JP5303818B2 - Organic electroluminescent display panel and manufacturing method thereof - Google Patents

Organic electroluminescent display panel and manufacturing method thereof Download PDF

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JP5303818B2
JP5303818B2 JP2001283280A JP2001283280A JP5303818B2 JP 5303818 B2 JP5303818 B2 JP 5303818B2 JP 2001283280 A JP2001283280 A JP 2001283280A JP 2001283280 A JP2001283280 A JP 2001283280A JP 5303818 B2 JP5303818 B2 JP 5303818B2
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display panel
organic
display electrode
display
organic electroluminescent
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JP2003091246A (en
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信逸 竹橋
博司 筒
成浩 諸沢
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/123Connection of the pixel electrodes to the thin film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment

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  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Description

本発明は、電流の注入によって発光する有機化合物材料のエレクトロルミネッセンス(以下、ELという)を利用して、有機EL材料の薄膜からなる発光層を備えた有機EL素子をマトリクス状に配置した有機ELディスプレイパネルに関するものである。  The present invention uses an organic EL material electroluminescence (hereinafter referred to as EL) that emits light by current injection, and is an organic EL device in which organic EL elements having a light emitting layer made of a thin film of an organic EL material are arranged in a matrix. It relates to a display panel.

近年、携帯端末、モバイルPC、携帯電話等の表示デバイスとして有機ELディスプレイが有望視されている。有機ELディスプレイは画素自身が自己発光方式のためバックライトが不要でかつ、カラーフィルタを用いずにフルカラー表示が可能なため、広視野角、高コントラスト、優れた色再現性といった特長を持ち、加えて高輝度、薄型、応答特性に優れるなどの特性を備えていることから、携帯電話やPDA(携帯情報端末)向けに各社で開発が盛んに行われている。  In recent years, organic EL displays are promising as display devices such as mobile terminals, mobile PCs, and mobile phones. The organic EL display is self-luminous, so no backlight is required and full color display is possible without using a color filter, so it has features such as a wide viewing angle, high contrast, and excellent color reproducibility. Because of its high brightness, thinness, and excellent response characteristics, it has been actively developed by various companies for mobile phones and PDAs (personal digital assistants).

有機ELディスプレイは例えば特開平9−115672号公報や特開平8−227276号公報に記載されているように、マトリクス状に配置された個々の画素電極上に有機電界発光素子(以下、有機EL素子と称する)を形成し、画素電極に加えた電圧により陰極から電子を注入しかつ陽極からホールを注入し、電子とホールの再結合により発光をさせ、表示を行うものであり、この発光は、有機電界発光材料層を挟んで陰極と陽極とが重なり合う部分で生じるものである。  For example, as described in JP-A-9-115672 and JP-A-8-227276, an organic EL display has an organic electroluminescent element (hereinafter referred to as an organic EL element) on individual pixel electrodes arranged in a matrix. In this case, electrons are injected from the cathode by a voltage applied to the pixel electrode and holes are injected from the anode, and light is emitted by recombination of the electrons and holes, and display is performed. This occurs at the portion where the cathode and the anode overlap with the organic electroluminescent material layer in between.

図4に従来における有機ELディスプレイパネルの構成を示す。  FIG. 4 shows a configuration of a conventional organic EL display panel.

透明基板であるガラス基板30上にはマトリクス状に並置配列されたインジウム錫酸化物(ITO)から成るの複数の島状の透明電極31と、この透明電極31に接続された非線形素子32、たとえば互いに接続された薄膜トランジスタ(TFT)がフォトリソグラフィや真空蒸着技術などによって形成されている。非線形素子上には平坦化のため感光性樹脂による平坦化膜39が数ミクロン形成され、平坦化膜39をフォトリソグラフィーによって開口した開口部から非線形素子32と透明電極31が電気的に接続されている。平坦化膜39と透明電極31上には感光性樹脂から成る突起38が形成されている。陽極となる透明電極31上にはホール輸送層33、発光層34及び電子輸送層35の有機媒体が薄膜で形成され、最上層には陰極36である金属薄膜が形成されている。これらの薄膜は例えば真空蒸着法で順次成膜されたもので、陽極である透明電極31と陰極36との間に直流電圧を選択的に印加することによって、透明電極31から注入されたホールがホール輸送層33を経て、また陰極36から注入された電子が電子輸送層35を経て、それぞれ発光層34に到達して電子とホールの再結合が生じ、ここから所定波長の発光37が生じ、透明基板30の側から発光表示ができるものである。また、このとき、赤(37-R)、緑(37-G)、青(37-B)の各色に発光物質が異なる発光層34をそれぞれ個々に透明電極31上に並置配置形成することによりフルカラー表示を行うことが可能となる。  On the glass substrate 30 which is a transparent substrate, a plurality of island-shaped transparent electrodes 31 made of indium tin oxide (ITO) arranged side by side in a matrix and a non-linear element 32 connected to the transparent electrode 31, for example, Thin film transistors (TFTs) connected to each other are formed by photolithography, vacuum deposition technique, or the like. A planarizing film 39 made of a photosensitive resin is formed on the nonlinear element for planarization by several microns, and the nonlinear element 32 and the transparent electrode 31 are electrically connected through an opening in which the planarizing film 39 is opened by photolithography. Yes. On the planarizing film 39 and the transparent electrode 31, a projection 38 made of a photosensitive resin is formed. On the transparent electrode 31 to be the anode, an organic medium of a hole transport layer 33, a light emitting layer 34 and an electron transport layer 35 is formed as a thin film, and a metal thin film which is a cathode 36 is formed in the uppermost layer. These thin films are sequentially formed by, for example, a vacuum deposition method. By selectively applying a direct current voltage between the transparent electrode 31 serving as the anode and the cathode 36, holes injected from the transparent electrode 31 are formed. Electrons injected from the cathode 36 through the hole transport layer 33 and the electron transport layer 35 reach the light-emitting layer 34 to cause recombination of electrons and holes, respectively, thereby generating light emission 37 having a predetermined wavelength, Light emission can be displayed from the transparent substrate 30 side. At this time, the light emitting layers 34 having different light emitting materials for red (37-R), green (37-G), and blue (37-B) are individually arranged in parallel on the transparent electrode 31. Full color display can be performed.

次に図5、図6にELディスプレイパネルの製造方法を示す。  Next, FIGS. 5 and 6 show a method for manufacturing an EL display panel.

図5(a)においてガラス基板30上にはマトリクス状に配置した非線形素子32が形成される。非線形素子32はフォトリソグラフィーや真空蒸着法により形成する。  In FIG. 5A, nonlinear elements 32 arranged in a matrix are formed on a glass substrate 30. The nonlinear element 32 is formed by photolithography or vacuum evaporation.

非線形素子32上には非線形素子形成による凹凸を緩和するための平坦化膜39を形成し、平坦化膜39上には非線形素子32と電気的に接続するインジウム錫酸化物(ITO)から成る透明電極31を形成する。そのために平坦化膜39の一部には開口部が設けられている。  A flattening film 39 is formed on the non-linear element 32 to relieve unevenness due to the formation of the non-linear element, and a transparent film made of indium tin oxide (ITO) electrically connected to the non-linear element 32 is formed on the flattening film 39. The electrode 31 is formed. Therefore, an opening is provided in a part of the planarizing film 39.

図5(b)において平坦化膜39および透明電極31上に感光性樹脂による突起40をフォトリソグラフィー法により形成する。この突起40は後のマスク蒸着工程で有機EL層を形成する際に成膜用マスクが透明電極31および、形成した有機EL層と接触することによる損傷を防止するために形成される。突起40の厚みは0.5〜10ミクロンである。  In FIG. 5B, a projection 40 made of a photosensitive resin is formed on the planarizing film 39 and the transparent electrode 31 by a photolithography method. The protrusion 40 is formed in order to prevent damage caused by the film formation mask coming into contact with the transparent electrode 31 and the formed organic EL layer when the organic EL layer is formed in a subsequent mask vapor deposition step. The protrusion 40 has a thickness of 0.5 to 10 microns.

図5(c)において個々の透明電極31にホール輸送層33となる有機媒体を形成し、さらにその上に発光層34、電子輸送層35を順次形成する(図5(d)、図6(a))。なお、発光層34は赤(R)、緑(G)、青(B)の各色に発光物質が異なる個々の発光層34−R、34−G、34−Bを並置配置するよう形成される。  5C, an organic medium to be the hole transport layer 33 is formed on each transparent electrode 31, and a light emitting layer 34 and an electron transport layer 35 are sequentially formed thereon (FIG. 5D and FIG. 6). a)). The light emitting layer 34 is formed so that individual light emitting layers 34-R, 34-G, and 34-B having different light emitting substances for each color of red (R), green (G), and blue (B) are juxtaposed. .

次に図6(b)において、ホール輸送層33、発光層35、電子輸送層を覆うようにAlからなる陰極36を形成する。最後に、これら有機EL層を、湿度の影響による特性劣化を防ぐため、封止するというものであった。  Next, in FIG. 6B, a cathode 36 made of Al is formed so as to cover the hole transport layer 33, the light emitting layer 35, and the electron transport layer. Finally, these organic EL layers were sealed in order to prevent characteristic deterioration due to the influence of humidity.

発明が解決しようとする課題Problems to be solved by the invention

上記のように発光物質が異なる有機発光層をマトリクス状に並置配置された非線形素子の透明電極上に配置形成することにより自己発光のフルカラー有機ELディスプレイを実現することが可能であるが、その際下記の課題が生じる。  As described above, it is possible to realize a self-luminous full-color organic EL display by arranging and forming organic light-emitting layers having different light-emitting substances on transparent electrodes of nonlinear elements arranged in a matrix. The following issues arise.

透明電極は蒸着法によって形成され、膜厚数ミクロンの厚さの平坦化膜の開口部を介して非線形素子と接続されている。このため、透明電極表面は平坦化膜の開口部に沿った凹部を有しているため、透明電極上に形成される有機EL層(ホール輸送層、発光層、電子輸送層)が平坦化膜開口部のショルダー部のエッジ部での段切れが生じ、これによって陽極である透明電極と陰極層間にショートが生じ、画素単位での非点灯画素不良が発生することがある。また、同様に平坦化膜ショルダー部のエッジ部領域で有機EL層(ホール輸送層、発光層、電子輸送層)の膜厚が極端に薄くなることにより、陽極と陰極間に低抵抗化によるリークパスが発生し、これにより有機EL層(ホール輸送層、発光層、電子輸送層)を形成した領域全体の発光が困難となり、発光面積が著しく減少することによる発光面積当りの電流密度が上昇する。これにより有機EL層(ホール輸送層、発光層、電子輸送層)の劣化による輝度低下や、時間経過に伴う非点灯領域が増大するなど表示信頼性が著しく低下するという問題点がある。  The transparent electrode is formed by a vapor deposition method, and is connected to the nonlinear element through an opening of a planarizing film having a thickness of several microns. For this reason, since the surface of the transparent electrode has a recess along the opening of the planarization film, the organic EL layer (hole transport layer, light emitting layer, electron transport layer) formed on the transparent electrode is a planarization film. A step breakage occurs at the edge portion of the shoulder portion of the opening, and this may cause a short circuit between the transparent electrode as the anode and the cathode layer, resulting in a non-lighting pixel defect in pixel units. Similarly, the organic EL layer (hole transport layer, light-emitting layer, electron transport layer) becomes extremely thin in the edge region of the flattening film shoulder, thereby causing a leak path due to low resistance between the anode and the cathode. As a result, it becomes difficult to emit light in the entire region where the organic EL layer (hole transport layer, light emitting layer, electron transport layer) is formed, and the current density per light emitting area increases due to a significant decrease in the light emitting area. As a result, there is a problem in that the display reliability is remarkably lowered, such as a decrease in luminance due to deterioration of the organic EL layer (hole transport layer, light emitting layer, electron transport layer) and an increase in the non-lighting area with time.

本発明の目的は、かかる問題点を解消するべく簡素な構成で非点灯画素による画素欠陥を低減し、経時的な輝度低下、画素欠陥の発生を皆無にし、歩留まりが高く、信頼性に優れた有機ELディスプレイパネルを提供することにある。  An object of the present invention is to reduce pixel defects due to non-lighted pixels with a simple configuration so as to eliminate such problems, to eliminate luminance deterioration over time and generation of pixel defects, and to achieve high yield and excellent reliability. The object is to provide an organic EL display panel.

課題を解決するための手段Means for solving the problem

本発明はマトリクス状に配置された透明電極と非線形素子とのコンタクト部分、すなわち平坦化膜の開口部を絶縁体層あるいは導電体層で覆い、平坦化膜の開口部をなだらかな構成にすることにより、有機EL層(ホール輸送層、発光層、電子輸送層)の段切れによる陽極と陰極間のショートおよび、有機EL層(ホール輸送層、発光層、電子輸送層)の膜厚が薄くなることによる陽極と陰極間の電流リークを防止するものである。これにより、非点灯画素による画素欠陥、経時的な輝度低下、表示領域の輝度バラツキを低減させ、製造歩留まりが高く、信頼性に優れた有機ELディスプレイパネルを実現、提供できる。  According to the present invention, a contact portion between a transparent electrode and a nonlinear element arranged in a matrix, that is, an opening portion of a planarizing film is covered with an insulating layer or a conductor layer, and the opening portion of the planarizing film is made to have a gentle structure. As a result, the short circuit between the anode and the cathode due to the disconnection of the organic EL layer (hole transport layer, light emitting layer, electron transport layer) and the film thickness of the organic EL layer (hole transport layer, light emitting layer, electron transport layer) become thin. This prevents current leakage between the anode and the cathode. Accordingly, it is possible to realize and provide an organic EL display panel having a high manufacturing yield and high reliability by reducing pixel defects due to non-lighted pixels, a decrease in luminance with time, and a luminance variation in the display area.

以下に本発明における実施例について図面を用いて説明する。  Embodiments of the present invention will be described below with reference to the drawings.

(第一の実施例)
図1は本発明における第一の実施例の有機ELディスプレイの断面構成を示したものである。
(First embodiment)
FIG. 1 shows a cross-sectional configuration of an organic EL display according to the first embodiment of the present invention.

透明基板であるガラス基板1上にはマトリクス状に並置配列された非線形素子である薄膜トランジスタ3がフォトリソグラフィや真空蒸着技術などによって形成されている。非線形素子には、必要に応じてコンデンサや配線が接続されており、これらを含めて非線形素子回路と呼ぶ。そして薄膜トランジスタ3を含む非線形素子回路上には薄膜トランジスタ3自身の膜厚による凹凸を緩和するため平坦化膜4が形成塗布されている。平坦化膜4は感光性樹脂でフォトリソグラフィーによって形成され、形成膜厚は数ミクロンである。そして平坦化膜4にはフォトリソグラフィーによって開口された開口部7をを設け、この開口部7を介して薄膜トランジスタ3のドレイン電極5と電気的に接続された透明電極2が形成されている。この透明電極2は薄膜トランジスタ3と一対で形成され、薄膜トランジスタ3と同様にガラス基板1上にマトリクス状に並置配列される。また、この透明電極2はインジウム錫酸化物(ITO)等の仕事関数が小さい材料を用いて形成され、後の工程で形成される有機EL層の陽極(アノード電極)となる。  On a glass substrate 1 which is a transparent substrate, a thin film transistor 3 which is a nonlinear element arranged in a matrix is formed by photolithography or vacuum deposition technique. Capacitors and wirings are connected to the nonlinear element as necessary, and these are referred to as a nonlinear element circuit. A planarizing film 4 is formed and applied on the nonlinear element circuit including the thin film transistor 3 in order to reduce unevenness due to the film thickness of the thin film transistor 3 itself. The planarizing film 4 is formed of a photosensitive resin by photolithography, and the formed film thickness is several microns. The planarizing film 4 is provided with an opening 7 opened by photolithography, and the transparent electrode 2 electrically connected to the drain electrode 5 of the thin film transistor 3 is formed through the opening 7. The transparent electrode 2 is formed as a pair with the thin film transistor 3, and is arranged side by side in a matrix on the glass substrate 1 as with the thin film transistor 3. The transparent electrode 2 is formed using a material having a small work function, such as indium tin oxide (ITO), and serves as an anode (anode electrode) of an organic EL layer formed in a later step.

また、透明電極の上には絶縁樹脂による突起6が設けられる。この突起6は以降のマスク蒸着工程で有機EL層を蒸着形成する際に成膜用マスクが透明電極2および、形成された有機EL層と接触し、これらが損傷するのを防止するために形成されるものである。なお、この突起6は感光性を有した絶縁樹脂であり、平坦化膜4と同材料を用いて形成できるものである。  A projection 6 made of an insulating resin is provided on the transparent electrode. The protrusion 6 is formed in order to prevent the film formation mask from coming into contact with the transparent electrode 2 and the formed organic EL layer when the organic EL layer is formed by vapor deposition in the subsequent mask vapor deposition process, and damaging them. It is what is done. The projection 6 is an insulating resin having photosensitivity, and can be formed using the same material as the planarizing film 4.

さらには、透明電極2と薄膜トランジスタ3のドレイン電極5と接続コンタクトする平坦化膜4の開口部7は開口部全体を覆うように絶縁樹脂による開口部の穴埋め8がなされている。穴埋め8は平坦化膜4や突起6と同様に同材料を用いて形成できる。有機EL層の陽極となる透明電極2上にはホール輸送層9、発光層10及び電子輸送層11の有機媒体が薄膜で順次形成されている。そしてこれら有機EL層9、10、11を覆うように陰極12となる金属薄膜が最上層に形成されている。この陰極12はAl等の金属材料を蒸着法等によって形成する。また、この陰極12は発光層10で発光した光をガラス基板1側に反射させ、発光効率を増大する目的もある。また、反射をより確実にするために、さらに別の反射膜を形成することもできる。これらの薄膜は例えば真空蒸着法で順次成膜されるもので、陽極である透明電極2と陰極12との間に直流電圧を選択的に印加することによって、透明電極2から注入されたホールがホール輸送層9を経て、また陰極12から注入された電子が電子輸送層11を経て、それぞれ発光層10に到達して電子とホールの再結合が生じ、ここから所定波長の発光が生じ、ガラス基板1の側から発光表示ができるものである。  Further, the opening 7 of the planarization film 4 that is connected to the transparent electrode 2 and the drain electrode 5 of the thin film transistor 3 is filled with an opening 8 with an insulating resin so as to cover the entire opening. The hole filling 8 can be formed using the same material as the planarizing film 4 and the protrusion 6. On the transparent electrode 2 serving as an anode of the organic EL layer, organic media of a hole transport layer 9, a light emitting layer 10, and an electron transport layer 11 are sequentially formed as a thin film. And the metal thin film used as the cathode 12 is formed in the uppermost layer so that these organic EL layers 9,10,11 may be covered. The cathode 12 is formed of a metal material such as Al by vapor deposition or the like. The cathode 12 also has the purpose of reflecting the light emitted from the light emitting layer 10 toward the glass substrate 1 to increase the light emission efficiency. Further, in order to make the reflection more reliable, another reflective film can be formed. These thin films are sequentially formed by, for example, a vacuum deposition method. By selectively applying a DC voltage between the transparent electrode 2 as the anode and the cathode 12, holes injected from the transparent electrode 2 are formed. Electrons injected from the cathode 12 through the hole transport layer 9 and the electron transport layer 11 reach the light-emitting layer 10 to cause recombination of electrons and holes, and light emission of a predetermined wavelength occurs from the glass. Light emission can be displayed from the substrate 1 side.

また、発光した光を上方すなわち陰極12側へ取り出す構成も可能で、この場合は陰極12を透明電極とする。そして、陽極側へ出る光を反射させるために、陽極の外側(発光層と反対側)に反射膜を設ける。  Further, it is possible to take out the emitted light upward, that is, toward the cathode 12 side. In this case, the cathode 12 is a transparent electrode. And in order to reflect the light which goes out to an anode side, a reflecting film is provided in the outer side (opposite side of a light emitting layer) of an anode.

なお、上記実施例での非線形素子は透明電極2上に形成された有機EL層9、10、11に加わる電流を制御し、発光層10を発光させるものでこれに用いられる非線形素子としてはp−Si、a−Si、CdSe、Te等の薄膜トランジスタを用いることができ、またMOS−FETを用いた回路も用いることが可能である。さらに、3端子タイプではなく、2端子タイプのMIMなどを用いた回路構成にすることも可能である。  The nonlinear element in the above embodiment controls the current applied to the organic EL layers 9, 10 and 11 formed on the transparent electrode 2 and causes the light emitting layer 10 to emit light. The nonlinear element used for this is p. Thin film transistors such as -Si, a-Si, CdSe, and Te can be used, and a circuit using a MOS-FET can also be used. Further, a circuit configuration using a two-terminal type MIM instead of the three-terminal type is also possible.

次に、本発明における第1の実施例の有機ELディスプレイパネルの製造方法を図面を用いてに説明する。  Next, a method of manufacturing the organic EL display panel according to the first embodiment of the present invention will be described with reference to the drawings.

図2(a)において、ガラス基板1上に非線形素子である薄膜トランジス3とゲートライン、ゲート絶縁膜、チャネル層、コンタクト層、ソース、ドレインライン、信号線等(図示せず)をマトリクス状に配置形成し、薄膜トランジスタ3上に平坦化膜4を形成し、平坦化膜4上には平坦化膜4の開口部7を介して薄膜トランジスタ3のドレイン電極5と電気的に接続したITOから成る透明電極2を500〜1500オングストロームの膜厚で形成する。この透明電極2は後の有機EL層の陽極(アノード)となるものでインジウム錫酸化物(ITO)等の仕事関数が小さい材料が用いられる。  In FIG. 2A, a thin film transistor 3 which is a non-linear element and a gate line, a gate insulating film, a channel layer, a contact layer, a source, a drain line, a signal line, etc. (not shown) are arranged in a matrix on a glass substrate 1. The flattening film 4 is formed and formed on the thin film transistor 3, and the transparent film made of ITO electrically connected to the drain electrode 5 of the thin film transistor 3 through the opening 7 of the flattening film 4 is formed on the flattening film 4. The electrode 2 is formed with a film thickness of 500-1500 angstroms. This transparent electrode 2 will be an anode (anode) of the later organic EL layer, and a material having a small work function such as indium tin oxide (ITO) is used.

図2(b)において、レジストあるいは感光性ポリイミド樹脂等で透明電極2上に絶縁性の突起6をフォトリソグラフィーによって形成する。この突起6の高さは透明電極2の表面や、後の有機EL層を成膜する際の成膜用マスク(図示せず)が突起6に突き合わされた際に成膜用マスクで既に成膜された有機EL媒体を傷つけない程度の高さ(0.5μm以上)を有しておれば良い。一方、突起6が高すぎても壊れやすくなるので10μm以下程度、できれば1〜2μm程度が望ましい。更に、その後の工程で成摸する陰極が突起6のテーパー角度によって断線しないように、突起6の断面が略台形の形状になることが望ましい。このときのテーパー角度は60度以下が望ましい。このようにマトリクス状に並置された突起6は、ガラスペーストの光吸収性物質を塗布するスクリーン印刷法によっても形成することもできる。また突起6の平面形状は、長方形底面の壁となるように形成しているが、正方形、円形などその形状は如何なるものでも良い。なお、この突起6は平坦化膜4と同材料で形成することもできる。  In FIG. 2B, an insulating protrusion 6 is formed on the transparent electrode 2 by photolithography using a resist or a photosensitive polyimide resin. The height of the projection 6 is already formed on the surface of the transparent electrode 2 and the film-forming mask when a film-forming mask (not shown) for forming a later organic EL layer is abutted against the protrusion 6. It is only necessary to have a height (0.5 μm or more) that does not damage the filmed organic EL medium. On the other hand, even if the protrusion 6 is too high, it is easily broken, so it is preferably about 10 μm or less, preferably about 1 to 2 μm. Further, it is desirable that the cross section of the protrusion 6 has a substantially trapezoidal shape so that the cathode grown in the subsequent process does not break due to the taper angle of the protrusion 6. The taper angle at this time is preferably 60 degrees or less. Thus, the protrusions 6 arranged in a matrix can also be formed by a screen printing method in which a light-absorbing substance of glass paste is applied. The planar shape of the protrusion 6 is formed to be a rectangular bottom wall, but any shape such as a square or a circle may be used. The protrusion 6 can also be formed of the same material as the planarizing film 4.

次に図2(c)において、透明電極2と薄膜トランジスタ3のドレイン電極5とを電気的に接続している平坦化膜4の開口部7を覆うように絶縁性を有する材料で開口部の穴埋め8を行う。この開口部の穴埋め8は平坦化膜4や突起6と同材料で形成できる。また、フォトリソグラフィのマスクを共通化することにより突起6と同時に形成できるものである。さらにはSiO2やSiNx等の無機材料を用いることも可能である。  Next, in FIG. 2C, the opening is filled with an insulating material so as to cover the opening 7 of the planarizing film 4 that electrically connects the transparent electrode 2 and the drain electrode 5 of the thin film transistor 3. 8 is performed. The hole filling 8 in the opening can be formed of the same material as the planarizing film 4 and the protrusion 6. Further, by using a common photolithography mask, it can be formed simultaneously with the protrusion 6. Furthermore, it is also possible to use inorganic materials such as SiO2 and SiNx.

次に図2(d)において有機EL層の陽極となる透明電極2上にはホール輸送層9を、次に図3(a)に示すようにホール輸送層9上に発光層10を、次に図3(b)に示すように発光層10上に電子輸送層11を、画素毎に開口部を有する成膜用マスクを介して薄膜で順次形成する。  Next, in FIG. 2 (d), the hole transport layer 9 is formed on the transparent electrode 2 serving as the anode of the organic EL layer, and the light emitting layer 10 is then formed on the hole transport layer 9 as shown in FIG. 3 (a). As shown in FIG. 3B, the electron transport layer 11 is sequentially formed as a thin film on the light emitting layer 10 through a film formation mask having an opening for each pixel.

そして図3(c)において、これら有機EL層9、10、11を覆うように陰極(カソード)12となる金属薄膜を形成する。この陰極12はAl等の金属材料を蒸着法等によって形成するものである。その後、透明電極2上に形成した有機EL層9、10、11の湿度による特性劣化および物質的劣化による発光特性低下や非点灯画素の欠陥の発生を防止するため、ガラス板等を樹脂接着して封止が行われ(図示せず)、有機ELディスプレイパネルが実現できるものである。なお、平坦化膜の開口部の穴埋めには前記したように感光性を有する絶縁樹脂の他にSiO2やSiNx等の無機材料を用いることも可能である。また、ペースト状のスクリーン印刷印刷法によっても形成が可能である。  In FIG. 3C, a metal thin film that becomes the cathode (cathode) 12 is formed so as to cover these organic EL layers 9, 10, and 11. The cathode 12 is formed by depositing a metal material such as Al by vapor deposition. Thereafter, a glass plate or the like is bonded to the organic EL layers 9, 10, 11 formed on the transparent electrode 2 with a resin in order to prevent deterioration of light emission characteristics due to humidity and material deterioration and generation of defects in non-lighting pixels. Sealing is performed (not shown), and an organic EL display panel can be realized. In addition, as described above, an inorganic material such as SiO2 or SiNx can be used for filling the opening of the planarizing film in addition to the insulating resin having photosensitivity. It can also be formed by a paste-like screen printing method.

なお、赤、緑、青など発光色の異なる発光層10を形成する際には、同一の開口マスクを色ごとに1画素ずつずらして成膜することにより、マスクの種類を増やさずに成膜できる。  When forming the light emitting layer 10 having different emission colors such as red, green, and blue, the same opening mask is formed by shifting one pixel at a time for each color, so that the film types are not increased. it can.

(第2の実施例)
また、第2の実施例として、第1実施例では平坦化膜4の開口部7の穴埋め8は突起6と個別の工程で形成されるが、突起6と平坦化膜4の開口部7の穴埋め8は同じ材料を用いることができるため、突起6を形成する工程で平坦化膜4の開口部7の穴埋め8を同時に行うことも可能である。
(Second embodiment)
Further, as a second embodiment, in the first embodiment, the filling 8 of the opening 7 of the planarizing film 4 is formed in a separate process from the protrusion 6, but the protrusion 6 and the opening 7 of the planarizing film 4 are formed. Since the same material can be used for the hole filling 8, it is possible to simultaneously fill the hole 8 in the opening 7 of the planarizing film 4 in the step of forming the protrusion 6.

(第3の実施例)
また、第3の実施例として平坦化膜4の開口部7の穴埋め8をインジウム錫酸化物(ITO)やアルミ等の導電体の材料を用いることも可能である。
(Third embodiment)
As a third embodiment, a conductive material such as indium tin oxide (ITO) or aluminum can be used for filling the opening 8 in the opening 7 of the planarizing film 4.

(第4の実施例)
さらには第4の実施例として透明電極2上の突起6を形成せず、平坦化膜4の開口部7の穴埋め8のみを形成して、穴埋め8に突起6の作用を受け持たせることによって、有機EL層(ホール輸送層9、発光層10、電子輸送層11)を成膜時、成膜用マスクが透明電極2および、形成された有機EL層と接触し、損傷を防止ことも可能である。そのときの平坦化膜4の開口部7の穴埋め8は導電体層あるいは絶縁体層いずれを用いても良い。なお、その際の平坦化膜4の開口部7の穴埋め8の高さ、膜厚は有機EL成膜用マスクで透明電極2および、既に成膜された有機EL媒体を傷つけない程度の高さ(0.5μm以上)を有しておれば良い。
(Fourth embodiment)
Further, as the fourth embodiment, the protrusion 6 on the transparent electrode 2 is not formed, but only the hole filling 8 of the opening 7 of the flattening film 4 is formed, and the hole filling 8 has the function of the protrusion 6. When forming an organic EL layer (hole transport layer 9, light emitting layer 10, electron transport layer 11), the film formation mask is in contact with the transparent electrode 2 and the formed organic EL layer, and damage can be prevented. It is. At that time, the hole filling 8 in the opening 7 of the planarizing film 4 may use either a conductor layer or an insulator layer. At this time, the height and thickness of the hole filling 8 of the opening 7 of the planarizing film 4 are high enough not to damage the transparent electrode 2 and the already formed organic EL medium with the organic EL film forming mask. (0.5 μm or more) is sufficient.

発明の効果Effect of the invention

透明電極上に形成される平坦化膜の開口部が絶縁体層あるいは導電体層で埋込まれているので平坦化膜表面の凹凸が緩和され、有機EL層(ホール輸送層、発光層、電子輸送層)が平坦化膜開口部のエッジで段切れが生じなくなり、画素単位でのEL発光が伴わない非点灯不良を防止できる。また、平坦化膜開口部のエッジ領域において有機EL層(ホール輸送層、発光層、電子輸送層)の膜厚が極端に薄くなることによるリークパスが生じないため、時間経過に伴う非点灯領域の拡大や消費電力の増加を防止でき、有機ELパネルの製造歩留まりが高く、信頼性に優れた高画質で低消費電力な有機ELディスプレイパネルを簡素な構成で実現することが可能となる。  Since the opening of the planarization film formed on the transparent electrode is filled with an insulator layer or a conductor layer, the unevenness of the planarization film surface is alleviated, and an organic EL layer (hole transport layer, light emitting layer, electron) The transport layer is not cut off at the edge of the planarization film opening, and non-lighting failure that does not involve EL light emission in pixel units can be prevented. In addition, the leakage path due to the extremely thin film thickness of the organic EL layer (hole transport layer, light emitting layer, electron transport layer) does not occur in the edge region of the planarization film opening. It is possible to prevent enlargement and increase in power consumption, achieve a high production yield of organic EL panels, and realize an organic EL display panel with high reliability and high image quality and low power consumption with a simple configuration.

本発明の一実施例である有機ELディスプレイの構造断面図Cross-sectional view of the structure of an organic EL display which is an embodiment of the present invention 本発明の一実施例である有機ELディスプレイの製造工程を示す工程断面図  Process sectional drawing which shows the manufacturing process of the organic electroluminescent display which is one Example of this invention 本発明の一実施例である有機ELディスプレイの製造工程を示す工程断面図  Process sectional drawing which shows the manufacturing process of the organic electroluminescent display which is one Example of this invention 本発明の従来例である有機ELディスプレイの断面構造図  Cross-sectional structure diagram of an organic EL display which is a conventional example of the present invention 本発明の従来例である有機ELディスプレイの製造工程を示す工程断面図  Process sectional drawing which shows the manufacturing process of the organic electroluminescent display which is the prior art example of this invention 本発明の従来例である有機ELディスプレイの製造工程を示す工程断面図  Process sectional drawing which shows the manufacturing process of the organic electroluminescent display which is the prior art example of this invention

1 ガラス基板
2 透明電極
3 薄膜トランジスタ
4 平坦化膜
5 ドレイン電極
6 突起
7 開口部
8 開口部の穴埋め
9 ホール輸送層
10 発光層
11 電子輸送層
12 陰極
DESCRIPTION OF SYMBOLS 1 Glass substrate 2 Transparent electrode 3 Thin-film transistor 4 Flattening film 5 Drain electrode 6 Protrusion 7 Opening 8 Opening filling 9 Hole transport layer 10 Light emitting layer 11 Electron transport layer 12 Cathode

Claims (12)

マトリクス状に配置された複数の非線形素子回路と発光部からなる画像表示配列を有している有機エレクトロルミネッセンスディスプレイパネルであって、前記非線形素子回路と電気的に接続された前記発光部に対応する第1の表示電極がマトリクス状に表面上に形成された透明基板において、前記非線形素子回路上に形成され、コンタクト領域を開口した絶縁膜と、前記第1の表示電極上に突出する電気絶縁性を有した突起と、前記非線形素子回路と前記第1の表示電極とのコンタクト領域を覆うようにして絶縁体が形成され、前記絶縁体の上面全体を覆うように形成されると共に、前記第1の表示電極上に形成された少なくとも1層の有機エレクトロルミネッセンス媒体の薄膜と、前記有機エレクトロルミネッセンス媒体の薄膜の上に共通に形成された第2の表示電極と、を有し、前記突起は隣り合う前記発光部にそれぞれ位置する前記薄膜を区画し、前記絶縁体の上面は前記突起の上面よりも低い位置に位置することを特徴とする有機エレクトロルミネッセンスディスプレイパネル。
An organic electroluminescence display panel having an image display arrangement composed of a plurality of nonlinear element circuits arranged in a matrix and a light emitting part, corresponding to the light emitting part electrically connected to the nonlinear element circuit In a transparent substrate having a first display electrode formed on a surface in a matrix, an insulating film formed on the nonlinear element circuit and having an opening in a contact region, and an electric insulation projecting on the first display electrode An insulator is formed so as to cover a contact region between the protrusion having the contact point and the non-linear element circuit and the first display electrode, and is formed so as to cover the entire top surface of the insulator. A thin film of at least one organic electroluminescent medium formed on the display electrodes of the organic electroluminescent medium and a thin film of the organic electroluminescent medium. And a second display electrode formed on the protrusions divides the thin film respectively positioned to the light emitting portion adjacent the upper surface of the insulator is located at a position lower than the upper surface of the projection An organic electroluminescence display panel characterized by that.
マトリクス状に配置された複数の非線形素子回路と発光部からなる画像表示配列を有している有機エレクトロルミネッセンスディスプレイパネルであって、前記非線形素子回路と電気的に接続された前記発光部に対応する第1の表示電極がマトリクス状に表面上に形成された透明基板において、前記非線形素子回路上に形成され、コンタクト領域を開口した絶縁膜と、前記第1の表示電極上に突出する電気絶縁性を有した突起と、前記非線形素子回路と前記第1の表示電極とのコンタクト領域を覆うようにして導電体が形成され、前記導電体の上面全体を覆うように形成されると共に、前記第1の表示電極上に形成された少なくとも1層の有機エレクトロルミネッセンス媒体の薄膜と、前記有機エレクトロルミネッセンス媒体の薄膜の上に共通に形成された第2の表示電極とからなることを特徴とする有機エレクトロルミネッセンスディスプレイパネル。
An organic electroluminescence display panel having an image display arrangement composed of a plurality of nonlinear element circuits arranged in a matrix and a light emitting part, corresponding to the light emitting part electrically connected to the nonlinear element circuit In a transparent substrate having a first display electrode formed on a surface in a matrix, an insulating film formed on the nonlinear element circuit and having an opening in a contact region, and an electric insulation projecting on the first display electrode And a conductor is formed so as to cover a contact region between the protrusion having the contact point and the non-linear element circuit and the first display electrode, and is formed so as to cover the entire top surface of the conductor. A thin film of at least one organic electroluminescent medium formed on the display electrodes of the organic electroluminescent medium and a thin film of the organic electroluminescent medium. The organic electroluminescent display panel, characterized in that and a second display electrode formed.
マトリクス状に配置された複数の非線形素子回路と発光部からなる画像表示配列を有している有機エレクトロルミネッセンスディスプレイパネルであって、前記非線形素子回路と電気的に接続された前記発光部に対応する第1の表示電極がマトリクス状に表面上に形成された透明基板において、前記非線形素子回路上に形成され、コンタクト領域を開口した絶縁膜と、前記非線形素子回路と前記第1の表示電極とのコンタクト領域を覆うようにして導電体が形成され、前記導電体の上面全体を覆うように形成されると共に、前記第1の表示電極上に形成された少なくとも1層の有機エレクトロルミネッセンス媒体の薄膜と、前記有機エレクトロルミネッセンス媒体の薄膜の上に共通に形成された
第2の表示電極とからなることを特徴とする有機エレクトロルミネッセンスディスプレイパネル。
An organic electroluminescence display panel having an image display arrangement composed of a plurality of nonlinear element circuits arranged in a matrix and a light emitting part, corresponding to the light emitting part electrically connected to the nonlinear element circuit In a transparent substrate having a first display electrode formed on a surface in a matrix, an insulating film formed on the nonlinear element circuit and having an opening in a contact region; the nonlinear element circuit and the first display electrode; A conductor is formed so as to cover the contact region, the conductor is formed so as to cover the entire top surface of the conductor, and a thin film of at least one organic electroluminescent medium formed on the first display electrode; And a second display electrode formed in common on the thin film of the organic electroluminescence medium. Electroluminescent display panel.
前記非線形素子回路は互いに接続された薄膜トランジスタ及びコンデンサからなることを特徴とする請求項1からのいずれか1項に記載の有機エレクトロルミネッセンスディスプレイパネル。
The non-linear element circuit of the organic electroluminescent display panel as claimed in any one of claims 1 to 3, characterized in that it consists of a thin film transistor and a capacitor which are connected to each other.
前記基板及び前記第1表示電極が透明であることを特徴とする請求項1からのいずれか1項に記載の有機エレクトロルミネッセンスディスプレイパネル。
The organic electroluminescence display panel according to any one of claims 1 to 3 , wherein the substrate and the first display electrode are transparent.
前記第2表示電極上に形成された反射膜を有することを特徴とする請求項1からのいずれか1項に記載の有機エレクトロルミネッセンスディスプレイパネル。
The organic electroluminescence display panel according to any one of claims 1 3, characterized in that it has a reflective film formed on the second display electrode.
前記第2表示電極が透明であることを特徴とする請求項1からのいずれか1項に記載の有機エレクトロルミネッセンスディスプレイパネル。
The organic electroluminescence display panel according to any one of claims 1 to 3 , wherein the second display electrode is transparent.
前記第1表示電極の外側に形成された反射膜を有することを特徴とする請求項1からのいずれか1項に記載の有機エレクトロルミネッセンスディスプレイパネル。
The organic electroluminescent display panel as claimed in any one of claims 1 to 3, characterized in that it has a reflective film formed on the outer side of the first display electrode.
前記突起が感光性樹脂であることを特徴とする請求項1または2記載の有機エレクトロルミネッセンスディスプレイパネル。
The organic electroluminescence display panel according to claim 1, wherein the protrusion is a photosensitive resin.
前記絶縁体が感光性樹脂であることを特徴とする請求項1に記載の有機エレクトロルミネッセンスディスプレイパネル。
The organic electroluminescence display panel according to claim 1, wherein the insulator is a photosensitive resin.
前記導電体が透明であることを特徴とする請求項2または記載の有機エレクトロルミネッセンスディスプレイパネル。
Claim 2 or 3 organic electroluminescent display panel according to, wherein the conductive member is transparent.
前記導電体が前記第1の表示電極と同一材料で形成されていることを特徴とする請求項記載の有機エレクトロルミネッセンスディスプレイパネル。
4. The organic electroluminescence display panel according to claim 3, wherein the conductor is made of the same material as the first display electrode.
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