JP5274383B2 - Substrate processing apparatus, substrate processing method, and storage medium storing substrate processing program - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, which satisfactorily process a substrate; and to provided a storage medium having a substrate processing program stored therein. <P>SOLUTION: The substrate processing apparatus (1) includes: a processing tank (24) for processing a substrate (2) with a processing liquid (23); a first chemical supply mechanism (25) for supplying a first chemical (21) to the processing tank (24); a second chemical supply mechanism (26) for supplying, to the processing tank (24), a second chemical (22) which reacts with the first chemical (21) to produce the processing liquid (23); a processing liquid-circulating mechanism (27) for circulating the processing liquid (23) by using a circulating flow path (45) connected to the processing tank (24); and a control part for controlling the supply of the first and second chemicals to the processing tank, wherein the substrate processing apparatus (1) circulates the processing liquid with a prescribed flow rate to process the substrate (2). With the use of the substrate processing apparatus, supply of the second chemical (22) is started, and the circulated flow rate is changed based on the start of supply of the second chemical (22). <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a substrate processing apparatus, a substrate processing method, and a storage medium storing a substrate processing program, and in particular, connects a processing liquid generated by reacting a first chemical and a second chemical to a processing tank. The present invention relates to a substrate processing apparatus, a substrate processing method, and a storage medium storing a substrate processing program for processing a substrate with a processing liquid inside a processing tank while being circulated using the circulation path.

  Conventionally, in the manufacturing process of semiconductor components, flat displays, electronic components, etc., in order to remove oxide films and resist films generated on the surface of substrates such as semiconductor wafers, liquid crystal substrates, and disk-shaped storage media, A substrate processing apparatus for cleaning the substrate is used.

  In this conventional substrate processing apparatus, a processing tank for processing a substrate with a processing liquid, a first chemical liquid supply mechanism for supplying a first chemical liquid to the processing tank, and a process that reacts with the first chemical liquid. A second chemical liquid supply mechanism for supplying a second chemical liquid for generating a liquid to the treatment tank, and a treatment liquid circulation mechanism for circulating the treatment liquid using a circulation channel connected to the treatment tank. The first and second chemical liquids are directly supplied from the first chemical liquid supply mechanism and the second chemical liquid supply mechanism to the inside of the processing tank, and the first chemical liquid and the second chemical liquid are reacted inside the processing tank. Then, the processing liquid is generated, and then the substrate is processed with the processing liquid inside the processing tank while circulating the processing liquid at a constant flow rate using a circulation channel connected to the processing tank (for example, , See Patent Document 1).

In the substrate processing apparatus disclosed in Patent Document 1, sulfuric acid is used as the first chemical solution, and hydrogen peroxide solution is used as the second chemical solution, and sulfuric acid and hydrogen peroxide solution are mixed inside the processing tank. As a result, sulfuric acid / hydrogen peroxide mixture (SPM) is generated and caroic acid (H ₂ SO ₅ : peroxomonosulfuric acid) is generated by reaction of sulfuric acid and hydrogen peroxide solution (H ₂ SO ₄ + H ₂ O ₂ → H ₂ SO ₅ + H ₂ O), the substrate surface was cleaned by the strong oxidizing power of this caloic acid.

JP-A-5-166780

  In the conventional substrate processing apparatus, the processing liquid inside the processing tank is always circulated at a constant flow rate by the processing liquid circulation mechanism while the substrate is processed inside the processing tank. The reaction between the first chemical solution and the second chemical solution is active and can be processed with a high-concentration treatment solution, but over time, the reaction between the first chemical solution and the second chemical solution slows down, reducing the concentration of the treatment solution. As a result, the substrate may not be processed well.

In the present invention, the processing tank for processing the substrate with the processing liquid, the first chemical liquid supply mechanism for supplying the first chemical liquid to the processing tank, and the first chemical liquid that reacts with the first chemical liquid to generate the processing liquid. A second chemical solution supply mechanism for supplying the second chemical solution to the treatment tank, a treatment liquid circulation mechanism for circulating the treatment liquid at a predetermined circulation flow rate using a circulation channel connected to the treatment tank, A controller that controls the supply of the second chemical liquid to the processing tank, and the control section outputs a signal instructing the second chemical liquid supply mechanism to start the supply of the second chemical liquid, and the processing liquid circulation The mechanism is controlled based on a signal instructing the start of supply of the second chemical solution to reduce the circulation flow rate.

  The second chemical solution has a natural degradation rate faster than that of the first chemical solution.

  The first chemical solution contains sulfuric acid, and the second chemical solution contains hydrogen peroxide.

  In addition, the control unit outputs a signal instructing to stop the supply of the second chemical liquid and controls the processing liquid circulation mechanism based on the signal instructing to stop the supply of the second chemical liquid to control the circulation flow rate. Increase.

  Further, the control unit controls the second chemical solution supply mechanism to supply the second chemical solution divided into a plurality of times.

  Further, the second chemical solution supply mechanism was connected in the middle of the circulation flow path.

Further, the substrate is treated with the treatment liquid inside the treatment tank while the treatment liquid produced by reacting the first chemical liquid and the second chemical liquid is circulated at a predetermined circulation flow rate using a circulation channel connected to the treatment tank. In the substrate processing method to be processed, the supply of the second chemical solution is started and the circulation flow rate is reduced based on the start of the supply of the second chemical solution.

  Further, the supply of the second chemical liquid is stopped and the circulation flow rate is increased based on the supply stop of the second chemical liquid.

  Further, the supply amount of the second chemical liquid is divided and supplied in a plurality of times.

In addition, a processing tank for processing the substrate with the processing liquid, a first chemical liquid supply mechanism for supplying the first chemical liquid to the processing tank, and a second liquid that reacts with the first chemical liquid to generate the processing liquid. A second chemical solution supply mechanism for supplying the chemical solution to the treatment tank; and a treatment liquid circulation mechanism for circulating the treatment solution using a circulation channel connected to the treatment tank, and the treatment liquid at a predetermined circulation flow rate. In a storage medium storing a substrate processing program for processing a substrate with a processing liquid inside a processing tank while circulating a processing liquid at a predetermined circulation flow rate using a substrate processing apparatus that circulates the substrate, The supply of the second chemical liquid is started and the circulation flow rate is reduced based on the start of the supply of the second chemical liquid.

  Further, the supply of the second chemical liquid is stopped and the circulation flow rate is increased based on the supply stop of the second chemical liquid.

  Further, the supply amount of the second chemical liquid is divided and supplied in a plurality of times.

  In this invention, the density | concentration of the process liquid produced | generated by reaction of a 1st chemical | medical solution and a 2nd chemical | medical solution can be maintained in a high state, and a board | substrate can be processed favorably.

The top view which shows a substrate processing apparatus. The schematic diagram which shows a board | substrate cleaning apparatus. The schematic diagram which shows a substrate processing method. The schematic diagram which shows a substrate processing method. The schematic diagram which shows a substrate processing method. The schematic diagram which shows a substrate processing method. The schematic diagram which shows a substrate processing method. Explanatory drawing which shows a substrate processing method. Explanatory drawing which shows a substrate processing method.

  In the following, specific embodiments of the present invention will be described with reference to the drawings, taking as an example a substrate processing apparatus for performing a cleaning process and a drying process on a semiconductor wafer (substrate).

  As shown in FIG. 1, a substrate processing apparatus 1 includes a carrier loading / unloading unit 4 that loads and unloads a carrier 3 that houses a plurality of semiconductor wafers (hereinafter referred to as “substrate 2”), and a carrier 3. The substrate loading / unloading unit 5 for loading and unloading the substrate 2 and the substrate processing unit 6 for cleaning and drying the substrate 2 are configured.

  The carrier loading / unloading unit 4 forms a sealed opening / closing door 8 on the carrier stage 7 on which the carrier 3 is placed, and a carrier transport mechanism 9, a carrier stock 10, and a carrier mounting table 11 are disposed inside the opening / closing door 8. doing.

  In the carrier loading / unloading unit 4, the carrier 3 placed on the carrier stage 7 by the carrier carrying mechanism 9 is temporarily stored in the carrier stock 10 as necessary, and is loaded on the carrier placing table 11. Yes. Further, the carrier loading / unloading unit 4 requires the carrier 3 mounted on the carrier mounting table 11, contrary to the time of loading, for the carrier 3 containing the substrate 2 processed by the substrate processing unit 6. Accordingly, the carrier is temporarily stored in the carrier stock 10 by the carrier transport mechanism 9 and is transported to the carrier stage 7.

  The substrate loading / unloading unit 5 forms a hermetic door 12 between the carrier loading / unloading unit 4 and a substrate loading / unloading mechanism 13 and a starting end of the substrate transporting mechanism 14 are arranged inside the opening / closing door 12. Has been established.

  In the substrate carry-in / out unit 5, the substrate 2 housed in the carrier 3 placed on the carrier placing table 11 of the carrier carry-in / out unit 4 is carried into the substrate carrying mechanism 14 by the substrate carry-in / out mechanism 13, and the substrate carrying mechanism The substrate 2 is transported to the substrate processing unit 6 by 14, while the substrate 2 processed by the substrate processing unit 6 is transported from the substrate processing unit 6 to the substrate loading / unloading mechanism 13 by the substrate transport mechanism 14, and the substrate is loaded / unloaded. The mechanism 13 is carried out from the substrate carrying mechanism 14 to the carrier 3 placed on the carrier placing table 11 of the carrier carry-in / out unit 4.

  The substrate processing unit 6 includes a substrate cleaning / drying device 15 that performs cleaning processing and drying processing of the substrate 2, substrate cleaning devices 16, 17, 18 that perform cleaning processing of the substrate 2, and a substrate 2 provided in the substrate transport mechanism 14. A cleaning device 20 for cleaning the holding body 19 to be held is disposed side by side, and a substrate transport mechanism 14 is disposed along these devices 15, 16, 17, 18, and 20.

  In the substrate processing unit 6, the substrate transport mechanism 14 transports the substrate 2 from the substrate carry-in / out unit 5 to the substrate cleaning / drying device 15 and the substrate cleaning devices 16, 17, 18, and performs cleaning processing and drying processing of the substrate 2. After that, the processed substrate 2 is transported again to the substrate carry-in / out unit 5 by the substrate transport mechanism 14.

  In the substrate processing unit 6, the holder 19 of the substrate transport mechanism 14 is cleaned by the cleaning device 20 so that the contaminants attached to the holder 19 are not transferred to the substrate 2.

  Next, a specific structure of the substrate cleaning apparatus 16 (17, 18) which is a main part of the present invention will be described.

  In this substrate cleaning device 16, as shown in FIG. 2, the first chemical solution 21 (here, sulfuric acid) and the second chemical solution 22 (here, the first chemical solution 21 is sulfuric acid) have a natural deterioration rate. The substrate 2 is treated with the treatment liquid 23 generated by the reaction with the fast hydrogen peroxide solution, and the treatment tank 24 for treating the substrate 2 with the treatment liquid 23 and the treatment tank 24 have the first A first chemical solution supply mechanism 25 for supplying the chemical solution 21, a second chemical solution supply mechanism 26 for supplying the second chemical solution 22 to the treatment tank 24, and a treatment solution circulation mechanism 27 for circulating the treatment solution 23. And a control unit 46 for controlling the processing tank 24, the first and second chemical liquid supply mechanisms 25, 26, the processing liquid circulation mechanism 27, and the like.

  In the treatment tank 24, a hollow rectangular annular outer tank 29 is attached to the outer periphery of the upper end of a hollow box-shaped inner tank 28 for storing the treatment liquid 23.

  In addition, the processing tank 24 is provided with a holder 30 for holding the substrate 2 in the inner tank 28 so as to be movable up and down between the inside and the upper side of the inner tank 28 and for discharging the processing liquid 23 to the bottom of the inner tank 28. A pair of left and right discharge nozzles 31 and 31 is provided, and a treatment liquid circulation mechanism 27 is provided between the outer tank 29 and the discharge nozzles 31 and 31.

  The first chemical liquid supply mechanism 25 connects a pump 33 to a storage container 32 that stores the first chemical liquid 21 supplied from a supply source, connects a flow rate adjustment valve 34 to the pump 33, and supplies a nozzle to the flow rate adjustment valve 34. 35 is connected, and the first chemical liquid 21 having the flow rate adjusted by the flow rate adjusting valve 34 is supplied from the storage container 32 to the treatment tank 24 (inner tank 28) via the supply nozzle 35.

  The second chemical solution supply mechanism 26 connects a pump 37 to a storage container 36 that stores the second chemical solution 22 supplied from a supply source, connects a flow rate adjustment valve 38 to the pump 37, and supplies a supply pipe to the flow rate adjustment valve 38. 39, and the supply pipe 39 is connected to the treatment liquid circulation mechanism 27. The second chemical liquid 22 having the flow rate adjusted by the flow rate adjustment valve 38 is supplied from the storage container 36 to the supply pipe 39 and the treatment liquid circulation mechanism 27. Through the treatment tank 24 (discharge nozzles 31, 31).

  The treatment liquid circulation mechanism 27 connects the start end of the upstream circulation pipe 40 to the bottom of the outer tank 29 of the treatment tank 24, and sequentially connects the pump 41, the heater 42, and the filter 43 to the end of the upstream circulation pipe 40. The downstream end of the downstream circulation pipe 44 is connected to the filter 43, and the discharge nozzles 31, 31 are connected to the terminal end of the downstream circulation pipe 44. A circulation channel 45 is formed to connect the discharge nozzles 31 and 31 in communication. In the second chemical solution supply mechanism 26, the supply pipe 39 is connected to the midway portion of the downstream circulation pipe 44 of the circulation flow path 45 constituting the treatment liquid circulation mechanism 27. However, the present invention is not limited to this, and the supply pipe 39 May be connected to the upstream side circulation pipe 40 of the circulation channel 45, and the supply pipe 39 may be directly connected to the inner tank 28 of the processing tank 24.

  The substrate cleaning device 16 is configured as described above, and the processing tank 24, the first chemical solution supply mechanism 25, the second chemical solution supply mechanism 26, the treatment solution circulation mechanism 27, etc. are stored in the storage medium of the control unit 46. By appropriately controlling with the substrate processing program, the substrate 2 is cleaned as described below.

  First, as shown in FIG. 3 and FIG. 8, the control unit 46 outputs a signal instructing the first chemical solution supply mechanism 25 to start supplying the first chemical solution 21, thereby pumping the first chemical solution supply mechanism 25. To supply a predetermined amount (for example, 40 liters) of the first chemical liquid 21 to the processing tank 24 and to control the processing liquid circulation mechanism 27 based on a signal instructing the start of the supply of the first chemical liquid 21. By outputting a signal to be controlled, the pump 41 of the processing liquid circulation mechanism 27 is driven at high speed and the first chemical liquid 21 is supplied at a relatively high flow rate (for example, 35 liter / ) (Circulate at high speed).

  Thereafter, the controller 46 outputs a signal instructing the second chemical liquid supply mechanism 26 to start supplying the second chemical liquid 22 as shown in FIGS. 4 and 8 after a predetermined time (40 seconds in this case) has elapsed. As a result, the pump 37 of the second chemical liquid supply mechanism 26 is driven to supply a predetermined amount (for example, 200 cc) of the second chemical liquid 22 to the circulation pipe 44 on the downstream side of the circulation flow path 45, The first chemical liquid 21 and the second chemical liquid 22 are reacted inside the tank 24 to generate the processing liquid 23, and the processing liquid circulation mechanism is based on a signal for instructing the start of the supply of the second chemical liquid 22. By changing the pump 41 of the processing liquid circulation mechanism 27 to low speed driving by outputting a signal for controlling the processing liquid 27, the processing liquid 23 is flowed at a relatively low flow rate (for example, 10 Liter / minute).

  Thereafter, the controller 46 lowers the holding tool 30 of the processing tank 24 by outputting a signal for controlling the processing tank 24 as shown in FIGS. 5 and 8 after a predetermined time (here, 20 seconds) has elapsed. Then, the substrate 2 is put into the inner tank 28 and the substrate 2 is immersed in the processing liquid 23 stored in the inner tank 28, and the cleaning process of the substrate 2 is started.

  As shown in FIGS. 6 and 8, the control unit 46 continues to drive the pump 37 of the second chemical solution supply mechanism 26 for a predetermined time (here, 20 seconds) to pass the second chemical solution 22 through the circulation channel 45. Is supplied to the downstream circulation pipe 44, and a command to stop the supply of the second chemical liquid 22 is issued after a predetermined time (in this case, 40 seconds) has elapsed since the output of the signal for instructing the supply start of the second chemical liquid 22 Is output to stop the driving of the pump 37 of the second chemical solution supply mechanism 26 and the supply of the second chemical solution 22 is stopped.

  Further, as shown in FIGS. 6 and 8, the control unit 46 continuously drives the pump 41 of the processing liquid circulation mechanism 27 at a low speed for a predetermined time (here, 60 seconds (80 seconds from the start of low speed driving)). The treatment liquid 23 is circulated (low-speed circulation) at a relatively low flow rate (for example, 10 liters / minute) using the circulation flow path 45 connected to the tank 24, thereby processing for a predetermined time (here, 60 seconds). The substrate 2 is cleaned while the liquid 23 is circulated at a low speed.

  Thereafter, as shown in FIGS. 7 and 8, the control unit 46 outputs a signal for controlling the processing liquid circulation mechanism 27 based on a signal for instructing the supply stop of the second chemical liquid 22. The pump 41 of the liquid circulation mechanism 27 is changed to high speed driving again, and the processing liquid 23 is circulated at a relatively high flow rate (for example, 35 liters / minute) using the circulation flow path 45 connected to the processing tank 24 (high speed circulation). Then, the substrate 2 is cleaned in a state where the processing liquid 23 is circulated at a high speed for a predetermined time (here, 180 seconds).

  As described above, in the substrate cleaning apparatus 16, the control unit 46 controls the first and second chemical liquid supply mechanisms 25 and 26 and the processing liquid circulation mechanism 27 based on the substrate processing program, as shown in FIG. Before the second chemical liquid supply mechanism 26 supplies the second chemical liquid 22, the processing liquid circulation mechanism 27 circulates the first chemical liquid 21 at a relatively high speed, and the second chemical liquid supply mechanism 26 circulates the second chemical liquid 22. At the same time as the supply is started, the processing liquid circulation mechanism 27 circulates the processing liquid 23 at a relatively low speed. After the second chemical liquid supply mechanism 26 stops the supply of the second chemical liquid 22, the processing liquid circulation mechanism 27 supplies the processing liquid 23. Circulation is made relatively fast. In FIG. 8, the processing time is based on the point in time when the substrate 2 is put into the inner tank 28, the substrate 2 is immersed in the processing liquid 23, and the cleaning process is started.

  Thereby, in the inner tank 28, the concentration of the second chemical liquid 22 rapidly increases immediately after the supply of the second chemical liquid 22 is started, and thereafter, the second chemical liquid 22 is circulated at a relatively low speed. The concentration of the second chemical solution 22 gradually decreases while the concentration of the second chemical solution 22 is circulating at a relatively high speed.

  Therefore, in the substrate cleaning apparatus 16, the circulation flow rate for circulating the processing liquid 23 increases while the substrate 2 is being processed with the processing liquid 23. Is relatively small, and the concentration of the treatment liquid 23 generated by the reaction between the first chemical liquid 21 and the second chemical liquid 22 can be kept high without replenishing the second chemical liquid 22 during the treatment. The deposits such as an oxide film and a resist film adhered to the surface of the substrate 2 with the high-concentration processing liquid 23 can be made to float from the surface of the substrate 2, and then the circulating flow rate of the processing liquid 23 during the processing As a result, the deposits can be peeled off from the surface of the substrate 2, whereby the substrate 2 can be satisfactorily processed without increasing the amount of the processing solution 23 used.

  In the substrate cleaning apparatus 16, the circulation flow rate is gradually increased from the low-speed circulation to the high-speed circulation while the substrate 2 is being processed with the processing liquid 23, but the circulation flow rate may be gradually increased continuously. Alternatively, the circulation may be temporarily stopped during the processing.

  In the substrate cleaning apparatus 16, the control unit 46 is controlled to change the circulation flow rate to the treatment liquid circulation mechanism 27 based on a signal instructing the second chemical liquid supply mechanism 26 to start the supply of the second chemical liquid 22. The circulation flow rate is not limited to the case where the circulation flow rate is reduced from the high-speed circulation to the low-speed circulation at the same time as the supply of the second chemical solution 22, and the circulation flow rate is reduced a predetermined time before or after the start of the supply of the second chemical solution 22. You may let them.

  Furthermore, in the substrate cleaning apparatus 16, the control unit 46 controls the second chemical solution supply mechanism 26 so that a predetermined amount (for example, 200 cc) of the second chemical solution 22 is continuously supplied. As shown in the figure, the second chemical liquid supply mechanism 26 divides a predetermined amount of the second chemical liquid 22 into small amounts (for example, every 100 cc) and supplies it after a predetermined time (here, 20 seconds) has passed. Good. The second chemical liquid 22 is not limited to being divided into two parts and supplied in the same amount, and may be supplied in multiple parts in different amounts.

  As described above, when the predetermined amount of the second chemical liquid 22 is divided and supplied (the change in concentration is indicated by a solid line in FIG. 9), when the predetermined amount of the second chemical liquid 22 is supplied at a time ( In FIG. 9, the change in concentration is indicated by a one-dot chain line.) Compared with the case of FIG. 9, it is possible to maintain an average high concentration state and improve the cleaning effect of the treatment liquid 23.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Substrate 3 Carrier 4 Carrier loading / unloading unit 5 Substrate loading / unloading unit 6 Substrate processing unit 7 Carrier stage 8 Open / close door 9 Carrier transport mechanism 10 Carrier stock
11 Carrier mounting table 12 Open / close door
13 Board loading / unloading mechanism 14 Board loading mechanism
15 Substrate cleaning / drying device 16,17,18 Substrate cleaning device
19 Holder 20 Cleaning device
21 1st chemical solution 22 2nd chemical solution
23 Treatment liquid 24 Treatment tank
25 First chemical supply mechanism 26 Second chemical supply mechanism
27 Treatment liquid circulation mechanism 28 Inner tank
29 Outer tank 30 Holder
31 Discharge nozzle 32 Storage container
33 Pump 34 Flow adjustment valve
35 Supply nozzle 36 Storage container
37 Pump 38 Flow adjustment valve
39 Supply pipe 40 Upstream circulation pipe
41 Pump 42 Heater
43 Filter 44 Downstream circulation pipe
45 Circulation channel 46 Control unit

Claims (12)

A processing tank for processing a substrate with a processing liquid, a first chemical liquid supply mechanism for supplying a first chemical liquid to the processing tank, and a second chemical liquid that reacts with the first chemical liquid to generate a processing liquid. A second chemical supply mechanism for supplying the treatment tank, a treatment liquid circulation mechanism for circulating the treatment liquid at a predetermined circulation flow rate using a circulation flow path connected to the treatment tank, and the first and second chemical liquids A control unit for controlling the supply to the treatment tank,
The control unit outputs a signal for instructing the second chemical liquid supply mechanism to start the supply of the second chemical liquid and controls the processing liquid circulation mechanism based on the signal for instructing the supply start of the second chemical liquid. The substrate processing apparatus is characterized by reducing the circulation flow rate.   The substrate processing apparatus according to claim 1, wherein the second chemical solution has a natural deterioration rate faster than that of the first chemical solution.   The substrate processing apparatus according to claim 1, wherein the first chemical solution includes sulfuric acid, and the second chemical solution includes hydrogen peroxide solution. The control unit outputs a signal instructing to stop the supply of the second chemical liquid and controls the processing liquid circulation mechanism based on the signal instructing to stop the supply of the second chemical liquid to increase the circulation flow rate. The substrate processing apparatus according to claim 1, wherein 5. The substrate processing apparatus according to claim 1 , wherein the control unit controls the second chemical solution supply mechanism to supply the second chemical solution divided into a plurality of times. . The substrate processing apparatus according to claim 1, wherein the second chemical liquid supply mechanism is connected in the middle of the circulation flow path. The substrate is treated with the treatment liquid inside the treatment tank while the treatment liquid produced by reacting the first chemical liquid and the second chemical liquid is circulated at a predetermined circulation flow rate using a circulation channel connected to the treatment tank. In the substrate processing method,
A substrate processing method characterized by starting the supply of the second chemical solution and reducing the circulation flow rate based on the start of the supply of the second chemical solution. The substrate processing method according to claim 7 , wherein the supply of the second chemical solution is stopped and the circulation flow rate is increased based on the supply stop of the second chemical solution. The substrate processing method according to claim 7, wherein the supply amount of the second chemical solution is divided and supplied in a plurality of times. A processing tank for processing a substrate with a processing liquid, a first chemical liquid supply mechanism for supplying a first chemical liquid to the processing tank, and a second chemical liquid that reacts with the first chemical liquid to generate a processing liquid. A second chemical solution supply mechanism for supplying the treatment tank and a treatment liquid circulation mechanism for circulating the treatment liquid using a circulation channel connected to the treatment tank, and circulates the treatment liquid at a predetermined circulation flow rate. In the storage medium storing the substrate processing program for processing the substrate with the processing liquid inside the processing tank while circulating the processing liquid at a predetermined circulation flow rate using the substrate processing apparatus for processing the substrate,
A storage medium storing a substrate processing program, wherein the supply of a second chemical liquid is started and the circulating flow rate is reduced based on the start of the supply of the second chemical liquid. The storage medium storing the substrate processing program according to claim 10 , wherein the supply of the second chemical liquid is stopped and the circulation flow rate is increased based on the supply stop of the second chemical liquid. The storage medium storing the substrate processing program according to claim 10 or 11 , wherein the supply amount of the second chemical liquid is divided and supplied in a plurality of times.

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