JP5312662B1 - Wafer rotating apparatus and wafer rotating method - Google Patents

Wafer rotating apparatus and wafer rotating method Download PDF

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JP5312662B1
JP5312662B1 JP2012242437A JP2012242437A JP5312662B1 JP 5312662 B1 JP5312662 B1 JP 5312662B1 JP 2012242437 A JP2012242437 A JP 2012242437A JP 2012242437 A JP2012242437 A JP 2012242437A JP 5312662 B1 JP5312662 B1 JP 5312662B1
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wafer
cradle
guide
processing liquid
pedestal
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JP2014093388A (en
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弘明 石森
英治 栖原
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Kurashiki Spinning Co Ltd
Echo Giken Co Ltd
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Kurashiki Spinning Co Ltd
Echo Giken Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Abstract

【課題】 ウエハの処理ムラをなくすために、微小ゴミを発生させることなく、処理槽内でウエハを回転させることができるウエハ回転装置を提供する。
【解決手段】 処理液を収容し、処理液内にウエハを浸漬することができる処理液槽2と、 処理液槽2内で前記ウエハWの下部中間部分を保持し、ウエハの面に沿った方向に揺動可能に構成されているウエハ受台6と、処理液槽2内のウエハ受台6を挟むように配置され、ウエハ受台6に対し相対的に上下方向に移動することでウエハの下部両端部分を保持可能に構成されている1組のウエハガイド7と、ウエハWを、ウエハガイド7に保持させた状態でウエハ受台6を揺動させた後ウエハ受台6とウエハガイド7とを相対的に上下方向に移動させてウエハ受台6に戻すことで、ウエハ受台6におけるウエハWの支持部分を異ならせてウエハを回転させる。
【選択図】 図1
PROBLEM TO BE SOLVED: To provide a wafer rotating device capable of rotating a wafer in a processing tank without generating fine dust in order to eliminate processing unevenness of the wafer.
SOLUTION: A processing liquid tank 2 for storing a processing liquid and capable of immersing a wafer in the processing liquid; and a lower intermediate portion of the wafer W is held in the processing liquid tank 2 along the surface of the wafer. The wafer pedestal 6 configured to be swingable in the direction and the wafer pedestal 6 in the processing liquid tank 2 are disposed so as to sandwich the wafer pedestal 6, and move vertically relative to the wafer pedestal 6 to move the wafer. A pair of wafer guides 7 configured to be able to hold both lower ends of the wafer, and the wafer holder 6 and the wafer guide after the wafer holder 6 is swung while the wafer W is held by the wafer guide 7. 7 is moved up and down relatively and returned to the wafer cradle 6 to rotate the wafer by changing the support portion of the wafer W on the wafer cradle 6.
[Selection] Figure 1

Description

本発明は、ウエハ洗浄装置やエッチング処理装置などのウエハ処理槽中に浸漬されたウエハを処理槽内で回転させるウエハ回転装置及びウエハ回転方法に関するものである。   The present invention relates to a wafer rotating apparatus and a wafer rotating method for rotating a wafer immersed in a wafer processing tank such as a wafer cleaning apparatus or an etching processing apparatus in the processing tank.

従来から、半導体製造プロセスにおける洗浄プロセス技術は、ウエハの清浄性を保つ上で欠かせないプロセス技術である。近年、半導体製造プロセスはより高い精度がもとめられており、要求されるパーティクル除去性能もますます厳しくなっている。   Conventionally, a cleaning process technique in a semiconductor manufacturing process is an indispensable process technique for maintaining the cleanliness of a wafer. In recent years, semiconductor manufacturing processes have been required to have higher accuracy, and the required particle removal performance has become increasingly severe.

超音波洗浄法は、このような洗浄プロセス技術の1つとして広く使用されている。超音波洗浄法は、ウエハ表面の汚染物質に超音波を照射することで汚染物質を除去し、酸やアルカリなどの化学洗浄法と併用することにより洗浄効率を向上させる重要な技術である。   The ultrasonic cleaning method is widely used as one of such cleaning process techniques. The ultrasonic cleaning method is an important technique for improving the cleaning efficiency by removing the contaminants by irradiating the contaminants on the wafer surface with ultrasonic waves and using them together with a chemical cleaning method such as acid or alkali.

超音波洗浄装置では、発振した超音波の進行方向に対してウエハを支持する部材の影になる部分には、この支持部材が障害になり超音波が届かない部分が出る、あるいは超音波発生装置からの距離の違いによる洗浄の程度に差が出ることにより、洗浄ムラが発生してウエハ面内における均一な汚染物質除去性能を得られないという問題があった。   In the ultrasonic cleaning apparatus, a portion that is a shadow of the member that supports the wafer in the traveling direction of the oscillated ultrasonic wave has a portion where the support member becomes an obstacle and the ultrasonic wave does not reach, or the ultrasonic generator Due to the difference in the degree of cleaning due to the difference in distance from the wafer, there is a problem in that cleaning unevenness occurs and uniform contaminant removal performance within the wafer surface cannot be obtained.

この問題を解消するため、例えば、特許文献1(特開2006−324495号公報)及び特許文献2(特開2011−165694号公報)などにおいて、洗浄ムラを抑制することができる、ウエハ洗浄装置が提案されている。   In order to solve this problem, for example, in Patent Document 1 (Japanese Patent Laid-Open No. 2006-324495) and Patent Document 2 (Japanese Patent Laid-Open No. 2011-165694), a wafer cleaning apparatus that can suppress cleaning unevenness is disclosed. Proposed.

特許文献1の洗浄装置は、洗浄槽中に、ウエハガイドとウエハチャックとを双方備え、ウエハの洗浄中にこれらによるウエハの保持を切り替えることによって、ウエハ支持部材の影になる部分を異ならせることで洗浄ムラを解消しようとするものである。   The cleaning device of Patent Document 1 includes both a wafer guide and a wafer chuck in a cleaning tank, and changes the shadowed portion of the wafer support member by switching the holding of the wafer during cleaning of the wafer. It is intended to eliminate cleaning unevenness.

また、特許文献2の洗浄装置は、複数の洗浄槽において、それぞれの洗浄槽でウエハを支持する受け溝の位置を異ならせることで、複数の洗浄槽全体としての超音波の未照射領域をなくすこととしたものである。   Moreover, the cleaning apparatus of Patent Document 2 eliminates the unirradiated areas of the ultrasonic waves as a whole of the plurality of cleaning tanks by changing the positions of the receiving grooves that support the wafers in the plurality of cleaning tanks. That's what it meant.

特開2006−324495号公報JP 2006-324495 A 特開2011−165694号公報JP 2011-165694 A

しかし、特許文献1の装置では、ウエハを支持する部材を異ならせることで未照射領域自体はなくすことができるが、ウエハの部位ごとの洗浄の品質ムラを解消することは困難であった。特に近年、ウエハの大径化が進められているところ、超音波発生装置からの距離及び槽内の洗浄液の温度や濃度が不均一であるため、洗浄の品質差が生じるという問題が表面化してきている。   However, in the apparatus of Patent Document 1, the non-irradiated area itself can be eliminated by changing the member that supports the wafer, but it is difficult to eliminate unevenness in cleaning quality for each part of the wafer. In particular, in recent years, as the diameter of wafers has been increased, the distance from the ultrasonic generator and the temperature and concentration of the cleaning liquid in the tank are not uniform, which has led to the problem that quality differences in cleaning occur. Yes.

また、半導体の洗浄工程は、微小な不純物を取り除くことが目的であり、洗浄槽にベルトや歯車などの微小ゴミを発生させるような複雑な機構を使うことはパーティクル除去条件が厳しくなっている現在では実質不可能となっている。   In addition, the semiconductor cleaning process is aimed at removing minute impurities, and the use of a complicated mechanism that generates minute debris such as belts and gears in the cleaning tank has severe particle removal conditions. Then it is virtually impossible.

また、特許文献2の装置は、複数の洗浄槽の存在を前提とするものであり、単一の洗浄槽では洗浄ムラを解消することはできないという問題があった。   Further, the apparatus of Patent Document 2 is premised on the presence of a plurality of cleaning tanks, and there is a problem in that cleaning unevenness cannot be eliminated with a single cleaning tank.

したがって、本発明が解決しようとする技術的課題は、ウエハ支持部材の障害、超音波照射距離の違い、処理液の不均一分布などによる処理ムラをなくすために、微小ゴミを発生させることなく、処理槽内でウエハを回転させることができるウエハ回転装置を提供することである。   Therefore, the technical problem to be solved by the present invention is to eliminate the processing unevenness due to the failure of the wafer support member, the difference in the ultrasonic irradiation distance, the non-uniform distribution of the processing liquid, etc. It is an object of the present invention to provide a wafer rotating apparatus capable of rotating a wafer in a processing tank.

本発明は、上記技術的課題を解決するために、以下の構成のウエハ回転装置を提供する。   In order to solve the above technical problem, the present invention provides a wafer rotating apparatus having the following configuration.

本発明の第1態様によれば、
処理液を収容し、前記処理液内にウエハを浸漬することができる処理液槽と、
前記処理液槽内で前記ウエハの周縁下部中間部分を保持し、ウエハの面に沿った方向に揺動可能に構成されているウエハ受台と、
前記処理液槽内の前記ウエハ受台を挟むように配置され、前記ウエハ受台に対し相対的に上下方向に移動することで前記ウエハの周縁下部の前記ウエハ受台による保持部分よりも端側の部分を保持可能に構成されている1組のウエハガイドと、を備え、
前記ウエハガイドは、前記ウエハ受台が第1の方向に揺動する時に前記ウエハの周縁に近接するよう位置すると共に、前記ウエハを、ウエハガイドに保持させた状態で前記ウエハ受台を第2の方向に揺動させた後前記ウエハ受台とウエハガイドとを相対的に上下方向に移動させて前記ウエハ受台に戻すことで、前記ウエハ受台におけるウエハの支持部分を異ならせて前記ウエハを回転させることを特徴とする、ウエハ回転装置を提供する。
According to the first aspect of the present invention,
A processing liquid tank for storing the processing liquid and capable of immersing the wafer in the processing liquid;
A wafer cradle configured to hold a lower peripheral middle portion of the wafer in the processing liquid tank and swingable in a direction along the surface of the wafer;
It is arranged so as to sandwich the wafer cradle in the processing liquid tank, and moves in the vertical direction relative to the wafer cradle so that it is closer to the end than the holding portion by the wafer cradle at the lower peripheral edge of the wafer comprising of a set of wafer guide is configured to be able to hold the part, and
The wafer guide is positioned so as to be close to the periphery of the wafer when the wafer cradle swings in the first direction, and the wafer cradle is held in a state where the wafer is held by the wafer guide . by the returning in the wafer receiving base and the wafer guide and relatively moved in the vertical direction the wafer pedestal after swinging direction, the varied supporting portion of the wafer in the wafer receiving base wafer The present invention provides a wafer rotating apparatus characterized by rotating the wafer.

本発明の第2態様によれば、前記ウエハガイドは、上下移動可能に構成されており、前記ウエハガイドが下降することで、前記ウエハ受台にウエハが戻ることを特徴とする、第1態様のウエハ回転装置を提供する。   According to a second aspect of the present invention, the wafer guide is configured to be movable up and down, and when the wafer guide is lowered, the wafer is returned to the wafer cradle. A wafer rotating apparatus is provided.

本発明の第3態様によれば、前記ウエハ受台は、支持する前記ウエハの中心軸を回転中心として揺動するように構成されていることを特徴とする、第1又は第2態様のウエハ回転装置を提供する。   According to a third aspect of the present invention, the wafer cradle is configured to swing around the center axis of the wafer to be supported as a rotation center. The wafer according to the first or second aspect, A rotating device is provided.

本発明の第4態様によれば、前記ウエハガイドは、それぞれ、前記ウエハの厚み方向に配置された2本のガイド本体と、前記2本のガイド本体間に懸架されるように配置された支持部材とを備えることを特徴とする、第1から第3態様のいずれか1つのウエハ回転装置を提供する。   According to a fourth aspect of the present invention, each of the wafer guides includes two guide bodies disposed in the thickness direction of the wafer, and a support disposed so as to be suspended between the two guide bodies. A wafer rotating apparatus according to any one of the first to third aspects is provided.

本発明の第5態様によれば、処理液を収容し、前記処理液内にウエハを浸漬することができる処理液槽内で前記ウエハの周縁下部中間部分を保持し、ウエハの面に沿った方向に揺動可能に構成されているウエハ受台と、前記ウエハ受台に対し相対的に上下方向に移動することで前記ウエハの周縁下部の前記ウエハ受台による保持部分よりも端側の部分を保持可能に構成されている1組のウエハガイドと、を備えるウエハ回転装置を用い、
前記ウエハを、前記ウエハガイドに保持させた状態で前記ウエハ受台を揺動させた後前記ウエハ受台とウエハガイドとを相対的に上下方向に移動させて前記ウエハ受台に戻すことで、前記ウエハ受台におけるウエハの支持部分を異ならせて前記ウエハを回転させることを特徴とする、ウエハ回転方法を提供する。
According to the fifth aspect of the present invention, the processing liquid is accommodated and the lower peripheral edge middle portion of the wafer is held in the processing liquid tank capable of immersing the wafer in the processing liquid, and is along the surface of the wafer. A wafer cradle configured to be swingable in a direction, and a portion closer to the end than the holding portion by the wafer cradle at the lower peripheral edge of the wafer by moving in a vertical direction relative to the wafer cradle Using a wafer rotation device comprising a set of wafer guides configured to be capable of holding
By swinging the wafer pedestal while the wafer is held by the wafer guide and then moving the wafer pedestal and the wafer guide relatively up and down to return to the wafer pedestal, There is provided a wafer rotating method, wherein the wafer is rotated by changing a wafer support portion in the wafer cradle.

本発明の第6態様によれば、前記ウエハ受台とウエハガイドとの間のウエハの受け渡しは、前記ウエハガイドが上昇することで、前記ウエハ受台からウエハガイドに前記ウエハが保持され、前記ウエハガイドが下降することで前記ウエハ受台にウエハが戻ることを特徴とする、第5態様のウエハ回転方法を提供する。   According to the sixth aspect of the present invention, in the transfer of the wafer between the wafer cradle and the wafer guide, the wafer guide is lifted so that the wafer is held from the wafer cradle to the wafer guide, A wafer rotation method according to a fifth aspect is provided, wherein the wafer is returned to the wafer cradle by lowering the wafer guide.

本発明によれば、ウエハ受台を揺動可能で、ウエハガイドに対して相対的な上下位置を変更可能に構成することで、ウエハ受台とウエハガイドへのウエハの受け渡しを実現することができる。また、ウエハガイドがウエハを支持している状態でウエハ受台の傾斜角度を変更することで、ウエハを周方向に回転した状態に保持することができるので、ウエハの上下方向位置による部位のムラをなくすことができる。   According to the present invention, the wafer pedestal can be swung and the vertical position relative to the wafer guide can be changed, so that the wafer can be delivered to the wafer pedestal and the wafer guide. it can. Further, by changing the tilt angle of the wafer pedestal while the wafer guide is supporting the wafer, the wafer can be held in the circumferentially rotated state, so that the unevenness of the part due to the vertical position of the wafer can be maintained. Can be eliminated.

また、ウエハ受台は、支持するウエハの中心軸の位置を回転中心として揺動するように構成することで、位置ずれなどを起こすことなくウエハの受け渡しをすることができる。   In addition, the wafer pedestal is configured to swing around the center axis of the wafer to be supported, so that the wafer can be transferred without causing a positional shift or the like.

本発明の実施形態にかかるウエハ回転装置を用いたウエハ洗浄装置の構成を示す模式図である。It is a schematic diagram which shows the structure of the wafer cleaning apparatus using the wafer rotating apparatus concerning embodiment of this invention. 図1のウエハ回転装置の内部構成を模式的に示す一部断面斜視図である。It is a partial cross section perspective view which shows typically the internal structure of the wafer rotating apparatus of FIG. 図1のウエハ回転装置の動作手順の各工程を示す図である。It is a figure which shows each process of the operation | movement procedure of the wafer rotating apparatus of FIG. 図1のウエハ回転装置の動作手順の図3に示した続きの各工程を示す図である。FIG. 4 is a diagram showing each of the subsequent steps shown in FIG. 3 of the operation procedure of the wafer rotating apparatus in FIG. 1.

以下、本発明の実施形態に係るウエハ回転装置について、図面を参照しながら説明する。図1は、本発明の実施形態にかかるウエハ回転装置を用いたウエハ洗浄装置の構成を示す模式図である。図2は、図1のウエハ回転装置の内部構成を模式的に示す一部断面斜視図であり、伝播用水槽4を省略している。   Hereinafter, a wafer rotating apparatus according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram showing a configuration of a wafer cleaning apparatus using a wafer rotating apparatus according to an embodiment of the present invention. FIG. 2 is a partial cross-sectional perspective view schematically showing the internal configuration of the wafer rotating apparatus of FIG. 1, and the propagation water tank 4 is omitted.

本実施形態にかかるウエハ回転装置1を用いたウエハ洗浄装置100は、洗浄液を収容する洗浄槽(内槽)2を備えており、当該洗浄槽2の外側に外槽3を備えている。洗浄槽2内の洗浄液は、オーバーフローして外槽3に流れるように構成されており、さらに外槽3の外側には、伝播水で満たされた伝播用水槽4が設けられている。水槽4の底壁外面には、超音波発信部5が設けられている。   A wafer cleaning apparatus 100 using the wafer rotating apparatus 1 according to the present embodiment includes a cleaning tank (inner tank) 2 that stores a cleaning liquid, and includes an outer tank 3 outside the cleaning tank 2. The cleaning liquid in the cleaning tank 2 overflows and flows into the outer tank 3, and a propagation water tank 4 filled with propagation water is provided outside the outer tank 3. An ultrasonic transmission unit 5 is provided on the outer surface of the bottom wall of the water tank 4.

洗浄対象となるウエハWは、図2に示すように、複数枚のウエハWが所定の間隔をおいて互いに平行になるように洗浄槽2内に配置される。ウエハWは、ウエハ受台6により保持される。   As shown in FIG. 2, the wafers W to be cleaned are arranged in the cleaning tank 2 so that a plurality of wafers W are parallel to each other at a predetermined interval. The wafer W is held by the wafer cradle 6.

ウエハ受台6は、図2に示すように、ウエハに略平行に配置される1組の受台本体部11と受台本体部11の下端側に設けられる受け部材12とを備える。受け部材12は、ウエハの中心部分に1本及び中心部分から中心角が10〜45°程度の範囲内に2本の合計3本設けられており、3点でウエハの周縁の下側中央部分を支持することでウエハWを保持する。 As shown in FIG. 2, the wafer cradle 6 includes a pair of cradle main body portions 11 arranged substantially parallel to the wafer and a receiving member 12 provided on the lower end side of the cradle main body portion 11. A total of three receiving members 12 are provided, one at the central portion of the wafer and two within a range of a central angle of about 10 to 45 ° from the central portion, and the lower central portion at the periphery of the wafer at three points. The wafer W is held by supporting.

本体11は、ウエハWの中央部分を被覆すると共に、ウエハの両端側は外部に露出するような形状であり、さらに、上側に延びた連結脚13により、洗浄槽2外に設けられ、下方へ延びる揺動脚14に脱着可能に連結する。洗浄槽2内にウエハを投入する場合は、ウエハ受台6にウエハを保持させた後、洗浄槽2の上側から槽内に浸漬させ、連結脚13と揺動脚14とを連結する。 The main body 11 covers the central portion of the wafer W, and has a shape such that both end sides of the wafer are exposed to the outside. Further, the main body 11 is provided outside the cleaning tank 2 by a connecting leg 13 extending upward, and downward. Removably connected to the extending swing leg 14. When the wafer is put into the cleaning tank 2, the wafer holder 6 holds the wafer and is immersed in the tank from the upper side of the cleaning tank 2 to connect the connecting leg 13 and the swing leg 14.

揺動脚14は、伝播用水槽4の外面に軸支されており固定軸に対して回転を与える揺動装置15により、図1の矢印90に示すように、ウエハWの主面に沿った方向に揺動する。なお、揺動脚14の揺動中心Cは、ウエハ受台6との連結時にウエハWの中心軸上に位置するように構成されることが好ましい。   The swing leg 14 is supported by the outer surface of the propagation water tank 4 and is rotated along the main surface of the wafer W by the swing device 15 that rotates relative to the fixed shaft, as indicated by an arrow 90 in FIG. Swing in the direction. The swing center C of the swing leg 14 is preferably configured to be positioned on the center axis of the wafer W when connected to the wafer cradle 6.

ウエハ受台6の両サイドには、一対のウエハガイド7が設けられている。ウエハガイド7は、洗浄槽2の外側に設けられる昇降装置16によって、矢印91に示すように上下移動可能に設けられる。本実施形態では昇降装置はシリンダにより構成されており、シリンダロッド16aの先端に設けられた連結部16bにウエハ受台6が脱着可能に固定されている。   A pair of wafer guides 7 are provided on both sides of the wafer cradle 6. The wafer guide 7 is provided so as to be vertically movable as indicated by an arrow 91 by an elevating device 16 provided outside the cleaning tank 2. In the present embodiment, the lifting device is constituted by a cylinder, and the wafer cradle 6 is detachably fixed to a connecting portion 16b provided at the tip of the cylinder rod 16a.

ウエハガイド7の昇降位置16は、任意の位置に停止可能に構成されていてもよいし、上段、中段、下段など、予め決められた複数の位置の間を移動できるように構成されていてもよい。   The elevation position 16 of the wafer guide 7 may be configured to be able to stop at an arbitrary position, or may be configured to be able to move between a plurality of predetermined positions such as an upper stage, a middle stage, and a lower stage. Good.

ウエハガイド7は、それぞれウエハWの厚み方向に並べて配置された1組のガイド本体部17と、2本のガイド本体部17の間に懸架されるように配置された支持部材18とを備える。支持部材18は、ウエハの周縁の下部左右両端部分を保持可能な位置に設けられており、昇降装置16によりウエハガイド7が上昇すると、ウエハWの周縁の下部両端部分が支持部材18に係止されてウエハガイド7によってウエハWが保持され、ウエハ受台6はウエハWを保持しない状態となる。 The wafer guide 7 includes a pair of guide main body portions 17 arranged side by side in the thickness direction of the wafer W, and a support member 18 disposed so as to be suspended between the two guide main body portions 17. The support member 18 is provided at a position where the lower left and right ends of the periphery of the wafer can be held. When the wafer guide 7 is raised by the lifting device 16 , the lower ends of the periphery of the wafer W are locked to the support member 18. Then, the wafer W is held by the wafer guide 7, and the wafer cradle 6 is in a state of not holding the wafer W.

この状態において、ウエハ受台6を揺動させて傾斜状態とし、さらにウエハガイド7を下降させてウエハ受台6にウエハWを移動させることにより、ウエハ受台6によるウエハWの保持部分を異ならせることができる。なお、ウエハ受台6及びウエハガイド7の駆動制御は、図示しない駆動制御手段により、揺動装置15及び昇降装置16の動作を制御することによって自動的に行うことができる。   In this state, the wafer cradle 6 is swung so as to be inclined, and the wafer guide 7 is lowered to move the wafer W to the wafer cradle 6. Can be made. The drive control of the wafer cradle 6 and the wafer guide 7 can be automatically performed by controlling the operations of the swing device 15 and the lifting device 16 by a drive control means (not shown).

したがって、超音波が照射されない領域がなくなり、さらに、ウエハWが回転することで、その上下位置の入れ替えが行われる。よって、超音波発生装置5からの距離及び槽内の洗浄液の温度や濃度分布の差によって洗浄の品質差が生じるという問題を解消することができる。   Therefore, there is no region where the ultrasonic waves are not irradiated, and the wafer W is rotated, so that the vertical position is switched. Therefore, it is possible to solve the problem that the cleaning quality difference is caused by the distance from the ultrasonic generator 5 and the temperature and concentration distribution of the cleaning liquid in the tank.

また、本実施形態において、ウエハ受台6及びウエハガイド7の駆動部分は、いずれも洗浄槽2の外部に設けられることとなり、駆動部分から微小ゴミなどが発生するおそれがない。   In the present embodiment, the drive parts of the wafer cradle 6 and the wafer guide 7 are both provided outside the cleaning tank 2, and there is no possibility of generating fine dust from the drive parts.

次に、本実施形態にかかるウエハ回転装置の動作について説明する。以下の説明においては、ウエハを回転させる機構を中心として説明する。   Next, the operation of the wafer rotating apparatus according to the present embodiment will be described. In the following description, a mechanism for rotating the wafer will be mainly described.

図3及び図4は、本実施形態にかかるウエハ回転装置の動作手順の各工程を示す図である。なお、図3及び図4においては、ウエハWの同一部位に矢印を付して、ウエハの回転の様子を分かりやすく表示している。   3 and 4 are diagrams showing each step of the operation procedure of the wafer rotating apparatus according to the present embodiment. In FIGS. 3 and 4, an arrow is attached to the same part of the wafer W to display the state of rotation of the wafer in an easy-to-understand manner.

図3(a)は、ウエハ受台6に保持されたウエハを洗浄槽2内に投入する工程を示している。図3(a)に示すように、ウエハの投入時には、ウエハガイド7は下段に位置しており、矢印92に示すように、図示しない搬送ロボットによりホルダ受台6を洗浄槽2内に下降させて投入する。ウエハガイド7が下段に位置している状態では、ウエハガイド7の支持部材18は、ウエハWに接触することなく、ホルダ受台6のみでウエハWを保持する。この状態において、洗浄槽2内でウエハWの洗浄を行うと、ホルダ受台6の受け部材12が位置する部分は、超音波が届かず、洗浄ムラが生じることになるため、次の手順によりウエハWの保持部分の変更を行う。   FIG. 3A shows a process of putting the wafer held on the wafer cradle 6 into the cleaning tank 2. As shown in FIG. 3A, when the wafer is loaded, the wafer guide 7 is positioned at the lower stage, and as shown by an arrow 92, the holder cradle 6 is lowered into the cleaning tank 2 by a transfer robot (not shown). And put it in. In a state where the wafer guide 7 is positioned at the lower stage, the support member 18 of the wafer guide 7 does not contact the wafer W and holds the wafer W only by the holder cradle 6. When the wafer W is cleaned in the cleaning tank 2 in this state, the ultrasonic wave does not reach the portion where the receiving member 12 of the holder receiving base 6 is located, and cleaning unevenness occurs. The holding part of the wafer W is changed.

図3(b)に示す状態は、ウエハ受台6を中立に維持したまま、矢印93に示すようにウエハガイド7を中段へ上昇させる。この状態では、ウエハガイド7の支持部材18は、ウエハWの左右両側にごく近接した状態となっているが、ウエハWの依然としてウエハ受台6に保持されている。   In the state shown in FIG. 3B, the wafer guide 7 is raised to the middle as shown by an arrow 93 while the wafer cradle 6 is maintained neutral. In this state, the support members 18 of the wafer guide 7 are in close proximity to the left and right sides of the wafer W, but the wafer W is still held on the wafer cradle 6.

次いで、図3(c)に示すように、ウエハ受台6を矢印94に示すように傾斜させる。本実施形態では、傾斜角度は、概ね15°程度としている。この状態では、上記の通りウエハWはウエハ受台6に保持されているため、ウエハ受台6の傾斜に応じてウエハWが傾斜する。また、ウエハガイド7の支持部材18が、ウエハWの左右両端側に近接しているため、ウエハ受台6の傾斜動作によって、ウエハWの落下が防止される。   Next, as shown in FIG. 3C, the wafer cradle 6 is tilted as indicated by an arrow 94. In the present embodiment, the inclination angle is approximately 15 °. In this state, since the wafer W is held on the wafer holder 6 as described above, the wafer W is inclined according to the inclination of the wafer holder 6. In addition, since the support member 18 of the wafer guide 7 is close to the left and right ends of the wafer W, the wafer W is prevented from falling by the tilting operation of the wafer cradle 6.

次に、図3(d)においてウエハガイド7を矢印95に示すように上段まで上昇させ、ウエハWをウエハ受台6より浮かした状態とする。この状態では、ウエハWはウエハガイド7のみによって保持されており、ガイド受台6が自由に回転することも可能である。   Next, in FIG. 3D, the wafer guide 7 is raised to the upper stage as indicated by an arrow 95, and the wafer W is brought into a state of floating from the wafer cradle 6. In this state, the wafer W is held only by the wafer guide 7, and the guide cradle 6 can freely rotate.

図4(e)に矢印96に示すように、ウエハ受台6を逆方向へ概ね15°程度傾斜させる。この状態では、上記の通りウエハWはウエハガイド7に保持されているため、ウエハ受台6の傾斜がウエハWの傾斜に影響を与えることがない。結果として、ウエハWとウエハ受台6の接点を30°ずらすことができる。   As shown by an arrow 96 in FIG. 4E, the wafer cradle 6 is inclined approximately 15 ° in the reverse direction. In this state, since the wafer W is held by the wafer guide 7 as described above, the inclination of the wafer receiving base 6 does not affect the inclination of the wafer W. As a result, the contact between the wafer W and the wafer cradle 6 can be shifted by 30 °.

次に図4(f)の矢印97に示すように、ウエハガイド7を中段に下降させ、ウエハWをウエハ受台6に載せる。図4(g)に示すように、ウエハ受台6を矢印98に示すように概ね15°程度傾斜させる。この状態では、上記の通りウエハWはウエハ受台6に保持されているため、ウエハ受台6の傾斜に応じてウエハWが傾斜し、30°回転したこととなる。また、ウエハガイド7の支持部材18が、ウエハWの左右両端側に近接しているため、ウエハ受台6の傾斜動作によって、ウエハWの落下が防止される。   Next, as indicated by an arrow 97 in FIG. 4 (f), the wafer guide 7 is lowered to the middle stage, and the wafer W is placed on the wafer cradle 6. As shown in FIG. 4G, the wafer cradle 6 is inclined approximately 15 ° as indicated by an arrow 98. In this state, since the wafer W is held on the wafer pedestal 6 as described above, the wafer W is tilted according to the tilt of the wafer pedestal 6 and rotated by 30 °. In addition, since the support member 18 of the wafer guide 7 is close to the left and right ends of the wafer W, the wafer W is prevented from falling by the tilting operation of the wafer cradle 6.

次に、図4(h)においてウエハガイド7を矢印99に示すように上段まで上昇させ、ウエハWをウエハ受台6より浮かした状態とする。この状態では、ウエハWはウエハガイド7のみによって保持されており、ガイド受台6が自由に回転することも可能である。   Next, in FIG. 4 (h), the wafer guide 7 is raised to the upper stage as indicated by an arrow 99 to bring the wafer W into a state of being lifted from the wafer cradle 6. In this state, the wafer W is held only by the wafer guide 7, and the guide cradle 6 can freely rotate.

以下、図4(e)から図4(h)の動作を繰り返すことで、ウエハWを30°ずつ回転させることができる。   Thereafter, by repeating the operations from FIG. 4E to FIG. 4H, the wafer W can be rotated by 30 °.

以上説明したように、本発明の実施形態にかかるウエハ洗浄装置によれば、超音波が照射されない領域がなくなり、さらに、ウエハWが回転することで、その上下位置の入れ替えが行われる。よって、超音波発生装置5からの距離及び槽内の洗浄液の温度や濃度分布の差によって洗浄の品質差が生じるという問題を解消することができる。
ことができる
As described above, according to the wafer cleaning apparatus according to the embodiment of the present invention, there is no region that is not irradiated with ultrasonic waves, and the wafer W is rotated so that the vertical position is switched. Therefore, it is possible to solve the problem that the cleaning quality difference is caused by the distance from the ultrasonic generator 5 and the temperature and concentration distribution of the cleaning liquid in the tank.
be able to

また、ウエハ受台6及びウエハガイド7の駆動機構は、いずれも洗浄槽2内に存在しないため、これらの駆動部材の動作によって微小ゴミが生じることがなく、洗浄液を汚染することがない。   Further, since neither the drive mechanism of the wafer cradle 6 nor the wafer guide 7 exists in the cleaning tank 2, fine dust is not generated by the operation of these drive members, and the cleaning liquid is not contaminated.

なお、本発明は上記実施形態に限定されるものではなく、その他種々の態様で実施可能である。例えば、本実施形態は、ウエハ洗浄装置について説明したが、エッチング処理装置にも用いることが可能である。   In addition, this invention is not limited to the said embodiment, It can implement in another various aspect. For example, although the present embodiment has been described with reference to a wafer cleaning apparatus, it can also be used in an etching processing apparatus.

また、ウエハWの回転の態様については、図3及び図4の工程に限定されるものではなく、ウエハガイド7とウエハ受台6との間でウエハWを受け渡ししつつ、ウエハガイド7に保持させているタイミングでウエハ受台6の傾斜角度を異ならせることで、ウエハWとウエハ受台6の接触位置を異ならせ、結果としてウエハWが回転するような動作手順を広く含む。   Further, the mode of rotation of the wafer W is not limited to the process shown in FIGS. 3 and 4, and the wafer W is transferred between the wafer guide 7 and the wafer cradle 6 and held by the wafer guide 7. By varying the inclination angle of the wafer cradle 6 at the timing, the contact procedure between the wafer W and the wafer cradle 6 is made different, and as a result, the operation procedure for rotating the wafer W is widely included.

1 ウエハ回転装置
2 洗浄槽
3 外槽
4 伝播用水槽
5 超音波発信部
6 ウエハ受台
7 ウエハガイド
11 受台本体部
12 受け部材
13 連結脚
14 揺動脚
15 揺動装置
16 昇降装置
17 ガイド本体部
18 支持部材
100 ウエハ洗浄装置
C 回転中心
W ウエハ
DESCRIPTION OF SYMBOLS 1 Wafer rotation apparatus 2 Cleaning tank 3 Outer tank 4 Propagation water tank 5 Ultrasonic transmission part 6 Wafer receiving base 7 Wafer guide 11 Receiving body part 12 Receiving member 13 Connecting leg 14 Swing leg 15 Swing apparatus 16 Lifting apparatus 17 Guide Main body 18 Support member 100 Wafer cleaning device C Center of rotation W Wafer

Claims (6)

処理液を収容し、前記処理液内にウエハを浸漬することができる処理液槽と、
前記処理液槽内で前記ウエハの周縁下部中間部分を保持し、ウエハの面に沿った方向に揺動可能に構成されているウエハ受台と、
前記処理液槽内の前記ウエハ受台を挟むように配置され、前記ウエハ受台に対し相対的に上下方向に移動することで前記ウエハの周縁下部の前記ウエハ受台による保持部分よりも端側の部分を保持可能に構成されている1組のウエハガイドと、を備え、
前記ウエハガイドは、前記ウエハ受台が第1の方向に揺動する時に前記ウエハの周縁に近接するよう位置すると共に、前記ウエハを、ウエハガイドに保持させた状態で前記ウエハ受台を第2の方向に揺動させた後前記ウエハ受台とウエハガイドとを相対的に上下方向に移動させて前記ウエハ受台に戻すことで、前記ウエハ受台におけるウエハの支持部分を異ならせて前記ウエハを回転させることを特徴とする、ウエハ回転装置。
A processing liquid tank for storing the processing liquid and capable of immersing the wafer in the processing liquid;
A wafer cradle configured to hold a lower peripheral middle portion of the wafer in the processing liquid tank and swingable in a direction along the surface of the wafer;
It is arranged so as to sandwich the wafer cradle in the processing liquid tank, and moves in the vertical direction relative to the wafer cradle so that it is closer to the end than the holding portion by the wafer cradle at the lower peripheral edge of the wafer comprising of a set of wafer guide is configured to be able to hold the part, and
The wafer guide is positioned so as to be close to the periphery of the wafer when the wafer cradle swings in the first direction, and the wafer cradle is held in a state where the wafer is held by the wafer guide . by the returning in the wafer receiving base and the wafer guide and relatively moved in the vertical direction the wafer pedestal after swinging direction, the varied supporting portion of the wafer in the wafer receiving base wafer A wafer rotating device characterized by rotating the wafer.
前記ウエハガイドは、上下移動可能に構成されており、前記ウエハガイドが下降することで、前記ウエハ受台にウエハが戻ることを特徴とする、請求項1に記載のウエハ回転装置。   The wafer rotation apparatus according to claim 1, wherein the wafer guide is configured to be movable up and down, and the wafer returns to the wafer receiving base when the wafer guide is lowered. 前記ウエハ受台は、支持する前記ウエハの中心軸を回転中心として揺動するように構成されていることを特徴とする、請求項1又は2に記載のウエハ回転装置。   The wafer rotating apparatus according to claim 1, wherein the wafer cradle is configured to swing around a center axis of the wafer to be supported. 前記ウエハガイドは、それぞれ、前記ウエハの厚み方向に配置された2本のガイド本体と、前記2本のガイド本体間に懸架されるように配置された支持部材とを備えることを特徴とする、請求項1から3のいずれか1つに記載のウエハ回転装置。   Each of the wafer guides includes two guide bodies disposed in the thickness direction of the wafer, and a support member disposed to be suspended between the two guide bodies. The wafer rotating apparatus according to claim 1. 処理液を収容し、前記処理液内にウエハを浸漬することができる処理液槽内で前記ウエハの周縁下部中間部分を保持し、ウエハの面に沿った方向に揺動可能に構成されているウエハ受台と、前記ウエハ受台に対し相対的に上下方向に移動することで前記ウエハの周縁下部の前記ウエハ受台による保持部分よりも端側の部分を保持可能に構成されている1組のウエハガイドと、を備えるウエハ回転装置を用い、
前記ウエハを、前記ウエハガイドに保持させた状態で前記ウエハ受台を揺動させた後前記ウエハ受台とウエハガイドとを相対的に上下方向に移動させて前記ウエハ受台に戻すことで、前記ウエハ受台におけるウエハの支持部分を異ならせて前記ウエハを回転させることを特徴とする、ウエハ回転方法。
It is configured to hold the processing liquid, hold the lower peripheral middle portion of the wafer in a processing liquid tank in which the wafer can be immersed in the processing liquid, and can swing in the direction along the surface of the wafer. One set configured to hold a wafer cradle and a portion on the end side of the wafer cradle at a lower end of the periphery of the wafer than the holding portion by the wafer cradle by moving in a vertical direction relative to the wafer cradle. Using a wafer rotation device comprising:
By swinging the wafer pedestal while the wafer is held by the wafer guide and then moving the wafer pedestal and the wafer guide relatively up and down to return to the wafer pedestal, A method of rotating a wafer, wherein the wafer is rotated with different supporting portions of the wafer in the wafer cradle.
前記ウエハ受台とウエハガイドとの間のウエハの受け渡しは、前記ウエハガイドが上昇することで、前記ウエハ受台からウエハガイドに前記ウエハが保持され、前記ウエハガイドが下降することで前記ウエハ受台にウエハが戻ることを特徴とする、請求項5に記載のウエハ回転方法。
The wafer is transferred between the wafer cradle and the wafer guide by lifting the wafer guide so that the wafer is held from the wafer cradle to the wafer guide, and by lowering the wafer guide. 6. The wafer rotation method according to claim 5, wherein the wafer returns to the stage.
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JP6399372B1 (en) * 2017-10-30 2018-10-03 株式会社Ecp Wafer cleaning apparatus and wafer cleaning method
CN110911302A (en) * 2018-09-14 2020-03-24 胜高股份有限公司 Wafer cleaning device and cleaning method
CN111640692B (en) * 2020-04-26 2023-10-10 西安奕斯伟材料科技股份有限公司 Cleaning auxiliary device and cleaning device for wafer
CN113063272B (en) * 2021-04-14 2023-11-17 创微微电子(常州)有限公司 Wafer drying groove, wafer drying method and wafer drying device
KR20230159179A (en) * 2022-05-13 2023-11-21 에스케이실트론 주식회사 Wafer cleaning apparatus and cleaning method thereof
KR102598146B1 (en) * 2022-11-15 2023-11-06 에스케이실트론 주식회사 Wafer cleaning apparatus

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TW201426847A (en) 2014-07-01
JP2014093388A (en) 2014-05-19

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