JP5286841B2 - Photomask and method for manufacturing color filter using photomask - Google Patents

Description

The present invention relates to a color filter used for a liquid crystal display device and the like.

  In a color filter for a VA mode (Vertical Alignment mode, vertical alignment mode) liquid crystal display device, in addition to spacers, liquid crystal alignment protrusions (ribs) are formed. When forming spacers and ribs, Required two photolithography steps.

  Furthermore, in recent years, a method of forming a sub-spacer lower than the spacer has been devised in order to achieve both low-temperature foaming in the liquid crystal panel and suitability for external pressure. In this case, in addition to the spacer formation step and the rib formation step, a total of three photolithography steps are required including another sub-spacer formation step.

Therefore, it has been considered to use a halftone mask in order to reduce the photolithography process. A method of manufacturing a color filter using a halftone mask will be described with reference to FIG. The photomask 101 has a light shielding pattern 12, a halftone pattern 13, and a halftone pattern 49 on the substrate 11. The halftone pattern 13 and the halftone pattern 49 are the same material. When a positive photoresist coated on the light shielding layer 25 and the colored layer 27 on the substrate 23 is exposed and developed using the photomask 101, a color filter 102 is obtained. In the color filter 102, since the sub-spacer 51 is formed corresponding to the halftone pattern 49, it has the same height as the rib 19 formed corresponding to the halftone pattern 13, and is lower than the spacer 17. Therefore, the sub-spacer 51 does not serve as a sub-spacer.
That is, in the photomask 101, only two types of heights can be realized in the color filter 102, and it has been impossible to collectively form structures having three types of heights.

  A method of forming the spacer, the sub-spacer, and the rib at a time is also considered. FIG. 6 is a diagram showing a conventional photomask 103 and a conventional color filter 104. The photomask 103 has a light shielding pattern 12, a halftone pattern 13, and a light shielding pattern 53 on the substrate 11. The light shielding pattern 53 is made of the same material as the light shielding pattern 12 but has a narrow width. When a positive type photoresist coated on the light shielding layer 25 and the colored layer 27 on the substrate 23 is exposed and developed using the photomask 103, a color filter 104 is obtained. In the color filter 104, the sub spacer 55 is formed corresponding to the light shielding pattern 53. The light-shielding pattern 53 is narrow in width, and transmitted light that has passed around the light-shielding pattern 53 diffracts and circulates. Therefore, the sub-spacer 55 is lower than the spacer 17 formed by being shielded from light by the light-shielding pattern 12 (see, for example, Patent Document 1).

JP 2007-94064 A

  However, in the color filter 104, since the width of the light shielding pattern 53 is narrow, the width of the sub-spacer 55 is also narrowed, and there is a problem that the strength is not sufficient.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for forming a color filter spacer, sub-spacer, and rib with high quality by one-step photolithography. is there.

In order to achieve the above-described object, the first invention has a first light-shielding region composed of a light-shielding pattern, a light-shielding pattern at the center, and within 5 μm from the edge of the light-shielding pattern around the light-shielding pattern. a step of the second light shielding region, with a third light blocking area consisting halftone pattern, a photomask having a, exposing the substrate to a positive photoresist is applied with a halftone pattern on the substrate The portion corresponding to the first light-shielding region and the portion corresponding to the second light-shielding region are high corresponding to the central light-shielding pattern, and the portion corresponding to the surrounding halftone pattern is low sub spacer, a rib corresponding to the third light-blocking region, and forming a baking said substrate, from said sub-spacers, the center of the sub-spacer And a lower portion around the high portion are softened and fused by heat, and a sub-spacer lower in height than the spacer, and a rib lower than the sub-spacer from the rib, forming a method for producing a color filter characterized by ingredients Bei to Rukoto a. The width of the light shielding pattern in the second light shielding region is preferably 50 μm or less. Moreover, it is preferable that the width | variety of the said halftone pattern of a said 2nd light-shielding area | region is 2 micrometers or more.

According to a second aspect of the present invention, the light-shielding portion has a first opening region having an opening pattern and an opening pattern in the center, and the periphery of the opening pattern is halfway within 5 μm from the end of the opening pattern. developing a second opening region having a tone pattern, a third opening region consisting of the halftone pattern using a photomask and a step of exposing a substrate to negative photoresist is applied, the substrate In addition, the spacer corresponding to the first opening region and the portion corresponding to the central opening pattern are high and the portion corresponding to the surrounding halftone pattern is low corresponding to the second opening region. a spacer, a rib corresponding to the third opening region, and forming a baking said substrate, from said sub-spacers, the central high portion of the sub-spacers, Serial and a lower part of the periphery of the high portion is fused is softened by heat, and the sub-spacers lower height than the spacer, from the rib, and forming a rib lower than the sub-spacers a method of manufacturing a color filter, wherein ingredients Bei to Rukoto a. The width of the opening pattern in the second opening region is preferably 50 μm or less. Moreover, it is preferable that the width | variety of the said halftone pattern of a said 2nd opening area | region is 2 micrometers or more.

  According to the present invention, it is possible to provide a method for forming a color filter spacer, sub-spacer, and rib with high quality by one-step photolithography.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  A method of manufacturing the color filter 4 according to the first embodiment will be described with reference to FIG. When a color filter 2 coated with a positive photoresist 16 as shown in FIG. 1B is exposed and developed using a photomask 1 as shown in FIG. 1A, the result shown in FIG. A color filter 3 as shown is obtained. By baking the color filter 3, a color filter 4 as shown in FIG. 1D is obtained.

  FIG. 1A shows a photomask 1. The photomask 1 has a light shielding pattern 12, a halftone pattern 13, a light shielding pattern 14, and a halftone pattern 15 on a substrate 11. The light shielding pattern 12 is referred to as a first light shielding region, the light shielding pattern 14 and the halftone pattern 15 are referred to as a second light shielding region, and the halftone pattern 13 is referred to as a third light shielding region.

  As the substrate 11, a substrate generally used for a color filter can be used. For example, inflexible transparent rigid materials such as borosilicate glass, aluminoborosilicate glass, alkali-free glass, quartz glass, synthetic quartz glass, soda lime glass, white sapphire, transparent resin film, optical resin film, etc. A transparent flexible material having the following flexibility can be used. As the flexible material, acrylic such as polymethyl methacrylate, polyamide, polyacetal, polybutylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, triacetyl cellulose, syndiotactic polystyrene, polyphenylene sulfide, polyether ketone, polyether ether ketone, Examples include fluororesin, polyether nitrile, polycarbonate, modified polyphenylene ether, polycyclohexene, polynorbornene resin, polysulfone, polyethersulfone, polyarylate, polyamideimide, polyetherimide, thermoplastic polyimide, and the like. However, those made of general plastics can also be used. In particular, quartz glass is a material having a small coefficient of thermal expansion, and is excellent in dimensional stability and characteristics in high-temperature heat treatment.

  The light shielding pattern 12 substantially does not transmit exposure light, and the average transmittance at the exposure wavelength is preferably 0.1% or less. As the light shielding pattern 12, a light shielding film generally used for a photomask can be used, and examples thereof include chromium, chromium oxide, chromium nitride, chromium oxynitride, molybdenum silicide, tantalum, aluminum, silicon, silicon oxide, and silicon oxynitride. A membrane is mentioned. Of these, chromium-based films such as chromium, chromium oxide, chromium nitride, and chromium oxynitride are preferably used. This is because such a chromium-based film has the most use record and is preferable in terms of cost and quality. This chromium-based film may be a single layer or may be a laminate of two or more layers.

  The thickness of the light shielding pattern 12 is not particularly limited, and for example, in the case of a chromium film, it can be set to about 50 nm to 150 nm.

  As the film formation method of the light shielding pattern 12, for example, a physical vapor deposition method (PVD) such as a sputtering method, an ion plating method, or a vacuum vapor deposition method is used.

  After the film formation, the light shielding pattern 12 is patterned. The patterning method is not particularly limited, but usually a lithography method is used.

  The halftone pattern 13 is not particularly limited, and examples thereof include films of oxides such as chromium, molybdenum silicide, tantalum, aluminum, and silicon, nitrides, and carbides. From the advantage that the halftone pattern 13 and the light shielding pattern 12 can be patterned by the same etching equipment and process, it is preferable that the halftone pattern 13 and the light shielding pattern 12 are films made of similar materials. Since the light shielding pattern 12 is preferably a chromium-based film as described above, the halftone pattern 13 is also preferably a chromium-based film such as chromium oxide, chromium nitride, chromium oxynitride, or chromium oxynitride carbide. In addition, these chromium-based films have excellent mechanical strength and are stable, so that a mask that can withstand long-term use can be obtained.

  Particularly, the element ratio of the halftone pattern 13 is such that the metal content is preferably 97% or more, and more preferably 99% or more. Further, the nitrogen content is preferably 3% or less, and more preferably 2% or less. Furthermore, the oxygen content is preferably 3% or less, and more preferably 2% or less.

  The halftone pattern 13 may be a single layer or may be composed of a plurality of layers. Thus, a multi-tone mask having a plurality of transmittances can be obtained.

  The film thickness of the halftone pattern 13 can be about 5 to 50 nm in the case of a chromium film, for example, and can be about 5 to 150 nm in the case of a chromium oxide film. Since the transmittance of the halftone pattern 13 varies depending on the film thickness, the desired transmittance can be obtained by controlling the film thickness. Further, when the halftone pattern 13 contains oxygen, nitrogen, carbon, or the like, the transmittance varies depending on the composition. Therefore, the desired transmittance can be realized by simultaneously controlling the film thickness and the composition.

  As a film formation method of the halftone pattern 13, for example, a physical vapor deposition method (PVD) such as a sputtering method, an ion plating method, or a vacuum vapor deposition method is used. For example, when forming a chromium oxynitride chromium carbide film using a sputtering method, a reactive gas sputtering method using a Cr target by introducing a carrier gas such as Ar gas, oxygen (carbonic acid) gas, or nitrogen gas into the reactor. Thus, a chromium oxynitride carbide carbide film can be formed. At this time, the composition of the chromium oxynitride carbide film can be controlled by controlling the flow rates of Ar gas, oxygen (carbonic acid) gas, and nitrogen gas.

  After film formation, patterning is performed to form a halftone pattern 13.

  The second light shielding region includes a circular light shielding pattern 14 and a circular halftone pattern 15 formed concentrically with the light shielding pattern 14 as shown in FIG. The second light-shielding region may be not only a circular shape but also a ring shape having a polygonal outer shape, or a belt-like pattern as shown in FIG. The width A of the light shielding pattern 14 shown in FIGS. 2A and 2B is preferably 2 to 50 μm, and more preferably 2 to 30 μm. Further, the width B of the halftone pattern 15 shown in FIGS. 2A and 2B is preferably 2 μm or more. Further, the halftone pattern 15 does not need to surround the entire light-shielding pattern 14 but may be only partially attached. Further, it is not necessary to connect the light shielding pattern 14 and the halftone pattern 15. The halftone pattern 15 is preferably within 5 μm from the end of the light shielding pattern 14.

  Further, in a baking process, a sub spacer 21 described later is integrated so that the photoresist developed corresponding to the light shielding pattern 14 and the photoresist developed corresponding to the halftone pattern 15 are integrated. The width of the second region is preferably 200 μm or less.

  The light shielding pattern 14 and the halftone pattern 15 are formed by the same material and the same process as the halftone pattern 13.

  FIG. 1B is a diagram showing the color filter 2 before exposure. The color filter 2 has a light shielding layer 25 and a colored layer 27 on a substrate 23, and a positive type photoresist 16 is applied on the entire surface.

  The positive photoresist is not particularly limited, and a commonly used one can be used. Specifically, a chemically amplified photosensitive resin using a novolac resin as a base resin can be used. Moreover, it is preferable to have thermoplasticity.

  For the substrate 23, a material used for the substrate 11 can be used.

  The light shielding layer 25 is also referred to as a black matrix, has a plurality of openings, is formed so that light that does not pass through the colored pixels does not pass through the color filter 1, and preferably has an average transmittance of 0.1% or less. . The light shielding layer 25 can be formed by forming a resin layer using a photosensitive resin composition containing a light shielding material such as carbon fine particles and metal oxide, and patterning the resin layer. In this case, the thickness of the light shielding layer 25 is about 0.5 to 4 μm.

  As the light-shielding substance, a mixture of pigments such as red, blue, and green can be used in addition to metal oxide powder such as carbon black, titanium oxide, and iron tetroxide, metal sulfide powder, and metal powder.

  As the photosensitive resin composition, any of a negative photosensitive resin and a positive photosensitive resin can be used. In addition, the coloring of resin is not ask | required.

  The negative photosensitive resin is not particularly limited, and a commonly used negative photosensitive resin can be used.

  Moreover, it does not specifically limit as positive type photosensitive resin, What is generally used can be used.

  The light shielding layer 25 can also be formed by forming a metal thin film of chromium or the like by, for example, a sputtering method or a vacuum deposition method and patterning the metal thin film. In this case, the thickness of the light shielding layer 25 is about 5 to 500 nm.

  The colored layer 27 is a layer for coloring the transmitted light, and is formed of a photosensitive resin composition containing a pigment such as a red layer, a green layer, or a blue layer. As the photosensitive resin composition, among the photosensitive resin compositions similar to the photosensitive resin composition used for the light shielding layer 25, a transparent resin can be used. The thickness of the colored layer 27 is about 0.5 to 5 μm.

  The colored layer 27 is formed so as to cover the opening of the light shielding layer 25. The colored layer 27 may overlap the light shielding layer 25, or the light shielding layer 25 and the colored layer 27 may be adjacent to each other.

  The color filter 2 has a transparent electrode layer (not shown) in addition.

  FIG. 1C shows the color filter 3. The color filter 3 has a light shielding layer 25 and a colored layer 27 on the substrate 23, a spacer 17 and a sub-spacer 21 on the light shielding layer 25, and a rib 19 on the colored layer 27.

  The color filter 3 is produced by exposing the color filter 2 using the photomask 1 and developing.

  The spacer 17 is formed corresponding to the first light shielding region, the sub-spacer 21 is formed corresponding to the second light shielding region, and the rib 19 is formed corresponding to the third light shielding region.

  Since the halftone pattern 13 does not completely shield the exposure light, the rib 19 formed by the partially exposed photoresist 16 has a height higher than the spacer 17 formed by the completely shielded photoresist 16. Lower.

  The sub-spacer 21 has a high portion corresponding to the light shielding pattern 14 and a low portion corresponding to the halftone pattern 15.

  FIG. 1D is a diagram illustrating the color filter 3. The color filter 4 is obtained by post-baking the color filter 3, and has a light shielding layer 25 and a colored layer 27 on the substrate 23, and has a spacer 29 and a sub-spacer 33 on the light shielding layer 25. Ribs 31 are provided on the colored layer 27.

  The positive photoresist 16 after development has thermoplasticity and softens during post-baking.

  The spacer 29 is rounded because the spacer 17 is softened by heat during post-baking.

  The ribs 31 are also rounded because the ribs 19 are softened by heat during post-baking.

  The rib 31 is also referred to as an alignment control protrusion, and has a function of giving a pretilt angle to nearby liquid crystal molecules and a function of distorting the lines of electric force in a desired direction, so that a plurality of alignment directions of the liquid crystal molecules in the liquid crystal layer are formed. It is a member that can be controlled in the direction.

  In the sub-spacer 33, a high portion at the center of the sub-spacer 21 and a low portion around the soft spacer are softened and fused to form a structure having a wide width and a short height as a whole. Since the sub-spacer 33 is wide, it can receive pressure from the outside.

  The sub-spacer 33 is lower than the spacer 29. Normally, the cell gap is secured only by the spacer 29. However, when a load is applied to the liquid crystal cell, both the sub-spacers 33 are subjected to an external load within the range in which the spacer 29 exhibits elastic deformation. The load resistance characteristics of the cell can be improved.

  According to the first embodiment, the spacer 29, the sub-spacer 33, and the rib 31 can be manufactured together. In addition, when the photomask 1 is manufactured, since there are only two processes of a light shielding pattern manufacturing process and a halftone pattern manufacturing process, the photomask manufacturing process can be simplified.

  In addition, according to the first embodiment, the sub-spacer 33 is a high-quality sub-spacer having a high strength because it has a large upper base.

  Further, according to the first embodiment, by changing the sizes of the light shielding pattern 14 and the halftone pattern 15, the structure of the sub-spacer 21 can be changed, and the height and width of the post-baking sub-spacer 33 can be freely set. Can be controlled.

  Next, a method for manufacturing the color filter 8 according to the second embodiment will be described. In the following embodiment, the same number is attached | subjected to the element which fulfill | performs the same aspect as the photomask 1 etc. concerning 1st Embodiment, and the duplicate description is avoided.

  When the color filter 6 coated with the positive photoresist 16 as shown in FIG. 3B is exposed and developed using the photomask 5 as shown in FIG. 3A, the result shown in FIG. A color filter 7 as shown is obtained. By baking the color filter 7, a color filter 8 as shown in FIG. 3D is obtained.

  FIG. 3A shows the photomask 5. The photomask 5 has a light shielding pattern 12, a halftone pattern 13, and a light shielding pattern 35 on a substrate 11. The light shielding pattern 12 forms a first light shielding region, the light shielding pattern 35 forms a second light shielding region, and the halftone pattern 13 forms a third light shielding region.

  The light shielding pattern 35 is made of the same material as the light shielding pattern 12, but is wider than the light shielding pattern 12.

  FIG. 3B shows the color filter 6 before exposure. The color filter 6 has a photoresist 16 on the light shielding layer 25 and the colored layer 27 formed on the substrate 23, and has the same structure as the color filter 2.

  FIG. 3C shows the color filter 7. The color filter 7 has a light shielding layer 25 and a colored layer 27 on the substrate 23, a spacer 17 and a sub-spacer 37 on the light shielding layer 25, and a rib 19 on the colored layer 27. The color filter 7 is obtained by exposing the color filter 6 using the photomask 5 and developing.

  The sub-spacer 37 is formed corresponding to the second region of the photomask 5 and has the same height as the spacer 17, but the sub-spacer 37 is wider.

  FIG. 3D shows the color filter 8. The color filter 8 is formed by post-baking the color filter 7.

  The sub-spacer 39 is lower than the sub-spacer 37 by post-baking. This is because the sub-spacer 37 is sufficiently wide so that when it is softened due to thermoplasticity, the height is lowered.

  According to the second embodiment, three types of structures having different heights, that is, the spacer 29, the sub-spacer 39, and the rib 31 can be collectively created.

  Further, according to the second embodiment, since the photomask 5 is manufactured by only two processes, ie, a light shielding pattern manufacturing process and a halftone pattern manufacturing process, the photomask manufacturing process can be simplified.

  Further, according to the second embodiment, the sub-spacer 39 has a wide upper base and high rigidity.

  In order to form the spacer 17, the rib 19 and the sub-spacer 21 of the color filter 3, or to form the spacer 17, the rib 19 and the sub-spacer 37 of the color filter 7, a negative photosensitive resin may be used. . In the case of using a negative photosensitive resin, a portion with a light shielding pattern of the photomasks 1 and 5 becomes an opening, a light shielding pattern is formed at a portion without the light shielding pattern, and the presence or absence of the light shielding pattern is reversed. Photomasks 9 and 10 as shown in FIGS. 4A and 4B are used. The color filters 3 and 7 can be formed by exposing and developing a color filter obtained by coating a negative photoresist on the substrate 23 having the light shielding layer 25 and the colored layer 27 using the photomasks 9 and 10. .

Hereinafter, the present invention will be specifically described using experimental examples.
(Production of gradation mask)
A commercially available photoresist (ip-3500, manufactured by Tokyo Ohka Kogyo Co., Ltd.) is placed on a conventional mask blank in which a chromium film (light-shielding film) is formed to a thickness of 100 nm on an optically polished 390 mm × 610 mm synthetic quartz substrate. After coating with a thickness of 600 nm and baking with a hot plate heated to 120 ° C. for 15 minutes, a desired light-shielding pattern was drawn with a photomask laser drawing apparatus (LRS11000-TFT3 manufactured by Micronic).
Next, development was performed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern for a light shielding film.
Next, the resist pattern was used as an etching mask, the chromium film was etched, and the remaining resist pattern was stripped to obtain a desired light-shielding pattern. A commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) was used for etching the chromium film. The etching time for the chromium film was 60 seconds.

Next, the substrate on which the light-shielding pattern is formed is subjected to pattern dimension inspection, pattern defect inspection, pattern correction as necessary, and after being thoroughly washed, a chromium nitride film (halftone pattern) is formed by sputtering under the following conditions: A film was formed.
<Film formation conditions>
・ Gas flow ratio Ar: N ₂ = 5: 1
・ Power: 1.3kW
・ Gas pressure: 3.5mTorr
The film thickness of the chromium nitride film was 10 nm.
Next, a commercially available photoresist (ip-3500 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied again on the chromium nitride film at a thickness of 600 nm and baked on a hot plate heated to 120 ° C. for 15 minutes.
Subsequently, an image to be a halftone pattern was again drawn with a laser drawing device (LRS11000-TFT3 manufactured by Micronic) and developed with a dedicated developer (NMD3 manufactured by Tokyo Ohka Kogyo Co., Ltd.) to obtain a resist pattern.
Next, using the resist pattern as a mask, the chromium nitride film and the chromium film were etched with a commercially available cerium nitrate wet etchant (MR-ES manufactured by The Inktec Co., Ltd.) to obtain a halftone pattern and a light shielding pattern.
Finally, the remaining resist was stripped, and after undergoing inspection processes such as pattern dimension inspection and pattern defect inspection, pattern correction was performed as necessary to obtain a photomask.

(Pattern formation using a photomask)
A glass substrate having a size of 100 mm × 100 mm and a thickness of 0.7 mm was prepared, and a positive photosensitive resist (LC100VL manufactured by Rohm and Haas Co.) was applied on the glass substrate by a spin coat method. Pre-baked at 3 ° C. for 3 minutes. Then, it exposed on the following conditions through the photomask.
<Exposure conditions>
・ Exposure dose: 50 mJ / cm ² (I-line conversion)
・ Exposure gap: 150μm

  Next, development was performed using an aqueous potassium hydroxide solution, and then heat treatment was performed at 230 ° C. for 30 minutes as a post bake to form a convex pattern.

[Experiment 1]
In one mask, a circular chromium film (Cr 30 μm) with a diameter of 30 μm, a circular chromium film with a diameter of 18 μm (Cr 18 μm), a circular chromium film with a diameter of 5 μm, and a halftone pattern with a diameter of 30 μm are concentric. A mask provided with a light shielding region (Cr 5 μm + HT 30 μm) was prepared, and the positive photoresist was exposed and developed under the above conditions.

[Experiment 2]
A mask in which a circular chromium film having a diameter of 20 μm, 30 μm, 40 μm, and 60 μm was provided in one mask was produced, and the positive photoresist was exposed and developed under the above conditions.

  The cross-sectional shape of the pattern formed using the masks of Experimental Example 1 and Experimental Example 2 was observed with a scanning electron microscope, and the dimensions were measured. The results for Experimental Example 1 are shown in Table 1, and the results for Experimental Example 2 are shown in Table 2.

  As shown in Table 1, the sub-spacer is lower than the spacer. Further, the size of the upper base of the sub-spacer corresponding to the mask of Cr 5 μm + HT 30 μm is larger than that of the sub-spacer corresponding to the mask of Cr 18 μm, and the sub-spacer corresponding to the mask of Cr 5 μm + HT 30 μm has higher strength.

  As shown in Table 2, the height of the structure is low regardless of whether the mask size is 30 μm or less and the diameter is small or large. Therefore, by using a structure corresponding to a mask having a diameter of 30 μm as a spacer and a structure corresponding to a mask having a diameter of 60 μm as a sub-spacer, a high spacer and a low, wide and strong sub-spacer can be obtained. Can do.

  As mentioned above, although suitable embodiment, such as the manufacturing method of the color filter concerning this invention, was demonstrated, referring an accompanying drawing, this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the technical idea disclosed in the present application, and these are naturally within the technical scope of the present invention. Understood.

The figure which shows the manufacturing method of the color filter 4 which concerns on 1st Embodiment. (A) The top view of the 2nd light shielding area | region concerning 1st Embodiment, (b) The top view of another Example of the 2nd light shielding area | region concerning 1st Embodiment. The figure which shows the manufacturing method of the color filter 8 which concerns on 2nd Embodiment. (A) The photomask 9 concerning another Example of 1st Embodiment, (b) The figure which shows the photomask 10 which concerns on another Example of 2nd Embodiment. The figure which shows (a) photomask 101 and (b) color filter 102 based on conventional embodiment. The figure which shows (a) photomask 103 and (b) color filter 104 based on conventional embodiment.

Explanation of symbols

1 ... Photomask 2, 3, 4 ......... Color filter 5 ......... Photomask 6, 7, 8 ......... Color filter 9, 10 ......... Color filter 11 ...... Substrate 12 ...... Light shielding Pattern 13... Halftone pattern 14... Shading pattern 15... Halftone pattern 16... Photoresist 17 ... Spacer 19 ... Rib 21 ... Subspacer 23 ... Substrate 25 ...... Light-shielding layer 27 .... Colored layer 29 .... Spacer 31 .... Rib 33 .... Sub-spacer 35 .... Light-shielding pattern 37 .... Sub-spacer 39 .... Sub-spacer 41 .... Light-shielding pattern. 43 ……… Halftone pattern 45 ……… Shading pattern 47 ……… Halftone pattern 49 ……… Halftone pattern 51 ……… Subspacer 3 ......... shielding pattern 55 ......... sub spacer 101 ......... photomask 102 ......... color filter 103 ......... photomask 104 ......... color filter

Claims (6)

A first light-shielding region comprising a light-shielding pattern;
A second light-shielding region having a light-shielding pattern in the center, and having a halftone pattern within 5 μm from an end of the light-shielding pattern around the light-shielding pattern;
A third light-blocking region comprising a halftone pattern;
Exposing a substrate coated with a positive type photoresist using a photomask having:
Developing the substrate ;
A spacer corresponding to the first light shielding region;
Corresponding to the second light shielding region, a sub-spacer having a high location corresponding to the central light shielding pattern and a low location corresponding to the surrounding halftone pattern;
Forming a rib corresponding to the third light shielding region ;
Baking the substrate ;
From the sub-spacer, a high portion of the center of the sub-spacer and a low portion around the high portion are softened and fused by heat, and a sub-spacer having a lower height than the spacer,
Forming ribs lower than the sub-spacers from the ribs ;
Method of manufacturing a color filter according to the characteristics of the ingredients Bei to Rukoto. 2. The method of manufacturing a color filter according to claim 1, wherein a width of the light shielding pattern in the second light shielding region is 50 μm or less . 3. The method for manufacturing a color filter according to claim 1 , wherein a width of the halftone pattern of the second light shielding region is 2 μm or more. 4. A first opening region comprising an opening pattern in the light shielding portion;
A second opening region having an opening pattern in the center, and having a halftone pattern within 5 μm from an end of the opening pattern around the opening pattern;
A third opening area comprising a halftone pattern;
Using a photomask having
Exposing a substrate coated with a negative photoresist;
Developing the substrate;
A spacer corresponding to the first opening region;
Corresponding to the second opening region, a sub-spacer having a high location corresponding to the central opening pattern and a low location corresponding to the surrounding halftone pattern;
Forming a rib corresponding to the third opening region ;
Baking the substrate ;
From the sub-spacer, a high portion of the center of the sub-spacer and a low portion around the high portion are softened and fused by heat, and a sub-spacer having a lower height than the spacer,
Forming ribs lower than the sub-spacers from the ribs ;
Method of manufacturing a color filter according to the characteristics of the ingredients Bei to Rukoto. The color filter manufacturing method according to claim 4 , wherein a width of the opening pattern of the second opening region is 50 μm or less . 6. The color filter manufacturing method according to claim 4 , wherein a width of the halftone pattern in the second opening region is 2 μm or more .

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