JP5169125B2 - Electro-optical device, electronic device, and active matrix substrate - Google Patents

Description

  The present invention relates to an electro-optical device such as a liquid crystal display device and an organic EL device, an electronic apparatus, and an active matrix substrate suitable for these devices.

  2. Description of the Related Art Conventionally, an electro-optical device that can display an image by providing electro-optical elements arranged in a matrix is provided. Here, examples of the electro-optic element include a liquid crystal element and an OLED (Organic Light Emitting Diode) element. In such an electro-optical device, scanning lines are provided along the row direction of the matrix array and data lines are provided along the column direction, and a pixel circuit is provided in an intersection region of the scanning lines and the data lines. Each pixel circuit includes a pixel electrode and a TFT (Thin Film Transistor) that determines whether an image signal supplied through a data line is supplied to the electro-optical element.

Such scanning lines, data lines, pixel electrodes, TFTs, and the like are formed by being stacked on a predetermined substrate. At that time, in order to realize a preferable arrangement relationship of these elements from a three-dimensional viewpoint, or to prevent a short circuit between the elements such as between the scanning lines and the data lines, the respective elements are arranged between a plurality of layers. The layers are stacked through an insulating film. In this case, light transmitted through the electro-optical element (light emitted from the electro-optical element if the electro-optical device is an OLED element or the like) is simultaneously transmitted through the interlayer insulating film and emitted to the outside.
As an electro-optical device having such a configuration, for example, a device disclosed in Patent Document 1 is known.
JP 2006-171673 A

  Incidentally, in the above-described electro-optical device, in order to display an image as bright as possible, it is one problem to increase the light transmittance of the interlayer insulating film. However, the structure on the substrate has a structure in which a plurality of interlayer insulating films are stacked in contact with each other due to the necessity of sequentially arranging the scanning lines, data lines, and the like. Therefore, multiple reflection of light occurs at the interface of these interlayer insulating films, and as a result, interference phenomenon or the like occurs, so that it is relatively difficult to achieve a sufficient light transmittance.

  In Patent Document 1, four times the sum of the product of the thickness of the gate insulating film and its refractive index and the sum of the product of the thickness of the protective film and its refractive index coincides with an even multiple of the wavelength of light. (Patent Document 1, [Abstract], [Claim 1], etc.). However, in this Patent Document 1, for example, a “wavelength representative of visible light” ([0053] of Patent Document 1) is assumed as the “wavelength of light”. Since bands are handled in a lump, even if a certain wavelength (for example, the “wavelength that represents visible light”) avoids interference, interference occurs in other wavelengths or wavelength ranges. The risk of incurring is extremely high. If this is taken as a whole, the improvement in transmittance may not be expected in the end.

  The present invention has been made in view of the above-described circumstances, and is an electro-optical device including a laminated structure including a scanning line, a data line, a switching element, and an interlayer film, and has a higher light transmittance. It is an object of the present invention to provide an electro-optical device, an electronic device, and an active matrix substrate each including a stacked structure to be realized.

  In order to solve the above-described problem, an electro-optical device according to an aspect of the invention includes a substrate, a plurality of scanning lines and a plurality of data lines formed on the substrate, and the plurality of scanning lines and the plurality of data lines in plan view. A pixel electrode formed to correspond to a region where a plurality of data lines intersect with each other, and a transition between an ON state and an OFF state by a selection signal supplied through the scanning line, and at the time of the ON state, through the data line A switching element that adjusts a transmission mode or a light emission mode of display light by transmitting a supplied image signal to the pixel electrode, and the scanning line and the data line as viewed along a perpendicular direction standing on the surface of the substrate And an interlayer film formed on the substrate as an upper layer or a lower layer between the pixel electrodes, and the interlayer film has a first color display light of the display light. When the length is λ1, the film thickness db1 is defined as db1 = (λ1 / (2 · n1)) × (integer), where the first type interlayer film (where n1 is the thickness of the film) (Refractive index) and the wavelength of the second color display light different from the first color is λ2, the film thickness db2 is db2 = (λ2 / (2 / n2)) × (integer) A second type of interlayer film (where n2 is the refractive index of the film and n2 ≠ n1 or n2 = n1).

According to the present invention, an extremely high light transmittance can be enjoyed in a laminated structure including a scanning line, a data line, a switching element, and an interlayer film.
In other words, the above-described equation for obtaining db1 has the meaning of an equation for obtaining the film thickness for causing the “resonance” phenomenon relating to the first color in the first type interlayer film. The same applies to db2. Accordingly, the first color display light is emitted without waste from the first type of interlayer film, and the second color display light is also emitted without waste from the second type of interlayer film. The significance of the above-described “resonance” will be described again during the description of the embodiment.
As described above, in the present invention, since the first and second interlayer films having the film thicknesses db1 and db2 suitably corresponding to the first color and the second color, respectively, are provided. The light transmittance is extremely high.
In the above description, “n2” defines parentheses, that is, “n2 ≠ n1 and n2 = n1” has the following significance. That is, first, the case of “n2 ≠ n1” means that each of the first-type and second-type interlayer films has a different refractive index. It is implied that the film is made of a material.
On the other hand, the latter “n2 = n1” means that each of the first-type and second-type interlayer films has the same refractive index. Typically, for example, each of the first-type and second-type interlayer films is made of the same kind of material. It is implied that the film is composed of a film (ultimately both films made of the same material). In this latter case, in order to cope with display lights having different wavelengths λ1 and λ2, if the value of (integer) in each of the above formulas is the same, the respective films of the first type and the second type of interlayer film The thicknesses db1 and db2 are naturally different.

In the electro-optical device according to the aspect of the invention, the λ1 is set to a wavelength at the center of the wavelength band that can be visually recognized as the first color, and the λ2 is a wavelength at the center of the wavelength band that can be visually recognized as the second color. You may comprise so that it may be prescribed | regulated.
According to this aspect, since λ1 and λ2 are set by one of the most appropriate methods for representing the first color and the second color, the db1 and db2 are also preferably obtained. Therefore, the above-described effect is more effectively achieved.

In the electro-optical device according to the aspect of the invention, the first type of interlayer film may be replaced by db1 as do1 = (λ1 / (2 · n1)) × (integer) ± (λ1 / (8 · n1)). The second-type interlayer film has a required film thickness of do1, and in place of db2, do2 = (λ2 / (2 · n2)) × (integer) ± (λ2 / (8 · n2)) , And may be configured to have a film thickness of do2.
According to this aspect, do1 and do2 obtained by adding an allowable limit ± (λ1 / (8 · n1)) to the above-described db1 and db2 are the film thicknesses of the first-type and second-type interlayer films. . Accordingly, in this aspect, for example, the film thickness for causing the above-described resonance phenomenon can be suitably set while eliminating the influence of inevitable errors that occur in manufacturing the electro-optical device.
Moreover, according to this aspect, the following effects can also be achieved.
That is, the above-described concept of setting “the wavelength at the center of the wavelength band” is one of the most preferable methods for selecting the wavelengths λ1 and λ2 representing the first color and the second color. It is difficult to abandon the aspect of only one assumption. That is, in practice or potentially, the wavelengths λ1 and λ2 can be set by a concept different from the above concept, or can take a value having a certain range.
In this way, if there are suitable values that can be approved as the values λ1 and λ2, with a certain range, the db1 and db2 also have a suitable value that can be accepted as a certain range. It will be.
And according to this aspect which provides the above-mentioned permissible limit, the film thickness of the 1st type and 2nd type interlayer film can be suitably set up, taking in such an indefiniteness.

In the electro-optical device according to the aspect of the invention, at least one of the first type and the second type of interlayer film may include a plurality of adjacent interlayer films among the interlayer films.
According to this aspect, the degree of freedom is relatively high in the design for securing the first-type or second-type interlayer film having the film thickness db1 or db2, or db1 or do2. In addition, the “interlayer film” in the present invention is not limited to the “resonance” phenomenon function noted in the present invention, but is required to have a more essential function such as an insulating function between wirings. In consideration of this, the configuration in which the first or second type of interlayer film includes “a plurality of interlayer films” as in this embodiment is advantageous. This is because the “resonance” phenomenon function can be realized by the entire “multiple interlayer films” while it is possible to realize insulation between the elements such as the data lines between the “multiple interlayer films”. It is possible to do so. This also contributes to thinning of the entire apparatus.
Such an effect can be grasped more clearly by assuming that the first type or the second type of interlayer film is supposed to be composed of only one interlayer film. .
In the case of this aspect, each of the “plurality of interlayer films” need not have the same refractive index “n1” or “n2” in the strict sense. For example, if the second type of interlayer film is composed of the first, second, and third interlayer films, these refractive indexes n21, n22, and n23 satisfy n21 ≠ n22, n22 ≠ n23, and n21 ≠ n23. Good. In this case, the refractive index “n2” can be set, for example, as (n21 + n22 + n23) / 3.
However, if the difference between them is too large, light reflection will occur between the plurality of interlayer films, and the concept of “first type interlayer film” or “second type interlayer film” is planned. In this case, there is a problem in setting the refractive index “n1” or “n2”, which is one value, or the reliability thereof. Therefore, according to the above example, n21, n22, and n23 may be different from each other, but it is necessary that n21≈n22≈n23. In view of the above matters, the allowable range is a temporary standard when no severe reflection occurs between the plurality of interlayer films.

In this aspect, the switching element includes a thin film transistor, the scanning line is formed immediately above a gate insulating film constituting the thin film transistor, and a first insulating film is formed immediately above the scanning line. And a semiconductor layer constituting the thin film transistor is formed immediately below the gate insulating film, a second insulating film is formed immediately below the semiconductor layer, and the first type In addition, at least one of the second-type interlayer films may include the gate insulating film, the first insulating film, and the second insulating film.
According to this aspect, the first-type or second-type interlayer film includes the first insulating film and the second insulating film adjacent to the upper and lower sides in addition to the gate insulating film. This provides one of the most preferred embodiments of the first-type or second-type interlayer film including the aforementioned “plurality of interlayer films”.

In the electro-optical device according to the aspect of the invention, at least one of the first type and the second type of interlayer films includes a plurality of spaced apart interlayer films that are not adjacent to each other among the interlayer films. The film thickness may be configured to match the film thickness of each of the plurality of interlayer films.
According to this aspect, the first-type or second-type interlayer film (hereinafter referred to in this description is limited to the case of “first-type” for ease of explanation) by a plurality of interlayer films that are not adjacent to each other. Is configured. The thickness of the first type of interlayer film matches the thickness of each of the plurality of interlayer films. This means that each layer of the plurality of interlayer films has the relevance of “first type interlayer film”. In other words, when each of the plurality of interlayer films has film thicknesses t1, t2,..., Tn, each of these t1, t2,..., Tn coincides with, for example, db1 (t1 = db1, t2). = Db1,..., Tn = db1).
According to such an aspect, since the resonance phenomenon occurs in each of the plurality of interlayer films, the above-described effect is more effectively achieved.

In the electro-optical device according to the aspect of the invention, the first type of interlayer film may mainly include SiN, and the second type of interlayer film may mainly include SiO ₂ .
According to this, since these SiN and SiO ₂ are suitable as insulating materials, a suitable interlayer insulating film can be provided, and since there is a difference in refractive index between the two, the first type and the second type The type or distinction of the interlayer film can be suitably set.

  In order to solve the above problem, an electro-optical device according to another aspect of the invention includes a substrate, a plurality of scanning lines and a plurality of data lines formed on the substrate, and a plan view of the substrate. The pixel electrode formed so as to correspond to a region where the plurality of scanning lines and the plurality of data lines intersect with each other, and the ON signal is changed between the ON state and the OFF state by the selection signal supplied through the scanning line. Sometimes, an image signal supplied through the data line is transmitted to the pixel electrode so as to adjust a transmission mode or a light emission mode of display light, and when viewed along a perpendicular direction standing on the surface of the substrate, An interlayer film formed on the substrate between the scan line, the data line, and the pixel electrode, or as an upper layer or a lower layer thereof, and the interlayer film includes a first layer of the display light. When the wavelength of the color display light is λ1, the film thickness db3 includes one or more interlayer films defined as db3 = (λ1 / (2 · n3)) × (integer) ( Where n3 is the refractive index of the film), and when the film thickness db4 of the film including the pixel electrode is λ2, the wavelength of the display light of the second color different from the first color is db4 = ( (λ2 / (2 · n4)) × (integer) (where n4 is the refractive index of the pixel electrode, and n4 ≠ n3 or n4 = n3).

According to the present invention, an extremely high light transmittance can be enjoyed in a laminated structure including a scanning line, a data line, a switching element, and an interlayer film.
In other words, the above-described equation for obtaining db3 has the meaning of an equation for obtaining the film thickness for causing the “resonance” phenomenon related to the first color in the one or more interlayer films. The same applies to db4. Therefore, the display light of the first color is emitted without waste from the interlayer film, and the display light of the second color is similarly emitted without waste from the film including the pixel electrode. The significance of the above-described “resonance” will be described again during the description of the embodiment.
As described above, in the present invention, the interlayer film having the film thicknesses db3 and db4 corresponding to the first color and the second color, respectively, and the film including the pixel electrode are provided. The rate is extremely high.
In the above description, parentheses that define “n4”, that is, “n4 ≠ n3 and n4 = n3” have the following significance. That is, first, the case of “n4 ≠ n3” means that each of the interlayer film and the pixel electrode has a different refractive index. Typically, for example, the film is made of a film made of a different material. It implies that it is configured.
On the other hand, the latter “n4 = n3” means that each of the interlayer film and the pixel electrode has the same refractive index. Typically, for example, each of the films made of the same kind of material (ultimately) It is implied that both are made of the same material. In this latter case, in order to cope with display lights having different wavelengths λ1 and λ2, the thicknesses db3 of the films including the interlayer film and the pixel electrode are the same as long as the values of (integer) in the above-described equations are the same. And db4 are naturally different.

In this aspect, the film including the pixel electrode includes, in addition to the pixel electrode, a common electrode set at a common potential for the plurality of pixel electrodes, and the pixel electrode and An interelectrode insulating film sandwiched between the common electrodes, and the film thickness db4 corresponds to a total value of the pixel electrode thickness, the common electrode thickness, and the interelectrode insulating film thickness, You may comprise as follows.
According to this, since the pixel electrode and the common electrode are first provided on the same substrate, if a “liquid crystal layer” is further provided in addition to these elements, liquid crystal driving by a so-called “lateral electric field” method can be performed. . In this configuration, the total value of the film thicknesses of the pixel electrode, the common electrode, and the interelectrode insulating film matches the film thickness db4 of the “film including the pixel electrode”.
Thus, according to this configuration, even when the pixel electrode and the common electrode are provided on the same substrate, the same effect as described above can be obtained.
Further, as long as the total value of the respective film thicknesses matches db4, the respective film thicknesses can take arbitrary film thicknesses, so that the effect of increasing the degree of freedom in setting the respective film thicknesses is also achieved.

In order to solve the above-described problems, an electronic apparatus according to the present invention includes the electro-optical device according to various aspects described above.
The electronic apparatus according to the present invention includes the above-described various electro-optical devices, that is, includes a laminated structure that realizes an extremely high light transmittance that constitutes the electro-optical device. An image can be displayed.

  In order to solve the above problems, an active matrix substrate according to the present invention includes a plurality of scanning lines in a plan view of a substrate, a plurality of scanning lines and a plurality of data lines formed on the substrate. And a pixel electrode formed so as to correspond to a region where the plurality of data lines intersect with each other, and a transition between an ON state and an OFF state by a selection signal supplied through the scanning line, and at the time of the ON state, the data A switching element that adjusts a transmission mode or a light emission mode of display light by transmitting an image signal supplied through the line to the pixel electrode, and the scanning line, as viewed along a perpendicular direction standing on the surface of the substrate. An interlayer film formed on the substrate as a data line and the pixel electrode, or as an upper layer or a lower layer of the data line, and the interlayer film includes the display light. When the wavelength of the display light of one color is λ1, the first-type interlayer film whose thickness db1 is defined as db1 = (λ1 / (2 · n1)) × (integer) (where n1 Is the film thickness db2 when the wavelength of the display light of the second color different from the first color is λ2, and the film thickness db2 is db2 = (λ2 / (2 · n2)) X (integer), a second type of interlayer film (where n2 is the refractive index of the film, and n2 ≠ n1 or n2 = n1) .

According to the active matrix substrate of the present invention, an extremely high light transmittance can be enjoyed in a laminated structure composed of scanning lines, data lines, switching elements, and interlayer films.
In other words, the above-described equation for obtaining db1 has the meaning of an equation for obtaining the film thickness for causing the “resonance” phenomenon relating to the first color in the first type interlayer film. The same applies to db2. Accordingly, the first color display light is emitted without waste from the first type of interlayer film, and the second color display light is also emitted without waste from the second type of interlayer film. The significance of the above-described “resonance” will be described again during the description of the embodiment.
As described above, in the present invention, since the first and second interlayer films having the film thicknesses db1 and db2 suitably corresponding to the first color and the second color, respectively, are provided. The light transmittance is extremely high.
In the above description, “n2” defines parentheses, that is, “n2 ≠ n1 and n2 = n1” has the following significance. That is, first, the case of “n2 ≠ n1” means that each of the first-type and second-type interlayer films has a different refractive index. It is implied that the film is made of a material.
On the other hand, the latter “n2 = n1” means that each of the first-type and second-type interlayer films has the same refractive index. Typically, for example, each of the first-type and second-type interlayer films is made of the same kind of material. It is implied that the film is composed of a film (ultimately both films made of the same material). In this latter case, in order to cope with display lights having different wavelengths λ1 and λ2, if the value of (integer) in each of the above formulas is the same, the respective films of the first type and the second type of interlayer film The thicknesses db1 and db2 are naturally different.

  In order to solve the above problem, an active matrix substrate according to another aspect of the present invention includes a substrate, a plurality of scanning lines and a plurality of data lines formed on the substrate, in plan view, and The pixel electrode formed so as to correspond to a region where the plurality of scanning lines and the plurality of data lines intersect with each other, and the ON signal is changed between the ON state and the OFF state by the selection signal supplied through the scanning line. Sometimes, an image signal supplied through the data line is transmitted to the pixel electrode so as to adjust a transmission mode or a light emission mode of display light, and when viewed along a perpendicular direction standing on the surface of the substrate, An interlayer film formed on the substrate between the scan line, the data line, and the pixel electrode, or as an upper layer or a lower layer thereof. When the wavelength of the display light of the first color of the light is λ1, the film thickness db3 is defined as db3 = (λ1 / (2 · n3)) × (integer), one or two or more In the case where an interlayer film is included (where n3 is the refractive index of the film), and the film thickness db4 of the film including the pixel electrode is λ2 as the wavelength of the display light of the second color different from the first color Db4 = (λ2 / (2 · n4)) × (integer), where n4 is the refractive index of the pixel electrode and n4 ≠ n3, and n4 = n3 possible).

According to the active matrix substrate of the present invention, an extremely high light transmittance can be enjoyed in a laminated structure composed of scanning lines, data lines, switching elements, and interlayer films.
In other words, the above-described equation for obtaining db3 has the meaning of an equation for obtaining the film thickness for causing the “resonance” phenomenon related to the first color in the one or more interlayer films. The same applies to db4. Therefore, the display light of the first color is emitted without waste from the interlayer film, and the display light of the second color is similarly emitted without waste from the film including the pixel electrode. The significance of the above-described “resonance” will be described again during the description of the embodiment.
As described above, in the present invention, the interlayer film having the film thicknesses db3 and db4 corresponding to the first color and the second color, respectively, and the film including the pixel electrode are provided. The rate is extremely high.
In the above description, parentheses that define “n4”, that is, “n4 ≠ n3 and n4 = n3” have the following significance. That is, first, the case of “n4 ≠ n3” means that each of the interlayer film and the pixel electrode has a different refractive index. Typically, for example, the film is made of a film made of a different material. It implies that it is configured.
On the other hand, the latter “n4 = n3” means that each of the interlayer film and the pixel electrode has the same refractive index. Typically, for example, each of the films made of the same kind of material (ultimately) It is implied that both are made of the same material. In this latter case, in order to cope with display lights having different wavelengths λ1 and λ2, the thicknesses db3 of the films including the interlayer film and the pixel electrode are the same as long as the values of (integer) in the above-described equations are the same. And db4 are naturally different.

  Hereinafter, an embodiment according to the present invention will be described with reference to FIGS. 1 and 2. In FIGS. 1 and 2 and other drawings referred to below, the scales of the layers and members are made different for each layer and each member so that each layer and each member can be recognized on the drawings. is there.

<Equivalent circuit of liquid crystal display device>
As shown in FIG. 1, the liquid crystal display device 100 according to the present embodiment includes a plurality of pixels PX in an image display area 10a.
These pixels PX are arranged in a matrix so that a plurality of scanning lines 3 extending in the left-right direction in FIG. 1 and a plurality of data lines 6 extending in the vertical direction intersect with each other. Note that the scanning line 3 is connected to the scanning line driving circuit 103, and the data line 6 is connected to the data line driving circuit 106. The scanning line driving circuit 103 supplies a selection signal to the scanning line 3, and the data line driving circuit 106 supplies an image signal to the data line 6.

Each pixel PX includes a pixel electrode 9, a TFT 30, and a storage capacitor 40.
Among these, the pixel electrode 9 substantially defines the size of the light transmissive region when the pixel PX is viewed in plan. The pixel electrode 9 faces the counter electrode 5 (see FIG. 2). As shown in FIG. 2, a liquid crystal layer LQ is sandwiched between the pixel electrode 9 and the counter electrode 5 so that a potential difference applied between the electrodes 9 and 5 is applied to the liquid crystal layer LQ. It has become.

The TFT 30 has a gate connected to the scanning line 3 and a source connected to the data line 6. Further, the drain of the TFT 30 is connected to the pixel electrode 9, whereby the TFT 30 functions as a switch for determining whether or not to write the image signal supplied through the data line 6 to the pixel electrode 9. ON / OFF of the TFT 30 functioning as the switch depends on the presence or absence of a selection signal supplied through the scanning line 3.
Note that the image signals may be supplied line-sequentially, for example, from the leftmost data line in FIG. 1 to the data line on the right in order. Alternatively, the data lines 6 may be supplied to each of a plurality of data lines 6 adjacent to each other.
In addition, the selection signal is supplied line-sequentially, for example, from the scanning line located at the top in FIG.

  The storage capacitor 40 has one end connected to the source of the TFT 30 and the other end grounded or connected to a constant potential line having a predetermined potential. The storage capacitor 40 is arranged so as to be connected in parallel with a liquid crystal capacitor formed between the pixel electrode 9 and the counter electrode 5. Thereby, the storage capacitor 40 acts so as to hold the potential difference held in the liquid crystal capacitor based on the above-described image signal.

<Structures on the substrate constituting the liquid crystal display device>
As shown in FIG. 2, the liquid crystal display device 100 includes a stacked structure in which the elements constituting the pixel PX described with reference to FIG. 1 are stacked on the first substrate 10.
As shown in FIG. 2, the stacked structure includes a first base film 61, a second base film 51, a gate insulating film 52, and an interlayer insulating film in order from the first substrate 10 toward the upper side in the figure. 53, a protective film 62, and an acrylic resin film 80 are provided.
These films (61, 51, 52, 53, 62, 80) are all included in the concept of “interlayer film” in the present invention.

First, the first substrate 10 is made of a translucent material such as glass, quartz, or plastic.
The first base film 61 and the second base film 51 are also made of a light-transmitting material. In the present embodiment, the first base film 61 is mainly composed of SiN, and the second base film 51 is made of SiO. ₂ is the main component. Each of these films 61 and 51 has different optical characteristics depending on the difference in the material, but a description of this point will be given later.

  On the second base film 51, the TFT 30 is formed. The TFT 30 includes the semiconductor layer 1. The semiconductor layer 1 includes a source region near the left end in the drawing and a drain region near the right end, and a channel region sandwiched between the source region and the drain region (both not shown). The source region further has a high-concentration source region and a low-concentration source region that are classified according to the level of impurity concentration (both not shown). The former occupies the left end of the semiconductor layer 1a and its vicinity, and the latter occupies between the high-concentration source region and the channel region. Similarly, the drain region has a high concentration drain region and a low concentration drain region. Thus, the TFT 30 according to this embodiment employs a so-called LDD (Lightly Doped Drain) structure.

The gate insulating film 52 is formed on the semiconductor layer 1 as described above. A scanning line 3 is formed on the gate insulating film 52 and in a region corresponding to the channel region in the semiconductor layer 1. Thus, a predetermined voltage based on the selection signal supplied through the scanning line 3 can be applied to the channel region of the semiconductor layer 1 through the gate insulating film 52.
On the other hand, the interlayer insulating film 53 is formed on the scanning line 3.
The gate insulating film 52 and the interlayer insulating film 53 described above are made of a translucent material. In the present embodiment, in particular, like the second base film 51, SiO ₂ is the main component.

  Contact holes C 1 and C 2 are formed in the interlayer insulating film 53. Among these, the contact hole C1 is formed so as to communicate with the source region of the semiconductor layer 1, while the contact hole C2 is formed so as to communicate with the drain region of the semiconductor layer 1. A data line 6 is formed on the interlayer insulating film 53 and filling the contact hole C1. Thereby, the image signal supplied through the data line 6 can be supplied to the source region of the semiconductor layer 1. Note that the drain electrode 11 is formed so as to fill the contact hole C2.

  The scanning line 3, the data line 6, and the drain electrode 11 are made of a metal material such as aluminum.

The protective film 62 is formed on the data line 6 and the drain electrode 11 as described above.
The protective film 62 is made of a translucent material. In the present embodiment, SiN is the main component, as in the case of the first base film 61.

  The acrylic resin film 80 is formed on the protective film 62 as described above. As shown in FIG. 2, the acrylic resin film 80 also has a function as a flattening layer for preventing a step generated by forming the TFT 30 and the like from reaching the liquid crystal layer LQ.

A contact hole C3 is formed in the acrylic resin film 80 and the protective film 62 so as to penetrate each of these films and to reach the position where the drain electrode 11 is formed. A pixel electrode 9 is formed on the acrylic resin film 80 so as to fill the contact hole C3. As a result, the pixel electrode 9 is electrically connected to the drain region of the semiconductor layer 1 through the drain electrode 11 of the contact hole C2.
As described above, the image signal on the data line 6 can reach the pixel electrode 9 through the contact hole C1, the semiconductor layer 1, the contact hole C2, and the contact hole C3.
The pixel electrode 9 is made of a translucent and conductive material such as ITO (Indium Tin Oxide).

The alignment film 16 is formed on the pixel electrode 9. The alignment film 16 is in contact with the liquid crystal layer LQ. The surface of the alignment film 16 is subjected to an alignment process for regulating the initial alignment state of the liquid crystal molecules constituting the liquid crystal layer LQ.
Such an alignment film 16 is made of a resin material such as polyimide, for example.
Note that the liquid crystal layer LQ can be configured to operate in a TN mode using a liquid crystal having positive dielectric anisotropy.

  The above is the entire multilayer structure on the first substrate 10 side, but the liquid crystal display device 100 is constructed on the second substrate 20 with the liquid crystal layer LQ interposed therebetween in addition to such a multilayer structure. A laminated structure is provided. As shown in FIG. 2, the stacked structure includes a light shielding film BM, a color filter CF, a counter electrode 5, and an alignment film 26 in order from the second substrate 20 toward the lower side in the figure.

First, the second substrate 20 is made of a translucent material such as glass, quartz, or plastic.
Further, the light shielding film BM is formed so as to border the formation region of the pixel electrode 9 in plan view. The light shielding film BM is made of an appropriate light shielding material such as a light absorbing or light reflecting metal or resin. Such a light shielding film BM prevents light from being mixed between adjacent pixel electrodes 9.

The color filter CF is formed so as to almost cover the formation region of the pixel electrode 9 in plan view. The color filter CF is made of a light transmissive resin material or the like. Such a color filter CF transmits only light in a predetermined wavelength region among light emitted from the illumination device LB described later.
In FIG. 2, only one type of color filter CF is shown because only a laminated structure for one pixel is illustrated, but in reality, two or more types of color filters CF are mounted. The In the present embodiment, in particular, two color filters for red and green are prepared as the color filter CF.

The counter electrode 5 is formed so as to cover the light shielding film BM and the color filter CF described above. The counter electrode 5 is made of a light-transmitting and conductive material such as ITO similarly to the pixel electrode 9 described above. By setting the counter electrode 5 to a predetermined potential, it is possible to set a desired potential difference with the pixel electrode 9.
The liquid crystal layer LQ changes its orientation state according to the magnitude of the potential difference set between the counter electrode 5 and the pixel electrode 9 or the difference in the application mode. By changing the alignment state, the light transmission mode in the liquid crystal layer LQ is adjusted. Note that the magnitude of the potential difference between the electrodes 5 and 9 depends on the state of the image signal supplied to the pixel electrode 9 via the TFT 30.

  The alignment film 26 is formed on the counter electrode 5, and this alignment film 26 plays the same role as the alignment film 16. The same applies to the constituent materials.

In addition to the above, the liquid crystal display device 100 includes a polarizing plate 15 on the lower surface side of the first substrate 10 in the drawing and a polarizing plate 25 on the upper surface side of the second substrate 20 in the drawing, as shown in FIG. . These polarizing plates 15 and 25 have their transmission axes orthogonal to each other.
In addition, the liquid crystal display device 100 includes an illumination device LB as shown in FIG. The illumination device LB includes, for example, an LED (Light Emitting Diode) and a planar light guide. In this case, after the light emitted from the LED is incident on one side surface of the planar light guide, it is appropriately scattered in the inside thereof and finally emitted from the wide surface facing the deflection plate 25. Such emitted light L passes through the laminated structure on the substrate 20 or the laminated structure on the substrate 10 described above. At this time, in the formation region of the green color filter CF, light is colored so to speak green, and in the formation region of the red color filter CF, light is colored so to speak (to the left in FIG. 2). (See arrow flow shown.)

  In FIG. 2, the storage capacitor 40 shown in FIG. 1 is not shown. The storage capacitor 40 includes, for example, a first electrode extending from the drain electrode 11 at the interface between the interlayer insulating film 53 and the protective film 62, and the first electrode extending from the drain electrode 11 at the interface between the interlayer insulating film 53 and the acrylic resin film 80. By adopting a structure such as forming a second electrode facing one electrode, it can be easily formed.

  The present embodiment is particularly characterized in the configuration related to the interlayer insulating film 53 and the like in the above-described laminated structure.

That is, first, among the various “interlayer films” described above, the first base film 61 and the protective film 62 constitute a specific example of the “first type interlayer film” according to the present invention. However, in the present embodiment, in particular, each of the first underlayer film 61 and the protective film 62 has a relevance to the concept of “first type interlayer film” independently and independently.
That is, the first base film 61 or the protective film 62 has a thickness of 285 [nm] as shown as “optimal example” in FIG. 3, and the protective film 62 also has a thickness of 285 [ nm]. The film thickness Dr1 of 285 [nm] is based on the following calculation formula.
d1 = (λ1 / (2 · n1)) × (integer) = (535 / (2 × 1.85)) × 2 (1)
Here, λ1 represents the center wavelength when it is assumed that the wavelength of green light emitted from the illumination device and passed through the green color filter CF is 500 to 570 [nm]. Obviously, from the assumption just described, λ1 = 535 [nm]. N1 means the refractive index of the first base film 61 or the protective film 62. Since these films 61 or 62 are mainly composed of SiN as described above, n1 = about 1.85. Both λ1 and n1 are constants in this embodiment under such a premise. In the above formula, “integer” means that an arbitrary integer may be selected, and the rightmost side indicates that “2” is selected.

When such d1 is calculated, a solution of d1 = about 289.2 [nm] is obtained. Although this is different from the above-mentioned 285 [nm], the actual film thickness Dr1 is ± (λ1 / (8 · n1)) ≈ ± 36.2 [nm] centering on the above-mentioned d1 having the characteristic of an ideal value. ] Is set within the allowable range. This is permitted due to the existence of inevitable errors that occur in manufacturing, or the existence of errors due to the fact that the idea of setting the center wavelength is strictly just an assumption. It is also necessary.
Thus, the film thickness Dr1 of the first base film 61 or the protective film 62 is set to 285 [nm].

In the present embodiment, the film thickness of the pixel electrode 9 is determined based on the equation (1) as in the case of the “first type interlayer film” in the present invention. The film thickness is 135 [nm] as shown in the column “optimum example” in FIG. Note that the refractive index of green light of ITO constituting the pixel electrode 9 is about 1.98.
Thus, in the present invention, the film thickness db1 that defines the concept of the “first type of interlayer film” or the concept of the “second type of interlayer film” or the film thickness of films other than the “interlayer film” This can be calculated using a calculation formula for obtaining db2 (or do1, or do2).

Second, among the various “interlayer films” described above, the second base film 51, the gate insulating film 52, and the interlayer insulating film 53 constitute a specific example of the “second type interlayer film”. However, in the present embodiment, in particular, the second base film 51, the gate insulating film 52, and the interlayer insulating film 53 are integrated, and have a relevance to the concept of “second type interlayer film”.
That is, the integration of the second base film 51, the gate insulating film 52, and the interlayer insulating film 53 (hereinafter sometimes referred to as “red corresponding layers 51 to 53”) is shown as “optimal example” in FIG. Its thickness is 1135 [nm]. The film thickness Dr2 of 1135 [nm] is based on the following calculation formula.
d2 = (λ2 / (2 / n2)) × (integer) = (665 / (2 × 1.5)) × 5 (2)
Here, λ2 represents the center wavelength when the wavelength of red light emitted from the illumination device and passing through the red color filter CF is assumed to be 630 to 700 [nm]. From the assumption just described, it is apparent that λ2 = 665 [nm]. N2 means the refractive index of the second base film 51, the gate insulating film 52, and the interlayer insulating film 53. Since these films 51, 52 and 53 are mainly composed of SiO ₂ as described above, n2 = about 1.5. Both λ2 and n2 are constants in this embodiment under such a premise. In the above formula, “integer” means that an arbitrary integer may be selected, and the rightmost side indicates that “5” is selected.

When such d2 is calculated, a solution of d2 = about 1108.3 [nm] is obtained. This is different from the above-mentioned 1135 [nm], but the actual film thickness Dr2 is ± (λ2 / (8 · n2)) ≈ ± 55.4 [nm, centering on the d2 having the characteristic of an ideal value. ] Is set within the allowable range. The significance is the same as that described for d1 above.
In this way, the film thickness Dr2 of the red corresponding layers 51 to 53 is determined to be 1135 [nm].

In the present embodiment, the acrylic resin film 80 also constitutes a specific example of the “second type interlayer film” referred to in the present invention, and the film thickness thereof is determined based on the formula (2). ing. The film thickness is 2078 [nm] as shown in the column of “Optimum example” in FIG. The refractive index for red light of the acrylic resin film 80 is about 1.44.
Thus, according to the present invention, the “second type interlayer film” includes the red corresponding layers 51 to 53 as “a plurality of interlayer films” as described above, and the acrylic resin film as a single-layer interlayer insulating film. The form of including 80 is also included in the range. Needless to say, the same can be said for the “first type interlayer film”.

<Effects of liquid crystal display device>
Hereinafter, the operational effects of the liquid crystal display device 100 having the above-described configuration will be described with reference to FIG. 4 in addition to FIGS. 1 to 3 already referred to.
According to the liquid crystal display device 100 according to the present embodiment, as described above, the film thickness Dr1 of the first base film 61 or the protective film 62 (and the film thickness of the pixel electrode 9), and the red corresponding layers 51 to 53 The film thickness Dr2 (and the film thickness of the acrylic resin film 80) is determined based on the equations (1) and (2), respectively.
For this reason, in this embodiment, as shown in the column of “optimum example” in FIG. 3, the transmittance of green light is 84.1%, the transmittance of red light is 80.4%, A very high transmittance of 82.2% has been achieved. Here, “transmittance” means the ratio of the amount of light after passing through the deflection plate 15 to the amount of light immediately after exiting the illumination device LB shown in FIG.

The reason why such a high transmittance is achieved will become clear below.
That is, the above-mentioned formulas (1) and (2) are based on the calculation results shown in FIG.
First, in FIG. 4, “resonance” generally refers to a film having a certain thickness d.
2d = (λ / (2n)) × (2m) (3)
Means that “interference” is the same as
2d = (λ / (2n)) × (2m + 1) (4)
Means that is true. Where λ is the wavelength of light of interest, n is the refractive index of the film, and m is an arbitrary integer.
In this sense, the phenomenon of “resonance” means that light incident on the film is emitted without reducing its amplitude even if it is repeatedly reflected at both interfaces of the film. (Alternatively, this means that the phases of incident light and outgoing light are aligned with respect to the film). On the other hand, the phenomenon of “interference” means that the amplitude is attenuated.
For this reason, when light of a certain wavelength is incident on a certain film, it is preferable to cause the “resonance” phenomenon referred to here in order not to cause attenuation.

  In the table of FIG. 4, each column named “resonance film thickness” is based on the equation (3) when the center wavelengths of green light and red light are assumed to be 535 [nm] and 665 [nm], respectively. If the film thicknesses of the first base film 61, the protective film 62, the red corresponding layers 51 to 53, the acrylic resin film 80, and the pixel electrode 9 are set to any values, the “resonance” phenomenon occurs. It summarizes what happens. The same applies to each column named “interference film thickness”. However, each film thickness in this case is calculated based on the above equation (4), not the above equation (3).

The above formulas (1) and (2) are substantially the same as the above formula (3), as is apparent from the table. That is, the “optimum example” in FIG. 3 is a result of setting the film thickness of these films 61 or 62 so as to cause the “resonance” phenomenon related to green light in the first base film 61 or the protective film 62. This is also the result of setting the film thickness of the red corresponding layers 51 to 53 so as to cause the “resonance” phenomenon related to red light in the red corresponding layers 51 to 53.
Specifically, the film thicknesses of the first base film 61 and the protective film 62 in this “optimum example” are the columns of “green” and “resonance film thickness” in FIG. The numerical values (“283” and “285”) located at the intersections with the row of the “protective film 62” are reflected, and the film thicknesses of the red corresponding layers 51 to 53 are “red” in FIG. This means that the numerical value (“1139”) located at the intersection of the “thickness” column and the row of “red corresponding layers 51 to 53” is reflected.
The same applies to the pixel electrode 9 and the acrylic resin film 80.

  In addition, the calculation result of FIG. 4 is not as the calculated value obtained by (3) Formula and (4) Formula. This is because an actual laminated structure takes into account the occurrence of subtle variations in refractive index based on component variations and the like. There is a difference between the calculation result of FIG. 4 and the film thickness shown in the optimum example of FIG. 3 (and Comparative Examples 1 to 3 to be described later) reflecting the calculation result (for example, “red” and “resonance film of FIG. 4). "1139" at the intersection of the "thickness" column and the row of "red corresponding layers 51 to 53", and "1135" for "red corresponding layers 51 to 53" in "optimum example" in FIG. For the same reason as described above.

  As is clear from the above, in the “optimum example” of FIG. 3, the “resonance” phenomenon with respect to green light occurs in the first base film 61 or the protective film 62 (or in the pixel electrode 9). As a result of the “resonance” phenomenon of red light occurring in the red corresponding layers 51 to 53 (or the acrylic resin film 80), as described above, extremely high transmittance is achieved for both the green light and the red light. It is.

The significance of the operational effects according to this embodiment becomes clearer through comparison with the comparative example.
First, “Comparative Example 1” in FIG. 3 has the following significance. That is, this comparative example 1 represents a film thickness configuration example focused on only the “interference” phenomenon, in other words, in the worst case. That is, as can be seen from the figure, the comparative example 1 reflects only the numerical value existing in the column of “interference film thickness” in FIG. For example, the film thickness of the red corresponding layers 51 to 53 in the comparative example 1 is 1025 [nm]. This corresponds to the “red” and “interference film thickness” columns in FIG. Reflecting “1025”, which is an intersection with the row of “51 to 53”, the film thickness of 356 [nm] of the first base film 61 corresponds to “green” and “interference film thickness” of FIG. This reflects “354” which is the intersection between the column and the row of the “first base film 61”.
As described above, in Comparative Example 1, a situation in which the “interference” phenomenon is extremely likely to occur.

  The result of Comparative Example 1 is far from the optimum example. That is, in Comparative Example 1, as shown in FIG. 3, the green light transmittance is 69.2%, the red light transmittance is 77.9%, and the overall transmittance is 73.5%. Only transmittance is achieved. This is thought to be due to the fact that only the “interference” phenomenon is focused.

  In this way, the superiority of adopting the configuration focusing on the “resonance” phenomenon as in the present embodiment is confirmed again.

Next, “Comparative Example 2” in FIG. 3 has the following significance. That is, this comparative example 2 represents a film thickness configuration example that focuses on only the “resonance” phenomenon of red light. That is, as can be seen from the figure, first, the red corresponding layers 51 to 53 are the same as the “optimum example”. This is a result of reflecting “1139” which is an intersection of the “red” and “resonance film thickness” columns of FIG. 4 and the rows of “red corresponding layers 51 to 53”. The first base film 61 is different from the “optimum example”. This reflects “283”, which is the intersection of the “green” and “resonance film thickness” columns in FIG. 4 and the row of the “first base film 61” in the “optimal example”. This is because “Comparative Example 2” reflects “356”, which is an intersection of the “red” and “resonance film thickness” columns of FIG. 4 and the row of “first base film 61”. . The same applies to the protective film 62.
Thus, Comparative Example 2 shows an example of a film thickness configuration specialized for “resonance” of red light.

However, the result of Comparative Example 2 does not reach the optimum example.
Indeed, in Comparative Example 2, the transmittance of green light and red light as a whole is 80.5%, and a relatively high transmittance is achieved. In particular, because Comparative Example 2 is specialized for red light, the transmittance of red light is marked as 84.1%, which is superior to the optimum example.
However, for the same reason, the transmittance of green light is 77.0%, which is far from 84.1% in the case of the optimum example. Although the result of the film thickness 356 [nm] of the first base film 61 or the protective film 62 is certainly “resonance film thickness” of “red”, at the same time, “green” in each of the films 61 or 62 This is probably because the situation of “interference film thickness” is particularly effective (see FIG. 4).
As a result, the overall transmittance is 80.5%, which is less than the optimum example.

  In this way, even when paying attention to the “resonance” phenomenon, it is better to adopt a configuration that pays attention to two colors as in the present embodiment than to adopt a configuration specialized for only one color. It turns out that it is more dominant.

Finally, “Comparative Example 3” in FIG. 3 has the following significance. In other words, this comparative example 3 represents a film thickness configuration example that focuses on the concept of leveling out the differences between the colors. That is, in the comparative example 3, as described above or as shown in FIG. 4, the central wavelengths of “red” and “green” are not set and considered separately, but these two colors are used. The center wavelength of the entire wavelength region is set and the “resonance” or “interference” is considered. Specifically, it is assumed that “green” is 500 to 570 [nm] and “red” is 630 to 700 [nm], and according to the idea that these minimum and maximum limits are taken, the total wavelength of these Since the region is 500 to 700 [nm], the central wavelength is 600 [nm]. Comparative Example 3 is a combination of film thickness values for causing “resonance” when the light having the center wavelength of 600 [nm] is incident on each film (in this case, the expression (3) described above is combined). Used.).
Thus, Comparative Example 3 shows an example of a film thickness configuration that focuses on the idea of leveling the difference between the colors.

However, the result of Comparative Example 3 is also less than the optimum example. That is, in Comparative Example 3, only a relatively low transmittance is achieved with a green light transmittance of 73.2%, a red light transmittance of 86.0%, and a total transmittance of 79.6%. It is not.
This is presumably because, in the case of Comparative Example 3, the consideration for the “green” color has been neglected as a result of adopting the center wavelength as described above. In any case, adopting the concept of leveling each color is preferable because it will make you worry about any of the colors or create a halfway situation for any color. The result will not be born.

  In this way, even if paying attention to the “resonance” phenomenon, the two colors are used while paying attention to each of the two colors as in this embodiment, rather than adopting the concept of leveling each color. It can be seen that it is more advantageous to adopt the concept of causing the “resonance” phenomenon for.

As described above, according to the liquid crystal display device 100 of the present embodiment, extremely high transmittance can be achieved, so that a brighter image can be displayed without increasing power consumption.
In other words, if an image having the same brightness as before is displayed, the power consumption can be further reduced.

In the present embodiment, in particular, the pixel electrode 9 is optimized for green light, and the acrylic resin film 80 is optimized for red light. This also contributes to the realization of extremely high transmittance as shown in the column of “Optimum example” in FIG.
As described above, in this embodiment, from the viewpoint of requirements constituting the present invention, a “resonance” phenomenon occurs even in each film that does not necessarily need to be optimized based on the above formula (3). Since optimization has been made, it is possible to more effectively enjoy the effect of realizing extremely high transmittance.
It should be noted that even in such a case, it is not included in the scope of the present invention.

While the embodiments according to the present invention have been described above, the electro-optical device according to the present invention is not limited to the above-described embodiments, and various modifications can be made.
(1) First, in the above embodiment, attention is paid to two colors of “green” and “red”, but the present invention is not limited to such a form. In addition, for example, the present invention can naturally be applied to a combination of “green” and “blue” or “blue” and “red”.
In the above description, in order to derive the optimum example of FIG. 3, it is assumed that the wavelength of green light is 500 to 570 [nm] and the wavelength of red light is 630 to 700 [nm]. The invention is of course not limited to such assumptions. Actually, for example, the wavelength band changes even if they are the same “green” color filter only by changing the components / materials, the manufacturing method, etc. of the color filter CF in FIG. Will of course also change.)
The present invention can be applied to such a case without any problem.

(2) In the above embodiment, each of the first base film 61 and the protective film 62 corresponds to the “first type interlayer film” according to the present invention, and the “second type interlayer film” corresponds to the “second type interlayer film”. The red corresponding layers 51 to 53, that is, the second base film 51, the integral of the gate insulating film 52 and the interlayer insulating film 53, and the acrylic resin film 80 are respectively applicable. The form is not limited.
Specific examples thereof can be assumed infinitely in principle, and thus cannot be enumerated one by one. In short, if a “resonance” phenomenon occurs with respect to two colors of display light, “first” The specific configurations of the “type interlayer film” and the “second type interlayer film” may be basically any configuration.

(3) In this regard, in the above-described embodiment, the “first type interlayer film” referred to in the present invention corresponds to the first base film 61 and the protective film 62, both of which are mainly composed of SiN. The “second type interlayer film” corresponds to the red-corresponding layers 51 to 53, which are films mainly composed of SiO _2. However, the present invention is also limited to such a form. Not. For example, a form in which both the “first type interlayer film” and the “second type interlayer film” are composed of a film mainly composed of SiN is also within the scope of the present invention. In this case, the refractive indexes of both may be the same or at least substantially the same, but even in such a case, measures such as making the film thicknesses of the first-type and second-type interlayer films different may be taken. If so, it is still possible to produce a “resonance” phenomenon for different colors. In the above embodiment, as already mentioned, the “second type interlayer film” includes both the red corresponding layers 51 to 53 mainly composed of SiO ₂ and the acrylic resin film 80. In a typical application situation, each of the films made of different materials may have relevance to “first type interlayer film” or “second type interlayer film”.
In short, the concept of “first type of interlayer film” and “second type of interlayer film” is not a concept that focuses on the fact that each of them is made of a different material, but different wavelengths λ1 and λ2 respectively. Note that this is a concept introduced to indicate that there are different types of “interlayer films” corresponding to.

(4) In the above embodiment, the liquid crystal display device 100 that includes the pixel electrode 9 and the counter electrode 5 sandwiching the liquid crystal layer LQ and to which a “vertical electric field” is applied to the liquid crystal layer LQ has been described. The invention is not limited to such a form. That is, for example, as shown in FIGS. 5 and 6, the present invention can also be applied to a liquid crystal display device in which a so-called “lateral electric field” is applied to the liquid crystal layer LQ.

  As shown in FIG. 5, the liquid crystal display device includes a pixel electrode 91 and an interelectrode insulating film 65 and a common electrode 92 in order on the pixel electrode 91. The liquid crystal display device of FIG. 5 is different only in these points when compared with FIG. 2, and is common in other points. The common points of the two are given the same reference numerals in the drawings, and the description thereof is omitted. In addition, in FIG. 5, illustration about some elements, such as the illuminating device LB, is abbreviate | omitted.

Among these, the pixel electrode 91 has a function that is not essentially different from the function of the pixel electrode 9 shown in FIG. That is, the pixel electrode 91 is electrically connected to the drain of the TFT 30 via the contact holes C2 and C3, and the voltage based on the image signal is applied to the pixel electrode 91 like the pixel electrode 9. It has become.
On the other hand, the common electrode 92 also has substantially the same function as the counter electrode 5 shown in FIG. However, the significance is that the common electrode 92 functions as a pair with the pixel electrode 91 and the counter electrode 5 functions as a pair with the pixel electrode 9 in the same dimension. As long as it can be caught.
There is a significant difference between the common electrode 92 and the counter electrode 5 with respect to the planar shape or the arrangement position in the laminated structure. That is, first, as shown in FIG. 6, the planar shape of the common electrode 92 is a rectangular shape having almost the same area as the area occupied by all the pixels, but there are a plurality of common electrodes 92 for each region corresponding to each pixel. (In FIG. 6, only one pixel electrode 91 is shown in FIG. 6). Further, as shown in FIG. 5, the common electrode 92 does not constitute a part of the laminated structure on the second substrate 20 side like the counter electrode 5, but is one of the laminated structures on the first substrate 10 side. Part.
The pixel electrode 91 and the common electrode 92 are preferably composed mainly of ITO, for example.

Finally, the interelectrode insulating film 65 constitutes a part of the laminated structure on the first substrate 10 side so as to be sandwiched between the pixel electrode 91 and the common electrode 92 described above. The interelectrode insulating film 65 has a function of preventing a short circuit between the two electrodes (91, 92).
Such an interelectrode insulating film 65 is preferably composed mainly of SiN, for example. More preferably, SiN (low temperature SiN) formed at a low temperature may be used.

  In the liquid crystal display device having such a structure, the liquid crystal layer LQ changes its alignment state according to the magnitude of the potential difference set between the pixel electrode 91 and the common electrode 92 or the difference in the application mode. . By changing the alignment state, the light transmission mode in the liquid crystal layer LQ is adjusted. In this case, the lines of electric force connecting the pixel electrode 91 and the common electrode 92 firstly pass through the slit 92a and secondly reverse while traversing the liquid crystal layer LQ, or vice versa. (However, the electric lines of force are not shown). As described above, in the liquid crystal display device shown in FIGS. 5 and 6, unlike the liquid crystal display device 100 described above, a horizontal electric field is applied to the liquid crystal layer LQ.

Even in the liquid crystal display device having the above-described structure, the pixel electrode 91, the common electrode 92, and the interelectrode insulating film 65 are adjusted in film thickness so as to cause a “resonance” phenomenon for any color. For example, it is apparent that the operational effects that are not essentially different from the operational effects achieved by the above-described embodiment are achieved.
However, in this case, it is possible to handle the pixel electrode 91 and the common electrode 92 as a single unit by paying attention to the point that the inter-electrode insulating film 65 can be made of low-temperature SiN. is there. In this case, the refractive indexes of both of the green light are 1.98 (ITO) and 1.86 (low temperature SiN), respectively, and the refractive indexes of the red light are 1.85 (ITO). ) And 1.85 (low temperature SiN), which are the same value.
According to this, it is the same as the above-mentioned handling regarding “red corresponding layers 51 to 53” (or “first type interlayer film” or “second type interlayer film” referred to in the present invention is “a plurality of adjacent plural layers”. The integrated structure of the pixel electrode 91, the interelectrode insulating film 65, and the common electrode 92 corresponds to the “film including a pixel electrode” in the present invention, and the integrated film The thickness is determined based on the aforementioned equation (3). As a result, as long as the integral film thickness is determined based on the above-described equation (3), the pixel electrode 91, the interelectrode insulating film 65, and the common electrode 92 have any film thickness. Therefore, there is an effect that the degree of freedom in setting each film thickness is increased.

  The liquid crystal display device shown in FIGS. 5 and 6 described above corresponds to a so-called FFS (Field Fringe Switching) method, but the present invention is directed to a liquid crystal display device employing a so-called IPS (In Phase Switching) method. However, it can be applied.

(5) The “electro-optical device” in the present invention refers to a device that can display a predetermined image by including an electro-optical element. Here, the “electro-optical element” is an element whose optical characteristics such as transmittance and luminance change when an electric signal (current signal or voltage signal) is supplied. The predetermined image can be displayed by arranging a plurality of electro-optical elements in an appropriate manner and appropriately controlling them.
Specific devices or embodiments that fall under the concept of the “electro-optical device” are as follows, for example.
That is, a display panel using a light emitting element such as an inorganic EL (Electro Luminescent), an organic EL, or a light emitting polymer, or a microcapsule including a colored liquid and white particles dispersed in the liquid is used as an electro-optical material. An electrophoretic display panel, a twist ball display panel using a twist ball painted in a different color for each region of different polarity as an electro-optical material, a toner display panel using black toner as an electro-optical material, or, A plasma display panel using a high pressure gas such as helium or neon as an electro-optical material.
In these cases, when the “electro-optical element” itself has a light emitting function, the “electro-optical element” also serves as a “light source”.

<Application example>
Next, an electronic apparatus using the liquid crystal display device 100 according to the present invention will be described. FIGS. 7 to 10 show forms of electronic devices that employ the liquid crystal display device 100 according to any of the forms described above.

  FIG. 7 is a perspective view illustrating a configuration of a mobile personal computer that employs the display device 100. The personal computer 2000 includes a liquid crystal display device 100 that displays various images, and a main body 2010 on which a power switch 2001 and a keyboard 2002 are installed.

  FIG. 8 is a perspective view showing a configuration of a mobile phone to which the liquid crystal display device 100 is applied. The cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and a liquid crystal display device 100 that displays various images. By operating the scroll button 3002, the screen displayed on the liquid crystal display device 100 is scrolled.

  FIG. 9 is a perspective view showing a configuration of a personal digital assistant (PDA) to which the liquid crystal display device 100 is applied. The portable information terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and the display device 100 that displays various images. When the power switch 4002 is operated, various information such as an address book and a schedule book are displayed on the liquid crystal display device 100.

FIG. 10 is a diagram illustrating a configuration of a car navigation device to which the liquid crystal display device 100 is applied. The car navigation device 5000 includes a plurality of operation buttons 5001 and a liquid crystal display device 100 that displays various images. When the operation button 5001 is operated, various information such as a road map including route information, traffic jam information, or recommended sightseeing spots are displayed on the liquid crystal display device 100.
In the car navigation device 5000, the liquid crystal display device 100 can be used to display a moving image based on a DVD, a video tape, a television reception signal, or the like.

  The electronic apparatus to which the liquid crystal display device 100 according to the present invention is applied includes, in addition to the apparatuses illustrated in FIGS. 7 to 10, a digital still camera, a television, a video camera, a pager, an electronic notebook, electronic paper, a calculator, Examples include a word processor, a workstation, a videophone, a POS terminal, a printer, a scanner, a copying machine, a video player, and a device equipped with a touch panel.

1 is an equivalent circuit diagram of a liquid crystal display device according to an embodiment of the present invention. It is sectional drawing of the structure on the board | substrate for 1 pixel which comprises a liquid crystal display device. It is a figure which shows the relationship between the film thickness structural example of each layer of FIG. 2, and light transmittance, Comprising: It is a figure which shows the optimal example and Comparative Examples 1 thru | or 3. It is a figure which shows the film thickness of the said each layer in case each "resonance" and "interference" of "green" and "red" arise in each layer of FIG. It is sectional drawing of the structure on the board | substrate for 1 pixel which comprises the liquid crystal display device which concerns on a modification. FIG. 6 is a perspective view showing an outline of the shapes of pixel electrodes and common electrodes constituting the liquid crystal display device shown in FIG. 5 and their arrangement relation. It is a perspective view which shows the form (personal computer) of the electronic device which concerns on this invention. It is a perspective view which shows the form (cellular phone) of the electronic device which concerns on this invention. It is a perspective view which shows the form (mobile information terminal) of the electronic device which concerns on this invention. It is a figure which shows the form (car navigation apparatus) of the electronic device which concerns on this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 ... Liquid crystal display device, 1 ... Semiconductor layer, 3 ... Scan line, 6 ... Data line, 9, 91 ... Pixel electrode, 30 ... TFT, 40 ... Storage capacity, 10 ... 1st board | substrate , 61... First base film, 62... Protective film, 51... Second base film, 52... Gate insulating film, 53... Interlayer insulating film, 80. 5 ... Counter electrode, CF ... Color filter, BM ... Light-shielding film, LB ... Illumination device

Claims (2)

A substrate,
A plurality of scanning lines and a plurality of data lines formed on the substrate;
A pixel electrode formed so as to correspond to a region where the plurality of scanning lines and the plurality of data lines intersect in plan view;
A transition state of display light by transitioning between an ON state and an OFF state by a selection signal supplied through the scanning line and transmitting an image signal supplied through the data line to the pixel electrode in the ON state. A switching element for adjusting the light emission mode;
An interlayer film formed on the substrate between the scanning line, the data line, and the pixel electrode, or as an upper layer or a lower layer of the scanning line, the vertical direction standing on the surface of the substrate,
With
The interlayer film has a thickness db3 defined as db3 = (λ1 / (2 · n3)) × (integer), where λ1 is the wavelength of the first color of the display light. Including one or more interlayer films (where n3 is the refractive index of the film),
When the film thickness db4 of the film including the pixel electrode has a wavelength of display light of a second color different from the first color as λ2, db4 = (λ2 / (2 / n4)) × (integer), (Where n4 is the refractive index of the pixel electrode and n4 ≠ n3 or n4 = n3),
The film including the pixel electrode includes the pixel electrode,
A common electrode set at a common potential for the plurality of pixel electrodes;
An inter-electrode insulating film sandwiched between the pixel electrode and the common electrode when viewed along the perpendicular direction;
Including
The film thickness db4 is
It corresponds to the total value of the thickness of the pixel electrode, the thickness of the common electrode and the thickness of the interelectrode insulating film,
An electro-optical device.   An electronic apparatus comprising the electro-optical device according to claim 1.

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