JP5527545B2 - Piezoelectric element and pressure sensor - Google Patents

Piezoelectric element and pressure sensor Download PDF

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JP5527545B2
JP5527545B2 JP2010505849A JP2010505849A JP5527545B2 JP 5527545 B2 JP5527545 B2 JP 5527545B2 JP 2010505849 A JP2010505849 A JP 2010505849A JP 2010505849 A JP2010505849 A JP 2010505849A JP 5527545 B2 JP5527545 B2 JP 5527545B2
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conductive substrate
piezoelectric element
connecting portion
conductive
insulating layer
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JPWO2009119820A1 (en
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正祥 稲垣
守人 秋山
和司 岸
康宣 大石
一雄 土屋
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Kyocera Corp
National Institute of Advanced Industrial Science and Technology AIST
Meiji University
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National Institute of Advanced Industrial Science and Technology AIST
Meiji University
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/16Measuring force or stress, in general using properties of piezoelectric devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/008Transmitting or indicating the displacement of flexible diaphragms using piezoelectric devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/05Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/30Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302Sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/50Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/503Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane orthogonal to the stacking direction, e.g. polygonal or circular in top view

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Description

本発明は、圧電素子及びこれを備えた圧力センサ、並びに圧電素子の製造方法に関する。   The present invention relates to a piezoelectric element, a pressure sensor including the piezoelectric element, and a method for manufacturing the piezoelectric element.

従来から圧力センサの圧力検知用の素子として圧電素子が用いられている。例えば特許文献1には、圧電素子を搭載した圧力センサが開示されている。このような圧電素子は、圧力が加えられるとその圧力に応じた電荷が発生する圧電効果を利用したものである。   Conventionally, a piezoelectric element has been used as an element for pressure detection of a pressure sensor. For example, Patent Document 1 discloses a pressure sensor equipped with a piezoelectric element. Such a piezoelectric element utilizes a piezoelectric effect in which, when a pressure is applied, a charge corresponding to the pressure is generated.

特許文献2には、複数の電極板が1枚のプレートにより形成された圧力センサが開示されている。この圧力センサによれば、各電極間を電気的に接続するための半田付けが不要となり製造工数を軽減できるとされている。   Patent Document 2 discloses a pressure sensor in which a plurality of electrode plates are formed by a single plate. According to this pressure sensor, it is said that soldering for electrically connecting the electrodes is unnecessary, and the number of manufacturing steps can be reduced.

特開平5−164643号公報JP-A-5-164463 特開平4−132917号公報Japanese Unexamined Patent Publication No. 4-132919

ところで、近年、圧電素子の分野においては小型化が要求されるとともにさらなる長期信頼性が求められている。したがって、本発明は、小型化が可能であってかつ長期信頼性に優れた圧電素子及びその製造方法、並びに圧力センサを提供することを目的とする。   Incidentally, in recent years, in the field of piezoelectric elements, miniaturization is required and further long-term reliability is required. Accordingly, an object of the present invention is to provide a piezoelectric element that can be miniaturized and has excellent long-term reliability, a method for manufacturing the same, and a pressure sensor.

本発明に係る第1の圧電素子は、平行に配置された一対の第1導電性基板と、前記一対の第1導電性基板の間に配置され、前記第1導電性基板とは異なる極に接続される第2導電性基板と、前記第1導電性基板と前記第2導電性基板の間にそれぞれ設けられ、かつ前記第1導電性基板と前記第2導電性基板とにそれぞれ接する2つの圧電体層と、前記一対の第1導電性基板を電気的に接続するものであって、一方の前記第1導電性基板の側部から他方の前記第1導電性基板の側部に架け渡された第1連結部と、前記第1連結部の表面に形成された第1絶縁層と、を備えており、前記第1絶縁層が、前記圧電体層と同じ材料からなることを特徴とするものである。 The first piezoelectric element according to the present invention is disposed between a pair of first conductive substrates arranged in parallel and the pair of first conductive substrates, and has a pole different from that of the first conductive substrate. A second conductive substrate to be connected; and two conductive substrates provided between the first conductive substrate and the second conductive substrate, respectively, and in contact with the first conductive substrate and the second conductive substrate, respectively. The piezoelectric layer and the pair of first conductive substrates are electrically connected, and are bridged from one side of the first conductive substrate to the side of the other first conductive substrate. And a first insulating layer formed on a surface of the first connecting portion , wherein the first insulating layer is made of the same material as the piezoelectric layer. To do.

本発明に係る第2の圧電素子は、間隔を置いて対向する複数の第1導電性基板と隣り合う該第1導電性基板間を接続する第1連結部とを備え、前記第1導電性基板と前記第1連結部とが交互に配置された一枚の導電性基板を隣り合う前記第1導電性基板が対向するように前記第1連結部で折り返されてなる第1極構造体と、
それぞれ隣り合う前記第1導電性基板間に設けられているとともに互いに間隔を置いて対向する複数の第2導電性基板と隣り合う該第2導電性基板間を接続する第2連結部とを備え、前記第2導電性基板と前記第2連結部とが交互に配置された一枚の導電性基板を隣り合う前記第2導電性基板が対向するように前記第2連結部で折り返されてなる第2極構造体と、
前記第1導電性基板と前記第2導電性基板の間にそれぞれ設けられ、かつ前記第1導電性基板と前記第2導電性基板とにそれぞれ接する2つの圧電体層と、を備えた圧電素子であって、
前記第1連結部の表面に第1絶縁層が設けられ、前記第2連結部の表面に第2絶縁層が設けられており、前記第2絶縁層が、前記圧電体層と同じ材料からなることを特徴とするものである。
A second piezoelectric element according to the present invention includes a plurality of first conductive substrates opposed to each other with an interval, and a first connecting portion that connects adjacent first conductive substrates, and the first conductive element includes A first polar structure formed by folding back one conductive substrate in which the substrate and the first connection portion are alternately arranged at the first connection portion so that the adjacent first conductive substrate faces each other; ,
A plurality of second conductive substrates provided between the adjacent first conductive substrates and facing each other at an interval, and a second connecting portion connecting the adjacent second conductive substrates. The second conductive substrate and the second connecting portion are alternately folded at the second connecting portion so that the adjacent second conductive substrates face each other. A second pole structure;
A piezoelectric element comprising two piezoelectric layers provided between the first conductive substrate and the second conductive substrate and in contact with the first conductive substrate and the second conductive substrate, respectively. Because
A first insulating layer is provided on the surface of the first connecting portion, a second insulating layer is provided on the surface of the second connecting portion, and the second insulating layer is made of the same material as the piezoelectric layer. It is characterized by this.

本発明に係る第3の圧電素子は、平行に配置された一対の第1導電性基板と、該一対の第1導電性基板の間に配置され、前記第1導電性基板とは異なる極に接続される第2導電性基板と、前記第1導電性基板と前記第2導電性基板の間にそれぞれ設けられ、かつ前記第1導電性基板と前記第2導電性基板とにそれぞれ接する2つの圧電体層と、前記一対の第1導電性基板を電気的に接続するものであって、一方の前記第1導電性基板の側部から他方の前記第1導電性基板の側部に架け渡され、前記第1導電性基板よりも厚みが薄い第1連結部と、を備えており、前記第1連結部は、両端から中央に向かって漸次厚みが薄くなっていることを特徴とするものである。 The third piezoelectric element according to the present invention is disposed between a pair of first conductive substrates arranged in parallel and the pair of first conductive substrates, and has a pole different from that of the first conductive substrate. A second conductive substrate to be connected; and two conductive substrates provided between the first conductive substrate and the second conductive substrate, respectively, and in contact with the first conductive substrate and the second conductive substrate, respectively. The piezoelectric layer and the pair of first conductive substrates are electrically connected, and are bridged from one side of the first conductive substrate to the side of the other first conductive substrate. And a first connecting portion having a thickness smaller than that of the first conductive substrate , wherein the first connecting portion has a thickness that gradually decreases from both ends toward the center. It is.

本発明に係る第4の圧電素子は、間隔を置いて対向する複数の第1導電性基板と隣り合う該第1導電性基板間を接続する第1連結部とを備え、前記第1導電性基板と前記第1連結部とが交互に配置された一枚の導電性基板を隣り合う前記第1導電性基板が対向するように前記第1連結部で折り返されてなる第1極構造体と、
それぞれ隣り合う前記第1導電性基板間に設けられているとともに互いに間隔を置いて対向する複数の第2導電性基板と隣り合う該第2導電性基板間を接続する第2連結部とを備え、前記第2導電性基板と前記第2連結部とが交互に配置された一枚の導電性基板を隣り合う前記第2導電性基板が対向するように前記第2連結部で折り返されてなる第2極構造体と、
前記第1導電性基板と前記第2導電性基板の間にそれぞれ設けられ、かつ前記第1導電性基板と前記第2導電性基板とにそれぞれ接する2つの圧電体層と、を備えた圧電素子であって、
前記第1連結部の厚さは、前記第1導電性基板の厚さより薄く、前記第2連結部の厚さは、前記第2導電性基板の厚さより薄く、前記第2連結部は、両端から中央に向かって漸次厚みが薄くなっていることを特徴とするものである。
A fourth piezoelectric element according to the present invention includes a plurality of first conductive substrates facing each other at intervals and a first connecting portion that connects between the adjacent first conductive substrates, and the first conductive element is provided. A first polar structure formed by folding back one conductive substrate in which the substrate and the first connection portion are alternately arranged at the first connection portion so that the adjacent first conductive substrate faces each other; ,
A plurality of second conductive substrates provided between the adjacent first conductive substrates and facing each other at an interval, and a second connecting portion connecting the adjacent second conductive substrates. The second conductive substrate and the second connecting portion are alternately folded at the second connecting portion so that the adjacent second conductive substrates face each other. A second pole structure;
A piezoelectric element comprising two piezoelectric layers provided between the first conductive substrate and the second conductive substrate and in contact with the first conductive substrate and the second conductive substrate, respectively. Because
The thickness of the first connecting portion is thinner than the thickness of the first conductive substrate, the thickness of the second connection part, the rather thin than the thickness of the second conductive substrate, wherein the second connecting portion, The thickness is gradually reduced from both ends toward the center .

また、本発明の圧力センサは、前記第1〜第4の圧電素子のうちのいずれか1つの圧電素子と、この圧電素子が内部に配置されたハウジングとを備えている。   The pressure sensor according to the present invention includes any one of the first to fourth piezoelectric elements, and a housing in which the piezoelectric element is disposed.

本発明に係る第1又は第2の圧電素子によれば、第1連結部および第2連結部の表面に第1絶縁層および第2絶縁層が形成されているので、圧電素子を小型化して異なる基板同士が近接する場合であっても第1連結部および第2連結部において高い絶縁性を維持することができる。これにより、圧電素子の感度が低下するのを長期にわたり抑制できるので、圧電素子の耐久性を向上させることができる。   According to the first or second piezoelectric element of the present invention, since the first insulating layer and the second insulating layer are formed on the surfaces of the first connecting portion and the second connecting portion, the piezoelectric element can be reduced in size. Even when different substrates are close to each other, high insulation can be maintained in the first connecting portion and the second connecting portion. Thereby, since it can suppress over a long period that the sensitivity of a piezoelectric element falls, durability of a piezoelectric element can be improved.

また、本発明に係る第3又は第4の圧電素子によれば、第1連結部および第2連結部の厚みが第1導電性基板および第2導電性基板よりも薄いので、圧電素子を小型化して連結部の曲率半径が小さい場合であっても第1連結部および第2連結部にクラックが生じるなどの不具合が発生するのを抑制することができる。これにより、圧電素子の感度が低下するのを長期にわたり抑制できるので、圧電素子の耐久性を向上させることができる。   In addition, according to the third or fourth piezoelectric element according to the present invention, the thickness of the first connecting portion and the second connecting portion is thinner than that of the first conductive substrate and the second conductive substrate. Even when the radius of curvature of the connecting portion is small, it is possible to suppress the occurrence of problems such as cracks in the first connecting portion and the second connecting portion. Thereby, since it can suppress over a long period that the sensitivity of a piezoelectric element falls, durability of a piezoelectric element can be improved.

本発明の第1の実施形態に係る圧電素子を示す平面図である。1 is a plan view showing a piezoelectric element according to a first embodiment of the present invention. 図1AのA−A線における断面図である。It is sectional drawing in the AA line of FIG. 1A. 第1の実施形態に係る圧電素子を構成する第1の部材を示す平面図である。It is a top view which shows the 1st member which comprises the piezoelectric element which concerns on 1st Embodiment. 図2AのB−B線における断面図である。It is sectional drawing in the BB line of FIG. 2A. 第1の実施形態に係る圧電素子を構成する第2の部材を示す平面図である。It is a top view which shows the 2nd member which comprises the piezoelectric element which concerns on 1st Embodiment. 図2CのC−C線における断面図である。It is sectional drawing in the CC line of FIG. 2C. 第1の実施形態に係る圧電素子の製造方法における第1工程図である。It is a 1st process drawing in the manufacturing method of the piezoelectric element concerning a 1st embodiment. 第1の実施形態に係る圧電素子の製造方法における第2工程図である。It is a 2nd process figure in the manufacturing method of the piezoelectric element concerning a 1st embodiment. 第1の実施形態に係る圧電素子の製造方法における第3工程図である。It is a 3rd process figure in the manufacturing method of the piezoelectric element which concerns on 1st Embodiment. 第1の実施形態に係る圧電素子の製造方法における第4工程図である。It is a 4th process figure in the manufacturing method of the piezoelectric element concerning a 1st embodiment. 本発明の第2の実施形態に係る圧電素子を示す断面図である。It is sectional drawing which shows the piezoelectric element which concerns on the 2nd Embodiment of this invention. 本発明の第3の実施形態に係る圧電素子を示す断面図である。It is sectional drawing which shows the piezoelectric element which concerns on the 3rd Embodiment of this invention. 本発明の第4の実施形態に係る圧電素子を示す平面図である。It is a top view which shows the piezoelectric element which concerns on the 4th Embodiment of this invention. 第4の実施形態に係る圧電素子を示す正面図である。It is a front view which shows the piezoelectric element which concerns on 4th Embodiment. 図5AのD−D線における断面図である。It is sectional drawing in the DD line of FIG. 5A. 図5AのE−E線における断面図である。It is sectional drawing in the EE line | wire of FIG. 5A. 第4の実施形態に係る圧電素子を構成する第1の部材を示す平面図である。It is a top view which shows the 1st member which comprises the piezoelectric element which concerns on 4th Embodiment. 第4の実施形態に係る圧電素子を構成する第1の部材を示す側面図である。It is a side view which shows the 1st member which comprises the piezoelectric element which concerns on 4th Embodiment. 第4の実施形態に係る圧電素子を構成する第2の部材を示す平面図である。It is a top view which shows the 2nd member which comprises the piezoelectric element which concerns on 4th Embodiment. 第4の実施形態に係る圧電素子を構成する第2の部材を示す側面図である。It is a side view which shows the 2nd member which comprises the piezoelectric element which concerns on 4th Embodiment. 第4の実施形態に係る圧電素子の製造方法における第1工程図である。It is a 1st process drawing in the manufacturing method of the piezoelectric element concerning a 4th embodiment. 第4の実施形態に係る圧電素子の製造方法における第2工程図である。It is a 2nd process figure in the manufacturing method of the piezoelectric element which concerns on 4th Embodiment. 第4の実施形態に係る圧電素子の製造方法における第3工程図である。It is a 3rd process figure in the manufacturing method of the piezoelectric element which concerns on 4th Embodiment. 第4の実施形態に係る圧電素子の製造方法における第4工程図である。It is a 4th process figure in the manufacturing method of the piezoelectric element concerning a 4th embodiment. 本発明の第5の実施形態に係る圧電素子を示す平面図である。It is a top view which shows the piezoelectric element which concerns on the 5th Embodiment of this invention. 図8AのF−F線における断面図である。It is sectional drawing in the FF line of FIG. 8A. 第5の実施形態に係る圧電素子を構成する第1の部材を示す平面図である。It is a top view which shows the 1st member which comprises the piezoelectric element which concerns on 5th Embodiment. 図9AのG−G線における断面図である。It is sectional drawing in the GG line of FIG. 9A. 第5の実施形態に係る圧電素子を構成する第2の部材を示す平面図である。It is a top view which shows the 2nd member which comprises the piezoelectric element which concerns on 5th Embodiment. 図9CのH−H線における断面図である。It is sectional drawing in the HH line of FIG. 9C. 第5の実施形態に係る圧電素子の製造方法における第1工程図である。It is a 1st process drawing in the manufacturing method of the piezoelectric element concerning a 5th embodiment. 第5の実施形態に係る圧電素子の製造方法における第2工程図である。It is a 2nd process figure in the manufacturing method of the piezoelectric element which concerns on 5th Embodiment. 第5の実施形態に係る圧電素子の製造方法における第3工程図である。It is a 3rd process figure in the manufacturing method of the piezoelectric element which concerns on 5th Embodiment. 第5の実施形態に係る圧電素子の製造方法における第4工程図である。It is a 4th process drawing in the manufacturing method of the piezoelectric element concerning a 5th embodiment. 本発明の第6の実施形態に係る圧電素子を示す断面図である。It is sectional drawing which shows the piezoelectric element which concerns on the 6th Embodiment of this invention. 本発明の第7の実施形態に係る圧電素子を示す平面図である。It is a top view which shows the piezoelectric element which concerns on the 7th Embodiment of this invention. 第7の実施形態に係る圧電素子を示す正面図である。It is a front view which shows the piezoelectric element which concerns on 7th Embodiment. 図12AのI−I線における断面図である。It is sectional drawing in the II line | wire of FIG. 12A. 図12AのJ−J線における断面図である。It is sectional drawing in the JJ line of FIG. 12A. 第7の実施形態に係る圧電素子を構成する第1の部材を示す平面図である。It is a top view which shows the 1st member which comprises the piezoelectric element which concerns on 7th Embodiment. 第7の実施形態に係る圧電素子を構成する第1の部材を示す側面図である。It is a side view which shows the 1st member which comprises the piezoelectric element which concerns on 7th Embodiment. 第7の実施形態に係る圧電素子を構成する第2の部材を示す平面図である。It is a top view which shows the 2nd member which comprises the piezoelectric element which concerns on 7th Embodiment. 第7の実施形態に係る圧電素子を構成する第2の部材を示す側面図である。It is a side view which shows the 2nd member which comprises the piezoelectric element which concerns on 7th Embodiment. 第7の実施形態に係る圧電素子の製造方法における第1工程図である。It is a 1st process drawing in the manufacturing method of the piezoelectric element concerning a 7th embodiment. 第7の実施形態に係る圧電素子の製造方法における第2工程図である。It is a 2nd process figure in the manufacturing method of the piezoelectric element which concerns on 7th Embodiment. 第7の実施形態に係る圧電素子の製造方法における第3工程図である。It is a 3rd process figure in the manufacturing method of the piezoelectric element which concerns on 7th Embodiment. 第7の実施形態に係る圧電素子の製造方法における第4工程図である。It is a 4th process figure in the manufacturing method of the piezoelectric element concerning a 7th embodiment. 本発明の第8の実施形態に係る圧電素子における第1の部材の一部を示す側面図である。It is a side view which shows a part of 1st member in the piezoelectric element which concerns on the 8th Embodiment of this invention. 本発明の第9の実施形態に係る圧電素子における第1の部材の一部を示す側面図である。It is a side view which shows a part of 1st member in the piezoelectric element which concerns on the 9th Embodiment of this invention. 本発明の一実施形態に係る圧力センサを示す断面図である。It is sectional drawing which shows the pressure sensor which concerns on one Embodiment of this invention.

符号の説明Explanation of symbols

1,31,201,301,501,601,701 圧電素子
13 第1導電性基板
13a,13b 第1導電性基板の側部
15 第2導電性基板
15a,15b 第2導電性基板の側部
17,27,35,37 圧電体層
19,29,190,290 第1絶縁層
43,49,430,490 第2絶縁層
21,51,53,210 第1導電性基板の第1連結部
33,330 第2導電性基板の第2連結部
25,45 第1の部材
39,47 第2の部材
101 ハウジング
103 受圧面
105 圧力伝達部材
107 固定螺子
1, 31, 201, 301, 501, 601, 701 Piezoelectric element 13 First conductive substrate 13a, 13b Side portion 15 of first conductive substrate Second conductive substrate 15a, 15b Side portion 17 of second conductive substrate 27, 35, 37 Piezoelectric layers 19, 29, 190, 290 First insulating layers 43, 49, 430, 490 Second insulating layers 21, 51, 53, 210 First connecting portion 33 of the first conductive substrate, 330 Second connecting portion 25, 45 of second conductive substrate First member 39, 47 Second member 101 Housing 103 Pressure receiving surface 105 Pressure transmitting member 107 Fixing screw

本発明の実施の形態にかかる圧電素子について図面を参照し詳細に説明する。なお、以下に示す各実施の形態は、本発明を例示するものであって、本発明はこれらに限定されるものではない。また、各図において、共通する部分、部材については同一の符号を付し重複した説明を省略する。   A piezoelectric element according to an embodiment of the present invention will be described in detail with reference to the drawings. In addition, each embodiment shown below illustrates this invention, Comprising: This invention is not limited to these. Moreover, in each figure, about the common part and member, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted.

(第1の実施形態)
本発明の一実施形態にかかる圧電素子について図面を参照して詳細に説明する。図1Aは、本実施形態にかかる圧電素子1を示す平面図であり、図1BはそのA−A線における断面図である。これらの図に示すように、本実施形態にかかる圧電素子1は、平行に配置された一対の第1導電性基板13,13と、その一対の第1導電性基板13,13の間に配置され、第1導電性基板13とは異なる極に接続される第2導電性基板15と、を備えている。第1導電性基板13と第2導電性基板15の間には圧電体層17が配置されている。第2導電性基板15を介して積層方向の両側に隣り合う2つの第1導電性基板13のそれぞれの側部13a,13bは、第1連結部21により電気的に接続されている。第1連結部21は一方の側部13aから他方の側部13bに架け渡されたアーチ状のものである。
(First embodiment)
A piezoelectric element according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1A is a plan view showing the piezoelectric element 1 according to the present embodiment, and FIG. 1B is a cross-sectional view taken along the line AA. As shown in these drawings, the piezoelectric element 1 according to this embodiment is arranged between a pair of first conductive substrates 13 and 13 arranged in parallel and the pair of first conductive substrates 13 and 13. And a second conductive substrate 15 connected to a pole different from that of the first conductive substrate 13. A piezoelectric layer 17 is disposed between the first conductive substrate 13 and the second conductive substrate 15. The side portions 13 a and 13 b of the two first conductive substrates 13 adjacent to both sides in the stacking direction via the second conductive substrate 15 are electrically connected by the first connecting portion 21. The first connecting portion 21 has an arch shape extending from one side portion 13a to the other side portion 13b.

第1連結部21の表面のうち、圧電素子1の側面に面した内表面には第1絶縁層19が形成されている。このように第1連結部21の内表面に第1絶縁層19が形成されているので、第1導電性基板13と第2導電性基板15が短絡するのを抑制できる。その結果、圧電素子1の感度が低下するのを長期にわたり抑制できるので、耐久性が向上する。また、図1Bに示すように、第1連結部21の内表面が第1絶縁層19と空間23を介して第2導電性基板15の側部から離隔していることが好ましく、この空間23により第1導電性基板13と第2導電性基板15の短絡抑制効果をさらに向上させることができる。同様の理由で、第2連結部33(図5D)についても、第2連結部33が接続された第2導電性基板15の間に配置された第1導電性基板13の側部から離隔して形成されていることが好ましい。   A first insulating layer 19 is formed on the inner surface of the surface of the first connecting portion 21 facing the side surface of the piezoelectric element 1. Thus, since the 1st insulating layer 19 is formed in the inner surface of the 1st connection part 21, it can suppress that the 1st conductive substrate 13 and the 2nd conductive substrate 15 short-circuit. As a result, the sensitivity of the piezoelectric element 1 can be suppressed over a long period of time, so that durability is improved. Further, as shown in FIG. 1B, the inner surface of the first connecting portion 21 is preferably separated from the side portion of the second conductive substrate 15 via the first insulating layer 19 and the space 23, and the space 23 Thus, the short-circuit suppressing effect between the first conductive substrate 13 and the second conductive substrate 15 can be further improved. For the same reason, the second connecting portion 33 (FIG. 5D) is also separated from the side portion of the first conductive substrate 13 disposed between the second conductive substrates 15 to which the second connecting portion 33 is connected. It is preferable to be formed.

また、第1絶縁層19の厚みは第1連結部21の厚みよりも薄いことが好ましく、このようにすると、図1Bに示すように第1連結部21が折り返されても、第1絶縁層19にクラックが生じるのを抑制できる。この効果は、第1絶縁層19が特にセラミックスからなるときに顕著となる。同様の理由で、第2絶縁層49(図5D)の厚みは第2連結部33の厚みよりも薄いことが好ましい。また、第1絶縁層19は圧電体層17と同じ圧電性セラミックスからなるのが好ましい。これにより、圧電体層17と同じ工程で第1絶縁層19を形成できるので、後述する製造工程が簡略化でき、コストダウンを図ることが可能になる。同様の理由で、第2絶縁層49は圧電体層37と同じ圧電性セラミックスからなるのが好ましい。   Moreover, it is preferable that the thickness of the first insulating layer 19 is thinner than the thickness of the first connecting portion 21, and in this way, even if the first connecting portion 21 is folded as shown in FIG. The occurrence of cracks in 19 can be suppressed. This effect becomes remarkable when the first insulating layer 19 is made of ceramics. For the same reason, the thickness of the second insulating layer 49 (FIG. 5D) is preferably thinner than the thickness of the second connecting portion 33. The first insulating layer 19 is preferably made of the same piezoelectric ceramic as the piezoelectric layer 17. Thereby, since the first insulating layer 19 can be formed in the same process as the piezoelectric layer 17, the manufacturing process described later can be simplified and the cost can be reduced. For the same reason, the second insulating layer 49 is preferably made of the same piezoelectric ceramic as the piezoelectric layer 37.

図3A〜図3Dは圧電素子1の製造方法の一例を示す工程図である。図3Aに示すように、この製造方法では、まず、2つの第1導電性基板13,13が第1連結部21を介して接続された第1の部材25と、第2導電性基板15からなる第2の部材39とを作製する。   3A to 3D are process diagrams showing an example of a method for manufacturing the piezoelectric element 1. As shown in FIG. 3A, in this manufacturing method, first, from the first member 25 in which the two first conductive substrates 13 and 13 are connected via the first connecting portion 21 and the second conductive substrate 15. A second member 39 is produced.

ついで、図3Bに示すように、第1導電性基板13の表面に圧電体層17を形成し、第1連結部21の表面に第1絶縁層19を形成する。圧電体層17を第1導電性基板13の表面に形成する方法、第1絶縁層19を第1連結部21の表面に形成する方法としては、例えば蒸着法、CVD法、ゾルゲル法、スクリーン印刷法などの公知の手段を用いて、所要の被膜を形成し、しかるのち、焼成等を行なって形成するができる。   Next, as shown in FIG. 3B, the piezoelectric layer 17 is formed on the surface of the first conductive substrate 13, and the first insulating layer 19 is formed on the surface of the first connecting portion 21. Examples of the method for forming the piezoelectric layer 17 on the surface of the first conductive substrate 13 and the method for forming the first insulating layer 19 on the surface of the first connecting portion 21 include vapor deposition, CVD, sol-gel, and screen printing. A known film such as a method can be used to form a required film, and then fired or the like.

次に、第1の部材25を第1連結部21において折り返して(図3C)、2つの第1導電性基板13,13をほぼ平行に配置して互いに対向するようにし、これらの第1導電性基板13,13の間に第2導電性基板15を配置して、第1導電性基板13と第2導電性基板15とを交互に積層する(図3D)。圧電体層17をゾルゲル法やスクリーン印刷法で形成した場合は、その後に焼成工程を施すことがある。圧電体層17が多結晶体である場合にはその焼成工程の後に第1導電性基板13と第2導電性基板15との間に所定の電圧を印加して圧電体層17を分極する工程を施すことがある。   Next, the first member 25 is folded back at the first connecting portion 21 (FIG. 3C), and the two first conductive substrates 13 and 13 are arranged substantially in parallel so as to face each other. The second conductive substrate 15 is disposed between the conductive substrates 13 and 13, and the first conductive substrate 13 and the second conductive substrate 15 are alternately stacked (FIG. 3D). When the piezoelectric layer 17 is formed by a sol-gel method or a screen printing method, a firing step may be performed thereafter. In the case where the piezoelectric layer 17 is a polycrystalline body, a step of polarizing the piezoelectric layer 17 by applying a predetermined voltage between the first conductive substrate 13 and the second conductive substrate 15 after the firing step. May be applied.

第1導電性基板13及び第2導電性基板15としては、導電性を有するものであればよく、例えば、銀、銅、ニッケル、鉄などの金属又はこれらの少なくとも一種を含む合金などを用いることができる。合金としては、例えば、真鍮、ステンレス鋼、銀−パラジウム合金、Ni,Feを主成分とする合金などを用いることができる。Ni,Feを主成分とする合金としては、圧電体層の熱膨張係数に近い52Fe−31Ni−17Co(コバール(登録商標))、58Fe−42Ni(42アロイ)等の合金を用いるのがより好ましい。第1導電性基板13及び第2導電性基板15の厚みは、特に限定されるものではないが、好ましくは0.02〜1.0mm程度であるのがよい。第1導電性基板13及び第2導電性基板15の厚みが0.02mm以上であることで、基板の剛性が高まり、圧電体層17の形成工程、その後の積層工程などにおけるハンドリングが容易となる。第1導電性基板13及び第2導電性基板15の厚みが1.0mm以下であることで、両者を積層一体化した時の密着性が高まり、圧力に対する出力の直線性が向上する。   The first conductive substrate 13 and the second conductive substrate 15 are not particularly limited as long as they have conductivity. For example, a metal such as silver, copper, nickel, iron, or an alloy containing at least one of these is used. Can do. As the alloy, for example, brass, stainless steel, silver-palladium alloy, an alloy mainly composed of Ni, Fe, or the like can be used. As the alloy mainly composed of Ni and Fe, it is more preferable to use an alloy such as 52Fe-31Ni-17Co (Kovar (registered trademark)) or 58Fe-42Ni (42 alloy) which has a thermal expansion coefficient close to that of the piezoelectric layer. . Although the thickness of the 1st conductive substrate 13 and the 2nd conductive substrate 15 is not specifically limited, Preferably it is about 0.02-1.0 mm. Since the thickness of the first conductive substrate 13 and the second conductive substrate 15 is 0.02 mm or more, the rigidity of the substrate is increased, and handling in the formation process of the piezoelectric layer 17 and the subsequent lamination process becomes easy. . When the thicknesses of the first conductive substrate 13 and the second conductive substrate 15 are 1.0 mm or less, the adhesion when the two are laminated and integrated is improved, and the linearity of the output with respect to pressure is improved.

圧電体層17は、例えば、チタン酸ジルコン酸鉛、チタン酸バリウム、窒化アルミニウム、ニオブ酸リチウムなどを主成分とする圧電セラミック材料などの周知の圧電材料により構成されている。第1絶縁層19としては、例えば、絶縁性を有する種々のセラミックスを用いることができ、中でも上記した圧電体層17と同じ材料を用いるのが好ましい。圧電体層17の厚み及び第1絶縁層19の厚みは、特に限定されるものではないが、好ましくは0.001〜0.1mm程度であるのがよい。圧電体層17の厚み及び第1絶縁層19の厚みが0.001mm以上であることで、絶縁抵抗が向上し漏洩電荷が減少して感度特性が向上する。また、圧電体層17の厚みが0.1mm以下であることで、第1導電性基板13との密着性が高まり、圧力に対する出力の直線性が向上する。第1絶縁層19の厚みが0.1mm以下であることで、第1絶縁層19の柔軟性が高まり、第1連結部21の変形に対して第1絶縁層19にクラックが生じたり破断するのを抑制することができる。   The piezoelectric layer 17 is made of a known piezoelectric material such as a piezoelectric ceramic material mainly composed of lead zirconate titanate, barium titanate, aluminum nitride, lithium niobate, or the like. As the first insulating layer 19, for example, various insulating ceramics can be used, and among them, it is preferable to use the same material as the piezoelectric layer 17 described above. The thickness of the piezoelectric layer 17 and the thickness of the first insulating layer 19 are not particularly limited, but preferably about 0.001 to 0.1 mm. When the thickness of the piezoelectric layer 17 and the thickness of the first insulating layer 19 are 0.001 mm or more, the insulation resistance is improved, the leakage charge is reduced, and the sensitivity characteristics are improved. Further, when the thickness of the piezoelectric layer 17 is 0.1 mm or less, the adhesion with the first conductive substrate 13 is enhanced, and the linearity of the output with respect to the pressure is improved. When the thickness of the first insulating layer 19 is 0.1 mm or less, the flexibility of the first insulating layer 19 is increased, and the first insulating layer 19 is cracked or broken with respect to the deformation of the first connecting portion 21. Can be suppressed.

(第2の実施形態)
図4Aに示すように、本発明に係る第2の実施形態に係る圧電素子201は、第1連結部21と第2導電性基板15との間の形状の点で本第1の実施形態に係る圧電素子1と異なる。すなわち、本実施の形態に係る圧電素子201では、第2導電性基板15の側面に面する第1連結部21の内表面が第2導電性基板15の側面から離隔しておらず、第1絶縁層19を介して第2導電性基板15の側面に接している。この形態の場合、第1連結部21の余分な動きを抑制でき、第1連結部21が変形しにくくなるので、第1連結部21の耐久性が向上する。
(Second Embodiment)
As shown in FIG. 4A, the piezoelectric element 201 according to the second embodiment of the present invention is the same as the first embodiment in terms of the shape between the first connecting portion 21 and the second conductive substrate 15. It differs from the piezoelectric element 1 which concerns. That is, in the piezoelectric element 201 according to the present embodiment, the inner surface of the first connecting portion 21 facing the side surface of the second conductive substrate 15 is not separated from the side surface of the second conductive substrate 15, and the first The side surface of the second conductive substrate 15 is in contact with the insulating layer 19. In the case of this form, the excessive movement of the 1st connection part 21 can be suppressed, and since the 1st connection part 21 becomes difficult to deform | transform, the durability of the 1st connection part 21 improves.

(第3の実施形態)
図4Bに示すように、本発明に係る第3の実施形態に係る圧電素子301は、圧電体層27を第1導電性基板13の表面にも形成した点で本第1の実施形態に係る圧電素子1と異なる。また、本実施の形態に係る圧電素子301では、第1連結部21の内表面に第1絶縁層19が形成されているとともに、第1連結部21の外表面にも第1絶縁層29が形成されている。また、好ましくは、第1絶縁層19は圧電体層17と一体化されている。これにより、第1導電性基板13における外表面側の他部材との絶縁性を高めることができるとともに、腐食、他部材からの衝撃などに対する第1連結部21の耐久性が向上する。さらに、圧電素子301はその表裏面に圧電体層17,27がそれぞれ形成されているので、上記と同様に衝撃や腐食に対する耐久性が向上する。また、同様の理由で、第2絶縁層49(図5D)についても、第2連結部33の表面のうち、第1導電性基板13に対面する内表面に形成されていることが好ましく、さらに、第2連結部33の外表面に形成されていることが好ましい。また、第2絶縁層49は第1導電性基板13に対面する内表面に形成されており、圧電体層37と一体化されていることが好ましい。
(Third embodiment)
As shown in FIG. 4B, the piezoelectric element 301 according to the third embodiment of the present invention is related to the first embodiment in that the piezoelectric layer 27 is also formed on the surface of the first conductive substrate 13. Different from the piezoelectric element 1. In the piezoelectric element 301 according to the present embodiment, the first insulating layer 19 is formed on the inner surface of the first connecting portion 21, and the first insulating layer 29 is also formed on the outer surface of the first connecting portion 21. Is formed. Preferably, the first insulating layer 19 is integrated with the piezoelectric layer 17. Thereby, while being able to improve the insulation with the other member of the outer surface side in the 1st electroconductive board | substrate 13, durability of the 1st connection part 21 with respect to corrosion, the impact from another member, etc. improves. Further, since the piezoelectric layers 301 and 27 are formed on the front and back surfaces of the piezoelectric element 301, the durability against impact and corrosion is improved in the same manner as described above. For the same reason, the second insulating layer 49 (FIG. 5D) is also preferably formed on the inner surface facing the first conductive substrate 13 in the surface of the second connecting portion 33. It is preferable that the second connecting portion 33 is formed on the outer surface. The second insulating layer 49 is preferably formed on the inner surface facing the first conductive substrate 13 and integrated with the piezoelectric layer 37.

(第4の実施形態)
図5A〜図5Dと図6A〜図6Dに示すように、第4の実施形態に係る圧電素子401は、第1導電性基板13及び第2導電性基板15が交互に複数回折り重ねられて形成されている。すなわち、一対の第1導電性基板13,13及び第1連結部21は交互に配置されて一体化された一枚の導電性基板を成しており、一対の第1導電性基板13,13は互いに対向するように第1連結部21で折り返されている。本第4の実施形態に係る圧電素子401は、積層の回数の点で、本第1の実施形態に係る圧電素子1と異なる。本第4の実施形態では、第1導電性基板13を7層、第2導電性基板15を6層用い、交互に積層している。
(Fourth embodiment)
As shown in FIGS. 5A to 5D and FIGS. 6A to 6D, the piezoelectric element 401 according to the fourth embodiment includes a plurality of first conductive substrates 13 and second conductive substrates 15 alternately diffracted. Is formed. That is, the pair of first conductive substrates 13 and 13 and the first connecting portion 21 are alternately arranged to form a single conductive substrate, and the pair of first conductive substrates 13 and 13. Are folded at the first connecting portion 21 so as to face each other. The piezoelectric element 401 according to the fourth embodiment is different from the piezoelectric element 1 according to the first embodiment in the number of times of stacking. In the fourth embodiment, seven layers of the first conductive substrate 13 and six layers of the second conductive substrate 15 are used and are alternately stacked.

図5A〜図5D及び図6A〜図6Dに示すように、本第4の実施形態に係る圧電素子401は、7つの第1導電性基板13と、これらの第1導電性基板13と交互に配置され、第1導電性基板13とは異なる極に接続される6つの第2導電性基板15と、を備えている。第1導電性基板13と第2導電性基板15の間には圧電体層17,27,35,37が配置されている。   As shown in FIGS. 5A to 5D and FIGS. 6A to 6D, the piezoelectric element 401 according to the fourth embodiment includes seven first conductive substrates 13 and these first conductive substrates 13 alternately. And six second conductive substrates 15 arranged and connected to poles different from the first conductive substrate 13. Piezoelectric layers 17, 27, 35, and 37 are disposed between the first conductive substrate 13 and the second conductive substrate 15.

第2導電性基板15を介して積層方向に隣り合う2つの第1導電性基板13,13は、それぞれの側部13a,13bを電気的に接続する第1連結部21により連結されている(図5B)。同様に、第1導電性基板13を介して積層方向に隣り合う2つの第2導電性基板15,15は、それぞれの側部15a,15bを電気的に接続する第2連結部33により連結されている(図5D)。   Two first conductive substrates 13, 13 adjacent in the stacking direction via the second conductive substrate 15 are connected by a first connecting portion 21 that electrically connects the side portions 13 a, 13 b ( FIG. 5B). Similarly, two second conductive substrates 15 and 15 that are adjacent to each other in the stacking direction via the first conductive substrate 13 are connected by a second connection portion 33 that electrically connects the side portions 15a and 15b. (FIG. 5D).

以上のように、第4の実施形態に係る圧電素子401は、以下の(1)〜(4)に示す構成部材を有している。
(1)間隔を置いて対向する複数の第1導電性基板13と隣り合う第1導電性基板13間を接続する第1連結部21とを備えた第1極構造体。
この第1極構造体は、第1導電性基板13と第1連結部21とが交互に配置された一枚の導電性基板(第1の部材)45(図6A,図6B)を隣り合う第1導電性基板13が対向するように第1連結部21で折り返してなる。
(2)それぞれ隣り合う第1導電性基板間に設けられているとともに互いに間隔を置いて対向する複数の第2導電性基板15と隣り合う第2導電性基板15間を接続する第2連結部33とを備えた第2極構造体。
この第2極構造体は、第2導電性基板15と第2連結部33とが交互に配置された一枚の導電性基板(第2の部材)47(図6C,図6D)を隣り合う第2導電性基板15が対向するように第2連結部33で折り返してなる。これにより、第1極構造体の互いに対向する第1導電性基板13の間に、第2極構造体の第2導電性基板15の一つが入るように順次配置されている。
また、これらの第1極構造体と第2極構造体とは、第1導電性基板13と第2導電性基板15が交互に配置されるように組み合わされる。
(3)第1導電性基板13と第2導電性基板15の間に重ねて設けられた2つの圧電体層。
これらの2つの圧電体層のうちの一方の圧電体層17,27は第1導電性基板13に接し、他方の圧電体層35,37は第2導電性基板15に接している。
(4)第1連結部21の表面に設けられた第1絶縁層19,29と、第2連結部33の表面に設けられた第2絶縁層43,49。
具体的には、第1連結部21の内表面には第1絶縁層19又は第1絶縁層29が形成されており、第1連結部21の外表面には第1絶縁層29又は第1絶縁層19が形成されている。第2連結部33の内表面には第2絶縁層43又は第2絶縁層49が形成されており、第2連結部33の外表面には第2絶縁層49又は第2絶縁層43が形成されている。
ここで、第1絶縁層19又は第1絶縁層29は、第1連結部21の内表面または外表面のいずれか一方に形成されていればよく、第2絶縁層43又は第2絶縁層49は第2連結部33の内表面又は外表面のいずれか一方に形成されていればよい。
As described above, the piezoelectric element 401 according to the fourth embodiment has constituent members shown in the following (1) to (4).
(1) The 1st polar structure provided with the 1st connection part 21 which connects between the several 1st electroconductive board | substrate 13 which opposes at intervals, and the 1st electroconductive board | substrate 13 adjacent.
In this first polar structure, one conductive substrate (first member) 45 (FIG. 6A, FIG. 6B) in which the first conductive substrate 13 and the first connecting portion 21 are alternately arranged is adjacent. The first conductive portion 13 is folded back at the first connecting portion 21 so as to face each other.
(2) A second connecting portion that is provided between adjacent first conductive substrates and that connects a plurality of second conductive substrates 15 that are opposed to each other at an interval from each other and adjacent second conductive substrates 15. And a second polar structure.
In this second polar structure, one conductive substrate (second member) 47 (FIG. 6C, FIG. 6D) in which the second conductive substrate 15 and the second connecting portion 33 are alternately arranged is adjacent. The second conductive substrate 15 is folded back at the second connecting portion 33 so as to face each other. Thereby, it arrange | positions sequentially so that one of the 2nd conductive substrates 15 of a 2nd polar structure may enter between the 1st conductive substrates 13 which a 1st polar structure mutually opposes.
Further, the first and second polar structures are combined so that the first conductive substrate 13 and the second conductive substrate 15 are alternately arranged.
(3) Two piezoelectric layers provided so as to overlap between the first conductive substrate 13 and the second conductive substrate 15.
One of the two piezoelectric layers 17 and 27 is in contact with the first conductive substrate 13, and the other piezoelectric layers 35 and 37 are in contact with the second conductive substrate 15.
(4) First insulating layers 19 and 29 provided on the surface of the first connecting portion 21 and second insulating layers 43 and 49 provided on the surface of the second connecting portion 33.
Specifically, the first insulating layer 19 or the first insulating layer 29 is formed on the inner surface of the first connecting portion 21, and the first insulating layer 29 or the first insulating layer 29 is formed on the outer surface of the first connecting portion 21. An insulating layer 19 is formed. The second insulating layer 43 or the second insulating layer 49 is formed on the inner surface of the second connecting portion 33, and the second insulating layer 49 or the second insulating layer 43 is formed on the outer surface of the second connecting portion 33. Has been.
Here, the first insulating layer 19 or the first insulating layer 29 may be formed on either the inner surface or the outer surface of the first connecting portion 21, and the second insulating layer 43 or the second insulating layer 49. May be formed on either the inner surface or the outer surface of the second connecting portion 33.

図7A〜図7Dは、圧電素子401の製造方法の一例を示す工程図である。図7Aに示すように、この製造方法では、まず、7つの第1導電性基板13が第1連結部21を介して直列に接続された第1の部材45を作製する。ついで、6つの第2導電性基板15が第2連結部33を介して直列に接続された第2の部材47を作製する。   7A to 7D are process diagrams illustrating an example of a method for manufacturing the piezoelectric element 401. As shown in FIG. 7A, in this manufacturing method, first, the first member 45 in which the seven first conductive substrates 13 are connected in series via the first connecting portion 21 is manufactured. Next, the second member 47 in which the six second conductive substrates 15 are connected in series via the second connecting portion 33 is produced.

次に、図7Bに示すように、第1導電性基板13の両主面に圧電体層17及び圧電体層27をそれぞれ形成する。また、第1連結部21の表裏面にも第1絶縁層19及び第1絶縁層29をそれぞれ形成する。同様に第2導電性基板15の両主面に圧電体層35及び圧電体層37をそれぞれ形成する。また、第2連結部33の表裏面にも第2絶縁層43及び第2絶縁層49を形成する。   Next, as shown in FIG. 7B, the piezoelectric layer 17 and the piezoelectric layer 27 are formed on both main surfaces of the first conductive substrate 13, respectively. Further, the first insulating layer 19 and the first insulating layer 29 are also formed on the front and back surfaces of the first connecting portion 21, respectively. Similarly, the piezoelectric layer 35 and the piezoelectric layer 37 are respectively formed on both main surfaces of the second conductive substrate 15. Further, the second insulating layer 43 and the second insulating layer 49 are also formed on the front and back surfaces of the second connecting portion 33.

ついで、図7Cに示すように、第1の部材45を複数の第1連結部21においてそれぞれ折り返して複数の第1導電性基板13をほぼ平行に重なるように配列するとともに、第2の部材47を第2連結部33においてそれぞれ折り返して複数の第2導電性基板15をほぼ平行に重なるように配列する。これらの第1の部材45と第2の部材47を、図7Cに示すように、組み合わせることで第1導電性基板13と第2導電性基板15とを圧電体層17、27、35,37を介して交互に積層する。   Next, as shown in FIG. 7C, the first members 45 are folded at the plurality of first connecting portions 21 to arrange the plurality of first conductive substrates 13 so as to overlap substantially in parallel, and the second member 47. Are folded at the second connecting portion 33 and the plurality of second conductive substrates 15 are arranged so as to be substantially parallel to each other. As shown in FIG. 7C, the first conductive substrate 13 and the second conductive substrate 15 are combined with the piezoelectric layers 17, 27, 35, and 37 by combining the first member 45 and the second member 47. Are stacked alternately.

(第5の実施形態)
本発明に係る第5の実施形態の圧電素子501は、連結部の構造が第1の実施形態の圧電素子1と異なっている他は、第1の実施形態の圧電素子1と同様に構成されている。以下の説明で参照する図面において、第1の実施形態の圧電素子1と同様の部材については同様の符号を付して示しており、特に説明しない限りは第1の実施形態の部材と同様の構成である。
すなわち、図8A、図8Bに示すように、第5の実施形態の圧電素子501は、第1の実施形態の第1連結部21、第1絶縁層19及び空間23に代えて、それらと形状がそれぞれ異なる第1連結部210、第1絶縁層190及び空間230を備えている。
そして、第1導電性基板13のそれぞれの側部13a,13bは、第1連結部210により電気的に接続され、その第1連結部210は、一方の側部13aから他方の側部13bに架け渡されたアーチ状のものであるが、その形状が第1連結部21と異なっている。
(Fifth embodiment)
The piezoelectric element 501 according to the fifth embodiment of the present invention is configured in the same manner as the piezoelectric element 1 according to the first embodiment, except that the structure of the connecting portion is different from that of the piezoelectric element 1 according to the first embodiment. ing. In the drawings referred to in the following description, the same members as those of the piezoelectric element 1 of the first embodiment are denoted by the same reference numerals, and are the same as the members of the first embodiment unless otherwise specified. It is a configuration.
That is, as shown in FIGS. 8A and 8B, the piezoelectric element 501 of the fifth embodiment is formed in place of the first connecting portion 21, the first insulating layer 19 and the space 23 of the first embodiment. Are provided with different first connecting portions 210, first insulating layers 190, and spaces 230, respectively.
And each side part 13a, 13b of the 1st electroconductive board | substrate 13 is electrically connected by the 1st connection part 210, The 1st connection part 210 is changed from one side part 13a to the other side part 13b. Although it is an arch-like one that is stretched over, the shape is different from that of the first connecting portion 21.

具体的には、この第5の実施形態において、第1連結部210の外周及び内周は円弧形状であり、さらにその外周円弧に対する中心角より内周円弧に対する中心角の方が大きくなっている。換言すると、外周円弧の曲率半径が内周円弧の曲率半径よりも大きくなっている。このように構成することで、第1連結部210の厚さを第1導電性基板13の厚さより薄くでき、さらに第1連結部210は、第1連結部210の両端から中央に向かって漸次厚みが薄くなるようにできる。また、第2連結部330についても、その外周及び内周は円弧形状であり、さらにその外周円弧に対する中心角より内周円弧に対する中心角の方が大きくなっているようにすることができ、それによって両端から中央に向かって漸次厚みが薄くなるようにできる。   Specifically, in the fifth embodiment, the outer periphery and the inner periphery of the first connecting portion 210 have an arc shape, and the center angle with respect to the inner arc is larger than the center angle with respect to the outer arc. . In other words, the radius of curvature of the outer circumferential arc is larger than the radius of curvature of the inner circumferential arc. With this configuration, the thickness of the first connection part 210 can be made thinner than the thickness of the first conductive substrate 13, and the first connection part 210 gradually increases from both ends of the first connection part 210 toward the center. The thickness can be reduced. In addition, the outer and inner peripheries of the second connecting portion 330 are arc-shaped, and the center angle with respect to the inner arc can be made larger than the center angle with respect to the outer arc. Thus, the thickness can be gradually reduced from both ends toward the center.

また、第1連結部210の表面のうち、第2導電性基板15の側面に面した内表面には第1絶縁層190が形成されている。このように第1連結部210の内表面に第1絶縁層190が形成されているので、第1導電性基板13と第2導電性基板15が短絡するのを抑制できる。その結果、圧電素子501の感度が低下するのを長期にわたり抑制できるので、耐久性が向上する。また、第1連結部210の内表面が第1絶縁層190と空間230を介して圧電素子501の側面から離隔しているので、第1導電性基板13と第2導電性基板15の短絡抑制効果をさらに向上させることができる。   In addition, a first insulating layer 190 is formed on the inner surface of the surface of the first connecting portion 210 facing the side surface of the second conductive substrate 15. Thus, since the 1st insulating layer 190 is formed in the inner surface of the 1st connection part 210, it can suppress that the 1st conductive substrate 13 and the 2nd conductive substrate 15 short-circuit. As a result, the sensitivity of the piezoelectric element 501 can be suppressed over a long period of time, so that the durability is improved. In addition, since the inner surface of the first connecting portion 210 is separated from the side surface of the piezoelectric element 501 via the first insulating layer 190 and the space 230, the short circuit between the first conductive substrate 13 and the second conductive substrate 15 is suppressed. The effect can be further improved.

また、上述したように、図8B及び図9Bに示すように、第1連結部210は、その厚みが第1導電性基板13の厚みよりも薄くなっている。具体的には、第1連結部210を折り返したときに圧電素子501の側面に面する側の内表面は、その断面が円弧状であり、中央付近の厚みが最も薄く、両端部(第1導電性基板13との境界付近)の厚みが最も大きく第1導電性基板13の厚みとほぼ同程度である。このように第1連結部210の厚みが両端側から中央側に向かって漸次薄くなることで、局部的に応力が集中するのを抑制できる。   Further, as described above, as shown in FIGS. 8B and 9B, the thickness of the first connecting portion 210 is thinner than the thickness of the first conductive substrate 13. Specifically, the inner surface on the side facing the side surface of the piezoelectric element 501 when the first connecting portion 210 is folded back has an arc-shaped cross section, and the thickness near the center is the thinnest. The thickness in the vicinity of the boundary with the conductive substrate 13 is the largest and is approximately the same as the thickness of the first conductive substrate 13. As described above, the thickness of the first connecting portion 210 gradually decreases from the both end sides toward the center side, so that it is possible to suppress local concentration of stress.

また、第1連結部210の内表面側の厚みを薄くすることで、図8Bに示すように第1連結部210が折り返されたときに内側となって圧縮応力がかかりやすい部位において応力を低減することができる。その結果、この内表面に第1絶縁層190が形成されている場合であっても第1絶縁層190にクラックが発生するなどの不具合を抑制することができる。この効果は、第1絶縁層190が特にセラミックスからなるときに顕著となる。第1絶縁層190は圧電体層17と同じ圧電性セラミックスからなるのが好ましい。これにより、圧電体層17と同じ工程で第1絶縁層190を形成することができるので、後述する製造工程が簡略化でき、コストダウンを図ることが可能になる。   In addition, by reducing the thickness of the inner surface side of the first connecting portion 210, the stress is reduced at the portion where the first connecting portion 210 is turned and becomes compressive stress as shown in FIG. 8B. can do. As a result, even when the first insulating layer 190 is formed on the inner surface, it is possible to suppress problems such as the occurrence of cracks in the first insulating layer 190. This effect is remarkable when the first insulating layer 190 is made of ceramics. The first insulating layer 190 is preferably made of the same piezoelectric ceramic as the piezoelectric layer 17. Thereby, since the first insulating layer 190 can be formed in the same process as the piezoelectric layer 17, the manufacturing process described later can be simplified and the cost can be reduced.

また、第1絶縁層190の厚みが第1連結部210の厚みよりも薄いことが好ましく、これにより、図8Bに示すように第1連結部210が折り返されても、第1絶縁層190にクラックが生じるのを抑制できる。この効果は、第1絶縁層190が特にセラミックスからなるときに顕著となる。第1絶縁層190は圧電体層17と同じ圧電性セラミックスからなるのが好ましい。これにより、圧電体層17と同じ工程で第1絶縁層190を形成できるので、後述する製造工程が簡略化でき、コストダウンを図ることが可能になる。   Further, it is preferable that the thickness of the first insulating layer 190 is smaller than the thickness of the first connecting portion 210. Accordingly, even when the first connecting portion 210 is folded back as shown in FIG. The generation of cracks can be suppressed. This effect is remarkable when the first insulating layer 190 is made of ceramics. The first insulating layer 190 is preferably made of the same piezoelectric ceramic as the piezoelectric layer 17. Thereby, since the first insulating layer 190 can be formed in the same process as the piezoelectric layer 17, the manufacturing process described later can be simplified and the cost can be reduced.

図10A〜図10Dは圧電素子501の製造方法の一例を示す工程図である。図10Aに示すように、この製造方法では、まず、2つの第1導電性基板13が第1連結部210を介して接続された第1の部材250と、第2導電性基板15からなる第2の部材39とを作製する。
次に、第1の部材250における第1連結部210に、断面が円弧状の凹みを形成する。
第1の部材250における第1連結部210に、断面が円弧状の凹みを形成するには、エッチング、研削加工、プレス加工、鍛造などの方法を用いればよい。
10A to 10D are process diagrams showing an example of a method for manufacturing the piezoelectric element 501. As shown in FIG. 10A, in this manufacturing method, first, a first member 250 in which two first conductive substrates 13 are connected via a first connecting portion 210 and a second conductive substrate 15 is used. 2 member 39 is produced.
Next, a recess having an arcuate cross section is formed in the first connecting portion 210 of the first member 250.
A method such as etching, grinding, pressing, or forging may be used to form a recess having an arcuate cross section in the first connecting portion 210 of the first member 250.

ついで、図10Bに示すように、第1導電性基板13の表面に圧電体層17を形成し、第1連結部210の表面に第1絶縁層190を形成する。圧電体層17を第1導電性基板13の表面に形成する方法、第1絶縁層190を第1連結部210の表面に形成する方法としては、例えば蒸着法、CVD法、ゾルゲル法、スクリーン印刷法などの公知の手段を用いて、所要の被膜を形成し、しかるのち、焼成等の処理を行って形成することができる。   Next, as shown in FIG. 10B, the piezoelectric layer 17 is formed on the surface of the first conductive substrate 13, and the first insulating layer 190 is formed on the surface of the first connecting portion 210. Examples of the method for forming the piezoelectric layer 17 on the surface of the first conductive substrate 13 and the method for forming the first insulating layer 190 on the surface of the first connecting portion 210 include vapor deposition, CVD, sol-gel, and screen printing. Using a known means such as a method, a required film can be formed and then formed by a treatment such as firing.

次に、第1の部材250を第1連結部210において折り返して、2つの第1導電性基板13,13をほぼ平行に配置し、これらの第1導電性基板13,13の間に第2導電性基板15を配置して(図10C)、第1導電性基板13と第2導電性基板15とを交互に積層する(図10D)。圧電体層17をゾルゲル法やスクリーン印刷法で形成した場合は、その後に焼成工程を施すことがある。圧電体層17が多結晶体である場合にはその後に第1導電性基板13と第2導電性基板15との間に所定の電圧を印加して圧電体層17を分極する工程を施すことがある。   Next, the first member 250 is folded back at the first connecting portion 210 so that the two first conductive substrates 13 and 13 are arranged substantially in parallel. The conductive substrate 15 is disposed (FIG. 10C), and the first conductive substrate 13 and the second conductive substrate 15 are alternately stacked (FIG. 10D). When the piezoelectric layer 17 is formed by a sol-gel method or a screen printing method, a firing step may be performed thereafter. When the piezoelectric layer 17 is a polycrystalline body, a step of polarizing the piezoelectric layer 17 by applying a predetermined voltage between the first conductive substrate 13 and the second conductive substrate 15 is then performed. There is.

(第6の実施形態)
図11に示すように、第6の実施形態に係る圧電素子は、圧電体層の形成位置の点で本第5の実施形態に係る圧電素子501と異なる。すなわち、本実施の形態に係る圧電素子601では、第1連結部210の内表面に第1絶縁層190が形成されているとともに、第1連結部210の外表面にも第1絶縁層290が形成されている。これにより、第1導電性基板13における外表面側の他部材との絶縁性を高めることができるとともに、腐食、他部材からの衝撃などに対する第1連結部210の耐久性が向上する。圧電素子601はその表裏面に圧電体層27がそれぞれ形成されているので、上記と同様に衝撃や腐食に対する耐久性が向上する。
(Sixth embodiment)
As shown in FIG. 11, the piezoelectric element according to the sixth embodiment differs from the piezoelectric element 501 according to the fifth embodiment in terms of the formation position of the piezoelectric layer. That is, in the piezoelectric element 601 according to the present embodiment, the first insulating layer 190 is formed on the inner surface of the first connecting portion 210, and the first insulating layer 290 is also formed on the outer surface of the first connecting portion 210. Is formed. Thereby, while being able to improve the insulation with the other member of the outer surface side in the 1st conductive substrate 13, durability of the 1st connection part 210 with respect to corrosion, the impact from another member, etc. improves. Since the piezoelectric layers 27 are formed on the front and back surfaces of the piezoelectric element 601, durability against impact and corrosion is improved in the same manner as described above.

(第7の実施形態)
本発明に係る第7の実施形態の圧電素子701は、連結部の構造が第4の実施形態の圧電素子401と異なっている他は、第4の実施形態の圧電素子401と同様に構成されている。以下の説明で参照する図面において、第1の実施形態の圧電素子1と同様の部材については同様の符号を付して示しており、特に説明しない限りは第4の実施形態の部材と同様の構成である。
すなわち、図12A〜図12Dに示すように、第7の実施形態の圧電素子701は、第4の実施形態の第1連結部21、第1絶縁層19及び空間23に代えて、それらと形状がそれぞれ異なる第1連結部210、第1絶縁層190及び空間230を備え、第4の実施形態の第2連結部33、第2絶縁層43,49に代えて、それらと形状がそれぞれ異なる第2連結部330、第2絶縁層430,490を備えている。
ここで、第7の実施形態の圧電素子701において、第1連結部210、第1絶縁層190及び空間230は第5の実施形態と同様に構成されている。
また、第2連結部330、第2絶縁層430,490も第5の実施形態の第1連結部210、第1絶縁層190と同様に構成されている。
(Seventh embodiment)
The piezoelectric element 701 of the seventh embodiment according to the present invention is configured in the same manner as the piezoelectric element 401 of the fourth embodiment, except that the structure of the connecting portion is different from the piezoelectric element 401 of the fourth embodiment. ing. In the drawings referred to in the following description, the same members as those of the piezoelectric element 1 of the first embodiment are denoted by the same reference numerals, and are the same as the members of the fourth embodiment unless otherwise specified. It is a configuration.
That is, as shown in FIGS. 12A to 12D, the piezoelectric element 701 of the seventh embodiment is shaped in place of the first connecting portion 21, the first insulating layer 19, and the space 23 of the fourth embodiment. Are provided with different first connecting portions 210, first insulating layers 190 and spaces 230, and instead of the second connecting portions 33 and the second insulating layers 43, 49 of the fourth embodiment, the shapes thereof are different from each other. 2 connection part 330 and 2nd insulating layers 430 and 490 are provided.
Here, in the piezoelectric element 701 of the seventh embodiment, the first connecting portion 210, the first insulating layer 190, and the space 230 are configured in the same manner as in the fifth embodiment.
In addition, the second connecting portion 330 and the second insulating layers 430 and 490 are configured similarly to the first connecting portion 210 and the first insulating layer 190 in the fifth embodiment.

以上のように構成された第7の実施形態の圧電素子701は、図12A〜図12D及び図13A〜図13Dに示すように、7つの第1導電性基板13と、これらの第1導電性基板13と交互に配置され、第1導電性基板13とは異なる極に接続される6つの第2導電性基板15と、を備えている。第1導電性基板13と第2導電性基板15の間には圧電体層17,27,35,37が配置されている。   As shown in FIGS. 12A to 12D and FIGS. 13A to 13D, the piezoelectric element 701 of the seventh embodiment configured as described above includes seven first conductive substrates 13 and their first conductive properties. Six second conductive substrates 15 that are alternately arranged with the substrates 13 and are connected to poles different from those of the first conductive substrate 13 are provided. Piezoelectric layers 17, 27, 35, and 37 are disposed between the first conductive substrate 13 and the second conductive substrate 15.

また、第2導電性基板15を介して積層方向に隣り合う2つの第1導電性基板13,13は、それぞれの側部13a,13bを電気的に接続する第1連結部210より連結されている。同様に、第1導電性基板13を介して積層方向に隣り合う2つの第2導電性基板15,15は、それぞれの側部15a,15bを電気的に接続する第2連結部330により連結されている。   Further, the two first conductive substrates 13 and 13 adjacent in the stacking direction via the second conductive substrate 15 are connected by the first connecting portion 210 that electrically connects the side portions 13a and 13b. Yes. Similarly, two second conductive substrates 15 and 15 that are adjacent to each other in the stacking direction via the first conductive substrate 13 are coupled by a second coupling unit 330 that electrically connects the side portions 15a and 15b. ing.

第1連結部210の内表面には第1絶縁層190が形成されており、連結部19の外表面には第1絶縁層290が形成されている。第2連結部330の内表面には第2絶縁層430が形成されており、第2連結部330の外表面には第2絶縁層490が形成されている。   A first insulating layer 190 is formed on the inner surface of the first connecting portion 210, and a first insulating layer 290 is formed on the outer surface of the connecting portion 19. A second insulating layer 430 is formed on the inner surface of the second connecting part 330, and a second insulating layer 490 is formed on the outer surface of the second connecting part 330.

図14A〜図14Dは、圧電素子701の製造方法の一例を示す工程図である。図14Aに示すように、この製造方法では、まず、7つの第1導電性基板13が第1連結部210を介して直列に接続された第1の部材450を作製する。ついで、6つの第2導電性基板15が第2連結部330を介して直列に接続された第2の部材470を作製する。   14A to 14D are process diagrams showing an example of a method for manufacturing the piezoelectric element 701. As shown in FIG. 14A, in this manufacturing method, first, a first member 450 in which seven first conductive substrates 13 are connected in series via a first connecting portion 210 is manufactured. Next, the second member 470 in which the six second conductive substrates 15 are connected in series via the second connecting portion 330 is produced.

次に、図14Bに示すように、第1導電性基板13の両主面に圧電体層17及び圧電体層27をそれぞれ形成する。また、第1連結部210の表裏面にも第1絶縁層190及び第1絶縁層290をそれぞれ形成する。同様に第2導電性基板15の両主面に圧電体層35及び圧電体層37をそれぞれ形成する。また、第2連結部330の表裏面にも第2絶縁層430及び第2絶縁層490を形成する。   Next, as shown in FIG. 14B, the piezoelectric layer 17 and the piezoelectric layer 27 are formed on both main surfaces of the first conductive substrate 13, respectively. Also, the first insulating layer 190 and the first insulating layer 290 are formed on the front and back surfaces of the first connecting part 210, respectively. Similarly, the piezoelectric layer 35 and the piezoelectric layer 37 are respectively formed on both main surfaces of the second conductive substrate 15. Further, the second insulating layer 430 and the second insulating layer 490 are also formed on the front and back surfaces of the second connection part 330.

ついで、第1の部材450を複数の第1連結部210においてそれぞれ折り返して複数の第1導電性基板13をほぼ平行に配列するとともに、第2の部材470を第2連結部330においてそれぞれ折り返して複数の第2導電性基板15をほぼ平行に配列する。これらの第1の部材450と第2の部材470を組み合わせることで第1導電性基板13と第2導電性基板15とを交互に積層する。   Next, the first member 450 is folded back at the plurality of first connecting portions 210 to arrange the plurality of first conductive substrates 13 substantially in parallel, and the second member 470 is folded back at the second connecting portion 330. A plurality of second conductive substrates 15 are arranged substantially in parallel. By combining the first member 450 and the second member 470, the first conductive substrate 13 and the second conductive substrate 15 are alternately stacked.

(第8の実施形態)
図15Aに示すように、この第8の実施形態に係る圧電素子では、第1連結部51の両方の主面にそれぞれ凹みが形成されており、第1連結部51の断面は両方の主面が円弧状になっている。これにより、第1連結部51において折り返したときの応力緩和効果をより高めることができる。
(Eighth embodiment)
As shown in FIG. 15A, in the piezoelectric element according to the eighth embodiment, both main surfaces of the first connecting portion 51 are formed with recesses, and the cross section of the first connecting portion 51 is both main surfaces. Is arcuate. Thereby, the stress relaxation effect when folded in the 1st connection part 51 can be heightened more.

(第9の実施形態)
図15Bに示すように第1連結部53の厚みをほぼ一定にしつつ、第1導電性基板13の厚みよりも薄くしてもよい。この場合には加工が容易であるという利点がある。
(Ninth embodiment)
As shown in FIG. 15B, the thickness of the first coupling portion 53 may be made substantially constant while being thinner than the thickness of the first conductive substrate 13. In this case, there is an advantage that processing is easy.

(圧力センサ)
図16に示すように、この圧力センサは、金属などからなるハウジング101内に圧電素子701が搭載されている。ハウジング101の先端(図中の下端)にはダイヤフラム状の受圧面103が設けられている。この受圧面103は例えば内燃機関のシリンダ内に配置される。受圧面103で受圧した圧力はハウジング101内の圧力伝達部材105を経由して圧電素子701に伝達される。圧電素子701に加わる圧力に応じて発生する電荷を公知の手段で検出することにより圧力を検知できる。圧力伝達部材105の一端は受圧面103に接しており、他端は圧電素子701に接している。圧電素子701の上面を押圧する固定螺子107によって圧電素子701及び圧力伝達部材105が受圧面103に押さえつけられている。
(Pressure sensor)
As shown in FIG. 16, this pressure sensor has a piezoelectric element 701 mounted in a housing 101 made of metal or the like. A diaphragm-shaped pressure receiving surface 103 is provided at the front end (lower end in the figure) of the housing 101. The pressure receiving surface 103 is disposed, for example, in a cylinder of the internal combustion engine. The pressure received by the pressure receiving surface 103 is transmitted to the piezoelectric element 701 via the pressure transmitting member 105 in the housing 101. The pressure can be detected by detecting the charge generated according to the pressure applied to the piezoelectric element 701 by a known means. One end of the pressure transmission member 105 is in contact with the pressure receiving surface 103, and the other end is in contact with the piezoelectric element 701. The piezoelectric element 701 and the pressure transmission member 105 are pressed against the pressure receiving surface 103 by a fixing screw 107 that presses the upper surface of the piezoelectric element 701.

以上の圧力センサでは、本発明に係る第7の実施形態の圧電素子701を用いたが、例えば、本発明に係る第4の実施形態の圧電素子401などの本発明に係る他の実施形態の圧電素子を用いて構成してもよい。   In the above pressure sensor, the piezoelectric element 701 according to the seventh embodiment of the present invention is used. However, for example, the piezoelectric element 401 according to the fourth embodiment of the present invention is used in other embodiments according to the present invention. You may comprise using a piezoelectric element.

Claims (31)

平行に配置された一対の第1導電性基板と、
前記一対の第1導電性基板の間に配置され、前記第1導電性基板とは異なる極に接続される第2導電性基板と、
前記第1導電性基板と前記第2導電性基板の間にそれぞれ設けられ、かつ前記第1導電性基板と前記第2導電性基板とにそれぞれ接する2つの圧電体層と、
前記一対の第1導電性基板を電気的に接続するものであって、一方の前記第1導電性基板の側部から他方の前記第1導電性基板の側部に架け渡された第1連結部と、
前記第1連結部の表面に形成された第1絶縁層と、を備えており、
前記第1絶縁層が、前記圧電体層と同じ材料からなることを特徴とする圧電素子。
A pair of first conductive substrates arranged in parallel;
A second conductive substrate disposed between the pair of first conductive substrates and connected to a pole different from the first conductive substrate;
Two piezoelectric layers respectively provided between the first conductive substrate and the second conductive substrate and in contact with the first conductive substrate and the second conductive substrate;
A first connection that electrically connects the pair of first conductive substrates and spans from a side of one of the first conductive substrates to a side of the other first conductive substrate. And
A first insulating layer formed on a surface of the first connecting portion ,
The piezoelectric element, wherein the first insulating layer is made of the same material as the piezoelectric layer .
前記一対の第1導電性基板及び前記第1連結部は交互に配置されて一体化された一枚の導電性基板を成しており、前記一対の第1導電性基板は互いに対向するように前記第1連結部で折り返されていることを特徴とする請求項1記載の圧電素子。   The pair of first conductive substrates and the first connecting portion are alternately arranged to form a single conductive substrate, and the pair of first conductive substrates are opposed to each other. The piezoelectric element according to claim 1, wherein the piezoelectric element is folded at the first connecting portion. 間隔を置いて対向する複数の第1導電性基板と隣り合う該第1導電性基板間を接続する第1連結部とを備え、前記第1導電性基板と前記第1連結部とが交互に配置された一枚の導電性基板を隣り合う前記第1導電性基板が対向するように前記第1連結部で折り返されてなる第1極構造体と、
それぞれ隣り合う前記第1導電性基板間に設けられているとともに互いに間隔を置いて対向する複数の第2導電性基板と隣り合う該第2導電性基板間を接続する第2連結部とを備え、前記第2導電性基板と前記第2連結部とが交互に配置された一枚の導電性基板を隣り合う前記第2導電性基板が対向するように前記第2連結部で折り返されてなる第2極構造体と、
前記第1導電性基板と前記第2導電性基板の間にそれぞれ設けられ、かつ前記第1導電性基板と前記第2導電性基板とにそれぞれ接する2つの圧電体層と、を備えた圧電素子であって、
前記第1連結部の表面に第1絶縁層が設けられ、前記第2連結部の表面に第2絶縁層が設けられており、
前記第2絶縁層が、前記圧電体層と同じ材料からなることを特徴とする圧電素子。
A plurality of first conductive substrates facing each other at intervals and a first connecting portion connecting adjacent first conductive substrates, wherein the first conductive substrate and the first connecting portion are alternately arranged. A first polar structure formed by folding back one conductive substrate at the first connecting portion so that the adjacent first conductive substrates face each other;
A plurality of second conductive substrates provided between the adjacent first conductive substrates and facing each other at an interval, and a second connecting portion connecting the adjacent second conductive substrates. The second conductive substrate and the second connecting portion are alternately folded at the second connecting portion so that the adjacent second conductive substrates face each other. A second pole structure;
A piezoelectric element comprising two piezoelectric layers provided between the first conductive substrate and the second conductive substrate and in contact with the first conductive substrate and the second conductive substrate, respectively. Because
A first insulating layer is provided on a surface of the first connecting portion, and a second insulating layer is provided on a surface of the second connecting portion ;
The piezoelectric element, wherein the second insulating layer is made of the same material as the piezoelectric layer .
前記第2連結部は、前記第2連結部が接続された前記第2導電性基板の間に配置された前記第1導電性基板の側部から離隔して形成されていることを特徴とする請求項3に記載の圧電素子。   The second connection part is formed apart from a side part of the first conductive substrate disposed between the second conductive substrates to which the second connection part is connected. The piezoelectric element according to claim 3. 前記第2絶縁層は、前記第2連結部の表面のうち、前記第1導電性基板に対面する内表面に形成されていることを特徴とする請求項3又は4に記載の圧電素子。   5. The piezoelectric element according to claim 3, wherein the second insulating layer is formed on an inner surface of the surface of the second coupling portion that faces the first conductive substrate. 6. 前記第2絶縁層は、前記第2連結部の外表面に形成されていることを特徴とする請求項3〜5のいずれか1つに記載の圧電素子。   6. The piezoelectric element according to claim 3, wherein the second insulating layer is formed on an outer surface of the second coupling portion. 前記第2絶縁層の厚みが、前記第2連結部の厚みよりも薄いことを特徴とする請求項3〜6のうちのいずれか1つに記載の圧電素子。   7. The piezoelectric element according to claim 3, wherein a thickness of the second insulating layer is thinner than a thickness of the second coupling portion. 前記第2絶縁層は、前記第1導電性基板に対面する内表面に形成されており、前記圧電体層と一体化されていることを特徴とする請求項に記載の圧電素子。 4. The piezoelectric element according to claim 3 , wherein the second insulating layer is formed on an inner surface facing the first conductive substrate, and is integrated with the piezoelectric layer. 5. 前記第1連結部は、前記第1連結部が接続された前記一対の第1導電性基板の間に配置された前記第2導電性基板の側部から離隔して形成されていることを特徴とする請求項1〜のうちのいずれか1つに記載の圧電素子。 The first connection part is formed apart from a side part of the second conductive substrate disposed between the pair of first conductive substrates to which the first connection part is connected. The piezoelectric element according to any one of claims 1 to 8 . 前記第1絶縁層は、前記第1連結部の表面のうち、前記第2導電性基板に対面する内表面に形成されていることを特徴とする請求項1〜のうちのいずれか1つに記載の圧電素子。 The first insulating layer is formed on an inner surface of the surface of the first connecting portion facing the second conductive substrate, according to any one of claims 1 to 9. The piezoelectric element described in 1. 前記第1絶縁層は、前記第1連結部の外表面に形成されていることを特徴とする請求項1〜のうちのいずれか1つに記載の圧電素子。 The first insulating layer, the piezoelectric element according to any one of claims 1-9, characterized in that formed on the outer surface of the first connection part. 前記第1絶縁層の厚みが、前記第1連結部の厚みよりも薄いことを特徴とする請求項1〜11のうちのいずれか1つに記載の圧電素子。 The thickness of the first insulating layer, a piezoelectric element according to any one of claims 1 to 11, characterized in that thinner than the thickness of the first connection part. 前記第1絶縁層は、前記第2導電性基板に対面する内表面に形成されており、前記圧電体層と一体化されていることを特徴とする請求項に記載の圧電素子。 2. The piezoelectric element according to claim 1 , wherein the first insulating layer is formed on an inner surface facing the second conductive substrate, and is integrated with the piezoelectric layer. 平行に配置された一対の第1導電性基板と、
該一対の第1導電性基板の間に配置され、前記第1導電性基板とは異なる極に接続される第2導電性基板と、
前記第1導電性基板と前記第2導電性基板の間にそれぞれ設けられ、かつ前記第1導電性基板と前記第2導電性基板とにそれぞれ接する2つの圧電体層と、
前記一対の第1導電性基板を電気的に接続するものであって、一方の前記第1導電性基板の側部から他方の前記第1導電性基板の側部に架け渡され、前記第1導電性基板よりも厚みが薄い第1連結部と、
を備えており、
前記第1連結部は、両端から中央に向かって漸次厚みが薄くなっていることを特徴とする圧電素子。
A pair of first conductive substrates arranged in parallel;
A second conductive substrate disposed between the pair of first conductive substrates and connected to a pole different from the first conductive substrate;
Two piezoelectric layers respectively provided between the first conductive substrate and the second conductive substrate and in contact with the first conductive substrate and the second conductive substrate;
The pair of first conductive substrates are electrically connected to each other, spanned from one side of the first conductive substrate to the side of the other first conductive substrate, A first connecting portion having a thickness smaller than that of the conductive substrate;
Equipped with a,
The piezoelectric element according to claim 1, wherein the first connecting portion has a thickness that gradually decreases from both ends toward the center .
前記一対の第1導電性基板及び前記第1連結部は一枚の導電性基板からなり、前記一対の第1導電性基板は互いに対向するように前記第1連結部で折り返されていることを特徴とする請求項14に記載の圧電素子。 The pair of first conductive substrates and the first connecting portion are formed of a single conductive substrate, and the pair of first conductive substrates are folded back at the first connecting portion so as to face each other. The piezoelectric element according to claim 14 . 間隔を置いて対向する複数の第1導電性基板と隣り合う該第1導電性基板間を接続する第1連結部とを備え、前記第1導電性基板と前記第1連結部とが交互に配置された一枚の導電性基板を隣り合う前記第1導電性基板が対向するように前記第1連結部で折り返されてなる第1極構造体と、
それぞれ隣り合う前記第1導電性基板間に設けられているとともに互いに間隔を置いて対向する複数の第2導電性基板と隣り合う該第2導電性基板間を接続する第2連結部とを備え、前記第2導電性基板と前記第2連結部とが交互に配置された一枚の導電性基板を隣り合う前記第2導電性基板が対向するように前記第2連結部で折り返されてなる第2極構造体と、
前記第1導電性基板と前記第2導電性基板の間にそれぞれ設けられ、かつ前記第1導電性基板と前記第2導電性基板とにそれぞれ接する2つの圧電体層と、を備えた圧電素子であって、
前記第1連結部の厚さは、前記第1導電性基板の厚さより薄く、前記第2連結部の厚さは、前記第2導電性基板の厚さより薄く、
前記第2連結部は、両端から中央に向かって漸次厚みが薄くなっていることを特徴とする圧電素子。
A plurality of first conductive substrates facing each other at intervals and a first connecting portion connecting adjacent first conductive substrates, wherein the first conductive substrate and the first connecting portion are alternately arranged. A first polar structure formed by folding back one conductive substrate at the first connecting portion so that the adjacent first conductive substrates face each other;
A plurality of second conductive substrates provided between the adjacent first conductive substrates and facing each other at an interval, and a second connecting portion connecting the adjacent second conductive substrates. The second conductive substrate and the second connecting portion are alternately folded at the second connecting portion so that the adjacent second conductive substrates face each other. A second pole structure;
A piezoelectric element comprising two piezoelectric layers provided between the first conductive substrate and the second conductive substrate and in contact with the first conductive substrate and the second conductive substrate, respectively. Because
The thickness of the first connecting portion is thinner than the thickness of the first conductive substrate, the thickness of the second connecting portion, rather thin than the thickness of said second conductive substrate,
The piezoelectric element is characterized in that the second connecting portion has a thickness that gradually decreases from both ends toward the center .
前記第2連結部は、外周及び内周は円弧形状であり、外周の中心角より内周の中心角の方が大きいことを特徴とする請求項16に記載の圧電素子。 17. The piezoelectric element according to claim 16 , wherein the second connecting portion has an arc shape on the outer periphery and the inner periphery, and the central angle of the inner periphery is larger than the central angle of the outer periphery. 前記第2連結部は、前記第2連結部が接続された前記一対の第2導電性基板の間に配置された前記第1導電性基板の側部から離隔して形成されていることを特徴とする請求項16または17に記載の圧電素子。 The second connection part is formed apart from a side part of the first conductive substrate disposed between the pair of second conductive substrates to which the second connection part is connected. The piezoelectric element according to claim 16 or 17 . 前記第2連結部の表面に第2絶縁層が形成されていることを特徴とする請求項16〜18のうちのいずれか1つに記載の圧電素子。 The piezoelectric element according to any one of claims 16 to 18 , wherein a second insulating layer is formed on a surface of the second connecting portion. 前記第2絶縁層は、前記第2連結部の表面のうち、前記第1導電性基板に対面する内表面に形成されていることを特徴とする請求項19に記載の圧電素子。 The piezoelectric element according to claim 19 , wherein the second insulating layer is formed on an inner surface of the surface of the second coupling portion that faces the first conductive substrate. 前記第2絶縁層は、前記第2連結部の外表面に形成されていることを特徴とする請求項19又は20に記載の圧電素子。 The piezoelectric element according to claim 19 or 20 , wherein the second insulating layer is formed on an outer surface of the second connecting portion. 前記第2絶縁層の厚みが前記第2連結部の厚みよりも薄いことを特徴とする請求項1621のうちのいずれか1つに記載の圧電素子。 The piezoelectric element according to any one of claims 16 to 21 , wherein a thickness of the second insulating layer is thinner than a thickness of the second connecting portion. 前記第2絶縁層が前記圧電体層と同じ材料からなることを特徴とする請求項1622のうちのいずれか1つに記載の圧電素子。 The piezoelectric element according to any one of claims 16 to 22 , wherein the second insulating layer is made of the same material as that of the piezoelectric layer. 前記第1連結部は、外周及び内周は円弧形状であり、外周の中心角より内周の中心角の方が大きいことを特徴とする請求項1423のうちのいずれか1つに記載の圧電素子。 The first connection part, the outer periphery and the inner periphery an arc shape, according to any one of claims 14 to 23, characterized in that the larger inner circumference of the central angle than the central angle of the outer periphery Piezoelectric element. 前記第1連結部は、前記第1連結部が接続された前記第1導電性基板の間に配置された前記第2導電性基板の側部から離隔して形成されていることを特徴とする請求項1424のうちのいずれか1つに記載の圧電素子。 The first connection part is formed apart from a side part of the second conductive substrate disposed between the first conductive substrates to which the first connection part is connected. The piezoelectric element according to any one of claims 14 to 24 . 前記第1連結部の表面に第1絶縁層が形成されていることを特徴とする請求項1425のうちのいずれか1つに記載の圧電素子。 The piezoelectric element according to any one of claims 14 to 25 , wherein a first insulating layer is formed on a surface of the first connecting portion. 前記第1絶縁層は、前記第1連結部の表面のうち、前記第2導電性基板に対面する内表面に形成されていることを特徴とする請求項26に記載の圧電素子。 27. The piezoelectric element according to claim 26 , wherein the first insulating layer is formed on an inner surface of the surface of the first connecting portion facing the second conductive substrate. 前記第1絶縁層は、前記第1連結部の外表面に形成されていることを特徴とする請求項26又は27に記載の圧電素子。 The first insulating layer, piezoelectric element according to claim 26 or 27, characterized in that formed on the outer surface of the first connection part. 前記第1絶縁層の厚みが、前記第1連結部の厚みよりも薄いことを特徴とする請求項1428のうちのいずれか1つに記載の圧電素子。 The piezoelectric element according to any one of claims 14 to 28 , wherein a thickness of the first insulating layer is thinner than a thickness of the first connecting portion. 前記第1絶縁層が前記圧電体層と同じ材料からなることを特徴とする請求項2629のうちのいずれか1つに記載の圧電素子。 30. The piezoelectric element according to any one of claims 26 to 29 , wherein the first insulating layer is made of the same material as the piezoelectric layer. 請求項1〜30のうちのいずれか1つに記載の圧電素子と、この圧電素子が内部に配置されたハウジングとを備えたことを特徴とする圧力センサ。 Pressure sensor comprising: the piezoelectric element according, and a housing which the piezoelectric element is disposed within any one of claims 1 to 30.
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