JP5233626B2 - Insulating film manufacturing method, reaction apparatus, power generation apparatus, and electronic apparatus - Google Patents

Description

  The present invention relates to a method for manufacturing an insulating film formed on the surface of a metal substrate, a reaction apparatus, a power generation apparatus, and an electronic apparatus.

In recent years, electronic devices such as notebook computers, mobile phones, digital cameras, and the like have become very conscious of downsizing and weight reduction, and accordingly, miniaturization of components mounted in the devices is required. Therefore, MEMS (Micro Electro Mechanical Systems) technology is known as a technology for creating micro devices such as small sensors, pumps, actuators, motors, chemical reactors, etc., utilizing the silicon wafer processing technology accumulated in the development of semiconductor devices. It has been. For example, in the field of reforming fuel cells, the MEMS technology is used in a small reforming reactor called a microreactor module in which a vaporizer, a reformer, and a carbon monoxide remover are stacked.
Each reactor (microreactor) of the microreactor module is formed by forming a fine groove on a substrate and joining the substrate on which the groove is formed, and the groove serves as a flow path. Each reaction channel is formed with a catalyst for promoting the reaction. FIG. 19 shows a case where the substrate is a glass substrate. A thin film heater / temperature sensor 405 and an insulating protective layer 406 are formed on the substrate 400. 19A is a plan view of the substrate 400, and FIG. 19B is a cross-sectional view taken along the cutting line XIX-XIX in FIG. As shown in FIG. 19B, a thin film heater / temperature sensor 405 including an adhesion layer 401, a diffusion prevention layer 402, a heating resistance layer 403, and a diffusion prevention layer 404 on the surface of the substrate 400, and an insulating protection layer 406 are provided. Is formed. Note that the flow path is not shown for the sake of illustration. Such a thin film heater / temperature sensor has a desired temperature control role and a temperature sensing role at 280 to 400 ° C. in the steam reformer and 100 to 180 ° C. in the carbon monoxide remover.

  When the microreactor is manufactured based on a metal substrate as described above, both the substrate and the thin film heater have electrical conductivity, and voltage is applied to the thin film heater. An insulating film is required between the two. In the case of the metal microreactor described in Patent Document 1, the substrate itself is anodized as an insulating film, and an insulating film having a thickness of 5 to 150 μm is provided. However, an insulating film formed by anodic oxidation often has a porous structure, and an insulating film having a high withstand voltage cannot be expected. In addition, since the insulating film is as thick as 5 to 150 μm, the metal substrate is also thick, and there is a problem that it is not suitable for high-speed startup considering that the heat capacity of the reactor increases accordingly. Furthermore, since the microreactor is operated in a high temperature environment, the substrate to be selected must be made of a metal having high heat resistance (for example, Ni-containing alloy such as Ni, Ni-Cr alloy, Inconel). is there.

On the other hand, it is known that YO _x is used as an electron emission film of a cold cathode (see, for example, Patent Document 2). The YO _x crystals depend on the oxygen concentration in the oxidation process, and five types of films are produced. Among them, a YO _x (1.32> X ≧ 0.95) film containing NaCl type is suitable as an electron emission film for a cold cathode. How to create YO _x film on the substrate which has undergone the washing step (here those containing Ni and Cr), the Y metallic film is formed by vapor deposition or sputtering, an oxidation process. After that, if the film is microcrystalline or amorphous, an annealing process is performed separately.
JP 2004-256387 A JP-A-10-269986

However, YO _x produced in Patent Document 2 has a range of X that is out of stoichiometry as 1.32> X ≧ 0.95, and behaves as a good conductor in terms of electrical properties. Therefore, there is a problem that it cannot be used as an interlayer insulating film.
On the other hand, in the case of using the SiO ₂ film known in the high-voltage material as an interlayer insulating film, vapor deposition, sputtering, CVD, it is deposited by a coating method such as a SiO ₂ film is usually amorphous (amorphous ) Structure. As shown in FIG. 20, the amorphous SiO ₂ has a linear expansion coefficient of 0.5 to 0.6 (10 ⁻⁶ / ° C.) and a metal linear expansion coefficient of 10 to 14 (10 ⁻⁶ / ° C.). Is two orders of magnitude smaller. In a small device such as a chemical reactor used in a temperature environment higher than room temperature, the mismatch in the thermal expansion coefficient between the substrate and the film causes distortion of the substrate, cracking and peeling of the interlayer insulating film, and finally the metal substrate. There is a problem that the reliability of electrical insulation between the heating elements is lowered. This problem is common not only to small reactors but also to high temperature operation devices such as solid oxide fuel cells that operate at temperatures as high as 600 ° C to 900 ° C.
Accordingly, the present invention has been made in view of the above circumstances, and an object thereof is to provide an insulating film manufacturing method, a reaction apparatus, a power generation apparatus, and an electronic apparatus that can improve the withstand voltage of an interlayer insulating film. .

To solve the above problems, the invention of claim 1, in the manufacturing method of the insulating film, the surface of the metal substrate is selected S c, Y, La, Gd , Dy, Ho, Er, Tm, and Lu, A vapor deposition step of performing vapor deposition using a vapor deposition source comprising at least one rare earth element R and hydrogen; and an oxidation step of oxidizing the metal substrate after vapor deposition into an R ₂ O ₃ film, To do.

The invention of claim 2 is a method of manufacturing an insulating film,
Forming a first R ₂ O ₃ film containing a rare earth element R of Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu on the surface of the metal substrate;
On the first R ₂ O ₃ film, a deposition step for depositing using a deposition source consisting of one rare earth element R and hydrogen even without low, the oxidation step of oxidizing the metal substrate after deposition Forming a second R ₂ O ₃ film containing
It is characterized by including.

The invention of claim 3 is a method of manufacturing an insulating film,
Vapor deposition process for performing vapor deposition on the surface of the metal substrate using a vapor deposition source composed of at least one rare earth element R selected from Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu, and hydrogen. Forming a first R2O3 film comprising: an oxidation step of oxidizing the metal substrate after vapor deposition;
On the first R ₂ O ₃ film, forming a second R ₂ O ₃ film containing the rare earth element R,
It is characterized by including.

Invention of Claim 4 in the manufacturing method of the insulating film as described in any one of Claims 1-3,
The oxidation step is performed in a pressure atmosphere lower than atmospheric pressure.

The invention of claim 5 is a reaction apparatus,
An insulating film manufactured by the method for manufacturing an insulating film according to any one of claims 1 to 4 is provided between the metal substrate and the thin film heater .

Invention of Claim 6 is the reaction apparatus of Claim 5,
A reformer that reforms the fuel to generate hydrogen is provided.

The invention of claim 7 is the reaction apparatus according to claim 6,
A solid oxide type power generation cell is provided.

The invention of claim 8 is the power generator,
Comprising the reactor according to any one of claims 5 to 6,
Electricity is generated by the product generated by the reactor.

The invention of claim 9 is the power generator,
The reactor according to claim 7 is provided .

The invention of claim 10 is an electronic device,
A power generator according to any one of claims 8 to 9 ,
And an electronic device main body that operates by electricity generated by the power generation device.

According to the present invention, an R ₂ O ₃ film having a crystal structure can be formed between a metal substrate and a thin film heater, and the difference in thermal expansion coefficient with the metal substrate can be reduced, so that the metal can be used in a high temperature environment. It is possible to prevent cracking and peeling of the insulating film, which are likely to occur when the substrate is distorted, and to improve the reliability as the insulating film. In addition, the R ₂ O ₃ film can be formed without oxidizing the metal substrate. Furthermore, when the insulating film has a two-layer structure, pinholes in the film can be reduced, a highly reliable insulating film can be provided, and in addition, a film can be produced by a method different from the upper layer and the lower layer Therefore, it is possible to suppress warping that occurs in the film production stage.

The best mode for carrying out the present invention will be described below with reference to the drawings. However, although various technically preferable limitations for implementing the present invention are given to the embodiments described below, the scope of the invention is not limited to the following embodiments and illustrated examples.
[First embodiment]
FIG. 1 is an exploded perspective view of a microreactor 1 in an embodiment of a reaction apparatus according to the present invention.
The microreactor 1 is a reaction device that generates hydrogen gas used in a power generation cell (fuel cell), for example, built in an electronic device such as a notebook personal computer, PDA, electronic notebook, digital camera, mobile phone, wristwatch, register, projector. It is.
The microreactor 1 is a rectangular thin plate-like top plate 2 and bottom plate 3, and a plan view standing between the top plate 2 and the bottom plate 3 so as to be perpendicular to the lower surface of the top plate 2 and the upper surface of the bottom plate 3. L-shaped frame bodies 4, 4 and three partition walls 5, 5 as an example of a thin plate provided inside the frame bodies 4, 4 so as to be perpendicular to the inner wall surface in the longitudinal direction of the frame bodies 4, 4. , ... are provided. The inner side of the frame bodies 4 and 4 is partitioned by the three partition walls 5, 5,. The height of the partition walls 5, 5,... Is substantially equal to the height of the surrounding frame 4. Further, gaps (inlet and outlet) are formed between both end portions of the frames 4 and 4 so as to communicate with the flow path 6.
The top plate 2, the bottom plate 3, the frames 4, 4 and the partition walls 5, 5,. The bottom plate 3, the frame bodies 4, 4, the partition walls 5, 5, ... and the top plate 2 are joined by brazing. Further, the catalyst is supported on the upper surface of the bottom plate 3 forming the flow path 6 of the microreactor 1, the lower surface of the top plate 2, the inner side surfaces of the frames 4, 4, and both side surfaces of the partition walls 5, 5. The catalyst preferably contains at least one kind of metal species or at least one kind of metal oxide, and specifically includes platinum catalysts, Cu / ZnO-based catalysts, Pd / ZnO-based catalysts, and the like. .

2A is a bottom view of the bottom plate 3, and FIG. 2B is a cross-sectional view taken along the cutting line II-II in FIG. 2A.
An insulating film 31 is formed on the entire bottom surface of the bottom plate 3. The insulating film 31 is a Y ₂ O ₃ film having a crystal structure. The crystal structure is C-type (Bixbite structure) (details will be described later). By having a crystal structure, atoms are packed more densely than amorphous, so thermal expansion increases, and as a result, the coefficient of linear expansion is 7.2 × 10 ⁻⁶ / ° C. This is preferable in that it is close to the linear expansion coefficient of a certain bottom plate 3.

Here, two methods for manufacturing the Y ₂ O ₃ film having the bixbyite structure as the insulating film 31 will be described.
<First manufacturing method>
First, after forming a Y film on the lower surface of the metal substrate (bottom plate 3) by sputtering, the formed Y film has an amount of hydrogen of 4% or less and the remaining inert gas (Ar, Ne, N ₂ gas). In an atmosphere, a YH ₂ film is formed by baking at a temperature of 300 to 400 ° C. for 15 minutes, and further, the YH ₂ film is baked at 520 to 800 ° C. for 30 minutes in a vacuum atmosphere (1 × 10 ⁻⁴ Pa). Thus, a film can be formed. Note that a Y ingot containing no hydrogen is used as a sample for sputtering. Further, the method for forming the Y film is not limited to the sputtering method, but may be a vapor deposition method, a CVD method, an ion plating method, a coating method, or the like. The thickness of the metal substrate is 0.5 mm or less, and the thickness of the insulating film 31 is preferably in the range of about 200 to 600 nm in relation to the thickness of the substrate.
Note that the YH ₂ film is easier to take in oxygen than the Y film and has a function of increasing the diffusion rate of oxygen in the film, so that even in a vacuum atmosphere, the trace amount of oxygen remaining in the furnace ( 0.1 to 1 (× 10 ⁻⁶ Pa)) is taken in and replaced with hydrogen, and a Y ₂ O ₃ film is formed. FIG. 3 plots the hydrogen partial pressure value in the furnace against time when the temperature was raised to 700 ° C. at a rate of 10 ° C./min in vacuum and held at 700 ° C. for 30 minutes. At the start of temperature increase, the hydrogen partial pressure in the furnace was 1 to 2 (× 10 ⁻⁶ Pa). However, since the hydrogen partial pressure gradually increases as the temperature rises, hydrogen is removed from the YH ₂ film. It can be understood that it is detached. At the same time, it is considered that a Y ₂ O ₃ film was formed from the X-ray diffraction measurement results described later. Since the hydrogen partial pressure is the highest at 520 ° C. and shows a value of 2400 (× 10 ⁻⁶ Pa), it can be said that a firing temperature of 520 ° C. is sufficient for the production of the Y ₂ O ₃ film.

<Second production method>
FIG. 4 is a diagram for explaining a vapor deposition method in the second manufacturing method.
First, the Y ingot as a deposition source is baked at a temperature of 300 to 400 ° C. for 1 hour in an atmosphere of 4% or less of hydrogen and the remainder of an inert gas (Ar, Ne, N ₂ gas). The contained Y ingot 7 is prepared in advance. Next, using a hydrogen-containing Y ingot 7, the metal substrate (bottom plate 3) had a temperature of 280 ° C., a degree of vacuum during film formation of 3 to 5 (× 10 ⁻³ Pa), and a film formation rate of 18 nm / min. Vapor deposition on the bottom surface of the substrate. By this vapor deposition, Y, YH ₂ and Y ₂ O ₃ films are formed on the lower surface of the metal substrate. Furthermore, although not shown, the formed _{Y, Y} 2 _{O 3} film by baking 30 minutes at 300 to 800 ° C. The YH _2, Y _{2 O 3} film in a vacuum atmosphere is deposited. (Y is bonded to oxygen in the Y region, and hydrogen bonded to Y is desorbed and bonded to oxygen in the YH ₂ region). The thickness of the metal substrate is the same as described above and is 0.5 mm or less, and the thickness of the insulating film 31 is preferably in the range of about 200 to 600 nm.
As described above, when the Y ingot 7 containing hydrogen is deposited as a deposition source and then the metal substrate is oxidized to form a Y ₂ O ₃ film, the fabrication process is simplified compared to the first manufacturing method. It is preferable in that it can be performed.

  Then, the insulating film 31 formed by one of the above two methods is patterned by a photolithography technique in a state where the thin film heater 32 meanders as shown in FIG. 2B. The thin film heater 32 is formed by laminating a metal adhesion layer 33, a diffusion prevention layer 34, and a heating resistance layer 35 in order from the insulating film 31 side. The heat generating resistance layer 35 is a material having the lowest resistivity among the three layers (for example, Au). When a voltage is applied to the thin film heater 32, current flows intensively and generates heat. The diffusion prevention layer 34 is a material in which the material of the heat generation resistance layer 35 is not easily diffused into the diffusion prevention layer 34 even when the thin film heater 32 generates heat, and the material of the diffusion prevention layer 34 is difficult to thermally diffuse into the heat generation resistance layer 35. It is preferable to use a substance (for example, W) having a relatively high melting point and low reactivity. Further, the metal adhesion layer 33 is provided to prevent the diffusion prevention layer 34 from having low adhesion to the insulating film 31 and being easily peeled off, and to both the diffusion prevention layer 34 and the insulation film 31. It consists of material (for example, Ta, Mo, Ti, Cr) excellent in adhesiveness. The film thickness of the metal adhesion layer 33 is preferably 100 to 200 nm, the film thickness of the diffusion preventing layer 34 is 50 to 100 nm, and the film thickness of the heating resistor layer 35 is preferably 200 to 400 nm. The thin film heater 32 heats the microreactor 1 at the time of activation, and the electric resistance changes depending on the temperature. Specifically, a region where the temperature of the thin film heater 32 changes linearly with respect to the electric resistance is used.

  In the microreactor 1 having the above-described configuration, a voltage is applied to a lead wire (not shown) connected to the thin film heater 32 to cause the thin film heater 32 to generate heat, thereby heating the microreactor 1 and allowing the reactant to flow through the flow path 6. When the reactant is flowing through the flow path 6, the reactant reacts.

FIG. 5 shows a modification of the bottom plate 3A. FIG. 5 (a) is a top view when the frame bodies 4A and 4A are joined to the bottom plate 3A, and FIG. 5 (b) is a plan view of FIG. It is an arrow directional cross-sectional view at the time of cut | disconnecting along the cutting line VV of). As shown in FIG. 5 (a), an insulating film 31A is meandered on the upper surface of the bottom plate 3A except for the partition walls 5A, 5A,. In this way, the thin film heater may be arranged on the same side as the flow path, but in this case, an insulating protective layer is formed in order to ensure insulation from the catalyst as shown in FIG. 5 (b). The thin film heater 32A composed of four layers (metal adhesion layer 33A, diffusion prevention layer 34A, heat generation resistance layer 35A, diffusion prevention layer 36A) is patterned on the insulating film 31A in a meandering state, The insulating protective layer 37A is formed. The insulating protective layer 37A is preferably a Y ₂ O ₃ film, but may be a SiO ₂ film if the film is thin.

As described above, in the microreactor 1, the Y ₂ O ₃ film having the crystal structure (Bixbite structure) as the insulating film 31 is interposed between the lower surface of the bottom plate 3 and the thin film heater 32, and Y ₂ O ₃ Since the thermal expansion coefficient of the film is very close to that of metal, the difference in thermal expansion coefficient between the bottom plate 3 and the metal substrate can be reduced. As a result, it is possible to prevent the insulating film 31 from being cracked or peeled off easily when the metal substrate is distorted in an environment higher than room temperature, and the reliability of the insulating film 31 can be improved. In addition, when the insulating film 31 is formed, the Y ₂ O ₃ film can be formed without oxidizing the bottom plate 3 that is a metal substrate because the insulating film 31 is fired in an inert gas atmosphere.

[Second Embodiment]
FIG. 6 is a cross-sectional view taken along the arrow when the bottom plate 3B is cut along the cutting line II-II as in FIG.
Unlike the microreactor 1 of the first embodiment, the microreactor of the second embodiment has a two-layer structure in which the insulating films 31Ba and 31Bb are Y ₂ O ₃ films.
Specifically, as shown in FIG. 6, two layers of insulating films 31Ba and 31Bb having a crystal structure are formed on the entire bottom surface of the bottom plate 3B. The two insulating films 31Ba and 31Bb are both Y ₂ O ₃ films, on the first Y ₂ O ₃ film 31Ba and the first Y ₂ O ₃ film 31Ba formed directly on the lower surface of the bottom plate 3B. And the second Y ₂ O ₃ film 31Bb formed on the substrate. The crystal structure is the bixbite structure described above.

Here, four methods for manufacturing the first Y ₂ O ₃ film 31Ba and the second Y ₂ O ₃ film 31Bb will be described.
<Third production method>
The first Y ₂ O ₃ film 31Ba is formed by directly forming a Y ₂ O ₃ film on the lower surface of the metal substrate (bottom plate 3B) by vapor deposition, sputtering, ion plating, CVD, coating, or the like. Formed by.
As described above, the second Y ₂ O ₃ film 31Bb is formed by depositing a Y film on the first Y ₂ O ₃ film 31Ba by sputtering, and then forming the formed Y film with a hydrogen amount of 4% or less. The rest is an inert gas (Ar, Ne, N ₂ gas) atmosphere, and a YH ₂ film is formed by baking at a temperature of 300 to 400 ° C. for 15 minutes. Further, the YH ₂ film is formed in a vacuum atmosphere (1 × 10 6). ^-4 Pa), and can be formed by baking at 520 to 800 ° C. for 30 minutes. The method for forming the Y film is not limited to the sputtering method, but may be a vapor deposition method, a CVD method, an ion plating method, a coating method, or the like. The thickness of the metal substrate is 0.5 mm or less, and from the relationship with the substrate thickness, the film thickness 31Ba of the first Y ₂ O ₃ film and the film thickness of the second Y ₂ O ₃ film 31Bb are combined, A range of about 200 to 600 nm is preferable.

<Fourth manufacturing method>
This is to manufacture the two-layer structure of the Y ₂ O ₃ film in the reverse order in the third manufacturing method.
Similar to the second Y ₂ O ₃ film 31Bb in the third manufacturing method, the first Y ₂ O ₃ film 31Ba is formed on the surface of the metal substrate (bottom plate 3B) by sputtering, vapor deposition, CVD, ion plating. After the Y film is formed by a coating method, a coating method, etc., the temperature of the formed Y film is 300 to 400 ° C. in a hydrogen amount of 4% or less and the remainder in an inert gas (Ar, Ne, N ₂ gas) atmosphere. the YH ₂ film is formed by in performing the baking 15 minutes, further, the YH ₂ film under a vacuum atmosphere (1 × 10 ^-4 Pa), can be formed by baking 30 minutes at 520-800 ° C. .
Similar to the first Y ₂ O ₃ film 31Ba in the third manufacturing method, the second Y ₂ O ₃ film 31Bb is deposited on the first Y ₂ O ₃ film 31Ba formed by a vapor deposition method or a sputtering method. The Y ₂ O ₃ film is formed directly by an ion plating method, a CVD method, a coating method, or the like.

<Fifth manufacturing method>
As with the first Y ₂ O ₃ film 31Ba in the third manufacturing method, the first Y ₂ O ₃ film 31Ba is formed on the surface of the metal substrate (bottom plate 3B) by sputtering, vapor deposition, CVD, ion plating. A Y ₂ O ₃ film is formed directly by a coating method, a coating method, or the like.
The second Y ₂ O ₃ film 31Bb deposits a hydrogen-containing Y ingot as a deposition source on the first Y ₂ O ₃ film 31Ba formed. As described in the second manufacturing method in the first embodiment, the hydrogen-containing Y ingot is a Y ingot with an amount of hydrogen of 4% or less and the balance being an inert gas (Ar, Ne, N ₂ gas) atmosphere. In this, it is obtained by baking at a temperature of 300 to 400 ° C. for 1 hour. The deposition conditions are as follows: the temperature of the metal substrate is 280 ° C., the degree of vacuum during film formation is 3 to 5 (× 10 ⁻³ Pa), and the film formation rate is 18 nm / min. Then, the second Y ₂ O ₃ film 31Bb is formed by baking the Y, YH ₂ and Y ₂ O ₃ films formed by vapor deposition at 300 to 800 ° C. for 30 minutes in a vacuum atmosphere.

<Sixth manufacturing method>
This is to manufacture the two-layer structure of the Y ₂ O ₃ film in the reverse order in the fifth manufacturing method.
As with the second Y ₂ O ₃ film 31Bb of the fifth manufacturing method, the first Y ₂ O ₃ film 31Ba deposits a hydrogen-containing Y ingot as a deposition source on the surface of the metal substrate (bottom plate 3B). To do. Then, deposited by the formed _Y, the YH _2, Y _{2 O 3} film is baked for 30 minutes at 300 to 800 ° C. in a vacuum atmosphere by evaporation.
Second _Y 2 _{O 3} film 31Bb is directly over the first _Y 2 _{O 3} film 31Ba was deposited, a sputtering method, an evaporation method, CVD method, ion plating method, a coating method or the _{like, Y} 2 O It is formed by depositing _three films.

  As shown in FIG. 6, the two-layered insulating films 31Ba and 31Bb formed by any one of the four methods described above are patterned by a photolithographic technique in a state where the thin film heater 32B meanders. The thin film heater 32B is similar to the thin film heater 32 of the first embodiment, and is formed by laminating a metal adhesion layer 33B, a diffusion prevention layer 34B, and a heating resistance layer 35B in this order from the insulating films 31Ba and 31Bb side.

As described above, when the insulating films 31Ba and 31Bb have a two-layer structure, pinholes in the first Y ₂ O ₃ film 31Ba can be reduced by the second Y ₂ O ₃ film 31Bb, and reliability is improved. High insulating films 31Ba and 31Bb can be obtained.
In addition, by producing the first Y ₂ O ₃ film 31Ba and the second Y ₂ O ₃ film 31Bb by different methods, the warpage occurring in the film production stage is suppressed as will be apparent from Example 1 described later. can do. That is, as in the third manufacturing method described above, after the film formation by sputtering Y ₂ O ₃ film on the metal substrate, when firing in order to increase the crystallite size, the Y ₂ O ₃ film immediately after the film formation In comparison, the distance between atoms is shortened and the film contracts. Therefore, the metal substrate is pulled by the film, and the metal substrate becomes convex downward. When the metal substrate is distorted in this way, for example, when joining with another metal member, the contact area is reduced, so that the joining cannot be performed, which adversely affects other processes. Therefore, by forming the second Y ₂ O ₃ film 31Bb on the metal substrate on which the first Y ₂ O ₃ film 31Ba is formed and warped downward, the first Y ₂ O ₃ film 31Ba is formed as described above. Since the crystalline Y ₂ O ₃ film is formed by taking in oxygen as compared to immediately after the Y ₂ O ₃ film 31Ba is formed, the film is extended by that amount, and is warped upward. It will be. As described above, since the warp of the metal substrate in film production differs between the first Y ₂ O ₃ film 31Ba and the second Y ₂ O ₃ film 31Bb, by combining Y ₂ O ₃ films by different methods. The warp of the metal substrate can be offset.

[Application Example 1]
Next, a microreactor module 100 will be described as an application example of the reaction apparatus according to the present invention.
7 is a perspective view showing the microreactor module 100 obliquely from below, FIG. 8 is an exploded perspective view of the microreactor module 100, FIG. 9 is a schematic side view when the microreactor module 100 is divided for each function, and FIG. 1 is a block diagram including a power generation system 500 including a microreactor module 100 and a power generation cell (fuel cell) 160, and an electronic device main body 600. FIG.
The microreactor module 100 includes a base plate 101, a lower frame 102, a middle frame 103, a combustor plate 104, an upper frame 105, a lid plate 106, a high temperature reaction unit 107, a base plate 111, a lower frame 112, a middle frame 113, A low-temperature reaction part 117 in which the upper frame 115 and the lid plate 116 are laminated, a connecting pipe 121 laid between the high-temperature reaction part 107 and the low-temperature reaction part 117, a multi-tube member 122 connected to the lower surface of the low-temperature reaction part 117, The three combustor plates 123 stacked around the multi-pipe 122, the heating wire (thin film heater) 124 patterned on the lower surface of the low temperature reaction part 117, the connecting pipe 121, the high temperature reaction part from the low temperature reaction part 117 The heating wire (thin film heater) 125 patterned on the lower surface extending to 107 and the low-temperature reaction part 11 Comprising a from the lower surface of the combustor is patterned over the outer surface of the plate 123 the heating wire (thin film heater) 126.
Further, the entire surface between the patterned heating wire 124 and the lower surface of the low temperature reaction unit 117 (base plate 111) and between the patterned heating wire 125 and the lower surface of the high temperature reaction unit 107 (base plate 101), respectively. An insulating film 131 is formed over the entire area. The insulating film 131 is a Y ₂ O ₃ film having a bixbite structure formed by the first manufacturing method in the same manner as the single-layer insulating film 31 in the first embodiment described above. The thickness of the insulating film 131 is preferably in the range of about 200 to 600 nm.
The insulating film 131 may be a Y ₂ O ₃ film formed by the second manufacturing method in the first embodiment. Further, as in the second embodiment, an insulating film having a two-layer structure including a first Y ₂ O ₃ film 31Ba and a second Y ₂ O ₃ film 31Bb may be used. In this case, it can form into a film by the 3rd-6th manufacturing method in 2nd embodiment, respectively.

The three combustor plates 123 are plates having recesses provided with ribs for partitioning the side wall and the flow path on the outer peripheral portion, a through hole is formed in the center portion, and the multi-pipe material 122 is fitted into the through hole. The combustor plate 123 is laminated around the multi-pipe material 122 by bonding, and the uppermost combustor plate 123 is bonded to the lower surface of the low-temperature reaction unit 117, thereby forming a flow path in these bonding surfaces. The first combustor 141 (FIG. 9) is configured by the three combustor plates 123. Air and gaseous fuel (for example, hydrogen gas, methanol gas, etc.) are supplied to the first combustor 141 separately or as an air-fuel mixture through the multi-pipe material 122 and applied in the flow path between the fuel plate 123. Catalytic combustion occurs with the catalyst.
In addition, water and liquid fuel (for example, methanol, ethanol, dimethyl ether, butane, gasoline) are supplied from the fuel container to the multi-pipe material 122 separately or in a mixed state, and are generated by combustion heat in the first combustor 141. A vaporizer 142 (FIG. 9) that vaporizes water and liquid fuel is configured. The vaporized fuel / water mixture is sent to the inside of the lower part of the high temperature reaction unit 107 through the flow path of the base plate 111 and the connecting pipe 121.
The lower part of the high temperature reaction unit 107 is a laminate of the base plate 101, the lower frame 102, and the middle frame 103, and a flow path is formed inside these laminates, whereby the first reformer 143 (FIG. 6) is formed. Composed. The vaporized gas mixture flows through the flow path of the first reformer 143, and hydrogen or the like is generated by a catalytic reaction. When the liquid fuel in the gas mixture is methanol, the reaction is represented by the following formula (1). Furthermore, carbon monoxide, which is a by-product, is produced by a reaction such as the following formula (2), although the amount is small.
CH ₃ OH + H ₂ O → 3H ₂ + CO ₂ (1)
H ₂ + CO ₂ → H ₂ O + CO (2)

  Heat is required for this catalytic reaction, but heat energy is supplied by the heating wire 125 or the combustor plate 104. The combustor plate 104 is a plate having a concave portion provided with ribs that partition the side wall and the flow path on the outer peripheral portion. Here, when the combustor plate 104 is joined to the upper frame 105, a combustion chamber is formed in the joining surface, thereby forming the second combustor 144 (FIG. 9). A mixture of gaseous fuel (for example, hydrogen gas, methanol gas, etc.) and air is supplied to the combustion chamber (second combustor 144 (FIG. 9)) through the multi-pipe 122, the flow path of the base plate 111, and the connecting pipe 121. Catalytic combustion occurs in the combustion chamber. The high temperature reaction part 107 is heated to about 280-400 degreeC by the 2nd combustor 144 (FIG. 9).

  The air-fuel mixture is further sent to the inside of the upper frame 105 from the laminated body of the base plate 101, the lower frame 102, and the middle frame 103. A plurality of partition walls are provided inside the upper frame 105, and a flow path is formed inside the upper frame 106 by closing the upper opening of the upper frame 105 by the lid plate 106, thereby the second reformer 145. (FIG. 9) is configured. The air-fuel mixture sent to the inside of the upper frame 106 flows through the flow path inside the upper frame 106, hydrogen and the like are generated by a catalytic reaction, and carbon monoxide, which is a by-product, is generated in a small amount (the above formula) (See (1) and (2)). Then, an air-fuel mixture containing hydrogen and the like is sent to the inside of the low temperature reaction section through the connecting pipe 121.

The low-temperature reaction unit 117 is formed by laminating the base plate 111, the lower frame 112, the middle frame 113, the upper frame 115, and the lid plate 116, and a flow path is formed inside these laminated bodies, thereby removing carbon monoxide. A device 146 (FIG. 9) is constructed. The air-fuel mixture flows through the flow path of the carbon monoxide remover 146, and the carbon monoxide generated by the above equation (2) in the air-fuel mixture is selectively oxidized as the following equation (3).
2CO + O ₂ → 2CO ₂ (3)
Since the selective oxidation reaction of carbon monoxide occurs at a temperature higher than room temperature (about 100 to 180 ° C.), the low temperature reaction section 117 is heated by the heating wire 124 and the combustor plate 123. The hydrogen rich gas from which carbon monoxide has been removed by the low temperature reaction unit 117 is supplied to the fuel electrode of the power generation cell 160 through the multi-pipe material 122. In the power generation cell 160, air is supplied to the oxygen electrode, and electric energy is generated by an electrochemical reaction between oxygen and hydrogen.
As illustrated in FIG. 10, the power generation system 500 includes a DC / DC converter 171 that converts electrical energy generated by the power generation cell 160 into an appropriate voltage, and a secondary battery 172 that is connected to the DC / DC converter 171. And a control unit 173 for controlling them.
The DC / DC converter 171 converts the electric energy generated by the power generation cell 160 into an appropriate voltage and then supplies the electric energy generated by the power generation cell 160 to the secondary battery 172. When the fuel cell 7 is not in operation, the electronic device main body 600 can also function to supply electric energy from the secondary battery 172 side. The controller 173 includes a vaporizer 142, first and second reformers 143 and 145, a carbon monoxide remover 146, a second combustor 144, pumps and valves (not shown) necessary for operating the power generation cell 160, and Then, the heaters, the DC / DC converter 171 and the like are controlled so that the electric energy is stably supplied to the electronic device main body 600.

  Although the high temperature reaction part 107, the low temperature reaction part 117, and the connecting pipe 121 are accommodated in the heat insulation package (not shown), since the inside of the heat insulation package is made into a vacuum pressure, the heat insulation effect is high. Further, a getter material 132 is provided in the heat insulation package. When a voltage is applied to the heater of the getter material 132 through the lead wires 151 and 152 and the wiring 133, the getter material 132 is activated and the degree of vacuum in the heat insulation package is increased. . In addition to the lead wires 151 and 152, some lead wires are provided. The lead wires 153 and 154 are connected to the heating wire 124, the lead wires 155 and 156 are connected to the heating wire 125, and the lead wire 157 is connected. , 158 are connected to the heating wire 126.

As described above, in the microreactor module 100, a Y ₂ O ₃ film (insulating film) having a crystal structure (Bixbite structure) between the lower surface of the base plates 101 and 111 and the heating wires 124 and 125 provided on the lower surface. 131), the thermal expansion coefficient is very close to that of a metal in an environment higher than room temperature. Therefore, cracking and peeling of the insulating film 131 due to distortion of the base plates 101 and 111 can be prevented, and the reliability as the insulating film can be prevented. Can be increased.
In addition, since the insulating film 131 is baked in an inert gas atmosphere, the Y ₂ O ₃ film can be formed without oxidizing the base plates 101 and 111 which are metal substrates.
Further, when the insulating film 131 has a two-layer structure, pinholes in the lower layer film can be reduced and a highly reliable insulating film can be provided. In addition, the film can be formed by a method different from that for the upper layer and the lower layer. By manufacturing, the warp generated in the film manufacturing stage can be suppressed.

[Application 2]
Although the application example 1 mentioned above assumed the chemical reactor for performing hydrogen production, not only this but high temperature operation | movement like a solid oxide type power generation cell (fuel cell) including a reformer etc. An insulating film made of a Y ₂ O ₃ film having a crystal structure (Bixbite structure) can also be used for a device (600 to 900 ° C.). FIG. 11 is a schematic cross-sectional view of a solid oxide power generation cell 200.
The power generation cell 200 includes a metal container 210 having a box shape, a membrane electrode assembly 220 provided in the metal container 210, and the inside of the metal container 210 is partitioned by the membrane electrode assembly 220. The fuel intake part 211 and the oxygen intake part 212 are provided respectively on the upper side and the lower side.
The metal container 210 is made of an alloy such as Ni, Ni—Cr alloy, or Inconel having good heat resistance. The membrane electrode assembly 220 includes a fuel electrode membrane 221, a solid oxide electrolyte membrane 222, and an oxygen electrode membrane 223. The fuel electrode membrane 221 in the metal container 210 is disposed on the fuel intake portion 211 side. 223 is arranged on the oxygen uptake unit 212 side in the metal container 210. The solid oxide electrolyte membrane 222 is interposed between the fuel electrode membrane 221 and the oxygen electrode membrane 223, and the fuel electrode membrane 221, the solid oxide electrolyte membrane 222, and the oxygen electrode membrane 223 are joined. A current collector 224 on the anode side is provided on the surface of the fuel electrode membrane 221 opposite to the solid oxide electrolyte membrane 222, and a cathode on the surface of the oxygen electrode membrane 223 opposite to the solid oxide electrolyte membrane 222. A side current collector 225 is provided. A Y ₂ O ₃ film 231 that is an insulating film is formed on the inner surface of the metal container 210. The insulating film 231 is a Y ₂ O ₃ film having a crystal structure (Bixbite structure) formed by sputtering as with the insulating film 31 described above. The film forming method is not limited to the sputtering method, but may be a vapor deposition method, a CVD method, an ion plating method, a coating method, or the like.
The fuel electrode membrane 221, the solid oxide electrolyte membrane 222, the oxygen electrode membrane 223, and the two current collectors 224 and 225 are all in the metal container 210 so as to be parallel to the upper and lower surfaces of the metal container 210. Between the insulating films 231 and 231 formed on the inner surfaces facing each other.

The solid oxide electrolyte membrane 222 has a role of transporting oxygen ions from the oxygen electrode membrane 223 to the fuel electrode membrane 221 and has a property of transmitting oxygen ions. The solid oxide electrolyte membrane 222 is made of YSZ (yttria stabilized zirconia) that is stable in an oxidation-reduction atmosphere.
In the oxygen electrode film 223, oxygen in the introduced air is adsorbed and dissociated on the electrode and combined with electrons in the reaction field to generate oxygen ions. Therefore, for example, La _1-x Sr _x MnO _{3 which} is a porous material stable in an oxidizing atmosphere and has good electron conductivity is used.
In the fuel electrode membrane 221, hydrogen introduced reacts with oxygen ions to generate water vapor and electrons. Therefore, for example, Ni / YSZ (cermet) is used which is a porous material that is stable in a reducing atmosphere, has good affinity with hydrogen, and has high electron conductivity.
Since the current collectors 224 and 225 serve as a current collector plate, for example, a Ni—Cr alloy or a Fe—Cr alloy having high electron conductivity and low ion conductivity is used.

On the outer surface of the metal container 210, a fuel supply pipe 241 connected to the reformer and taking in the fuel (H ₂ ) generated by the reformer into the fuel take-in part 211, and an unreacted that has not been used for power generation A fuel discharge pipe 242 that discharges fuel (H ₂ ) is provided through the outer surface. Further, an oxygen supply pipe 243 for taking oxygen into the oxygen take-in section 212 and an oxygen discharge pipe 244 for discharging unreacted oxygen that has not been used for power generation are provided on the outer face of the metal container 210 so as to penetrate the outer face. It has been.

An insulating film 232 is formed on the entire upper surface of the metal container 210. The insulating film 232 is a Y ₂ O ₃ film having a bixbite structure formed by the first manufacturing method in the same manner as the single-layer insulating film 31 in the first embodiment described above. The thickness of the insulating film 231 is preferably in the range of about 200 to 600 nm.
The insulating film 231 may be a Y ₂ O ₃ film formed by the second manufacturing method in the first embodiment. Further, as in the second embodiment, an insulating film having a two-layer structure including a first Y ₂ O ₃ film 31Ba and a second Y ₂ O ₃ film 31Bb may be used. In this case, it can form into a film by the 3rd-6th manufacturing method in 2nd embodiment, respectively.
On the insulating film 232, the thin film heater 233 is patterned in a meandering manner by a photolithography technique. The thin film heater 233 is formed by laminating a metal adhesion layer (for example, Ta, Mo, Ti, Cr), a diffusion prevention layer (for example, W), and a heating resistance layer (for example, Au) in this order from the insulating film 232 side. . The thickness of the metal adhesion layer is preferably 100 to 200 nm, the thickness of the diffusion preventing layer is preferably 50 to 100 nm, and the thickness of the heating resistor layer is preferably 200 to 400 nm. The thin film heater 233 heats the metal container 210 at the time of activation, and the electric resistance changes depending on the temperature. Therefore, the thin film heater 233 also functions as a temperature sensor that reads a change in temperature from a change in resistance value. Specifically, a region where the temperature of the thin film heater 233 changes linearly with respect to the electrical resistance is used.

  In the power generation cell 200 having the above-described configuration, a voltage is applied to a lead wire (not shown) connected to the thin film heater 233 to cause the thin film heater 233 to generate heat, whereby the metal container 210 is heated to about 700 ° C. to 1000 ° C. In a heated state, hydrogen is supplied from the fuel supply pipe 241 to the fuel intake section 211, and hydrogen that has not been used for the electrochemical reaction in the membrane electrode assembly 220 is discharged from the fuel discharge pipe 242. On the other hand, oxygen-containing air is supplied from the oxygen supply pipe 243 to the oxygen intake section 212, and oxygen is ionized by the oxygen electrode film 223 and passes through the solid oxide electrolyte membrane 222. Oxygen that has not been used for the electrochemical reaction in the membrane electrode assembly 220 is exhausted from the oxygen exhaust pipe 244. Oxygen ions that have permeated through the solid oxide electrolyte membrane 222 react with hydrogen at the fuel electrode membrane 221, and water is generated in the fuel intake portion 211. Electrons generated at this time are conducted from the current collector 225 on the cathode side through the external circuit to the anode current collector 224 through the wiring. The generated water is in the state of water vapor and is discharged from the fuel discharge pipe 242. Thus, electric energy is generated as oxygen ions move.

[Application Example 3]
FIG. 12 is a schematic cross-sectional view of another power generation cell 300 of the solid oxide type.
A power generation cell 300 shown in FIG. 12 uses two metal substrates 311 and 312 instead of using the metal container 210 as in the power generation cell 200 described above. Specifically, the power generation cell 300 includes two metal substrates 311 and 312 that are vertically opposed to each other, and is parallel to both metal substrates 311 and 312 between the two metal substrates 311 and 312. The membrane electrode assembly 320, the support portions 313 and 314 that fix the membrane electrode assembly 320 to the metal substrates 311 and 312, and the membrane electrode assembly 320 are separated from the lower side. A fuel intake portion 315 formed between the metal substrate 311 and an oxygen intake portion 316 formed between the membrane electrode assembly 320 and the upper metal substrate 312.
A support column 313 is formed in a frame shape on the periphery of the upper surface of the lower metal substrate 311, and a support column 314 is installed on the periphery of the lower surface of the upper metal substrate 312. Is formed in a frame shape. These support | pillar parts 313,314 are formed from insulating materials, such as a ceramic.

  The membrane electrode assembly 320 is sandwiched between the lower support column portions 313 and 313 and the upper support column portions 314 and 314, whereby the lower metal substrate 311 and the membrane electrode assembly 320 are connected between the upper side and the upper side. A space is formed between the metal substrate 312 and the membrane electrode assembly 320. The membrane electrode assembly 320 includes a fuel electrode membrane 321, a solid oxide electrolyte membrane 322, and an oxygen electrode membrane 323. The fuel electrode membrane 321 is arranged facing the fuel intake portion 315 side. It is arranged facing the oxygen uptake unit 316 side. The solid oxide electrolyte membrane 322 is interposed between the fuel electrode membrane 321 and the oxygen electrode membrane 323, and the fuel electrode membrane 321, the solid oxide electrolyte membrane 322, and the oxygen electrode membrane 323 are joined. A current collector 324 on the anode side is provided on the surface of the fuel electrode membrane 321 opposite to the solid oxide electrolyte membrane 322, and a cathode is provided on the surface of the oxygen electrode membrane 323 opposite to the solid oxide electrolyte membrane 322. A side current collector 325 is provided. The fuel electrode membrane 321, the solid oxide electrolyte membrane 322, the oxygen electrode membrane 323, and the two current collectors 324 and 325 are arranged on both the left and right sides so as to be parallel to the two metal substrates 311 and 312. It is provided across the support columns 313, 313, 314, 314.

Since the solid oxide electrolyte membrane 322, the fuel electrode membrane 321 and the oxygen electrode membrane 323 are the same as those described above, the description thereof is omitted.
A fuel supply pipe 341 that is connected to the reformer and takes in the fuel (H ₂ ) generated by the reformer into the fuel take-in portion 315 is not used for power generation on the outer surface of the lower support column 313. A fuel discharge pipe 342 for discharging unreacted fuel (H ₂ ) is provided through the outer surface. Further, an oxygen supply pipe 343 that takes oxygen into the oxygen take-in section 316 and an oxygen discharge pipe 344 that discharges unreacted oxygen that has not been used for power generation penetrate the outer face of the upper support column 314 through the outer face. Is provided.

An insulating film 332 is formed on the entire upper surface of the upper metal substrate 312. The insulating film 332 is a Y ₂ O ₃ film having a bixbite structure formed by the first manufacturing method in the same manner as the one-layer insulating film 31 in the first embodiment described above. The thickness of the insulating film 332 is preferably in the range of about 200 to 600 nm.
The insulating film 332 may be a Y ₂ O ₃ film formed by the second manufacturing method in the first embodiment. Further, as in the second embodiment, an insulating film having a two-layer structure including a first Y ₂ O ₃ film 31Ba and a second Y ₂ O ₃ film 31Bb may be used. In this case, it can form into a film by the 3rd-6th manufacturing method in 2nd embodiment, respectively.
On the insulating film 332, the thin film heater 333 is patterned in a meandering manner by a photolithography technique. The thin film heater 333 is formed by laminating a metal adhesion layer (for example, Ta, Mo, Ti, Cr), a diffusion prevention layer (for example, W), and a heating resistance layer (for example, Au) in this order from the insulating film 332 side. . The thickness of the metal adhesion layer is preferably 100 to 200 nm, the thickness of the diffusion preventing layer is preferably 50 to 100 nm, and the thickness of the heating resistor layer is preferably 200 to 400 nm. The thin film heater 333 functions as a temperature sensor that reads a change in temperature from a change in resistance value because the electric resistance changes depending on the temperature by heating the metal container at the time of activation. Specifically, a region where the temperature of the thin film heater 333 changes linearly with respect to the electric resistance is used.

  Also in the power generation cell 300 having the above-described configuration, a voltage is applied to the lead wire connected to the thin film heater 333 to generate heat, and the casing made of the metal substrates 311, 312, etc. is heated to 600 to 900 ° C. Hydrogen is supplied to the fuel intake unit 315 from the fuel supply pipe 341 in a state of being heated to an extent, and hydrogen that has not been used for the electrochemical reaction in the membrane electrode assembly 320 is discharged from the fuel discharge pipe 342. On the other hand, air containing oxygen is supplied from the oxygen supply pipe 343 to the oxygen uptake unit 316, and oxygen is ionized by the oxygen electrode film 323 and passes through the solid oxide electrolyte membrane 322. Unreacted oxygen that has not been used for the electrochemical reaction in the membrane electrode assembly 320 is discharged from the oxygen discharge pipe 344. Oxygen ions that have permeated the solid oxide electrolyte membrane 322 react with hydrogen in the fuel electrode membrane 321, and water is generated in the fuel intake portion 315. Electrons generated at this time are conducted from the current collector 325 on the cathode side through the external circuit to the anode current collector 324 through the wiring. The generated water is in the state of water vapor and is discharged from the fuel discharge pipe 342. Thus, electric energy is generated as oxygen ions move.

As described above, in the solid oxide type power generation cells 200 and 300 shown in FIG. 11 and FIG. 12, between the upper surfaces of the metal container 210 and the metal substrate 312 and the thin film heaters 233 and 333 provided on the upper surface. Since the Y ₂ O ₃ film (insulating films 232 and 332) having a crystal structure (Bixbite structure) is provided, the thermal expansion coefficient is very close to that of the metal even when the operating temperature is as high as 600 to 900 ° C. In addition, it is possible to prevent cracking and peeling of the insulating films 232 and 332 due to distortion of the metal container 210 and the metal substrate 312 and to have excellent performance as a withstand voltage.
In addition, since the insulating films 232 and 332 are formed by baking in an inert gas atmosphere, the Y ₂ O ₃ film can be formed without oxidizing the metal container 210 and the metal substrate 312.
Furthermore, when the insulating films 232 and 332 have a two-layer structure, pinholes in the lower layer film can be reduced, and a highly reliable insulating film can be provided. By producing the film, warpage occurring in the film production stage can be suppressed.
Although the example in which the power generation cell is a solid oxide type is described here, another power generation cell such as a molten carbonate type may be used.

[Example 1]
Next, the Y ₂ O ₃ film formed by the first manufacturing method in the first embodiment crystallizes, and the first Y ₂ O ₃ by the third manufacturing method in the second embodiment. The following example is used to explain that the warpage of the metal substrate is suppressed by adopting the two-layer structure of the film and the second Y ₂ O ₃ film.
≪X-ray diffraction measurement≫
A Y film (360 nm) was formed on a Si substrate with a thermal oxide film by sputtering. The sputtering conditions were as follows: target material: Y, ultimate pressure: 5 × 10 ⁻⁴ Pa, Ar flow rate: 20 sccm, sputtering pressure: 0.1 Pa, sputtering power: 500 W. Then, the formed Y film was baked for 15 minutes at a temperature of 350 ° C. in an atmosphere of hydrogen gas (3%) and the balance Ar gas, to form a YH ₂ film, and X-ray diffraction measurement was performed.
YH ₂ films are reported to have a fluorite structure. FIG. 13 shows the result of X-ray diffraction measurement of the YH ₂ film immediately after film formation, and indexing is performed as a fluorite type. Since the target is a thin film, it can be easily understood that a crystalline YH ₂ film is produced although there is a diffraction peak that is not observed and is easily observed. In particular, significant diffraction peaks were observed on the (111) plane, (311) plane, and (420) plane.
Next, after the YH ₂ film is formed, the Y ₂ O ₃ film is formed by baking in a vacuum at 700 ° C. for 30 minutes, and the X-ray diffraction measurement is performed is shown in FIG.
The Y ₂ O ₃ film is a crystal having a bixbite structure as described above. The bixbite structure is a modified fluorite structure and is similarly indexed. It is reported that the unit cell takes twice as long as the fluorite structure. Therefore, the (111) plane, (311) plane, and (420) plane, which are remarkably observed in the YH ₂ film, correspond to the (222) plane, the (622) plane, and the (840) plane. As shown in FIG. 14, the peak intensity hitting these surfaces is somewhat large, and it can be said that the Y ₂ O ₃ film drags the orientation of the YH ₂ film. In addition to Y ₂ O ₃ , a peak corresponding to YO _1.335 is also observed.

≪Warpage of the board≫
Next, a Y ₂ O ₃ film (300 nm) formed on a 4-inch, 0.5 mm Ni substrate by sputtering and then fired at 800 ° C. for 30 minutes in an Ar atmosphere, resulting in film formation. The warpage of was measured. The measurement results are shown in FIG. As shown in FIG. 15, the warpage of the substrate was 45 μm downward.
A Y film (200 nm) is formed on the Y ₂ O ₃ film formed on the Ni substrate by sputtering, and then heated to 350 ° C. in an Ar and 3% hydrogen atmosphere in 15 minutes. A YH ₂ film is formed by holding for a minute, and further, heated to 700 ° C. for 70 minutes in a vacuum atmosphere (10 ⁻³ to 10 ⁻⁴ Pa), and held for 30 minutes to form a Y ₂ O ₃ film. did. The warpage at that time was measured, and the measurement results are shown in FIG. As shown in FIG. 16, the warpage of the substrate was upward convex of 80 μm. As described above, by forming the Y ₂ O ₃ film in a two-layer structure, the warp that is convex downward on the substrate when only one layer of the Y ₂ O ₃ film is formed is conversely convex upward. It can be seen that it can be warped. In addition, it is thought that the reverse curvature which becomes convex upwards can be suppressed by making a Y film | membrane thinner further.

[Example 2]
Next, the crystallization of the Y ₂ O ₃ film formed by the fourth manufacturing method in the first embodiment will be described with reference to the following examples.
≪X-ray diffraction measurement≫
A film was formed on a Ni substrate using a hydrogen-containing Y ingot as a vapor deposition source by vapor deposition. The deposition conditions are as follows. If the deposition source Y does not contain hydrogen, the amount of hydrogen does not exceed the explosion limit of 4%, and the remainder is in an inert gas (Ar, Ne, N ₂ gas) atmosphere. The ingot is baked at 300 to 400 ° C. for 1 hour, and the substrate temperature is 280 ° C., the degree of vacuum during film formation is 3 to 5 (× 10 ⁻³ Pa), and the film formation rate is 18 nm / min. . And the X-ray-diffraction measurement regarding the obtained sample was performed. FIG. 17 is a result of X-ray diffraction measurement of a sample immediately after film formation (the upper right inset is an enlarged view of 2θ: 25 ° to 35 °). YH ₂ having a fluorite structure and Y having a bixbite structure A diffraction pattern of ₂ O ₃ and Ni as a substrate was observed. As described above, it can be understood that a film containing YH ₂ is formed under the influence of a trace amount of hydrogen contained in the Y ingot as a deposition source. In addition, the fact that the diffraction pattern of Y ₂ O ₃ is observed without observing the diffraction pattern of Y understands that a trace amount of oxygen during film formation has already been taken in due to the influence of hydrogen during film formation. it can.
FIG. 18 is an X-ray diffraction result of a sample obtained by baking the sample of FIG. 17 at 700 ° C. in a vacuum (1 × 10 ⁻⁴ Pa) atmosphere. As shown in FIG. 18, in addition to the diffraction patterns of Y ₂ O ₃ and Ni, a diffraction pattern of Ni ₅ Y due to the diffusion of Y and Ni was observed at the interface between the film and the substrate. The diffraction pattern of YH ₂ observed in FIG. 17 is not observed, and it can be said that the film is a clean Y ₂ O ₃ film from which hydrogen has been eliminated. Further, the diffraction peak of Y ₂ O ₃ is a peak having a narrow half-value width as compared with FIG. 17, and it can be understood that the crystallite size is larger. Since Y is a metal that is easily oxidized, it is a material that is difficult to handle. However, when the target material is an oxide in this way, it is preferable because it does not cause a problem.

In the present invention, Y ₂ O ₃ has been described so far as an oxide that can be easily crystallized and has a high withstand voltage. Since Y has properties similar to other rare earths, other rare earth oxides (R ₂ O ₃ : R is a rare earth element) are also expected to be promising materials (see FIG. 21).
Each R ₂ O ₃ has a linear expansion coefficient of 7 to 10 (× 10 ⁻⁶ / ° C.), which is close to that of metal. In addition, since the melting point is sufficiently high, it can withstand even in a high temperature environment (see FIG. 22).
As described above, as the interlayer insulating film provided on the metal substrate, not only the Y ₂ O ₃ film but also other rare earth oxides (R ₂ O ₃ : R is a rare earth element) can be easily crystallized. Expected to be good. However, among these two properties, rare earth oxides having withstand voltage resistance are limited to some extent, and Y ₂ O ₃ has good insulating properties because Y oxide is the only trioxide (however, This is because the oxides of other compositions do not exist (or are unlikely to exist) except under extremely special conditions.
When other oxides are present, for example, EuO and Eu ₂ O ₃ are present in the case of Eu oxides. Of these, EuO is a semiconductor, Eu ₂ O ₃ is an insulator, the former being Eu ²⁺ , and the latter being Eu ³⁺ . When two or more kinds of oxides are present, Eu ₂ O ₃ is not only Eu ³⁺ but also Eu ²⁺ , so that it has oxygen deficiency and tends to be Eu ₂ O _{3 -X} . Such oxygen deficiency, that is, a state in which different valences are mixed brings about a decrease in withstand voltage or electrical (or ionic) conductivity.
Therefore, a material suitable as an insulating film is an oxide having only a typical oxide, trioxide (R ₂ O ₃ ). Therefore, as the insulating film, Sc ₂ O ₃ , Y ₂ O ₃ , La ₂ O ₃ , Gd ₂ O ₃ , Dy ₂ O ₃ , Ho ₂ O ₃ , Er ₂ O ₃ 3, Tm ₂ O ₃ , Lu _{2 are used.} Limited to O ₃ . Oxides composed of rare earth elements other than the above are excluded because they can take a plurality of oxides such as RO and RO ₂ and the crystal structure changes in the operating temperature range. In addition, since rare earth elements have similar chemical properties and are easily dissolved, R ₂ O ₃ is composed of Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu. The case where it contains 2 or more may be sufficient.
Rare earth oxides can be classified into three types, A type (hexagonal), B type (monoclinic), and C type (cubic, bixbite structure) according to crystal structure. Y ₂ O ₃ described so far is room temperature. This corresponds to the C type (Bixbyte structure). Of the three crystal structures, the C type (Bixbitite structure) has a wider stable region than the A type (hexagonal) and B type (monoclinic), and Sc ₂ O ₃ and Y ₂ corresponding to the C type. O ₃ , Gd ₂ O ₃ , Dy ₂ O ₃ , Ho ₂ O ₃ , Er ₂ O ₃ , Tm ₂ O ₃ , and Lu ₂ O ₃ are easy to produce a film having a crystal structure and are particularly suitable in the present invention. It can be said.

1 is an exploded perspective view of a microreactor 1. FIG. (a) is a bottom view of the bottom plate 3, and (b) is a cross-sectional view taken along the line II-II in (a). In the first production method, the hydrogen partial pressure value in the furnace was plotted against time when the temperature was raised to 700 ° C. at a rate of 10 ° C./min in vacuum and held at 700 ° C. for 30 minutes. is there It is a figure for demonstrating the vapor deposition method in a 2nd manufacturing method. It is a modified example of the bottom plate 3A, (a) is a top view when the frames 4A, 4A are joined to the bottom plate 3A, and (b) is a view when cut along the cutting line V-V of (a). It is arrow sectional drawing. It is arrow sectional drawing at the time of cut | disconnecting the baseplate 3B along the cutting line II-II. It is the perspective view which showed the micro reactor module 100 from diagonally downward. 1 is an exploded perspective view of a microreactor module 100. FIG. It is a schematic side view at the time of dividing the micro reactor module 100 for every function. 1 is a block diagram including a power generation system 500 including a microreactor module 100 and a power generation cell 160, and an electronic device main body 600. FIG. 2 is a schematic cross-sectional view of a solid oxide power generation cell 200. FIG. It is a schematic sectional drawing of another power generation cell 300 of a solid oxide type. At the first manufacturing method, a YH ₂ film results of X-ray diffraction measurement immediately after the film formation. After forming the YH ₂ film, it is a result of X-ray diffraction measurement of the _Y 2 _{O 3} film formed by baking 30 minutes at 700 ° C. in vacuo. In Example 1, the results of measuring the warpage of the substrate obtained by depositing a layer of Y ₂ O ₃ film on the substrate. In Example 1, the results of measuring the warpage of the substrate obtained by depositing a Y ₂ O ₃ film of two layers on the substrate. It is a result of the X-ray-diffraction measurement of the sample immediately after film-forming in the 4th manufacturing method of Example 2. FIG. 18 is an X-ray diffraction result when firing was performed on the sample of FIG. 17 in Example 2. FIG. 4A and 4B show a conventional example, in which FIG. 4A is a plan view of the substrate 400, and FIG. 4B is a cross-sectional view taken along the cutting line XIX-XIX in FIG. It is a table | surface of a linear expansion coefficient. It is a list of rare earth elements and rare earth oxides made therefrom. 3 is a list of melting points and crystal structures of rare earth oxides.

Explanation of symbols

1 Microreactor 2 Top plate 3, 3A, 3B Bottom plate 7 Ingot 31, 31A, 131, 231, 232, 332 Insulating film 31Ba First Y ₂ O ₃ film (first R ₂ O ₃ film, insulating film)
31Bb second Y ₂ O ₃ film (second R ₂ O ₃ film, insulating film)
32, 32A, 32B, 233, 333, 405 Thin film heater 33, 33A, 33B Metal adhesion layer 34, 34A, 34B, 36A, 402 Diffusion prevention layer 35, 35A, 35B, 403 Heat resistance layer 37A, 406 Insulation protective layer 100 Microreactor module 101, 111 Base plate 124, 125, 126 Heating wire (thin film heater)
141 first combustor 142 vaporizer 143 first reformer 144 second reformer 145 second reformer 146 carbon monoxide remover 160 power generation cell (fuel cell)
200,300 Solid oxide power generation cell (fuel cell)
210 Metal container 311, 312 Metal substrate 500 Power generation system 600 Electronic device main body

Claims (10)

Vapor deposition process for performing vapor deposition on the surface of the metal substrate using a vapor deposition source composed of at least one rare earth element R selected from Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu, and hydrogen. When,
An oxidation step of oxidizing the metal substrate after vapor deposition into an R ₂ O ₃ film ;
A method of manufacturing an insulating film, comprising: Forming a first R ₂ O ₃ film containing a rare earth element R of Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu on the surface of the metal substrate;
On the first R ₂ O ₃ film, a deposition step for depositing using a deposition source consisting of one rare earth element R and hydrogen even without low, the oxidation step of oxidizing the metal substrate after deposition Forming a second R ₂ O ₃ film containing
A method of manufacturing an insulating film, comprising: Vapor deposition process for performing vapor deposition on the surface of the metal substrate using a vapor deposition source composed of at least one rare earth element R selected from Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu, and hydrogen. And a step of forming a first R ₂ O ₃ film comprising: an oxidation step of oxidizing the metal substrate after vapor deposition;
On the first R ₂ O ₃ film, forming a second R ₂ O ₃ film containing the rare earth element R,
A method of manufacturing an insulating film, comprising:   The method of manufacturing an insulating film according to claim 1, wherein the oxidation step is performed under an atmosphere of pressure lower than atmospheric pressure.   A reaction apparatus comprising an insulating film produced by the method for producing an insulating film according to claim 1 between the metal substrate and the thin film heater.   The reaction apparatus according to claim 5, wherein the reaction apparatus includes a reformer that reforms fuel to generate hydrogen.   The reaction apparatus according to claim 6, further comprising a solid oxide power generation cell. Comprising the reactor according to any one of claims 5 to 6,
A power generation device that generates power using a product generated by the reaction device.   A power generation device comprising the reaction device according to claim 7. A power generator according to any one of claims 8 to 9,
And an electronic device body that operates by electricity generated by the power generation device.

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