JP5234985B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a semiconductor wafer or a glass substrate of a liquid crystal display device (hereinafter simply referred to as a substrate) with a processing liquid.

  Conventionally, as this type of apparatus (first apparatus), a processing tank that stores a processing liquid and accommodates a substrate, a nozzle that surrounds the processing tank and supplies IPA (isopropyl alcohol) vapor to an upper space of the processing tank, (For example, refer to Patent Document 1).

  In the first apparatus, cleaning is performed by immersing the substrate in pure water in a state where pure water is stored in the treatment tank. Next, as the solvent vapor, for example, IPA vapor is supplied to the upper space to form a dry atmosphere, and the substrate is lifted from pure water to the dry atmosphere. Thereby, the pure water adhering to the substrate is replaced with water-soluble IPA vapor. Therefore, drying of pure water adhering to the substrate is promoted.

  Further, as this type of apparatus (second apparatus), a processing tank for storing liquid, an elevating mechanism for raising and lowering the substrate over the inside of the processing tank and above the processing tank, and heating the liquid above the liquid level For example, see Patent Document 2).

  In the second apparatus, when the substrate is pulled out of the liquid in the processing tank, the substrate is dried by irradiating the meniscus formed between the surface of the substrate and the surface of the liquid.

Japanese Patent Laid-Open No. 10-22257 Japanese National Patent Publication No. 11-507121

However, the conventional example having such a configuration has the following problems.
That is, in the first conventional apparatus, even when a solvent having a low surface tension is used, the substrate lifts pure water when the substrate is moved from the treatment tank to the dry atmosphere. For example, if a fine pattern is formed on the surface of the substrate, the substrate is lifted to a dry atmosphere with pure water entering between the fine patterns. Therefore, since a load is applied to the fine pattern of the substrate due to the surface tension of pure water, there is a problem that the fine pattern may collapse.

  In addition, although the conventional second apparatus dries the substrate from the liquid surface and dries it on the liquid surface, a load is already applied to the micropattern in a state where a meniscus is formed between the substrate surface and the liquid surface. Is on. Therefore, similarly to the first apparatus, there is a problem that the fine pattern may collapse due to the surface tension of pure water.

  The present invention has been made in view of such circumstances, and a substrate that can prevent a fine pattern from collapsing due to the surface tension of the processing liquid by heating the substrate to the boiling point of the processing liquid or higher. An object is to provide a processing apparatus and a substrate processing method.

In order to achieve such an object, the present invention has the following configuration.
That is, the invention according to claim 1 is a substrate processing apparatus for processing a substrate with a processing liquid, and stores the processing liquid and can store the substrate, and holds the substrate, and corresponds to the inside of the processing tank. A holding mechanism that can move between a processing position to be moved and an upper position corresponding to the upper side of the processing tank, and a heating unit that heats the substrate in the processing tank to a temperature not lower than the boiling point of the processing liquid in which the substrate is immersed A control unit that heats a portion of the substrate below the liquid level of the processing liquid by the heating unit when operating the holding mechanism to move the substrate in the processing liquid from the processing position to the upper position; , Are provided.

  [Operation / Effect] According to the invention described in claim 1, the control means is located below the liquid level of the processing liquid when the substrate in the processing liquid is moved from the processing position to the upper position by the holding mechanism. One part of the substrate is heated by a heating means. Since the substrate is heated to a temperature equal to or higher than the boiling point of the processing liquid, the processing liquid in contact with the substrate and the fine pattern boils and vaporizes. Therefore, in a state where the substrate is exposed from the processing liquid in the air, most of the processing liquid adhering to the substrate has already evaporated, so that a load is not applied to the fine pattern due to the surface tension of the processing liquid. As a result, it is possible to prevent the fine pattern from collapsing due to the surface tension of the treatment liquid.

  In the present invention, the heating means is a heating lamp provided below the opening edge formed in the upper part of the processing tank and below the liquid level of the processing liquid stored in the processing tank. It is preferable that it is present (claim 2). The substrate can be heated in a short time to a temperature equal to or higher than the boiling point of the treatment liquid by the heating lamp. Note that the heating lamp is more preferably a lamp that emits light having a larger absorption in the substrate than the treatment liquid, and a flash lamp capable of raising the temperature of the substrate in a short time is preferable.

  Moreover, in this invention, it is preferable that it is a heating coil provided below the liquid level of the process liquid which is lower than the opening edge formed in the upper part of the said process tank, and the said process tank has stored ( Claim 3). The substrate can be heated in a short time to a temperature equal to or higher than the boiling point of the treatment liquid by induction heating with the heating coil.

  Moreover, in this invention, it is preferable to provide the gas supply means which supplies the gas heated along the process liquid surface from the side at the opening edge of the said processing tank (Claim 4). Although the treatment liquid is vaporized by heating, depending on the type of the treatment liquid, the vaporized treatment liquid may condense and reattach to the fine pattern when the substrate exceeds the liquid surface of the treatment liquid. Therefore, by supplying the gas heated by the gas supply means, condensation can be prevented and re-adhesion of the treatment liquid can be prevented.

  In the present invention, the holding mechanism is provided in the processing tank, and is below the bottom of the processing tank corresponding to the processing position and the opening edge of the processing tank, and the maximum width portion of the substrate is processed. A lower holding mechanism that can be raised and lowered over a delivery position exposed from the liquid surface; and an upper holding mechanism that is provided above the processing tank and that can be raised and lowered over the processing tank corresponding to the upper position and the delivery position. (Claim 5). By transferring the substrate between the lower holding mechanism and the upper holding mechanism at the transfer position, it is possible to prevent the interference with the heating means provided at the lower part of the opening of the processing tank and to smoothly raise and lower the substrate. Can do.

  In the present invention, the chamber surrounding the treatment tank, the solvent vapor supply means for supplying the solvent vapor into the chamber, the pure water supply means for supplying pure water to the treatment tank, and the treatment tank Solvent supply means for supplying a solvent, and the control means supplies pure water from the pure water supply means into the processing tank to clean the substrate at the processing position, from the solvent supply means. After supplying the solvent into the treatment tank and replacing the pure water in the treatment tank with a solvent, the solvent vapor supply means supplies the solvent vapor into the chamber to form a dry atmosphere, and It is preferable that the substrate is moved to an upper position by the holding mechanism while the substrate is heated by the heating means. The control means supplies pure water from the pure water supply means to clean the substrate, and supplies the solvent from the solvent supply means to replace the pure water with the solvent. Thereafter, solvent vapor is supplied into the chamber by the solvent vapor supply means to form a dry atmosphere, and the substrate is moved to the upper position by the holding mechanism while the substrate is heated by the heating means, so that the droplets remaining on the substrate Can be dried quickly.

  According to a seventh aspect of the present invention, there is provided a substrate processing method for processing a substrate with a processing liquid, a process of cleaning a substrate at a processing position in the processing tank with pure water, and the pure water in the processing tank as a solvent. When the substrate in the processing tank is moved from the processing position to an upper position above the processing tank, a part of the substrate below the solvent level is heated at a temperature equal to or higher than the boiling point of the solvent. And a process of performing.

  [Operation / Effect] According to the invention described in claim 7, after the substrate is cleaned with pure water at the processing position and the pure water is replaced with the solvent, the substrate is moved from the processing position to the upper position. One part of the substrate below the liquid level of the solvent is heated to a temperature equal to or higher than the boiling point of the solvent. Since the substrate is heated to a temperature equal to or higher than the boiling point of the processing liquid, the processing liquid in contact with the substrate and the fine pattern boils and vaporizes. Therefore, in the state where the substrate is exposed from the processing liquid to the air, most of the processing liquid adhering to the substrate has already evaporated from the substrate, so that the fine pattern is not loaded by the surface tension of the processing liquid. . As a result, it is possible to prevent the fine pattern from collapsing due to the surface tension of the treatment liquid.

  In the present invention, the heating is preferably performed by a heating lamp (Claim 8) or a heating coil under the surface of the solvent (Claim 9).

  Moreover, in this invention, it is preferable to provide the process of supplying the heated gas with respect to the board | substrate exposed from the liquid level of the solvent after the said process of heating (Claim 10).

  According to the substrate processing apparatus of the present invention, when the control unit moves the substrate in the processing liquid from the processing position to the upper position by the holding mechanism, the control unit moves a part of the substrate below the liquid surface of the processing liquid. Heat by heating means. Since the substrate is heated to a temperature equal to or higher than the boiling point of the processing liquid, the processing liquid in contact with the substrate and the fine pattern boils and vaporizes. Therefore, in a state where the substrate is exposed from the processing liquid in the air, most of the processing liquid adhering to the substrate has already evaporated, so that a load is not applied to the fine pattern due to the surface tension of the processing liquid. As a result, the collapse of the fine pattern due to the surface tension of the treatment liquid can be prevented.

It is a schematic diagram explaining collapse of the micro pattern resulting from surface tension. It is a schematic diagram explaining an operation principle, (a) shows a state where a substrate is immersed, (b) shows a heated state, and (c) shows a state at a gas-liquid interface. 1 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to a first embodiment. It is a side view of a processing tank. It is a schematic diagram concerning operation | movement description, (a) shows a delivery state, (b) shows the movement state to a processing position, (c) shows a pure water washing | cleaning state, (d) is the substituted state by HFE Indicates. It is the schematic diagram which concerns on operation | movement description, (a) shows the processing state by HFE, (b) shows the state which formed the dry atmosphere, (c) shows a heating and moving state, (d) is upper position The dry state in is shown. FIG. 6 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to a second embodiment. It is a side view of a processing tank. It is a top view of a processing tank.

  The outline of the present invention will be described with reference to FIGS. FIG. 1 is a schematic diagram for explaining collapse of a micropattern due to surface tension, FIG. 2 is a schematic diagram for explaining an operation principle, and (a) shows a state in which a substrate is immersed, (B) shows the heated state, and (c) shows the state at the gas-liquid interface.

  A certain fine pattern mp is formed on the substrate W. For example, the substrate W is immersed in pure water to perform a pure water cleaning process. Then, the state which pulled up the board | substrate W from the pure water is demonstrated to an example. When attention is paid to a certain fine pattern mp1, the code ST (ST1, ST2) in FIG. 1 is the surface tension acting on the minute pattern mp1. If the surface tensions ST1 and ST2 acting on both sides of the fine pattern mp1 have different magnitudes or the action points of the surface tensions ST1 and ST2 are different, the total surface applied to the fine pattern mp1 acts only on one side. Then, the fine pattern mp1 collapses. In addition, the drying speed in all the fine patterns mp is not uniform and there is a certain degree of variation, so the speed at which the point of action decreases is also different, which also causes the fine pattern mp to collapse. Yes.

  Therefore, the present invention has focused on shortening the time during which the surface tension acts in order to reduce the surface tension acting on the fine pattern mp. The outline will be described. First, as shown in FIG. 2A, the substrate W on which the fine pattern mp is formed is immersed in the processing liquid. At this time, the processing liquid is filled between the fine patterns mp. Next, as shown in FIG. 2B, heating energy E is applied to the substrate W before the substrate W is pulled out of the processing liquid, specifically, before the fine pattern mp crosses the gas-liquid interface. . The temperature at which the substrate W is heated is higher than the boiling point of the processing liquid. As a result, the processing liquid in contact with the substrate W including the fine pattern mp is vaporized, so that a cavity CV not in contact with the processing liquid is formed around the heated portion. In this state, when the substrate W is pulled upward, even if the micro pattern mp passes through the gas-liquid interface, the processing liquid is already vaporized and does not exist. Therefore, the surface tension of the processing liquid is present in the micro pattern mp. There is no participation. Therefore, the collapse of the fine pattern mp due to the surface tension of the processing liquid can be prevented.

  An apparatus for performing the above-described processing will be described below.

Embodiment 1 of the present invention will be described below with reference to the drawings.
FIG. 3 is a block diagram illustrating a schematic configuration of the substrate processing apparatus according to the first embodiment. FIG. 4 is a side view of the treatment tank.

  The processing tank 1 includes an inner tank 3 and an outer tank 5. The inner tank 3 is configured to accommodate the substrate W. A pair of injection pipes 7 are provided at the bottom of the inner tank 3. One end side of the circulation pipe 9 is connected to the pair of injection pipes 7 in communication. The other end of the circulation pipe 9 is connected to the bottom of the outer tank 5 that collects the processing liquid overflowing from the inner tank 3.

  A circulation pump 11, a branch part 13, and a mixing valve 15 are attached to the circulation pipe 9 from the upstream side. The circulation pump 11 circulates the processing liquid in the circulation pipe 9. One end of a drainage pipe 17 is connected to the branch part 13 in communication. An open / close valve 19 is attached to the drain pipe 17. The other end of the drainage pipe 17 is connected to a waste liquid facility (not shown).

  For example, one end side of two supply pipes 21 and 23 is connected to the mixing valve 15 in communication. The other end side of the supply pipe 21 is connected to, for example, a pure water supply source, and the other end side of the supply pipe 23 is connected to, for example, a solvent supply source. A flow rate control valve 25 capable of adjusting the flow rate is attached to the supply pipe 21. Further, a flow rate control valve 27 capable of adjusting the flow rate is attached to the supply pipe 23. Here, it is assumed that a solvent containing HFE and a small amount of IPA is stored in the solvent supply source, but in the following description, it is simply referred to as HFE.

  The supply pipe 21, the mixing valve 15, the circulation pipe 9, and the injection pipe 7 correspond to the “pure water supply means” in the present invention, and the supply pipe 23, the mixing valve 15, the circulation pipe 9, and the injection pipe 7 in the present invention. Corresponds to “solvent supply means”.

  A lower holding mechanism 29 is provided in the inner tank 3. The lower holding mechanism 29 holds a plurality of substrates W in an upright posture. As shown in FIG. 4, the lower holding mechanism 29 includes a back plate 31 and three holding members 33 attached to the lower portion of the back plate 31 (only two are shown in FIG. 4 because of the illustration). ing. The holding member 33 contacts each lower edge of the plurality of substrates W and holds each substrate W. The lower holding mechanism 29 has a processing position corresponding to the bottom of the inner tub 3 (position indicated by a solid line in FIGS. 1 and 2) and a delivery position corresponding to the upper portion of the inner tub 3 (indicated by a two-dot chain line in FIGS. 1 and 2). Position). The delivery position in the present embodiment is a position where the maximum width portion of the substrate W is exposed from the processing liquid surface.

  The processing tank 1 described above is entirely surrounded by a chamber 35. An injection port 37 is provided on one side wall (left side in FIG. 1) of the chamber 35, and an exhaust port is provided on the other side wall (right side in FIG. 1) of the chamber 35 facing the injection port 37 in the horizontal direction. 39 is provided. Air that is heated to a predetermined temperature is supplied to the injection port 37 from a hot air supply source. The hot air ejected from the ejection port 37 is exhausted from the exhaust port 39 while forming a laminar flow along the processing liquid surface of the processing tank 1.

  The injection port 37 corresponds to the “gas supply means” in the present invention.

  Nozzles 41 are attached to both side walls near the ceiling of the chamber 35. An HFE vapor supply source is connected to the nozzle 41 so as to supply HFE vapor.

  The nozzle 41 corresponds to the “solvent vapor supply means” in the present invention.

  An upper holding mechanism 43 is provided above the processing tank 1 in the chamber 35. The upper holding mechanism 43 includes an elevating member 45 and a clamping mechanism 47. The clamping mechanism 47 clamps the vicinity of the maximum diameter of the substrate W. The upper holding mechanism 43 is located above the processing tank 1 and directly below the ceiling of the chamber 35 (a position indicated by a solid line in FIG. 1) and the above-described delivery position (a position indicated by a two-dot chain line in FIG. 1). Go up and down.

  The lower holding mechanism 29 described above is moved up and down by a lift drive unit 49. Further, the upper holding mechanism 43 described above is moved up and down by the lift drive unit 51.

  The lower holding mechanism 29 and the upper holding mechanism 43 correspond to the “holding mechanism” in the present invention.

  A heating unit 55 is provided in the opening 53 of the inner tank 3. The heating unit 55 includes a plurality of heating lamps 57 covered with a member resistant to the processing liquid. In this embodiment, since it is a batch type that simultaneously processes a plurality of substrates W, each heating lamp 57 is arranged between each substrate W in the standing posture. Each heating lamp 57 is disposed below the edge of the opening 53 of the inner tank 3 and below the surface of the processing liquid. The heating lamp 57 heats the substrate W, but preferably has a posture in which light is irradiated onto the surface on which the fine pattern is formed. This is because the fine pattern can be efficiently heated. The heating temperature is higher than the boiling point of the processing liquid stored in the inner tank 3 when the substrate W is pulled up. When the processing liquid at the time of pulling up the substrate W is HFE, since the boiling point of HFE is about 54 ° C., for example, it is about 54 ° C. or more and 100 ° C. or less. The heating lamp 57 is preferably a lamp having a wavelength with little absorption into the processing liquid and large absorption into the substrate W and the fine pattern mp, for example, a flash lamp. By using this kind of lamp, the temperature can be raised in a short time. The heating unit 55 is controlled to be non-irradiated / irradiated by a lamp driving source 59.

  The heating unit 55 corresponds to the “heating means” in the present invention.

  Opening / closing operation of the pump 11, the opening / closing valve 19 and the flow rate control valves 25, 27, control of hot air by the elevating drive units 49, 51, the injection port 37 and the exhaust port 39, supply control of HFE vapor from the nozzle 41, lamp driving The source 59 is comprehensively controlled by a control unit 61 corresponding to “control means” in the present invention.

  Next, the operation of the above-described apparatus will be described with reference to FIGS. 5A and 5B are schematic diagrams for explaining the operation, in which FIG. 5A shows a delivery state, FIG. 5B shows a movement state to a processing position, FIG. 5C shows a pure water cleaning state, and FIG. ) Indicates a substitution state by HFE. 6A and 6B are schematic diagrams for explaining the operation, in which FIG. 6A shows a treatment state by HFE, FIG. 6B shows a state where a dry atmosphere is formed, FIG. 6C shows a heating and moving state, and FIG. ) Indicates the dry state in the upper position.

  The control unit 61 operates the lift drive units 49 and 51. Then, the lower holding mechanism 29 is put on standby at the delivery position, and the upper holding mechanism 43 holding the substrate W is lowered to the standby position (FIG. 5A). At this time, the flow control valve 25 is operated to inject pure water into the circulation pipe 9, and the circulation pump 11 is operated to supply pure water to the inner tank 3.

  The control unit 61 retracts the upper holding mechanism 43 to the upper position and lowers the lower holding mechanism 29 to the processing position (FIG. 5B). This state is maintained for a predetermined time, and the substrate W is cleaned with circulating pure water (FIG. 5C).

  When the pure water cleaning process for a predetermined time is completed, the control unit 61 closes the flow control valve 25 to shut off the supply of pure water and opens the on-off valve 19. Thereby, the pure water used for washing is drained from the circulation line. Further, the controller 61 opens the flow rate control valve 27 and supplies HFE from the injection pipe 7 to the inner tank 3 (FIG. 5D). In that case, it is preferable to reduce the flow rate. Since the specific gravity of HFE is larger than that of pure water, pure water can be discharged while maintaining the boundary between the pure water and HFE in the inner tank 3, and the inner tank 3 can be efficiently replaced with HFE. Because it can. When the inner tank 3 is replaced with HFE, the control unit 61 closes the on-off valve 19.

  After the inner tub 3, the outer tub 5, and the circulation pipe 9 are filled with HFE, the HFE is circulated for a predetermined time to replace as much pure water as possible in the fine pattern mp of the substrate W (FIG. 6 ( a)). When the replacement process for a predetermined time is completed, the control unit 61 supplies HFE vapor from the nozzle 41 to form a dry atmosphere above the processing tank 1 in the chamber 35 (FIG. 6B). Further, the control unit 61 operates the lamp driving source 59 to irradiate light from the heating unit 55 and to eject hot air from the ejection port 37. Next, the control unit 61 operates the elevating drive unit 49 to raise the lower holding mechanism 29 from the processing position to the delivery position at a constant speed (FIG. 6C). Thereby, only one part of the substrate W under the liquid level is heated and gradually exposed from the liquid level.

  Although the vaporized HFE may condense and reattach to the fine pattern mp exposed in the air, such inconvenience can be prevented because hot air is ejected from the ejection port 37.

  At this time, as shown in FIGS. 2A to 2C, when the fine pattern mp of the substrate W is exposed from the liquid surface of the HFE, the HFE between the fine patterns mp is vaporized. The fine pattern mp does not lift the liquid HFE upward from the liquid surface. In addition, HFE vapor condenses and volatilizes on a part of the substrate W exposed from the liquid surface, and drying is promoted. At this time, the inside of the chamber 35 may be decompressed so that drying can be performed more quickly.

  Next, the control unit 61 lowers the upper holding mechanism 43 to the delivery position, holds the substrate W exposed from the liquid surface by about half, and then rises at a constant speed to the upper position where the dry atmosphere is formed. (FIG. 6D). At this time, the lower half of the substrate W is gradually exposed from the liquid surface. However, since the HFE between the fine patterns mp is vaporized, the fine patterns mp do not lift the liquid HFE. Further, as described above, drying is promoted by the condensation and volatilization of HFE. By maintaining the upper holding mechanism 43 for a predetermined time in this dry atmosphere, the cleaning / drying process for the substrate W is completed.

  As described above, according to the apparatus of this embodiment, the controller 61 moves the substrate W in the HFE from the processing position to the upper position by the lower holding mechanism 29 and the upper holding mechanism 43 rather than the liquid level of the HFE. A portion of the substrate W located below is heated by the heating unit 55. Since the substrate W is heated to a temperature equal to or higher than the boiling point of HFE, the HFE in contact with the substrate W and the fine pattern mp boils and vaporizes. Therefore, in a state where the substrate W is exposed from the HFE in the air, most of the HFE adhering to the substrate W has already evaporated, so that the fine pattern mp is not loaded by the surface tension of the HFE. As a result, it is possible to prevent the fine pattern mp from collapsing due to the surface tension of the HFE.

  Further, since the lower holding mechanism 29 and the upper holding mechanism 43 are moved up and down in two stages via the delivery position, the substrate can be smoothly prevented from being interfered with the heating unit 55 provided at the lower opening of the processing tank 1. W can be raised and lowered.

  In addition, since HFE, which is a fluorinated solvent, is used to form the treatment liquid during heating and the dry atmosphere, it is not necessary to adopt an explosion-proof structure, and the apparatus cost can be reduced.

Next, Embodiment 2 of the present invention will be described with reference to the drawings.
FIG. 7 is a block diagram illustrating a schematic configuration of the substrate processing apparatus according to the second embodiment. FIG. 8 is a side view of the processing tank, and FIG. 9 is a plan view of the processing tank.

  In addition, about the structure which is common in Example 1 mentioned above, detailed description is abbreviate | omitted by attaching | subjecting a same sign.

  This embodiment apparatus is different from the above-described embodiment apparatus in that the heating unit 55 </ b> A is composed of a plurality of heating coils 63. The heating coil 63 is disposed below the edge of the opening 53 of the inner tank 3 and immediately below the processing liquid level stored in the inner tank 3. The heating coil 63 induction-heats the substrate W to a temperature higher than the boiling point of the processing liquid stored in the inner tank 3 when the substrate W is pulled up by electromagnetic induction. The control is directly performed by the coil power supply 65. The coil power supply 65 outputs a predetermined output capable of heating the substrate W to a target temperature and an AC voltage having a predetermined frequency. The coil power supply 65 is operated by the control unit 61.

  As shown in FIG. 9, the heating coil 63 has an opening length slightly wider than the maximum diameter of the substrate W in a plan view, and has an opening width slightly wider than the thickness of the substrate W. The heating coil 63 is covered with a member having resistance to the processing liquid.

  The heating unit 55A corresponds to the “heating means” in the present invention.

  Even with the configuration described above, the substrate W can be heated in a short time to a temperature equal to or higher than the boiling point of the processing liquid by induction heating by the heating coil 63, and the same effect as in the first embodiment can be obtained.

  The present invention is not limited to the above embodiment, and can be modified as follows.

  (1) In each of the above-described embodiments, the two-step lifting by the lower holding mechanism 29 and the upper holding mechanism 43 is used. However, when only one substrate W is processed, the substrate is moved by one holding mechanism. You may make it raise / lower.

  (2) In each of the above-described embodiments, HFE is used as a processing liquid when pulling up the substrate W, but the present invention is not limited to this. For example, HFC (hydrofluorocarbon) or IPA may be employed instead of the treatment liquid.

(3) In each embodiment described above, although supplying hot air from the injection port 37, which may be used as the hot N _2. Further, in the case where re-adhesion of the processing liquid vaporized by heating is difficult to occur, the injection port 37 and the exhaust port 39 are not necessarily provided.

  (4) In each of the embodiments described above, the heating lamp 57 and the heating coil 63 are used as the heating means. Instead of this, the laser beam is scanned and irradiated onto the substrate W, and one of the substrates W just below the liquid surface is used. It is good also as a structure which heats a site | part.

  (5) In each of the above-described embodiments, the heating means is disposed below the liquid surface, but it may be configured such that only one portion of the substrate W below the liquid surface is heated from above. . Further, the lower holding mechanism 29 and the upper holding mechanism 43 may be provided with heating means.

  (6) Although each embodiment described above includes the chamber 35, the present invention does not necessarily include the chamber 35. The same applies to the nozzle 41.

  (7) In each of the above-described embodiments, only one portion of the substrate W below the liquid level is heated by the heating means, but the entire substrate W may be heated.

W ... Substrate mp, mp1 ... Fine pattern ST, ST1 ... Surface tension E ... Energy CV ... Cavity 1 ... Treatment tank 3 ... Inner tank 5 ... Outer tank 7 ... Injection pipe 9 ... Circulation pipe 11 ... Circulation pump 15 ... Mixing valve DESCRIPTION OF SYMBOLS 17 ... Drain pipe 29 ... Lower holding mechanism 35 ... Chamber 41 ... Nozzle 43 ... Upper holding mechanism 53 ... Opening 55,55A ... Heating unit 57 ... Heating lamp 61 ... Control part 63 ... Heating coil

Claims (10)

In a substrate processing apparatus for processing a substrate with a processing liquid,
A processing tank for storing the processing liquid and accommodating the substrate;
A holding mechanism that holds the substrate and is movable between a processing position corresponding to the inside of the processing tank and an upper position corresponding to the upper side of the processing tank;
Heating means for heating the substrate in the processing tank to a temperature equal to or higher than the boiling point of the processing liquid in which the substrate is immersed;
Control means for heating a portion of the substrate below the liquid level of the processing liquid by the heating means when operating the holding mechanism to move the substrate in the processing liquid from the processing position to the upper position;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The heating means is a heating lamp provided below the opening edge formed in the upper part of the processing tank and below the liquid level of the processing liquid stored in the processing tank. Substrate processing equipment. The substrate processing apparatus according to claim 1,
The heating means is a heating coil provided below the opening edge formed in the upper part of the processing tank and below the liquid level of the processing liquid stored in the processing tank. Substrate processing equipment. In the substrate processing apparatus according to claim 1,
A substrate processing apparatus comprising gas supply means for supplying gas heated along the processing liquid surface from the side at an opening edge of the processing tank. In the substrate processing apparatus according to claim 1,
The holding mechanism is
It can be moved up and down across the bottom of the processing tank corresponding to the processing position and the transfer position below the opening edge of the processing tank where the maximum width of the substrate is exposed from the processing liquid surface. A lower holding mechanism,
An upper holding mechanism which is provided above the processing tank and can be moved up and down over the processing tank corresponding to the upper position and the delivery position;
A substrate processing apparatus comprising: In the substrate processing apparatus in any one of Claim 1 to 5,
A chamber surrounding the processing tank;
Solvent vapor supply means for supplying solvent vapor into the chamber;
Pure water supply means for supplying pure water to the treatment tank;
A solvent supply means for supplying a solvent to the treatment tank;
With
The control means supplies pure water into the processing tank from the pure water supply means, cleans the substrate at the processing position, supplies a solvent from the solvent supply means into the processing tank, and After the pure water in the treatment tank is replaced with a solvent, the solvent vapor supply means supplies the solvent vapor into the chamber to form a dry atmosphere, and the heating mechanism heats the substrate with the holding mechanism. A substrate processing apparatus for moving a substrate to an upper position. In a substrate processing method for processing a substrate with a processing liquid,
Cleaning the substrate at the processing position in the processing tank with pure water;
A process of replacing pure water in the treatment tank with a solvent;
When the substrate in the processing tank is moved from the processing position to an upper position above the processing tank, a part of the substrate below the liquid level of the solvent is heated at a temperature equal to or higher than the boiling point of the solvent;
A substrate processing method characterized by comprising: In the substrate processing method of Claim 7,
The substrate processing method according to claim 1, wherein the heating is performed by a heating lamp below a liquid level of the solvent. In the substrate processing method of Claim 7,
The substrate processing method according to claim 1, wherein the heating is performed by a heating coil under a liquid level of the solvent. In the substrate processing method in any one of Claim 7 to 9,
A substrate processing method comprising a step of supplying a heated gas to the substrate exposed from the liquid surface of the solvent after the heating step.

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