JP5530830B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof.

  Some conventional semiconductor devices include a sealing resin that seals an electronic component mounted on a substrate, and a shield layer that protects the electronic component from electromagnetic waves on the sealing resin (for example, Patent Documents). 1 and 2).

Here, FIG. 13 is a schematic perspective view showing a conventional semiconductor device.
As shown in FIG. 13, the semiconductor device includes a substrate 31, an electronic component (not shown), a sealing resin 32, and a shield layer 33.

  The sealing resin 32 is formed on the substrate 31 so as to seal the electronic component mounted on the substrate 31. The sealing resin 32 is a member for protecting the electronic component from an external impact or the like.

  The shield layer 33 is formed so as to cover the entire upper surface of the sealing resin 32. By providing such a shield layer 33, electromagnetic waves from the outside are blocked, and the electronic component can be protected from the electromagnetic waves.

Japanese Patent Laid-Open No. 2001-24312 Japanese Patent No. 3842229

  By the way, since the sealing resin 32 has a smooth surface, when the shield layer 33 is a conductive film formed by a sputtering method or the like, the adhesion between the shield layer 33 and the sealing resin 32 may be deteriorated. is there. In such a case, there is a problem that the sealing resin 32 swells due to, for example, outgas generated from the sealing resin 32 during reflow heating of the solder or water vapor due to moisture absorption, or the shield layer 33 is peeled off from the sealing resin 32. Occur.

  The present invention has been made to solve the above problems, and an object of the present invention is to provide a semiconductor device capable of suppressing the occurrence of problems due to outgas generated from a sealing resin, and a method for manufacturing the same. There is to do.

According to one aspect of the present invention, a substrate, an electronic component mounted on the substrate, a sealing resin formed on the substrate by sealing the electronic component, and a part of the sealing resin to cover includes a shield layer having an opening of a first predetermined pattern in a plan view, wherein the sealing resin has a recess in the second predetermined pattern in a plan view on one side, the recess the formed in a mesh shape or a lattice shape in the second viewed as a predetermined pattern, wherein the shield layer is formed in the recess, that is formed in a mesh shape or a lattice shape in a plan view.

  According to this configuration, part of the sealing resin is exposed at the opening of the shield layer. Since part of the sealing resin is exposed in this manner, even if outgas or moisture is generated from the sealing resin during solder reflow heating, the outgas or water vapor is released from the exposed part. be able to. Thereby, generation | occurrence | production of the problem resulting from outgas and water vapor | steam can be suppressed suitably.

According to one aspect of the present invention, there is provided a semiconductor device manufacturing method including a substrate, an electronic component mounted on the substrate, and a sealing resin that seals the electronic component. A shield layer forming step of forming a shield layer having an opening of a first predetermined pattern in plan view so as to cover the portion, and the shield layer forming step includes the first predetermined surface on one surface of the sealing resin. forming a recess in the convex portion and the second predetermined pattern of the pattern, and forming the shielding layer in the recess, only including the step of forming the shield layer in the recess, the projection a step of the one side of the sealing resin section and the recess is formed is coated with a metal layer, to expose the convex portion of the sealing resin and polishing the metal layer, the including.

  According to this method, a part of the sealing resin is exposed at the opening of the shield layer formed so as to cover a part of the sealing resin. Since part of the sealing resin is exposed in this manner, even if outgas or moisture is generated from the sealing resin during solder reflow heating, the outgas or water vapor is released from the exposed part. be able to. Thereby, generation | occurrence | production of the problem resulting from outgas and water vapor | steam can be suppressed suitably.

  According to one aspect of the present invention, it is possible to provide a semiconductor device and a method for manufacturing the semiconductor device that can suppress the occurrence of problems caused by outgas or the like generated from a sealing resin.

(A) is a schematic plan view which shows the semiconductor device of 1st Embodiment, (b), (c) is a schematic sectional drawing which shows the semiconductor device of 1st Embodiment. 1 is a schematic perspective view showing a part of a semiconductor device according to a first embodiment. The schematic plan view which shows a multi-piece wiring board. (A)-(c) is a schematic sectional drawing which shows the manufacturing method of the semiconductor device of 1st Embodiment. (A)-(c) is a schematic sectional drawing which shows the manufacturing method of the semiconductor device of 1st Embodiment. FIG. 6 is a schematic cross-sectional view showing a semiconductor device according to a second embodiment. (A), (b) is a schematic sectional drawing which shows the manufacturing method of the semiconductor device of 2nd Embodiment. (A)-(c) is a schematic sectional drawing which shows the manufacturing method of the semiconductor device of 2nd Embodiment. FIG. 6 is a schematic cross-sectional view showing a modified semiconductor device. (A) is a schematic sectional drawing which shows the manufacturing method of the semiconductor device of a modification, (b)-(d) is an expanded sectional view which shows the manufacturing method of the semiconductor device of a modification. (A) is a schematic plan view showing a semiconductor device of a modification, and (b) is a schematic cross-sectional view showing a semiconductor device of a modification. (A), (b) is a schematic plan view which shows the semiconductor device of a modification. The schematic perspective view which shows the conventional semiconductor device.

Hereinafter, each embodiment will be described with reference to the accompanying drawings. Note that the attached drawings are for explaining the outline of the structure and do not represent the actual size.
(First embodiment)
Hereinafter, a first embodiment will be described with reference to FIGS. 1A is a schematic plan view of the semiconductor device 10 of the present embodiment, and FIG. 1B is a schematic cross-sectional view taken along line AA of the semiconductor device 10 shown in FIG. FIG. 1C is a schematic cross-sectional view taken along line BB of the semiconductor device 10 shown in FIG. FIG. 2 is a schematic perspective view showing a part of the semiconductor device 10.

As shown in FIGS. 1B and 1C, the semiconductor device 10 includes a substrate 11, an electronic component 12, a sealing resin 13, and a shield layer 14.
The board 11 is for electrically connecting the electronic component 12 and another board (not shown) such as a mother boat. As the substrate 11, for example, a printed wiring board can be used.

The electronic component 12 is mounted on the substrate 11. As the electronic component 12, for example, a semiconductor chip, a chip resistor, a chip capacitor, a crystal resonator, or the like can be used.
The sealing resin 13 is provided on the substrate 11 so as to seal the electronic component 12. The upper surface of the sealing resin 13 is formed in an uneven shape. Specifically, a mesh-shaped (second predetermined pattern) recess 13 a is formed on the upper surface of the sealing resin 13 in plan view. In other words, the upper surface of the sealing resin 13 is formed with convex portions 13b in a matrix (first predetermined pattern) in plan view. In addition, as this sealing resin 13, a mold resin can be used, for example. As the mold resin, for example, an epoxy mold resin formed by a transfer mold method can be used.

  The shield layer 14 is formed in the recess 13a of the sealing resin 13 as shown in FIGS. 1 (b), 1 (c) and FIG. Specifically, the shield layer 14 is formed so as to cover the inner wall of the recess 13 a of the sealing resin 13. For this reason, as shown in FIG. 1A, the shield layer 14 is formed in a lattice shape in plan view. Further, it can be said that such a shield layer 14 has openings of a predetermined pattern in a plan view, that is, openings (here, matrix-like openings) 14a having the same pattern as the pattern of the protrusions 13b. That is, the shield layer 14 is not formed on the convex portion 13b of the sealing resin 13, and the upper surface of the sealing resin 13 is exposed at the convex portion 13b. As described above, since the upper surface is exposed at a part of the sealing resin 13 (the convex portion 13b), even if water vapor is generated from the sealing resin 13 due to outgas or moisture absorption during solder reflow heating, The outgas and water vapor can be released to the outside from the exposed convex portion 13b.

Here, FIG. 3 is a plan view of a multi-piece wiring board 30 on which a large number of semiconductor devices 10 of this embodiment are formed.
As shown in FIG. 3, the multi-cavity wiring board 30 has a large number of semiconductor device formation regions C that are regions where the semiconductor device 10 is formed. In the semiconductor device formation region C, the substrate 11 is formed. Further, the multi-piece wiring board 30 is cut by a dicing blade along the dicing position D after the structure corresponding to the semiconductor device 10 is formed. As a result, the structure corresponding to the semiconductor device 10 is singulated and a large number of semiconductor devices 10 are manufactured. For example, glass epoxy can be used as the material of the multi-cavity wiring board 30.

Next, a method for manufacturing the semiconductor device 10 will be described with reference to FIGS.
As shown in FIG. 4A, the electronic component 12 is mounted on the substrate 11 formed in the semiconductor device formation region C. Next, as illustrated in FIG. 4B, a sealing resin 13 is formed on the substrate 11 so as to cover the electronic component 12. The thickness of the sealing resin 13 can be set to 1 mm, for example.

  Subsequently, as illustrated in FIG. 4C, a lattice-shaped recess 13 a is formed on the upper surface of the sealing resin 13 in plan view. The recess 13a can be formed by, for example, a dicing blade, a laser, a drill, or the like. In addition, the depth W1 of the recessed part 13a can be 50 micrometers-100 micrometers, for example, the width W2 of the recessed part 13a can be 100 micrometers, and the pitch W3 of the adjacent recessed part 13a can be 200 micrometers, for example. Further, by forming the concave portion 13 a, a matrix-shaped convex portion 13 b is formed on the upper surface of the sealing resin 13.

  Next, as shown in FIG. 5A, a conductive layer 15 is formed on the entire upper surface side of the sealing resin 13 including the inner wall of the recess 13a. The conductive layer 15 can be formed by, for example, sputtering, vacuum deposition, or plating. In addition, when using a sputtering method or a vacuum evaporation method, as a material of the conductive layer 15, for example, aluminum (Al) can be used. Moreover, when using a plating method, as a material of the conductive layer 15, for example, copper (Cu) can be used.

  Subsequently, as shown in FIG. 5B, the upper surface side of the sealing resin 13 is polished or ground. Specifically, the conductive layer 15 formed on the upper surface of the convex portion 13b is removed by polishing or grinding, thereby exposing the upper surface of the convex portion 13b (sealing resin 13). That is, in this step, the upper surface side of the sealing resin 13 is polished or ground until the upper surface of the convex portion 13b is exposed. As a result, a grid-like shield layer 14 in a plan view covering the inner wall of the recess 13a of the sealing resin 13, that is, a shield layer 14 having a matrix-like opening 14a in a plan view is formed. In addition, as said grinding | polishing, buffing etc. can be used, for example. In this polishing step (grinding step), in addition to the conductive layer 15 formed on the upper surface of the convex portion 13b, a part of the shield layer 14 and a part of the sealing resin 13 are simultaneously polished or ground. Also good.

  Then, a structure corresponding to the semiconductor device 10 is formed in a large number of semiconductor device formation regions C by the above manufacturing process. In the present embodiment, the process shown in FIGS. 4C, 5A, and 5B is a shield layer forming process.

  Next, the structure shown in FIG. 5B is cut along the dicing position D as shown in FIG. As a result, the semiconductor device 10 is singulated and a large number of semiconductor devices 10 are manufactured.

According to this embodiment described above, the following effects can be obtained.
(1) The shield layer 14 having a predetermined pattern of openings 14a is formed on the upper surface of the sealing resin 13. In the opening portion 14a of the shield layer 14, the upper surface of the convex portion 13b of the sealing resin 13 is exposed. As described above, since the upper surface is exposed at a part of the sealing resin 13 (the convex portion 13b), even if water vapor is generated from the sealing resin 13 due to outgas or moisture absorption during solder reflow heating, Outgas and water vapor can be released from the exposed convex portion 13b. Thereby, generation | occurrence | production of the problem resulting from outgas and water vapor | steam can be suppressed suitably.

  (2) The shield layer 14 is formed in the recess 13 a of the sealing resin 13. Thereby, for example, compared with the conventional case where the shield layer 33 is formed on the upper surface of the sealing resin 32, an increase in the height of the entire semiconductor device 10 due to the formation of the shield layer 14 can be suppressed.

  (3) Further, when the shield layer 33 is formed on the upper surface of the sealing resin 32 because the adhesion between the shield layer 33 and the sealing resin 32 is poor as in the prior art, mechanical external force is applied to the shield layer 33. When added, the shield layer 33 is easily peeled off, which causes a problem of metallic foreign matter (floating matter). On the other hand, in this embodiment, since the shield layer 14 is formed in the recessed part 13a of the sealing resin 13, the shield layer 14 can be suitably protected from mechanical external force.

(Second Embodiment)
Hereinafter, the second embodiment will be described with reference to FIGS. The same members as those shown in FIGS. 1 to 5 are denoted by the same reference numerals, and detailed description of these elements is omitted.

As shown in FIG. 6, the semiconductor device 10 a includes a substrate 11, an electronic component 12, a sealing resin 13, a shield layer 14, and a ground terminal 16.
The ground terminal 16 is a conductor having a ground potential, and is provided on the substrate 11. The ground terminal 16 is electrically connected to the shield layer 14 formed in a lattice shape in plan view. For example, a prismatic or cylindrical metal post or a solder ball can be used for the ground terminal 16.

  The sealing resin 13 is provided on the substrate 11 so as to seal the electronic component 12 and the ground terminal 16. On the upper surface of the sealing resin 13, a lattice-shaped concave portion 13 a in a plan view and a matrix-shaped convex portion 13 b in a plan view are formed. Here, the concave portion 13a (the concave portion 13c located on the leftmost side and the concave portion 13d located on the rightmost side in FIG. 6) facing the ground terminal 16 is formed so as to expose the upper surface of the ground terminal 16.

  The shield layer 14 is formed so as to cover the inner wall of the recess 13 a of the sealing resin 13. For this reason, the shield layer 14 formed in the recesses 13 c and 13 d facing the ground terminal 16 is electrically connected to the upper surface of the ground terminal 16. As a result, the shield layer 14 formed in a lattice shape in plan view and the ground terminal 16 are electrically connected, and the shield layer 14 is set to the ground potential. Therefore, the shield layer 14 blocks electromagnetic waves emitted from the electronic component 12 and also blocks electromagnetic waves emitted from other devices existing outside the semiconductor device 10, and the electronic component 12 is adversely affected by the electromagnetic waves. Can be suppressed.

Next, a method for manufacturing the semiconductor device 10a will be described with reference to FIGS.
As shown in FIG. 7A, the ground terminal 16 is formed on the substrate 11 formed in the semiconductor device formation region C. Subsequently, the electronic component 12 is mounted on the substrate 11. Next, a sealing resin 13 is formed on the substrate 11 so as to cover the ground terminal 16 and the electronic component 12. The thickness of the sealing resin 13 can be set to 1 mm, for example. The thickness W4 of the sealing resin 13 on the ground terminal 16 can be set to 100 μm, for example.

  Subsequently, as illustrated in FIG. 7B, a lattice-shaped recess 13 a is formed on the upper surface of the sealing resin 13 in a plan view. At this time, the recesses 13 c and 13 d formed at positions facing the ground terminal 16 are formed as openings that expose the upper surface of the ground terminal 16.

  Next, as shown in FIG. 8A, a conductive layer 15 is formed on the entire upper surface side of the sealing resin 13 including the inner wall of the recess 13a. As a result, the conductive layer 15 formed in the recesses 13 c and 13 d is electrically connected to the upper surface of the ground terminal 16. Before the formation of the conductive layer 15, desmear treatment may be performed on the structure shown in FIG. 7B in order to prevent poor conduction between the conductive layer 15 and the ground terminal 16.

  Subsequently, as shown in FIG. 8B, the conductive layer 15 formed on the upper surface of the convex portion 13b of the sealing resin 13 is removed by polishing or grinding, thereby exposing the upper surface of the convex portion 13b. Thereby, the shield layer 14 which covers the inner wall of the recessed part 13a of the sealing resin 13 is formed. In the present embodiment, the process shown in FIGS. 7B, 8A, and 8B is the shield layer forming process.

  Next, as illustrated in FIG. 8C, the structure illustrated in FIG. 8B is cut along the dicing position D. Thereby, the semiconductor device 10a is singulated and a large number of semiconductor devices 10a are manufactured.

According to the embodiment described above, the following effects are obtained in addition to the effects (1) to (3) of the first embodiment.
(4) The ground terminal 16 is formed on the substrate 11, and the ground terminal 16 and the shield layer 14 are electrically connected through the recesses 13c and 13d. Thereby, for example, the shield layer 14 can be set to the ground potential more easily than the case where the shield layer 14 is electrically connected directly to a part of the grounding wiring of the substrate 11 without providing the ground terminal 16. . That is, the shield layer 14 and the ground terminal 16 can be connected without digging deeply into the recesses 13c and 13d.

(Other embodiments)
In addition, the said embodiment can also be implemented in the following aspects which changed this suitably.
In each of the above embodiments, after the conductive layer 15 is formed so as to cover the entire upper surface of the sealing resin 13, the conductive layer 15 formed on the convex portion 13b is removed, so that the shield layer is formed only in the concave portion 13a. 14 was formed. Not only this but after forming the recessed part 13a in the sealing resin 13, you may make it form the shield layer 14 only in a required part (here recessed part 13a). For example, the shield layer 14 can be formed only in the concave portion 13a by filling only the concave portion 13a with a conductive paste (for example, Cu paste or silver (Ag) paste) by a printing method. In addition, the shield layer 14 can be formed only in the recess 13a by depositing and growing a Cu plating film with a plating resist formed on the projection 13b of the sealing resin 13 by, for example, a semi-additive method. .

  In such a case, the shield layer 14 may be formed on a part of the upper surface of the convex portion 13 b of the sealing resin 13. That is, if a part of the upper surface of the convex portion 13b is exposed and the shield layer 14 having openings of a predetermined pattern is formed in a plan view, the same effect as (1) of the first embodiment can be obtained. it can.

  In each of the above embodiments, the shield layer 14 is formed so as to cover the inner wall of the recess 13 a of the sealing resin 13. For example, as shown in FIG. 9, the shield layer 17 may be formed so as to fill the recess 13 a of the sealing resin 13.

  In each of the above embodiments, the concave surface 13a is formed on the upper surface of the sealing resin 13 with a dicing blade or the like, so that the upper surface of the sealing resin 13 is formed in an uneven shape. For example, as shown in FIG. 10, the surface of the sealing resin 18 may be roughened to form the upper surface of the sealing resin 18 in an uneven shape. As the roughening of the sealing resin 18, for example, a desmear process can be used. When the sealing resin 18 is a resin that is difficult to roughen, for example, a sealing resin that can be roughened is formed on the sealing resin 18, and the top surface of the roughening sealing resin is formed. It may be roughened. If the silica resin is contained in the sealing resin 18, the surface of the sealing resin 18 may be roughened by dissolving the silica filler in an aqueous hydrogen fluoride solution. Good.

  When the upper surface of the sealing resin 18 is thus roughened, a shield layer is formed on the roughened surface (roughened surface) 18a by the manufacturing method shown in FIGS. 10 (b) to 10 (d). Can do. In addition, FIG.10 (b)-(d) is an expanded sectional view which expanded the broken-line area | region R of Fig.10 (a).

  FIG. 10B shows a state in which the roughened surface 18 a is formed on the upper surface of the sealing resin 18. At this time, the roughened surface 18a has a concave portion 18b and a convex portion 18c. Although not shown, the recess 18b is formed in a mesh shape in plan view. Next, as shown in FIG. 10C, a thin conductive layer 19a is formed so as to cover the roughened surface 18a. Subsequently, as shown in FIG. 10D, the upper surface side of the sealing resin 18 is thinly polished to expose the upper surface of the convex portion 18c. Thereby, the mesh-like shield layer 19 can be formed in a plan view so as to cover the inner wall of the recess 18b.

  In each of the above embodiments, the sealing resin 13 whose one side surface (upper surface) is a smooth surface is formed. For example, when a molding resin formed by a transfer molding method is used as the sealing resin 13, when the resin is molded into a mold shape, a seal having a concave portion and a convex portion on one side surface (upper surface) is used. A stop resin may be formed. That is, a sealing resin having a concave portion and a convex portion on the upper surface may be formed depending on the shape of the mold.

  -You may make it form the shield layer 20 which covers the side surface of the sealing resin 13 as FIG. 11 (a), (b) shows. As shown in FIG. 11A, the shield layer 20 is electrically connected to the shield layer 14 formed in a lattice shape in plan view. Further, as shown in FIG. 11B, the shield layer 20 is electrically connected to a ground terminal 21 formed on the substrate 11 and having a ground potential. Thereby, it is possible to block electromagnetic waves entering from the side surface of the sealing resin 13, and it is possible to block electromagnetic waves from the outside with high accuracy.

  In each of the above embodiments, the shield layer 14 having a lattice shape (having a matrix-like opening 14a in plan view) is formed in plan view, but the shape of the shield layer 14 is not particularly limited. That is, the shape of the shield layer 14 is not particularly limited as long as it has a shape having a predetermined pattern of openings in plan view. For example, as shown in FIG. 12A, the shield layer 22 may be formed in a cross shape in a plan view. The shield layer 22 in this case has openings 22 a that expose the sealing resin 13 at the four corners of the sealing resin 13. Further, as shown in FIG. 12B, the shield layer 24 having an opening 24 a that exposes the sealing resin 13 at the center in a plan view and having an annular shape and a belt shape may be formed. Good.

  In each embodiment described above, the shield layer 14 is formed in the recess 13 a of the sealing resin 13. For example, a shield layer having openings of a predetermined pattern in a plan view may be formed on the upper surface of the sealing resin having a smooth upper surface. Even with such a configuration, it is possible to achieve the same effect as (1) of the first embodiment.

DESCRIPTION OF SYMBOLS 10, 10a Semiconductor device 11 Board | substrate 12 Electronic component 13, 18 Sealing resin 13a, 13c, 13d, 18b Concave part 13b, 18c Convex part 14, 17, 19, 22, 24 Shield layer 14a, 22a, 24a Opening part 16 Ground terminal

Claims (5)

A substrate,
Electronic components mounted on the substrate;
Sealing resin formed on the substrate by sealing the electronic component;
A shield layer having openings of a first predetermined pattern in plan view so as to cover a part of the sealing resin;
Including
The sealing resin has a concave portion of a second predetermined pattern in a plan view on one surface,
The concave portion is formed in a mesh shape or a lattice shape in plan view as the second predetermined pattern,
The shield layer is formed in the recess, the semiconductor device characterized that you have been formed in a mesh shape or a lattice shape in a plan view.   The semiconductor device according to claim 1, wherein the shield layer is formed so as to cover an inner wall surface of the recess. Including a ground terminal formed on the substrate;
The sealing resin is formed to seal the electronic component and the ground terminal,
The semiconductor device according to claim 1, wherein at least a part of the recess is formed so as to expose one side surface of the ground terminal. A method for manufacturing a semiconductor device comprising a substrate, an electronic component mounted on the substrate, and a sealing resin for sealing the electronic component,
Including a shield layer forming step of forming a shield layer having openings of a first predetermined pattern in plan view so as to cover a part of the sealing resin;
The shield layer forming step includes
Forming a convex portion of the first predetermined pattern and a concave portion of the second predetermined pattern on one surface of the sealing resin;
Forming the shield layer in the recess,
Only including,
Forming the shield layer in the recess,
Coating one surface side of the sealing resin in which the convex portion and the concave portion are formed with a metal layer;
Polishing the metal layer to expose the convex portions of the sealing resin;
The method of manufacturing a semiconductor device according to claim containing Mukoto a. Before the step of forming the sealing resin , including a step of forming a ground terminal on the substrate,
5. The method of manufacturing a semiconductor device according to claim 4 , wherein the recess is formed so that at least a part thereof exposes one side surface of the ground terminal .

Images