JP5451634B2 - フォトニック結晶led - Google Patents
フォトニック結晶led Download PDFInfo
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- JP5451634B2 JP5451634B2 JP2010538986A JP2010538986A JP5451634B2 JP 5451634 B2 JP5451634 B2 JP 5451634B2 JP 2010538986 A JP2010538986 A JP 2010538986A JP 2010538986 A JP2010538986 A JP 2010538986A JP 5451634 B2 JP5451634 B2 JP 5451634B2
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- light emitting
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- 239000004038 photonic crystal Substances 0.000 title claims description 166
- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 11
- 241000208818 Helianthus Species 0.000 claims description 3
- 235000003222 Helianthus annuus Nutrition 0.000 claims description 3
- 239000013079 quasicrystal Substances 0.000 claims description 3
- 239000011295 pitch Substances 0.000 description 15
- 230000005855 radiation Effects 0.000 description 15
- 238000000605 extraction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 210000002858 crystal cell Anatomy 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000002779 inactivation Effects 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
Claims (12)
- 光の生成のために第1タイプの半導体層及び第2タイプの半導体層の間に配置される活性領域の両端に電圧を印加するための第1及び第2電極と、前記光を放射するための光放射面と、前記光放射面及び前記活性領域の間に配置される複数のフォトニック結晶とを有する半導体発光ダイオードであり、前記複数のフォトニック結晶の中から選択される第1及び第2タイプの少なくとも2つのフォトニック結晶が、前記活性領域から光を抽出するよう適合させられ、少なくとも1つの格子定数に関して互いに異なり、前記少なくとも2つのフォトニック結晶の各々が、各々の遠方場パターンと関連し、前記複数のフォトニック結晶の配列が、前記少なくとも2つのフォトニック結晶の各々と関連する前記各々の遠方場パターンを組み合わせることによって、前記発光ダイオードにおいて生成される前記光からの遠方場パターンが作成されるように、前記少なくとも2つのフォトニック結晶を配設するよう設けられ、前記少なくとも2つのフォトニック結晶の各々と関連する前記各々の遠方場パターンのむらが、少なくとも部分的に、重なり合わないようにして、前記少なくとも2つのフォトニック結晶を位置づけるよう、前記配列が配設される半導体発光ダイオードであって、前記第2電極が、前記光放射面と比べて、前記活性領域の反対側に配置されるサブ電極を有し、第1及び第2サブ電極が、各々、前記第1及び第2タイプの各々のフォトニック結晶と関連し、前記第1及び第2サブ電極が、前記第1及び第2サブ電極の各々に各々の電圧を印加することによって個々に制御可能であり、それによって、前記発光ダイオードの前記遠方場パターンが、前記第1タイプのフォトニック結晶からの遠方場パターンと、前記第2タイプのフォトニック結晶からの遠方場パターンとの間の違いにより、動的に制御可能であることを特徴とする半導体発光ダイオード。
- 前記少なくとも1つの格子定数が、格子の向き、格子ピッチ、格子タイプ若しくは充填率のうちの1つ、又はそれらの組み合わせである請求項1に記載の発光ダイオード。
- 前記格子タイプが、六方構造、三角構造、立方構造、ヒマワリの構造又はアルキメデスタイリングのうちの少なくとも1つを有する請求項1乃至2のいずれか一項に記載の発光ダイオード。
- 前記第1タイプの半導体層が、前記活性領域と前記光放射面との間に配置されるN型半導体層であり、前記第2タイプの半導体層が、前記第1タイプの半導体層と比べて、前記活性領域の反対側に配置されるP型半導体層である請求項1乃至3のいずれか一項に記載の発光ダイオード。
- 前記第1タイプの半導体層が、前記活性領域と前記光放射面との間に配置されるP型半導体層であり、前記第2タイプの半導体層が、前記第1タイプの半導体層と比べて、前記活性領域の反対側に配置されるN型半導体層である請求項1乃至3のいずれか一項に記載の発光ダイオード。
- 前記フォトニック結晶が、フォトニック準結晶を含む請求項1乃至5のいずれか一項に記載の発光ダイオード。
- 前記発光ダイオードの前記光放射面が、粗くした領域を含む請求項1乃至6のいずれか一項に記載の発光ダイオード。
- 前記フォトニック結晶が、フォトニック結晶を備える前記発光ダイオードの前記光放射面の少なくとも一部を連続して覆うために互いに隣接して配設される請求項1乃至7のいずれか一項に記載の発光ダイオード。
- 前記サブ電極の大きさ及び形状が、前記各々のフォトニック結晶の大きさ及び形状にマッチする請求項1乃至8のいずれか一項に記載の発光ダイオード。
- 各サブ電極が、前記各々のフォトニック結晶と位置合わせされる請求項1乃至9のいずれか一項に記載の発光ダイオード。
- 前記光放射面と比べて、前記活性領域の反対側に配置される前記第2タイプの半導体層が、サブ素子に分けられ、各サブ素子が、対応するサブ電極と関連する請求項1乃至10のいずれか一項に記載の発光ダイオード。
- 前記光放射面が、マイクロレンズ、色付きの領域、発光材料で覆われる領域又はそれらの組み合わせのうちの少なくとも1つを有する請求項1乃至11のいずれか一項に記載の発光ダイオード。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07123466.0 | 2007-12-18 | ||
EP07123466 | 2007-12-18 | ||
PCT/IB2008/055249 WO2009081314A1 (en) | 2007-12-18 | 2008-12-12 | Photonic crystal led |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011507302A JP2011507302A (ja) | 2011-03-03 |
JP5451634B2 true JP5451634B2 (ja) | 2014-03-26 |
Family
ID=40513949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010538986A Active JP5451634B2 (ja) | 2007-12-18 | 2008-12-12 | フォトニック結晶led |
Country Status (8)
Country | Link |
---|---|
US (1) | US8536600B2 (ja) |
EP (1) | EP2225781B1 (ja) |
JP (1) | JP5451634B2 (ja) |
KR (1) | KR101584102B1 (ja) |
CN (1) | CN101904020B (ja) |
RU (1) | RU2488194C2 (ja) |
TW (1) | TWI472054B (ja) |
WO (1) | WO2009081314A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5538766B2 (ja) * | 2009-07-28 | 2014-07-02 | キヤノン株式会社 | 画像表示装置 |
JP2011138631A (ja) * | 2009-12-25 | 2011-07-14 | Canon Inc | 画像表示装置 |
JP5721422B2 (ja) * | 2010-12-20 | 2015-05-20 | キヤノン株式会社 | 面発光レーザ及びアレイ光源 |
TWI543386B (zh) | 2011-03-28 | 2016-07-21 | 財團法人工業技術研究院 | 圓形光子晶體結構、發光二極體元件以及光電轉換元件 |
CN103682051A (zh) * | 2012-08-30 | 2014-03-26 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
KR101466833B1 (ko) * | 2013-07-08 | 2014-11-28 | 코닝정밀소재 주식회사 | 유기발광소자용 광추출 기판, 그 제조방법 및 이를 포함하는 유기발광소자 |
KR101529817B1 (ko) * | 2014-02-25 | 2015-06-17 | 성균관대학교산학협력단 | 이중 광자결정 구조를 포함하는 발광 다이오드 |
CN107851684B (zh) * | 2015-03-13 | 2020-03-24 | 陶氏环球技术有限责任公司 | 纳米结构材料方法及装置 |
FR3068173B1 (fr) * | 2017-06-27 | 2020-05-15 | Aledia | Dispositif optoelectronique |
DE102018103604B4 (de) * | 2018-02-19 | 2022-03-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauteil, Optoelektronische Vorrichtung, Blitzlicht und Scheinwerfer |
JP7105441B2 (ja) * | 2018-07-26 | 2022-07-25 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6936854B2 (en) * | 2001-05-10 | 2005-08-30 | Canon Kabushiki Kaisha | Optoelectronic substrate |
DE10331906B4 (de) * | 2003-07-15 | 2005-06-16 | Leica Microsystems Heidelberg Gmbh | Lichtquelle mit einem Mikrostruktuierten optischen Element und Mikroskop mit Lichtquelle |
US20050173714A1 (en) * | 2004-02-06 | 2005-08-11 | Ho-Shang Lee | Lighting system with high and improved extraction efficiency |
US7768023B2 (en) * | 2005-10-14 | 2010-08-03 | The Regents Of The University Of California | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
US7582910B2 (en) * | 2005-02-28 | 2009-09-01 | The Regents Of The University Of California | High efficiency light emitting diode (LED) with optimized photonic crystal extractor |
US7442964B2 (en) * | 2004-08-04 | 2008-10-28 | Philips Lumileds Lighting Company, Llc | Photonic crystal light emitting device with multiple lattices |
JP4773119B2 (ja) * | 2004-09-03 | 2011-09-14 | 国立大学法人京都大学 | 光ピンセット及び2次元フォトニック結晶面発光レーザ光源 |
US7509012B2 (en) * | 2004-09-22 | 2009-03-24 | Luxtaltek Corporation | Light emitting diode structures |
US20060204865A1 (en) * | 2005-03-08 | 2006-09-14 | Luminus Devices, Inc. | Patterned light-emitting devices |
WO2006110535A2 (en) * | 2005-04-07 | 2006-10-19 | Nanometrics Incorporated | Apparatus and methods for scatterometry of optical devices |
US8163575B2 (en) * | 2005-06-17 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Grown photonic crystals in semiconductor light emitting devices |
US7173289B1 (en) * | 2005-09-08 | 2007-02-06 | Formosa Epitaxy Incorporation | Light emitting diode structure having photonic crystals |
US7461948B2 (en) * | 2005-10-25 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Multiple light emitting diodes with different secondary optics |
KR100721454B1 (ko) * | 2005-11-10 | 2007-05-23 | 서울옵토디바이스주식회사 | 광 결정 구조체를 갖는 교류용 발광소자 및 그것을제조하는 방법 |
JP2007231390A (ja) * | 2006-03-02 | 2007-09-13 | Fujifilm Corp | エアロゾル生成装置及び方法、並びに、それを用いた成膜装置及び方法 |
KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
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2008
- 2008-12-12 CN CN200880121372.2A patent/CN101904020B/zh active Active
- 2008-12-12 US US12/747,541 patent/US8536600B2/en active Active
- 2008-12-12 JP JP2010538986A patent/JP5451634B2/ja active Active
- 2008-12-12 WO PCT/IB2008/055249 patent/WO2009081314A1/en active Application Filing
- 2008-12-12 KR KR1020107015895A patent/KR101584102B1/ko active IP Right Grant
- 2008-12-12 EP EP08863788.9A patent/EP2225781B1/en active Active
- 2008-12-12 RU RU2010129952/28A patent/RU2488194C2/ru active
- 2008-12-15 TW TW97148801A patent/TWI472054B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN101904020A (zh) | 2010-12-01 |
WO2009081314A1 (en) | 2009-07-02 |
JP2011507302A (ja) | 2011-03-03 |
US20100270572A1 (en) | 2010-10-28 |
EP2225781B1 (en) | 2017-07-12 |
CN101904020B (zh) | 2016-12-28 |
RU2010129952A (ru) | 2012-01-27 |
RU2488194C2 (ru) | 2013-07-20 |
KR101584102B1 (ko) | 2016-01-12 |
US8536600B2 (en) | 2013-09-17 |
TWI472054B (zh) | 2015-02-01 |
EP2225781A1 (en) | 2010-09-08 |
KR20100097218A (ko) | 2010-09-02 |
TW200937687A (en) | 2009-09-01 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |