JP5169405B2 - Lighting device - Google Patents

Description

  The present invention relates to a lighting device.

There has been proposed an illumination device having a configuration in which a semiconductor light emitting element such as a light emitting diode is used as a light source, and the wavelength of light emitted from the semiconductor light emitting element is converted by a phosphor and emitted to the outside. For example, Patent Document 1 discloses illumination in which a blue LED chip is used as a light source and a light emitting region of a sealing member is filled with a yellow phosphor such as YAG at a high density, so that white light is emitted to the outside. An apparatus is disclosed.
As documents disclosing the technology related to the present invention, refer to Patent Document 2, Patent Document 3 , and Patent Document 4 .

JP 2007-059378 A JP 2005-353649 A Utility Model Registration No. 3129236 Utility Model Registration No. 3129236

Higher light output is required for recent lighting devices. However, the lighting device described in Patent Document 1 has a problem in terms of durability because high output is hindered for the following reasons.
One reason is that when an LED chip that emits short-wavelength light is covered with a resin-made sealing member, the sealing member itself is yellowed by the short-wavelength light from the LED chip, causing a decrease in output and durability. Become. The reason why the resin sealing member is employed here is that the phosphor can be dispersed in the sealing member and the handling thereof is easy.
As another reason, when phosphors are arranged at a high density on the light emitting side of the LED chip, the phosphor particles themselves may block light and reduce the light extraction efficiency to the outside. This becomes more problematic as the phosphor is brought closer to the LED chip. In particular, when the output of the LED chip is increased, the influence of light shielding by the phosphor itself is increased.

As a result of intensive studies to solve the above problems, the present inventors have arrived at the present invention having the following configuration. That is,
A first reflector having a phosphor layer formed on the reflecting surface;
A semiconductor light emitting element that irradiates light to the first reflector, and
The light from the semiconductor light emitting element is reflected by the reflecting surface of the first reflecting plate and wavelength-converted by the phosphor layer.

According to the illumination device configured as described above, since the phosphor layer is formed at a position away from the semiconductor light emitting element, the phosphor does not reach a high temperature and the quantum effect of the phosphor does not deteriorate. Further, since the density of the phosphor particles can be reduced, the light from the semiconductor light emitting element and the light emitted from the phosphor are not shielded by the phosphor particles. Therefore, high light extraction efficiency can be ensured.
Further, since it is not necessary to fill the phosphor in the vicinity of the light emitting side of the semiconductor light emitting element, the semiconductor light emitting element can be installed without a sealing material. Moreover, it can also coat | cover with a glass material. Since the glass material is stable to short wavelength light and does not turn yellow, a high output can be stably secured for a long period of time as a lighting device.

The second aspect of the present invention is defined as follows. That is,
In the illumination device according to the first aspect, the first reflecting plate faces an optical axis direction of the illumination device,
A second reflector facing the first reflector is further provided;
The semiconductor light emitting element is disposed opposite to the second reflecting plate,
The light emitted from the semiconductor light emitting element is reflected by the second reflecting plate toward the first reflecting plate, further reflected by the first reflecting plate in the optical axis direction, and the first reflecting plate. The illuminating device according to claim 1, wherein wavelength conversion is performed by a phosphor layer formed on the reflector.
According to the illumination device of the first aspect defined as described above, a distance can be secured between the semiconductor light emitting element and the phosphor layer of the first reflector by providing the second reflector. In addition, the semiconductor light emitting element and the first reflector can be integrated as a compact configuration.

The third aspect of the present invention is defined as follows. That is,
In the illumination device according to the second aspect, a central portion of the first reflecting plate is formed of a base member made of a material having high thermal conductivity, and the semiconductor light emitting element is mounted on the base member.
According to the illumination device of the third aspect defined as described above, since the semiconductor light emitting element is mounted on the base member having high thermal conductivity, even if the output of the semiconductor light emitting element is increased, heat is sufficiently drawn from now on. Can do. Therefore, a high output semiconductor light emitting device can emit light stably.
In addition, since the base member and the first reflecting plate are integrated, the heat generated from the semiconductor light emitting device is transferred from the base member to the first reflecting plate. As a result, the base member and the first reflecting plate are transmitted. It will be radiated from the whole to the air. Therefore, the heat dissipation is very good, and a high output and highly reliable lighting device can be realized. In particular, by disposing the base member in the central portion of the first reflecting plate, it is possible to prevent the heat radiation from the base member and the first reflecting plate from being unevenly distributed, and the heat radiation efficiency becomes the best.
As a result of improving the heat dissipation efficiency, it becomes possible to lower the phosphor temperature of the phosphor layer formed on the first reflecting plate, whereby the phosphor can efficiently exhibit a fluorescent action. In addition, since the phosphor layer formed on the first reflecting plate can reduce the particle density of the phosphor, a high-output lighting device with high light extraction efficiency can be realized.

The fourth aspect of the present invention is defined as follows. That is,
In the illumination device of the third aspect, the second reflecting plate is erected from the base member.
Since the second reflecting plate is opposed to the first reflecting plate, the first reflecting plate is shielded at a portion where the second reflecting plate is opposed and does not function as a reflecting surface. Therefore, the effective reflection surface of the first reflecting plate is made as wide as possible by using the portion facing the second reflecting plate as a base member and raising the second reflecting plate from the base member. Can do.

The fifth aspect of the present invention is defined as follows. That is,
In the illumination device according to a fourth aspect, the semiconductor light emitting element is disposed between the base member and the second reflecting plate.
According to the illumination device of the fourth aspect defined as described above, the semiconductor light emitting element is sandwiched between the second reflecting plate and the base member. Thereby, it becomes easy to prevent light emitted from the semiconductor light emitting element from leaking directly to the outside. Since short-wavelength light has high energy, it is preferable to reliably prevent external leakage.

The sixth aspect of the present invention is defined as follows. That is,
In the illumination device according to the first to fifth aspects, a first phosphor layer and a second phosphor layer are formed on the first reflector, and the first phosphor is turned on when the semiconductor light emitting element is turned on. The layer and the second phosphor layer fluoresce in different colors.
Here, even when the first and second phosphor layers are divided and formed on the first reflector, the light emitted from each phosphor layer is mixed and viewed as the first reflector. It is preferable that a desired light emission color is obtained as a whole. For this purpose, the widths of the first phosphor layer and the second phosphor layer are narrowed to promote the mixing of the light emitted from each layer.
In addition, the first phosphor layer and the second phosphor layer are each made of a mixed material of the first phosphor material and the second phosphor material, and the mixing ratio of the two is changed, so that the first phosphor layer and the second phosphor layer are changed. The first phosphor layer and the second phosphor layer may be partitioned. Thereby, the division between the first phosphor layer and the second phosphor layer is in a so-called blurred state, but the mixing of the light emitted from each phosphor is promoted.
The example using two types of phosphor materials has been described above, but it goes without saying that three or more types of phosphor layers can be formed.
Moreover, the shape of each phosphor layer can be designed arbitrarily. For example, characters, figures, symbols, other patterns, etc. can be formed on each phosphor layer.

The seventh aspect of the present invention is defined as follows. That is,
In the illumination device defined in the first to sixth aspects, all of the light emitted from the semiconductor light emitting element and deviated from the second reflecting plate is an optical axis on the first reflecting plate. Reflected in the direction.
According to the illumination device of the sixth aspect defined as described above, all of the light emitted from the semiconductor light emitting element is captured by the first reflector, where the wavelength is changed and reflected to the outside. As a result, luminous efficiency is improved. Further, when the light emitted from the semiconductor light emitting element is short wavelength light having a strong chemical action, leakage of the short wavelength light can be prevented.

The eighth aspect of the present invention is defined as follows. That is,
In the illumination device defined in the first to sixth aspects, the periphery of the first reflector is located on a virtual extension line between the semiconductor light emitting element and the periphery of the second reflector.
According to the lighting device of the eighth aspect defined in this way, all of the light emitted from the semiconductor light emitting element is captured by the first reflecting plate, and the same operations and effects as in the seventh aspect. Play.

The ninth aspect of the present invention is defined as follows. That is,
In the illumination device defined in the first aspect, the semiconductor light emitting element is disposed separately from the first reflector, and is emitted from the semiconductor light emitter toward the first reflector. The axis of the light to be reflected and the axis of the light reflected by the first reflecting plate are in different directions.
According to the illumination device of the ninth aspect defined as described above, the same operation as that of the illumination device defined in the first aspect is obtained, and the semiconductor light emitting element and the first reflector are separated. Therefore, the design freedom of the lighting device is improved.

The tenth aspect of the present invention is defined as follows. That is,
In the illumination device defined in the ninth aspect, the first reflecting plate is a concave mirror, and the light of the semiconductor light emitting element is irradiated only to the first reflecting plate through a lens portion.
According to the illuminating device of the tenth aspect defined in this way, all the light from the semiconductor light emitting element is irradiated to the first reflector and reflected or wavelength-converted, so that the light from the semiconductor light emitting element is reflected. Utilization efficiency is maximized. In addition, the influence of the light from the semiconductor light emitting element on the outside can be prevented.

The eleventh aspect of the present invention is defined as follows. That is,
In the illumination device defined in the tenth aspect, the concave mirror is disposed continuously or intermittently around the semiconductor light emitting element.
The illuminating device thus defined has a configuration in which the concave mirror-shaped first reflecting plate is arranged around the semiconductor light emitting element, and is therefore suitable for a wide range of illumination.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a side view of a lighting device 1 according to an embodiment, and FIG. 2 is a cross-sectional view taken along the line II-II in FIG.
The illumination device 1 includes a short-wavelength LED chip 3, an umbrella 10, and a reflection block 20.
The kind of LED chip 3 as a semiconductor light emitting element is not particularly limited, and an arbitrary configuration can be adopted. For example, an LED chip including a group III nitride compound semiconductor layer can be used. Group III nitride compound semiconductor is represented by the general formula _{Al X Ga Y In 1-X} -Y N (0 ≦ X ≦ 1,0 ≦ Y ≦ 1,0 ≦ X + Y ≦ 1), AlN, GaN and It includes a so-called binary system of InN, a so-called ternary system of Al _x Ga _1-x N, Al _x In _1-x N, and Ga _x In _1-x N (where 0 <x <1). At least a part of the group III element may be substituted with boron (B), thallium (Tl), etc., and at least a part of the nitrogen (N) is also phosphorus (P), arsenic (As), antimony (Sb) , Bismuth (Bi) or the like. The element functional part of the LED is preferably composed of the binary or ternary group III nitride compound semiconductor.
The group III nitride compound semiconductor may contain an arbitrary dopant. As the n-type impurity, silicon (Si), germanium (Ge), selenium (Se), tellurium (Te), carbon (C), or the like can be used. As the p-type impurity, magnesium (Mg), zinc (Zn), beryllium (Be), calcium (Ca), strontium (Sr), barium (Ba), or the like can be used. Although the group III nitride compound semiconductor can be exposed to electron beam irradiation, plasma irradiation or furnace heating after doping with p-type impurities, it is not essential.
Group III nitride compound semiconductors include metalorganic vapor phase epitaxy (MOCVD), well-known molecular beam crystal growth (MBE), halide vapor phase epitaxy (HVPE), sputtering, ion plating. It can also be formed by a ting method or the like.
The material of the substrate on which the group III nitride compound semiconductor layer is grown is not particularly limited as long as the group III nitride compound semiconductor layer can be grown. For example, sapphire, gallium nitride, spinel, silicon, silicon carbide, Examples of the substrate material include zinc oxide, gallium phosphide, gallium arsenide, magnesium oxide, manganese oxide, and a group III nitride compound semiconductor single crystal. Among these, it is preferable to use a sapphire substrate.

The emission color of the LED chip 3 is appropriately selected according to the purpose. For example, it is selected according to a desired emission color such as short wavelength light having an emission wavelength of 400 nm or less, blue, green, and the like. In the case of configuring an illumination device that emits white light, an LED chip 3 that emits short-wavelength light or blue light can be suitably used.
A plurality of LED chips 3 can also be used. In that case, it is possible to combine a plurality of different types of LED chips as well as a combination of the same types of LED chips.

The LED chip 3 is installed in a bare chip state without a molding material. At this time, it is preferable to provide a fine uneven shape on the LED chip surface in order to improve the light extraction efficiency from the inside of the chip. In order to improve the light extraction efficiency, an optical design such as a dielectric multilayer film or a photonic crystal structure may be applied to the chip surface. Alternatively, the LED chip 3 can be molded with an optically stable glass material. It is preferable to provide fine irregularities on the surface of the glass material. Thereby, the light extraction efficiency from the glass material to the air can be improved. Further, the light from the LED chip 3 can be dispersed, and the light from the LED chip 3 can be spread over the entire area of the reflection block 20 and the reflection surface 15 of the umbrella 10.
Since there is no mold material for LED chips, or because the mold material is glass, the light output of the light-emitting device does not deteriorate over time due to coloring due to deterioration of the mold material, which has been a problem in the past. it can. Also, when a resin layer in which a phosphor is dispersed is coated on the reflection surface, the light is dispersed throughout the reflection surface, so that the light intensity is small and the resin hardly deteriorates. In this case, it is preferable to use a silicone resin having high light resistance and high heat resistance as the sealing resin.

An umbrella 10 as a first reflecting plate includes a disk-shaped base member 11 and a reflecting member 14 that is continuous with the outer periphery of the base member 11.
The base member 11 is preferably formed using a steel material or other metal plate. This is because by using a metal material having a high thermal conductivity, the heat generated by the light emission of the LED chip 3 mounted on the base member 11 is released to the outside, and a high output is secured to the LED chip 3. A power supply circuit and a control circuit for driving the LED chip 3 can also be disposed on the base member.

The reflecting member 14 has a shape obtained by partially cutting the outer peripheral surface of a sphere. As shown in FIG. 3A, a synthetic resin material is used as a substrate 121 and a metal reflecting layer 123 is laminated on the lower surface thereof. When a white substrate or a metal substrate is used, the substrate itself (that is, without forming any metal reflection layer) can be used as a reflection surface.
The shapes of the reflecting member 14 and the base member 11, that is, the shape of the umbrella 10 can be arbitrarily designed according to the purpose and application of the lighting device. Further, the substrate of the base member 11 can be integrated as the substrate of the reflecting member 14. The base member 11 and the reflecting member 14 can be separated.

As shown in FIG. 3, a phosphor layer is applied in a stripe pattern on the reflecting surface 15 of the reflecting member 14. The B layer receives short wavelength light from the LED chip 3 and fluoresces blue, the Y layer similarly receives short wavelength light from the LED chip 3 and fluoresces yellow, and the R layer short wavelength light from the LED chip 3. And fluorescent red. Therefore, when the LED chip 3 is turned on, the colors of the respective phosphor layers can be visually recognized by viewing the reflecting surface 15. By reducing the width of each phosphor layer, the light emitted from each phosphor layer is mixed, and the illumination device 1 as a whole emits white light. Although the width | variety of each fluorescent substance layer can be set arbitrarily, in the case of the lighting fixture attached to a general household ceiling, it is preferable to set to about 1-50 mm. If the width is too large, the irradiated object is illuminated with a specific fluorescent color, which is not preferable. In short, it can be arbitrarily set so that the light emitted from each phosphor layer is uniformly mixed according to the distance between the illumination device and the irradiated object.
When the LED chip 3 is off, that is, under the natural light, each semiconductor layer is white, and the reflecting surface 15 is also white as a whole.
Of course, the fluorescent material of each phosphor layer (B layer, Y layer and R layer) may be mixed uniformly. In that case, the reflective layer 15 is white regardless of whether the LED chip 3 is on or off.
In this embodiment, in order to reduce the use of the fluorescent material, the fluorescent material is not laminated on the portion 16 that becomes the shadow of the support column 22.

Examples of blue phosphors forming the B layer include (Ba, Sr) MgAl ₁₀ O ₁₇ ; Eu ²⁺ , (Ba, Sr, Ca) ₁₀ (PO ₄ ) ₆ Cl ₃ ; Eu ²⁺ , silicate phosphors, and the like. be able to.
Further, as the yellow phosphor forming the Y layer, a phosphor represented by the general formula (Ba, Sr, Ca) ₂ SiO ₄ : Eu ²⁺ can be suitably used. Such a phosphor efficiently converts short-wavelength light into yellow or yellow-green light. In the case of using a blue light emitting element LED chip, the general formula _{Y 3-x Gd x Al 5} -y Ga y O 12: yttrium represented by Ce (0 ≦ x ≦ 3,0 ≦ y ≦ 5) An aluminum / garnet phosphor can be preferably used. In the above general formula, yttrium (Y) partially or wholly substituted with Lu or La can be used, and aluminum (Al) partially or entirely replaced with In or Sc. You can also.
As the yellow phosphor, (Ca _0.49 Mg _0.50 ) ₃ (Sc _0.75 Y _0.25 ) ₂ Si ₃ O _12.015 : Ce ³⁺ , (Ca _0.99 ) ₃ Sc ₂ Si ₃ O _12.015 : Ce ³⁺ , (Ca _0.49 Mg _0.50 ) ₃ (Sc _0.50 Y _0.50 ) ₂ Si ₃ O _12.015 : Ce ³⁺ , (Ca _0.49 Mg _0.50 ) _{3 (Sc 0.50 Lu 0.50) 2 Si} 3 O 12.015: Ce 3+, Ba 2 SiO 4: Eu 2+ ( orthosilicates) or the like can also be used.

Examples of red phosphors forming the R layer include Y ₂ O ₃ : Eu, Y ₂ O ₂ S: Eu, (Y, La) O ₃ : Eu, (Ca, Sr) S: Eu, and Y ₂ Al. ₅ O ₁₂ : Eu, Y ₃ (Al, Ga) ₅ O ₁₂ : Eu, SrY ₂ S ₄ : Eu, Y ₂ O ₂ S: Eu, Bi, YVO ₄ : Eu, Bi, SrS: Eu, CaLa ₂ S ₄ : Ce or the like can be employed.
Other examples of the green phosphor include (Y, Ce) ₃ (Al, Ga) ₅ O ₁₂ : Tb, BaMgAl ₁₀ O ₁₇ : Eu, Ba ₂ MgSi ₂ O ₇ : Eu, (Sr, Ca, Ba). _{(Al, Ga) 2 S 4} : Eu, BaSiO 4: Eu, YBO 3: Ce, Tb, (Ca, Sr) p / 2 Si 12-p-q Al p + q O 1-q N: Ce, Ca 8 Mg (SiO ₄ ) ₄ Cl ₂ : Eu, SrAl ₂ O ₄ : Eu, SrAl ₁₄ O ₂₅ : Eu, (Ca _0.99 ) ₃ Sc ₂ Si ₃ O _12.015 : Ce ³⁺ , (Ca _0.49 Zn _{0 .50) 3 Sc 2 Si 3 O} 12.015: can be employed ^{Ce 3+} and the like.
The above shows examples of phosphors that are preferable for short-wavelength light or blue light sources, but the phosphor is appropriately selected according to the emission color (emission wavelength) of the LED chip.
A photocatalytic layer that is excited by light from the LED chip may be formed on the surface of the reflecting surface 15. By forming the photocatalyst layer in this way, active holes are generated on the surface of the photocatalyst layer upon receiving light from the LED chip, so that the surface of the reflecting surface 15 can be prevented from being contaminated. Moreover, since the odor component in air can also be decomposed | disassembled, it becomes possible to have the function of an air cleaner. _{TiO 2, TiO 2-X N} X and the like as such photocatalyst.

The reflection block 20 as the second reflection plate is connected to the base member 11 of the umbrella 10 by a support column 22. By standing up with respect to the base member 11, the area of the reflective surface 15 can be made as wide as possible.
A step is formed on the upper surface (the LED chip facing surface) of the reflection block 20. Thereby, the light from the LED chip 3 is evenly distributed to the reflecting surface 15 of the umbrella 10. The upper surface shape of the reflection block 20 may be a curved surface shape. The shape of the upper surface of the reflection block 20 is designed so that the light from the LED chip can be evenly distributed to the reflection surface 15.
The reflection block 20 is formed by vapor-depositing an aluminum layer on the surface of the resin base portion. It is also possible to configure the reflection block 20 with an aluminum block.

According to the illuminating device 1 configured as described above, when the LED chip 3 is turned on, short-wavelength light is emitted from the LED chip 3. The emitted light is reflected by the reflection block 20 and reaches the reflection surface 15 of the umbrella 10. At this time, it is preferable that all of the light emitted from the LED chip 3 is reflected by the reflection block 20 so that the direct light does not leak outside.
The short wavelength light reaching the reflecting surface 15 causes each phosphor layer to emit light in a unique color. Thereby, as shown in FIG. 3, it becomes visible in a state where each phosphor layer is partitioned.

4 and 5 show a lighting device 101 according to another embodiment. In addition, the same code | symbol is attached | subjected to the member same as the member demonstrated in previous embodiment, and the description is abbreviate | omitted.
In this lighting device 101, the reflection block 120 is connected from the center of the base member 11 (that is, the center of the umbrella 10) by a single support 122, and the LED chips 103 are arranged at equal intervals around the support 122. Yes.
According to the illuminating device 101 having such a configuration, the number of support columns is reduced as compared with the configuration of FIG. 1, and as a result, the light from the LED chips 3 can be evenly supplied to the entire reflection surface 15. As a result, it is possible to eliminate light unevenness on the reflecting surface 15.

  In the example of FIG. 6, a solid portion of the reflecting surface 15 is formed by uniformly mixing the phosphor materials constituting the B layer, the Y layer, and the R layer (see FIG. 3), and the character (TG) portion. Increases the mixing ratio of the phosphor materials constituting the R layer. As a result, when the LED chip 3 is on, the letters TG are slightly raised on the reflecting surface 15 to express a unique design.

FIG. 7 is a cross-sectional view showing a configuration of a lighting device 201 according to another embodiment, and FIG. 8 is a view of the lighting device 201 as seen from the optical axis direction (from the bottom in the figure).
In the figure, reference numeral 203 denotes an LED chip, reference numeral 210 denotes an umbrella as a first reflecting plate, and reference numeral 220 denotes a reflecting block as a second reflecting plate. In this embodiment, the umbrella 210 and the reflection block 220 are circular members when viewed from the optical axis direction.
The LED chip 203 is a short wavelength LED as in the previous embodiment, and is mounted on the base member 211. A phosphor layer corresponding to the short wavelength LED is formed on the reflecting surface 215 of the reflecting member 214 of the umbrella 210.
The reflection block 220 is connected to the center of the base member 211 by a column 222 extending from the center thereof.
The LED chips 203 are arranged at equal intervals around the column 222. As a result, the centers of the umbrella 210, the reflection block 220, and the LED chip array coincide with each other.

In this embodiment, the periphery of the umbrella 210 is located on a virtual extension line between the LED chip 203 and the periphery of the reflection block 220. As a result, all of the light emitted from the LED chip 203 and deviating from the reflection block 220 is captured by the reflection surface 215 of the umbrella 210 and reflected in the optical axis direction. The umbrella 210 may be extended further outside by intersecting a virtual extension line between the LED chip 203 and the periphery of the reflection block 220.
In the light emitted from the LED chip 203, the light reflected by the reflection block 220 goes to the reflection surface 215 of the umbrella 210 and is reflected again by the reflection surface 215.
According to the reflection device 201 configured as described above, all of the short wavelength light emitted from the LED chip 203 reaches the reflection surface 215 and is wavelength-converted by the phosphor layer. Therefore, leakage of short wavelength light can be reliably prevented, and luminous efficiency is improved.
For example, when the lighting device 201 is designed as follows,
(1) LED chip 203
Number: 6 pieces, input current: 700 mA, input power: 3 W / LED chip (2) umbrella 210
Outer diameter dimension (diameter): 100 mm, outer diameter dimension (diameter) of the base member 211: 14.286 mm, area of the reflective surface 15: 7213 mm ²
The luminous efficiency is 70 lm / W, and the amount of light is 1260 lm.
In this embodiment, since the phosphor is widely dispersed on the reflection surface 215, the particle density of the phosphor is very small, and light shielding by the phosphor itself is almost negligible. Therefore, the light from the LED chip is efficiently wavelength-converted and extracted outside.
According to the study by the present inventors, the light extraction efficiency of the illumination device of the above specifications is about 1.4 times that of the illumination device using the conventional type light source that concentrates the phosphor around the LED chip. Become.

FIG. 9 is a cross-sectional view showing a configuration of an illumination device 301 according to another embodiment, and FIG. 10 is a view of the illumination device 301 as seen from the optical axis direction (from the bottom in the figure).
In the figure, reference numeral 303 denotes an LED chip, reference numeral 310 denotes an umbrella as a first reflecting plate, and reference numeral 320 denotes a reflecting block as a second reflecting plate. In this embodiment, the umbrella 310 is a vertically long member, and the reflection block 320 is also a vertically long member correspondingly.
As in the previous embodiment, the LED chip 303 is a short wavelength LED and is mounted on the base member 311. On the reflecting surface 315 of the reflecting member 314 of the umbrella 310, a phosphor layer corresponding to the short wavelength LED is formed.
The reflection block 320 is connected to the center of the base member 311 by a support column 322 located at the center thereof. The support column 322 is also formed as a continuous body along the reflection block 320. It is preferable that the surface of the column 322 is also mirrored to reflect the light from the LED chip 303.
On both sides of the support column 322, the LED chips 303 are arranged at equal intervals along the support column 322.

In this embodiment, the periphery of the umbrella 310 is located on a virtual extension line between the LED chip 303 and the periphery of the reflection block 320. As a result, all of the light emitted from the LED chip 303 and deviating from the reflection block 320 is captured by the reflection surface 315 of the umbrella 310 and reflected in the optical axis direction. The umbrella 310 may be extended further outside by intersecting a virtual extension line between the LED chip 303 and the periphery of the reflection block 320.
The light emitted from the LED chip 303 reflected by the reflection block 320 is directed to the reflection surface 315 of the umbrella 310 and is reflected again by the reflection surface 315.
According to the reflection device 301 configured in this way, all of the short wavelength light emitted from the LED chip 303 reaches the reflection surface 315 and is converted in wavelength by the phosphor layer. Therefore, leakage of short wavelength light can be reliably prevented, and luminous efficiency is improved.

Illumination device 401 of another embodiment is shown in FIG.
The illumination device 401 in FIG. 11 includes an LED light source 403, an umbrella 410, and a stand unit 420.
The LED light source 403 includes an LED chip 404 and a sealing member 405 that seals the LED chip 404, and an upper portion of the sealing member 405 is a lens portion 406 having a convex lens shape. A control circuit for controlling the lighting of the LED light source 403 is provided in the housing portion 408. The light path from the LED light source 403 is controlled by the lens unit 406, and is irradiated only on the reflection surface of the umbrella 410.
The umbrella 410 is a concave mirror, and has a reflecting surface 415 provided with a phosphor layer. The structure of the umbrella 410 is the same as that of the umbrella 10 of the previous embodiment, and the structure shown in FIG. 3 (A) or FIG. 3 (B) can be adopted as the phosphor layer. In addition, as shown in FIG. 6, the distribution of the phosphor can be significantly changed.
The umbrella 410 may have a shape obtained by cutting a part of a sphere, or may have a long shape shown in FIG.

The direction of the axis of light emitted from the LED light source 403 and the axis of light reflected by the umbrella 410 are different. Thereby, the position of the LED light source 403 can be set as the peripheral portion of the irradiation surface of the illumination device 401 or can be removed from the irradiation surface.
The stand part 420 includes a base part 421 and an arm part 423. An LED light source 403 is mounted upward at substantially the center of the upper surface of the base portion 421. The umbrella 410 is disposed at the tip of the arm portion 423 so as to face the LED light source 403. It is preferable that a universal joint is interposed between the tip of the arm portion 423 and the umbrella 410 so that the attachment angle of the umbrella 410 can be arbitrarily changed.
According to the irradiation apparatus 401 configured as described above, the light emitted from the semiconductor light emitting element 404 is collected by the lens unit 406 of the sealing member 405 and irradiated only to the reflection surface 415 of the umbrella 401. The light emitted from the LED light source unit 403 is reflected by the reflecting surface 15 and wavelength-converted by the phosphor layer of the reflecting surface 15. Thereby, desired light is irradiated in the optical axis direction of the umbrella 410.

FIG. 12 shows an illumination device 501 of another embodiment. In addition, the same code | symbol is attached | subjected to the element same as FIG. 11, and the description is abbreviate | omitted.
In this embodiment, the housing portion 408 of the LED light source 403 is fixed to the wall via the retainer 409. The base end portion of the arm portion 523 is also fixed to the wall, and the umbrella 410 is connected to the distal end portion thereof.
In the example of FIG. 13, the retainer 409 and the arm portion 525 are both fixed to the ceiling. Also in FIG. 13, the same elements as those in FIG.

FIG. 14 shows an illumination device 601 according to another embodiment. In addition, the same code | symbol is attached | subjected to the element same as FIG. 11, and the description is abbreviate | omitted.
In the example of FIG. 14, the light source unit 603 is configured by arranging four LED light sources 403 on the peripheral wall of the retainer 609. The optical axes of the LED light sources 403 are orthogonal to each other, and four umbrellas 410 are arranged so that the center portions thereof coincide with the optical axes of the LED light sources 403. The distance from the center of the light source unit 603 to the center of each umbrella 410 is equal.
The number of LED light sources 403 and the number of umbrellas 410 can be arbitrarily selected. For example, six or eight umbrellas 410 can be arranged at equal intervals around the light source unit. The light source unit 603 can be surrounded by the umbrella 410 without a gap.

  The present invention is not limited to the description of the embodiments and examples of the invention described above. Various modifications may be included in the present invention as long as those skilled in the art can easily conceive without departing from the description of the scope of claims.

FIG. 1 is a cross-sectional view showing a configuration of a lighting apparatus according to an embodiment of the present invention. 2 is a cross-sectional view taken along the line II-II in FIG. FIG. 3 shows the configuration of the reflecting member 14. FIG. 4 is a cross-sectional view illustrating a configuration of a lighting device according to another embodiment. FIG. 5 is a cross-sectional view taken along line VV in FIG. FIG. 6 shows a reflecting surface of an umbrella of a lighting apparatus according to another embodiment. FIG. 7 is a cross-sectional view illustrating a configuration of a lighting apparatus according to another embodiment. FIG. 8 is a view of the illumination device of FIG. 7 as seen from the optical axis direction. FIG. 9 is a cross-sectional view illustrating a configuration of a lighting apparatus according to another embodiment. FIG. 10 is a view of the illumination device of FIG. 9 as seen from the optical axis direction. FIG. 11 is a cross-sectional view illustrating a configuration of a lighting apparatus according to another embodiment. FIG. 11 is a cross-sectional view illustrating a configuration of a lighting apparatus according to another embodiment. FIG. 11 is a cross-sectional view illustrating a configuration of a lighting apparatus according to another embodiment. FIG. 11 is a cross-sectional view illustrating a configuration of a lighting apparatus according to another embodiment.

Explanation of symbols

1, 101, 401, 501, 601 Illumination device 3, 103 LED chip 10, 410 Umbrella 11 Base member 15 Reflecting surface 20, 120 Reflecting block 22, 122 Prop

Claims (7)

A first reflector having a phosphor layer formed on the reflecting surface;
A semiconductor light emitting element for irradiating light to the first reflector, a lighting device Ru provided with,
The light from the semiconductor light emitting element is reflected by the reflecting surface of the first reflecting plate and wavelength-converted by the phosphor layer,
The first reflecting plate faces the optical axis direction of the lighting device,
A second reflecting plate facing the first reflecting plate and not having a phosphor layer on the reflecting surface is further provided.
The semiconductor light emitting element is disposed opposite to the second reflecting plate,
The light emitted from the semiconductor light emitting element is reflected by the second reflecting plate toward the first reflecting plate, further reflected by the first reflecting plate in the optical axis direction, and the first reflecting plate. The wavelength is converted by the phosphor layer formed on the reflector,
A central portion of the first reflector is formed of a base member made of a metal material, and the semiconductor light emitting element is mounted on the base member .
The second reflector is erected from the base member ,
The illuminating device characterized in that all of the light emitted from the semiconductor light emitting element and deviated from the second reflecting plate is reflected in the optical axis direction by the first reflecting plate . The lighting device according to claim 1 , wherein the semiconductor light emitting element is disposed between the base member and the second reflecting plate. The lighting device according to claim 1 or 2 wherein the surface of the semiconductor light emitting element side of the second reflector step is formed, it is characterized. The lighting device according to claim 1 or 2 faces of the semiconductor light emitting element side of said second reflector is a curved shape, it is characterized. 2. The plurality of types of phosphor layers are formed on the first reflecting plate, and the plurality of types of phosphor layers fluoresce in different colors when the semiconductor light emitting element is turned on. 4. The illumination device according to any one of 4 . The semiconductor light emitting device is an LED chip that emits short wavelength light or blue light,
6. The illumination device according to claim 5 , wherein the light emitted from the semiconductor light emitting element is emitted as white light by being wavelength-converted and mixed by the plurality of types of phosphor layers. . The peripheral edge of the first reflector, the illumination apparatus according to any one of claims 1 to 6, wherein located on a virtual extension line of the semiconductor light emitting element and the peripheral edge of the second reflector, characterized in that .

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