JP5163680B2 - Display device - Google Patents

Description

  The present invention relates to a display device having a built-in touch panel using an optical sensor.

  An optical sensor using a thin film transistor (TFT) detects a photocurrent signal (drain current) generated by light incident on the TFT in a state where a predetermined potential (usually a negative potential) is applied to the gate. . In recent years, various proposals have been made on display devices in which a touch sensor using such an optical sensor is incorporated in a display panel (for example, Patent Document 1). In a conventional touch panel built-in display device such as Patent Document 1, one photosensor is arranged corresponding to one display pixel.

JP 2006-317682 A

  Here, when one photosensor is arranged for one display pixel as in Patent Document 1, the amount of decrease in the aperture ratio per display pixel increases. On the other hand, when the optical sensors are arranged sparsely, there is a concern that the detection accuracy as a touch panel is lowered.

  The present invention has been made in view of the above circumstances, and a display in which an optical sensor is incorporated so as to suppress a decrease in aperture ratio per display pixel while suppressing a decrease in detection accuracy as a touch panel. An object is to provide an apparatus.

In order to achieve the above object, a display device according to a first aspect of the present invention includes a plurality of signal lines arranged in a row direction, a plurality of scanning lines arranged in a column direction, and the signal lines. A plurality of display pixels having optical elements connected to the respective scanning lines and arranged in the vicinity of intersections of the respective signal lines and the respective scanning lines and arranged between the display pixels. A plurality of thin film transistor photosensors that are two-dimensionally arranged and output a photocurrent signal corresponding to the amount of incident light, the number of which is smaller than the number of display pixels, and the thin film transistor photosensors arranged in the row direction. A plurality of sensor gate lines connected in common in the row direction and a drain electrode of each thin film transistor photosensor arranged in the column direction, and arranged in the column direction. Multiple sensor drain lines A plurality of sensor source lines connected in common to the source electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction, and the display pixels arranged in two adjacent rows A plurality of arrangement regions sandwiched and extending in the row direction, wherein each of the scanning lines and each of the sensor gate lines are different from each other via each of the display pixels arranged in at least one row. A plurality of arrangement regions arranged in a region, and the plurality of display pixels are composed of two display pixels arranged adjacent to each other in a column direction, The display pixels are paired, the scanning lines are arranged in the arrangement region between the display pixel pairs adjacent in the column direction, and the sensor gate lines are arranged in the row direction. Sandwiched between a pair of the two display pixels Disposed in serial arrangement region, wherein the plurality of thin film transistors photosensor, the area between the respective display pixel pairs adjacent to each other in the row direction, characterized in that provided adjacent to the respective display pixels pairs .
In order to achieve the above object, a display device according to a second aspect of the present invention includes a plurality of signal lines arranged in a row direction, a plurality of scanning lines arranged in a column direction, and each of the signal lines. A plurality of display pixels having optical elements connected to the respective scanning lines and arranged in the vicinity of intersections of the respective signal lines and the respective scanning lines and arranged between the display pixels. A plurality of thin film transistor photosensors that are two-dimensionally arranged and output a photocurrent signal corresponding to the amount of incident light, the number of which is smaller than the number of display pixels, and the thin film transistor photosensors arranged in the row direction. A plurality of sensor gate lines connected in common in the row direction and a drain electrode of each thin film transistor photosensor arranged in the column direction, and arranged in the column direction. Multiple sensor drain lines A plurality of sensor source lines connected in common to the source electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction, and the display pixels arranged in two adjacent columns A plurality of arrangement regions that are sandwiched and extend in the column direction, and each of the signal lines, the sensor drain lines, and the sensor source lines are interposed through the display pixels arranged in at least one column. The plurality of arrangement areas arranged in the different arrangement areas, and the plurality of display pixels are composed of an even number of the display pixels arranged adjacent to each other in the row direction. A plurality of display pixel pairs arranged in a dimension are formed, and the signal lines are arranged in the arrangement region between the display pixel pairs adjacent in the row direction, and the sensor drain lines and the sensor source lines. Is the column Each thin film transistor photosensor disposed in the arrangement region sandwiched between the display pixels at a position obtained by equally dividing the even number of display pixels in the row direction of the display pixel pairs arranged in the direction Is provided in a region sandwiched between the display pixels at a position obtained by dividing the even number of display pixels into two in the row direction.
In order to achieve the above object, a display device according to a third aspect of the present invention includes a plurality of signal lines arranged in a row direction, a plurality of scanning lines arranged in a column direction, and each of the signal lines. A plurality of display pixels having optical elements connected to the respective scanning lines and arranged in the vicinity of intersections of the respective signal lines and the respective scanning lines and arranged between the display pixels. A plurality of thin film transistor photosensors that are two-dimensionally arranged and output a photocurrent signal corresponding to the amount of incident light, the number of which is smaller than the number of display pixels, and the thin film transistor photosensors arranged in the row direction. A plurality of sensor gate lines connected in common in the row direction and a drain electrode of each thin film transistor photosensor arranged in the column direction, and arranged in the column direction. Multiple sensor drain lines A plurality of sensor source lines connected in common to the source electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction; and (1) the respective source lines arranged in two adjacent rows. A plurality of first regions sandwiched between display pixels and extending in the row direction, wherein each of the scanning lines and each of the sensor gate lines is interposed through each of the display pixels arranged in at least one row. A plurality of first regions arranged in the first regions different from each other; and (2) a plurality of first regions sandwiched between the display pixels arranged in two adjacent columns and extending in the column direction. Each of the signal lines, the sensor drain lines, and the sensor source lines are different from each other in the second regions through the display pixels arranged in at least one column. (1) of the plurality of second regions disposed; Or at least one of (2), and the plurality of display pixels includes a plurality of the display pixels arranged in a predetermined number of adjacent columns forming two adjacent rows and an even number, A plurality of display pixel pairs arranged two-dimensionally, and each signal line is disposed in the second region between each display pixel pair adjacent in the row direction, and each sensor drain line and each each A sensor source line is arranged in the first region sandwiched between the display pixels at a position obtained by dividing the predetermined number of columns into two equal parts in the row direction of the display pixel pairs arranged in the column direction. Each of the thin film transistor photosensors is provided in a region sandwiched between the two rows of display pixels at a position obtained by dividing the predetermined number of columns into two equal parts. .

  ADVANTAGE OF THE INVENTION According to this invention, it is possible to suppress the fall of the aperture ratio per display pixel at the time of incorporating an optical sensor in a display apparatus.

It is a figure which shows the cross-section of the display panel of the liquid crystal display device as an example of the display apparatus which concerns on the 1st Embodiment of this invention. It is a figure which shows the structure of TFT sensor T0. It is a figure which shows the structure of TFT sensor T1. It is a front view of the display panel of the liquid crystal display device in the 1st Embodiment of this invention. It is the figure shown about the layout of the gate line in the 1st Embodiment of this invention, a sensor gate line, and a capacitance line. It is a front view of the display panel of this embodiment in the state where the light shielding film was formed. It is the figure which showed the outline | summary of area division. It is a figure which shows the detailed circuit structure of the part of A of FIG. It is a circuit diagram which shows an example of a structure of a sensor driver. It is a figure which shows the optical-current characteristic of a-Si TFT. It is a figure which shows the modification when a light-shielding wall is provided on a color filter substrate. It is a circuit diagram which shows the structure of the modification of a sensor driver. It is a figure which shows the cross-section of the display panel of the organic electroluminescence display which integrated the optical sensor apparatus which concerns on the 1st Embodiment of this invention as a touch sensor. It is the figure which showed the circuit structure of a part of division area of an organic electroluminescence display. It is a front view of the display panel of the liquid crystal display device in the 2nd Embodiment of this invention. It is the figure shown about the layout of the gate line in the 2nd Embodiment of this invention, a sensor gate line, and a capacitance line. It is a front view of the display panel of the liquid crystal display device in the 3rd Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[First Embodiment]
First, a first embodiment of the present invention will be described. FIG. 1 is a diagram showing a cross-sectional structure of a display panel 10 of a liquid crystal display device as an example of a display device according to a first embodiment of the present invention. FIG. 2 is a diagram showing a configuration of the TFT sensor T0 provided in the display panel 10. As shown in FIG. FIG. 3 is a diagram showing a configuration of the TFT sensor T1 provided in the display panel 10. As shown in FIG. FIG. 4 is a front view of the display panel 10 of the liquid crystal display device. FIG. 1 shows a cross section viewed by cutting along the AA direction shown in FIG.

  A display panel 10 of the liquid crystal display device shown in FIG. 1 is configured by sealing a liquid crystal 103 between a TFT substrate 101 and a color filter substrate 102. Further, a backlight 104 as a light source is provided on the back surface of the TFT substrate 101, and white light can be irradiated from the back surface of the TFT substrate 101.

  The TFT substrate 101 as the first substrate is made of a transparent substrate such as a glass substrate, and a plurality of TFT sensors T0 and T1 and a plurality of pixel TFTs T2 forming a plurality of thin film transistor photosensors are provided on the TFT substrate 101. A plurality of gate lines (scanning lines) 111, a plurality of drain lines (signal lines) 112, a plurality of sensor gate lines 121, a plurality of sensor drain lines 122, and a plurality of sensor source lines 123 are formed. Note that when viewed in the AA cross section, the pixel TFT T2 is not visible in FIG. 1, and only the drain line 112 is visible. Each drain line 112 is connected to the drain electrode of T2, but also substantially forms a drain electrode of the pixel TFT T2. Therefore, in the following description, the drain line 112 is also referred to as the drain electrode of the pixel TFT T2. I will say. Further, as shown in FIG. 4, each gate line 111 is connected to the gate electrode of T2. However, since it also substantially forms the gate electrode of the pixel TFT T2, the gate line 111 will be described below. Is also referred to as the gate electrode of the pixel TFT T2.

  The thin film transistor photosensor includes a first thin film transistor photosensor and a second thin film transistor photosensor. As shown in FIG. 2, the TFT sensor T0 as the first thin film transistor photosensor includes a gate electrode 121, a drain electrode 122, a source electrode 123, and a photoelectric conversion composed of a semiconductor layer made of an amorphous silicon (a-Si) film. Part 124 and a channel protective film 127 made of a transparent insulating film. The gate electrode 121 of the TFT sensor T0 is formed to have a length corresponding to the length in the column direction of two display pixels (sub-pixels) arranged in the column direction as shown in FIG. The gate electrode 121 is extended along the row direction of the display panel 10 so as to constitute a sensor gate line, and is connected to a gate terminal of a sensor driver described later. Further, the drain electrode 122 and the source electrode 123 of the TFT sensor T0 are extended along the column direction of the display panel 10 so as to constitute the sensor drain line 122 and the sensor source line 123, respectively. Each terminal is connected.

  Further, a light shielding wall 125 made of a light shielding material such as metal or resin is formed at a position covering the photoelectric conversion portion 124 of the TFT sensor T0. Further, each electrode of the TFT sensor T0 and the photoelectric conversion unit 124 are insulated by an insulating film 105 having transparency.

  As shown in FIG. 2, in the TFT sensor T0 having such a configuration, since the photoelectric conversion unit 124 is shielded by the light shielding wall 125, the light from the backlight 104 is converted into the photoelectric conversion unit of the TFT sensor T0. 124 does not enter. In this case, the TFT sensor T0 always outputs a photocurrent signal (drain current) corresponding to the dark current even when it is in the selected state.

  As shown in FIG. 3A, the TFT sensor T1 as the second thin film transistor optical sensor includes a photoelectric conversion unit including a gate electrode 121, a drain electrode 122, a source electrode 123, and a semiconductor layer made of an a-Si film. 124 and a channel protective film 127 made of a transparent insulating film. The gate electrode 121 of the TFT sensor T1 has a column direction length corresponding to the column direction length of the display pixel pair formed by two display pixels (sub-pixels) arranged in the column direction as shown in FIG. Is formed. The gate electrode 121 is extended so as to constitute a sensor gate line 121 and connected to a gate terminal of a sensor driver described later. In addition, the drain electrode 122 and the source electrode 123 of the TFT sensor T1 are formed to extend along the column direction of the display panel 10 so as to constitute the sensor drain line 122 and the sensor source line 123, respectively. Connected to the source terminal.

  A light shielding wall 126 made of a light shielding material such as metal or resin is formed so as to surround the photoelectric conversion portion 124 of the TFT sensor T1. The light shielding wall 126 has a height (length in the vertical direction in the drawing perpendicular to the substrate surface of the TFT substrate 101) so as to form a predetermined gap (referred to as a light valve) with the color filter substrate 102. Has been determined. Further, each electrode of the TFT sensor T1 and the photoelectric conversion unit 124 are insulated by the insulating film 105 having transparency.

  As shown in FIG. 3A, the TFT sensor T1 having such a configuration is in a state where the light valve is opened while the color filter substrate 102 is not pressed by an external force by a user's finger or the like. In this state, the photoelectric conversion unit 124 of the TFT sensor T1 is exposed through the channel protective film 127, and light emitted from the backlight 104 enters the photoelectric conversion unit 124 of the TFT sensor T1 through the light valve. Therefore, the TFT sensor T1 outputs a drain current corresponding to the illuminance of incident light when it is in a selected state. On the other hand, when a pressing pressure is applied to the color filter substrate 102 by an external force from the user's finger or the like, as shown in FIG. 3B, a part of the color filter substrate 102 is deformed to close the light valve. (There is no gap between the color filter substrate 102 and the light shielding wall 126). In this state, the photoelectric conversion unit 124 of the TFT sensor T1 is in a light shielding state, and the TFT sensor T1 outputs a drain current corresponding to a dark current.

  Although not shown in FIG. 1, the side of the color filter substrate 102 facing the TFT substrate 101 so that the light emitted from the backlight 104 is efficiently incident on the photoelectric conversion unit 124 of the TFT sensor T1. It is desirable to form a reflective film 128 such as an aluminum thin film on the surface so as to face the photoelectric conversion portion 124 of the TFT sensor T1.

  The pixel TFT T2 includes a gate electrode 111, a drain electrode 112, and a source electrode 113. The gate electrode 111 of the pixel TFT T2 is extended so as to constitute the gate line (pixel selection line) 111 of the display panel 10 shown in FIG. Further, the drain electrode 112 is extended to be orthogonal to the gate line 111 so as to form a drain line (data input line) 112. These gate lines 111 and drain lines 112 are connected to a display driver (not shown). Further, the source electrode 113 is connected to the pixel electrode 114.

  The color filter substrate 102 as the second substrate is made of a transparent substrate such as a glass substrate, and the color filter substrate 102 has red (R), green (G), A color filter 141 having any color of blue (B) is formed. Further, a light shielding film 142 is formed so as to surround the color filter 141, and this light shielding film 142 functions as a black matrix. Further, a common electrode 143 made of a transparent electrode such as an ITO (indium tin oxide) film is formed on the color filter 141. A common voltage having a predetermined potential level is applied to the common electrode 143. A liquid crystal display element as an optical element is formed by the pixel electrode 114, the common electrode 143, and the liquid crystal sandwiched between the pixel electrode 114 and the common electrode 143.

  Although not shown in FIG. 1, the TFT substrate 101 and the color filter substrate 102 are bonded by a sealing member, and the liquid crystal 103 is sealed by the sealing member.

  In FIG. 4, the sub-pixels corresponding to the R, G, and B colors of the display panel 10 are each formed with a set of a pixel TFT T2 and a pixel electrode 114. One display pixel is constituted by three sub-pixels corresponding to the respective colors of R, G, and B. Further, the TFT sensor T0 (shown in a state hidden by the light shielding wall 125 in FIG. 4) and the TFT sensor T1 are alternately arranged in the row direction corresponding to the display pixels arranged two-dimensionally in this way. ing.

  Further, a capacitor line 151 is routed on the lower surface side (the back surface side of the drawing) of the pixel electrode 114, and a voltage having the same level as the common voltage applied to the common electrode 143 is applied to the capacitor line 151. Yes. The capacitor line 151 and the pixel electrode 114 form a storage capacitor corresponding to each subpixel.

  Here, in the present embodiment, in order to increase the aperture ratio, one TFT sensor is disposed so as to be adjacent to a display pixel pair including two display pixels adjacent in the column direction. Further, the length in the column direction of the single TFT sensor is made to coincide with the column direction length of the display pixel pair so as not to reduce the resolution as a sensor. In this embodiment, in order to arrange the TFT sensor in this manner, the pixel TFT T2 and the gate line 111 are connected to each other in a mirror image relationship for each display pixel pair. That is, as shown in FIG. 4, for every two rows of display pixels arranged at equal intervals in the column direction, the gate lines 111 are arranged along the row direction of the display panel 10 so as to sandwich the two rows of display pixels. . When the display panel 10 is viewed from the front, the upper side of the gate line 111 arranged adjacent to the display pixel which is the upper side (the left side direction is the upper side in the drawing) of the display pixels in each of the two rows. Connected to the display pixel through the pixel TFT T2, and the gate line 111 arranged adjacent to the lower display pixel of the display pixels in each of the two rows is displayed from the lower side through the pixel TFT T2. Connect to the pixel. Further, by arranging the gate line 111 as shown in FIG. 4, the sensor gate line 121 is arranged in an empty area generated between the two rows of display pixels.

  FIG. 5 is a diagram showing the layout of the gate line 111, the sensor gate line 121, and the capacitor line 151. All of these wirings are formed on the same layer of the TFT substrate 101. As described above, the gate line 111 is arranged in a region sandwiching the display pixels of the two rows every two rows of the display pixels. That is, the gate line 111 has an upper position of the display pixel in the first row, a lower position of the display pixel in the second row, an upper position of the display pixel in the third row, and a lower position of the display pixel in the fourth row,. , (N−1) rows of display pixels, and N rows of display pixels, respectively. In addition, the sensor gate line 121 is arranged at a position between each two rows of display pixels for every two rows of display pixels. That is, the sensor gate line 121 is positioned between the display pixel in the first row and the display pixel in the second row, the position between the display pixel in the third row and the display pixel in the fourth row, (N−1). ) The pixel is arranged at a position between the display pixel in the row and the display pixel in the Nth row. Further, as described above, the sensor gate line 121 also serves as a gate electrode of the TFT sensor, and extends in the column direction so as to be adjacent to each display pixel pair.

  Further, in the present embodiment, as shown in FIG. 5, the capacitor line 151 is also arranged so as to have a mirror image relationship for each display pixel pair. That is, as shown in FIG. 5, the capacitor line 151 is routed so as to sandwich the sensor gate line 121 and to face the outer peripheral portion of each display pixel with respect to one display pixel pair.

  By disposing the gate line 111, the sensor gate line 121, and the capacitor line 151 as described above, none of the gate line 111, the sensor gate line 121, and the capacitor line 151 cross each other (being conductive). Absent). Further, it is possible to drive two TFT light receiving areas corresponding to one display pixel pair by one sensor gate line 121. In this way, the number of sensor gate lines 121 can be reduced by half compared to the case where one TFT sensor is provided corresponding to one display pixel. It is possible to improve the aperture ratio.

  Further, since the gate line 111 and the sensor gate line 121 are not disposed close to each other, interference between the signal voltage applied to the gate line 111 and the signal voltage applied to the sensor gate line 121 occurs. Can not be. Thus, the display state of each display pixel can be prevented from being affected by driving of the thin film transistor photosensor, and detection of the user's contact position by the thin film transistor photosensor is not affected by driving of each display pixel. Can be.

  FIG. 6 is a front view of the display panel 10 of the present embodiment in a state where the light shielding film 142 is formed on the color filter substrate 102. As described above, the TFT sensor of this embodiment is a sensor that detects the reflected light of the backlight 104 in the plane of the display panel 10. That is, since it is not necessary to make external light incident on the TFT sensor, the TFT sensor portion can be completely covered with the light shielding film 142. For this reason, when the display panel 10 is observed, the periodic structure other than the display pixels is not visually recognized. If the periodic structure other than the display pixels is visually recognized, the image quality is adversely affected. In the present embodiment, such an adverse effect on the image quality can also be suppressed.

  Furthermore, in the present embodiment, the display area of the display panel 10 (area in which the pixel electrodes are arranged) is divided into a plurality of areas, and it is possible to determine the presence or absence of contact with the user's finger or the like for each divided area. FIG. 7 is a diagram showing an outline of this area division. FIG. 7 shows an example in which the display area of the display panel 10 (the area indicated by the broken line in the figure) is divided into 7 in the row direction and 5 in the column direction. Each divided area (divided area) 11 shown in FIG. 7 is an area about the size of a human finger, and is a square area with one side of about 5 mm. In each divided area 11, a plurality of display pixels as shown in FIG. 4 are arranged, and further, adjacent to both sides of each display pixel pair, that is, alternately along the row direction of the display panel 10. A pair (sensor pair) of the TFT sensor T0 and the TFT sensor T1 is disposed. When the TFT sensor T0 and the TFT sensor T1 are arranged in this way, it can be considered that the TFT sensor T0 and the TFT sensor T1 are arranged at substantially the same position as one sensor pair. In this case, it can be considered that the TFT sensor T0 and the TFT sensor T1 have substantially the same element temperature.

  In the present embodiment, among the divided areas 11 shown in FIG. 7, the divided areas 11 arranged in the same row (in the horizontal direction in the figure) are connected to the sensor driver 20 by sharing a sensor gate line outside the display area. In addition, among the divided areas 11 shown in FIG. 7, for the divided areas 11 arranged in the same column (in the vertical direction in the drawing), the sensor drain line and the sensor source line are shared by the sensor driver 20 outside the display area. Connecting. The sensor gate line, sensor drain line, and sensor source line are preferably shared outside the display area. This is because if the sensor gate line, sensor drain line, and sensor source line are made common within the display area, the wiring becomes complicated and the image displayed on the display panel 10 may be adversely affected. is there.

  As will be described later, in this embodiment, the sensor pairs of the TFT sensor T0 and the TFT sensor T1 in one divided area 11 are driven simultaneously. For this reason, it is not necessary to divide the sensor gate line between the TFT sensor T0 and the TFT sensor T1 in one division area 11. Therefore, the sensor driver 20 may be provided with gate terminals (G1 to G5 shown in FIG. 7) corresponding to the number of rows in the divided area. On the other hand, it is necessary to separate the sensor drain line between the TFT sensor T0 and the TFT sensor T1. Accordingly, the sensor driver 20 includes the drain terminals (D1-0 to D7-0 shown in FIG. 7) for the TFT sensor T0 corresponding to the number of columns in the divided area and the TFT sensors T1 corresponding to the number of columns in the divided area. It is necessary to provide drain terminals (D1-1 to D7-1 shown in FIG. 7), respectively. Further, the sensor driver 20 is provided with a source terminal for the TFT sensor T0 and the TFT sensor T1 separately. By providing the terminals in the sensor driver 20 in this way, the drain current output from each divided area 11 can be increased, and the number of terminals of the sensor driver 20 can be reduced.

  FIG. 8 shows a detailed circuit configuration of a portion A in FIG. As shown in FIG. 8, the sensor gate lines 121 of the TFT sensors T0 and T1 arranged in the same row are shared, and a plurality of the shared sensor gate lines 121 are shared outside the display area. Are connected to the common gate line GL5, and the common gate line GL5 is connected to the gate terminal G5 of the sensor driver 20. In addition, the sensor drain lines 122 of the TFT sensors T0 arranged in the same column are shared, and a plurality of the shared sensor drain lines 122 are shared outside the display area. The common drain line DL70 is connected to the drain terminal D7-0 of the sensor driver 20. Similarly, the sensor drain lines 122 of the TFT sensors T1 arranged in the same column are shared, and a plurality of the shared sensor drain lines 122 are shared outside the display area so that the common drain lines (first 2 sensor drain line) DL71, and the common drain line DL71 is connected to the drain terminal D7-1 of the sensor driver 20. In addition, the sensor source lines 123 of the TFT sensors T0 arranged in the same column are shared, and a plurality of the shared sensor source lines 123 are shared outside the display area so that the common source line (first Sensor source line) SL70, and the common source line SL70 is connected to the source terminal S7-0 of the sensor driver 20. Further, the sensor source lines 123 of the TFT sensors T1 arranged in the same column are shared, and a plurality of the shared sensor source lines 123 are shared outside the display area so that the common source line (second Sensor source line) SL71, and the common source line SL70 is connected to the source terminal S7-1 of the sensor driver 20.

  FIG. 9 is a circuit diagram illustrating an example of the configuration of the sensor driver 20. The sensor driver 20 sequentially outputs sensor scanning signals from the gate terminals G1 to G5, sets the pair of TFT sensors T0 and TFT sensors T1 connected to each gate terminal to the selected state sequentially in units of rows, and selects them. The photocurrent signal (drain current) output from the TFT sensor T1 set to the state is converted into a voltage signal, and a plurality of voltage signals based on the plurality of TFT sensors T1 are taken in parallel, and a plurality of signals corresponding to each voltage signal are obtained. Are sequentially output. Such a sensor driver 20 includes a scan driver 201 and a current driver 202.

  The scan driver 201 includes a row direction shift register 2011 as a row direction drive unit. The row direction shift register 2011 has the same number of gate terminals as the number of gate terminals of the display panel 10 (five in the example of FIG. 9), and includes a plurality of TFT sensors T0, which are connected via sensor gate lines. T1 is selected.

  Further, the current driver 202 as a conversion circuit has the same number of terminals as the drain terminal and the source terminal of the display panel 10 (in the example of FIG. 9, drain terminal (7 × 2) + source terminal (7 × 2) = 28). Have. A plurality of drain terminals Dm-0 (m = 1, 2,..., 7, corresponding to FIG. 7) for inputting drain current from the TFT sensor T0 are respectively connected to the non-inverting input terminal of the operational amplifier AMP1. Yes. Further, a constant voltage source for applying a potential Vd is connected to the non-inverting input terminal. Further, a plurality of drain terminals Dm−1 (m = 1, 2,..., 7) for inputting drain current from the TFT sensor T1 are respectively connected to the inverting input terminal of the operational amplifier AMP1. A resistor Rf is connected between the inverting input terminal and the output terminal of the operational amplifier AMP1, and the operational amplifier AMP1 and the resistor Rf constitute a current-voltage conversion circuit.

  The plurality of source terminals Sm-0 (m = 1, 2,..., 7) connected to the plurality of common source lines SLm0 (m = 1, 2,..., 7) are connected to a constant current source. . This constant current source is also connected to a constant voltage source that provides a potential VSS (VSS <Vd), and is a current sink type current source that supplies a constant current Is from the source terminal Sm-0 to the constant voltage source VSS. Further, a plurality of source terminals Sm−1 (m = 1, 2,..., 7) connected to the plurality of common source lines SLm1 (m = 1, 2,..., 7) are supplied as current sources via the buffer circuit BUF. Connected to Is.

  The output terminals of the plurality of operational amplifiers AMP1 are connected in common to the sample hold (SH) circuit 203. The sample hold (SH) circuit 203 takes in parallel the output voltages (voltage signals) of the plurality of operational amplifiers AMP1 corresponding to the plurality of drain terminals Dm−1 (m = 1, 2,..., 7) as parallel signals. The SH circuit 203 is connected to a parallel / serial conversion circuit 204, and the parallel / serial conversion circuit 204 is connected to an analog-digital conversion circuit (ADC) 205. The parallel-serial conversion circuit 204 converts the output voltages of the plurality of operational amplifiers AMP1 as parallel signals captured by the sample-and-hold (SH) circuit 203 into serial signals, and supplies them to the analog-digital conversion circuit (ADC) 205. The analog-digital conversion circuit (ADC) 205 converts the serial signal supplied from the parallel-serial conversion circuit 204 into a digital signal and outputs the digital signal as a digital signal output Vout.

Hereinafter, the operation of the liquid crystal display device shown in FIGS. 1 to 9 will be described.
First, the display operation of the liquid crystal display device will be described. Since the display operation is not different from that of a conventional liquid crystal display device, it will be briefly described here.

  When displaying an image for one screen, a display driver (not shown) sequentially supplies a high level scanning signal from the gate line 111 in the upper row shown in FIG. 4 and displays it on each drain line 112 on a corresponding sub-pixel. A gradation signal corresponding to the gradation level of the image to be generated is supplied. When the scanning signal becomes high level, all the pixel TFTs T2 for one row connected to the gate line 111 where the scanning signal becomes high level are turned on, and the sub-pixels are selected. When the pixel TFT T2 is turned on, the gradation signal supplied to the drain line 112 via the pixel TFT T2 that is turned on is applied to the pixel electrode 114. At this time, a difference voltage between the pixel electrode voltage generated at the pixel electrode 114 and the common voltage applied to the common electrode due to the application of the gradation signal is applied to the liquid crystal 103, and image display is performed on the corresponding sub-pixel. Is called. The voltage applied to the liquid crystal 103 is held in the storage capacitor formed by the capacitor line 151 and the pixel electrode 114 until the next gradation signal is applied to the gradation signal applied to the pixel electrode 114. Is done.

  Next, the operation as a touch sensor will be described. In the initial state, no voltage is applied from the row direction shift register 2011. In this state, all TFT sensors in the display area are in a non-selected state, and a drain current corresponding to the selected state does not flow. Actually, as shown in FIG. 10, although the drain current flows even when the TFT sensor is in a non-selected state (for example, Vgs = 0 [V]), the drain current in this non-selected state is in a selected state ( For example, it is very small compared to the drain current of Vgs = 3 to 5 [V]).

  When all the TFT sensors are in the non-selected state, the row direction shift register 2011 first sets the TFT sensors T0 and T1 connected to the gate terminal G1 corresponding to the divided area 11 in the first row shown in FIG. In order to make the selected state, the voltage of the gate terminal G1 is set to the on-level voltage of the TFT sensors T0 and T1. On the other hand, the voltage of the gate terminals G2 to G5 is the off-level voltage of the TFT sensors T0 and T1.

  When all the TFT sensors T0 and T1 included in the divided area 11 of the first row connected to the gate terminal G1 by the row direction shift register 2011 are selected, drains corresponding to the selected state are obtained from the TFT sensors T0 and T1. A current is output. Accordingly, it is possible to determine whether or not a finger or the like is in contact with the divided area 11 in the first row.

  At this time, the drain voltage of the TFT sensor T0 is equal to the drain voltage of the TFT sensor T1 due to an imaginary short of the operational amplifier AMP1. That is, the drain voltage of the TFT sensor T0 is fixed at a constant value Vd by the constant voltage source Vd, and the drain voltage of the TFT sensor T1 is also Vd. In addition, the specific numerical value of Vd is not specifically limited, For example, it is Vd = zero [V].

  A constant drain current Is flows from the TFT sensor T0 toward the constant voltage VSS by the constant current source. Since a constant drain current Is flows from the TFT sensor T0 and the drain voltage and gate voltage of the TFT sensor T0 are constant, the source voltage of the TFT sensor T0 is in a floating state. Further, the buffer circuit BUF makes the source voltage of the TFT sensor T0 equal to the source voltage of the TFT sensor T1.

  Therefore, the respective electrodes of the TFT sensor T0 and the respective electrodes of the TFT sensor T1 have the same voltage. In this state, when there is no incidence of light from the backlight 104 to the photoelectric conversion unit 124 of the TFT sensor T1, that is, when there is no contact of a finger or the like to the divided area 11 in the first row, the TFT sensor T1 The drain current Ids0 having the same magnitude as the drain current Is of the TFT sensor T0 is output. This relationship is when it is assumed that the TFT sensor T0 and the TFT sensor T1 have the same size. When the TFT sensor T0 and the TFT sensor T1 have different sizes, the drain current Ids0 of the TFT sensor T1 is Ids0 = Is × (S1 / S0). Here, S1 is a value obtained by dividing the channel width of the TFT sensor T1 by the channel length, and S0 is a value obtained by dividing the channel width of the TFT sensor T0 by the channel length.

  Further, when light from the backlight 104 enters the photoelectric conversion unit 124 of the TFT sensor T1, the drain current increases according to the illuminance of the incident light. When this image component is ΔIds, the drain current Ids at the time of light incidence is Ids = Ids0 + ΔIds.

  In this manner, the drain current Ids output from the divided area 11 in the first row is converted into a voltage by a current-voltage conversion circuit including the operational amplifier AMP1 and the resistor Rf. The output voltage of the operational amplifier AMP1 is −Ids × Rf, where Rf is the resistance value of the resistor Rf. In this way, the output voltage from each operational amplifier AMP1 is held by the SH circuit 203 as a parallel signal. Thereafter, the voltage held by the SH circuit 203 is converted into a serial signal by the parallel-serial conversion circuit 204 and input to the ADC 205. The voltage converted into the serial signal is sequentially input to the ADC 205 and converted into a digital signal. The digital signal output Vout is input to a touch sensor control circuit (not shown). In the touch sensor control circuit, the value of the digital signal output Vout corresponds to the division area 11 in which column of the first row, and the value of the digital signal output Vout corresponds to Ids. By determining whether it corresponds, it is determined whether or not a finger or the like has touched the divided area 11 in any column of the first row.

  After the determination as to whether or not a finger or the like has touched the divided area 11 in the first row is completed, the row direction shift register 2011 is connected to the gate terminal G2 corresponding to the divided area 11 in the second row. In order to set the TFT sensors T0 and T1 in the selected state, the voltage of the gate terminal G2 is set to the on-level voltage of the TFT sensors T0 and T1. Similarly, after the determination as to whether or not a finger or the like has touched the divided area 11 for one row is completed, the row direction shift register 2011 displays the voltage of the gate terminal corresponding to the divided area 11 of the next row. Is the on-level voltage of the TFT sensors T0 and T1. Thereby, it can be determined whether or not a finger or the like has been touched in the entire display area.

  As described above, in the present embodiment, the gate line 111 is arranged in a mirror image relationship with respect to a display pixel pair composed of two display pixels arranged adjacent to each other in the column direction. A sensor gate line is arranged in an empty region generated between the display pixel pair, and a TFT sensor having a light receiving area corresponding to two display pixels is connected to the sensor gate line. As a result, the number of sensor gate lines can be reduced and the aperture ratio of the display pixel can be improved.

In the present embodiment, the TFT sensor T0 and the TFT sensor T1 arranged in a two-dimensional manner are selected according to the drain current of the TFT sensor T1 while selecting the TFT sensor T0 and the TFT sensor T1 for each row of the divided area 11. The voltage signal is taken in. In addition to the illuminance, the drain current of the TFT changes due to a change with time and a change in temperature. In this embodiment, Ids0 can be made constant among the drain current of the TFT sensor T1. As described above, since the TFT sensor T0 and the TFT sensor T1 can be considered to have the same temperature condition when viewed as a sensor pair, the influence of the TFT sensor T0 and the TFT sensor T1 due to changes over time and temperature changes on Ids0. A change is brought about in the drain voltage of TFT sensor T0 or TFT sensor T1 without making a change. As described above, the drain current Ids of the TFT sensor T1 depends only on the illuminance, and it is possible to take in a voltage signal that eliminates the influence of the TFT sensor T0 and the TFT sensor T1 due to changes with time and temperature. In this embodiment, the row direction shift register 2011 of the scan driver 201 simultaneously selects the TFT sensors T0 and T1 for one row in the divided area 11 at the same time. Therefore, the output voltage (voltage signal) corresponding to the drain current is output from the operational amplifier AMP1 as a parallel signal. By capturing this parallel signal as a serial signal, it is possible to capture the TFT sensor signal by line sequential driving. is there.

  Further, when considering using the optical sensor device of this embodiment as a touch sensor, it is often unnecessary to determine the presence or absence of contact in units of minute areas such as units of display pixels. Therefore, as shown in FIG. 7, it is possible to divide the display area into a plurality of divided area 11 units each including a plurality of display pixels, and to determine the presence or absence of contact in units of rows of the divided area 11. is there. In this case, the sensor gate line 121, the sensor drain line 122, and the sensor source line 123 can be shared in units of rows in the divided area 11, which leads to a reduction in the number of terminals of the sensor driver 20. In addition, by draining the drain current in units of the divided areas 11, a large drain current can be extracted without amplifying the drain current. Thereby, it is possible to reduce the possibility of erroneous determination in the determination of the presence or absence of contact.

  Further, in the present embodiment, the sensor gate lines 121 are made common for the TFT sensors T0 and T1 arranged in the same row, and the sensor drain line 122 and the sensor source are used for the TFT sensors T0 and T1 arranged in the same column. The line 123 is shared. With such a configuration, the number of sensor gate lines 121, sensor drain lines 122, and sensor source lines 123 can be minimized.

  Here, as shown in the photo-current characteristics of the a-Si TFT in FIG. 10, in the thin film transistor photosensor using the a-Si TFT, the amplification factor of the drain current with respect to the illuminance when the gate voltage is negative. It is larger than the amplification factor of the drain current with respect to the illuminance when the gate voltage is positive. For this reason, normally when a TFT is used as a thin film transistor photosensor, a negative gate voltage is applied to the TFT. However, in this embodiment, the TFTs in the same column are connected to the common sensor drain line 122. Therefore, if a TFT is used by applying a negative gate voltage, drain current always flows from all TFTs belonging to the same column. It becomes a state, and it cannot be determined whether or not there is a contact for each row of the divided area. On the other hand, it is possible to determine the presence or absence of contact in units of rows in the divided area by applying a positive gate voltage (Vgs = 3 to 5 [V]) and using TFTs. However, when a TFT is used by applying a positive gate voltage, the influence due to the above-described change with time and temperature changes becomes large. However, in the present embodiment, the above-described configuration can eliminate the influence due to changes with time and temperature, so that it is possible to determine the presence or absence of correct contact for each row of the divided area 11 while reducing the number of wires. Is possible.

  Further, according to the present embodiment, the pixel TFT T2 constituting the display pixel and the TFT sensors T0 and T1 constituting the optical sensor device can be manufactured by the same process, and the manufacturing cost can be reduced.

  Furthermore, by providing the light shielding wall 126 so as to surround the photoelectric conversion unit 124 of the TFT sensor T1, it is possible to completely shield the photoelectric conversion unit 124 of the TFT sensor T1 when a finger or the like contacts the divided area 11. . Further, since the TFT sensor portion can be completely covered by the light shielding film 142, it is possible to prevent the periodic structure other than the display pixels from being visually recognized when the display panel 10 is observed.

  In the above-described embodiment, the light shielding wall 126 is provided on the TFT substrate 101. However, if the photoelectric conversion unit 124 of the TFT sensor T1 can be completely shielded from light when the finger or the like contacts the divided area 11. However, the light shielding wall 126 is not necessarily provided on the TFT substrate 101. For example, as shown in FIG. 11, a light shielding wall 126 may be provided at a position surrounding the photoelectric conversion portion 124 of the TFT sensor T1 on the color filter substrate 102. The light shielding wall 125 may be a thin film as shown in FIG. 11 instead of a thick film as shown in FIG.

  The circuit configuration of the sensor driver 20 shown in FIG. 9 is also an example and can be changed as appropriate. For example, in the example of FIG. 9, the constant current source is a current sink type constant current source, but is not limited thereto. That is, the same effect as that of the above-described configuration of FIG. 9 can be obtained also as a current discharge type constant current source that supplies the constant current Is toward the source terminal Sm-0 as shown in FIG. In the case of a discharge type constant current source, as shown in FIG. 12, the current source Is is connected to a constant voltage source for applying a voltage Vdd, and the TFT sensor T0 is set to a voltage Vs (Vs <Vdd). You also need to make changes to connect to the voltage source you give.

  Furthermore, although embodiment mentioned above showed the example in the case of incorporating a touch sensor in a liquid crystal display device, the method of this embodiment is applicable also to organic EL display devices other than a liquid crystal display device, for example. FIG. 13 is a diagram showing a cross-sectional structure of the display panel 10 of the organic EL display device in which the optical sensor device according to one embodiment of the present invention is incorporated as a touch sensor, at the same cutting position as in FIG. FIG. 14 is a diagram showing a circuit configuration of a part of one divided area corresponding to FIG. 7 of the display panel 10 of the organic EL display device.

  In FIG. 13, the organic EL display device includes a glass substrate 301 and a sealing glass 302, and the glass substrate 301 and the sealing glass 302 are sealed so as to have a predetermined interval by a seal member (not shown). ing.

  On the glass substrate 301, an anode electrode 311 in an organic EL display element corresponding to each color sub-pixel is formed. An organic EL light emitting layer 313 including an electron transport layer and a hole transport layer is stacked on the anode electrode 311. Further, the organic EL light emitting layer 313 is provided with a cathode electrode 312 made of, for example, ITO.

  In addition, the subpixels of each color having such an organic EL display element as an optical element are insulated by, for example, an insulating layer 315. Further, in this insulating layer 315, the transistor T3 shown in FIG. 14 (only the drain electrode 314 is shown in FIG. 13) and the TFT sensors T0 and T1 described above are provided. The drain electrode 314 of the transistor T3 extends in the column direction of the display panel so as to serve also as a data line (data input line). The source electrode of the transistor T3 is connected to the organic EL display element through the transistor T4 and the capacitor C. Further, the gate electrode of the transistor T3 extends in the row direction of the display panel so as to also serve as a select line (pixel selection line) 318. Further, a light shielding wall 316 is formed on the insulating layer 315, and the sub pixels corresponding to the respective RGB colors are divided by the light shielding wall 316. In order to shield the photoelectric conversion part of the TFT sensor T0, the light shielding wall 316 covering the TFT sensor T0 is coated with, for example, a light shielding ink 317 made of a high light shielding polymer material (not containing water) by, for example, a nozzle coating method. Has been.

  Here, in FIG. 13, the light shielding wall 316 is shown larger than the organic EL display element, but is illustrated in this way for the convenience of illustration, and actually the organic EL display element. Is the bigger one.

  In addition, a reflective film 331 such as an aluminum thin film for making light incident on the TFT sensor T1 is formed on the sealing glass 302. Here, the height (length in the vertical direction of the drawing) of the light shielding wall 316 is determined so as to form a predetermined gap (light valve) between the light shielding wall 316 and the reflective film 331 of the sealing glass 302. . With this configuration, the TFT sensor T1 is in a state in which the light valve is open while the sealing glass 302 is not pressed by the user's finger or the like. In this state, the photoelectric conversion part of the TFT sensor T1 is exposed, and the light emitted from the organic EL display element in the vicinity of the TFT sensor T1 or the light from the outside of the display panel 10 passes through the light valve. The light enters the conversion unit. On the other hand, when a pressing pressure is applied to the sealing glass 302 with a user's finger or the like, a part of the sealing glass 302 is deformed and the light valve is closed. In this state, the photoelectric conversion unit of the TFT sensor T1 is in a light shielding state.

  In the organic EL display device as described above, the anode line 311 and the select line 318 are arranged one by one so as to sandwich the display pixel pair composed of two display pixels adjacent in the column direction. Then, by arranging the anode line 311 and the select line 318 in this way, the sensor gate line 121 is arranged in an empty area generated between the display pixels, and the sensor gate line 121 receives light corresponding to two display pixels. A TFT sensor having an area is connected. As a result, as in the case of the liquid crystal display device, the number of sensor gate lines can be reduced and the aperture ratio of the display pixel can be improved. Even in the case of an organic EL display device, the same effects as those of the above-described liquid crystal display device can be obtained by connecting the TFT sensors T0 and T1 to the sensor driver 20 as shown in FIG. Is possible.

[Second Embodiment]
Next, a second embodiment of the present invention will be described. In the first embodiment, two display pixels adjacent in the column direction are used as one display pixel pair, and the gate line 111 and the capacitor line 151 are arranged so as to have a mirror image relationship with the display pixel pair. By disposing the sensor gate line 121 between the display pixel pairs, a TFT sensor having a light receiving area corresponding to two display pixels can be disposed adjacent to one of the display pixel pairs. On the other hand, in the second embodiment, as shown in FIG. 15, one TFT sensor is arranged only between display pixel pairs composed of two display pixels adjacent in the row direction. The sensor drain line 122 and the sensor source line are connected. On the other hand, no TFT sensor is disposed in the region between the display pixel pair. When the display panel 10 is viewed from the front, the drain line 112 disposed adjacent to the left display pixel in the display pixel pair disposed adjacent to both sides of each TFT sensor is viewed from the left side. The drain line 112 connected to the display pixel via the TFT T2 and adjacent to the right display pixel is connected to the display pixel via the pixel TFT T2 from the right side. That is, the drain line 112 is disposed so as to face the region where the TFT sensor is not disposed and to have a mirror image relationship with the sensor drain line 122 and the sensor source line 123. In this case, the column direction length of one TFT sensor corresponds to the column direction length of one display pixel.

  FIG. 16 is a diagram showing the layout of the gate line 111, the sensor gate line 121, and the capacitor line 151. In the second embodiment, as shown in FIG. 16, all of the gate line 111, the sensor gate line 121, and the capacitor line 151 are arranged in a region sandwiching the display pixels of each row for each row of display pixels.

  Note that the configurations other than the layout of the TFT sensor, the drain line 112, the sensor drain line 122, and the sensor source line 123 shown in FIGS. 15 and 16 can be applied as they are in the first embodiment.

  As described above, in the present embodiment, a TFT sensor is disposed only between a display pixel pair composed of two display pixels arranged adjacent to each other in the row direction, and the TFT sensor, the sensor drain line 122, and the sensor source are disposed. The drain line 112 is arranged in a mirror image relation with respect to the line. As a result, the number of TFT sensors, sensor drain lines 122, and sensor source lines 123 is half that of the first embodiment. Thereby, it is possible to further improve the aperture ratio of the display pixel as compared with the first embodiment.

  Here, in the example of the second embodiment described above, two display pixels arranged adjacent to each other in the row direction are used as one display pixel pair. However, one display pixel pair may be an arbitrary even number column. In this case, the TFT sensor, the sensor drain line 122, and the sensor source line 123 are provided at a position that divides the display pixel pair formed in a predetermined even-numbered column into two equal parts. For example, when four display pixels arranged adjacent to each other in the row direction form one display pixel pair, the TFT sensor, the sensor drain line 122, and the sensor source line 123 are the second and third columns in the display pixel pair. What is necessary is just to provide between the display pixels of eyes.

[Third Embodiment]
Next, a third embodiment of the present invention will be described. It is the example which combined 3rd 1st Embodiment and 2nd Embodiment. That is, in the third embodiment, as shown in FIG. 17, the TFT sensor is disposed only at a position where the display pixel pair composed of four display pixels of 2 rows × 2 columns is equally divided in the row direction. The length in the column direction of one TFT sensor in this case is also made to coincide with the column direction length of the display pixel pair as in the first embodiment.

  Note that the configurations other than the layout of the TFT sensor, drain line 112, sensor drain line 122, and sensor source line 123 shown in FIG. 17 can be applied as they are in the first embodiment. In the third embodiment, all the modifications described in the first and second embodiments can be applied.

  As described above, in this embodiment, the aperture ratio of the display pixel can be further improved as compared with the first and second embodiments.

  Although the present invention has been described above based on the embodiments, the present invention is not limited to the above-described embodiments, and various modifications and applications are naturally possible within the scope of the gist of the present invention.

  Further, the above-described embodiments include various stages of the invention, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, even if some configuration requirements are deleted from all the configuration requirements shown in the embodiment, the above-described problem can be solved, and this configuration requirement is deleted when the above-described effects can be obtained. The configuration can also be extracted as an invention.

  DESCRIPTION OF SYMBOLS 10 ... Display panel, 20 ... Sensor driver, 101 ... TFT substrate, 102 ... Color filter substrate, 104 ... Back light, 105 ... Insulating film, 111 ... Gate electrode (gate line), 112 ... Drain electrode (drain line), 113 ... Source electrode, 114 ... Pixel electrode, 121 ... Gate electrode (sensor gate line), 122 ... Drain electrode (sensor drain line), 123 ... Source electrode (sensor source line), 124 ... Photoelectric converter, 125, 126 ... Light shielding Walls 141... Color filters 142 142 Light-shielding films 143 Common electrodes 151 151 Capacitor lines 201 Scan drivers 2011 Row shift registers 202 Current drivers 203 Sample hold (SH) circuits 204 Parallel-serial conversion circuit, 205... Analog-de Tal conversion circuit (ADC), 301 ... glass substrate, 302 ... sealing glass, 304 ... photoelectric conversion part, 311 ... anode electrode (anode line), 312 ... cathode electrode, 313 ... EL light emitting layer, 314 ... drain electrode (data) Line), 315 ... insulating layer, 316 ... light shielding wall, 317 ... light shielding ink, 318 ... select line, 331 ... reflective film

Claims (15)

A plurality of signal lines arranged in a row direction;
A plurality of scanning lines arranged in a column direction;
A plurality of display pixels having optical elements connected to the signal lines and the scanning lines and arranged two-dimensionally in the vicinity of intersections of the signal lines and the scanning lines;
A plurality of thin film transistor photosensors having a number smaller than the number of each display pixel, arranged between the display pixels, two-dimensionally arranged, and outputting a photocurrent signal corresponding to the amount of incident light;
A plurality of sensor gate lines connected in common to the gate electrodes of the thin film transistor photosensors arranged in the row direction and arranged in the row direction;
A plurality of sensor drain lines connected in common to the drain electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction;
A plurality of sensor source lines connected in common to the source electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction;
A plurality of arrangement regions which are sandwiched between the display pixels arranged in two adjacent rows and extend in the row direction, and each scanning line and each sensor gate line are arranged in at least one row. The plurality of arrangement areas arranged in the arrangement areas different from each other through the displayed pixels;
Equipped with,
The plurality of display pixels are composed of two display pixels arranged adjacent to each other in a column direction to form a plurality of display pixel pairs arranged two-dimensionally,
Each scanning line is arranged in the arrangement region between each display pixel pair adjacent in the column direction,
Each sensor gate line is disposed in the arrangement region sandwiched between the two display pixels of each display pixel pair arranged in a row direction,
The display device, wherein the plurality of thin film transistor photosensors are provided adjacent to the display pixel pairs in a region between the display pixel pairs adjacent in the row direction . The length of the column direction of the TFT photosensor, the display device according to claim 1, characterized in that it is set to a value corresponding to the length of the column direction of the display pixel pairs. The plurality of sensor gate lines, the plurality of sensor drain lines, and the plurality of sensor source lines are each divided into a plurality of groups each having a predetermined number, and the predetermined number is commonly connected in each group. the display device according to claim 1 or 2, characterized in that it is. The plurality of thin film transistor photosensors include a plurality of first thin film transistor photosensors whose semiconductor layers are shielded from light, and a plurality of second thin film transistor photosensors whose semiconductor layers are exposed or shielded according to external force, The first thin film transistor photosensors and the second thin film transistor photosensors are alternately arranged in a row direction,
The plurality of sensor gate lines are commonly connected to gate electrodes of the first thin film transistor photosensors and the second thin film transistor photosensors arranged in a row direction,
The plurality of sensor drain lines are arranged in the column direction with a plurality of first sensor drain lines provided commonly connected to the drain electrodes of the first thin film transistor photosensors arranged in the column direction. A plurality of second sensor drain lines connected in common to the drain electrodes of the respective second thin film transistor photosensors,
The plurality of sensor source lines are connected to the source electrodes of the first thin film transistor photosensors and connected to the source electrodes of the first thin film transistor photosensors, and the source electrodes of the second thin film transistor photosensors. A plurality of second sensor source lines connected in common,
Display device according to any one of claims 1 to 3, characterized in that. A row direction driving unit that sequentially outputs sensor scanning signals to the plurality of sensor gate lines, and sequentially sets each of the first thin film transistor photosensors and each of the second thin film transistor photosensors in units of rows;
The plurality of second sensor drain lines are set in a state in which the voltages of the electrodes of the first thin film transistor photosensor and the second thin film transistor in the row set to the selected state by the row direction driving unit are set to an equal voltage. A conversion circuit for acquiring in parallel a voltage signal corresponding to the drain current from each of the second thin film transistor photosensors,
The display device according to claim 4 , further comprising: The conversion circuit includes:
A constant current source for causing a constant drain current to flow through the source electrode of each first thin film transistor photosensor;
A plurality of buffer circuits for outputting the floating voltage of the source electrode of each first thin film transistor photosensor generated by the drain current of each first thin film transistor photosensor to the source electrode of each second transistor photosensor;
A constant voltage source for applying a constant voltage to a source electrode of each of the first thin film transistor photosensors;
A plurality of currents for causing an imaginary short circuit between the drain electrode of each first thin film transistor photosensor and the drain electrode of each second thin film transistor photosensor and converting the drain current of each second thin film transistor into a voltage signal A voltage conversion circuit;
A plurality of the voltage signals output from the current-voltage conversion circuits are supplied as parallel signals, and a parallel-serial conversion circuit that converts the parallel signals into serial signals;
The display device according to claim 5 , further comprising: Display device according to any one of claims 4 to 6 wherein the plurality of first thin film transistor light sensor and the second thin film transistor photosensor of said plurality is characterized by having a thin film transistor structure composed of amorphous silicon. Wherein the display pixels, the display device according to any one of claims 1 to 7, characterized in that it comprises a liquid crystal display element as the optical element. Wherein the display pixels, the display device according to any one of claims 1 to 7, characterized in that it comprises a light emitting device comprising an organic electroluminescent device as the optical element. Display device according to any one of claims 1 to 9, characterized in that it comprises a light-shielding film each TFT photosensor is shielded so as not to be exposed to the outside. A plurality of signal lines arranged in a row direction;
A plurality of scanning lines arranged in a column direction;
A plurality of display pixels having optical elements connected to the signal lines and the scanning lines and arranged two-dimensionally in the vicinity of intersections of the signal lines and the scanning lines;
A plurality of thin film transistor photosensors having a number smaller than the number of each display pixel, arranged between the display pixels, two-dimensionally arranged, and outputting a photocurrent signal corresponding to the amount of incident light;
A plurality of sensor gate lines connected in common to the gate electrodes of the thin film transistor photosensors arranged in the row direction and arranged in the row direction;
A plurality of sensor drain lines connected in common to the drain electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction;
A plurality of sensor source lines connected in common to the source electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction;
A plurality of arrangement regions sandwiched between the display pixels arranged in two adjacent columns and extending in the column direction, wherein the signal lines, the sensor drain lines, and the sensor source lines are The plurality of arrangement areas arranged in the arrangement areas different from each other via the display pixels arranged in at least one column;
Comprising
The plurality of display pixels are composed of an even number of the display pixels arranged adjacent to each other in the row direction to form a plurality of display pixel pairs arranged two-dimensionally,
Each signal line is arranged in the arrangement region between each display pixel pair adjacent in the row direction,
The sensor drain lines and the sensor source lines are sandwiched between the display pixels in the display pixel pairs arranged in the column direction at positions where the even number of display pixels are equally divided in the row direction. Arranged in the arrangement area,
Each of the thin film transistor photosensors is provided in a region sandwiched between the display pixels at a position obtained by dividing the even number of display pixels in the row direction into two equal parts. Display device. Each display pixel pair is composed of two display pixels arranged adjacent to each other in the row direction,
The sensor drain lines and the sensor source lines are arranged in the arrangement region sandwiched between the display pixels of the display pixel pairs arranged in a column direction,
The display device according to claim 11, wherein each thin film transistor photosensor is provided in a region sandwiched between the display pixels of the display pixel pair. 13. The display device according to claim 11, wherein a length of the thin film transistor photosensor in the column direction is set to a value corresponding to a length of the display pixel in the column direction. A plurality of signal lines arranged in a row direction;
A plurality of scanning lines arranged in a column direction;
A plurality of display pixels having optical elements connected to the signal lines and the scanning lines and arranged two-dimensionally in the vicinity of intersections of the signal lines and the scanning lines;
A plurality of thin film transistor photosensors having a number smaller than the number of each display pixel, arranged between the display pixels, two-dimensionally arranged, and outputting a photocurrent signal corresponding to the amount of incident light;
A plurality of sensor gate lines connected in common to the gate electrodes of the thin film transistor photosensors arranged in the row direction and arranged in the row direction;
A plurality of sensor drain lines connected in common to the drain electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction;
A plurality of sensor source lines connected in common to the source electrodes of the thin film transistor photosensors arranged in the column direction and arranged in the column direction;
A plurality of first regions sandwiched between the respective display pixels arranged in two adjacent rows and extending in the row direction, wherein each of the scanning lines and each of the sensor gate lines is at least in one row. The plurality of first regions disposed in the first regions different from each other via the disposed display pixels;
A plurality of second regions sandwiched between the display pixels arranged in two adjacent columns and extending in the column direction, the signal lines, the sensor drain lines, and the sensor source lines, The plurality of second regions disposed in the second regions different from each other via the display pixels disposed in at least one column,
Comprising
The plurality of display pixels are composed of a plurality of display pixels arranged in two adjacent rows and a predetermined number of adjacent columns forming an even number, and form a plurality of display pixel pairs arranged two-dimensionally,
  Each signal line is disposed in the second region between each display pixel pair adjacent in the row direction,
  The sensor drain lines and the sensor source lines are sandwiched between the display pixels at positions where the predetermined number of columns are equally divided in the row direction of the display pixel pairs arranged in the column direction. Disposed in the first region;
  Each of the thin film transistor photosensors is provided in a region sandwiched between the two rows of display pixels at a position obtained by dividing the predetermined number of columns into two equal parts of each display pixel pair. . Each display pixel pair includes four display pixels arranged in two adjacent rows and two adjacent columns,
Each sensor drain line and each sensor source line are disposed in a region sandwiched between the display pixels in the row direction of the display pixel pairs arranged in the column direction,
The display device according to claim 14, wherein each thin film transistor photosensor is provided in a region sandwiched between the display pixels in the row direction of the two rows of the display pixel pairs.

Images