JP5364986B2 - Secondary battery protection semiconductor device - Google Patents

Description

  The present invention relates to a secondary battery protecting semiconductor device.

  Li-ion secondary batteries are often used in portable electronic devices. Li-ion secondary batteries have a risk of causing an accident due to deposition of metallic Li when overcharged, and have a problem that the number of repeated charge / discharge cycles deteriorates when overdischarged. For this reason, a protection switch is provided in the charging / discharging path between the secondary battery and the device main body, and this is detected when the battery is overcharged over a predetermined voltage or overdischarged below the predetermined voltage. Is turned off to prevent further overcharge and overdischarge.

  For example, Patent Document 1 discloses a protection circuit that detects overcharge, overdischarge, and overcurrent of a secondary battery. In general, when the battery voltage becomes close to the end voltage at which the discharge operation should be stopped, the voltage margin becomes small and malfunctions due to sudden load fluctuations are likely to occur. Accordingly, it is not necessary to turn off the protection switch immediately even if the voltage is lower than the end voltage, but it is necessary to turn off the protection switch only when the state continues for a certain period or longer. For this purpose, the protection circuit uses a timer comprising an internal oscillation circuit and a frequency dividing counter. The delay time at the time of detecting overcharge, overdischarge, and overcurrent (that is, the duration of the state below the end voltage until the protection switch is turned off) is all determined by the internal oscillation circuit and the counter. Therefore, an external capacitor for determining the delay time is not necessary, and the number of parts of the protection circuit board can be reduced.

  Further, the protection circuit disclosed in Patent Document 2 realizes that the clock circuit for creating the delay time is accelerated by adding a test terminal, the test time is shortened, and the cost of the inspection process is reduced. Yes.

  Furthermore, Patent Document 3 discloses a protection circuit that detects overcharge, overdischarge, discharge overcurrent, and charge overcurrent of a secondary battery. FIG. 2 is a schematic circuit diagram of a conventional secondary battery protection semiconductor device based on the protection circuit disclosed in Patent Document 3. As shown in FIG.

  The semiconductor device generally includes an overcharge detection circuit 11, an overdischarge detection circuit 12, a discharge overcurrent detection circuit 13, a charge overcurrent detection circuit 21, a short circuit detection circuit 14, a shortening circuit 30, an oscillation circuit 16, a counter circuit 17, And it is comprised from the abnormal charger detection circuit 15.

  In the semiconductor device, when overcharge, overdischarge, discharge overcurrent, short circuit, or charge overcurrent is detected, the oscillation circuit 16 starts to operate and the counter circuit 17 starts to operate. When a preset delay time is counted at each detection, the Cout output terminal (overcharge detection output terminal) is set to a low level in the case of overcharge or charge overcurrent through the logic circuit 20. In the case of overdischarge, discharge overcurrent, or short circuit, the Dout output terminal (overdischarge detection output terminal) is set to low level.

  The abnormal charger detection circuit 15 does not apply a large voltage (V-potential) to the input of the overcurrent detection circuit (13, 21) when an abnormal charger or the like is connected and a large voltage is applied to the battery pack. In this way, the switch SW2 is turned off (at the same time by connecting the switch SW1) to prevent the overcurrent detection voltage value from shifting due to the change in Vth of the transistor over time.

By the way, in the protective semiconductor device as shown in FIG. 2, at the time of reverse charging (that is, when + and − of the charger are connected opposite to those in FIG. 2), at short circuit, or at discharge overcurrent, V -The terminal voltage or the Cout terminal voltage may exceed the Vdd terminal voltage. In general, a PN junction is provided between the V-terminal and the Vdd terminal and between the Cout terminal and the Vdd terminal. Therefore, when the V-terminal voltage or the Cout terminal voltage exceeds the Vdd terminal voltage by more than Vf (forward voltage), a so-called on-current (ON current) flows. This current may cause malfunction in peripheral circuits of the V-terminal and Cout terminal, particularly the discharge overcurrent detection circuit.
JP-A-9-182283 JP 2002-186173 A JP 2002-176730 A

  It is an object of the present invention to prevent malfunctions even when the V-terminal voltage or the Cout terminal voltage exceeds the Vdd terminal voltage in a secondary battery protection semiconductor device.

The present invention has been made to achieve the above object. According to the first aspect of the present invention, there is provided a semiconductor device.
A secondary battery protection semiconductor device for detecting secondary battery overcharge, overdischarge, charge overcurrent, discharge overcurrent, or short circuit current to protect the secondary battery;
The position of the element having the same potential as the overcharge detection output terminal and the charger minus potential input terminal and the position of the discharge overcurrent detection comparator are arranged in the vicinity of each of the diagonal ends of the chip (substrate). And

  By utilizing the present invention, in the secondary protection semiconductor device, when reverse charge / discharge overcurrent / short circuit / charge overcurrent is detected, the V-terminal voltage and the Cout terminal voltage exceed the Vdd terminal voltage, and an on-current flows. However, malfunction of the discharge overcurrent circuit is less likely to occur.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments according to the invention will be described with reference to the drawings.

  A protective semiconductor device according to a preferred embodiment of the present invention is basically based on a conventional secondary battery protecting semiconductor device as shown in FIG. Therefore, the protective semiconductor device according to a preferred embodiment of the present invention is roughly composed of an overcharge detection circuit 11, an overdischarge detection circuit 12, a discharge overcurrent detection circuit 13, a charge overcurrent detection circuit 21, a short circuit detection circuit 14, The circuit includes a shortening circuit 30, an oscillation circuit 16, a counter circuit 17, and an abnormal charger detection circuit 15. When the semiconductor device detects overcharge, overdischarge, discharge overcurrent, short circuit, or charge overcurrent, the oscillation circuit 16 starts to operate and the counter circuit 17 starts to operate. When a preset delay time is counted at each detection, the logic circuit 20 sets the Cout output terminal (overcharge detection output terminal) to a low level in the case of overcharge or charge overcurrent. In the case of overdischarge, discharge overcurrent or short circuit, the Dout output (overdischarge detection output terminal) is set to low level.

  The abnormal charger detection circuit 15 is a circuit unit that performs a protection function when a large voltage is applied to the battery pack. That is, the abnormal charger detection circuit 15 applies a large voltage (V-potential) to the input of the overcurrent detection circuit (13, 21) when an abnormal charger or the like is connected and a large voltage is applied to the battery pack. By switching off the switch SW2 so as not to occur (at the same time by connecting the switch SW1), a shift of the overcurrent detection voltage value due to the change of the Vth of the transistor with time is prevented.

  Further, in the protective semiconductor device, a discharge overcurrent detection comparator constituting the discharge overcurrent detection circuit 13 is arranged at a position on the chip diagonal line with respect to the positions of the Cout terminal and the V− terminal.

  As described above, in the prior art, the V− terminal voltage or Cout is determined during reverse charging (that is, when + and − of the charger are connected in the opposite direction to those in FIG. 2), short circuit, or discharge overcurrent. If the terminal voltage exceeds the Vdd terminal voltage by more than Vf (forward voltage), a so-called on-current (ON current) flows and the discharge overcurrent detection circuit 13 may malfunction.

  Therefore, in the protective semiconductor device according to the preferred embodiment of the present invention, the Cout terminal and V− terminal and the discharge overcurrent detection comparator constituting the discharge overcurrent detection circuit 13 are arranged as far as possible. That is, the positions of the Cout terminal and V-terminal and the position of the discharge overcurrent detection comparator are arranged in the vicinity (36, 38) of the diagonal ends of the chip (substrate). FIG. 1 is a circuit diagram of an element having the same potential as an overcharge detection output terminal (Cout terminal) and a charger minus potential input terminal (V− terminal) in a secondary battery protection semiconductor device according to a preferred embodiment of the present invention. It is an arrangement plan of a position and a position of a discharge overcurrent detection comparator.

  In the secondary battery protection semiconductor device shown in FIG. 2, since the discharge overcurrent detection circuit 13 operates when detecting reverse charge / discharge overcurrent / short circuit / charge overcurrent, the discharge overcurrent detection circuit 13 particularly malfunctions. It can be said that it is in the state which is easy to produce. As shown in FIG. 1, by disposing the inside of the protective semiconductor device, the V-terminal and Cout terminal voltages exceed the Vdd terminal voltage when reverse charge / discharge overcurrent / short circuit / charge overcurrent is detected, and an on-current flows. However, the malfunction of the discharge overcurrent detection circuit 13 is less likely to occur.

  In the layout shown in FIG. 1, the position of the Cout terminal and the V− terminal is the lower right 38 of the chip (substrate), and the position of the discharge overcurrent detection comparator is the upper left 36 of the chip (substrate). Both positions may be reversed. Further, the position of the Cout terminal or V-terminal and the position of the discharge overcurrent detection comparator may be the lower left and upper right of the chip (substrate) shown in FIG.

  The present invention overcharges, overdischarges, charges overcharges a voltage regulator and voltage detector of a composite power supply IC, particularly a Li ion battery incorporated in a battery pack of a secondary battery used in a portable electronic device or the like. It can be used for a protective semiconductor device that protects against discharge overcharge and short-circuit current.

In the semiconductor device for secondary battery protection according to a preferred embodiment of the present invention, the position of the element having the same potential as the overcharge detection output terminal and the charger minus potential input terminal, and the position of the discharge overcurrent detection comparator FIG. It is a schematic circuit diagram of the semiconductor device for secondary battery protection of a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Overcharge detection circuit, 12 ... Overdischarge detection circuit, 13 ... Discharge overcurrent detection circuit, 14 ... Short circuit detection circuit, 15 ... Charger detection circuit, 16 ... Oscillation Circuit: 17... Counter circuit, 20... Logic circuit, 21... Abnormal charge overcurrent detection circuit, 30.

Claims (1)

A secondary battery protection semiconductor device for detecting secondary battery overcharge, overdischarge, charge overcurrent, discharge overcurrent, or short circuit current to protect the secondary battery;
The position of the element having the same potential as the overcharge detection output terminal and the charger negative potential input terminal and the position of the discharge overcurrent detection comparator are arranged in the vicinity of the opposite ends of the diagonal line of the chip (substrate). A semiconductor device.

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