JP5246843B2 - Substrate processing apparatus, baking method, and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a baking method, and more particularly to a technique for forming a desired film on a product substrate while monitoring a processing state of the product substrate with a monitor substrate.

In this type of technology, in addition to the product substrate and the monitor substrate, a dummy substrate may be simultaneously accommodated in the processing chamber and used for processing under substantially the same conditions as the product substrate. When the substrate processing apparatus is a vertical type, the product substrate is usually arranged at a substantially central portion in the vertical direction, and the dummy substrates are arranged vertically so as to sandwich the product substrate. The monitor substrate is disposed at a position between the product substrate and the dummy substrate, and at least one of the monitor substrates is disposed at a position adjacent to the dummy substrate. When actually forming a desired film on the product substrate, for example, a raw material gas such as halide Si or H ₂ O and a catalyst are supplied to the processing chamber to form the desired film on the product substrate.

However, when such a film forming process is repeated, a film is also formed on the dummy substrate. When the film thickness reaches a certain thickness, H ₂ O is degassed from the dummy substrate, and the H ₂ O May be mixed with halides and catalysts mainly at the outer edge of the substrate to cause a CVD reaction. At this time, in the monitor substrate adjacent to the dummy substrate from which H ₂ O has been degassed, a film is locally formed on the outer edge portion (a film is formed so as to exhibit a mortar shape when the cross section is viewed from the side), and the monitor substrate is formed. The film thickness becomes non-uniform in the same plane of the substrate, and the in-plane uniformity of the film thickness of the monitor substrate is lowered. If the film thickness of the monitor substrate becomes non-uniform, it becomes impossible to accurately monitor the processing state of the product substrate. To correct this, it is necessary to frequently replace the dummy substrate.

  Accordingly, a main object of the present invention is to provide a substrate processing apparatus and a baking method capable of accurately monitoring the processing state of a product substrate and suppressing the replacement frequency of dummy substrates.

According to one aspect of the invention,
A product substrate, a monitor substrate, and a dummy substrate are accommodated in a processing chamber, and a desired film is formed on the surface of each substrate while heating each substrate with at least one monitor substrate adjacent to the dummy substrate. A substrate processing apparatus,
Each time the desired film is formed a predetermined number of times, the dummy substrate is baked in a state in which the dummy substrate is accommodated in the processing chamber and at least a heating condition is different from that when the desired film is formed. A first substrate processing apparatus is provided.

Preferably, in the first substrate processing apparatus,
A heating unit for heating each of the substrates;
A raw material supply system for supplying at least one raw material gas for forming a desired film on the surface of each substrate into the processing chamber;
A control unit that controls at least the heating unit and the raw material supply system;
Have
The controller is
When the desired film is formed, the heating unit is controlled to heat each substrate at a temperature lower than the vaporization temperature of the source gas, and when the dummy substrate is baked, the vaporization temperature of the source gas. The heating unit is controlled to heat the dummy substrate at a higher temperature.

According to another aspect of the invention,
A processing chamber for storing a product substrate, a monitor substrate, and a dummy substrate in a stacked state in a vertical direction with a predetermined interval;
A heating unit for heating each of the substrates;
A control unit for controlling at least the heating unit;
A substrate processing apparatus for forming a desired film on the surface of each substrate,
The controller is
A counter for counting the number of times of film formation on each substrate;
A storage unit for storing the number of times of film formation on each of the substrates;
A comparison unit that compares the number of times of film formation on each substrate with a predetermined threshold number of times;
A baking execution unit that executes a process of baking the dummy substrate in a processing chamber when the number of times of film formation on each substrate reaches the threshold number;
A second substrate processing apparatus is provided.

According to another aspect of the invention,
A processing chamber for storing a product substrate, a monitor substrate, and a dummy substrate in a stacked state in a vertical direction with a predetermined interval;
A first raw material supply system for supplying halide Si into the processing chamber as a first raw material gas;
A second raw material supply system for supplying H ₂ O as a second raw material gas into the processing chamber;
A catalyst supply system for supplying a catalyst having a decomposition temperature equal to or higher than a vaporization temperature of the second source gas into the processing chamber;
A heating unit for heating each of the substrates;
A controller that controls at least the first raw material supply system, the second raw material supply system, the catalyst supply system, and the heating unit;
Have
A substrate processing apparatus for alternately supplying the first source gas and the catalyst and the second source gas and the catalyst to form a desired film on the surface of each substrate;
In the laminate composed of the product substrate, the monitor substrate, and the dummy substrate, the dummy substrate is disposed on an upper portion and a lower portion of the laminate, and at least one of the monitor substrates is adjacent to the dummy substrate. Placed in a matching position,
Each time the desired film is formed a predetermined number of times, the dummy substrate is baked while being accommodated in the processing chamber,
When forming the desired film, each substrate is heated at a temperature lower than the vaporization temperature of the second source gas, and when baking the dummy substrate, at least the vaporization temperature of the second source gas. A third substrate processing apparatus is provided, wherein the dummy substrate is heated at a higher temperature.

According to another aspect of the invention,
A product substrate, a monitor substrate, and a dummy substrate are accommodated in the processing chamber, and a desired source gas is supplied into the processing chamber while heating each substrate in a state where at least one monitor substrate is adjacent to the dummy substrate. And a method of baking at least the dummy substrate using a substrate processing apparatus for forming a desired film on the surface of each substrate,
Baking process for baking the dummy substrate each time the desired film is formed a predetermined number of times, with the dummy substrate being accommodated in a processing chamber, with at least a heating condition different from that for forming the desired film. A baking method is provided.

According to the first substrate processing apparatus of one aspect of the present invention, since a dummy wafer is baked every time a desired film is formed on each substrate a predetermined number of times, a monitor wafer is formed from the films cumulatively formed on the dummy wafer. A substance (for example, H ₂ O) that affects the film thickness of the film can be evaporated, and the amount of the substance degassed from the dummy wafer when the film is formed on the product wafer can be reduced. For this reason, the in-plane uniformity of the film thickness is suppressed from decreasing between adjacent monitor wafers, the processing status of the product wafer can be accurately monitored, and the dummy wafer replacement frequency can also be suppressed.

According to the second substrate processing apparatus of another aspect of the present invention, since the baking execution unit is provided and the dummy wafer can be baked, the monitoring is performed from the film cumulatively formed on the dummy wafer. A substance (for example, H ₂ O) that affects the film thickness of the wafer can be evaporated, and the amount of the substance degassed from the dummy wafer when the film is formed on the product wafer can be reduced. For this reason, it is possible to suppress the in-plane uniformity of the film thickness from being lowered on the monitor wafer adjacent thereto, and to accurately monitor the processing state such as the film thickness of the product wafer, and also to suppress the replacement frequency of the dummy wafer. be able to.

According to the third substrate processing apparatus of another aspect of the present invention, since a dummy wafer is baked every time a desired film is formed on each substrate a predetermined number of times, monitoring is performed from the film formed cumulatively on the dummy wafer. A substance (for example, H ₂ O) that affects the film thickness of the wafer can be evaporated, and the amount of the substance degassed from the dummy wafer when the film is formed on the product wafer can be reduced. For this reason, the in-plane uniformity of the film thickness is suppressed from decreasing between adjacent monitor wafers, the processing status of the product wafer can be accurately monitored, and the dummy wafer replacement frequency can also be suppressed.

According to the baking method according to another aspect of the present invention, since the dummy wafer is baked every time a desired film is formed on each substrate a predetermined number of times, the film thickness of the monitor wafer is selected from the films formed cumulatively on the dummy wafer. A substance (for example, H ₂ O) that affects the temperature can be evaporated, and the amount of the substance degassed from the dummy wafer when a film is formed on the product wafer can be reduced. For this reason, the in-plane uniformity of the film thickness is suppressed from decreasing between adjacent monitor wafers, the processing status of the product wafer can be accurately monitored, and the dummy wafer replacement frequency can also be suppressed.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
The substrate processing apparatus according to the present embodiment is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device (IC (Integrated Circuits)).
In the following description, as an example of the substrate processing apparatus, a case will be described in which a vertical apparatus that performs a film forming process or the like on a substrate is used.

  As shown in FIG. 1, in the substrate processing apparatus 101, a cassette 110 containing a wafer 200 as an example of a substrate is used, and the wafer 200 is made of a material such as silicon. The substrate processing apparatus 101 includes a housing 111, and a cassette stage 114 is installed inside the housing 111. The cassette 110 is carried on the cassette stage 114 by an in-process transfer device (not shown) or unloaded from the cassette stage 114.

  The cassette stage 114 is placed by the in-process transfer device so that the wafer 200 in the cassette 110 maintains a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward. The cassette stage 114 rotates the cassette 110 clockwise 90 degrees rearward of the casing 111 so that the wafer 200 in the cassette 110 is in a horizontal posture, and the wafer loading / unloading port of the cassette 110 faces the rear of the casing 111. It is configured to be operable.

  A cassette shelf 105 is installed in a substantially central portion of the casing 111 in the front-rear direction, and the cassette shelf 105 is configured to store a plurality of cassettes 110 in a plurality of rows and a plurality of rows. The cassette shelf 105 is provided with a transfer shelf 123 in which the cassette 110 to be transferred by the wafer transfer mechanism 125 is stored.

  A reserve cassette shelf 107 is provided above the cassette stage 114, and is configured to store the cassette 110 in a preliminary manner.

  A cassette carrying device 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette carrying device 118 includes a cassette elevator 118a that can move up and down while holding the cassette 110, and a cassette carrying mechanism 118b as a carrying mechanism. The cassette carrying device 118 is configured to carry the cassette 110 among the cassette stage 114, the cassette shelf 105, and the spare cassette shelf 107 by continuous operation of the cassette elevator 118a and the cassette carrying mechanism 118b.

  A wafer transfer mechanism 125 is installed behind the cassette shelf 105. The wafer transfer mechanism 125 includes a wafer transfer device 125a that can rotate or linearly move the wafer 200 in the horizontal direction, and a wafer transfer device elevator 125b that moves the wafer transfer device 125a up and down. The wafer transfer device 125 a is provided with a tweezer 125 c for picking up the wafer 200. The wafer transfer device 125 loads (charges) the wafer 200 to the boat 217 by using the tweezers 125c as a placement portion of the wafer 200 by continuous operation of the wafer transfer device 125a and the wafer transfer device elevator 125b. The boat 217 is configured to be detached (discharged).

  A processing furnace 202 for heat-treating the wafer 200 is provided above the rear portion of the casing 111, and a lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port shutter 147.

  Below the processing furnace 202, a boat elevator 115 that raises and lowers the boat 217 with respect to the processing furnace 202 is provided. An arm 128 is connected to the lifting platform of the boat elevator 115, and a seal cap 219 is horizontally installed on the arm 128. The seal cap 219 is configured to support the boat 217 vertically and to close the lower end portion of the processing furnace 202.

  The boat 217 includes a plurality of holding members, and is configured to hold a plurality of (for example, about 50 to 150) wafers 200 horizontally with the centers thereof aligned in the vertical direction. Yes.

  Above the cassette shelf 105, a clean unit 134a for supplying clean air that is a cleaned atmosphere is installed. The clean unit 134a includes a supply fan and a dustproof filter, and is configured to distribute clean air inside the casing 111.

  A clean unit 134 b that supplies clean air is installed at the left end of the housing 111. The clean unit 134b also includes a supply fan and a dustproof filter, and is configured to distribute clean air in the vicinity of the wafer transfer device 125a, the boat 217, and the like. The clean air is exhausted to the outside of the casing 111 after circulating in the vicinity of the wafer transfer device 125a, the boat 217, and the like.

  Next, main operations of the substrate processing apparatus 101 will be described.

  When the cassette 110 is loaded onto the cassette stage 114 by an in-process transfer device (not shown), the cassette 110 holds the wafer 200 in a vertical position on the cassette stage 114 and the wafer loading / unloading port of the cassette 110 is directed upward. It is placed so that it faces. Thereafter, the cassette 110 is placed in a clockwise direction 90 in the clockwise direction behind the housing 111 so that the wafer 200 in the cassette 110 is placed in a horizontal posture by the cassette stage 114 and the wafer loading / unloading port of the cassette 110 faces the rear of the housing 111. ° Rotated.

  Thereafter, the cassette 110 is automatically transported and delivered by the cassette transport device 118 to the designated shelf position of the cassette shelf 105 or the spare cassette shelf 107 and temporarily stored, and then the cassette shelf 105 or the spare cassette shelf. It is transferred from 107 to the transfer shelf 123 by the cassette transfer device 118 or directly transferred to the transfer shelf 123.

  When the cassette 110 is transferred to the transfer shelf 123, the wafer 200 is picked up from the cassette 110 by the tweezer 125c of the wafer transfer device 125a through the wafer loading / unloading port and loaded (charged) into the boat 217. The wafer transfer device 125 a that has delivered the wafer 200 to the boat 217 returns to the cassette 110 and loads the subsequent wafer 110 into the boat 217.

  When a predetermined number of wafers 200 are loaded into the boat 217, the furnace port shutter 147 that has closed the lower end of the processing furnace 202 is opened, and the lower end of the processing furnace 202 is opened. Thereafter, the boat 217 holding the wafer group 200 is loaded into the processing furnace 202 by the ascending operation of the boat elevator 115, and the lower part of the processing furnace 202 is closed by the seal cap 219.

  After loading, arbitrary processing is performed on the wafer 200 in the processing furnace 202. After the processing, the wafer 200 and the cassette 110 are carried out of the casing 111 in the reverse procedure described above.

  As shown in FIGS. 2 and 3, the processing furnace 202 is provided with a heater 207 for heating the wafer 200. The heater 207 includes a cylindrical heat insulating member whose upper portion is closed and a plurality of heater wires, and has a unit configuration in which the heater wires are provided on the heat insulating member. A quartz reaction tube 203 for processing the wafer 200 is provided inside the heater 207.

  A manifold 209 made of stainless steel or the like is provided at the lower end of the reaction tube 203 via an O-ring 220 that is an airtight member. The lower end opening of the manifold 209 is airtightly closed by a seal cap 219 as a lid through an O-ring 220. In the processing furnace 202, a processing chamber 201 is formed by at least the reaction tube 203, the manifold 209, and the seal cap 219.

  The seal cap 219 is provided with a boat support 218 that supports the boat 217. As shown in FIG. 1, the boat 217 includes a bottom plate 210 fixed to the boat support base 218 and a top plate 211 disposed above the bottom plate 210, and a plurality of support columns are disposed between the bottom plate 210 and the top plate 211. 212 has a construction in which it is constructed. A plurality of wafers 200 are held on the boat 217. The plurality of wafers 200 are supported by the support columns 212 of the boat 217 in a state in which the wafers 200 are held in a horizontal posture with a certain interval therebetween.

  In this embodiment, the plurality of wafers 200 supported and held by the boat 217 are classified as follows according to each function (role). Specifically, as shown in FIG. 4, the plurality of wafers 200 are classified into product wafers 200a, monitor wafers 200b to 200e, and dummy wafers 200f and 200g.

  The product wafer 200a is a predetermined number of wafers 200 arranged at a substantially central portion of the boat 217, and is a wafer 200 to be shipped as a product after the film forming process.

  The monitor wafers 200b and 200c are wafers 200 arranged above the product wafer 200a, and the processing status of the product wafer 200a (the generation status of particles in the upper part of the processing chamber 201, the film thickness of the product wafer 200a, etc.). A wafer 200 for monitoring. In particular, the monitor wafer 200b is disposed immediately below the dummy wafer 200f and adjacent to the dummy wafer 200f.

  The monitor wafers 200d and e are wafers 200 disposed below the product wafer 200a. Similarly to the monitor wafers 200b and 200c, the monitor wafers 200d and e are processed in the product wafer 200a (the generation state of particles in the lower part of the processing chamber 201, This is a wafer 200 for monitoring the film thickness etc. of the product wafer 200a. In particular, the monitor wafer 200e is arranged at a position immediately above the dummy wafer 200g and adjacent to the dummy wafer 200g.

  In this embodiment, two monitor wafers 200b to 200e are arranged above and below the product wafer 200a, respectively, but the number of monitor wafers 200b to 200e can be changed as appropriate.

  The dummy wafer 200f is a predetermined number of wafers 200 disposed above the product wafer 200a and the monitor wafers 200b and 200c, and is a dummy wafer 200 with respect to the product wafer 200a.

  The dummy wafer 200g is a predetermined number of wafers 200 disposed below the product wafer 200a and the monitor wafers 200d and 200e. Like the dummy wafer 200f, the dummy wafer 200g is a dummy wafer 200 with respect to the product wafer 200a.

  In the present embodiment, the dummy wafers 200f and 200g reduce the temperature non-uniformity in the monitor wafers 200b and 200e adjacent to the dummy wafers 200b and the product wafer 200a, and the interval between the product wafers 200a to be formed. Is used for the purpose of adjusting (the pitch of the product wafer 200a is the same in every part).

  In the processing furnace 202 described above, in a state where a plurality of wafers 200 to be batch-processed are stacked on the boat 217 in multiple stages, the boat 217 is inserted into the processing chamber 201 while being supported by the boat support 218, and the heater 207 is The wafer 200 inserted into the processing chamber 201 is heated to a predetermined temperature.

  As shown in FIGS. 2 and 3, two source gas supply pipes 310 and 320 for supplying a source gas and a catalyst supply pipe 330 for supplying a catalyst are connected to the processing chamber 201. .

  The source gas supply pipe 310 is provided with a mass flow controller 312 and a valve 314. A nozzle 410 is connected to the tip of the source gas supply pipe 310. The nozzle 410 is an arc-shaped space between the inner wall of the reaction tube 203 constituting the processing chamber 201 and the wafer 200, and extends in the vertical direction along the inner wall of the reaction tube 203. A large number of gas supply holes 410 a for supplying a source gas are provided on the side surface of the nozzle 410. The gas supply holes 410a have the same opening area from the lower part to the upper part, and are provided at the same opening pitch.

  Further, a carrier gas supply pipe 510 for supplying a carrier gas is connected to the source gas supply pipe 310. The carrier gas supply pipe 510 is provided with a mass flow controller 512 and a valve 514.

  The source gas supply pipe 320 is provided with a mass flow controller 322 and a valve 324. A nozzle 420 is connected to the tip of the source gas supply pipe 320. Similarly to the nozzle 410, the nozzle 420 is an arc-shaped space between the inner wall of the reaction tube 203 constituting the processing chamber 201 and the wafer 200, and extends in the vertical direction along the inner wall of the reaction tube 203. ing. A large number of gas supply holes 420 a for supplying a source gas are provided on the side surface of the nozzle 420. Similarly to the gas supply holes 410a, the gas supply holes 420a have the same opening area from the lower part to the upper part, and are provided at the same opening pitch.

  Further, a carrier gas supply pipe 520 for supplying a carrier gas is connected to the source gas supply pipe 320. The carrier gas supply pipe 520 is provided with a mass flow controller 522 and a valve 524.

  The catalyst supply pipe 330 is provided with a mass flow controller 332 and a valve 334. A nozzle 430 is connected to the tip of the catalyst supply pipe 330. Similarly to the nozzle 410, the nozzle 430 is an arc-shaped space between the inner wall of the reaction tube 203 constituting the processing chamber 201 and the wafer 200, and extends in the vertical direction along the inner wall of the reaction tube 203. ing. A large number of catalyst supply holes 430 a for supplying a catalyst are provided on the side surface of the nozzle 430. Similarly to the gas supply holes 410a, the catalyst supply holes 430a have the same opening area from the lower part to the upper part, and are provided at the same opening pitch.

  Further, a carrier gas supply pipe 530 for supplying a carrier gas is connected to the catalyst supply pipe 330. The carrier gas supply pipe 530 is provided with a mass flow controller 532 and a valve 534.

As an example of the above configuration, halide Si (hexachlorodisilane (Si ₂ Cl ₆ ), trichlorosilane (SiCl ₄ ), etc.) is introduced into the source gas supply pipe 310 as an example of the source gas. As an example of the source gas, H ₂ O, H ₂ O ₂ or the like is introduced into the source gas supply pipe 320. As an example of the catalyst, pyridine (C ₅ H ₅ N), pyrimidine, quinoline, or the like is introduced into the catalyst supply pipe 330. The decomposition temperature of the catalyst (the temperature at which the catalyst decomposes the source gas) is higher than the vaporization temperature of at least one of the source gases introduced into the source gas supply pipes 310 and 320. For example, when H ₂ O is used as the source gas, the decomposition temperature of the catalyst is higher than the vaporization temperature of H ₂ O (about 100 ° C.).

  An exhaust pipe 231 for exhausting the inside of the processing chamber 201 is connected to the processing chamber 201 via a valve 243e. A vacuum pump 246 is connected to the exhaust pipe 231, and the inside of the processing chamber 201 can be evacuated by the operation of the vacuum pump 246. The valve 243e can start and stop the vacuum evacuation of the processing chamber 201 by opening and closing operations, and can also adjust the valve opening degree and adjust the pressure inside the processing chamber 201. This is an open / close valve.

  A boat 217 is provided at the center in the reaction tube 203. The boat 217 can be moved up and down (in and out) with respect to the reaction tube 203 by the boat elevator 115. A boat rotation mechanism 267 that rotates the boat 217 is provided at the lower end of the boat support 218 that supports the boat 217 in order to improve processing uniformity. By driving the boat rotation mechanism 267, the boat 217 supported by the boat support 218 can be rotated.

  Each of the mass flow controllers 312, 322, 332, 512, 522, 532, valves 314, 324, 334, 514, 524, 534, valve 243e, heater 207, vacuum pump 246, boat rotating mechanism 267, boat elevator 115, etc. The member is connected to the controller 280. The controller 280 is an example of a control unit that controls the overall operation of the substrate processing apparatus 101.

  In this embodiment, as shown in FIG. 5, the controller 280 is mainly composed of a film forming execution unit 285, a baking execution unit 290, a counter 292, a storage unit 294, a comparison unit 296, etc., which are mutually connected by a bus. It has a connected configuration.

  In the film forming process to be described later, the film forming execution unit 285 executes each processing program in the baking process, and the baking execution unit 290 executes the respective processing programs to adjust the flow rates of the mass flow controllers 312, 322, 332, 512, 522, and 532, and the valves 314, 324. 334, 514, 524, 534 opening / closing operation, valve 243e opening / closing operation and pressure adjustment operation, heater 207 temperature adjustment, vacuum pump 246 activation / deactivation, boat rotation mechanism 267 rotation speed adjustment, boat elevator 115 elevation operation, etc. Each is controlled.

  In this case, the number of film forming processes executed by the film forming execution unit 285 is counted by the counter 292, and the counted number of film forming processes is stored in the storage unit 294. The stored number of film formation processes is compared with a predetermined threshold number by the comparison unit 296, and when the number of film formation processes reaches the threshold number, that fact is transmitted from the comparison unit 296 to the baking execution unit 290, and baking execution is performed. The unit 290 is configured to execute a baking process (see later).

Next, an example of a film forming process using the ALD method and an example of forming a SiO ₂ film which is one of the manufacturing steps of a semiconductor device (semiconductor device) and an example of a baking process performed thereafter will be described. To do.

  The ALD (Atomic Layer Deposition) method is one of the CVD (Chemical Vapor Deposition) methods, and is a raw material gas that becomes at least two types of raw materials used for film formation under certain film formation conditions (temperature, time, etc.). Are alternately supplied onto the substrate one by one, adsorbed onto the substrate in units of one atom, and a film is formed using a surface reaction. At this time, the film thickness is controlled by the number of cycles in which the source gas is supplied (for example, if the film forming speed is 1 kg / cycle, 20 cycles are performed when a 20 mm film is formed).

In this example, a case where halides Si and H ₂ O are used as source gases, pyridine is used as a catalyst, and N ₂ is used as a carrier gas will be described.

  First, the “film formation process” will be described.

In the film forming process, the film forming execution unit 285 of the controller 240 executes a processing program and controls the substrate processing apparatus 101 as follows. That is, the heater 207 is controlled to keep the inside of the processing chamber 201 at a temperature lower than the vaporization temperature of the source gas (mainly H ₂ O), for example, 75 ° C. Thereafter, a plurality of wafers 200 are loaded into the boat 217, and the boat 217 is loaded into the processing chamber 201. Thereafter, the boat 217 is rotated by the boat driving mechanism 267 to rotate the wafer 200. Thereafter, the vacuum pump 246 is operated and the valve 243e is opened to evacuate the inside of the processing chamber 201. When the temperature of the wafer 200 reaches 75 ° C. and the temperature is stabilized, the temperature in the processing chamber 201 is maintained at 75 ° C. In this state, the following four steps are sequentially executed.

(Step 1)
A state in which halide Si is introduced into the source gas supply pipe 310, H ₂ O is introduced into the source gas supply pipe 320, a catalyst is introduced into the catalyst supply pipe 330, and N ₂ is introduced (inflowed) into the carrier gas supply pipes 510, 520 and 530. Then, the valves 314, 334, 514, 524, 534 are opened.

As a result, the halide Si flows through the source gas supply pipe 310 while being mixed with N ₂ , flows out to the nozzle 410, and is supplied to the processing chamber 201 from the gas supply hole 410 a. At the same time, the catalyst also flows through the catalyst supply pipe 330 while being mixed with N ₂ , flows out to the nozzle 430, and is supplied to the processing chamber 201 from the catalyst supply hole 430 a. Further, N ₂ flows through the carrier gas supply pipe 520 and flows out to the nozzle 420, and is supplied to the processing chamber 201 through the gas supply hole 420a. The halide Si and catalyst supplied to the processing chamber 201 pass through the surface of the wafer 200 and are exhausted from the exhaust pipe 231.

  In step 1, the valves 314 and 334 are controlled to set the time for supplying the halide Si and the catalyst to an optimum time (for example, 10 seconds). At the same time, the valve 243e is appropriately adjusted to set the pressure in the processing chamber 201 to an optimum value within a certain range (for example, 3 Torr). In step 1 described above, Si is adsorbed onto the wafer 200 by supplying halide Si and a catalyst into the processing chamber 201 as shown in the first row in FIG.

(Step 2)
The valves 314 and 334 are closed to stop the supply of halide Si and catalyst, and N ₂ is continuously supplied from the carrier gas supply pipes 510, 520, and 530 to the processing chamber 201, and the inside of the processing chamber 201 is purged with N ₂ . . The purge time is 15 seconds, for example. As a result, as shown in the second stage in FIG. 6, the halide Si and catalyst remaining in the processing chamber 201 are removed from the processing chamber 201.

(Step 3)
The valves 324, 334 are opened while the valves 514, 524, 534 are open. As a result, H ₂ O flows through the source gas supply pipe 320 while being mixed with N ₂ , flows out to the nozzle 420, and is supplied to the processing chamber 201 from the gas supply hole 420 a. At the same time, the catalyst also flows through the catalyst supply pipe 330 while being mixed with N ₂ , flows out to the nozzle 430, and is supplied to the processing chamber 201 from the catalyst supply hole 430 a. Further, N ₂ flows through the carrier gas supply pipe 510 and flows out to the nozzle 410, and is supplied to the processing chamber 201 from the gas supply hole 410a. The H ₂ O and catalyst supplied to the processing chamber 201 pass through the surface of the wafer 200 and are exhausted from the exhaust pipe 231.

In Step 3, the valves 324 and 334 are controlled to set the time for supplying H ₂ O and the catalyst to an optimum time (for example, 20 seconds). At the same time, the valve 243e is appropriately adjusted so that the pressure in the processing chamber 201 becomes an optimum value within a certain range (for example, 7 Torr). In Step 3 described above, as shown in the third row in FIG. 6, the SiO ₂ film is formed on the wafer 200 by supplying H ₂ O and a catalyst into the processing chamber 201.

In addition, the characteristic required as the source gas supplied in Step 3 (a source corresponding to H ₂ O) is that the molecule contains atoms with high electronegativity and is electrically biased. . The reason is that since the catalyst has a high electronegativity, the activation energy of the raw material gas is lowered to promote the reaction. Therefore, as the source gas supplied in Step 3, H ₂ O, H ₂ O ₂ or the like having an OH bond is appropriate, and nonpolar molecules such as O ₂ or O ₃ are inappropriate.

(Step 4)
The valves 324 and 334 are closed to stop the supply of H ₂ O and the catalyst, and N ₂ is continuously supplied from the carrier gas supply pipes 510, 520 and 530 to the processing chamber 201, and the inside of the processing chamber 201 is purged with N ₂ . . The purge time is 15 seconds, for example. As a result, as shown in the fourth row in FIG. 6, H ₂ O and catalyst remaining in the processing chamber 201 are removed from the processing chamber 201.

Thereafter, steps 1 to 4 are set as one cycle, and this cycle is repeated a plurality of times to form a SiO ₂ film having a predetermined thickness on the wafer 200. In this case, it should be noted that in each cycle, as described above, the film formation is performed so that the halide Si, the catalyst, H ₂ O, and the catalyst are not mixed in the processing chamber 201.

Thereafter, the inside of the processing chamber 201 is evacuated to exhaust the halide Si, H ₂ O, and the catalyst remaining in the processing chamber 201, and the valve 243e is controlled to set the processing chamber 201 to the atmospheric pressure to process the boat 217. Unload from chamber 201. This completes one film formation process (batch process). Then, the processed product wafer 200a and the monitor wafers 200b to 200e are replaced with a new product wafer 200a and the monitor wafers 200b to 200e, and the process proceeds to the second film formation process.

Here, for example, if the thickness of the SiO ₂ film formed on the product wafer 200a is 500 mm, a 500 nm SiO ₂ film is deposited on the monitor wafers 200b to 200e and the dummy wafers 200f and 200g. The product wafer 200a and the monitor wafers 200b to 200e are used only once in one film forming process.

  However, since the dummy wafers 200f and 200g are repeatedly used through a plurality of film forming processes, the deposited film thickness increases as the film forming processes are repeated. When the film formation process is repeated, the monitor wafers 200b and 200e adjacent to the dummy wafers 200f and 200g, in particular, among the monitor wafers 200b to 200e, have non-uniform film thickness on the same surface and reduced in-plane uniformity. start.

It should be noted that among the monitor wafers 200b to 200e, it is the monitor wafers 200b and 200e adjacent to the dummy wafers 200f and 200g that reduce the in-plane uniformity of the film thickness due to the influence of H ₂ O. It is.
In order to verify this, the following experiment was performed to acquire data.

  In the experiment, first, as shown in FIG. 7, six monitor wafers are arranged at the top, center and bottom of the boat, respectively (see the solid line part), and a predetermined number of dummy wafers are arranged between them (see the dotted line part). ).

  The upper two monitor wafers are “Top (6), Top (5)”, the central two monitor wafers are “Cnt (4), Cnt (3)”, and the lower two monitor wafers. Was designated as “Bot (2), Bot (1)”. Then, the dummy wafers adjacent to the monitor wafers of Top (5), Cnt (3), and Bot (1) were replaced one by one with a clean wafer (a wafer on which no film was formed). As a result, the monitor wafers of Top (6), Cnt (4), and Bot (2) are each adjacent to the dummy wafer, and the monitor wafers of Top (5), Cnt (3), and Bot (1) are respectively used. The wafer was adjacent to a clean wafer (see Table 1).

  In this state, a film formation process was performed, and the in-plane uniformity (film thickness distribution) of the film thickness of each monitor wafer was examined. The result is shown in FIG. In each section of FIG. 8, the right side of the gray scale indicates that the film thickness is thick, and the left side indicates that the film thickness is thin. Further, in each section of FIG. 8, black lines are described in units of about 1 mm, and the smaller the black lines are, the better the in-plane uniformity is, and the more black lines are, the poorer the in-plane uniformity is. .

  As shown in FIG. 8, it can be seen that in any monitor wafer, the film thickness decreases toward the center and increases toward the outer edge. In particular, it can be seen that the tendency is remarkable in the monitor wafers of Top (6), Cnt (4), and Bot (2) adjacent to the dummy wafer.

Further, in the plane of each monitor wafer, the value of the thickest part is max (Å), the value of the thin part is min (Å), and the average film thickness of each monitor wafer is Mean (Å). The in-plane uniformity Unif (%) is obtained by equation (1).
Unif = (max−min) / Mean × 100 (1)
Table 1 shows the results of calculating the in-plane uniformity of each monitor wafer using equation (1).

  From Table 1, the in-plane uniformity Unif of Top (6), Cnt (4), and Bot (2) adjacent to the dummy wafer is 7.32 to 7.93%, while adjacent to the clean wafer. The in-plane uniformity Unif of each monitor wafer of Top (5), Cnt (3), and Bot (1) should be 3% or less (within ± 1.5%) at any of the upper, middle and lower positions. I understand.

From these results, it can be seen that only the monitor wafer adjacent to the dummy wafer is affected by the H ₂ O gas out of the accumulated film of the dummy wafer, which corresponds to the monitor wafers 200b and 200e in this embodiment. .

  Next, the relationship between the dummy wafers 200f and 200g and the adjacent monitor wafers 200b and 200e will be examined.

  FIG. 9 is a drawing schematically showing the relationship between the accumulated film thickness of the dummy wafers 200f and 200g and the in-plane uniformity of the monitor wafers 200b and 200e. In FIG. 7, the horizontal axis represents the accumulated film thickness of the dummy wafers 200f and 200g, and the vertical axis represents the in-plane uniformity of the monitor wafers 200b and 200e.

  As shown in FIG. 9, it can be seen that the in-plane uniformity of the film thickness of the monitor wafers 200b and 200e decreases from the time when the accumulated film thickness of the dummy wafers 200f and 200g reaches 2000 mm. The in-plane uniformity of the film thickness of the monitor wafers 200b and 200c decreases because the film thickness increases in the peripheral portions (side edge portions) of the monitor wafers 200b and 200c, and when viewed in cross-section, the overall shape is a mortar. This is because of the tendency to exhibit (see FIG. 11 described later).

As the accumulated film thickness of the dummy wafers 200f and 200g is increased, it is considered that the substance released from the film affects the film formation, and there are two ways of thinking. In this embodiment, since halides Si and H ₂ O are used as source gases, halogen substances (Cl) and H ₂ O are assumed as emission materials.

If the released substance is, for example, a halogen substance, a CVD reaction occurs when H ₂ O and the catalyst are supplied in Step 3, and the in-plane uniformity of the film thickness of the monitor wafers 200b and 200e is lowered. On the other hand, if the released substance is H ₂ O, a CVD reaction occurs when supplying the halide Si and the catalyst in Step 1, and the in-plane uniformity of the film thickness of the monitor wafers 200b and 200e is lowered.

  In order to specify the emitted substance, TDS (temperature-programmed desorption separation method) analysis was performed on the dummy wafers 200f and 200g having a cumulative film thickness of 2000 mm. The result is shown in FIG.

From the TDS analysis results, mass (molecular weight) 18 H ₂ O, mass 17 OH, mass 16 O are detected as substances released from the films of the dummy wafers 200f and 200g. It is thought that. Also. It is considered that almost no Cl having a mass of 35 is detected, and almost no halogen substance is released.

FIG. 11 shows an image model in which the in-plane uniformity of the film thickness of the monitor wafers 200b and 200e decreases due to the release of water (mainly H ₂ O) from the dummy wafers 200f and 200g. The model will be described in order with reference (in FIG. 11, the dummy wafer 200f disposed at the bottom of the dummy wafer 200f and the monitor wafer 200b adjacent thereto are typically modeled).

First, H ₂ O and the catalyst are exhausted in the N ₂ purge in Step 4 after the supply of H ₂ O and the catalyst. At this time, H ₂ O is also degassed from the accumulated film of the dummy wafer 200f. Precisely, H ₂ O is degassed from the accumulated film deposited on both the dummy wafer 200f and the inner wall of the reaction tube 203, but the area of the accumulated film is overwhelmingly larger in the dummy wafer 200f, and therefore depends on the accumulated film of the dummy wafer 200f. The impact is considered to contribute more.

  The degassing is present more in the gap between the wafer 200 and the inner wall of the reaction tube 203 than is present between the dummy wafer 200f and the monitor wafer 200b. This is because the gap between the wafer 200 and the reaction tube 203 (for example, about 30 mm) is overwhelmingly wider than the gap (for example, about 6.3 mm) between the wafers 200 in the design of the apparatus (in FIG. 11). (See the first row).

Next, in step 1, the halide Si and the catalyst are supplied. At this time, since H ₂ O released from the accumulated film of the dummy wafer 200f is also present, the halogen substance, H ₂ O, and the catalyst are mixed with each other. (See the second row in FIG. 11). This mixed state occurs in the peripheral portion (side edge portion) of the monitor wafer 200b. In this mixed state, the film formation rate is fast, and a film is rapidly deposited on the side edge of the monitor wafer 200b. When the monitor wafer 200b is viewed from the side, a thick bowl shape is formed on the side edge (FIG. 11). (Refer to the middle third row).

  From the above, for example, it is conceivable to manage the accumulated film thickness of the dummy wafers 200f and 200g and to replace the dummy wafers 200f and 200g before the film thickness exceeds 2000 mm. In this case, about 125 dummy wafers 200f and 200g are required at the maximum, and if the dummy wafers 200f and 200g are replaced every time the accumulated film thickness reaches 2000 mm, it is necessary to replace the dummy wafers 200f and 200g frequently. high). If the standard film formation (film thickness in one film formation process) is 400 mm, the dummy wafers 200f and 200g must be replaced every 5 Runs (every 5 film formation processes are performed), and the frequency is about 2 Every day.

  Therefore, in this embodiment, the following operation is performed in order to improve the in-plane uniformity of the film thicknesses of the monitor wafers 200b and 200e adjacent to the dummy wafers 200f and 200g while suppressing the replacement frequency of the dummy wafers 200f and 200g.

  That is, each time the film formation process is repeated, the counter 292 counts the number of film formation processes (the number of film formation processes executed by the film formation execution unit 285), and the counted number of film formation processes is stored in the storage unit 294. Is stored. The stored number of film forming processes is compared with a predetermined threshold number by the comparison unit 296.

  The “threshold number” is set in advance in the comparison unit 296. In this embodiment, the number of times the unbaked film thickness (accumulated film thickness that has not been baked) of the dummy wafers 200f and 200g reaches 2000 mm. Has been. For example, if an accumulated film having a thickness of 400 mm is formed in one film forming process, the threshold number is reached when the number of film forming processes reaches five.

Then, when the number of film forming processes reaches the threshold number, and when it is estimated that about 2000 mm of SiO ₂ film is formed on the dummy wafer 200, the comparison unit 296 transmits the fact to the baking execution unit 290. The baking execution unit 290 executes a baking process.

In the baking process, the baking execution unit 290 of the controller 240 executes a processing program and controls the substrate processing apparatus 101 as follows. That is, the boat 217 is loaded into the processing chamber 201 while the dummy wafers 200f and 200g are loaded in a state where the valve 243e is controlled to set the inside of the processing chamber 201 to atmospheric pressure, and then the dummy wafers 200f and 200g are baked (heated). . The reason for baking is to reduce H ₂ O emitted from the accumulated film on the dummy wafers 200f and 200g.

In the baking process, at least the heating conditions (heating temperature and the like) are set to conditions different from those during the film forming process. Specifically, the baking temperature is set to a temperature (100 to 800 ° C.) higher than the vaporization temperature of H ₂ O, preferably 200 ° C., by controlling the heater 207.

In addition to the heating conditions, the baking pressure may be different from that during the film forming process. Specifically, the valve 243e is controlled to set the baking pressure to 0.5 to 760 Torr, preferably 0.5 Torr. . More preferably, the baking pressure is set as shown in Table 2 in relation to the pressure during the film forming process.
However, the baking pressure should be lower because it is easy to evaporate H ₂ O.

  Baking time is 30 minutes to 12 hours. In practice, if the baking process is performed for 2 hours, sufficient results can be obtained, and therefore the baking time is preferably 2 hours.

  After the baking process, the dummy wafers 200f and 200g that have been subjected to the baking process can be used as they are together with the new product wafer 200a and the monitor wafers 200b to 200e.

When the baking process is executed, H ₂ O contained in the accumulated films of the dummy wafers 200f and 200g evaporates, so that H ₂ O is accumulated in the accumulated films (accumulated film thickness of the dummy wafers 200f and 200g). Until ˜2000 cm), baking is not necessary. Although it is assumed that H ₂ O is released even at a film thickness of 2000 mm or less, the amount of H ₂ O released increases by 2000 mm or more due to an increase in the volume of the accumulated film (deposition film). When the thickness is increased, it is considered that the in-plane uniformity of the film thickness of the monitor wafers 200b and 200e is affected (see FIG. 9).

  In the present embodiment, the dummy wafers 200f and 200g subjected to the baking process can continue to be used until the accumulated film thickness (total film thickness including the film thickness after the baking process) reaches about 40,000 mm. Further, the dummy wafers 200f and 200g after the baking process can be used again for the film forming process without cleaning.

  Based on the above, for reference, the results of TDS analysis performed on the dummy wafers 200f and 200g after performing the (vacuum) baking process under certain conditions (baking temperature: 200 ° C., baking time: 2 hours). It is shown in FIG. 12 (in FIG. 12, data for non-performing baking is also shown for comparison).

As shown in FIG. 12, it was found that H ₂ O released from the accumulated film can be reduced by baking the dummy wafers 200f and 200g at 200 ° C.

  Subsequently, when the accumulated film thickness of the dummy wafers 200f and 200g reaches 2000 mm, the result of performing the baking process on the dummy wafers 200f and 200g and then performing the film formation using the same dummy wafers 200f and 200g is shown in FIG.

  From the result of FIG. 13, by performing the baking process on the dummy wafers 200f and 200g, the in-plane uniformity of the film thickness of the monitor wafers 200b and 200e is about ± 1.5% without replacing the dummy wafers 200f and 200g. I was able to maintain it. In obtaining the result of FIG. 13, since the temperature during the film formation process is 75 ° C., the temperature increase process from the film formation process to the baking process and the temperature decrease process from the baking process to the film formation process are not so much. The baking temperature was 200 ° C. as a time-consuming temperature. Of course, the same effect can be obtained even at a temperature higher than 200 ° C., but time is required for the temperature raising step and the temperature lowering step.

As described above, according to a preferred embodiment of the present invention, every time a film forming process is performed by a predetermined number of batch processes (that is, every time a cumulative film of about 2000 mm is formed on the dummy wafers 200f and 200g), the dummy wafers 200f and 200g are used. since baking, dummy wafers 200f, 200 g cumulatively from the formed film can be evaporated of _{H 2} O, the reduced amount of the dummy wafer 200f, degassing from 200 g _{H 2} O during the film forming process can do.

  For this reason, the in-plane uniformity of the film thickness is suppressed from decreasing between the monitor wafers 200b and 200e adjacent thereto, the processing state of the product wafer 200a can be accurately monitored, and the dummy wafers 200f and 200g can be replaced. The frequency can be reduced. Further, the baking process of the dummy wafers 200f and 200g according to the present embodiment can be performed using the same processing furnace 202 as the film forming process, and it is not necessary to prepare a baking-dedicated furnace.

As mentioned above, although the preferable Example of this invention was described, according to the preferable embodiment of this invention,
A product substrate, a monitor substrate, and a dummy substrate are accommodated in a processing chamber, and a desired film is formed on the surface of each substrate while heating each substrate with at least one monitor substrate adjacent to the dummy substrate. A substrate processing apparatus,
Each time the desired film is formed a predetermined number of times, the dummy substrate is baked in a state where the dummy substrate is accommodated in the processing chamber and at least a heating condition is different from that when the desired film is formed. 1 substrate processing apparatus is provided.

Preferably, in the first substrate processing apparatus,
A heating unit for heating each of the substrates;
A raw material supply system for supplying at least one raw material gas for forming a desired film on the surface of each substrate into the processing chamber;
A control unit that controls at least the heating unit and the raw material supply system;
Have
The controller is
When the desired film is formed, the heating unit is controlled to heat each substrate at a temperature lower than the vaporization temperature of the source gas, and when the dummy substrate is baked, the vaporization temperature of the source gas. A second substrate processing apparatus is provided that controls the heating unit to heat the dummy substrate at a higher temperature.

  The “at least one source gas” is a reactive gas released from a dummy substrate when a desired film is continuously formed on the dummy substrate, and the characteristics of the monitor substrate adjacent to the dummy substrate ( Reactive gases that affect the film thickness etc. are included. In this case, particularly when the desired film is formed, the control unit controls the heating unit to heat the substrates at a temperature lower than the vaporization temperature of the reactive gas, and the dummy substrate is baked. When doing so, the heating unit is controlled so as to heat the dummy substrate at a temperature higher than the vaporization temperature of the reactive gas.

Preferably, in the second substrate processing apparatus,
A catalyst supply system for supplying the catalyst into the processing chamber;
The control unit controls the raw material supply system and the catalyst supply system so as to supply the catalyst simultaneously when supplying the raw material gas,
A third substrate processing apparatus is provided in which the decomposition temperature of the catalyst is higher than the vaporization temperature of the source gas.

Preferably, in the third substrate processing apparatus,
A fourth substrate processing apparatus is provided in which the catalyst is any one of pyridine, pyrimidine, and quinoline.

Preferably, in the second to fourth substrate processing apparatuses,
The raw material supply system is
A first raw material supply system for supplying halide Si into the processing chamber as a first raw material gas;
A fifth substrate processing apparatus is provided that includes a second source supply system that supplies either H ₂ O or H ₂ O ₂ as a second source gas into the processing chamber.

Preferably, in any one of the second to fifth substrate processing apparatuses,
The controller is
A sixth substrate processing apparatus is provided for controlling the heating unit so that the temperature of the dummy substrate becomes 200 ° C. when the dummy substrate is baked.

Preferably, in any one of the second to sixth substrate processing apparatuses,
A pressure adjusting device for adjusting the pressure in the processing chamber;
The controller is
There is provided a seventh substrate processing apparatus for controlling the pressure adjusting device so that a pressure when baking the dummy substrate is 0.5 to 3 Torr, which is a lower pressure than when forming the desired film. .

Preferably, in any one of the first to seventh substrate processing apparatuses,
The predetermined number of times provides an eighth substrate processing apparatus in which the unbaked accumulated film thickness reaches 2000 mm among the accumulated film thicknesses of the dummy substrate.

According to another preferred embodiment of the invention,
A processing chamber for storing a product substrate, a monitor substrate, and a dummy substrate in a stacked state in a vertical direction with a predetermined interval;
A heating unit for heating each of the substrates;
A control unit for controlling at least the heating unit;
A substrate processing apparatus for forming a desired film on the surface of each substrate,
The controller is
A counter for counting the number of times of film formation on each substrate;
A storage unit for storing the number of times of film formation on each of the substrates;
A comparison unit that compares the number of times of film formation on each substrate with a predetermined threshold number of times;
A baking execution unit that executes a process of baking the dummy substrate in a processing chamber when the number of times of film formation on each substrate reaches the threshold number;
A ninth substrate processing apparatus is provided.

Preferably, in the ninth substrate processing apparatus,
A source supply system for supplying at least one source gas for forming a desired film on the surface of each substrate into the processing chamber;
The controller is
When the desired film is formed, the heating unit is controlled to heat each substrate at a temperature lower than the vaporization temperature of the source gas, and when the dummy substrate is baked, the vaporization temperature of the source gas. A tenth substrate processing apparatus is provided for controlling the heating unit to heat the dummy substrate at a higher temperature.

  The “at least one source gas” is a reactive gas released from a dummy substrate when a desired film is continuously formed on the dummy substrate, and the characteristics of the monitor substrate adjacent to the dummy substrate ( Reactive gases that affect the film thickness etc. are included. In this case, particularly when the desired film is formed, the control unit controls the heating unit to heat the substrates at a temperature lower than the vaporization temperature of the reactive gas, and the dummy substrate is baked. When doing so, the heating unit is controlled so as to heat the dummy substrate at a temperature higher than the vaporization temperature of the reactive gas.

Preferably, in the tenth substrate processing apparatus,
A catalyst supply system for supplying the catalyst into the processing chamber;
The control unit controls the raw material supply system and the catalyst supply system so as to supply the catalyst simultaneously when supplying the raw material gas,
An eleventh substrate processing apparatus is provided in which the decomposition temperature of the catalyst is higher than the vaporization temperature of the source gas.

Preferably, in the eleventh substrate processing apparatus,
A twelfth substrate processing apparatus is provided in which the catalyst is any one of pyridine, pyrimidine, and quinoline.

Preferably, in any one of the tenth to twelfth substrate processing apparatuses,
The raw material supply system is
A first raw material supply system for supplying halide Si into the processing chamber as a first raw material gas;
A thirteenth substrate processing apparatus is provided that includes a second source supply system that supplies either H ₂ O or H ₂ O ₂ as a second source gas into the processing chamber.

Preferably, in any one of the ninth to thirteenth substrate processing apparatuses,
The controller is
A fourteenth substrate processing apparatus is provided for controlling the heating unit so that the temperature of the dummy substrate becomes 200 ° C. when the dummy substrate is baked.

Preferably, in any one of the ninth to fourteenth substrate processing apparatuses,
A pressure adjusting device for adjusting the pressure in the processing chamber;
The controller is
A fifteenth substrate processing apparatus is provided for controlling the pressure adjusting device so that a pressure when baking the dummy substrate is 0.5 to 3 Torr, which is a lower pressure than when forming the desired film. .

Preferably, in any one of the ninth to fifteenth substrate processing apparatuses,
The sixteenth substrate processing apparatus is provided in which the threshold number is the number of times that the unbaked cumulative film thickness reaches 2000 mm among the cumulative film thicknesses of the dummy substrate.

Preferably, in any one of the first to sixteenth substrate processing apparatuses,
A seventeenth substrate processing apparatus is provided in which at least one monitor substrate is disposed adjacent to the dummy substrate.

Preferably, in any one of the first to seventeenth substrate processing apparatuses,
Each of the substrates is disposed in a stacked state in the vertical direction in the processing chamber,
In the laminate composed of the product substrate, the monitor substrate, and the dummy substrate, the dummy substrate is disposed on an upper portion and a lower portion of the laminate, and at least one dummy substrate is adjacent to the monitor substrate. An eighteenth substrate processing apparatus disposed at the position is provided.

According to another preferred embodiment of the invention,
A processing chamber for storing a product substrate, a monitor substrate, and a dummy substrate in a stacked state in a vertical direction with a predetermined interval;
A first raw material supply system for supplying halide Si into the processing chamber as a first raw material gas;
A second raw material supply system for supplying H ₂ O as a second raw material gas into the processing chamber;
A catalyst supply system for supplying a catalyst having a decomposition temperature equal to or higher than a vaporization temperature of the second source gas into the processing chamber;
A heating unit for heating each of the substrates;
A controller that controls at least the first raw material supply system, the second raw material supply system, the catalyst supply system, and the heating unit;
Have
A substrate processing apparatus for alternately supplying the first source gas and the catalyst and the second source gas and the catalyst to form a desired film on the surface of each substrate;
In the laminate composed of the product substrate, the monitor substrate, and the dummy substrate, the dummy substrate is disposed on an upper portion and a lower portion of the laminate, and at least one of the monitor substrates is adjacent to the dummy substrate. Placed in a matching position,
Each time the desired film is formed a predetermined number of times, the dummy substrate is baked while being accommodated in the processing chamber,
When forming the desired film, each substrate is heated at a temperature lower than the vaporization temperature of the second source gas, and when baking the dummy substrate, at least the vaporization temperature of the second source gas. A nineteenth substrate processing apparatus for heating the dummy substrate at a higher temperature is provided.

Preferably, in the nineteenth substrate processing apparatus,
A twentieth substrate processing apparatus is provided in which the catalyst is any one of pyridine, pyrimidine, and quinoline.

Preferably, in any one of the 19th to 20th substrate processing apparatuses,
The controller is
A twenty-first substrate processing apparatus is provided for controlling the heating unit so that the temperature of the dummy substrate becomes 200 ° C. when the dummy substrate is baked.

Preferably, in any one of the nineteenth to twenty-first substrate processing apparatuses,
A pressure adjusting device for adjusting the pressure in the processing chamber;
The controller is
A twenty-second substrate processing apparatus is provided for controlling the pressure adjusting device so that a pressure when baking the dummy substrate is 0.5 to 3 Torr, which is a lower pressure than when forming the desired film. .

According to another preferred embodiment of the invention,
A product substrate, a monitor substrate, and a dummy substrate are accommodated in the processing chamber, and a desired source gas is supplied into the processing chamber while heating each substrate in a state where at least one monitor substrate is adjacent to the dummy substrate. And a method of baking at least the dummy substrate using a substrate processing apparatus for forming a desired film on the surface of each substrate,
Baking process for baking the dummy substrate each time the desired film is formed a predetermined number of times, with the dummy substrate being accommodated in a processing chamber, with at least a heating condition different from that for forming the desired film. A first baking method is provided.

Preferably, in the first baking method,
In the baking step, a second baking method is provided in which a catalyst having a decomposition temperature higher than the vaporization temperature of the raw material gas is supplied into the processing chamber simultaneously with the raw material gas.

Preferably, in the second baking method,
A third baking method is provided in which the catalyst is any one of pyridine, pyrimidine, and quinoline.

Preferably, in any one of the first to third baking methods,
The source gas is composed of at least a first source gas and a second source gas,
Halide Si is used as the first source gas,
A fourth baking method using either H ₂ O or H ₂ O ₂ as the second source gas is provided.

Preferably, in any one of the first to fourth baking methods,
The fifth baking method is provided in which the predetermined number of times is the number of times that the unbaked accumulated film thickness reaches 2000 mm among the accumulated film thicknesses of the dummy substrate.

Preferably, in any one of the first to fifth baking methods,
In the baking step, a sixth baking method for heating at least the dummy substrate to 200 ° C. is provided.

Preferably, in any one of the first to sixth baking methods,
A seventh baking method is provided in which the baking step is performed at a pressure of 0.5 to 3 Torr, which is lower than when the desired film is formed.

1 is a perspective view showing a schematic configuration of a substrate processing apparatus according to a preferred embodiment of the present invention. It is a schematic block diagram of the vertical processing furnace used in the preferable Example of this invention, and the member accompanying it, and has shown the processing furnace part with the longitudinal cross-section especially. It is the sectional view on the AA line of FIG. 3 is a diagram for schematically explaining classification of a wafer used as a substrate in a preferred embodiment of the present invention. FIG. 3 is a block diagram showing a schematic configuration of a controller used as a control unit in a preferred embodiment of the present invention. In a preferred embodiment of the present invention, it is a schematic view schematically showing how a film is formed on a wafer used as a substrate. In the preferred embodiment of the present invention, it is a diagram schematically showing the position of the monitor wafer used in the experiment as a monitor substrate on the boat. In the preferred embodiment of the present invention, it is a drawing schematically showing the film thickness distribution of each monitor wafer used in the experiment as a monitor substrate. In the preferred embodiment of the present invention, it is a drawing schematically showing the relationship between the cumulative film thickness of a dummy wafer used as a dummy substrate and the in-plane uniformity of the film thickness of the monitor wafer used as a monitor substrate. 4 is a diagram schematically showing the result of TDS analysis performed on a dummy wafer (cumulative film thickness of 2000 mm) used as a dummy substrate in a preferred embodiment of the present invention. In a preferred embodiment of the present invention, when water is released from a dummy wafer used as a dummy substrate, the in-plane uniformity of the film thickness of the monitor wafer used as the monitor substrate is schematically reduced. It is a model figure shown. 6 is a diagram schematically showing a result of performing TDS analysis on a dummy wafer after performing a baking process under a certain condition (a baking temperature of 200 ° C. and a baking time of 2 hours) in a preferred embodiment of the present invention. In a preferred embodiment of the present invention, the relationship between the cumulative film thickness of a dummy wafer used as a dummy substrate and the in-plane uniformity of the film thickness of a monitor wafer used as a monitor substrate after performing a baking process is roughly shown. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 101 Substrate processing apparatus 105 Cassette shelf 107 Reserve cassette shelf 110 Cassette 111 Case 114 Cassette stage 115 Boat elevator 118 Cassette transfer device 118a Cassette elevator 118b Cassette transfer mechanism 123 Transfer shelf 125 Wafer transfer mechanism 125a Wafer transfer device 125b Wafer transfer Elevator 125c Tweezer 128 Arm 134a, 134b Clean unit 147 Furnace shutter 200 Wafer 200a Product wafer 200b-200e Monitor wafer 200f, 200g Dummy wafer 201 Processing chamber 202 Processing furnace 203 Reaction tube 207 Heater 209 Manifold 210 Bottom plate 211 Top plate 212 Column 217 Boat 218 Boat support 219 Seal cap 220 O-ring 231 Exhaust 243e Valve 246 Vacuum pump 267 Boat rotation mechanism 280 Controller 285 Deposition execution unit 290 Baking execution unit 292 Counter 294 Storage unit 296 Comparison unit 310, 320 Source gas supply pipe 330 Catalyst supply pipe 312, 322, 332 Mass flow controller 314, 324 334 Valve 410, 420, 430 Nozzle 410a, 420a Gas supply hole 430a Catalyst supply hole 510, 520, 530 Carrier gas supply pipe 512, 522, 532 Mass flow controller 514, 524, 534 Valve

Claims (6)

A processing chamber for housing the product substrate, monitor substrate and dummy substrate;
A heating unit for heating each of the substrates;
A raw material supply system for supplying at least one raw material gas for forming a desired film on the surface of each substrate into the processing chamber;
Have
A product substrate, a monitor substrate, and a dummy substrate are accommodated in the processing chamber with at least one monitor substrate adjacent to the dummy substrate, and a desired film is formed on the surface of each substrate by supplying the source gas. Then, each time the desired film is formed a predetermined number of times, the heating is performed so that the dummy substrate is heated and baked at a temperature higher than the vaporization temperature of the source gas while the dummy substrate is accommodated in the processing chamber. A controller configured to control the unit;
A substrate processing apparatus. The substrate processing apparatus according to claim 1,
The controller is
A substrate processing apparatus configured to control the heating unit to heat each substrate at a temperature lower than a vaporization temperature of the source gas when forming the desired film. A processing chamber for storing a product substrate, a monitor substrate, and a dummy substrate in a state in which at least one monitor substrate is adjacent to the dummy substrate and stacked in a vertical direction with a predetermined interval;
A heating unit for heating each of the substrates;
A control unit for controlling at least the heating unit;
A substrate processing apparatus for forming a desired film on the surface of each substrate,
The controller is
A counter for counting the number of times of film formation on each substrate;
A storage unit for storing the number of times of film formation on each of the substrates;
A comparison unit that compares the number of times of film formation on each substrate with a predetermined threshold number of times;
When the number of times of film formation on each substrate reaches the threshold number of times , the dummy substrate is heated at a temperature higher than the vaporization temperature of the source gas while the dummy substrate is accommodated in a processing chamber. A baking execution unit for performing a baking process;
A substrate processing apparatus comprising: A processing chamber for storing a product substrate, a monitor substrate, and a dummy substrate in a stacked state in a vertical direction with a predetermined interval;
A first raw material supply system for supplying halide Si into the processing chamber as a first raw material gas;
A second raw material supply system for supplying H2O as a second raw material gas into the processing chamber;
A catalyst supply system for supplying a catalyst having a decomposition temperature equal to or higher than a vaporization temperature of the second source gas into the processing chamber;
A heating unit for heating each of the substrates;
A controller that controls at least the first raw material supply system, the second raw material supply system, the catalyst supply system, and the heating unit;
Have
A substrate processing apparatus for alternately supplying the first source gas and the catalyst and the second source gas and the catalyst to form a desired film on the surface of each substrate;
In the laminate composed of the product substrate, the monitor substrate, and the dummy substrate, the dummy substrate is disposed on an upper portion and a lower portion of the laminate, and at least one of the monitor substrates is adjacent to the dummy substrate. Placed in a matching position,
Each time the desired film is formed a predetermined number of times, the dummy substrate is baked while being accommodated in the processing chamber,
When forming the desired film, each substrate is heated at a temperature lower than the vaporization temperature of the second source gas, and when baking the dummy substrate, at least the vaporization temperature of the second source gas. A substrate processing apparatus, wherein the dummy substrate is heated at a higher temperature. A product substrate, a monitor substrate, and a dummy substrate are accommodated in the processing chamber, and a desired source gas is supplied into the processing chamber while heating each substrate in a state where at least one monitor substrate is adjacent to the dummy substrate. And a method of baking at least the dummy substrate using a substrate processing apparatus for forming a desired film on the surface of each substrate,
A baking step of baking the dummy substrate by heating the dummy substrate at a temperature higher than the vaporization temperature of the source gas while the dummy substrate is accommodated in a processing chamber each time the desired film is formed a predetermined number of times. Having baking method. A product substrate, a monitor substrate, and a dummy substrate are accommodated in the processing chamber, and a desired source gas is supplied into the processing chamber while heating each substrate in a state where at least one monitor substrate is adjacent to the dummy substrate. And a method of baking at least the dummy substrate using a substrate processing apparatus for forming a desired film on the surface of each substrate,
A baking step of baking the dummy substrate by heating the dummy substrate at a temperature higher than the vaporization temperature of the source gas while the dummy substrate is accommodated in a processing chamber each time the desired film is formed a predetermined number of times. A method for manufacturing a semiconductor device.