JP5262960B2 - Semiconductor Mach-Zehnder optical modulator and manufacturing method thereof, semiconductor optical integrated device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor Mach-Zehnder optical modulator for electrically separating each phase modulation region having high light transmittance, and to provide its manufacturing method, a semiconductor optical integrated element and its manufacturing method. <P>SOLUTION: The semiconductor Mach-Zehnder optical modulator has a core layer 13 and an upper clad layer 15 laminated on a substrate 11 and includes optical waveguides 1a, 1b, an MMI demultiplexer 2a, and an MMI multiplexer 2b thereon. A phase modulated region is provided on the optical waveguides 1a, 1b. The light emitted from the MMI demultiplexer 2a is phase-modulated on the optical waveguides 1a, 1b to be emitted to the MMI multiplexer 2b. The optical waveguides 1a, 1b are separated by a separation groove Gap of a length Lgap between the phase modulation region and the MMI demultiplexer 2a, and the phase modulation region and the MMI multiplexer 2b, and the width becomes thin continuously, as going toward the separation groove Gap. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a semiconductor Mach-Zehnder optical modulator having an optical waveguide and a semiconductor optical integrated device.

  The semiconductor optical integrated device is expected to be reduced in size and price by monolithically integrating regions having different functions such as a semiconductor laser, an optical amplifier, an optical modulator, a photodetector, and an optical waveguide. For example, in a semiconductor optical integrated device in which an optical modulator and a light source are monolithically integrated, it is desirable to employ an optimum waveguide structure in each region such as a high mesa waveguide structure, a BH (Buried Hetero) structure, and a ridge waveguide structure. .

  However, from the viewpoint of manufacturing a semiconductor optical integrated device, it is desirable to unify the waveguide structures within the device and form them collectively. In addition, due to the superiority of high temperature characteristics and modulated refractive index characteristics, the core layer is increasingly made of a composition containing Al, such as AlGaInAs and AlInAs. However, in the high mesa waveguide structure and the BH structure, the core layer containing Al is exposed in the manufacturing process. Therefore, it is necessary to pay attention to the influence of oxidation and pretreatment when the core layer is embedded with a semiconductor crystal. On the other hand, in the ridge waveguide structure, since the core layer containing Al is not exposed, there is no concern that the core layer is oxidized. Further, like the high mesa waveguide structure, the number of times of crystal growth is small, and the manufacturing process can be simplified. Therefore, in such a semiconductor optical integrated device, it is desirable to collectively form a ridge waveguide structure.

  It is also conceivable to apply a Mach-Zehnder (hereinafter referred to as MZ) optical modulator in order to operate the above-described semiconductor optical integrated device at high speed. In the MZ optical modulator, the two phase modulation regions must be individually driven by an electric field. Therefore, it is necessary to electrically isolate each phase modulation region. As such a method of electrical separation, the upper cladding layer in the multiplexing / demultiplexing region of the optical waveguide is replaced with a high resistance layer, or a separation groove is formed in the optical waveguide to spatially separate them (Patent Documents 1 to 5). The method 3) is taken.

  However, the former requires new processes for etching the upper cladding layer and re-growing the semiconductor crystal. Furthermore, there is a high possibility that problems will occur in the subsequent optical waveguide formation due to the unevenness of the joint surface where the semiconductor crystal is regrown.

  On the other hand, the latter also requires a new man-hour, and there is a concern that the core layer is oxidized when the separation groove is penetrated to the core layer. In order to prevent this, it is necessary to form an oxide film or a nitride film that protects the core layer, and to be filled with a thermosetting resin such as polyimide, which increases the number of steps. Further, when the separation groove is provided in the optical waveguide, a coupling loss occurs in a portion where the optical waveguide is separated, and the optical coupling efficiency of the guided wave is lowered.

  As a structure for solving the above problem, Patent Document 1 discloses that after forming a core layer, a cladding layer is selectively grown to simultaneously form an optical waveguide and a separation groove, and two phase modulator regions are electrically connected. A separate structure has been proposed. FIG. 8A is a cross-sectional view showing a cross-sectional structure of the semiconductor MZ optical modulator described in Patent Document 1 after selective growth when viewed from the light emission side. As shown in FIG. 8A, this semiconductor MZ optical modulator has a clad layer 32 made of n-type InP and a core layer 33 made of intrinsic InGaAsP on a substrate 31 having a (100) plane of n-type InP as a main surface. And the clad layer 34 made of intrinsic type InP is laminated in order. On the cladding layer 34, a dielectric mask 37 having an opening for growing a ridge structure waveguide is formed. In the opening of the dielectric mask 37, a clad layer 35 made of p-type InP and a cap layer 36 made of p-type InGaAs, which form a ridge structure waveguide, grown by a selective growth method, are formed.

  8B is a cross-sectional view taken along the line VIIB-VIIB shown in FIG. 8A. In this semiconductor MZ optical modulator, as in FIG. 8A, a clad layer 32, a core layer 33, and a clad layer 34 are sequentially laminated on a substrate 31. On the cladding layer 34, a dielectric mask 37 is formed in a portion where the isolation groove 38 is to be formed. In the portion where the dielectric mask 37 is not formed, a cladding layer 35 and a cap layer 36 constituting a ridge structure waveguide are formed by a selective growth method.

  Patent Document 3 discloses a structure that reduces a coupling loss with an optical fiber by forming an optical waveguide near the end face of the element into a tapered shape. Furthermore, Patent Document 4 discloses a structure in which a groove having a predetermined angle with an optical waveguide is provided between tapered optical waveguides.

Japanese Patent Laid-Open No. 9-021985 JP-A-9-105893 JP 2001-42149 A Japanese Patent Laid-Open No. 7-20359

  However, as in Patent Document 1, when the separation groove is formed by the selective growth method, there are problems such that the end face of the separation groove is inclined and the length of the separation groove cannot be formed sufficiently small. Arise. Further, the end face is not formed vertically. Accordingly, the transmittance of guided light is further reduced.

  Moreover, the taper part provided in the optical waveguide in Patent Document 3 enlarges the mode profile of light in the vicinity of the element end face, and no separation groove is provided. In Patent Document 4, end face reflection can be suppressed by a groove penetrating the core layer provided between the optical waveguides, but when the core layer containing Al is used, the end face is oxidized.

  That is, if the phase modulation regions are electrically separated from each other by providing a separation groove in the optical waveguide by the existing structure and manufacturing method, it is inevitable that the optical coupling efficiency is lowered.

  The present invention provides a semiconductor MZ optical modulator, a manufacturing method thereof, a semiconductor optical integrated device, and a manufacturing method thereof, which are provided with a separation groove in an optical waveguide to electrically isolate phase modulation regions from each other and have high light transmittance. The purpose is to do.

  A semiconductor Mach-Zehnder optical modulator which is one embodiment of the present invention includes a semiconductor substrate, a semiconductor stack including a core layer and a clad layer stacked on the semiconductor substrate, and an external formed on the semiconductor stack. A demultiplexer for demultiplexing incident light incident from the first, a second optical waveguide provided with phase modulation regions for modulating the phase of the light emitted from the demultiplexer, the first and the second A multiplexer that multiplexes light emitted from the second optical waveguide, and the first and second optical waveguides are between the phase modulation region and the duplexer; and The phase modulation region and the multiplexer are separated by a separation groove having a predetermined length, and the width continuously decreases toward the separation groove.

  A manufacturing method of a semiconductor Mach-Zehnder optical modulator which is one embodiment of the present invention includes a step of forming a semiconductor stacked body by stacking a core layer and a cladding layer on a semiconductor substrate, and demultiplexing incident light incident from the outside. The first and second optical waveguides provided with a duplexer, a phase modulation region for modulating the phase of the light emitted from the duplexer, and the first and second optical waveguides. And a step of forming a multiplexer for multiplexing light on the semiconductor stacked body, wherein the first and second optical waveguides are between the phase modulation region and the duplexer; and The phase modulation region and the multiplexer are separated by a separation groove having a predetermined length, and the width continuously decreases toward the separation groove.

  According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor optical integrated device, comprising: forming a diffraction grating in a region where a semiconductor laser is formed on a semiconductor substrate; and laminating an active layer on the semiconductor substrate and the diffraction grating. Etching, removing the active layer in the region for forming the semiconductor Mach-Zehnder optical modulator, and butt-joining the active layer to the region for forming the semiconductor Mach-Zehnder optical modulator on the semiconductor substrate. Laminating a core layer, laminating a cladding layer on the active layer and the core layer, a demultiplexer for demultiplexing incident light incident from the outside, and the demultiplexer emitted from the demultiplexer First and second optical waveguides provided with phase modulation regions for modulating the phase of light, and a multiplexer for multiplexing the light emitted from the first and second optical waveguides And forming the semiconductor Mach-Zehnder optical modulator in a region where the first and second optical waveguides are between the phase modulation region and the duplexer, and the phase. The modulation region and the multiplexer are separated by a separation groove having a predetermined length, and the width continuously decreases toward the separation groove.

  According to the present invention, it is possible to provide a semiconductor Mach-Zehnder optical modulator, a manufacturing method thereof, a semiconductor optical integrated device, and a manufacturing method thereof, in which each phase modulation region is electrically separated and has high light transmittance. .

1 is a top view showing a configuration of a semiconductor MZ optical modulator according to a first embodiment; 1 is a perspective view showing a cross-sectional configuration of a semiconductor MZ optical modulator according to a first embodiment; FIG. 6 is a perspective view showing a manufacturing process of the semiconductor MZ light modulator according to the first embodiment; FIG. 6 is a perspective view showing a manufacturing process of the semiconductor MZ light modulator according to the first embodiment; FIG. 6 is a perspective view showing a manufacturing process of the semiconductor MZ light modulator according to the first embodiment; FIG. 6 is a perspective view showing a manufacturing process of the semiconductor MZ light modulator according to the first embodiment; It is a contour map showing the light transmittance in the optical waveguide which formed the taper part. It is a contour map showing the light transmittance in the optical waveguide which formed the taper part. FIG. 6 is a top view showing a configuration of a semiconductor optical integrated device according to a second embodiment. FIG. 6 is a cross-sectional view schematically showing a cross section of a semiconductor optical integrated device according to a second embodiment. FIG. 10 is a cross-sectional view showing a manufacturing process of the semiconductor optical integrated device according to the second embodiment. FIG. 10 is a cross-sectional view showing a manufacturing process of the semiconductor optical integrated device according to the second embodiment. FIG. 10 is a cross-sectional view showing a manufacturing process of the semiconductor optical integrated device according to the second embodiment. FIG. 10 is a cross-sectional view showing a manufacturing process of the semiconductor optical integrated device according to the second embodiment. 10 is a cross-sectional view showing a manufacturing process of the semiconductor MZ optical modulator according to Patent Document 1. FIG. 10 is a cross-sectional view showing a manufacturing process of the semiconductor MZ optical modulator according to Patent Document 1. FIG.

Embodiments of the present invention will be described below with reference to the drawings. In the following, similar constituent elements are denoted by the same reference numerals, and description thereof will be omitted as appropriate.
Embodiment 1
A configuration of the semiconductor MZ optical modulator according to the first embodiment will be described. FIG. 1 is a top view of the semiconductor MZ optical modulator according to the first embodiment. As shown in FIG. 1, this semiconductor MZ optical modulator is provided with optical waveguides 1a and 1b. One end of the optical waveguides 1a and 1b is optically connected to an MMI (Multi Mode Interference) duplexer 2a. An MMI multiplexer 2b is optically connected to the other end. The optical waveguides 1a and 2a are provided with a phase modulation region that rotates the phase of light by an electric field. The optical waveguides 1a and 2a are separated by separation grooves Gap at both ends of the phase modulation region.

  An incident optical waveguide 3 that guides incident light is optically connected to the MMI duplexer 2a. An outgoing optical waveguide 4 that guides outgoing light is optically connected to the MMI multiplexer 2b.

Next, the cross-sectional structure in the vicinity of the separation groove Gap of the optical waveguides 1a and 1b of this semiconductor MZ optical modulator will be described by taking the optical waveguide 1a as an example. FIG. 2 is a perspective view showing a cross-sectional configuration in the vicinity of the separation groove Gap of the optical waveguide 1a of the semiconductor MZ optical modulator. As shown in FIG. 2, this semiconductor MZ optical modulator has, for example, a buffer layer 12 made of, for example, n-type InP (for example, a thickness) on a substrate 11 whose principal surface is n-type InP (100 face). 0.2 μm, carrier concentration 1 × 10 ¹⁸ cm ⁻³ ), core layer 13 having a quantum well structure made of AlGaInAs (for example, thickness 0.3 μm, emission wavelength 1.4 μm), etching stop layer 14 made of InGaAsP ( For example, an upper cladding layer 15 (for example, a thickness of 1.5 μm and a carrier concentration of 1 × 10 ¹⁸ cm ⁻³ ) made of p-type InP is formed.

  In the upper clad layer 15, an optical waveguide 1a having a ridge structure separated by a separation groove Gap is formed. In addition, the optical waveguide 1a is provided with a tapered portion whose width continuously decreases toward the separation groove Gap. Here, the length of the separation groove Gap is L gap, the length of the tapered portion is L taper, the width of the optical waveguide 1 a is W rib, and the width of the optical waveguide 1 a at the tip of the tapered portion is W taper.

  Next, a method for manufacturing this semiconductor MZ optical modulator will be described. 3A to 3D are perspective views in the vicinity of the separation groove Gap showing the manufacturing process of the semiconductor MZ optical modulator. First, as illustrated in FIG. 3A, the buffer layer 12, the core layer 13, the etching stop layer 14, and the upper cladding layer 15 are sequentially stacked on the substrate 11 by, for example, the MOVPE (Metal Organic Vapor Phase Epitaxy) method.

Next, as shown in FIG. 3B, a mask 16 made of SiO ₂ is formed by, for example, a CVD (Chemical Vapor Deposition) method and photolithography. The mask 16 is opened with a narrow width of about 1 μm in the separation groove Gap. In addition, the shape in the vicinity of the separation groove Gap is a tapered shape whose width becomes narrower as the separation groove Gap is approached.

  Next, as shown in FIG. 3C, the upper cladding layer 15 is anisotropically etched in the depth direction by dry etching to the vicinity of the etching stop layer 14 and not to expose the etching stop layer 14.

  Subsequently, as shown in FIG. 3D, the remaining upper clad layer 15 is selectively etched by, for example, wet etching using an etchant containing hydrochloric acid. Thereafter, the mask 16 is removed, and the semiconductor MZ light modulator shown in FIG. 2 can be manufactured.

  According to this configuration, since the separation grooves Gap are formed in the optical waveguides 1a and 1b, the optical waveguides 1a and 1b are electrically separated. Therefore, in the phase modulation region, it is possible to perform phase modulation by applying individual electric fields to the respective optical waveguides.

  However, when a separation groove is provided in the optical waveguide, the light transmittance generally decreases. Therefore, in this configuration, a decrease in light transmittance is suppressed by providing a tapered portion in the vicinity of the separation groove Gap of the optical waveguides 1a and 1b.

  In order to estimate the effect of providing the tapered portion in the optical waveguide, in the semiconductor MZ optical modulator according to the present configuration, the wavelength 1.55 μm when Wtaper, Ltaper, and Lgap are changed by BPM (Beam Propagation Method) analysis. The distribution of light transmittance for light was simulated. FIG. 4A is a contour diagram showing the light transmittance when W taper and L taper are changed with L gap = 1.5 μm. FIG. 4B is a contour diagram showing the light transmittance when Wtaper and Lgap are changed with Lteper = 25 μm.

  As shown in FIGS. 4 (a) and 4 (b), it can be seen that a decrease in light transmittance can be basically suppressed by reducing both Lgap and Wtaper. For example, as shown in FIG. 4B, in the case of Wtaper = 0.8 μm, Ltaper = 25 μm, and Lgap = 0.2 μm, the light transmittance can be about 95%.

  The above-mentioned simulation is performed for a taper shape in which the width of the optical waveguide changes linearly. For example, even if it changes in a function curve, the tendency does not differ greatly.

  In order to improve the electrical isolation effect, it is desirable to penetrate the isolation trench Gap to the core layer. However, in this case, there arises a problem that the optical coupling efficiency varies greatly depending on the shape of the separation groove and the smoothness of the end face. Furthermore, when using a core layer containing Al, it is necessary to protect the core layer with a thermosetting resin layer such as an oxide film, a nitride film, and polyimide in order to prevent the core layer from being exposed and oxidized. The man-hour increases. Therefore, in this configuration, the separation groove Gap is provided in the upper clad layer 15 in consideration of ensuring both the electrical separation effect and the optical coupling efficiency.

  In the high mesa waveguide structure, if the waveguide in the vicinity of the separation groove is tapered, light is radiated from the core layer and the light transmittance is greatly reduced, and the loss is increased. Therefore, providing the tapered portion in the optical waveguide is effective in a ridge waveguide structure in which only the upper cladding layer is separated without dividing the core layer.

  Further, according to the above manufacturing method, the separation groove Gap is formed mainly by dry etching. That is, the length Lgap of the separation groove can be reduced as compared with the case of forming by wet etching or selective growth. Furthermore, the end face of the separation groove having a shape excellent in perpendicularity can be formed, which is effective from the viewpoint of suppressing the decrease in optical coupling efficiency in the optical waveguides 1a and 1b.

  Furthermore, according to the manufacturing method described above, the optical waveguides 1a and 1b and the separation groove Gap can be formed at a time, so that the number of times of crystal growth does not increase as in the case of using the selective growth method, and the manufacturing process is simple. Cost reduction can be expected.

Embodiment 2
Also, a semiconductor optical integrated device can be formed by monolithically integrating the semiconductor MZ optical modulator according to the first embodiment on the same substrate as a light source such as a semiconductor laser. FIG. 5 is a top view showing the configuration of the semiconductor optical integrated device according to the second embodiment. In this semiconductor optical integrated device, as shown in FIG. 5, a semiconductor MZ optical modulator region 201 and a DFB (Distributed FeedBack laser) laser region 202 are integrated on the same substrate.

  In the semiconductor MZ optical modulator region 201, the optical waveguide 203 is optically connected to the MMI duplexer 2a. The optical waveguide 204 is optically connected to the MMI multiplexer 2b. Other configurations are the same as those in FIG.

  In the DFB laser region 202, an optical waveguide 203 extending from the semiconductor MZ optical modulator region 201 is provided.

  Next, the cross-sectional structure of this semiconductor optical integrated device will be described. FIG. 6 is a cross-sectional view schematically showing a cross section of this semiconductor optical integrated device. As shown in FIG. 6, this semiconductor optical integrated device includes a semiconductor MZ optical modulator region 201 and a DFB laser region 202.

In the semiconductor MZ optical modulator region 201, for example, a core layer 22 having a quantum well structure made of AlGaInAs (for example, a thickness of 0.3 μm, on a substrate 21 having a (100) plane of n-type InP as a main surface) (Emission wavelength 1.4 μm), etching stop layer 23 made of InGaAsP (for example, thickness 0.02 μm, emission wavelength 1.15 μm), cladding layer 24 made of p-type InP (for example, thickness 0.01 μm, carrier concentration) 1 × 10 ¹⁸ cm ⁻³ ) is formed.

  In the DFB laser region 202, for example, an active layer 26 having a quantum well structure made of a diffraction grating 25 and InGaAsP (for example, a thickness of 0.3 μm, an emission wavelength) on a substrate 21 common to the semiconductor MZ optical modulator region 201. 1.55 μm), a clad layer 27 (for example, 0.01 μm thick) made of p-type InP is formed. The active layer 26 is provided so as to cut into the semiconductor MZ light modulator region 201 side as compared with the cladding layer 27.

  The core layer 22 and the active layer 26 are optically connected to form a butt joint junction that couples the semiconductor MZ optical modulator region 201 and the DFB laser region 202 with a small coupling loss. Furthermore, since the clad layer 24 formed in the semiconductor MZ light modulator region 201 only needs to have a thickness that serves as an upper protective layer, it can be formed sufficiently thin. Therefore, there is no concern that a significant step is generated in the butt joint connection.

  Further, an upper cladding layer 28 is formed on the cladding layer 24 and the cladding layer 27. Although not shown, the optical waveguides 1 a and 1 b shown in FIG. 1 are formed in the upper cladding layer 28.

  Next, a method for manufacturing this semiconductor optical integrated device will be described. 7A to 7D are cross-sectional views showing a method for manufacturing this semiconductor optical integrated device. First, as shown in FIG. 7A, the diffraction grating 25 is formed in the DFB laser region 202 on the substrate 21. Next, the active layer 26 and the cladding layer 27 are sequentially stacked on the substrate 21 and the diffraction grating 25 by, for example, MOVPE.

Next, as shown in FIG. 7B, a mask 29 made of, for example, SiO ₂ is formed in the DFB laser region 202 by CVD and photolithography. Thereafter, the cladding layer 27 and the active layer 26 in the semiconductor MZ light modulator region 201 are removed by dry etching. At this time, the active layer 26 is etched to such an extent that the substrate 21 is not exposed.

  Subsequently, as shown in FIG. 7C, the remaining active layer 26 is selectively removed by wet etching using a mixed solution of sulfuric acid, hydrogen peroxide solution, and water. In wet etching, etching proceeds isotropically. Therefore, the active layer 26 has its interface receded to the semiconductor MZ light modulator region 201 side by side etching as compared with the cladding layer 27. As a result, the cladding layer 27 has a bowl shape with respect to the active layer 26.

  Next, as shown in FIG. 7D, the core layer 22, the etching stop layer 23, and the cladding layer 24 are formed in the semiconductor MZ optical modulator region 201 by, for example, the MOVPE method. Here, the core layer 22 is formed so as to be butt-joined with the active layer 26 in the DFB laser region 202. At this time, since the clad layer 27 has a bowl shape with respect to the active layer 26, it is possible to perform crystal growth while preventing abnormal growth at the joint portion of the butt joint joint. Furthermore, the clad layer 24 is formed to be sufficiently thin so as not to cause a significant step in the butt joint connection. Subsequently, the mask 29 is removed.

  Next, the upper clad layer 28 is laminated by, for example, the MOVPE method. Thereafter, as in the manufacturing process described in the first embodiment, optical waveguides are collectively formed in the semiconductor MZ optical modulator region 201 and the DFB laser region 202 to obtain the semiconductor optical integrated device according to the second embodiment. it can.

  That is, this semiconductor optical integrated device can be manufactured in the same process as the semiconductor MZ optical modulator alone, except for the process of joining the DFB laser region 202 and the butt joint. The heights of the active layer 26 and the etching stop layer 23 are substantially the same. Therefore, the height of the ridge waveguide formed by the combined use of dry etching and wet etching can be made uniform.

  Therefore, according to this configuration and the manufacturing method, the separation groove can be formed in the optical waveguide of the semiconductor MZ optical modulator region 201 simultaneously with the formation of the ridge waveguide. Therefore, it is possible to obtain a semiconductor optical integrated device that can be easily manufactured and can suppress a decrease in light transmittance.

Other Embodiments The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit of the present invention. For example, the dimensions and carrier concentrations shown in the above embodiment are merely examples, and it is needless to say that appropriate dimensions and concentrations should be adopted according to crystal growth conditions, element structures, and the like.

The dielectric used for the mask is not limited to SiO ₂ , and other dielectrics such as silicon nitride or silicon oxynitride can be used.

  The layer structure in the semiconductor MZ optical modulator is not limited to the pin structure, and may be an npin structure, for example.

  The substrate is not limited to a conductive substrate, and a high resistance substrate may be used.

  The composition of the core layer is not limited to AlGaInAs, and other semiconductor mixed crystals such as InGaAsP and InGaAs may be used. The active layer is not limited to InGaAsP, and other semiconductor mixed crystals such as AlGaInAs and InGaAs may be used. The structure of the core layer or the active layer is not limited to the quantum well structure, and may be another structure such as a bulk structure.

  Needless to say, the functional region integrated with the semiconductor MZ optical modulator is not limited to the DFB laser. Furthermore, one or more functional regions may be integrated with the semiconductor MZ optical modulator.

1a, 1b Optical waveguide 2a MMI demultiplexer 2b MMI multiplexer 3 Incident side waveguide 4 Emission side waveguide 11 Substrate 12 Buffer layer 13 Core layer 14 Etching stop layer 15 Upper cladding layer 16 Mask 21 Substrate 22 Core layer 23 Etching Stop layer 24 Clad layer 25 Diffraction grating 26 Active layer 27 Clad layer 28 Upper clad layer 29 Mask 31 Substrate 32 Clad layer 33 Core layer 34 Clad layer 35 Clad layer 36 Cap layer 37 Dielectric mask 38 Separation groove 201 Semiconductor MZ optical modulator Region 202 DFB laser region 203, 204 Optical waveguide

Claims (10)

A semiconductor substrate;
A semiconductor laminate including a core layer and a clad layer laminated on the semiconductor substrate;
Formed on the semiconductor laminate,
A demultiplexer for demultiplexing incident light incident from the outside;
First and second optical waveguides provided with phase modulation regions for modulating the phase of light emitted from the duplexer;
A multiplexer that multiplexes the light emitted from the first and second optical waveguides, and
The first and second optical waveguides are separated by a separation groove having a predetermined length between the phase modulation region and the duplexer and between the phase modulation region and the multiplexer. And a semiconductor Mach-Zehnder optical modulator whose width continuously decreases toward the separation groove. The semiconductor substrate is made of InP,
The semiconductor Mach-Zehnder optical modulator according to claim 1. The core layer is made of a semiconductor mixed crystal containing Al,
The semiconductor Mach-Zehnder optical modulator according to claim 1 or 2. The core layer is made of AlGaInAs or AlInAs,
The semiconductor Mach-Zehnder optical modulator according to claim 3. The core layer has a quantum well structure,
The semiconductor Mach-Zehnder optical modulator according to any one of claims 1 to 4. The clad layer is made of InP,
The semiconductor Mach-Zehnder optical modulator according to any one of claims 1 to 5. The semiconductor Mach-Zehnder optical modulator according to any one of claims 1 to 6,
A semiconductor laser monolithically integrated with the semiconductor Mach-Zehnder optical modulator on the semiconductor substrate,
The semiconductor laser is
A diffraction grating formed on the semiconductor substrate;
An active layer laminated on the diffraction grating;
A semiconductor optical integrated device comprising at least the clad layer shared with the semiconductor Mach-Zehnder optical modulator stacked on the active layer. The core layer and the active layer are butt joint joined,
The semiconductor optical integrated device according to claim 7. Forming a semiconductor laminate by laminating a core layer and a clad layer on a semiconductor substrate;
A demultiplexer for demultiplexing incident light incident from the outside;
First and second optical waveguides provided with phase modulation regions for modulating the phase of light emitted from the duplexer;
A step of forming on the semiconductor stack a multiplexer that multiplexes light emitted from the first and second optical waveguides,
The first and second optical waveguides are separated by a separation groove having a predetermined length between the phase modulation region and the duplexer and between the phase modulation region and the multiplexer. And a method of manufacturing a semiconductor Mach-Zehnder optical modulator whose width continuously decreases toward the separation groove. Forming a diffraction grating in a region for forming a semiconductor laser on a semiconductor substrate;
Laminating an active layer on the semiconductor substrate and on the diffraction grating;
Etching and removing the active layer in a region for forming a semiconductor Mach-Zehnder optical modulator;
Stacking a core layer by butt-joining the active layer to a region where the semiconductor Mach-Zehnder optical modulator is formed on the semiconductor substrate;
Laminating a cladding layer on the active layer and the core layer;
A demultiplexer for demultiplexing incident light incident from the outside;
First and second optical waveguides provided with phase modulation regions for modulating the phase of light emitted from the duplexer;
And a step of forming a multiplexer for multiplexing the light emitted from the first and second optical waveguides in a region where the semiconductor Mach-Zehnder optical modulator is formed on the cladding layer,
The first and second optical waveguides are separated by a separation groove having a predetermined length between the phase modulation region and the duplexer and between the phase modulation region and the multiplexer. And a method for manufacturing a semiconductor optical integrated device, the width of which is continuously reduced toward the separation groove.

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