JP5292217B2 - Method for manufacturing semiconductor device and method for manufacturing electronic book - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique for manufacturing a flexible semiconductor device by using a flexible substrate, such as, a resin substrate. <P>SOLUTION: The method for manufacturing a flexible display device, by using a resin substrate comprises the steps of forming the resin substrate on a fixed substrate, having a separation layer; forming at least a TFT element on the resin substrate; and peeling the resin substrate from the fixed substrate within the separation layer at an interface thereof, by irradiating the separation layer with a laser beam. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a method for manufacturing the semiconductor device. For example, the present invention relates to an electro-optical device typified by a liquid crystal display panel and an electronic apparatus in which such an electro-optical device is mounted as a component.

  Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

  In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

  Various applications using such an image display device are expected, but the use for portable devices is attracting attention. Therefore, it has been attempted to form a TFT element on a flexible plastic film.

  However, since the heat resistance of the plastic film is low, the maximum temperature of the process has to be lowered, and as a result, TFTs having better electrical characteristics cannot be formed than when formed on a glass substrate. Therefore, a high-performance liquid crystal display device using a plastic film has not been realized.

  Japanese Patent Application Laid-Open No. 8-288522 describes a technique in which a thin film transistor is formed on a glass substrate, a resin substrate is bonded via a sealing layer, and then the glass substrate is peeled off. When this technique is used, the active layer of the TFT is only protected by the base insulating film, which causes a problem that the TFT is likely to deteriorate.

  In JP-A-11-243209, a separation layer is provided, and after the separation layer is peeled off by laser light, it is bonded to the primary transfer body via the adhesive layer, and further transferred to the secondary transfer via the adhesive layer. A technique for removing the primary transfer body after joining the bodies is described. Even when this technique is used, there is a problem that the active layer of the TFT is protected only by the base insulating film during the manufacturing process, so that the TFT is easily damaged and the TFT is easily deteriorated.

  It is an object of the present invention to provide a technique for manufacturing a high-performance electro-optical device using a plastic support (including a flexible plastic film or a plastic substrate).

  In the present invention, after bonding an element forming substrate made of a plastic support on a first fixing substrate having heat resistance compared to plastic with a first adhesive layer, necessary elements are formed on the element forming substrate, The liquid crystal material is sealed and held after the second fixed substrate is bonded to the element with the second adhesive layer, and then the first fixed substrate is separated.

  Note that the necessary elements refer to semiconductor elements (typically TFTs) or MIM elements used as pixel switching elements in the case of an active matrix type electro-optical device.

  Further, the method for bonding the first fixed substrate and the element formation substrate is not particularly limited. As shown in FIG. 1, the element formation substrate is bonded after the first adhesive layer is formed on the first fixed substrate. A method or a method of bonding the first fixed substrate after forming the first adhesive layer on the element formation substrate may be used.

  In addition, as an element forming substrate made of a plastic support and a second fixed substrate, a resin substrate having a thickness of 10 μm or more, for example, PES (polyethylene sulfide), PC (polycarbonate), PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) Can be used. In addition, after forming an adhesive layer on the first fixed substrate, an organic resin layer (polyimide layer, polyamide layer, polyimideamide layer, BCB (benzocyclobutene) layer, etc.) is formed thereon to form an element It may be called a substrate.

  Further, as the element formation substrate, a metal substrate such as a stainless steel substrate can be used. In that case, a necessary element may be formed by forming a base insulating film on a metal substrate. By using a thin metal substrate (thickness of 10 to 200 μm), it is possible to obtain a reflective liquid crystal display device that can be reduced in weight and thickness and has flexibility.

  The first fixed substrate is separated after the necessary elements are formed on the element forming substrate and the second fixed substrate is bonded together. As a means for this, the entire first adhesive layer is irradiated by laser light irradiation. Alternatively, a method of partially vaporizing is used. Further, instead of laser light irradiation, for example, a method of separating the first fixed substrate by etching described in JP-A-8-288522, or a fluid (a liquid to which pressure is applied) is applied to the first adhesive layer. Alternatively, a method (typically a water jet method) for separating the first fixed substrate by spraying a gas may be used, or a combination of these may be used.

As the laser light, a pulse oscillation type or continuous light emission type excimer laser, YAG laser, or YVO ₄ laser can be used. As shown in FIG. 3D, laser light is passed through the first fixed substrate from the back side, and the first adhesive layer is irradiated to vaporize only the first adhesive layer to separate or peel off the first fixed substrate. Therefore, as the first fixed substrate, a substrate through which at least the laser beam to be irradiated passes, typically a light-transmitting substrate, such as a glass substrate or a quartz substrate, is used, which is thicker than the element formation substrate. Is preferred.

In the present invention, since the laser light passes through the first fixed substrate, it is necessary to appropriately select the type of the laser light and the first fixed substrate. For example, if a quartz substrate is used as the first fixed substrate, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm)
Alternatively, an excimer laser (wavelength 308 nm) may be used to form a linear beam and pass through a quartz substrate. The excimer laser does not pass through the glass substrate. Therefore, if a glass substrate is used as the first fixed substrate, the fundamental wave, the second harmonic, or the third harmonic of the YAG laser is used, and preferably the second harmonic (wavelength 532 nm) is used to generate the linear beam. What is necessary is just to form and let a glass substrate pass.

  In addition, an organic material is used as the first adhesive layer, and preferably, the first adhesive layer is vaporized in whole or in part by the irradiated laser beam. Further, in order to efficiently absorb the laser beam only in the first adhesive layer, the first adhesive layer has a characteristic of absorbing the laser beam, for example, when using the second harmonic of the YAG laser, colored or black It is desirable to use a material (for example, a resin material containing a black colorant). However, the first adhesive layer is a layer that is not vaporized by heat treatment in the element formation step. The first adhesive layer may be a single layer or a laminated layer, and an amorphous silicon film or a DLC film may be provided between the first adhesive layer and the element formation substrate as shown in FIG. .

  With such a structure, a highly reliable liquid crystal display device can be used even when an element formation substrate is very thin, specifically, a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm. Can be obtained. In addition, it has been difficult to form elements on such a thin substrate using a known manufacturing apparatus, but the present invention performs element formation by bonding to a first fixed substrate. A manufacturing apparatus using a thick substrate can be used without modifying the apparatus. In addition, the heat resistance of the element formation substrate can be improved by placing the element formation substrate between the insulating film formed on the element formation substrate and the first fixed substrate during the element formation step. .

In the configuration of the invention disclosed in this specification, the first fixed substrate and the element formation substrate are bonded together by the first adhesive layer provided on the element formation substrate, and the insulating film is formed after the element formation substrate is bonded. Then, a TFT element and a pixel electrode are formed on the insulating film, a second adhesive substrate is bonded onto the pixel electrode with a second adhesive layer, and then the first adhesive layer is removed by laser light irradiation. Then, the method for manufacturing a semiconductor device is characterized in that the first fixed substrate is separated.

  According to another aspect of the invention, the first fixed substrate and the element forming substrate are bonded together by a first adhesive layer provided on the fixed substrate, and the insulating film is formed after the element forming substrate is bonded, A TFT element and a pixel electrode are formed on the insulating film, and a second fixing substrate is bonded to the pixel electrode with a second adhesive layer, and then the first adhesive layer is removed by laser light irradiation. A method for manufacturing a semiconductor device, wherein the first fixed substrate is separated.

  In each of the above configurations, a liquid crystal material is provided between the pixel electrode and the second fixed substrate, and the liquid crystal material is the second adhesive layer (sealing material) that bonds the element formation substrate and the second fixed substrate together. Etc.), and a method for manufacturing a semiconductor device.

  In each of the above structures, an amorphous silicon thin film may be formed between the element formation substrate and the first adhesive layer. A diamond-like carbon thin film may be formed between the element formation substrate and the first adhesive layer.

  In each of the above configurations, the first adhesive layer may be colored or black using a pigment or dye to absorb laser light.

In each of the above configurations, the element formation substrate and the second fixed substrate are organic resin supports (including flexible plastic films or plastic substrates).
It is characterized by being. The element forming substrate and the second fixed substrate are thinner than the first fixed substrate.

Further, in each of the above structures, the laser light is irradiated by forming a linear beam to be scanned, and the laser light is emitted by a pulse oscillation type or continuous light emission type excimer laser, YAG A laser or a YVO ₄ laser can be used.

  Further, in each of the above-described configurations, the first adhesive layer provided on the front surface side of the first fixed substrate through the first fixed substrate passing through the first fixed substrate from the back surface side of the first fixed substrate. It is characterized by irradiating the laser beam. Therefore, it is preferable that the first fixed substrate transmits the laser beam to be used.

  The semiconductor device described in each of the above structures is a transmissive liquid crystal display device or a reflective liquid crystal display device.

According to the present invention, a display device in which an element forming layer (including a liquid crystal material, a pixel electrode, and a TFT element) is sandwiched between an element forming substrate that is a resin substrate and a second fixed substrate that is a resin substrate is subject to some stress. It has the flexibility that does not break.

Further, a highly reliable liquid crystal display device can be obtained even when an element formation substrate is very thin, specifically, a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm.

The figure which shows a board | substrate bonding process. The figure which shows the state of the board | substrate bonded together. The figure which shows a manufacturing process. 10A and 10B illustrate a manufacturing process of a p-channel TFT. 10A and 10B illustrate a manufacturing process of an n-channel TFT. 8A and 8B illustrate a process for manufacturing a CMOS circuit. 8A and 8B illustrate a process for manufacturing a CMOS circuit. The figure which shows the structure of an NMOS circuit. FIG. 6 illustrates a structure of a shift register. FIG. 6 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a liquid crystal display device. The top view of a liquid crystal display device. FIG. 6 is a top view of a pixel of a liquid crystal display device. The circuit block diagram of a liquid crystal display device. FIG. 6 is a top view and a cross-sectional structure diagram of a pixel portion of a liquid crystal display device. FIG. 6 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a liquid crystal display device. FIG. 6 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a liquid crystal display device. The figure which shows the state which gave the curvature. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device.

  Embodiments of the present invention will be described below.

First, the first fixed substrate 101 and the element formation substrate 103 are bonded together, and there are two bonding methods as shown in FIG.

  The first method is a method of bonding the first fixed substrate 101 and the element formation substrate 103 after providing the first adhesive layer 102 on the first fixed substrate 101. (FIG. 1 (A1)) The state after bonding is shown in FIG. 1 (B1).

  The second method is a method in which after the first adhesive layer 102 is provided on the element formation substrate 103, the first fixed substrate 101 and the element formation substrate 103 are bonded together. (FIG. 1 (A2)) The state after bonding is shown in FIG. 1 (B2).

  Although not shown here, an element-forming substrate is formed by forming a first adhesive layer on a first fixed substrate and then forming an organic resin layer (polyimide layer, polyamide layer, polyimide amide layer, etc.) thereon. It may be equivalent to

  Further, as shown in FIG. 2A, an a-Si (amorphous silicon) layer 202A may be provided between the first adhesive layer 202B and the element formation substrate 203. In a later step, the first fixed substrate 201 may be peeled off by irradiating the a-Si layer with laser light. It is preferable to use an a-Si layer containing a large amount of hydrogen so that the first fixed substrate 201 can be easily separated or separated. By irradiating laser light, hydrogen contained in the a-Si layer is vaporized to separate or peel off the first fixed substrate.

  Further, as shown in FIG. 2B, a DLC film (specifically, a diamond-like carbon film) for protecting the element formation substrate 206 is provided between the first adhesive layer 205B and the element formation substrate 206. May be. The first fixed substrate 204 is the same as the first fixed substrate 101 shown in FIG.

In this case, what coated the DLC film with the film thickness of 2-50 nm as a protective film on the single side | surface or both surfaces of an element formation board | substrate may be used. Note that the DLC film may be formed by sputtering or ECR plasma CVD. The characteristics of the DLC film has a peak of asymmetric about 1550 cm ^-1, a Raman spectrum distribution with a shoulder around 1300 cm ^-1. Moreover, it has the characteristic of showing a hardness of 15 to 25 GPa when measured with a micro hardness meter. Such a carbon film has a role of preventing the entry of oxygen and water and protecting the surface of the resin substrate. In this way, it is possible to prevent the entry of substances that promote deterioration due to moisture, oxygen, and the like from the outside. Therefore, a highly reliable liquid crystal display device can be obtained.

  In addition, as shown in FIG. 2C, the first DLC film 208A for protecting the element formation substrate and the first fixed substrate 207 are separated or separated between the first adhesive layer 208C and the element formation substrate 209. A second DLC film 208B may be provided to facilitate the process. As such a first DLC film 208A, a film formed under film formation conditions not containing hydrogen may be used, and as a second DLC film 208B, a film formed under film formation conditions containing hydrogen may be used. Alternatively, the first fixed substrate 207 may be separated or separated by irradiating the second DLC film 208B with laser light to vaporize hydrogen contained in the film.

  The state after bonding obtained by the above methods is shown in FIG. Here, the same thing as FIG. 1 (B1) and FIG. 1 (B2) is illustrated. Note that the same reference numerals as those in FIGS. 1B1 and 1B2 are used.

  Next, after forming a base insulating film over the element formation substrate 103, necessary elements are formed over the base insulating film. Here, an example in which the pixel portion 105 including the driving circuit 104, the TFT element, and the pixel electrode is formed is shown. (Fig. 3 (B))

  Next, the second fixed substrate (counter substrate) 106 is bonded with the second adhesive layer (sealing material) 107. (FIG. 3C) Next, the liquid crystal material 108 is sealed and held. As the second fixed substrate 106, a resin substrate may be used, and a substrate provided with a DLC film as a protective film on one side or both sides may be used.

  Next, the first fixed substrate 101 is separated by irradiating a laser beam from the back side to vaporize all or part of the first adhesive layer 102. Accordingly, the first adhesive layer 102 is made of a substance that causes a peeling phenomenon in the layer or at the interface by the laser light. Further, a laser beam that passes through the first fixed substrate 101 and is absorbed by the first adhesive layer is appropriately selected. For example, if a quartz substrate is used as the first fixed substrate, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm) or excimer laser is used. (Wavelength 308 nm) may be used to form a linear beam and pass through a quartz substrate.Excimer laser does not pass through a glass substrate, so if a glass substrate is used as the first fixed substrate, a YAG laser is used. The fundamental wave, the second harmonic, and the third harmonic can be used. Preferably, a linear beam is formed using the second harmonic (wavelength of 532 nm) and allowed to pass through the glass substrate.

  The step of separating the first fixed substrate by laser irradiation may be performed after the second fixed substrate is bonded, or may be performed before liquid crystal injection and sealing.

  Finally, a liquid crystal display device in which a liquid crystal material is sandwiched between an element formation substrate that is a resin substrate and a second fixed substrate that is a resin substrate is completed.

  In addition, as shown in FIG. 17, liquid crystal in which an element formation layer (including a liquid crystal material, a pixel electrode, and a TFT element) is sandwiched between an element formation substrate 103 that is a resin substrate and a second fixed substrate 106 that is a resin substrate. The display device has flexibility that does not break even if some stress is generated. FIG. 17A shows a state when no curvature is given, and FIG. 17B shows a state when a curvature is given. In FIG. 17B, compressive stress acts on the element formation substrate and tensile stress acts on the second fixed substrate, but almost no stress acts on the element formation layer, and the expansion and contraction in the central portion is ± 1 μm or less. It can be. It should be noted that there is no problem even if a curvature with a radius of curvature of up to 10 cm is given.

  The present invention having the above-described configuration will be described in more detail with the following examples.

  In this embodiment, an example of a method for manufacturing a liquid crystal display device in which a liquid crystal material is sandwiched between an element formation substrate which is a resin substrate and a second fixed substrate which is a resin substrate will be described with reference to FIGS. Here, all the steps are performed at 350 ° C. or lower, preferably 200 ° C. or lower. However, it goes without saying that the present invention is not limited to this embodiment.

  First, a glass substrate is used as the first fixed substrate 101. Then, the first fixed substrate 101 and the element formation substrate 103 which is a resin substrate were bonded to each other with the first adhesive layer 102 using any of the methods described in the embodiment. (Fig. 3 (A))

  Next, after forming a base insulating film over the element formation substrate 103, necessary elements are formed over the base insulating film. Here, an example in which the pixel portion 105 including the driving circuit 104, the TFT element, and the pixel electrode is formed is shown. (Fig. 3 (B))

  As the base insulating film, a silicon oxynitride film containing more nitrogen elements than oxygen elements in the film composition and silicon oxynitride containing oxygen elements more than nitrogen elements in the film composition by using a sputtering method that can be formed at a low temperature A film was laminated.

Next, a semiconductor layer is formed over the base insulating film. The material of the semiconductor layer is not limited, but it is preferably formed of silicon or silicon germanium (Si _x Ge _1-x (0 <X <1)) alloy. In this embodiment, an amorphous silicon film is formed by a sputtering method that can be formed at a low temperature, and a crystalline silicon film is formed by a laser crystallization method. When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, YAG laser, or YVO ₄ laser can be used.

  Next, a gate insulating film covering the semiconductor layer is formed. In this embodiment, the silicon oxide film is formed by a sputtering method that can be formed at a low temperature.

Next, a conductive layer is formed over the gate insulating film. The conductive layer is formed by forming a conductive film by a known means (thermal CVD method, plasma CVD method, reduced pressure thermal CVD method, vapor deposition method, sputtering method, etc.) and then patterning it into a desired shape using a mask. To do.

  Next, an impurity region for forming an LDD region, a source region, or a drain region is formed by appropriately adding an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity to the semiconductor layer by an ion implantation method or an ion doping method. Form.

  After that, an interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by a sputtering method. The added impurity element is activated. Here, laser light irradiation was performed. Instead of laser light irradiation, activation may be performed by heat treatment at 350 ° C. or lower.

  Next, a contact hole reaching the source region or the drain region is formed using a known technique, and then a source electrode or a drain electrode is formed to obtain a TFT.

  Next, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete an n-channel TFT or a p-channel TFT. In this embodiment, the hydrogenation treatment was performed using hydrogen plasma that can be performed at a relatively low temperature.

Next, an interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by a sputtering method. Next, after forming a contact hole reaching the drain electrode of the pixel portion using a known technique, a pixel electrode made of a transparent conductive film such as ITO or SnO ₂ is formed. In this embodiment, an example of a transmissive liquid crystal display device is shown as an example, but the embodiment is not particularly limited. For example, it is possible to manufacture a reflective liquid crystal display device by using a reflective metal material as the pixel electrode material and appropriately changing the patterning of the pixel electrode or adding / deleting some processes as appropriate. .

  Next, all elements included in the pixel portion and the driver circuit are covered with an insulating film (alignment film or the like).

  Next, the insulating film that covers all the elements formed on the element formation substrate and the second fixed substrate 106 are bonded together by the second adhesive layer (sealing material) 107. Thereafter, a liquid crystal material is injected and sealed. (FIG. 3C) As the second fixed substrate 106, a resin substrate may be used. A substrate provided with a DLC film as a protective film on one side or both sides is used, and a counter electrode and an alignment film for aligning liquid crystals are used. It has.

  Next, the first fixed substrate 101 is separated by irradiating a laser beam from the back side to vaporize all or part of the first adhesive layer 102. (FIG. 3D) In this embodiment, since a glass substrate is used as the first fixed substrate, the fundamental wave, the second harmonic wave, and the third harmonic wave of the YAG laser are used. Here, a linear beam was formed using the second harmonic (wavelength 532 nm), and the first adhesive layer was irradiated through the glass substrate which is the first fixed substrate 101.

  Finally, a liquid crystal display device in which a liquid crystal material is held by an element formation substrate that is a resin substrate and a second fixed substrate that is a resin substrate is completed. Each film (insulating film, semiconductor film, conductive film, etc.) is formed by sputtering, and all processes can be performed at 350 ° C. or lower, preferably 200 ° C. or lower.

  This embodiment is an example of manufacturing a p-channel TFT and will be described with reference to FIGS.

  First, the base insulating film 404 is formed over the element formation substrate 403 bonded with the first fixed substrate 401 and the first adhesive layer 402 (separation layer). As the base insulating film 404, a silicon oxide film, a silicon nitride film, a silicon nitride oxide film (SiOx Ny), or a laminated film of these can be used in a film thickness range of 100 to 500 nm. A forming method such as a plasma CVD method, a vapor deposition method, a sputtering method, or a low pressure thermal CVD method can be used.

  In this embodiment, a silicon oxynitride film containing a nitrogen element more than an oxygen element in a film composition and a silicon oxynitride film containing an oxygen element more than a nitrogen element in a film composition by using a sputtering method capable of film formation at a low temperature Were laminated.

  Note that any of the element formation substrates 403 attached by the first fixed substrate 401 and the first adhesive layer 402 (separation layer) manufactured by the method described in the above embodiment can be applied.

Next, a semiconductor layer 405 is formed over the base insulating film. The semiconductor layer 405 is formed by forming a semiconductor film having an amorphous structure by a known means (thermal CVD method, plasma CVD method, reduced pressure thermal CVD method, vapor deposition method, sputtering method, or the like), and then known crystallization treatment. A crystalline semiconductor film obtained by performing (a laser crystallization method, a thermal crystallization method, or a thermal crystallization method using a catalyst such as nickel) is formed by patterning into a desired shape. The thickness of the semiconductor layer 405 is 20 to 100 nm (preferably 30 to 60 nm). There is no limitation on the material of the crystalline semiconductor film, but it is preferably formed of silicon or a silicon germanium (Si _X Ge _1-X (0 <X <1)) alloy. In this embodiment, an amorphous silicon film is formed by a sputtering method that can be formed at a low temperature, and a crystalline silicon film is formed by a laser crystallization method. When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, YAG laser, or YVO ₄ laser can be used.

  Further, after the semiconductor layer 405 is formed, a small amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.

  Next, a gate insulating film 406 that covers the semiconductor layer 405 is formed. The gate insulating film 406 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by a plasma CVD method or a sputtering method. In this embodiment, the silicon oxide film is formed by a sputtering method that can be formed at a low temperature. (Fig. 4 (A))

Next, a conductive layer 408 is formed over the gate insulating film 406. The conductive layer 408 is formed by forming a conductive film by a known means (thermal CVD method, plasma CVD method, reduced pressure thermal CVD method, vapor deposition method, sputtering method, or the like), and then patterning the conductive film into a desired shape using a mask 407. Form. As a material of the conductive layer 408, an element selected from Ta, W, Ti, Mo, Al, Cu, Cr, and Nd, or an alloy material or a compound material containing the element as a main component may be used. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used. In this embodiment, a W film is formed by patterning using a sputtering method that can be formed at a low temperature and patterned. The end portion of the conductive layer 408 is formed in a tapered shape. For example, in the case of W, a mixed gas of CF ₄ and Cl ₂ is used, and the substrate can be etched favorably by negatively biasing the substrate.

Next, as shown in FIG. 4B, impurity regions (p + regions) 409 that form source and drain regions in a self-aligning manner are formed. This impurity region (p + region)
409 is formed by ion doping and is doped with an element belonging to Group 13 of the periodic table represented by boron. The impurity concentration of the impurity region (p + region) 409 is set to be in the range of 1 × 10 ²⁰ to 2 × 10 ²¹ / cm ³ .

Next, as illustrated in FIG. 4C, the conductive layer 410 is formed by etching so that the end portion of the conductive layer 408 recedes. In the structure of this embodiment, this is used as a gate electrode.
The formation of the gate electrode uses two etching steps, and the etching conditions are appropriately determined. For example, in the case of W, a mixed gas of CF ₄ and Cl ₂ is used, and the end can be satisfactorily processed into a tapered shape by negatively biasing the substrate. Further, by mixing oxygen with CF ₄ and Cl ₂ , anisotropic etching of W can be performed with good selectivity from the base.

Thereafter, as shown in FIG. 4D, a p-type impurity (acceptor) is doped using the conductive layer 410 as a mask to form an impurity region (p− region) 411 in a self-aligning manner. The impurity concentration of the impurity region (p− region) 411 is set to be in the range of 1 × 10 ¹⁷ to 2 × 10 ¹⁹ / cm ³ .

  After that, an interlayer insulating film 413 is formed using a silicon nitride film or a silicon nitride oxide film manufactured by a sputtering method or a plasma CVD method. The added impurity element is subjected to heat treatment at 350 to 500 ° C. or laser light irradiation for activation. Further, after forming a contact hole reaching the impurity region (p + region) using a known technique, a source electrode or a drain electrode 414 is formed to obtain a TFT.

  Finally, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete a p-channel TFT. (FIG. 4E) In this example, hydrogenation treatment was performed using hydrogen plasma that can be performed at a relatively low temperature.

  In the semiconductor layer, a channel formation region 412, an LDD (Lightly Doped Drain) region 411 formed by an impurity region (p− region), and a source or drain region 409 formed by an impurity region (p + region) are formed. Here, the p-channel TFT is shown with the LDD structure, but it is of course possible to manufacture it with a single drain or a structure in which the LDD overlaps with the gate electrode. A basic logic circuit can be configured by using the p-channel TFT shown in this embodiment, and more complicated logic circuits (signal division circuit, D / A converter, operational amplifier, γ correction circuit, etc.) can be configured. Furthermore, a memory or a microprocessor can be formed. For example, the drive circuit of the liquid crystal display device can be entirely composed of p-channel TFTs.

  This embodiment can be combined with the first embodiment.

  This embodiment is an example of manufacturing an n-channel TFT and will be described with reference to FIGS. 4A and 5A are the same, the same reference numerals are used, and description of manufacturing steps is omitted here.

After obtaining the state of FIG. 5A according to Embodiment 2, a resist mask 415 is formed by a light exposure process, and the semiconductor film 405 is doped with an n-type impurity (donor) by ion implantation or ion doping. (FIG. 5 (B)) In the impurity region (n−region) 416 to be manufactured, the doping concentration is in the range of 1 × 10 ¹⁷ to 2 × 10 ¹⁹ / cm ³ .

  Next, a gate electrode 417 is formed over the insulating film 406 using a conductive material containing one or more elements selected from tantalum, tungsten, titanium, aluminum, and molybdenum as components. (FIG. 5C) A part of the gate electrode 417 is formed so as to partially overlap with the impurity region (n− region) 416 with the gate insulating film interposed therebetween.

After that, as shown in FIG. 5D, an n-type impurity (donor) is doped using the gate electrode 417 as a mask to form an impurity region (n + region) 418 in a self-aligning manner. The impurity concentration of the impurity region (n + region) 418 is set to be in the range of 1 × 10 ¹⁷ to 2 × 10 ¹⁹ / cm ³ .

  After that, an interlayer insulating film 419 is formed using a silicon nitride film or a silicon nitride oxide film manufactured by a plasma CVD method. The added impurity element is subjected to heat treatment at 350 to 500 ° C. or laser light irradiation for activation. Further, a contact hole reaching the impurity region (n + region) is formed using a known technique, and then a source or drain electrode 420 is formed to obtain a TFT.

  Finally, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete an n-channel TFT. (FIG. 5E) In this example, hydrogenation treatment was performed using hydrogen plasma that can be performed at a relatively low temperature.

In the semiconductor layer, a channel formation region 419, an LDD (Lightly Doped Drain) region 416 formed by an impurity region (n− region), and a source or drain region 418 formed by an impurity region (n + region) are formed. Further, the LDD region 416 is formed so as to overlap with the gate electrode 417, and the concentration of the electric field at the drain end is relaxed to prevent deterioration due to hot carriers. Of course, an n-channel TFT with a single drain or LDD structure can also be manufactured. A basic logic circuit can be configured using the n-channel TFT shown in this embodiment, and more complicated logic circuits (signal division circuit, D / A converter, operational amplifier, γ correction circuit, etc.) can be configured. Furthermore, a memory or a microprocessor can be formed.
For example, the driving circuit of the liquid crystal display device can be entirely composed of n-channel TFTs.

  This embodiment can be combined with the first embodiment.

  This embodiment is an example of manufacturing a CMOS circuit in which an n-channel TFT and a p-channel TFT are complementarily combined, and will be described with reference to FIGS.

  In accordance with the second embodiment, a base insulating film is formed on the element formation substrate bonded with the first fixed substrate and the first adhesive layer (separation layer), and then the semiconductor layers 501 and 502 are formed. (Fig. 6 (A))

  Next, a gate insulating film 503, a first conductive film 504, and a second conductive film 505 are formed by sputtering. (FIG. 6B) In this embodiment, the first conductive film 504 is formed of tantalum nitride or titanium to a thickness of 50 to 100 nm, and the second conductive film 505 is formed of tungsten to a thickness of 100 to 300 nm. .

Next, as shown in FIG. 6C, a resist mask 506 is formed, and a first etching process for forming a gate electrode is performed. Although there is no limitation on the etching method, an ICP (Inductively Coupled Plasma) etching method is preferably used. CF ₄ and Cl ₂ are mixed in an etching gas, and 500 W of RF (13.56 MHz) power is applied to a coil-type electrode at a pressure of 0.5 to ₂ Pa, preferably 1 Pa, to generate plasma. 100 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. When CF ₄ and Cl ₂ are mixed, etching can be performed at a similar rate even in the case of a tungsten film, a tantalum nitride film, and a titanium film.

Under the above etching conditions, the end portion can be tapered by the shape of the resist mask and the effect of the bias voltage applied to the substrate side. The angle of the tapered portion is set to 15 to 45 °. In order to etch without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%. Since the selection ratio of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the surface where the silicon oxynitride film is exposed is etched by about 20 to 50 nm by the over-etching process. Thus, first-shaped conductive layers 507 and 508 (first conductive layers 507a and 508a and second conductive layers 507b and 508b) made of the first conductive film and the second conductive film are formed by the first etching process. Reference numeral 509 denotes a gate insulating film, and a region not covered with the first shape conductive layer is etched and thinned by about 20 to 50 nm.

Next, a second etching process is performed as shown in FIG. 6D while the resist mask is left as it is. The etching uses an ICP etching method, and CF ₄ , Cl _2, and O ₂ are mixed in an etching gas, and plasma is generated by supplying 500 W of RF power (13.56 MHz) to a coil-type electrode at a pressure of 1 Pa. . 50 W RF (13.56 MHz) power is applied to the substrate side (sample stage), and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched to leave the tantalum nitride film or titanium film as the first conductive layer. Thus, second shape conductive layers 509 and 510 (first conductive films 509a and 510a and second conductive films 509b and 510b) are formed. Reference numeral 511 denotes a gate insulating film, and regions not covered with the second shape conductive layers 509 and 510 are removed. Although the removed example is shown here, the insulating film may be left thin.

Then, a first doping process is performed to dope n-type impurities (donors). (FIG. 7A) The method is performed by ion doping or ion implantation. As the impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As) is used. In this case, the second shape conductive layers 509b and 510b serve as a mask with respect to an element to be doped, and an acceleration voltage is appropriately adjusted (for example, 70 to 120 keV), so that the gate insulating film 511 and the second conductive film 509a, An impurity region (n− region) 512 is formed by the impurity element that has passed through the taper portion 510a. For example, the phosphorus (P) concentration in the impurity region (n− region) is set in the range of 1 × 10 ¹⁷ to 1 × 10 ¹⁹ / cm ³ .

Next, after removing the mask, a mask 513 is formed, and a second doping process is performed as shown in FIG. The n-type impurity (donor) is doped under the condition of a higher acceleration voltage and lower acceleration voltage than in the first doping process. For example, the acceleration voltage is set to 20 to 60 keV, and the impurity region (n + region) 514 is formed by performing a dose of 1 × 10 ^{13 to} 5 × 10 ¹⁴ / cm ² . For example, the phosphorus (P) concentration in the impurity region (n + region) is set in the range of 1 × 10 ²⁰ to 1 × 10 ²¹ / cm ³ .

Then, after removing the resist, as shown in FIG. 7C, a resist mask 515 is formed, and a p-type impurity (acceptor) is doped into the island-shaped semiconductor layer 501 forming the p-channel TFT. Typically, boron (B) is used.
Impurity regions (p + regions) 516 and 517 have an impurity concentration of 2 × 10 ²⁰ to 2 × 10 ²¹ / cm ^3, and boron is added in an amount of 1.5 to 3 times the concentration of phosphorus contained to increase the conductivity type. Invert.

Through the above steps, impurity regions are formed in each island-like semiconductor layer. The second shape conductive layers 509 and 510 serve as gate electrodes. After that, as shown in FIG. 7D, a protective insulating film 518 made of a silicon nitride film or a silicon oxynitride film is formed by a plasma CVD method. Then, a process of activating the impurity element added to each island-like semiconductor layer is performed for the purpose of controlling the conductivity type.

Further, a silicon nitride film 519 is formed and hydrogenation is performed. In this embodiment, the hydrogenation treatment was performed using hydrogen plasma that can be performed at a relatively low temperature.

  The interlayer insulating film 520 is formed of an organic insulating material such as polyimide or acrylic. Of course, a silicon oxide film formed using TEOS (Tetraethyl Ortho silicate) by a plasma CVD method may be applied, but from the viewpoint of improving flatness, it is desirable to use the organic material.

Next, contact holes are formed, aluminum (Al), titanium (Ti)
Source wirings or drain wirings 521 to 523 are formed using tantalum (Ta) or the like.

  Through the above steps, a CMOS circuit in which an n-channel TFT and a p-channel TFT are combined in a complementary manner can be obtained.

  The p-channel TFT has a channel formation region 524 and impurity regions 516 and 517 functioning as a source region or a drain region.

  The n-channel TFT includes a channel formation region 525, an impurity region 512a (Gate Overlapped Drain) that overlaps with the gate electrode 510, an impurity region 512b (LDD region) formed outside the gate electrode, and a source region or a drain region. A functioning impurity region 514 is provided.

  Such a CMOS circuit makes it possible to form a drive circuit for an active matrix liquid crystal display device. In addition, such an n-channel TFT or a p-channel TFT can be applied to a transistor forming the pixel portion.

  By combining such CMOS circuits, basic logic circuits can be configured, and more complex logic circuits (signal division circuits, D / A converters, operational amplifiers, γ correction circuits, etc.) can be configured, and memory It is also possible to form a microprocessor.

  This embodiment can be combined with the first embodiment.

  The n-channel TFT shown in Example 3 is obtained by adding an element belonging to Group 15 of the periodic table (preferably phosphorus) or an element belonging to Group 13 of the periodic table (preferably boron) to a semiconductor serving as a channel formation region. The enhancement type and the depression type can be created separately.

  When an NMOS circuit is formed by combining n-channel TFTs, an enhancement type TFT is formed (hereinafter referred to as an EEMOS circuit), or an enhancement type and a depression type are combined (hereinafter referred to as an EDMOS circuit). Called).

Here, FIG. 8A shows an example of an EEMOS circuit, and FIG. 8B shows an example of an EDMOS circuit. In FIG. 8A, reference numerals 31 and 32 denote enhancement-type n-channel TFTs (hereinafter referred to as E-type NTFTs). 8B, 33 is an E-type NTFT, and 34 is a depletion-type n-channel TFT (hereinafter referred to as a D-type NTFT).

  8A and 8B, VDH is a power supply line (positive power supply line) to which a positive voltage is applied, and VDL is a power supply line (negative power supply line) to which a negative voltage is applied. . The negative power source line may be a ground potential power source line (ground power source line).

  Further, FIG. 9 shows an example in which a shift register is manufactured using the EEMOS circuit shown in FIG. 8A or the EDMOS circuit shown in FIG. In FIG. 9, reference numerals 40 and 41 denote flip-flop circuits. Reference numerals 42 and 43 denote E-type NTFTs. A clock signal (CL) is input to the gate of the E-type NTFT 42, and a clock signal (CL bar) having an inverted polarity is input to the gate of the E-type NTFT 43. Reference numeral 44 denotes an inverter circuit. As shown in FIG. 9B, the EEMOS circuit shown in FIG. 8A or the EDMOS circuit shown in FIG. 8B is used. Therefore, it is possible to configure all the drive circuits of the liquid crystal display device with n-channel TFTs.

  In addition, this embodiment can be combined with Embodiment 1 or Embodiment 3.

  Here, an example in which a liquid crystal display device is manufactured using the TFTs obtained in Examples 2 to 5 will be described below with reference to FIGS.

  FIG. 10 shows an example of a liquid crystal display device having a pixel portion and a driving circuit for driving the pixel portion on the same insulator (but before the liquid crystal material is sealed). Note that a CMOS circuit serving as a basic unit is shown in the driver circuit, and one pixel is shown in the pixel portion. The TFT of the CMOS circuit and the pixel portion can be obtained according to the fourth embodiment.

  In FIG. 10, reference numeral 601 denotes a first fixed substrate, 602 denotes a first adhesive layer, 603 denotes an element formation substrate, on which a driving circuit 608 including an n-channel TFT 605 and a p-channel TFT 604, and an n-channel TFT. A pixel TFT 606 and a storage capacitor 607 are formed. In this embodiment, all TFTs are formed by top gate type TFTs.

  The description of the p-channel TFT 604 and the n-channel TFT 605 is omitted because it is only necessary to refer to the fourth embodiment. The description of the pixel TFT 606 formed of an n-channel TFT is omitted here because the first or third embodiment may be referred to. The pixel TFT 606 has a structure (double gate structure) having two channel formation regions between the source region and the drain region. Refer to the description of the structure of the n-channel TFT in Example 3. Since it can be easily understood, the description is omitted. Note that this embodiment is not limited to the double gate structure, and may be a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed.

  In this embodiment, the pixel electrode 610 connected to the drain region of the pixel TFT is a reflective electrode. As a material of the pixel electrode 610, it is desirable to use a material having excellent reflectivity such as a film containing Al or Ag as a main component or a laminated film thereof. In addition, after the pixel electrode 610 is formed, a process such as a known sandblasting method or an etching method is added to make the surface uneven, thereby preventing specular reflection and scattering the reflected light, thereby increasing whiteness. preferable.

Further, FIG. 10 is a sectional view taken along a dotted line A-A 'in FIG 12. The conductive layer 712 functioning as a gate electrode also serves as one electrode of a storage capacitor of an adjacent pixel, and forms a capacitor in a portion overlapping with the semiconductor layer 753 connected to the pixel electrode 752. In addition, the arrangement relationship between the source wiring 707, the pixel electrode 724, and the adjacent pixel electrode 751 is such that end portions of the pixel electrodes 724 and 751 are provided on the source wiring 707 and an overlapping portion is formed, thereby blocking stray light and blocking light. Is increasing.

  After obtaining the state of FIG. 10, an alignment film is formed on the pixel electrode 610 and a rubbing process is performed. In this embodiment, before forming the alignment film, a columnar spacer (not shown) for holding the substrate interval is formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, instead of the columnar spacers, spherical spacers may be scattered over the entire surface of the substrate.

  Next, a second fixed substrate (counter substrate) is prepared. Next, after forming a colored layer and a light-shielding layer on the counter substrate second fixed substrate, a planarizing film is formed. Next, a counter electrode made of a transparent conductive film was formed on the planarization film at least in the pixel portion, an alignment film was formed on the entire surface of the counter substrate, and a rubbing process was performed.

  Then, the element formation substrate on which the pixel portion and the drive circuit are formed and the second fixed substrate are bonded together with a second adhesive layer (a sealing material in this embodiment). A filler is mixed in the second adhesive layer, and two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer. Thereafter, a liquid crystal material is injected between both substrates and completely sealed with a sealant (not shown). A known liquid crystal material may be used as the liquid crystal material.

  Next, after the liquid crystal sealing (or sealing) step was performed, the first fixed substrate was separated by laser irradiation as described in the embodiment and Example 1. The state of the liquid crystal display device thereafter will be described with reference to FIG.

  The top view shown in FIG. 11 includes a pixel portion, a drive circuit, an external input terminal to which an FPC (Flexible Printed Circuit Board: Flexible Printed Circuit) is pasted, wiring 81 for connecting the external input terminal to the input portion of each circuit, and the like. The formed element formation substrate and the counter substrate 82 provided with a color filter or the like are bonded to each other with a sealant 83 interposed therebetween.

  A light shielding layer 86 a is provided on the second fixed substrate side so as to overlap with the gate side driving circuit 84, and a light shielding layer 86 b is formed on the second fixed substrate side so as to overlap with the source side driving circuit 85. The color filter 88 provided on the second fixed substrate side on the pixel portion 87 has a light shielding layer and colored layers of red (R), green (G), and blue (B) corresponding to each pixel. Is provided. When actually displaying, a color display is formed with three colors of a red (R) colored layer, a green (G) colored layer, and a blue (B) colored layer. It shall be arbitrary.

  Here, the color filter 88 is provided on the second fixed substrate for the purpose of colorization, but there is no particular limitation. When an element is formed on the element formation substrate, the color filter may be formed on the element formation substrate. Good.

  In addition, a light-shielding layer is provided between adjacent pixels in the color filter to shield light other than the display area. Here, the light shielding layers 86a and 86b are also provided in the region covering the drive circuit. However, the region covering the drive circuit is covered with a cover when the liquid crystal display device is incorporated later as a display portion of an electronic device. It is good also as a structure which does not provide a light shielding layer. Further, when a necessary element is manufactured on the element formation substrate, a light shielding layer may be formed on the element formation substrate.

  Further, without providing the light-shielding layer, between the second fixed substrate and the counter electrode, the colored layers constituting the color filter are appropriately disposed so as to be shielded from light by laminating a plurality of layers. The gap between the pixel electrodes) and the drive circuit may be shielded from light.

  An FPC 89 made of a base film and wiring is bonded to the external input terminal with an anisotropic conductive resin. Furthermore, the mechanical strength is increased by the reinforcing plate.

  A polarizing plate (not shown) is attached only to the second fixed substrate.

  The liquid crystal display device manufactured as described above can be used as a display portion of various electronic devices.

  This embodiment can be combined with the first embodiment.

  In this embodiment, a circuit configuration example of the liquid crystal display device shown in Embodiment 6 is shown in FIG.

Note that FIG. 13A illustrates a circuit configuration for performing analog driving. In this embodiment, a source side driver circuit 90, a pixel portion 91, and a gate side driver circuit 92 are provided.
Note that in this specification, the drive circuit is a generic name including a source side processing circuit and a gate side drive circuit.

  The source side driver circuit 90 includes a shift register 90a, a buffer 90b, and a sampling circuit (transfer gate) 90c. The gate side driving circuit 92 includes a shift register 92a, a level shifter 92b, and a buffer 92c. Note that the shift registers shown in FIG. 16 may be used as the shift registers 90a and 92a. Further, if necessary, a level shifter circuit may be provided between the sampling circuit and the shift register.

In this embodiment, the pixel portion 91 includes a plurality of pixels, and each of the plurality of pixels is provided with a TFT element.

  These source side driver circuit 90 and gate side driver circuit 92 can all be formed of N-channel TFTs. In this case, all the circuits are formed with the EEMOS circuit shown in FIG. 8A as a basic unit. However, the power consumption is slightly increased as compared with the conventional CMOS circuit.

  Further, the source side driver circuit 90 and the gate side driver circuit 92 can all be formed of p-channel TFTs.

  Although not shown, a gate side drive circuit may be further provided on the opposite side of the gate side drive circuit 92 with the pixel portion 91 interposed therebetween.

Also, the case of digital driving, as shown in FIG. 13 (B), instead of the latch (A) 93 b of the sampling circuit may be provided a latch (B) 93c. The source side driving circuit 93 includes a shift register 93a, a latch (A) 93b, a latch (B) 93c, a D / A converter 93d, and a buffer 93e. The gate side driving circuit 95 includes a shift register 95a, a level shifter 95b, and a buffer 95c. Note that the shift registers shown in FIG. 9 may be used as the shift registers 93a and 95a. If necessary, a level shifter circuit may be provided between the latch (B) 93c and the D / A converter 93d.

  Further, the source side driver circuit 93 and the gate side driver circuit 95 can all be formed of N-channel TFTs.

  Further, the source side driver circuit 93 and the gate side driver circuit 95 can all be formed of p-channel TFTs.

  In addition, the said structure can be implement | achieved according to the manufacturing process shown in the said Example 2, 3, or 4. Further, although only the configuration of the pixel portion and the drive circuit is shown in this embodiment, a memory or a microprocessor can be formed according to the manufacturing process of this embodiment.

  In this embodiment, an example of a liquid crystal display device in which TFTs used for a pixel portion and a driver circuit are formed of inverted staggered TFTs is shown in FIG. 14A is an enlarged top view of one of the pixels in the pixel portion. In FIG. 14A, a portion cut along a dotted line AA ′ is a cross section of the pixel portion in FIG. Corresponds to the structure.

  In FIG. 14B, reference numeral 50a denotes a first fixed substrate, 51 denotes a first adhesive layer, and 50b denotes an element formation substrate. First, according to the embodiment, the first fixed substrate 50a and the first adhesive layer 51 (separation layer) The element formation substrate 50b pasted in step 1) is prepared. Note that a base insulating film may be formed over the element formation substrate if necessary.

In the pixel portion, the pixel TFT portion is formed of an N-channel TFT. A gate electrode 52 is formed on a substrate 51, and a first insulating film 53a made of silicon nitride and a second insulating film 53b made of silicon oxide are provided thereon. On the second insulating film, n @ + regions 54 to 56, channel forming regions 57 and 58 as active layers, and n @-type regions 59 and 60 are formed between the n @ + type region and the channel forming region. Is done. The channel formation regions 57 and 58 are protected by insulating layers 61 and 62. After a contact hole is formed in the first interlayer insulating film 63 covering the insulating layers 61 and 62 and the active layer, a wiring 64 connected to the n + region 54 is formed, a wiring 65 is connected to the n + region 56, and A passivation film 66 is formed thereon. Then, a second interlayer insulating film 67 is formed thereon. Further, a third interlayer insulating film 68 is formed thereon, and a pixel electrode 69 made of a transparent conductive film such as ITO or SnO ₂ is connected to the wiring 65. Reference numeral 70 denotes a pixel electrode adjacent to the pixel electrode 69.

  In this embodiment, an example of a transmissive liquid crystal display device is shown as an example, but the embodiment is not particularly limited. For example, it is possible to manufacture a reflective liquid crystal display device by using a reflective metal material as the pixel electrode material and appropriately changing the patterning of the pixel electrode or adding / deleting some processes as appropriate. .

  In this embodiment, the gate wiring of the pixel TFT in the pixel portion has a double gate structure. However, a multi-gate structure such as a triple gate structure may be used in order to reduce variation in off current. Further, a single gate structure may be used in order to improve the aperture ratio.

  The capacitor portion of the pixel portion is formed by the capacitor wiring 71 and the n + region 56 using the first insulating film and the second insulating film as dielectrics.

  Note that the pixel portion illustrated in FIG. 14 is merely an example, and it is needless to say that the pixel portion is not particularly limited to the above configuration.

  Further, all TFTs on the element formation substrate can be N-channel TFTs. If all TFTs on the element formation substrate are N-channel TFTs, the process of forming P-channel TFTs can be omitted, and the manufacturing process of the liquid crystal display device can be simplified. As a result, the yield of the manufacturing process is improved, and the manufacturing cost of the liquid crystal display device can be reduced.

  In this embodiment, FIG. 15 shows an example of a liquid crystal display device in which all TFTs used in the pixel portion and the driving circuit are N-channel TFTs. In addition, the same code | symbol was used for the part corresponded to the location same as FIG. 10 of Example 6. FIG.

  In FIG. 15, reference numeral 601 denotes a first fixed substrate, 602 denotes a first adhesive layer, and 603 denotes an element formation substrate. First, the first fixed substrate 601 and the first adhesive layer 602 (separation layer) are attached according to the embodiment. A base insulating film is formed over the attached element formation substrate 603.

  On the base insulating film, a driver circuit including an N-channel TFT 1101 and an N-channel TFT 1102, a pixel TFT 1103 including an N-channel TFT, and a storage capacitor 1104 are formed. Note that description of the N-channel TFT is omitted because it is sufficient to refer to the third embodiment.

  Here, unlike the sixth embodiment, it is an example of a transmissive liquid crystal display device. After forming the interlayer insulating film, a pixel electrode 1107 made of a transparent conductive film was formed by patterning, and then a contact hole was formed to form a connection electrode 1108 that connects the pixel electrode 1107 and the drain region of the pixel TFT 1103. Similarly, a connection electrode 1109 for connecting the pixel electrode 1107 and the semiconductor region in the storage capacitor 1104 was formed.

  In addition, after obtaining the state of FIG. 15, the second fixed substrate is bonded with the second adhesive layer according to the process of Example 6, and then the first fixed substrate 601 is attached by irradiating the first adhesive layer 602 with a laser. The liquid crystal display device may be completed by separation.

  By forming the gate side driver circuit and the source side driver circuit with only the N-channel TFT, the pixel portion and the driver circuit can all be formed with the N-channel TFT. Accordingly, the yield and throughput of the TFT process can be significantly improved in manufacturing an active matrix electro-optical device, and the manufacturing cost can be reduced.

  Note that this embodiment can also be implemented when one of the source side driver circuit and the gate side driver circuit is an external IC chip.

  In this embodiment, the drive circuit is configured using only the E-type NTFT, but it may be formed by combining the E-type NTFT and the D-type NTFT.

  In this embodiment, FIG. 16 shows an example of a liquid crystal display device in which all TFTs used for the pixel portion and the driver circuit are P-channel TFTs. In addition, the same code | symbol was used for the part corresponded to the location same as FIG. 10 of Example 6. FIG.

  In FIG. 16, reference numeral 601 denotes a first fixed substrate, 602 denotes a first adhesive layer, and 603 denotes an element formation substrate. First, the first fixed substrate 601 and the first adhesive layer 602 (separation layer) are attached according to the embodiment. A base insulating film is formed over the attached element formation substrate 603.

  On the base insulating film, a driver circuit including a P-channel TFT 1201 and a P-channel TFT 1202, a pixel TFT 1203 including a P-channel TFT, and a storage capacitor 1204 are formed. Note that description of the P-channel TFT is omitted because it is only necessary to refer to the second embodiment.

  Here, unlike the sixth embodiment, it is an example of a transmissive liquid crystal display device. After forming the interlayer insulating film, a pixel electrode 1207 made of a transparent conductive film was formed by patterning, and then a contact hole was formed to form a connection electrode 1208 that connects the pixel electrode 1207 and the drain region of the pixel TFT 1203. Similarly, a connection electrode 1209 that connects the pixel electrode 1207 and the semiconductor region in the storage capacitor 1204 was formed.

  In addition, after obtaining the state of FIG. 16, the second fixed substrate is bonded to the second adhesive layer in accordance with the process of Example 6, and then the first adhesive layer 602 is irradiated with a laser to attach the first fixed substrate 601. The liquid crystal display device may be completed by separation.

  By forming the gate side drive circuit and the source side drive circuit with only the P-channel TFT, the pixel portion and the drive circuit can all be formed with the P-channel TFT. Accordingly, the yield and throughput of the TFT process can be significantly improved in manufacturing an active matrix electro-optical device, and the manufacturing cost can be reduced.

  Note that this embodiment can also be implemented when one of the source side driver circuit and the gate side driver circuit is an external IC chip.

  As the element formation substrate, a metal substrate, for example, a stainless steel substrate can also be used. In this embodiment, an example in that case is shown below.

  In this example, a stainless steel substrate (thickness 10 to 200 μm) is used as the element formation substrate of Example 1. First, according to the embodiment, the first fixed substrate and the stainless steel substrate are bonded together with the first adhesive layer.

  Thereafter, according to the first embodiment, a necessary element may be formed by forming a base insulating film on an element formation substrate made of a stainless steel substrate. Note that unlike the first embodiment, a stainless steel substrate having high heat resistance is used, so that a TFT can be manufactured using a process at a higher temperature (about 500 ° C. or lower) than that of the first embodiment.

  Since the stainless steel substrate is used when separating the first fixed substrate, the first fixed substrate is separated without affecting the elements formed on the element forming substrate even if the laser beam is irradiated. Can do.

In addition, since the stainless steel substrate has light shielding properties, the display device of this embodiment is a reflective liquid crystal display device.

  By using a thin metal substrate (thickness of 10 to 200 μm), it is possible to obtain a light-emitting device that can be reduced in weight and thickness and has flexibility. Moreover, since the metal substrate is used, the heat radiation effect of the TFT element formed on the element substrate can be obtained.

  In addition, this embodiment can be freely combined with any one of Embodiments 1 to 9.

  The driving circuit and the pixel portion formed by implementing the present invention can be used in various electro-optical devices (active matrix liquid crystal display, active matrix EL display, active matrix EC display). That is, the present invention can be implemented in all electronic devices in which these electro-optical devices are incorporated in the display unit.

Such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.) and the like. . Examples of these are shown in FIGS.

FIG. 18A illustrates a personal computer, which includes a main body 2001, an image input portion 2002, a display portion 2003, a keyboard 2004, and the like. The present invention can be applied to the image input unit 2002, the display unit 2003, and other driving circuits.

FIG. 18B shows a video camera, which includes a main body 2101, a display portion 2102, an audio input portion 2103, operation switches 2104, a battery 2105, an image receiving portion 2106, and the like. The present invention can be applied to the display portion 2102 and other driver circuits.

FIG. 18C illustrates a mobile computer, which includes a main body 2201, a camera unit 2202, an image receiving unit 2203, operation switches 2204, a display unit 2205, and the like. The present invention can be applied to the display portion 2205 and other driving circuits.

FIG. 18D shows a goggle type display, which includes a main body 2301, a display portion 2302, an arm portion 2303, and the like. The present invention can be applied to the display portion 2302 and other driving circuits.

FIG. 18E shows a player using a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404, an operation switch 2405, and the like. This player uses a DVD (Digital Versatile Disc), CD, or the like as a recording medium, and can perform music appreciation, movie appreciation, games, and the Internet. The present invention can be applied to the display portion 2402 and other driving circuits.

FIG. 18F illustrates a digital camera, which includes a main body 2501, a display portion 2502, an eyepiece portion 2503, an operation switch 2504, an image receiving portion (not shown), and the like. The present invention can be applied to the display portion 2502 and other driving circuits.

  FIG. 19A shows a cellular phone, which includes a main body 2901, an audio output portion 2902, an audio input portion 2903, a display portion 2904, operation switches 2905, an antenna 2906, and the like. The present invention can be applied to the audio output unit 2902, the audio input unit 2903, the display unit 2904, and other driving circuits.

  FIG. 19B illustrates a portable book (electronic book), which includes a main body 3001, display portions 3002 and 3003, a storage medium 3004, operation switches 3005, an antenna 3006, and the like. The present invention can be applied to the display portions 3002 and 3003 and other driving circuits.

  FIG. 19C illustrates a display, which includes a main body 3101, a support base 3102, a display portion 3103, and the like. The present invention can be applied to the display portion 3103. The display of the present invention is particularly advantageous when the screen is enlarged, and is advantageous for displays having a diagonal of 10 inches or more (particularly 30 inches or more).

  As described above, the application range of the present invention is extremely wide and can be applied to electronic devices in various fields. Moreover, the electronic apparatus of a present Example is realizable even if it uses the structure which consists of what combination of Examples 1-10.

Claims (24)

Forming a resin substrate on a fixed substrate having a separation layer;
Forming at least a TFT element on the resin substrate;
By vaporizing some or all of the separation layer is irradiated with a laser beam to the separating layer, that a step of peeling away the resin substrate from the fixed substrate in a layer or in an interface of the separation layer A method for manufacturing a semiconductor device. Forming a resin substrate having a separation layer on a fixed substrate;
Forming at least a TFT element on the resin substrate;
By vaporizing some or all of the separation layer is irradiated with a laser beam to the separating layer, that a step of peeling away the resin substrate from the fixed substrate in a layer or in an interface of the separation layer A method for manufacturing a semiconductor device. Forming an organic resin layer on a fixed substrate having a separation layer;
Forming at least a TFT element on the organic resin layer;
Wherein the the separation layer is irradiated with a laser beam to vaporize part or all of the separation layer, and a step of peeling away the organic resin layer from the fixed substrate in a layer or in an interface of the separation layer A method for manufacturing a semiconductor device. Forming an organic resin layer having a separation layer on a fixed substrate;
Forming at least a TFT element on the organic resin layer;
Wherein the the separation layer is irradiated with a laser beam to vaporize part or all of the separation layer, and a step of peeling away the organic resin layer from the fixed substrate in a layer or in an interface of the separation layer A method for manufacturing a semiconductor device. Forming a resin substrate on a fixed substrate having a separation layer;
Forming at least a TFT element on the resin substrate;
The relative separation layer, by vaporizing a part or all of the separation layer is irradiated with laser light through the fixed substrate and exfoliation of the resin substrate from the fixed substrate in a layer or in an interface of the separation layer A method for manufacturing a semiconductor device. Forming a resin substrate having a separation layer on a fixed substrate;
Forming at least a TFT element on the resin substrate;
The relative separation layer, by vaporizing a part or all of the separation layer is irradiated with laser light through the fixed substrate and exfoliation of the resin substrate from the fixed substrate in a layer or in an interface of the separation layer A method for manufacturing a semiconductor device. Forming an organic resin layer on a fixed substrate having a separation layer;
Forming at least a TFT element on the organic resin layer;
The relative separation layer, by vaporizing a part or all of the separation layer is irradiated with laser light through the fixed substrate, the peeling of the organic resin layer from the fixed substrate in a layer or in the interface between the separation layer away A method for manufacturing a semiconductor device. Forming an organic resin layer having a separation layer on a fixed substrate;
Forming at least a TFT element on the organic resin layer;
The relative separation layer, by vaporizing a part or all of the separation layer is irradiated with laser light through the fixed substrate, the peeling of the organic resin layer from the fixed substrate in a layer or in the interface between the separation layer away A method for manufacturing a semiconductor device. In claim 1, claim 2, claim 5, or claim 6,
The method for manufacturing a semiconductor device, wherein the resin substrate is a polyimide layer, a polyamide layer, a polyimideamide layer, or a BCB layer. In claim 3, claim 4, claim 7, or claim 8,
The method for manufacturing a semiconductor device, wherein the organic resin layer is a polyimide layer, a polyamide layer, a polyimide amide layer, or a BCB layer. In any one of Claims 1 thru | or 10,
The method for manufacturing a semiconductor device, wherein the TFT element is an inverted staggered TFT. In any one of Claims 1 thru | or 11,
The method for manufacturing a semiconductor device, wherein the fixed substrate is a glass substrate or a quartz substrate. Forming a resin substrate on a fixed substrate having a separation layer;
Forming at least a TFT element on the resin substrate;
By vaporizing some or all of the separation layer is irradiated with a laser beam to the separating layer, that a step of peeling away the resin substrate from the fixed substrate in a layer or in an interface of the separation layer A method for manufacturing an electronic book. Forming a resin substrate having a separation layer on a fixed substrate;
Forming at least a TFT element on the resin substrate;
By vaporizing some or all of the separation layer is irradiated with a laser beam to the separating layer, that a step of peeling away the resin substrate from the fixed substrate in a layer or in an interface of the separation layer A method for manufacturing an electronic book. Forming an organic resin layer on a fixed substrate having a separation layer;
Forming at least a TFT element on the organic resin layer;
Wherein the the separation layer is irradiated with a laser beam to vaporize part or all of the separation layer, and a step of peeling away the organic resin layer from the fixed substrate in a layer or in an interface of the separation layer A manufacturing method of an electronic book characterized by the above. Forming an organic resin layer having a separation layer on a fixed substrate;
Forming at least a TFT element on the organic resin layer;
Wherein the the separation layer is irradiated with a laser beam to vaporize part or all of the separation layer, and a step of peeling away the organic resin layer from the fixed substrate in a layer or in an interface of the separation layer A manufacturing method of an electronic book characterized by the above. Forming a resin substrate on a fixed substrate having a separation layer;
Forming at least a TFT element on the resin substrate;
The relative separation layer, by vaporizing a part or all of the separation layer is irradiated with laser light through the fixed substrate and exfoliation of the resin substrate from the fixed substrate in a layer or in an interface of the separation layer And a method for manufacturing an electronic book. Forming a resin substrate having a separation layer on a fixed substrate;
Forming at least a TFT element on the resin substrate;
The relative separation layer, by vaporizing a part or all of the separation layer is irradiated with laser light through the fixed substrate and exfoliation of the resin substrate from the fixed substrate in a layer or in an interface of the separation layer And a method for manufacturing an electronic book. Forming an organic resin layer on a fixed substrate having a separation layer;
Forming at least a TFT element on the organic resin layer;
The relative separation layer, by vaporizing a part or all of the separation layer is irradiated with laser light through the fixed substrate, the peeling of the organic resin layer from the fixed substrate in a layer or in the interface between the separation layer away And a method for manufacturing an electronic book. Forming an organic resin layer having a separation layer on a fixed substrate;
Forming at least a TFT element on the organic resin layer;
The relative separation layer, by vaporizing a part or all of the separation layer is irradiated with laser light through the fixed substrate, the peeling of the organic resin layer from the fixed substrate in a layer or in the interface between the separation layer away And a method for manufacturing an electronic book. Claim 13, claim 14, claim 17, or claim 18,
The method for manufacturing an electronic book, wherein the resin substrate is a polyimide layer, a polyamide layer, a polyimideamide layer, or a BCB layer. In claim 15, claim 16, claim 19, or claim 20,
The method for manufacturing an electronic book, wherein the organic resin layer is a polyimide layer, a polyamide layer, a polyimideamide layer, or a BCB layer. In any one of Claims 13 thru | or 22,
The method for manufacturing an electronic book, wherein the TFT element is an inverted staggered TFT. In any one of claims 13乃Itaru 2 3,
The method for manufacturing an electronic book, wherein the fixed substrate is a glass substrate or a quartz substrate.

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