JP5229115B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5229115B2 JP5229115B2 JP2009134565A JP2009134565A JP5229115B2 JP 5229115 B2 JP5229115 B2 JP 5229115B2 JP 2009134565 A JP2009134565 A JP 2009134565A JP 2009134565 A JP2009134565 A JP 2009134565A JP 5229115 B2 JP5229115 B2 JP 5229115B2
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- light emitting
- light
- emitting device
- emitting element
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- 238000007747 plating Methods 0.000 claims description 5
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 20
- 238000007789 sealing Methods 0.000 description 16
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
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- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052747 lanthanoid Inorganic materials 0.000 description 5
- 150000002602 lanthanoids Chemical class 0.000 description 5
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- -1 nitride silicate Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
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- 239000010409 thin film Substances 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052915 alkaline earth metal silicate Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical class C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Led Device Packages (AREA)
Description
本実施の形態の発光装置100を図1A、図1Bに示す。図1Aは発光装置100の斜視図であり、図1Bは図1AのA−A’断面における断面図である。
導電部材は、発光素子に直接又は間接的に電気的に接続して外部から供給される電気を通電させるための一対の電極として機能させるものであり、少なくとも一方の導電部材は上面に台座部材が載置可能な大きさを有しており、絶縁部材(基体)を介して設けられる他方の導電部材は導電性ワイヤが接続可能な大きさを有している。導電部材の下面は、発光装置の外面を構成するよう露出されており、これによって外部と導通させることができる。
台座部材は、傾斜面を有する導電部材上に接合されるものであり、その上に載置させる発光素子が水平になるようにするものである。
Cu−W合金などを挙げることができる。
基体は、導電部材の外縁と接し、一対の導電部材を一体的に保持するものである。本実施の形態では、図1A、図1Bに示すように、基体103は、底面及び側壁からなる凹部Sを有しており、この凹部Sの底面に導電部材101、101’の上面の一部が露出しており、基体103の裏面においても導電部材101、101’の下面が露出している。ここでは、基体103は、導電部材101、101’の外縁の全てと接するように設けているが、正負一対の電極として機能する導電部材101、101’が、それぞれ電気的に絶縁となるようにそれらの間に形成させればよく、例えば、発光装置の側面から導電部材が露出するよう、すなわち、導電部材の外縁の一部が露出して、基体と接していなくてもよい。
封止部材は、発光素子、受光素子、保護素子、更には導電性ワイヤなどの電子部品を、塵芥や水分、更には外力などから保護する部材であり、本実施の形態においては、図1A、図1Bに示すように、基体103の凹部S内に充填されている。
接合部材は、導電部材上に台座部材を接合する部材であり、他にも発光素子や保護素子などを台座部材などに接合させる部材としても用いられる。尚、ここでは、主として台座部材と導電部材との接合に用いる接合部材について説明する。
発光素子の電極と、直接又は間接的に導電部材や台座部材とを接続する導電性ワイヤは、金、銅、白金、アルミニウム等の金属及びそれらの合金を用いた導電性ワイヤが挙げられる。特に、熱抵抗などに優れた金を用いるのが好ましい。
上記封止部材中に、波長変換部材として発光素子からの光の少なくとも一部を吸収して異なる波長を有する光を発する蛍光部材を含有させることもできる。
本発明においては、発光素子として、同一面側に正負電極が形成された構造、或いは異なる面に正負電極が形成された構造、成長基板とは異なる基板を貼り合わせた構造等、種々の構造の半導体素子を用いることができる。
<製造方法>
以上のような発光装置は、以下のようにして得ることができる。
101、101’・・・導電部材
101a・・・導電部材の外縁
101b・・・導電部材の中央領域
102・・・発光素子
103・・・基体
104・・・台座部材
105・・・導電性ワイヤ
106・・・封止部材
Claims (5)
- 発光素子と、
該発光素子が載置される導電部材と、
該導電部材の外縁と接する基体と、
を有する発光装置であって、
前記導電部材の上面は、外縁から中央領域に向かって傾斜する傾斜面を有し、
該傾斜面の上に、前記発光素子が載置された平板状の台座部材の上面が水平となるようその底面が接合されてなることを特徴とする発光装置。 - 前記導電部材の上面は、前記中央領域よりも前記外縁の方が高い位置にある請求項1記載の発光装置。
- 前記導電部材の上面は、前記外縁よりも前記中央領域の方が高い位置にある請求項1記載の発光装置。
- 前記台座部材は、上面視における中心が、前記発光素子の中心と異なる位置に配されており、該発光素子の中心は、発光装置の中心に配されている請求項1乃至請求項3のいずれか1項に記載の発光装置。
- 前記導電部材は、鍍金である請求項1乃至請求項4のいずれか1項に記載の発光装置。
Priority Applications (1)
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JP2009134565A JP5229115B2 (ja) | 2009-06-04 | 2009-06-04 | 発光装置 |
Applications Claiming Priority (1)
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JP2009134565A JP5229115B2 (ja) | 2009-06-04 | 2009-06-04 | 発光装置 |
Publications (2)
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JP2010283094A JP2010283094A (ja) | 2010-12-16 |
JP5229115B2 true JP5229115B2 (ja) | 2013-07-03 |
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JP2009134565A Active JP5229115B2 (ja) | 2009-06-04 | 2009-06-04 | 発光装置 |
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JP5568457B2 (ja) | 2010-12-20 | 2014-08-06 | 日立オートモティブシステムズ株式会社 | 内燃機関の制御装置 |
JP6264634B2 (ja) * | 2013-08-21 | 2018-01-24 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびにledパッケージおよびその製造方法 |
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JP2006324408A (ja) * | 2005-05-18 | 2006-11-30 | Toyoda Gosei Co Ltd | レンズ付き発光ダイオード素子及び発光装置並びにその製造方法 |
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