JP5216892B2 - Pattern forming method using positive resist composition - Google Patents

Description

  The present invention relates to a positive resist composition used in a semiconductor manufacturing process such as an IC, a circuit board such as a liquid crystal or a thermal head, and also in a lithography process for other photo applications, and a pattern forming method using the same. It is. In particular, the present invention relates to a positive resist composition suitable for exposure by an immersion type projection exposure apparatus using far ultraviolet light having a wavelength of 300 nm or less as exposure light, and a pattern forming method using the same.

With the miniaturization of semiconductor elements, the exposure light has been shortened and the projection lens has a high numerical aperture (high NA). At present, an exposure machine with an NA of 0.84 using an ArF excimer laser having a 193 nm wavelength as a light source has been developed. ing. The resolution and the depth of focus can be expressed by the following equations as is generally well known.
(Resolving power) = k ₁ · (λ / NA)
(Depth of focus) = ± k ₂ · λ / NA ²
Here, λ is the wavelength of the exposure light source, NA is the numerical aperture of the projection lens, and k ₁ and k ₂ are coefficients related to the process.

An exposure machine using an F ₂ excimer laser having a wavelength of 157 nm as a light source has been studied for higher resolution by further shortening the wavelength. However, a lens material and a resist used in an exposure apparatus for shortening the wavelength are being studied. Because the materials used in the process are very limited, it is very difficult to stabilize the manufacturing cost and quality of the apparatus and materials, and the exposure apparatus and resist that have sufficient performance and stability within the required period are not in time. The possibility is coming out.

As a technique for increasing the resolving power in an optical microscope, a so-called immersion method in which a high refractive index liquid (hereinafter also referred to as “immersion liquid”) is filled between a projection lens and a sample is known.
This “immersion effect” means that when λ ₀ is the wavelength of the exposure light in the air, n is the refractive index of the immersion liquid with respect to the air, θ is the convergence angle of the light beam, and NA ₀ = sin θ. The above-described resolving power and depth of focus can be expressed by the following equations.
(Resolving power) = k ₁ · (λ ₀ / n) / NA ₀
(Depth of focus) = ± k ₂ · (λ ₀ / n) / NA ₀ ²
That is, the immersion effect is equivalent to using an exposure wavelength having a wavelength of 1 / n. In other words, in the case of a projection optical system with the same NA, the depth of focus can be increased n times by immersion. This is effective for all pattern shapes, and can be combined with a super-resolution technique such as a phase shift method and a modified illumination method which are currently being studied.

Examples of apparatuses in which this effect is applied to the transfer of a fine image pattern of a semiconductor element are introduced in Patent Document 1 (Japanese Patent Laid-Open No. 57-153433), Patent Document 2 (Japanese Patent Laid-Open No. 7-220990), and the like. Yes.
Recent advances in immersion exposure technology include Non-Patent Document 1 (SPIE Proc 4688, 11 (2002)), Non-Patent Document 2 (J. Vac. Sci. Tecnol. B 17 (1999)), Non-Patent Document 3 (SPIE Proc). 3999, 2 (2000)), Patent Document 3 (International Publication WO 2004-077158 Pamphlet) and the like. In the case of using an ArF excimer laser as a light source, pure water (refractive index of 1.44 at 193 nm) is considered to be most promising as an immersion liquid in terms of handling safety, transmittance at 193 nm, and refractive index. When an F ₂ excimer laser is used as a light source, a solution containing fluorine has been studied from the balance between transmittance and refractive index at 157 nm. However, sufficient products have not yet been seen in terms of environmental safety and refractive index. It has not been issued. From the degree of immersion effect and the degree of completeness of the resist, the immersion exposure technique is considered to be installed in the ArF exposure machine earliest.

Since the resist for KrF excimer laser (248 nm), an image forming method called chemical amplification has been used as an image forming method for a resist in order to compensate for sensitivity reduction due to light absorption. An example of a positive-type chemical amplification image forming method will be described. When exposed, the acid generator in the exposed area decomposes to generate an acid, and the acid generated in the exposure bake (PEB) is a reaction catalyst. Is used to change an alkali-insoluble group to an alkali-soluble group, and an exposed portion is removed by alkali development.
Although the resist for ArF excimer laser (wavelength 193 nm) using this chemical amplification mechanism is becoming mainstream at present, there is a problem that the formed line pattern collapses and becomes a defect at the time of device manufacture. It was sought after.

It is pointed out that when chemically amplified resist is applied to immersion exposure, the resist layer comes into contact with the immersion liquid at the time of exposure, so that the resist layer is altered and components that adversely affect the immersion liquid are leached from the resist layer. Has been. Patent Document 4 (International Publication WO 2004-068242 Pamphlet) describes an example in which resist performance changes by immersing a resist for ArF exposure in water before and after exposure, and points to a problem in immersion exposure. .
In the immersion exposure process, when exposure is performed using a scanning immersion exposure machine, the exposure speed decreases unless the immersion liquid moves following the movement of the lens. Concerned about giving. In the case where the immersion liquid is water, it is desirable that the resist film be hydrophobic so that water followability is better. On the other hand, if the resist film is hydrophobized, the amount of scum generated increases. There was also an adverse effect on performance, and improvements were desired.

JP-A-57-153433 JP-A-7-220990 International Publication No. 04/077158 International Publication No. 04/068242

Bulletin of International Society of Optical Engineering (Proc. SPIE), 2002, 4688, 11 J. et al. Vac. Sci. Tecnol. B 17 (1999) Bulletin of International Society of Optical Engineering (Proc. SPIE), 2000, 3999, 2nd page

  An object of the present invention is to provide a positive resist composition in which pattern profile and pattern collapse are improved and scum generation is suppressed. Another object of the present invention is to provide a positive resist composition having a good receding contact angle of an immersion liquid and suitable for immersion exposure, and a pattern forming method using the same.

〔２〕
樹脂である含フッ素化合物（Ｃ）が、（ｘ）アルカリ可溶性基を有する含フッ素化合物であることを特徴とする上記〔１〕に記載のパターン形成方法。
〔３〕
樹脂である含フッ素化合物（Ｃ）が、（ｙ）アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基を有する含フッ素化合物であることを特徴とする上記〔１〕に記載のパターン形成方法。
〔４〕
アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基（ｙ）がラクトン構造を有することを特徴とする上記〔３〕に記載のパターン形成方法。
〔５〕
樹脂である含フッ素化合物（Ｃ）が、（ｚ）酸の作用により分解する基を有する含フッ素化合物であることを特徴とする上記〔１〕に記載のパターン形成方法。
〔６〕
樹脂である含フッ素化合物（Ｃ）が、フッ素原子を有する炭素数１〜４のアルキル基、フッ素原子を有するシクロアルキル基、または、フッ素原子を有するアリール基を含有するアルカリ可溶性化合物であることを特徴とする上記〔１〕に記載のパターン形成方法。
〔７〕
樹脂である含フッ素化合物（Ｃ）がアルコール性水酸基を有し、該アルコール性水酸基のアルコール部分がフッ素化アルコールであることを特徴とする上記〔１〕〜〔６〕のいずれかに記載のパターン形成方法。
〔８〕
樹脂である含フッ素化合物（Ｃ）が下記一般式（Ｆ３）で表される構造を有することを特徴とする上記〔１〕〜〔７〕のいずれかに記載のパターン形成方法。

一般式（Ｆ３）中、
Ｒ_６２〜Ｒ_６３は各々独立してフロロアルキル基を表す。Ｒ_６２とＲ_６３は互いに連結して環を形成してもよい。
Ｒ_６４は、水素原子、フッ素原子又はアルキル基を表す。
〔９〕
樹脂である含フッ素化合物（Ｃ）が以下の（Ｃ−１）〜（Ｃ−１３）のいずれかであることを特徴とする上記〔１〕〜〔８〕のいずれかに記載のパターン形成方法。
（Ｃ−１）
フロロアルキル基を有する繰り返し単位（ａ）、および、
アルカリ可溶性基（ｘ）を含有する繰り返し単位（Ｘ）、を含有する樹脂。
（Ｃ−２）
フロロアルキル基を有する繰り返し単位（ａ）、
アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基（ｙ）を含有する繰り返し単位（Ｙ）、を含有する樹脂。
（Ｃ−３）
フロロアルキル基を有する繰り返し単位（ａ）、および、
酸の作用により分解する基（ｚ）を含有する繰り返し単位（Ｚ）、を含有する樹脂。
（Ｃ−４）
フロロアルキル基を有する繰り返し単位（ａ）、
アルカリ可溶性基（ｘ）を含有する繰り返し単位（Ｘ）、および、
アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基（ｙ）を含有する繰り返し単位（Ｙ）、を含有する樹脂。
（Ｃ−５）
フロロアルキル基を有する繰り返し単位（ａ）
アルカリ可溶性基（ｘ）を含有する繰り返し単位（Ｘ）、および、
酸の作用により分解する基（ｚ）を含有する繰り返し単位（Ｚ）を含有する樹脂。
（Ｃ−６）
フロロアルキル基を有する繰り返し単位（ａ）
アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基（ｙ）とを含有する繰り返し単位（Ｙ）、および、
酸の作用により分解する基（ｚ）を含有する繰り返し単位（Ｚ）、を含有する樹脂。
（Ｃ−７）
フロロアルキル基を有する繰り返し単位（ａ）、
アルカリ可溶性基（ｘ）を含有する繰り返し単位（Ｘ）、
アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基（ｙ）を含有する繰り返し単位（Ｙ）、および、
酸の作用により分解する基（ｚ）を含有する繰り返し単位（Ｚ）、を含有する樹脂。
（Ｃ−８）
アルカリ可溶性基（ｘ）およびフロロアルキル基をともに含有する繰り返し単位（ａＸ）を含有する樹脂。
（Ｃ−９）
アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基（ｙ）
およびフロロアルキル基をともに含有する繰り返し単位（ｂＹ）、を含有する樹脂。
（Ｃ−１０）
アルカリ可溶性基（ｘ）および炭素数１〜４のフロロアルキル基をともに含有する繰り返し単位（ａＸ）、
ならびに、アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基（ｙ）を含有する繰り返し単位（Ｙ）、を含有する樹脂。
（Ｃ−１１）
アルカリ可溶性基（ｘ）およびフロロアルキル基をともに含有する繰り返し単位（ａＸ）、ならびに、
酸の作用により分解する基（ｚ）を含有する繰り返し単位（Ｚ）、を含有する樹脂。
（Ｃ−１２）
フロロアルキル基を有する繰り返し単位（ａ）、ならびに、
アルカリ可溶性基（ｘ）およびフロロアルキル基をともに含有する繰り返し単位（ａＸ）、を含有する樹脂。
（Ｃ−１３）
フロロアルキル基を有する繰り返し単位（ａ）、ならびに、
アルカリ現像液の作用により分解し、アルカリ現像液中での溶解度が増大する基（ｙ）
およびフロロアルキル基をともに含有する繰り返し単位（ａＹ）、を含有する樹脂。
〔１０〕
樹脂である含フッ素化合物（Ｃ）の重量平均分子量が１０００〜１０００００であることを特徴とする上記〔１〕〜〔９〕のいずれかに記載のパターン形成方法。
〔１１〕
樹脂である含フッ素化合物（Ｃ）の添加量が前記ポジ型レジスト組成物の全固形分を基準として０．１〜１０質量％であることを特徴とする上記〔１〕〜〔１０〕のいずれかに記載のパターン形成方法。
〔１２〕
樹脂である含フッ素化合物（Ｃ）の添加量が前記ポジ型レジスト組成物の全固形分を基準として０．１〜５質量％であることを特徴とする上記〔１〕〜〔１１〕のいずれかに記載のパターン形成方法。
〔１３〕
前記レジスト膜の水の膜に対する後退接触角が６５°以上であることを特徴とする上記〔１〕〜〔１２〕のいずれかに記載のパターン形成方法。
〔１４〕
前記レジスト膜の水の膜に対する後退接触角が７０°以上であることを特徴とする上記〔１〕〜〔１３〕のいずれかに記載のパターン形成方法。
〔１５〕
樹脂（Ａ）がラクトン環を有する基を有する樹脂である、上記〔１〕〜〔１４〕のいずれかに記載のパターン形成方法。
〔１６〕
前記ラクトン環を有する基が、下記一般式（ＬＣ１−４）又は（ＬＣ１−５）で表されるラクトン構造を有する基である、上記〔１５〕に記載のパターン形成方法。

上記一般式中、
Ｒｂ_２は、アルキル基、シクロアルキル基、アルコキシ基、アルコキシカルボニル基、カルボキシル基、ハロゲン原子、水酸基、シアノ基又は酸分解性基を表す。
ｎ２は、０〜４の整数を表す。ｎ２が２以上の時、複数存在するＲｂ_２は同一でも異なっていてもよく、また、複数存在するＲｂ_２同士が結合して環を形成してもよい。
〔１７〕
樹脂（Ａ）が、下記一般式（ｐＩ）で表される脂環式炭化水素を含む部分構造を有する繰り返し単位を有する、上記〔１〕〜〔１６〕のいずれかに記載のパターン形成方法。

上記一般式（ｐＩ）中、
Ｒ_１１は、メチル基、エチル基、ｎ−プロピル基、イソプロピル基、ｎ−ブチル基、イソブチル基又はｓｅｃ−ブチル基を表し、Ｚは、炭素原子とともにシクロアルキル基を形成するのに必要な原子団を表す。
〔１８〕
前記一般式（ｐＩ）において、炭素原子とともにＺが形成するシクロアルキル基が、単環のシクロアルキル基である、上記〔１７〕に記載のパターン形成方法。
〔１９〕
樹脂（Ａ）が、下記一般式（ｐＩＩ）で表される脂環式炭化水素を含む部分構造を有する繰り返し単位を有する、上記〔１〕〜〔１８〕のいずれかに記載のパターン形成方法。

上記一般式（ｐＩＩ）中、
Ｒ_１２〜Ｒ_１４は、各々独立に、直鎖もしくは分岐のアルキル基又はシクロアルキル基を表し、但し、Ｒ_１２〜Ｒ_１４のうち少なくとも１つはシクロアルキル基を表す。
〔２０〕
樹脂（Ａ）が、水酸基またはシアノ基で置換された多環環状炭化水素基を有する繰り返し単位を含有することを特徴とする上記〔１〕〜〔１９〕のいずれかに記載のパターン形成方法。
〔２１〕
樹脂（Ａ）が、ラクトン環を有する（メタ）アクリレート繰り返し単位、水酸基及びシアノ基の少なくともいずれかを有する有機基を有する（メタ）アクリレート繰り返し単位、ならびに、酸分解性基を有する（メタ）アクリレート繰り返し単位、の少なくとも３成分を含有する共重合体であることを特徴とする上記〔１〕〜〔２０〕のいずれかに記載のパターン形成方法。
〔２２〕
樹脂（Ａ）が、フッ素原子を有さないことを特徴とする上記〔１〕〜〔２１〕のいずれかに記載のパターン形成方法。
〔２３〕
活性光線または放射線の照射により酸を発生する化合物（Ｂ）が、下記一般式（ＺＩ）で表される化合物である、上記〔１〕〜〔２２〕のいずれかに記載のパターン形成方法。

上記一般式（ＺＩ）において、
Ｒ_２０１、Ｒ_２０２及びＲ_２０３は、各々独立に有機基を表す。
Ｘ⁻は、非求核性アニオンを表す。
〔２４〕
前記一般式（ＺＩ）において、Ｒ_２０１、Ｒ_２０２及びＲ_２０３の全てがアリール基である、上記〔２３〕に記載のパターン形成方法。
〔２５〕
前記一般式（ＺＩ）において、非求核性アニオンＸ⁻が下記式で表される、上記〔２３〕又は〔２４〕に記載のパターン形成方法。
Ｒｃ_１−ＳＯ_３ ⁻
上記式中、Ｒｃ_１はアルキル基、アリール基、またはこれらの複数が、単結合、−Ｏ−、−ＣＯ_２−、−Ｓ−、−ＳＯ_３−若しくは−ＳＯ_２Ｎ（Ｒｄ_１）−で連結された基を表す（Ｒｄ_１は水素原子又はアルキル基を表す。）。
〔２６〕
前記一般式（ＺＩ）において、非求核性アニオンＸ⁻が下記式で表される、上記〔２３〕又は〔２４〕に記載のパターン形成方法。
Ｒｃ_３ＳＯ_２−Ｎ⁻−ＳＯ_２Ｒｃ_４
上記式中、Ｒｃ_３及びＲｃ_４は、各々独立にアルキル基、アリール基、またはこれらの複数が、単結合、−Ｏ−、−ＣＯ_２−、−Ｓ−、−ＳＯ_３−若しくは−ＳＯ_２Ｎ（Ｒｄ_１）−で連結された基を表す（Ｒｄ_１は水素原子又はアルキル基を表す。）。
Ｒｃ_３とＲｃ_４が結合して環を形成していてもよい。
〔２７〕
活性光線または放射線の照射により酸を発生する化合物（Ｂ）が、活性光線の照射によりフロロアルキル鎖を有する酸、または、フッ素原子を有するベンゼンスルホン酸、を発生する化合物であることを特徴とする上記〔１〕〜〔２２〕のいずれかに記載のパターン形成方法。
〔２８〕
活性光線または放射線の照射により酸を発生する化合物（Ｂ）が、カチオン部にフッ素置換されていないアルキル残基またはフッ素置換されていないシクロアルキル残基を有するトリフェニルスルホニウム塩化合物であることを特徴とする上記〔１〕〜〔２２〕及び〔２７〕のいずれかに記載のパターン形成方法。
〔２９〕
（Ｆ）溶剤が、プロピレングリコールモノメチルエーテルアセテートを含有する２種類以上の混合溶剤であることを特徴とする上記〔１〕〜〔２８〕のいずれかに記載のパターン形成方法。
〔３０〕
さらにフッ素系及び／又はシリコン系界面活性剤を含有することを特徴とする上記〔１〕〜〔２９〕のいずれかに記載のパターン形成方法。
〔３１〕
ポジ型レジスト組成物中の全固形分濃度が、１．０〜６．０質量％であること特徴とする上記〔１〕〜〔３０〕のいずれかに記載のパターン形成方法。
〔３２〕
１ｎｍ〜２００ｎｍの波長の光にて露光を行うことを特徴とする、上記〔１〕〜〔３１〕のいずれかに記載のパターン形成方法。
本発明は、上記〔１〕〜〔３２〕に係る発明であるが、以下、それ以外の事項についても記載している。 The present invention is a positive resist composition having the following constitution and a pattern forming method using the same, whereby the above object of the present invention is achieved.
[1]
(A) a resin whose solubility in an alkaline developer is increased by the action of an acid;
(B) a compound that generates an acid upon irradiation with an actinic ray or radiation,
(C) Fluorine-containing compound which is a resin containing at least one group selected from the following groups (x) to (z) [However, the following pentafluoroethyl acrylate (PFPA), the following ethylcyclopentyl methacrylate (ECPMA) and the following Fluorinated terpolymer particles produced by polymerizing trimethylpropane triacrylate (TMPTA) are excluded. ]:
(X) an alkali-soluble group,
(Y) a group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer;
(Z) a group that decomposes by the action of an acid,
And (F) a positive resist composition containing a solvent, and the addition amount of the fluorine-containing compound (C) as a resin is 0.1 to 30% by mass based on the total solid content of the positive resist composition. A pattern forming method comprising the steps of: forming a resist film with a positive resist composition, and performing immersion exposure and development via an immersion liquid.

[2]
The pattern forming method as described in [1] above , wherein the fluorine-containing compound (C) as a resin is (x) a fluorine-containing compound having an alkali-soluble group.
[3]
The above-mentioned [1], wherein the fluorine-containing compound (C) as a resin is (y) a fluorine-containing compound having a group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer. The pattern forming method according to 1.
[4]
The pattern forming method as described in [3] above, wherein the group (y) which is decomposed by the action of an alkali developer and increases the solubility in the alkali developer has a lactone structure.
[5]
The pattern forming method as described in [1] above , wherein the fluorine-containing compound (C), which is a resin, is a fluorine-containing compound having a group that is decomposed by the action of (z) acid.
[6]
The fluorine-containing compound (C) as a resin is an alkali-soluble compound containing an alkyl group having 1 to 4 carbon atoms having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom. The pattern forming method as described in [1] above, which is characterized by the following.
[7]
The pattern according to any one of the above [1] to [6], wherein the fluorine-containing compound (C) as a resin has an alcoholic hydroxyl group, and the alcohol part of the alcoholic hydroxyl group is a fluorinated alcohol. Forming method.
[8]
The pattern forming method as described in any one of [1] to [7] above , wherein the fluorine-containing compound (C) as a resin has a structure represented by the following general formula (F3).

In general formula (F3),
R _{62 to} R ₆₃ each independently represents a fluoroalkyl group. R ₆₂ and R ₆₃ may be connected to each other to form a ring.
R ₆₄ represents a hydrogen atom, a fluorine atom or an alkyl group.
[9]
The pattern forming method as described in any one of [1] to [8] above , wherein the fluorine-containing compound (C) as a resin is any of the following (C-1) to (C-13): .
(C-1)
A repeating unit (a) having a fluoroalkyl group, and
Resin containing repeating unit (X) containing alkali-soluble group (x).
(C-2)
A repeating unit (a) having a fluoroalkyl group,
A resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
(C-3)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-4)
A repeating unit (a) having a fluoroalkyl group,
A repeating unit (X) containing an alkali-soluble group (x), and
A resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
(C-5)
Repeating unit having a fluoroalkyl group (a)
A repeating unit (X) containing an alkali-soluble group (x), and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-6)
Repeating unit having a fluoroalkyl group (a)
A repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-7)
A repeating unit (a) having a fluoroalkyl group,
A repeating unit (X) containing an alkali-soluble group (x),
A repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-8)
A resin containing a repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group.
(C-9)
Group (y) which decomposes by the action of an alkali developer and increases the solubility in the alkali developer
And a repeating unit (bY) containing both a fluoroalkyl group.
(C-10)
A repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group having 1 to 4 carbon atoms,
And a resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
(C-11)
A repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-12)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group.
(C-13)
A repeating unit (a) having a fluoroalkyl group, and
Group (y) which decomposes by the action of an alkali developer and increases the solubility in the alkali developer
And a repeating unit (aY) containing both a fluoroalkyl group.
[10]
The pattern forming method as described in any one of [1] to [9] above , wherein the fluorine-containing compound (C) as a resin has a weight average molecular weight of 1,000 to 100,000.
[11]
Any of [1] to [10] above, wherein the addition amount of the fluorine-containing compound (C) as a resin is 0.1 to 10% by mass based on the total solid content of the positive resist composition. A pattern forming method according to any one of the above.
[12]
Any of [1] to [11] above, wherein the addition amount of the fluorine-containing compound (C) as a resin is 0.1 to 5% by mass based on the total solid content of the positive resist composition. A pattern forming method according to any one of the above.
[13]
The receding contact angle of the resist film with respect to the water film is 65 ° or more, The pattern forming method as described in any one of [1] to [12] above.
[14]
The receding contact angle of the resist film with respect to the water film is 70 ° or more, The pattern forming method according to any one of the above [1] to [13].
[15]
The pattern forming method according to any one of [1] to [14], wherein the resin (A) is a resin having a group having a lactone ring.
[16]
The pattern formation method as described in [15] above, wherein the group having a lactone ring is a group having a lactone structure represented by the following general formula (LC1-4) or (LC1-5).

In the above general formula,
Rb ₂ represents an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, a carboxyl group, a halogen atom, a hydroxyl group, a cyano group or an acid decomposable group.
n2 represents an integer of 0 to 4. When n2 is 2 or more, a plurality of Rb ₂ may be the same or different, and a plurality of Rb ₂ may be bonded to form a ring.
[17]
The pattern formation method according to any one of [1] to [16], wherein the resin (A) has a repeating unit having a partial structure containing an alicyclic hydrocarbon represented by the following general formula (pI).

In the general formula (pI),
R ₁₁ represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a sec-butyl group, and Z is an atom necessary for forming a cycloalkyl group together with a carbon atom. Represents a group.
[18]
In the general formula (pI), the pattern forming method according to the above [17], wherein the cycloalkyl group formed by Z together with the carbon atom is a monocyclic cycloalkyl group.
[19]
The pattern formation method in any one of said [1]-[18] in which resin (A) has a repeating unit which has a partial structure containing the alicyclic hydrocarbon represented by the following general formula (pII).

In the general formula (pII),
R _{12 to} R ₁₄ each independently represents a linear or branched alkyl group or a cycloalkyl group, provided that at least one of R _{12 to} R ₁₄ represents a cycloalkyl group.
[20]
Resin (A) contains the repeating unit which has a polycyclic hydrocarbon group substituted by the hydroxyl group or the cyano group, The pattern formation method in any one of said [1]-[19] characterized by the above-mentioned.
[21]
Resin (A) is a (meth) acrylate repeating unit having a lactone ring, a (meth) acrylate repeating unit having an organic group having at least one of a hydroxyl group and a cyano group, and a (meth) acrylate having an acid-decomposable group The pattern forming method as described in any one of [1] to [20] above, which is a copolymer containing at least three components of a repeating unit.
[22]
Resin (A) does not have a fluorine atom, The pattern formation method in any one of said [1]-[21] characterized by the above-mentioned.
[23]
The pattern formation method in any one of said [1]-[22] whose compound (B) which generate | occur | produces an acid by irradiation of actinic light or a radiation is a compound represented by the following general formula (ZI).

In the general formula (ZI),
R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represents an organic group.
X ⁻ represents a non-nucleophilic anion.
[24]
The pattern formation method according to the above [23], wherein in the general formula (ZI), all of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ are aryl groups.
[25]
The pattern formation method according to [23] or [24], wherein in the general formula (ZI), the non-nucleophilic anion X ⁻ is represented by the following formula.
Rc ₁ -SO ₃ ^-
In the above formula, Rc ₁ is an alkyl group, an aryl group, or a plurality of these are a single bond, —O—, —CO ₂ —, —S—, —SO ₃ — or —SO ₂ N (Rd ₁ ) —. Represents a linked group (Rd ₁ represents a hydrogen atom or an alkyl group);
[26]
The pattern formation method according to [23] or [24], wherein in the general formula (ZI), the non-nucleophilic anion X ⁻ is represented by the following formula.
^{_{Rc 3 SO 2 -N - -SO 2}} Rc 4
In the above formulas, Rc ₃ and Rc ₄ are each independently an alkyl group, an aryl group, or a plurality of these are a single bond, —O—, —CO ₂ —, —S—, —SO ₃ — or —SO _2. Represents a group linked by N (Rd ₁ ) — (Rd ₁ represents a hydrogen atom or an alkyl group).
Rc ₃ and Rc ₄ may be bonded to form a ring.
[27]
The compound (B) that generates an acid upon irradiation with actinic rays or radiation is a compound that generates an acid having a fluoroalkyl chain or a benzenesulfonic acid having a fluorine atom upon irradiation with actinic rays. The pattern forming method according to any one of [1] to [22].
[28]
The compound (B) that generates an acid upon irradiation with actinic rays or radiation is a triphenylsulfonium salt compound having an alkyl residue not substituted with fluorine or a cycloalkyl residue not substituted with fluorine in the cation moiety. The pattern forming method according to any one of [1] to [22] and [27].
[29]
(F) The pattern forming method as described in any one of [1] to [28] above, wherein the solvent is a mixed solvent of two or more containing propylene glycol monomethyl ether acetate.
[30]
The pattern forming method according to any one of [1] to [29], further comprising a fluorine-based and / or silicon-based surfactant.
[31]
The pattern forming method as described in any one of [1] to [30] above, wherein the total solid concentration in the positive resist composition is 1.0 to 6.0 mass%.
[32]
The pattern forming method according to any one of [1] to [31], wherein the exposure is performed with light having a wavelength of 1 nm to 200 nm.
Although this invention is invention which concerns on said [1]-[32], below, other matters are also described.

<1> (A) a resin whose solubility in an alkaline developer is increased by the action of an acid, (B) a compound that generates an acid upon irradiation with actinic rays or radiation, and (C) from the following groups (x) to (z): A fluorine-containing compound containing at least one selected group, and
(X) an alkali-soluble group,
(Y) a group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer;
(Z) A positive resist composition containing a group (F) that decomposes by the action of an acid.
<2>
The fluorine-containing compound (C) is an alkali-soluble compound containing (C ′) an alkyl group having 1 to 4 carbon atoms having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom. The positive resist composition as described in <1> above, wherein
<3>
The positive resist composition as described in <1> or <2> above, wherein the fluorine-containing compound (C) has an alcoholic hydroxyl group, and the alcohol part of the alcoholic hydroxyl group is a fluorinated alcohol.
<4>
The positive resist composition as described in any one of <1> to <3> above, wherein the fluorine-containing compound (C) has a structure represented by the following general formula (F3).

In general formula (F3),
R _{62 to} R ₆₃ each independently represents a fluoroalkyl group. R ₆₂ and R ₆₃ may be connected to each other to form a ring.
R ₆₄ represents a hydrogen atom, a fluorine atom or an alkyl group.
<5>
The positive resist according to any one of the above <1> to <4>, wherein the group (y) that is decomposed by the action of an alkali developer and has increased solubility in the alkali developer has a lactone structure Composition.
<6>
The positive resist composition as described in any one of <1> to <5> above, wherein the compound (C) is any one of the following (C-1) to (C-13).
(C-1)
A repeating unit (a) having a fluoroalkyl group, and
Resin containing repeating unit (X) containing alkali-soluble group (x).
(C-2)
A repeating unit (a) having a fluoroalkyl group,
A resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
(C-3)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-4)
A repeating unit (a) having a fluoroalkyl group,
A repeating unit (X) containing an alkali-soluble group (x), and
A resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
(C-5)
Repeating unit having a fluoroalkyl group (a)
A repeating unit (X) containing an alkali-soluble group (x), and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-6)
Repeating unit having a fluoroalkyl group (a)
A repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-7)
A repeating unit (a) having a fluoroalkyl group,
A repeating unit (X) containing an alkali-soluble group (x),
A repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer, and a repeating unit (Z) containing a group (z) that decomposes by the action of an acid ), A resin containing.
(C-8)
A resin containing a repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group.
(C-9)
Resin containing a repeating unit (bY) containing both a group (y) and a fluoroalkyl group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
(C-10)
A repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group having 1 to 4 carbon atoms,
And a resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
(C-11)
A repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-12)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group.
(C-13)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (aY) containing both a group (y) and a fluoroalkyl group that decomposes under the action of an alkali developer and increases the solubility in the alkali developer.
<7>
The positive resist composition as described in any one of <1> to <6> above, wherein the fluorine-containing compound (C) has a molecular weight of 1,000 to 100,000.
<8>
The positive resist composition as described in any one of <1> to <7> above, wherein the addition amount of the fluorine-containing compound (C) is 0.1 to 5% by mass.
<9>
The positive resist composition as described in any one of the above items <1> to <8>, wherein a receding contact angle with respect to the water film upon film formation is 65 ° or more.
<10>
The positive resist composition as described in any one of <1> to <9> above, wherein a receding contact angle with respect to the water film upon film formation is 70 ° or more.
<11>
The positive resist composition as described in any one of <1> to <10> above, wherein the resin (A) contains a repeating unit having a polycyclic hydrocarbon group substituted with a hydroxyl group or a cyano group. object.
<12>
Resin (A) is a (meth) acrylate repeating unit having a lactone ring, a (meth) acrylate repeating unit having an organic group having at least one of a hydroxyl group and a cyano group, and a (meth) acrylate having an acid-decomposable group The positive resist composition as described in any one of <1> to <11> above, which is a copolymer containing at least three components of repeating units.
<13>
Resin (A) does not have a fluorine atom, The positive resist composition in any one of said <1>-<12> characterized by the above-mentioned.
<14>
Compound (B) that generates an acid upon irradiation with actinic rays or radiation is a compound that generates an acid having a fluoroalkyl chain having 2 to 4 carbon atoms or a benzenesulfonic acid having a fluorine atom upon irradiation with actinic rays. The positive resist composition as described in any one of <1> to <13>, wherein the positive resist composition is present.
<15>
The compound (B) that generates an acid upon irradiation with actinic rays or radiation is a triphenylsulfonium salt compound having an alkyl residue not substituted with fluorine or a cycloalkyl residue not substituted with fluorine in the cation moiety. The positive resist composition according to any one of <1> to <14>.
<16>
(F) The positive resist composition as described in any one of <1> to <15> above, wherein the solvent is a mixed solvent of two or more containing propylene glycol monomethyl ether acetate.
<17>
The positive resist composition as described in any one of <1> to <16> above, further comprising a fluorine-based and / or silicon-based surfactant.
<18>
The positive resist composition as described in any one of <1> to <17> above, wherein the total solid concentration in the positive resist composition is 1.0 to 6.0% by mass.
<19>
The pattern formation method characterized by including the process of forming a resist film with the resist composition in any one of said <1>-<18>, exposing and developing.
<20>
The pattern forming method as described in <19> above, wherein the exposure is performed with light having a wavelength of 1 nm to 200 nm.
<21>
The pattern forming method as described in <19> or <20> above, wherein the exposure is immersion exposure performed through an immersion liquid.
<22>
Resin (C1) having a structure represented by the following formula.

In formulas (CI) to (CIII),
Each X independently represents a hydrogen atom, a halogen atom, or an alkyl group.
Rf is a group having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom.
Y represents an alkylene group, a divalent linking group having an alicyclic hydrocarbon structure, a single bond, an ether group, an ester group, a carbonyl group, a carboxyl group, or a divalent group obtained by combining these.
V represents a group having a lactone ring.
Each Rc independently represents an unsubstituted hydrocarbon group. However, Rc does not include a hetero atom.
m, n, and p each represent a number that satisfies the following relationship.
m + n + p = 100, 0 <m <100, 0 <n <100, 0 ≦ p <100.
<23>
Resin (C2) having a structure represented by the following formula.

In formulas (CI), (CIV), (CIII),
Each X independently represents a hydrogen atom, a halogen atom, or an alkyl group.
Rf is a group having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom.
Y represents an alkylene group, a divalent linking group having an alicyclic hydrocarbon structure, a single bond, an ether group, an ester group, a carbonyl group, a carboxyl group, or a divalent group obtained by combining these.
Rp ₁ represents a group that is decomposed by the action of an acid.
Each Rc independently represents an unsubstituted hydrocarbon group. However, Rc does not include a hetero atom.
m, n, and p each represent a number that satisfies the following relationship.
m + n + p = 100, 0 <m <100, 0 <n <100, 0 ≦ p <100.

  INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a positive resist composition suitable for immersion exposure having a good pattern profile, pattern collapse, scum performance, and excellent immersion liquid receding contact angle, and a pattern forming method using the same.

It is the schematic of receding contact angle. It is the schematic which shows the state which is evaluating the water followability to a quartz plate. It is the schematic which shows the water followability to a quartz plate.

Hereinafter, the present invention will be described in detail.
In addition, in the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes what does not have a substituent and what has a substituent. . For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

(A) Resin whose solubility in an alkaline developer increases due to the action of an acid The resin used in the resist composition of the present invention decomposes due to the action of an acid and increases in solubility in an alkaline developer (acid-decomposable resin) A resin having a group (hereinafter also referred to as “acid-decomposable group”) that decomposes by the action of an acid to generate an alkali-soluble group in the main chain or side chain of the resin, or in both the main chain and the side chain. (Hereinafter also referred to as resin (A)). The resin (A) is preferably an alicyclic hydrocarbon-based acid-decomposable resin having a monocyclic or polycyclic alicyclic hydrocarbon structure.
Alkali-soluble groups include phenolic hydroxyl groups, carboxylic acid groups, fluorinated alcohol groups, sulfonic acid groups, sulfonamido groups, sulfonylimide groups, (alkylsulfonyl) (alkylcarbonyl) methylene groups, (alkylsulfonyl) (alkylcarbonyl) Imido group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, tris (alkylsulfonyl) methylene group A group having
Preferred alkali-soluble groups include carboxylic acid groups, fluorinated alcohol groups (preferably hexafluoroisopropanol), and sulfonic acid groups.
A preferred group as an acid-decomposable group (acid-decomposable group) is a group obtained by substituting the hydrogen atom of these alkali-soluble groups with a group capable of leaving with an acid.
The acid-decomposable group is preferably a cumyl ester group, an enol ester group, an acetal ester group, a tertiary alkyl ester group or the like. More preferably, it is a tertiary alkyl ester group.

  The resin (A) includes a repeating unit having a partial structure containing an alicyclic hydrocarbon represented by the following general formula (pI) to general formula (pV) and a repeating unit represented by the following general formula (II-AB). A resin containing at least one selected from the group is preferred.

In general formulas (pI) to (pV),
R ₁₁ represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a sec-butyl group, and Z is an atom necessary for forming a cycloalkyl group together with a carbon atom. Represents a group.
R _{12 to} R ₁₆ each independently represent a linear or branched alkyl group or cycloalkyl group having 1 to 4 carbon atoms, provided that at least one of R _{12 to} R ₁₄ , or R ₁₅ , Any of R ₁₆ represents a cycloalkyl group.
R _{17 to} R ₂₁ each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a cycloalkyl group, provided that at least one of R _{17 to} R ₂₁ is cyclo Represents an alkyl group. Further, any one of R ₁₉ and R ₂₁ represents a linear or branched alkyl group or cycloalkyl group having 1 to 4 carbon atoms.
R _{22 to} R ₂₅ each independently represent a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a cycloalkyl group, provided that at least one of R _{22 to} R ₂₅ is cyclo Represents an alkyl group. R ₂₃ and R ₂₄ may be bonded to each other to form a ring.

In the formula (II-AB),
R ₁₁ ′ and R ₁₂ ′ each independently represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group.
Z ′ represents an atomic group for forming an alicyclic structure containing two bonded carbon atoms (C—C).

  The general formula (II-AB) is more preferably the following general formula (II-AB1) or general formula (II-AB2).

In the formula (II-AB1) (II-AB2),
R ₁₃ ′ to R ₁₆ ′ each independently represents a hydrogen atom, a halogen atom, a cyano group, —COOH, —COOR ₅ , a group that decomposes by the action of an acid, —C (═O) —XA′—R. ₁₇ 'represents an alkyl group or a cycloalkyl group.
Here, R ₅ represents an alkyl group, a cycloalkyl group, or a group having a lactone structure.
X represents an oxygen atom, a sulfur atom, -NH -, - NHSO ₂ - or an -NHSO ₂ NH-.
A ′ represents a single bond or a divalent linking group.
In addition, at least two of R ₁₃ ′ to R ₁₆ ′ may combine to form a ring.
n represents 0 or 1.
R ₁₇ ′ represents —COOH, —COOR ₅ , —CN, a hydroxyl group, an alkoxy group, —CO—NH—R ₆ , —CO—NH—SO ₂ —R ₆ or a group having a lactone structure.
R ₆ represents an alkyl group or a cycloalkyl group.

In the general formulas (pI) to (pV), the alkyl group in R _{12 to} R ₂₅ represents a linear or branched alkyl group having 1 to 4 carbon atoms.

The cycloalkyl group in R _{11 to} R ₂₅ or the cycloalkyl group formed by Z and the carbon atom may be monocyclic or polycyclic. Specific examples include groups having a monocyclo, bicyclo, tricyclo, tetracyclo structure or the like having 5 or more carbon atoms. The carbon number is preferably 6-30, and particularly preferably 7-25. These cycloalkyl groups may have a substituent.

  Preferred cycloalkyl groups include adamantyl group, noradamantyl group, decalin residue, tricyclodecanyl group, tetracyclododecanyl group, norbornyl group, cedrol group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, A cyclodecanyl group and a cyclododecanyl group can be mentioned. More preferable examples include an adamantyl group, norbornyl group, cyclohexyl group, cyclopentyl group, tetracyclododecanyl group, and tricyclodecanyl group.

  These alkyl groups and cycloalkyl groups may further have a substituent. Examples of further substituents include an alkyl group (1 to 4 carbon atoms), a halogen atom, a hydroxyl group, and an alkoxy group (1 to 4 carbon atoms). ), A carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). Examples of the substituent that the alkyl group, alkoxy group, alkoxycarbonyl group and the like may further have include a hydroxyl group, a halogen atom, and an alkoxy group.

  The structures represented by the general formulas (pI) to (pV) in the resin can be used for protecting alkali-soluble groups.

  As the repeating unit having an alkali-soluble group protected by the structure represented by the general formulas (pI) to (pV), a repeating unit represented by the following general formula (pA) is preferable.

In general formula (pA),
R represents a hydrogen atom, a halogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms. A plurality of R may be the same or different.
A represents a single bond, an alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amide group, a sulfonamide group, a urethane group, or a urea group, or a combination of two or more groups. Represents. A single bond is preferable.
Rp1 represents any group of the above formulas (pI) to (pV).

  The repeating unit represented by the general formula (pA) is most preferably a repeating unit of 2-alkyl-2-adamantyl (meth) acrylate and dialkyl (1-adamantyl) methyl (meth) acrylate.

  Specific examples of the repeating unit represented by the general formula (pA) are shown below.

Examples of the halogen atom in R ₁₁ ′ and R ₁₂ ′ include a chlorine atom, a bromine atom, a fluorine atom, and an iodine atom.

Examples of the alkyl group in R ₁₁ ′ and R ₁₂ ′ include a linear or branched alkyl group having 1 to 10 carbon atoms.

  The atomic group for forming the alicyclic structure of Z ′ is an atomic group that forms a repeating unit of an alicyclic hydrocarbon which may have a substituent in a resin, and among them, a bridged type alicyclic group. An atomic group for forming a bridged alicyclic structure forming a cyclic hydrocarbon repeating unit is preferred.

Examples of the skeleton of the alicyclic hydrocarbon formed include the same alicyclic hydrocarbon groups as R _{11 to} R _{25 in} the general formulas (pI) to (pV).

The alicyclic hydrocarbon skeleton may have a substituent. Examples of such a substituent include R ₁₃ ′ to R ₁₆ ′ in the general formula (II-AB1) or (II-AB2).

  In the resin (A) according to the present invention, the group capable of decomposing by the action of an acid is a repeating unit having a partial structure containing an alicyclic hydrocarbon represented by the general formula (pI) to the general formula (pV), It can contain in at least 1 sort (s) of a repeating unit represented by a formula (II-AB), and the repeating unit of a postscript copolymerization component.

Various substituents of R ₁₃ ′ to R ₁₆ ′ in the general formula (II-AB1) or the general formula (II-AB2) are atomic groups for forming an alicyclic structure in the general formula (II-AB). It can also be a substituent of the atomic group Z for forming a bridged alicyclic structure.

  Specific examples of the repeating unit represented by the general formula (II-AB1) or (II-AB2) include the following specific examples, but the present invention is not limited to these specific examples.

The resin (A) of the present invention preferably has a group having a lactone ring. As the group having a lactone ring, any group having a lactone ring can be used, but a group having a 5- to 7-membered ring lactone structure is preferred. A structure in which another ring structure is condensed to form a structure or a spiro structure is preferable. A group having a lactone structure represented by any of the following general formulas (LC1-1) to (LC1-16) is more preferable. Further, a group having a lactone structure may be directly bonded to the main chain. Preferred lactone structures are (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13), and (LC1-14). Edge roughness and development defects are improved.

The lactone structure portion may or may not have a substituent (Rb ₂ ). Preferred substituents (Rb ₂ ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 8 carbon atoms, and a carboxyl group. , Halogen atom, hydroxyl group, cyano group, acid-decomposable group and the like. n2 represents an integer of 0 to 4. When n2 is 2 or more, a plurality of Rb ₂ may be the same or different, and a plurality of Rb ₂ may be bonded to form a ring.

Examples of the repeating unit having a group having a lactone structure represented by any one of the general formulas (LC1-1) to (LC1-16) include R _{13 in the} above general formula (II-AB1) or (II-AB2). At least one of 'to R ₁₆ ' has a group represented by general formula (LC1-1) to (LC1-16) (for example, R _{5 of} -COOR ₅ is represented by general formula (LC1-1) to (LC1 -16) or a repeating unit represented by the following general formula (AI).

In general formula (AI),
R _b0 represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. Preferable substituents that the alkyl group for R _b0 may have include a hydroxyl group and a halogen atom.

Examples of the halogen atom for R _b0 include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. R _b0 is preferably a hydrogen atom or a methyl group.

_Ab is an alkylene group, a divalent linking group having a monocyclic or polycyclic alicyclic hydrocarbon structure, a single bond, an ether group, an ester group, a carbonyl group, a carboxyl group, or a divalent group obtained by combining these. Represents. A single bond and a linking group represented by -Ab ₁ -CO _2- are preferred.
Ab ₁ is a linear, branched alkylene group, monocyclic or polycyclic cycloalkylene group, preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group, or a norbornylene group.

  V represents a group represented by any one of the general formulas (LC1-1) to (LC1-16).

The repeating unit having a lactone structure usually has an optical isomer, but any optical isomer may be used. One optical isomer may be used alone, or a plurality of optical isomers may be mixed and used. When one kind of optical isomer is mainly used, the optical purity (ee) thereof is preferably 90 or more, more preferably 95 or more.
Specific examples of the repeating unit having a group having a lactone structure are given below, but the present invention is not limited thereto.

The resin (A) of the present invention preferably contains a repeating unit having an alicyclic hydrocarbon structure substituted with a polar group. This improves the substrate adhesion and developer compatibility. The polar group is preferably a hydroxyl group or a cyano group.
More preferably, the resin (A) contains a repeating unit having a polycyclic hydrocarbon group substituted with a hydroxyl group or a cyano group.
Preferred examples of the alicyclic hydrocarbon structure substituted with a polar group include structures represented by general formulas (VIIa) and (VIIb).

In General Formula (VIIa), R _{2c to} R _4c each independently represent a hydrogen atom, a hydroxyl group, or a cyano group. However, at least one of R _{2c to} R _4c represents a hydroxyl group or a cyano group. Preferably, one or two of R _{2c to} R _4c are a hydroxyl group and the remaining is a hydrogen atom, more preferably two of R _{2c to} R _4c are a hydroxyl group and the remaining is a hydrogen atom.

  The group represented by the general formula (VIIa) or (VIIb) is preferably a dihydroxy form or a monohydroxy form, and more preferably a dihydroxy form.

As the repeating unit having a group represented by the general formula (VIIa) or (VIIb), at least one of R ₁₃ ′ to R ₁₆ ′ in the general formula (II-AB1) or (II-AB2) is the above. Those having a group represented by the general formula (VIIa) or (VIIb) (for example, R _{5 in} —COOR ₅ represents a group represented by the general formula (VIIa) or (VIIb)), or the following general formula (AIIa ) To (AIId).

In general formulas (AIIa) to (AIId),
R _1c independently represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
R _{2c to} R _4c each independently represents a hydrogen atom, a hydroxyl group or a cyano group. However, at least one of R _{2c to} R _4c represents a hydroxyl group or a cyano group. Preferably, one or two of R _{2c to} R _4c are a hydroxyl group and the remaining is a hydrogen atom, more preferably two of R _{2c to} R _4c are a hydroxyl group and the remaining is a hydrogen atom.

  Although the specific example of the repeating unit which has a structure represented by general formula (AIIa)-(AIId) is given to the following, this invention is not limited to these.

  The resin (A) of the present invention may contain a repeating unit represented by the following general formula (VIII).

In the general formula (VIII), Z ₂ represents —O— or —N (R ₄₁ ) —. R ₄₁ represents a hydrogen atom, a hydroxyl group, an alkyl group, or —OSO ₂ —R ₄₂ . R ₄₂ represents an alkyl group, a cycloalkyl group or a camphor residue. The alkyl group of R ₄₁ and R ₄₂ may be substituted with a halogen atom (preferably a fluorine atom) or the like.

  Examples of the repeating unit represented by the general formula (VIII) include the following specific examples, but the present invention is not limited thereto.

  The resin (A) of the present invention preferably has a repeating unit having an alkali-soluble group, and more preferably has a repeating unit having a carboxyl group. By containing this, the resolution in contact hole applications increases. The repeating unit having a carboxyl group includes a repeating unit in which a carboxyl group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid or methacrylic acid, or a carboxyl group in the main chain of the resin through a linking group. Any of the bonded repeating units is preferable, and the linking group may have a monocyclic or polycyclic hydrocarbon structure. Most preferred are acrylic acid and methacrylic acid.

  The resin (A) of the present invention may further have a repeating unit having 1 to 3 groups represented by the general formula (F1). This improves line edge roughness performance.

In formula _{(F1), R} 50 ~R ₅₅ independently represents a hydrogen atom, a fluorine atom or an alkyl group. However, at least one of R _{50 to} R ₅₅ represents a fluorine atom or an alkyl group (fluoroalkyl group) in which at least one hydrogen atom is substituted with a fluorine atom. Rx represents a hydrogen atom or an organic group (preferably an acid-decomposable protecting group, an alkyl group, a cycloalkyl group, an acyl group, or an alkoxycarbonyl group).

The alkyl group of R _{50 to} R ₅₅ may be substituted with a halogen atom such as a fluorine atom, a cyano group, or the like, and preferably an alkyl group having 1 to 3 carbon atoms, such as a methyl group or a trifluoromethyl group. be able to. R _{50 to} R ₅₅ are preferably all fluorine atoms.

  Examples of the organic group represented by Rx include an acid-decomposable protective group and an optionally substituted alkyl group, cycloalkyl group, acyl group, alkylcarbonyl group, alkoxycarbonyl group, alkoxycarbonylmethyl group, alkoxymethyl group. , 1-alkoxyethyl group is preferable.

  The repeating unit having the general formula (F1) is preferably a repeating unit represented by the following general formula (F2).

In the formula, Rx represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms. Preferable substituents that the alkyl group of Rx may have include a hydroxyl group and a halogen atom.
Fa represents a single bond or a linear or branched alkylene group, preferably a single bond.
Fb represents a monocyclic or polycyclic hydrocarbon group.
Fc represents a single bond or a linear or branched alkylene group (preferably a single bond or a methylene group).
F ₁ represents a group represented by the general formula (F1).
p ₁ is an integer of 1 to 3.
The cyclic hydrocarbon group for Fb is preferably a cyclopentyl group, a cyclohexyl group, or a norbornyl group.
Specific examples of the repeating unit having the structure of the general formula (F1) are shown.

  The resin (A) of the present invention may further contain a repeating unit having an alicyclic hydrocarbon structure and not exhibiting acid decomposability. This can reduce the elution of low molecular components from the resist film to the immersion liquid during immersion exposure. Examples of such a repeating unit include 1-adamantyl (meth) acrylate, tricyclodecanyl (meth) acrylate, and cyclohexyl (meth) acrylate.

  It is preferable that resin (A) does not have a fluorine atom from a compatible viewpoint.

  The resin (A) of the present invention has, in addition to the above repeating structural units, dry etching resistance, standard developer suitability, substrate adhesion, resist profile, and general required characteristics of resist, resolving power, heat resistance, sensitivity. Various repeating structural units can be contained for the purpose of adjusting the above.

  Examples of such repeating structural units include, but are not limited to, repeating structural units corresponding to the following monomers.

  As a result, the performance required for the resin (A), in particular, (1) solubility in coating solvents, (2) film-forming properties (glass transition point), (3) alkali developability, (4) film slipping (familiarity) Fine adjustments such as (selection of aqueous and alkali-soluble groups), (5) adhesion of unexposed portions to the substrate, and (6) dry etching resistance are possible.

  As such a monomer, for example, a compound having one addition polymerizable unsaturated bond selected from acrylic acid esters, methacrylic acid esters, acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, etc. Etc.

  In addition, any addition-polymerizable unsaturated compound that can be copolymerized with monomers corresponding to the above various repeating structural units may be copolymerized.

  In the resin (A), the molar ratio of each repeating structural unit is the resist dry etching resistance, standard developer suitability, substrate adhesion, resist profile, and the general required performance of the resist, resolving power, heat resistance, sensitivity. It is set appropriately in order to adjust etc.

The following are mentioned as a preferable aspect of resin (A) of this invention.
(1) What contains the repeating unit which has a partial structure containing the alicyclic hydrocarbon represented by said general formula (pI)-(pV) (side chain type). Preferably those containing (meth) acrylate repeating units having a structure of (pI) to (pV).
(2) Containing repeating unit represented by general formula (II-AB) (main chain type) However, in (2), the following are further exemplified.
(3) A repeating unit represented by the general formula (II-AB), a maleic anhydride derivative and a (meth) acrylate structure (hybrid type)
In the resin (A), the content of the repeating unit having an acid-decomposable group is preferably 10 to 60 mol%, more preferably 20 to 50 mol%, still more preferably 25 to 40 mol% in all repeating structural units. is there.

  In the resin (A), the content of the repeating unit having a partial structure containing the alicyclic hydrocarbon represented by the general formulas (pI) to (pV) is preferably 25 to 70 mol% in all the repeating structural units, More preferably, it is 35-65 mol%, More preferably, it is 40-60 mol%.

  In the resin (A), the content of the repeating unit represented by the general formula (II-AB) is preferably 10 to 70 mol%, more preferably 15 to 65 mol%, still more preferably 25 in all repeating structural units. ~ 60 mol%.

  In addition, the content of the repeating structural unit based on the monomer of the further copolymer component in the resin can also be appropriately set according to the performance of the desired resist. ) To (pV) is preferably 99 mol% or less based on the total of the repeating structural unit having a partial structure containing an alicyclic hydrocarbon and the repeating unit represented by the general formula (II-AB), More preferably, it is 90 mol% or less, More preferably, it is 80 mol% or less.

When the composition of the present invention is for ArF exposure, the resin preferably has no aromatic group from the viewpoint of transparency to ArF light.
Resin (A) is a three-component copolymer of (meth) acrylate having a lactone ring, (meth) acrylate having an organic group having at least one of a hydroxyl group and a cyano group, and (meth) acrylate having an acid-decomposable group. It is preferably a polymer.
More preferably, the resin (A) used in the present invention is one in which all of the repeating units are composed of (meth) acrylate repeating units. In this case, all of the repeating units may be methacrylate, all of the repeating units may be acrylate, or a mixture of methacrylate / acrylate, but the acrylate repeating unit is preferably 50 mol% or less of the entire repeating unit. More preferably 25 to 50% of repeating units having a partial structure containing an alicyclic hydrocarbon represented by general formulas (pI) to (pV), 25 to 50% of repeating units containing the lactone structure, and the polar group 5 to 20% of a terpolymer having 5 to 30% of repeating units having an alicyclic hydrocarbon structure substituted with, or 5 to 20 of repeating units containing a carboxyl group or a structure represented by formula (F1). % Quaternary copolymer.

  The polymer or copolymer used in the present invention is preferably in the range of a weight average molecular weight of 1500 to 100,000, more preferably in the range of 2000 to 70000, and particularly preferably in the range of 3000 to 50000.

The resin (A) used in the present invention can be synthesized according to a conventional method (for example, radical polymerization). For example, as a general synthesis method, a monomer polymerization method in which a monomer species and an initiator are dissolved in a solvent and the polymerization is performed by heating, and a solution of the monomer species and the initiator is dropped into the heating solvent over 1 to 10 hours. The dropping polymerization method is added, and the dropping polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane, diisopropyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate, amide solvents such as dimethylformamide and dimethylacetamide, Furthermore, the solvent which melt | dissolves the composition of this invention like the below-mentioned propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone is mentioned. More preferably, the polymerization is performed using the same solvent as that used in the resist composition of the present invention. Thereby, generation | occurrence | production of the particle at the time of a preservation | save can be suppressed.
The polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon. As a polymerization initiator, a commercially available radical initiator (azo initiator, peroxide, etc.) is used to initiate the polymerization. As the radical initiator, an azo initiator is preferable, and an azo initiator having an ester group, a cyano group, or a carboxyl group is preferable. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile, dimethyl 2,2′-azobis (2-methylpropionate) and the like. If desired, an initiator is added or added in portions, and after completion of the reaction, it is put into a solvent and a desired polymer is recovered by a method such as powder or solid recovery. The concentration of the reaction is 5 to 50% by mass, preferably 10 to 30% by mass. The reaction temperature is usually 10 ° C to 150 ° C, preferably 30 ° C to 120 ° C, more preferably 50 to 100 ° C.

  In the present invention, the addition amount of the resin (A) in the photosensitive composition is 50 to 99.7% by mass, preferably 70 to 99.5% by mass, based on the total solid content. In addition to the resin in the present invention, other resins can be used as necessary. In the composition of the present invention, the preferred range of use of other resins can be mixed at a ratio of 70 parts by mass or less, particularly preferably 50 parts by mass or less, per 100 parts by mass of the resin (A) in the present invention.

(B) Compound that generates acid upon irradiation with actinic ray or radiation The photosensitive composition of the present invention contains a compound that generates acid upon irradiation with actinic ray or radiation (also referred to as component (B) or compound (B)). To do.
Examples of such photoacid generators include photoinitiators for photocationic polymerization, photoinitiators for photoradical polymerization, photodecolorants for dyes, photochromic agents, actinic rays used in microresists, etc. Known compounds that generate an acid upon irradiation with radiation and mixtures thereof can be appropriately selected and used.

  Examples thereof include diazonium salts, phosphonium salts, sulfonium salts, iodonium salts, imide sulfonates, oxime sulfonates, diazodisulfones, disulfones, and o-nitrobenzyl sulfonates.

  Further, a group that generates an acid upon irradiation with these actinic rays or radiation, or a compound in which a compound is introduced into the main chain or side chain of the polymer, for example, US Pat. No. 3,849,137, German Patent No. 3914407. JP, 63-26653, JP, 55-164824, JP, 62-69263, JP, 63-146038, JP, 63-163452, JP, 62-153853, The compounds described in JP-A 63-146029 can be used.

  Further, compounds capable of generating an acid by light described in US Pat. No. 3,779,778, European Patent 126,712 and the like can also be used.

The component (B) is preferably a compound that generates an acid having a fluoroalkyl chain (preferably having 2 to 4 carbon atoms) or a benzenesulfonic acid having a fluorine atom upon irradiation with actinic rays.
In addition, the component (B) is a trivalent cation having an alkyl residue that is not fluorine-substituted (preferably having 1 to 15 carbon atoms) or a cycloalkyl residue that is not fluorine-substituted (preferably having 3 to 15 carbon atoms). A phenylsulfonium salt compound is preferred.

  Among the compounds that decompose upon irradiation with actinic rays or radiation to generate an acid, compounds represented by the following general formulas (ZI), (ZII), and (ZIII) can be exemplified.

In the general formula (ZI), R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represents an organic group.
X ⁻ represents a non-nucleophilic anion, preferably sulfonate anion, carboxylate anion, bis (alkylsulfonyl) amide anion, tris (alkylsulfonyl) methide anion, BF ₄ ⁻ , PF ₆ ⁻ , SbF ₆ ^{— and the} like. Preferably, it is an organic anion containing a carbon atom.
Preferable organic anions include organic anions represented by the following formula.

In the formula, Rc ₁ represents an organic group.
Is mentioned is preferably an alkyl group which may be substituted having a carbon number of 1 to 3 0 as an organic group in rc _1, an aryl group, or a plurality, a single bond, -O -, - CO 2 - , - _{S -, - SO 3 -,} - SO 2 N (Rd 1) - can be exemplified linked group a linking group such as. Rd ₁ represents a hydrogen atom or an alkyl group.
Rc ₃ , Rc ₄ and Rc ₅ represent an organic group. _{Rc 3,} Rc 4, as preferred organic groups Rc ₅ may be mentioned the same as the preferred organic groups which definitive in rc _1, and most preferably a perfluoroalkyl group having 1 to 4 carbon atoms.
Rc ₃ and Rc ₄ may be bonded to form a ring.
Examples of the group formed by combining Rc ₃ and Rc ₄ include an alkylene group and an arylene group. Preferably, it is a C2-C4 perfluoroalkylene group.
The organic group of Rc ₁ and Rc _{3 to} Rc ₅ is most preferably an alkyl group substituted at the _1- position with a fluorine atom or a fluoroalkyl group, or a phenyl group substituted with a fluorine atom or a fluoroalkyl group. By having a fluorine atom or a fluoroalkyl group, the acidity of the acid generated by light irradiation is increased and the sensitivity is improved. Further, when Rc ₃ and Rc ₄ are bonded to form a ring, the acidity of the acid generated by light irradiation is increased, and the sensitivity is improved.

The carbon number of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is generally 1 to 30, preferably 1 to 20.
Two of R _{201 to} R ₂₀₃ may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group.
Examples of the group formed by combining two of R _{201 to} R ₂₀₃ include an alkylene group (eg, butylene group, pentylene group).
Specific examples of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ include corresponding groups in the compounds (Z1-1), (Z1-2) and (Z1-3) described later.

In addition, the compound which has two or more structures represented by general formula (ZI) may be sufficient. For example, the general formula at least one of _R 201 _{to R 203} of a compound represented by (ZI) is, at least one bond with structure of _R 201 _{to R 203} of another compound represented by formula (ZI) It may be a compound.

  More preferable examples of the (ZI) component include compounds (Z1-1), (Z1-2), and (Z1-3) described below.

Compound (Z1-1) is at least one of the aryl groups _R 201 _{to R 203} in formula (ZI), arylsulfonium compound, i.e., a compound having arylsulfonium as a cation.
In the arylsulfonium compound, all of R _{201 to} R ₂₀₃ may be an aryl group, or a part of R _{201 to} R ₂₀₃ may be an aryl group with the remaining being an alkyl group.
Examples of the arylsulfonium compound include a triarylsulfonium compound, a diarylalkylsulfonium compound, and an aryldialkylsulfonium compound.
The aryl group of the arylsulfonium compound is preferably an aryl group such as a phenyl group or a naphthyl group, or a heteroaryl group such as an indole residue or a pyrrole residue, more preferably a phenyl group or an indole residue. When the arylsulfonium compound has two or more aryl groups, the two or more aryl groups may be the same or different.
The alkyl group that the arylsulfonium compound has as necessary is preferably a linear, branched or cyclic alkyl group having 1 to 15 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an n-butyl group, sec. -Butyl group, t-butyl group, cyclopropyl group, cyclobutyl group, cyclohexyl group and the like can be mentioned.
The aryl group and alkyl group of R _{201 to} R ₂₀₃ are an alkyl group (for example, 1 to 15 carbon atoms), an aryl group (for example, 6 to 14 carbon atoms), an alkoxy group (for example, 1 to 15 carbon atoms), a halogen atom, and a hydroxyl group And may have a phenylthio group as a substituent. Preferred substituents are linear, branched or cyclic alkyl groups having 1 to 12 carbon atoms, linear, branched or cyclic alkoxy groups having 1 to 12 carbon atoms, most preferably alkyl groups having 1 to 4 carbon atoms, It is a C1-C4 alkoxy group. The substituent may be substituted with any one of three R _{201 to} R ₂₀₃ , or may be substituted with all three. When R _{201 to} R ₂₀₃ are an aryl group, the substituent is preferably substituted at the p-position of the aryl group.

Next, the compound (Z1-2) will be described.
Compound (Z1-2) is a compound in the case where R _{201 to} R ₂₀₃ in formula (ZI) each independently represents an organic group containing no aromatic ring. Here, the aromatic ring includes an aromatic ring containing a hetero atom.
The organic group not containing an aromatic ring as R _{201 to} R ₂₀₃ generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.
R _{201 to} R ₂₀₃ are each independently preferably an alkyl group, a 2-oxoalkyl group, an alkoxycarbonylmethyl group, an allyl group, or a vinyl group, more preferably a linear, branched, or cyclic 2-oxoalkyl group, An alkoxycarbonylmethyl group, most preferably a linear, branched 2-oxoalkyl group.

The alkyl group as R ₂₀₁ to R ₂₀₃ may be linear, branched, or cyclic, preferably a linear or branched alkyl group (e.g., methyl group having 1 to 10 carbon atoms, an ethyl group, a propyl Group, butyl group, pentyl group) and cyclic alkyl groups having 3 to 10 carbon atoms (cyclopentyl group, cyclohexyl group, norbornyl group).
The 2-oxoalkyl group as R _{201 to} R ₂₀₃ may be linear, branched or cyclic, and preferably includes a group having> C═O at the 2-position of the above alkyl group. it can.
The alkoxy group in the alkoxycarbonylmethyl group as R _{201 to} R ₂₀₃ is preferably an alkoxy group having 1 to 5 carbon atoms (methoxy group, ethoxy group, propoxy group, butoxy group, pentoxy group).
R _{201 to} R ₂₀₃ may be further substituted with a halogen atom, an alkoxy group (eg, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group.
Two members out of R _{201 to} R ₂₀₃ may combine to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group. Examples of the group formed by combining two of R _{201 to} R ₂₀₃ include an alkylene group (eg, butylene group, pentylene group).

  The compound (Z1-3) is a compound represented by the following general formula (Z1-3), and is a compound having a phenacylsulfonium salt structure.

R _{1c to} R _5c each independently represents a hydrogen atom, an alkyl group, an alkoxy group, or a halogen atom.
R _6c and R _7c represent a hydrogen atom or an alkyl group.
Rx and Ry each independently represents an alkyl group, a 2-oxoalkyl group, an alkoxycarbonylmethyl group, an allyl group, or a vinyl group.
Any two or more of R _{1c to} R _5c , and R _x and R _y may be bonded to each other to form a ring structure, and this ring structure includes an oxygen atom, a sulfur atom, an ester bond, and an amide bond. May be included.

The alkyl group as R _{1c to} R _{5c may} be linear, branched or cyclic, for example, an alkyl group having 1 to 20 carbon atoms, preferably a linear or branched alkyl having 1 to 12 carbon atoms. Group (for example, methyl group, ethyl group, linear or branched propyl group, linear or branched butyl group, linear or branched pentyl group), C3-C8 cyclic alkyl group (for example, cyclopentyl group, cyclohexyl group) ).
The alkoxy group as R _{1c to} R _{5c may} be linear, branched or cyclic, for example, an alkoxy group having 1 to 10 carbon atoms, preferably a linear or branched alkoxy group having 1 to 5 carbon atoms. (For example, methoxy group, ethoxy group, linear or branched propoxy group, linear or branched butoxy group, linear or branched pentoxy group), C3-C8 cyclic alkoxy group (for example, cyclopentyloxy group, cyclohexyloxy group) ).
Preferably either a straight chain of _R 1c _{to R 5c,} branched, cyclic alkyl group, or a linear, branched or cyclic alkoxy group, more preferably the sum of the carbon atoms of _{R 5c} from _{R 1c} 2 to 15 It is. Thereby, solvent solubility improves more and generation | occurrence | production of a particle is suppressed at the time of a preservation | save.

_Examples of the alkyl group as R _x and R _y include the same alkyl groups as R _{1c to} R _5c .
Examples of the 2-oxoalkyl group include a group having> C═O at the 2-position of the alkyl group as R _{1c to} R _5c .
The alkoxy group in the alkoxycarbonylmethyl group may be the same as the alkoxy group as R _1c to R _5c.
Examples of the group formed by combining R _x and R _y include a butylene group and a pentylene group.

R _x and R _y are preferably an alkyl group having 4 or more carbon atoms, more preferably 6 or more, and still more preferably 8 or more.

In formula _{(ZII), (ZIII),} R 204 ~R 207 each independently represents an alkyl group which may have an optionally substituted aryl group or a substituent.
The aryl group for R _{204 to} R ₂₀₇ is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group.
The alkyl group as R _{204 to} R ₂₀₇ may be linear, branched or cyclic, and is preferably a linear or branched alkyl group having 1 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group). Group, butyl group, pentyl group) and cyclic alkyl groups having 3 to 10 carbon atoms (cyclopentyl group, cyclohexyl group, norbornyl group).
Examples of the substituent that R _{204 to} R ₂₀₇ may have include an alkyl group (for example, 1 to 15 carbon atoms), an aryl group (for example, 6 to 15 carbon atoms), and an alkoxy group (for example, 1 to 15 carbon atoms). ), Halogen atoms, hydroxyl groups, phenylthio groups, and the like.
X ⁻ represents a non-nucleophilic anion, and examples thereof include the same as the non-nucleophilic anion of X ^{− in} formula (I).

  Among the compounds that decompose upon irradiation with actinic rays or radiation to generate acids, compounds represented by the following general formulas (ZIV), (ZV), and (ZVI) can be further exemplified.

In general formulas (ZIV) to (ZVI), Ar ₃ and Ar ₄ each independently represents an aryl group.
R ₂₀₆ represents an alkyl group or a substituted or unsubstituted aryl group.
R ₂₀₇ and R ₂₀₈ each independently represents an alkyl group, an aryl group, or an electron-withdrawing group. R ₂₀₇ is preferably an aryl group.
R ₂₀₈ is preferably an electron-withdrawing group, more preferably a cyano group or a fluoroalkyl group.
A represents an alkylene group, an alkenylene group or an arylene group.

  Of the compounds that decompose upon irradiation with actinic rays or radiation to generate an acid, compounds represented by general formulas (ZI) to (ZIII) are more preferable.

  Among the compounds that decompose upon irradiation with actinic rays or radiation to generate an acid, examples of particularly preferable compounds are listed below.

An acid generator can be used individually by 1 type or in combination of 2 or more types. When two or more types are used in combination, it is preferable to combine two types of compounds that generate two types of organic acids that differ in the total number of atoms excluding hydrogen atoms by two or more.
The content of the acid generator in the composition is preferably 0.1 to 20% by mass, more preferably 0.5 to 10% by mass, and still more preferably 1 to 7% by mass, based on the total solid content of the resist composition. %.

(C) Fluorine-containing compound The positive resist composition of the present invention contains a fluorine-containing compound containing at least one group selected from the following groups (x) to (z).
(X) an alkali-soluble group,
(Y) a group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer;
(Z) a group decomposable by the action of an acid

(X) Alkali-soluble groups include phenolic hydroxyl groups, carboxylic acid groups, fluorinated alcohol groups, sulfonic acid groups, sulfonamido groups, sulfonylimide groups, (alkylsulfonyl) (alkylcarbonyl) methylene groups, (alkylsulfonyl) ( Alkylcarbonyl) imide group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, tris (alkylsulfonyl) And a group having a methylene group.
Preferred alkali-soluble groups include fluorinated alcohol groups (preferably hexafluoroisopropanol) and bis (alkylcarbonyl) methylene groups.

When the fluorine-containing compound (C) is a resin, the repeating unit having an alkali-soluble group (x) is a repeating unit in which an alkali-soluble group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid or methacrylic acid. A repeating unit in which an alkali-soluble group is bonded to the main chain of the resin via a unit or a linking group, and further, a polymerization initiator or a chain transfer agent having an alkali-soluble group is introduced at the end of the polymer chain at the time of polymerization, Any of these is preferable.
The content of the repeating unit having an alkali-soluble group (x) is preferably from 1 to 50 mol%, more preferably from 3 to 35 mol%, still more preferably from 5 to 20 mol%, based on all repeating units in the polymer.

  Specific examples of the repeating unit having an alkali-soluble group (x) are shown below.

(Y) Examples of the group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer include a group having a lactone structure, an acid anhydride, an acid imide group, and the like, and preferably a lactone group It is.
When the fluorine-containing compound (C) is a resin, the repeating unit having a group (y) that is decomposed by the action of an alkali developer and increases the solubility in the alkali developer may be a repeat of an acrylate ester or a methacrylate ester. As a unit, a repeating unit in which a group that increases the solubility in an alkali developer is bonded to the main chain of the resin via a linking group, or a group (y) that increases the solubility in an alkali developer. It is preferable to use a polymerization initiator or a chain transfer agent having a polymerization initiator at the end of the polymer chain during polymerization.
The content of the repeating unit having a group (y) whose solubility in an alkali developer is increased is preferably 1 to 40 mol%, more preferably 3 to 30 mol%, still more preferably based on all repeating units in the polymer. 5 to 15 mol%.

  Specific examples of the repeating unit having a group (y) that increases the solubility in an alkali developer include those similar to the lactone structure exemplified in the resin (A) and the structure represented by the general formula (VIII). Can be mentioned.

  (Z) Examples of the group capable of decomposing by the action of an acid include the same acid-decomposable groups as mentioned for the resin (A). When the fluorine-containing compound (C) is a resin, (z) the repeating unit containing a group that decomposes by the action of an acid is the same as the repeating unit containing an acid-decomposable group listed in the resin (A). can give. When the fluorine-containing compound (C) is a resin, the content of the repeating unit having a group (z) that decomposes by the action of an acid is preferably 1 to 80 mol%, more preferably 10%, based on all repeating units in the polymer. It is -80 mol%, More preferably, it is 20-60 mol%.

  In the fluorine-containing compound (c), the fluorine atom may be contained in each of the groups (x) to (z) or may be contained in other sites. When the fluorine-containing compound (c) is a resin, the fluorine atom may be contained in the main chain of the resin or in the side chain, and is preferably contained in the side chain. Moreover, even if it is contained in the repeating unit containing each group of said (x)-(z), it may be contained in the other repeating unit.

  The fluorine-containing compound (C) is a compound containing an alkyl group having a fluorine atom (fluoroalkyl group) (preferably having 1 to 4 carbon atoms), a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom. Preferably there is.

The alkyl group having a fluorine atom is a linear or branched alkyl group substituted with at least one fluorine atom, and may further have another substituent.
The cycloalkyl group having at least one fluorine atom is a monocyclic or polycyclic cycloalkyl group substituted with at least one fluorine atom, and may further have another substituent.
Examples of the aryl group having at least one fluorine atom include those in which at least one fluorine atom is substituted on an aryl group such as a phenyl group or a naphthyl group, and may further have other substituents.

  The alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, and the aryl group having a fluorine atom preferably have a structure represented by the following general formulas (F1) to (F3).

In general formulas (F1) to (F3),
R _{50 to} R ₆₄ each independently represents a hydrogen atom, a fluorine atom or an alkyl group.
However, at least one of R _{50 to} R ₅₅ , R _{57 to} R ₆₁ and R _{62 to} R ₆₄ is a fluorine atom or an alkyl group in which at least one hydrogen atom is substituted with a fluorine atom (that is, a fluoroalkyl group, Preferably it represents C1-C4.
R _{50 to} R ₅₅ and R _{57 to} R ₆₁ are preferably all fluorine atoms.
R _{62 to} R ₆₃ are preferably a fluoroalkyl group having 1 to 4 carbon atoms, and more preferably a perfluoroalkyl group having 1 to 4 carbon atoms.
R ₆₂ and R ₆₃ may be connected to each other to form a ring.

Examples of the structure represented by the general formula (F1) include —CF ₂ OH, —C (CF ₃ ) ₂ OH, —C (C ₂ F ₅ ) ₂ OH, —C (CF ₃ ) (CH ₃ ). OH, —CH (CF ₃ ) OH and the like can be mentioned, and —C (CF ₃ ) ₂ OH is preferable.
Examples of the structure represented by the general formula (F2) include p-fluorobenzene, pentafluorobenzene, 3,5-di (trifluoromethyl) benzene, and the like.
The structure represented by the general formula (F3) includes trifluoroethyl group, pentafluoropropyl group, pentafluoroethyl group, heptafluorobutyl group, hexafluoroisopropyl group, heptafluoroisopropyl group, hexafluoro (2-methyl). Isopropyl group, nonafluorobutyl group, octafluoroisobutyl group, nonafluorohexyl group, nonafluoro-t-butyl group, perfluoroisopentyl group, perfluorooctyl group, perfluoro (trimethyl) hexyl group, 2,2,3 3-tetrafluorocyclobutyl group, perfluorocyclohexyl group, and the like. Hexafluoroisopropyl group, heptafluoroisopropyl group, hexafluoro (2-methyl) isopropyl group, octafluoroisobutyl group, nonafluoro- - butyl group is preferably a perfluoro isopentyl group, hexafluoroisopropyl group, more preferably a heptafluoroisopropyl group.

  The compound (C) is preferably any of the following resins (C-1) to (C-13). More preferably, the resin is any one of (C-1) to (C-4) and (C-8) to (C-13).

(C-1)
A repeating unit (a) having a fluoroalkyl group, and
Resin containing repeating unit (X) containing alkali-soluble group (x).
More preferably, it is a copolymer resin consisting only of the repeating unit (a) and the repeating unit (X).

(C-2)
A repeating unit (a) having a fluoroalkyl group,
A resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
More preferably, it is a copolymer resin consisting only of the repeating unit (a) and the repeating unit (Y).

(C-3)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
More preferably, it is a copolymer resin consisting only of the repeating unit (a) and the repeating unit (Z).

(C-4)
A repeating unit (a) having a fluoroalkyl group,
A repeating unit (X) containing an alkali-soluble group (x), and
A resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
More preferably, it is a copolymer resin consisting only of the repeating unit (a), the repeating unit (X), and the repeating unit (Y).

(C-5)
Repeating unit having a fluoroalkyl group (a)
A repeating unit (X) containing an alkali-soluble group (x), and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
More preferably, it is a copolymer resin consisting only of the repeating unit (a), the repeating unit (X), and the repeating unit (Z).

(C-6)
Repeating unit having a fluoroalkyl group (a)
A repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
More preferably, it is a copolymer resin consisting only of the repeating unit (a), the repeating unit (Y), and the repeating unit (Z).

(C-7)
A repeating unit (a) having a fluoroalkyl group,
A repeating unit (X) containing an alkali-soluble group (x),
A repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
More preferably, it is a copolymer resin consisting only of the repeating unit (a), the repeating unit (X), the repeating unit (Y), and the repeating unit (Z).

(C-8)
A resin containing a repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group.
More preferably, it is a resin (homopolymer) consisting only of repeating units (aX).

(C-9)
Resin containing a repeating unit (bY) containing both a group (y) and a fluoroalkyl group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
More preferably, it is a resin (homopolymer) consisting only of repeating units (bY).

(C-10)
A repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group having 1 to 4 carbon atoms,
And a resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
More preferably, it is a copolymer resin consisting only of the repeating unit (aX) and the repeating unit (Y).

(C-11)
A repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
More preferably, it is a copolymer resin consisting only of the repeating unit (aX) and the repeating unit (Z).

(C-12)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group.
More preferably, it is a copolymer resin consisting only of the repeating unit (a) and the repeating unit (aX).

(C-13)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (aY) containing both a group (y) and a fluoroalkyl group that decomposes under the action of an alkali developer and increases the solubility in the alkali developer.
More preferably, it is a copolymer resin consisting only of the repeating unit (a) and the repeating unit (aY).

  Here, it is preferable that the repeating unit (a) having a fluoroalkyl group does not contain an alkali-soluble group.

In the resins (C-1), (C-2) and (C-4), the introduction amount of the repeating unit (a) is preferably 40 to 99% in terms of mol%, and preferably 60 to 80%. More preferred.
In the resin (C-10), the introduction amount of the repeating unit (aX) is preferably 40 to 99% in mol%, and more preferably 60 to 90%.

  Specific examples of the repeating unit having a fluorine atom include repeating units represented by (C1) to (C8) described later. Specific examples of (aX) include repeating units (C1) and (C2) described later. In particular, specific examples of the repeating unit (a) include, for example, repeating units represented by (C4) to (C7) described later, and specifically include the following.

  Examples of the repeating unit (aX) include the repeating units (C1) and (C2) described later, and specifically include the following.

  Examples of the repeating unit (aY) include a repeating unit (C3) described later.

In addition to the repeating units represented by (C1) to (C8) described later, the fluorine compound (C) of the present invention has various repeating structures for the purpose of controlling film forming property, coating property, compatibility, and receding contact angle. Units can be included.
As such a repeating unit, for example, one addition polymerizable unsaturated bond selected from acrylic acid esters, methacrylic acid esters, acrylamides, methacrylamides, styrenes, allyl compounds, vinyl ethers, vinyl esters, etc. The compound which has the above etc. can be mentioned. Preferably, acrylic acid esters, methacrylic acid esters, acrylamides, or methacrylamides having a branched alkyl group having 6 to 20 carbon atoms or a cycloalkyl group having 6 to 20 carbon atoms, or 1 to 10 carbon atoms. Styrene which may have an alkyl group of
In addition, any addition-polymerizable unsaturated compound that can be copolymerized with monomers corresponding to the above various repeating structural units may be copolymerized.

  Specific examples of the fluorine-containing compound (C) include resins containing a repeating unit represented by any one of the following general formulas (C1) to (C8).

In general formulas (C1) to (C8),
Rf represents a group having a fluoroalkyl group (preferably having 1 to 4 carbon atoms).
P represents a straight chain, branched alkylene group, monocyclic or polycyclic cycloalkylene group, preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group or a norbornylene group.
Each X independently represents a hydrogen atom, a halogen atom or an alkyl group. The alkyl group may be linear or branched, and may have a substituent such as a halogen atom.
Each Q independently represents a single bond, an alkylene group, a divalent group having a monocyclic or polycyclic alicyclic hydrocarbon structure, an ether group, an ester group, a carbonyl group, or a divalent group obtained by combining these. However, in the formula (C1), when n is 2 or 3, these divalent groups are further —C
(Rf) represents a group in which one or two groups represented by _2- OH are substituted. The Q preferably represents a single _bond, -Q 1 -CO ₂ - is a linking group represented by. Q ₁ is a linear or branched alkylene group or a monocyclic or polycyclic cycloalkylene group, preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group or a norbornylene group.
n represents a natural number of 1 to 3 each independently.
X ₁₁ represents an oxygen atom or a group represented by —N (R ₁₃ ) —. R ₁₃ represents a hydrogen atom, a linear or branched alkyl group (preferably having 1 to 20 carbon atoms), or a cycloalkyl group (preferably having 20 or less carbon atoms).
R ₁₁ each independently represents a hydrogen atom, a halogen atom, or an alkyl group. The alkyl group may be linear or branched, and may have a substituent such as a halogen atom.
R ₁₂ and R _{21 to} R ₂₃ each independently represents an organic group having at least one fluorine atom.
P ₂ represents an alicyclic group.
R ₂₀ represents an organic group.
R _{4 to} R ₇ represent a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms. However, at least one of R _{4 to} R ₇ represents a fluorine atom. R ₄ and R ₅ or R ₆ and R ₇ may form a ring.

  Although the preferable specific example of the repeating unit which has a fluorine atom when a fluorine-containing compound is high molecular weight (resin) is given to the following, it is not limited to these.

  Specific examples in the case where the fluorine-containing compound has a high molecular weight (resin) are given below, but the invention is not limited thereto.

  When the fluorine-containing compound (C) is an alkali-soluble compound, the amount of the alkali-soluble group (acid group) is preferably 0.1 to 10 meq / g as the acid value of the alkali-soluble compound (C). 1 to 3 meq / g is more preferable. 0.1 to 2 meq / g is more preferable. The acid value is a measurement of the amount (mg) of potassium hydroxide required to neutralize the compound.

  The fluorine-containing compound (C) preferably contains 5 to 80% by mass of fluorine atoms, more preferably 10 to 80% by mass. More preferably, it is 20-60 mass%.

  The fluorine-containing compound (C) may be a low-molecular compound or a high-molecular compound (for example, a resin), but is a high-molecular compound considering that a low-molecular weight component is eluted from the resist into the immersion liquid to contaminate the lens. It is preferable. The molecular weight is preferably 1000 to 100,000, more preferably 1000 to 50,000, and still more preferably 1500 to 15,000.

  When the fluorine-containing compound (C) is a resin, the residual monomer amount is preferably 0 to 10% by mass, more preferably 0 to 5% by mass, and more preferably 0 to 1%. The molecular weight distribution (Mw / Mn, also referred to as dispersity) is preferably 1 to 5, more preferably 1 to 3, more preferably 1 to 1, from the viewpoints of resolution, resist shape, resist pattern sidewall, roughness, and the like. A range of .5 is used.

  The addition amount of the fluorine-containing compound (C) in the positive resist composition is preferably 0.1 to 30% by mass, more preferably 0.1 to 10% by mass, based on the total solid content of the resist composition. More preferably, it is 0.1-5 mass%.

  The fluorine-containing compound (C) may be used alone or in combination.

  As the fluorine-containing compound (C), various commercially available products can be used or synthesized by a conventional method. For example, in the case of a resin, it can be obtained by radical polymerization as in the synthesis of the aforementioned acid-decomposable resin (A) and general purification.

  As with the acid-dissociable group-containing resin (A), the fluorine-containing compound (C) is naturally low in impurities such as metals, but in the case of a high molecular weight substance, the residual monomer and oligomer components are predetermined. It is preferably less than the value, for example, 0.1% by mass by HPLC, thereby not only can further improve the sensitivity, resolution, process stability, pattern shape, etc. as a resist, but also foreign matter in the liquid, sensitivity, etc. A resist having no change with time can be obtained.

  The fluorine-containing compound (C) is also preferably the following resin (C1) or (C2).

  The resin (C1) has a structure represented by the following formula.

In formulas (CI) to (CIII),
Each X independently represents a hydrogen atom, a halogen atom, or an alkyl group. The alkyl group may be linear or branched, and may have a substituent such as a halogen atom.
Rf represents an alkyl group having a fluorine atom represents a group having a linear or branched alkyl group substituted with at least one fluorine atom. Preferably, it is group represented by the general formula (F2) or (F3) described above.
Y represents an alkylene group, a divalent linking group having an alicyclic hydrocarbon structure (monocyclic or polycyclic), a single bond, an ether group, an ester group, a carbonyl group, a carboxyl group, or a divalent group obtained by combining these. Represents. A single bond is preferable.
V represents a group having a lactone ring. Preferably, it represents a group represented by any one of the general formulas (LC1-1) to (LC1-16) in the resin (A).
Each Rc independently represents an unsubstituted hydrocarbon group. However, Rc does not include heteroatoms such as oxygen atoms and halogens. Specifically, Rc represents a branched alkyl group, a cycloalkyl group, a branched alkenyl group, a cycloalkenyl group, or an aryl group. Preferably, it has 4 to 20 carbon atoms, more preferably 7 to 15 carbon atoms, and may be linear, branched or cyclic, preferably branched or cyclic.
m, n, and p each represent a number that satisfies the following relationship.
m + n + p = 100, 0 <m <100, 0 <n <100, 0 ≦ p <100. Preferably, they are m: 20-80, n: 20-60, p: 0-50, More preferably, m: 20-80, n: 20-40, p: 10-50.

  The resin (C2) has a structure represented by the following formula.

In formulas (CI), (CIV), (CIII),
X, Rf, Y, and Rc are the same as those in the above (CI) to (CIII).
Rp ₁ represents a group that is decomposed by the action of an acid.
m, n, and p each represent a number that satisfies the following relationship.
m + n + p = 100, 0 <m <100, 0 <n <100, 0 ≦ p <100.
Preferably, m is 10 to 90, n is 10 to 90, p is 0 to 50, and more preferably m is 20 to 80, n is 20 to 80, and p is 10 to 50.

  Preferable specific examples of the repeating unit represented by the general formula (CI) are shown below, but are not limited thereto.

  Specific examples of the repeating unit represented by formula (CII) include the same repeating units as those having a group having a lactone structure in the resin (A).

  Preferred specific examples of the repeating unit represented by the general formula (CIII) are shown below, but are not limited thereto.

In the general formula (CIV), examples of the group that is decomposed by the action of an acid include —C (R ₃₆ ) (R ₃₇ ) (R ₃₈ ), —CH ₂ (OR ₃₉ ), and the like.
R _{36 to} R ₃₉ each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. R ₃₆ and R ₃₇ may be bonded to each other to form a ring.
The alkyl group of R _{36 to} R ₃₉ is preferably an alkyl group having 1 to 10 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a hexyl group, and an octyl group. Can be mentioned.
The cycloalkyl group of R _{36 to} R ₃₉ may be monocyclic or polycyclic. The monocyclic type is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. As the polycyclic type, a cycloalkyl group having 6 to 20 carbon atoms is preferable. Group, androstanyl group and the like.

The aryl group of R _{36 to} R ₃₉ is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group.
The aralkyl group of R _{36 to} R ₃₉ is preferably an aralkyl group having 7 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, and a naphthylmethyl group.
The alkenyl group of R _{36 to} R ₃₉ is preferably an alkenyl group having 2 to 8 carbon atoms, and examples thereof include a vinyl group, an allyl group, a butenyl group, and a cyclohexenyl group.

  Specific examples of the repeating unit represented by the general formula (CIV) are shown below, but are not limited thereto.

Resins (C1) and (C2) can be synthesized according to a conventional method (for example, radical polymerization). For example, as a general synthesis method, a monomer polymerization method in which a monomer species and an initiator are dissolved in a solvent and the polymerization is performed by heating, and a solution of the monomer species and the initiator is dropped into the heating solvent over 1 to 10 hours. The dropping polymerization method is added, and the dropping polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane, diisopropyl ether, ketones such as methyl ethyl ketone and methyl isobutyl ketone, ester solvents such as ethyl acetate, amide solvents such as dimethylformamide and dimethylacetamide, Furthermore, the solvent which melt | dissolves the composition of this invention like the below-mentioned propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone is mentioned. More preferably, the polymerization is performed using the same solvent as that used in the resist composition of the present invention. Thereby, generation | occurrence | production of the particle at the time of a preservation | save can be suppressed.
The polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon. As a polymerization initiator, a commercially available radical initiator (azo initiator, peroxide, etc.) is used to initiate the polymerization. As the radical initiator, an azo initiator is preferable, and an azo initiator having an ester group, a cyano group, or a carboxyl group is preferable. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile, dimethyl 2,2′-azobis (2-methylpropionate) and the like. Add initiator or add in portions as desired.
The reaction temperature is usually 10 ° C to 150 ° C, preferably 30 ° C to 120 ° C, more preferably 50 to 100 ° C.

  After completion of the reaction, the mixture is allowed to cool to room temperature and purified. Purification can be accomplished by a liquid-liquid extraction method that removes residual monomers and oligomer components by combining water and an appropriate solvent, and a purification method in a solution state such as ultrafiltration that extracts and removes only those having a specific molecular weight or less. , Reprecipitation method that removes residual monomer by coagulating resin in poor solvent by dripping resin solution into poor solvent and purification in solid state such as washing filtered resin slurry with poor solvent A normal method such as a method can be applied. For example, the resin is precipitated as a solid by contacting a solvent (poor solvent) in which the resin is hardly soluble or insoluble in a volume amount of 10 times or less, preferably 10 to 5 times that of the reaction solution.

  The solvent (precipitation or reprecipitation solvent) used in the precipitation or reprecipitation operation from the polymer solution may be a poor solvent for the polymer. For example, hydrocarbon (pentane, hexane, Aliphatic hydrocarbons such as heptane and octane; Cycloaliphatic hydrocarbons such as cyclohexane and methylcyclohexane; Aromatic hydrocarbons such as benzene, toluene and xylene), halogenated hydrocarbons (methylene chloride, chloroform, carbon tetrachloride, etc.) Halogenated aliphatic hydrocarbons; halogenated aromatic hydrocarbons such as chlorobenzene and dichlorobenzene), nitro compounds (nitromethane, nitroethane, etc.), nitriles (acetonitrile, benzonitrile, etc.), ethers (diethyl ether, diisopropyl ether, dimethoxyethane) Chain A Cyclic ethers such as tetrahydrofuran and dioxane), ketones (acetone, methyl ethyl ketone, diisobutyl ketone, etc.), esters (ethyl acetate, butyl acetate, etc.), carbonates (dimethyl carbonate, diethyl carbonate, ethylene carbonate, propylene carbonate, etc.), alcohols ( (Methanol, ethanol, propanol, isopropyl alcohol, butanol, etc.), carboxylic acid (acetic acid, etc.), water, a mixed solvent containing these solvents, and the like. Among these, as a precipitation or reprecipitation solvent, a solvent containing at least an alcohol (particularly methanol or the like) or water is preferable. In such a solvent containing at least hydrocarbon, the ratio of alcohol (particularly methanol) and other solvent (for example, ester such as ethyl acetate, ethers such as tetrahydrofuran) is, for example, the former / the latter (volume ratio). 25 ° C.) = 10/90 to 99/1, preferably the former / the latter (volume ratio; 25 ° C.) = 30/70 to 98/2, more preferably the former / the latter (volume ratio; 25 ° C.) = 50 / It is about 50 to 97/3.

  The amount of the precipitation or reprecipitation solvent used can be appropriately selected in consideration of efficiency, yield, and the like. More preferably, it is 300-1000 mass parts.

  The nozzle diameter at the time of supplying the polymer solution to the precipitation or reprecipitation solvent (poor solvent) is preferably 4 mmφ or less (for example, 0.2 to 4 mmφ). Moreover, the supply speed (dropping speed) of the polymer solution into the poor solvent is, for example, about 0.1 to 10 m / second, preferably about 0.3 to 5 m / second, as the linear speed.

  The precipitation or reprecipitation operation is preferably performed with stirring. As a stirring blade used for stirring, for example, a desk turbine, a fan turbine (including a paddle), a curved blade turbine, an arrow blade turbine, a fiddler type, a bull margin type, an angled blade fan turbine, a propeller, a multistage type, an anchor type (or Horseshoe type), gate type, double ribbon, screw, etc. can be used. Stirring is preferably further performed for 10 minutes or more, particularly 20 minutes or more after the supply of the polymer solution. When the stirring time is short, the monomer content in the polymer particles may not be sufficiently reduced. Further, the polymer solution and the poor solvent can be mixed and stirred using a line mixer instead of the stirring blade.

  The temperature for precipitation or reprecipitation can be appropriately selected in consideration of efficiency and operability, but is usually about 0 to 50 ° C., preferably around room temperature (for example, about 20 to 35 ° C.). The precipitation or reprecipitation operation can be performed by a known method such as a batch method or a continuous method using a conventional mixing vessel such as a stirring tank.

  The precipitated or re-precipitated particulate polymer is usually subjected to conventional solid-liquid separation such as filtration and centrifugation, and dried before use. Filtration is performed using a solvent-resistant filter medium, preferably under pressure. Drying is performed at a temperature of about 30 to 100 ° C., preferably about 30 to 50 ° C. under normal pressure or reduced pressure (preferably under reduced pressure).

The resin may be once deposited and separated, and then dissolved again in a solvent, and the resin may be brought into contact with a hardly soluble or insoluble solvent.
That is, after completion of the radical polymerization reaction, a solvent in which the polymer is hardly soluble or insoluble is brought into contact, the resin is precipitated (step a), the resin is separated from the solution (step b), and dissolved again in the solvent. (Step c), and then contact the resin solution A with a solvent in which the resin is hardly soluble or insoluble in a volume amount less than 10 times that of the resin solution A (preferably 5 times or less volume). This may be a method including precipitating a resin solid (step d) and separating the precipitated resin (step e).
The solvent used in the preparation of the resin solution A can be the same solvent as the solvent that dissolves the monomer in the polymerization reaction, and may be the same as or different from the solvent used in the polymerization reaction.

(D) A dissolution inhibiting compound having a molecular weight of 3000 or less (hereinafter, also referred to as “dissolution inhibiting compound”) that is decomposed by the action of an acid to increase the solubility in an alkaline developer.
The positive resist composition of the present invention contains a dissolution inhibiting compound having a molecular weight of 3000 or less (hereinafter also referred to as “dissolution inhibitor”), which decomposes by the action of an acid and increases the solubility in an alkaline developer. Also good.
As a dissolution inhibitor, it has an acid-decomposable group such as a cholic acid derivative containing an acid-decomposable group described in Proceeding of SPIE, 2724, 355 (1996) in order not to lower the permeability of 220 nm or less. Alicyclic or aliphatic compounds are preferred. Examples of the acid-decomposable group and alicyclic structure are the same as those described for the resin as the component (A).
The molecular weight of the dissolution inhibitor in the present invention is 3000 or less, preferably 300 to 3000, and more preferably 500 to 2500.

  The addition amount of the dissolution inhibitor is preferably 1 to 30% by mass, more preferably 2 to 20% by mass, based on the total solid content of the positive resist composition.

  Although the specific example of a dissolution inhibitor is shown below, it is not limited to these.

(E) Basic compound The positive resist composition of the present invention preferably contains (E) a basic compound in order to reduce a change in performance over time from exposure to heating.
Preferred examples of the basic compound include compounds having structures represented by the following formulas (A) to (E).

In general formulas (A) to (E),
R ²⁰⁰ , R ²⁰¹ and R ²⁰² may be the same or different and are a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms. Here, R ²⁰¹ and R ²⁰² may combine with each other to form a ring.

The alkyl group may be unsubstituted or may have a substituent. Examples of the alkyl group having a substituent include an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, Or a C1-C20 cyanoalkyl group is preferable.
R ²⁰³ , R ²⁰⁴ , R ²⁰⁵ and R ²⁰⁶ may be the same or different and each represents an alkyl group having 1 to 20 carbon atoms.
The alkyl groups in these general formulas (A) to (E) are more preferably unsubstituted.

Examples of basic compounds include substituted or unsubstituted primary, secondary, and tertiary aliphatic amines, aromatic amines, heterocyclic amines, amide derivatives, imide derivatives, and cyano groups. Examples thereof include nitrogen-containing compounds. Of these, aliphatic amines, aromatic amines, and heterocyclic amines are preferable. Preferred substituents that may be present are an amino group, an alkyl group, an alkoxy group, an acyl group, an acyloxy group, an aryl group, an aryloxy group, a nitro group, a cyano group, an ester group, and a lactone group.
These basic compounds are used alone or in combination of two or more.

  The usage-amount of a basic compound is 0.001-10 mass% normally on the basis of solid content of a positive resist composition, Preferably it is 0.01-5 mass%.

  The use ratio of the acid generator and the basic compound in the composition is preferably acid generator / basic compound (molar ratio) = 2.5 to 300. In other words, the molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppressing the reduction in resolution due to the thickening of the resist pattern over time until post-exposure heat treatment. The acid generator / basic compound (molar ratio) is more preferably 5.0 to 200, still more preferably 7.0 to 150.

(E) Surfactant The positive resist composition of the present invention preferably further contains (E) a surfactant, and is a fluorine-based and / or silicon-based surfactant (fluorine-based surfactant, silicon-based interface). It is more preferable to contain any one or two or more of an activator and a surfactant having both a fluorine atom and a silicon atom.

When the positive resist composition of the present invention contains the surfactant (E), a resist having good sensitivity and resolution and less adhesion and development defects when using an exposure light source of 250 nm or less, particularly 220 nm or less. A pattern can be given.
Examples of the fluorine-based and / or silicon-based surfactant include, for example, JP-A No. 62-36663, JP-A No. 61-226746, JP-A No. 61-226745, JP-A No. 62-170950, JP 63-34540 A, JP 7-230165 A, JP 8-62834 A, JP 9-54432 A, JP 9-5988 A, JP 2002-277862 A, US Patent Nos. 5,405,720, 5,360,692, 5,529,881, 5,296,330, 5,436,098, 5,576,143, 5,294,511, 5,824,451 Surfactant can be mentioned, The following commercially available surfactant can also be used as it is.
Examples of commercially available surfactants that can be used include F-top EF301, EF303 (manufactured by Shin-Akita Kasei Co., Ltd.), Florard FC430, 431, 4430 (manufactured by Sumitomo 3M Co., Ltd.), MegaFuck F171, F173, F176, F189 , F113, F110, F177, F120, R08 (manufactured by Dainippon Ink & Chemicals, Inc.), Surflon S-382, SC101, 102, 103, 104, 105, 106 (manufactured by Asahi Glass Co., Ltd.), Troisol S-366 (Manufactured by Troy Chemical Co., Ltd.), GF-300, GF-150 (manufactured by Toa Gosei Chemical Co., Ltd.), Surflon S-393 (manufactured by Seimi Chemical Co., Ltd.), F-top EF121, EF122A, EF122B, RF122C, EF125M , EF135M, EF351, 352, EF801, EF8 2, EF601 (manufactured by Gemco), PF636, PF656, PF6320, PF6520 (manufactured by OMNOVA), FTX-204D, 208G, 218G, 230G, 204D, 208D, 212D, 218, 222D (manufactured by Neos) Fluorine-based surfactants or silicon-based surfactants such as Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicon-based surfactant.

In addition to the known surfactants described above, the surfactant is derived from a fluoroaliphatic compound produced by a telomerization method (also called telomer method) or an oligomerization method (also called oligomer method). A surfactant using a polymer having a fluoroaliphatic group can be used. The fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.
As the polymer having a fluoroaliphatic group, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate and / or (poly (oxyalkylene)) methacrylate is preferable and distributed irregularly. Or may be block copolymerized. Examples of the poly (oxyalkylene) group include a poly (oxyethylene) group, a poly (oxypropylene) group, a poly (oxybutylene) group, and the like, and a poly (oxyethylene, oxypropylene, and oxyethylene group). A unit having different chain lengths in the same chain length, such as a block link) or poly (block link of oxyethylene and oxypropylene) may be used. Furthermore, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate (or methacrylate) is not only a binary copolymer but also a monomer having two or more different fluoroaliphatic groups. Further, it may be a ternary or higher copolymer obtained by simultaneously copolymerizing two or more different (poly (oxyalkylene)) acrylates (or methacrylates).

Examples of commercially available surfactants include Megafac F178, F-470, F-473, F-475, F-476, and F-472 (Dainippon Ink Chemical Co., Ltd.). Further, a copolymer of an acrylate (or methacrylate) having a C ₆ F ₁₃ group and (poly (oxyalkylene)) acrylate (or methacrylate), an acrylate (or methacrylate) having a C ₃ F ₇ group and (poly (oxy And a copolymer of (ethylene)) acrylate (or methacrylate) and (poly (oxypropylene)) acrylate (or methacrylate).

  In the present invention, other surfactants other than fluorine-based and / or silicon-based surfactants can also be used. Specifically, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether, etc. Sorbitans such as polyoxyethylene alkyl allyl ethers, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate Fatty acid esters, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopal Te - DOO, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, may be mentioned polyoxyethylene sorbitan tristearate nonionic surfactants of polyoxyethylene sorbitan fatty acid esters such as such.

  These surfactants may be used alone or in several combinations.

  (E) The usage-amount of surfactant becomes like this. Preferably it is 0.01-10 mass% with respect to positive resist composition whole quantity (except a solvent), More preferably, it is 0.1-5 mass%.

(F) Solvent Examples of the solvent that can be used in preparing the positive resist composition by dissolving the above components include, for example, alkylene glycol monoalkyl ether carboxylate, alkylene glycol monoalkyl ether, alkyl lactate ester, Examples thereof include organic solvents such as alkyl alkoxypropionates, cyclic lactones having 4 to 10 carbon atoms, monoketone compounds having 4 to 10 carbon atoms, which may contain a ring, alkylene carbonate, alkoxyalkyl acetate, and alkyl pyruvate. .

Examples of the alkylene glycol monoalkyl ether carboxylate include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, propylene glycol monomethyl ether propionate, propylene glycol monoethyl Preferred examples include ether propionate, ethylene glycol monomethyl ether acetate, and ethylene glycol monoethyl ether acetate.
Preferred examples of the alkylene glycol monoalkyl ether include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, ethylene glycol monomethyl ether, and ethylene glycol monoethyl ether.

Preferred examples of the alkyl lactate include methyl lactate, ethyl lactate, propyl lactate and butyl lactate.
Preferable examples of the alkyl alkoxypropionate include ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate, and ethyl 3-methoxypropionate.

  Examples of the cyclic lactone having 4 to 10 carbon atoms include β-propiolactone, β-butyrolactone, γ-butyrolactone, α-methyl-γ-butyrolactone, β-methyl-γ-butyrolactone, γ-valerolactone, γ- Caprolactone, γ-octanoic lactone, and α-hydroxy-γ-butyrolactone are preferred.

  Examples of the monoketone compound having 4 to 10 carbon atoms which may contain a ring include 2-butanone, 3-methylbutanone, pinacolone, 2-pentanone, 3-pentanone, 3-methyl-2-pentanone, 4- Methyl-2-pentanone, 2-methyl-3-pentanone, 4,4-dimethyl-2-pentanone, 2,4-dimethyl-3-pentanone, 2,2,4,4-tetramethyl-3-pentanone, 2 -Hexanone, 3-hexanone, 5-methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-methyl-3-heptanone, 5-methyl-3-heptanone, 2,6-dimethyl-4 -Heptanone, 2-octanone, 3-octanone, 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone, 3-decanone, 4-decanone, 5- Xen-2-one, 3-penten-2-one, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2,2-dimethylcyclopentanone, 2,4,4-trimethylcyclopenta Non, cyclohexanone, 3-methylcyclohexanone, 4-methylcyclohexanone, 4-ethylcyclohexanone, 2,2-dimethylcyclohexanone, 2,6-dimethylcyclohexanone, 2,2,6-trimethylcyclohexanone, cycloheptanone, 2-methylcyclo Preferred are heptanone and 3-methylcycloheptanone.

Preferred examples of the alkylene carbonate include propylene carbonate, vinylene carbonate, ethylene carbonate, and butylene carbonate.
Examples of the alkoxyalkyl acetate include 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2- (2-ethoxyethoxy) ethyl acetate, 3-methoxy-3-methylbutyl acetate, and 1-methoxy acetate. 2-propyl is preferred.
Preferred examples of the alkyl pyruvate include methyl pyruvate, ethyl pyruvate, and propyl pyruvate.
As a solvent which can be preferably used, a solvent having a boiling point of 130 ° C. or higher under normal temperature and normal pressure can be mentioned. Specifically, cyclopentanone, γ-butyrolactone, cyclohexanone, ethyl lactate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, ethyl 3-ethoxypropionate, ethyl pyruvate, 2-ethoxyethyl acetate, acetic acid -2- (2-ethoxyethoxy) ethyl and propylene carbonate are mentioned.
In the present invention, the above solvents may be used alone or in combination of two or more.

In this invention, you may use the mixed solvent which mixed the solvent which contains a hydroxyl group in a structure, and the solvent which does not contain a hydroxyl group as an organic solvent.
Examples of the solvent containing a hydroxyl group include ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, ethyl lactate, and the like. Particularly preferred are propylene glycol monomethyl ether and ethyl lactate.
Examples of the solvent not containing a hydroxyl group include propylene glycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone, γ-butyrolactone, cyclohexanone, butyl acetate, N-methylpyrrolidone, N, N-dimethylacetamide, dimethyl sulfoxide and the like. Among these, propylene glycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone, γ-butyrolactone, cyclohexanone, and butyl acetate are particularly preferred, and propylene glycol monomethyl ether acetate, ethyl ethoxypropionate. 2-heptanone is most preferred.
The mixing ratio (mass) of the solvent containing a hydroxyl group and the solvent not containing a hydroxyl group is 1/99 to 99/1, preferably 10/90 to 90/10, more preferably 20/80 to 60/40. . A mixed solvent containing 50% by weight or more of a solvent not containing a hydroxyl group is particularly preferred from the viewpoint of coating uniformity.

(G) Alkali-soluble resin The positive resist composition of the present invention may further contain an acid-decomposable group, (G) a resin that is insoluble in water and soluble in an alkaline developer, This improves the sensitivity.
In the present invention, novolak resins having a molecular weight of about 1000 to 20000 and polyhydroxystyrene derivatives having a molecular weight of about 3000 to 50000 can be used as such an alkali-soluble resin. However, they absorb light of 250 nm or less. Since it is large, it is preferable to use it by partially hydrogenating or using it in an amount of 30% by weight or less of the total resin amount.
A resin containing a carboxyl group as an alkali-soluble group can also be used. The resin containing a carboxyl group preferably has a monocyclic or polycyclic alicyclic hydrocarbon group for improving dry etching resistance. Specifically, a methacrylic acid ester and (meth) acrylic acid copolymer having an alicyclic hydrocarbon structure that does not exhibit acid decomposability, or a (meth) acrylic acid ester having an alicyclic hydrocarbon group having a carboxyl group at the terminal And the like.

(H) Carboxylic acid onium salt The positive resist composition in the present invention may contain (H) a carboxylic acid onium salt. Examples of the carboxylic acid onium salt include a carboxylic acid sulfonium salt, a carboxylic acid iodonium salt, and a carboxylic acid ammonium salt. In particular, the (H) carboxylic acid onium salt is preferably an iodonium salt or a sulfonium salt. Furthermore, it is preferable that the carboxylate residue of the (H) carboxylic acid onium salt of the present invention does not contain an aromatic group or a carbon-carbon double bond. As a particularly preferable anion moiety, a linear, branched, monocyclic or polycyclic alkylcarboxylic acid anion having 1 to 30 carbon atoms is preferable. More preferably, an anion of a carboxylic acid in which some or all of these alkyl groups are fluorine-substituted is preferable. The alkyl chain may contain an oxygen atom. This ensures transparency with respect to light of 220 nm or less, improves sensitivity and resolution, and improves density dependency and exposure margin.

  Fluorine-substituted carboxylic acid anions include fluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, pentafluoropropionic acid, heptafluorobutyric acid, nonafluoropentanoic acid, perfluorododecanoic acid, perfluorotridecanoic acid, perfluorocyclohexanecarboxylic acid, 2 , 2-bistrifluoromethylpropionic acid anion and the like.

  These (H) carboxylic acid onium salts can be synthesized by reacting sulfonium hydroxide, iodonium hydroxide, ammonium hydroxide and carboxylic acid with silver oxide in a suitable solvent.

  The content of (H) carboxylic acid onium salt in the composition is suitably from 0.1 to 20% by weight, preferably from 0.5 to 10% by weight, more preferably 1%, based on the total solid content of the composition. -7% by mass.

Other Additives In the positive resist composition of the present invention, if necessary, a dye, a plasticizer, a photosensitizer, a light absorber, and a compound that promotes solubility in a developer (for example, a molecular weight of 1000 or less) A phenol compound, an alicyclic compound having a carboxyl group, or an aliphatic compound).

Such phenolic compounds having a molecular weight of 1000 or less can be obtained by referring to, for example, the methods described in JP-A-4-1222938, JP-A-2-28531, US Pat. No. 4,916,210, European Patent 219294, etc. It can be easily synthesized by those skilled in the art.
Specific examples of alicyclic or aliphatic compounds having a carboxyl group include carboxylic acid derivatives having a steroid structure such as cholic acid, deoxycholic acid, lithocholic acid, adamantane carboxylic acid derivatives, adamantane dicarboxylic acid, cyclohexane carboxylic acid, cyclohexane Examples thereof include, but are not limited to, dicarboxylic acids.

[Physical properties of resist composition]
The positive resist composition of the present invention is preferably used at a film thickness of 30 to 250 nm, more preferably at a film thickness of 30 to 200 nm, from the viewpoint of improving resolution. Such a film thickness can be obtained by setting the solid content concentration in the positive resist composition to an appropriate range to give an appropriate viscosity and improving the coating property and film forming property.
The total solid concentration in the positive resist composition is generally 1 to 10% by mass, more preferably 1 to 8% by mass, and still more preferably 1.0 to 7.0% by mass.

[Pattern formation method]
The positive resist composition of the present invention is used by dissolving the above components in a predetermined organic solvent, preferably the mixed solvent, filtering the solution, and then applying the solution on a predetermined support as follows. The filter used for filter filtration is preferably made of polytetrafluoroethylene, polyethylene, or nylon of 0.1 microns or less, more preferably 0.05 microns or less, and still more preferably 0.03 microns or less.

For example, a positive resist composition is coated on a substrate (eg, silicon / silicon dioxide coating) used in the manufacture of precision integrated circuit elements by a suitable coating method such as a spinner or a coater, and dried to form a photosensitive film. Form.
The photosensitive film is irradiated with actinic rays or radiation through a predetermined mask, preferably baked (heated), developed and rinsed. Thereby, a good pattern can be obtained.

Examples of the actinic ray or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam, etc., but preferably far ultraviolet light having a wavelength of 250 nm or less, more preferably 220 nm or less. Specifically, KrF excimer laser (248 nm), ArF excimer laser (193 nm), F ₂ excimer laser (157 nm), X-ray, electron beam, etc., more preferably light having a wavelength of 1 nm to 200 nm, particularly ArF Excimer laser, F ₂ excimer laser, EUV (13 nm), and electron beam are preferable.

In the development step, an alkaline developer is used as follows. As an alkaline developer of the resist composition, inorganic hydroxides such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, Secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide and the like Alkaline aqueous solutions such as quaternary ammonium salts, cyclic amines such as pyrrole and pihelidine can be used.
Furthermore, alcohols and surfactants can be added in appropriate amounts to the alkaline developer.
The alkali concentration of the alkali developer is usually from 0.1 to 20% by mass.
The pH of the alkali developer is usually from 10.0 to 15.0.
As the rinsing liquid, pure water can be used, and an appropriate amount of a surfactant can be added.
Further, after the development process or the rinsing process, a process of removing the developer or the rinsing liquid adhering to the pattern with a supercritical fluid can be performed.

Exposure (immersion exposure) may be performed by filling a liquid (immersion medium) having a higher refractive index than air between the resist film and the lens during irradiation with actinic rays or radiation. Thereby, resolution can be improved. As the immersion medium to be used, any liquid can be used as long as it has a higher refractive index than air, but pure water is preferred. Further, an overcoat layer may be further provided on the photosensitive film so that the immersion medium and the photosensitive film do not come into direct contact with each other during the immersion exposure. Thereby, the elution of the composition from the photosensitive film to the immersion medium is suppressed, and development defects are reduced.

The immersion liquid used for the immersion exposure will be described below.
The immersion liquid is preferably a liquid that is transparent to the exposure light and has a refractive index temperature coefficient as small as possible so as to minimize distortion of the optical image projected onto the resist. In the case of an ArF excimer laser (wavelength: 193 nm), it is preferable to use water from the viewpoints of availability and ease of handling in addition to the above-described viewpoints.
Further, a medium having a refractive index of 1.5 or more can be used in that the refractive index can be further improved. This medium may be an aqueous solution or an organic solvent.

  When water is used as the immersion liquid, the surface tension of the water is decreased and the surface activity is increased, so that the resist layer on the wafer is not dissolved and the influence on the optical coating on the lower surface of the lens element can be ignored. An additive (liquid) may be added in a small proportion. The additive is preferably an aliphatic alcohol having a refractive index substantially equal to that of water, and specifically includes methyl alcohol, ethyl alcohol, isopropyl alcohol and the like. By adding an alcohol having a refractive index substantially equal to that of water, even if the alcohol component in water evaporates and the content concentration changes, an advantage that the change in the refractive index of the entire liquid can be made extremely small can be obtained. On the other hand, when an opaque substance or impurities whose refractive index is significantly different from that of water are mixed with respect to 193 nm light, the optical image projected on the resist is distorted. Therefore, distilled water is preferable as the water to be used. Further, pure water filtered through an ion exchange filter or the like may be used.

The electric resistance of water is preferably 18.3 MΩcm or more, the TOC (organic substance concentration) is preferably 20 ppb or less, and deaeration treatment is preferably performed.
Moreover, it is possible to improve lithography performance by increasing the refractive index of the immersion liquid. From such a viewpoint, an additive that increases the refractive index may be added to water, or heavy water (D ₂ O) may be used instead of water.

Since the resist film is not directly brought into contact with the immersion liquid between the resist film of the positive resist composition of the present invention and the immersion liquid, it is also referred to as an “immersion liquid hardly soluble film” (hereinafter referred to as “top coat”). ) May be provided. The necessary functions for the top coat are suitability for application to the upper layer of the resist, radiation, especially transparency to 193 nm, and poor immersion liquid solubility. It is preferable that the top coat is not mixed with the resist and can be uniformly applied to the resist upper layer.
From the viewpoint of 193 nm transparency, the topcoat is preferably a polymer that does not contain an aromatic, and specifically, a hydrocarbon polymer, an acrylate polymer, a polymethacrylic acid, a polyacrylic acid, a polyvinyl ether, a silicon-containing polymer, And fluorine-containing polymers. From the viewpoint of contaminating the optical lens when impurities are eluted from the top coat into the immersion liquid, it is preferable that the residual monomer component of the polymer contained in the top coat is small.

When peeling the top coat, a developer may be used, or a separate release agent may be used. As the release agent, a solvent having a small penetration into the resist is preferable. It is preferable that the peeling process can be performed with an alkali developer in that the peeling process can be performed simultaneously with the resist development process. From the viewpoint of peeling with an alkaline developer, the topcoat is preferably acidic, but may be neutral or alkaline from the viewpoint of non-intermixability with the resist.
The resolution is improved when there is no difference in refractive index between the top coat and the immersion liquid. In the case of using water as the immersion liquid in an ArF excimer laser (wavelength: 193 nm), the top coat for ArF immersion exposure is preferably close to the refractive index of the immersion liquid. From the viewpoint of making the refractive index close to the immersion liquid, it is preferable to have fluorine atoms in the topcoat. A thin film is more preferable from the viewpoint of transparency and refractive index.

  It is preferred that the top coat is not mixed with the resist and further not mixed with the immersion liquid. From this viewpoint, when the immersion liquid is water, the topcoat solvent is preferably a resist solvent hardly soluble and water-insoluble medium. Furthermore, when the immersion liquid is an organic solvent, the topcoat may be water-soluble or water-insoluble.

  When the resist composition of the present invention is used as a resist film, the receding contact angle of water with respect to the resist film is preferably 65 ° or more. Here, the receding contact angle is at normal temperature and pressure. The receding contact angle is the receding contact angle when the droplet starts to drop when the resist film is tilted. In general, the receding contact angle is substantially correlated with the falling angle, and a film having a higher receding contact angle and a smaller falling angle indicates better water repelling.

  EXAMPLES Hereinafter, although an Example demonstrates this invention still in detail, the content of this invention is not limited by this.

Hereinafter, Example 5 shall be read as Reference Example 5.
Examples 1 to 44 and Comparative Examples 1 and 2

Synthesis example (synthesis of resin (1))
Under a nitrogen stream, 8.6 g of cyclohexanone was placed in a three-necked flask and heated to 80 ° C. To this, 9.8 g of 2-adamantyl isopropyl methacrylate, 4.4 g of dihydroxyadamantyl methacrylate, 8.9 g of norbornane lactone methacrylate, and 8 mol% of a polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries) were dissolved in 79 g of cyclohexanone. The solution was added dropwise over 6 hours. After completion of dropping, the reaction was further carried out at 80 ° C. for 2 hours. The reaction solution was allowed to cool and then added dropwise over 20 minutes to a mixture of 800 m of hexane / 200 ml of ethyl acetate, and the precipitated powder was collected by filtration and dried to obtain 19 g of Resin (1). The weight average molecular weight of the obtained resin was 9800 in terms of standard polystyrene, and the dispersity (Mw / Mn) was 1.9.
Resins (2) to (30) were synthesized in the same manner as resin (1).
Resin (31) was synthesized by the same method as in Example 1 of JP-A-2005-156726.

  The structure and composition of the acid-decomposable resin (A) used in the examples, the molecular weight, and the like are shown below. The composition indicates the resin structural formula number and the composition ratio (in order from the left in the structural formula).

Synthesis Example (1) Synthesis of Resins (C-1) and (C-2) 2-Trifluoromethylmethacrylic acid (3,5-bis (1,1,1,3,3,3-hexafluoro-2- 0.06 mol of hydroxypropan-2-yl) cyclohexyl) and 0.04 mol of (5-norbornene-2-methyl) -1,1,1,3,3,3-hexafluoropropan-2-ol did. When this mixture was stirred at 80 ° C. in a nitrogen atmosphere, 1.5 mol% of a polymerization initiator V-59 manufactured by Wako Pure Chemical Industries, Ltd. was added, and the mixture was stirred as it was for 3 hours. Then, it stirred for 12 hours, adding 1.5 mol% of polymerization initiator V-59 every 3 hours. After completion of the reaction, the reaction solution (C-1) was dissolved in 20 mL of THF and cooled to room temperature. The white powder crystallized and precipitated in 800 mL of hexane was collected by filtration to recover the target resin (C-1).
^The polymer composition ratio determined from ¹ HNMR was 60/40 (in order from the left of the structural formula). Moreover, the weight average molecular weight of standard polystyrene conversion calculated | required by GPC measurement was 8800, and dispersion degree was 1.5.

Resin (C-2) was synthesized in the same manner except that the monomer was changed and the charge composition was changed to 70/30 (in order from the left of the structural formula). The polymer composition ratio determined from ¹ HNMR of the resin (C-2) was 68/32. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 11000, and dispersion degree was 1.7.

Synthesis Example (2) Synthesis of Resin (C-3) 0.262 g of di-μ-chlorobis [(η-allyl) palladium (II)] and 0.488 g of silver hexafluoroantimonate were dissolved in 44 mL of chlorobenzene, and at room temperature. Stir. After 20 minutes, the reaction mixture was filtered, and the filtrate was mixed with 20 g of 5-norbornene-1,1,1,3,3,3-hexafluoropropan-2-ol, 0.2 mL of water and 170 mL of chlorobenzene. Add. It is further stirred at room temperature for 20 hours, then added to 1200 mL of methanol, and the precipitated resin is filtered off. Next, the resin is dissolved in 150 mL of chlorobenzene, 30 mL of methanol and 3.2 g of sodium borohydride are added thereto, stirred at room temperature for 3 hours, and further allowed to stand at room temperature for 24 hours. The precipitated particles of Pd (0) are filtered off, and the filtrate is poured into 800 mL of methanol. The precipitated resin was filtered off to obtain the target resin (C-3).
The weight average molecular weight in terms of standard polystyrene determined by GPC measurement was 8,000, and the degree of dispersion was 1.4.

Synthesis Example (3) Synthesis of Resins (C-4) to (C-6) 1,1,1,3,3,3-Hexafluoro-2- (4- (1,1,1,3,3, 20 g of 3-hexafluoro-2-hydroxypropan-2-yl) cyclohexyl) propan-2-yl methacrylate was dissolved in propylene glycol monomethyl ether acetate and dissolved in 70 mL. To this solution, 3 mol% of a polymerization initiator V-601 manufactured by Wako Pure Chemical Industries, Ltd. was added, and this was added dropwise to 10 mL of a propylene glycol monomethyl ether acetate solution heated to 80 ° C. over 6 hours in a nitrogen atmosphere. The reaction liquid was stirred for 2 hours after completion | finish of dripping, and the reaction liquid (C-4) was obtained. After completion of the reaction, the reaction solution (C-4) was cooled to room temperature, crystallized in 4.5 times the amount of hexane, and the precipitated white powder was collected by filtration to recover the target resin (C-4). did.
The weight average molecular weight in terms of standard polystyrene determined by GPC measurement was 8500, and the degree of dispersion was 1.4.

Using the same method as in Synthesis Example (3), Resin (C-5) was synthesized with a charge composition of 80/20 (in order from the left of the structural formula). Methanol was used as a solvent for crystallization. ^The polymer composition ratio determined from ¹ HNMR was 80/20. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 13000, and dispersion degree was 2.1.

Using the same method as in Synthesis Example (3), Resin (C-6) was synthesized with a charge composition of 70/30 (in order from the left of the structural formula). Methanol was used as a solvent for crystallization. ^The polymer composition ratio determined from ¹ HNMR was 70/30. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 18000, and dispersion degree was 2.3.

Using the same method as in Synthesis Example (1), Resin (C-7) was synthesized with a charge composition of 50/50 (in order from the left of the structural formula). Methanol was used as a solvent for crystallization. ^The polymer composition ratio determined from ¹ HNMR was 50/50. Moreover, the weight average molecular weight of standard polystyrene conversion calculated | required by GPC measurement was 5200, and dispersion degree was 1.9.

Using the same method as in Synthesis Example (3), Resin (C-8) was synthesized with a charge composition of 50/50 (in order from the left of the structural formula). Methanol was used as a solvent for crystallization. ^The polymer composition ratio determined from ¹ HNMR was 50/50. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 10200, and dispersion degree was 2.2.

Using the same method as in Synthesis Example (3), Resin (C-9) was synthesized with a charge composition of 60/40 (in order from the left of the structural formula). Hexane was used as a solvent for crystallization. ^The polymer composition ratio determined from ¹ HNMR was 60/40. Moreover, the weight average molecular weight of standard polystyrene conversion calculated | required by GPC measurement was 7200, and dispersion degree was 2.2.

Using the same method as in Synthesis Example (1), Resin (C-10) was synthesized with a charge composition of 30/30/40 (in order from the left of the structural formula). Methanol was used as a solvent for crystallization. ^The polymer composition ratio determined from ¹ HNMR was 32/32/36. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 5600, and dispersion degree was 2.0.

Synthesis Example (4) Synthesis of Resin (C-11) 50 g of methacrylic acid (3,5-bis (1,1,1,3,3,3-hexafluoro-2-hydroxypropan-2-yl) cyclohexyl) Dissolved in propylene glycol monomethyl ether acetate and dissolved in 200 mL. When this mixture was stirred at 80 ° C. in a nitrogen atmosphere, 5 mol% of a polymerization initiator V-601 manufactured by Wako Pure Chemical Industries, Ltd. was added and stirred as it was for 5 hours. After completion of the reaction, the reaction mixture was cooled to room temperature, crystallized in 5-fold amount of hexane, and the precipitated white powder was collected by filtration to recover the target resin (C-11).
The weight average molecular weight in terms of standard polystyrene determined by GPC measurement was 9300, and the degree of dispersion was 1.4.

Resin (C-12) was synthesized using the same method as in Synthesis Example (3) except that the charging composition ratio was changed to 50/50 and the polymerization initiator was changed to 5 mol%. ^The polymer composition ratio determined from ¹ HNMR was 50/50. Moreover, the weight average molecular weight of standard polystyrene conversion calculated | required by GPC measurement was 8800, and dispersion degree was 1.8.

Resin (C-13) was synthesized using the same method as the synthesis method of Resin (C-12) except that the charging composition ratio was 40/30/30. ^The polymer composition ratio determined from ¹ HNMR was 39/30/31. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 6500, and dispersion degree was 1.8.

Resin (C-14) was synthesized using the same method as the synthesis method of Resin (C-12) except that the charging composition ratio was 80/20. ^The polymer composition ratio determined from ¹ HNMR was 78/22. Moreover, the weight average molecular weight of standard polystyrene conversion calculated | required by GPC measurement was 8700, and dispersion degree was 1.8.

Resin (C-15) was synthesized using the same method as the synthesis method of Resin (C-12) except that the charging composition ratio was 80/20. ^The polymer composition ratio determined from ¹ HNMR was 80/20. Moreover, the weight average molecular weight of standard polystyrene conversion calculated | required by GPC measurement was 8800, and dispersion degree was 1.8.

Resin (C-16) was synthesized using the same method as the synthesis method of Resin (C-12) except that the charging composition ratio was 40/60. Methanol was used as a solvent for crystallization. ^The polymer composition ratio determined from ¹ HNMR was 40/60. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 11000, and dispersion degree was 1.9.

Resin (C-17) was synthesized using the same method as the synthesis method of Resin (C-16) except that the charging composition ratio was 30/70. ^The polymer composition ratio determined from ¹ HNMR was 28/72. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 10500, and dispersion degree was 1.9.

Resin (C-18) was synthesized using a method similar to the synthesis method of Resin (C-13). ^The polymer composition ratio determined from ¹ HNMR was 42/20/38. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 7500, and dispersion degree was 2.2.

Resin (C-19) was synthesized using the same method as the synthesis method of Resin (C-16) except that the charging composition ratio was 40/30/30. ^The polymer composition ratio determined from ¹ HNMR was 40/33/27. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 7500, and dispersion degree was 2.2.

Resin (C-20) was synthesized using a method similar to the synthesis method of Resin (C-19). ^The polymer composition ratio determined from ¹ HNMR was 40/30/30. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 8200, and dispersion degree was 2.2.

Resin (C-21) was synthesized using the same method as the synthesis method of Resin (C-12) except that the charging composition ratio was 70/30. ^The polymer composition ratio determined from ¹ HNMR was 65/35. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 5600, and dispersion degree was 2.0.

Resin (C-22) was synthesized using the same method as in Synthesis Example (3) except that the charging composition ratio was 50/50. ^The polymer composition ratio determined from ¹ HNMR was 50/50. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 6200, and dispersion degree was 2.0.

Resin (C-23) was synthesized using the same method as the synthesis method of Resin (C-12) except that the charging composition ratio was 30/50/20. ^The polymer composition ratio determined from ¹ HNMR was 29/50/21. Moreover, the weight average molecular weight of standard polystyrene conversion calculated | required by GPC measurement was 8800, and dispersion degree was 2.0.

Resin (C-24) was synthesized using the same method as in Synthesis Example (3) except that the charging composition ratio was 20/40/20/20. ^The polymer composition ratio determined from ¹ HNMR was 19/42/20/19. Moreover, the standard polystyrene conversion weight average molecular weight calculated | required by GPC measurement was 12000, and dispersion degree was 2.2.

  The structures of the resins (C-1) to (C-24) are shown below.

<Resist preparation>
The components shown in Table 2 below were dissolved in a solvent, and a solution having a solid content of 7% by mass was prepared for each, and this was filtered through a 0.1 μm polyethylene filter to prepare a positive resist solution. The prepared positive resist composition was evaluated by the following method, and the results are shown in the following table. In addition, about each component in a table | surface, ratio when using two or more is a mass ratio.

[Image performance test]
(Exposure condition (1))
An organic antireflection film ARC29A (Nissan Chemical Co., Ltd.) was applied on a silicon wafer and baked at 205 ° C. for 60 seconds to form a 78 nm antireflection film. The positive resist composition prepared thereon was applied and baked at 130 ° C. for 60 seconds to form a 250 nm resist film. The obtained wafer was subjected to pattern exposure using an ArF excimer laser scanner (PAS5500 / 1100, NA0.75, σo / σi = 0.85 / 0.55, manufactured by ASML). Thereafter, the film was heated at 120 ° C. for 90 seconds, developed with an aqueous tetramethylammonium hydroxide solution (2.38 mass%) for 30 seconds, rinsed with pure water, and spin-dried to obtain a resist pattern.

(Exposure condition (2))
This condition is to form a resist pattern by an immersion exposure method using pure water.
An organic antireflection film ARC29A (Nissan Chemical Co., Ltd.) was applied on a silicon wafer and baked at 205 ° C. for 60 seconds to form a 78 nm antireflection film. The positive resist composition prepared thereon was applied and baked at 130 ° C. for 60 seconds to form a 250 nm resist film. The obtained wafer was subjected to pattern exposure using an ArF excimer laser immersion scanner (NA 0.75). Ultra pure water was used as the immersion liquid. Thereafter, heating was performed at 120 ° C. for 60 seconds, followed by development with an aqueous tetramethylammonium hydroxide solution (2.38 mass%) for 30 seconds, rinsing with pure water, and spin drying to obtain a resist pattern.

[Profile]
The profile of the obtained pattern was observed and evaluated with a scanning electron microscope (S-4800, manufactured by Hitachi, Ltd.).

[Pattern collapse evaluation method]
When an exposure amount that reproduces a 130 nm line and space 1: 1 mask pattern is an optimum exposure amount, and a dense pattern of line and space 1: 1 and an isolated pattern of line and space 1:10 are exposed at the optimum exposure amount The line width that resolves the pattern without falling down at the finest mask size was defined as the limit pattern falling line width. A smaller value indicates that a finer pattern is resolved without falling, and pattern falling is less likely to occur.

[Water followability evaluation]
The prepared resist composition was applied onto an 8-inch silicon wafer and baked at 115 ° C. for 60 seconds to form a 150 nm resist film. Next, 15 ml of distilled water was dropped with a pipette at the center of the obtained resist-coated wafer. A 10 cm square quartz plate with a string was placed on the distilled water paddle so that the entire gap between the wafer and the quartz plate was filled with distilled water. FIG. 2 schematically shows the arrangement of the resist-coated wafer, distilled water, and quartz substrate at this time as viewed from the side.
Next, as shown in FIG. 2, with the wafer fixed, the silk thread attached to the quartz plate is wound around the rotating part of the motor that rotates at a speed of 1 cm / sec. Moved. After the movement of the quartz plate, the amount of distilled water remaining under the quartz plate was judged according to the criteria described below and used as an index for water followability.

  FIGS. 3A to 3D schematically show various patterns obtained by observing the quartz plate from above after the quartz plate is moved, and the hatched portion indicates the region of distilled water remaining under the quartz plate. The blank part is an area where water cannot follow the movement of the quartz plate and air has entered. As shown in (a), water remains on the entire surface of the substrate even after the quartz plate is moved, and as shown in (b), the area where air enters is about 10% of the total substrate area. As shown by (triangle | delta) and (c), the area which air enters into 20% or more with respect to the whole board | substrate area was set as x.

[Generation of scum]
An organic antireflection film ARC29A (Nissan Chemical Co., Ltd.) was applied on a silicon wafer and baked at 205 ° C. for 60 seconds to form a 78 nm antireflection film. A positive resist solution prepared to a solid content concentration of 5.5% was applied thereon and baked at 115 ° C. for 60 seconds to form a 160 nm resist film. The obtained wafer was subjected to pattern exposure using an ArF excimer laser scanner (PAS5500 / 1100, NA0.75, σo / σi = 0.85 / 0.55, manufactured by ASLM). Thereafter, heating was performed at 120 ° C. for 60 seconds, followed by development with an aqueous tetramethylammonium hydroxide solution (2.38% by mass) for 30 seconds, rinsing with pure water, and then spin drying to form a pattern.
Evaluation was made based on the degree of development residue (scum) remaining in a resist pattern having a line width of 0.15 microns.

[Measurement of receding contact angle]
The prepared positive resist composition was applied on a silicon wafer and baked at 115 ° C. for 60 seconds to form a 200 nm resist film. The receding contact angle of water droplets was measured by the expansion / contraction method of a dynamic contact angle meter (manufactured by Kyowa Interface Science Co., Ltd.). An initial droplet size of 7 μL was sucked at a speed of 6 μL / second for 8 seconds, and a value with a stable dynamic contact angle during suction was defined as a receding contact angle.

The symbols in Table 2 are as follows.
The acid generator corresponds to that exemplified above.

N-1: N, N-dibutylaniline N-2: N, N-dihexylaniline N-3: 2,6-diisopropylaniline N-4: tri-n-octylamine N-5: N, N-dihydroxyethyl Aniline N-6: 2,4,5-triphenylimidazole N-7: Tris (methoxyethoxyethyl) amine N-8: 2-phenylbenzimidazole

W-1: Megafuck F176 (manufactured by Dainippon Ink & Chemicals, Inc.)
(Fluorine)
W-2: Megafuck R08 (Dainippon Ink Chemical Co., Ltd.)
(Fluorine and silicon)
W-3: Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.)
(Silicon)
W-4: Troisol S-366 (manufactured by Troy Chemical Co., Ltd.)
W-5: PF656 (manufactured by OMNOVA, fluorine-based)
W-6: PF6320 (manufactured by OMNOVA, fluorine-based)

SL-1: Cyclohexanone SL-2: Propylene glycol monomethyl ether acetate SL-3: Ethyl lactate SL-4: Propylene glycol monomethyl ether SL-5: γ-butyrolactone SL-6: Propylene carbonate

Examples 45-51 and Comparative Examples 3, 4
(1) Formation of lower resist layer FHi-028DD resist (resist for i-line manufactured by Fuji Film Orin) was applied to a 6-inch silicon wafer using a spin coater Mark8 manufactured by Tokyo Electron, and baked at 90 ° C. for 90 seconds to form a film. A uniform film having a thickness of 0.55 μm was obtained.
This was further heated at 200 ° C. for 3 minutes to form a lower resist layer having a thickness of 0.40 μm.

(2) Formation of the upper resist layer The components shown in Table 3 below are dissolved in a solvent to prepare a solution having a solid content of 11% by mass, and the solution is precisely filtered through a membrane filter having a diameter of 0.1 μm to prepare an upper resist composition. did. An upper resist composition was applied on the lower resist layer in the same manner as the lower layer, and heated at 130 ° C. for 90 seconds to form an upper resist layer having a thickness of 0.20 μm.

  Resins (SI-1) to (SI-5) in Table 3 are as follows.

(3) Resist evaluation The wafer obtained in this manner was exposed to an ArF excimer stepper 9300 manufactured by ISI with a resolution mask and the exposure amount varied.
Subsequently, after heating at 120 ° C. for 90 seconds, the film was developed with a tetramethylammonium hydroxide developer (2.38 mass%) for 60 seconds, rinsed with distilled water, and dried to obtain an upper layer pattern.

  The obtained pattern was evaluated in the same manner as in Example 1. The evaluation results are shown in Table 3.

  From these results, it can be seen that the resist composition of the present invention has excellent performance in profile, pattern collapse, scum, receding contact angle and water followability in any of normal exposure, immersion exposure and multilayer resist. Recognize.

12 resist-coated wafer 13 string 14 quartz plate 15 distilled water 16 motor 17 area where distilled water remains under the quartz plate 18 area where air enters under the quartz plate

Claims (32)

(A) a resin whose solubility in an alkaline developer is increased by the action of an acid;
(B) a compound that generates an acid upon irradiation with an actinic ray or radiation,
(C) Fluorine-containing compound which is a resin containing at least one group selected from the following groups (x) to (z) [However, the following pentafluoroethyl acrylate (PFPA), the following ethylcyclopentyl methacrylate (ECPMA) and the following Fluorinated terpolymer particles produced by polymerizing trimethylpropane triacrylate (TMPTA) are excluded. ]:
(X) an alkali-soluble group,
(Y) a group that decomposes by the action of an alkali developer and increases the solubility in the alkali developer;
(Z) a group that decomposes by the action of an acid,
And (F) a positive resist composition containing a solvent, and the addition amount of the fluorine-containing compound (C) as a resin is 0.1 to 30% by mass based on the total solid content of the positive resist composition. A pattern forming method comprising the steps of: forming a resist film with a positive resist composition, and performing immersion exposure and development via an immersion liquid.

The pattern forming method according to claim 1, wherein the fluorine-containing compound (C) which is a resin is (x) a fluorine-containing compound having an alkali-soluble group. 2. The fluorine-containing compound (C), which is a resin, is a fluorine-containing compound having a group that is decomposed by the action of (y) an alkali developer and increases the solubility in the alkali developer. The pattern formation method as described.   The pattern forming method according to claim 3, wherein the group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer has a lactone structure. 2. The pattern forming method according to claim 1, wherein the fluorine-containing compound (C) which is a resin is a fluorine-containing compound having a group that is decomposed by the action of (z) acid. The fluorine-containing compound (C) as a resin is an alkali-soluble compound containing an alkyl group having 1 to 4 carbon atoms having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom. The pattern forming method according to claim 1, wherein: The pattern forming method according to any one of claims 1 to 6 , wherein the fluorine-containing compound (C) as a resin has an alcoholic hydroxyl group, and the alcohol part of the alcoholic hydroxyl group is a fluorinated alcohol. The pattern forming method according to claim 1, wherein the fluorine-containing compound (C) as a resin has a structure represented by the following general formula (F3).

In general formula (F3),
R _{62 to} R ₆₃ each independently represents a fluoroalkyl group. R ₆₂ and R ₆₃ may be connected to each other to form a ring.
R ₆₄ represents a hydrogen atom, a fluorine atom or an alkyl group. The pattern forming method according to claim 1, wherein the fluorine-containing compound (C) as a resin is any one of the following (C-1) to (C-13).
(C-1)
A repeating unit (a) having a fluoroalkyl group, and
Resin containing repeating unit (X) containing alkali-soluble group (x).
(C-2)
A repeating unit (a) having a fluoroalkyl group,
Group (y) which decomposes by the action of an alkali developer and increases the solubility in the alkali developer
A resin containing a repeating unit (Y) containing
(C-3)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-4)
A repeating unit (a) having a fluoroalkyl group,
A repeating unit (X) containing an alkali-soluble group (x), and
Group (y) which decomposes by the action of an alkali developer and increases the solubility in the alkali developer
A resin containing a repeating unit (Y) containing
(C-5)
Repeating unit having a fluoroalkyl group (a)
A repeating unit (X) containing an alkali-soluble group (x), and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-6)
Repeating unit having a fluoroalkyl group (a)
Group (y) which decomposes by the action of an alkali developer and increases the solubility in the alkali developer
A repeating unit (Y) containing: and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-7)
A repeating unit (a) having a fluoroalkyl group,
A repeating unit (X) containing an alkali-soluble group (x),
Group (y) which decomposes by the action of an alkali developer and increases the solubility in the alkali developer
Containing repeating units (Y), and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-8)
A resin containing a repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group.
(C-9)
Group (y) which decomposes by the action of an alkali developer and increases the solubility in the alkali developer
And a repeating unit (bY) containing both a fluoroalkyl group.
(C-10)
A repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group having 1 to 4 carbon atoms,
And a resin containing a repeating unit (Y) containing a group (y) that decomposes by the action of an alkali developer and increases the solubility in the alkali developer.
(C-11)
A repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group, and
A resin containing a repeating unit (Z) containing a group (z) that decomposes under the action of an acid.
(C-12)
A repeating unit (a) having a fluoroalkyl group, and
A resin containing a repeating unit (aX) containing both an alkali-soluble group (x) and a fluoroalkyl group.
(C-13)
A repeating unit (a) having a fluoroalkyl group, and
Group (y) which decomposes by the action of an alkali developer and increases the solubility in the alkali developer
And a repeating unit (aY) containing both a fluoroalkyl group. The pattern forming method according to claim 1, wherein the fluorine-containing compound (C) that is a resin has a weight average molecular weight of 1,000 to 100,000. The addition amount of the fluorine-containing compound (C) as a resin is 0.1 to 10% by mass based on the total solid content of the positive resist composition. Pattern forming method. The addition amount of the fluorine-containing compound (C) as a resin is 0.1 to 5% by mass based on the total solid content of the positive resist composition. Pattern forming method.   The pattern forming method according to claim 1, wherein a receding contact angle of the resist film with respect to the water film is 65 ° or more.   The pattern forming method according to claim 1, wherein a receding contact angle of the resist film with respect to the water film is 70 ° or more.   The pattern formation method in any one of Claims 1-14 whose resin (A) is resin which has group which has a lactone ring. The pattern formation method according to claim 15, wherein the group having a lactone ring is a group having a lactone structure represented by the following general formula (LC1-4) or (LC1-5).

In the above general formula,
Rb ₂ represents an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, a carboxyl group, a halogen atom, a hydroxyl group, a cyano group or an acid decomposable group.
n2 represents an integer of 0 to 4. When n2 is 2 or more, a plurality of Rb ₂ may be the same or different, and a plurality of Rb ₂ may be bonded to form a ring. The pattern formation method in any one of Claims 1-16 in which resin (A) has a repeating unit which has the partial structure containing the alicyclic hydrocarbon represented by the following general formula (pI).

In the general formula (pI),
R ₁₁ represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, or a sec-butyl group, and Z is an atom necessary for forming a cycloalkyl group together with a carbon atom. Represents a group.   In the said general formula (pI), the cycloalkyl group which Z forms with a carbon atom is a monocyclic cycloalkyl group, The pattern formation method of Claim 17. The pattern formation method in any one of Claims 1-18 in which resin (A) has a repeating unit which has a partial structure containing the alicyclic hydrocarbon represented by the following general formula (pII).

In the general formula (pII),
R _{12 to} R ₁₄ each independently represents a linear or branched alkyl group or a cycloalkyl group, provided that at least one of R _{12 to} R ₁₄ represents a cycloalkyl group.   The pattern forming method according to claim 1, wherein the resin (A) contains a repeating unit having a polycyclic hydrocarbon group substituted with a hydroxyl group or a cyano group.   Resin (A) is a (meth) acrylate repeating unit having a lactone ring, a (meth) acrylate repeating unit having an organic group having at least one of a hydroxyl group and a cyano group, and a (meth) acrylate having an acid-decomposable group The pattern forming method according to claim 1, which is a copolymer containing at least three components of a repeating unit.   Resin (A) does not have a fluorine atom, The pattern formation method in any one of Claims 1-21 characterized by the above-mentioned. The pattern formation method in any one of Claims 1-22 whose compound (B) which generate | occur | produces an acid by irradiation of actinic light or a radiation is a compound represented by the following general formula (ZI).

In the general formula (ZI),
R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represents an organic group.
X ⁻ represents a non-nucleophilic anion. The pattern formation method according to claim 23, wherein in the general formula (ZI), all of R ₂₀₁ , R ₂₀₂ and R ₂₀₃ are aryl groups. The In formula (ZI), non-nucleophilic anion wherein X ^- is represented by the following formula, a pattern forming method according to claim 23 or 24.
Rc ₁ -SO ₃ ^-
In the above formula, Rc ₁ is an alkyl group, an aryl group, or a plurality of these are a single bond, —O—, —CO ₂ —, —S—, —SO ₃ — or —SO ₂ N (Rd ₁ ) —. Represents a linked group (Rd ₁ represents a hydrogen atom or an alkyl group); The In formula (ZI), non-nucleophilic anion wherein X ^- is represented by the following formula, a pattern forming method according to claim 23 or 24.
^{_{Rc 3 SO 2 -N - -SO 2}} Rc 4
In the above formulas, Rc ₃ and Rc ₄ are each independently an alkyl group, an aryl group, or a plurality of these are a single bond, —O—, —CO ₂ —, —S—, —SO ₃ — or —SO _2. Represents a group linked by N (Rd ₁ ) — (Rd ₁ represents a hydrogen atom or an alkyl group).
Rc ₃ and Rc ₄ may be bonded to form a ring.   The compound (B) that generates an acid upon irradiation with actinic rays or radiation is a compound that generates an acid having a fluoroalkyl chain or a benzenesulfonic acid having a fluorine atom upon irradiation with actinic rays. The pattern formation method in any one of Claims 1-22.   The compound (B) that generates an acid upon irradiation with actinic rays or radiation is a triphenylsulfonium salt compound having an alkyl residue not substituted with fluorine or a cycloalkyl residue not substituted with fluorine in the cation moiety. The pattern forming method according to any one of claims 1 to 22 and 27.   (F) The pattern forming method according to any one of claims 1 to 28, wherein the solvent is a mixed solvent of two or more types containing propylene glycol monomethyl ether acetate.   30. The pattern forming method according to any one of claims 1 to 29, further comprising a fluorine-based and / or silicon-based surfactant.   The pattern formation method according to any one of claims 1 to 30, wherein the total solid concentration in the positive resist composition is 1.0 to 6.0 mass%.   The pattern forming method according to claim 1, wherein exposure is performed with light having a wavelength of 1 nm to 200 nm.

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