JP5386074B2 - Power receiving device - Google Patents

Description

  The present invention relates to a semiconductor device and a power receiving device. In particular, the present invention relates to a semiconductor device and a power receiving device that transmit and receive data via radio waves and receive power wirelessly.

  In recent years, individual identification technology using radio communication such as radio waves or electromagnetic waves has attracted attention. In particular, as a semiconductor device that transmits and receives data by wireless communication, an individual identification technique using an RFID (Radio Frequency Identification) tag is attracting attention. The RFID tag is also called an IC (Integrated Circuit) tag, an IC chip, an RF (Radio Frequency) tag, a wireless tag, or an electronic tag. An individual identification technique using an RFID tag or the like has begun to be used for production, management, individual authentication, etc. of individual objects.

  RFID tags can be roughly divided into two types depending on whether the power supply is built in or the power supply is received from the outside. In other words, an active type (active type) RFID tag with a built-in power source capable of transmitting radio waves or electromagnetic waves including information on the RFID tag and power from external radio waves or electromagnetic waves (carrier waves) are used. There are two types of passive type (passive type) RFID tags to be driven. (See Patent Document 1 for the active type and Patent Document 2 for the passive type.) Among these, the active type RFID tag has a built-in power source for driving the RFID tag and has a battery as a power source. Further, in the passive type, a power source for driving the RFID tag is created using electric power from an external radio wave or electromagnetic wave (carrier wave), and a configuration without a battery is realized.

  FIG. 3 is a block diagram showing a specific configuration of an active type RFID tag (semiconductor device 3100). In the active type semiconductor device 3100 in FIG. 3, a signal received by the antenna circuit 3101 is input to the demodulation circuit 3105 and the amplifier 3106 in the signal processing circuit 3102. Usually, a communication signal is sent to a carrier of 13.56 MHz, 915 MHz or the like after being subjected to processing such as ASK modulation or PSK modulation. In ASK modulation, a digital signal is represented by a difference in amplitude and modulated. In PSK modulation, a digital signal is represented by a difference in phase of a carrier wave having a constant frequency and modulated. Here, an example in which a 13.56 MHz carrier is used as a signal is shown. In FIG. 3, in order to process a signal, a reference clock signal is required, and here, a 13.56 MHz carrier is used as the clock signal. The amplifier 3106 amplifies the 13.56 MHz carrier and supplies it to the logic circuit 3107 as a clock signal. Further, the ASK modulated or PSK modulated signal is demodulated by the demodulation circuit 3105. The demodulated signal is transmitted to the logic circuit 3107 and analyzed. The signal analyzed by the logic circuit 3107 is transmitted to the memory control circuit 3108. Based on this signal, the memory control circuit 3108 controls the memory circuit 3109, extracts the data stored in the memory circuit 3109, and sends it to the logic circuit 3110. . The data is encoded by the logic circuit 3110 and then amplified by the amplifier 3111, and the modulation circuit 3112 modulates the carrier by the signal. On the other hand, power of the semiconductor device 3100 in FIG. 3 is supplied through a power supply circuit 3104 by a battery 3103 provided outside the signal processing circuit 3102. The power supply circuit 3104 supplies power to the amplifier 3106, the demodulation circuit 3105, the logic circuit 3107, the memory control circuit 3108, the memory circuit 3109, the logic circuit 3110, the amplifier 3111, the modulation circuit 3112, and the like.

  FIG. 4 is a block diagram showing a specific configuration of a passive type RFID tag (semiconductor device 3200). In the passive type semiconductor device 3200 in FIG. 4, a signal received by the antenna circuit 3201 is input to the demodulation circuit 3205 and the amplifier 3206 in the signal processing circuit 3202. Usually, a communication signal is sent after a carrier such as 13.56 MHz or 915 MHz is subjected to processing such as ASK modulation or PSK modulation. Here, an example in which a 13.56 MHz carrier is used as a signal is shown. In FIG. 4, in order to process a signal, a reference clock signal is required. Here, a 13.56 MHz carrier is used as the clock signal. The amplifier 3206 amplifies the 13.56 MHz carrier and supplies it to the logic circuit 3207 as a clock signal. Further, the ASK modulated or PSK modulated signal is demodulated by the demodulation circuit 3205. The demodulated signal is transmitted to the logic circuit 3207 and analyzed. The signal analyzed by the logic circuit 3207 is transmitted to the memory control circuit 3208. Based on this signal, the memory control circuit 3208 controls the memory circuit 3209, extracts the data stored in the memory circuit 3209, and sends it to the logic circuit 3210. . The data is encoded by the logic circuit 3210 and then amplified by the amplifier 3211, and the modulation circuit 3212 modulates the carrier by the signal. On the other hand, power of the semiconductor device 3200 in FIG. 4 is supplied by rectifying a signal input to the rectifier circuit 3203 and inputting the rectified signal to the power supply circuit 3204. The power supply circuit 3204 supplies power to the amplifier 3206, the demodulation circuit 3205, the logic circuit 3207, the memory control circuit 3208, the memory circuit 3209, the logic circuit 3210, the amplifier 3211, the modulation circuit 3212, and the like.

  On the other hand, various electric appliances are spreading and various products are shipped to the market. Particularly in recent years, the spread of portable electronic devices has been remarkable. As an example, cellular phones, digital video cameras, and the like have become more convenient as display portions have become higher definition, battery durability has been improved, and power consumption has been reduced. As a power source for driving a portable electronic device, it has a structure with a built-in battery as power receiving means, and power is secured by the battery. A secondary battery (hereinafter referred to as a battery) such as a lithium ion battery is used as the battery, and the battery is charged using an AC adapter in which an outlet is inserted into a household AC power source as a power supply means. The present situation is (see Patent Document 3).

Note that examples of the electronic device including a battery include a bicycle, a car (including a moving means driven by electric power, regardless of whether it is an electric vehicle, a four-wheeled vehicle, or a two-wheeled vehicle).
JP 2005-316724 A JP-T-2006-503376 JP-A-2005-150022

  However, as shown in FIG. 3, in the active type RFID tag, the battery is consumed over time according to the intensity setting of radio waves necessary for transmission / reception of individual information or transmission / reception. There was a problem that power necessary for transmission and reception could not be generated. For this reason, there has been a problem that a semiconductor device such as an active type RFID tag needs to check the remaining capacity of the battery or replace the battery.

  In addition, as shown in FIG. 4, it is difficult for a passive type RFID tag to secure power for transmitting and receiving radio waves required for transmission / reception of signals from a long distance and to achieve a good transmission / reception state. There was a difficult problem. For this reason, a semiconductor device such as a passive type RFID tag has a distance from an antenna of a reader / writer, which is a power supply means, so that power can be sufficiently supplied by external radio waves or electromagnetic waves (carrier waves). There was a problem that it was limited to use in near cases.

  On the other hand, the frequency of use of mobile electronic devices such as mobile phones and digital video cameras is steadily increasing, but there are limits to improving battery capacity, durability, and low power consumption corresponding to usage time. There is. Furthermore, there are other methods for charging the battery, which is a power source built in the mobile phone and the digital video camera, in addition to charging from a charger using an AC adapter via a home AC power source or charging from a commercially available primary battery. There was no. Therefore, the charging operation is complicated for the user, and it is inconvenient because it is necessary to bring the AC adapter or the primary battery as the power supply means to move outdoors.

In addition, in an automobile that is a mobile electronic device, a battery is charged by a combustion engine, but in order to start the combustion engine, plug ignition by electric power charged in the battery is required. Therefore, when the battery runs out due to not using the car for a certain period of time, the plug cannot be ignited, and in order to start the combustion engine, it is necessary to supply power directly from the outside by wire. It was disadvantageous in terms of safety and convenience.

Furthermore, in charging by an AC adapter from a household AC power source or charging from a commercially available primary battery, it is necessary to provide an external terminal as a conductive portion to the battery in the mobile electronic device. For this reason, the external terminal is exposed or the external terminal is exposed via the protection unit. For this reason, there has been a problem that a failure occurs due to the damage of the external terminal or the defect of the external terminal.

  The present invention relates to a case where a semiconductor device such as an RFID tag can reduce deterioration with time of a battery used as a drive power source, can transmit / receive individual information, and has insufficient power from an external electromagnetic wave (carrier wave). Even if there is, a semiconductor device capable of maintaining a good transmission / reception state of individual information is provided.

  In order to solve the above problems, the present invention is characterized in that a power storage unit including a battery (also referred to as a secondary battery) or a capacitor is provided as a power source for supplying power in a semiconductor device such as an RFID tag. In addition, the present invention provides a means for supplying power to a power storage unit composed of the battery or the capacitor, in addition to an antenna for transmitting / receiving individual information to / from the outside, and charging the power storage unit composed of a battery or a capacitor. A plurality of antennas for wireless communication are provided, and a rectifier circuit corresponding to each antenna is provided.

  One embodiment of the present invention includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, a second antenna circuit, and a power storage unit connected to the signal processing circuit, The signal processing circuit includes a first rectifier circuit connected to the first antenna circuit, and a second rectifier circuit connected to the second antenna circuit, and the first antenna circuit Transmits a signal including data stored in the signal processing circuit or receives a signal including data stored in the signal processing circuit, and the second antenna circuit is connected to the power storage unit. A semiconductor device capable of wireless communication, wherein the second rectifier circuit is connected to a charging circuit, and the first antenna circuit and the second antenna circuit have different frequency bands corresponding to each other. It is.

  Another aspect of the present invention includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, a second antenna circuit, and a power storage unit connected to the signal processing circuit, The signal processing circuit includes a first rectifier circuit connected to the first antenna circuit, and a second rectifier circuit connected to the second antenna circuit, and the first antenna circuit Transmits a signal including data stored in the signal processing circuit or receives a signal including data stored in the signal processing circuit, and the second rectifier circuit is connected to a charging circuit. The second antenna circuit is a semiconductor device capable of wireless communication, wherein the second antenna circuit has an antenna that receives power for charging the power storage unit and has a length different from that of the antenna included in the first antenna circuit. .

  Another embodiment of the present invention includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group including a plurality of antenna circuits, a power storage unit connected to the signal processing circuit, The signal processing circuit includes a first rectifier circuit connected to the first antenna circuit, and a plurality of rectifier circuits connected to each of the plurality of antenna circuits of the antenna circuit group. And one of the plurality of antenna circuits is connected to one of the plurality of rectifier circuits, one of the plurality of rectifier circuits is connected to one of the plurality of antenna circuits, and the first antenna circuit is Transmitting a signal including data stored in the signal processing circuit or receiving a signal including data stored in the signal processing circuit, wherein the plurality of rectifier circuits are connected to a charging circuit; and the antenna circuit Group is said It receives electric power for charging the electric part, a and a semiconductor device capable of wireless communication characterized by having different antennas of lengths.

  Another embodiment of the present invention includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group including a plurality of antenna circuits, a power storage unit connected to the signal processing circuit, The signal processing circuit includes a first rectifier circuit connected to the first antenna circuit, and a plurality of rectifier circuits connected to each of the plurality of antenna circuits of the antenna circuit group. And one of the plurality of antenna circuits is connected to one of the plurality of rectifier circuits, one of the plurality of rectifier circuits is connected to one of the plurality of antenna circuits, and the first antenna circuit is A signal including data stored in the signal processing circuit is transmitted to the reader / writer, or a signal including data stored in the signal processing circuit is received from the reader / writer, and the plurality of rectifier circuits are charged. Connect to circuit Is, the antenna circuit group receives electric power for charging the power storage unit from an external radio signal, which is capable of wireless communication wherein a and having a different antenna of lengths.

  Another embodiment of the present invention includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group including a plurality of antenna circuits, a power storage unit connected to the signal processing circuit, The signal processing circuit includes a first rectifier circuit connected to the first antenna circuit, and a plurality of rectifier circuits connected to each of the plurality of antenna circuits of the antenna circuit group. And one of the plurality of antenna circuits is connected to one of the plurality of rectifier circuits, one of the plurality of rectifier circuits is connected to one of the plurality of antenna circuits, and the first antenna circuit is A signal including data stored in the signal processing circuit is transmitted to the reader / writer, or a signal including data stored in the signal processing circuit is received from the reader / writer, and the plurality of rectifier circuits are charged. Connect to circuit The antenna circuit group receives power for charging the power storage unit from an external wireless signal, and the first antenna circuit and the antenna circuit included in the antenna circuit group have different frequency bands. A semiconductor device capable of wireless communication.

  Another embodiment of the present invention includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group including a plurality of antenna circuits, a power storage unit connected to the signal processing circuit, The signal processing circuit includes a first rectifier circuit connected to the first antenna circuit, and a plurality of rectifier circuits connected to each of the plurality of antenna circuits of the antenna circuit group. And one of the plurality of antenna circuits is connected to one of the plurality of rectifier circuits, one of the plurality of rectifier circuits is connected to one of the plurality of antenna circuits, and the first antenna circuit is A signal including data stored in the signal processing circuit is transmitted or a signal including data stored in the signal processing circuit is received, and the plurality of rectifier circuits are connected to a charging circuit, and the charging circuit Charge and discharge circuit Is connected to the power storage unit to the antenna circuit group receives electric power for charging the power storage unit, a semiconductor device capable of wireless communication, characterized in that it comprises a and different antennas of lengths.

  Another embodiment of the present invention includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group including a plurality of antenna circuits, a power storage unit connected to the signal processing circuit, The signal processing circuit includes a first rectifier circuit connected to the first antenna circuit, and a plurality of rectifier circuits connected to each of the plurality of antenna circuits of the antenna circuit group. And one of the plurality of antenna circuits is connected to one of the plurality of rectifier circuits, one of the plurality of rectifier circuits is connected to one of the plurality of antenna circuits, and the first antenna circuit is A signal including data stored in the signal processing circuit is transmitted to the reader / writer, or a signal including data stored in the signal processing circuit is received from the reader / writer, and the plurality of rectifier circuits are charged. Connect to circuit The charging circuit is connected to the power storage unit through a charge / discharge circuit, and the antenna circuit group receives power for charging the power storage unit from an external wireless signal, and has antennas of different lengths. A semiconductor device capable of wireless communication.

  Another embodiment of the present invention includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group including a plurality of antenna circuits, a power storage unit connected to the signal processing circuit, The signal processing circuit includes a first rectifier circuit connected to the first antenna circuit, and a plurality of rectifier circuits connected to each of the plurality of antenna circuits of the antenna circuit group. And one of the plurality of antenna circuits is connected to one of the plurality of rectifier circuits, one of the plurality of rectifier circuits is connected to one of the plurality of antenna circuits, and the first antenna circuit is A signal including data stored in the signal processing circuit is transmitted to the reader / writer, or a signal including data stored in the signal processing circuit is received from the reader / writer, and the plurality of rectifier circuits are charged. Connect to circuit The charging circuit is connected to the power storage unit via a charge / discharge circuit, and the antenna circuit group receives power for charging the power storage unit from an external radio signal, and the first antenna circuit and the antenna circuit Each of the antenna circuits included in the group is a semiconductor device capable of wireless communication characterized in that the corresponding frequency band is different.

  In the present invention configured as described above, the power storage unit preferably supplies power to a power supply circuit included in the signal processing circuit.

  In the present invention configured as described above, any one of the first antenna circuit and the plurality of antenna circuits preferably receives a signal by an electromagnetic induction method.

  In the present invention configured as described above, the power storage unit preferably includes either one or both of a battery and a capacitor.

  Another embodiment of the present invention includes a plurality of antenna circuits, a signal processing circuit, and a power storage unit, and the signal processing circuit includes a plurality of rectifier circuits connected to each of the plurality of antenna circuits, The plurality of antenna circuits wirelessly receive power for charging the power storage unit via the signal processing circuit, and the plurality of rectifier circuits are connected to a charging circuit.

  Another embodiment of the present invention includes a plurality of antenna circuits, a signal processing circuit, and a power storage unit, and the signal processing circuit includes a plurality of rectifier circuits connected to each of the plurality of antenna circuits, The plurality of antenna circuits wirelessly receive power to charge the power storage unit via the signal processing circuit, the plurality of rectifier circuits are connected to a charging circuit, and the power reception is performed by a power feeder. Power receiving device.

  Another embodiment of the present invention includes a plurality of antenna circuits, a signal processing circuit, and a power storage unit, and the signal processing circuit includes a plurality of rectifier circuits connected to each of the plurality of antenna circuits, The plurality of antenna circuits wirelessly receive power for charging the power storage unit through the signal processing circuit, the plurality of rectifier circuits are connected to a charging circuit, and the charging circuit is connected to the charging circuit through the charging / discharging circuit. The power receiving device is connected to a power storage unit.

  In the present invention configured as described above, any one of the plurality of antenna circuits preferably receives a signal by an electromagnetic induction method.

  In the present invention configured as described above, the power storage unit preferably includes either one or both of a battery and a capacitor.

  In the present invention configured as described above, the battery is preferably a lithium battery, a nickel metal hydride battery, a nickel-cadmium battery, or an organic radical battery.

  Note that in the present invention, the term “connected” includes the case of being electrically connected and the case of being directly connected. Therefore, in the configuration disclosed by the present invention, in addition to a predetermined connection relationship, other elements (for example, a switch, a transistor, a capacitor, an inductor, a resistor, a diode, etc.) that can be electrically connected are arranged. May be. Alternatively, they may be arranged directly connected without interposing another element therebetween. In addition, it is a case where it is connected without interposing other elements that enable electrical connection, and includes only the case where it is directly connected, and does not include the case where it is electrically connected Shall be described as being directly connected. Note that the description of being electrically connected includes the case of being electrically connected and the case of being directly connected.

  Note that in the present invention, various types of transistors can be used as a transistor. Thus, there is no limitation on the type of applicable transistor. Therefore, a thin film transistor (TFT) using a non-single-crystal semiconductor film typified by amorphous silicon or polycrystalline silicon, a transistor formed using a semiconductor substrate or an SOI substrate, a MOS transistor, a junction transistor, or a bipolar transistor Alternatively, a transistor using a compound semiconductor such as ZnO or a-InGaZnO, a transistor using an organic semiconductor or a carbon nanotube, or another transistor can be used. Note that the non-single-crystal semiconductor film may contain hydrogen or halogen. In addition, various types of substrates on which transistors are arranged can be used, and are not limited to specific types. Therefore, for example, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, or the like can be used. Alternatively, a transistor may be formed using a certain substrate, and then the transistor may be moved to another substrate and placed on another substrate.

  For example, a multi-gate structure may be used as the structure of the transistor applied to the semiconductor device of the present invention. The multi-gate structure reduces off-current, improves the breakdown voltage of the transistor, improves reliability, and even when the drain-source voltage changes when operating in the saturation region, the drain-source current Change can be reduced. Alternatively, a structure in which gate electrodes are arranged above and below the channel may be employed. By adopting a structure in which gate electrodes are arranged above and below the channel, the channel region increases, so that the current value can be increased, a depletion layer can be easily formed, and the S value can be decreased. Here, the S value means a gate voltage value in a sub-threshold region where the drain current is changed by one digit at a constant drain voltage. Further, a structure in which a gate electrode is disposed above a channel, a structure in which a gate electrode is disposed below a channel, a normal staggered structure, or an inverted staggered structure may be employed. The channel region may be divided into a plurality of regions, may be connected in parallel, or may be connected in series. In addition, a source electrode or a drain electrode may overlap with the channel (or a part thereof). By using a structure in which a source electrode or a drain electrode overlaps with a channel (or part of it), it is possible to prevent electric charges from being accumulated in part of the channel and unstable operation. There may also be an LDD region. By providing the LDD region, the off-current is reduced, the breakdown voltage of the transistor is improved to improve reliability, and even when the drain-source voltage changes when operating in the saturation region, the drain-source current is reduced. Change can be reduced.

  Note that as described above, various types of transistors can be used for the semiconductor device of the present invention and can be formed over various substrates. Accordingly, the entire circuit may be formed over a glass substrate, may be formed over a plastic substrate, may be formed over a single crystal substrate, or may be formed over an SOI substrate. It may be. Since all the circuits included in the semiconductor device are formed over the same substrate, the number of components can be reduced to reduce the cost, and the number of connection points with circuit components can be reduced to improve reliability. Alternatively, a part of the circuit may be formed on a certain substrate, and another part of the circuit may be formed on another substrate. That is, all of the circuits may not be formed on the same substrate. For example, part of a circuit is formed using a transistor over a glass substrate, another part of the circuit is formed over a single crystal substrate, and the IC chip is connected by COG (Chip On Glass) to form the glass substrate. You may arrange on top. Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Auto Bonding) or a printed board. As described above, since a part of the circuit is formed on the same substrate, the number of parts can be reduced to reduce the cost, and the number of connection points with the circuit parts can be reduced to improve the reliability. In addition, power consumption increases in a portion where the drive voltage is high or a portion where the drive frequency is high. Therefore, if these circuits are not formed on the same substrate, an increase in power consumption can be prevented.

  Note that a semiconductor device in this specification refers to all devices that can function by utilizing semiconductor characteristics. Note that the corresponding frequency band means a frequency band in which the power received by the antenna circuit is 90% or more and the power reflected by the antenna circuit is 10% or less.

  In this specification, a device including an antenna, a circuit that charges a battery with an electromotive force generated by electromagnetic waves received by the antenna, and a medium that charges the electromotive force is also referred to as an RF battery or a wireless battery.

  For radio waves or electromagnetic waves that can be used in the present invention, signal frequencies include 125 kHz, 13.56 MHz, 915 MHz, 2.45 GHz, etc., and ISO standards and the like are set, respectively, but are not limited thereto. For example, 300 GHz to 3 THz, which is a submillimeter wave, 30 GHz to 300 GHz, which is a millimeter wave, 3 GHz to 30 GHz, which is a microwave, 300 MHz to 3 GHz, which is an ultrashort wave, 30 MHz to 300 MHz, which is a short wave, 3 MHz to 30 MHz, which is a short wave Any frequency of 300 kHz to 3 kHz, a long wave of 30 kHz to 300 kHz, and a super long wave of 3 kHz to 30 kHz can be used.

  In this specification, the battery is called a secondary battery or a storage battery, and is stored by converting electrical energy obtained from an external power source into a form of chemical energy, and taking it out again as necessary. Refers to the device. The capacitor is a device in which two insulated conductors are close to each other, and one of the two conductors has a positive charge and the other has a negative charge.

  Since the semiconductor device and the power receiving device of the present invention have the power storage unit, it is possible to prevent a shortage of power for transmitting and receiving individual information due to deterioration of the battery over time.

  In addition, the semiconductor device and the power receiving device of the present invention include a plurality of antennas and a plurality of rectifier circuits in order to wirelessly supply power to the power storage unit. Therefore, the power storage unit that supplies power for driving the semiconductor device and the power receiving device can be charged by external electromagnetic waves without being directly connected to the charger. As a result, it is not necessary to check the remaining capacity of the battery or replace the battery as in the case of a conventional active type RFID tag, and can continue to be used for a long period of time. In addition, by always holding power for driving an electronic device or the like on which a semiconductor device and a power receiving device are mounted in a battery, sufficient power for operating the semiconductor device and the electronic device can be obtained. The communication distance between the writer and the power feeder can be extended.

  In addition, the semiconductor device and the power receiving device of the present invention are provided with a plurality of corresponding antennas having different frequency bands. These are connected to the power storage unit and charged. Thereby, electromagnetic waves of various frequency bands can be used as electric power, and charging can be performed by efficiently using radio waves.

  Furthermore, by having one rectifier circuit corresponding to one antenna, it becomes easy to achieve impedance matching corresponding to each antenna. Further, since the return loss is reduced, the battery can be charged efficiently.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in the structures of the present invention described below, the same reference numeral is used in different drawings.
(Embodiment 1)

  One structural example of the semiconductor device of the present invention will be described with reference to block diagrams shown in FIGS. Note that in this embodiment, the case where a semiconductor device is used as an RFID tag or the like is described.

  A semiconductor device 100 illustrated in FIG. 1 includes a first antenna circuit 101, a signal processing circuit 103, a battery 104, a charging circuit 116, and an antenna-rectifier circuit group 117. The signal processing circuit 103 includes a first rectifier circuit 105, a power supply circuit 106, a demodulation circuit 108, an amplifier 109, a logic circuit 110, a memory control circuit 111, a memory circuit 112, a logic circuit 113, an amplifier 114, and a modulation circuit 115. ing. The antenna-rectifier circuit group 117 includes N-1 antenna-rectifier circuit pairs or the antenna circuit group 102 and the rectifier circuit group 107, including a pair of second antenna circuits 102a and a second rectifier circuit 107a. The These antenna circuit and rectifier circuit are represented as an Nth antenna circuit 102n and an Nth rectifier circuit 107n.

  In FIG. 2, the first antenna circuit 101 receives the radio wave 202a from the reader / writer 201 or transmits the radio wave 202a to the reader / writer 201, and the Nth antenna circuit 102n in the antenna-rectifier circuit group 117 A state in which the external radio wave 202b is received is shown in a block diagram. In FIG. 2, a radio wave 202a received by the first antenna circuit 101 is input to the power supply circuit 106 via the first rectifier circuit 105 to supply power, and at the same time, data included in the radio wave 202a is converted to the demodulation circuit 108. Etc. (see FIG. 1). In addition, each of the radio waves 202b (the radio wave 202c or the radio wave 202d) received by the antenna-rectifier circuit group 117 is input to the charging circuit 116 via the Nth rectifier circuit 107n to charge the battery 104.

  In the semiconductor device 100 described in this embodiment, the external radio wave 202b received by the Nth antenna circuit 102n is input to the charging circuit 116 through the Nth rectifier circuit 107n, and the battery 104 is charged. Accordingly, power is appropriately supplied from the battery 104 to the power supply circuit 106. That is, the battery 104 is charged wirelessly.

  Note that in the semiconductor device 100 described in this embodiment, an external radio wave 202b (hereinafter also referred to as a “wireless signal”) is used as a radio wave received by the Nth antenna circuit 102n in order to charge the battery 104. It is characterized by. As an external radio signal, for example, a radio wave of a mobile phone relay station (800-900 MHz band, 1.5 GHz, 1.9-2.1 GHz band, etc.), a radio wave oscillated from a mobile phone, a radio wave of a radio clock (40 kHz) Etc.), household AC power supply noise (60 Hz, etc.), radio waves generated randomly from other readers / writers (readers / writers that do not directly communicate with the semiconductor device 100), and the like. Further, as the Nth antenna circuit 102n, by providing a plurality of antenna circuits having different lengths and shapes and different rectifier circuits so that the frequency bands of the respective antennas are different, charging of the battery 104 is possible. Various wireless signals can be used.

  In addition, since the semiconductor device 100 charges the battery using an external wireless signal, the semiconductor device can be operated at low cost without requiring a separate charger or the like. In addition, the antenna provided in the Nth antenna circuit 102n has a plurality of antennas with various lengths and shapes that can easily receive a radio signal. By providing a plurality of antennas having different lengths and shapes, electric power can be supplied by receiving radio waves in various frequency bands. Further, either the first antenna circuit or the Nth antenna circuit may receive radio waves in the same frequency band.

  Note that each of the first antenna circuit 101 and the antenna circuit group 102 includes an antenna 401 and a resonant capacitor 402 as shown in FIG. 5A. In this specification, the antenna 401 and the resonant capacitor 402 are combined. This is called an antenna circuit 403. Each of the rectifier circuits of the first rectifier circuit 105 and the rectifier circuit group 107 includes an antenna connected to each rectifier circuit (for example, the Nth antenna circuit 102n is connected to the Nth rectifier circuit 107n). Any circuit that converts an alternating current signal induced by an electromagnetic wave received into a direct current signal may be used. For example, as shown in FIG. 5B, a rectifier circuit 407 may be configured by a diode 404, a diode 405, and a smoothing capacitor 406.

  Further, the shape of the antenna provided in the first antenna circuit 101 is not particularly limited. That is, as a signal transmission method applied to the first antenna circuit 101 in the semiconductor device 100, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be selected by the practitioner in consideration of the intended use, and an antenna having an optimal length and shape may be provided in accordance with the transmission method.

  For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a transmission method, a conductive film functioning as an antenna is formed in a ring shape (for example, an electromagnetic induction due to a change in electric field density). , Loop antenna) or spiral (eg, spiral antenna).

  When a microwave system (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a transmission system, it functions as an antenna in consideration of the wavelength of a radio wave used for signal transmission. The length and shape of the conductive film may be set as appropriate, and the conductive film functioning as an antenna can be formed in, for example, a linear shape (for example, a dipole antenna) or a flat shape (for example, a patch antenna). The shape of the conductive film functioning as an antenna is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

  Here, an example of the shape of the antenna provided in each of the first antenna circuit 101 and the antenna circuit group 102 is shown in FIG. For example, as shown in FIG. 6A, a structure in which one antenna 303A is arranged around a chip 302A provided with a signal processing circuit may be employed. Further, as shown in FIG. 6B, a structure may be adopted in which a thin antenna 303B is arranged around a chip 302B provided with a signal processing circuit so as to go around the chip 302B. 6C, a chip 302C provided with a signal processing circuit may have a shape like an antenna 303C for receiving high-frequency electromagnetic waves. Further, as shown in FIG. 6D, a shape like an antenna 303D that is 180 degrees omnidirectional (same reception is possible from any direction) with respect to a chip 302D provided with a signal processing circuit may be employed. Further, as shown in FIG. 6E, a shape like an antenna 303E which is elongated in a rod shape may be taken with respect to a chip 302E provided with a signal processing circuit. Each of the first antenna circuit and the antenna circuit group 102 can be used by combining antennas of these shapes.

  In FIG. 6, there is no particular limitation on the connection method between the chip 302A or the like provided with the signal processing circuit and the antenna 303A or the like. Taking FIG. 6A as an example, a method in which the antenna 303A and a chip 302A provided with a signal processing circuit are connected by wire bonding connection or bump connection, or a part of the chip is attached to the antenna 303A as an electrode. You may take In this method, the chip 302A can be attached to the antenna 303A using an ACF (Anisotropic Conductive Film). The length required for the antenna differs depending on the frequency used for reception. For example, when the frequency is 2.45 GHz, it may be about 60 mm (1/2 wavelength) or about 30 mm (1/4 wavelength).

  1 and 2, the battery 104 is charged by an external wireless signal input from the antenna circuit group 102 through each of the rectifier circuit groups 107, and the power charged in the battery 104 is used. Power can be supplied to the power supply circuit 106. By using the power charged in the battery 104, power can be supplied to the power supply circuit 106 even when sufficient power cannot be obtained from the first antenna circuit 101 of the semiconductor device 100 when the communication distance is extended. Thus, the semiconductor device 100 can be operated.

An example of a circuit configuration of the power supply circuit 106 in FIGS. 1 and 2 will be described with reference to FIG. The power supply circuit 106 includes a reference voltage circuit and a buffer amplifier. The reference voltage circuit includes a resistor 1001, a diode-connected transistor 1002, and a transistor 1003, and generates a reference voltage that is twice the source-gate voltage V _GS of the transistor. The buffer amplifier is composed of a differential circuit composed of a transistor 1005 and a transistor 1006, a current mirror circuit composed of a transistor 1007 and a transistor 1008, a current supply resistor 1004, a source grounded amplifier composed of a transistor 1009 and a resistor 1010. The

  In the power supply circuit shown in FIG. 7, when the current flowing from the output terminal is large, the current flowing through the transistor 1009 decreases, and when the current flowing from the output terminal is small, the current flowing through the transistor 1009 increases and flows through the resistor 1010. The current operates so as to be almost constant. Further, the potential of the output terminal is almost the same value as that of the reference voltage circuit. Although a power supply circuit having a reference voltage circuit and a buffer amplifier is shown here, the power supply circuit used in the present invention is not limited to FIG. 7 and may be a circuit having another configuration.

  Note that in this specification, a battery refers to a battery whose continuous use time can be recovered by charging. As the battery, it is preferable to use a battery formed in a sheet shape. For example, a lithium battery, preferably a lithium polymer battery using a gel electrolyte, a lithium ion battery, or the like can be used to reduce the size. . Of course, the battery is not limited to these as long as it is a rechargeable battery, and may be a chargeable / dischargeable battery such as a nickel metal hydride battery or a nickel-cadmium battery. Alternatively, a large capacity capacitor or the like may be used.

  Next, an operation when data is written from the reader / writer 201 to the semiconductor device 100 illustrated in FIGS. 1 and 2 will be described below. The signal received by the first antenna circuit 101 is half-wave rectified by the first rectifier circuit 105 and smoothed. The signal that has been half-wave rectified and smoothed by the first rectifier circuit 105 is input to the power supply circuit 106. The power supply circuit 106 supplies the voltage of the stabilized signal to the amplifier 109, the logic circuit 110, the memory control circuit 111, the memory circuit 112, the logic circuit 113, the amplifier 114, and the modulation circuit 115.

  A signal received by the first antenna circuit 101 is input to the logic circuit 110 through the amplifier 109 as a clock signal. Further, the signal input from the first antenna circuit 101 is demodulated by the demodulation circuit 108 and input to the logic circuit 110 as data.

  In the logic circuit 110, the input data is decoded. Since the reader / writer 201 encodes the data with a deformed mirror code, an NRZ-L code or the like and transmits it, the logic circuit 110 decodes the data. The decoded data is sent to the memory control circuit 111, and the data stored in the memory circuit 112 is read out accordingly. The memory circuit 112 needs to be a nonvolatile memory circuit that can be retained even when the power is turned off, and a mask ROM, a flash memory, or the like is used.

  Further, when the reader / writer 201 calls the data stored in the memory circuit 112 in the semiconductor device 100 shown in FIGS. 1 and 2, the following operation is performed. The signal received by the first antenna circuit 101 is half-wave rectified by the first rectifier circuit 105 and smoothed. The signal that has been half-wave rectified and smoothed by the first rectifier circuit 105 is input to the power supply circuit 106. The power supply circuit 106 supplies the voltage of the stabilized signal to the amplifier 109, the logic circuit 110, the memory control circuit 111, the memory circuit 112, the logic circuit 113, the amplifier 114, and the modulation circuit 115.

  Further, the AC signal received by the first antenna circuit 101 is input to the logic circuit 110 through the amplifier 109, and a logical operation is performed. Then, using the signal from the logic circuit 110, the memory control circuit 111 is controlled to call up data stored in the memory circuit 112. Next, after the data called from the memory circuit 112 is processed by the logic circuit 113 and amplified by the amplifier 114, the modulation circuit 115 operates. Data is processed in accordance with a method defined in standards such as ISO 14443, ISO 15693, and ISO 18000, but other standards may be used as long as consistency with a reader / writer is ensured.

  When the modulation circuit 115 operates, the impedance of the first antenna circuit 101 changes. As a result, a change occurs in the signal of the reader / writer 201 reflected by the first antenna circuit 101. By reading this change by the reader / writer 201, the data stored in the memory circuit 112 of the semiconductor device 100 can be read. Such a modulation method is called a load modulation method.

  Note that various types of transistors can be used as the transistor provided in the signal processing circuit 103. There are no limitations on the types of transistors that can be applied.

  Next, an operation when the semiconductor device 100 illustrated in FIG. 1 is charged with power from an external wireless signal will be described below. The external radio signal received by the Nth antenna circuit 102n is half-wave rectified and smoothed by the Nth rectifier circuit 107n. The signal that has been half-wave rectified and smoothed by the N-th rectifier circuit 107 n is supplied to the battery 104 through the charging circuit 116 as electric power. The power held in the battery 104 is used as power supplied to the power supply circuit 106.

  Hereinafter, a structural example of the semiconductor device of this embodiment will be described. Note that here, a case is described in which the antenna provided in the first antenna circuit 101 has a coil shape, and a plurality of antenna circuits including antennas having different lengths and shapes are provided as the Nth antenna circuit 102n.

  In the semiconductor device 100 of this embodiment, the first antenna circuit, the second antenna circuit, the signal processing circuit, and the battery are stacked or arranged in parallel on the substrate in consideration of the function and size. A layout may be used. In the signal processing circuit 103, a circuit associated with the first antenna circuit and a circuit associated with the second antenna circuit can be separately described.

  8 includes a first antenna circuit 704, an antenna circuit group including an antenna circuit 705a and an antenna circuit 705b, a signal processing circuit 103, and a charging circuit described with reference to FIG. 116, a chip 702 having a rectifier circuit group 107, and a battery 703. Note that the first antenna circuit 704 and the signal processing circuit 103 are connected, and the antenna circuit 705a and the antenna circuit 705b are connected to the rectifier circuit group 107.

  The radio wave received by the first antenna circuit 704 is input to the power supply circuit via the first rectifier circuit in the first signal processing circuit formed in the chip 702 to generate power, and is included in the radio wave. The signal is extracted by a demodulation circuit. Further, the charging circuit 116 and the antenna-rectifier circuit group 117 formed on the battery 703 and the chip 702 are connected, and radio waves received by the antenna circuit 705 a and the antenna circuit 705 b are rectified in the rectifier circuit group 107. It is input to the battery 703 through a circuit.

  Here, a schematic diagram in the case where a radio wave transmitted from the reader / writer 706 is received by the first antenna circuit 704 and an external radio signal 707 is received by the antenna circuit 705a and the antenna circuit 705b is shown. That is, this semiconductor device transmits and receives data to and from the reader / writer 706 through the first antenna circuit 704 and charges the battery 703 through the antenna circuit 705a and the antenna circuit 705b. Moreover, since the rectifier circuit corresponding to each is connected to the antenna circuit 705a and the antenna circuit 705b, it becomes easy to perform impedance matching corresponding to each antenna. Further, since the return loss is reduced, the battery can be charged efficiently.

  The battery 703 is also electrically connected to the signal processing circuit 103 provided in the chip 702, and power is appropriately supplied from the battery 703 to the power supply circuit in the signal processing circuit 103. The connection between the battery 703 and the signal processing circuit 103 or the antenna-rectifier circuit group 117 is not particularly limited. For example, the battery 703 and the signal processing circuit 103 or the antenna-rectifier circuit group 117 are connected by wire bonding or Connection can be made using bump connection. In addition, a part of the signal processing circuit 103 or the antenna-rectifier circuit group 117 may be provided as an electrode and bonded to a connection terminal with the battery 703. In this case, an anisotropic conductive film or the like is provided. Can be attached together.

  An example of the reader / writer 706 in FIG. 8 will be described with reference to FIG. The reader / writer 706 in FIG. 9 includes a receiving unit 501, a transmitting unit 502, a control unit 503, an interface unit 504, and an antenna circuit 505. The control unit 503 controls the reception unit 501 and the transmission unit 502 with respect to the data processing command and the data processing result under the control of the host device 506 via the interface unit 504. The transmission unit 502 modulates a data processing command to be transmitted to the semiconductor device 100 and outputs it as an electromagnetic wave from the antenna circuit 505. The receiving unit 501 demodulates the signal received by the antenna circuit 505 and outputs the result to the control unit 503 as a data processing result.

  In this embodiment, the antenna circuit 505 of the reader / writer 706 shown in FIG. 9 includes an antenna 507 and a resonance capacitor 508 that are connected to the reception unit 501 and the transmission unit 502 and constitute an LC parallel resonance circuit. At the time of reception, the antenna circuit 505 receives an electromotive force induced in the antenna circuit 505 by the signal output from the semiconductor device 100 as an electrical signal. At the time of transmission, an induction current is supplied to the antenna circuit 505 and a signal is transmitted from the antenna circuit 505 to the semiconductor device 100.

  Further, the antenna length and shape of the antenna circuit 705a and the antenna circuit 705b used for charging the battery 703 are not limited to the structure shown in FIG. Here, an example in which linear antennas (dipole antennas) having different lengths are provided as the antennas of the antenna circuit 705a and the antenna circuit 705b is shown. However, for example, a combination of a dipole antenna and a coiled antenna may be used. A dipole antenna and a patch antenna may be used in combination. As described above, by providing a plurality of antennas having different lengths and shapes as the antenna used for charging the battery 703, various wireless signals can be received, so that charging efficiency can be improved. In particular, by providing a combination of antennas having different shapes such as a patch antenna and a dipole antenna (for example, a folded dipole antenna is provided around the patch antenna), a limited space can be used effectively. In addition, by providing a plurality of corresponding antennas having different frequency bands, electromagnetic waves in various frequency bands can be used as power, and charging can be performed by efficiently using radio waves. Furthermore, by having one rectifier circuit corresponding to one antenna, it becomes easy to achieve impedance matching corresponding to each antenna. Further, since the return loss is reduced, the battery can be charged efficiently.

  Further, the first antenna circuit 704 used for transmitting and receiving signals to and from the reader / writer 706 is not limited to the structure shown in FIG. 8, and antennas of various lengths and shapes can be used depending on the transmission method applied as described above. Can be used.

  For example, the frequency of a signal transmitted and received between the first antenna circuit 704 and the reader / writer 706 is 125 kHz, 13.56 MHz, 915 MHz, 2.45 GHz, and the like, and ISO standards are set respectively. Of course, the frequency of the signal transmitted and received between the first antenna circuit 704 and the reader / writer 706 is not limited to this. For example, the submillimeter wave is 300 GHz to 3 THz, the millimeter wave is 30 GHz to 300 GHz, and the microwave is 3 GHz. -30 GHz, 300 MHz to 3 GHz which is an ultra high frequency wave, 30 MHz to 300 MHz which is an ultra high frequency wave, 3 MHz to 30 MHz which is a short wave, 300 kHz to 3 kHz which is a medium wave, 30 kHz to 300 kHz which is a long wave, and 3 kHz to 30 kHz which is an ultra high wave Can also be used. A signal transmitted and received between the first antenna circuit 704 and the reader / writer 706 is a signal obtained by modulating a carrier wave. The modulation method of the carrier wave may be analog modulation or digital modulation, and may be any of amplitude modulation, phase modulation, frequency modulation, and spread spectrum. Preferably, amplitude modulation or frequency modulation is used.

  8A and 8B, the first antenna circuit 704, the antenna circuit 705a, the antenna circuit 705b, the chip 702 having a signal processing circuit, a charging circuit, and an antenna-rectifier circuit group, and a battery 703 are provided over the same substrate 701. However, the semiconductor device described in this embodiment is not limited to the structure illustrated in FIGS.

  For example, as illustrated in FIG. 10, a substrate 701a provided with a chip 702a and a first antenna circuit 704 and a substrate 701b provided with a chip 702b, an antenna circuit 705a, an antenna circuit 705b, and a battery 703 are manufactured. A structure in which these are bonded together may be provided. The chip 702a is provided with a signal processing circuit, and the chip 702b is provided with a charging circuit and an antenna-rectifier circuit group.

  In FIG. 10, the radio wave received by the first antenna circuit 704 is input to the power supply circuit via the first rectifier circuit in the signal processing circuit provided in the chip 702a to be supplied with power and included in the radio wave. The extracted signal is extracted by the demodulation circuit. Radio waves received by the antenna circuit 705a and the antenna circuit 705b are input to the battery 703 from the charging circuit provided in the chip 702b and the rectifying circuit in the antenna-rectifier circuit group via the charging circuit.

  The first antenna circuit 704 is connected to a signal processing circuit provided in the chip 702a, and the antenna circuit 705a and the antenna circuit 705b are connected to each of the rectifier circuit group 107 and the charging circuit 116 provided in the chip 702b. ing. The battery 703 is provided so as to be electrically connected to the signal processing circuit provided in the chip 702a, each of the rectifier circuit groups provided in the chip 702b, and the charging circuit.

  Further, the connection between the battery 703 and each of the signal processing circuit or rectifier circuit group and the charging circuit is not particularly limited. For example, the battery 703 and each of the signal processing circuit or rectifier circuit group and the charging circuit are connected by wire bonding. Or using bump connection. In addition, each of the signal processing circuit or the rectifier circuit group and a part of the charging circuit can be used as an electrode and bonded to a connection terminal with the battery 703. In this case, an anisotropic conductive film or the like is used. Can be used together.

  Thus, after the chip and antenna used for signal transmission / reception with the reader / writer and the chip and antenna used for charging the battery are formed on different substrates, the substrates are bonded together to form the antenna and the battery. Can be formed large.

  Note that the battery 703 in FIGS. 8 and 10 can be provided simultaneously with each of the signal processing circuit or the rectifier circuit group and the charging circuit. For example, a lithium ion secondary battery thinned to about 10 μm to 100 μm may be formed simultaneously with each signal processing circuit or rectifier circuit group and charging circuit. Further, a thin film capacitor may be formed simultaneously with each of the signal processing circuit or the rectifier circuit group and the charging circuit to form the battery 703. 8 and 10, the battery 703 is provided so as to overlap with the antenna circuit 705a. Alternatively, the battery 703 may be provided so as to overlap with the first antenna circuit 704 (FIG. 11A). One antenna circuit 704, the antenna circuit 705a, and the antenna circuit 705b may be provided so as not to overlap.

  Alternatively, the battery 703 may be attached to be connected to each of the signal processing circuit or the rectifier circuit group and the charging circuit. For example, as shown in FIGS. 11B and 11C, a battery 703 is provided by being attached to each of a signal processing circuit, a rectifier circuit group, and a chip 702 on which a charging circuit is formed. In this case, the substrate can be attached to the front surface (the surface on which the chip 702 is formed) or the back surface, and the signal processing circuit, the rectifier circuit group included in the chip 702, the charging circuit, and the battery 703 are electrically connected to each other. Paste to connect. For example, connection terminals 711 such as bumps that are electrically connected to the chip 702 are provided, and are provided so as to be electrically connected to the connection terminals 712 of the battery. An anisotropic conductive film etc. can be used for bonding.

  In addition, the signal processing circuit 103 or the rectifier circuit group 107 and a chip 702 on which a charging circuit is formed are attached to a substrate 701 over which the first antenna circuit 704, the antenna circuit 705a, the antenna circuit 705b, and the battery 703 are provided. It may be provided (FIG. 12A). In addition, a chip 702 on which a signal processing circuit or a rectifier circuit group and a charging circuit are formed and a battery 703 are attached to a substrate 701 provided with the first antenna circuit 704, the antenna circuit 705a, and the antenna circuit 705b. It may be provided (FIG. 12B). In this case, the signal processing circuit, each of the rectifier circuit groups, the charging circuit, and the battery 703 included in the chip 702 are electrically connected to each other, and the signal processing circuit, the first antenna circuit 704, each of the rectifying circuit groups, and the charging are connected. The circuit is bonded to the antenna circuit 705a and the antenna circuit 705b so as to be electrically connected. For bonding, as described above, connection terminals such as bumps that are electrically connected to the chip 702, the battery 703, or the first antenna circuit 704, the antenna circuit 705a, and the antenna circuit 705b are provided, and the connection terminals are electrically connected. Connected to and provided.

  The structure shown in FIG. 11 or 12 can also be applied to the structure shown in FIG.

  As described above, the semiconductor device of the present invention has a battery. Therefore, it is possible to prevent a shortage of power required for transmission / reception of individual information due to deterioration of the battery over time.

  The semiconductor device of the present invention has a plurality of antennas for supplying power to the battery wirelessly. Therefore, charging of the battery for supplying power for driving the semiconductor device can be performed by electromagnetic waves from the outside without being directly connected to the charger. As a result, unlike the conventional active type RFID tag, it is not necessary to check the remaining capacity of the battery or replace the battery, and it can be used for a long period of time. In addition, by always holding the power for driving the semiconductor device in the battery, sufficient power for operating the semiconductor device can be obtained, and the communication distance with the reader / writer can be extended.

  Furthermore, since one rectifier circuit corresponding to one antenna is provided, impedance matching corresponding to each antenna can be easily achieved. Further, since the return loss is reduced, the battery can be charged efficiently.

  Note that although a battery is described as an example of a power storage unit in this embodiment, a semiconductor device can be configured using a capacitor instead. Although various types of capacitors can be used, it is preferable to use a small and large electric double layer capacitor or a multilayer ceramic capacitor. Moreover, you may provide both a battery and a capacitor | condenser as an electrical storage part.

  Note that although only half-wave rectification is described in the present embodiment, full-wave rectification may be performed.

Note that this embodiment can be implemented in combination with any of the other embodiments in this specification.
(Embodiment 2)

  A structure of a mobile electronic device including the power receiving device of the present invention will be described with reference to block diagrams shown in FIGS. The power receiving device described in this embodiment is also called an RF battery or a wireless battery.

  A mobile electronic device 2700 illustrated in FIG. 13 includes a power receiving device portion 2701 and a power load portion 2705. The power receiving device portion 2701 includes an antenna circuit group 2702 including a plurality of antenna circuits, a signal processing circuit 2703, and a battery 2704. The signal processing circuit 2703 includes a rectifier circuit group 2707 including a plurality of rectifier circuits, a power supply circuit 2708, and a charging circuit 2716.

  Note that the power supply circuit 2708 in FIG. 13 supplies power to the power load unit 2705, but the configuration of the power load unit 2705 is different for each mobile electronic device. Therefore, in the present embodiment, description will be made assuming a configuration in a mobile phone or a digital video camera. Therefore, the power load portion 2705 includes a display portion 2709 and an integrated circuit portion 2710. Here, the integrated circuit portion 2710 is a circuit portion that processes signals other than the display portion, and has a different configuration for each mobile electronic device, and thus detailed description thereof is omitted in this specification. The integrated circuit portion 2710 may be designed according to the function of the mobile electronic device 2700. The display portion 2709 includes a pixel portion 2711 and a display control portion 2712 for controlling the pixel portion 2711. Needless to say, as a display element provided in a pixel in the display portion 2709, an electroluminescence element, a liquid crystal element, or the like is selected depending on the use of the mobile electronic device regardless of the type.

  FIG. 14 illustrates a block diagram in which the antenna circuit group 2702 receives a signal from the power feeder 2800. In FIG. 14, power received by each antenna of the antenna circuit group 2702 is input to the battery 2704 through each of the rectifier circuit groups 2707, and power is supplied from the battery 2704 to the power supply circuit 2708.

  Note that there is no particular limitation on the shape of the antenna in the antenna circuit group 2702. For example, as shown in FIG. 6A, a structure in which an antenna circuit on one surface is arranged around a signal processing circuit can be employed. Further, as shown in FIG. 6B, a structure may be adopted in which a thin antenna circuit is arranged around the signal processing circuit. Further, as shown in FIG. 6C, an antenna circuit having a shape for receiving high-frequency electromagnetic waves may be used for the signal processing circuit. Further, as shown in FIG. 6D, an antenna circuit having a shape that is 180 degrees omnidirectional (same reception is possible from any direction) with respect to the signal processing circuit may be used. Further, as shown in FIG. 6E, an antenna circuit having a shape that is long and bent in a rod shape with respect to the signal processing circuit may be used. Further, although not shown, a patch antenna may be used. Further, the connection of the antenna in the signal processing circuit and the antenna circuit is not particularly limited to the illustrated configuration. For example, the antenna circuit and the signal processing circuit may be arranged apart from each other and connected by wiring, or may be connected in proximity. The length required for the antenna differs depending on the frequency of the electromagnetic wave used for power reception. In this embodiment, the shape of the antenna circuit will be described assuming that the shape shown in FIG. 6B is adopted, the electromagnetic wave is received, and electric power is obtained by electromagnetic induction of the received electromagnetic wave. In addition, the Nth antenna circuit 2702n in the antenna circuit group 2702 is configured by an antenna 401 and a resonant capacitor 402 as shown in FIG. 5A, and the antenna 401 and the resonant capacitor 402 are collectively referred to as an antenna circuit 403. I will decide. In other words, the Nth antenna circuit 2702n corresponds to the antenna circuit 403 in FIG.

  The rectifier circuit group 2707 may be any circuit that converts an AC signal induced by the electromagnetic wave received by the antenna circuit group 2702 into a DC signal. For example, as shown in FIG. 5B, a rectifier circuit 407 may be configured by a diode 404, a diode 405, and a smoothing capacitor 406.

  The power feeder 2800 in FIG. 14 will be described with reference to FIG. A power feeder 2800 in FIG. 15 includes a power transmission control unit 601 and an antenna circuit 602. The power transmission control unit 601 modulates an electric signal for power transmission transmitted to the power receiving device unit 2701 in the mobile electronic device, and outputs an electromagnetic wave for power transmission from the antenna circuit 602.

  In this embodiment, the antenna circuit 602 of the power feeder 2800 illustrated in FIG. 15 is connected to the power transmission control unit 601, similarly to the antenna circuit group 2702 in the power receiving device unit 2701, and includes an antenna 603 and an LC parallel resonant circuit. A resonance capacitor 604 is provided. The power transmission control unit 601 supplies an induction current to the antenna circuit 602 during power transmission, and outputs an electromagnetic wave for power transmission from the antenna 603 to the power receiving device unit 2701.

  Note that, as described above, in this embodiment, the radio signal received by the antenna circuit group 2702 is based on the electromagnetic induction method in accordance with the shape of the antenna. Therefore, the power receiving device portion 2701 in FIGS. 13 and 14 includes an Nth antenna circuit 2702n having a coil shape. As an example, FIG. 16 illustrates a positional relationship of antenna circuits and a shape of an antenna in a mobile electronic device having a power receiving device portion. In FIG. 16, the antenna circuit in the power receiving device portion has a configuration for receiving electromagnetic waves for power transmission from the antenna of the power feeder.

  In FIG. 16, when the coiled antenna 3305 included in the power supply antenna circuit 3304 connected to the power transmission control unit 3303 and the antenna circuit 3302 of the power receiving device unit 3300 are brought close to each other, an alternating magnetic field is generated from the coiled antenna 3305. Occur. An AC magnetic field penetrates the coiled antenna circuit 3302 in the power receiving device unit 3300, and an electromotive force is generated between terminals of the coiled antenna circuit 3302 in the power receiving device unit 3300 (between one end and the other end of the antenna) by electromagnetic induction. Occur. With this electromotive force, the battery included in the power receiving device portion 3300 can be charged. Note that as illustrated in FIG. 17, the antenna circuit 3302 in the power receiving device portion 3300 performs charging from the power feeder regardless of whether the antenna circuit 3302 exists in a superimposed manner or a plurality of antenna circuits exist in the AC magnetic field. be able to.

  The frequency of the signal transmitted from the power feeder 2800 to the Nth antenna circuit 2702n is, for example, 300 GHz to 3 THz as a submillimeter wave, 30 GHz to 300 GHz as a millimeter wave, 3 GHz to 30 GHz as a microwave, or an ultra high frequency wave. Any of 300 MHz to 3 GHz, 30 MHz to 300 MHz which is an ultra short wave, 3 MHz to 30 MHz which is a short wave, 300 kHz to 3 kHz which is a medium wave, 30 kHz to 300 kHz which is a long wave, and 3 kHz to 30 kHz which is an ultra long wave can be used.

  A power supply circuit 2708 in FIGS. 13 and 14 corresponds to the power supply circuit 106 in FIGS. 1 and 2.

  Next, an operation of charging the mobile electronic device 2700 illustrated in FIGS. 13 and 14 with power from the power feeder 2800 with a non-electric signal will be described below. The radio signal received by each of the antenna circuit groups is half-wave rectified and smoothed by each of the rectifier circuit groups 2707. The voltage that has been half-wave rectified and smoothed by each of the rectifier circuit groups 2707 is temporarily held in the battery 2704. The power held in the battery 2704 is used as power supplied to the power supply circuit 2708.

  Note that in this embodiment, the power stored in the battery may be supplemented not only by a wireless signal output from the power feeder 2800 but also by separately providing a power generation element in part of the mobile electronic device. FIG. 18 shows a configuration provided with a power generation element. The configuration of FIG. 18 differs from the configuration of FIG. 13 in that a power generation element 851 for supplying power to the battery is provided. Providing the power generation element 851 is preferable because the supply amount of power stored in the battery 2704 can be increased and the charging speed can be increased.

  Note that the power generation element 851 in FIG. 18 may be, for example, a power generation element using a solar cell, a power generation element using a piezoelectric element, or a micro structure (MEMS: Micro Electro Mechanical System). ) May be used. Of course, instead of the power generation element, power from a large power generation device generated by power generation may be supplied to a combustion engine such as an automobile engine. Note that the power generation element 851 in FIG. 18 is not limited to the above-described configuration.

  Next, power supplied from the battery 2704 to the power supply circuit 2708 is supplied to the pixel portion 2711 of the display portion 2709, the display control portion 2712, and the integrated circuit portion 2710 in the power supply load portion 2705 in the configuration shown in FIGS. Is done. In this manner, the mobile electronic device 2700 can be operated.

  As described above, the power receiving device of the present invention includes the antenna circuit. Therefore, there is no need to provide an external terminal as a conductive part to the battery in the mobile electronic device, and power can be supplied to the battery by a wireless signal without causing damage to the external terminal or failure due to the failure of the external terminal. it can. In addition, if the wireless reception condition is good because the power supply means for supplying power to the mobile electronic device having a battery as a power receiving device wirelessly supplies, the charger or the primary battery for charging It becomes possible to always charge without carrying.

  The power receiving device of the present invention is provided with a plurality of antennas having different frequency bands to be received. These are connected to the battery and can be charged. Thereby, electromagnetic waves of various frequency bands can be used as electric power, and charging can be performed by efficiently using radio waves.

  Furthermore, by having one rectifier circuit corresponding to one antenna, it becomes easy to achieve impedance matching corresponding to each antenna. Further, since the return loss is reduced, the battery can be charged efficiently.

  In the present embodiment, the battery is illustrated as an example of the power storage unit, but a capacitor may be used as the power storage unit instead. Although various types of capacitors can be used, it is preferable to use a small and large electric double layer capacitor or a multilayer ceramic capacitor. Moreover, you may provide both a battery and a capacitor | condenser as an electrical storage part.

  Note that although only half-wave rectification is described in the present embodiment, full-wave rectification may be performed.

  Note that this embodiment can be implemented in combination with any of the other embodiments in this specification.

(Embodiment 3)
In this embodiment, an example of a method for manufacturing the semiconductor devices described in Embodiments 1 and 2 will be described.

  First, as shown in FIG. 19A, a separation layer 1903 is formed on one surface of a substrate 1901 with an insulating film 1902 interposed therebetween, and then an insulating film 1904 and a semiconductor film 1905 (for example, an amorphous film) functioning as a base film. And a film containing high-quality silicon). Note that the insulating film 1902, the separation layer 1903, the insulating film 1904, and the semiconductor film 1905 can be formed successively.

  Note that the substrate 1901 may be selected from a glass substrate, a quartz substrate, a metal substrate (eg, a stainless steel substrate), a semiconductor substrate such as a ceramic substrate, and a silicon substrate. In addition, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic, or the like can be used as the plastic substrate. Note that in this step, the separation layer 1903 is provided over the entire surface of the substrate 1901 with the insulating film 1902 interposed therebetween. However, a photolithography method is applied after providing a separation layer over the entire surface of the substrate 1901 as needed. It may be provided selectively.

  The insulating film 1902 and the insulating film 1904 are formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x> y> 0), silicon nitride oxide (SiNxOy) (x>) by a CVD method, a sputtering method, or the like. It is formed using an insulating material such as y> 0). For example, when the insulating film 1902 and the insulating film 1904 have a two-layer structure, a silicon nitride oxide film is formed as the first insulating film and a silicon oxynitride film is formed as the second insulating film. Good. Alternatively, a silicon nitride film may be formed as the first insulating film, and a silicon oxide film may be formed as the second insulating film. The insulating film 1902 functions as a blocking layer that prevents an impurity element from entering the separation layer 1903 or an element formed thereon from the substrate 1901. The insulating film 1904 functions as a blocking layer which prevents an impurity element from entering the element formed over the substrate 1901 and the separation layer 1903. In this manner, by forming the insulating film 1902 and the insulating film 1904 functioning as a blocking layer, an alkali metal or alkaline earth metal such as sodium (Na) that can enter from the substrate 1901 or an impurity contained in the separation layer 1903 An element or a substance forming the separation layer 1903 can be prevented from adversely affecting an element formed thereon. Note that the insulating film 1902 is not necessarily formed when quartz is used for the substrate 1901. If there is no possibility that an impurity element or the like enters the element from the separation layer 1903, the insulating film 1904 is not necessarily formed.

For the separation layer 1903, a metal film, a stacked structure of a metal film and a metal oxide film, or the like can be used. As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), A single layer or a stack of films made of an element selected from ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or an alloy material or compound material containing the element as a main component Form with. Moreover, these materials can be formed using a sputtering method, various CVD methods (for example, plasma CVD method), etc. As a laminated structure of a metal film and a metal oxide film, the surface of the metal film is formed by plasma treatment in an oxygen atmosphere or N ₂ O atmosphere, or heat treatment in an oxygen atmosphere or N ₂ O atmosphere after the above-described metal film is formed. The metal film can be provided with an oxide or an oxynitride of the metal film. For example, in the case where a tungsten film is provided as a metal film by a sputtering method, a CVD method, or the like, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film. In forming the tungsten oxide, there is no particular limitation on the value of X mentioned above, and it is preferable to determine which oxide is formed based on the etching rate or the like. In addition, for example, after forming a metal film (for example, tungsten), an insulating film such as silicon oxide (SiO ₂ ) is provided on the metal film by a sputtering method, and a metal oxide (for example, for example, Tungsten oxide) may be formed over tungsten. Further, as the plasma processing, for example, high-density plasma processing may be performed. In addition to the metal oxide film, metal nitride or metal oxynitride may be used. In this case, plasma treatment or heat treatment may be performed on the metal film in a nitrogen atmosphere or a mixed gas atmosphere of nitrogen and oxygen.

  The semiconductor film 1905 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by a sputtering method, an LPCVD method, or a plasma CVD method.

  Next, as shown in FIG. 19B, the semiconductor film 1905 is irradiated with laser light to be crystallized. Note that a combination of laser light irradiation, a thermal crystallization method using a rapid thermal annealing (RTA) or furnace annealing furnace, and a thermal crystallization method using a metal element that promotes crystallization is used to form the semiconductor film 1905. Crystallization may be performed. After that, the obtained crystalline semiconductor film is etched into a desired shape, crystallized crystalline semiconductor films 1905a to 1905f are formed, and a gate insulating film 1906 is formed so as to cover the semiconductor films 1905a to 1905f.

  Note that the gate insulating film 1906 is formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x> y> 0), or silicon nitride oxide (SiNxOy) (x> y> 0) by a CVD method, a sputtering method, or the like. ) Or the like. For example, in the case where the gate insulating film 1906 has a two-layer structure, a silicon oxynitride film may be formed as the first insulating film and a silicon nitride oxide film may be formed as the second insulating film. Alternatively, a silicon oxide film may be formed as the first insulating film, and a silicon nitride film may be formed as the second insulating film. Here, the first-layer insulating film is formed on the second-layer insulating film.

  As an example of a manufacturing process of the crystalline semiconductor films 1905a to 1905f, the case where a metal element that promotes crystallization is used is briefly described below. First, an amorphous semiconductor film with a thickness of 50 to 60 nm is formed using a plasma CVD method. Next, after a solution containing nickel (Ni) which is a metal element for promoting crystallization is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour). And a thermal crystallization treatment (550 ° C., 4 hours) to form a crystalline semiconductor film. After that, laser light is irradiated, and crystalline semiconductor films 1905a to 1905f are formed by using a photolithography method. Note that the amorphous semiconductor film may be crystallized only by laser light irradiation without using a metal element that promotes crystallization.

As a laser oscillator used for crystallization, a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. The laser beam that can be used here is a gas laser such as Ar laser, Kr laser, or excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline ( Ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ are added with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as dopants. A laser oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser, and gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. In this case, a laser power density is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec. Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta, or a laser, Ar ion laser, or Ti: sapphire laser with one or more added as a medium should be continuously oscillated. It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When a laser beam is oscillated at an oscillation frequency of 10 MHz or higher, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

Alternatively, the gate insulating film 1906 may be formed by performing the above-described high-density plasma treatment on the semiconductor films 1905a to 1905f and oxidizing or nitriding the surface. For example, it is formed by plasma treatment in which a rare gas such as He, Ar, Kr, or Xe and a mixed gas such as oxygen, nitrogen oxide (NO ₂ ), ammonia, nitrogen, or hydrogen are introduced. When excitation of plasma in this case is performed by introducing microwaves, high-density plasma can be generated at a low electron temperature. The surface of the semiconductor film can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by this high-density plasma.

  By such treatment using high-density plasma, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the semiconductor film. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the semiconductor film can be extremely low. Such high-density plasma treatment directly oxidizes (or nitrides) a semiconductor film (crystalline silicon or polycrystalline silicon), so that the thickness of the formed insulating film ideally has extremely small variation. can do. In addition, since it is not strongly oxidized even at the crystal grain boundary of crystalline silicon, it becomes a very preferable state. That is, the surface of the semiconductor film is solid-phase oxidized by the high-density plasma treatment shown here, thereby forming an insulating film with good uniformity and low interface state density without causing an abnormal oxidation reaction at the grain boundaries. can do.

  Note that as the gate insulating film 1906, only an insulating film formed by high-density plasma treatment may be used, or silicon oxide, silicon oxynitride, silicon nitride oxide, or silicon nitride formed by a CVD method using plasma or thermal reaction. Alternatively, an insulating film such as the above may be deposited. A single layer or a stacked layer may be used. In any case, a transistor formed so as to include an insulating film formed by high-density plasma in part or all of the gate insulating film has less variation in characteristics.

  The semiconductor films 1905a to 1905f obtained by scanning in one direction while irradiating the semiconductor film with a continuous wave laser or a laser beam oscillating at a frequency of 10 MHz or higher are crystallized in the scanning direction of the beam. There is a characteristic that crystals grow. Transistors are arranged with the scanning direction aligned with the channel length direction (the direction in which carriers flow in the channel formation region), and the above gate insulating film is combined, so that thin film transistors with small variations in characteristics and high field effect mobility ( A TFT (Thin Film Transistor) can be obtained.

  Next, a conductive film is stacked over the gate insulating film 1906. Here, the first conductive film is formed with a thickness of 20 to 100 nm by a CVD method, a sputtering method, or the like. The second conductive film is formed with a thickness of 100 to 400 nm. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus (P) is used. Examples of the combination of the first conductive film and the second conductive film include a tantalum nitride film and a tungsten film, a tungsten nitride film and a tungsten film, a molybdenum nitride film and a molybdenum film, and the like. Tungsten and tantalum nitride have high heat resistance. Therefore, by using these, heat treatment for the purpose of thermal activation can be performed after the first conductive film and the second conductive film are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure in which an aluminum film is sandwiched between molybdenum films may be employed.

  Next, a resist mask is formed by photolithography, and an etching process for forming gate electrodes and gate lines is performed, so that gate electrodes 1907 are formed over the semiconductor films 1905a to 1905f. Here, an example in which the conductive film 1907a and the conductive film 1907b are stacked as the gate electrode 1907 is shown.

Next, as illustrated in FIG. 19C, an impurity element imparting n-type conductivity is applied to the semiconductor films 1905a, 1905b, 1905d, and 1905f at a low concentration by ion doping or ion implantation using the gate electrode 1907 as a mask. After that, a resist mask is selectively formed by photolithography, and an impurity element imparting p-type conductivity is added to the semiconductor films 1905c and 1905e at a high concentration. As the impurity element imparting n-type conductivity, phosphorus (P), arsenic (As), or the like can be used. As the impurity element imparting p-type conductivity, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, phosphorus (P) is used as an impurity element imparting n-type conductivity, and the semiconductor films 1905a, 1905b, 1905d, and 1905f are selectively used so as to be included at a concentration of 1 × 10 ¹⁵ to 1 × 10 ¹⁹ / cm ^3. Then, an impurity region 1908 showing n-type is formed. Further, boron (B) is used as an impurity element imparting p-type conductivity, and is selectively introduced into the semiconductor film 1905c and the semiconductor film 1905e so as to be included at a concentration of 1 × 10 ¹⁹ to 1 × 10 ²⁰ / cm ³ . A p-type impurity region 1909 is formed.

  Subsequently, an insulating film is formed so as to cover the gate insulating film 1906 and the gate electrode 1907. As the insulating film, a single layer or a stacked layer of a film containing an inorganic material such as silicon, silicon oxide, or silicon nitride, or a film containing an organic material such as an organic resin, by a plasma CVD method or a sputtering method. Form. Next, this insulating film is selectively etched by anisotropic etching mainly in the vertical direction to form an insulating film 1910 (also referred to as a sidewall) in contact with the side surface of the gate electrode 1907. The insulating film 1910 is used as a mask for doping when an LDD (Lightly Doped Drain) region is formed.

Next, an impurity imparting n-type conductivity to the semiconductor film 1905a, the semiconductor film 1905b, the semiconductor film 1905d, and the semiconductor film 1905f, using a resist mask formed by a photolithography method, the gate electrode 1907, and the insulating film 1910 as a mask. An impurity region 1911 showing n-type is formed by adding an element at a high concentration. Here, phosphorus (P) is used as the impurity element imparting n-type conductivity, and the semiconductor film 1905a, the semiconductor film 1905b, the semiconductor film 1905d, and the semiconductor are included at a concentration of 1 × 10 ¹⁹ to 1 × 10 ²⁰ / cm ^3. An impurity region 1911 containing an impurity element imparting n-type conductivity at a higher concentration than the impurity region 1908 is selectively introduced into the film 1905f.

  Through the above steps, as illustrated in FIG. 19D, an n-channel thin film transistor 1900a, an n-channel thin film transistor 1900b, an n-channel thin film transistor 1900d, an n-channel thin film transistor 1900f, a p-channel thin film transistor 1900c, and a p-channel thin film transistor. 1900e are formed.

  Note that in the n-channel thin film transistor 1900a, a channel formation region is formed in a region of the semiconductor film 1905a overlapping with the gate electrode 1907, and an impurity region 1911 serving as a source region or a drain region is not overlapped with the gate electrode 1907 and the insulating film 1910. A low-concentration impurity region (LDD region) is formed between the channel formation region and the impurity region 1911 which is formed and overlaps with the insulating film 1910. Similarly, a channel formation region, a low concentration impurity region, and an impurity region 1911 are formed in the n-channel thin film transistor 1900b, the n-channel thin film transistor 1900d, and the n-channel thin film transistor 1900f.

  In the p-channel thin film transistor 1900c, a channel formation region is formed in a region of the semiconductor film 1905c overlapping with the gate electrode 1907, and an impurity region 1909 forming a source region or a drain region is formed in a region not overlapping with the gate electrode 1907. Yes. Similarly, a channel formation region and an impurity region 1909 are also formed in the p-channel thin film transistor 1900e. Note that here, the p-channel thin film transistors 1900c and 1900e are not provided with an LDD region, but the p-channel thin film transistor may be provided with an LDD region, or the n-channel thin film transistor may not be provided with an LDD region. Good.

  Next, as illustrated in FIG. 20A, an insulating film is formed as a single layer or a stacked layer so as to cover the semiconductor films 1905a to 1905f, the gate electrode 1907, and the like. An impurity region 1909 to be a drain region and a conductive film 1913 which is electrically connected to the impurity region 1911 are formed. The insulating film is made of an inorganic material such as silicon oxide or nitride, organic material such as polyimide, polyamide, benzocyclobutene, acrylic, epoxy, etc. by CVD, sputtering, SOG, droplet discharge or screen printing. A single layer or a stacked layer is formed using a material or a siloxane material. Here, the insulating film is formed of two layers, the first insulating film 1912a is formed using a silicon nitride oxide film, and the second insulating film 1912b is formed using a silicon oxynitride film. The conductive film 1913 forms source and drain electrodes of the semiconductor films 1905a to 1905f.

  Note that before the insulating film 1912a and the insulating film 1912b are formed, or after any one or a plurality of thin films of the insulating film 1912a and the insulating film 1912b is formed, the crystallinity of the semiconductor film is restored or added to the semiconductor film. Heat treatment for the purpose of activating the impurity element and hydrogenating the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

  The conductive film 1913 is formed of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), CVD, sputtering, or the like. An element selected from copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or an alloy containing these elements as a main component A material or a compound material is formed as a single layer or stacked layers. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The conductive film 1913 includes, for example, a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, and a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride (titanium nitride) film, and a barrier film. Should be adopted. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive film 1913 because they have low resistance and are inexpensive. In addition, when barrier layers are provided in the upper layer and the lower layer, generation of hillocks of aluminum or aluminum silicon can be prevented. Moreover, even when a thin natural oxide film is formed on the crystalline semiconductor film by forming a barrier film made of titanium, which is a highly reducing element, the natural oxide film is reduced, and the crystalline semiconductor film Good contact can be made.

  Next, an insulating film 1914 is formed so as to cover the conductive film 1913, and electrically connected to the conductive film 1913 which forms the source electrode or the drain electrode of the semiconductor film 1905a and the semiconductor film 1905f on the insulating film 1914, respectively. A conductive film 1915a and a conductive film 1915b are formed. Further, a conductive film 1916a and a conductive film 1916b which are electrically connected to the conductive film 1913 which forms the source electrode or the drain electrode of the semiconductor film 1905b and the semiconductor film 1905e, respectively, are formed. Note that the conductive films 1915a and 1915b, and the conductive films 1916a and 1916b may be formed using the same material at the same time. The conductive film 1915a, the conductive film 1915b, the conductive film 1916a, and the conductive film 1916b can be formed using any of the materials described for the conductive film 1913.

  Next, as illustrated in FIG. 20B, the conductive films 1917a and 1917b functioning as antennas are electrically connected to the conductive films 1916a and 1916b. Here, one of the conductive film 1917a and the conductive film 1917b functioning as an antenna corresponds to the antenna of the first antenna circuit described in the above embodiment mode, and the other corresponds to the second antenna circuit, the Nth antenna circuit, or the like. Corresponds to an antenna. For example, when the conductive film 1917a is an antenna of a first antenna circuit and the conductive film 1917b is an antenna of a second antenna circuit, an n-channel thin film transistor 1900a, an n-channel thin film transistor 1900b, and a p-channel thin film transistor 1900c The thin film transistors 1900d to 1900f function as elements included in the second signal processing circuit described in the above embodiment, and function as elements included in the first signal processing circuit described in the above embodiment.

  Note that the insulating film 1914 is formed by silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y) by a CVD method, a sputtering method, or the like. An insulating film having oxygen or nitrogen such as a film, a film containing carbon such as DLC (diamond-like carbon), an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or a siloxane material such as a siloxane resin The film can be formed as a single layer or stacked layers. Note that the siloxane material corresponds to a material including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used.

  The conductive films 1917a and 1917b are formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo), or an alloy material or a compound material containing these elements as a main component, is formed in a single layer or stacked layers.

  For example, in the case of forming the conductive film 1917a and the conductive film 1917b functioning as an antenna using a screen printing method, a paste in which conductive particles having a particle size of several nanometers to several tens of micrometers are dissolved or dispersed in an organic resin is used. It can be provided by selective printing. The conductive particles include silver (Ag), gold (Au), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo) and titanium (Ti). Any one or more metal particles, silver halide fine particles, or dispersible nanoparticles can be used. In addition, as the organic resin contained in the conductive paste, one or more selected from organic resins that function as a binder of metal particles, a solvent, a dispersant, and a coating material can be used. Typically, an organic resin such as an epoxy resin or a silicon resin can be given. In forming the conductive film, it is preferable to fire after extruding the paste. For example, in the case where fine particles containing silver as a main component (for example, a particle size of 1 nm to 100 nm) is used as a paste containing conductive particles, the paste is cured by baking in a temperature range of 150 to 300 ° C. A membrane can be obtained. Further, fine particles mainly composed of solder or lead-free solder may be used. In this case, it is preferable to use fine particles having a particle diameter of 20 μm or less. Solder and lead-free solder have the advantage of low cost.

  The conductive films 1915a and 1915b can function as wirings that are electrically connected to the battery included in the semiconductor device of this embodiment in a later step. In addition, when the conductive film 1917a and the conductive film 1917b functioning as an antenna are formed, another conductive film is formed so as to be electrically connected to the conductive film 1915a and the conductive film 1915b, and the conductive film is connected to the battery. It may be used as

Next, as illustrated in FIG. 20C, after an insulating film 1918 is formed so as to cover the conductive films 1917 a and 1917 b, layers including thin film transistors 1900 a to 1900 f, conductive films 1917 a, and conductive films 1917 b (hereinafter, referred to as the conductive films 1917 a and 1917 b). , Described as “element formation layer 1919”) from the substrate 1901. Here, an opening is formed in a region avoiding the thin film transistors 1900a to 1900f by irradiation with laser light (for example, UV light), and the element formation layer 1919 is peeled from the substrate 1901 using physical force. it can. Further, before the element formation layer 1919 is peeled from the substrate 1901, an etching agent may be introduced into the formed opening to selectively remove the peeling layer 1903. As the etchant, a gas or liquid containing halogen fluoride or an interhalogen compound is used. For example, chlorine trifluoride (ClF ₃ ) is used as a gas containing halogen fluoride. Then, the element formation layer 1919 is peeled from the substrate 1901. Note that a part of the peeling layer 1903 may be left without being removed. By doing so, the consumption of the etching agent can be suppressed and the processing time required for removing the release layer can be shortened. In addition, the element formation layer 1919 can be held over the substrate 1901 even after the peeling layer 1903 is removed. In addition, cost can be reduced by reusing the substrate 1901 from which the element formation layer 1919 is peeled.

  The insulating film 1918 is formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like by CVD or sputtering. A layer made of an insulating film containing oxygen or nitrogen, a film containing carbon such as DLC (Diamond Like Carbon), an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or a siloxane material such as siloxane resin A single layer or a stacked layer can be formed.

  In this embodiment mode, as illustrated in FIG. 21A, after an opening is formed in the element formation layer 1919 by irradiation with laser light, one surface of the element formation layer 1919 (an exposed surface of the insulating film 1918) is formed. ), The element formation layer 1919 is peeled off from the substrate 1901.

  Next, as illustrated in FIG. 21B, after the second sheet material 1921 is attached to the other surface (the surface exposed by peeling) of the element formation layer 1919, one of heat treatment and pressure treatment is performed. Or both are performed and the 2nd sheet | seat material 1921 is bonded together. As the first sheet material 1920 and the second sheet material 1921, a hot melt film or the like can be used.

  Further, as the first sheet material 1920 and the second sheet material 1921, films (hereinafter referred to as an antistatic film) on which an antistatic measure for preventing static electricity or the like is applied can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin and a film on which an antistatic material is attached. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached so that the surface provided with the antistatic material is on the inside of the film or on the outside of the film. May be. Note that the antistatic material may be provided on the entire surface or a part of the film. The antistatic material here is a surfactant such as metal, oxide of indium and tin (ITO: Indium Tin Oxide), amphoteric surfactant, cationic surfactant or nonionic surfactant. Etc. can be used. In addition, as an antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By sealing with an antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when handled as a product.

  Note that the battery is formed so as to be connected to the conductive films 1915a and 1915b; however, the connection with the battery is performed before the element formation layer 1919 is peeled from the substrate 1901 (the stage in FIG. 20B or FIG. 20C). ), Or after the element formation layer 1919 is peeled from the substrate 1901 (step of FIG. 21A), or the element formation layer 1919 may be the first sheet material and the second sheet. You may perform after sealing with a material (stage of FIG. 21 (B)). An example of a method for forming the element formation layer 1919 and the battery by connecting them will be described below with reference to FIGS.

  20B, a conductive film 1931a and a conductive film 1931b which are electrically connected to the conductive film 1915a and the conductive film 1915b are formed at the same time as the conductive films 1917a and 1917b which function as antennas. Subsequently, after an insulating film 1918 is formed so as to cover the conductive films 1917a, 1917b, 1931a, and 1931b, an opening 1932a and an opening are formed so that the surfaces of the conductive films 1931a and 1931b are exposed. 1932b is formed. After that, as shown in FIG. 22A, an opening is formed in the element formation layer 1919 by laser light irradiation, and the first surface of the element formation layer 1919 (the surface where the insulating film 1918 is exposed) is exposed to the first portion. After the sheet material 1920 is attached, the element formation layer 1919 is peeled from the substrate 1901.

  Next, as illustrated in FIG. 22B, the second sheet material 1921 is attached to the other surface (the surface exposed by peeling) of the element formation layer 1919, and then the element formation layer 1919 is attached to the first surface. The sheet material 1920 is peeled off. Therefore, here, the first sheet material 1920 having a weak adhesive force is used. Subsequently, conductive films 1934a and 1934b that are electrically connected to the conductive films 1931a and 1931b through the openings 1932a and 1932b are selectively formed, respectively.

  The conductive films 1934a and 1934b are formed using a conductive material by a CVD method, a sputtering method, a printing method such as screen printing or gravure printing, a droplet discharge method, a dispenser method, a plating method, or the like. Conductive materials are aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), platinum (Pt) nickel (Ni), palladium (Pd), tantalum (Ta), molybdenum An element selected from (Mo), or an alloy material or a compound material containing these elements as a main component, is formed as a single layer or stacked layers.

  Note that although the example in which the conductive film 1934a and the conductive film 1934b are formed after the element formation layer 1919 is peeled from the substrate 1901 is shown here, the element formation layer 1919 is formed from the substrate 1901 after the conductive films 1934a and 1934b are formed. It may be peeled off.

  Next, as illustrated in FIG. 23A, in the case where a plurality of elements are formed over the substrate, the element formation layer 1919 is divided into elements. In order to divide each element, a laser irradiation device, a dicing device, a scribe device, or the like can be used. Here, a plurality of elements formed on one substrate are divided by irradiation with laser light.

  Next, as shown in FIG. 23B, the divided element is electrically connected to the connection terminal of the battery. Here, the conductive films 1934a and 1934b provided in the element formation layer 1919 are connected to the conductive film 1936a and the conductive film 1936b which are connection terminals of the battery provided over the substrate 1935, respectively. Here, the connection between the conductive film 1934a and the conductive film 1936a, or the connection between the conductive film 1934b and the conductive film 1936b is an anisotropic conductive film (ACF (Anisotropic Conductive Film)) or an anisotropic conductive paste (ACP (Anisotropic). (Conductive Paste)) and the like. Here, an example is shown in which conductive particles 1938 contained in an adhesive resin 1937 are used for connection. In addition, it is possible to perform connection using a conductive adhesive such as silver paste, copper paste, or carbon paste, solder bonding, or the like.

  When the battery is larger than the element, the number of elements that can be made on a single substrate can be increased by forming multiple elements on a single substrate and connecting the device after dividing the device. A semiconductor device can be manufactured at a lower cost. Note that although the case where a thin film transistor is formed has been described in this embodiment mode, a MOS (Metal Oxide Semiconductor) transistor may be used. An example in which a MOS transistor is formed is shown in FIG. The MOS transistor shown in FIG. 37 is formed using a semiconductor substrate. A single crystal silicon substrate is typically employed as the semiconductor substrate. Although the thickness of the semiconductor substrate is 100 to 300 μm, it may be polished to be thinned to 10 to 100 μm. Each transistor is isolated by an element isolation insulating layer. The element isolation insulating layer can be formed using a LOCOS (Local Oxidation of Silicon) technique in which a mask such as a nitride film is formed on a semiconductor substrate, and an oxide film for element isolation is formed by thermal oxidation. Alternatively, an isolation insulating layer may be formed by forming a trench in a semiconductor substrate using an STI (Shallow Trench Isolation) technique, embedding an insulating film therein, and further planarizing the trench. By using the STI technique, the side wall of the element isolation insulating layer can be made steep, and the element isolation width can be reduced. An n-well and a p-well are formed in a semiconductor substrate, and an n-channel transistor and a p-channel transistor can be formed as a so-called double well structure. Alternatively, a single well structure may be used. Note that FIG. 37 is obtained by replacing the thin film transistor of the semiconductor device illustrated in FIG. 23B with a MOS transistor, and thus detailed description of each layer is omitted.

  Through the above steps, a semiconductor device can be manufactured. Note that in this embodiment mode, a process of peeling after forming an element such as a thin film transistor over a substrate is shown; however, a product may be used as it is without peeling. In addition, after providing an element such as a thin film transistor over a glass substrate, the glass substrate is polished from the side opposite to the surface where the element is provided, or a MOS transistor is formed using a semiconductor substrate such as silicon. By subsequently polishing the semiconductor substrate, the semiconductor device can be made thinner and smaller.

  Note that this embodiment can be implemented in combination with any of the other embodiments in this specification.

(Embodiment 4)
In this embodiment, an example of a method for charging a semiconductor device of the present invention will be described.

  A semiconductor device 9300 according to the present embodiment shown in FIG. 24 has a configuration in which a charge / discharge control circuit 9301 is added to the semiconductor device 100 shown in FIG. The charge / discharge control circuit 9301 controls charging and discharging timing of the battery 104.

  For example, charging / discharging of the battery 104 may be performed simultaneously by the charging / discharging control circuit 9301. That is, regardless of whether or not the battery 104 is used as a power source of the signal processing circuit 103, the power output from the Nth rectifier circuit 107n can be supplied to the battery 104 and charged.

  In order to prevent the battery 104 from being overcharged, the charge / discharge control circuit 9301 preferably has a function of stopping charging of the battery 104 when the voltage of the battery 104 reaches a specified voltage.

  An example of a flowchart in this case is shown in FIG. The flowchart of FIG. 25 will be briefly described. First, a signal is received by the Nth antenna circuit 102n (STEP 9401). Then, the signal received by the Nth antenna circuit 102n is rectified by the Nth rectifier circuit 107n to obtain power (STEP 9402). The power output from the Nth rectifier circuit 107 n is supplied to the charge / discharge control circuit 9301 through the charging circuit 116. Then, the charge / discharge control circuit 9301 determines whether or not the voltage of the battery 104 is lower than a specified voltage (STEP 9403). When the voltage is smaller than the specified voltage, the charge / discharge control circuit 9301 supplies the battery 104 with the power output from the Nth rectifier circuit 107n for a certain period of time (STEP 9404). When the voltage is equal to or higher than the specified voltage (including the case where the voltage becomes higher than the specified voltage by repeating STEP 9403 and STEP 9404), the charge / discharge control circuit 9301 does not supply the battery 104 with the power output from the Nth rectifier circuit 107n ( (STEP 9405). The above operation is performed every time a signal is received by the Nth antenna circuit 102n.

  In addition, this invention is not limited to said structure. The charge / discharge control circuit 9301 has a function of allowing the battery 104 to be charged when the voltage of the battery 104 becomes lower than the specified voltage, and stopping the charging of the battery 104 when the voltage of the battery 104 reaches the specified voltage. You may have. An example of a flowchart in this case is shown in FIG.

  FIG. 26 will be briefly described. First, a signal is received by the Nth antenna circuit 102n (STEP 9501). Then, the signal received by the Nth antenna circuit 102n is rectified by the Nth rectifier circuit 107n to obtain power (STEP 9502). The power output from the Nth rectifier circuit 107 n is supplied to the charge / discharge control circuit 9301 through the charging circuit 116. Then, the charge / discharge control circuit 9301 determines whether or not the voltage of the battery 104 is smaller than the specified voltage V1 (STEP 9503). When the voltage is smaller than the specified voltage V1, the charge / discharge control circuit 9301 supplies the power output from the Nth rectifier circuit 107n to the battery 104, and the voltage V2 of the battery is defined (V2> V1). It charges until it becomes (STEP9504). When the voltage of the battery 104 is equal to or higher than the specified voltage V1 (including the case where the voltage of the battery 104 becomes equal to or higher than the voltage V2 according to STEP 9504), the charge / discharge control circuit 9301 outputs power output from the Nth rectifier circuit 107n. Is not supplied to the battery 104 (STEP 9505). The above operation is performed every time a signal is received by the Nth antenna circuit 102n.

  Alternatively, the battery 104 may be charged or discharged. That is, when a signal is not received by the first antenna circuit 101, the charge / discharge control circuit 9301 enables charging of the battery 104. When a signal is received by the first antenna circuit 101, the charge / discharge control circuit 9301 is received. Stops charging the battery 104 and allows the battery 104 to discharge. In this case, the charge / discharge control circuit 9301 is connected to the power supply circuit 106. An example of a flowchart in this case is shown in FIG.

  FIG. 27 will be briefly described. First, a signal is received by the Nth antenna circuit 102n (STEP 9601). Then, the signal received by the Nth antenna circuit 102n is rectified by the Nth rectifier circuit 107n to obtain power (STEP 9602). The power output from the Nth rectifier circuit 107 n is supplied to the charge / discharge control circuit 9301 through the charging circuit 116. When the first antenna circuit 101 receives a signal, for example, a signal for transmitting the information from the logic circuit 110 is input to the charge / discharge control circuit 9301 (STEP 9603). Then, the charge / discharge control circuit 9301 stops supplying power from the Nth rectifier circuit 107n to the battery 104 (STEP 9604). When the first antenna circuit 101 is not receiving a signal, the charge / discharge control circuit 9301 supplies the power output from the Nth rectifier circuit 107n to the battery 104 to charge the voltage of the battery 104 to a specified voltage ( (STEP 9605 and STEP 9606). When the voltage of the battery 104 becomes a specified voltage, the charge / discharge control circuit 9301 no longer supplies the power output from the Nth rectifier circuit 107n to the battery 104 (STEP 9604). The above operation is performed every time a signal is received by the Nth antenna circuit 102n.

  Alternatively, after the signal is received by the first antenna circuit 101, the signal is processed by the signal processing circuit 103, and the signal is transmitted from the first antenna circuit 101, the power consumption of the battery 104 can be charged to the battery 104. The charge / discharge control circuit 9301 may have such a function. An example of a flowchart in this case is shown in FIG.

  FIG. 28 will be briefly described. First, a signal is received by the first antenna circuit 101 (STEP 9701). Then, the signal received by the first antenna circuit 101 is processed by the signal processing circuit 103, and the signal is transmitted from the first antenna circuit 101 (STEP 9702). After that, the charge / discharge control circuit 9301 supplies the battery 104 with power obtained from the signal received by the Nth antenna circuit 102n via the charging circuit 116, and charges the battery voltage to a specified voltage (STEP 9703). . That is, every time a signal is transmitted by the first antenna circuit 101, the consumed power can be charged by charging the battery 104 to a specified voltage.

  Note that the charge / discharge control circuit 9301 may have not only a function of preventing overcharge but also a function of preventing overdischarge.

  Note that this embodiment can be implemented in combination with any of the other embodiments in this specification.

(Embodiment 5)
In this embodiment, a structure of a semiconductor device according to this embodiment in which a voltage output from a battery is boosted in synchronization with a signal received by an antenna circuit to generate a power supply voltage will be described.

  FIG. 29 is a block diagram showing a configuration example of the semiconductor device 9100 according to this embodiment.

  The semiconductor device 9100 shown in FIG. 29 boosts the voltage output from the battery in synchronization with the received signal. The boosted voltage is used as a power source for the level shifter circuit 9111 for increasing the amplitude of data written to the nonvolatile memory.

  A semiconductor device 9100 according to this embodiment includes an antenna circuit 9101, a signal processing circuit 9102, a battery 9114, a charging circuit 9115, and an antenna-rectifier circuit group 9116.

  The antenna-rectifier circuit group 9116 is a collection of a plurality of pairs of antennas and rectifier circuits. The antenna-rectifier circuit group 9116 is connected to the battery 9114 through the charging circuit 9115. The battery 9114 is charged through the charging circuit 9115 by radio waves received by the antennas included in the antenna-rectifier circuit group 9116.

  The antenna circuit 9101 and the antenna-rectifier circuit group 9116 can take various forms for the antenna. For example, what was demonstrated in Embodiment 1 shown in FIG. 6 can be used. In addition, a so-called dipole antenna, loop antenna, Yagi antenna, patch antenna, or minute antenna can be used. In the case where an antenna is also formed over a substrate over which a transistor included in the signal processing circuit 9102 is formed, the antenna shape is preferably a minute loop antenna, a minute dipole antenna, or the like.

  In addition, the antennas included in the antenna circuit 9101 and the antenna-rectifier circuit group 9116 may have means for changing the frequency of the received signal. For example, when the antenna shape is a loop antenna, a resonance circuit may be formed by an antenna coil constituting the antenna and a capacitor, and the frequency of the corresponding signal can be changed by making the capacitance of the capacitor variable. it can.

  As the battery 9114, a secondary battery such as a lithium ion battery, a lithium secondary battery, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead storage battery, an air secondary battery, a nickel zinc battery, or a silver zinc battery can be used. However, it is not limited to these. Further, a large capacity capacitor or the like may be used as the battery. In particular, since a lithium ion battery or a lithium secondary battery has a large charge / discharge capacity, it can be reduced in size by being applied to a battery provided in the semiconductor device according to this embodiment. Note that the battery 9114 may be formed over the same substrate on which the signal processing circuit 9102 is formed by forming an active material or an electrolyte of a lithium ion battery by a sputtering method, or the antenna circuit 9101 is formed. It may be formed on the same substrate as the other substrate. By forming the battery 9114 over the substrate over which the signal processing circuit 9102 and the antenna circuit 9101 are formed, the yield is improved. The lithium metal battery uses a lithium ion-containing transition metal oxide, metal oxide, metal sulfide, iron-based compound, conductive polymer or organic sulfur-based compound as the positive electrode active material, and lithium (alloy) as the negative electrode active material. By using an organic electrolytic solution, a polymer electrolyte, or the like as the electrolyte, the battery 9114 having a larger charge / discharge capacity can be obtained.

  The signal processing circuit 9102 includes a rectifier circuit 9103, a power supply circuit 9104, a demodulation circuit 9105, a logic circuit 9106, a memory control circuit 9107, a memory circuit 9108, a logic circuit 9109, a modulation circuit 9110, and a level shifter circuit 9111. A booster circuit 9112 and a switch 9113. For example, a nonvolatile memory can be used as the memory circuit 9108.

  The rectifier circuit 9103 rectifies and smoothes the AC signal received by the antenna circuit 9101. The voltage output from the rectifier circuit 9103 is supplied to the power supply circuit 9104. In the power supply circuit 9104, a desired voltage is generated. Then, a power supply voltage is supplied from the power supply circuit 9104 to various circuits of the signal processing circuit 9102.

  The signal processing of the semiconductor device according to the present embodiment is as follows. A communication signal received by the antenna circuit 9101 is input to the demodulation circuit 9105. Usually, a communication signal is sent by performing a process such as ASK modulation or PSK modulation on a carrier such as 13.56 MHz or 915 MHz.

  FIG. 29 shows an example in which a 13.56 MHz communication signal is used. A communication signal subjected to ASK modulation or PSK modulation is received by the antenna circuit 9101 and demodulated by the demodulation circuit 9105. The demodulated signal is sent to the logic circuit 9106 and analyzed. The signal analyzed by the logic circuit 9106 is sent to the memory control circuit 9107, and the memory control circuit 9107 controls the memory circuit 9108 based on the signal.

  When the signal sent to the memory control circuit 9107 includes a data read command from the memory circuit 9108, the memory control circuit 9107 takes out the data stored in the memory circuit 9108 and sends the data to the logic circuit 9109. send. The data sent to the logic circuit 9109 is encoded by the logic circuit 9109, and the modulation circuit 9110 modulates the carrier by the signal.

  Next, when the signal sent to the memory control circuit 9107 includes a data write command to the memory circuit 9108, the memory control circuit 9107 turns on the switch 9113. Then, a voltage is supplied from the battery 9114 to the booster circuit 9112, and the supplied voltage is boosted. The level shifter circuit 9111 shifts the level of the data written to the memory circuit 9108 input from the memory control circuit 9107 using the voltage boosted by the booster circuit 9112. Data that has been level-shifted and has increased amplitude is written to the memory circuit 9108.

  As described above, the semiconductor device 9100 according to this embodiment operates.

  In FIG. 29, the power supply circuit 9104 and the battery 9114 are not connected. Of course, the battery 9114 and the power supply circuit 9104 may be connected to drive the power supply circuit 9104 using the battery 9114.

  Note that although a 13.56 MHz communication signal has been described in this embodiment, the present invention is not limited to this. As the carrier frequency, for example, 125 KHz, UHF band frequency, 2.45 GHz, or the like can be used. Note that the present embodiment is not limited to the configuration shown in FIG.

  Note that this embodiment can be implemented in combination with any of the other embodiments in this specification.

(Embodiment 6)
In this embodiment, a structure of a semiconductor device according to this embodiment that enables transmission to a distant place by using a voltage output from a battery in synchronization with a signal received by an antenna circuit will be described.

  FIG. 30 is a block diagram showing an example of the configuration of the semiconductor device 9200 according to this embodiment.

  The semiconductor device 9200 shown in FIG. 30 determines the transmission distance based on the received signal, supplies the signal modulated by the modulation circuit 9210 to the antenna circuit 9201 when the transmission distance is short, and modulates when the transmission distance is long. The signal modulated by the circuit 9210 is amplified by the amplifier 9211 and supplied to the antenna circuit 9201. The amplifier 9211 operates with the voltage of the battery 9215.

  Note that the battery 9215 is connected to an antenna-rectifier circuit group 9216 in which a plurality of pairs of antennas and rectifier circuits are assembled. The battery 9215 is charged through the charging circuit 9217 with the radio waves received by the antennas included in the antenna-rectifier circuit group 9216.

  A semiconductor device 9200 according to this embodiment includes an antenna circuit 9201, a signal processing circuit 9202, and a battery 9215.

  The antenna shape of the antenna circuit 9201 can take various forms. For example, what was demonstrated in Embodiment 1 shown in FIG. 6 can be used. In addition, a so-called dipole antenna, loop antenna, Yagi antenna, patch antenna, or minute antenna can be used. In the case where an antenna is formed over the same substrate as a substrate on which a transistor included in the signal processing circuit is formed, the antenna shape is preferably a minute loop antenna, a minute dipole antenna, or the like.

  Further, the antenna circuit 9201 may include a unit that changes the frequency of the received signal. For example, when the antenna shape is a loop antenna, a resonance circuit may be formed by an antenna coil that constitutes the antenna and a capacitor.

  As the battery 9215, a secondary battery such as a lithium ion battery, a lithium secondary battery, a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead storage battery, an air secondary battery, a nickel zinc battery, or a silver zinc battery can be used. However, it is not limited to these. A large-capacity capacitor or the like may also be applied. In particular, since a lithium ion battery or a lithium secondary battery has a large charge / discharge capacity, the semiconductor device can be downsized by being applied to a battery included in the semiconductor device of the present invention. Note that the battery 9215 may be formed over the same substrate on which the signal processing circuit 9202 is formed by forming an active material or an electrolyte of a lithium ion battery by a sputtering method, or the antenna circuit 9201 is formed. It may be formed on the same substrate as the other substrate. By forming the battery 9215 over the substrate over which the signal processing circuit 9202 and the antenna circuit 9201 are formed, the yield is improved. The lithium metal battery uses a lithium ion-containing transition metal oxide, metal oxide, metal sulfide, iron-based compound, conductive polymer or organic sulfur-based compound as the positive electrode active material, and lithium (alloy) as the negative electrode active material. By using an organic electrolytic solution, a polymer electrolyte, or the like as the electrolyte, the battery 9215 having a larger charge / discharge capacity can be obtained.

  The signal processing circuit 9202 includes a rectifier circuit 9203, a power supply circuit 9204, a demodulation circuit 9205, a logic circuit 9206, a memory control circuit 9207, a memory circuit 9208, a logic circuit 9209, a modulation circuit 9210, and an amplifier 9211. , Switch 9212, switch 9213, and switch 9214. Various memories can be applied to the memory circuit 9208. For example, a mask ROM or a nonvolatile memory can be applied.

  The rectifier circuit 9203 rectifies and smoothes the AC signal received by the antenna circuit 9201. The voltage output from the rectifier circuit 9203 is supplied to the power supply circuit 9204. In the power supply circuit 9204, a desired voltage is generated. Then, a voltage serving as a power supply for various circuits of the signal processing circuit 9202 is supplied from the power supply circuit 9204.

  The signal processing of the semiconductor device according to the present invention is as follows. A communication signal received by the antenna circuit 9201 is input to the demodulation circuit 9205. Usually, a communication signal is sent by performing a process such as ASK modulation or PSK modulation on a carrier such as 13.56 MHz or 915 MHz.

  FIG. 30 shows an example in which a 13.56 MHz communication signal is used. A communication signal subjected to ASK modulation or PSK modulation is received by an antenna circuit 9201 and demodulated by a demodulation circuit 9205. The demodulated signal is sent to the logic circuit 9206 for analysis. The signal analyzed by the logic circuit 9206 is sent to the memory control circuit 9207, and the memory control circuit 9207 controls the memory circuit 9208 based on the signal. Then, the memory control circuit 9207 reads data stored in the memory circuit 9208 and sends the data to the logic circuit 9209. The data sent to the logic circuit 9209 is encoded by the logic circuit 9209, and the modulation circuit 9210 modulates the carrier by the signal. When the transmission distance is short, the modulated signal is sent to the antenna circuit 9101. When the transmission distance is long, the modulated signal is first sent to the amplifier 9211, and the signal is amplified. Are sent to the antenna circuit 9201.

  That is, whether the transmission distance is long or short is determined based on the signal sent to the logic circuit 9206, and the switch 9212, the switch 9213, and the switch 9214 are controlled by the logic circuit 9206. When it is determined that the transmission distance is short, the switch 9213 connects the modulation circuit 9210 and the antenna circuit 9201, and the switch 9212 and the switch 9214 are turned off. When it is determined that the transmission distance is long, the switch 9213 connects the modulation circuit 9210 and the amplifier 9211, and the switch 9212 and the switch 9214 are turned on. That is, when it is determined that the transmission distance is long, the amplifier 9211 amplifies the signal output from the modulation circuit 9210 using the voltage output from the battery 9215 as a power source and transmits the amplified signal to the antenna circuit 9201.

  Note that as a method for determining the transmission distance, a control signal for determining the transmission distance may be sent to the logic circuit 9206 in advance, or may be determined based on the magnitude of the signal demodulated by the demodulation circuit 9205.

  In FIG. 30, the power supply circuit 9204 and the battery 9215 are not connected. Of course, the battery 9215 may be connected to the power supply circuit 9204 and the power supply circuit 9204 may be driven.

  Note that this embodiment can be implemented in combination with any of the other embodiments in this specification.

(Embodiment 7)
An application example of the semiconductor device of the present invention will be described.

  In this embodiment, an application of a semiconductor device that performs data communication by wireless communication of the present invention will be described. The semiconductor device of the present invention includes, for example, banknotes, coins, securities, bearer bonds, certificate documents (driver's license, resident's card, etc.), packaging containers (wrapping paper, bottles, etc.), recording media (DVD software) And video tapes), vehicles (bicycles, etc.), personal items (such as bags and glasses), foods, plants, animals, human bodies, clothing, daily necessities, electronic equipment, etc. and luggage tags It can be used as a so-called ID label, ID tag, or ID card provided on an article. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions, television receivers, television receivers), mobile phones, and the like.

  In the present embodiment, an application example of the present invention and an example of a product to which they are attached will be described with reference to FIG.

  FIG. 31A illustrates an example of a state of a finished product including the semiconductor device according to the present invention. A plurality of ID labels 3003 including a semiconductor device 3002 are provided on a label mount 3001 (separate paper). The ID label 3003 is stored in the box 3004. In addition, on the ID label 3003, information (product name, brand, trademark, trademark owner, seller, manufacturer, etc.) regarding the product or service is recorded, while the built-in semiconductor device The ID number unique to the product (or product type) is attached, and it is possible to easily grasp illegal activities such as forgery, infringement of intellectual property rights such as trademark rights and patent rights, and unfair competition. In addition, in semiconductor devices, a great deal of information that cannot be clearly specified on the container or label of the product, for example, the product's production area, sales location, quality, raw materials, efficacy, use, quantity, shape, price, production method, usage method , Production time, use time, expiration date, expiry date, instruction manual, intellectual property information about products, etc. can be entered, traders and consumers access such information with a simple reader be able to. In addition, the producer side can easily rewrite and erase, but the trader and consumer side cannot rewrite and erase.

  FIG. 31B illustrates a label ID tag 3011 in which a semiconductor device 3012 is incorporated. By providing the ID tag 3011 in the product, product management becomes easy. For example, when a product is stolen, the culprit can be quickly grasped by following the route of the product. Thus, by providing the ID tag, it is possible to distribute a product excellent in so-called traceability.

  FIG. 31C shows an example of a state of a completed product of the ID card 3021 including the semiconductor device 3022 according to the present invention. The ID card 3021 includes all kinds of cards such as a cash card, a credit card, a prepaid card, an electronic ticket, electronic money, a telephone card, and a membership card.

  FIG. 31D shows a state of a completed product of the bearer bond 3031. In the bearer bond 3031, a semiconductor device 3032 is embedded, and the periphery of the semiconductor device is protected by resin. Here, the resin is filled with a filler. The bearer bond 3031 can be created in the same manner as the ID label, ID tag, and ID card according to the present invention. The bearer bonds include stamps, tickets, tickets, admission tickets, gift certificates, book tickets, stationery tickets, beer tickets, gift tickets, various gift certificates, various service tickets, etc. Is not to be done. Further, by providing the semiconductor device 3032 of the present invention to bills, coins, securities, bearer bonds, certificates, etc., an authentication function can be provided, and if this authentication function is utilized, forgery is prevented. be able to.

  FIG. 31E illustrates a book 3043 to which an ID label 3041 including a semiconductor device 3042 according to the present invention is attached. The semiconductor device 3042 of the present invention is fixed to an article by being attached to or embedded in the surface. As shown in FIG. 31E, if it is a book, it can be inserted into paper, and if it is a package made of an organic resin, it is fixed to each article by being embedded in the organic resin.

  Although not shown here, by providing the semiconductor device of the present invention in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., the efficiency of inspection systems and the like can be improved. Can be achieved. Further, forgery or theft can be prevented by providing a semiconductor device in the vehicle. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by burying a wireless tag in a living creature such as livestock, it is possible to easily identify the year of birth, sex, type, or the like.

  FIG. 32A shows a plastic bottle 2722 to which an ID label 2508 according to the present invention is attached. Further, in the case of a non-contact type thin film integrated circuit device, the antenna and the chip can be integrally formed, and it becomes easy to directly transfer to a product having a curved surface.

  FIG. 32B shows a state in which an ID label 2720 is directly attached to the fruits 2725. FIG. 32C shows an example of packaging vegetables 2724 with packaging films. Note that when the chip 2721 is attached to the product, it may be peeled off. However, when the product is wrapped with packaging films, it is difficult to remove the packaging film 2723. There is. In addition, it is possible to easily manage products by recording the date of collection, date of manufacture, etc. of such fresh foods on the ID label.

  The semiconductor device of the present invention is not limited to the above-described products, and can be used for all products.

  Next, applications of the mobile electronic device including the power receiving device of the present invention will be described. A mobile electronic device including the power receiving device of the present invention includes, for example, a mobile phone, a digital video camera, a computer, a portable information terminal (such as a mobile computer, a mobile phone, a portable game machine, or an electronic book), and a recording medium. An image reproducing apparatus (specifically, Digital Versatile Disc (DVD)) can be given. An example thereof will be described below with reference to the drawings.

  Note that in this embodiment, the antenna circuit described in Embodiment 2 is simply referred to as an antenna because only the shape and the mounting position thereof are described.

  FIG. 33A illustrates an example of a cellular phone, which includes a main body 2501, an audio output portion 2502, an audio input portion 2503, a display portion 2504, operation switches 2505, an antenna 2506, and the like. A power receiving device of the present invention includes a signal processing circuit and a battery inside a main body 2501, and can receive power transmitted by a wireless signal from the outside with an antenna 2506 to charge the battery. Therefore, when charging the battery, it is possible to supply power required for display on the display portion 2504 without charging with a dedicated charger.

  FIG. 33B illustrates an example of a portable computer (also referred to as a laptop computer), which includes a main body 2511, a housing 2512, a display portion 2513, a keyboard 2514, an external connection port 2515, a pointing device 2516, an antenna 2517, and the like. ing. A power receiving device of the present invention includes a signal processing circuit and a battery inside a main body 2511, and can receive power transmitted from the outside by a radio signal by an antenna 2517 and charge the battery. Therefore, when the battery is charged, it is possible to supply power required for display of the display portion 2513 without charging with a dedicated charger.

  FIG. 33C illustrates an example of a digital camera, which includes a main body 2521, a display portion 2522, operation keys 2523, a speaker 2524, a shutter button 2525, an image receiving portion 2526, an antenna 2527, and the like. The power receiving device of the present invention includes a signal processing circuit and a battery inside the main body 2521, and can receive power transmitted from the outside by a wireless signal by the antenna 2527 and charge the battery. Therefore, when charging the battery, it is possible to supply power required for display on the display portion 2522 without charging with a dedicated charger.

  FIG. 33D illustrates an example of a portable image playback device (specifically, a DVD playback device) that includes a recording medium. A main body 2331, a housing 2532, a first display portion 2533, and a second display portion 2534. , A recording medium (DVD or the like) reading unit 2535, operation keys 2536, a speaker unit 2537, an antenna 2538, and the like. The power receiving device of the present invention includes a signal processing circuit and a battery inside the main body 2331, and can receive power transmitted from the outside by a wireless signal by the antenna 2538 and charge the battery. Therefore, when charging the battery, it is possible to supply power required for the display portions of the first display portion 2533 and the second display portion 2534 without charging with a dedicated charger.

  FIG. 33E illustrates a digital video camera which includes a main body 2541, a display portion 2542, an audio input portion 2543, operation switches 2544, a battery 2545, an image receiving portion 2546, an antenna 2547, and the like. The power receiving device of the present invention includes a signal processing circuit and a battery inside the main body 2541, and can receive power transmitted from the outside by a wireless signal by the antenna 2547 and charge the battery. Therefore, when charging the battery, it is possible to supply electric power required for display of the display portion 2542 and the like without charging with a dedicated charger.

  FIG. 33F illustrates a portable information terminal which includes a main body 2551, a stylus 2552, a display portion 2553, operation buttons 2554, an external interface 2555, an antenna 2556, and the like. The power receiving device of the present invention includes a signal processing circuit and a battery inside the main body 2551, and can receive power transmitted from the outside by a wireless signal by the antenna 2556 to charge the battery. Therefore, when charging the battery, it is possible to supply power required for display on the display portion 2553 without charging with a dedicated charger.

  FIG. 34A shows a television receiver in which only a display can be carried wirelessly. A housing 2601 incorporates a video signal receiver and the power receiving device of the present invention, and the display portion 2602 and the speaker portion 2603 are driven by a battery in the power receiving device. The battery can be charged by receiving a signal transmitted from the power feeder 2604 wirelessly by the power receiving device. A signal transmitted wirelessly is transmitted and received by an antenna 2606A provided on the display side and an antenna 2606B provided on the power feeder side, whereby electric power can be supplied.

  The power feeder 2604 can transmit and receive a video signal. Therefore, even when the display is removed from the power feeder as shown in FIG. 34B, the video signal can be transmitted to the signal receiver of the display. it can. The housing 2601 is controlled by operation keys 2605. The device illustrated in FIG. 34 can also be called a video / audio two-way communication device because a signal can be sent from the housing 2601 to the power feeder 2604 by operating the operation key 2605. In addition, by operating the operation key 2605, a signal is transmitted from the housing 2601 to the power feeder 2604, and a signal that can be transmitted by the power feeder 2604 is received by another electronic device, thereby controlling communication of the other electronic device. The power feeder 2604 can also be called a general purpose remote control device.

  Note that by attaching the display portion 2602 and the speaker portion 2603 to the power feeder 2604, viewing can be performed as a stationary television receiver. In the form of a stationary television receiver, the power feeder 2604, the display portion 2602, and the speaker portion 2603 may be directly connected to receive power.

  FIG. 35A illustrates a power supply system using a large-sized power feeder and a mobile electronic device such as a car or a bicycle having a battery.

A power feeder 2730 illustrated in FIG. 35A is used for automobiles and bicycles each including a power receiving device including an antenna and a battery (such as an antenna 2732A and a battery 2733A) using a parabolic antenna 2726 having a parabolic curved reflecting surface. Transmit power. Therefore, it is usually particularly suitable when the battery is run up, which is usually the case in an automobile where it is difficult to generate power using a generator using the power of the combustion engine. In addition, even in a bicycle with a so-called assist function that uses electric power on a slope that is difficult to drive by human power, even if the battery is fully charged, it can be charged by receiving power for a certain period of time. Become. A battery-equipped bicycle is preferable because the battery can be charged without using charging from a household AC power source, and thus the user is less required to charge the battery by wire.

  FIG. 35B illustrates a structure of a vehicle including a power receiving device. The automobile has an antenna 2732D and a battery 2733D. As shown in FIG. 35B, the antennas may be provided along the outer periphery of the automobile, or may be provided at a plurality of locations such as a windshield and a rear glass.

  Moreover, the structure of the power receiving device provided in the power feeder and the mobile electronic device covers a wide variety of forms. As an example, a description will be given with reference to FIG.

  The structure illustrated in FIG. 36A illustrates a power supply system of a power receiving device having a power feeder and moving means between automobiles. FIG. 36A illustrates a structure in which both automobiles include a battery and an antenna. Here, one automobile has an antenna and a battery 2801, and the antenna functions as the power receiving antenna 2802. The other automobile has an antenna and a battery 2803, and the antenna functions as a feeding antenna 2804.

  In FIG. 36A, even when the battery 2801 of one car is out of charge, the power charged in the battery 2803 of the other car is output from the power feeding antenna 2804 to the power receiving antenna 2802 as a radio signal. By doing so, the battery 2801 can be charged. Note that the charging time can be shortened by electromagnetic induction associated with magnetic field coupling by outputting a wireless signal for power supply by bringing the power receiving antenna 2802 and the power feeding antenna 2804 close to each other. In the configuration of FIG. 36 (A), since it is not necessary to connect the wired batteries for supplying power, the user can perform charging work by receiving power from the antenna even if the user remains in the car. It can be performed.

  FIG. 36B illustrates another structure different from the structure illustrated in FIG. The structure shown in FIG. 36B is particularly suitable for a so-called electric vehicle that obtains power by electric power.

  In the structure shown in FIG. 36B, when the automobile comes over the piezoelectric sensor 2806, it supplies power by a wireless signal from the power feeder 2805. Accompanying the power supply by the wireless signal from the power feeder 2805, the power is received by the antenna 2807 of the power receiving device in the car, and the battery 2808 is charged. Therefore, there is no need to connect to a wired AC power source for charging the battery 2808, and the user can charge the battery while in the car, improving convenience. it can.

  As described above, the power receiving device of the present invention can be provided and used for any article that is driven by electric power.

Note that in the mobile electronic device shown in this embodiment, the shape of the antenna is not limited to the shape shown in the drawings, and can be appropriately replaced with the shape of the antenna shown in any of the other embodiments. is there.

  This embodiment mode can be freely combined with the above embodiment modes.

FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 10 illustrates a configuration example of a conventional semiconductor device. FIG. 10 illustrates a configuration example of a conventional semiconductor device. FIG. 6 illustrates an example of an antenna circuit included in a semiconductor device of the present invention. 4A and 4B illustrate an example of a shape of an antenna included in a semiconductor device of the present invention. FIG. 6 shows a structural example of a power supply circuit included in a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 14 illustrates a structural example of a reader / writer that transmits and receives data to and from a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a configuration example of a power receiving device of the present invention. FIG. 6 illustrates a configuration example of a power receiving device of the present invention. FIG. 6 illustrates a configuration example of a power receiving device of the present invention. FIG. 6 illustrates a configuration example of a power receiving device of the present invention. FIG. 6 illustrates a configuration example of a power receiving device of the present invention. FIG. 6 illustrates a configuration example of a power receiving device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 13 illustrates an example of a method for operating a semiconductor device of the present invention. FIG. 13 illustrates an example of a method for operating a semiconductor device of the present invention. FIG. 13 illustrates an example of a method for operating a semiconductor device of the present invention. FIG. 13 illustrates an example of a method for operating a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 13 shows an example of usage of a semiconductor device of the present invention. FIG. 13 shows an example of usage of a semiconductor device of the present invention. The figure which shows the example of the usage condition of the power receiving apparatus of this invention. The figure which shows the example of the usage condition of the power receiving apparatus of this invention. The figure which shows the example of the usage condition of the power receiving apparatus of this invention. The figure which shows the example of the usage condition of the power receiving apparatus of this invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Semiconductor device 101 Antenna circuit 102 Antenna circuit group 103 Signal processing circuit 104 Battery 105 Rectifier circuit 106 Power supply circuit 107 Rectifier circuit group 108 Demodulator circuit 109 Amplifier 110 Logic circuit 111 Memory control circuit 112 Memory circuit 113 Logic circuit 114 Amplifier 115 Modulator circuit 116 Charging circuit 117 Antenna-rectifier circuit group 201 Reader / writer 401 Antenna 402 Resonant capacitor 403 Antenna circuit 404 Diode 405 Diode 406 Smoothing capacitor 407 Rectifier circuit 501 Receiver unit 502 Transmitter unit 503 Control unit 504 Interface unit 505 Antenna circuit 506 Host device 507 Antenna 508 Resonance capacity 600 Power feeder 601 Power transmission control unit 602 Antenna circuit 603 Antenna 604 Resonance capacity 701 Substrate 702 Chip 03 battery 704 antenna circuit 706 reader / writer 707 wireless signal 711 connection terminal 712 connection terminal 851 power generation element 1001 resistor 1002 transistor 1003 transistor 1004 current supply resistor 1005 transistor 1006 transistor 1007 transistor 1008 transistor 1009 transistor 1010 resistor 1011 reference voltage circuit 102a antenna Circuit 102n antenna circuit 107a rectifier circuit 107n rectifier circuit 1901 substrate 1902 insulating film 1903 peeling layer 1904 insulating film 1905 semiconductor film 1906 gate insulating film 1907 gate electrode 1908 impurity region 1909 impurity region 1910 insulating film 1911 impurity region 1913 conductive film 1914 insulating film 1918 Insulating film 1919 Element forming layer 1920 Sheet material 1 21 Sheet material 1935 Substrate 1937 Resin 1938 Conductive particle 202a Radio wave 202b Radio wave 202c Radio wave 202d Radio wave 2331 Main body 2501 Main body 2502 Audio output unit 2503 Audio input unit 2504 Display unit 2505 Operation switch 2506 Antenna 2508 ID label 2509 Chip 2511 Main body 2512 Case 2513 Display unit 2514 Keyboard 2515 External connection port 2516 Pointing device 2517 Antenna 2521 Main body 2522 Display unit 2523 Operation key 2524 Speaker 2525 Shutter button 2526 Image receiving unit 2527 Antenna 2532 Housing 2533 Display unit 2534 Display unit 2535 unit 2536 Operation key 2537 Speaker unit 2538 Antenna 2541 Main unit 2542 Display unit 2543 Audio input unit 2544 Operation switch 2545 Battery 2546 Image receiving unit 2547 Antenna 2551 Main body 2552 Stylus 2553 Display unit 2554 Operation button 2555 External interface 2556 Antenna 2601 Housing 2602 Display unit 2603 Speaker unit 2604 Power feeder 2605 Operation key 2700 Mobile electronic device 2701 Power receiving unit 2702 Antenna Circuit group 2703 Signal processing circuit 2704 Battery 2705 Power load unit 2707 Rectifier circuit group 2708 Power circuit 2709 Display unit 2710 Integrated circuit unit 2711 Pixel unit 2712 Display control unit 2716 Charging circuit 2720 ID label 2721 Chip 2722 PET bottle 2723 Films for packaging 2724 Vegetables 2725 Fruits 2726 Parabolic antenna 2730 Feeder 2732A Antenna 2733A Battery 2732B Antenna 2733B Battery 2732C Antenna 2733C Battery 2732D Antenna 2733D Battery 2800 Power feeder 2801 Battery 2802 Power receiving antenna 2803 Battery 2804 Power feeding antenna 2805 Power feeder 2806 Piezoelectric sensor 2807 Antenna 2808 Battery 3001 Label mount 3002 Semiconductor device 3003 ID label 3004 ID tag 3012 Semiconductor device 3021 ID card 3022 Semiconductor device 302A Chip 302B Chip 302C Chip 302D Chip 302E Chip 3031 Bearer bond 3032 Semiconductor device 303A Antenna 303B Antenna 303C Antenna 303D Antenna 303E Antenna 3041 ID label 3042 Half Body device 3043 book 3100 semiconductor device 3101 antenna circuit 3102 signal processing circuit 3103 battery 3104 power supply circuit 3105 demodulation circuit 3106 amplifier 3107 logic circuit 3108 memory control circuit 3109 memory circuit 3110 logic circuit 3111 amplifier 3112 modulation circuit 3200 semiconductor device 3201 antenna circuit 3202 signal Processing circuit 3203 Rectification circuit 3204 Power supply circuit 3205 Demodulation circuit 3206 Amplifier 3207 Logic circuit 3208 Memory control circuit 3209 Memory circuit 3210 Logic circuit 3211 Amplifier 3212 Modulation circuit 3300 Power receiving device section 3302 Antenna circuit 3303 Power transmission control section 3304 Antenna circuit 3305 Antenna 701a Substrate 701b Substrate 702a Chip 702b Chip 705a Antenna circuit 7 5b Antenna circuit 9100 Semiconductor device 9101 Antenna circuit 9102 Signal processing circuit 9103 Rectifier circuit 9104 Power supply circuit 9105 Demodulator circuit 9106 Logic circuit 9107 Memory control circuit 9108 Memory circuit 9109 Logic circuit 9110 Modulator circuit 9111 Level shifter circuit 9112 Booster circuit 9113 Switch 9114 Battery 9115 Charging Circuit 9116 Antenna-rectifier circuit group 9200 Semiconductor device 9201 Antenna circuit 9202 Signal processing circuit 9203 Rectifier circuit 9204 Power supply circuit 9205 Demodulator circuit 9206 Logic circuit 9207 Memory control circuit 9208 Memory circuit 9209 Logic circuit 9210 Modulator circuit 9211 Amplifier 9212 Switch 9213 Switch 9214 Switch 9215 battery 9216 antenna-rectification circuit Group 9217 charging circuit 9300 semiconductor device 9301 charge and discharge control circuit 9401 STEP
9402 STEP
9403 STEP
9404 STEP
9405 STEP
9501 STEP
9502 STEP
9503 STEP
9504 STEP
9505 STEP
9601 STEP
9602 STEP
9603 STEP
9604 STEP
9605 STEP
9606 STEP
9701 STEP
9702 STEP
9703 STEP
1900a n-channel thin film transistor 1900b n-channel thin film transistor 1900c p-channel thin film transistor 1900d n-channel thin film transistor 1900e p-channel thin film transistor 1900f n-channel thin film transistor 1905a semiconductor film 1905b semiconductor film 1905c semiconductor film 1905d semiconductor film 1905e semiconductor film 1905f semiconductor film 1907a conductive Film 1907b conductive film 1912a insulating film 1912b insulating film 1915a conductive film 1915b conductive film 1916a conductive film 1916b conductive film 1917a conductive film 1917b conductive film 1931a conductive film 1931b conductive film 1932a opening 1932b opening 1934a conductive film 1934b conductive film 1936a conductive film 1936b Conductive film 2606A Antenna 26 06B Antenna 2702n Antenna circuit

Claims (4)

A first antenna circuit for transmitting and receiving data; a plurality of antenna circuits for receiving radio waves for power supply; a signal processing circuit; a power storage unit; and a power generation element.
The signal processing circuit has a plurality of rectifier circuits electrically connected to each of the first antenna circuit and the plurality of antenna circuits,
The first antenna circuit and the plurality of antenna circuits receive the electric power for charging the power storage unit wirelessly via the signal processing circuit,
The plurality of rectifier circuits are electrically connected to a charging circuit;
The charging circuit is electrically connected to the power storage unit via a charge / discharge control circuit,
The power receiving device, wherein the power generation element is electrically connected to the power storage unit. In claim 1 ,
The power generating device is a power receiving device using a solar cell, a piezoelectric element, or a microstructure. In claim 1 or 2 ,
The power storage device includes one or both of a battery and a capacitor. In claim 3 ,
The power receiving device, wherein the battery is a lithium battery, a nickel metal hydride battery, a nickel-cadmium battery, or an organic radical battery.

Images