JP5230165B2 - Semiconductor processing unit and semiconductor manufacturing apparatus - Google Patents

Description

  The present invention relates to a single-wafer type semiconductor processing unit that heat-treats a substrate to be heated such as a semiconductor wafer, and a semiconductor manufacturing apparatus incorporating the semiconductor processing unit.

  In a conventional semiconductor manufacturing apparatus, when a substrate to be heated (silicon wafer, glass substrate, etc.) is heat-treated in a heat treatment section, a gas is generated as a sublimate from the resist solution applied to the substrate to be heated, and this gas adheres to the pipe. , Cause clogging by volume.

  Various means have been proposed as means for preventing the gas generated as the sublimate from adhering to and volume in the pipe.

  As disclosed in Patent Document 1, there is a semiconductor manufacturing apparatus provided with a means for supplying a purge gas into a heat treatment section and exhausting the purge gas to the outside to collect sublimates.

In addition, there is a semiconductor manufacturing apparatus provided with a heater for heating the purge gas because the sublimate tends to accumulate when the normal temperature purge gas is supplied as it is.
Japanese Patent No. 3853256

  However, the prior art has the following problems.

  When the purge gas is sucked into the heat treatment part at room temperature, the purge gas lowers the internal temperature of the heat treatment part and deteriorates the temperature distribution on the surface of the semiconductor wafer or the like during the heat treatment.

  If the supply amount of the purge gas is decreased to prevent the temperature distribution from deteriorating, the efficiency of collecting the sublimate is deteriorated, the amount of sublimate deposited is increased, and clogging is caused.

  If the amount of purge gas flowing into the heat treatment portion varies depending on the location, the temperature distribution of the semiconductor wafer or the like during the heat treatment is adversely affected.

  Providing a heater for heating the purge gas increases the cost.

  The present invention has been made in consideration of the above points, and is a low-cost semiconductor processing unit capable of preventing clogging by making the temperature distribution on the surface of the substrate to be heated uniform, reducing the deposition of sublimates, and preventing clogging. Another object of the present invention is to provide a semiconductor manufacturing apparatus incorporating the semiconductor processing unit.

In order to solve such a problem, a semiconductor processing unit according to the present invention is a semiconductor processing unit for processing a substrate to be heated in a heat treatment part, and includes a protective plate around the heat treatment part, and a lower surface of the protection plate The purge gas supplied to the heater is heated and dispersed evenly around the protection plate, and the heat generated by the heat treatment part is absorbed by the purge gas by receiving heat transmitted to the lower side and the periphery. And a heat dispersion mechanism for circulating in the heat treatment chamber of the heat treatment section .

  With this configuration, the heating and dispersing mechanism warms the purge gas supplied to the lower surface of the protective plate and distributes it evenly around the protective plate. Can be supplied evenly.

Also, the heat of the heat treatment part is absorbed by the purge gas by the heat transmitted to the lower side and the periphery of the heat generated in the heat treatment part and is circulated to the heat treatment chamber, so that the heat of the heat treatment part is surrounded by It is possible to heat only the substrate to be heated while suppressing the transmission.

  The heating and dispersing mechanism includes a pressure accumulating portion that temporarily accumulates the purge gas to make it equal pressure and warms it to flow evenly around, a narrow passage portion that causes the purge gas from the pressure accumulating portion to flow evenly around the protective plate, It is desirable to provide a diffusion portion that spreads the purge gas that has passed through the narrow passage portion uniformly over the entire periphery of the protective plate. It is desirable that the pressure accumulating part is provided at the lower center of the protective plate, and the pressure accumulating part is provided with a purge gas blowing pipe for ejecting purge gas facing it. It is desirable that the narrow passage portion is formed by a narrow passage formed radially from the pressure accumulating portion, and becomes a resistance against the flow of the purge gas and makes the purge gas of the pressure accumulating portion have an equal pressure. The diffusing section is preferably formed by expanding the outlet portion of the narrow passage portion, and it is desirable that the purge gas from the narrow passage portion is diffused to flow uniformly over the entire circumference of the protection plate.

  A semiconductor manufacturing apparatus for processing a plurality of substrates to be processed in parallel by attaching a plurality of semiconductor processing units for processing a substrate to be heated in a heat treatment section, comprising the semiconductor processing unit described above as the semiconductor processing unit. Features.

  By the said structure, it can process efficiently by attaching the said multiple semiconductor processing unit to the said semiconductor manufacturing apparatus.

  Since the heat dispersion mechanism warms the purge gas supplied to the lower surface of the protective plate and distributes it evenly around the protective plate, the warm purge gas can be evenly supplied to the substrate to be heated in the heat treatment chamber. Further, the temperature distribution on the surface of the substrate to be heated can be made uniform, the deposition of sublimates can be reduced, and clogging can be prevented.

  Since a plurality of semiconductor processing units are incorporated in a semiconductor manufacturing apparatus and a plurality of substrates to be heated are processed in parallel, the plurality of substrates to be heated can be processed efficiently.

  Hereinafter, a semiconductor processing unit and a semiconductor manufacturing apparatus according to an embodiment of the present invention will be described. Note that the semiconductor processing unit and the semiconductor manufacturing apparatus of this embodiment are apparatuses used in the process of processing a semiconductor wafer. Specifically, it can be used as a processing apparatus for a resist baking process, a processing apparatus for a color filter manufacturing process (including a semiconductor manufacturing process) for a CCD or C-MOS sensor, a coater / developer apparatus, a wafer heating processing apparatus, or the like. .

[Semiconductor processing unit]
First, the semiconductor processing unit according to the present embodiment will be outlined with reference to the attached drawings. Here, a baking processing unit will be described as an example of the semiconductor processing unit.

  As shown in FIGS. 1 and 2, the baking processing unit 1 mainly includes a base plate 2, a heat treatment unit 3, a chamber opening / closing drive unit 4, a workpiece transfer drive unit 5, an air pressure control system (not shown), It consists of an exhaust system 7 and a heat shield plate 8.

  The base plate 2 is a plate material for supporting the heat treatment part 3 and the like. The base plate 2 is set to a size that can be accommodated in a semiconductor manufacturing apparatus 51 described later.

  The heat treatment unit 3 is a part that performs a baking process on the semiconductor wafer. As shown in FIGS. 1 to 3, the heat treatment unit 3 mainly includes a hot plate 10, a chamber base 11, a chamber cover 12, and a lift pin mechanism unit 13.

  The hot plate 10 is a heat source for heating the semiconductor wafer. The hot plate 10 is formed in a thick disk shape, and is set to a size slightly larger than the semiconductor wafer to be processed. A heating wire (not shown) is incorporated in the hot plate 10.

  The chamber base 11 is a member that covers and supports the hot plate 10 from below. The chamber base 11 mainly includes a bottom plate 15, a peripheral plate 16, and a protective plate 17.

  The bottom plate 15 is a plate material that supports each member and covers the entire lower side. The bottom plate 15 is fixed to the base plate 2 in a state where a movable region of the lift pin mechanism portion 13 is secured. That is, the support column 19 is fixed to the peripheral portion of the bottom plate 15, and the bottom plate 15 is fixed to the base plate 2 through the support column 19.

  The peripheral plate 16 is a member constituting the peripheral wall of the heat treatment chamber 21. The peripheral plate 16 is provided so as to cover the periphery of the hot plate 10. A protective plate 17 is provided between the peripheral plate 16 and the hot plate 10 and between the hot plate 10 and the bottom plate 15 with a certain interval therebetween.

  The protection plate 17 is a member that covers the lower side and the outer peripheral edge of the hot plate 10. The protection plate 17 is formed in a dish shape, and covers the lower side and the outer peripheral edge of the hot plate 10 with an equally spaced gap. Thus, the semiconductor wafer placed on the hot plate 10 is heated while suppressing heat transfer so that heat is not transferred from the lower side or outer periphery of the hot plate 10 to the outside as much as possible. A heat dispersion mechanism 18 (see FIG. 13) for warming and dispersing the purge gas is provided on the back surface of the protective plate 17. A specific configuration of the heat dispersion mechanism 18 will be described later.

  The chamber cover 12 is a member for forming the heat treatment chamber 21 together with the chamber base 11. The chamber cover 12 is mainly composed of an upper plate, a lower plate, a peripheral plate, and a cover plate.

  On the upper side surface of the chamber cover 12, an exhaust unit 30 is provided as an exhaust path through which the purge gas in the heat treatment chamber 21 is drawn. The exhaust unit 30 is an apparatus for exhausting the purge gas in the heat treatment chamber 21 of the heat treatment unit 3 to the outside. The exhaust unit 30 has a function of collecting a gas generated as a sublimation from the resist solution applied to the semiconductor wafer in the heat treatment chamber 21 of the heat treatment unit 3, a solid matter generated in the insulating film manufacturing process, and the like. Yes.

  Specifically, the exhaust unit 30 includes an exhaust pipe 31, a sublimate collection mechanism 32, and piping (purge gas exhaust duct 67 and the like).

  One end of the exhaust pipe 31 is connected to the heat treatment chamber 21 from the center of the chamber cover 12, and the other end is disposed on the outer peripheral edge of the chamber cover 12. The exhaust pipe 31 is set to have a large diameter so that sublimates (see FIG. 10) in the purge gas do not adhere as much as possible. Moreover, the material of the exhaust pipe 31 is comprised with the material which a sublimate does not adhere easily.

  The sublimate collection mechanism 32 is a mechanism for collecting the sublimate in the purge gas. A specific configuration of the sublimate collection mechanism 32 will be described later.

  The lift pin mechanism unit 13 is a mechanism for floating and supporting the semiconductor wafer with respect to the hot plate 10 when the semiconductor wafer is taken in and out of the heat treatment unit 3. The lift pin mechanism 13 is mainly composed of a lift pin base 35 and a lift pin 36. The lift pin base 35 is a plate material for integrally supporting a plurality of lift pins 36. The lift pin base 35 is disposed below the bottom plate 15 of the chamber base 11. The lift pins 36 are members for supporting the semiconductor wafer on the upper side surface of the hot plate 10.

  The chamber opening / closing drive unit 4 is a mechanism for opening and closing the heat treatment chamber 21 of the heat treatment unit 3. The chamber opening / closing drive unit 4 supports the chamber cover 12 of the heat treatment unit 3 and moves it up and down to open and close the heat treatment chamber 21. The chamber opening / closing drive unit 4 includes an air cylinder 38, a linear motion guide 39, and a support arm 40. The air cylinder 38 is connected to an air pressure control system, and is expanded and contracted by air pressure. The linear motion guide 39 is a mechanism for supporting the support arm 40 so as to be movable up and down. The linear motion guide 39 guides the vertical movement of the support arm 40 when the support arm 40 coupled to the air cylinder 38 is moved up and down by the air cylinder 38. The support arm 40 is supported by the linear guide 39 on the base end side of the support arm 40 in the vicinity of the support arm 40 so that the base end of the support arm 40 is vertically movable. As a result, the support arm 40 is fixedly attached to the flange portion 26 of the chamber cover 12 while being supported by the linear motion guide 39 so as to be movable up and down. Supports movable.

  The support arm 40 is formed in a long shape. The air cylinder 38 and the linear motion guide 39 are disposed so as to be located on the downstream side (left side in FIG. 1) of the heat treatment section 3. That is, it is disposed so as to be positioned downstream of the heat treatment section 3 in the air flow in the semiconductor processing unit formed by the exclusion air flow S described later. The support arm 40 is attached to the flange portion 26 of the upper plate of the chamber cover 12 with its base end portion supported by a linear motion guide 39 located downstream of the heat treatment portion 3. Lift the cover 12. The support arm 40 is made of a thick rectangular plate. The thick rectangular plate-like support arm 40 is arranged and attached in the vertical direction. The lower side surface of the support arm 40 is chamfered at its corners, and is fitted into a support arm 43 of the workpiece transfer drive unit 5 described later to be stored (arranged) in a compact manner.

  Further, the air cylinder 38 and the linear guide 39 are fixed to the base plate 2 together with the heat treatment part 3 so as to be arranged in parallel to each other. That is, the air cylinder 38, the linear motion guide 39, and the heat treatment section 3 are disposed in parallel to each other, so that the air cylinder 38, the linear motion guide 39, and the heat treatment section 3 are disposed at substantially the same height or the same height. I am letting. This is because when the plurality of baking processing units 1 are stacked and incorporated in the semiconductor manufacturing apparatus 51, the baking processing units 1 are not bulky and the mounting density of the baking processing units 1 is increased.

  The workpiece delivery drive unit 5 is a mechanism for lifting the semiconductor wafer placed on the upper surface of the hot plate 10 of the heat treatment unit 3 when delivering it. The workpiece transfer drive unit 5 directly moves the lift pin mechanism unit 13 up and down. As a result, the lift pins 36 appear and disappear on the upper surface of the heat plate 10 of the heat treatment unit 3, and the semiconductor wafer is lifted for loading and unloading, or placed on the upper surface of the heat plate 10 for heat treatment.

  The workpiece transfer drive unit 5 includes an air cylinder 42, a linear motion guide 39, and a support arm 43. The air cylinder 42 is connected to an air pressure control system, and is expanded and contracted by air pressure. Further, the air cylinder 42 is provided adjacent to the air cylinder 38 of the chamber opening / closing drive unit 4. The linear motion guide 39 is shared with the chamber opening / closing drive unit 4. A support arm 40 of the chamber opening / closing drive unit 4 is supported on the upper side of one linear motion guide 39 so as to be movable up and down, and a support arm 43 of the workpiece transfer drive unit 5 is supported on the lower side so as to be movable up and down. As described above, the interlocking mechanism is configured such that the support arm 40 of the chamber opening / closing drive unit 4 is supported on the upper side of one linear motion guide 39 and the support arm 43 of the workpiece transfer drive unit 5 is supported on the lower side so as to be vertically movable. Is configured.

  Specifically, this interlocking mechanism is as follows. The support arm 40 of the chamber opening / closing drive unit 4 and the support arm 43 of the workpiece transfer driving unit 5 are supported independently of each other so as to be vertically movable. The movement is restricted by the support arm 40 of the opening / closing drive unit 4. That is, only when the support arm 40 of the chamber opening / closing drive unit 4 is raised, the support arm 43 of the workpiece transfer drive unit 5 can move up and down. That is, the support arm 43 of the workpiece transfer drive unit 5 can move up and down only when the heat treatment chamber 21 is opened and the semiconductor wafer can be taken in and out.

  The linear motion guide 39 guides the vertical movement of the support arm 43 when the support arm 43 coupled to the air cylinder 42 is moved up and down by the air cylinder 42. The support arm 43 is supported by the linear guide 39 on the base end side of the support arm 43 in the vicinity thereof so that the base end portion of the support arm 43 is coupled to the air cylinder 42. As a result, the support arm 43 is supported by the linear motion guide 39 so as to be movable up and down, and its tip is attached to the lift pin base 35 of the lift pin mechanism 13 and moves the lift pin base 35 in the vertical direction. I support it as possible.

  The support arm 43 is set to be long like the support arm 40 of the chamber opening / closing drive unit 4. The support arm 43 is made of a thick rectangular plate. The thick rectangular support arms 43 are attached in the vertical direction. The support arms 43 are formed in an L shape and are fitted to each other so as to cover the support arms 40 of the chamber opening / closing drive unit 4 from below.

  The chamber opening / closing drive unit 4, the workpiece transfer drive unit 5 and the like are provided on both sides of the hot plate 10 with the heat treatment unit 3 interposed therebetween.

  The air pressure control system is a device for supplying high-pressure air as drive gas to each drive unit (four air cylinders 38, 42). The supply amount and pressure of high-pressure air are appropriately adjusted and supplied to each drive unit.

  The exhaust system 7 is a mechanism for creating an exclusion air flow S. This exclusion air flow S is an air flow for cooling the parts around the heat treatment unit 3 to eliminate the adverse effects of heat and for removing foreign matters such as dust generated in the baking processing unit 1. . The baking processing unit 1 is incorporated in the semiconductor manufacturing apparatus 51, and is provided with an air inlet 61 (described later) on the front (right side in FIG. 1) and opened, and an exhaust port (described later) on the rear (left side in FIG. 1). 62 is provided and connected to an exhaust duct 63, which will be described later, so that an exclusion air flow S is generated from the front to the rear. An exhaust system 7 is configured by the intake port 61 and the exhaust port 62 and the heat shield plate 8 having a rectifying function.

  The heat shield plate 8 is a plate material for shielding heat so that heat inside the heat treatment section 3 is not transmitted to the outside as much as possible. The heat shield plate 8 is provided around the entire periphery of the heat treatment section 3. Further, the heat shield plate 8 also has a rectifying function for adjusting the flow path of the exclusion air flow S. Specifically, the heat shield plate 8 is provided with a rectifying function that projects the upstream side (the right side in FIG. 1) and distributes the air flow vertically and horizontally. The heat shield plate 8 includes an upper and lower sorting part 45, a right guide part 46, and a left guide part 47 on the upstream side.

  The vertical sorting part 45 is a member for appropriately sorting and guiding the exclusion air flow S flowing from the upstream side up and down. The vertical sorting part 45 is configured by a surface that is located on the most upstream side and is perpendicular to the exclusion air flow S. The area of the vertical distribution unit 45 is set in accordance with the air flow rate distributed up and down. Specifically, when increasing the air flow to be distributed up and down, the area of the vertical distribution unit 45 is widened (longer to the left and right), and when reducing the air flow to be distributed up and down, the area of the vertical distribution unit 45 is narrowed ( Short to the left and right). In order to more positively distribute up and down, the vertical distribution unit 45 is formed in a wedge shape (a wedge shape when viewed from the side), and the exclusion air flow S is divided up and down. In addition, when the heat shield 8 is attached to the base plate 2 without a gap and the air flow is blocked, the vertical sorting unit 45 guides the exclusion air flow S only upward. The installation position of the vertical sorting unit 45 is set in a range from the vicinity of the inlet 61 of the baking processing unit 1 to the peripheral part of the heat treatment unit 3 in relation to the size of the vertical sorting unit 45.

  When the heat shield plate 8 is attached to the base plate 2 with a gap, the vertical distribution unit 45 may have a mode of distributing the exclusion air flow S up and down. The exclusion air flow S divided in the vertical direction by the vertical distribution unit 45 passes through the upper and lower surfaces of the heat treatment unit 3 and is exhausted to the outside from the exhaust duct 63. In particular, when there is a gap on the lower side, the foreign matter generated in the lift pin mechanism portion 13 flowing around the lift pin mechanism portion 13 is excluded downstream.

  The ratio at which the vertical distribution unit 45 distributes and guides the exclusion air flow S flowing from the upstream side up and down is appropriately set according to the conditions of each unit. That is, when it is desired to flow a large amount of the exclusion air flow S upward, the vertical sorting portion 45 is inclined upward or the position of the wedge is shifted downward. When it is desired to flow a large amount of the exclusion air flow S downward, the vertical sorting portion 45 is inclined downward or the position of the wedge is shifted upward, contrary to the above.

  In addition, when it is desired to distribute the exclusion air flow S with a focus on the left and right, the right guiding unit 46 and the left guiding unit 47 are provided without providing the vertical distributing unit 45.

  The right guide part 46 is a member for guiding the exclusion air flow S flowing from the upstream side to the right side. The right guide unit 46 is continuously connected to the right side of the vertical distribution unit 45 on the right side of the vertical distribution unit 45, and guides the exclusion air flow S flowing from the upstream side and the vertical distribution unit 45 to the right side. The right guide 46 is formed by inclining the heat shield 8 to the right with respect to the air flow. That is, the right guide part 46 of the vertical plate-shaped heat shield 8 that covers the periphery of the heat treatment part 3 is formed so as to face diagonally right so that air flows to the right. The inclination angle of the right guide portion 46 is set to an inclination angle that can be installed in relation to the space around the installation portion of the heat shield 8.

  The left guide portion 47 is a member for guiding the exclusion air flow S flowing from the upstream side to the left side. The left guide unit 47 is continuously connected to the left and right sorting units 45 on the left side of the top and bottom sorting unit 45 and guides the air flow S for removal flowing from the upstream side and the top and bottom sorting unit 45 to the left side. The left guide portion 47 is formed by inclining the heat shield plate 8 to the left side with respect to the air flow. That is, the left guide portion 47 of the vertical heat shield plate 8 that covers the periphery of the heat treatment portion 3 is formed obliquely to the left so that air flows to the left. The inclination angle of the left guide portion 47 is set to an inclination angle that can be installed in relation to the space around the installation portion of the heat shield plate 8.

  As shown in FIGS. 9 to 11, the sublimate collection mechanism 32 of the exhaust unit 30 includes an upper block 81, a simple attachment / detachment unit 82, and a collection block 83.

  The upper block 81 is a block that is connected to the other end of the exhaust pipe 31 and communicates with the recovery block 83. The upper block 81 moves in conjunction with the vertical movement of the chamber cover 12 together with the exhaust pipe 31. The upper block 81 is communicated with the collection block 83 by a simple attachment / detachment portion 82 in a state where it can be easily attached / detached. The upper block 81 is formed in a substantially thick rectangular plate shape, and a purge gas passage 81A is formed therein. On the lower surface of the upper block 81, a fitting adhesive portion 85 of a simple attachment / detachment portion 82 described later is formed. The upper block 81 is made of a material that does not easily adhere sublimates. Specifically, it is made of a material such as polytetrafluoroethylene.

  The simple attachment / detachment portion 82 is a mechanism that allows the upper block 81 and the recovery block 83 to be easily and reliably joined and detached easily. The simple attachment / detachment portion 82 includes a fitting adhesive portion 85, a simple attachment / detachment packing 86, and a lower tube portion 87.

  The fitting adhesive portion 85 is formed on the lower surface of the upper block 81. The fitting adhesive part 85 is constituted by a fitting pipe part 89 and a packing contact surface 90. The fitting tube portion 89 is a tube portion that protrudes downward from the lower surface of the upper block 81. The fitting tube portion 89 is set to have an outer diameter that is slightly smaller than the inner diameter of the lower tube portion 87. This is because the sublimate is dropped into the lower pipe portion 87. When the sublimate in liquid form adheres to the passage 81A inside the upper block 81 and the periphery of the fitting tube portion 89, the sublimated material drops downward from the lower end portion of the fitting tube portion 89. In order to surely drop the sublimate into the lower tube portion 87, the fitting tube portion 89 is set to an outer diameter that is slightly smaller than the inner diameter of the lower tube portion 87 (see FIG. 11).

  The packing contact surface 90 is a surface with which a conical plate portion 86B of a simple removable packing 86 to be described later comes into contact. The packing contact surface 90 is a flat surface formed around the fitting tube portion 89. The internal passage is sealed by the conical plate portion 86 </ b> B of the simple removable packing 86 coming into contact with the packing contact surface 90.

  The simple detachable packing 86 is a packing provided between the upper block 81 and the lower pipe portion 87 for contacting the other side and in close contact with each other using external air pressure to communicate with each other. The simple attachment / detachment packing 86 is specifically attached to the distal end portion of the lower tube portion 87 and disposed so as to contact the packing contact surface 90 of the fitting adhesive portion 85. As shown in FIG. 11, the simple attachment / detachment packing 86 includes a base ring portion 86A and a conical plate portion 86B.

  The base ring portion 86A is a member for supporting the conical plate portion 86B. The base ring portion 86A is formed integrally with the conical plate portion 86B. The base ring portion 86 </ b> A supports the conical plate portion 86 </ b> B while being fixed to the distal end portion of the lower tube portion 87. The simple attachment / detachment packing 66 is made of a material having flexibility such as rubber, and is configured so that the conical plate portion 86B can flex flexibly. As a result, when the tip end portion (outermost portion) of the conical plate portion 86B comes into contact with the packing contact surface 90 of the fitting adhesive portion 85, the conical plate portion 86B is pushed at the external pressure by the negative pressure of the internal passage and is fitted. It is pressed against the packing contact surface 90 of the bonding portion 85 to be sealed. As a result, the simple removable packing 86 can be reliably sealed only by lightly contacting the packing contact surface 90 of the fitting adhesion portion 85. When the exhaust pipe 31 of the exhaust unit 30 is removed, the chamber cover 12 is raised by the chamber opening / closing drive unit 4, and the simple attachment / detachment packing 86 is separated from the packing contact surface 90 of the fitting adhesive unit 85, thereby easily sealing the seal. It can be canceled.

  The lower pipe portion 87 is a pipe communicating with the passage 81 </ b> A of the upper block 81. The lower pipe portion 87 supports the simple removable packing 86 and abuts against the packing contact surface 90 of the upper block 81. The lower pipe portion 87 is provided with a pressure sensor (not shown). The pressure sensor detects the pressure in the passage of the sublimate collection mechanism 32 together with the pressure sensor 105 described later.

  The recovery block 83 is a box for separating and recovering sublimates flowing in the purge gas. The collection block 83 includes a collection box portion 92 and a collection sheet portion (not shown).

  The recovery box portion 92 is a box for causing the purge gas to flow up and down in a zigzag manner to shake off the sublimate. The collection box portion 92 includes a bottom plate portion 95 and a side plate portion 96, and is formed in a deep bottom square dish shape. Further, the recovery box portion 92 is formed in a rectangular shape in plan view, and a recovery chamber 97 and an exhaust chamber 98 are provided therein. The collection box 92 is detachably attached to the base plate 2 with its bottom plate 95 facing up.

  The recovery chamber 97 is a chamber for allowing purge gas to flow up and down in a zigzag manner to shake off sublimates. In the recovery chamber 97, the lower pipe portion 87 is attached to the bottom plate portion 95 and communicates with the passage 81 </ b> A of the upper block 81. An upper plate 100 and a lower plate 101 are attached to the bottom plate portion 95 of the collection box portion 92. The upper plate 100 is a plate for causing the purge gas flowing into the recovery chamber 97 from the lower pipe portion 87 to hit the recovery sheet portion that is the bottom of the recovery chamber 97. The upper plate 100 is set to a size that occupies about half of the height of the collection chamber 97. The dimension of the upper plate 100 is set to a dimension that allows the sublimate to be collected most efficiently in relation to the amount of sublimate accumulated in the collection chamber 97. When the amount of sublimation contained in the purge gas is large, the upper plate 100 is slightly shortened in size, and even if a large amount of sublimation accumulates in the recovery chamber 97, the tip of the upper plate 100 is Avoid contact with the flow path. When the amount of sublimation contained in the purge gas is small, the size of the upper plate 100 is made slightly longer.

  The lower plate 101 is a plate for forming a downstream wall of the collection chamber 97. An opening 102 is formed in the upper part of the lower plate 101. The purge gas that has flowed into the recovery chamber 97 is guided by the upper plate 100, collides with the bottom of the recovery chamber 97, is suddenly pushed upward by the lower plate 101, and the sublimate is shaken off and recovered. . That is, with the upper plate 100 and the lower plate 101, purge gas is flowed up and down in a zigzag manner to shake off the sublimate. The purge gas that has passed through the opening 102 is exhausted from the exhaust chamber 98 to the outside.

  The exhaust chamber 98 is a chamber for exhausting the purge gas after the sublimate is recovered in the recovery chamber 97 to the outside. The exhaust chamber 98 is a downstream chamber of the collection box portion 92 partitioned by the lower plate 101. The collection box portion 92 is provided with a communication pipe 104 for communicating with a purge gas exhaust duct 67 described later. A simple attachment / detachment packing 69 having the same configuration as that of the simple attachment / detachment packing 86 is provided at the tip of the communication pipe 104. A pressure sensor 105 is provided in the exhaust chamber 98. The pressure sensor 105 is a sensor for detecting the pressure in the exhaust chamber 98. The pressure sensor 105 and the pressure sensor detect the state of sublimate accumulated in the recovery chamber 97 by detecting the pressure of each part. When sublimate accumulates in the recovery chamber 97 and the flow path is narrowed, the pressure in the exhaust chamber 98 decreases and the pressure in the lower pipe portion 87 increases. Therefore, the degree of change in the pressure is detected, and the detected value Exceeds the set value, it is determined that maintenance is necessary. For this reason, the pressure sensor 105 is connected to a control unit (not shown), and an alarm system in which a lamp, an alarm device and the like are further connected to the control unit is provided. Thereby, the pressure in the lower pipe portion 87 and the exhaust chamber 98 is periodically detected by each pressure sensor, and the detected value is compared with the set value by the control unit. When the detected value exceeds the set value, Lamps and alarms are used to notify workers of the need for maintenance.

  The collection sheet unit is a member that covers the collection box unit 92. The collection sheet portion is made of a material having high heat conductivity, to which the sublimate P hardly adheres. Specifically, it is made of a material such as polytetrafluoroethylene. The collection sheet part is attached so as to cover the collection box part 92. Specifically, when the screw 93 is passed through the screw hole 92 </ b> A of the recovery box portion 92 and the recovery box portion 92 is fixed to the base plate 2, the recovery sheet portion is placed between the recovery box portion 92 and the base plate 2. It is pinched and fixed. The collection sheet portion is brought into direct contact with the base plate 2 and cooled by the base plate 2. This is because the purge gas is cooled by the relatively cold base plate 2 to recover the sublimate P in the purge gas in a liquid state.

  The heat dispersion mechanism 18 is a mechanism for warming the purge gas supplied to the lower surface of the protection plate 17 and dispersing it uniformly around the protection plate 17. Further, the heat dispersion mechanism 18 takes away (absorbs) the heat of the protective plate 17 that is heated by receiving the heat transmitted to the lower side and the periphery of the heat generated in the heat treatment unit 3 into the heat treatment chamber 21. It is a mechanism for refluxing.

  As shown in FIG. 13, the heat dispersion mechanism 18 is formed on the entire lower surface of the bottom of the protection plate 17. Specifically, the heat dispersion mechanism 18 includes a pressure accumulating portion 114, a narrow passage portion 115, and a diffusing portion 116.

  The pressure accumulating portion 114 is a portion for temporarily accumulating the purge gas to obtain a uniform pressure and warming it up so that it flows evenly around. The pressure accumulating portion 114 is provided at the center of the protection plate 17. A purge gas blowing pipe 118 is provided at the lower center of the protective plate 17. The purge gas blowing pipe 118 is provided so as to face the pressure accumulating portion 114 of the protection plate 17 while being connected to a purge gas supply device (not shown). The purge gas is blown out toward the pressure accumulating portion 114 of the protection plate 17 through the purge gas blowing pipe 118. The pressure accumulating portion 114 includes a protection plate 17, a rectifying plate (not shown), and a spacer 119. The spacer 119 is formed of a substantially fan-shaped plate material. The pressure accumulating portion 114, the narrow passage portion 115, and the diffusing portion 116 are formed by arranging the spacers 119 radially evenly on the back surface of the 12 protection plates 17. The current plate is a plate material that is attached to the upper surface of the bottom plate 15 and covers the heat dispersion mechanism 18. The rectifying plate is made of a fluororesin such as polytetrafluoroethylene, which is difficult to adhere adhesive foreign matter (sublimation product).

  The pressure accumulating portion 114 is formed in a regular dodecagonal shape (substantially circular shape) by 12 spacers 119. The size (substantially circular diameter) of the pressure accumulating portion 114 is set to be much larger than the width of the narrow passage portion 115. As a result, the pressure accumulating unit 114 functions as an accumulator that once accumulates the purge gas blown out from the purge gas blowing pipe 118 to obtain a uniform pressure and applies a constant pressure to the surroundings. That is, the purge gas once accumulated in the pressure accumulating portion 114 flows into each narrow passage portion 115 at an equal pressure as indicated by an arrow A, and the same amount of purge gas flows into all the narrow passage portions 115. Further, the pressure accumulating unit 114 also functions to warm the purge gas by the protective plate 17 heated by the heat treatment unit 3. The purge gas is also warmed by the narrow path portion 115 and the diffusion portion 116.

  The narrow passage portion 115 is a portion for allowing the purge gas from the pressure accumulating portion 114 to flow evenly around the protective plate 17. The narrow path portion 115 is configured by a plurality of narrow passages formed radially from the pressure accumulating portion 114. In the present embodiment, 12 passages are formed by 12 spacers 119. The narrow path portion 115 is set much smaller than the volume of the pressure accumulating portion 114. As a result, the narrow passage portion 115 has a certain resistance against the flow of the purge gas, and the purge gas in the pressure accumulating portion 114 is made to have a uniform pressure, so that the same amount of purge gas flows into all the narrow passage portions 115. ing.

  The diffusion part 116 is a part for evenly spreading the purge gas that has passed through the narrow path part 115 over the entire periphery of the protective plate 17. The diffusing portion 116 is configured by expanding the exit portion of the narrow passage portion 115 in a tapered shape with a spacer 119. The diffusion gas 116 expands the purge gas flowing through the narrow passage 115 and flows into the annular flow path 121 between the side wall portion of the protection plate 17 and the peripheral plate 16. The diffusion unit 116 is provided adjacent to each other with a predetermined interval. The interval between the diffusion portions 116 is set so that the purge gas that flows into the annular flow channel 121 while being diffused by the diffusion portion 116 flows into the annular flow channel 121 and is adjacent to each other. That is, the interval between the diffusing portions 116 is set so that the purge gas diffused by the diffusing portion 116 flows through the annular channel 121 over the entire circumference of the protective plate 17.

  The baking processing unit 1 configured as described above is incorporated in the semiconductor manufacturing apparatus 51. In other words, the baking processing unit 1 is incorporated in each of the three shelf sections 59 in two rows of the semiconductor manufacturing apparatus 51.

[Semiconductor manufacturing equipment]
Next, the semiconductor manufacturing apparatus according to the present embodiment will be outlined based on the attached drawings.

  The semiconductor manufacturing apparatus 51 is an apparatus in which a plurality of baking processing units 1 are incorporated to improve the ability to process a semiconductor wafer. In the semiconductor manufacturing apparatus 51 in which a plurality of baking processing units 1 are incorporated, the processing capability is greatly improved by performing the heat treatment of the semiconductor wafer in parallel with each baking processing unit 1.

  Specifically, as shown in FIGS. 1 and 4 to 7, the semiconductor manufacturing apparatus 51 mainly includes a frame 52, a control unit (not shown), and an exhaust device 54.

  The frame 52 is a skeleton part constituting the entire semiconductor manufacturing apparatus 51. The frame 52 includes a control unit installation unit 56, a unit installation unit 57, and an exhaust device installation unit 58. The control unit installation unit 56 is a part that incorporates the control unit. The control unit installation unit 56 is provided on the upper portion of the frame 52. The control unit installation unit 56 may not be provided in the frame 52 due to the number of the baking processing units 1 incorporated.

  The unit installation part 57 is a space for incorporating the baking processing unit 1. Here, the unit installation part 57 is comprised by the shelf part 59 of 3 steps | paragraphs in 2 rows. The width of each shelf 59 is set according to the size of the base plate 2 of the baking processing unit 1. The baking processing unit 1 is assembled with its base plate 2 fixed to each shelf 59. The inside of the shelf 59 is sealed up, down, left, and right with the baking processing unit 1 incorporated in the shelf 59. The shelf 59 may be sealed by attaching plate materials on the top, bottom, left and right, or only the left and right plate materials may be provided in advance, and the top and bottom may be closed by the base plate 2 of the baking processing unit 1. Thus, each shelf 59 is sealed in the top, bottom, left, and right, and is provided with an intake port 61 at the front and an exhaust port 62 at the rear, and is open in the front-rear direction. The intake port 61 is configured by a rectangular opening that is largely open in front of the baking processing unit 1. Outside air flows in a wide range from the right guide portion 46 to the left guide portion 47 of the heat shield plate 8 by the intake port 61 and is rectified by the heat shield plate 8.

  The exhaust port 62 is provided on the rear surface of the baking processing unit 1.

  An exhaust duct 63 extending in the vertical direction is provided on the back surface of the frame 52. The exhaust port 62 of each shelf 59 is connected to the exhaust duct 63.

  The exhaust device installation portion 58 is a portion where an exhaust device 54 for exhausting each shelf 59 of the frame 52 is installed. The exhaust device installation part 58 is provided in the lower part of the frame 52. An exhaust device 54 is provided in the exhaust device installation portion 58.

  The control unit is an apparatus for controlling the semiconductor manufacturing apparatus 51. The control unit is provided in the control unit installation unit 56 of the frame 52. The control unit controls each baking processing unit 1 of the semiconductor manufacturing apparatus 51 to perform heat treatment, open / close control of the heat treatment chamber 21, and the like.

  The exhaust device 54 is connected to the exhaust system 7 of the semiconductor processing unit 1 so as to create an exhaust air flow in the baking processing unit 1 and exhaust the purge gas. The exhaust device 54 is connected to the exhaust system 7 of the semiconductor processing unit 1 and draws in air, thereby creating an exclusion air flow S in the baking processing unit 1.

  The exhaust device 54 includes an exhaust duct 63, a buffer box 64, a connection pipe 65, a simple attachment / detachment packing 66, a purge gas exhaust duct 67, a purge gas connection pipe 68, and a purge gas simple attachment / detachment packing 69.

  The exhaust duct 63 is a duct through which an opening at one end (upper end) thereof communicates with the exhaust port 62 of the baking processing unit 1. The exhaust duct 63 includes a horizontal pipe portion 72, a vertical pipe portion 73, and a connecting pipe portion 74. The horizontal tube portion 72 and the vertical tube portion 73 are formed in a rectangular tube shape. The horizontal tube portion 72 is a portion that communicates with the exhaust port 62 of the baking processing unit 1.

  The vertical pipe portion 73 is a portion that communicates between the horizontal pipe portion 72 and the exhaust device installation portion 58. The vertical tube portion 73 is provided integrally with the horizontal tube portion 72 and communicates with each other. The vertical tube portion 73 communicates with the upper horizontal tube portion 72 at one end thereof. The middle horizontal pipe portion 72 communicates with the other end portion. The lower horizontal pipe portion 72 communicates with the central portion thereof. Each vertical pipe portion 73 is fixed to the back surface of the frame 52 with a screw. You may fix with another well-known fixing means.

  The connecting pipe portion 74 is a pipe portion that extends horizontally from the lower end portion of the vertical pipe portion 73 toward the buffer box 64 side. By this connecting pipe portion 74, the vertical pipe portion 73 and the buffer box 64 are communicated.

  The buffer box 64 is a member for sucking the gas in each baking processing unit 1 through each exhaust duct 63 and adjusting and equalizing the negative pressure applied to each exhaust duct 63. The buffer box 64 is formed of a hollow box material, and the other end portions of the exhaust ducts 63 are communicated with each other. The buffer box 64 is provided with three insertion pipe portions 64 A connected to the connection pipe 65 and one insertion pipe portion 64 B connected to the purge gas connection pipe 68. Furthermore, one insertion pipe portion 64C connected to an external pipe (not shown) is provided.

  The connection pipe 65 is a pipe for connecting the exhaust duct 63 and the buffer box 64. The base end of the connection pipe 65 is inserted into the insertion pipe portion 64 </ b> A of the buffer box 64. The distal end portion of the connection pipe 65 is supported by the fixed plate portion 78 so as to face the connection pipe portion 74. The distal end portion of the connection pipe 65 is formed in a flat surface shape and comes into contact with the simple removable packing 66.

  The simple attachment / detachment packing 66 is provided between the exhaust duct 63 and the buffer box 64 and is in contact with the other side and is brought into close contact with each other by using external pressure to communicate with each other. The simple removable packing 66 is attached to the distal end portion of the connecting pipe portion 74 and is disposed so as to contact the distal end portion of the flat surface of the connecting pipe 65. The simple attachment / detachment packing 66 is configured in the same manner as the simple attachment / detachment packing 86 of the simple attachment / detachment portion 82.

  The purge gas exhaust duct 67 communicates with the lower connection block 33 of the exhaust unit 30 of each baking processing unit 1 and exhausts the purge gas in the heat treatment chamber 21 of the heat treatment unit 3 to the outside. The purge gas exhaust duct 67 is formed in a vertically long rectangular tube, and is disposed so as to face the lower connection block 33 of each baking processing unit 1. The lower connection block 33 is provided with a purge gas simple attachment / detachment packing 69, and the purge gas exhaust duct 67 is provided with an opening at a position facing the purge gas easy attachment / detachment packing 69. The purge gas simple attachment / detachment packing 69 is configured in the same manner as the simple attachment / detachment packing 66, and can be surely sealed only by being brought into contact therewith. The purge gas connection pipe 68 communicates the lower end portion of the purge gas exhaust duct 67 and the insertion pipe portion 64B of the buffer box 64. The insertion pipe portion 64C of the buffer box 64 is connected to an external pipe (not shown) and is connected to an external exhaust blower or the like. The exhaust blower is always operated, and the inside of the baking processing unit 1 is always sucked. That is, the exclusion air flow S always flows in each baking processing unit 1, and the purge gas is constantly sucked from the exhaust part 30.

  The purge gas blowing pipe 118 is connected to a purge gas supply device (not shown).

  The semiconductor manufacturing apparatus 51 configured as described above is used as follows.

  In the baking processing unit 1 incorporated in each shelf 59, the heat treatment chamber 21 of the heat treatment unit 3 is opened by the chamber opening / closing drive unit 4 under the control of the control unit. A semiconductor wafer is carried into the heat plate 10 of the heat treatment chamber 21 from outside by a transfer robot (not shown).

  At this time, the lift pins 36 of the lift pin mechanism 13 are lifted by the workpiece transfer drive unit 5, and the semiconductor wafer is placed on the lift pins 36. Next, the lift pins 36 are lowered by the workpiece transfer drive unit 5, and the semiconductor wafer is placed on the anchor pins on the hot plate 10.

  Next, the heat treatment chamber 21 of the heat treatment unit 3 is closed by the chamber opening / closing drive unit 4, and the semiconductor wafer is heated in the heat treatment chamber 21. The hot plate 10 is heated to a set temperature to heat the semiconductor wafer in the heat treatment chamber 21 for a set time. This process is simultaneously performed in parallel by the plurality of baking processing units 1.

  The exhaust device 54 of the semiconductor manufacturing apparatus 51 is always in operation, and an exclusion air flow S is always generated in each baking processing unit 1. Thereby, it cools so that the circumference | surroundings of each baking processing unit 1 may not heat too much. Further, at the same time, the flow path is formed so that the exclusion air flow S efficiently flows around the heat treatment unit 3 by the vertical sorting unit 45, the right guide unit 46, and the left guide unit 47 of the heat shield plate 8. doing.

  In the vertical sorting unit 45, the exclusion air flow S flowing from the upstream side is received by the surface of the vertical sorting unit 45 perpendicular to the flow and flows to the surroundings. Thereby, the exclusion air flow S is dispersed vertically and horizontally. Among them, the exclusion air flow S that has flowed upward flows along the upper surface of the heat treatment section 3 to the downstream side. The exclusion air flow S that has flowed downward flows along the lower surface of the heat treatment section 3 to the downstream side.

  The exclusion air flow S that has flowed to the left and right of the vertical distribution unit 45 flows to the left and right right guide portions 46 and the left guide portion 47.

  The right guide unit 46 and the left guide unit 47 guide the exhaust air flow S from the upstream side and the exhaust air flow S from the upper and lower sorting unit 45 to the left and right edges of the heat treatment unit 3. The exclusion air flow S that flows to the left and right edges of the heat treatment section 3 flows downstream along the edges of the heat treatment section 3, and movable parts such as the chamber opening / closing drive section 4, the workpiece transfer drive section 5, and the linear motion guide 39. And flows into the exhaust duct 63 while shutting off the heat treatment section 3. Since the movable part is located on the downstream side of the heat treatment part 3, foreign matters such as dust are generated on the downstream side of the heat treatment part 3. As a result, if foreign matter is generated in the movable part due to opening / closing of the heat treatment chamber 21 of the heat treatment part 3, expansion / contraction of the air cylinders 38, 42, slide of the support arm 40 supported by the linear motion guide 39, etc. are excluded. The air flow S flows the foreign matter into the exhaust duct 63 and discharges it to the outside.

  On the other hand, in the heat treatment section 3, purge gas is supplied as the semiconductor wafer is heated by the hot plate 10. The purge gas supplied from the purge gas supply device is blown out from the purge gas blowing pipe 118 to the heat dispersion mechanism 18 below the protective plate 17. The purge gas blown out from the purge gas blowing pipe 118 first flows into the pressure accumulating portion 114 of the heat dispersion mechanism 18 and is temporarily stored. As a result, the purge gas is equalized in the pressure accumulating unit 114. Further, the purge gas is warmed by the protective plate 17 heated by the heat treatment unit 3. As a result, the purge gas is warmed and flows evenly around.

  Each narrow passage 115 flows an equal amount of the purge gas warmed by the pressure accumulator 114 and made uniform. The purge gas that has flowed through the narrow path 115 is diffused by the diffusion section 116 and flows into the annular flow path 121. As a result, the purge gas rises in a uniform flow in the annular flow path 121.

  The purge gas also flows in the narrow passage 115, the diffusion portion 116, and the annular flow passage 121 while being heated by the heated protection plate 17. That is, the purge gas flows while taking the heat of the protection plate 17, and protects the components outside the protection plate 17 from the influence of heat.

  The purge gas that has risen in a uniform flow through the annular flow path 121 flows into the heat treatment chamber 21 from the periphery of the hot plate 10. At this time, the purge gas fills the heat treatment chamber 21 evenly while flowing uniformly from the periphery of the semiconductor wafer placed on the hot plate 10. Since this purge gas is warmed before flowing into the heat treatment chamber 21, it is combined with the uniform distribution to make the temperature distribution of the semiconductor wafer uniform and reduce the adhesion of sublimates. Next, the purge gas gathers in the central portion of the heat treatment chamber 21 and is exhausted to the outside through the exhaust pipe 31 while collecting the sublimated material. At this time, the flow rate of the purge gas is set to about 3 liters per minute. If the flow rate of the purge gas is too large, the temperature distribution of the semiconductor wafer is adversely affected. Therefore, the purge gas flow rate is adjusted according to the balance between the exhaust pressure from the exhaust unit 30 and the supply amount of the purge gas. Specifically, since it depends on the difference in conditions such as the size of each part, it is set by performing an experiment.

  Further, when a sublimate adheres to the cover plate 25 due to long-term use, the cover plate 25 is removed, washed, or replaced with a new cover plate 25.

  When the heat treatment of the semiconductor wafer is completed and replaced with a new semiconductor wafer, the chamber cover 12 is lifted upward by the chamber opening / closing drive unit 4. At this time, since the exhaust pipe 31 and the upper block 81 of the exhaust unit 30 are fixed to the chamber cover 12 side, they are lifted upward together with the chamber cover 12.

  At this time, the simple attachment / detachment packing 86 of the simple attachment / detachment portion 82 is pulled apart while the conical plate portion 86B is bent inward while the conical plate portion 86B is in contact with the packing contact surface 90 of the fitting adhesive portion 85. Further, the tip of the conical plate portion 86B is separated from the packing contact surface 90, and the upper block 81 is separated from the recovery block 83.

  Thereby, the suction on the upper block 81 side is eliminated, and the gas in the heat treatment chamber 21 of the heat treatment unit 3 is not sucked. Thereby, the gas around the heat treatment part 3 is not sucked into the heat treatment chamber 21. As a result, the chamber cover 12 is gently opened without disturbing the gas around the semiconductor wafer after the heat treatment.

  After the semiconductor wafer in the heat treatment unit 3 is replaced with a new semiconductor wafer, the chamber cover 12 is lowered by the chamber opening / closing drive unit 4.

  As a result, the fitting tube portion 89 of the upper block 81 is inserted into the lower tube portion 87, and the simple removable packing 86 is bonded to the fitting adhesive portion 85. At this time, since the inside of the collection block 83 is always sucked, the conical plate portion 86B of the simple attachment / detachment packing 86 comes into contact with the packing contact surface 90 of the fitting adhesive portion 85, whereby the upper block 81 and the lower tube portion 87 are contacted. The inner passage and the outside are cut off and the conical plate portion 86B is pushed by the external pressure. As a result, the conical plate portion 86B is pressed against the packing contact surface 90 and reliably seals.

  During the heat treatment, the purge gas is exhausted from the exhaust pipe 31 of the exhaust unit 30 through the sublimate recovery mechanism 32 to the outside through the purge gas exhaust duct 67 and the exhaust device 54.

  At this time, the purge gas containing the sublimate P flows into the recovery block 83 through the passage 81 </ b> A of the upper block 81 and the lower pipe portion 87.

  In the recovery block 83, the purge gas is first guided by the upper plate 100 in the recovery chamber 97 and hits the recovery sheet portion. Thereby, the purge gas is cooled. Next, the purge gas is rapidly raised by the lower plate 101, and the sublimate P in the purge gas is shaken off. There is also a sublimation P that hits and adheres to the lower plate 101. Thereby, the sublimate P is stored in the collection chamber 97. The purge gas after the sublimate P is removed flows into the exhaust chamber 98 from the opening 102 of the lower plate 101 and is exhausted to the outside through the communication pipe 104, the purge gas exhaust duct 67, and the exhaust device 54.

  Further, the sublimate P in the purge gas also adheres to the exhaust pipe 31 and the upper block 81. On the other hand, since the diameter of the exhaust pipe 31 is increased and the exhaust pipe 31 is made of a material such as polytetrafluoroethylene, the sublimate P does not adhere to the exhaust pipe 31 so much.

  On the other hand, since the passage 81A of the upper block 81 is bent at a right angle, the sublimation product P tends to accumulate, but the upper block 81 is difficult to adhere the sublimation product P, and thus drops downward from the fitting tube portion 89. The dropped sublimate P is collected from the lower pipe portion 87 into the collection chamber 97.

  When the sublimate P accumulates in the recovery chamber 97, a cleaning operation is performed. In this case, the chamber cover 12 is opened, the upper block 81 is separated from the recovery block 83, the screw is removed, and the recovery box portion 92 is removed together with the recovery sheet portion.

  Next, the recovery box portion 92 and the recovery sheet portion are cleaned, and the purge gas simple attachment / detachment packing 69 is fitted to the purge gas exhaust duct 67 and fixed to the base plate 2 with screws. In addition, after removing the collection box part 92 and the collection sheet part, it may be replaced with a new collection box part 92 and a collection sheet part, and the removed collection box part 92 and the collection sheet part may be washed later.

  When the exhaust duct 63 is removed for maintenance of the baking processing unit 1 or the like, the screws are loosened to remove the horizontal tube portion 72 and the vertical tube portion 73, and the connecting tube portion 74 is pulled out. Thereby, the exhaust duct 63 is easily removed. When the exhaust duct 63 is attached, the connecting pipe portion 74 is inserted, and the simple removable packing 66 is brought into contact with the tip of the connecting pipe 65. Thereby, it is pushed and sealed at the external pressure. The horizontal tube portion 72 and the vertical tube portion 73 are fixed with screws.

  As described above, the rectifying function of the heat shield plate 8 causes the exclusion air flow S to flow to the movable part and discharge the foreign substance to the downstream side of the heat treatment part 3. Will not adversely affect the surface of the semiconductor wafer. Thereby, the processing accuracy of the semiconductor wafer by the baking processing unit 1 can be improved.

  Moreover, since the periphery of the heat treatment part 3 can be efficiently cooled by the air flow S for exclusion, it is possible to prevent each part around the heat treatment part 3 from being abnormally heated.

  The movable parts such as the chamber opening / closing drive part 4 and the workpiece transfer drive part 5 are provided in parallel with the heat treatment part 3 on the downstream side of the heat treatment part 3 in the flow path of the exclusion air flow S, thereby improving the arrangement of each part. Therefore, the thickness of the baking processing unit 1 can be reduced. As a result, a plurality of baking processing units 1 having a reduced thickness can be incorporated into the semiconductor manufacturing apparatus 51. That is, since a plurality of baking processing units 1 can be accommodated in the semiconductor manufacturing apparatus 51 in a compact manner, the mounting density is increased, and many baking processing units 1 can be incorporated into the semiconductor manufacturing apparatus 51. That is, the mounting density of the baking processing unit 1 can be increased. As a result, the processing capacity of the semiconductor manufacturing apparatus 51 is improved, and a plurality of semiconductor wafers can be processed efficiently.

  Further, since the exhaust duct 63 can be easily attached to and detached from the buffer box 64 by the simple attachment / detachment packing 66, the maintenance of the semiconductor manufacturing apparatus 51 is facilitated.

  Moreover, since the exhaust part 30 was made the structure which isolate | separates the exhaust pipe 31 and the sublimate collection | recovery mechanism 32, the piping for eliminating the sublimate P can be shortened. Thereby, clogging of piping due to adhesion of the sublimate P is less likely to occur.

  In addition, since the sublimate P is efficiently recovered in the recovery chamber 97 of the sublimate recovery mechanism 32, clogging in other piping portions is reduced.

  If the sublimate P accumulates in the collection box 92 of the sublimation collection mechanism 32, the collection box 92 is removed and washed, so that the cleaning workability is improved.

  In addition, the clogging of piping and the like is greatly reduced, and the sublimation product P is collected by the collection box 92, so that it is not necessary to wash frequently, and the number of maintenance can be reduced.

  Since the diameter of the exhaust pipe 31 is increased and the material of the exhaust pipe 31 is made difficult for the sublimate P to adhere, even if the sublimate P adheres to the inner surface of the exhaust pipe 31, the pressure drop due to that occurs. The time can be lengthened and the number of maintenance can be reduced.

  Since the exhaust pipe 31 of the exhaust unit 30 and the sublimate collection mechanism 32 are separated, the exhaust tube can be eliminated, and the cleaning work and parts replacement work due to clogging of the exhaust tube can be omitted.

  Since the exhaust pipe 31 of the exhaust unit 30 and the sublimate collection mechanism 32 are separated, the exhaust pressure for sucking the heat treatment chamber 21 of the heat treatment unit 3 can be temporarily stopped, and when the inside of the heat treatment chamber 21 is opened, The air flow sucked into the heat treatment chamber 21 can be eliminated, and entry of foreign matters such as dust from the outside can be prevented.

  By providing the sublimate collection mechanism 32, the maintainability can be greatly improved with a simple structure and low cost.

  In addition, the purge gas flowing onto the semiconductor wafer in the heat treatment chamber 21 can be made uniform by the heat dispersion mechanism 18, and the purge gas can be preheated by the protective plate 17, so that the temperature distribution accuracy of the surface of the semiconductor wafer can be improved. It can be greatly improved.

  Since purge gas is allowed to flow along the lower surface and outer peripheral surface of the protective plate 17 to absorb the heat of the protective plate 17, it is possible to prevent the influence of the heat of the components around the protective plate 17, and in the heat treatment chamber 21. Since the purge gas does not flow in at room temperature, adhesion of the sublimate into the heat treatment chamber 21 can be reduced, and the sublimate can be efficiently recovered with the purge gas. As a result, the adhesion of sublimates into the heat treatment chamber 21 is greatly reduced, and the number of cleaning operations can be greatly reduced.

  Further, a heater for warming the purge gas is not necessary.

[Modification]
In the above-described embodiment, the six baking processing units 1 are incorporated in the semiconductor manufacturing apparatus 51. However, the number of the shelves 59 is increased to seven or more or five or less depending on the required processing capacity. It can be reduced. One baking processing unit 1 may be incorporated in the semiconductor manufacturing apparatus 51. Also in this case, the same operations and effects as those of the above embodiment can be obtained.

  In the above-described embodiment, the upper plate 100 and the lower plate 101 are provided one by one, but two or more of these are provided, and the purge gas is flowed up and down several times in a zigzag manner. The sublimate P may be shaken off. As the number of the upper plate 100 and the lower plate 101 increases, the sublimate P can be efficiently shaken off from the purge gas. For this reason, as many of the upper plates 100 as possible are installed in relation to the size of the collection box 92.

  The sublimate collection mechanism 32 of the above embodiment is an apparatus that generates a gas containing foreign substances such as sublimates, and can be applied to all apparatuses that need to efficiently remove foreign substances such as sublimates. .

  In the above-described embodiment, the recovery box portion 92 is configured to open on the base plate 2 side, and the recovery sheet portion is directly bonded to the base plate 2. However, as shown in FIG. 2 may be configured to be fixed with a screw 110 via a heat conductive sheet 109. The recovery box portion 106 may be directly bonded without providing the heat conductive sheet 109.

  In this case, the cover plate 108 is attached to the collection box portion 106 with screws 111, and the lower tube portion 87, the upper plate 100, and the lower plate 101 are attached to the cover plate 108.

  With this configuration, it is not necessary to remove the collection box portion 92 and the collection sheet portion together as in the above embodiment, and the collection box portion 106 can be removed as it is to perform a cleaning operation or the like. Thereby, the cleaning workability is improved.

It is a top view which shows the baking processing unit concerning embodiment of this invention. It is a side view which shows the baking processing unit concerning embodiment of this invention. It is sectional drawing which shows the heat processing part of the baking processing unit concerning embodiment of this invention. It is a front view which shows the semiconductor manufacturing apparatus concerning embodiment of this invention. It is a side view which shows the semiconductor manufacturing apparatus concerning embodiment of this invention. It is a plane sectional view showing a semiconductor manufacturing device concerning an embodiment of the present invention. It is a side view which shows the principal part of the semiconductor manufacturing apparatus concerning embodiment of this invention. It is sectional drawing which shows the sublimate collection | recovery mechanism concerning embodiment of this invention. It is a top view which shows the sublimate collection | recovery mechanism concerning embodiment of this invention. It is sectional drawing which shows the principal part of the sublimate collection | recovery mechanism concerning embodiment of this invention. It is sectional drawing which shows the simple attachment / detachment packing of the semiconductor manufacturing apparatus concerning embodiment of this invention. It is sectional drawing which shows the modification of this invention. It is a top view which shows the heating dispersion mechanism of the semiconductor manufacturing apparatus concerning embodiment of this invention.

Explanation of symbols

  1: Baking unit 2: Base plate, 3: Heat treatment unit, 4: Chamber opening / closing drive unit, 5: Workpiece transfer drive unit, 7: Exhaust system, 8: Heat shield plate, 10: Hot plate, 11: Chamber base, 12 : Chamber cover, 13: Lift pin mechanism, 15: Bottom plate, 16: Perimeter plate, 17: Protection plate, 19: Support, 21: Heat treatment chamber, 26: Flange, 30: Exhaust, 31: Exhaust pipe, 32: Sublimate collection mechanism, 35: lift pin base, 36: lift pin, 38: air cylinder, 39: linear motion guide, 40: support arm, 42: air cylinder, 43: support arm, 45: vertical sorting part, 46: right guide 47: Left guide unit 51: Semiconductor manufacturing device 52: Frame 54: Exhaust device 56: Control unit installation unit 57: Unit installation unit 58: Exhaust unit installation unit 59: shelf, 61: intake port, 62: exhaust port, 63: exhaust duct, 64: buffer box, 65: connection pipe, 66: simple removable packing, 67: purge gas exhaust duct, 68: purge gas connection pipe, 69: Purge gas simple attachment / detachment packing, 72: horizontal pipe part, 73: vertical pipe part, 74: connection pipe part, 76: adjustment plate, 77: long hole, 78: fixed plate part, 81: upper block, 82: simple attachment / detachment part, 83: Recovery block, 85: Fitting adhesive part, 86: Simple attachment / detachment packing, 87: Lower pipe part, 89: Fitting pipe part, 90: Packing contact surface, 92: Recovery box part, 95: Bottom plate part, 96 : Side plate portion, 97: recovery chamber, 98: exhaust chamber, 100: upper plate, 101: lower plate, 102: opening, 104: communication pipe, 105: pressure sensor, 106: recovery box portion, 107: bottom plate portion, 108 : Cover plate, 114: pressure accumulator, 1 5: Pathway unit, 116: spreading unit, 118: purge gas blowout tube, 119: spacer, 121: annular flow path.

Claims (6)

A semiconductor processing unit for processing a substrate to be heated in a heat treatment section,
A protective plate is provided around the heat treatment part,
The purging gas supplied to the lower surface of the protective plate is heated and dispersed evenly around the protective plate, and the protective plate heated by receiving heat transmitted to the lower side and the periphery of the heat generated in the heat treatment section A semiconductor processing unit comprising a heat dispersion mechanism that absorbs the heat of the gas with a purge gas and circulates it in the heat treatment chamber of the heat treatment section . The semiconductor processing unit according to claim 1,
The heat dispersion mechanism temporarily accumulates the purge gas to make it equal pressure, warms it up and flows it evenly around the passage, and a narrow passage part that evenly flows the purge gas from the pressure accumulation part around the protective plate, A semiconductor processing unit, comprising: a diffusion portion that spreads the purge gas that has passed through the narrow passage portion uniformly over the entire periphery of the protective plate. The semiconductor processing unit according to claim 2,
A semiconductor processing unit, wherein the pressure accumulating part is provided at the center below the protective plate, and a purge gas blowing pipe for ejecting purge gas is provided facing the pressure accumulating part. The semiconductor processing unit according to claim 2,
A semiconductor processing unit comprising a plurality of narrow passages formed radially from the pressure accumulating part, and formed of narrow passages that resist the flow of the purge gas and make the purge gas of the pressure accumulating part uniform pressure . The semiconductor processing unit according to claim 2,
2. The semiconductor processing unit according to claim 1, wherein the diffusion portion is configured by expanding an outlet portion of the narrow passage portion, and diffuses a purge gas from the narrow passage portion so as to flow uniformly over the entire circumference of the protection plate. A semiconductor manufacturing apparatus for processing a plurality of substrates in parallel by attaching a plurality of semiconductor processing units for processing a substrate to be heated in a heat treatment unit,
6. A semiconductor manufacturing apparatus comprising the semiconductor processing unit according to claim 1 as the semiconductor processing unit.

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