JP5437715B2 - Active gas generating apparatus and remote plasma type film forming apparatus - Google Patents

Description

  According to the present invention, an active gas generating apparatus capable of generating an active gas (discharge gas) from a raw material gas, and the generation of the active gas and the film forming process using the active gas can be executed by separate apparatuses. The present invention relates to a remote plasma type film forming apparatus.

  In the manufacture of semiconductor devices, plasma devices are often used. For example, in a CVD (Chemical Vapor Deposition) apparatus, a plasma CVD apparatus has an advantage that a film forming temperature can be lowered than a thermal CVD apparatus. Further, the film forming process using plasma is not limited to CVD, but includes plasma nitriding, plasma oxidation, ALD (Atomic Layer Deposition), and the like.

For example, when a nitride film (SiON, HfSiON, etc.) constituting a gate insulating film or the like is formed on a semiconductor substrate, the following techniques are generally employed. That is, radical nitrogen (active nitrogen gas) is generated by using plasma of a gas such as NH ₃ (ammonia) or N ₂ . Then, the semiconductor substrate is exposed to the radical nitrogen in the apparatus in which the radical nitrogen is generated.

  However, when the above technique is employed, the semiconductor substrate is directly exposed to plasma, which causes a problem of damaging the semiconductor substrate.

  Therefore, as a prior art that can reduce damage to a semiconductor substrate (material to be processed) due to the plasma, there are remote plasma type film forming processing apparatuses (for example, Patent Documents 1 and 2).

  In Patent Document 1, a plasma generation region and a material processing region are separated by a partition wall (a plasma confining electrode. Specifically, in Patent Document 1, a high-frequency application electrode and a counter electrode on which a substrate is installed) By providing the plasma confining electrode in between, only the neutral active species is taken out onto the substrate.

  In Patent Document 2, a source gas is activated by plasma in a remote plasma source. Here, the gas flow path is circulated in the remote plasma source. The active gas generated in the remote plasma source is released and supplied to the reaction chamber of the material to be processed through the supply path.

JP 2001-135628 A JP 2004-1111739 A

  However, in the case of Patent Document 1, suppression of plasma damage to the material to be processed is not complete, and the apparatus configuration is complicated. On the other hand, in the case of Patent Document 2, the active gas generated in the remote plasma source circulates in the remote plasma source and reaches the reaction chamber of the material to be processed through the supply path. That is, it takes a long distance for the active gas to reach the material to be processed. Therefore, since the lifetime of the active gas is short, the active gas cannot be efficiently supplied to the reaction chamber.

  In addition, the ozone generator described in Unexamined-Japanese-Patent No. 2003-160309 can be utilized as a plasma production | generation area | region in a remote plasma type film-forming processing apparatus. However, in the case of the technique according to the patent document, the gas path is extended to the manifold block in the lateral direction inside the entire electrode, and is sent out from the gas outlet at the lower part of the apparatus. Accordingly, since the active gas (ozone) transmission path requires a long distance, the active gas cannot be efficiently supplied to the reaction chamber as described above.

  Therefore, an object of the present invention is to provide an active gas generating device having a simple configuration that can completely eliminate damage to a material to be processed and can efficiently extract active gas. Furthermore, it aims at providing the remote plasma type | mold film-forming processing apparatus comprised from the said active gas production | generation apparatus and the film-forming processing apparatus.

The active gas generator according to claim 1 of the present invention includes at least one or more electrode cells, a power supply unit that applies an AC voltage to the electrode cells, a casing that surrounds the electrode cells, A source gas supply unit that is formed and supplies source gas into the casing from the outside, and the electrode cell includes a first electrode and a second electrode having a dielectric. The first electrode faces the second electrode across the dielectric and a space gap, and a gas extraction portion is formed in a central region in plan view of the electrode cell.
Furthermore, the planar view shapes of the first electrode and the second electrode in a range where the first electrode and the second electrode face each other are circular.
Further, the electrode cell includes two second electrodes, and the first main surface of the first electrode is separated from the dielectric and space gap of one of the second electrodes. The second main surface of the first electrode is separated from the dielectric of the other second electrode by a space gap and the second second surface of the first electrode. It faces the other electrode.
Furthermore, the electrode cells are a plurality, each of said electrode cells are arranged in a stacked state, it communicates with the said gas extraction portion provided in each of the electrode cell, the stack in the center of the electrode cell A gas passage pipe extending in the direction is further provided.
Further, the gas extraction portions provided in each of the electrode cells are plural, and each of the gas extraction portions is a gas flow provided on the first main surface and the second main surface of the first electrode. An inlet, and a gas flow path portion disposed in the first electrode and spirally connected between the gas inlet and the gas passage pipe.
Then, by applying the AC voltage to the electrode cell by the power supply unit, a dielectric barrier discharge is generated in the space gap, and the source gas is excited by the plasma by the dielectric barrier discharge, so that the active gas Is generated.

The remote plasma film forming apparatus according to claim 20 , wherein the active gas generating apparatus according to any one of claims 1 to 19 , wherein the active gas is generated by exciting a source gas with plasma, and the active gas is generated. A processing apparatus that can be attached to the active gas generation apparatus below the gas generation apparatus, and that forms a predetermined film on an object to be processed disposed inside using the gas delivered from the gas extraction unit. Have.

  In order to achieve the above object, in the active gas generator according to claim 1 of the present invention, the first electrode faces the second electrode with a dielectric and a space gap therebetween. And the gas extraction part is formed in the center area | region in planar view of an electrode cell.

  Therefore, the active gas generated from the source gas is not propagated across to the end of the electrode cell, but is only propagated to the central region of the electrode cell. That is, the active gas generated in the electrode cell can be taken out from the active gas take-out portion at a very short distance. Therefore, excessive attenuation of the generated active gas can be suppressed as much as possible while fully utilizing the discharge region of the electrode cell.

  In the active gas generation apparatus, active gas is generated from a raw material gas using high-frequency plasma generated by dielectric barrier discharge in an electrode cell. Therefore, atmospheric pressure discharge is possible, and there is no need to evacuate the casing of the active gas generator. Thereby, the active gas production | generation apparatus which is a simple structure can be provided.

Further, in the remote plasma type film forming apparatus of the twentieth aspect , the active gas generating apparatus and the processing apparatus are separate apparatuses. That is, the plasma generation region and the reaction processing region are separated.

  Therefore, it is possible to prevent ions generated by ionization in the plasma generation region from colliding with the material to be processed disposed in the processing region. Thereby, the damage by the plasma with respect to a to-be-processed material can be eliminated completely. In addition, it is possible to realize a compact processing apparatus and an inexpensive remote plasma type film forming processing apparatus.

1 is a cross-sectional view showing a configuration of an active gas generation device according to Embodiment 1. FIG. It is a disassembled perspective view which shows the structure of an electrode cell. It is a perspective view which shows the structure of a 1st electrode. It is a figure for demonstrating the principle of dielectric barrier discharge. It is a figure for demonstrating the principle of dielectric barrier discharge. 6 is a cross-sectional view showing a configuration of an active gas generation device according to Embodiment 3. FIG. 6 is a cross-sectional view showing a configuration of an active gas generation device according to Embodiment 4. FIG. FIG. 9 is a cross-sectional view showing a configuration of an active gas generation device according to Embodiment 5. FIG. 10 is a cross-sectional view showing a configuration of an active gas generation device according to Embodiment 6. It is a disassembled perspective view which shows the structure of a radiation plate.

  Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.

<Embodiment 1>
FIG. 1 is a diagram schematically showing a cross-sectional configuration of an active gas generation apparatus 700 according to the present embodiment. FIG. 2 is an exploded perspective view showing a configuration of a region P surrounded by a dotted line in FIG. FIG. 3 is a perspective view showing the configuration of the first electrode 1 shown in FIGS. The configuration of the active gas generation apparatus 700 according to the present embodiment will be described with reference to FIGS.

  Here, in the present specification, a configuration in which the first electrode 1 and the second electrode 2 having a dielectric face each other via a space gap (discharge space) is referred to as electrode cells 1 and 2. . Further, the configuration (5, 4, 3, 2, 1) from the high-pressure cooling plate 5 to the first electrode 1 in the vertical direction in FIG. Furthermore, the configuration (5, 4, 3, 2, 1, 2, 3, 4, 5) from the high-pressure cooling plate 5 to the other high-pressure cooling plates 5 in the vertical direction in FIG. Called.

  First, the overall configuration of the active gas generator 700 will be described with reference to FIG.

  As shown in FIG. 1, the casings 16 and 161 constituting the active gas generation apparatus 700 are configured by an apparatus base 16 and a chamber 161. The device base 16 is covered with a chamber 161 and is blocked from the outside. In other words, the inside of the housings 16 and 161 is airtight.

  In the configuration illustrated in FIG. 1, three pairs of discharge unit pairs 5 to 5 are installed in the housings 16 and 161. And the discharge unit pairs 5-5 of the said laminated structure are installed on the apparatus base 16. FIG. In other words, in the active gas generation apparatus 700 according to the present invention, at least one or more electrode cells 1 and 2 are disposed in the casings 16 and 161 so as to be surrounded by the casings 16 and 161. Here, in the configuration illustrated in FIG. 1, six electrode cells 1 and 2 are disposed in the casings 16 and 161 in a state of being stacked in the vertical direction in FIG. 1.

  In addition, a coolant (for example, coolant) is taken in from a coolant inlet / outlet part 19 provided in the apparatus base 16, and is connected to the inside of each first electrode 1 and each high-pressure cooling plate 5 via the connection block 9. It is guided to the inside and then discharged from the coolant inlet / outlet part 19 again.

  An O-ring 11 is provided between the first electrode 1 and the connection block 9 (see FIGS. 1 and 2). An O-ring 11 is also provided between the high-pressure cooling plate 5 and the connecting block 9 (see FIG. 1). The high pressure cooling plate 5 -the connection block 9 -the first electrode 1 -the connection block 9 -the high pressure cooling plate 5 are stacked in the vertical direction of FIG. Then, the stacks are integrally fixed so as to be pressed against the device base 16 using the coolant distribution cell fastening bolts 13.

  As a result, the coolant flowing from the coolant inlet / outlet part 19 circulates only in the airtight coolant channel in the connection block 9, the high-pressure cooling plate 5, and the first electrode 1, and in the housings 16, 161. It does not leak into areas other than the coolant channel.

The source gas is supplied from the outside into the casings 16 and 161 from the source gas supply unit 20 provided on the apparatus base 16. As the source gas, for example, nitrogen gas or nitrogen compound gas (NH ₃ , NO _2, etc.) is supplied from the source gas supply unit 20. Alternatively, for example, oxygen gas or oxygen compound gas (such as ozone, water vapor, or NO ₂ ) is supplied from the source gas supply unit 20 as the source gas.

  The raw material gas supplied into the casings 16 and 161 and filled in the casings 16 and 161 is formed in the electrode cells 1 and 2 from the outer peripheral direction of the electrode cells 1 and 2 having a circular shape. It penetrates into the space gap (discharge space) 100. Here, the space gap (discharge space) 100 (that is, the distance between the first electrode 1 and the second electrode 2) is 0.05 mm or more and 2.0 mm or less.

By the way, when a voltage is applied to the electrode cells 1 and 2, a discharge column Ha is generated in the discharge space 100 as shown in FIG. Therefore, an AC high voltage (for example, Vop = 3 kV, 10 kHz) is applied to the electrode cells 1 and 2 by the AC power supply unit 17. As a result, as shown in FIG. 5, dielectric barrier discharge (silent discharge) is uniformly formed in each discharge space 100 in each electrode cell 1, 2. As shown in FIG. 5, the dielectric barrier discharge (plasma density of 10 ⁹ to 10 ¹¹ pieces / cm ³ ) excites the source gas that has entered each discharge space 100 to generate an active gas (radical gas). The The density of the generated active gas is about 10 ¹⁴ to 10 ¹⁸ pieces / cm ³ . Here, FIGS. 4 and 5 illustrate a part of the electrode cells 1 and 2.

  The active gas generated in each of the electrode cells 1 and 2 is discharged from the central region of each of the electrode cells 1 and 2 having a circular shape in plan view, and merges in the gas passage tube 21 existing at the center of each of the electrode cells 1 and 2. (See FIG. 1). The configuration of the gas passage pipe 21 is as follows.

  An O-ring 10 is provided between the insulating plate 4 and the ring 7 (see FIG. 1). An O-ring 10 is also provided between the second electrode 2 and the ring 7 (see FIGS. 1 and 2). Each electrode cell 1 and 2 (or the discharge unit pair same view) are laminated | stacked on the up-down direction of FIG. 1, and the gas passage pipe | tube 21 is formed (refer FIG. 1).

  That is, in the central part of each discharge unit pair 5 to 5, in the vertical direction of FIG. 1, the high-pressure cooling plate 5 -insulating plate 4 -ring 7 -second electrode 2 -spacer 6 -first electrode 1 -spacer 6 -The second electrode 2-ring 7-insulating plate 4-high pressure cooling plate 5 are stacked in this order.

  Then, the stacks are integrally fixed to the device base 16 through the O-ring 10 using the electrode cell fastening bolts 12. A fastening plate 8 is interposed between the upper part of the laminate and the electrode cell fastening bolt 12. By the tightening, the inside of the gas passage pipe 21 is hermetically sealed and separated from the space other than the gas passage pipe 21 in the housings 16 and 161.

  As can be seen from the above description, the gas passage tube 21 extends in the stacking direction at the center of each of the discharge unit pairs 5 to 5 (in other words, the electrode cells 1 and 2). Further, the side surface portion of the gas passage pipe 21 includes a high pressure cooling plate 5-an insulating plate 4-a ring 7-a second electrode 2-a spacer 6-a first electrode 1-a spacer 6-a second electrode 2- ring 7- The insulating plate 4 is composed of a high-pressure cooling plate 5.

  The active gas merged in the gas passage pipe 21 is discharged to the outside of the housings 16 and 161 from the gas blowing plate 14 provided on the apparatus base 16 which is an end portion of the gas passage pipe 21. Immediately below the gas blowing plate 14 is a material 18 to be processed disposed in a processing apparatus (not shown). By applying an active gas to the material 18 to be processed, a predetermined surface treatment (film formation process) can be performed on the material 18 to be processed.

  The processing apparatus (not shown) can be attached to the active gas generation apparatus 700 below the active gas generation apparatus 700. In addition, as described above, the processing apparatus forms a predetermined film on the processing target 18 disposed inside using the active gas delivered from the gas extraction portions 1b and 1d (or the gas passage pipe 21). A device that can be membraned. That is, the active gas generation apparatus 700 and the processing apparatus constitute a remote plasma type film forming processing apparatus.

  Each high-voltage electrode 3 is connected to a high-pressure cooling plate 5 via an insulating plate 4. The insulating plates 4 electrically insulate the housings 16 and 161 from the high voltage electrode 3. Further, as described above, the high voltage electrode 3 is indirectly cooled through the insulating plate 4 by circulating the coolant in the high pressure cooling plate 5 similarly to the first electrode 1.

  Next, a detailed configuration of the electrode cells 1 and 2 will be described with reference to FIG.

  Each electrode cell 1, 2 is composed of a first electrode 1 and a second electrode 2 having a dielectric 2a. Specifically, in the configuration of FIG. 2, two electrode cells 1 and 2 are configured from one first electrode 1 and two second electrodes 2.

  The first electrode 1 faces the second electrode 2 with the dielectric 2a and the discharge space 100 therebetween. Further, gas extraction portions 1b and 1d are formed in the center region of the electrode cells 1 and 2 in plan view. Specific configurations of the electrode cells 1 and 2 are as follows.

  As shown in FIG. 2, the first electrode 1 and the second electrode 2 in a plan view shape in a range where the first electrode 1 and the second electrode 2 face each other (that is, a discharge region where discharge occurs). Is circular.

  On both surfaces of the first electrode 1, spacers 6 having a predetermined pattern are formed. Here, only the spacer 6 formed on one main surface of the first electrode 1 is shown in FIG. 2 for convenience of drawing, and is formed on the other main surface of the first electrode 1. The spacer 6 is not shown.

  Specifically, a plurality of radial spacers 6 and a spacer 6 surrounding the gas passage tube 21 are formed on both surfaces of the first electrode 1. The spacer 6 may be formed by thermal spraying on both main surfaces of the first electrode 1 using a mask having a predetermined pattern. Alternatively, the metal may be formed by simply fixing a predetermined pattern of metal to both main surfaces of the first electrode 1.

  Further, gas extraction portions 1b and 1d are formed in the circular central region of the first electrode plate 1 having a circular shape in plan view. The gas extraction portions 1b and 1d provided in the electrode cells 1 and 2 communicate with a gas passage tube 21 extending in the vertical direction at the center of the circle.

  Further, the first electrode 1 is provided integrally with the first electrode 1 with a portion 1 m serving as an inlet / outlet for the coolant circulating in the first electrode 1. As shown in FIG. 2, the portion 1 m extends from the circular first electrode 1 and is joined to the connecting block 9.

  In addition, the said 1st electrode 1 is comprised from the stainless steel material, aluminum, or aluminum alloy, for example.

  The second electrode 2 is composed of a dielectric 2a and a metal thin film 2d. The dielectric 2 is made of, for example, aluminum oxide or aluminum nitride (the same applies to the ring 7), and the thickness of the dielectric 2 is about 0.3 to 1.0 mm. A metal thin film 2d such as gold is formed on the main surface of the dielectric 2a on the side connected to the high voltage electrode 3. The metal thin film 2d can prevent the occurrence of a gap at the contact portion between the second electrode 2 and the high voltage electrode 3, and can increase the contact area between the second electrode 2 and the high voltage electrode 3.

  In each electrode cell 1, 2, the first electrode 1 is sandwiched by each second electrode 2 through the spacer 6 from the vertical direction. In other words, the first main surface of the first electrode 1 faces the one second electrode 2 with the dielectric 2a and the discharge space 100 included in the one second electrode 2 therebetween. The second main surface of the first electrode 1 faces the other second electrode 2 with the dielectric 2 a and the discharge space 100 included in the other second electrode 2 interposed therebetween.

  That is, the discharge space 100 is formed by separating the first electrode 1 and the second electrode 2 (more specifically, the dielectric 2 a) by the spacer 6. Therefore, the thickness of the spacer 6 is the vertical dimension of the discharge space 100. As described above, since the gap width of the discharge space 100 is desirably 0.05 to 2.0 mm, it can be seen that the thickness of the spacer 6 is preferably 0.05 to 2.0 mm.

  In each electrode cell 1, 2, the second electrode 2 having the dielectric 2 a is in contact with each high-voltage electrode 3. Each high-voltage electrode 3 is connected to one terminal of the AC power supply unit 17 via the electric supply terminal 15 (see FIGS. 1 and 2). As shown in FIG. 1, the other terminal of the AC power supply unit 17 is electrically connected to the first electrode 1 via the device base 16 and the coolant connecting block 9.

  In a connection state with the AC power supply unit 17, an AC high voltage (for example, Vop = 3 kV, 10 kHz) is applied to the electrode cells 1 and 2 by the AC power supply unit 17. Then, as described with reference to FIG. 5, dielectric barrier discharge (silent discharge) is uniformly formed in each discharge space 100 (discharge gap). As described above, the source gas enters the discharge spaces 100 serving as the dielectric barrier discharge field from the outer peripheral direction of the electrode cells 1 and 2 having a circular shape in plan view. Then, the source gas is excited by the high frequency plasma, and an active gas (radical gas) is generated.

  The generated active gas is propagated from the outside of the circular electrode cells 1 and 2 toward the inside (the center of the circle). That is, in the circular electrode cells 1 and 2, the gas (the raw material gas and the generated active gas) propagates in a reverse radial manner. Then, the propagated active gas is sent out to the gas passage pipe 21 via the gas extraction portions 1b and 1d. Since the gas passage pipe 21 is surrounded by the spacer 6, the active gas is always sent to the gas passage pipe 21 via the gas extraction portions 1b and 1d. Here, not only the generated active gas but also the raw material gas that has not been excited by the high-frequency plasma is sent into the gas passage tube 21.

  Next, the configuration of the first electrode 1 will be specifically described with reference to FIG.

  The first electrode 1 and the portion 1m provided integrally with the first electrode 1 are configured by overlapping two electrode plates 1a. Each electrode plate 1a is a thin plate having a thickness of about 1 mm. In each electrode plate 1 a, the spacer 6 is formed on the main surface facing the second electrode 2.

  The surface of each electrode plate 1a on the side where the spacer 6 is not formed is formed with a predetermined pattern of digging by half etching or the like. The depth of the digging is about 0.5 mm. Furthermore, a plurality of through holes are provided near the central region of each electrode plate 1a by full etching or the like. The two electrode plates 1a are overlaid so that the predetermined patterns face each other, and the overlaid surface is brazed or diffusion bonded. Thereby, one first electrode 1 is formed.

  Here, a coolant channel 1r through which the coolant flows is formed inside the first electrode 1 due to the predetermined pattern. Furthermore, due to the predetermined pattern and the through holes, a plurality (five in FIG. 3) of the gas extraction portions 1b and 1d are formed. In FIG. 3, the coolant channel 1 r formed inside the first electrode 1 and a gas channel 1 d described later are outlined by dotted lines.

  The coolant channel 1 r is formed in the first electrode 1 so that the coolant circulates in the first electrode 1. In addition, the said coolant flows in into the 1st electrode 1 from the connection block 9 through the hole 19a of the part 1m, and flows out into the connection block 9 from the inside of the 1st electrode 1 through the hole 19b of the part 1m. . The coolant flowing through the coolant channel 1r can remove the heat generated by the discharge through the first electrode 1 and cool the discharge gas itself. In addition, although illustration is abbreviate | omitted in FIG. 3, the predetermined partition etc. are formed so that a coolant may flow equally into the coolant flow path 1r.

  Here, like the first electrode 1, the coolant is circulated inside the high-pressure cooling plate 5, and the high-pressure generated by the discharge by circulating the coolant inside each high-pressure cooling plate 5. The heat of the electrode 3 can be indirectly absorbed through the insulating plate 4.

  Each gas extraction part 1b, 1d is comprised from the gas inflow port 1b provided in both surfaces of the 1st electrode 1, and the gas flow path part 1d arrange | positioned in the 1st electrode 1 inside. The gas inlet 1b is formed due to the through hole, and a plurality of the gas inlets 1b are formed outside the outer periphery of the spacer 6 surrounding the gas passage pipe 21. The gas flow path portion 1d is formed due to the predetermined pattern, and connects the gas inlet port 1b and the gas passage pipe 21. Here, the flow path portion 1d is not linear but is arranged in a spiral shape. Therefore, the active gas generated in the discharge space 100 flows into each gas inlet 1b, becomes a spiral flow by each gas flow path portion 1d, and merges in the gas passage tube 21.

  Here, in the first electrode 1, the coolant channel 1 r and the gas channel portions 1 d do not merge but are formed separately and independently.

  In addition, the code | symbol 13a shown in FIG. 3 is a hole which the coolant distribution cell fastening bolt 12 penetrates.

  Next, the effect of the active gas generation apparatus 700 having the configuration described above will be described.

The lifetime of the active gas is often very short. For example, N ₂ (A), N ₂ (B) or N can be considered as the active species of nitrogen, and its half-life is about several milliseconds under atmospheric pressure. Therefore, in the case of a configuration in which the generated active gas is propagated to the material to be processed that is separated by a long distance, the active gas disappears in the middle, and the active gas cannot be efficiently taken out from the material to be processed.

  In the present embodiment, a raw material gas is taken from the outer periphery of the electrode cells 1 and 2, an AC voltage is applied to the electrode cells 1 and 2, and an active gas is generated in the discharge space 100 by dielectric barrier discharge. And in the center area | region in planar view of the electrode cells 1 and 2, gas extraction part 1b, 1d is formed, and it has the structure which extracts active gas from the said gas extraction part 1b, 1d.

  In this way, the active gas is not propagated across to the ends of the electrode cells 1 and 2, but is only propagated to the central region of the electrode cells 1 and 2. Therefore, the active gas generated in the discharge space 100 can be extracted from the active gas extraction portions 1b and 1d at a very short distance. Therefore, excessive attenuation of the generated active gas can be suppressed as much as possible while fully utilizing the discharge regions of the electrode cells 1 and 2, and the active gas can be efficiently extracted from the material to be processed 18. That is, the active gas can reach the material 18 to be processed while maintaining a high concentration of the active gas.

  The present invention also provides a remote plasma type film forming apparatus. That is, the active gas generation apparatus 700 that generates active gas from the raw material gas and the processing apparatus that performs the film forming process on the material to be processed 18 using the generated active gas are separate and independent apparatuses.

  As described above, since the plasma generation source and the processing region are completely separated, ions generated by ionization in the plasma source can be prevented from colliding with the workpiece 18 disposed in the processing region. Thereby, the damage to the to-be-processed material 18 by the plasma can be eliminated completely.

  In the present embodiment, the active gas is generated in the electrode cells 1 and 2 by using high-frequency plasma by dielectric barrier discharge instead of microwaves. Therefore, atmospheric pressure discharge is possible, and there is no need to evacuate the casings 16 and 161 in the active gas generator 700. Thereby, the active gas generating apparatus 700 having a simple configuration can be provided.

  Moreover, in this Embodiment, the planar view shape of the electrode cells 1 and 2 is circular. That is, the planar view shape of the first electrode 1 and the second electrode 2 in the discharge region where the first electrode 1 and the second electrode 2 face each other is a circle.

  Therefore, the distance from the outer peripheral part to the center part of the electrode cells 1 and 2 can be made the shortest distance at the same distance in the entire range.

  Further, in the present embodiment, two electrode cells 1 and 2 are configured by sandwiching one first electrode 1 between two electrodes 2.

  Therefore, more electrode cells 1 and 2 can be configured with a smaller configuration. Therefore, the active gas generation device 100 can be reduced in size and manufacturing cost.

  In the present embodiment, the plurality of electrode cells 1 and 2 are arranged in a stacked state, and communicate with the gas extraction portions 1b and 1d provided in the electrode cells 1 and 2, respectively. Is provided with a gas passage pipe 21 extending in the stacking direction.

  Therefore, the active gas can be generated from the plurality of electrode cells 1 and 2, and the active gas can be merged in the active gas passage pipe 21. Therefore, since the large amount of active gas can be taken out from the active gas passage pipe 21, the large amount of active gas can be exposed to the material 18 to be processed. Since the electrode cells 1 and 2 are stacked in the vertical direction, the generation amount of the active gas can be greatly increased without increasing the area occupied by the active gas generation apparatus 700.

  In the present embodiment, a coolant channel 1r through which coolant can flow is formed inside the first electrode 1. Therefore, the heat generated in the electrode cells 1 and 2 due to the dielectric barrier discharge can be radiated.

  In the present embodiment, the electrode cells 1 and 2 each have a plurality of gas extraction portions 1 b and 1 d, and each gas extraction portion 1 b and 1 d is a gas inlet 1 b provided in the first electrode 1. And a gas flow path portion 1 d disposed in the first electrode 1. Here, the gas flow path portion 1d is spirally connected between the gas inlet 1b and the gas passage tube 21.

  Therefore, the active gas generated in the electrode cells 1 and 2 can be merged in the gas passage pipe 21 in a spiral flow. As a result, the collision cross-sectional area between the gas particles can be reduced at the time of gas merging, so that the attenuation due to the collision of the active gas can be suppressed. Therefore, it is possible to maintain a high concentration and a large flow rate of the active gas exposed to the material 18 to be processed.

  Moreover, as a constituent material of the first electrode 1, a stainless material such as SUS316 is basically used from the viewpoint of easy molding. On the other hand, aluminum or an aluminum alloy such as A6061 and A5052 can also be adopted as a constituent material of the first electrode 1. The surface of the aluminum member is anodized.

  By making the constituent material of the first electrode 1 an aluminum member, the generation efficiency of the active gas can be increased and the attenuation rate of the active gas can be suppressed. Accordingly, the active gas having a high concentration and a large flow rate can be exposed to the material 18 to be processed.

  In the present embodiment, the dielectric 2a included in the second electrode 2 is aluminum oxide or aluminum nitride. In particular, the dielectric 2a is preferably aluminum nitride.

  When a stainless material is used for the first electrode 1, the surface thereof is sprayed with aluminum oxide or aluminum nitride. The combination of the first electrode 1 and the dielectric 2a made of aluminum oxide or aluminum nitride can further suppress the attenuation of the active gas. In addition, by using aluminum nitride as the dielectric 2a, in the case of nitriding with nitrogen active species, it is possible to suppress the attenuation of the nitrogen active species (active gas) and prevent oxidation of the material 18 to be processed. .

Nitrogen gas or nitrogen compound gas (NH ₃ , NO _2, etc.) may be employed as the source gas supplied into the active gas generator 700. In this case, the generated active gas is an N radical gas or N molecular gas containing nitrogen that is effective for the nitriding surface treatment of the material 18 to be processed. Therefore, the nitriding surface treatment can be efficiently performed on the workpiece 18.

In addition, oxygen gas or oxygen compound gas (such as ozone, water vapor, or NO ₂ ) may be employed as the raw material gas supplied into the active gas generator 700. In this case, an oxygen radical or ozone molecular gas containing oxygen that is effective for the oxidized surface treatment of the material to be treated 18 can be obtained as the active gas at a high concentration. Therefore, it is possible to form a very high quality oxide film for the material 18 to be processed. In addition, the oxide film can be formed in a low temperature state in a short time.

  Moreover, in this Embodiment, the space gap (discharge space) 100 in the electrode cells 1 and 2 is 0.05 mm or more and 2.0 mm or less. By limiting the gap width of the discharge space 100 to the above, the generated active gas can be taken out efficiently, and the amount of active gas that can be taken out can be increased.

  Further, in the laminated structure of the discharge units 1 to 5, the coolant path from the coolant inlet / outlet 19 to the first electrode 1 and the high-pressure cooling plate 5 is connected and cooled using the connection block 9 via the O-ring 11. It is formed by fixing to the apparatus base 16 with the material distribution cell fastening bolt 13. Further, the gas passage pipe 21 is formed by connection using the ring 7 via the O-ring 10 and fixing to the apparatus base 16 by the electrode cell fastening bolt 12.

  Therefore, the airtightness of the coolant passage and the gas passage pipe 21 from the coolant inlet / outlet 19 to the first electrode 1 and the high-pressure cooling plate 5 can be secured, the assembly work of the device is facilitated, and the compact active gas generator 700 is provided. Is realized.

<Embodiment 2>
The electrode cells 1 and 2 described in the first embodiment are desirably configured as follows.

  That is, it is desirable that the surface of the second electrode 2 facing the first electrode 1 has an uneven shape. Specifically, it is desirable that the surface of the dielectric 2a facing the first electrode 1 has an uneven shape. It is desirable that the surface of the first electrode 1 facing the second electrode 2 is coated with a particulate electrode material.

  The concave / convex shape on the surface of the second electrode 2 (the surface on which the metal thin film 2d is not formed in the dielectric 2a) is formed, for example, by causing ions to collide with the surface on which the concave / convex shape is formed. Further, for example, the surface of the first electrode 1 is coated with a particulate electrode material by spin coating in which an electrode material solution is dropped onto the surface of the rotating first electrode 1 to perform coating.

  By adopting the configuration described in the present embodiment for the electrode cells 1 and 2 described in the first embodiment, the electrode surface area can be significantly increased. Therefore, it is possible to increase the generation efficiency of the active gas in the vicinity of the electrode, and as a result, it is possible to generate a high concentration and a large flow of active gas.

  As the particulate electrode material used for coating the first electrode 1, it is preferable to select a particulate electrode material having the highest generation efficiency of the activated gas.

<Embodiment 3>
Instead of the active gas generation apparatus 700 according to Embodiment 1, it is desirable to use the active gas generation apparatus 701 according to this embodiment. FIG. 6 is a cross-sectional view showing the configuration of the active gas generation device 701 according to the present embodiment.

  As can be seen from a comparison between FIG. 1 and FIG. 6, the active gas generation device 701 according to the present embodiment has a configuration in which the rare gas supply unit 30 is added to the active gas generation device 700 according to the first embodiment. is there. The configuration of the apparatus 700 is the same as the configuration of the apparatus 701 except that the rare gas supply unit 30 is provided.

  The rare gas supply unit 30 provided in the active gas generation device 701 is formed so as to penetrate the chamber 161. The rare gas supply unit 30 is configured to take in a rare gas from the outside of the apparatus 701 and supply the rare gas to the gas passage pipe 21 via the rare gas passage 31. That is, the opening at one end of the rare gas supply unit 30 exists outside the chamber 161, and the opening at the other end of the rare gas supply unit 30 is connected to the gas passage pipe 21.

  A rare gas such as argon or helium whose flow rate is adjusted by a mass flow controller or the like (not shown) is introduced from the outside of the apparatus 701 through an opening at one end of the rare gas supply unit 30, and the other of the rare gas supply unit 30. The gas is supplied from the end opening into the gas passage pipe 21. Then, the supplied rare gas and the active gas generated in the electrode cells 1 and 2 are mixed in the gas passage pipe 21 to dilute the active gas. The mixed gas is discharged to the outside from the gas blowing plate 14 disposed on the apparatus base 16 in a state containing the rare gas as it is.

  As described above, in the present embodiment, the rare gas supply unit 30 that supplies the rare gas to the gas passage pipe 21 is provided.

  Therefore, the supply of the rare gas in the gas passage pipe 21 can suppress the attenuation of the active species due to the collision between the active gases in the gas passage pipe 21. Thereby, it is possible to maintain a high concentration and a large flow rate of the active gas taken out from the active gas generation device 701 and exposed to the material 18 to be processed.

<Embodiment 4>
It is more desirable to use the active gas generation device 702 according to the present embodiment instead of the active gas generation device 701 according to the third embodiment. FIG. 7 is a cross-sectional view showing the configuration of the active gas generation apparatus 702 according to the present embodiment.

  As can be seen from a comparison between FIG. 6 and FIG. 7, the active gas generation device 702 according to the present embodiment has a configuration in which a pre-discharger 800 is added to the active gas generation device 701 according to the third embodiment. . The configuration of the device 701 is the same as the configuration of the device 702 except that the preliminary discharger 800 is provided.

  The preliminary discharger 800 is connected to an opening at one end of the rare gas supply unit 30. Therefore, the rare gas is supplied into the gas passage tube 21 after passing through the preliminary discharger. The preliminary discharger 800 includes a preliminary discharge generation power supply 32, a preliminary discharge high voltage electrode 33, a preliminary discharge dielectric 34, and a preliminary discharge ground electrode 35.

  The preliminary discharge ground electrode 35 and the preliminary discharge dielectric 34 are installed via a predetermined space (preliminary discharge space 36). In addition, a predischarge high voltage electrode 33 is provided in the predischarge dielectric 34 in contact with the predischarge dielectric 34. Further, a preliminary discharge ground electrode 35 is connected to one terminal of the preliminary discharge generation power supply 32, and a preliminary discharge high voltage electrode 33 is connected to the other terminal of the preliminary discharge generation power supply 32.

  An AC voltage is applied to the preliminary discharge high voltage electrode 33 and the preliminary discharge ground electrode 35 by the preliminary discharge generation power source 32. As a result, a dielectric barrier discharge is generated in the preliminary discharge space 36 between the preliminary discharge ground electrode 35 and the preliminary discharge dielectric 34. In the dielectric barrier discharge generation field, a rare gas is introduced from a rare gas supply port 37 formed on the side surface of the preliminary discharge ground electrode 35. Then, at least a part of the introduced rare gas is excited to the active state in the preliminary discharge space 36. Then, the rare gas containing the activated gas is supplied into the gas passage tube 21 through the rare gas supply unit 30. In the gas passage tube 21, as in the third embodiment, the rare gas containing the activated gas is mixed with the active gas.

  As described above, in the present embodiment, the preliminary discharger 800 is further provided, and the rare gas is supplied from the preliminary discharger 800 to the rare gas supply unit 30, and the rare gas supply unit 30 supplies the gas passage tube. 21 is supplied.

  Therefore, the rare gas can be excited to the active state by the preliminary discharger 800 before being supplied to the gas passage tube 21. Therefore, since the rare gas excited to the active state is supplied into the gas passage pipe 21, the effect of suppressing the disappearance of the active gas can be enhanced as compared with the case of the third embodiment.

  In the present embodiment, the case where the dielectric barrier discharge field is formed in the preliminary discharger 800 has been described. However, the discharge is not limited to the dielectric barrier discharge, and a discharge capable of exciting other rare gas may be employed. For example, the preliminary discharger 800 may have a configuration capable of generating microwave discharge or RF (Radio Frequency) wave discharge.

<Embodiment 5>
Instead of the active gas generation apparatus 700 according to the first embodiment, it is desirable to use the active gas generation apparatus 703 according to the present embodiment. FIG. 8 is a cross-sectional view showing the configuration of the active gas generator 703 according to the present embodiment.

  As can be seen from a comparison between FIG. 1 and FIG. 8, the active gas generation device 703 according to the present embodiment has a configuration in which the orifice 22 is added to the active gas generation device 700 according to the first embodiment. The configuration of the apparatus 700 is the same as that of the apparatus 703 except that the orifice 22 is provided.

  The orifice 22 is disposed at the end of the gas passage pipe 21 on the surface of the apparatus base 16 that faces the workpiece 18. In the active gas generator 703, the gas blowing plate 14 is omitted, but the orifice 22 may be disposed at the end of the gas passage pipe 21 via the gas blowing plate 14.

  The supply gas flow rate of the source gas supplied to the active gas generator 700 is controlled by a mass flow controller (not shown) before the source supply port 20. On the other hand, the material 18 to be processed is covered by a processing device (for example, a CVD device) 23 not shown in FIGS. 1, 6 and 7, and the space where the material 18 is placed is The pressure is reduced to a vacuum state by the exhaust pump 24.

  Here, as described in the first embodiment, the active gas generation apparatus 703 and the processing apparatus 23 constitute a remote plasma type film forming processing apparatus. Further, the processing device 23 can be attached to the active gas generation device 703 below the active gas generation device 703. The processing apparatus 23 forms a predetermined film on the object 18 disposed inside using the gas sent from the active gas generation apparatus 703.

  The pressure in the processing device 23 is reduced to a predetermined pressure by the exhaust pump 24. Depending on the predetermined pressure in the processing device 23 and the capability of the exhaust pump 24, the diameter of the orifice 22 and the source gas supply port The raw material gas flow rate supplied from 20 is set. The raw material gas flow rate is also an amount that the internal pressure of the active gas generator 703 is maintained at 50 kPa to atmospheric pressure, and by maintaining the vicinity of atmospheric pressure, dielectric barrier discharge is generated in the electrode cells 1 and 2. Is possible.

  Setting the processing device 23 under reduced pressure is performed when the processing of the material 18 to be processed under reduced pressure is required. By reducing the pressure inside the processing device 23, the active gas in the processing device 23 is reduced. The collision frequency can be reduced. Thereby, the lifetime of the active gas supplied into the processing apparatus 23 can be extended.

  As described above, in the present embodiment, the orifice 22 is connected to the gas output portion of the gas passage pipe 21 as in the configuration shown in FIG.

  Therefore, the pressure near the atmospheric pressure in the active gas generation apparatus 703 and the predetermined pressure in the processing apparatus 23 in which the processing object 18 is installed and depressurized can be separated in pressure. As a result, dielectric barrier discharge can be performed in the active gas generation device 703, and in the processing device 23, it is possible to perform film formation processing in a vacuum state on the material 18 to be processed and to prolong the life of the active gas. Become.

  In the present embodiment, the configuration in which the orifice 22 is provided in the active gas generation apparatus described in the first embodiment has been described. However, it is also possible to arrange the orifice 22 with the same configuration in the active gas generator described in the third and fourth embodiments.

<Embodiment 6>
Instead of the active gas generation apparatus 700 according to Embodiment 1, it is desirable to use the active gas generation apparatus 704 according to this embodiment. FIG. 9 is a cross-sectional view showing the configuration of the active gas generation apparatus 704 according to the present embodiment.

  As can be seen from a comparison between FIG. 1 and FIG. 9, the active gas generation device 704 according to the present embodiment includes a radiation plate 40 instead of the gas blowing plate 14 of the active gas generation device 700 according to the first embodiment. It is arranged. The configuration of the apparatus 700 is the same as that of the apparatus 704 except that the gas blowing plate 14 is replaced with the radiation plate 40. 9 shows a processing apparatus 23 such as a CVD apparatus, which is not shown in FIG. That is, FIG. 9 shows a remote plasma film forming processing apparatus including the active gas generation apparatus 704 and the processing apparatus 23.

  The radiation plate 40 is installed on the device base 16 between the discharge unit pairs 5 to 5 having the stacked structure described in the first embodiment and the device base 16. The planar view shape of the radiation plate 40 is circular. That is, the radiation plate 40 is a disk type. A cavity is formed inside the radiation plate 40.

  Moreover, one opening is provided in the 1st main surface (surface on the side which faces the discharge unit pairs 5-5 of a laminated structure) of the radiation plate 40, The said opening is the gas inflow part 40b. Become. As shown in FIG. 9, a ring 7 exists between the lowermost high pressure cooling plate 5 and the radiation plate 40. Here, the O-ring 10 is also provided between the main surface of the radiation plate 40 and the ring 7, and the airtightness of the connection portion between the ring 7 and the radiation plate 40 is also ensured. The gas inflow portion 40b is formed at the center of the circular first main surface.

  As can be seen from the connection between the ring 7 and the radiation plate 40, the end of the gas passage tube 21 described in the first embodiment is connected to the first main surface of the radiation plate 40. More specifically, the end portion of the gas passage pipe 21 is connected to a gas inflow portion 40 b formed on the first main surface of the radiation plate 40. Therefore, the active gas that has passed through the gas passage pipe 21 flows into the radiation plate 40 through the gas inflow portion 40b.

  A cavity, more specifically, a gas passage portion 42 is formed inside the radiation plate 40. Therefore, the active gas flowing in from the gas inflow portion 40b diffuses toward the outer peripheral portion of the plate concentrically in the gas passage portion 42. In addition, a plurality of openings are provided on the second main surface of the radiation plate 40 (the surface facing the material 18 to be processed), and the plurality of openings serve as a gas diffusing portion 40a. Here, the gas diffusion portion 40a is provided evenly on the second main surface. That is, the number of gas diffusing portions 40a per predetermined area on the second main surface is uniform (the same number) over the entire second main surface. The opening area of the gas diffusing portion 40a is very fine and is at least smaller than the opening of the gas inflow portion 40b.

  Further, an opening 16t is formed in a predetermined region on the bottom surface of the device base 16, and all the gas diffusing portions 40a provided in the radiation plate 40 are exposed from the opening 16t. Therefore, the active gas that has propagated through the gas passage portion 42 is supplied into the processing apparatus 23 via each gas diffusion portion 40a and the opening portion 16t.

  In the processing apparatus 23, an installation table 25 for placing the material 18 to be processed is provided. Here, the installation table 25 is provided with a heater 27 for heating the workpiece 18. Further, the installation table 25 can move on the installation table drawer rail 26 provided in the processing device 23. As described in Embodiment 1 and the like, the processing apparatus 23 can be attached to the active gas generation apparatus 704 below the active gas generation apparatus 704 and uses the active gas delivered from the apparatus 704. Then, a predetermined film is formed on the object 18 to be processed disposed inside the processing apparatus 23.

  As described above, since the gas diffusing section 40a is evenly provided on the second main surface, the radiation is uniformly distributed over the entire surface of the workpiece 18 placed on the installation table 25. The active gas supplied from the plate 40 is irradiated.

  Next, the configuration of the radiation plate 40 will be specifically described with reference to an exploded perspective view shown in FIG.

  As shown in FIG. 10, the radiation plate 40 is configured by combining two disk-shaped plate plates 401 and 402. One gas inflow portion 40b is formed in the center portion of one plate plate 402 by etching or machining. Further, the other plate plate 401 is provided with a plurality of gas diffusion portions 40a equally by etching or machining.

  In addition, at least one of the plate plates 401 and 402 is formed with a space rib 40c having a predetermined pattern constituting the gas passage portion 42 by half-etching or machining. In the configuration diagram shown in FIG. 10, each space rib 40c has a cylindrical shape. Further, FIG. 10 illustrates a state in which the space rib 40 c is formed on the other plate plate 401. In the state in which the space rib 40c is formed, the two plate plates 401 and 402 are combined (bonded). Thereby, a gap space of the space rib 40 c is formed in the radiation plate 40, and the gap space becomes the gas passage portion 42.

  In the radiation plate 40 having the configuration shown in FIG. 10, the active gas entering the inside from the active gas inflow portion 40 b diffuses in the gas passage portion 42 in the radiation plate 40 while colliding with the space rib 40 c. And since the opening part of the gas diffusion part 40a is very small, it is buffered inside the radiation plate 40 (the gas channel part 42 whole). The active gas filled in the entire gas passage portion 42 by diffusion inside the radiation plate 40 is released toward the material 18 to be processed disposed in the processing apparatus 23 from each gas diffusion portion 40a. The active gas is released from each gas diffusion part 40a at an equal speed. Further, the flow velocity of the active gas released from each gas diffusion portion 40a is at least larger than the flow velocity of the active gas diffusing inside the gas passage portion 42.

  Here, in order for the active gas to diffuse evenly throughout the radiation plate 40 and to release the active gas from each gas diffusing portion 40a at a high flow rate, the thickness of the radiating plate 40 should be thin and each gas diffusing. The opening area of the portion 40a should be finer. Specifically, the thickness of the radiation plate 40 is desirably 3 mm or less (of course, not including zero), and the opening diameter of each gas diffusion portion 40a is desirably 1 μm or more and 1000 μm or less. In order to release the active gas from each gas diffusing portion 40a at an equal flow rate, the opening diameter of each gas diffusing portion 40a is desirably 1 μm or more and 300 μm or less.

  The plate plate 401 and the plate plate 402 can be connected (joined) by brazing or diffusion bonding. However, when joining by brazing is adopted, active gas loss or brazing deterioration is likely to occur due to the reaction between the brazing material and the active gas. Therefore, when joining both plate plates 401 and 402, it is desirable to employ diffusion bonding.

  As described above, in the present embodiment, the active gas generation device 704 includes the radiation plate 40 connected to the end of the gas passage pipe 21. The radiation plate 40 includes a gas inflow portion 40 b connected to the end of the gas passage pipe 21, a gas diffusion portion 42 for diffusing the active gas into the radiation plate 40, and the workpiece 18. On the other hand, a plurality of gas diffusing parts 40a for releasing the active gas are provided.

  Therefore, the active gas can be taken out not only from directly below the gas passage pipe 21 but also from a wide range by being radially distributed in the radiation plate 40. Thereby, surface treatment can be performed in a short processing time even for the material 18 having a large surface area with a simple configuration.

  In the present embodiment, the plurality of gas diffusing portions 40 a are evenly arranged in the second main surface of the radiation plate 40. Accordingly, it is possible to prevent the release of the unevenly distributed active gas from the second main surface.

  Further, in the present embodiment, the radiation plate 40 is configured by combining two plate plates 401 and 402. At least one of the plate plates 401 and 402 is formed with a space rib 40c having a predetermined pattern for constituting the gas passage portion.

  Therefore, with a simple configuration, it is possible to form the radiation plate 40 serving as the active gas buffer tank and the gas passage portion 42 through which the active gas can diffuse (disperse) in the radiation plate 40. Further, the radiation plates 401 and 402 can be joined by brazing or diffusion joining, and the space rib 40c can also be formed by a half etching process or machining. Therefore, the radiation plate 40 shown in FIG. 10 can be manufactured by a simple production method and low cost.

  As described above, when the radiation plate 40 is formed by combining the two plate plates 401 and 402, it is desirable to employ diffusion bonding.

  As a result, it is possible to prevent the loss of active gas in the radiation plate 40 and the decrease in the bonding force between the plate plates 401 and 402, which occurred when the two plate plates 401 and 402 are joined by brazing. . In the case of diffusion bonding, the plate plates 401 and 402 are not distorted during bonding. Therefore, the active gas can flow in the radiation plate 40 with low resistance.

  The thickness of the radiation plate 40 is preferably 3 mm or less. Moreover, it is desirable for the opening diameter of each gas diffusion part 40a to be 1-1000 micrometers.

  By adopting the configuration of the radiation plate 40 and the configuration of the gas diffusing portion 40a, the active gas is evenly diffused throughout the radiating plate 40, and the active gas can be released from each gas diffusing portion 40a at a high flow rate. it can. In addition, since the radiation plate 40 has a thin plate shape, the radiation plate 40 can be easily disposed in the active gas generation device 704 while preventing the entire apparatus from becoming large.

  The opening diameter of the gas diffusion part 40a is more preferably 1 to 300 μm. This is because the active gas can be discharged from each gas diffusion portion 40a at an equal flow rate. Thus, uniform film formation can be realized even on the surface of the material 18 having a large area by releasing the active gas with a uniform flow rate from each gas diffusion portion 40a.

  In addition, below each active gas production | generation apparatus 700-704, as shown in FIG.8, 9, etc., processing apparatuses 23, such as a CVD apparatus which performs the film-forming process using the active gas of the to-be-processed material 18, can be mounted | worn. That is, the active gas generation apparatuses 700 to 704 and the processing apparatus 23 constitute a remote plasma type film forming processing apparatus.

  In this way, by attaching the processing apparatus 23 to the active gas generation apparatuses 700 to 704, the processing apparatus 23 can be made compact and an inexpensive remote plasma type film forming processing apparatus can be realized.

  In addition, the surface treatment method which arrange | positions the to-be-processed material 18 in order in the processing apparatus 23 with which the several active gas production | generation apparatuses 700-704 were installed side by side, and was equipped with each active gas production | generation apparatus 700-704 is also employable. As a result, a plurality of films can be stacked on the surface of the material 18 to be processed.

  Note that the invention described in each of the above embodiments is used in plasma film formation processing (for example, nitridation processing) for a semiconductor device. For example, the present invention is used when forming a gate insulating film used for a CMOS transistor or the like.

DESCRIPTION OF SYMBOLS 1 1st electrode 1a Electrode plate 1b Gas inflow port 1d Gas flow path part 1r Coolant flow path 1m Part 2 (being the inlet / outlet of the coolant) 2 Second electrode 2a Dielectric 2d Metal thin film 3 High voltage electrode 4 Insulating plate High pressure cooling plate 6 Spacer 7 Ring 8 Clamping plate 9 Connection block 10, 11 O-ring 12 Electrode cell clamping bolt 13 Coolant distribution cell clamping bolt 14 Gas blowing plate 15 Electric supply terminal 16 Device base 17 AC power source 18 Processed material 19 Coolant inlet / outlet section 20 Raw material gas supply section 21 Gas passage pipe 22 Orifice 23 Processing device 24 Exhaust pump 25 Installation table 26 Installation table drawer rail 27 Heater 30 Noble gas supply section 31 Noble gas passage 32 Power supply 33 for preliminary discharge generation Predischarge high voltage electrode 34 Predischarge dielectric 35 Predischarge installation electrode 36 Predischarge space 3 7 Noble gas supply port 40 Radiation plate 40a Gas diffusion part 40b Gas inflow part 40c Space rib 42 Gas passage part 100 Space gap (discharge space)
161 Chamber 401, 402 Plate plate 700, 701, 702, 703, 704 Active gas generator 800 Predischarger

Claims (20)

At least one electrode cell;
A power supply for applying an alternating voltage to the electrode cell;
A housing surrounding the electrode cell;
A source gas supply unit that is formed in the casing and supplies source gas into the casing from the outside, and
The electrode cell is
A first electrode;
A second electrode having a dielectric,
The first electrode is
Facing the second electrode across the dielectric and a spatial gap;
In the central region of the electrode cell in plan view,
A gas outlet is formed,
In the range where the first electrode and the second electrode face each other, the planar view shapes of the first electrode and the second electrode are as follows:
Circular,
The electrode cell is
Two second electrodes,
The first main surface of the first electrode is
The one second electrode is opposed to the one second electrode across the dielectric and the space gap,
The second main surface of the first electrode is
The other second electrode faces the other second electrode across the dielectric and the space gap,
The electrode cell is
Multiple
Each said electrode cell
They are arranged in a laminated state,
A gas passage pipe that communicates with each of the gas extraction portions provided in each of the electrode cells, and extends in the stacking direction at the center of the electrode cells;
The gas extraction part provided in each of the electrode cells,
Multiple
Each of the gas outlets is
A gas inlet provided in the first main surface and the second main surface of the first electrode;
A gas flow path section disposed in the first electrode and spirally connected between the gas inlet and the gas passage pipe ,
By applying the AC voltage to the electrode cell by the power supply unit, a dielectric barrier discharge is generated in the space gap, and the source gas is excited by the plasma by the dielectric barrier discharge to generate an active gas. To be
An active gas generator characterized by that. In the first electrode,
  A coolant channel through which coolant can flow is formed,
The active gas generation device according to claim 1, wherein: A rare gas supply unit for supplying a rare gas to the gas passage pipe;
The active gas generation device according to claim 1, wherein: Further comprising a pre-discharger;
  The noble gas is
  Supplied from the preliminary discharger to the rare gas supply unit,
The active gas generator according to claim 3. An orifice disposed at an end of the gas passage tube,
The active gas generation device according to claim 1, wherein: The first electrode is
  Made of aluminum or an alloy containing aluminum,
The active gas generation device according to claim 1, wherein: The dielectric of the second electrode is:
  Aluminum oxide or aluminum nitride,
The active gas generation device according to claim 1, wherein: The surface of the second electrode on the side facing the first electrode is:
  Having an uneven shape,
The active gas generation device according to claim 1, wherein: The surface of the first electrode on the side facing the second electrode is
  Coated with particulate electrode material,
The active gas generation device according to claim 1, wherein: From the source gas supply unit into the housing,
  Nitrogen gas or nitrogen compound gas is supplied,
The active gas generation device according to claim 1, wherein: From the source gas supply unit into the housing,
  Oxygen gas or oxygen compound gas is supplied,
The active gas generation device according to claim 1, wherein: A radiation plate connected to an end of the gas passage pipe,
  The radiation plate is
  A gas inflow portion connected to an end portion of the gas passage pipe formed on the first main surface;
  An internally disposed gas passage,
  A plurality of gas diffusion portions provided on the second main surface,
The active gas generation device according to claim 1, wherein: The gas diffusion part is
  Evenly disposed in the second main surface,
The active gas generator according to claim 12, wherein The radiation plate is
  It is composed by combining two plate plates,
  The predetermined pattern which comprises the said gas channel part is given to at least one plate board,
The active gas generator according to claim 12, wherein The radiation plate is
  It is composed by combining two plate plates,
  The plate plates are
  Connected by diffusion bonding,
The active gas generator according to claim 12, wherein The opening diameter of the gas diffusion part is
  1 μm or more and 1000 μm or less,
The active gas generator according to claim 12, wherein The opening diameter of the gas diffusion part is
  1 μm or more and 300 μm or less,
The active gas generator according to claim 16, wherein The thickness of the radiation plate is
  3 mm or less,
The active gas generator according to claim 12, wherein The spatial gap is
  0.05 mm or more and 2.0 mm or less,
The active gas generation device according to claim 1, wherein: The active gas generating device according to any one of claims 1 to 19, wherein the active gas is generated by exciting the source gas with plasma;
  A processing apparatus which can be attached to the active gas generation apparatus below the active gas generation apparatus and forms a predetermined film on an object to be processed disposed inside using the gas delivered from the gas extraction unit With
A remote plasma type film forming apparatus characterized by that.

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