JP5369519B2 - Capacitor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a capacitor which reduces the ESR (equivalent series resistance). <P>SOLUTION: The capacitor is provided with (a) a pair of electrode layers 15 and 17, (b) a dielectric layer 16 disposed between a pair of the electrode layers 15 and 17 and (c) a pair of lead out electrodes 30s and 32; 30t and 34 connected to a pair of the electrode layers 15 and 17. One electrode layer 15 has (i) a center part 15p, overlapping a capacity-generating part, where a pair of the electrode layers 15 and 17 confront each other through the dielectric layer 16, when it is viewed via from a direction, where the electrode layers 15 and 17 and the dielectric layer 16 are laminated and (ii) a periphery part 15q, which extends outward from the center part and continuously surrounds the center part over the whole circumference. One extraction electrode 30s is connected to a periphery part 15s of one electrode layer 15 at one part, and a connection face continuously surrounds the center part 15p over the entire circumference. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a capacitor, and more particularly to a capacitor structure suitable for a variable capacitor.

  Conventionally, various capacitors having a structure in which a dielectric layer is disposed between a pair of electrode layers have been proposed.

For example, in the variable capacitor shown in the sectional view of FIG. 20, the lower electrode layer 2, the dielectric layer 3, the upper electrode layer 4, and the protective layer 5 are laminated on the support substrate 1, and the lower electrode layer 2 and the upper electrode layer 4 are formed. A parallel plate type variable capacitor having a dielectric layer 3 disposed therebetween. For the dielectric layer 3, a ferroelectric thin film material having a high capacitance change rate such as (Ba, Sr) TiO ₃ is used. For the lower electrode layer 2 and the upper electrode layer 4, Pt or the like that has resistance to a high-temperature oxidation atmosphere when forming the dielectric thin film of the dielectric layer 3 but has a high specific resistance is used. The lower electrode layer 2 and the upper electrode layer 4 are externally connected via external terminals 6 and 7 such as solder balls and metal bumps disposed in a single through hole (through hole) formed in the protective layer 5. It is connected to a circuit (see, for example, Patent Document 1).
JP 2002-329641 A

  For an ideal capacitor, the impedance decreases as the frequency increases. However, in an actual capacitor, the impedance gradually decreases as the frequency increases up to a certain frequency. However, when the frequency exceeds a certain frequency, the impedance gradually increases as the frequency increases. The lowest point of the impedance is called an equivalent series resistance (hereinafter referred to as “ESR”).

  For example, if a structure for pulling out from the lower electrode layer 2 by the external terminal 6 as shown in FIG. 20 is adopted for the high frequency variable capacitor, there is a problem that ESR increases and loss in the high frequency band increases due to the influence of ESR.

That is, the high-frequency variable capacitor has a variable rate of several tens of percent at a control voltage of 10 V or less, with a capacitance value of several pF to several tens of pF, unlike a general thin film capacitor having a higher capacitance density. Required. The area of the required capacity generating portion is smaller than 30 μm × 30 μm and is several tens to several hundreds μm ² , and high processing accuracy is required.

  Conventionally, the lead-through hole for connecting the lower electrode layer to the external connection terminal is indicated by reference numeral 22q in FIGS. 17 to 19, particularly FIGS. 17C and 19B, which will be described later. Thus, it is formed only in the direction closer to the external connection terminal for the lower electrode than the capacitance generating portion.

  The loss at high frequency of the variable capacitor is strongly influenced by the conductive loss in addition to the dielectric loss. In particular, in the case of a low-capacitance element, the capacitance generation portion becomes smaller, and the area of the connection portion between the extraction electrode and the upper and lower electrode layers is reduced, resulting in an increase in wiring resistance. ) Occurs.

  The upper and lower electrode layers, particularly the lower electrode material, use Pt, Pd, or the like that is resistant in a high-temperature oxidizing atmosphere when forming the dielectric thin film, but these are materials with high specific resistance.

  From the above viewpoint, an element structure that reduces the conductive loss is required.

  In view of such circumstances, the present invention is intended to provide a capacitor capable of reducing ESR.

  In order to solve the above problems, the present invention provides a capacitor configured as follows.

The capacitor includes (a) a pair of electrode layers, (b) a dielectric layer disposed between the pair of electrode layers, and (c) a pair of lead electrodes respectively connected to the electrode layers. When one of the electrode layers is seen through from the stacking direction of the electrode layer and the dielectric layer, (i) a central portion where the pair of electrode layers overlaps a capacitance generating portion opposed via the dielectric layer; (Ii) an outer peripheral portion extending outward from the central portion and continuously surrounding the central portion over the entire circumference. One of the lead electrodes is connected to the dielectric layer side at one location with respect to the one electrode layer of the outer peripheral portion of the one electrode layer, and the connection surface is continuous over the entire circumference of the central portion. Surround with . Before Symbol One of the extraction electrode includes first and second electrode films. The first electrode film is connected to the one electrode layer at the connection surface and is formed in a donut shape. The second electrode film is connected in a half-moon shape to an end surface of the first electrode film opposite to the connection surface.

  According to the above configuration, when a high-frequency voltage is applied between the pair of electrode layers of the capacitor, the current flows in one electrode layer from the connection surface and the central portion with one lead electrode formed on the outer peripheral portion. Flows radially and evenly. In one electrode layer, the number of current paths between the central portion and the connection surface of the one extraction electrode is increased, and the conductive loss is reduced. Therefore, ESR can be reduced, and loss in a high frequency band can be reduced.

  The capacitor of the present invention can reduce ESR.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS.

  Example 1 A variable capacitor 10 of Example 1 will be described with reference to FIGS. FIG.1 and FIG.2 is sectional drawing which shows a manufacturing process. 3-8 is a principal part top view in the middle of manufacture. 1 and 2 are cross-sectional views taken along line AA in FIGS.

  First, an outline of the variable capacitor 10 according to the first embodiment will be described.

  As shown in the cross-sectional view of FIG. 2H, the variable capacitor 10 according to the first embodiment has a capacitor structure in which a dielectric layer 16 is sandwiched between an upper electrode layer 17 and a lower electrode layer 15 on a substrate 12. The upper electrode layer 17 and the lower electrode layer 15 are electrically connected to the external electrodes 32s and 34s via the extraction electrodes 30a and 32; 30b and 34, respectively.

  When seen through from the stacking direction, as shown in the plan view of FIG. 3, the lower electrode layer 15 has a central portion where the upper electrode layer 17 and the lower electrode layer 15 overlap the capacitance generating portion 18 facing each other through the dielectric layer 16. 15p and an outer peripheral portion 15q extending outward from the central portion 15p and continuously surrounding the central portion 15p over the entire circumference. When seen through from the stacking direction, the central portion 15p of the lower electrode layer 15 is a portion overlapping the upper electrode layer 17, and the outer peripheral portion 15q of the lower electrode layer 15 is other than the circular central portion 15p of the circular lower electrode layer 15. It is a donut-shaped part.

  Then, as shown in the cross-sectional view of FIG. 2H and the main part plan view of FIG. 4, an extraction electrode that connects the lower electrode layer 15 and the external electrode 34 s to the outer peripheral portion 15 q of the lower electrode layer 15. 30b is connected at one location, and the connection surface 15s with the extraction electrode 30b extends so as to continuously surround the outer side of the center portion 15p over the entire circumference.

  Thus, when a high frequency voltage is applied between the pair of electrode layers 15 and 17 of the capacitor, the current flows in the lower electrode layer 15 from the connection surface 15s and the central portion with the extraction electrode 30b formed in the outer peripheral portion 15q. It flows radially and evenly between 15p.

Further, as Reference Example 1 , instead of FIG. 4, the lower electrode layer 15 and the external electrode are arranged on the outer peripheral portion 15 q of the lower electrode layer 15 when seen through from the stacking direction as shown in the plan view of the main part of FIG. The connection electrode 15k is divided into four or more locations (four locations in FIG. 5) and connected, and the connection surface 15k is centered on the center portion 15p and is equally spaced around the center portion 15p. (It is every 90 degrees in FIG. 5).

In this reference example 1 , when a high frequency voltage is applied between the electrode layers 15 and 17, in the lower electrode layer 15, the current flows between the connection surface with the extraction electrode formed in the outer peripheral portion 15q and the central portion 15p. Between them, it flows almost radially and substantially evenly.

  As described above, the connection surfaces 15s and 15k for connecting the extraction electrode to the outer peripheral portion 15q of the lower electrode layer 15 are arranged in a donut shape around the central portion 15p, or divided into four or more equal intervals. By disposing, the current path in the lower electrode layer 15 having a relatively high specific resistance between the capacitor structure and the external electrode is increased to disperse the current and reduce the conductive loss, thereby reducing the ESR. Loss in the high frequency band can be reduced.

  Next, the manufacturing process and manufacturing example of the variable capacitor 10 of Example 1 will be described.

  (1) First, as shown in FIG. 1A, an adhesion layer 14, a lower electrode layer 15, a dielectric layer 16, and an upper electrode layer 17 are stacked on a substrate 12.

In the production example, a Ba _0.7 Sr _0.3 TiO ₃ (BST) thin film is formed as an adhesion layer 14 on a SiO ₂ / Si substrate 12 having a SiO ₂ film formed on the surface by a chemical solution deposition (CSD) method. Formed. Specifically, a BST raw material solution having a stoichiometric composition was applied onto the SiO ₂ film of the substrate 12, dried, and crystallized by a heat treatment at 650 ° C. for 30 minutes to obtain a BST thin film. Next, a 300-nm-thick Pt film was formed on the BST thin film of the adhesion layer 14 by sputtering to form the lower electrode layer 15. Next, a BST thin film was formed as the dielectric layer 16 on the lower electrode layer 15 by the CSD method in the same manner as the BST thin film of the adhesion layer 14. That is, the raw material solution was applied on the Pt film of the lower electrode layer 15, dried at 300 to 400 ° C., and crystallized by heat treatment at 650 ° C. for 30 minutes to obtain a BST thin film. Next, a 300 nm-thickness Pt film was formed on the BST thin film of the dielectric layer 16 by a sputtering method to form the upper electrode layer 17.

  (2) Next, as shown in FIG. 1 (b), the layers 14 to 17 are patterned to form the capacitance generator 18. At this time, as shown in the plan view of the main part in FIG. 3, when viewed from the stacking direction, the dielectric layer 16 is formed larger than the upper electrode layer 17 and the lower electrode layer 15 is formed larger than the dielectric layer 16. ing. The capacitance generator 18 is a portion where the upper electrode layer 17 and the lower electrode layer 15 face each other with the dielectric layer 16 interposed therebetween, that is, a portion overlapping the upper electrode layer 17 in FIG. When viewed from the stacking direction, the lower electrode layer 15 has a central portion 15p that overlaps the capacitance generating portion 18, that is, the upper electrode layer 17, and extends outward from the central portion 15p, and is continuous over the entire circumference of the central portion 15p. And an outer peripheral portion 15q that surrounds it.

  In the manufacturing example, after forming a resist mask, the upper electrode layer 17, the dielectric layer 16 therebelow, and the lower electrode layer 15 were sequentially dry etched by ion milling. This is a capacitor structure. Next, the above capacitor structure was heat-treated at 800 ° C. for 30 minutes.

  (3) Next, as shown in FIG. 1C, an insulating protective film 20 and a first organic protective film 22 are formed. In the first organic protective film 22, a through hole 22 a is formed on the upper electrode layer 17, and a through hole 22 b is formed on the outer peripheral portion 15 q of the lower electrode layer 15.

  As shown in the plan view of the main part of FIG. 4, when viewed from the stacking direction, the through hole 22b continuously surrounds the periphery of the through hole 22a over the entire circumference, and is point-symmetric (rotated) around the through hole 22a. It is formed in a donut shape so as to be symmetrical.

In Reference Example 1 , as shown in the plan view of the main part of FIG. 5, the through hole 22c formed on the outer peripheral part 15q of the lower electrode layer 15 is divided into four or more around the through hole 22a, The through holes 22a are formed at equal intervals around the center.

In the manufacturing example, a silicon nitride (SiN _x ) film having a film thickness of 300 nm was formed by a sputtering method so as to cover the upper surface and side surfaces of the capacitor structure, thereby forming the inorganic insulating protective film 20. Next, a photosensitive resin material is applied onto the SiN _X film of the insulating protective film 20 by spin coating, and after drying, curing is performed through an exposure and development process, and the first organic protective film having the through holes 22a and 22b. As a result, a polyimide film having a thickness of 2 μm was obtained.

  (4) Next, as shown in FIG. 1D, the portion of the insulating protective film 20 exposed on the bottoms of the through holes 22a and 22b of the first organic protective film 22 is removed, The portions 17s and 15s of the upper electrode layer 17 and the lower electrode layer 15 are exposed.

In the manufacturing example, the SiN _X film of the insulating protective film 20 is formed through the through holes 22a and 22b as shown by the arrow 23 using CHF ₃ gas using the polyimide film which is the first organic protective film 22 as a mask. Dry etching is performed to expose portions 17 s and 15 s of the Pt films of the upper electrode layer 17 and the lower electrode layer 15.

  (5) Next, as shown in FIG. 2 (e), electrode films 30a and 30b for embedding through-holes for extracting upper and lower electrodes are formed. At this time, as shown in the plan view of the main part of FIG. 6, when viewed from the stacking direction, the electrode film 30b connected to the lower electrode layer 15 is formed in a donut shape around the electrode film 30a connected to the upper electrode layer 17. Formed.

In Reference Example 1 , although not shown, when viewed from the stacking direction, four or more electrode films connected to the lower electrode layer 15b are equally spaced around the electrode film connected to the upper electrode layer 17. (For example, every 90 degrees).

  In the manufacturing example, Ti (film thickness 100 nm) and Cu (film thickness 2000 nm) were sequentially formed by a sputtering method. Next, a resist mask was formed by photolithography, and the Cu / Ti structure exposed on the surface was etched by ion milling to form embedded electrode films 30a and 30b made of Cu / Ti.

  (6) Next, as shown in FIG. 2F, a second-layer organic protective film 24 is formed. At this time, as shown in the plan view of the main part of FIG. 7, the second organic protective film 24 has a through hole 24a in which a part 30s of the extraction electrode film 30a connected to the upper electrode layer 17 is exposed, A half-moon-shaped through-hole 24b in which a part 30t of the extraction electrode film 30b connected to the lower electrode layer 15 is exposed is formed.

  In the production example, a photosensitive resin material is applied by spin coating, dried, cured through an exposure and development process, and a 2 μm-thick polyimide film as the second organic protective film 24 having the through holes 24a and 24b. A membrane was obtained.

  (7) Next, as shown in FIG. 2G, lead electrode films 32 and 34 for the upper and lower electrodes are formed. At this time, as shown in the plan view of FIG. 8, the electrode films 32 and 34 are formed so as to be connected to the exposed surfaces 30s and 30t of the electrode films 30a and 30b, respectively.

  In the manufacturing example, Ti (film thickness 100 nm) and Cu (film thickness 2000 nm) were sequentially formed by a sputtering method. Next, a resist mask was formed by photolithography, and the Cu / Ti structure exposed on the surface was removed by ion milling to form extraction electrode films 32 and 34 made of Cu / Ti.

  (8) Next, as shown in FIG. 2H, a third-layer organic protective film 26 is formed. In the third organic protective film 26, through holes 26a and 26b are formed in which parts 32s and 34s of the upper and lower electrode lead electrode films 32 and 34 are exposed as external electrodes.

  In the production example, a photosensitive resin material was applied by spin coating, dried, and then cured through an exposure and development process, and a polyimide film having a thickness of 2 μm was obtained as the organic protective film 26 having through holes 26a and 26b. .

  The variable capacitor 10 manufactured through the above steps is mounted on a circuit board or the like, for example, with external terminals such as solder balls and metal bumps formed on the external electrodes 32s and 34s.

The variable capacitor 10a of the <Reference Example 2> Example 2 is described with reference to FIGS. 9 to 16. 9 and 10 are cross-sectional views showing the manufacturing process. FIGS. 11-16 is a principal part top view in the middle of manufacture. 9 and 10 are cross-sectional views taken along the line BB in FIGS. 11 to 16.

First, an outline of the variable capacitor 10a of Reference Example 2 will be described. The variable capacitor 10a of the reference example 2 is configured in substantially the same manner as the variable capacitor 10 of the first embodiment.

  That is, as shown in the cross-sectional view of FIG. 10H, the substrate 12 has a capacitor structure in which the dielectric layer 16x is sandwiched between the upper electrode layer 17x and the lower electrode layer 15x, and the upper electrode layer The 17x and the lower electrode layer 15x are electrically connected to the external electrodes 32t and 34t via extraction electrodes, respectively.

Unlike the variable capacitor 10 of the first embodiment, the variable capacitor 10a of the reference example 2 is divided into a plurality of capacitance generators 18x.

  That is, when viewed from the stacking direction, the upper electrode layer 17x and the dielectric layer 16x are divided into four as shown in the plan view of the main part of FIG. The lower electrode layer 15x includes a central portion 15u where the upper electrode layer 17x and the lower electrode layer 15x face each other through the dielectric layer 16x and the four capacitance generating portions 18x, and an outer peripheral portion 15v outside the central portion 15u. And have. The outer peripheral portion 15v is a portion of the lower electrode layer 15x excluding the central portion 15u. When viewed from the respective central portions 15u, the outer peripheral portion 15v continuously surrounds the periphery of each central portion 15u over the entire periphery.

  The outer electrode portion 15v of the lower electrode layer 15x is formed with a plurality of connection surfaces with the extraction electrode connecting the lower electrode layer 15x and the external electrode. The surfaces and the central portions 15u overlapping the capacity generating portions 18x are alternately arranged in a staggered manner.

  In this way, by arranging the connection surface connecting the lower electrode layer and the extraction electrode and the capacity generation section alternately in a lattice or zigzag pattern, the relative ratio between the capacity generation section and the external electrode is increased. The current path in the lower electrode layer 15 having a high resistance is increased to disperse the current, the conduction loss is reduced, the ESR can be reduced, and the loss in the high frequency band can be reduced.

Next, a manufacturing process and a manufacturing example of the variable capacitor 10a of Reference Example 2 will be described.

  (1) First, as shown in FIG. 9A, the adhesion layer 14, the lower electrode layer 15, the dielectric layer 16, and the upper electrode layer 17 are laminated on the substrate 12.

In the production example, a Ba _0.7 Sr _0.3 TiO ₃ (BST) thin film is formed as an adhesion layer 14 on a SiO ₂ / Si substrate 12 having a SiO ₂ film formed on the surface by a chemical solution deposition (CSD) method. Formed. Specifically, a BST raw material solution having a stoichiometric composition was applied onto the SiO ₂ film of the substrate 12, dried, and crystallized by a heat treatment at 650 ° C. for 30 minutes to obtain a BST thin film. Next, a 300-nm-thick Pt film was formed on the BST thin film of the adhesion layer 14 by sputtering to form the lower electrode layer 15. Next, a BST thin film was formed as the dielectric layer 16 on the lower electrode layer 15 by the CSD method in the same manner as the BST thin film of the adhesion layer 14. That is, the raw material solution was applied on the Pt film of the lower electrode layer 15, dried at 300 to 400 ° C., and crystallized by heat treatment at 650 ° C. for 30 minutes to obtain a BST thin film. Next, a 300 nm-thickness Pt film was formed on the BST thin film of the dielectric layer 16 by a sputtering method to form the upper electrode layer 17.

  (2) Next, as shown in FIG. 9B, the layers 14 to 17 are patterned to form a plurality of capacitance generating portions 18x. At this time, as shown in the plan view of FIG. 11, when viewed from the stacking direction, the lower electrode layer 15x is formed so as to include the entire upper electrode layer 17x divided into a plurality, and the upper electrode layer divided into a plurality of parts. Each 17x is surrounded over the entire circumference.

  In the manufacturing example, after forming a resist mask, the upper electrode layer 17x, the dielectric layer 16x therebelow, and the lower electrode layer 15x were sequentially dry-etched by ion milling. This is a capacitor structure. Next, the above capacitor structure was heat-treated at 800 ° C. for 30 minutes.

  (3) Next, as shown in FIG. 9C, an insulating protective film 20v and a first organic protective film 22v are formed. At this time, in the first organic protective film 22v, the through hole 22x is formed on the upper electrode layer 17x, and the through hole 22y is formed on the outer region of the lower electrode layer 15x.

  At this time, as shown in the plan view of the main part of FIG. 12, the through holes 22x and the through holes 22y are alternately formed in a staggered pattern.

In Reference Example 3 , instead of FIG. 12, a plurality of through-holes 22x and one through-hole 22z are formed as shown in the plan view of the main part of FIG. 13, and the periphery of each through-hole 22x is a through-hole 22z. Surrounded.

In the manufacturing example, a 300 nm-thickness silicon nitride (SiN _x ) film was formed by sputtering so as to cover the upper surface and side surfaces of the capacitor structure, thereby forming the inorganic insulating protective film 20v. Next, a photosensitive resin material is applied onto the SiN _X film of the insulating protective film 20 by spin coating, and after drying, curing is performed through an exposure and development process, and the first organic protective film having the through holes 22x and 22y. A polyimide film having a thickness of 2 μm was obtained as 22v.

  (4) Next, as shown in FIG. 9 (d), the portion of the insulating protective film 20v exposed on the bottom surfaces of the through holes 22x and 22y of the first organic protective film 22v is removed, and the lower portion of the insulating protective film 20v is removed. Parts 17t and 15t of the upper electrode layer 17x and the lower electrode layer 15x are exposed.

In the manufacturing example, using the polyimide film which is the first organic protective film 22v as a mask, the SiN _X film of the insulating protective film 20v is formed through the through holes 22x and 22y using CHF ₃ gas as shown by an arrow 23a. Dry etching is performed to expose portions 17t and 15t of the Pt film of the upper electrode layer 17x and the lower electrode layer 15x on the bottom surfaces of the through holes 22x and 22z of the organic protective film 22v.

  (5) Next, as shown in FIG. 10 (e), upper and lower electrode lead-through through-hole filling electrode films 31a and 31b are formed. At this time, as shown in the plan view of FIG. 14, the electrode film 31b connected to the lower electrode layer 15x is formed so as to surround the electrode film 31a connected to the upper electrode layer 17x.

  In the manufacturing example, Ti (film thickness 100 nm) and Cu (film thickness 2000 nm) were sequentially formed by a sputtering method. Next, a resist mask was formed by photolithography, and a portion of the Cu / Ti structure exposed on the surface was etched by ion milling to form a buried wiring film made of Cu / Ti.

  (6) Next, as shown in FIG. 10F, a second organic protective film 24v is formed. At this time, as shown in the plan view of FIG. 15, the second organic protective film 24 has one through hole 24y in which a part 31t of the lower electrode lead electrode film 31b is exposed and a part of the upper electrode film 31a. Four through holes 24x exposing 31s are formed.

  In the production example, a photosensitive resin raw material is applied by spin coating, dried, cured through exposure and development steps, and a 2 μm-thick polyimide film is formed as a second organic protective film 24v having through holes 24x and 24y. A membrane was obtained.

  (7) Next, as shown in FIG. 10G, lead electrode films 32a and 34a for the upper and lower electrodes are formed. At this time, as shown in the plan view of FIG. 16, the electrode films 32a and 34a are formed so as to be connected to the exposed surfaces of the electrode films 31a and 31b, respectively.

  In the manufacturing example, Ti (film thickness 100 nm) and Cu (film thickness 2000 nm) were sequentially formed by a sputtering method. Next, a resist mask was formed by photolithography, and the Cu / Ti structure exposed on the surface was removed by ion milling to form lead electrode films 31a and 31b made of Cu / Ti.

  (7) Next, as shown in FIG. 10 (h), a third organic protective film 26 having through holes 26x and 26y through which parts 32t and 34t of the upper and lower electrode lead electrode films 31a and 31b are exposed is formed. . Of the upper and lower electrode lead electrode films, portions 32s and 34s exposed from the through holes 26x and 26y serve as external electrodes.

  In the production example, a photosensitive resin raw material was applied by spin coating, dried, and then cured through an exposure and development process to obtain a polyimide film having a thickness of 2 μm.

  The variable capacitor 10a manufactured through the above steps is mounted on a circuit board or the like, for example, with external terminals such as solder balls and metal bumps formed on the external electrodes 32t and 34t.

  <Comparative Example> A manufacturing process and a manufacturing example of a variable capacitor of a comparative example having a conventional structure will be described with reference to FIGS. 17 and 18 are cross-sectional views showing the manufacturing process. FIG. 19 is a plan view of an essential part during manufacture. 17 and 18 are cross-sectional views taken along line XX in FIG.

  The variable capacitor of the comparative example is manufactured in substantially the same manner as in Example 1.

  (1) First, as shown in FIG. 17A, the adhesion layer 14, the lower electrode layer 15, the dielectric layer 16, and the upper electrode layer 17 are laminated on the substrate 12.

In the manufacturing example, a Ba _0.7 Sr _0.3 TiO ₃ (BST) thin film is formed as the adhesion layer 14 on the SiO ₂ / Si substrate 12 having a SiO ₂ film formed on the surface by a chemical solution deposition (CSD) method. did. Specifically, a BSR raw material solution having a stoichiometric composition was applied onto the SiO ₂ film of the substrate 12, dried, and crystallized by heat treatment at 650 ° C. for 30 minutes to obtain a BST thin film. Next, a 300-nm-thick Pt film was formed on the BST thin film of the adhesion layer 14 by sputtering to form the lower electrode layer 15. Next, a BST thin film was formed as a dielectric layer 16 on the lower electrode layer 15 by the CSD method in the same manner as the BST thin film of the adhesion layer 14. That is, the raw material solution was applied on the Pt film of the lower electrode layer 15, dried, and crystallized by heat treatment at 650 ° C. for 30 minutes to obtain a BST thin film. Next, a Pt film having a thickness of 300 nm was formed on the BST thin film by a sputtering method to form the upper electrode layer 17.

  (2) Next, as shown in FIG. At this time, as shown in the plan view of the main part of FIG. 19A, when viewed from the stacking direction, the lower electrode layer 15 is larger than the upper electrode layer 17 and surrounds the upper electrode layer 17 over the entire circumference.

  In the manufacturing example, after forming a resist mask by a photolithography method, the upper electrode layer 17, the dielectric layer 16 therebelow, and the lower electrode layer 15 were sequentially dry etched by an ion milling method. This is a capacitor structure. This capacitor structure was heat-treated at 800 ° C. for 30 minutes.

  (3) Next, as shown in FIG. 17C, an inorganic insulating protective film 20k and a first organic protective film 22k are formed. At this time, in the first organic protective film 22k, a through hole 22p is formed on the upper electrode layer 17, and a through hole 22q is formed on the lower electrode layer 15. At this time, as shown in the plan view of the main part of FIG. 19B, the through hole 22q is formed in a substantially C shape so as to surround one side of the through hole 22p.

In the manufacturing example, a silicon nitride (SiN _x ) film having a thickness of 400 nm was formed by sputtering to cover the upper surface and side surfaces of the capacitor structure, thereby forming the insulating protective film 20.

Next, a photosensitive resin raw material is applied onto the SiN _X film of the insulating protective film 20 by spin coating, dried, cured through exposure and development steps, and a first organic protective film having through holes 22p and 22q. As a result, a polyimide film having a thickness of 2 μm was obtained.

  (4) Next, as shown in FIG. 18 (d), the portion of the insulating protective film 20k exposed on the bottom surfaces of the through holes 22p and 22q of the first organic protective film 22k is removed, and the underlying layer is removed. The portions 17r and 15r of the upper electrode layer 17 and the lower electrode layer 15 are exposed.

In the manufacturing example, SiN _X of the insulating protective film 20 is dry-etched as indicated by an arrow 23 using CHF ₃ gas using the polyimide film of the first organic protective film 22k as a mask, and the upper electrode layer 17 and the lower electrode layer 17 The portions 17r and 15r of the Pt film of the electrode layer 15 were exposed.

  (5) Next, as shown in FIG. 18E, lead electrode films 32p and 34p from the upper electrode layer 17 and the lower electrode layer 15 are formed. At this time, as shown in the plan view of FIG. 19C, the electrode films 32p and 34p are connected to the entire exposed surfaces 17r and 15r of the electrode layers 17 and 15, respectively, and on the first organic protective film 22k. Then, they are formed large in opposite directions.

  In the manufacturing example, Ti (film thickness 100 nm) and Cu (film thickness 2000 nm) were sequentially formed by a sputtering method. Next, a resist mask was formed by photolithography, and portions of the Cu / Ti structure exposed on the surface were removed by ion milling to form lead electrodes 32p and 34p made of Cu / Ti.

  (6) Next, as shown in FIG. 18F, a second-layer organic protective film 28 is formed. In the second organic protective film 28, through holes 28a and 28b are formed through which parts of the extraction electrode films 32p and 34p are exposed.

  In the production example, a photosensitive resin raw material is applied by spin coating, dried, cured through an exposure and development process, and a 2 μm-thick polyimide film as the second organic protective film 28 having the through holes 28a and 28b. A membrane was obtained.

<Examination> ESR was calculated by the finite element method for each of the production examples of Example 1, Reference Example 2, and Comparative Example, in which the total area of the upper electrode layer 17 was the same as 225 μm ² . The calculation conditions are as follows.
Element size 0.5 × 0.2mm
Mesh size 10μm
Calculation frequency 2GHz
Measurement of ESR Calculated at both ends in the longitudinal direction of the element Distance between extraction electrodes Distance between 30a and 30b in FIG. 2 (h) Length in the longitudinal direction of 34 Calculated by making the length in the vertical direction of 34 constant in each condition.

The calculation results are shown in Table 1 below.

  From Table 1, the following can be understood.

The structure of Example 1 in which the shape of the connection surface between the lower electrode layer and the extraction electrode is a donut shape, and a reference example in which four connection surfaces between the lower electrode layer and the extraction electrode are formed at equal intervals around the capacitance generating portion In any of the structures of 2 , the ESR can be reduced as compared with the comparative example in which the connection surface between the lower electrode layer and the extraction electrode is formed only at one location on one side of the capacitance generating portion.

Further, the reference example 2 in which the upper electrode and the capacity generation part are divided into a plurality of parts can further reduce the ESR as compared with the example 1 in which the upper electrode and the capacity generation part are only one place. This is because the current path is increased and the current is more dispersed in the reference example 2 than in the first embodiment.

  <Summary> By forming the lower electrode lead portion into a donut shape with the upper electrode as the center, or by dividing the capacitance generation portion into a plurality of portions and arranging the upper and lower electrode lead portions in a staggered manner, the capacitance generation portion -Disperse the current by increasing the current path in the lower electrode having a high specific resistance between the lower electrode lead portions. As a result, ESR can be reduced, and loss in the high frequency band can be reduced. By dividing the capacitance generating portion into a plurality of portions and pulling out the leading portions of the upper and lower electrodes in a lattice shape or a staggered shape, a further low loss element can be provided.

  Further, an element having the same conductive loss can be obtained with a thinner lower electrode film thickness.

  The present invention is not limited to the above embodiment, and can be implemented with various modifications.

  For example, the present invention can be applied to various types of capacitors other than variable capacitors.

  In addition, when the lower electrode lead-out portion is divided, it may be divided into two or more places and arranged evenly. For example, when dividing into two places, each lower electrode lead-out part may be formed in a substantially C shape. In the case of dividing into three places, the lower electrode lead portions may be arranged every 120 degrees.

It is sectional drawing which shows the manufacturing process of a variable capacitor. Example 1 It is sectional drawing which shows the manufacturing process of a variable capacitor. Example 1 It is a principal part top view in the middle of manufacture of a variable capacitor. Example 1 It is a principal part top view in the middle of manufacture of a variable capacitor. Example 1 It is a principal part top view in the middle of manufacture of a variable capacitor. ( Reference Example 1 ) It is a principal part top view in the middle of manufacture of a variable capacitor. Example 1 It is a principal part top view in the middle of manufacture of a variable capacitor. Example 1 It is a principal part top view in the middle of manufacture of a variable capacitor. Example 1 It is sectional drawing which shows the manufacturing process of a variable capacitor. ( Reference Example 2 ) It is sectional drawing which shows the manufacturing process of a variable capacitor. ( Reference Example 2 ) It is a principal part top view in the middle of manufacture of a variable capacitor. ( Reference Example 2 ) It is a principal part top view in the middle of manufacture of a variable capacitor. ( Reference Example 2 ) It is a principal part top view in the middle of manufacture of a variable capacitor. ( Reference Example 2 ) It is a principal part top view in the middle of manufacture of a variable capacitor. ( Reference Example 2 ) It is a principal part top view in the middle of manufacture of a variable capacitor. ( Reference Example 3 ) It is a principal part top view in the middle of manufacture of a variable capacitor. ( Reference Example 2 ) It is sectional drawing which shows the manufacturing process of a variable capacitor. (Comparative example) It is sectional drawing which shows the manufacturing process of a variable capacitor. (Comparative example) It is a principal part top view in the middle of manufacture of a variable capacitor. (Comparative example) It is sectional drawing of a variable capacitor. (Conventional example)

Explanation of symbols

12 Substrate 15, 15x Lower electrode layer 15p Center part 15q Outer part 15s, 15t Connection surface 15u Center part 15v Outer part 16, 16x Dielectric layer 17, 17x Upper electrode layer 18, 18z Capacitance generating part 20 Insulating protective film 22, 22v Organic protective film 24, 24v Organic protective film 26 Organic protective film 30a Electrode film (extraction electrode)
30b Electrode film ( one extraction electrode , first electrode film )
31a, 31b Electrode film (extraction electrode)
32, 32a Electrode film (extraction electrode)
32s, 32t External electrode 34 electrode film (one extraction electrode, second electrode film)
34a Electrode film (extraction electrode)
34s, 34t External electrode

Claims (1)

A pair of electrode layers;
A dielectric layer disposed between the pair of electrode layers;
A pair of lead electrodes respectively connected to the electrode layers;
A capacitor with
One of the electrode layers includes a central portion where the pair of electrode layers overlaps a capacitance generating portion opposed to each other through the dielectric layer when viewed from the stacking direction of the electrode layer and the dielectric layer, and the central portion An outer peripheral portion extending outward from the outer periphery and continuously surrounding the central portion over the entire circumference,
One of the lead electrodes is connected to the dielectric layer side at one location with respect to the one electrode layer of the outer peripheral portion of the one electrode layer, and the connection surface is continuous over the entire circumference of the central portion. enclose take in,
The one extraction electrode is
A first electrode film connected to the one electrode layer at the connection surface and formed in a donut shape;
A capacitor comprising: a second electrode film connected in a half-moon shape to an end surface opposite to the connection surface of the first electrode film .

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