JP6378372B2 - Method for manufacturing semiconductor device - Google Patents

Method for manufacturing semiconductor device Download PDF

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JP6378372B2
JP6378372B2 JP2017005614A JP2017005614A JP6378372B2 JP 6378372 B2 JP6378372 B2 JP 6378372B2 JP 2017005614 A JP2017005614 A JP 2017005614A JP 2017005614 A JP2017005614 A JP 2017005614A JP 6378372 B2 JP6378372 B2 JP 6378372B2
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substrate
formed
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liquid crystal
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JP2017108147A (en
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山崎 舜平
舜平 山崎
高山 徹
徹 高山
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株式会社半導体エネルギー研究所
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The present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a method for manufacturing the semiconductor device. For example, the present invention relates to an electro-optical device typified by a liquid crystal display panel and an electronic apparatus in which such an electro-optical device is mounted as a component.

Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

Various applications using such an image display device are expected, but the use for portable devices is attracting attention. Therefore, it has been attempted to form a TFT element on a flexible plastic film.

However, since the heat resistance of the plastic film is low, the maximum temperature of the process has to be lowered, and as a result, TFTs having better electrical characteristics cannot be formed than when formed on a glass substrate. Therefore, a high-performance liquid crystal display device using a plastic film has not been realized.

Japanese Patent Application Laid-Open No. 8-288522 describes a technique in which a thin film transistor is formed on a glass substrate, a resin substrate is bonded via a sealing layer, and then the glass substrate is peeled off.
When this technology is used, the active layer of the TFT is only protected by the base insulating film.
There has been a problem that FT tends to deteriorate.

In JP-A-11-243209, a separation layer is provided, and after the separation layer is peeled off by laser light, it is bonded to the primary transfer body via the adhesive layer, and further transferred to the secondary transfer via the adhesive layer. A technique for removing the primary transfer body after joining the bodies is described. Even when this technique is used, there is a problem that the active layer of the TFT is protected only by the base insulating film during the manufacturing process, so that the TFT is easily damaged and the TFT is easily deteriorated.

It is an object of the present invention to provide a technique for manufacturing a high-performance electro-optical device using a plastic support (including a flexible plastic film or a plastic substrate).

In the present invention, after bonding an element forming substrate made of a plastic support on a first fixing substrate having heat resistance compared to plastic with a first adhesive layer, necessary elements are formed on the element forming substrate, The liquid crystal material is sealed and held after the second fixed substrate is bonded to the element with the second adhesive layer, and then the first fixed substrate is separated.

Note that the necessary elements refer to semiconductor elements (typically TFTs) or MIM elements used as pixel switching elements in the case of an active matrix type electro-optical device.

Further, the method for bonding the first fixed substrate and the element formation substrate is not particularly limited.
As shown in the above, a method of bonding the element forming substrate after forming the first adhesive layer on the first fixed substrate, or a method of bonding the first fixed substrate after forming the first adhesive layer on the element forming substrate May be used.

Further, the element forming substrate made of a plastic support and the second fixed substrate have a thickness of 10 μm.
m or more resin substrates, for example, PES (polyethylene sulfide), PC (polycarbonate), PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) can be used. In addition, after forming an adhesive layer on the first fixed substrate, an organic resin layer (polyimide layer, polyamide layer, polyimideamide layer, BCB (benzocyclobutene) layer, etc.) is formed thereon to form an element It may be called a substrate.

Further, as the element formation substrate, a metal substrate such as a stainless steel substrate can be used. In that case, a necessary element may be formed by forming a base insulating film on a metal substrate. By using a thin metal substrate (thickness of 10 to 200 μm), it is possible to obtain a reflective liquid crystal display device that can be reduced in weight and thickness and has flexibility.

The first fixed substrate is separated after the necessary elements are formed on the element forming substrate and the second fixed substrate is bonded together. As a means for this, the entire first adhesive layer is irradiated by laser light irradiation. Alternatively, a method of partially vaporizing is used. Further, instead of laser light irradiation, for example, a method of separating the first fixed substrate by etching described in JP-A-8-288522, or a fluid (a liquid to which pressure is applied) is applied to the first adhesive layer. Alternatively, a method (typically a water jet method) for separating the first fixed substrate by spraying gas) may be used.
You may use combining these.

As the laser light, a pulse oscillation type or continuous light emission type excimer laser, YAG laser, or YVO 4 laser can be used. As shown in FIG. 3D, laser light is passed through the first fixed substrate from the back side, and the first adhesive layer is irradiated to vaporize only the first adhesive layer to separate or peel off the first fixed substrate. Therefore, as the first fixed substrate, a substrate through which at least the laser beam to be irradiated passes, typically a light-transmitting substrate, such as a glass substrate or a quartz substrate, is used, which is thicker than the element formation substrate. Is preferred.

In the present invention, since the laser light passes through the first fixed substrate, it is necessary to appropriately select the type of the laser light and the first fixed substrate. For example, if a quartz substrate is used as the first fixed substrate, a YAG laser (fundamental wave (1064 nm), second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm)
Alternatively, an excimer laser (wavelength 308 nm) may be used to form a linear beam and pass through a quartz substrate. The excimer laser does not pass through the glass substrate. Therefore, if a glass substrate is used as the first fixed substrate, the fundamental wave, the second harmonic, or the third harmonic of the YAG laser is used, and preferably the second harmonic (wavelength 532 nm) is used to generate the linear beam. What is necessary is just to form and let a glass substrate pass.

In addition, an organic material is used as the first adhesive layer, and preferably, the first adhesive layer is vaporized in whole or in part by the irradiated laser beam. Further, in order to efficiently absorb the laser beam only in the first adhesive layer, the first adhesive layer has a characteristic of absorbing the laser beam, for example, when using the second harmonic of the YAG laser, colored or black (For example, a resin material containing a black colorant)
It is desirable to use those. However, the first adhesive layer is a layer that is not vaporized by heat treatment in the element formation step. The first adhesive layer may be a single layer or a laminate,
As shown in FIG. 2, an amorphous silicon film or DL is formed between the first adhesive layer and the element formation substrate.
A C film may be provided.

By adopting such a configuration, the thickness of the element formation substrate is very thin, specifically 5
Even when a substrate having a thickness of 0 μm to 300 μm, preferably 150 μm to 200 μm is used, a highly reliable liquid crystal display device can be obtained. In addition, it has been difficult to form elements on such a thin substrate using a known manufacturing apparatus, but the present invention performs element formation by bonding to a first fixed substrate. A manufacturing apparatus using a thick substrate can be used without modifying the apparatus. In addition, the heat resistance of the element formation substrate can be improved by placing the element formation substrate between the insulating film formed on the element formation substrate and the first fixed substrate during the element formation step. .

In the configuration of the invention disclosed in this specification, the first fixed substrate and the element formation substrate are bonded together by the first adhesive layer provided on the element formation substrate, and the insulating film is formed after the element formation substrate is bonded. And
A TFT element and a pixel electrode are formed on the insulating film, a second fixing substrate is bonded to the pixel electrode with a second adhesive layer, and then the first adhesive layer is removed by laser light irradiation. A method of manufacturing a semiconductor device, wherein the first fixed substrate is separated.

According to another aspect of the invention, the first fixed substrate and the element forming substrate are bonded together by a first adhesive layer provided on the fixed substrate, and the insulating film is formed after the element forming substrate is bonded, A TFT element and a pixel electrode are formed on the insulating film, and a second fixing substrate is bonded to the pixel electrode with a second adhesive layer, and then the first adhesive layer is removed by laser light irradiation. A method for manufacturing a semiconductor device, wherein the first fixed substrate is separated.

In each of the above configurations, a liquid crystal material is provided between the pixel electrode and the second fixed substrate, and the liquid crystal material is the second adhesive layer (sealing material) that bonds the element formation substrate and the second fixed substrate together. Etc.), and a method for manufacturing a semiconductor device.

In each of the above structures, an amorphous silicon thin film may be formed between the element formation substrate and the first adhesive layer. A diamond-like carbon thin film may be formed between the element formation substrate and the first adhesive layer.

In each of the above configurations, the first adhesive layer may be colored or black using a pigment or dye to absorb laser light.

In each of the above configurations, the element formation substrate and the second fixed substrate are organic resin supports (including flexible plastic films or plastic substrates).
It is characterized by being. In addition, as the element formation substrate and the second fixed substrate,
A substrate having a thickness smaller than that of the first fixed substrate is used.

Further, in each of the above structures, the laser light is irradiated by forming a linear beam to be scanned, and the laser light is emitted by a pulse oscillation type or continuous light emission type excimer laser, YAG A laser or a YVO 4 laser can be used.

Further, in each of the above-described configurations, the first adhesive layer provided on the front surface side of the first fixed substrate through the first fixed substrate passing through the first fixed substrate from the back surface side of the first fixed substrate. It is characterized by irradiating the laser beam. Therefore, it is preferable that the first fixed substrate transmits the laser beam to be used.

The semiconductor device described in each of the above structures is a transmissive liquid crystal display device or a reflective liquid crystal display device.

According to the present invention, a display device in which an element forming layer (including a liquid crystal material, a pixel electrode, and a TFT element) is sandwiched between an element forming substrate that is a resin substrate and a second fixed substrate that is a resin substrate is subject to some stress. It has the flexibility that does not break.

Further, a highly reliable liquid crystal display device can be obtained even when an element formation substrate is very thin, specifically, a substrate having a thickness of 50 μm to 300 μm, preferably 150 μm to 200 μm.

The figure which shows a board | substrate bonding process. The figure which shows the state of the board | substrate bonded together. The figure which shows a manufacturing process. 10A and 10B illustrate a manufacturing process of a p-channel TFT. 10A and 10B illustrate a manufacturing process of an n-channel TFT. 8A and 8B illustrate a process for manufacturing a CMOS circuit. 8A and 8B illustrate a process for manufacturing a CMOS circuit. The figure which shows the structure of an NMOS circuit. FIG. 6 illustrates a structure of a shift register. FIG. 6 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a liquid crystal display device. The top view of a liquid crystal display device. FIG. 6 is a top view of a pixel of a liquid crystal display device. The circuit block diagram of a liquid crystal display device. FIG. 6 is a top view and a cross-sectional structure diagram of a pixel portion of a liquid crystal display device. FIG. 6 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a liquid crystal display device. FIG. 6 is a cross-sectional structure diagram of a driver circuit and a pixel portion of a liquid crystal display device. The figure which shows the state which gave the curvature. FIG. 14 illustrates an example of an electronic device. FIG. 14 illustrates an example of an electronic device.

  Embodiments of the present invention will be described below.

First, the first fixed substrate 101 and the element formation substrate 103 are bonded together, and there are two bonding methods as shown in FIG.

The first method is a method of bonding the first fixed substrate 101 and the element formation substrate 103 after providing the first adhesive layer 102 on the first fixed substrate 101. (FIG. 1 (A1)) The state after bonding is shown in FIG. 1 (B1).

The second method is a method in which after the first adhesive layer 102 is provided on the element formation substrate 103, the first fixed substrate 101 and the element formation substrate 103 are bonded together. (Fig. 1 (A2))
The state after bonding is shown in FIG.

Although not shown here, an element-forming substrate is formed by forming a first adhesive layer on a first fixed substrate and then forming an organic resin layer (polyimide layer, polyamide layer, polyimide amide layer, etc.) thereon. It may be equivalent to

Further, as shown in FIG. 2A, a between the first adhesive layer 202B and the element formation substrate 203
A structure may be provided in which a Si (amorphous silicon) layer 202A is provided. In a later step, the first fixed substrate 201 may be peeled off by irradiating the a-Si layer with laser light. A-Si containing a large amount of hydrogen so that the first fixed substrate 201 can be easily separated or separated.
It is preferable to use a layer. By irradiating laser light, hydrogen contained in the a-Si layer is vaporized to separate or peel off the first fixed substrate.

Further, as shown in FIG. 2B, between the first adhesive layer 205B and the element formation substrate 206,
A DLC film (specifically, a diamond-like carbon film) for protecting the element formation substrate 206 may be provided. The first fixed substrate 204 is the first fixed substrate 101 shown in FIG.
Is the same.

In this case, a DLC film having a thickness of 2 to 50 n as a protective film on one or both sides of the element formation substrate
You may use what was coated with m. Note that the DLC film may be formed by sputtering or ECR plasma CVD. The characteristics of the DLC film has a peak of asymmetric about 1550 cm -1, a Raman spectrum distribution with a shoulder around 1300 cm -1. Moreover, it has the characteristic of showing a hardness of 15 to 25 GPa when measured with a micro hardness meter. Such a carbon film has a role of preventing the entry of oxygen and water and protecting the surface of the resin substrate. In this way, it is possible to prevent the entry of substances that promote deterioration due to moisture, oxygen, and the like from the outside. Therefore, a highly reliable liquid crystal display device can be obtained.

Further, as shown in FIG. 2C, between the first adhesive layer 208C and the element formation substrate 209,
A first DLC film 208A for protecting the element formation substrate and a second DLC film 208B for facilitating separation or separation of the first fixed substrate 207 may be provided. Such first
What is necessary is just to use what was formed on the film-forming conditions which do not contain hydrogen as the DLC film 208A, and what was formed on the film-forming conditions containing hydrogen as the 2nd DLC film 208B. Second DLC
The first fixed substrate 207 may be separated or peeled off by irradiating the film 208B with laser light to vaporize hydrogen contained in the film.

The state after bonding obtained by the above methods is shown in FIG. Here, the same thing as FIG. 1 (B1) and FIG. 1 (B2) is illustrated. Note that the same reference numerals as those in FIGS. 1B1 and 1B2 are used.

Next, after forming a base insulating film over the element formation substrate 103, necessary elements are formed over the base insulating film. Here, the pixel portion 1 having a driving circuit 104, a TFT element, and a pixel electrode.
An example of forming 05 is shown. (Fig. 3 (B))

Next, the second fixed substrate (counter substrate) 106 is bonded with the second adhesive layer (sealing material) 107. (FIG. 3C) Next, the liquid crystal material 108 is sealed and held. As the second fixed substrate 106, a resin substrate may be used, and a substrate provided with a DLC film as a protective film on one side or both sides may be used.

Next, the first fixed substrate 101 is separated by irradiating a laser beam from the back side to vaporize all or part of the first adhesive layer 102. Accordingly, the first adhesive layer 102 is made of a substance that causes a peeling phenomenon in the layer or at the interface by the laser light. Further, a laser beam that passes through the first fixed substrate 101 and is absorbed by the first adhesive layer is appropriately selected. For example, if a quartz substrate is used as the first fixed substrate, a YAG laser (fundamental wave (1064 nm
), Second harmonic (532 nm), third harmonic (355 nm), fourth harmonic (266 nm)
Alternatively, an excimer laser (wavelength 308 nm) may be used to form a linear beam and pass through a quartz substrate. The excimer laser does not pass through the glass substrate. Therefore, if a glass substrate is used as the first fixed substrate, the fundamental wave, the second harmonic, and the third of the YAG laser.
Harmonics can be used. Preferably, a linear beam is formed using the second harmonic (wavelength of 532 nm) and passed through the glass substrate.

The step of separating the first fixed substrate by laser irradiation may be performed after the second fixed substrate is bonded, or may be performed before liquid crystal injection and sealing.

Finally, a liquid crystal display device in which a liquid crystal material is sandwiched between an element formation substrate that is a resin substrate and a second fixed substrate that is a resin substrate is completed.

In addition, as shown in FIG. 17, liquid crystal in which an element formation layer (including a liquid crystal material, a pixel electrode, and a TFT element) is sandwiched between an element formation substrate 103 that is a resin substrate and a second fixed substrate 106 that is a resin substrate. The display device has flexibility that does not break even if some stress is generated. FIG. 17A shows a state when no curvature is given, and FIG. 17B shows a state when a curvature is given. In FIG. 17B, compressive stress acts on the element formation substrate and tensile stress acts on the second fixed substrate, but almost no stress acts on the element formation layer, and the expansion and contraction in the central portion is ± 1 μm or less. It can be. It should be noted that there is no problem even if a curvature with a radius of curvature of up to 10 cm is given.

The present invention having the above-described configuration will be described in more detail with the following examples.

In this embodiment, an example of a method for manufacturing a liquid crystal display device in which a liquid crystal material is sandwiched between an element formation substrate which is a resin substrate and a second fixed substrate which is a resin substrate will be described with reference to FIGS. Here, all the steps are performed at 350 ° C. or lower, preferably 200 ° C. or lower. However, it goes without saying that the present invention is not limited to this embodiment.

First, a glass substrate is used as the first fixed substrate 101. Then, the first fixed substrate 101 and the element formation substrate 103 which is a resin substrate were bonded to each other with the first adhesive layer 102 using any of the methods described in the embodiment. (Fig. 3 (A))

Next, after forming a base insulating film over the element formation substrate 103, necessary elements are formed over the base insulating film. Here, the pixel portion 1 having a driving circuit 104, a TFT element, and a pixel electrode.
An example of forming 05 is shown. (Fig. 3 (B))

As the base insulating film, a silicon oxynitride film containing more nitrogen elements than oxygen elements in the film composition and silicon oxynitride containing oxygen elements more than nitrogen elements in the film composition by using a sputtering method that can be formed at a low temperature A film was laminated.

Next, a semiconductor layer is formed over the base insulating film. The material of the semiconductor layer is not limited, but it is preferably formed of silicon or silicon germanium (Si x Ge 1-x (0 <X <1)) alloy. In this embodiment, an amorphous silicon film is formed by a sputtering method that can be formed at a low temperature, and a crystalline silicon film is formed by a laser crystallization method. When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, YAG laser, or YVO 4 laser can be used.

Next, a gate insulating film covering the semiconductor layer is formed. In this embodiment, the silicon oxide film is formed by a sputtering method that can be formed at a low temperature.

Next, a conductive layer is formed over the gate insulating film. For the conductive layer, a conductive film is formed by a known means (thermal CVD.
Film forming method, plasma CVD method, low pressure thermal CVD method, vapor deposition method, sputtering method, or the like), and then patterning to a desired shape using a mask.

Next, an impurity region for forming an LDD region, a source region, or a drain region is formed by appropriately adding an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity to the semiconductor layer by an ion implantation method or an ion doping method. Form.

After that, an interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by a sputtering method. The added impurity element is activated. Here, laser light irradiation was performed. Instead of laser light irradiation, activation may be performed by heat treatment at 350 ° C. or lower.

Next, a contact hole reaching the source region or the drain region is formed using a known technique, and then a source electrode or a drain electrode is formed to obtain a TFT.

Next, hydrogenation is performed using a known technique, and the whole is hydrogenated to form an n-channel TFT.
Alternatively, a p-channel TFT is completed. In this embodiment, the hydrogenation treatment was performed using hydrogen plasma that can be performed at a relatively low temperature.

Next, an interlayer insulating film is formed using a silicon nitride film, a silicon nitride oxide film, or a silicon oxide film manufactured by a sputtering method. Next, after forming a contact hole reaching the drain electrode of the pixel portion using a known technique, a pixel electrode made of a transparent conductive film such as ITO or SnO 2 is formed. In this embodiment, an example of a transmissive liquid crystal display device is shown as an example, but the embodiment is not particularly limited. For example, it is possible to manufacture a reflective liquid crystal display device by using a reflective metal material as the pixel electrode material and appropriately changing the patterning of the pixel electrode or adding / deleting some processes as appropriate. .

  Next, all elements included in the pixel portion and the driver circuit are covered with an insulating film (alignment film or the like).

Next, the insulating film that covers all the elements formed on the element formation substrate and the second fixed substrate 106 are bonded together by the second adhesive layer (sealing material) 107. Thereafter, a liquid crystal material is injected and sealed. (
3 (C)) As the second fixed substrate 106, a resin substrate may be used. A substrate provided with a DLC film as a protective film on one or both sides is used. A counter electrode and an alignment film for aligning liquid crystals are used. I have.

Next, the first fixed substrate 101 is separated by irradiating a laser beam from the back side to vaporize all or part of the first adhesive layer 102. (FIG. 3D) In this embodiment, since a glass substrate is used as the first fixed substrate, the fundamental wave, the second harmonic wave, and the third harmonic wave of the YAG laser are used.
Here, a linear beam is formed using the second harmonic (wavelength 532 nm), and the first fixed substrate 10 is formed.
The first adhesive layer was irradiated through a glass substrate 1.

Finally, a liquid crystal display device in which a liquid crystal material is held by an element formation substrate that is a resin substrate and a second fixed substrate that is a resin substrate is completed. Each film (insulating film, semiconductor film, conductive film, etc.) is formed by sputtering, and all processes can be performed at 350 ° C. or lower, preferably 200 ° C. or lower.

  This embodiment is an example of manufacturing a p-channel TFT and will be described with reference to FIGS.

First, the element formation substrate 4 bonded with the first fixed substrate 401 and the first adhesive layer 402 (separation layer).
A base insulating film 404 is formed on 03. As the base insulating film 404, a silicon oxide film, a silicon nitride film, a silicon nitride oxide film (SiOx Ny), or a stacked film of these is used.
It can be used in a film thickness range of ˜500 nm, and the formation means is a thermal CVD method, plasma C
A forming method such as a VD method, a vapor deposition method, a sputtering method, or a low pressure thermal CVD method can be used.

In this embodiment, a silicon oxynitride film containing a nitrogen element more than an oxygen element in a film composition and a silicon oxynitride film containing an oxygen element more than a nitrogen element in a film composition by using a sputtering method capable of film formation at a low temperature Were laminated.

The element forming substrate 4 bonded with the first fixed substrate 401 and the first adhesive layer 402 (separation layer).
Any of 03 manufactured by the method shown in the above embodiment can be applied.

Next, a semiconductor layer 405 is formed over the base insulating film. The semiconductor layer 405 is formed by forming a semiconductor film having an amorphous structure by a known means (thermal CVD method, plasma CVD method, reduced pressure thermal CVD method, vapor deposition method, sputtering method, or the like), and then known crystallization treatment. A crystalline semiconductor film obtained by performing (a laser crystallization method, a thermal crystallization method, or a thermal crystallization method using a catalyst such as nickel) is formed by patterning into a desired shape. The thickness of the semiconductor layer 405 is 20-10.
It is formed with a thickness of 0 nm (preferably 30 to 60 nm). The material of the crystalline semiconductor film is not limited, but is preferably silicon or silicon germanium (Si X Ge 1-X (0 <X <1)
) It is good to form with an alloy. In this embodiment, an amorphous silicon film is formed by a sputtering method that can be formed at a low temperature, and a crystalline silicon film is formed by a laser crystallization method. When a crystalline semiconductor film is formed by a laser crystallization method, a pulse oscillation type or continuous emission type excimer laser, YAG laser, or YVO 4 laser can be used.

Further, after the semiconductor layer 405 is formed, a small amount of impurity element (boron or phosphorus) may be doped in order to control the threshold value of the TFT.

Next, a gate insulating film 406 that covers the semiconductor layer 405 is formed. The gate insulating film 406 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by a plasma CVD method or a sputtering method. In this embodiment, the silicon oxide film is formed by a sputtering method that can be formed at a low temperature. (Fig. 4 (A))

Next, a conductive layer 408 is formed over the gate insulating film 406. The conductive layer 408 is formed by forming a conductive film by a known means (thermal CVD method, plasma CVD method, reduced pressure thermal CVD method, vapor deposition method, sputtering method, or the like), and then patterning the conductive film into a desired shape using a mask 407. Form.
As a material of the conductive layer 408, an element selected from Ta, W, Ti, Mo, Al, Cu, Cr, and Nd, or an alloy material or a compound material containing the element as a main component may be used. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus may be used. Further, an AgPdCu alloy may be used. In this embodiment, a W film is formed by patterning using a sputtering method that can be formed at a low temperature and patterned. The end portion of the conductive layer 408 is formed in a tapered shape. Etching conditions may be determined appropriately. For example, in the case of W, CF 4
Etching can be carried out satisfactorily by using a mixed gas of Al 2 and Cl 2 and biasing the substrate negatively.

Next, as shown in FIG. 4B, impurity regions (p + regions) 409 that form source and drain regions in a self-aligning manner are formed. This impurity region (p + region)
409 is formed by ion doping and is doped with an element belonging to Group 13 of the periodic table represented by boron. The impurity concentration of the impurity region (p + region) 409 is 1 × 10 20 to 2 × 10 21.
/ Cm 3 range.

Next, as illustrated in FIG. 4C, the conductive layer 410 is formed by etching so that the end portion of the conductive layer 408 recedes. In the structure of this embodiment, this is used as a gate electrode.
The formation of the gate electrode uses two etching steps, and the etching conditions are appropriately determined. For example, in the case of W, a mixed gas of CF 4 and Cl 2 is used, and the end can be satisfactorily processed into a tapered shape by negatively biasing the substrate. CF 4
By mixing oxygen with Cl 2 , anisotropic etching of W can be performed with good selectivity with respect to the base.

Thereafter, as shown in FIG. 4D, a p-type impurity (acceptor) is doped using the conductive layer 410 as a mask to form an impurity region (p− region) 411 in a self-aligning manner. The impurity concentration of the impurity region (p− region) 411 is set to be in the range of 1 × 10 17 to 2 × 10 19 / cm 3 .

After that, an interlayer insulating film 413 is formed using a silicon nitride film or a silicon nitride oxide film manufactured by a sputtering method or a plasma CVD method. The added impurity element is subjected to heat treatment at 350 to 500 ° C. or laser light irradiation for activation. Further, after forming a contact hole reaching the impurity region (p + region) using a known technique, a source electrode or a drain electrode 414 is formed to obtain a TFT.

Finally, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete a p-channel TFT. (FIG. 4E) In this example, hydrogenation treatment was performed using hydrogen plasma that can be performed at a relatively low temperature.

The semiconductor layer includes a channel formation region 412 and an LDD (impurity region (p− region)) formed by LDD (
A lightly doped drain) region 411 and a source or drain region 409 formed of an impurity region (p + region) are formed. Here, the p-channel TFT is shown with the LDD structure, but it is of course possible to manufacture it with a single drain or a structure in which the LDD overlaps with the gate electrode. A basic logic circuit is configured by using the p-channel TFT shown in this embodiment, or a more complicated logic circuit (signal division circuit, D / A converter, operational amplifier,
(gamma correction circuit etc.) can also be constructed, and further, a memory and a microprocessor can be formed. For example, the drive circuit of the liquid crystal display device can be entirely composed of p-channel TFTs.

  This embodiment can be combined with the first embodiment.

This embodiment is an example of manufacturing an n-channel TFT and will be described with reference to FIGS. In addition,
Since FIGS. 4A and 5A are the same, the same reference numerals are used and description of the manufacturing steps is omitted here.

After obtaining the state of FIG. 5A according to Embodiment 2, a resist mask 415 is formed by a light exposure process, and the semiconductor film 405 is doped with an n-type impurity (donor) by ion implantation or ion doping. (FIG. 5B) Impurity region (n-region) 4 to be produced
16, the doping concentration is in the range of 1 × 10 17 to 2 × 10 19 / cm 3 .

Next, the gate electrode 417 is formed using a conductive material containing one or more elements selected from tantalum, tungsten, titanium, aluminum, and molybdenum over the insulating film 406.
Form. (FIG. 5C) A part of the gate electrode 417 is formed so as to partially overlap with the impurity region (n− region) 416 with the gate insulating film interposed therebetween.

After that, as shown in FIG. 5D, an n-type impurity (donor) is doped using the gate electrode 417 as a mask to form an impurity region (n + region) 418 in a self-aligning manner. The impurity concentration of the impurity region (n + region) 418 is set to be in the range of 1 × 10 17 to 2 × 10 19 / cm 3 .

After that, an interlayer insulating film 419 is formed using a silicon nitride film or a silicon nitride oxide film manufactured by a plasma CVD method. In addition, the added impurity element is 350 ~
Heat treatment at 500 ° C. or laser light irradiation is performed. Further, a contact hole reaching the impurity region (n + region) is formed using a known technique, and then a source or drain electrode 420 is formed to obtain a TFT.

Finally, hydrogenation is performed using a known technique, and the whole is hydrogenated to complete an n-channel TFT. (FIG. 5E) In this example, hydrogenation treatment was performed using hydrogen plasma that can be performed at a relatively low temperature.

In the semiconductor layer, a channel formation region 419 and an LDD (n-region) formed by an impurity region (n−region)
A lightly doped drain) region 416 and a source or drain region 418 formed of an impurity region (n + region) are formed. Further, the LDD region 416 is formed so as to overlap with the gate electrode 417, and the concentration of the electric field at the drain end is relaxed to prevent deterioration due to hot carriers. Of course, an n-channel TFT with a single drain or LDD structure can also be manufactured. A basic logic circuit is configured by using the n-channel TFT shown in this embodiment, or a more complicated logic circuit (signal dividing circuit, D / A converter, operational amplifier, γ
Correction circuit, etc.) can also be configured, and a memory and a microprocessor can also be formed.
For example, the driving circuit of the liquid crystal display device can be entirely composed of n-channel TFTs.

  This embodiment can be combined with the first embodiment.

This embodiment is a CM in which an n-channel TFT and a p-channel TFT are combined in a complementary manner.
This is an example of manufacturing an OS circuit, which will be described with reference to FIGS.

In accordance with the second embodiment, a base insulating film is formed on the element formation substrate bonded with the first fixed substrate and the first adhesive layer (separation layer), and then the semiconductor layers 501 and 502 are formed. (Fig. 6 (A))

Next, the gate insulating film 503, the first conductive film 504, and the second conductive film 505 are formed by sputtering.
Form. (FIG. 6B) In this embodiment, the first conductive film 504 is formed of tantalum nitride or titanium to a thickness of 50 to 100 nm, and the second conductive film 505 is formed of tungsten of 100 to 30.
It is formed to a thickness of 0 nm.

Next, as shown in FIG. 6C, a resist mask 506 is formed, and a first etching process for forming a gate electrode is performed. The etching method is not limited, but preferably I
A CP (Inductively Coupled Plasma) etching method is used. CF 4 and Cl 2 are mixed in an etching gas, and 500 W of RF (13.56 MHz) power is applied to a coil-type electrode at a pressure of 0.5 to 2 Pa, preferably 1 Pa, to generate plasma. 100 W RF (13.56 MHz) power is also applied to the substrate side (sample stage), and a substantially negative self-bias voltage is applied. When CF 4 and Cl 2 are mixed, etching can be performed at a similar rate even in the case of a tungsten film, a tantalum nitride film, and a titanium film.

Under the above etching conditions, the end portion can be tapered by the shape of the resist mask and the effect of the bias voltage applied to the substrate side. The angle of the taper part is 15 to 45
To be °. In order to etch without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%. Since the selection ratio of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the surface where the silicon oxynitride film is exposed is etched by about 20 to 50 nm by the over-etching process. Thus, the first shape conductive layer 50 composed of the first conductive film and the second conductive film is formed by the first etching process.
7, 508 (first conductive layers 507a and 508a and second conductive layers 507b and 508b) are formed. Reference numeral 509 denotes a gate insulating film, and a region not covered with the first shape conductive layer is 20 to 50.
It is etched and thinned by about nm.

Next, a second etching process is performed as shown in FIG. 6D while the resist mask is left as it is. The ICP etching method is used for etching and CF is used as an etching gas.
4 and Cl 2 and O 2 are mixed, and 500 W of RF power (13.
56 MHz) is supplied to generate plasma. 50W RF on the substrate side (sample stage)
(13.56 MHz) Power is applied, and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched to leave the tantalum nitride film or titanium film as the first conductive layer. In this manner, second shape conductive layers 509 and 510 (first conductive films 509a and 510a and second conductive films 509b and 510).
b) is formed. Reference numeral 511 denotes a gate insulating film, and regions not covered with the second shape conductive layers 509 and 510 are removed. Although the removed example is shown here, the insulating film may be left thin.

Then, a first doping process is performed to dope n-type impurities (donors). (FIG. 7A) The method is performed by ion doping or ion implantation. As the impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As) is used.
In this case, the second shape conductive layers 509b and 510b serve as a mask with respect to an element to be doped, and an acceleration voltage is appropriately adjusted (for example, 70 to 120 keV), so that the gate insulating film 511 and the second conductive film 509a, The impurity region (by the impurity element that has passed through the taper portion 510a (
n-region) 512 is formed. For example, the phosphorus (P) concentration in the impurity region (n− region) is set in the range of 1 × 10 17 to 1 × 10 19 / cm 3 .

Next, after removing the mask, a mask 513 is formed, and a second doping process is performed as shown in FIG. The n-type impurity (donor) is doped under the condition of a higher acceleration voltage and lower acceleration voltage than in the first doping process. For example, the acceleration voltage is 20 to 60 keV,
An impurity region (n + region) 514 is formed by performing a dose of 1 × 10 13 to 5 × 10 14 / cm 2 . For example, the phosphorus (P) concentration in the impurity region (n + region) is 1 × 10 20 to 1 × 1.
The range is 0 21 / cm 3 .

Then, after removing the resist, as shown in FIG.
5 is doped, and the island-shaped semiconductor layer 501 forming the p-channel TFT is doped with a p-type impurity (acceptor). Typically, boron (B) is used.
The impurity concentration of the impurity regions (p + regions) 516 and 517 is 2 × 10 20 to 2 × 10 21 / cm 3.
Then, boron of 1.5 to 3 times the concentration of phosphorus contained is added to reverse the conductivity type.

Through the above steps, impurity regions are formed in each island-like semiconductor layer. The second shape conductive layers 509 and 510 serve as gate electrodes. After that, as shown in FIG. 7D, a protective insulating film 518 made of a silicon nitride film or a silicon oxynitride film is formed by a plasma CVD method. Then, a process of activating the impurity element added to each island-like semiconductor layer is performed for the purpose of controlling the conductivity type.

Further, a silicon nitride film 519 is formed and hydrogenation is performed. In this embodiment, the hydrogenation treatment was performed using hydrogen plasma that can be performed at a relatively low temperature.

The interlayer insulating film 520 is formed of an organic insulating material such as polyimide or acrylic. Of course,
Although a silicon oxide film formed using TEOS (Tetraethyl Ortho silicate) by plasma CVD may be applied, it is preferable to use the organic material from the viewpoint of improving flatness.

Next, contact holes are formed, aluminum (Al), titanium (Ti)
Source wirings or drain wirings 521 to 523 are formed using tantalum (Ta) or the like.

Through the above process, C is a complementary combination of an n-channel TFT and a p-channel TFT.
A MOS circuit can be obtained.

The p-channel TFT has a channel formation region 524 and impurity regions 516 and 517 functioning as a source region or a drain region.

The n-channel TFT includes a channel formation region 525, an impurity region 512a (Gate Overlapped Drain) that overlaps with the gate electrode 510, an impurity region 512b (LDD region) formed outside the gate electrode, and a source region or a drain region. A functioning impurity region 514 is provided.

Such a CMOS circuit makes it possible to form a drive circuit for an active matrix liquid crystal display device. In addition, such an n-channel TFT or a p-channel TFT can be applied to a transistor forming the pixel portion.

By combining such CMOS circuits, basic logic circuits can be configured, and more complex logic circuits (signal division circuits, D / A converters, operational amplifiers, γ correction circuits, etc.) can be configured, and memory It is also possible to form a microprocessor.

  This embodiment can be combined with the first embodiment.

The n-channel TFT shown in Example 3 has a periodic table of 15 in a semiconductor to be a channel formation region.
By adding an element belonging to the group (preferably phosphorus) or an element belonging to the group 13 of the periodic table (preferably boron), the enhancement type and the depletion type can be separately formed.

When an NMOS circuit is formed by combining n-channel TFTs, an enhancement type TFT is formed (hereinafter referred to as an EEMOS circuit), or an enhancement type and a depression type are combined (hereinafter referred to as an EDMOS circuit). Called).

Here, FIG. 8A shows an example of an EEMOS circuit, and FIG. 8B shows an example of an EDMOS circuit. In FIG. 8A, reference numerals 31 and 32 denote enhancement-type n-channel TFTs (hereinafter referred to as E-type NTFTs). In FIG. 8B, 33 is an E-type NTFT, 3
Reference numeral 4 denotes a depletion type n-channel TFT (hereinafter referred to as a D-type NTFT).

8A and 8B, VDH is a power supply line to which a positive voltage is applied (positive power supply line).
VDL is a power supply line (negative power supply line) to which a negative voltage is applied. The negative power source line may be a ground potential power source line (ground power source line).

Further, FIG. 9 shows an example in which a shift register is manufactured using the EEMOS circuit shown in FIG. 8A or the EDMOS circuit shown in FIG. In FIG. 9, reference numerals 40 and 41 denote flip-flop circuits. Reference numerals 42 and 43 denote E-type NTFTs. A clock signal (CL) is input to the gate of the E-type NTFT 42, and a clock signal (CL bar) having an inverted polarity is input to the gate of the E-type NTFT 43. Reference numeral 44 denotes an inverter circuit. As shown in FIG. 9B, the EEMOS circuit shown in FIG.
The EDMOS circuit shown in B) is used. Therefore, it is possible to configure all the drive circuits of the liquid crystal display device with n-channel TFTs.

  In addition, this embodiment can be combined with Embodiment 1 or Embodiment 3.

Here, an example in which a liquid crystal display device is manufactured using the TFTs obtained in Examples 2 to 5 will be described below with reference to FIGS.

FIG. 10 shows an example of a liquid crystal display device having a pixel portion and a driving circuit for driving the pixel portion on the same insulator (but before the liquid crystal material is sealed). Note that a CMOS circuit serving as a basic unit is shown in the driver circuit, and one pixel is shown in the pixel portion. This CMOS circuit and the TFT of the pixel portion are the same as those in Example 4.
You can get it if you follow.

In FIG. 10, reference numeral 601 denotes a first fixed substrate, 602 denotes a first adhesive layer, 603 denotes an element formation substrate, on which a driving circuit 608 including an n-channel TFT 605 and a p-channel TFT 604, and an n-channel TFT. A pixel TFT 606 and a storage capacitor 607 are formed. In this embodiment, all TFTs are formed by top gate type TFTs.

The description of the p-channel TFT 604 and the n-channel TFT 605 is omitted because it is only necessary to refer to the fourth embodiment. The description of the pixel TFT 606 formed of an n-channel TFT is omitted here because the first or third embodiment may be referred to. The pixel TFT 606 has a structure (double gate structure) having two channel formation regions between the source region and the drain region. Refer to the description of the structure of the n-channel TFT in Example 3. Since it can be easily understood, the description is omitted. Note that this embodiment is not limited to the double gate structure, and may be a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed.

In this embodiment, the pixel electrode 610 connected to the drain region of the pixel TFT is a reflective electrode. As a material of the pixel electrode 610, it is desirable to use a material having excellent reflectivity such as a film containing Al or Ag as a main component or a laminated film thereof. In addition, the pixel electrode 610
After forming the film, it is preferable to increase the whiteness by adding a step such as a known sandblasting method or etching method to make the surface uneven, thereby preventing specular reflection and scattering the reflected light.

12 is a cross-sectional view taken along the dotted line AA ′ in FIG. The conductive layer 712 functioning as a gate electrode also serves as one electrode of a storage capacitor of an adjacent pixel, and forms a capacitor in a portion overlapping with the semiconductor layer 753 connected to the pixel electrode 752.
The arrangement relationship between the source wiring 707, the pixel electrode 724, and the adjacent pixel electrode 751 is as follows.
By providing end portions of the pixel electrodes 724 and 751 on the source wiring 707 and forming overlapping portions, stray light is blocked and the light shielding property is improved.

After obtaining the state of FIG. 10, an alignment film is formed on the pixel electrode 610 and a rubbing process is performed. In this embodiment, before forming the alignment film, a columnar spacer (not shown) for holding the substrate interval is formed at a desired position by patterning an organic resin film such as an acrylic resin film. Further, instead of the columnar spacers, spherical spacers may be scattered over the entire surface of the substrate.

Next, a second fixed substrate (counter substrate) is prepared. Next, after forming a colored layer and a light-shielding layer on the counter substrate second fixed substrate, a planarizing film is formed. Next, a counter electrode made of a transparent conductive film was formed on the planarization film at least in the pixel portion, an alignment film was formed on the entire surface of the counter substrate, and a rubbing process was performed.

Then, the element formation substrate on which the pixel portion and the drive circuit are formed and the second fixed substrate are connected to the second adhesive layer (
In this embodiment, they are bonded together with a sealing material). A filler is mixed in the second adhesive layer, and two substrates are bonded to each other with a uniform interval by the filler and the columnar spacer.
Thereafter, a liquid crystal material is injected between both substrates and completely sealed with a sealant (not shown).
A known liquid crystal material may be used as the liquid crystal material.

Next, after the liquid crystal sealing (or sealing) step was performed, the first fixed substrate was separated by laser irradiation as described in the embodiment and Example 1. The state of the liquid crystal display device thereafter will be described with reference to FIG.

The top view shown in FIG. 11 shows a pixel portion, a drive circuit, an FPC (flexible printed wiring board: Fl
A sealing material includes an external input terminal for attaching an exible printed circuit), an element forming substrate on which wiring 81 for connecting the external input terminal and the input portion of each circuit is formed, and a counter substrate 82 provided with a color filter or the like. 83 are attached to each other.

A light shielding layer 86 a is provided on the second fixed substrate side so as to overlap with the gate side driving circuit 84, and a light shielding layer 86 b is formed on the second fixed substrate side so as to overlap with the source side driving circuit 85. Further, the color filter 88 provided on the second fixed substrate side on the pixel portion 87 includes a light shielding layer and red (R
), Green (G), and blue (B) color layers are provided corresponding to each pixel. When actually displaying, a red (R) colored layer, a green (G) colored layer, and a blue (B) colored layer 3
A color display is formed with colors, and the arrangement of the colored layers of these colors is arbitrary.

Here, the color filter 88 is provided on the second fixed substrate for the purpose of colorization, but there is no particular limitation. When an element is formed on the element formation substrate, the color filter may be formed on the element formation substrate. Good.

In addition, a light-shielding layer is provided between adjacent pixels in the color filter to shield light other than the display area. Here, the light shielding layer 86a, also in the region covering the drive circuit,
Although the region 86b is provided, the region that covers the driver circuit is covered with a cover when the liquid crystal display device is incorporated later as a display portion of an electronic device, and thus may not have a light shielding layer. Further, when a necessary element is manufactured on the element formation substrate, a light shielding layer may be formed on the element formation substrate.

Further, without providing the light-shielding layer, between the second fixed substrate and the counter electrode, the colored layers constituting the color filter are appropriately disposed so as to be shielded from light by laminating a plurality of layers. The gap between the pixel electrodes) and the drive circuit may be shielded from light.

An FPC 89 made of a base film and wiring is bonded to the external input terminal with an anisotropic conductive resin. Furthermore, the mechanical strength is increased by the reinforcing plate.

  A polarizing plate (not shown) is attached only to the second fixed substrate.

The liquid crystal display device manufactured as described above can be used as a display portion of various electronic devices.

  This embodiment can be combined with the first embodiment.

  In this embodiment, a circuit configuration example of the liquid crystal display device shown in Embodiment 6 is shown in FIG.

Note that FIG. 13A illustrates a circuit configuration for performing analog driving. In this embodiment, a source side driver circuit 90, a pixel portion 91, and a gate side driver circuit 92 are provided.
Note that in this specification, the drive circuit is a generic name including a source side processing circuit and a gate side drive circuit.

The source side driver circuit 90 includes a shift register 90a, a buffer 90b, and a sampling circuit (transfer gate) 90c. The gate side driving circuit 92 includes a shift register 92a, a level shifter 92b, and a buffer 92c. Note that the shift registers shown in FIG. 16 may be used as the shift registers 90a and 92a. Further, if necessary, a level shifter circuit may be provided between the sampling circuit and the shift register.

In this embodiment, the pixel unit 91 includes a plurality of pixels, and each of the plurality of pixels includes a TFT.
An element is provided.

These source side driver circuit 90 and gate side driver circuit 92 can all be formed of N-channel TFTs. In this case, all the circuits are formed with the EEMOS circuit shown in FIG. 8A as a basic unit. However, the power consumption is slightly increased as compared with the conventional CMOS circuit.

Further, the source side driving circuit 90 and the gate side driving circuit 92 are all made of p-channel type T
It can also be formed by FT.

Although not shown, a gate side drive circuit may be further provided on the opposite side of the gate side drive circuit 92 with the pixel portion 91 interposed therebetween.

In the case of digital driving, as shown in FIG. 19B, a latch (A) 93b and a latch (B) 93c may be provided instead of the sampling circuit. Source side drive circuit 93
Includes a shift register 93a, a latch (A) 93b, a latch (B) 93c, a D / A converter 93d, and a buffer 93e. The gate side driving circuit 95 includes a shift register 95a, a level shifter 95b, and a buffer 95c. The shift register 9
The shift registers shown in FIG. 9 may be used as 3a and 95a. If necessary, a level shifter circuit may be provided between the latch (B) 93c and the D / A converter 93d.

The source side driving circuit 93 and the gate side driving circuit 95 are all made up of an N channel type T
It can be formed by FT.

The source side driving circuit 93 and the gate side driving circuit 95 are all made of p-channel type T
It can also be formed by FT.

In addition, the said structure can be implement | achieved according to the manufacturing process shown in the said Example 2, 3, or 4. Further, although only the configuration of the pixel portion and the drive circuit is shown in this embodiment, a memory or a microprocessor can be formed according to the manufacturing process of this embodiment.

In this embodiment, an example of a liquid crystal display device in which TFTs used for a pixel portion and a driver circuit are formed of inverted staggered TFTs is shown in FIG. 14A is an enlarged top view of one of the pixels in the pixel portion. In FIG. 14A, a portion cut along a dotted line AA ′ is a cross section of the pixel portion in FIG. Corresponds to the structure.

In FIG. 14B, reference numeral 50a denotes a first fixed substrate, 51 denotes a first adhesive layer, and 50b denotes an element formation substrate. First, according to the embodiment, the first fixed substrate 50a and the first adhesive layer 51 (separation layer) )
The element formation substrate 50b bonded in step 1 is prepared. Note that a base insulating film may be formed over the element formation substrate if necessary.

In the pixel portion, the pixel TFT portion is formed of an N-channel TFT. A gate electrode 52 is formed on a substrate 51, and a first insulating film 53a made of silicon nitride and a second insulating film 53b made of silicon oxide are provided thereon. On the second insulating film, n @ + regions 54 to 56, channel forming regions 57 and 58 as active layers, and n @-type regions 59 and 60 are formed between the n @ + type region and the channel forming region. Is done. The channel forming regions 57 and 58 are formed of the insulating layer 6.
1 and 62. After a contact hole is formed in the first interlayer insulating film 63 covering the insulating layers 61 and 62 and the active layer, a wiring 64 connected to the n + region 54 is formed, and an n + region 56 is formed.
A wiring 65 is connected to the substrate, and a passivation film 66 is formed thereon. And
A second interlayer insulating film 67 is formed thereon. Further, a third interlayer insulating film 68 is formed thereon, and a pixel electrode 69 made of a transparent conductive film such as ITO or SnO 2 is connected to the wiring 65. Reference numeral 70 denotes a pixel electrode adjacent to the pixel electrode 69.

In this embodiment, an example of a transmissive liquid crystal display device is shown as an example, but the embodiment is not particularly limited. For example, it is possible to manufacture a reflective liquid crystal display device by using a reflective metal material as the pixel electrode material and appropriately changing the patterning of the pixel electrode or adding / deleting some processes as appropriate. .

In this embodiment, the gate wiring of the pixel TFT in the pixel portion has a double gate structure. However, a multi-gate structure such as a triple gate structure may be used in order to reduce variation in off current. Further, a single gate structure may be used in order to improve the aperture ratio.

The capacitor portion of the pixel portion is formed by the capacitor wiring 71 and the n + region 56 using the first insulating film and the second insulating film as dielectrics.

Note that the pixel portion illustrated in FIG. 14 is merely an example, and it is needless to say that the pixel portion is not particularly limited to the above configuration.

Further, all TFTs on the element formation substrate can be N-channel TFTs. If all TFTs on the element formation substrate are N-channel TFTs, the process of forming P-channel TFTs can be omitted, and the manufacturing process of the liquid crystal display device can be simplified. As a result, the yield of the manufacturing process is improved, and the manufacturing cost of the liquid crystal display device can be reduced.

In this embodiment, FIG. 15 shows an example of a liquid crystal display device in which all TFTs used in the pixel portion and the driving circuit are N-channel TFTs. In addition, the same code | symbol was used for the part corresponded to the location same as FIG. 10 of Example 6. FIG.

In FIG. 15, reference numeral 601 denotes a first fixed substrate, 602 denotes a first adhesive layer, and 603 denotes an element formation substrate. First, the first fixed substrate 601 and the first adhesive layer 602 (separation layer) are attached according to the embodiment. A base insulating film is formed over the attached element formation substrate 603.

On the base insulating film, a driver circuit including an N-channel TFT 1101 and an N-channel TFT 1102, a pixel TFT 1103 including an N-channel TFT, and a storage capacitor 1104 are formed. Note that description of the N-channel TFT is omitted because it is sufficient to refer to the third embodiment.

Here, unlike the sixth embodiment, it is an example of a transmissive liquid crystal display device. After forming the interlayer insulating film, a pixel electrode 1107 made of a transparent conductive film was formed by patterning, and then a contact hole was formed to form a connection electrode 1108 that connects the pixel electrode 1107 and the drain region of the pixel TFT 1103. Similarly, the pixel electrode 1107 and the storage capacitor 1104
A connection electrode 1109 was formed to connect the semiconductor region in FIG.

In addition, after obtaining the state of FIG. 15, the second fixed substrate is bonded with the second adhesive layer according to the process of Example 6, and then the first fixed substrate 601 is attached by irradiating the first adhesive layer 602 with a laser. The liquid crystal display device may be completed by separation.

By forming the gate side driver circuit and the source side driver circuit with only the N-channel TFT, the pixel portion and the driver circuit can all be formed with the N-channel TFT. Accordingly, the yield and throughput of the TFT process can be significantly improved in manufacturing an active matrix electro-optical device, and the manufacturing cost can be reduced.

Note that this embodiment can also be implemented when one of the source side driver circuit and the gate side driver circuit is an external IC chip.

In this embodiment, the drive circuit is configured using only the E-type NTFT, but it may be formed by combining the E-type NTFT and the D-type NTFT.

In this embodiment, FIG. 16 shows an example of a liquid crystal display device in which all TFTs used for the pixel portion and the driver circuit are P-channel TFTs. In addition, the same code | symbol was used for the part corresponded to the location same as FIG. 10 of Example 6. FIG.

In FIG. 16, reference numeral 601 denotes a first fixed substrate, 602 denotes a first adhesive layer, and 603 denotes an element formation substrate. First, the first fixed substrate 601 and the first adhesive layer 602 (separation layer) are attached according to the embodiment. A base insulating film is formed over the attached element formation substrate 603.

On the base insulating film, a driver circuit including a P-channel TFT 1201 and a P-channel TFT 1202, a pixel TFT 1203 including a P-channel TFT, and a storage capacitor 1204 are formed. Note that description of the P-channel TFT is omitted because it is only necessary to refer to the second embodiment.

Here, unlike the sixth embodiment, it is an example of a transmissive liquid crystal display device. After forming the interlayer insulating film, a pixel electrode 1207 made of a transparent conductive film was formed by patterning, and then a contact hole was formed to form a connection electrode 1208 that connects the pixel electrode 1207 and the drain region of the pixel TFT 1203. Similarly, the pixel electrode 1207 and the storage capacitor 1204 are also used.
A connection electrode 1209 is formed to connect the semiconductor region in FIG.

In addition, after obtaining the state of FIG. 16, the second fixed substrate is bonded to the second adhesive layer in accordance with the process of Example 6, and then the first adhesive layer 602 is irradiated with a laser to attach the first fixed substrate 601. The liquid crystal display device may be completed by separation.

By forming the gate side drive circuit and the source side drive circuit with only the P-channel TFT, the pixel portion and the drive circuit can all be formed with the P-channel TFT. Accordingly, the yield and throughput of the TFT process can be significantly improved in manufacturing an active matrix electro-optical device, and the manufacturing cost can be reduced.

Note that this embodiment can also be implemented when one of the source side driver circuit and the gate side driver circuit is an external IC chip.

As the element formation substrate, a metal substrate, for example, a stainless steel substrate can also be used. In this embodiment, an example in that case is shown below.

In this example, as the element formation substrate of Example 1, a stainless steel substrate (thickness 10 to 200 μm) was used.
m). First, according to the embodiment, the first fixed substrate and the stainless steel substrate are bonded together with the first adhesive layer.

Thereafter, according to the first embodiment, a necessary element may be formed by forming a base insulating film on an element formation substrate made of a stainless steel substrate. Note that unlike the first embodiment, a stainless steel substrate having high heat resistance is used, so that a TFT can be manufactured using a process at a higher temperature (about 500 ° C. or lower) than that of the first embodiment.

Since the stainless steel substrate is used when separating the first fixed substrate, the first fixed substrate is separated without affecting the elements formed on the element forming substrate even if the laser beam is irradiated. Can do.

In addition, since the stainless steel substrate has light shielding properties, the display device of this embodiment is a reflective liquid crystal display device.

By using a thin metal substrate (thickness of 10 to 200 μm), it is possible to obtain a light-emitting device that can be reduced in weight and thickness and has flexibility. Moreover, since the metal substrate is used, the heat radiation effect of the TFT element formed on the element substrate can be obtained.

In addition, this embodiment can be freely combined with any one of Embodiments 1 to 9.

The driving circuit and the pixel portion formed by implementing the present invention can be used in various electro-optical devices (active matrix liquid crystal display, active matrix EL display, active matrix EC display). That is, the present invention can be implemented in all electronic devices in which these electro-optical devices are incorporated in the display unit.

Such electronic devices include video cameras, digital cameras, head mounted displays (goggles type displays), car navigation systems, car stereos, personal computers, personal digital assistants (mobile computers, mobile phones, electronic books, etc.) and the like. . Examples of these are shown in FIGS.

FIG. 18A illustrates a personal computer, which includes a main body 2001, an image input portion 2002, a display portion 2003, a keyboard 2004, and the like. The present invention relates to an image input unit 2002 and a display unit 20.
03 and other driving circuits.

FIG. 18B illustrates a video camera, which includes a main body 2101, a display portion 2102, and an audio input portion 210.
3, an operation switch 2104, a battery 2105, an image receiving unit 2106, and the like. The present invention can be applied to the display portion 2102 and other driver circuits.

FIG. 18C shows a mobile computer, which is a main body 2201.
A camera unit 2202, an image receiving unit 2203, an operation switch 2204, a display unit 2205, and the like are included.
The present invention can be applied to the display portion 2205 and other driving circuits.

FIG. 18D shows a goggle type display, which includes a main body 2301, a display portion 2302, an arm portion 2303, and the like. The present invention can be applied to the display portion 2302 and other driving circuits.

FIG. 18E shows a player that uses a recording medium (hereinafter referred to as a recording medium) on which a program is recorded, and includes a main body 2401, a display portion 2402, a speaker portion 2403, a recording medium 2404,
Operation switch 2405 and the like are included. This player uses DVD (Dig as a recording medium).
(tial Versatile Disc), CD, etc. can be used for music appreciation, movie appreciation, games and the Internet. The present invention can be applied to the display portion 2402 and other driving circuits.

FIG. 18F illustrates a digital camera, which includes a main body 2501, a display portion 2502, and an eyepiece portion 2503.
, An operation switch 2504, an image receiving unit (not shown), and the like. The present invention can be applied to the display portion 2502 and other driving circuits.

FIG. 19A illustrates a mobile phone, which includes a main body 2901, an audio output unit 2902, and an audio input unit 29.
03, a display portion 2904, an operation switch 2905, an antenna 2906, and the like. The present invention can be applied to the audio output unit 2902, the audio input unit 2903, the display unit 2904, and other driving circuits.

FIG. 19B illustrates a portable book (electronic book), which includes a main body 3001 and display portions 3002 and 300.
3, a storage medium 3004, an operation switch 3005, an antenna 3006, and the like. The present invention can be applied to the display portions 3002 and 3003 and other driving circuits.

FIG. 19C illustrates a display, which includes a main body 3101, a support base 3102, and a display portion 3103.
Etc. The present invention can be applied to the display portion 3103. The display of the present invention is particularly advantageous when the screen is enlarged, and is advantageous for displays having a diagonal of 10 inches or more (particularly 30 inches or more).

As described above, the application range of the present invention is extremely wide and can be applied to electronic devices in various fields. Moreover, the electronic apparatus of a present Example is realizable even if it uses the structure which consists of what combination of Examples 1-10.

Claims (2)

  1. Form a structure where the polyimide layer is located on the substrate via organic matter,
    Forming a transistor on the polyimide layer;
    A liquid crystal material is provided on the transistor,
    After providing the liquid crystal material, the substrate is separated by irradiating the organic matter with laser light from the substrate side,
      The method for manufacturing a semiconductor device, wherein the substrate has higher heat resistance than the polyimide layer.
  2. Form a structure where the polyimide layer is located on the substrate via organic matter,
    Forming a transistor on the polyimide layer;
    A liquid crystal material is provided on the transistor,
    After providing the liquid crystal material, the substrate is separated by irradiating the organic matter with linear laser light from the substrate side,
      The method for manufacturing a semiconductor device, wherein the substrate has higher heat resistance than the polyimide layer.
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