JP5166015B2 - Frequency adjustment device - Google Patents

Description

The present invention relates to a frequency adjustment device .

  Conventionally, as a surface-mountable piezoelectric vibrator used for electronic equipment, for example, a crystal vibrator has been used. As this crystal resonator, one having a structure in which a crystal resonator element is mounted on a container body made of an insulating material having a recess and hermetically sealed with a lid is proposed (for example, see Patent Document 1).

In a conventionally used crystal resonator, the structure of a crystal resonator element is provided at one end of a crystal plate to energize the crystal plate, excitation electrodes provided on both main surfaces thereof, and these excitation electrodes. And a routing pattern to be formed.
These routing patterns are provided in pairs, and one routing pattern is connected to an excitation electrode provided on one main surface, and one corner at one end of the crystal plate. Has been routed to the department. The other routing pattern is connected to an excitation electrode provided on the other main surface, and is routed to another corner at one end of the crystal plate.
Each routing pattern is routed so as to face both main surfaces of the crystal plate at the corners, and is also provided on the side surface of the crystal plate.

  When manufacturing such a crystal resonator element, first, the shape of the excitation electrode and the lead pattern are formed on the crystal wafer, using a technique such as photolithography, at the outer position of the crystal plate serving as a plurality of crystal resonator elements. At this time, a metal film is formed on the crystal wafer by electrolytic plating, electroless plating, sputtering, vapor deposition, or the like on the crystal wafer, and a portion that becomes an excitation electrode and a lead pattern in accordance with the position of the outer shape of the crystal plate. Apply resist to Thereafter, etching is performed to remove the exposed metal film, and then the resist is removed to form excitation electrodes and routing patterns on both main surfaces of the quartz wafer. After separating each crystal plate into individual pieces, a mask is applied to the crystal plate, and a metal film is formed on the side surface of the crystal plate which is a part of the drawing pattern by vapor deposition or sputtering, thereby completing the drawing pattern.

As described above, conventionally used crystal resonator elements tend to be miniaturized as electronic devices are miniaturized. For example, the crystal unit container has a length of 2.0 mm and a width of 1. mm. If it is 6 mm in size, it must be manufactured in a smaller size.
Therefore, the smaller the container size, the smaller the size of the quartz crystal vibration element must be manufactured. The same applies to, for example, a piezoelectric oscillator having a structure in which two concave portions are provided in one container body. For example, in the case where two recesses are formed on the same plane of the container body, or in the case of a piezoelectric oscillator in which recesses are formed on both main surfaces, miniaturization is progressing. The vibration element is also required to be downsized.

  In addition, the frequency adjustment of such a piezoelectric vibration element also requires measurement of the frequency while energized with excitation electrodes provided on both main surfaces of the piezoelectric vibration element provided with a lead pattern on the side surface (for example, patents). Reference 2). In this case, a jig is used that includes a base plate on which a plurality of container bodies in a piece state can be fixed, and a mask provided with a predetermined pattern of through portions. When frequency adjustment is performed a plurality of times, a jig provided with a different mask may be used.

JP2007-067795 JP 2006-211142 A

In order to improve productivity, it is effective to handle a member to be miniaturized with a wafer.
However, in the case of a crystal resonator element, the process up to the step of providing excitation electrodes and routing patterns in a predetermined part of a region that becomes a plurality of crystal plates on a crystal wafer is handled by the wafer. Since the routing pattern is provided, the following problems occur.
First, the process up to this point was good because the excitation electrode and the like were formed in the state of the wafer. However, the crystal pattern must be provided on the side surface after being separated into individual crystal pieces. A metal mask having a predetermined part penetrating a piece must be overlaid to provide a metal film, and the effectiveness of advancing work on a wafer has not been achieved.
In addition, since the excitation electrode provided on the quartz plate becomes smaller as the quartz crystal resonator and the quartz resonator element used in the quartz oscillator become smaller, the accuracy of masking can be improved to form a part of the drawn pattern on the side surface of the quartz plate. It must be increased, and workability may deteriorate. As a result, there are concerns that frequent failures and deterioration in yield will occur.
In addition, since the quartz plate is small, handling is poor, and it is difficult to form a part of the pattern by individually drawing the quartz plate on the side surface.

In addition, when a routing pattern is provided on the side surface of the piezoelectric vibration element, or when frequency adjustment is performed, a mask for providing a routing pattern is provided on the side surface of the piezoelectric vibration element, and the mask is different each time the frequency adjustment is performed. A process of changing the container with the piezoelectric vibration element or the piezoelectric vibration element mounted on the tool had to be performed.
Accordingly, the switching operation between the atmospheric pressure state and the vacuum state of the frequency adjusting device has become complicated in accordance with the frequency of replacement of the mask.

Therefore, the present invention provides a frequency adjusting device that solves the above-described problems and that can reliably energize the piezoelectric vibrating element and the container body even when the piezoelectric vibrating element is miniaturized and can easily adjust the frequency. This is the issue.

In order to solve the above-described problems, the present invention provides a frequency adjusting device for a piezoelectric vibrator, and a side metal film provided with a side metal film forming means for providing a side metal film on a side surface of a piezoelectric vibration element mounted on a container body. A second frequency adjusting unit including a forming chamber, a first frequency adjusting chamber including a first frequency adjusting unit configured to adjust a frequency of the piezoelectric vibrating element, and a second frequency adjusting unit configured to further adjust a frequency of the piezoelectric vibrating element. And a transfer means for transferring the container body on which the piezoelectric vibration element is mounted in order from the chamber, the side metal film forming chamber, the first frequency adjustment chamber, and the second frequency adjustment chamber.

  In the present invention, the side surface metal film forming means is used to overlap with a container body on which the piezoelectric vibration element is mounted, and has a routing pattern connected to an excitation electrode facing the opening side of the container body. A first mask having a through hole provided corresponding to a side surface portion on the end side is provided, and the first frequency adjusting means is provided with a through hole at a position corresponding to a predetermined portion of the excitation electrode. A second mask is provided, and the second frequency adjusting means is used by being overlapped with a container body on which the piezoelectric vibration element is mounted, and a through hole is provided at a position corresponding to a predetermined portion of the excitation electrode. A third mask is provided.

Further, according to such a frequency adjustment device for a piezoelectric vibrator, a side metal film can be easily provided on the side surface of the piezoelectric vibration element, and the frequency can be adjusted in the same device after the side metal film is formed. .
Therefore, the frequency of the piezoelectric vibration element can be easily adjusted even if the piezoelectric vibration element is downsized.

  Next, the best mode for carrying out the present invention (hereinafter referred to as “embodiment”) will be described in detail with reference to the drawings as appropriate. The piezoelectric vibration element will be described as a crystal vibration element. Moreover, in each embodiment, the same code | symbol is attached | subjected to the same component and the overlapping description is abbreviate | omitted.

(First embodiment)
1 (a) is a perspective view showing an example of a piezoelectric vibrating element used in the piezoelectric vibrator is a perspective view showing an example of (b) the container body. FIG. 2 is a conceptual diagram showing an example of a piezoelectric vibrator . FIG. 3 is a perspective view showing an example of a state in which excitation electrodes and routing patterns are provided on a quartz wafer. FIG. 4 is a conceptual diagram showing a state in which a conductive adhesive is applied to a mounting pad provided in a portion that becomes a container body of a wafer. FIG. 5 is a conceptual diagram showing a state in which a crystal resonator element is mounted. FIG. 6A is a conceptual diagram showing an example of a state in which a first mask is overlaid on a portion that becomes a container body of a wafer, and FIG. 6B is an enlarged view of a portion A of FIG. FIG. 7 is a conceptual diagram showing an example of a state in which the first mask is removed, and (b) is an enlarged view of a portion B in (a). FIG. 8 is a partial perspective view showing an example of a state in which a wafer on which a portion to be a container body is arranged and a wafer to be a lid are joined.

(Piezoelectric vibrator)
As shown in FIGS. 1 and 2, the piezoelectric vibrator 100 is mainly composed of a container body 10, a crystal vibration element 20 that is a piezoelectric vibration element, a lid body 30, a conductive adhesive D, and a side metal film K. ing.

As shown in FIG. 1B, the container body 10 has a square shape in plan view and has a recess 13 on one main surface, and a mounting pad 14 for mounting the crystal resonator element 20 in the recess 13. Are provided in pairs.
Specifically, when the surface of the container body 10 where the recess 13 is not provided is the bottom and the surface where the recess 13 is open is the top, the bottom surface of the recess 13 is adjacent along the short side of the four corners. One mounting pad 14 is formed on each of two matching corners to form a pair.

The mounting pad 14 is made of a metal film, and is electrically connected to an external terminal G provided on the lower surface 12 of the container body 10 through the inside of the container body 10. Note that the two mounting pads 14 are not electrically connected to each other.
Moreover, the metallized layer (not shown) is provided in the main surface 11 in which the recessed part 13 of the container body 10 is formed, and it can join with the sealing material (not shown) of the cover body 30 (refer FIG. 2). It is like that.

As shown in FIG. 2, the lid 30 serves to hermetically seal the concave portion 13 provided in the container body 10, and is joined to the container body 10 after the crystal resonator element 20 is mounted in the concave portion 13. . The lid body 30 has a quadrangular shape in plan view and is made of a metal material.
A sealing material (not shown) is provided on one main surface of the lid 30 and is joined to a metallized layer (not shown) provided on the container body 10.
It should be noted that the container 10 and the lid 30 may be bonded to each other depending on the material of the sealing material (not shown), but the sealing material such as seam welding, laser irradiation, or heat bonding with a halogen lamp may be used. Corresponding joining methods can be used.

As shown in FIG. 1A, the crystal resonator element 20 includes a crystal plate 21, an excitation electrode 22, and a routing pattern 23.
The quartz plate 21 has, for example, an AT-cut square shape in plan view, and excitation electrodes 22 are provided at predetermined positions on both main surfaces of the quartz plate 21. The excitation electrodes 22 are provided so as to face each other.

As shown in FIGS. 1A and 2, one routing pattern 23 is provided for each excitation electrode 22. The routing pattern 23 is provided so as to reach from the excitation electrode 22 to one corner 23A on one end side of the crystal plate 21, and is also provided at the corner 23B on the back side thereof, and the corners 23A, 23B. It is in a state of facing each other. However, the routing pattern 23 is not provided on the side surface of the crystal plate 21.
Therefore, the routing pattern 23 used with the same polarity is not electrically connected between the portion provided on one main surface side of the quartz plate 21 and the portion provided on the other main surface.

  Further, in the routing pattern 23 used in the same polarity, a portion provided on one main surface side of the crystal plate 21 and a portion provided on the other main surface are opposed to each other at the corners 23A and 23B. The two routing patterns 23 are provided so as to reach different corners. Thereby, when it joins to the container body 10 using the conductive adhesive D mentioned later, joining strength can be maintained similarly to the past.

Such a crystal resonator element 20 is manufactured by the following processes, for example.
A metal film forming process is performed in which a metal film is formed on both main surfaces of the quartz wafer by electrolytic plating, electroless plating, sputtering, and vapor deposition.
Next, a resist coating process is performed in which a resist is coated at positions corresponding to the excitation electrode and the routing pattern in correspondence with the outer shape of the quartz plate.
In this state, etching is performed to perform a metal film removing process for removing the exposed metal film not covered with the resist.
The remaining resist is removed to expose the metal film (see FIG. 3), and a resist removing process is performed to form an excitation electrode and a lead pattern.
In this state, the crystal resonator element 20 is obtained by being separated into individual crystal plates.
As can be seen from this step, the step of providing a part of the drawing pattern on the side surface of the quartz plate is unnecessary.

  As shown in FIG. 2, the conductive adhesive D is used when the mounting pad 14 of the container body 10 and the lead pattern 23 on the corner side of the crystal resonator element 20 are electrically and mechanically joined. The conductive adhesive D adheres to the lead pattern 23 provided on both principal surfaces of the crystal plate 21 of the crystal resonator element 20 while adhering to the mounting pad 14 of the container body 10, thereby crystal vibration. The state where the element 20 is bonded to the mounting pad 14 is maintained.

  The relationship of bonding between the conductive adhesive D and the crystal resonator element 20 will be described. Specifically, as shown in FIG. 2, the lead pattern 23 of the crystal resonator element 20 facing the bottom surface side of the recess 13 of the container body 10 and the mounting pad 14 of the container body 10 are joined by the conductive adhesive D. It becomes a state. Thereby, the routing pattern 23 of the crystal resonator element 20 facing the bottom surface side of the recess 13 of the container body 10 plays a role of maintaining the bonding strength.

The side metal film K is provided so as to be connected to the corners 23A and 23B of the crystal piece 21 of the routing pattern 23 used with the same polarity.
More specifically, the side metal film K is electrically connected to the lead pattern 23 connected to the excitation electrode 22 on the side not facing the surface on which the mounting pad 14 of the container body 10 is formed, and the lead metal film K is drawn. The rotation pattern 23 is provided on the side surface on the long side of the crystal piece 21 so as to be connected to the corners 23 </ b> A and 23 </ b> B of the crystal piece 21.
By providing the side surface metal film K in this way, it is possible to ensure a reliable energization state to the excitation electrode.
The side metal film K may be provided on the side surface of the crystal piece 21 so as to cover the conductive adhesive D and the mounting pad 14.

  As shown in FIG. 4, the conductive adhesive D is applied in the state of the wafer before the container body 10 is singulated, and in this state, as shown in FIG. It may be mounted on the body 10. Thereafter, as shown in FIGS. 6A and 6B, a first mask 521 (see FIG. 9) for providing the side metal film K is overlaid on the wafer before the container body 10 is separated into pieces. 7 (a) and 7 (b), the side metal film K is provided on the routing pattern 23. As shown in FIG. 8, the wafer on which the lid 30 is arranged is bonded to the wafer on which the crystal resonator element 20 is mounted to obtain a wafer on which the piezoelectric vibrator 100 is arranged. This wafer is cut into pieces by dicing or the like to obtain individual piezoelectric vibrators 100.

Thereby, since it is not necessary to provide a part of the drawing pattern 23 on the side surface of the crystal resonator element 20, the piezoelectric vibrator 100 can be easily manufactured.
In other words, the function as the piezoelectric vibrator 100 can be maintained without providing the lead pattern 23 to the side surface of the crystal plate 21 of the crystal resonator element 20. In addition, since a part of the routing pattern 23 is not provided on the side surface of the quartz plate 21, high-precision and complicated work such as masking, vapor deposition, and sputtering is eliminated, and workability is improved even if the quartz resonator element 20 is downsized. Can be improved.

(Frequency adjustment device)
FIG. 9 is a conceptual diagram illustrating an example of a frequency adjustment device according to an embodiment of the present invention.
In the piezoelectric vibrator 100 according to the first embodiment of the present invention, the frequency is adjusted so that the predetermined frequency is obtained after the side metal film K is provided. For the frequency adjustment, a frequency adjustment device 500 according to an embodiment of the present invention as shown in FIG. 9 is used.
The frequency adjustment device 500 is a device that can form the side surface metal film K and perform frequency adjustment twice.

As shown in FIG. 9, the frequency adjustment device 500 includes a preparation chamber 510, a side metal film formation chamber 520, a first frequency adjustment chamber 530, a second frequency adjustment chamber 540, and a take-out chamber 550 in a vacuum chamber that can be in a vacuum state. It is divided and constituted so that it may line up.
The frequency adjusting device 500 conveys the container body 10 on which the crystal resonator element 20 is mounted in the order of the preparation chamber 510, the side metal film forming chamber 520, the first frequency adjusting chamber 530, the second frequency adjusting chamber 540, and the take-out chamber 550. In order to do so, a transport means 560 is provided. In addition, gates G1 to G6 that can be opened and closed are provided between the preparation chamber 510, the side metal film forming chamber 520, the first frequency adjustment chamber 530, the second frequency adjustment chamber 540, and the take-out chamber 550, A vacuum state can be maintained in each chamber after the container body 10 is transported. In order to achieve this vacuum state, the frequency adjusting device 500 includes an exhaust unit (not shown), and each chamber can be individually in a vacuum state. The vacuum state includes a state where the pressure is reduced to a pressure of about 10 ⁻⁴ Pa, for example.
In the description of the frequency adjusting device 500, a case where a wafer on which a plurality of container bodies 10 are arranged will be described.

As shown in FIG. 9, the transport unit 560 includes, for example, a guide rail 561 and a tray 562.
The guide rail 561 is disposed so as to pass through the preparation chamber 510, the side metal film forming chamber 520, the first frequency adjustment chamber 530, the second frequency adjustment chamber 540, and the take-out chamber 550.
The tray 562 can be opened and closed on the guide rail 561 so that a wafer on which the container bodies 10 are arranged can be placed.

Further, a contact portion 570 is provided between the wafer and the tray 562.
The contact portion 570 includes a contact pin (not shown) so that the contact pin can come into contact with a measurement terminal or an external terminal provided at a position corresponding to the container body 10 of the wafer. . The contact portion 570 is provided so as to be connectable to a first measurement unit 523, a second measurement unit 533, and a third measurement unit 543, which will be described later, via a tray 562.

  The preparation chamber 510 is used when a wafer on which a plurality of container bodies 10 are arranged in an atmospheric pressure state is placed on the unloading means 560. The wafer is in a state where the crystal resonator element 20 is mounted in the recess 13 corresponding to each container body 10.

The side surface metal film forming chamber 520 is used when the side surface metal film K is provided on the side surface of the crystal resonator element 20 mounted on the wafer, as shown in FIG. The side metal film forming chamber 520 is provided with a first mask 521 having a through hole H and side metal film forming means 522.
The first mask 521 is a through hole provided corresponding to the side surface portion on the end side of the routing pattern 23 connected to the excitation electrode 22 that does not face the surface on which the mounting pad 14 of the container body 10 is provided. H.

  That is, the routing pattern 23 provided in the crystal resonator element 20 is provided on both main surfaces of the crystal piece 21 so as to be connected to the excitation electrode 22 and face each other at the corners on the end side of the crystal piece 21 as described above. It has been. Here, the crystal resonator element 20 is mounted on the container body 10 via the conductive adhesive D, but the lead pattern 23 is not provided on the side surface of the crystal piece 21.

The through-hole H of the first mask 521 has an excitation electrode 22 that does not face the surface on which the mounting pad 14 of the container body 10 is provided when the first mask 521 is overlaid on the wafer on which the container body 10 is arranged. The lead pattern 23 to be connected is provided so as to open at the corner position on the end side of the crystal piece 21 facing each other.
The first mask 521 is provided at a predetermined position in the side surface metal film forming chamber 520 and overlaps the wafer transferred from the preparation chamber 510.

The side metal film forming means 522 is provided at a position away from the first mask 521 by a predetermined distance, and the side metal film K is provided on the side surface of the crystal resonator element 20 through the through hole H of the first mask 521. Play a role.
For the side surface metal film forming means 522, a vapor deposition apparatus, a sputtering apparatus, or the like can be used.
Au (gold), Ag (silver), Al (aluminum), or the like can be used as the metal used in the side metal film forming means 522.

The side metal film forming means 522 is connected to the first control means 524 to which the first measuring means 523 is connected. Thereby, the contact pin of the contact portion 570 provided on the tray 562 is in contact with the external terminal provided on the portion of the wafer that becomes the container body 10 and is connected to the first measuring unit 523. Become. Therefore, the amount of metal used can be adjusted by the first control means 524 while the frequency of the crystal resonator element 20 is measured by the first measurement means 523.
The measured frequency value and the amount of metal used can be displayed on the first monitor 525.
Note that a measuring device such as a network analyzer can be used for the first measuring means 523.

  As shown in FIG. 9, the first frequency adjustment chamber 530 is used when adjusting the first frequency of the crystal resonator element 20 mounted on the wafer. The first frequency adjustment chamber 530 includes a second mask 531 and first frequency adjustment means 532.

The second mask 531 is provided with a through hole (not shown) at a position corresponding to a predetermined portion of the excitation electrode 22 of the crystal resonator element 20 mounted on the wafer.
The second mask 531 overlaps the wafer transferred from the side surface metal film forming chamber 520 by the transfer means.

The first frequency adjusting means 532 plays a role of cutting a part of the excitation electrode 22 of the crystal resonator element 20 to a predetermined frequency.
For the first frequency adjusting means 532, for example, an etching apparatus such as an ion gun that cuts the surface of the excitation electrode 22 made of a metal film from the through hole side of the second mask 531 can be used. The first frequency adjusting means 532 is connected to the second control means 534 to which the second measuring means 533 is connected. Thereby, when adjusting the frequency of the crystal resonator element 20, the contact pin of the contact portion 570 provided on the tray 562 is brought into contact with the external terminal provided on the portion that becomes the container body 10 of the wafer. In this state, the second measuring means 533 is connected. Therefore, the etching amount of the excitation electrode 22 can be adjusted by the second control means 534 while measuring the frequency of the crystal resonator element 20 by the second measuring means 533.
The measured frequency and etching amount can be displayed on the second monitor 535.

The first frequency adjustment can be used as a rough adjustment, for example.
The second measuring means 533 can be a measuring device such as a network analyzer.
In this way, the etching amount can be controlled and adjusted to have a predetermined frequency.

  As shown in FIG. 9, the second frequency adjustment chamber 540 is used when the second frequency adjustment of the crystal resonator element 20 mounted on the wafer is performed. The second frequency adjustment chamber 540 includes a third mask 541 and second frequency adjustment means 542.

The third mask 541 is provided with a through hole (not shown) at a position corresponding to a predetermined portion of the excitation electrode 22 of the crystal resonator element 20 mounted on the wafer.
The third mask 541 overlaps with the wafer transferred from the first frequency adjustment chamber 530 by the transfer means 560.

Similar to the first frequency adjusting unit 532, the second frequency adjusting unit 542 plays a role of cutting a part of the excitation electrode 22 of the crystal resonator element 20 to a predetermined frequency.
For the second frequency adjusting means 542, for example, an etching apparatus such as an ion gun that cuts the surface of the excitation electrode 22 made of a metal film from the through hole side of the third mask 541 can be used. The second frequency adjusting means 542 is connected to the second control means 544 to which the third measuring means 543 is connected. Thereby, when adjusting the frequency of the crystal resonator element 20, the contact pin of the contact portion 570 provided on the tray 562 is brought into contact with the external terminal provided on the portion that becomes the container body 10 of the wafer. In this state, the third measuring means 543 is connected. Therefore, the etching amount of the excitation electrode 22 can be adjusted by the third control unit 544 while measuring the frequency of the crystal resonator element 20 by the third measuring unit 543.
The measured frequency and etching amount can be displayed on the third monitor 545.

The second frequency adjustment can be used as a fine adjustment, for example.
The third measuring unit 543 can be a measuring device such as a network analyzer.
In this way, the etching amount can be controlled and adjusted to have a predetermined frequency.

  As shown in FIG. 9, the take-out chamber 550 is used when taking out the wafer transferred by the transfer means 560 from the second frequency adjustment chamber 540.

  In such a frequency adjusting device 500, first, the side metal film forming chamber 520, the first frequency adjusting chamber 530, the second frequency adjusting chamber 540, and the take-out chamber 550 are decompressed to a vacuum state by an exhaust device. At this time, the charging chamber 510 is in an atmospheric pressure state. After the wafer is placed on the tray 562 of the transfer means 560, the gate G1 is opened, and the tray 562 (hereinafter referred to as “tray”) of the transfer means 560 on which the wafer is placed is positioned in the preparation chamber 510.

Thereafter, the gate G1 is closed, and the pressure in the charging chamber 510 is reduced until the pressure becomes the same as that in the side metal film forming chamber 520.
The gate G2 that partitions the charging chamber 510 and the side metal film forming chamber 520 is opened to allow the charging chamber 510 and the side metal film forming chamber 520 to communicate with each other. In this state, the tray 562 is moved from the preparation chamber to the side metal film forming chamber 520. Thereafter, the opened gate G2 is closed to partition the preparation chamber 510 and the side metal film forming chamber 520.
The wafer moved to the side metal film forming chamber 520 is overlapped with the first mask 521. In this state, the side metal film forming means 522 provides the side metal film K at the corner on the end side of the crystal resonator element 20 mounted on the wafer.

Since the internal pressures of the side metal film forming chamber 520 and the first frequency adjusting chamber 530 are the same, the gate G3 that partitions the side metal film forming chamber 520 and the first frequency adjusting chamber 530 is opened to open the side metal film. The formation chamber 520 and the first frequency adjustment chamber 530 are communicated with each other. In this state, the tray 562 is moved from the side metal film formation chamber 520 to the first frequency adjustment chamber 530. Thereafter, the opened gate G3 is closed to partition the side metal film forming chamber 520 and the first frequency adjusting chamber 530. The wafer moved to the first frequency adjustment chamber 530 is overlapped with the second mask 531. In this state, the first frequency adjusting unit 532 etches the excitation electrode 22 of the crystal resonator element 20 mounted on the wafer until the predetermined frequency is reached.
When the predetermined frequency is reached, the frequency adjustment in the first frequency adjustment chamber 530 is finished.

Since the internal pressures of the first frequency adjustment chamber 530 and the second frequency adjustment chamber 540 are the same, the gate G4 that partitions the first frequency adjustment chamber 530 and the second frequency adjustment chamber 540 is opened, and the first frequency is adjusted. The adjustment chamber 430 and the second frequency adjustment chamber 540 are communicated. In this state, the tray 562 is moved from the first frequency adjustment chamber 530 to the second frequency adjustment chamber 540. Thereafter, the opened gate G4 is closed to partition the first frequency adjustment chamber 530 and the second frequency adjustment chamber 540. The wafer moved to the second frequency adjustment chamber 540 is overlapped with the third mask 541. In this state, the excitation electrode 22 of the crystal resonator element 20 mounted on the wafer is etched by the second frequency adjusting unit 542 until the predetermined frequency is reached.
When the predetermined frequency is reached, the frequency adjustment in the second frequency adjustment chamber 540 is terminated.

Since the internal pressures of the second frequency adjustment chamber 540 and the extraction chamber 550 are the same, the second frequency adjustment chamber 540 and the extraction chamber are opened by opening the gate G5 that partitions the second frequency adjustment chamber 540 and the extraction chamber 550. 550 is communicated. In this state, the tray 562 is moved from the second frequency adjustment chamber 540 to the take-out chamber 550. Thereafter, the opened gate G5 is closed to partition the second frequency adjustment chamber 540 and the take-out chamber 550.
In this state, the take-out chamber 550 is returned to atmospheric pressure, and the wafers placed on the tray 562 are taken out from the take-out chamber 550.

Thus, by configuring the frequency adjusting device 500, the electrical connection between the piezoelectric vibration element 20 and the container body 10 can be reliably ensured by the side metal film K, and the side metal film K is provided. In the state, the frequency adjustment can be performed immediately in parallel.
That is, an exchange operation for re-packing the container body 10 on which the crystal resonator element 20 is mounted with another jig is not required, and the workability is improved.
Therefore, even if the crystal resonator element 20 is downsized, the electrical connection between the crystal resonator element 20 and the container body 10 can be ensured, and the piezoelectric resonator element 20 can be easily performed without replacing the mask. Can be adjusted.

(Modification of the first embodiment)
Although not shown, such a piezoelectric vibrator 100 may be bonded to another container body on which an integrated circuit element or the like including an oscillation circuit is mounted as a piezoelectric oscillator, or may include an oscillation circuit using a lead frame. Alternatively, a piezoelectric oscillator in which integrated circuit elements are joined and the outer shape is adjusted with a mold resin may be used.

(Second embodiment)
FIG. 10A is a perspective view showing an example of a container body used in a piezoelectric oscillator , and FIG. 10B is a perspective view showing a state in which a piezoelectric vibration element and an integrated circuit element are mounted on the container body. ) Is a perspective view showing a piezoelectric oscillator .

(Piezoelectric oscillator)
As shown in FIG. 10, the piezoelectric oscillator 200 includes a container body 10A having at least two recesses 13A and 13B provided on the main surface, and a crystal resonator element 20 that is a piezoelectric resonator element mounted in one recess 13A. From the side metal film K provided on the side surface of the crystal resonator element 20, the lid 30 hermetically sealing the recesses 13A and 13B, and the integrated circuit element 40 including the oscillation circuit mounted in the other recess 13B. It is mainly composed.

The container body 10A used in the piezoelectric oscillator 200 is, for example, in the same plane, provided with two concave portions 13A and 13B on one main surface, and an external terminal (not shown) on the other main surface. The structure is provided.
Of the two recesses 13A and 13B, one recess 13A is provided with a mounting pad 14A for mounting the crystal resonator element 20, and the other recess 13B is mounted with an integrated circuit element 40 having an oscillation circuit. An IC pad 14B is provided. The mounting pad 14A is electrically connected to a predetermined portion of the IC pad 14B. A predetermined portion of the IC pad 14B is connected to a predetermined external terminal so that a voltage can be applied from a mounting board (not shown).

  Also in such a container body 10A, a crystal resonator element 20 similar to the piezoelectric resonator element 20 used in the piezoelectric vibrator 100 according to the first embodiment is used. As described above, the lead pattern 23 of the crystal resonator element 20 is formed only on both main surfaces of the crystal resonator element 20 and is not provided on the side surface. The crystal resonator element 20 is connected to a mounting pad 14A provided in one concave portion 13A of the container body 10A and an excitation electrode 22 of the crystal resonator element 20, and electrically conducts a routing pattern 23 facing the mount pad 14A. Used by bonding with an adhesive material D.

The side metal film K is provided so as to be connected to the corners 23A and 23B of the crystal piece 21 of the routing pattern 23 used with the same polarity.
More specifically, the side surface metal film K is electrically connected to the routing pattern 23 connected to the excitation electrode 22 on the side not facing the surface on which the mounting pad 14A of the container body 10 is formed, and the side surface metal film K is drawn. The rotation pattern 23 is provided on the side surface on the long side of the crystal piece 21 so as to be connected to the corners 23 </ b> A and 23 </ b> B of the crystal piece 21.
By providing the side surface metal film K in this manner, a reliable energization state to the excitation electrode 22 can be ensured.
The side metal film K may be provided on the side surface of the crystal piece 21 so as to cover the conductive adhesive D and the mounting pad 14A.

  Thereby, even if the crystal resonator element 20 is reduced in size, electrical connection with the container body 10A can be reliably ensured.

(Frequency adjustment device)
For such a piezoelectric oscillator 200, the frequency adjusting device 500 according to the embodiment of the present invention shown in FIG. 9 can be used.
For example, the frequency of the crystal resonator element 20 can be adjusted by overlaying a mask so as to close the other concave portion 13B of the container body 10A on which the integrated circuit element 40 is not mounted.
In this case, the contact pin (not shown) is brought into contact with a measurement terminal (not shown) provided on the container body 10A. The measurement terminal may be provided on the same surface as the surface on which the external terminal of the container body 10A is provided, or may be provided on the side surface of the container body 10A.
In addition, when the measurement terminal is provided on the side surface of the container body 10A, the contact pin comes into contact from a direction perpendicular to the side surface.
Even if comprised in this way, there exists an effect similar to 1st embodiment.

(Modification of the second embodiment)
Although not shown, such a piezoelectric oscillator 200 can also be applied to an oscillator having a structure in which the side surface of the concave portion provided in the container body is formed in a step shape. For example, an integrated circuit element having an oscillation circuit may be mounted at the lowest position in the recess, and the crystal resonator element 20 may be mounted on the stepped portion of the stepped side surface. That is, a container body having a structure in which a recess is provided in the recess can be used.

(Third embodiment)
FIG. 11 is a cross-sectional view showing an example of a piezoelectric oscillator .

(Piezoelectric oscillator)
As shown in FIG. 11, the piezoelectric oscillator 201 includes a container body 10B provided with recesses 13C and 13D on both main surfaces, a crystal resonator element 20 which is a piezoelectric resonator element mounted in one recess 13C, It mainly comprises a lid 30 that hermetically seals the recess 13C, and an integrated circuit element 40 that includes an oscillation circuit mounted in the other recess 13D.

  Also in such a container body 10B, a crystal resonator element 20 similar to the piezoelectric resonator element 20 used in the piezoelectric vibrator 100 according to the first embodiment is used. As described above, the lead pattern 23 of the crystal resonator element 20 is formed only on both main surfaces of the crystal resonator element 20 and is not provided on the side surface. The crystal resonator element 20 is connected to a mounting pad 14C provided in one concave portion 13C of the container body 10B and an excitation electrode 22 of the crystal resonator element 20, and a lead pattern 23 facing the mount pad 14C is electrically conductive. Used by bonding with an adhesive material D.

The side metal film K is provided so as to be connected to the corners 23A and 23B of the crystal piece 21 of the routing pattern 23 used with the same polarity.
More specifically, the side surface metal film K is electrically connected to the routing pattern 23 connected to the excitation electrode 22 on the side not facing the surface on which the mounting pad 14C of the container body 10 is formed, and the side surface metal film K is drawn. The rotation pattern 23 is provided on the side surface on the long side of the crystal piece 21 so as to be connected to the corners 23 </ b> A and 23 </ b> B of the crystal piece 21.
By providing the side surface metal film K in this manner, a reliable energization state to the excitation electrode 22 can be ensured.
The side metal film K may be provided on the side surface of the crystal piece 21 so as to cover the conductive adhesive D and the mounting pad 14C.

  Thereby, even if the crystal resonator element 20 is reduced in size, electrical connection with the container body 10B can be ensured reliably.

(Frequency adjustment device)
For such a piezoelectric oscillator 201, the frequency adjusting device 500 according to the embodiment of the present invention shown in FIG. 9 can be used.
For example, a container 10B provided with a measurement terminal (not shown) in the other recess 13D is used. A mask is overlaid on one concave portion 13C of the container body 10B, and frequency adjustment can be performed using a measurement terminal (not shown) in the other concave portion 13D before the integrated circuit element 40 is mounted.
In this case, the contact pin (not shown) is brought into contact with a measurement terminal (not shown) provided on the container body 10A. Therefore, the contact pin has a structure that can protrude by the depth of the other recess 13D.
Even if comprised in this way, there exists an effect similar to 1st embodiment.

As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment. For example, a piezoelectric material such as ceramic can be used as the piezoelectric vibration element. In addition, the piezoelectric vibration element may have a tuning fork shape, a shape in which a portion to be excited and vibrated is recessed or a shape in which the thickness is increased, and the edge portion is beveled or a plano convex It may have a shape that has undergone processing or biconvex processing.
For joining the container body and the lid body, a joining method other than the above-described method can be used. For example, when the material of the container body and the lid body is the same material, when glass is used as an example, the container body and the lid body may be joined by direct joining, or either the container body or the lid body Alternatively, a bonding film made of aluminum may be provided and bonded by anodic bonding.
The excitation electrode and the routing pattern may be a metal film, and a conventionally known metal material can be used. For example, a structure in which Ti, Cr, or the like is used for the base and Au or the like is provided on the base may be used.
Furthermore, a piezoelectric vibrator or a piezoelectric oscillator having a structure in which a piezoelectric vibration element is mounted on a flat base and hermetically sealed with a lid having a recess may be used.

(A) is a perspective view showing an example of a piezoelectric vibrating element used in the piezoelectric vibrator is a perspective view showing an example of (b) the container body. It is a conceptual diagram which shows an example of a piezoelectric vibrator . It is a perspective view which shows an example of the state which provided the excitation electrode and the routing pattern in the quartz wafer. It is a conceptual diagram which shows the state which apply | coated the electrically conductive adhesive to the mounting pad provided in the part used as the container body of a wafer. It is a conceptual diagram which shows the state which mounts the crystal vibration element. (A) is a conceptual diagram which shows an example of the state which accumulated the 1st mask on the part used as the container body of a wafer, (b) is the A section enlarged view of (a). It is a conceptual diagram which shows an example of the state which removed the 1st mask, (b) is the B section enlarged view of (a). It is a fragmentary perspective view which shows an example of the state which joined the wafer in which the part used as a container body was arranged, and the wafer used as a cover body. It is a conceptual diagram which shows an example of the frequency adjustment apparatus which concerns on embodiment of this invention. (A) is a perspective view which shows an example of the container used for a piezoelectric oscillator , (b) is a perspective view which shows the state which mounted the piezoelectric vibration element and the integrated circuit element in the container, (c) is It is a perspective view which shows a piezoelectric oscillator . It is sectional drawing which shows an example of a piezoelectric oscillator .

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Piezoelectric vibrator 200, 201 Piezoelectric oscillator 10, 10A, 10B Container body 13, 13A, 13B, 13C, 13D Recessed part 14, 14A, 14C Mounting pad 14B, 14D IC pad 20 Crystal vibrating element (piezoelectric vibrating element)
DESCRIPTION OF SYMBOLS 21 Quartz plate 22 Excitation electrode 23 Leading pattern 30 Cover body 40 Integrated circuit element 500 Frequency adjustment device 520 Metal film formation chamber 521 1st mask 522 Side metal film formation means 530 1st frequency adjustment chamber 531 2nd mask 532 1st frequency Adjustment means 540 Second frequency adjustment chamber 541 Third mask 542 Second frequency adjustment means D Conductive adhesive K Side surface metal film H Through hole

Claims (2)

A side metal film forming chamber provided with side metal film forming means for providing a side metal film on a side surface of the piezoelectric vibration element mounted on the container body;
A first frequency adjusting chamber provided with first frequency adjusting means for adjusting the frequency of the piezoelectric vibration element;
A second frequency adjusting chamber provided with second frequency adjusting means for further adjusting the frequency of the piezoelectric vibration element;
A frequency adjusting apparatus comprising: a transfer means for transferring the container body on which the piezoelectric vibration element is mounted in order from the side metal film forming chamber, the first frequency adjusting chamber, and the second frequency adjusting chamber. The side metal film forming means is used by being superposed on a container body on which the piezoelectric vibration element is mounted, and is connected to an excitation electrode that does not face the surface on which the mounting pad of the container body is provided. A first mask having a through hole provided corresponding to a side surface portion on the end side of the pattern is provided,
The first frequency adjusting means includes a second mask provided with a through hole at a position corresponding to a predetermined portion of the excitation electrode,
The second frequency adjusting means includes a third mask that is used in an overlapping manner with the container body on which the piezoelectric vibration element is mounted and has a through hole provided at a position corresponding to a predetermined portion of the excitation electrode. The frequency adjusting device according to claim 5, wherein

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