the target density ratio and the presence / absence of the formation of metal Bi when the target is produced by changing the calcining temperature, the holding time, and the hot press temperature.
This calcination step is composed of a temperature raising, holding, and cooling process, and the holding time is a time for holding the temperature from the point of time when the temperature rises to a predetermined temperature. Therefore, in Table 1, when the holding time is set to 0 h (hours), the cooling is performed immediately after reaching the predetermined temperature.

As shown in Table 1, when hot pressing was performed without performing calcination, a target having a high density and no metal deposition could not be produced. Further, when the calcining temperature was 500 ° C., the metal Bi melted out in the target after hot pressing even when the holding time was 30 hours. This is because the raw material reaction is not sufficient at the calcining temperature of 500 ° C., and the Bi ₄ Ti ₃ O ₁₂ phase is not sufficiently formed, so that unreacted Bi ₂ O ₃ is reduced during hot pressing to produce metal Bi. However, it is thought that the melting occurred. Furthermore, when the calcining temperature was 600 to 800 ° C., the reaction of the raw material sufficiently progressed to form a Bi ₄ Ti ₃ O ₁₂ phase, and a target with high density and no formation of metal Bi was obtained by hot pressing. On the other hand, when the calcining temperature was set to 900 ° C. or higher, the reaction of the raw material proceeded excessively, and conversely, the melting accompanying the generation of metal Bi occurred, and as a result, a high-density target was not obtained.

  Next, sputtering was actually performed using the targets of the present invention and comparative examples, and the resulting sputtered films were evaluated.

First, the target of this example processed to φ125 mm was bonded to a backing plate made of oxygen-free copper using indium, and mounted on a sputtering apparatus to perform a film formation test. During film formation, after evacuating to an ultimate vacuum pressure of 7 × 10 ⁻⁴ Pa, argon gas: 50 sccm and oxygen gas: 1.5 sccm are supplied, the total pressure of the gas is set to 1 Pa, and a high frequency power source is used. 500 W was applied.

Table 2 shows that the atomic ratio of Bi and Ti of the metal components constituting the target is Bi: Ti = 6: x (2 ≦ x ≦ 8), and both are calcining temperature: 700 ° C., holding time: 5 hours, hot press Temperature: 850 ° C., hot press holding time: 3 hours, when the target was sputtered for 1 hour under the aforementioned sputtering conditions, the number of abnormal discharges, the (110) plane of TiO ₂ phase at each target The ratio of the diffraction peak (2θ = 27.6 °) intensity of the Bi ₄ Ti ₃ O ₁₂ phase to the (171) plane (2θ = 30.1 °) intensity of the Bi ₄ Ti ₃ O ₁₂ phase, and the Bi ₂ O ₃ phase ( The ratio between the peak (2θ = 28.0 °) intensity due to the (013) plane and the peak intensity due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase is shown. The number of abnormal discharges was measured visually.

From the results of Table 2, in order to suppress abnormal discharge, the TiO ₂ phase constituting the target has a peak intensity ratio of less than 8.6% with respect to the peak intensity in XRD of the Bi ₄ Ti ₃ O ₁₂ phase, as a more preferable range. It can be seen that the peak intensity ratio is 4.4% or less, and more preferably, the peak intensity ratio is 1.3% or less.
Further, the preferable range of the Bi ₂ O ₃ phase is less than 72.4% of the peak intensity ratio with respect to the peak intensity in the XRD of the Bi ₄ Ti ₃ O ₁₂ phase, and the more preferable range is 50.1% or less, more preferable It can be seen that the range is preferably a peak intensity ratio of 26.5% or less.
Next, the film formation rate of Example 4 with Bi: Ti = 6: 4.5 was 0.88 nm / sec. A film having a thickness of 100 nm was formed under the above-described sputtering conditions, and a refractive index with respect to a wavelength of 405 nm and an extinction coefficient indicating the degree of light absorption were measured.

  As a result, the obtained sputtered film had a refractive index n = 2.82 and an extinction coefficient k = 0.001. Thus, since the obtained film has a sufficiently small extinction coefficient, it has high transparency at a wavelength of 405 nm and also exhibits a large refractive index. Thus, the sputtered film formed using the target of this example has characteristics suitable for a high refractive index film provided on an optical recording medium having a high recording capacity using a blue laser.

The technical scope of the present invention is not limited to the above-described embodiments and examples, and various modifications can be made without departing from the spirit of the present invention.
For example, in the above embodiment and the above examples, the calcined powder is hot-pressed and sintered. However, as another sintering method, the HIP method (hot isostatic pressing method) is adopted. It doesn't matter.

Claims (3)

The atomic ratio of Bi and Ti as the metal component, Bi: Ti = 6: x (3 <x <7) der is,
According to the X-ray diffraction of the target, the intensity of the diffraction peak due to the (110) plane of the TiO ₂ phase is less than 8.6% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase, or Bi ₂ O ₃ The intensity of the diffraction peak due to the (013) plane of the phase is less than 72.4% of the intensity of the diffraction peak due to the (171) plane of the Bi ₄ Ti ₃ O ₁₂ phase;
A BiTi-based oxide target containing a Bi ₄ Ti ₃ O ₁₂ phase , wherein the density ratio is 96.5% or more . Bi powder and Ti oxide weighed so that the atomic ratio of Bi and Ti as a metal component is Bi: Ti = 6: x (3 <x <7) are pulverized and mixed to produce a mixed powder. And a process of
A step of calcining the mixed powder at a temperature of 600 to 700 ° C. for 5 to 20 hours to obtain a calcined powder;
A step of sintering the calcined powder by a hot press that heats the calcined powder to 800 to 850 ° C. while applying pressure in a vacuum or an inert gas atmosphere, and has a Bi ₄ Ti ₃ O ₁₂ phase The manufacturing method of the BiTi-type oxide target containing this. A BiTi-based oxide target containing a Bi ₄ Ti ₃ O ₁₂ phase, which is produced by the production method according to claim 2 .