JP5501503B2 - Photoelectric conversion device and imaging system using the same - Google Patents

Description

  This case relates to a configuration of element isolation of a photoelectric conversion device having a plurality of photoelectric conversion units and a plurality of charge holding units.

  In recent years, CCD-type and MOS-type photoelectric conversion devices are used in many digital still cameras and digital camcorders. In the MOS type photoelectric conversion device, an element structure has been developed for realizing a global shutter function for keeping the accumulation time of the photoelectric conversion unit constant. That is, the photoelectric conversion unit has a charge holding unit. Patent Document 1 discloses a configuration having an element isolation portion having a LOCOS structure in the configuration having the charge holding portion. Patent Document 2 discloses a configuration in which a gap is provided so as to surround the charge holding unit in order to reduce the incidence of light on the charge holding unit in the configuration having the charge holding unit. .

JP 2007-053217 A JP 2007-157912 A

  The inventors of the present application have found that, in the structure of Patent Document 1, when light is incident on the element separation portion, light is diffusely reflected in the element separation portion and light is incident on the charge holding portion. In Patent Document 2, although light incidence near the wiring layer has been studied, as in Patent Document 1, the effect on the charge holding portion when light is incident on the element isolation portion has been studied. There wasn't. However, in the element isolation part, it is necessary to consider not only the influence of light but also the electrical characteristics such as breakdown voltage and parasitic MOS. In view of the above, an object of the present invention is to provide a photoelectric conversion device that has a high withstand voltage and reduces the mixing of charges from the element isolation unit to the charge holding unit.

A photoelectric conversion device according to one aspect of the present invention includes a plurality of photoelectric conversion units each including a first semiconductor region of a first conductivity type, and a first that holds charges generated in the first photoelectric conversion unit. A plurality of charge holding portions each including a second semiconductor region of a first conductivity type that holds a charge generated in a corresponding photoelectric conversion portion among the plurality of photoelectric conversion portions, and A plurality of amplifying units including a floating diffusion unit to which the charge of the charge holding unit is transferred, outputting a signal based on the charge transferred to the floating diffusion unit, and a second conductive type third semiconductor region A first element isolation portion; a second element isolation portion using an insulator; and the second element isolation portion. The first semiconductor region, the second semiconductor region, and the third semiconductor. An active region to which the region is disposed, and the active region The first semiconductor region included in one of the plurality of photoelectric conversion units, and the second semiconductor region included in the charge holding unit corresponding to the first region, and the active region In the second region, the first semiconductor region included in another one of the plurality of photoelectric conversion units, and the second semiconductor region included in the charge holding unit corresponding to the other one The first region and the second region are arranged adjacent to each other via the third semiconductor region without the second element isolation portion being arranged between them. A charge holding unit corresponding to one of the plurality of photoelectric conversion units, or a charge holding unit corresponding to another one of the plurality of photoelectric conversion units, and one of the plurality of amplification units, A part of the second element isolation portion is arranged .

  According to the present invention, in the photoelectric conversion device, it is possible to reduce the mixing of charges from the element isolation unit to the charge holding unit while having a withstand voltage.

Example of pixel circuit of photoelectric conversion device 1 is a schematic plan view of a photoelectric conversion device for explaining a first embodiment. Cross-sectional schematic diagram along line AB and CD in FIG. 1 is a schematic plan view of a photoelectric conversion device for explaining a first embodiment. Schematic cross-sectional view taken along lines EF and GH in FIG. Plane schematic diagram and cross-sectional schematic diagram of a photoelectric conversion device for explaining the first embodiment Another example of pixel circuit of photoelectric conversion device Block diagram explaining the imaging system

  The present invention provides a photoelectric conversion device having a charge holding unit in an imaging region, wherein the element isolation unit for the charge holding unit is a first element isolation unit using a PN junction and a second element isolation using an insulator. Part. The second element isolation portion is disposed between the charge holding portion and at least some of the plurality of transistors. The first element isolation unit reduces the influence of irregular reflection that occurs in the element isolation unit using the oxide film, and the second element isolation unit is disposed between the charge holding unit and the transistor, whereby the readout circuit It is possible to maintain the withstand voltage between the charge holding portion and the charge holding portion.

  Hereinafter, embodiments will be described with reference to the drawings. The description will be made assuming that the signal charge is an electron.

(First embodiment)
First, an example of a pixel circuit of a photoelectric conversion device having a charge holding portion is described with reference to FIG. FIG. 1 shows a configuration in which pixels 13 having charge holding portions are arranged in two rows and two columns. 2 is a photoelectric conversion unit, 3 is a charge holding unit, 4 is a floating diffusion unit, 5 is a power supply unit, 7 is a pixel output unit, 8 is a first transfer gate electrode, and 9 is a second gate electrode. Reference numeral 10 denotes a reset transistor gate electrode, 11 denotes a selection transistor gate electrode, 12 denotes an amplification transistor gate electrode, and 23 denotes an overflow drain (hereinafter referred to as OFD) gate electrode serving as a discharge portion. The power supply line is a wiring for supplying a predetermined voltage, and is connected to the power supply unit 5. Here, in the power supply unit 5, the drain of the reset transistor, the drain of the selection transistor, and the drain of the OFD are the same node. RES, TX1, TX2, SEL, and OFD are control lines for supplying a pulse to each gate electrode. RES is the gate electrode 10 of the reset transistor, TX1 is the first gate electrode 8, TX2 is the second gate electrode 9, SEL is the gate electrode 11 of the selection transistor, and OFD is the gate electrode for the overflow drain. 23 is a control line for supplying a pulse to 23. OUT is a signal line. n and m are natural numbers, and indicate a certain row n and its adjacent row n + 1, a certain column m, and its adjacent column m + 1. Here, the pixel 13 has a configuration including one photoelectric conversion unit 2 and is the minimum repeating unit in the configuration of the photoelectric conversion device. An area where a plurality of pixels 13 are arranged is referred to as an imaging area.

  The operation of the global shutter in such a pixel 13 is as follows. After a certain accumulation period elapses, the charge generated in the photoelectric conversion unit 2 is transferred to the charge holding unit 3 by the first gate electrode 8. While the signal holding unit 3 holds signal charges for a certain accumulation period, the photoelectric conversion unit 2 starts to accumulate signal charges again. The signal charge of the charge holding unit 3 is transferred to the floating diffusion unit 4 by the second gate electrode 9 and is output as a signal from the pixel output unit 7 of the amplifying transistor. Also, the OFD 23 may discharge the charge of the photoelectric conversion unit 2 so that the charge generated in the photoelectric conversion unit 2 is not mixed into the charge holding unit 3 while the signal charge is held in the charge holding unit 3. is there. The resetting transistor sets the floating diffusion unit 4 to a predetermined potential before the signal charge is transferred from the charge holding unit 3 (reset operation). The potential of the floating diffusion unit 4 at this time is output from the pixel output unit 7 as a noise signal, and the noise signal can be removed by taking a difference from a signal based on a signal charge output later.

  In the pixel 13, the lower part of the first gate electrode 8 may be a buried channel. That is, the photoelectric conversion unit 2 and the charge holding unit 3 are electrically connected. The operation of the global shutter having such a configuration is as follows. The signal charge generated in the photoelectric conversion unit 2 is held by the photoelectric conversion unit 2 and the charge holding unit 3. Then, after a certain accumulation period has elapsed, the signal charge is transferred to the floating diffusion portion 4 by the second gate electrode 9. After the signal charge is transferred to the floating diffusion part 4, the signal charge accumulation starts again in the photoelectric conversion part 2 and the charge holding part 3. Also in this configuration, the OFD 23 discharges the photoelectric conversion unit 2 so that the charge generated in the photoelectric conversion unit 2 is not mixed into the floating diffusion unit 4 while the floating diffusion unit 4 holds the signal charge. There is also a case to let you. The operation of the reset transistor is the same. This operation can be performed by driving the first gate electrode 8 even if the lower portion of the first gate electrode 8 is not a buried channel. In the present embodiment, description will be given taking an example of a configuration that is such a buried channel.

  FIG. 2 is a schematic plan view of the photoelectric conversion device having the pixel configuration as shown in FIG. Pixels 13 are arranged in 2 rows and 2 columns. 13a is a first pixel, 13b is a second pixel, 13c is a third pixel, and 13d is a fourth pixel. Components having the same functions as those in FIG. 1 are denoted by the same reference numerals and description thereof is omitted. About each code | symbol a, b, c, and d, it has shown that it is the structure of a 1st pixel, a 2nd pixel, a 3rd pixel, and a 4th pixel, respectively. For the sake of explanation, the arrangement of wirings other than contacts and gate electrodes is omitted. In FIG. 1, portions that are common nodes may be the same semiconductor region or may be connected by wiring.

  In FIG. 1, reference numerals 1 and 14 denote element isolation portions. Reference numeral 14 denotes a first element isolation part using a PN junction in the semiconductor region, and 1 denotes a second element isolation part using an insulator. A portion other than the second element isolation portion 1 is an active region, and each element is formed.

  Description will be made by paying attention to the first pixel 13a. The first gate electrode 8a is arranged to extend to the upper part of the charge holding portion 3a. Since the first gate electrode 8a is arranged up to the upper portion of the charge holding unit 3a, the incidence of light on the charge holding unit 3a is reduced, and the voltage supplied to the first gate electrode 8a is controlled. Thus, it is possible to reduce the dark current of the charge holding unit 3a. Here, the charge holding unit 3 a includes a first element isolation unit 14 and a second element isolation unit 1. A first element separation unit 14 is disposed between adjacent photoelectric conversion units 2 (not shown). That is, for example, the first element separation unit 14 is disposed between the charge holding unit 3b of the second pixel 13c and the charge holding unit 3a of the first pixel 13a. The configuration of such an element isolation portion will be described in more detail with reference to the schematic cross-sectional view of FIG. Hereinafter, the n-type will be described as the first conductivity type.

  3A is a schematic cross-sectional view taken along the line AB in FIG. 2, and FIG. 3B is a schematic cross-sectional view taken along the CD line in FIG. 3A and 3B, reference numeral 21 denotes a well. The well 21 may be n-type or p-type, and may be configured on a semiconductor substrate or a semiconductor substrate. Reference numeral 16 denotes a first conductivity type first semiconductor region, and reference numeral 17 denotes a first conductivity type second semiconductor region. These constitute the photoelectric conversion unit 2. Reference numeral 18 denotes a third semiconductor region of the first conductivity type, which constitutes the charge holding unit 3. Reference numeral 19 denotes a fourth semiconductor region of the second conductivity type, which can function as a barrier that reduces the entry of electrons into the charge holding unit 3. A light shielding film 20 reduces the incidence of light on the charge holding unit 3. The light shielding film 20 is omitted in FIG. Reference numeral 22 denotes a second conductivity type semiconductor region, which constitutes the first element isolation portion 14 that performs electrical isolation from the surrounding semiconductor region by a PN junction. The semiconductor region 14 of the second conductivity type has a higher impurity concentration of the second conductivity type than the surrounding semiconductor region, that is, has a high potential for signal charges. Reference numeral 23 denotes an insulator, which constitutes the second element isolation portion 1. The second element isolation unit 1 has a LOCOS structure (Local oxidation of Silicon) or an STI structure (Shallow trench isolation). Reference numeral 15 denotes a fifth semiconductor region of the second conductivity type, which can function as a channel stop and as a barrier against electrons. Further, the fifth semiconductor region 15 may have a function of preventing dark current due to the provision of the insulator 23. Here, in the present embodiment, a sixth semiconductor region of the first conductivity type is provided between the second semiconductor region 17 and the third semiconductor region 18 (not shown). A buried channel is formed under the first gate electrode 8 by the sixth semiconductor region.

  Here, the problem will be described in detail with reference to FIG. 6A is a schematic plan view corresponding to FIG. 2, and corresponds to the pixel circuit of FIG. 1 as in FIG. FIG. 6B is a schematic cross-sectional view taken along line XY in FIG. The same components as those in FIGS. 1 to 3 are denoted by the same reference numerals and description thereof is omitted. Here, in FIG. 6A, the element isolation part for the charge holding part 3 is only the second element isolation part 1 using an insulator. In the cross section along the XY line at this time, the situation as shown in FIG. Since there is no light shielding film 20 in the photoelectric conversion unit 2a, light easily enters, and light also enters between the photoelectric conversion unit 2a and the charge holding unit 3b. Here, the inventor has found that when light is incident on the second element isolation portion 1, reflection is repeated at the interface between the insulator and the semiconductor substrate 21, and scattered light is generated in various directions. . In some cases, the electrons due to the scattered light are mixed into the signal charges held by the charge holding unit 3b and generate false signals. At this time, when the element isolation portion has an STI structure in which an insulator is provided deeply in the semiconductor substrate, reflection is more likely to occur and scattered light is likely to be generated. In addition, the incidence of light on the element isolation portion may occur not only around the photoelectric conversion portion 2a but also at the break of the light shielding film 20 even when the charge holding portions 3b are arranged.

  On the other hand, in FIG. 3A, the first element separation unit 14 is provided between the charge holding unit 3b of the second pixel 13b and the photoelectric conversion unit 2a of the first pixel 13a. As shown in FIG. 3A, light is likely to enter the photoelectric conversion unit 2a where the light shielding film 20 is not provided. By providing the first element isolation portion 14 at a portion where the amount of incident light is large, the light is transmitted to the deep portion of the well 21 and scattering is reduced. Further, the first element isolation portion 14 can reduce the mixing of electrons generated by light into the third semiconductor region 18b constituting the charge holding portion 3b. Furthermore, the presence of the fourth semiconductor region 19b makes it possible to further reduce the mixing of electrons into the third semiconductor region 18b.

  In FIG. 3B, the second element isolation portion 1 is arranged between at least a part of the plurality of transistors (here, the resetting transistor) and the charge holding portion 3a. The second element isolation unit 1 can sufficiently perform electrical isolation. Note that the transistor is not limited to a reset transistor. The charge holding portion is not required to be the same node as the source region or drain region of the transistor, and may be an amplifying transistor or a selecting transistor. Since a high pulse is supplied to the transistor gate electrode and a high voltage may be supplied to the source region or drain region of the transistor, electrical isolation and breakdown voltage are required. The second element isolation portion may be disposed between the charge holding portion and the semiconductor region for the well contact for fixing the potential of the well. This is because a high potential is applied to the charge holding portion during the reset operation, so that electrical isolation from the semiconductor region for well contact is sufficiently performed.

  Here, the semiconductor region forming the source region or the drain region of the transistor often has a higher impurity concentration than the second semiconductor region 17 constituting the photoelectric conversion portion. When such a semiconductor region having a high impurity concentration is separated by the first element isolation portion, a large electric field is applied to the PN junction interface. Therefore, it is desirable to perform electrical isolation while maintaining the withstand voltage in the second element isolation unit 1. Further, unlike the photoelectric conversion unit 2, a plurality of transistors can be shielded from light, so that the incidence of light on the second element isolation unit 1 can be reduced and the generation of scattered light can be reduced. .

  However, in the second element isolation portion 1 having an insulator, dark current may be generated due to lattice defects at the interface between the insulator and the semiconductor. Therefore, as in the present embodiment, noise is reduced compared to the configuration of FIG. 6 by disposing the first element isolation unit 14 in the vicinity of the charge holding unit 3 that holds signal charges and the photoelectric conversion unit 2. It becomes possible to do.

  In the configuration in which the channel between the photoelectric conversion unit 2 and the charge holding unit 3 is a buried channel as in the present embodiment, the period for holding the signal charge in the charge holding unit 3 becomes long, so This is effective for reducing contamination and dark current. However, the configuration between the photoelectric conversion unit 2 and the charge holding unit 3 is not limited to the configuration of the buried channel. Further, the fourth semiconductor region 19 and the fifth semiconductor region 15 serving as a barrier may not be provided.

(Second Embodiment)
The photoelectric conversion device according to the present embodiment is different from the first embodiment in the planar layout of pixels, and the pixels are arranged in line symmetry. Further, the arrangement of the element isolation portions around the charge holding portion and the photoelectric conversion portion is different. This will be described with reference to FIG.

  FIG. 4 is a schematic plan view of the photoelectric conversion device. 4, the same components as those in FIG. 2 are denoted by the same reference numerals, and description thereof is omitted. For the sake of explanation, wirings other than contacts and gate electrodes and light shielding films are omitted. Although FIG. 4 shows eight pixels 13 in two rows and four columns, the eight pixels in FIG. 4 are repeatedly arranged two-dimensionally as a photoelectric conversion device. Of these, description will be made using four pixels 13a, 13b, 13c, and 13d. In FIG. 4, unlike FIG. 2, the photoelectric conversion units 2 of the first pixel 13a and the third pixel 13c are arranged to face each other. That is, the column of the first pixel 13a and the second pixel 13b and the column of the third pixel 13c and the fourth pixel 13d are arranged in line symmetry. Here, as in the first embodiment, the first element separation unit 14 is disposed between the charge holding unit 3a of the first pixel 13a and the photoelectric conversion unit of an adjacent pixel (not shown). . And the 2nd element isolation | separation part 1 is arrange | positioned between the transistor of the 1st pixel 13a, and the electric charge holding | maintenance part 3a. However, the first element isolation unit 14 is also disposed between the charge holding unit 3a of the first pixel 13a and the charge holding unit 3c of the third pixel 13c. With such a configuration, it is possible to reduce the charge mixed into the charge holding unit 3a as compared with the first embodiment. Further, it is possible to reduce the dark current mixed in the charge holding unit 3a. Further, the photoelectric conversion unit 2a also includes the first element isolation unit 14 between the photoelectric conversion unit 2c of the third pixel 13c. With such a configuration, it is possible to reduce dark current to the photoelectric conversion unit 2a and the photoelectric conversion unit 2c. In addition, since the second element isolation unit 1 is disposed between the transistor and the charge holding unit 3a or the photoelectric conversion unit 2a, it is possible to suppress a decrease in breakdown voltage and generation of a parasitic MOS transistor. . Further, description will be made with reference to a schematic cross-sectional view of FIG.

  5A is a schematic cross-sectional view taken along line EF in FIG. 4, and FIG. 5B is a schematic cross-sectional view taken along line GH in FIG. 5A and 5B, components similar to those in FIGS. 3A and 3B are denoted by the same reference numerals, and description thereof is omitted. 5A has substantially the same configuration as that in FIG. In FIG. 5B, the charge holding unit 3a of the first pixel 13a and the charge holding unit 3c of the third pixel 13c are adjacent to each other and are shielded from light by the same light shielding film 20. By the light shielding film 20, no light is incident between the charge holding unit 3a and the charge holding unit 3c. However, the first element isolation part 14, that is, the semiconductor region 22 of the second conductivity type is arranged instead of the insulator 23 of the second element isolation part 1 in which dark current is likely to occur. With such a configuration, it is possible to reduce dark current to the charge holding unit 3a and the charge holding unit 3c.

  As described above, when the second element isolation unit is arranged by arranging the first element isolation unit also between the charge holding unit of a certain pixel and the charge holding unit of the adjacent pixel. It is possible to reduce the generation of false signals due to the scattering of light that occurs. In addition, it is possible to reduce the mixing of dark current into the charge holding portion. The same applies to the periphery of the photoelectric conversion unit. In addition, by providing the second element isolation portion between the charge holding portion and the transistor, the breakdown voltage can be improved and the generation of parasitic MOS transistors can be reduced. It should be noted that the arrangement of the element isolation portions of this embodiment can be applied to different planar layouts.

(Third embodiment)
In this embodiment, a pixel circuit different from the pixel circuit illustrated in FIG. 1 will be described with reference to FIG. FIG. 7 shows a configuration having the pixel unit 22. The same components as those in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.

  In FIG. 7, 2a is a first photoelectric conversion unit, 2b is a second photoelectric conversion unit 2b, 3a is a first charge holding unit, and 3b is a second charge holding unit. 8a and 9a are a first gate electrode and a second gate electrode corresponding to the first photoelectric conversion unit, and 8b and 9b are a first gate electrode and a second gate corresponding to the second photoelectric conversion unit. Electrode. 23a is a discharge unit corresponding to the first photoelectric conversion unit, and 23b is a discharge unit corresponding to the second photoelectric conversion unit. The first photoelectric conversion unit 2a and the second photoelectric conversion unit 2b share the floating diffusion unit 4, the reset transistor, the selection transistor, and the amplification transistor.

  That is, the pixel circuit in FIG. 7 has a configuration in which the floating diffusion portions 4 of the pixels in the nth row and mth column and the pixels in the n + 1th row and mth column are connected to each other in the pixel circuit in FIG. Further, the reset transistor, the selection transistor, and the amplification transistor are shared. 1 can also be said to be a case where the pixel unit 22 includes one photoelectric conversion unit 2.

  According to such a configuration, the number of elements can be reduced as compared with the configuration in FIG. 1, and thus the area of the charge holding unit and the photoelectric conversion unit can be increased.

  As for the arrangement of the element isolation unit at this time, as shown in the second embodiment, the second element isolation unit is arranged between the charge holding unit and the transistor. It is desirable to arrange in such a place. First, between the charge holding units, for example, between the first charge holding unit 3a and the second charge holding unit 3b or between the first charge holding unit 3a and the charge holding unit of the adjacent pixel unit. is there. Further, between the charge holding unit and the photoelectric conversion unit, for example, between the first charge holding unit 3a and the second photoelectric conversion unit 2b or in the pixel unit adjacent to the first charge holding unit 3a. Between. In this way, by defining the arrangement of the first element isolation part and the second element isolation part as shown in the second embodiment, it is possible to prevent the charge from being mixed into the charge holding part while maintaining the withstand voltage. It becomes possible to reduce.

(Application to imaging system)
In this embodiment, the case where the photoelectric conversion device described in the first embodiment and the third embodiment is applied to an imaging system will be described with reference to FIG. The imaging system is a digital still camera, a digital video camera, or a digital camera for mobile phones.

  FIG. 8 is a block diagram of a digital still camera. An optical image of the subject is formed on the imaging surface of the photoelectric conversion device 804 by an optical system including the lens 802 and the like. On the outside of the lens 802, a barrier 801 serving both as a protection function of the lens 802 and a main switch can be provided. The lens 802 can be provided with a stop 803 for adjusting the amount of light emitted therefrom. The imaging signal output from the photoelectric conversion device 804 through a plurality of channels is subjected to various corrections, clamping, and the like by the imaging signal processing circuit 805. Imaging signals output from the imaging signal processing circuit 805 through a plurality of channels are analog-digital converted by an A / D converter 806. The image data output from the A / D converter 806 is subjected to various corrections, data compression, and the like by a signal processing unit (image processing unit) 807. The photoelectric conversion device 804, the imaging signal processing circuit 805, the A / D converter 806, and the signal processing unit 807 operate in accordance with the timing signal generated by the timing generation unit 808. Each block is controlled by an overall control / arithmetic unit 809. In addition, a memory unit 810 for temporarily storing image data and a recording medium control interface unit 811 for recording or reading an image on a recording medium are provided. The recording medium 812 includes a semiconductor memory or the like and can be attached and detached. Furthermore, an external interface (I / F) unit 813 for communicating with an external computer or the like may be provided. Here, 805 to 808 may be formed on the same chip as the photoelectric conversion device 804.

  Next, the operation of FIG. 8 will be described. When the barrier 801 is opened, the main power supply, the control system power supply, and the image pickup system circuit such as the A / D converter 806 are sequentially turned on. Thereafter, the overall control / arithmetic unit 809 opens the aperture 803 to control the exposure amount. A signal output from the photoelectric conversion device 804 passes through the imaging signal processing circuit 805 and is provided to the A / D converter 806. The A / D converter 806 A / D converts the signal and outputs it to the signal processing unit 807. The signal processing unit 807 processes the data and provides it to the overall control / calculation unit 809, and the overall control / calculation unit 809 performs computation to determine the exposure amount. The overall control / calculation unit 809 controls the aperture based on the determined exposure amount.

  Next, the overall control / calculation unit 809 extracts a high frequency component from the signal output from the photoelectric conversion device 804 and processed by the signal processing unit 807, and calculates the distance to the subject based on the high frequency component. Thereafter, the lens 802 is driven to determine whether or not it is in focus. If it is determined that the subject is not in focus, the lens 802 is driven again to calculate the distance.

  Then, after the in-focus state is confirmed, the main exposure starts. When the exposure is completed, the imaging signal output from the photoelectric conversion device 804 is corrected in the imaging signal processing circuit 805, A / D converted by the A / D converter 806, and processed by the signal processing unit 807. The image data processed by the signal processing unit 807 is accumulated in the memory unit 810 by the overall control / arithmetic unit 809. Thereafter, the image data stored in the memory unit 810 is recorded on the recording medium 812 via the recording medium control I / F unit under the control of the overall control / arithmetic unit 809. Further, the image data is provided to a computer or the like through the external I / F unit 813 and processed.

  Thus, the photoelectric conversion device of the present invention is applied to an imaging system. By using the photoelectric conversion device of the present invention, it is possible to reduce noise to the image signal due to the global shutter, so that a higher quality image can be obtained. Further, noise removal in the signal processing circuit or the like is facilitated.

  In the above, several embodiments of the present invention have been described. However, the present invention is not limited to each embodiment, and can be changed as appropriate. For example, the circuit configuration of the pixel is not limited to the configuration in FIG. Instead of the discharge portion as shown in FIG. 1, the structure may be such that charges are discharged in the vertical direction of the semiconductor substrate. The configuration of the first gate electrode 8 is not limited to the configuration described in the embodiment, and the first gate electrode 8 may not extend to the upper part of the charge holding unit 3. The polarity of the charge, the polarity of the semiconductor region, and the polarity of the transistor can be changed as appropriate.

DESCRIPTION OF SYMBOLS 1 2nd element isolation | separation part 2 Photoelectric conversion part 3 Charge holding part 4 Floating diffusion part 8 1st gate electrode 9 2nd gate electrode 14 1st element isolation part 13 Pixel 22 Pixel unit

Claims (13)

A plurality of photoelectric conversion units each including a first semiconductor region of a first conductivity type ;
A plurality of charge retaining portions, each of the second semiconductor region of the first conductivity type that holds the charges generated in the photoelectric conversion unit includes the corresponding one of the previous SL plurality of photoelectric conversion portions,
A plurality of amplification units including a floating diffusion unit to which charges of the charge holding unit are transferred, and outputting a signal based on the charges transferred to the floating diffusion unit;
A first element isolation portion using a third semiconductor region of the second conductivity type;
A second element isolation portion using an insulator;
An active region that is defined by the second element isolation portion and in which the first semiconductor region, the second semiconductor region, and the third semiconductor region are disposed;
The first semiconductor region included in one of the plurality of photoelectric conversion units and the second semiconductor region included in the charge holding unit corresponding to the one are disposed in the first region of the active region. ,
In the second region of the active region, the first semiconductor region included in another one of the plurality of photoelectric conversion units, and the second semiconductor included in the charge holding unit corresponding to the other one Area is arranged,
The first region and the second region are disposed adjacent to each other via the third semiconductor region without the second element isolation portion being disposed between them.
Between the charge holding unit corresponding to one of the plurality of photoelectric conversion units, or the charge holding unit corresponding to another one of the plurality of photoelectric conversion units, and one of the plurality of amplification units, A portion of the second element isolation portion is disposed;
A photoelectric conversion device characterized by that. A plurality of photoelectric conversion units each including a first semiconductor region of a first conductivity type;
A plurality of charge holding portions each including a first conductivity type second semiconductor region for holding charges generated in a corresponding photoelectric conversion portion among the plurality of photoelectric conversion portions;
A plurality of amplification units including a floating diffusion unit to which charges of the charge holding unit are transferred, and outputting a signal based on the charges transferred to the floating diffusion unit;
A first element isolation portion using a third semiconductor region of the second conductivity type;
A second element isolation portion using an insulator;
An active region that is defined by the second element isolation portion and in which the first semiconductor region, the second semiconductor region, and the third semiconductor region are disposed;
The active region is divided into a plurality of regions by the third semiconductor region,
In each of the plurality of regions, the first semiconductor region included in one of the plurality of photoelectric conversion units and the second semiconductor region included in the charge holding unit corresponding to the one are arranged,
A part of the second element isolation unit is disposed between a charge holding unit corresponding to one of the plurality of photoelectric conversion units and one of the plurality of amplification units.
A photoelectric conversion device characterized by that. The photoelectric conversion device
A well in which the second semiconductor region is disposed;
A semiconductor region disposed in contact with a contact plug for supplying a potential to the well;
Part of the second isolation portion is arranged between said plurality of one semiconductor region disposed in contact with said contact plug of the charge holding portion,
The photoelectric conversion device according to claim 1 or 2 , wherein The photoelectric conversion device may have at least includes a plurality of transistors, the transistors constituting the amplifying unit,
Part of the second isolation portion is arranged between at least a portion of one said plurality of transistors of said plurality of charge storage part,
The photoelectric conversion device according to any one of claims 1 to 3, wherein the photoelectric conversion device is provided. Wherein the plurality of transistors comprises a reset to Brighter set transistor a voltage of the floating diffusion portion,
The photoelectric conversion device according to claim 4.   The photoelectric conversion device according to claim 1, wherein the plurality of charge holding units are shielded from light. Said first isolation portion, arranged between the two charge holding portions before Symbol contact next plurality of Chi sac charge holding portion,
The photoelectric conversion device according to any one of claims 1 to 5, wherein the photoelectric conversion device is provided. Any said first isolation portion, and the one of the plurality of charge retaining portion, of claims 1 to 7, characterized in that arranged between the one of the plurality of photoelectric conversion units A photoelectric conversion device according to claim 1. And one of said plurality of photoelectric conversion unit, to have a gate electrode on the region between the charge holding unit corresponding to the one,
The photoelectric conversion device according to any one of claims 1 to 8, wherein the photoelectric conversion device is provided. The gate electrode extends over the second semiconductor region;
The photoelectric conversion device according to claim 8. The fourth semiconductor region of the second conductivity type is arranged below the second semiconductor region,
It said fourth semiconductor region, a photoelectric conversion device according to any one of claims 1 to 10, characterized in that it functions as a barrier to reduce the contamination of the charge to the second semiconductor region. The photoelectric conversion device according to any one of claims 1 to 11 , wherein the second element isolation portion has an STI structure. The photoelectric conversion device according to any one of claims 1 to 12 ,
An imaging system comprising: a signal processing circuit that processes a signal output from the photoelectric conversion device.

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