JP5172484B2 - Magnetic recording medium manufacturing method and film forming apparatus - Google Patents

Description

The present invention relates to the production side Ho及 BiNarumaku apparatus of the magnetic recording medium.

In recent years, the range of application of magnetic recording devices such as magnetic disk devices, flexible disk devices, and magnetic tape devices has been remarkably increased, and the importance has increased, and the recording density of magnetic recording media used in these devices has increased. Significant improvements are being made.
Particularly in HDD (hard disk drive), since the introduction of MR head and PRML technology, the increase in surface recording density has become more severe, and in recent years, GMR heads and TuMR heads have also been introduced, and about 100% a year. It continues to increase at a pace.

On the other hand, as a magnetic recording system for HDDs, the so-called perpendicular magnetic recording system has been rapidly used in recent years as a technique that replaces the conventional in-plane magnetic recording system (recording system whose magnetization direction is parallel to the substrate surface).
In the perpendicular magnetic recording system, crystal grains in a recording layer for recording information have an easy axis of magnetization in a direction perpendicular to the substrate. This easy magnetization axis means a direction in which the magnetization is easily oriented, and in the case of a commonly used Co alloy, it is an axis (c axis) parallel to the normal line of the (0001) plane of the Co hcp structure. . In the perpendicular magnetic recording method, since the easy axis of magnetization of the magnetic crystal grains is perpendicular, the influence of the demagnetizing field between the recording bits is small even when the high recording density is advanced. It is characterized by stability.
A perpendicular magnetic recording medium is generally formed on a nonmagnetic substrate in the order of an underlayer, an intermediate layer (orientation control layer), a magnetic recording layer, and a protective layer. In many cases, a lubricating layer is applied to the surface after forming a protective layer. In many cases, a magnetic film called a soft magnetic backing layer is provided under the underlayer. The underlayer and the intermediate layer are formed for the purpose of improving the characteristics of the magnetic recording layer. Specifically, it functions to adjust the crystal orientation of the magnetic recording layer and simultaneously control the shape of the magnetic crystal.

In order to increase the recording density of the perpendicular magnetic recording medium, it is necessary to reduce noise while maintaining thermal stability. Two methods are generally used as a method for reducing noise.
The first is a method for reducing the magnetic interaction between magnetic crystal grains by magnetically separating and isolating the magnetic crystal grains in the recording layer, and the second is a method for reducing the size of the magnetic crystal grains. It is.
Specifically, for example, there is a method of forming a perpendicular magnetic recording layer having a so-called granular structure in which SiO ₂ or the like is added to the recording layer and the magnetic crystal grains are surrounded by a grain boundary region containing a large amount of SiO ₂ or the like. (For example, refer to Patent Document 1).

As a method for forming a perpendicular magnetic recording layer having a granular structure, Non-Patent Document 1 discloses that a granular structure is formed by DC magnetron sputtering in an argon-oxygen mixed gas atmosphere using a composite target containing a CoCrPt alloy and SiO _2. A method of forming a recording layer having the following is disclosed. In this document, it is reported that by performing reactive sputtering in an oxygen-containing atmosphere, the coercive force is increased and the recording / reproducing characteristics are improved.
Also, determine the optimum oxygen partial pressure by the concentration of SiO _2, the optimum oxygen partial pressure as SiO ₂ concentration is lower becomes higher, the magnetic characteristics and recording and reproducing characteristics when the oxygen concentration becomes excessive state exceeding the optimum value It has been reported that it deteriorates significantly.

Further, Patent Document 2 discloses that when a sputtering gas and a reactive gas are introduced into a vacuum chamber and a film is formed by reactive sputtering, the concentration of the reactive gas flowing along the surface of the target is made uniform, and the reactivity is increased. A sputtering apparatus that can increase the uniformity of the reaction between a gas and a target and make the film thickness, film quality, and film characteristics uniform is disclosed.
This apparatus is a sputtering apparatus in which a cathode having at least one target is opposed to a substrate and a target is sputtered based on reactive sputtering to deposit a film on the substrate. A central gas introduction mechanism is provided that allows gas to flow outward from the central portion of the cathode unit along the surface of the target.

By the way, when reactive sputtering is performed in an oxygen-containing atmosphere, there is a phenomenon in which the oxygen concentration taken into the magnetic film varies depending on the position on the disk due to the nonuniformity of the oxygen radical concentration distribution in the sputtering chamber. This makes it very difficult to obtain uniform magnetic characteristics and recording / reproducing characteristics over the entire disk surface.
From such a viewpoint, as a result of a detailed study of the methods described in Patent Document 1 and Patent Document 2, the present inventor found that the method described in Patent Document 1 has a plasma space formed near the target surface. However, it became clear that the concentration of oxygen radicals existing in the plasma space became unstable and the granular magnetic layer to be formed became non-uniform.

On the other hand, in the method described in Patent Document 2, a method is proposed in which a reactive gas is allowed to flow outward from the central portion of the cathode unit along the surface of the target. However, the plasma space formed near the surface of the substrate by the gas flow is made to flow downstream and becomes unstable.
In this method, gas flows between the substrate and the plasma, and a non-plasma space is formed at that location.
According to the study by the present inventors, this non-plasma space kills oxygen radicals flying from the plasma space to the substrate surface, reduces the deposition rate by reactive sputtering, and causes nonuniformity of the magnetic film deposited on the substrate surface. It has been elucidated that this causes a non-uniform film thickness distribution.

By the way, in this type of film forming apparatus, the work for loading and unloading the substrate with respect to the plasma generation space of the reaction vessel is an indispensable work. There was a problem that obstructed smooth decompression work during decompression.
For example, if the reaction vessel is thin and the plasma generation space is also thin to form a film on a small substrate, the main decompression device is connected to one side of the thin reaction vessel and the carrier is transported near the plasma generation space. When the apparatus is arranged, the space on the side of the plasma container provided with the carrier transfer device becomes a resistance at the time of depressurization when the pressure is reduced to a vacuum or the like, and the exhaust speed is lowered and it takes time to make a vacuum. It was.

Even if a complicated substrate transfer device is arranged inside the reaction vessel by providing gas exhaust means with vacuum pumps arranged above and below the reaction vessel and connected to the upper and lower portions of the reaction vessel, respectively. The evacuation speed could be increased, and the time for evacuating the reaction vessel could be shortened.
However, when the magnetic properties of the magnetic layer are modified using a reactive gas such as halogen, the reactive gas released from the reactive gas supply port provided near the substrate is In some cases, the surface of a component such as a bearing of a carrier transfer device for taking in and out the substrate is corroded. When the carrier transport device is driven in such a case, the corroded surface may rub and generate dust. Furthermore, this may generate impurity gas, which may deteriorate the magnetic properties of the magnetic layer.
JP 2002-342908 A JP 2004-346406 A IEEE Transactions on Magnetics, Vol. 40, no. 4, July 2004, pp. 2498-2500

  The present invention has been made in view of the above circumstances, and even when a process using a highly reactive gas such as a halogen is performed without corroding the surface of a metal component such as a bearing of a carrier transport device. An object of the present invention is to provide a method of manufacturing a magnetic recording medium, a magnetic recording medium, a magnetic recording / reproducing apparatus, and a film forming apparatus that can manufacture a magnetic recording medium by modifying a magnetic layer in a clean state.

In order to solve the above-mentioned problems, the present inventor has intensively studied to arrive at the present invention. That is, the present invention relates to the following.
(1) A substrate on which a magnetic layer is formed by the substrate transfer device is carried into a reaction vessel provided with gas exhaust means on the upper and lower sides and a substrate transfer device on the lower side, After the substrate is arranged between a pair of plasma generating electrode units arranged inside, a gas containing halogen is supplied to generate a reactive plasma containing halogen ions or a reaction generated in the reactive plasma. A method of manufacturing a magnetic recording medium having a modification step of forming a magnetically separated magnetic recording pattern by partially exposing the surface of the magnetic layer to reactive ions to modify the magnetic layer at the location An exhaust gas generated after partially modifying the magnetic layer in the modification step is exhausted from the upper gas exhaust unit. Production method.
(2) An annular gas inflow pipe provided with a plurality of gas discharge ports along an inner peripheral wall is disposed between the substrate and the electrode surface, and the gas containing the halogen from the plurality of gas discharge ports The method of manufacturing a magnetic recording medium according to (1), wherein the magnetic recording medium is supplied so as to flow from an outer peripheral portion toward a central portion of the substrate by discharging the substrate.
(3) Halogen ions formed by introducing one or more halogenated gases selected from the group consisting of CF ₄ , SF ₆ , CHF ₃ , CCl ₄ , and KBr into the reactive plasma. The method for producing a magnetic recording medium according to (1) or (2), wherein
(4) The method for manufacturing a magnetic recording medium according to any one of (1) to (3), wherein the halogen ions are F ions.
(5) In any one of (1) to (4), the portion of the magnetic layer exposed to the halogen ions does not substantially contain a halide of a substance constituting the magnetic layer. A manufacturing method of the magnetic recording medium described.

(6) After forming a resist pattern on the surface of the magnetic layer, the portion not covered with the resist pattern is exposed to the reactive plasma to modify the magnetic properties of the portion and magnetically separate it. The method for producing a magnetic recording medium according to any one of (1) to (5), wherein a magnetic recording pattern is formed.
(7) The magnetic recording medium according to any one of (1) to (6), wherein the amount of magnetization of the magnetic layer modified by exposure to the reactive plasma is 75% or less of the initial value. Manufacturing method.
(8) The magnetic recording medium according to any one of (1) to (7), wherein the amount of magnetization of the magnetic layer modified by exposure to the reactive plasma is 50% or less of the initial value. Manufacturing method.
(9) The method for manufacturing a magnetic recording medium according to any one of (1) to (8), wherein the reactive plasma contains oxygen ions generated by introducing oxygen gas.
(10) The modifying step includes a step of exposing the magnetic layer to the reactive plasma containing halogen after exposing the magnetic layer to the reactive plasma containing oxygen. (1) The manufacturing method of the magnetic recording medium of any one of (9).
(11) The method for manufacturing a magnetic recording medium according to any one of (1) to (10), wherein ion implantation is partially performed on a surface of the magnetic layer.
(12) The method for producing a magnetic recording medium according to any one of (1) to (11), wherein ions implanted by the ion implantation are argon or nitrogen.
(13) The magnetic recording medium according to any one of (1) to (12), wherein after forming a protective layer on the magnetic layer, a resist pattern is formed on the protective layer. Production method.
(14) The method for manufacturing a magnetic recording medium according to any one of (1) to (13), wherein the magnetic recording pattern is a perpendicular magnetic recording pattern.
(15) The method for manufacturing a magnetic recording medium according to any one of (1) to (14), wherein any one of the gas exhaust means includes a turbo molecular pump.
(16) The method for manufacturing a magnetic recording medium according to any one of (1) to (14), wherein any one of the gas exhaust means includes a cryopump.

( 17 ) A reaction vessel, gas exhaust means provided at the upper and lower portions of the reaction vessel, a substrate transfer device provided at the lower side of the reaction vessel, allowing a substrate to be taken in and out, and the reaction vessel A pair of plasma generating electrode units disposed so that the electrode surfaces are opposed to each other, and when the substrate is disposed between the electrode surfaces so that both surfaces thereof are opposed to the electrode surfaces, Between the electrode surfaces, a plurality of gas discharge ports provided along the circumference on the inner peripheral wall are arranged so as to be able to supply a gas containing halogen from the peripheral side to the center side of the substrate. A film forming apparatus comprising: a pair of annular gas inflow pipes, wherein exhaust gas during or after a reforming reaction by reactive plasma can be discharged mainly by an upper gas exhaust means.
( 18 ) The gas inflow tube allows a gas containing halogen to be freely supplied between the substrate and the electrode surface, and oxygen radicals, oxygen ions, or oxygen are provided between the substrate and the electrode surface. ( 18 ) The film forming apparatus according to ( 17 ), wherein reactive plasma containing any one of atoms is generated.

According to the present invention, even when a process using a highly reactive gas such as a halogen is performed, the magnetic layer can be kept clean without corroding the surfaces of metal parts such as bearings and arms of the substrate transport apparatus. It is possible to provide a magnetic recording medium manufacturing method, a magnetic recording medium, a magnetic recording / reproducing apparatus, and a film forming apparatus that can manufacture a magnetic recording medium by modifying the above.
The method for manufacturing a magnetic recording medium of the present invention is configured to exhaust the exhaust gas generated after partially modifying the magnetic layer from the upper gas exhaust means in the modifying step, and thus occurs after modifying the magnetic layer. The flow of the exhaust gas can be in one direction of the upper gas exhaust means, and even when a process using a highly reactive gas such as halogen is performed, the bearing of the carrier transfer device arranged on the lower side, etc. The magnetic recording medium can be manufactured in a clean state without corroding the surface of the metal parts. In addition, the substrate transfer apparatus does not fail due to corrosion.

  In the method for manufacturing a magnetic recording medium of the present invention, an annular gas inflow pipe provided with a plurality of gas discharge ports along an inner peripheral wall is disposed between a substrate and an electrode surface, and the plurality of gas discharge ports are Since the halogen-containing gas is supplied so that it flows from the outer periphery to the center of the substrate, the generated plasma is displaced from the specified position by the gas flow or the shape of the plasma is distorted. Therefore, the magnetic layer can be quickly modified using a stable and well-formed plasma.

In the method for producing a magnetic recording medium of the present invention, after forming a resist pattern on the surface of the magnetic layer, the magnetic properties of the part are modified by exposing the part not covered with the resist pattern to reactive plasma, Since the magnetic recording pattern is magnetically separated, a high-definition magnetic recording pattern can be formed.
Since the magnetic recording medium of the present invention is manufactured by a method for manufacturing a magnetic recording medium in a cleaner environment, it can be a magnetic recording medium that is free from the influence of defects such as impurity gas and manufacturing dust.

  The magnetic recording / reproducing apparatus of the present invention includes the magnetic recording medium described above, a drive unit for driving the magnetic recording medium in the recording direction, a magnetic head composed of the recording unit and the reproducing unit, and the magnetic head as a magnetic recording medium. And a recording / reproducing signal system in which a recording / reproducing signal processing unit for inputting a signal to the magnetic head and reproducing an output signal from the magnetic head is combined. Therefore, a magnetic recording / reproducing apparatus having a high recording density can be configured. In addition, sufficient reproduction output and high SNR can be obtained.

  The film forming apparatus of the present invention includes a reaction vessel, gas exhaust means provided at the upper and lower portions of the reaction vessel, a substrate transfer device provided at the lower side of the reaction vessel, and allowing the substrate to be taken in and out, When a substrate is arranged between a pair of plasma generating electrode units arranged so that the electrode surfaces face each other inside the reaction vessel and the electrode faces between the electrode surfaces, the substrate and the electrode surfaces A pair of annular gas inflow pipes arranged such that a plurality of gas discharge ports provided along the inner peripheral wall can freely supply a gas containing halogen from the peripheral side to the center side of the substrate And the exhaust gas during or after the reforming reaction by the reactive plasma can be discharged mainly by the upper gas exhaust means, so that the flow of exhaust gas generated after the magnetic layer is reformed is Upper gas The surface of parts such as bearings of the carrier transport device placed on the lower side is corroded even when a process using a highly reactive gas such as halogen is performed. Therefore, the magnetic layer can be quickly modified in a clean state.

(Magnetic recording medium)
The present invention will be described in detail by taking a discrete magnetic recording medium as an example.
FIG. 1 illustrates a cross-sectional structure of a discrete magnetic recording medium that is an embodiment of the present invention.
A magnetic recording medium 30 according to an embodiment of the present invention has a magnetic recording layer 7 in which a magnetic pattern comprising a soft magnetic layer and an intermediate layer 2, a magnetic layer 3, and a non-magnetized layer 4 is formed on the surface of a nonmagnetic substrate 1. And a protective film 5 is formed, and a lubricating film (not shown) is formed on the outermost surface.

In order to increase the recording density, the width W of the magnetic layer 3 having a magnetic pattern is preferably 200 nm or less, and the width L of the non-magnetized layer 4 is preferably 100 nm or less. Accordingly, the track pitch P (= W + L) is in the range of 300 nm or less, and is made as narrow as possible in order to increase the recording density.
The magnetic recording pattern of the magnetic recording layer 7 is a so-called patterned medium in which the magnetic recording pattern is arranged with a certain regularity for each bit, a medium in which the magnetic recording pattern is arranged in a track shape, In addition, servo signal patterns and the like are included.
Discrete type magnetic recording media are also called discrete track type magnetic recording media, etc., and by forming fine grooves on the order of nanometers in the magnetic layer and physically separating the recording tracks, the adjacent tracks can be separated. A magnetic recording medium with reduced magnetic interference, wherein the magnetically separated magnetic recording patterns are magnetic recording tracks and servo signal patterns.

<Non-magnetic substrate>
Examples of the nonmagnetic substrate 1 used in the present invention include an Al alloy substrate such as an Al-Mg alloy mainly composed of Al, ordinary soda glass, aluminosilicate glass, crystallized glass, silicon, titanium, and ceramics. Any substrate can be used as long as it is a non-magnetic substrate such as a substrate made of various resins. Among them, it is preferable to use a glass substrate such as an Al alloy substrate or crystallized glass, or a silicon substrate.
Further, the average surface roughness (Ra) of these substrates is preferably 1 nm or less, more preferably 0.5 nm or less, and particularly preferably 0.1 nm or less.
<Magnetic recording layer>
The magnetic recording layer 7 formed on the surface of the nonmagnetic substrate 1 as described above may be an in-plane magnetic recording layer or a perpendicular magnetic recording layer, but a perpendicular magnetic recording layer is preferable in order to achieve a higher recording density. . These magnetic recording layers are preferably formed from an alloy mainly containing Co as a main component.

<In-plane magnetic recording layer>
For example, as the magnetic recording layer 7 for the in-plane magnetic recording medium, a laminated structure composed of a nonmagnetic CrMo underlayer and a ferromagnetic CoCrPtTa magnetic layer can be used.

<Perpendicular magnetic recording layer>
Examples of the magnetic recording layer 7 for the perpendicular magnetic recording medium include soft magnetic FeCo alloys (FeCoB, FeCoSiB, FeCoZr, FeCoZrB, FeCoZrBCu, etc.), FeTa alloys (FeTaN, FeTaC, etc.), Co alloys (CoTaZr, CoZrNB, CoB, etc.). ), An orientation control film such as Pt, Pd, NiCr, or NiFeCr, an intermediate film such as Ru, if necessary, and a magnetic material composed of 60Co-15Cr-15Pt alloy or 70Co-5Cr-15Pt-10SiO ₂ alloy. It is possible to use a laminate of layers.
The thickness of the magnetic recording layer 7 is 3 nm to 20 nm, preferably 5 nm to 15 nm. The magnetic recording layer 7 may be formed so as to obtain sufficient head input / output according to the type of magnetic alloy used and the laminated structure.
The film thickness of the magnetic recording layer 7 requires a certain thickness of the magnetic layer in order to obtain a certain level of output during reproduction. On the other hand, various parameters representing recording / reproduction characteristics deteriorate as the output increases. Since it is customary, it is necessary to set an optimum film thickness.
Normally, the magnetic recording layer 7 is formed as a thin film by sputtering.

In the present invention, the magnetic recording track and the servo signal pattern portion are magnetically separated from each other by exposing the already formed magnetic layer 3 to reactive plasma to make the magnetic layer 3 in an amorphous state, The magnetic recording layer 7 is formed as the non-magnetized layer 4 by modifying the magnetic characteristics of the portions.
Specifically, the modification of the magnetic properties of the magnetic layer 3 refers to changing the coercive force, residual magnetization, etc. of the magnetic layer 3, and the change refers to lowering the coercive force and lowering the residual magnetization. Point to.

<Modification of magnetic properties>
Particularly in the present invention, as a modification of the magnetic characteristics, the magnetization amount or coercive force of the magnetic layer 3 exposed to the reactive plasma is set to 75% or less, more preferably 50% or less of the initial magnetization amount. It is preferable to adopt a method in which the coercive force is 50% or less, more preferably 20% or less.
By manufacturing a discrete type magnetic recording medium using such a method, it is possible to eliminate writing bleeding when performing magnetic recording on this medium and to provide a magnetic recording medium having a high surface recording density.

<Amorphization of magnetic layer>
In the present invention, making the magnetic layer 3 amorphous means that the atomic arrangement of the magnetic layer 3 is an irregular atomic arrangement having no long-range order, more specifically, less than 2 nm. This means that the microcrystal grains are arranged at random.
When this atomic arrangement state is confirmed by an analytical method, a peak representing a crystal plane is not recognized by X-ray diffraction or electron beam diffraction, and only a halo (broad signal) is recognized. .
<Reactive plasma>
Examples of the reactive plasma of the present invention include inductively coupled plasma (ICP) and reactive ion plasma (RIE).
<Inductively coupled plasma>
The inductively coupled plasma is a high-temperature plasma obtained by generating a plasma by applying a high voltage to a gas and generating Joule heat due to an eddy current in the plasma by a high-frequency variable magnetic field. The inductively coupled plasma has a high electron density, and can improve the magnetic properties with high efficiency in a magnetic film having a large area as compared with the case where a discrete track medium is manufactured using a conventional ion beam.
<Reactive ion plasma>
The reactive ion plasma is a highly reactive plasma in which a reactive gas such as O ₂ , SF ₆ , CHF ₃ , CF ₄ , or CCl ₄ is added to the plasma. By using such plasma as the reactive plasma of the present invention, it is possible to realize the modification of the magnetic properties of the magnetic film with higher efficiency.

<Reaction of magnetic metal with atoms or ions in reactive plasma>
In the present invention, the magnetic layer 3 is modified by exposing the deposited magnetic layer 3 to reactive plasma. This modification is performed by the magnetic metal constituting the magnetic layer 3 and the atoms or ions in the reactive plasma. It is preferable to realize this by the reaction.
Reactions include atoms in reactive plasma entering the magnetic metal, changing the crystal structure of the magnetic metal, changing the composition of the magnetic metal, oxidizing the magnetic metal, or nitriding the magnetic metal. For example, the magnetic metal is silicified.
<Reactive plasma containing oxygen atoms>
Particularly in the present invention, it is preferable to oxidize the magnetic layer 3 by containing oxygen atoms as reactive plasma and reacting the magnetic metal constituting the magnetic layer 3 with oxygen atoms in the reactive plasma.
By partially oxidizing the magnetic layer 3, it is possible to efficiently reduce the remanent magnetization and coercive force of the oxidized portion. Therefore, a magnetic recording pattern separated magnetically by a short reactive plasma treatment This is because it is possible to manufacture a magnetic recording medium having In addition, it becomes possible to promote the amorphization of the magnetic layer 3 by containing oxygen atoms in the reactive plasma.
<Reactive plasma containing halogen atoms>
In the present invention, it is preferable that halogen atoms are contained in the reactive plasma. Further, it is particularly preferable to use an F atom as the halogen atom. The halogen atom may be added to the reactive plasma together with the oxygen atom, or may be added to the reactive plasma without using the oxygen atom.
As described above, by adding oxygen atoms or the like to the reactive plasma, the magnetic metal constituting the magnetic layer 3 reacts with oxygen atoms or the like, thereby improving the magnetic characteristics of the magnetic layer 3. At this time, the reactivity can be further increased by adding halogen atoms to the reactive plasma.

Even when oxygen atoms are not added to the reactive plasma, the halogen atoms react with the magnetic alloy, and the magnetic properties of the magnetic layer 3 can be improved.
Although the details of the reason are not clear, the halogen atoms in the reactive plasma etch foreign matter formed on the surface of the magnetic layer 3, thereby cleaning the surface of the magnetic layer 3 and reacting the magnetic layer 3. It is considered that the property is increased.
It is also conceivable that the cleaned magnetic layer surface and halogen atoms react with high efficiency. It is particularly preferable to use an F atom as the halogen atom having such an effect.

<Protective film>
As the protective film 5, carbonaceous layers such as carbon (C), hydrogenated carbon (H _x C), nitrogenated carbon (CN), amorphous carbon, silicon carbide (SiC), SiO ₂ , Zr ₂ O ₃ , TiN For example, a commonly used protective film material can be used. Further, the protective film 5 may be composed of two or more layers.
The film thickness of the protective film 5 needs to be less than 10 nm. This is because when the thickness of the protective film 5 exceeds 10 nm, the distance between the magnetic head and the magnetic layer 3 increases, and sufficient input / output signal strength cannot be obtained.
A lubricating layer is preferably formed on the protective film 5. Examples of the lubricant used for the lubricating layer include a fluorine-based lubricant, a hydrocarbon-based lubricant, and a mixture thereof, and the lubricating layer is usually formed with a thickness of 1 to 4 nm.

(Magnetic recording / reproducing device)
Next, FIG. 2 shows an example of the configuration of the magnetic recording / reproducing apparatus according to the embodiment of the present invention.
A magnetic recording / reproducing apparatus 300 according to an embodiment of the present invention includes a magnetic recording medium 30 according to the above-described embodiment of the present invention, a drive unit 11 that drives the recording medium 30 in a recording direction, and a magnetic head that includes a recording unit and a reproducing unit. 27, a head driving unit 28 which is a means for moving the magnetic head 27 relative to the magnetic recording medium 30, and a recording / reproducing signal process for performing signal input to the magnetic head 27 and output signal reproduction from the magnetic head 27 And a recording / reproducing signal system 29 in which means are combined.

  By combining these, the magnetic recording / reproducing apparatus 300 with high recording density can be configured. By processing the recording track of the magnetic recording medium 30 magnetically discontinuously, conventionally, the reproducing head width is made narrower than the recording head width in order to eliminate the influence of the magnetization transition region at the track edge portion. Can be operated with both of them approximately the same width. As a result, sufficient reproduction output and high SNR can be obtained.

Furthermore, by configuring the reproducing unit of the magnetic head 27 with a GMR head or a TMR head, a sufficient signal intensity can be obtained even at a high recording density, and a magnetic recording / reproducing apparatus 300 having a high recording density can be realized. Can do.
Further, when the flying height of the magnetic head 27 is 0.005 μm to 0.020 μm, which is lower than the conventional height, the output is improved and a high device SNR can be obtained, and a large capacity and highly reliable magnetic recording / reproducing is obtained. An apparatus 300 can be provided.

(Deposition system)
Next, a film forming apparatus according to an embodiment of the present invention will be described.
3 is a longitudinal sectional view showing an example of a film forming apparatus according to an embodiment of the present invention, FIG. 4 is a side view of the film forming apparatus shown in FIG. 3 as viewed from the right side in FIG. 3, and FIG. It is a top view which shows an example of the gas inflow tube with which the film-forming apparatus shown in FIG. 3 is equipped.

A film forming apparatus 100 according to an embodiment of the present invention includes a vertical and thin reaction vessel (reaction chamber) 101, and a mixture of an inert gas (sputter gas or plasma generation gas) and a reactive gas in the reaction vessel 101. Gas supply means 102 (see FIG. 5) for supplying gas, gas exhaust means (upper exhaust means) 103 and gas exhaust means (lower exhaust means) 104 for exhausting the gas in the reaction vessel 101, and carry-in from the outside And a substrate transfer device 105 for transferring the two processed substrates 200 to a predetermined position. The substrate to be processed 200 is obtained by laminating a soft magnetic layer, an intermediate layer 2 and a magnetic layer 3 on the surface of a nonmagnetic substrate 1.
Between the pair of plasma generating electrode units (electrode units) U1 and U2 in which the electrode surfaces 113a and 115a facing each other are vertically arranged inside the reaction vessel 101, both surfaces of the substrate to be processed 200 are connected to the electrode surfaces 113a and 115a. It arrange | positions so that it may oppose.

<Reaction vessel>
The reaction vessel 101 is a vessel that partitions the outside and the reaction space 101a, has airtightness, and has pressure resistance because the inside is in a high vacuum state.
In the following description, in this reaction vessel 101, the right side wall in FIG. 3 is the “first side wall 106”, the left side wall is the “second side wall 107”, and the depth side wall in FIG. The "third side wall 108" and the side wall on the front side are referred to as "fourth side wall 109 (see FIG. 4)".
<Sidewall>
The first side wall 106 and the second side wall 107 have a slightly vertically long rectangular shape close to a square when viewed from the front as shown in FIG. 4, and form a flat vertically long space between them as shown in FIG. The third side wall 108 and the third side wall 109 having a narrow width are connected to the left and right sides of the first side wall 106 and the second side wall 107, and the side walls 106 to 109 are arranged vertically. A vertically long flat space is defined as a reaction vessel internal space.

<Window part>
A first window 109 to which a first cathode 113 and a second cathode described later are attached is provided on the upper side of the first sidewall 106 of the reaction vessel 101, and a second window 107 is provided on the second side wall 107. The second window 110 to which the third cathode 115 and the fourth cathode are attached adjacent to the left and right are provided so as to face the first window 109.
As shown in FIG. 4, the first window 109 and the second window 110 have a racetrack shape that is horizontally long when viewed from the side, and are formed at the same height so as to face each other.
The first side wall 106 is provided with a small third window 116 for attaching a substrate carry-in chamber 136 described later below the first window 109.

<Cathode (electrode)>
Note that the first cathode 113 to the fourth cathode have the same configuration, two on the first window portion 109 side by side and two on the second window portion 110 side by side. Although attached, in FIG. 3 and FIG.
A first cathode 113 and a second cathode to which power is supplied from a power source (not shown) are attached to the first side wall 106 of the reaction vessel 101, and a power source (not shown) is attached to the second side wall 107. A third cathode 115 and a fourth cathode to which power is supplied are attached.
Specifically, as shown in FIG. 4, the first cathode 113 and the second cathode are arranged in a horizontally long first window 109 provided on the first side wall 106 in a state of being arranged in the horizontal direction. And are hermetically joined through the frame.
In addition, the third cathode 115 and the fourth cathode are hermetically joined to the second window portion 110 provided on the second side wall 107 through a frame in a state of being arranged in the lateral direction.
Each of the first cathode 113 to the fourth cathode is in a vertically placed state in which the electrode surface is substantially orthogonal to the horizontal plane. The first cathode 113 and the third cathode 115 are The surfaces (electrode surfaces) 113a and 115a on the reaction space 101a side face each other, and the second cathode and the fourth cathode are in a positional relationship where the surfaces (electrode surfaces) on the reaction space 101a side face each other. It has become.

<Electrode unit>
In the present embodiment, the first electrode unit U1 constituted by the first cathode 113 and the third electrode unit U2 constituted by the third cathode 115 form a pair, and are constituted by the second cathode. The second electrode unit to be configured and the fourth electrode unit configured by the fourth cathode form a pair.

<Gas inlet pipe>
Inside the reaction vessel 101, a first gas inflow pipe 121 to a fourth gas inflow pipe 124 having the shape shown in FIG.
As shown in FIG. 5, each of the first gas inflow pipe 121 to the fourth gas inflow pipe 124 includes a straight pipe portion 125 extending in one direction and a circle connected to one end of the straight pipe portion 125. A plurality of gas discharge ports 126a are provided on the inner peripheral wall 126c of the annular portion 126 at substantially equal intervals along the circumference.
The hole diameter of the gas discharge port 126a provided in the gas inflow pipe 124 is changed according to the position so that the amount of gas released from each hole is constant according to the position of the straight pipe portion 125 connected to the gas inflow pipe 124. It is preferable. That is, it is preferable to reduce the hole diameter on the upstream side of the gas flowing through each pipe and increase the hole diameter on the downstream side.

The first gas inflow pipe 121 to the fourth gas inflow pipe 124 are connected to the gas supply means 102 provided outside the reaction vessel 101 with the other end of each straight pipe portion 125 extending. Yes.
Further, the gas discharge ports 126 a of the annular portions 126 of the gas inflow pipes 121 to 124 are arranged toward the substrate to be processed 200. That is, each annular portion 126 of the gas inflow pipe is disposed so as to surround the outer periphery of the plasma generation space between each electrode unit and each substrate to be processed.

A valve provided in the middle of each pipe is provided between the gas supply means 102 and the gas inflow pipe. Each of these valves is configured to be opened and closed by a control mechanism (not shown).
The mixed gas delivered by the gas supply device is introduced into the first gas inflow pipe 121 to the fourth gas inflow pipe 124 while the flow rate is controlled by the above-described valves. The mixed gas introduced into each gas inflow pipe passes through the straight pipe portion 125 and flows into the annular portion 126, and, as indicated by the arrows, is processed from the plurality of gas discharge ports 126a arranged in an annular shape. The substrate 200 is discharged from the outer peripheral portion 200b toward the central portion 200a.

<Exhaust means>
Further, as shown in FIG. 3, a gas exhaust means (upper exhaust means) 103 and a gas exhaust means are provided at the first exhaust port 111 and the second exhaust port 112 at the ceiling and bottom of the reaction vessel 101, respectively. (Lower exhaust means) 104 is connected.
The gas evacuation means 103 and 104 are configured to reduce the pressure in the reaction vessel 101 by the operation of the vacuum pump, or to change the gas in the reaction vessel 101 when modifying the magnetic layer 3 and after modifying the magnetic layer 3. Exhaust at a predetermined flow rate. The gas exhaust means 103 and 104 are connected to the vacuum pumps 127, 128, and 129, gate valves 130, 131, and 132 that are connected to the vacuum pumps and controlled to be opened and closed by a control means (not shown), and the gate valves 130 and 131, respectively. And a first exhaust pipe 134 that connects the first exhaust port 111 and a second exhaust pipe 135 that connects the gate valve 132 and the second exhaust port 112.

The exhaust means of the present embodiment has a structure that enables the inside of the reaction vessel 101 to be exhausted at high speed. In order to exhaust the reaction vessel 101 at a high speed, it is necessary to reduce the volume of the reaction vessel 101 while increasing the exhaust capacity of the vacuum pump.
However, when the exhaust capacity of the vacuum pump is increased, the vacuum pump becomes large and the diameter of the flange portion for attaching the vacuum pump to the reaction vessel 101 increases. For this reason, the reaction vessel 101 also needs a large flange, and as a result, the reaction vessel 101 needs to be enlarged.

In the present embodiment, the mounting flanges of the gas exhaust means 103 and 104 are arranged in parallel with the electrode surface of the electrode unit, and the mounting flanges of the two pumps constituting the gas exhaust means 103 are opposed in parallel, so that the exhaust capacity is improved. The volume of the reaction vessel 101 can be reduced despite the large number of large vacuum pumps attached.
Note that the gas exhaust unit 104 may have the same configuration as the gas exhaust unit 103, and the number of vacuum pumps of the gas exhaust unit 104 may be two to further increase the exhaust capacity of the reaction vessel 101.

As the vacuum pumps 127, 128, and 129 used for the gas exhaust means 103 and 104, it is desirable to use a turbo molecular pump or a cryopump, and it is more desirable to use a turbo molecular pump.
Since the turbo molecular pump does not use oil, it has a high cleanliness (cleanness), and a high vacuum is obtained because the exhaust speed is high. Furthermore, highly reactive gas can be exhausted. For this reason, the gas in the reaction vessel 101 can be efficiently exhausted by using the turbo molecular pump.
The cryopump is superior to the turbo molecular pump in terms of exhaust speed and cleanliness, but is a reservoir pump and cannot be used for highly reactive gases such as combustible gas and halogen gas. Moreover, since it is a reservoir type, it is necessary to periodically perform a regeneration process of the pump.
Further, the number of vacuum pumps 127, 128, and 129 included in each gas exhaust means 103 and 104 may be one or a plurality of vacuum pumps. By using a plurality of vacuum pumps, the gas in the reaction vessel 101 can be exhausted more efficiently.
However, if the number of vacuum pumps 101 is excessively large, the apparatus may be increased in size and the power consumption may be increased. Therefore, it is desirable that the number of vacuum pumps provided in each exhausting unit be two.
In the gas exhaust means 103 and 104, the number of vacuum pumps may be the same or different.

In the present embodiment, the gas exhaust unit 103 includes two turbo molecular pumps 127 and 128, and the gas exhaust unit 104 is configured by a single cryopump 129.
For this reason, the gas in the reaction vessel 101 can be efficiently exhausted while suppressing an increase in the size of the apparatus and an increase in power consumption. Since this type of cryopump is a reservoir type pump, there is little generation of impurities from the pump, and the inside of the reaction vessel can be kept in a clean exhaust environment.

Although no special equipment is disposed between the reaction space 101a and the gas exhaust means 103, the first carrier 138 and the second carrier 138 are disposed between the reaction space 101a and the gas exhaust means 104. Since the moving operation mechanism 141 having a complicated shape including the carrier is provided, the gas exhaust means 104 acts effectively to efficiently depressurize the space around the moving operation mechanism 141.
In other words, since the gas exhaust means 104 is provided in the immediate vicinity of the movement operation mechanism 141 and the surrounding space, the movement operation mechanism 141 and the surrounding space can be efficiently decompressed.
Of course, when the gas exhaust means 103 and 104 jointly exhaust, the entire internal space of the reaction vessel 101 can be exhausted more quickly than before.

  In the case where the gas exhaust means 104 is not provided, if the gas exhaust means is provided on the uppermost side of the reaction vessel 101 and a carrier having a complicated structure exists on the lowermost side of the reaction chamber, the carrier portion is likely to become a resistance during decompression. However, when the entire reaction chamber is depressurized to the target state, it takes time longer than necessary, but this problem can be avoided by providing the gas exhaust means 104 in the vicinity of the carrier portion in addition to the gas exhaust means 103. .

<Substrate transfer device>
The substrate transfer device 105 is configured so that the substrate to be processed 200 loaded from the outside is disposed between the pair of plasma generating electrode units U1 and U2 so that both surfaces of the substrate to be processed 200 face the electrode surfaces 113a and 115a. Carry it so that it is in a vertical position.
The substrate transport device 105 includes a substrate carry-in chamber 136, a carrier transport device 137, and a first carrier 138 and a second carrier held by the carrier transport device 137.
Note that the second carrier and the second carrier holding unit described later have the same configuration as the first carrier 138 and the first carrier holding unit described later, and illustration and description thereof are omitted.

<Board loading room>
One end of the substrate loading chamber 136 is fixed around the third window 116 of the reaction vessel 101, and the inside communicates with the space in the reaction vessel 101. As shown in FIGS. 3 and 4, the substrate loading chamber 136 is provided with an opening 139 for loading a substrate from the outside and a door (not shown) for opening and closing the opening 139.
<Carrier transport device>
The carrier transfer device 137 is disposed across the inside of the substrate carry-in chamber 136 and the inside of the reaction vessel 101. The carrier transport device 137 includes a first carrier holding unit 140 that holds the first carrier 138 and a movement operation mechanism 141 that moves the carrier holding unit 140 independently.
<Career>
The first carrier 138 detachably holds a part of the outer peripheral edge of the substrate 200 to be processed, and is moved from the vicinity of the opening 139 of the substrate carry-in chamber 136 by the operation of the moving operation mechanism 141, respectively. Moved downward.

A plurality of N magnets and S magnets are alternately attached to the lower part of the carrier transport device 137 (not shown), and a cylindrical magnet 150 having a plurality of N magnets and S magnets attached in a spiral shape is rotated. Thus, the carrier holding part 140 can be moved in the axial direction of the cylindrical magnet 150 in a non-contact state.
When the substrate is loaded, the first carrier 138 is positioned near the opening of the substrate loading chamber 136. Then, when the substrate 200 to be processed is loaded from the opening 139 of the substrate loading chamber 136 and mounted on the first carrier 138, the carrier 138 is moved to the lower side of the reaction space 101a by the operation of the moving operation mechanism 141. Is done. Thus, the substrate to be processed 200 mounted on the carrier 138 is disposed between the pair of plasma generating electrode units U1 and U2 such that both surfaces of the substrate to be processed 200 face the electrode surfaces 113a and 115a, and It is conveyed so as to be in a vertically placed state.
That is, one of the substrates to be processed 200 is in a state in which both main surfaces thereof are opposed to the electrode surfaces of the first cathode 113 and the third cathode and the distances from the electrode surfaces are substantially equal. Although explanation is omitted, similarly, the other main surface of the other substrate to be processed 200 faces the electrode surfaces of the second cathode and the fourth cathode, and the distance from each electrode surface is the same. It becomes a substantially equal state.
In this state, when electric power is supplied to each of the first cathode 113 to the fourth cathode, the mixed gas supplied to these reaction spaces is turned into plasma.

(Method of manufacturing magnetic recording medium)
Next, a method for manufacturing a magnetic recording medium according to an embodiment of the present invention will be described taking as an example the case where the magnetic recording medium 30 shown in FIG. 1 is manufactured using the film forming apparatus 100 shown in FIG. The same members as those used in FIGS. 1 and 3 are denoted by the same reference numerals.
In the method of manufacturing a magnetic recording medium according to an embodiment of the present invention, a magnetic layer is formed in a reaction vessel provided with gas exhaust means at the upper and lower portions and a substrate transfer device on the lower side by the substrate transfer device. After the formed substrate is carried in and the substrate is disposed between a pair of plasma generating electrode units disposed in the reaction vessel, a gas containing halogen is supplied and a reaction including the generated halogen ions is performed. Magnetically separated magnetic recording patterns are formed by partially exposing the surface of the magnetic layer to reactive plasma or reactive ions generated in the reactive plasma to modify the magnetic layer at that location. A method of manufacturing a magnetic recording medium having a modification step, wherein in the modification step, exhaust gas generated after partially modifying the magnetic layer is sent to the upper gas exhaust means. To exhaust.

<Formation of resist pattern>
In the modification step, a resist pattern matching the magnetic recording pattern is formed on the surface of the magnetic layer 3, and then the surface is treated with reactive plasma, and the portion not covered with the resist pattern is exposed to reactive plasma. Thus, by modifying the magnetic characteristics of the part and forming a magnetically separated magnetic recording pattern, a high-definition magnetic recording pattern can be formed. Thereafter, the resist is removed and the protective layer 5 is formed again, and then a lubricant is applied to manufacture a magnetic recording medium.
First, a resist pattern matching the magnetic recording pattern is formed on the surface of the magnetic layer 3 of the substrate 200 to be processed in which the soft magnetic layer, the intermediate layer 2 and the magnetic layer 3 are formed in this order.
As a resist pattern forming method, a pattern can be formed by applying a normal photolithography technique. As the resist, thermosetting resin, UV curable resin, SOG, or the like can be used. Note that a resist pattern may be formed by applying a resist, bringing a stamper directly into contact therewith, and pressing at a high pressure.

The stamper used in the photolithography process can be, for example, a metal plate with a fine track pattern formed using a method such as electron beam drawing, and the material requires hardness and durability to withstand the process. Is done. For example, Ni or the like can be used, but any material can be used as long as it meets the above purpose.
The stamper can also be formed with servo signal patterns such as a burst pattern, a gray code pattern, and a preamble pattern in addition to a track for recording normal data.

<Reforming process>
As shown in FIG. 3, a substrate to be processed 200 on which a resist pattern has been formed is transferred into a reaction container 101 of a film forming apparatus 100 using a substrate transfer apparatus 105 and placed at a predetermined position.
When the substrate 200 to be processed is mounted on the first carrier 138 and the second carrier of the film forming apparatus 100, the substrate transport apparatus 105 moves each carrier 138 below the reaction space 101a by the operation of the moving operation mechanism 141. Move operation. Accordingly, the substrate to be processed 200 is transported and arranged inside the film forming apparatus 100.

Next, the pressure inside the reaction vessel 101 is reduced. The first gate valve 130 to the third gate valve 132 are opened, and the inside of the reaction vessel 101 and the substrate carry-in chamber 136 are depressurized by the operation of each vacuum pump provided in the gas exhaust means 103 and 104.
Next, a gas containing halogen is discharged from each gas discharge port 126a of each gas inflow pipe 121, 122, 123, 124. Since the gas containing halogen flows in the vicinity of the surface of the substrate to be processed 200 from the outer peripheral portion of the substrate to be processed 200 toward the center, the flow of the mixed gas discharged from the gas discharge port 126a facing each other. Countered by
Next, the first gate valve 130 and the second gate valve 131 are controlled to adjust the flow rate of the gas discharged from the first exhaust port 111 to a predetermined flow rate. As a result, the reacted gas is smoothly exhausted from above the reaction vessel 101 by the upper gas exhaust means 103, so that the reactive plasma space 101a is caused to flow in a specific direction by the flow of the exhausted gas. Less is. Thereby, it is suppressed that gas flows between each to-be-processed substrate 200 and reactive plasma, and non-plasma space is formed in the location.

In this state, a high frequency or a microwave is applied to the first cathode 113 to the fourth cathode. Thereby, in the reaction space 101a corresponding to each cathode, the gas containing halogen generates reactive plasma containing halogen ions, and also generates ions of inert gas in the reactive plasma.
At this time, the reactive plasma formed in the reaction space 101a between the electrode units U1 and U2 and the substrate to be processed 200 is prevented from being disturbed by the flow of the gas containing halogen. Reactive plasma (space) formed in the reaction space 101a between U1 and U2 and the substrate to be processed 200 is stabilized.

By exposing the magnetic layer 3 exposed by the resist pattern to the reactive plasma containing halogen ions, only the exposed portion is modified to form the magnetic recording layer 7 as the non-magnetized layer 4.
As described above, the present invention is manufactured by exposing the surrounding magnetic layer 3 constituting the magnetic recording pattern to reactive plasma or an ionized component in the reactive plasma, and amorphizing the magnetic layer 3 at that location.
When the magnetic layer 3 is exposed to reactive ions or the like, an ionized product of a magnetic alloy is formed at the location. For example, as described in Patent Document 7, when a Co-based magnetic alloy is exposed to fluorine ion plasma, the Co-based magnetic alloy becomes cobalt fluoride and becomes non-magnetic. That is, the ions contained in the reactive plasma are highly reactive and thus easily react with a magnetic alloy or the like.
In the method for manufacturing a magnetic recording medium of the present invention, the magnetic layer 3 exposed to reactive ions or the like is not reacted by reacting the magnetic alloy with ions and demagnetizing the magnetic alloy by the reaction product. The alloy is made amorphous to make it non-magnetic. Therefore, it is possible to prevent the ions used for demagnetizing the magnetic layer 3 from gradually diffusing into the surrounding magnetic alloy constituting the magnetic recording pattern and deteriorating the magnetic characteristics of the portion over time. .

As a method of making a magnetic alloy and reactive plasma react to amorphize the magnetic alloy at the location, a method of physically destroying the structure of the location by colliding ions in the reactive plasma with the magnetic alloy Can be used. Further, a method is conceivable in which the magnetic alloy is reacted with ions in the reactive plasma to generate an ionized product of the magnetic alloy, and then only the compound resulting from the ionization of the magnetic alloy is desorbed.
For example, a Co-based magnetic alloy is exposed to reactive fluorine ions to form non-magnetic cobalt fluoride, and then the cobalt fluoride is heated to desorb only fluorine, so that the crystalline structure is broken. There is a method of forming a Co-based alloy. The production conditions for such an amorphous magnetic alloy can be determined by appropriately setting the composition of the magnetic alloy, the type of ions contained in the reactive plasma, the reaction pressure, the reaction time, the temperature, and the like.

According to the research of the present inventor, when the magnetic layer 3 is modified by reactive plasma containing halogen ions, there are the following structural requirements for controlling the halogenation or amorphization of the magnetic alloy, and the desired modification These were used to do
1) When a bias voltage is applied to the substrate, amorphization easily proceeds. This is presumably because in the magnetic layer 3, the destruction of the crystal structure due to ion impact is more likely to proceed than in the halogenation reaction with halogen ions.
2) When the halogen in the reactive plasma is in a radical state, the halogenation of the magnetic particles is likely to proceed, and when it is in the ionic state, the amorphization of the magnetic particles is likely to proceed. This is presumably because a difference occurs in the reactivity of halogen.
3) When CF ₄ is used for the gas containing halogen, the halogenation of the magnetic grains is likely to proceed, and when SF ₆ is used, the amorphous state is likely to proceed. This is thought to be due to the nature of the halogenated gas.
4) When oxygen is added to the reactive plasma, the amorphization of the magnetic grains tends to proceed. This is probably because oxidation proceeds more easily than halogenation of magnetic particles.
5) In the case where the magnetic layer 3 has a granular structure having an oxide at the grain boundary, the reaction by the halogen ions proceeds from the oxide, so that the halogenation of the magnetic particles is difficult to proceed.

On both surfaces of each substrate 200 to be processed, a magnetic pattern made of a predetermined demagnetization layer 4 is formed, and when the magnetic recording layer 7 is formed, the modification is completed.
The magnetic recording layer 7 formed in this way can form a uniform magnetic pattern in the plane direction and obtain stable recording / reproduction characteristics because the non-magnetized layer 4 is uniformly formed. it can.

In the above reforming step, the exhaust gas generated after the magnetic layer 3 is reformed is preferably exhausted mainly from the upper gas exhaust means 103, more preferably exhausted only from the upper gas exhaust means 103. preferable. That is, it is preferable that the lower gas exhaust means 104 exhausts at a rate lower than the exhaust amount from the upper gas exhaust means 103, and it is more preferable not to use the lower gas exhaust means 104.
As a result, the flow of exhaust gas generated after modifying the magnetic layer 3 becomes exhaust mainly in one direction exhausted in the direction of the upper gas exhaust means 103, and uses a highly reactive gas such as halogen. The magnetic recording medium can be manufactured in a clean state without corroding the surfaces of parts such as bearings of the carrier transfer device 137 arranged on the lower side even when the process is performed.
As a result, the modification rate can be increased and the uniformity of modification of the magnetic layer 3 of each substrate to be processed 200 can be enhanced. That is, the magnetic recording layer 7 with high uniformity of modification can be formed at high speed.

Note that after the surface of the magnetic layer 3 is partially exposed to the reactive plasma to modify the magnetic properties of the magnetic layer 3 at the location, the magnetic layer 3 is exposed to the reactive plasma containing oxygen. It is more preferable to have a step of exposing the magnetic layer 3 to a reactive plasma containing halogen.
By adopting the step of exposing the magnetic layer 3 to the reactive plasma containing oxygen before the step of exposing the magnetic layer 3 to the reactive plasma containing halogen, the speed of modifying the magnetic properties of the magnetic layer 3 is increased. In addition, it is possible to efficiently reduce the residual magnetization and coercive force of the magnetic layer 3.
That is, by exposing the magnetic layer 3 to oxygen-containing plasma, the grain boundary portion of the magnetic particles is preferentially oxidized, and the oxidized region can be advanced in the film thickness direction along the grain boundary, and then the halogen containing When the magnetic layer 3 is exposed to plasma, the oxidized region at the grain boundary of the magnetic particle preferentially reacts with halogen to destroy the crystal structure at the location, and the reaction region proceeds from the grain boundary toward the magnetic particle. Because.
As a result, compared with the case where the magnetic layer 3 is simply exposed to oxygen plasma or halogen plasma, the magnetic properties of the magnetic layer 3 are improved at a higher speed, and the reaction between the magnetic particles and the halogen proceeds more efficiently. This makes it possible to efficiently reduce the residual magnetization and coercive force of the layer 3.

It should be noted that the magnetic layer 3 that has already been formed is formed as a reactive plasma in a region where the magnetic recording pattern portion is magnetically separated so as to have a magnetic recording pattern magnetically separated on at least one surface of the substrate 200 to be processed. Alternatively, the magnetic layer 3 may be made amorphous by exposing it to an ionized component in the reactive plasma.
As described above, the manufacturing method of the magnetic recording medium of the present invention is the same as the conventional manufacturing method in which the magnetic recording pattern portion is magnetically separated by physically cutting the magnetic recording layer by ion milling or the like. Since there is no occurrence, damage such as ion implantation is not given to the magnetic recording layer 7.

<Resist removal>
After the modification step is completed, the substrate to be processed 200 is taken out and the resist is removed.
Removal of the resist after the reactive plasma treatment can be performed using a technique such as dry etching, reactive ion etching, ion milling, or wet etching.
After removing the resist, a protective film is formed. The protective film 5 is generally formed by a method of forming a thin film made of Diamond Like Carbon using a P-CVD method or the like, but is not particularly limited. A lubricating layer is formed on the protective film 5. In this way, the magnetic recording medium 30 is manufactured.

<Formation of resist pattern on protective layer>
In addition, although the example which forms a resist pattern on the magnetic layer 3 was demonstrated, the protective layer 5 was formed on the magnetic layer 3, the resist pattern matched with the magnetic recording pattern was formed on the surface, and then A process of modifying the magnetic layer 3 with reactive plasma can also be employed.
In this case, a resist pattern is formed by applying a resist to the magnetic layer 3 or the protective film 5 formed after the magnetic layer 3, directly attaching a stamper thereon, and pressing at high pressure. Also good.
By adopting this process, it is not necessary to form the protective film 5 after the reactive plasma treatment, the manufacturing process is simplified, and the effects of improving productivity and reducing contamination in the manufacturing process of the magnetic recording medium are obtained. It is done.
The inventors of the present application have confirmed by experiments that it is possible to cause a reaction between the magnetic layer 3 and reactive plasma even after the protective film 5 is formed on the surface of the magnetic layer 3.
The reason why the reaction with the reactive plasma occurs in the magnetic layer 3 that should have been covered with the protective film 5 is that, according to the idea of the inventors of the present application, there are voids in the protective film 5, and plasma is generated from the voids. The reactive ions inside may enter and the reactive ions may react with the magnetic metal. It is also conceivable that reactive ions diffuse in the protective film and reach the magnetic layer 3.

<Ion implantation process>
Furthermore, it is preferable to provide a step of partially ion implanting the surface of the magnetic layer 3 before the modifying step of partially exposing the surface of the magnetic layer 3 to reactive plasma.
By providing this step, the magnetic properties of the magnetic layer 3 can be modified at a higher speed. The reason for this is that, according to the study by the present inventors, the surface of the magnetic layer 3 is activated by partial ion implantation into the surface of the magnetic layer 3, and the step of exposing the magnetic layer 3 to reactive plasma performed thereafter. This is because the reactivity between the magnetic layer 3 and the plasma is further increased.
As ions implanted into the magnetic layer 3, it is preferable to use inert ions such as argon or nitrogen. This is because such inert ions rarely adversely affect the reaction between the magnetic layer 3 and the reactive plasma in the modification step.

  The magnetic recording medium manufacturing method according to the embodiment of the present invention is configured to exhaust the exhaust gas generated after partially modifying the magnetic layer 3 from the upper gas exhaust means 103 in the reforming step. The flow of exhaust gas generated after reforming can be made in one direction of the upper gas exhaust means 103, and even when a process using a highly reactive gas such as halogen is performed, it is arranged on the lower side. The magnetic recording medium 30 can be manufactured in a clean state without corroding the surfaces of parts such as the bearings of the carrier conveying device 137.

In the method for manufacturing a magnetic recording medium according to an embodiment of the present invention, an annular gas inflow pipe 126 provided with a plurality of gas discharge ports 126a along an inner peripheral wall 126c is provided between the substrate 200 and the electrode surfaces 113a and 115a. Since the gas containing halogen is discharged from a plurality of gas discharge ports 126a and supplied to flow from the outer peripheral portion 200b of the substrate 200 toward the central portion 200a, the magnetic layer 3 is modified. Can be performed promptly.
In the method of manufacturing a magnetic recording medium according to an embodiment of the present invention, a halogen ion reacts with at least one halogenated gas selected from the group consisting of CF ₄ , SF ₆ , CHF ₃ , CCl ₄ , and KBr. Since it is a configuration in which halogen ions are introduced and introduced into the neutral plasma, the magnetic properties of the magnetic layer 3 can be improved with higher efficiency.
Since the method of manufacturing a magnetic recording medium according to the embodiment of the present invention is configured such that the halogen ions are F ions, the cleaned magnetic layer 3 surface can react with the halogen atoms with high efficiency. It becomes possible to realize the modification of the magnetic properties with higher efficiency.
In the method of manufacturing a magnetic recording medium according to an embodiment of the present invention, the portion exposed to the halogen ions in the magnetic layer 3 does not substantially contain the halide of the substance constituting the magnetic layer 3, so that the magnetic recording medium is magnetically applied to the medium. It is possible to eliminate writing blur at the time of recording and to provide a magnetic recording medium 30 having a high surface recording density.

  In the method of manufacturing a magnetic recording medium according to an embodiment of the present invention, after a resist pattern is formed on the surface of the magnetic layer 3, the portion not covered with the resist pattern is exposed to reactive plasma to thereby improve the magnetic characteristics of the portion. Since the modified magnetic recording pattern is magnetically separated, a high-definition magnetic recording pattern can be formed.

The method of manufacturing a magnetic recording medium according to an embodiment of the present invention has a configuration in which the amount of magnetization of the magnetic layer 3 modified by exposure to reactive plasma is 75% or less of the initial value. Thus, it is possible to provide a magnetic recording medium 30 having a high surface recording density.
The method of manufacturing a magnetic recording medium according to an embodiment of the present invention has a configuration in which the amount of magnetization of the magnetic layer 3 modified by exposure to reactive plasma is 50% or less of the initial value. Thus, it is possible to provide a magnetic recording medium 30 having a high surface recording density.
In the method of manufacturing a magnetic recording medium according to an embodiment of the present invention, since the reactive plasma contains oxygen ions generated by introducing oxygen gas, the residual magnetization and coercive force of the oxidized portion are efficiently reduced. Therefore, it becomes possible to manufacture the magnetic recording medium 30 having a magnetic recording pattern magnetically separated by a reactive plasma treatment in a short time. In addition, it becomes possible to promote the amorphization of the magnetic layer 3 by containing oxygen atoms in the reactive plasma.

  In the method for manufacturing a magnetic recording medium according to the embodiment of the present invention, the magnetic layer 3 is applied to the reactive plasma containing halogen after the modification step exposes the magnetic layer 3 to reactive plasma containing oxygen. Since the structure includes the exposure step, it is possible to increase the modification speed of the magnetic characteristics of the magnetic layer 3 and to efficiently reduce the remanent magnetization and the coercive force of the magnetic layer 3.

  Since the method for manufacturing a magnetic recording medium according to an embodiment of the present invention is such that the surface of the magnetic layer 3 is partially ion-implanted, the surface of the magnetic layer 3 becomes active, and the subsequent reactive plasma is subjected to the reactive plasma. In the step of exposing the magnetic layer 3, the reactivity between the magnetic layer 3 and the plasma is further enhanced, and the magnetic properties of the magnetic layer 3 can be modified at a higher speed.

Since the method for manufacturing a magnetic recording medium according to an embodiment of the present invention is configured such that ions to be implanted by ion implantation are argon or nitrogen, the magnetic properties of the magnetic layer 3 can be modified at a higher speed.
Since the method for manufacturing a magnetic recording medium according to the embodiment of the present invention is configured to form a resist pattern on the protective layer 5 after forming the protective layer 5 on the magnetic layer 3, the protective film is formed after the reactive plasma treatment. 5 is eliminated, the manufacturing process is simplified, and the effects of improving productivity and reducing contamination in the manufacturing process of the magnetic recording medium are obtained.
The method for manufacturing a magnetic recording medium according to an embodiment of the present invention can achieve a higher recording density because the magnetic recording pattern is a perpendicular magnetic recording pattern.

In the method for manufacturing a magnetic recording medium according to the embodiment of the present invention, since either of the gas exhaust means 103 and 104 includes a turbo molecular pump that does not use oil, the gas in the reaction vessel 101 is efficiently exhausted. High cleanliness and high vacuum can be obtained.
In the method for manufacturing a magnetic recording medium according to an embodiment of the present invention, since either of the gas exhaust means 103 and 104 includes a cryopump, the gas in the reaction vessel 101 is efficiently exhausted, and a high degree of vacuum is achieved. Can be obtained.
Since the magnetic recording medium 30 according to the embodiment of the present invention is manufactured by a method for manufacturing the magnetic recording medium 30 in a cleaner environment, the magnetic recording medium 30 is free from the influence of defects such as impurity gas and manufacturing dust. It can be.
A magnetic recording / reproducing apparatus 300 according to an embodiment of the present invention includes a magnetic recording medium 30 described above, a drive unit 11 that drives the magnetic recording medium 30 in a recording direction, and a magnetic head 27 that includes a recording unit and a reproducing unit. A head drive unit 28 which is a means for moving the magnetic head 27 relative to the magnetic recording medium 30; and a recording / reproduction signal processing means for performing signal input to the magnetic head 27 and reproduction of output signals from the magnetic head 27 Thus, the magnetic recording / reproducing apparatus 300 having a high recording density can be configured. In addition, sufficient reproduction output and high SNR can be obtained.

  A film forming apparatus 100 according to an embodiment of the present invention includes a reaction vessel 101, gas exhaust means 103 and 104 provided in the upper and lower portions of the reaction vessel 101, and a lower side of the reaction vessel 101, respectively. Between the electrode surfaces 113a and 115a, the substrate transfer device 105 that allows the electrode surfaces 113a and 115a to face the inside of the reaction vessel 101, and the electrode surfaces 113a and 115a. A plurality of gas discharge ports provided along the inner peripheral wall 126c between the substrate 200 and the electrode surfaces 113a and 115a when the substrate 200 is disposed so that both surfaces thereof face the electrode surfaces 113a and 115a. A pair of annular gas flows 126a is arranged so that the halogen-containing gas can be supplied from the peripheral side to the center side of the substrate 200. And the tube 126, and the exhaust gas during or after the reforming reaction by the reactive plasma can be discharged mainly by the upper gas exhaust means 103, so that it is generated after the magnetic layer 3 is reformed. The flow of exhaust gas can be in one direction of the direction of the upper gas exhaust means 103, and even when a process using a highly reactive gas such as a halogen is performed, a carrier transport device arranged on the lower side The magnetic layer 3 can be quickly modified in a clean state without corroding the surface of a component such as the bearing 137.

  In the film forming apparatus 100 according to the embodiment of the present invention, a gas containing halogen is freely supplied between the substrate 200 and the electrode surfaces 113a and 115a by the gas inflow pipes 121 to 124, and the substrate 200 and the electrode surface 113a are supplied. , 115a, a reactive plasma containing either oxygen radicals, oxygen ions, or oxygen atoms is generated, so that the magnetic layer 3 can be quickly modified.

Example 1
The vacuum chamber in which the glass substrate for HD was set was evacuated to 1.0 × 10 ⁻⁵ Pa or less in advance. The glass substrate used here is composed of Li ₂ Si ₂ O ₅ , Al ₂ O ₃ —K ₂ O, Al ₂ O ₃ —K ₂ O, MgO—P ₂ O ₅ , and Sb ₂ O ₃ —ZnO. It is made of crystallized glass and has an outer diameter of 65 mm, an inner diameter of 20 mm, and an average surface roughness (Ra) of 2 angstroms (unit: Å, 0.2 nm).

A DC sputtering method is used for the glass substrate, FeCoB as a soft magnetic layer, Ru as an intermediate layer, 70Co-5Cr-15Pt-10SiO ₂ alloy as a magnetic layer, a C (carbon) protective film using a P-CVD method, fluorine Thin films were laminated in the order of the system lubricant film. The thickness of each layer was 600。 for the FeCoB soft magnetic layer, 100Å for the Ru intermediate layer, 150Å for the magnetic layer, and an average of 4 nm for the C (carbon) protective film.
A UV curable resin was applied to the surface with a thickness of 200 nm, and imprinting was performed thereon using a Ni stamper prepared in advance. The stamper had a track pitch of 100 nm and a groove depth of 20 nm. Using this stamper, imprinting was performed on the UV curable resin on the protective film.

This surface was exposed to reactive plasma to modify the magnetic layer in a portion not covered with the UV curable resin. The reactive plasma treatment of the magnetic layer was performed using an inductively coupled plasma apparatus NE550 manufactured by ULVAC. As gas and conditions used for generating plasma, for example, CF ₄ is 10 cc / min, O ₂ is 90 cc / min, input power for generating plasma is 200 W, pressure in the apparatus is 0.5 Pa, substrate bias The surface of the magnetic recording medium was treated for 60 seconds at 200W.
At this time, the exhaust gas generated after modifying the magnetic layer was exhausted only from the upper gas exhaust means, and the lower gas exhaust means was not used. As a result, the flow of exhaust gas generated after modifying the magnetic layer 3 can be exhausted only in one direction exhausted in the direction of the upper gas exhaust means, and a highly reactive gas such as halogen can be used. Although used, it did not corrode the surface of parts such as bearings of the carrier conveying device arranged on the lower side.
Further, when the magnetic film at the location where the reactive plasma treatment was performed was examined by X-ray diffraction, the signal due to Co disappeared, while the signal due to cobalt fluoride was not observed, and the location was not A crystalline structure was confirmed.
A schematic diagram showing the production method of this example is shown in FIG.

Thereafter, the resist on the surface of the magnetic recording medium was removed by dry etching, a carbon protective film was formed on the surface, and finally a fluorine-based lubricating film was applied to complete the manufacture of the magnetic recording medium.
(Examples 2 to 22)
A magnetic recording medium was manufactured in the same manner as in Example 1. At this time, the gas type, input power, reaction pressure, and reaction time used for the reactive plasma were changed as shown in Table 1. In Examples 2 to 22, when the magnetic film at the location where the reactive plasma treatment was performed was examined by the X-ray diffraction method, the signal attributed to Co disappeared, while the signal attributed to cobalt fluoride was not observed. In all of Examples 2 to 22, it was confirmed that the portion had an amorphous structure. In either case, the surfaces of parts such as bearings of the carrier conveying device arranged on the lower side were not corroded.

(Comparative Example 1)
A magnetic recording medium was manufactured under the same conditions as in Example 1, but no bias voltage was applied to the substrate and oxygen was not added to the plasma gas during the reactive plasma treatment of the magnetic layer. Further, exhaust gas generated after modifying the magnetic layer during the surface treatment was exhausted from the upper and lower gas exhaust means. Thereby, a part of surface of parts, such as a bearing of the carrier conveyance apparatus arrange | positioned at the lower side, corroded.
Regarding the manufactured magnetic recording medium, the magnetic film at the location where the reactive plasma treatment was performed was examined by X-ray diffraction. As a result, the signal attributed to Co disappeared, while the signal attributed to cobalt fluoride was observed. . In addition, no broad signal due to Co amorphization was observed.

Magnetization reduction amount, coercive force reduction amount, electromagnetic conversion characteristics (SNR and 3T-squash), surface roughness (Ra), head flying height (glide avalanche) of the magnetic recording media of Examples 1 to 22 manufactured by the above method ) Was measured.
Evaluation of electromagnetic conversion characteristics was performed using a spin stand. At this time, the SNR value and 3T-squash when a 750 kFCI signal was recorded were measured using a perpendicular recording head for recording and a TuMR head for reading. FIG. 7 shows changes in the amount of magnetization before and after the treatment by the reactive plasma of the magnetic recording medium shown in Example 1. Table 1 shows the evaluation results of Examples 1 to 22.

  The manufactured magnetic recording medium was excellent in RW characteristics such as SNR and 3T-squash, and the head flying characteristics were stable. That is, the smoothness of the surface of the magnetic recording medium was high, and the separation characteristics by the nonmagnetic part between the tracks of the magnetic layer were excellent.

(Evaluation of changes over time in electromagnetic conversion characteristics of magnetic recording media)
Changes in the SNR and the coercive force before and after the magnetic recording media manufactured in Example 1 and the comparative example were kept in an oven at 80 ° C. and 80% humidity for 720 hours were examined.
The SNR was evaluated using a read / write analyzer RWA1632 manufactured by GUZIK and a spin stand S1701MP, using a shielded type head for the writing unit and a magnetic head using a GMR element for the reproducing unit, and Sp-p of 160 kFCI, N Is the rms value (root mean square-inches) at 960 kFCI. As a result, the magnetic recording media of Example 1 and Comparative Example 1 were not inferior in both SNR and coercive force before the change with time, but after the change with time, the SNR of the magnetic recording medium of Example 1 was 0. The magnetic recording medium manufactured in Comparative Example 1 had an SNR of 0.4% and a coercive force of 8%.

(Test Example 1)
After the magnetic alloy reacts with ions in the reactive plasma to produce an ionized product of the magnetic alloy, the ion is desorbed from the ionized product of the magnetic alloy, and a method for making the magnetic alloy amorphous is studied. went.
As the magnetic alloy, a Co-based magnetic alloy made of 70Co-5Cr-15Pt-10SiO ₂ was used, and as the ions in the reactive plasma, reactive fluorine ions made of CF ₄ were used. As a result, an amorphous Co-based alloy was formed.

Figure 8 is an X-ray diffraction results of 70Co-5Cr-15Pt-10SiO ₂ and the magnetic alloy, the reaction product of a reactive plasma generated by using CF _4. In FIG. 8, the X-ray diffraction spectrum (a) is the diffraction result of the magnetic film before the reaction with the reactive plasma. In FIG. 8, the large signal near the diffraction angle of 42 degrees is the diffraction peak of the Ru intermediate layer under the magnetic film, and the signal near 43 degrees is the diffraction peak of Co in the magnetic alloy.

The X-ray diffraction spectrum (b) is a result of exposing this magnetic film to a reactive plasma containing fluorine ions for 60 seconds. The treatment conditions were 10 cc / min for CF ₄ and 90 cc / min for O ₂ , the input power for plasma generation was 200 W, the pressure in the apparatus was 0.5 Pa, and the substrate bias was 200 W. In addition, the substrate temperature at the time of a process is about 150 degreeC. Although the peak near 43 degrees disappeared by this reaction, no peak due to cobalt fluoride appears. Moreover, the peak of the Ru intermediate layer near 42 degrees remains as it is. This result showed that the Co-based magnetic alloy lost crystallinity and became amorphous.

Further, the X-ray diffraction spectrum (c) is a case where the magnetic film of the X-ray diffraction spectrum (a) is exposed to a reactive plasma containing fluorine ions. This is a case where processing is performed using only CF ₄ without applying a bias and without adding oxygen to the processing gas. In this case, the peak near 43 degrees disappeared, and the peak of the Ru intermediate layer near 42 degrees remained as it was, but peaks attributed to cobalt fluoride appeared at around 35 degrees, 41 degrees, and 44 degrees.

It is a figure which shows the cross-section of the magnetic recording medium of this invention. It is a figure explaining the structure of the magnetic recording / reproducing apparatus of this invention. It is a longitudinal cross-sectional view which shows an example of the film-forming apparatus used with the formation method of the magnetic layer of this invention. FIG. 4 is a schematic right side view of the film forming apparatus shown in FIG. 3. It is a side view which shows an example of the gas inflow tube with which the film-forming apparatus shown in FIG. 3 is provided. It is a schematic diagram which shows the manufacturing method of the magnetic recording medium of this invention. 2 shows a change in the amount of magnetization before and after the treatment by the reactive plasma of the magnetic recording medium shown in Example 1. It is a figure which shows the X-ray-diffraction result before and behind processing the magnetic layer with the reactive plasma. Diffraction spectral line a is a signal before processing with reactive plasma, and diffraction spectral line b and diffraction spectral line c are signals after processing with reactive plasma. For the diffraction spectral line b, a bias voltage was applied to the substrate during processing, and oxygen was added to the plasma.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Nonmagnetic board | substrate, 2 ... Soft magnetic layer and intermediate | middle layer, 3 ... Magnetic layer, 4 ... Demagnetization layer, 5 ... Protective layer, 7 ... Magnetic recording layer, 11 ... Medium drive part, 27 ... Magnetic head, 28 DESCRIPTION OF SYMBOLS ... Head drive part, 29 ... Recording / reproducing signal system, 30 ... Magnetic recording medium, 100 ... Film-forming apparatus, 101 ... Reaction container, 101a ... Reaction space, 102 ... Gas supply means, 103 ... First exhaust means (upper part) (Exhaust means), 104 ... second exhaust means (lower exhaust means), 105 ... substrate transfer device, 106-109 ... side walls, 111 ... first exhaust port, 112 ... second exhaust port, 113 ... first 113a ... electrode surface, 115 ... third cathode, 115a ... electrode surface, 116 ... window portion, 121-124 ... first to fourth gas inflow pipes, 125 ... straight pipe portion, 126 ... annular portion, 126a ... gas discharge port, 126c ... inner peripheral wall, 127, 1 8, 129 ... Vacuum pump, 134 ... First exhaust pipe, 135 ... Second exhaust pipe, 136 ... Substrate loading chamber, 137 ... Carrier transfer device, 138 ... First carrier, 140 ... Carrier holding part, 141 ... Moving operation mechanism, 150 ... magnet, 200 ... substrate to be processed (substrate), 200a ... central part, 200b ... outer peripheral part, 300 ... magnetic recording / reproducing apparatus.

Claims (18)

A substrate having a magnetic layer formed by the substrate transfer device is carried into a reaction vessel having gas exhaust means at the upper and lower portions and a substrate transfer device at the lower side, and placed inside the reaction vessel. After placing the substrate between a pair of plasma generating electrode units
A gas containing halogen is supplied, and the surface of the magnetic layer is partially exposed to the reactive ion containing the generated halogen ions or the reactive ions generated in the reactive plasma, so that the magnetic layer at the location is exposed. A method of manufacturing a magnetic recording medium having a modifying step of forming a magnetically separated magnetic recording pattern by modifying,
A method of manufacturing a magnetic recording medium, characterized in that, in the modifying step, exhaust gas generated after partially modifying the magnetic layer is exhausted from the upper gas exhausting means.   An annular gas inflow pipe having a plurality of gas discharge ports provided along an inner peripheral wall is disposed between the substrate and the electrode surface, and the gas containing halogen is discharged from the plurality of gas discharge ports. The magnetic recording medium manufacturing method according to claim 1, wherein the magnetic recording medium is supplied so as to flow from an outer peripheral portion to a central portion of the substrate. The halogen ion is a halogen ion formed by introducing one or more halogenated gases selected from the group consisting of CF ₄ , SF ₆ , CHF ₃ , CCl ₄ , and KBr into reactive plasma. The method for manufacturing a magnetic recording medium according to claim 1 or 2, wherein:   The method for manufacturing a magnetic recording medium according to claim 1, wherein the halogen ions are F ions. The locations in the magnetic layer was exposed to the halogen ion, magnetic recording recording according to any one of claims 1 to 4, wherein the halide-free materials constituting the magnetic layer substantially A method for producing a medium.   After forming a resist pattern on the surface of the magnetic layer, the magnetic properties of the magnetically separated magnetic recording pattern are modified by modifying the magnetic properties of the portion by exposing the portion not covered with the resist pattern to the reactive plasma. The method of manufacturing a magnetic recording medium according to claim 1, wherein the magnetic recording medium is formed.   The method of manufacturing a magnetic recording medium according to claim 1, wherein the magnetization amount of the magnetic layer modified by being exposed to the reactive plasma is set to 75% or less of the initial value.   The method of manufacturing a magnetic recording medium according to claim 1, wherein the magnetization amount of the magnetic layer modified by being exposed to the reactive plasma is set to 50% or less of the initial value.   The method for manufacturing a magnetic recording medium according to claim 1, wherein the reactive plasma contains oxygen ions generated by introducing oxygen gas.   2. The modification step includes the step of exposing the magnetic layer to the reactive plasma containing halogen after the magnetic layer is exposed to the reactive plasma containing oxygen. The manufacturing method of the magnetic recording medium of any one of -9.   The method of manufacturing a magnetic recording medium according to claim 1, wherein ion implantation is partially performed on a surface of the magnetic layer.   The method for manufacturing a magnetic recording medium according to claim 1, wherein the ions implanted by the ion implantation are argon or nitrogen.   The method of manufacturing a magnetic recording medium according to claim 1, wherein a resist pattern is formed on the protective layer after forming a protective layer on the magnetic layer.   The method of manufacturing a magnetic recording medium according to claim 1, wherein the magnetic recording pattern is a perpendicular magnetic recording pattern.   The method for manufacturing a magnetic recording medium according to claim 1, wherein any one of the gas exhaust means includes a turbo molecular pump.   The method of manufacturing a magnetic recording medium according to claim 1, wherein any one of the gas exhaust units includes a cryopump. A reaction vessel, and gas exhaust means respectively provided at the upper and lower portions of the reaction vessel;
A substrate transport device provided on the lower side of the reaction vessel and allowing a substrate to be taken in and out; a pair of plasma generating electrode units disposed so that the electrode surfaces face the inside of the reaction vessel;
When the substrate is disposed between the electrode surfaces such that both surfaces thereof face the electrode surface, a plurality of inner walls are provided between the substrate and the electrode surface along a circumference. A gas discharge port having a pair of annular gas inflow pipes arranged so as to be able to supply a gas containing halogen from the peripheral side to the center side of the substrate, and during a reforming reaction by reactive plasma Alternatively, the film forming apparatus is characterized in that the exhaust gas after the reforming reaction can be discharged mainly by an upper gas exhaust means. A gas containing halogen is freely supplied between the substrate and the electrode surface by the gas inflow tube, and any of oxygen radicals, oxygen ions, or oxygen atoms is provided between the substrate and the electrode surface. The film-forming apparatus according to claim 17 , wherein a reactive plasma containing the above is generated.

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