JP5431799B2 - Semiconductor laser and semiconductor optical modulator differential type semiconductor device - Google Patents

Semiconductor laser and semiconductor optical modulator differential type semiconductor device Download PDF

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JP5431799B2
JP5431799B2 JP2009139267A JP2009139267A JP5431799B2 JP 5431799 B2 JP5431799 B2 JP 5431799B2 JP 2009139267 A JP2009139267 A JP 2009139267A JP 2009139267 A JP2009139267 A JP 2009139267A JP 5431799 B2 JP5431799 B2 JP 5431799B2
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semiconductor laser
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敏夫 伊藤
慈 金澤
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Nippon Telegraph and Telephone Corp
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Description

本発明は、半導体レーザ及び半導体光変調器差動型半導体装置に関する。   The present invention relates to a semiconductor laser and a semiconductor optical modulator differential type semiconductor device.

高速・広帯域で、かつ小型の光伝送システムを実現するため、半導体レーザと電界吸収型半導体光変調器（以下、ＥＡ変調器という）を集積したＥＡ変調器集積半導体レーザの開発が進んでいる。このＥＡ変調器集積半導体レーザのビットレートとしては、例えば１０Ｇｂ／ｓ、又は２５Ｇｂ／ｓ等が想定されている。   Development of an EA modulator integrated semiconductor laser in which a semiconductor laser and an electroabsorption type semiconductor optical modulator (hereinafter referred to as an EA modulator) are integrated is progressing in order to realize a high-speed, wideband and small-sized optical transmission system. As a bit rate of the EA modulator integrated semiconductor laser, for example, 10 Gb / s, 25 Gb / s, or the like is assumed.

図２は、第１の従来例に係るＥＡ変調器集積半導体レーザの構成を示した断面図である。なお、図２（ａ）は半導体レーザ、図２（ｂ）はＥＡ変調器の構成を示した断面図である。
図２に示すように、第１の従来例に係るＥＡ変調器集積半導体レーザは、半導体レーザ１００及びＥＡ変調器２００を備えている（下記非特許参考文献１参照）。 FIG. 2 is a cross-sectional view showing the configuration of the EA modulator integrated semiconductor laser according to the first conventional example. 2A is a sectional view showing the configuration of the semiconductor laser, and FIG. 2B is a sectional view showing the configuration of the EA modulator.
As shown in FIG. 2, the EA modulator integrated semiconductor laser according to the first conventional example includes a semiconductor laser 100 and an EA modulator 200 (see Non-Patent Reference 1 below).

図２（ａ）に示すように、半導体レーザ１００は、ｎ−ＩｎＰ基板１１０、半絶縁ＩｎＰ層１１１、ｎ−ＩｎＰ１１２、ｎ−コンタクト層１１３、ｐ−ＩｎＰ１１４、半絶縁ＩｎＰ１１５、活性層１１６、ｐ−ＩｎＰ１１７、回折格子を形成したガイド層１１８、ｐ−ＩｎＰ１１９、ｐ−コンタクト層１２０、絶縁層１２１、ｐ側電極１２２及びｎ側電極１２３を備えている。   As shown in FIG. 2A, the semiconductor laser 100 includes an n-InP substrate 110, a semi-insulating InP layer 111, an n-InP 112, an n-contact layer 113, a p-InP 114, a semi-insulating InP 115, an active layer 116, p. -InP117, a guide layer 118 formed with a diffraction grating, p-InP119, p-contact layer 120, insulating layer 121, p-side electrode 122, and n-side electrode 123.

また、図２（ｂ）に示すように、ＥＡ変調器２００は、ｎ−ＩｎＰ基板２１０、ｎ−ＩｎＰ２１１、半絶縁ＩｎＰ２１２、吸収層２１３、ｐ−ＩｎＰ２１４、ｐ−コンタクト層２１５、ｐ側電極２１６及びｎ側電極２１７を備えている。
さらに、ＥＡ変調器２００は、差動ドライバー２２０、正論理の信号が流れる配線２２１、負論理の信号が流れる配線２２２、終端抵抗２２３を備えている。 As shown in FIG. 2B, the EA modulator 200 includes an n-InP substrate 210, an n-InP 211, a semi-insulating InP 212, an absorption layer 213, a p-InP 214, a p-contact layer 215, and a p-side electrode 216. And an n-side electrode 217.
The EA modulator 200 further includes a differential driver 220, a wiring 221 through which a positive logic signal flows, a wiring 222 through which a negative logic signal flows, and a termination resistor 223.

図２に示した第１の従来例に係るＥＡ変調器集積半導体レーザにおいては、一般に、半導体レーザ１００のｎ−ＩｎＰ基板１１０とＥＡ変調器２００のｎ−ＩｎＰ基板２１０は共通である。また、活性層１１６と吸収層２１３はバットジョイントにより接合されている。さらに、半導体レーザ１００のｐ側電極１２２と、半導体レーザ１００のｎ側電極１２３と、ＥＡ変調器２００のｐ側電極２１６は分離溝によってそれぞれ分離されている。さらに、半絶縁ＩｎＰ層１１１によって、ＥＡ変調器２００のｎ側電極２１７も半導体レーザ１００のｐ側電極１２２及びｎ側電極１２３から分離されている。   In the EA modulator integrated semiconductor laser according to the first conventional example shown in FIG. 2, the n-InP substrate 110 of the semiconductor laser 100 and the n-InP substrate 210 of the EA modulator 200 are generally common. Further, the active layer 116 and the absorption layer 213 are joined by a butt joint. Further, the p-side electrode 122 of the semiconductor laser 100, the n-side electrode 123 of the semiconductor laser 100, and the p-side electrode 216 of the EA modulator 200 are separated by a separation groove. Further, the n-side electrode 217 of the EA modulator 200 is also separated from the p-side electrode 122 and the n-side electrode 123 of the semiconductor laser 100 by the semi-insulating InP layer 111.

以上説明したように、図２に示した第１の従来例に係るＥＡ変調器集積半導体レーザの構成によれば、半導体レーザ１００とＥＡ変調器２００とが電気的に完全に分離されるので、半導体レーザ１００とＥＡ変調器２００に別々の電気信号を印加することができる。   As described above, according to the configuration of the EA modulator integrated semiconductor laser according to the first conventional example shown in FIG. 2, the semiconductor laser 100 and the EA modulator 200 are electrically completely separated. Separate electrical signals can be applied to the semiconductor laser 100 and the EA modulator 200.

そして、この第１の従来例に係るＥＡ変調器集積半導体レーザの構成において、ＥＡ変調器２００のｐ側電極２１６に差動ＮＲＺ（Ｎｏｎ Ｒｅｔｕｒｎ ｔｏ Ｚｅｒｏ）電気信号の一方の信号を、半導体レーザ１００のｐ側電極１２２に差動ＮＲＺ電気信号の一方の信号と位相がそろった正弦波電気信号を印加する。この正弦波電気信号により、半導体レーザ１００の光強度を調整し、各ビットの立ち上がり点や立ち下がり点で光強度が減少するように調整することで、光出力信号の波形により形成されるアイパターンにおいて、きれいなアイ開口を得ることができる。   In the configuration of the EA modulator integrated semiconductor laser according to the first conventional example, one signal of a differential NRZ (Non Return to Zero) electric signal is applied to the p-side electrode 216 of the EA modulator 200, and the semiconductor laser 100. A sine wave electric signal having the same phase as one of the differential NRZ electric signals is applied to the p-side electrode 122. An eye pattern formed by the waveform of the optical output signal by adjusting the light intensity of the semiconductor laser 100 by this sine wave electric signal and adjusting the light intensity to decrease at the rising and falling points of each bit. In this case, a clean eye opening can be obtained.

図３は、第２の従来例に係るＥＡ変調器集積半導体レーザの構成を示した断面図である。なお、図３（ａ）は半導体レーザ、図３（ｂ）はＥＡ変調器の構成を示した断面図である。
図３に示すように、第２の従来例に係るＥＡ変調器集積半導体レーザは、半導体レーザ３００及びＥＡ変調器４００を備えている。 FIG. 3 is a cross-sectional view showing a configuration of an EA modulator integrated semiconductor laser according to a second conventional example. 3A is a cross-sectional view showing the configuration of the semiconductor laser, and FIG. 3B is a cross-sectional view showing the configuration of the EA modulator.
As shown in FIG. 3, the EA modulator integrated semiconductor laser according to the second conventional example includes a semiconductor laser 300 and an EA modulator 400.

図３（ａ）に示すように、半導体レーザ３００は、ｎ−ＩｎＰ基板３１０、ｎ−ＩｎＰ層３１１、半絶縁ＩｎＰ３１２、活性層３１３、ｐ−ＩｎＰ３１４、回折格子を形成したガイド層３１５、ｐ−ＩｎＰ３１６、ｐ−コンタクト層３１７、ｐ側電極３１８及びｎ側電極３１９を備えている。   As shown in FIG. 3A, the semiconductor laser 300 includes an n-InP substrate 310, an n-InP layer 311, a semi-insulating InP 312, an active layer 313, a p-InP 314, a guide layer 315 formed with a diffraction grating, a p- InP 316, p-contact layer 317, p-side electrode 318, and n-side electrode 319 are provided.

また、図３（ｂ）に示すように、ＥＡ変調器４００は、ｎ−ＩｎＰ基板４１０、半絶縁ＩｎＰ４１１、ｎ−ＩｎＰ４１２、ｎ−コンタクト層４２３、ｎ−ＩｎＰ４１４、半絶縁ＩｎＰ４１５、吸収層４１６、ｐ−ＩｎＰ４１７、ｐ−コンタクト層４１８、絶縁層４１９、ｐ側電極４２０及びｎ側電極４２１を備えている。
さらに、ＥＡ変調器４００は、差動ドライバー４３０、正論理の信号線４３１及び負論理の信号線４３２を備えている。 As shown in FIG. 3B, the EA modulator 400 includes an n-InP substrate 410, a semi-insulating InP411, an n-InP412, an n-contact layer 423, an n-InP414, a semi-insulating InP415, an absorption layer 416, A p-InP 417, a p-contact layer 418, an insulating layer 419, a p-side electrode 420, and an n-side electrode 421 are provided.
Further, the EA modulator 400 includes a differential driver 430, a positive logic signal line 431, and a negative logic signal line 432.

図３に示した第２の従来例に係るＥＡ変調器集積半導体レーザにおいて、一般に、半導体レーザ３００のｎ−ＩｎＰ基板３１０とＥＡ変調器４００のｎ−ＩｎＰ基板４１０は共通である。また、活性層３１３と吸収層４１６はバットジョイントにより接合されている。さらに、半導体レーザ３００のｐ側電極３１８と、ＥＡ変調器４００のｐ側電極４２０と、ＥＡ変調器４００のｎ側電極４２１は分離溝によってそれぞれ分離されている。さらに、半絶縁ＩｎＰ層４１１によって、半導体レーザ３００のｎ側電極３１９もＥＡ変調器４００のｐ側電極４２０及びｎ側電極４２１から分離されている。   In the EA modulator integrated semiconductor laser according to the second conventional example shown in FIG. 3, the n-InP substrate 310 of the semiconductor laser 300 and the n-InP substrate 410 of the EA modulator 400 are generally common. The active layer 313 and the absorption layer 416 are joined by a butt joint. Further, the p-side electrode 318 of the semiconductor laser 300, the p-side electrode 420 of the EA modulator 400, and the n-side electrode 421 of the EA modulator 400 are separated by a separation groove. Further, the n-side electrode 319 of the semiconductor laser 300 is also separated from the p-side electrode 420 and the n-side electrode 421 of the EA modulator 400 by the semi-insulating InP layer 411.

以上説明したように、図３に示した第２の従来例に係るＥＡ変調器集積半導体レーザの構成によれば、半導体レーザ３００とＥＡ変調器４００とが電気的に完全に分離されるので、半導体レーザ３００のｎ側電極３１９とＥＡ変調器４００のｎ側電極４２１に別々の電気信号を印加することができる。
すなわち、正論理信号を正論理の信号線４３１に、負論理信号を負論理の信号線４３２に印加することで正論理と負論理を有効に活用することができる。 As described above, according to the configuration of the EA modulator integrated semiconductor laser according to the second conventional example shown in FIG. 3, the semiconductor laser 300 and the EA modulator 400 are electrically separated from each other. Different electrical signals can be applied to the n-side electrode 319 of the semiconductor laser 300 and the n-side electrode 421 of the EA modulator 400.
That is, by applying a positive logic signal to the positive logic signal line 431 and a negative logic signal to the negative logic signal line 432, the positive logic and the negative logic can be effectively utilized.

以上説明したように、図２，３に示した第１，２の従来例に係るＥＡ変調器集積半導体レーザのいずれも優れた特性を有するが、以下のような問題があった。
（１） 計４つある電極のうち、３つが半導体形成面、１つが基板面に存在する。そのためフリップ実装による４電極一括のマウントが不可能になり、ワイヤーボンディング等による電極の引き出しが必要になる。
（２） 図２に示す半導体レーザ１００の半絶縁ＩｎＰ層１１１、図３に示すＥＡ変調器４００の半絶縁ＩｎＰ層４１１のように、素子の一部分（すなわち、半導体レーザ１００又はＥＡ変調器４００の一方）にのみ半絶縁ＩｎＰを形成する必要があるため、半絶縁ＩｎＰ層の形成及び加工が必要になる。
これらの理由により、プロセスや実装工程が複雑になり、歩留まりよく安価にモジュールを作製することができないという問題があった。 As described above, the EA modulator integrated semiconductor lasers according to the first and second conventional examples shown in FIGS. 2 and 3 have excellent characteristics, but have the following problems.
(1) Of the four electrodes in total, three are on the semiconductor formation surface and one is on the substrate surface. Therefore, it is impossible to mount four electrodes at a time by flip mounting, and it is necessary to pull out the electrodes by wire bonding or the like.
(2) A part of the element (that is, the semiconductor laser 100 or the EA modulator 400, such as the semi-insulating InP layer 111 of the semiconductor laser 100 shown in FIG. 2 and the semi-insulating InP layer 411 of the EA modulator 400 shown in FIG. 3). On the other hand, since it is necessary to form semi-insulating InP only in (1), formation and processing of a semi-insulating InP layer are necessary.
For these reasons, the process and the mounting process become complicated, and there is a problem that a module cannot be manufactured with a high yield and a low cost.

金澤慈、他７名、「半絶縁基板上１．３μｍ帯ＤＦＢレーザ」、２００９年 電子情報通信学会総合大会 Ｃ−４−３３、エレクトロニクス講演論文集１、２００９年、ｐ．２８１Jin Kanazawa and 7 others, “1.3 μm band DFB laser on semi-insulating substrate”, 2009 IEICE General Conference C-4-33, Electronics Lectures Collection 1, 2009, p. 281

上述したように、図２，３に示した第１，２の従来例に係るＥＡ変調器集積半導体レーザにおいては、プロセスや実装工程が複雑になり、歩留まりよく安価にモジュールを作製することができないという問題があった。
以上のことから、本発明は、歩留まりよく安価にモジュールを作製することができる半導体レーザ及び半導体光変調器差動型半導体装置を提供することを目的とする。 As described above, in the EA modulator integrated semiconductor lasers according to the first and second conventional examples shown in FIGS. 2 and 3, the process and the mounting process are complicated, and a module cannot be manufactured with a high yield and low cost. There was a problem.
In view of the above, an object of the present invention is to provide a semiconductor laser and a semiconductor optical modulator differential type semiconductor device capable of producing a module with high yield and low cost.

上記の課題を解決する第１の発明に係る半導体レーザ及び半導体光変調器差動型半導体装置は、
半導体レーザと半導体光変調器とを備える半導体装置において、
半絶縁体基板上に前記半導体レーザと前記半導体光変調器を形成し、
前記半導体レーザのｐ側電極及びｎ側電極を前記半導体レーザの表面側に配置し、
前記半導体光変調器のｐ側電極及びｎ側電極を前記半導体光変調器の表面側に配置し、
前記半導体レーザのｐ側電極とｎ側電極を第１の分離溝により分離し、前記半導体光変調器のｐ側電極とｎ側電極を第２の分離溝により分離し、
前記半導体レーザのｐ側電極及びｎ側電極と、前記半導体光変調器のｐ側電極及びｎ側電極を第３の分離溝により分離し、
前記半導体光変調器のｐ側電極及びｎ側電極に差動電気信号を印加する差動電気信号印加手段を備えると共に、前記半導体レーザのｐ側電極に前記差動電気信号と周波数及び位相が同一の正弦波電気信号を印加する正弦波電気信号印加手段を備える
ことを特徴とする。 A semiconductor laser and a semiconductor optical modulator differential type semiconductor device according to a first invention for solving the above-described problems are:
In a semiconductor device comprising a semiconductor laser and a semiconductor optical modulator,
Forming the semiconductor laser and the semiconductor optical modulator on a semi-insulator substrate;
The p-side and n-side electrodes of the semiconductor laser and placed on the surface side of the semiconductor laser,
Place the p-side and n-side electrodes of the semiconductor optical modulator on the surface side of the semiconductor optical modulator,
The p-side electrode and the n-side electrode of the semiconductor laser are separated by a first separation groove, and the p-side electrode and the n-side electrode of the semiconductor optical modulator are separated by a second separation groove,
The p-side electrode and n-side electrode of the semiconductor laser and the p-side electrode and n-side electrode of the semiconductor optical modulator are separated by a third separation groove,
A differential electric signal applying means for applying a differential electric signal to the p-side electrode and the n-side electrode of the semiconductor optical modulator, and the same frequency and phase as the differential electric signal of the p-side electrode of the semiconductor laser; The sine wave electric signal applying means for applying the sine wave electric signal is provided.

本発明によれば、歩留まりよく安価にモジュールを作製することができる半導体レーザ及び半導体光変調器差動型半導体装置を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the semiconductor laser and semiconductor optical modulator differential type semiconductor device which can produce a module with high yield and low cost can be provided.

本発明の第１の実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置の構成を示した断面図である。1 is a cross-sectional view showing a configuration of a semiconductor laser and a semiconductor optical modulator differential type semiconductor device according to a first embodiment of the present invention. 第１の従来例に係るＥＡ変調器集積半導体レーザの構成を示した断面図である。It is sectional drawing which showed the structure of the EA modulator integrated semiconductor laser which concerns on a 1st prior art example. 第２の従来例に係るＥＡ変調器集積半導体レーザの構成を示した断面図である。It is sectional drawing which showed the structure of the EA modulator integrated semiconductor laser which concerns on a 2nd prior art example.

以下、本発明に係る半導体レーザ及び半導体光変調器差動型半導体装置を実施するための形態について、図面を参照しながら説明する。   Hereinafter, embodiments for implementing a semiconductor laser and a semiconductor optical modulator differential semiconductor device according to the present invention will be described with reference to the drawings.

以下、本発明の第１の実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置について説明する。
図１は、本発明の第１の実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置の構成を示した断面図である。なお、図１（ａ）は半導体レーザ、図１（ｂ）はＥＡ変調器の構成を示した断面図である。
図１に示すように、本実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置は、半導体レーザ１及びＥＡ変調器２を備えている。 A semiconductor laser and a semiconductor optical modulator differential semiconductor device according to a first embodiment of the present invention will be described below.
FIG. 1 is a cross-sectional view showing a configuration of a semiconductor laser and a semiconductor optical modulator differential type semiconductor device according to a first embodiment of the present invention. 1A is a cross-sectional view showing the configuration of the semiconductor laser, and FIG. 1B is a cross-sectional view showing the configuration of the EA modulator.
As shown in FIG. 1, the semiconductor laser and the semiconductor optical modulator differential type semiconductor device according to this embodiment include a semiconductor laser 1 and an EA modulator 2.

図１（ａ）に示すように、半導体レーザ１は、半絶縁ＩｎＰ基板１０、ｎ−ＩｎＰ１１、ｎ−コンタクト層１２、ｎ−ＩｎＰ１３、半絶縁ＩｎＰ１４、活性層１５、ｐ−ＩｎＰ１６、回折格子を形成したガイド層１７、ｐ−ＩｎＰ１８、ｐ−コンタクト層１９、絶縁層２０ｐ側電極２１及びｎ側電極２２を備えている。   As shown in FIG. 1A, a semiconductor laser 1 includes a semi-insulating InP substrate 10, an n-InP 11, an n-contact layer 12, an n-InP 13, a semi-insulating InP 14, an active layer 15, a p-InP 16, and a diffraction grating. The formed guide layer 17, p-InP 18, p-contact layer 19, insulating layer 20 p side electrode 21 and n side electrode 22 are provided.

また、図１（ｂ）に示すように、ＥＡ変調器２は、半絶縁ＩｎＰ基板３０、ｎ−ＩｎＰ３１、ｎ−コンタクト層３２、ｎ−ＩｎＰ３３、半絶縁ＩｎＰ３４、吸収層３５、ｐ−ＩｎＰ３６、ｐ−コンタクト層３７、絶縁層３８、ｐ側電極３９及びｎ側電極４０を備えている。
さらに、ＥＡ変調器２は、差動ドライバー５０、正論理の信号線５１及び負論理の信号線５２を備えている。 As shown in FIG. 1B, the EA modulator 2 includes a semi-insulating InP substrate 30, an n-InP 31, an n-contact layer 32, an n-InP 33, a semi-insulating InP 34, an absorption layer 35, a p-InP 36, A p-contact layer 37, an insulating layer 38, a p-side electrode 39, and an n-side electrode 40 are provided.
Further, the EA modulator 2 includes a differential driver 50, a positive logic signal line 51, and a negative logic signal line 52.

図１に示した本実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置おいては、半導体レーザ１の半絶縁ＩｎＰ基板１０とＥＡ変調器２の半絶縁ＩｎＰ基板３０は共通である。また、活性層１５と吸収層３５はバットジョイントにより接合されている。   In the semiconductor laser and the semiconductor optical modulator differential semiconductor device according to this embodiment shown in FIG. 1, the semi-insulating InP substrate 10 of the semiconductor laser 1 and the semi-insulating InP substrate 30 of the EA modulator 2 are common. . The active layer 15 and the absorption layer 35 are joined by a butt joint.

半導体レーザ１のｐ側電極と半導体レーザ１のｎ側電極２２は分離溝２３によって分離されている。また、ＥＡ変調器２のｐ側電極３９とＥＡ変調器２のｎ側電極４０は、分離溝４１によって分離されている。さらに、半導体レーザ１のｐ側電極２１及びｎ側電極２２とＥＡ変調器２のｐ側電極３９及びｎ側電極４０は分離溝（図示省略）によってそれぞれ分離されている。   The p-side electrode of the semiconductor laser 1 and the n-side electrode 22 of the semiconductor laser 1 are separated by a separation groove 23. Further, the p-side electrode 39 of the EA modulator 2 and the n-side electrode 40 of the EA modulator 2 are separated by a separation groove 41. Further, the p-side electrode 21 and the n-side electrode 22 of the semiconductor laser 1 and the p-side electrode 39 and the n-side electrode 40 of the EA modulator 2 are separated from each other by a separation groove (not shown).

以上説明したように、図１に示した本実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置の構成によれば、半導体レーザ１とＥＡ変調器２とが電気的に完全に分離されるので、差動ドライバー５０の正論理と負論理を有効利用することができる。   As described above, according to the configuration of the semiconductor laser and the semiconductor optical modulator differential semiconductor device according to the present embodiment shown in FIG. 1, the semiconductor laser 1 and the EA modulator 2 are completely separated electrically. Therefore, the positive logic and the negative logic of the differential driver 50 can be used effectively.

本実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置の構成によれば、４つの電極、すなわち半導体レーザ１のｐ側電極２１及びｎ側電極２２並びにＥＡ変調器２のｐ側電極３９とｎ側電極４０が全て同一の方向にあるので、一括にフリップチップを実装することができる。また、半導体レーザ１及びＥＡ変調器２が共通の半絶縁ＩｎＰ基板１０，３０上に形成されているため、図２，３に示した第１，２の従来例に係るＥＡ変調器集積半導体レーザのように半絶縁ＩｎＰ層１１１，４１１の成長や加工が不要となるため、安価で歩留まり良くモジュールを作製することができる。   According to the configuration of the semiconductor laser and the semiconductor optical modulator differential semiconductor device according to the present embodiment, four electrodes, that is, the p-side electrode 21 and the n-side electrode 22 of the semiconductor laser 1 and the p-side electrode of the EA modulator 2 are used. Since the 39 and the n-side electrode 40 are all in the same direction, flip chips can be mounted together. Since the semiconductor laser 1 and the EA modulator 2 are formed on the common semi-insulating InP substrates 10 and 30, the EA modulator integrated semiconductor lasers according to the first and second conventional examples shown in FIGS. Thus, since the growth and processing of the semi-insulating InP layers 111 and 411 are not necessary, a module can be manufactured at a low cost and with a high yield.

以下、本発明の第２の実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置について説明する。
上述した第１の実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置の構成によれば、半導体レーザ１とＥＡ変調器２とが電気的に完全に分離されるので、半導体レーザ１とＥＡ変調器２に別々の電気信号を印加することができる。 A semiconductor laser and a semiconductor optical modulator differential semiconductor device according to a second embodiment of the present invention will be described below.
According to the configuration of the semiconductor laser and the semiconductor optical modulator differential semiconductor device according to the first embodiment described above, the semiconductor laser 1 and the EA modulator 2 are completely separated electrically. And separate electrical signals can be applied to the EA modulator 2.

この第１の実施例に係る半導体レーザ及び半導体光変調器差動型半導体装置の構成において、ＥＡ変調器２のｐ側電極３９及びｎ側電極４０に差動ＮＲＺ電気信号を、半導体レーザ１のｐ側電極２１に差動ＮＲＺ電気信号と位相がそろった正弦波電気信号を印加する。この正弦波電気信号により、半導体レーザ１の光強度を調整し、各ビットの中心付近で光強度が増加し、各ビットの立ち上がり点や立ち下がり点で光強度が減少するように調整する。このようにすることで、光出力信号の波形により形成されるアイパターンにおいて、きれいなアイ開口を得ることができる。   In the configuration of the semiconductor laser and the semiconductor optical modulator differential semiconductor device according to the first embodiment, the differential NRZ electric signal is applied to the p-side electrode 39 and the n-side electrode 40 of the EA modulator 2 and the semiconductor laser 1 A sine wave electric signal having the same phase as that of the differential NRZ electric signal is applied to the p-side electrode 21. With this sine wave electric signal, the light intensity of the semiconductor laser 1 is adjusted so that the light intensity increases near the center of each bit and the light intensity decreases at the rising and falling points of each bit. By doing so, it is possible to obtain a clean eye opening in the eye pattern formed by the waveform of the optical output signal.

以上説明したように、本発明に係る半導体レーザ及び半導体光変調器差動型半導体装置によれば、一括にフリップチップを実装することができる。また、本発明に係る半導体レーザ及び半導体光変調器差動型半導体装置においては半導体レーザ１及びＥＡ変調器２は共通の半絶縁ＩｎＰ基板１０，３０上に形成されているため、図２，３に示した第１，２の従来例に係るＥＡ変調器集積半導体レーザのように半絶縁ＩｎＰ層１１１，４１１の成長や加工が不要となるため、安価で歩留まり良くモジュールを作製することができる。
なお、本発明における半絶縁ＩｎＰとしては、ルテニウム、鉄をドープしたＩｎＰを用いることができる。 As described above, according to the semiconductor laser and the semiconductor optical modulator differential type semiconductor device according to the present invention, flip chips can be mounted in a lump. Further, in the semiconductor laser and the semiconductor optical modulator differential semiconductor device according to the present invention, the semiconductor laser 1 and the EA modulator 2 are formed on the common semi-insulating InP substrates 10 and 30, so that FIGS. Since the growth and processing of the semi-insulating InP layers 111 and 411 are not required unlike the EA modulator integrated semiconductor lasers according to the first and second conventional examples shown in FIG.
As the semi-insulating InP in the present invention, ruthenium or iron-doped InP can be used.

本発明は、例えば、光送信器、特に、ＥＡ変調器と半導体レーザを集積したＥＡ変調器集積半導体レーザに利用することが可能である。   The present invention can be used, for example, in an optical transmitter, in particular, an EA modulator integrated semiconductor laser in which an EA modulator and a semiconductor laser are integrated.

１ 半導体レーザ
２ ＥＡ変調器
１０ 半絶縁ＩｎＰ基板
１１ ｎ−ＩｎＰ
１２ ｎ−コンタクト層
１３ ｎ−ＩｎＰ
１４ 半絶縁ＩｎＰ
１５ 活性層
１６ ｐ−ＩｎＰ
１７ 回折格子を形成したガイド層
１８ ｐ−ＩｎＰ
１９ ｐ−コンタクト層
２０ 絶縁層
２１ ｐ側電極
２２ ｎ側電極
２３ 分離溝
３０ 半絶縁ＩｎＰ基板
３１ ｎ−ＩｎＰ
３２ ｎ−コンタクト層
３３ ｎ−ＩｎＰ
３４ 半絶縁ＩｎＰ
３５ 吸収層
３６ ｐ−ＩｎＰ
３７ ｐ−コンタクト層
３８ 絶縁層
３９ ｐ側電極
４０ ｎ側電極
４１ 分離溝
５０ 差動ドライバー
５１ 正論理の信号線
５２ 負論理の信号線 DESCRIPTION OF SYMBOLS 1 Semiconductor laser 2 EA modulator 10 Semi-insulating InP substrate 11 n-InP
12 n-contact layer 13 n-InP
14 Semi-insulating InP
15 Active layer 16 p-InP
17 Guide layer with diffraction grating 18 p-InP
19 p-contact layer 20 insulating layer 21 p-side electrode 22 n-side electrode 23 separation groove 30 semi-insulating InP substrate 31 n-InP
32 n-contact layer 33 n-InP
34 Semi-insulating InP
35 Absorbing layer 36 p-InP
37 p-contact layer 38 insulating layer 39 p-side electrode 40 n-side electrode 41 separation groove 50 differential driver 51 positive logic signal line 52 negative logic signal line

Claims (1)

半導体レーザと半導体光変調器とを備える半導体装置において、
半絶縁体基板上に前記半導体レーザと前記半導体光変調器を形成し、
前記半導体レーザのｐ側電極及びｎ側電極を前記半導体レーザの表面側に配置し、
前記半導体光変調器のｐ側電極及びｎ側電極を前記半導体光変調器の表面側に配置し、
前記半導体レーザのｐ側電極とｎ側電極を第１の分離溝により分離し、前記半導体光変調器のｐ側電極とｎ側電極を第２の分離溝により分離し、
前記半導体レーザのｐ側電極及びｎ側電極と、前記半導体光変調器のｐ側電極及びｎ側電極を第３の分離溝により分離し、
前記半導体光変調器のｐ側電極及びｎ側電極に差動電気信号を印加する差動電気信号印加手段を備えると共に、前記半導体レーザのｐ側電極に前記差動電気信号と周波数及び位相が同一の正弦波電気信号を印加する正弦波電気信号印加手段を備える
ことを特徴とする半導体レーザ及び半導体光変調器差動型半導体装置。 In a semiconductor device comprising a semiconductor laser and a semiconductor optical modulator,
Forming the semiconductor laser and the semiconductor optical modulator on a semi-insulator substrate;
The p-side and n-side electrodes of the semiconductor laser and placed on the surface side of the semiconductor laser,
Place the p-side and n-side electrodes of the semiconductor optical modulator on the surface side of the semiconductor optical modulator,
Separating the p-side electrode and the n-side electrode of the semiconductor laser by a first separation groove, and separating the p-side electrode and the n-side electrode of the semiconductor optical modulator by a second separation groove;
The p-side electrode and n-side electrode of the semiconductor laser and the p-side electrode and n-side electrode of the semiconductor optical modulator are separated by a third separation groove,
A differential electric signal applying means for applying a differential electric signal to the p-side electrode and the n-side electrode of the semiconductor optical modulator, and the same frequency and phase as the differential electric signal of the p-side electrode of the semiconductor laser; A semiconductor laser and a semiconductor optical modulator differential semiconductor device, comprising: a sine wave electric signal applying means for applying the sine wave electric signal.
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