JP5184904B2 - Film forming apparatus and film forming method - Google Patents

Description

  The present invention relates to a film forming apparatus and a film forming method.

A chemical vapor deposition method (CVD: Chemical Vapor Deposition) using a chemical reaction of a raw material gas is used for a manufacturing technique of a large FPD (Flat Panel Display). Known CVD methods include a thermal CVD method in which a chemical reaction proceeds on a substrate surface heated to a high temperature, a plasma CVD method in which a chemical reaction proceeds in a plasma atmosphere. In the thermal CVD method or the plasma CVD method, the substrate is heated to a high temperature or the substrate is exposed to the plasma space, so that there is a problem that the substrate and the base film are easily damaged electrically and thermally. In addition, these CVD methods require high uniformity in plasma density and substrate temperature in order to obtain film thickness uniformity, and thus have a problem that it is difficult to cope with an increase in the size of the substrate. Therefore, in the CVD method, so-called catalytic CVD method, in which the source gas is decomposed into film-forming species by bringing the source gas into contact with a heated catalyst wire such as tungsten in order to solve the above problem, has been attracting attention. Yes.

  In the catalytic CVD method, the surface of the catalyst wire is responsible for the progress of the chemical reaction and does not require plasma irradiation or high-temperature heating of the substrate, so that electrical and thermal damage to the substrate and the underlying film can be greatly suppressed. . Further, since the catalytic CVD method can expand the reaction system simply by increasing the number of catalyst wires, it can cope with the enlargement of the substrate relatively easily.

  On the other hand, in the catalytic CVD method, when the distance between the catalyst wire and the substrate film formation surface becomes short, the amount of film formation species reaching the substrate increases, and conversely, between the catalyst wire and the substrate film formation surface. As the distance increases, the amount of film formation species that reaches the substrate decreases. Therefore, when the distance between the catalyst wire and the substrate film formation surface is greatly different within the surface of the substrate film formation surface, the film thickness uniformity is greatly impaired.

In Patent Document 1, in order to improve the film thickness uniformity, a substrate is erected along the vertical direction, and a plurality of U-shaped catalyst wires extending downward in the vertical direction are respectively formed on the substrate. Suspend along the membrane surface. According to this, even when each of the plurality of catalyst wires is bent by its own weight, each catalyst wire is easily deformed along the vertical direction. Variation is reduced. For this reason, the film thickness of the thin film becomes more uniform in the plane of the substrate film-forming surface as the distance between the substrate film-forming surface and the catalyst wire becomes uniform.
Japanese Patent No. 2000-303182

  FIG. 11 is a diagram showing the inside of the catalytic CVD apparatus 50 used for the catalytic CVD method. As described above, each of the plurality of catalyst lines 51 formed in a U-shape is formed on the substrate S. The state suspended along the surface Sa is shown. FIGS. 12 and 13 are cross-sectional views taken along the line AA of FIG. 11, respectively. FIG. 12 shows a state where no current is supplied to the catalyst wire 51, and FIG. 13 shows a state where current is supplied to the catalyst wire 51.

  In FIG. 11, each catalyst line 51 is divided into a pair of left and right parallel hanging portions 52 extending downward in the vertical direction and a curved connection portion 53 connecting the lower ends of the pair of left and right hanging portions 52. . Each of the plurality of catalyst wires 51 is arranged along the left-right direction so as to cover the entire film formation surface Sa. In FIG. 12, the suspended portions 52 are suspended at substantially equal intervals in the left-right direction along the film formation surface Sa, and the positions where the distances D between the suspension portions 52 and the film formation surface Sa are substantially equal ( Hereinafter, it is simply referred to as an initial position).

  When each catalyst line 51 is heated to a predetermined temperature, a predetermined current I is supplied to each catalyst line 51. When the current I is supplied to the U-shaped catalyst wire 51, the current I flows vertically downward in the input-side hanging part 52, and the current I flows vertically in the output-side hanging part 52. Flows upward in the direction. That is, the current I flows through the pair of left and right hanging portions 52 in directions that cancel each other.

  In FIG. 13, when current I flows through each suspended portion 52, the direction of current I that flows through the suspended portion 52 around each suspended portion 52 is along a closed curve surrounding each suspended portion 52. A magnetic field corresponding to is formed. The charged particles flowing through one suspended portion 52 are divided into a magnetic field generated by a current flowing through the suspended portion 52, a magnetic field generated by a current flowing through the other suspended portion 52, and a magnetic field from the outside of the catalytic CVD apparatus 50. It receives power from the net magnetic field. As a result, each suspended portion 52 is greatly displaced from its initial position according to the intensity distribution of the surrounding magnetic field.

  For example, in FIG. 13, when the geomagnetic vector is directed from left to right, when the current I is supplied to one catalyst line 15, the left suspended portion 52 of each catalyst line 51 receives an upward force, The right suspension part 52 receives a downward force. As a result, each of the catalyst wires 51 receives the current I and rotates clockwise from the initial position, thereby causing a variation in the distance D between the pair of suspended portions 52 and the film formation surface Sa. . As a result, the film thickness uniformity of the thin film is greatly impaired.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a film forming apparatus and a film forming method capable of avoiding displacement of a catalyst wire during current supply.

The film forming apparatus according to claim 1, wherein the film forming surface of the substrate is raised to hold the substrate, the catalyst wire suspended to face the film forming surface, and the catalyst wire is heated. A power source for supplying a current to the catalyst line, and supplying a source gas to the catalyst line to be heated to generate a film-forming species and depositing the film-forming species on the film-forming surface wherein a film formation apparatus for forming a thin film on the film formation surface, the magnetic field applying unit that form a magnetic field that pulling along the deposition surface of the catalytic wire act on charged particles flowing through the catalytic wire The gist is to provide.

  According to the film forming apparatus of the first aspect, the magnetic field formed by the magnetic field application unit restrains the catalyst wire along the film forming surface. Therefore, when current is supplied to the catalyst wire, the catalyst wire is held in a non-contact manner at a predetermined position. Therefore, this film forming apparatus can avoid displacement of the catalyst wire, and by extension, can maintain the distance between the catalyst wire and the film forming surface.

The film forming apparatus according to claim 2 is the film forming apparatus according to claim 1, wherein the holding unit holds the pair of substrates with the film formation surfaces of the pair of substrates facing each other, and The catalyst wire includes a pair of suspended portions suspended in the gap between the pair of substrates, and a connecting portion that connects the lower ends of the pair of suspended portions outside the gap, and the magnetic field application unit includes: is located outside of the gap, and summarized in that a magnetic field that pulling along the connecting portion to the film formation face by acting on the charged particles flowing in the connecting portion.

According to the film forming apparatus of claim 2, the connecting portion of the catalyst wire and the magnetic field applying unit are arranged outside the gap between the pair of substrates, and the magnetic field formed by the magnetic field applying unit Acts on flowing charged particles. Therefore, the connecting portion of the catalyst wire is restrained outside the pair of substrates when the current of the catalyst wire is supplied. Therefore, this film forming apparatus can restrain the catalyst wire while suppressing the action of the magnetic field on the suspended portion, and therefore can avoid displacement of the catalyst wire without affecting the formation reaction of the film forming species.

  The film forming apparatus according to claim 3 is the film forming apparatus according to claim 1 or 2, wherein the catalyst wire includes a pair of suspended portions formed in a straight line shape along a vertical direction, and a horizontal direction. And a connecting portion that connects the lower ends of the pair of hanging portions, and the magnetic field applying unit is provided in the vicinity of the connecting portion, the conductive line along the horizontal direction, and the magnetic field And a power source for supplying a current to the conductive line.

  According to the film-forming apparatus of Claim 3, a connection part and a conductive wire are arrange | positioned along the common horizontal direction, and the electric current which flows through a conductive line forms the magnetic field for constraining a connection part. For this reason, the magnetic field formed by the connecting portion and the magnetic field formed by the conductive wire are formed along the same plane orthogonal to the horizontal direction. Therefore, since this film forming apparatus can make the net magnetic field to the charged particles flowing through the connecting portion simpler, it is possible to reliably avoid displacement of the catalyst wire.

  The film forming apparatus according to claim 4 is the film forming apparatus according to claim 1 or 2, wherein the catalyst wire includes a pair of suspended portions formed in a straight line shape along a vertical direction, and a horizontal direction. And a connecting portion that connects the lower ends of the pair of hanging portions, and the magnetic field application unit includes a magnetic body that is disposed in the vicinity of the connecting portion and forms the magnetic field. The gist.

  According to the film-forming apparatus of Claim 4, a connection part is restrained only by arrange | positioning a magnetic body in the vicinity of a connection part. Therefore, this film forming apparatus can avoid displacement of the catalyst wire under a simpler configuration.

The film formation method according to claim 5, wherein the film formation surface of the substrate is raised to hold the substrate, and current is supplied to the catalyst line suspended so as to face the film formation surface, thereby the catalyst line. Forming a thin film on the film-forming surface by generating a film-forming seed by supplying a source gas to the heated catalyst wire and depositing the film-forming seed on the film-forming surface. a membrane method, and gist that you form a magnetic field that pulling along the deposition surface of the catalytic wire act on charged particles flowing through the catalytic wire.

  According to the film forming method of the fifth aspect, the magnetic field applied to the catalyst wire restrains the catalyst wire along the film formation surface. Therefore, when current is supplied to the catalyst wire, the catalyst wire is held in a non-contact manner along the film formation surface. Therefore, this film forming apparatus can maintain the distance between the catalyst wire and the film forming surface, and can avoid displacement of the catalyst wire.

  As described above, according to the present invention, it is possible to provide a film forming apparatus and a film forming method that can avoid displacement of the catalyst wire during current supply.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a view of a catalytic CVD apparatus 10 as a film forming apparatus as viewed from above in the vertical direction. In FIG. 1, a catalytic CVD apparatus 10 is an in-line film forming apparatus in which a carry-in chamber 11, a plurality of film forming chambers 12, and a carry-out chamber 13 are sequentially connected through a gate valve GV. FIG. 1 shows a configuration in which the catalytic CVD apparatus 10 has two film formation chambers 12.

The carry-in chamber 11 is a vacuum chamber connected to the exhaust line P, and carries the substrate S from the outside into the catalytic CVD apparatus 10. Inside the loading chamber 11, a pair of loading stages 11 </ b> S for supporting the substrate S is disposed. The pair of carry-in stages 11 </ b> S hold the pair of substrates S carried into the carry-in chamber 11 so as to face each other and transfer the pair of substrates S to the film forming chamber 12.

  Each film forming chamber 12 is a vacuum chamber connected to the exhaust line P, is connected to another vacuum chamber via a gate valve GV, and communicates with the other vacuum chamber when the gate valve GV is opened. Each film forming chamber 12 is connected to a gas supply system (not shown), and a raw material gas having a predetermined flow rate is supplied from the gas supply system. Inside each film forming chamber 12, a pair of film forming stages 12S for supporting the substrate S is provided. The pair of film forming stages 12S hold the substrates S from the other vacuum chambers so as to face each other, heat the pair of substrates S to a predetermined temperature, and transport the pair of substrates S to the other vacuum chambers. To do.

  The carry-out chamber 13 is a vacuum chamber connected to the exhaust line P, and carries the substrate S from the adjacent film formation chamber 12 to the outside. Inside the carry-out chamber 13, a pair of carry-out stages 13S for supporting the substrate S are disposed. The pair of unloading stages 13 </ b> S tilt the pair of substrates S loaded into the unloading chamber 13 in the horizontal direction, and unload the pair of substrates S to the outside.

  A plurality of catalyst wires 15 extending downward in the vertical direction are suspended inside the film forming chambers 12 and between the pair of film forming stages 12S. Each catalyst line 15 is arranged along the transport direction of the substrate S. In addition, a pair of restraining wires 20 as a magnetic field application unit extending in the transport direction are stretched inside each film forming chamber 12 so as to sandwich each catalyst wire 15.

  2 is a cross-sectional view showing the inside of the film forming chamber 12 as seen from the film forming surface Sa of the substrate S, and FIG. 3 is a cross-sectional view showing the inside of the film forming chamber 12 as seen from the upper side in the vertical direction. It is AA sectional drawing of FIG. FIG. 4 is a cross-sectional view showing the catalyst wire 15 and the restraining wire 20 as viewed from the transport direction of the substrate S.

  2 and 3, each catalyst wire 15 is a conductive wire made of tantalum, tungsten, molybdenum or the like, and is formed in a U shape extending downward in the vertical direction. Each catalyst line 15 is divided into a pair of left and right parallel suspended portions 16 and a linear connecting portion 17 that connects the lower ends of the pair of left and right suspended portions 16 along the horizontal direction. Each catalyst line 15 is arranged along the left-right direction (transport direction) so as to cover the entire film-forming surface Sa of the substrate S. Each catalyst line 15 is suspended at a position where the distance D between the suspended portion 16 and the film formation surface Sa of the pair of substrates S is substantially equal.

  Each catalyst line 15 is connected in series to an external DC power source. Each catalyst line 15 is heated to a predetermined temperature by receiving a predetermined heating current I1 from a DC power source. The heated catalyst wire 15 is brought into contact with the source gas, thereby activating the source gas and depositing a film-forming species on the film-forming surface Sa of the substrate S. When the heating current I1 is supplied to the catalyst wire 51, the heating current I1 flows downward in the vertical direction in the hanging portion 16 on the input side, and the heating current I1 flows in the vertical direction in the hanging portion 16 on the output side. Flows upward. Then, the heating current I1 flows through the connecting portion 17 from the right side to the left side in FIGS. In the present embodiment, the position of each catalyst wire 15 in a state where the heating current I1 is not supplied is referred to as an initial position.

The pair of restraining wires 20 are conductive wires having thermal and mechanical resistances, are stretched along the horizontal direction, and are positioned and fixed below the connecting portions 17. The pair of restraining wires 20 are connected to an external DC power source via external terminals 18 provided on both the left and right sides of the film forming chamber 12, respectively. When the restraint current I2 from the DC power supply is supplied to the pair of restraint lines 20, the restraint current I2 flows through the pair of restraint lines 20 from the right side to the left side in FIGS. That is, a current in the same direction flows through each constraint line 20 and each connection portion 17.

  In FIG. 4, when the heating current I <b> 1 is supplied to the catalyst wire 15, a counterclockwise connection magnetic field B <b> 1 is formed around the connection portion 17 in the catalyst wire 15 along a closed curve surrounding the connection portion 17. Further, when the restraining current I2 is supplied to the pair of restraining lines 20, a left-handed restraining magnetic field B2 is formed around the pair of restraining lines 20 along a closed curve surrounding the restraining lines 20, respectively. The charged particles flowing in the connecting portion 17 receive a downward force in the vertical direction (hereinafter simply referred to as an acting force F) by the net magnetic field of the connecting magnetic field B1 and each constraining magnetic field B2.

  More specifically, on the side of the constraint line 20 (hereinafter simply referred to as “inside”) across the coupling portion 17, the constraint magnetic field B <b> 2 is formed so as to cancel the coupling magnetic field B <b> 1. Further, on the side opposite to the restraining line 20 (hereinafter simply referred to as the outside) across the connecting portion 17, the restraining magnetic field B2 is formed along the connecting magnetic field B1.

  Therefore, the charged particles flowing through the connecting portion 17 receive a relatively large force by the net magnetic field on the outside, and hardly receive a force by the net magnetic field on the inside. As a result, each connecting portion 17 receives a net force of a force toward one of the constraint lines 20 and a force toward the other constraint line 20, that is, an acting force F downward in the vertical direction.

  As a result, the catalytic CVD apparatus 10 acts in a non-contact manner on each connecting portion 17 by supplying the heating current I1 to each catalyst wire 15 and supplying the restraining current I2 to each restraining wire 20. Force F can be applied. Therefore, the catalytic CVD apparatus 10 can stretch the catalyst wire 15 in a non-contact manner along the vertical direction, regardless of the magnetic field from the outside of the catalytic CVD apparatus 10 or the magnetic field from the other catalytic wires 15. The initial position of each catalyst line 15 can be maintained. As a result, the catalytic CVD apparatus 10 can make the distance D between each suspended portion 16 and the film formation surface Sa uniform, and can make the film thickness distribution on the film formation surface Sa uniform.

According to the first embodiment, the following effects can be obtained.
(1) In the first embodiment, the catalytic CVD apparatus 10 includes a constraining line 20 that forms a constraining magnetic field B2 that acts on charged particles flowing through the catalyst line 15 to constrain the catalyst line 15 along the film formation surface. The constraining line 20 applies a constraining magnetic field B2 to the catalyst line 15. Therefore, when the heating current I1 is supplied to the catalyst wire 15, the catalyst wire 15 is held in the initial position in a non-contact manner. As a result, the catalytic CVD apparatus 10 can avoid the displacement of the catalyst wire 15 and can maintain the distance D between the catalyst wire 15 and the film formation surface Sa.

  (2) In the first embodiment, the film formation stage 12S holds the pair of substrates S with the film formation surfaces Sa of the pair of substrates S facing each other, and the catalyst wire 15 is located between the pair of substrates S. It consists of a pair of hanging parts 16 suspended in the gap and a connecting part 17 that connects the lower ends of the pair of hanging parts 16 outside the gap between the substrates S. The constraining line 20 is disposed below the gap between the substrates S, and acts on the charged particles flowing through the connecting part 17 to form a constraining magnetic field B2 for pulling the connecting part 17 downward.

  Accordingly, the connecting portion 17 of the catalyst wire 15 is restrained outside the pair of substrates S when the current of the catalyst wire 15 is supplied. As a result, the catalytic CVD apparatus 10 can restrain the catalyst wire 15 while suppressing the action of the restraining magnetic field B2 on the suspended portion 16, and therefore can avoid displacement of the catalyst wire 15 without affecting the film formation reaction.

(3) In the first embodiment, the coupling portion 17 and the constraint line 20 are arranged along the common horizontal direction, and the constraint magnetic field B2 for restraining the coupling portion 17 by the constraint current I2 flowing through the constraint line 20. Form. Therefore, the coupling magnetic field B1 formed by the coupling portion 17 and the constraint line 20
Is formed along the same plane orthogonal to the horizontal direction. Therefore, since the catalytic CVD apparatus 10 can make the net magnetic field to the charged particles flowing through the connecting portion 17 more simple, the displacement of the catalyst wire 15 can be surely avoided.

(Second embodiment)
Hereinafter, a second embodiment of the present invention will be described with reference to the drawings. In the second embodiment, the constraint line 20 of the first embodiment is changed. Therefore, in the following, the changes will be described in detail. FIG. 5 is a cross-sectional view showing the inside of the film forming chamber 12 as viewed from the film forming surface Sa of the substrate S, and FIG. 6 is a cross-sectional view taken along the line AA of FIG. FIG. 7 is a cross-sectional view showing the catalyst wire 15 and the magnetic member 30 as viewed from the transport direction of the substrate S.

  5 and 6, a plurality of magnetic members 30 as magnetic field application units are disposed inside the film forming chamber 12 and below the respective connecting portions 17. Each magnetic member 30 is disposed so as to sandwich both sides of each connecting portion 17 when viewed from the vertical direction, and is positioned in the film forming chamber 12 by an attachment member (not shown).

  Each magnetic member 30 includes a magnetic body that forms a constraining magnetic field B <b> 2 along a plane orthogonal to the connecting portion 17. As the magnetic member 30, for example, a permanent magnet that forms a magnetic field without receiving an external current supply, or an electromagnet that forms a magnetic field by receiving an external current supply can be used.

  In FIG. 7, each magnetic member 30 forms a left-handed constraining magnetic field B <b> 2 on the connection portion 17 side. On the side of the magnetic member 30 (hereinafter simply referred to as “inside”) with the coupling portion 17 interposed therebetween, the restraining magnetic field B2 is formed so as to cancel the coupling magnetic field B1. Further, on the opposite side (hereinafter simply referred to as the outside) of the magnetic member 30 with the coupling portion 17 interposed therebetween, the restraining magnetic field B2 is formed along the coupling magnetic field B1.

  Therefore, the charged particles flowing through the connecting portion 17 receive a relatively large force by the net magnetic field on the outside, and hardly receive a force by the net magnetic field on the inside. As a result, each connecting portion 17 receives a net force of a force toward one magnetic member 30 and a force toward the other magnetic member 30, that is, an acting force F downward in the vertical direction.

  As a result, the catalytic CVD apparatus 10 supplies the heating current I1 to each catalyst wire 15 and causes the magnetic members 30 to form a constraining magnetic field B2, thereby lowering each connecting portion 17 in the vertical direction. The acting force F can be applied in a non-contact manner. Therefore, the catalytic CVD apparatus 10 can stretch the catalyst wire 15 in a non-contact manner along the vertical direction. As a result, the catalytic CVD apparatus 10 can make the distance D between each suspended portion 16 and the film formation surface Sa uniform, and can make the film thickness distribution on the film formation surface Sa uniform.

According to the second embodiment, the following effects can be obtained.
(5) In said 2nd embodiment, the magnetic member 30 is provided with the magnetic body for arrange | positioning in the lower vicinity of the connection part 17, and forming the restraint magnetic field B2. Therefore, the catalytic CVD apparatus 10 can restrain the connecting portion 17 only by arranging the magnetic material near the lower side of the connecting portion 17. As a result, the catalytic CVD apparatus 10 can avoid displacement of the catalyst wire 15 under a simpler configuration.

In addition, you may implement the said embodiment in the following aspects.
In the above embodiment, the magnetic field application unit (the generation source of the constraining magnetic field B <b> 2) is disposed below the connecting portion 17. However, the configuration is not limited to this, and the generation source of the restraining magnetic field B <b> 2 may be arranged above the coupling portion 17. At this time, as shown in FIG. 8, the constraining magnetic field B <b> 2 is formed along the coupling magnetic field B <b> 1 on the side of the generation source PB (hereinafter simply referred to as “inside”) with the coupling portion 17 interposed therebetween. In addition, on the side opposite to the generation source PB across the connecting portion 17 (hereinafter simply referred to as the outside), the restraining magnetic field B2 is formed so as to cancel the connecting magnetic field B1.

  According to this, the charged particles flowing through the connecting portion 17 are subjected to a relatively large force by the net magnetic field inside. As a result, the connecting portion 17 receives the net force of the force separating from the one generation source PB and the force separating from the other generation source PB, that is, the acting force F downward in the vertical direction. Therefore, as in the above-described embodiment, the catalytic CVD apparatus 10 can stretch the catalyst wire 15 in a non-contact manner along the vertical direction, and as a result, the film thickness distribution on the film formation surface Sa can be made uniform.

  In the above embodiment, the catalytic CVD apparatus 10 includes a pair of magnetic field application units for one connection portion 17. However, the present invention is not limited to this, and the catalytic CVD apparatus 10 may include one or three or more magnetic field application units with respect to one connection portion 17.

  For example, as shown in FIG. 9, the catalytic CVD apparatus forms a constrained magnetic field B <b> 2 by one magnetic field application unit immediately below the connecting portion 17. And on the lower side across the connecting portion 17, the restraining magnetic field B <b> 2 is formed so as to cancel the connecting magnetic field B <b> 1. In addition, on the upper side across the connecting portion 17, the restraining magnetic field B <b> 2 is formed along the connecting magnetic field B <b> 1.

According to this, since the connecting portion 17 receives the acting force F downward in the vertical direction by one magnetic field applying unit, the film thickness distribution on the film forming surface Sa can be made uniform under a simpler configuration.
In the above embodiment, the connecting portion 17 receives the acting force F downward in the vertical direction. Not only this but the connection part 17 may be the structure which receives the acting force F to the vertical direction upper side. That is, as shown in FIG. 10, the generation source PB of the restraining magnetic field B <b> 2 is disposed above the connection portion 17. Then, on the side of the generation source PB (hereinafter simply referred to as “inside”) with the coupling portion 17 interposed therebetween, the restraining magnetic field B2 is formed so as to cancel the coupling magnetic field B1. In addition, on the side opposite to the generation source PB (hereinafter simply referred to as the outside) across the coupling portion 17, a configuration in which the restraining magnetic field B2 is formed along the coupling magnetic field B1 may be employed.

  According to this, the charged particles flowing through the connecting portion 17 are subjected to a relatively large force by the net magnetic field on the outside. As a result, the movement to the board | substrate S is suppressed with respect to each suspension part 16 by the part to which the acting force F to the vertical direction upper side is applied to the connection part 17. FIG. As a result, the catalytic CVD apparatus 10 can make the distance D between each suspended portion 16 and the film formation surface Sa uniform, and can make the film thickness distribution on the film formation surface Sa uniform.

  In the above embodiment, each catalyst line 15 is connected in series to one DC power source. Not limited to this, each catalyst line 15 may be connected in parallel to one DC power source. Furthermore, each catalyst line 15 may be connected to a different DC power source.

  In the above embodiment, the connecting portion 17 has a linear shape extending along the horizontal direction. Not limited to this, the connecting portion 17 may be linear or curved along the film formation surface Sa. That is, the connecting portion 17 may be configured to receive the acting force F along the film formation surface Sa when the charged particles flowing through the connecting portion 17 receive the restraining magnetic field B2.

  In the above-described embodiment, the constraining wire 20 and the magnetic member 30 constituting the magnetic field applying unit apply a constraining magnetic field B2 to the connecting portion 17, respectively. However, the configuration is not limited to this, and the magnetic field application unit may be configured to apply the restraining magnetic field B <b> 2 to the suspended portion 16. That is, the magnetic field application unit may be configured to form a constraining magnetic field B2 that acts on charged particles flowing through the catalyst wire 15 to restrain the catalyst wire 15 along the film formation surface Sa.

  In the above embodiment, the film formation surface Sa of the substrate S is erected along the vertical direction. The configuration is not limited to this, and the film formation surface Sa of the substrate S may be configured to stand in a direction inclined with respect to the vertical direction.

  -In above-mentioned embodiment, although the connection part 17 is arrange | positioned outside the gap | interval between a pair of board | substrates S, it is not restricted to this, The connection part 17 is a structure arrange | positioned in the gap | interval between a pair of board | substrates S. It may be.

  In the second embodiment, the constraining magnetic field B2 formed by each connecting portion 17 is counterclockwise in FIG. Not limited to this, the constraining magnetic field B2 formed by each connecting portion 17 may be either clockwise or counterclockwise in FIG. At this time, the connecting portion 17 may be configured to form the connecting magnetic field B1 so as to cancel the restraining magnetic field B2 on the side close to the magnetic member 30 corresponding to the connecting portion 17.

The figure which shows a catalytic CVD apparatus typically. Sectional drawing which shows the inside of the film-forming chamber in 1st embodiment. FIG. 3 is a sectional view taken along line AA in FIG. 2. Sectional drawing which shows the effect | action of the magnetic member in 1st embodiment. Sectional drawing which shows the inside of the film-forming chamber in 2nd embodiment. FIG. 6 is a cross-sectional view taken along line AA in FIG. 5. Sectional drawing which shows the effect | action of the magnetic member in 2nd embodiment. Sectional drawing which shows the effect | action of the restraint magnetic field in the example of a change. Sectional drawing which shows the effect | action of the restraint magnetic field in the example of a change. Sectional drawing which shows the effect | action of the restraint magnetic field in the example of a change. The figure which shows typically the catalytic CVD apparatus in a prior art example. Sectional drawing which shows the position of the catalyst wire in a prior art example. Sectional drawing which shows the position of the catalyst wire in a prior art example.

Explanation of symbols

  B1 ... coupled magnetic field, I1 ... heating current, I2 ... restraining current, S ... substrate, Sa ... deposition surface, 12S ... deposition stage as holding part, 10 ... catalytic CVD apparatus as deposition apparatus, 15 ... catalyst wire , 16 ... hanging part, 17 ... connecting part, 20 ... constraint wire as a conductive wire constituting the magnetic field application part, 30 ... magnetic member constituting the magnetic field application part.

Claims (5)

A holding unit for holding the substrate by raising the film-forming surface of the substrate;
A catalyst wire suspended so as to face the film-forming surface;
A power source for supplying a current to the catalyst wire in order to heat the catalyst wire,
A film forming apparatus that forms a thin film on the film forming surface by generating a film forming seed by supplying a source gas to the heated catalyst wire and depositing the film forming seed on the film forming surface. And
Film forming apparatus characterized by comprising a magnetic field applying unit that form a magnetic field that pulling along the deposition surface of the catalytic wire act on charged particles flowing through the catalytic wire. The film forming apparatus according to claim 1,
The holding part is
Holding the pair of substrates with the film-forming surfaces of the pair of substrates facing each other,
The catalyst wire is
A pair of suspended portions suspended in the gap between the pair of substrates, and a connecting portion connecting the lower ends of the pair of suspended portions outside the gap,
The magnetic field application unit includes:
Wherein disposed on the outside of the gap, the film forming apparatus and forming a tensile that the magnetic field along the connecting portion to the film formation face by acting on the charged particles flowing in the connecting portion. The film forming apparatus according to claim 1 or 2,
The catalyst wire is
A pair of hanging parts formed in a straight line along the vertical direction, and a connecting part formed in a straight line along the horizontal direction and connecting the lower ends of the pair of hanging parts,
The magnetic field application unit includes:
A conductive line provided in the vicinity of the connecting portion and extending along the horizontal direction;
A film forming apparatus comprising: a power source for supplying a current to the conductive line to form the magnetic field. The film forming apparatus according to claim 1 or 2,
The catalyst wire is
A pair of hanging parts formed in a straight line along the vertical direction, and a connecting part formed in a straight line along the horizontal direction and connecting the lower ends of the pair of hanging parts,
The magnetic field application unit includes:
A film forming apparatus comprising a magnetic body that is disposed in the vicinity of the connecting portion and forms the magnetic field. While raising the film formation surface of the substrate and holding the substrate, supplying the current to the catalyst wire suspended so as to face the film formation surface, the catalyst wire is heated, and the heated catalyst wire A film forming method for forming a thin film on the film forming surface by generating a film forming seed by supplying a source gas and depositing the film forming seed on the film forming surface,
Film forming method characterized that you form a magnetic field that pulling along the deposition surface of the catalytic wire act on charged particles flowing through the catalytic wire.

Images