JP5188014B2 - Manufacturing method of solid electrolytic capacitor - Google Patents

Description

  The present invention relates to a method for manufacturing a solid electrolytic capacitor in which a solid capacitor element is resin-sealed in a molding die. More specifically, the present invention relates to the arrangement of a gate for injecting resin into the mold when the capacitor element is sealed in the mold using a transfer machine.

  As a high-capacity capacitor used in various electronic devices, a solid body in which a dielectric oxide film, a semiconductor layer, and an electrode layer are sequentially stacked on a sintered body of conductive powder in which an anode lead is implanted on one side of a rectangular parallelepiped shape There is a chip-shaped solid electrolytic capacitor in which an electrolytic capacitor element is sealed with an exterior resin.

  A solid electrolytic capacitor uses a sintered body of conductive powder such as tantalum having fine pores as one electrode (conductor), and a dielectric layer formed on the surface layer of the electrode and on the dielectric layer A solid electrolytic capacitor element composed of the other electrode (usually a semiconductor layer) provided and an electrode layer laminated on the other electrode is sealed with a mold resin. In a conductor having the same volume, the surface area inside the conductor increases as the pores are smaller and the amount of pores is larger, so that the capacity of a capacitor made from the conductor increases. In general, a sintered body with a high CV and a large volume has a fine pore and a long depth, so the filling rate of the semiconductor layer is small, and a sintered body with a large number of unfilled portions of the semiconductor in the pore is The dielectric film deteriorates weakly due to the injection stress of the molten resin at the time of sealing. For this reason, there exists a problem that the LC value yield of the produced solid electrolytic capacitor is bad.

  The resin sealing of the solid electrolytic capacitor element is performed by setting a solid electrolytic capacitor to be sealed in the molding die and injecting the resin from the gate port of the molding die.

  As shown in FIG. 1 which is a cross-sectional view of a rectangular parallelepiped chip-shaped capacitor molding die, an upper die (1) having a rectangular cavity (1a) in the lower portion and a lower die having a rectangular cavity (2a) in the upper portion. (2). 2A and 2B are a cross-sectional view and a vertical cross-sectional view showing a state in which the solid electrolytic capacitor element is housed in a mold.

  An anode lead (4) of a solid electrolytic element is fixed to one end (3a) of a pair of lead frames by spot welding or the like, and a solid electrolytic capacitor element (6) is connected to the other end (3b) bent in a step shape. The main body portion of the lead frame is placed and fixed with silver paste or the like, the lead frame (3) is sandwiched and accommodated in a lead frame groove (not shown) between the upper die (1) and the lower die (2), and the pin It is fixed and sealed, such as by fastening with. For convenience, FIGS. 2A and 2B show only a rectangular cavity portion for the molds (1, 2).

  In this state, a transfer machine is used to inject resin from the resin injection gate port (5) of the mold, and after the resin is cured, the mold is removed and the molded body (chip-shaped solid electrolytic capacitor) is taken out. In this example, the gate port (5) is provided in the upper part on the anode lead frame side of the lower mold (2) at a portion in contact with the upper mold (1).

  In the case of resin sealing using a mold having such a configuration, conventionally, the relationship between the position of the gate port (5) and the LC value of the final solid electrolytic capacitor product has not been considered at all.

  The inventors of the present invention have a problem in strength particularly in the sintered capacitor element of the conductive powder having a high CV, and the final solid state depends on the position of the gate opening of the mold and the position of the solid electrolytic capacitor element in the mold. It was confirmed that the yield rate in which the initial LC (leakage current) value of the electrolytic capacitor product falls within the allowable range changes significantly.

  Accordingly, an object of the present invention is to improve the yield rate in which the LC value of the final solid electrolytic capacitor product is within an allowable range by making the positional relationship between the gate opening of the mold and the solid electrolytic capacitor element in the mold appropriate. It is providing the manufacturing method of a solid electrolytic capacitor element.

As a result of intensive studies to achieve the above-mentioned problems, the present inventor provided an initial LC (leakage current) value within an allowable range by providing the molding resin for injecting the position of the gate opening so as not to directly hit the element. It has been found that the yield of products is significantly improved. That is, when the resin is sealed with a transfer machine using a transfer machine, the resin injection port (gate port) is provided in a place where there is no effect on the capacitor element (where there is no element in the resin injection direction of the gate port). The initial LC yield of the solid electrolytic capacitor is improved. Especially when the CV value of the conductor (sintered body) of the capacitor is 100,000 μF · V / g or more for tantalum, 150,000 μF · V / g or more for niobium, or the volume is 4 mm ³ or more. It was confirmed that the present invention was effective, and the present invention was completed.

  As a prior art related to the present invention, Japanese Patent No. 3071115 (Patent Document 1) is formed by mounting a buffer material (synthetic resin, rubber, paper, etc.) on the surface of the capacitor element facing the gate of the mold. Japanese Patent Application Laid-Open No. 4-357813 (Patent Document 2) discloses a method for reducing the injection pressure of an injection resin for use in molding a capacitor element having a washer for preventing the solid electrolyte from rising. Although a method for reducing the leakage current failure rate by providing a protective resin on the gate side of the mold is disclosed, the arrangement of the mold gate that injects the resin when the capacitor element is sealed with a transfer machine There is no prior art that has been noticed.

Japanese Patent No. 3071115 Japanese Patent Laid-Open No. 4-357813

  The present invention relates to a method for producing a solid electrolytic capacitor described below, a solid electrolytic capacitor obtained by the method, an electronic circuit and an electronic device using the capacitor.

1. In a method of manufacturing a solid electrolytic capacitor, a capacitor element in which a dielectric oxide film, a semiconductor layer and an electrode layer are sequentially laminated on a sintered body of conductive powder connected to an anode lead is sealed in a molding die. A method of manufacturing a solid electrolytic capacitor, wherein the resin is injected from a gate port provided at a position where the resin injected into the capacitor does not directly contact the capacitor element.
2. 2. The method for producing a solid electrolytic capacitor as described in 1 above, wherein the anode lead is wire, foil or plate.
3. 3. The method for producing a solid electrolytic capacitor as described in 1 or 2 above, wherein the material of the anode lead is tantalum, aluminum, niobium, titanium, or an alloy containing these valve metals as a main component.
4). The above-mentioned 1 wherein the conductor is a metal or alloy containing at least one selected from tantalum, niobium, titanium and aluminum, niobium oxide, or a mixture of at least two selected from these metals, alloys and niobium oxide. The manufacturing method of the solid electrolytic capacitor of description.
5. 2. The method for producing a solid electrolytic capacitor as described in 1 above, wherein the sintered body of the conductor powder is a sintered body of a metal or an alloy mainly containing tantalum having a CV value of 100,000 μF · V / g or more.
6). 2. The method for producing a solid electrolytic capacitor as described in 1 above, wherein the sintered body of the conductor powder is a sintered body of a metal or an alloy mainly containing niobium having a CV value of 150,000 μF · V / g or more.
7). 7. The method for producing a solid electrolytic capacitor according to any one of 1 to 6, wherein the sintered body of the conductor powder is a sintered body having a volume of 4 mm ³ or more.
8). A solid electrolytic capacitor produced by the method for producing a solid electrolytic capacitor according to any one of 1 to 7 above.
9. 9. An electronic circuit using the solid electrolytic capacitor as described in 8 above.
10. 9. An electronic device using the solid electrolytic capacitor as described in 8 above.

  The present invention relates to a method of manufacturing a solid electrolytic capacitor in which a capacitor element in which a dielectric oxide film, a semiconductor layer, and an electrode layer are sequentially laminated on a sintered body of a conductive powder to which an anode lead is connected is sealed in a molding die. The present invention provides a method of manufacturing a solid electrolytic capacitor in which resin is injected from a gate port provided at a position where the resin injected into the mold does not directly hit the capacitor element. The yield rate in which the initial LC (leakage current) value falls within the allowable range is remarkably improved.

  An embodiment of a method for producing a solid electrolytic capacitor and a solid electrolytic capacitor of the present invention will be described. The solid electrolytic capacitor of the present invention is produced, for example, by sequentially laminating a dielectric oxide film, a semiconductor layer, and an electrode layer on a sintered body of a conductor powder made of a valve metal.

  As a preferred example of the conductor of the present invention, tantalum, niobium, alloy powders mainly composed of these metals, or powders such as niobium monoxide are formed and sintered. The body and the aluminum foil whose surface was etched can be mentioned. The main component is a component of 50% by mass or more.

When a sintered body is produced using powder having a small particle size, a sintered body having a large specific surface area per mass can be produced. The method of the present invention is effective for a capacitor using such a sintered body as a conductor. For example, in the case of a metal powder whose main component is tantalum, the CV value (product of capacity and conversion voltage when measured with an electrolyte) is 100,000 μF · V / g or more, and the metal powder or niobium monoxide that has niobium as the main component. The method of the present invention is particularly effective when used for a powder having a high CV value (high specific surface area) of 150,000 μF · V / g or more, or a sintered body having a size of 4 mm ³ or more.

  The lead can be directly connected to the conductor. However, if the powdered conductor is molded or formed into a sintered shape after molding, a part of the lead that was prepared separately at the time of molding together with the conductor It is also possible to form the lead-out lead of one electrode of the capacitor at a location outside the molding of the lead-out lead.

  The anode lead may be linear, foil, or plate. Further, the anode lead may be connected after the sintered body is produced without being implanted in the molded body. As the material of the anode lead, tantalum, aluminum, niobium, titanium, or an alloy mainly composed of these valve metals is used. Further, a part of the anode lead may be used after being subjected to at least one treatment selected from carbonization, phosphide, boride, nitridation, sulfidation, and oxidation.

  When the anode lead is implanted in the molded body, the strength of the sintered body can be maintained if the depth of the anode lead in the sintered body is preferably 1/3 or more, more preferably 2/3 or more of the sintered body. This is preferable because resistance to thermal and physical sealing stress at the time of external sealing of the capacitor element described later is improved.

  In order to prevent a capacitor from being short-circuited by a semiconductor layer, which will be described later, attached to the upper part of the anode lead in the case of a conductor having an anode lead, and to the anode part if a part of the conductor is an anode part, Insulation may be achieved by attaching an insulating resin in a headband shape to the boundary between the sintered body and the anode lead or the anode part (anode lead or anode part side).

In the present invention, a dielectric oxide film layer is formed on part of the surfaces of the sintered body and the anode lead. Examples of the dielectric oxide film layer include a dielectric layer mainly composed of at least one selected from metal oxides such as Ta ₂ O ₅ , Al ₂ O ₃ , TiO ₂ , and Nb ₂ O ₅ . The dielectric layer can be obtained by forming the anode substrate in an electrolytic solution.

  A semiconductor layer made of at least one compound selected from an organic semiconductor and an inorganic semiconductor is provided on the dielectric layer of the present invention.

  Specific examples of the organic semiconductor include polyaniline, polyoxyphenylene, polyphenylene sulfide, polythiophene, polyfuran, polypyrrole, polymethylpyrrole, and substituted derivatives and copolymers thereof. Of these, polypyrrole, polythiophene, and substituted derivatives thereof (for example, poly (3,4-ethylenedioxythiophene)) are preferable.

  Specific examples of the inorganic semiconductor include at least one compound selected from molybdenum dioxide, tungsten dioxide, lead dioxide, manganese dioxide and the like.

When the organic semiconductor and the inorganic semiconductor have a conductivity in the range of 10 ⁻² to 10 ³ S / cm, it is preferable because the ESR value of the manufactured capacitor becomes smaller.

  In the present invention, the conductive polymer of the semiconductor layer can be produced by an electrolytic polymerization method, a chemical polymerization method, a gas phase polymerization method, or a combination of these methods, but an electrolytic polymerization method with good ESR at the initial stage of capacitor production is preferred.

  In the present invention, an electrode layer is provided on the semiconductor layer formed by the above-described method or the like. The electrode layer can be formed, for example, by solidification of a conductive paste, plating, metal deposition, adhesion of a heat-resistant conductive resin film, or the like. As the conductive paste, silver paste, copper paste, aluminum paste, carbon paste, nickel paste and the like are preferable. These may be used alone or in combination of two or more. When using 2 or more types, they may be mixed or may be stacked as separate layers. After applying the conductive paste, it is left in the air or heated to solidify. The thickness of the conductive paste layer after solidification is usually about 0.1 to about 200 μm per layer.

  The conductive paste usually contains 40 to 97% by mass of conductive powder. When the content is less than 40% by mass, the conductivity of the produced conductive paste is small, and when it exceeds 97% by mass, the adhesion of the conductive paste is reduced. You may mix and use the conductive polymer and metal oxide powder which form the semiconductor layer mentioned above in the electrically conductive paste.

  Examples of the plating include nickel plating, copper plating, silver plating, gold plating, and aluminum plating. Examples of the deposited metal include aluminum, nickel, copper, silver, and gold.

Specifically, for example, an electrode layer is formed by sequentially laminating a carbon paste and a silver paste on a conductor on which a semiconductor layer is formed.
In this way, a capacitor element in which the cathode layer is formed by stacking up to the electrode layer is manufactured.

  The capacitor element of the present invention having the above-described configuration can be made into a capacitor product for various uses by, for example, an exterior such as a resin mold, a resin case, a metallic exterior case, a resin dipping, or an exterior with a laminate film. Among these, a chip-shaped capacitor with a resin mold is preferable because it can be easily reduced in size and cost.

  As the type of resin used for the resin mold exterior, known resins used for sealing solid electrolytic capacitors such as epoxy resin, phenol resin, alkyd resin, etc. can be adopted, but each resin is generally commercially available with low stress. Use of a resin is preferable because generation of sealing stress to the capacitor element that occurs during sealing can be reduced. A transfer machine is preferably used as a manufacturing machine for sealing the resin.

In the present invention, when sealing the resin, the molding resin for injecting the position of the mold gate port is prevented from directly hitting the element. That is, the flow direction of the resin injected from the gate port is not changed by the capacitor element first. In this way, when the resin molding mouth capacitor element, by Ru provided in the resin injection port location no effect (gate opening) on the capacitor element (resin injection direction element has no location of the gate opening), initial The yield of products whose LC (leakage current) value falls within an allowable range is significantly improved.

  The capacitor manufactured by the present invention can be preferably used for a circuit that requires a high capacity and low ESR capacitor, such as a central processing circuit and a power supply circuit. These circuits can be used in various digital devices such as personal computers, servers, cameras, game machines, DVDs, AV devices, and mobile phones, and electronic devices such as various power supplies. Since the capacitor manufactured according to the present invention has a high capacity and good ESR performance, it is possible to obtain an electronic circuit and an electronic device with good performance by using the capacitor.

  Hereinafter, specific examples of the present invention will be described in more detail, but the present invention is not limited to the following examples.

(1) Production of capacitor element Tantalum sintered body condensed element (element A):
A sintered body having a size of 1.0 × 2.6 × 3.3 mm was produced using a tantalum powder of 150,000 μF · V / g (product of capacity and formation voltage) (sintering temperature 1310 ° C., sintering time 20 Min, mass 58.0mg, sintered body density 5.9g / cm3, tantalum lead wire 0.40mmφ, sintered body with part of tantalum lead wire 3.0mm embedded in parallel with 3.3mm hand direction of sintered body The 10 mm portion of the lead wire protruding from the anode becomes the anode portion). The sintered body to be the anode was immersed in a 1% benzoic acid aqueous solution (chemical conversion solution) except for a part of the lead wire, and 9 V was applied between the cathode and the tantalum plate electrode, and 400 differentiation was performed at 65 ° C. A dielectric oxide film layer made of Ta ₂ O ₅ was formed. Except for the lead wire of this sintered body, immersion in a 20% by mass aqueous solution of toluenesulfonic acid iron and pulling up and drying at 105 ° C. for 15 minutes was repeated 5 times. Subsequently, the sintered body was filled with a tank containing a mixed liquid of 20% by weight ethylene glycol and water sufficiently charged so that a part insoluble in 2% by weight naphthalenesulfonic acid and 3,4-ethylenedioxythiophene monomer was also present. A tantalum foil is affixed to the external electrode), and a semiconductor layer is formed on the dielectric layer by energizing the sintered body with the lead wire as the anode and the external electrode as the cathode at 90 μA for 1 hour at room temperature. did. The sintered body was pulled up, washed with water, washed with alcohol and dried, and further re-formed at 65 ° C. and 7 V for 15 minutes in the same electrolytic solution as the chemical conversion solution. Raise and wash. After washing with alcohol, it was dried for 15 minutes. Such semiconductor layer formation and re-forming steps were performed 6 times to form a semiconductor layer made of a polythiophene derivative having naphthalene sulfonate ions as the main dopant. Subsequently, a carbon paste was deposited on the semiconductor layer and dried, and a silver paste layer was further laminated and then dried to form an electrode layer to produce 38 capacitor elements.

Niobium sintered compact condensate element (element B):
Niobium primary powder (average particle size 0.33μm) ground using the hydrogen embrittlement of niobium ingots is granulated and niobium powder with an average particle size of 140μm (the surface is naturally oxidized because it is a fine powder, and as a whole oxygen 9600ppm Containing). Next, it was left in a nitrogen atmosphere at 450 ° C. and then in an argon atmosphere at 700 ° C. to obtain a partially nitrided niobium powder (CV285000 μF · V / g) with a nitriding amount of 9500 ppm. After forming this niobium powder with a niobium wire of 0.38 mmφ and sintering at 1260 ° C., size 1.0 × 2.6 × 3.3 mm (mass 31.8 mg, niobium wire becomes a lead wire, 3.0 mm inside the sintered body, 38 sintered bodies (conductors) of 10 mm exist outside).

Subsequently, a dielectric layer mainly composed of niobium pentoxide is formed on the surface of the sintered body and a part of the lead wire by chemical conversion with a 10% ammonium benzoate aqueous solution (chemical conversion solution) at 80 ° C. and 20 V for 7 hours. Formed. Subsequently, the sintered body was dipped in a 20% by mass naphthalenesulfonic acid iron alcohol solution, dried, and then re-formed in a 10% by mass toluenesulfonic acid aqueous solution at 80 ° C., 15 V for 15 minutes alternately 5 times. Repeated. Further, the sintered body portion is immersed in a mixed solution of 30% by mass ethylene glycol with 1% by mass anthraquinone sulfonic acid, water sufficiently added so that a part insoluble in pyrrole monomer is present, and the lead wire is used as a solution. Electrolytic polymerization is carried out for 50 minutes by flowing a constant current of 100 μA at 3 ° C. with the stainless steel plate placed in the cathode as the cathode, and after washing from the aqueous solution, washing with water, washing with alcohol and drying, the same electrolyte as the chemical conversion solution Then, re-chemical conversion was performed at 80 ° C. and 14 V for 15 minutes. This electrolytic polymerization and re-chemical conversion were repeated 8 times to form a semiconductor layer made of polypyrrole having an anthraquinone sulfonate ion as a main dopant on the dielectric layer.
Subsequently, a carbon paste was laminated on the semiconductor layer and dried, and further a silver paste was laminated and then dried to form an electrode layer, thereby producing a plurality of solid electrolytic capacitor elements.

(2) Transfer machine Towa Seiki Co., Ltd. TEP12-20EV, Mold: Buy hand mold parts made by Futaba Electronics Co., Ltd., and make the cavity symmetrical with the upper and lower mold partitions, The thickness was 6.0 mm, the width was 3.2 mm, and the depth was 1.8 mm. Also. Each groove of the lead frame and the runner for resin was provided in the lower mold. The gate port has a rectangular shape with a width of 0.5 mm and a height of 0.1 mm. Seven molds were produced in which the position of the gate port was changed as follows.

(1) Mold-1: Lower mold upper part (partition lower part), capacitor side surface (6.0 × 1.8 mm surface), 0.25 mm from anode side (used in Examples 1 and 2),
(3) Mold-3: Lower die upper part (partition lower part), capacitor side surface (6.0 × 1.8 mm surface), 3.9 mm from the anode side (used in Comparative Example 2),
(4) Mold-4: Lower mold upper part (partition lower part), capacitor front face (anode side 3.2 × 1.8 mm surface), 0.25 mm from end (used in Comparative Examples 3 and 8),
(5) Mold-5: Lower mold upper part (partition lower part), capacitor front face (anode side 3.2 x 1.8 mm surface), 1.6 mm from the end (used in Comparative Example 4),
(6) Mold-6: Lower die upper part (partition lower part), capacitor rear face (cathode side 3.2 × 1.8 mm face), 0.25 mm from end (used in Comparative Examples 5 and 9),
(7) Mold-7: Lower die upper part (partition lower part), capacitor rear face (cathode side 3.2 x 1.8 mm face), 1.6 mm from the end (used in Comparative Example 6).

[Lead frame]
Two copper alloy frames C-151 (thickness 0.1 mm, surface nickel 0.7 μm, outer 1 μm tin matte plating) manufactured by Hitachi Cable, Ltd. were used. There are 19 pairs of tip parts (width 2.7 mm, tip part spacing 0.8 mm) (pitch spacing 6.5 mm, each with two 1 mm wide tie bars), total length 131 mm, width 25 mm.

[resin]
A columnar epoxy resin of EME7320A manufactured by Sumitomo Bakelite Co., Ltd. was preheated with a high frequency preheater for 30 seconds and used.

[Molding conditions (sealing conditions)]
After being left for 5 minutes at transfer molding at a temperature of 163 ° C. and a molding pressure of 10 kg / cm ² , the mold was taken out of the machine, and the capacitor connected to the lead frame was obtained after removing the upper and lower molds.

(3) Production of Solid Electrolytic Capacitor The lead wire on the sintered body side (a part of the tip is cut) and the silver paste side (2.6 × 3.3 mm side) of the electrode layer are placed on both ends of the pair of lead frames described above. The sintered body was placed on the former, and the former was spot welded and the latter was electrically and mechanically connected with silver paste. Two such lead frames were prepared for each example. Then, after arranging two lead frames in a mold having different gate openings as shown in Table 1 above, transfer molding is performed with epoxy resin except for a part of the lead frame, and a predetermined portion of the lead frame outside the molding is formed. After cutting, a chip-shaped capacitor element having a size of 6.0 × 3.2 × 1.8 mm was prepared by bending along the exterior to make an external terminal. After that, it was aged at 3 ° C. for 4 hours at 135 ° C., and further allowed to stand at 150 ° C. for 12 hours to produce 38 final solid electrolytic capacitors for each example. In addition, when the molded body is seen through from the 6.0 × 3.2 mm surface, the position of the capacitor element in each example is bilaterally symmetrical in the longitudinal direction, and the position of the anode lead wire tip is 0.6 mm from one tip in the longitudinal direction. The tip of the sintered body (the root of the anode lead wire) was 2.2 mm.

  Of the solid electrolytic capacitors produced in each example, the number of LC values of 0.05 CV (product of rated voltage 2.5 V and capacity) or less was counted to determine the yield.

  From the results in Table 1, the gate port (width 0.5 mm, height 0.1 mm) is placed on the capacitor element (size 3.3 x 2.6 x 1.0 mm) contained in the mold (internal volume 6.0 x 3.2 x 1.8 mm). It can be seen that the yield rate in which the initial LC (leakage current) value of the solid electrolytic capacitor product is within the allowable range is remarkably high in Examples 1 and 2 where the resin is injected by being provided at a position where the resin to be injected does not directly hit.

It is a cross-sectional view of a molding die for chip capacitors. A and B are a transverse sectional view and a longitudinal sectional view, respectively, of a state in which a solid electrolytic capacitor element is housed in a mold.

Explanation of symbols

1 Mold (Upper mold)
1a Cavity 2 Mold (Lower mold)
2a Cavity 3 Lead frame 3a, 3b Lead frame tip 4 Anode lead 5 Mold gate 6 Solid electrolytic capacitor element

Claims (7)

Sintered metal or alloy mainly composed of tantalum having a CV value of 100,000 μF · V / g or connected to the anode lead, or metal mainly composed of niobium having a CV value of 150,000 μF · V / g or more Alternatively, a capacitor element in which a dielectric oxide film, a semiconductor layer and an electrode layer are sequentially laminated on a sintered body of a conductive powder selected from a sintered body of an alloy is electrically and mechanically connected to a lead frame, and the upper die In a manufacturing method of a solid electrolytic capacitor that is molded by sealing a resin in a molding die comprising a lower mold and a gate, a gate port provided at a position on the side of the mold where the resin injected into the mold does not directly hit the capacitor element A method for producing a solid electrolytic capacitor, comprising injecting resin from   The method for producing a solid electrolytic capacitor according to claim 1, wherein the anode lead is a wire, a foil, or a plate.   The method for producing a solid electrolytic capacitor according to claim 1 or 2, wherein the material of the anode lead is tantalum, niobium, or an alloy mainly composed of these valve action metals. The method for manufacturing a solid electrolytic capacitor according to any one of claims 1 to ³ , wherein the sintered body of the conductor powder is a sintered body having a volume of 4 mm ³ or more.   The solid electrolytic capacitor manufactured with the manufacturing method of the solid electrolytic capacitor of any one of Claims 1 thru | or 4.   An electronic circuit using the solid electrolytic capacitor according to claim 5.   An electronic device using the solid electrolytic capacitor according to claim 5.

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