JP5367796B2 - Silicon block inspection method and manufacturing method, silicon wafer manufacturing method, solar cell element manufacturing method, and solar cell module manufacturing method - Google Patents

Description

  The present invention relates to a silicon block inspection method, a silicon block manufacturing method and a silicon block manufactured through the inspection method, a silicon wafer manufacturing method and a silicon wafer manufactured through the inspection method, and the silicon wafer. The present invention relates to a manufactured solar cell element and a solar cell module.

  The use of natural energy is attracting attention as an alternative to oil due to environmental problems. Solar cells do not require large facilities and may not generate noise during operation, and have been particularly actively introduced in Japan and Europe. Among solar cells, those made of compound semiconductors such as cadmium tellurium have appeared, but silicon solar cells using crystalline silicon as a substrate are considered from the standpoints of the safety of the material itself, past achievements, and cost performance. Occupies a large share. Crystalline silicon substrates are further classified into single crystal type and polycrystalline type.

  Most of the silicon used in silicon solar cells is cut into a silicon block of a certain size, which is obtained by solidifying molten silicon in the crucible in one direction from the bottom side, and the block is thinned with a processing machine such as a multi-wire saw. A silicon wafer obtained by slicing is used. Most of the silicon wafers manufactured by such a method are polycrystalline, but some of the silicon wafers are partially single crystal by using a single crystal seed crystal. P-type crystalline silicon wafers doped with B (boron) are widely used for solar cells.

  On the other hand, as described in Non-Patent Document 1, it is known that a solar cell produced using a B-doped silicon wafer is deteriorated by light. This is presumably because B—O pairs that become traps of electrons that are minority carriers are generated by light irradiation. Therefore, the photodegradation rate is a function of B concentration and O (oxygen) concentration.

  Therefore, in order to suppress the photodegradation rate of a solar cell manufactured from a crystalline silicon wafer below a specified value, it is necessary to evaluate the B concentration and O concentration in the wafer. The B concentration can be easily evaluated from impurity analysis such as ICP and simple resistance measurement, but the oxygen concentration can be measured in the wafer state after the slice is completed, or it is measured near the block or from the block to the thin plate. A sample (approx. 2 mm thick is appropriate) was cut out, polished, etched, etc., and then evaluated using a Fourier transform infrared spectrometer (FT-IR) or the like.

J. et al. Schmidt and A.M. Cuevas, J. et al. Appl. Phys. 86, 3175 (1999)

  However, the following problems occur in the oxygen concentration measurement as described above. If the oxygen concentration is measured in a wafer state after slicing, and the oxygen concentration is higher than a specified value, the cost of processing the slice and the cost of silicon material that has become a kerf loss will be a significant cost increase factor. In addition, when preparing and evaluating a thin plate sample, it takes time to produce the sample, which again increases the cost.

  The present invention has been made to avoid the above-described problems, and an object of the present invention is to provide a silicon block inspection method capable of simply evaluating the oxygen concentration in silicon in a silicon block state. .

  As a result of intensive studies, the inventor has found that there is a correlation between the minimum value on the bottom side of the minority carrier lifetime of the silicon block and the oxygen concentration at the height position, leading to the present invention.

  The present invention is an inspection method of a silicon block cut out from a polycrystalline silicon ingot formed by unidirectional solidification, in a lifetime measuring step for measuring the lifetime of minority carriers in the silicon block, and in the lifetime measuring step An oxygen concentration calculating step for calculating the oxygen concentration of a silicon block from the measured lifetime is provided.

  In one embodiment of the inspection method of the present invention, the lifetime measurement step is a step of measuring the minority carrier lifetime at a plurality of positions in the height direction of the silicon block, and the oxygen concentration calculation step is the height direction. The step of calculating the oxygen concentration at the reference position that takes the minimum value from the minimum value of the lifetime excluding the bottommost portion of the lifetime measured at the bottom half position divided into two.

  In the inspection method of the present invention, the oxygen concentration attenuation characteristics in the height direction from the bottom portion to the top portion of the silicon block, which are derived in advance according to the manufacturing conditions of the polycrystalline silicon ingot, are calculated in the oxygen concentration calculation step. It is preferable to further include a non-use area determination step of determining a non-use area of the silicon block using the oxygen concentration at the reference position.

  The present invention also includes a step of preparing a silicon block, and a step of inspecting the silicon block by the above-described silicon block inspection method and cutting away the unused region determined in the unused region determination step. A method of manufacturing a block and a silicon block manufactured by the manufacturing method are provided.

  The present invention also provides a step of preparing a silicon block, a step of inspecting the silicon block by the above-described silicon block inspection method, cutting away the unused region determined in the unused region determination step, and the unused region. A silicon wafer manufactured by slicing the silicon block cut out of the silicon block, and a silicon wafer manufactured by the manufacturing method.

  Furthermore, the present invention provides a solar cell element provided with the above-described silicon wafer, and a solar cell module in which a plurality of such solar cell elements are electrically connected.

  According to the silicon block inspection method of the present invention, the oxygen concentration can be calculated by a simple method, the silicon block and the silicon wafer having an oxygen concentration equal to or lower than a predetermined value, and a solar cell element comprising such a silicon wafer And a solar cell module can be provided at low cost.

It is a figure which shows the relationship between the minimum value of the lifetime in the bottom side half in a silicon block, and the oxygen concentration in the height. (A) It is a graph which shows the measurement result of the lifetime with respect to the position of the height direction of the silicon block A, (B) It is a graph which shows the measurement result of the lifetime with respect to the position of the height direction of the silicon block B.

[Inspection method of silicon block]
The silicon block inspection method of the present invention includes a lifetime measurement step for measuring the lifetime of minority carriers in the silicon block, and an oxygen concentration calculation step for calculating the oxygen concentration of the silicon block from the lifetime measured in the lifetime measurement step. ,including. According to the present invention, the oxygen concentration can be calculated by a simple method of lifetime measurement without directly measuring the oxygen concentration.

(Silicon block forming process)
One mode of the silicon block forming process will be described. First, the silicon raw material is charged into the melting crucible, and the silicon raw material in the melting crucible is melted by heating means. A silicon melt is poured into a mold from a certain pouring port. After pouring, the silicon in the mold is cooled from the bottom part and solidified in one direction in the height direction from the bottom part to the top part, and then gradually cooled while controlling the temperature to a temperature that can be taken out of the furnace. Take it out of the furnace. In this way, a rectangular polycrystalline silicon ingot is formed.

  Then, a rectangular polycrystalline silicon block is cut out from the polycrystalline silicon ingot using a band saw or the like. You may perform finishing processes, such as dimensioning and an etching, with respect to the cut-out silicon block as needed.

(Lifetime measurement process)
The lifetime in this specification is the lifetime of minority carriers evaluated by the μPCD method (microwave photoconductivity decay method). The lifetime measuring method in this specification performs measurement using a lifetime measuring device WT-2000 manufactured by Semilab at a plurality of positions in the height direction of the side surface of the silicon block. Measurement is performed by irradiating a laser beam at a laser wavelength of 904 nm, a pulse width of 200 ns, a laser spot of 1 mm ² , a laser output of 1.2 × 10 ¹³ (photons), a TimeRange of 0.1 ms, and a sensitivity of 100 mV. One line may be measured, but in order to improve accuracy, the silicon block is scanned in the width direction at predetermined intervals, and the average value of a plurality of measured values at the same height position is calculated as the life at that height. Time. The predetermined interval for scanning and the number of measurement values can be appropriately determined according to the size of the silicon block. For example, a silicon block with a width of 156 mm is scanned at 20 mm intervals in the width direction and measured with 8 lines, and the average value of the measured values with 8 lines at a certain height is defined as the lifetime at that height. be able to. The measurement interval of the lifetime in the height direction in each line is not limited, but can be set to 2 mm, for example.

  Regarding the measurement of lifetime, since there is no standard sample, calibration differs for each apparatus. Therefore, since the vertical axis of the graph in FIG. 1 varies depending on the calibration, it is necessary to prepare for each device in advance.

(Oxygen concentration calculation process)
Based on the relationship between the lifetime of the silicon block and the oxygen concentration, the oxygen concentration of the silicon block is calculated from the lifetime measured in the lifetime measurement step. The oxygen concentration of the silicon block is preferably calculated as the oxygen concentration at each height position. The calculated oxygen concentration of the silicon block is useful for evaluating the silicon block. For example, when a silicon wafer is manufactured by slicing a silicon block, a region where the oxygen concentration is within a predetermined range is selected based on the calculated oxygen concentration, and the region is used, so that the oxygen concentration is not directly measured. However, a silicon wafer having an oxygen concentration within a predetermined range can be produced. Hereinafter, an example of the relationship between the lifetime and the oxygen concentration, and a non-use region determination step performed using the relationship will be described.

<Example of relationship between lifetime and oxygen concentration>
Lifetime measured at a plurality of height positions on the side surface of the silicon block, where the bottom half of the measured value of the bottom half of the silicon block divided in the height direction is the position at the height 0 (the bottom part) ) Except the measured value (hereinafter also simply referred to as “bottom-side lifetime minimum value”) and the height at which the lifetime takes the minimum value (also referred to as “reference position” in this specification) It has been found that there is a positive correlation between the oxygen concentration and the oxygen concentration in FIG.

  FIG. 1 shows the measurement of the side lifetime of 10 silicon block samples, and then slicing the silicon block into a plurality of wafers and measuring the oxygen concentration of the wafer whose height was the minimum value. It is a graph obtained by plotting measurement data. The oxygen concentration was measured by an infrared absorption method using a Fourier transform infrared spectrometer (FT-IR).

  In FIG. 1, the vertical axis indicates the minimum value of the lifetime in the bottom half of the silicon block, and the horizontal axis indicates the oxygen concentration at a height at which the lifetime is the minimum value. In order to obtain the minimum value of the lifetime of the bottom half, it is preferable that the lifetime is measured at a pitch of 2 mm at a position in the height direction at least on the bottom side in the lifetime measurement step. When determining the minimum value of the lifetime of the bottom half, the reason for excluding the measured value at the bottom is that the data at the sample end of the lifetime is sensitive to slight variations in how the incident beam hits. This is because they tend to be unstable.

The oxygen concentration can also be measured by an inert gas melting method or SIMS (secondary ion mass spectrometry), but FIG. 1 shows the oxygen concentration measured by the infrared absorption method using FT-IR. The value of is used. In this specification, the oxygen concentration value measured by FT-IR is a value measured by Nicolet 6700FT-IR manufactured by Thermo Fisher Scientific, 4 cm ⁻¹ for wave number decomposition, and 128 scans.

  From the above, it can be seen that the oxygen concentration at the height of the silicon block to be inspected can be derived from the minimum value of the lifetime of the bottom half of the silicon block by using the relationship shown by the curve 10 in FIG. .

  As shown in FIG. 1, the reason why the lifetime data of minority carriers increases as the oxygen concentration increases is not necessarily clear. However, the lifetime killer (iron This is thought to be because the impurity concentration in the silicon crystal is lowered by gettering (trapping) such as oxygen precipitation.

<Example of oxygen concentration calculation method at each position in the height direction>
In the silicon block cut out from the polycrystalline silicon ingot, the oxygen concentration attenuates in the height direction from the bottom portion to the top portion. Such attenuation follows a specific attenuation characteristic according to the manufacturing conditions of the polycrystalline silicon ingot. In carrying out the inspection method of the present invention, it is preferable that this attenuation characteristic is derived in advance.

  The attenuation characteristic of the oxygen concentration in the height direction depends on the manufacturing conditions of the polycrystalline silicon ingot, that is, the apparatus and growth conditions used when manufacturing the polycrystalline silicon ingot. The damping characteristics may vary depending on the vacuum leak of the apparatus and the temperature at which the silicon raw material is melted. If the oxygen concentration at a certain height is calculated based on the attenuation characteristic of the oxygen concentration in the height direction derived in advance, the oxygen concentration at other heights can also be calculated. That is, the oxygen concentration in the entire silicon block can be calculated from the oxygen concentration at the reference position where the lifetime becomes the minimum value.

(Non-use area determination process)
In the inspection method of the present invention, the unused area determination step can be performed after the oxygen concentration calculation step. In the case of performing the unused area determination step, in one embodiment of the present invention, the lifetime of the side surface of the silicon block is measured to determine the minimum value of the lifetime on the bottom side, and the minimum value of the lifetime is shown in FIG. By applying the relationship to the curve 10 and calculating the oxygen concentration at that height, the oxygen concentration is applied to the attenuation characteristic of the oxygen concentration in the height direction derived in advance, and the height at which the oxygen concentration becomes a predetermined concentration is calculated. decide. For example, a region where the oxygen concentration is lower than a predetermined concentration can be used, and a region where the oxygen concentration is higher than a predetermined concentration can be used. The predetermined concentration can be appropriately determined according to the intended use of the silicon block, desired performance, and the like. The unused area of the silicon block determined in this way is preferably excised from the silicon block.

  As another embodiment of the inspection method of the present invention, when the minimum value of the lifetime based on the measurement in the lifetime measurement step is a predetermined value or more, it is determined that the oxygen concentration is high in the oxygen concentration calculation step, There is an embodiment in which a detailed evaluation is performed only for a silicon block determined to have a high oxygen concentration. Here, the predetermined value of the lifetime can be set to 2 μm, for example. In this embodiment, rough screening can be performed using the inspection method of the present invention.

[Silicon block]
The silicon block of the present invention includes a step of preparing a silicon block, and a step of inspecting the silicon block by the above-described inspection method, and preferably cutting away the unused area determined in the unused area determining step. Manufactured by.

  With such a manufacturing method, it is possible to adjust a silicon block consisting only of a region where the oxygen concentration is less than a predetermined concentration without directly measuring the oxygen concentration. Therefore, since it is not necessary to incur a cost required for directly measuring the oxygen concentration, the silicon block and a silicon wafer produced by slicing the silicon block are useful.

[Silicon wafer]
The silicon wafer of the present invention includes a step of preparing a silicon block, and a step of inspecting the silicon block by the above-described inspection method, and preferably cutting away the unused area determined in the unused area determining step. The silicon block manufactured by the above method is used and sliced with a multi-wire saw or the like.

[Solar cell element]
After forming a pn junction using the silicon wafer of the present invention, a solar cell element is formed by attaching an antireflection film and an electrode. As described above, the solar cell element of the present invention is useful for reducing the cost because it can prepare and manufacture a silicon wafer that satisfies the specifications without incurring additional cost for the oxygen concentration test.

[Solar cell module]
A solar cell module is formed by electrically connecting a plurality of the solar cell elements of the present invention. As described above, the solar cell module of the present invention can be prepared and manufactured with a silicon wafer that satisfies the specifications without incurring additional costs for the oxygen concentration test, and thus is useful for reducing the cost.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated in more detail, this invention is not limited to these Examples. In the following examples and comparative examples, a silicon wafer is produced from a silicon block, and the oxygen concentration specification of the silicon wafer is less than 10 ppma.

[Example 1]
A silicon block is cut out using a band saw from a silicon ingot formed by unidirectional solidification in the height direction from the bottom part to the top part, and two rectangular silicon blocks having a height of 20 cm (silicon block A, silicon block B). ) Prepared. In this example, the silicon block was inspected as follows according to the method of the present invention, and the region where the oxygen concentration was less than 10 ppma was used as the silicon block use region in accordance with the specifications of the silicon wafer to be produced.

  The relationship between the position in the height direction of the silicon block formed according to the manufacturing conditions of this example and the oxygen concentration is such that the position in the height direction of the bottom portion is 0 cm, and the position in the height direction is the distance from the bottom portion X (Cm), it was confirmed in advance using a plurality of silicon blocks having the same manufacturing conditions that the oxygen concentration Ox (ppma) at the position X (cm) in the height direction can be well fitted by the following equation (1). . Therefore, the relationship represented by the equation (1) is the oxygen concentration attenuation characteristic of the silicon block of this embodiment.

Ox = oxygen concentration in the bottom part / (X + 0.8) ^0.7 formula (1)
The relationship shown in Expression (1) reflects the property that the oxygen concentration attenuates in the height direction from the bottom portion to the top portion.

For the silicon blocks A and B, the lifetimes of the height positions on the side surfaces were measured. For the measurement, a lifetime measuring device WT-2000 manufactured by Semilab was used. Measured by irradiating a laser beam at a laser wavelength of 904 nm, a pulse width of 200 ns, a laser spot of 1 mm ² , a laser output of 1.2 × 10 ¹³ (photons), a TimeRange of 0.1 ms, and a sensitivity of 100 mV. The average value of the measured values at the position of was taken as the lifetime at that height. The lifetime on the side surface of the silicon block was measured every 2 mm from the bottom position.

  2A and 2B are graphs plotting the measurement results of the silicon blocks A and B, respectively. 2A and 2B, the horizontal axis represents the height of the silicon block, and the vertical axis represents the lifetime at each height. The horizontal axis indicates the height by the distance from the center, the center is 0, a higher position is indicated by plus, and a lower position is indicated by minus. 2A and 2B, the left side from the center is the bottom half of the silicon block, and the right side from the center is the top half of the silicon block.

  From the measurement results of the lifetimes of the silicon blocks A and B, the minimum value excluding the measurement value at the bottom of the lifetime measurement values at the bottom half from the center of the silicon block is 1 at a position of 2 mm in height. 0.6 μs and 2.3 μs at a height of 17 mm. From the minimum value of the lifetime of the bottom half, the oxygen concentration at the height was obtained based on the relationship of the curve 10 shown in FIG. Then, when the position (X) in the height direction that takes the minimum lifetime value and the oxygen concentration Ox at that position are substituted into Equation (1) to calculate the oxygen concentration at the bottom, silicon blocks A and B And 5.1 ppma and 48.0 ppma, respectively. In the silicon block A, the oxygen concentration in the bottom part with the highest oxygen concentration is 5.1 ppma, so that the oxygen concentration is less than 10 ppma in the entire region of the silicon block. The silicon block was sliced with a multi-wire saw to produce a silicon wafer satisfying the oxygen concentration specification.

  For silicon block B, 48.0 ppma, which is the oxygen concentration at the bottom, was substituted into equation (1) to determine the height of the silicon block at which the oxygen concentration was 10 ppma. It was calculated to be a position where the oxygen concentration was 10 ppma. As can be seen from Equation (1), the oxygen concentration is higher than 10 ppma at a position lower than this position. Therefore, an area of 8.6 cm or less in height was excised and used for the production of a silicon wafer. A silicon wafer that satisfies the oxygen concentration specification was manufactured by slicing a silicon block that had been partially cut with a multi-wire saw. Table 1 summarizes the above results for block A and block B.

[Comparative Example 1]
A silicon block is cut out using a band saw from a silicon ingot formed by unidirectional solidification in the height direction from the bottom portion to the top portion in the same manner as in Example 1, and a rectangular silicon block having a height of 20 cm (silicon Block C) was prepared. In this comparative example, the silicon block was inspected as follows, and the region where the oxygen concentration was less than 10 ppma was used as the working region according to the specifications of the silicon wafer to be manufactured.

  In this comparative example, when the silicon block C was cut out, a thin piece for measuring the oxygen concentration parallel to the crystal growth direction was cut out from a position adjacent to the silicon block C of the silicon ingot. In measuring the oxygen concentration, the thickness of the thin piece is ideally about 2 mm. Therefore, in this comparative example, the thickness of the thin piece was cut to 2.5 mm with a band saw, the surface of the thin piece was polished, and then the thickness was reduced to 0. Etching was performed 5 mm to remove the damaged layer on the surface. About the thin piece processed in this way, the interstitial oxygen concentration was measured by FT-IR at a pitch of 5 mm in the same direction as the height direction of the silicon block C from the position corresponding to the bottom part of the silicon block C. The oxygen concentration at the corresponding position of the flake was defined as the oxygen concentration in the height direction of the silicon block C.

  As a result of this measurement, it was found that the oxygen concentration was 10 ppma or more at 25 mm from the bottom, and cutting was necessary. Therefore, a 25 mm region from the bottom of the silicon block C was cut out and used to manufacture a silicon wafer. A silicon wafer that satisfies the oxygen concentration specification was fabricated by slicing the silicon block, which had been partially cut, with a multi-wire saw.

  In this comparative example, in order to cut out a thin piece for measuring the oxygen concentration with a thickness of 2.5 mm, processing was performed with a band saw with a kerf loss of about 3 mm, so the total thickness on the thin piece side and the silicon ingot side where the thin piece was cut out was 6 mm. The silicon was scrapped. In addition, labor and costs were incurred, such as band saw processing, thin piece polishing / etching processing, and FT-IR measurement. Therefore, the silicon wafer manufactured by the manufacturing method of this comparative example, or a solar cell and a solar cell module manufactured using the silicon wafer are manufactured using the silicon wafer manufactured by the manufacturing method of Example 1 or a solar cell manufactured using the silicon wafer. In comparison with the solar cell module, the cost is increased.

[Comparative Example 2]
A silicon block is cut out using a band saw from a silicon ingot formed by unidirectional solidification in the height direction from the bottom portion to the top portion in the same manner as in Example 1, and a rectangular silicon block having a height of 20 cm (silicon Block D) was prepared. In this comparative example, the oxygen concentration is not inspected in the silicon block state, but the oxygen concentration is inspected after the silicon wafer is manufactured. The oxygen concentration is less than 10 ppma, and the oxygen concentration is 10 ppma or more. Were considered defective.

  As a result of slicing the silicon block D with a multi-wire saw and performing FT-IR measurement every 15 wafers from the silicon wafer corresponding to the block bottom part, 90 pieces from the bottom part do not satisfy the oxygen concentration specification. I understood. Therefore, the corresponding 90 wafers were extracted as defective products, and the remaining silicon wafers satisfying the oxygen concentration specification.

  In this comparative example, the slicing process for making 90 wafers from the bottommost part finally processed as defective products, the processing of silicon scrap generated during slicing of 90 wafers processed as defective products, and FT -IR measurement processing effort and cost, and other costs (fixed cost increase due to reduced production of 90 sheets, etc.) were required. Therefore, the silicon wafer manufactured by the manufacturing method of this comparative example, or a solar cell and a solar cell module manufactured using the silicon wafer are manufactured using the silicon wafer manufactured by the manufacturing method of Example 1 or a solar cell manufactured using the silicon wafer. In comparison with the solar cell module, the cost is increased.

  According to the present invention, since a silicon wafer that satisfies the specifications can be manufactured at low cost, the present invention can be suitably used in the solar cell field.

Claims (10)

A method for inspecting a silicon block cut from a polycrystalline silicon ingot formed by unidirectional solidification,
A lifetime measuring step for measuring the lifetime of minority carriers of the silicon block;
An oxygen concentration calculating step of calculating the oxygen concentration of the silicon block based on a relationship in which the lifetime value of minority carriers increases as the oxygen concentration increases from the lifetime measured in the lifetime measuring step. Inspection method of silicon block. The lifetime measurement step is a step of measuring the minority carrier lifetime at a plurality of positions in the height direction of the silicon block,
In the oxygen concentration calculation step, the oxygen concentration at the reference position that takes the minimum value from the minimum value of the lifetime excluding the bottom part of the lifetime measured at the bottom half position divided in the height direction. The silicon block inspection method according to claim 1, comprising a step of calculating A method for inspecting a silicon block cut from a polycrystalline silicon ingot formed by unidirectional solidification,
A lifetime measuring step of measuring the lifetime of minority carriers at a plurality of positions in the height direction of the silicon block;
Of the lifetime measured at the bottom half position divided in the height direction in the lifetime measurement step, from the minimum lifetime value excluding the bottommost portion, the oxygen concentration at the reference position taking the minimum value is determined. A method for inspecting a silicon block, comprising: an oxygen concentration calculating step for calculating. The attenuation characteristic of the oxygen concentration in the height direction from the bottom part to the top part of the silicon block, which is derived in advance according to the manufacturing conditions of the polycrystalline silicon ingot, and the reference position calculated in the oxygen concentration calculation step said oxygen with a concentration, further comprising a non-use area determining step of determining the unused area of the silicon block, the inspection method of the silicon block according to claim 2 or 3. Preparing a silicon block;
A method for manufacturing a silicon block, comprising: inspecting the silicon block by the method for inspecting a silicon block according to claim 4 and cutting away the unused area. A method for manufacturing a silicon block, comprising: inspecting the silicon block by the method for inspecting a silicon block according to any one of claims 1 to 4 and determining a non-use area to be excised. Preparing a silicon block;
Performing the inspection of the silicon block by the inspection method of the silicon block according to claim 4 , and cutting away the unused area;
Slicing the silicon block from which the unused area has been cut off to produce a silicon wafer. The manufacturing method of the silicon wafer which obtains a silicon wafer using the silicon block manufactured by the manufacturing method of Claim 6. The manufacturing method of the solar cell element which obtains a solar cell element using the silicon wafer manufactured by the manufacturing method of Claim 7 or 8. The manufacturing method of the solar cell module which obtains a solar cell module using the solar cell element manufactured by the manufacturing method of Claim 9.

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