JP5163134B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element is mounted on a surface of a circuit board, and more particularly to a method for manufacturing a semiconductor device in which a gap between a semiconductor element and a circuit board is filled with a resin and sealed.

  2. Description of the Related Art Conventionally, semiconductor devices using flip chip bonding technology have been required to improve solder bump connection reliability. In order to satisfy this requirement, first, a semiconductor element having a solder bump formed on the surface is mounted on a circuit board by flip chip bonding. Then, a mounting method is performed in which a gap between a semiconductor element and a circuit board is filled with an underfill resin, and the underfill resin is cured and sealed.

  As a method for filling the underfill, a technique of dropping a liquid underfill resin in the vicinity of a semiconductor element is known (see, for example, Patent Document 1). As a result, the strength of the connection between the circuit board and the semiconductor element is increased, or the stress generated from the difference in thermal expansion between the circuit board and the semiconductor element is dispersed and buffered to prevent the semiconductor device 100 from being broken and damaged. In addition, it can be expected to improve insulation by protecting the solder bumps and other conductor portions.

  Based on the technique described in Patent Document 1, a nozzle for supplying a liquid underfill resin is moved along the side surface of a semiconductor element using a robot dispenser or the like.

  Here, a conventional method of filling an underfill resin in a gap portion between a semiconductor element mounted by flip chip bonding and a circuit board will be described with reference to FIGS.

  FIG. 8 is a schematic plan view illustrating a nozzle and a semiconductor device according to a conventional method. FIG. 9 is an explanatory view showing a state in which the underfill resin supplied from the nozzle is filled in the conventional method.

  The semiconductor device 50 includes a circuit board 51 and a semiconductor element 52 mounted on the circuit board 51 by flip chip bonding. A gap between the circuit board 51 and the semiconductor element 52 in the semiconductor device 50 is used along one side surface of the semiconductor element 52 as shown in FIG. And in FIG. 9, underfill resin is dripped and supplied, moving the nozzle 53 (in the direction shown by arrow A). Since the semiconductor device 50 is inclined so that the upper side in the figure is high and the lower side is low, the supplied underfill resin 54 flows in the direction indicated by the arrow B in the figure. As a result, the underfill resin is filled in the gap between the circuit board 51 and the semiconductor element 52.

  As shown in FIG. 9A, the underfill resin 54 supplied to the gap S from one side surface of the semiconductor element 52 by the nozzle 53 moving in the direction indicated by the arrow A is shown in FIG. 9B and FIG. As shown to (C), it flows toward the opposite side surface from one side surface of the gap S. In this way, the underfill resin 54 is filled in the gap S between the circuit board 51 and the semiconductor element 52. As a result, the unfilled region where the underfill resin 54 has not yet reached and the air remains is reduced.

Next, the underfill resin 54 that flows through the gap S between the circuit board 51 and the semiconductor element 52 fills the gap S as shown in FIGS. 9D and 9E. Along with this, the unfilled area is further reduced, and finally, the entire gap S is filled with the underfill resin 54 as shown in FIG. Further, by heating the semiconductor device 50 in which the entire gap S is filled with the underfill resin 54, the filled underfill resin 54 is cured. The cured underfill resin 54 seals the gap S between the circuit board 51 and the semiconductor element 52. Thereby, as a result of underfill resin protecting a solder bump, the connection reliability of a solder bump improves.
JP-A-7-106358

  8 and 9, the underfill resin 54 is supplied while the nozzle 53 moves in the direction indicated by the arrow A. For this reason, as shown in FIGS. 9B to 9C, the flow of the underfill resin 54 is a position where the nozzle 53 starts supplying the underfill resin 54 and is supplied first. 9, the progress on the right side (opposite to the direction of the arrow A) is fast, and the left-side travel supplied later is slow.

  Further, the underfill resin 54 supplied from the nozzle 53 is filled while flowing through the gap S between the circuit board 51 and the semiconductor element 52, as shown in FIGS. 9D and 9E. .

  Here, the underfill resin 54 filled in the gap S between the circuit board 51 and the semiconductor element 52 mounted by flip-chip bonding flows slowly in the central portion of the gap S, while each side surface in the peripheral portion of the gap S. It is known that it tends to flow fast along. This is because solder bumps and the like provided in the gap S are resistant to the flow of the underfill resin 54, while most of the resistances such as solder bumps are provided around the gap S. By not being done.

  For this reason, when the nozzle 53 is moved along one side surface of the semiconductor element 52 as in this example, as shown in the unfilled regions in FIGS. 9D and 9E, the nozzle 53 In many cases, the underfill resin 54 finally flows to the diagonal of the position where the supply is started.

  Also, as shown in FIG. 9 (F), the underfill resin 54 that flows counterclockwise through the gap and arrives diagonally, and quickly flows along the side surface so as to flow clockwise and wrap around the gap. When the underfill resin 54 that has reached the diagonal is joined, the remaining air is left behind due to the slow flow of the underfill resin 54 that flows through the central portion, and voids 55 are easily generated.

  As described above, the difference in timing of the underfill resin 54 that is caused by the deviation of the flow of the underfill resin 54 causes the generation of the void 55 due to entrainment of the air in which the flowing resin remains.

As a result, there is a problem in that sufficient void strength and / or heat buffering action may not be obtained by the void 55.
In addition, the melted solder bump in the void 55 flows at the time of reheating in a later process such as a process of mounting the semiconductor device 50 by the void 55, and another solder bump or the semiconductor element 52 in the void 55 flows. As a result of the occurrence of a short-circuiting bump that is short-circuited with an unexpected part, there is a problem that it causes a defect.

  The present invention has been made in view of the above points, and by preventing the occurrence of voids in the underfill resin filled in the gap between the circuit board and the semiconductor element, the connection reliability of the solder bumps is further improved. It is an object of the present invention to provide a method for manufacturing a high semiconductor device.

In the present invention, in order to solve the above problems, a step of mounting a semiconductor element on the surface of a circuit board, a step of filling a fluid between the circuit board and the semiconductor element with a fluid resin, and the gap Curing the filled resin, and in the step of filling the gap with the resin, the side surface of the semiconductor element faces the side surface of the semiconductor element and is parallel to the facing side surface of the semiconductor element. A semiconductor device manufacturing method is provided in which the resin is supplied to the gap from a plurality of positions arranged so as to be separated from the side surface of the semiconductor element as the distance from the center portion increases .

  According to such a method for manufacturing a semiconductor device, the semiconductor element is mounted on the surface of the circuit board. Next, a resin having fluidity is filled into a gap between the circuit board and the semiconductor element from a plurality of positions facing the side surface of the semiconductor element. Next, the resin filled in the gap is cured.

  According to the present invention, by supplying the resin to the gap from a plurality of positions facing the side surface of the semiconductor element, the resin supply positions are dispersed, so that the uneven flow of the resin flowing through the gap is reduced. be able to. This makes it possible to prevent the occurrence of voids due to the difference in the timing at which the resin arrives due to the uneven flow of resin. As a result, the connection strength of the semiconductor device by the solder bumps and the buffering effect of heat by the resin are improved, and a short circuit by the solder bumps melted by reheating the semiconductor device can be prevented.

Embodiments of the present invention will be described below with reference to the drawings.
[First Embodiment]
First, a first embodiment of the present invention will be described.

  First, the configuration of the semiconductor device of this embodiment will be described. FIG. 1 is a schematic plan view illustrating a nozzle and a semiconductor device according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating the nozzle and the semiconductor device according to the first embodiment.

  As shown in FIGS. 1 and 2, the semiconductor device 100 according to the present embodiment includes a circuit board 101, a semiconductor element 102, and solder bumps 103. In the present embodiment, the underfill resin 105 is supplied by flowing the underfill resin 105 from the nozzle 104 into the gap S1 between the circuit board 101 and the semiconductor element 102 in the semiconductor device 100. And the gap S between the semiconductor element 102 is filled.

  A method for manufacturing such a semiconductor device 100 will be described. In the semiconductor device 100 of the present embodiment, a step of mounting the semiconductor element 102 on the surface of the circuit board 101, and a step of filling the gap S1 between the circuit board 101 and the semiconductor element 102 with a fluid underfill resin 105 And a step of curing the underfill resin 105 filled in the gap S1, and in the step of filling the gap S1 with the underfill resin 105, the gap S1 is formed from a plurality of positions facing the side surface of the semiconductor element 102. The underfill resin 105 is supplied to the substrate.

  First, as shown in FIG. 1, a semiconductor element 102 using silicon or the like as a base material is formed on a surface of a circuit board 101 made of a material such as glass epoxy or ceramic, for example, tin (Sn) -lead ( It is mounted face-down by flip chip bonding using a plurality of solder bumps 103 made of Pb) solder. As a result, an electrical connection for supplying power and inputting / outputting signals between the semiconductor element 102 and the circuit board 101 is realized.

  Next, as shown in FIG. 2, the underfill resin 105 is supplied by the nozzle 104 and filled in the gap S <b> 1 between the circuit board 101 and the semiconductor element 102. Here, as shown in FIG. 1, a plurality of (for example, four) nozzles 104 are provided in the vicinity of one of the four side surfaces of the rectangular semiconductor element 102, and the side surfaces of the semiconductor element 102 that face each other. Are arranged at equal intervals in parallel. The underfill resin 105 is simultaneously supplied from the nozzle 104.

  Here, as shown in FIG. 2, the semiconductor device 100 is inclined so that the side to which the underfill resin 105 is supplied by the nozzle 104 is high and the opposite side is low. It flows in the direction indicated by the arrow X in FIG.

The underfill resin 105 is a resin having an insulating property and a thermosetting property, such as an epoxy composition or a urethane composition. The underfill resin 105 is mixed with a material for buffering a difference in thermal expansion between the circuit board 101 and the semiconductor element 102 in the form of fine particles. The viscosity of the underfill resin 105 suitable for manufacturing the semiconductor device 100 according to the present embodiment is at least 0.5 Pa · s or more, and usually 1.4 Pa · s or more. The viscosity of the underfill resin 105 is not necessarily limited to this .

  When the gap S1 between the circuit board 101 and the semiconductor element 102 is filled with the underfill resin 105 supplied from the nozzle 104, the circuit board 101 and the semiconductor element are heated by curing the underfill resin 105. The gap S <b> 1 between the two is sealed. As a result, the connection strength between the circuit board 101 and the semiconductor element 102 increases, the semiconductor device 100 is protected from the thermal expansion difference between the circuit board 101 and the semiconductor element 102, and the solder bump 103 is a semiconductor in the gap S <b> 1. Even when the device 100 is melted by reheating at the time of mounting, short-circuiting with other solder bumps and / or conductor portions can be prevented.

  In the example of FIG. 1, the number of nozzles 104 is four. However, the number of nozzles 104 is not limited to this, and is necessary based on conditions such as the width of the semiconductor element 102 and the number or arrangement of the solder bumps 103. It can be increased or decreased accordingly.

  Further, when the underfill resin 105 is supplied to the semiconductor device 100 by the nozzle 104, the underfill resin 105 is supplied by the nozzle 104 so that the underfill resin 105 flows in the direction indicated by the arrow X in FIG. It may be arranged upright with the side to be placed up.

  Next, a multi-nozzle composed of a plurality of nozzles according to the present embodiment will be described. FIG. 3 is a diagram illustrating the multi-nozzle according to the first embodiment. FIG. 3A is a side view of the multi-nozzle of the present embodiment. FIG. 3B is a bottom view of the multi-nozzle of the present embodiment.

  As shown in FIGS. 3A and 3B, the multi-nozzle 150 of the present embodiment has a plurality of nozzles 104 arranged in a line on the lower surface. Each nozzle 104 extends in parallel from the trunk portion 151 of the multi-nozzle 150 to the lower side in FIG. 3 with the same length. The upper part 152 of the multi-nozzle 150 is connected to a supply device (not shown) that supplies the underfill resin 105. Based on the supply of the underfill resin 105 from the supply device, the underfill resin 105 is dropped onto the semiconductor device 100 from each of the nozzles 104 on the lower surface of the multi-nozzle 150 as shown in FIGS.

  Here, the inner diameter of the nozzle 104 is preferably about 0.1 mm. In the case of a low-viscosity resin (about 0.5 Pa · s), the underfill resin 105 can be supplied without delay by preventing the resin from dripping from the tip of the nozzle by making it thin to this extent.

  Also, based on this, the outer diameter of the nozzle 104 is configured to be at least about 0.3 mm. Based on these, when arranging a plurality of nozzles 104 in the multi-nozzle 150, the interval between the nozzles 104 is set to about 0.5 mm or more.

  In this embodiment, the nozzles 104 are arranged at equal intervals. However, the present invention is not limited to this, and the composition of the underfill resin 105, the viscosity based on the temperature, the state of the gap between the circuit board 101 and the semiconductor element 102, the solder bumps Based on conditions such as the number or arrangement of 103, the interval can be changed as necessary.

  In addition, the inner diameter of the nozzle 104 in this embodiment is set such that the nozzle 104 is parallel to one side surface of the semiconductor element 102 and each position where the plurality of nozzles 104 are arranged and the center of the side surface of the semiconductor element 102. You may make it differ according to the distance. For example, the inner diameter of the nozzle 104 may be made smaller as the distance between each position where the plurality of nozzles 104 are arranged and the center of the side surface of the semiconductor element 102 increases in the above direction.

  In addition, the timing of supplying the underfill resin 105 in this embodiment is determined by the position of each of the plurality of nozzles 104 and the center of the side surface in the direction in which the nozzle 104 is parallel to one side surface of the semiconductor element 102 facing each other. It may be different according to the distance.

  For example, the timing for supplying the underfill resin 105 may be delayed as the distance between each position where the plurality of nozzles 104 are arranged and the center of the side surface of the semiconductor element 102 in the above direction increases. . Thereby, the timing at which the underfill resin 105 supplied from the nozzle 104 proceeds through the gap S1 can be adjusted, and the generation of voids in the underfill resin 105 can be prevented.

  Further, the nozzles 104 of the present embodiment all extend in parallel downward from the body portion 151 of the multi-nozzle 150 with the same length. However, the length and orientation of each nozzle 104 are not limited to this. Can be changed as needed.

  Next, how the underfill resin is filled in the gap S1 between the circuit board and the semiconductor element in this embodiment will be described. FIG. 4 is an explanatory diagram showing a state in which the underfill resin supplied from the nozzle is filled in the first embodiment.

  As described above, the semiconductor device 100 includes the circuit board 101 and the semiconductor element 102 mounted on the circuit board 101 by flip chip bonding. As shown in FIG. 1, the plurality of nozzles 104 of the multi-nozzle 150 are arranged in a row horizontally along one side surface of the semiconductor element 102 (in the drawing, the side surface opposite to the direction indicated by the arrow X in FIG. 1). Are arranged as follows. Underfill resin 105 is simultaneously dropped from the nozzles 104 and supplied to the gap S1 between the circuit board 101 and the semiconductor element 102 in the semiconductor device 100. As a result, the underfill resin 105 is filled in the gap S <b> 1 between the circuit board 101 and the semiconductor element 102.

  As shown in the gap S1 in FIG. 4, the underfill resin 105 supplied to the gap S1 from the upper side surface of the semiconductor element 102 by the nozzles 104 arranged in a row in a row changes over time, as shown in FIG. As shown in FIG. 4 (D), it flows from the upper side to the lower side of the gap. In this way, the underfill resin 105 is filled in the gap between the circuit board 101 and the semiconductor element 102. Along with this, the unfilled area where the underfill resin 105 has not yet reached and the air remains is reduced.

  Here, in the present embodiment, the nozzles 104 arranged in a row horizontally supply the underfill resin 105 simultaneously. For this reason, as shown in FIGS. 4B to 4D, the flow of the underfill resin 105 is less biased than the prior art (see FIG. 9), and is directed downward in FIG. , It will proceed almost simultaneously in a side-by-side state.

  Finally, as shown in FIG. 4E, the entire gap S1 is filled with the underfill resin 105. Thereafter, by heating the semiconductor device 100 in which the gap is filled with the underfill resin 105, the filled underfill resin 105 is cured. The cured underfill resin 105 seals the gap S <b> 1 between the circuit board 101 and the semiconductor element 102.

As described above, in the semiconductor device 100 according to the first embodiment, the underfill resin 105 is supplied by supplying the underfill resin 105 to the gap S <b> 1 from a plurality of positions facing the side surface of the semiconductor element 102. Since the positions are dispersed, it is possible to reduce the deviation of the flow progress timing due to the supply of the underfill resin 105 flowing through the gap S1. Accordingly, it is possible to prevent the occurrence of voids caused by the remaining air being entrained in the flowing underfill resin 105 due to the difference in timing when the underfill resin 105 arrives due to the uneven flow of the underfill resin 105. It becomes possible. As a result, the connection strength by the solder bump 103 and the heat buffering action by the underfill resin 105 of the semiconductor device 100 are improved, and the solder bump 103 melted by being reheated when the semiconductor device 100 is mounted or the like. Can prevent short circuit.
[Second Embodiment]
Next, a second embodiment will be described. Differences from the first embodiment described above will be mainly described, and the same reference numerals are used for the same matters, and descriptions thereof are omitted.

  The second embodiment is different from the first embodiment in that a plurality of nozzles are arranged so as to be separated from the side surfaces of the semiconductor elements as the nozzles are separated from the central part of the side surfaces of the semiconductor elements facing each other. Different.

First, the configuration of the semiconductor device of this embodiment will be described. FIG. 5 is a schematic plan view illustrating the nozzle and the semiconductor device according to the second embodiment.
As shown in FIG. 5, the semiconductor device 200 of the present embodiment includes a circuit board 201, a semiconductor element 202, and solder bumps 103, as in the first embodiment. In the present embodiment, the underfill resin 105 of the first embodiment and the gap between the circuit board 201 and the semiconductor element 202 in the semiconductor device 200 and the gap S2 described later in FIG. The underfill resin 205, which will be described later with reference to FIG. 7, is supplied in a similar manner by filling the gap S2 between the circuit board 201 and the semiconductor element 202 by supplying the underfill resin 205 with a flow down.

  A method for manufacturing such a semiconductor device 200 will be described. In the semiconductor device 200 of the present embodiment, a step of mounting the semiconductor element 202 on the surface of the circuit board 201, and a step of filling the gap S2 between the circuit board 201 and the semiconductor element 202 with a fluid underfill resin 205 And a step of curing the underfill resin 205 filled in the gap S2. In the step of filling the gap S <b> 2 with the underfill resin 205, the plurality of nozzles 204 are opposed to the side surface of the semiconductor element 202, and the positions of the plurality of nozzles 204 are centered on the side surface in a direction parallel to the side surface. As the distance from the distance increases, the semiconductor element 202 is arranged so as to be separated from the side surface, and the underfill resin 205 is supplied to the gap S2.

  First, as in the first embodiment, as shown in FIG. 5, the semiconductor element 202 is mounted on the surface of the circuit board 201 face down by flip chip bonding using a plurality of solder bumps. As a result, electrical connection for supplying power and inputting / outputting signals between the semiconductor element 202 and the circuit board 201 is realized.

  Next, as in the first embodiment, the underfill resin 205 is supplied by the nozzle 204 to fill the gap S <b> 2 between the circuit board 201 and the semiconductor element 202. Here, as shown in FIG. 5, a plurality of (for example, five) nozzles 204 are arranged in the vicinity of one of the four side surfaces of the rectangular semiconductor element 202, and the semiconductor to which the nozzles 204 are opposed. As the distance from the center of the side surface of the element 202 increases, the semiconductor elements 202 are arranged in a “V” shape with the opposite side surfaces facing downward. Then, the underfill resin 205 is simultaneously supplied from the nozzle 204.

  Here, as in the first embodiment, the semiconductor device 200 is inclined so that the side to which the underfill resin 205 is supplied by the nozzle 204 on the upper side of the drawing is high and the side on the opposite side is low. The filled underfill resin 205 flows in the direction indicated by the arrow X in the figure.

  When the gap S2 between the circuit board 201 and the semiconductor element 202 is filled with the underfill resin 205 supplied from the nozzle 204, as in the first embodiment, the same as in the first embodiment. Further, by heating and curing the underfill resin 205, the gap S2 between the circuit board 201 and the semiconductor element 202 is sealed. Thereby, the connection strength between the circuit board 201 and the semiconductor element 202 is increased, the semiconductor device 200 is protected from the thermal expansion difference between the circuit board 201 and the semiconductor element 202, and the solder bumps are formed in the gap space in the semiconductor device. Even when melted by reheating at the time of mounting 200, short-circuiting with other solder bumps and / or conductor portions can be prevented.

  In the example of FIG. 5, the number of nozzles 204 is five. However, the number of nozzles 204 is not limited to this, and is necessary based on conditions such as the width of the semiconductor element 202 and the number or arrangement of the solder bumps 103. It can be increased or decreased accordingly.

  The V-shaped angle of the nozzle 204 array is desirably 120 ° or more, but is not necessarily limited to 120 °, and is necessary based on conditions such as the chip size of the semiconductor element 202 and the arrangement state of the solder bumps 103. Can be freely determined according to

  Further, when the underfill resin 205 is supplied to the semiconductor device 200 with the nozzle 204, the semiconductor device 200 is placed under the nozzle 204 on the upper side of the drawing so that the underfill resin 205 flows in the direction indicated by the arrow X in the drawing. Alternatively, the fill resin 205 may be placed upright with the side to which the fill resin 205 is supplied facing up.

  Next, a multi-nozzle composed of a plurality of nozzles according to the present embodiment will be described. FIG. 6 is a diagram illustrating a multi-nozzle according to the second embodiment. FIG. 6A is a bottom view of a configuration example of the multi-nozzle of the present embodiment. FIG. 6B is a bottom view of another configuration example of the multi-nozzle of the present embodiment.

  In the present embodiment, unlike the multi-nozzle 150 of the first embodiment, as shown in FIG. 6A, the multi-nozzle 250A has a plurality of nozzles 204 arranged in a V shape at regular intervals. Configure. As with the first embodiment, the nozzles 204 are all the same length downward from the body of the multi-nozzle 250A (here, perpendicular to the plane of the figure and from the plane of the figure). It extends in parallel toward the direction toward you. The upper part of the multi-nozzle 250 </ b> A is connected to a supply device (not shown) that supplies the underfill resin 205. Based on the supply of the underfill resin 205 from the supply device, the underfill resin 205 is dropped onto the semiconductor device 200 from each of the nozzles 204 on the lower surface of the multi-nozzle 250A as shown in FIG.

  Here, it is desirable that the inner diameter of the nozzle 204 is configured to be about 0.1 mm as in the first embodiment. In the case of a low-viscosity resin (about 0.5 Pa · s), it is possible to prevent the resin from dripping from the tip of the nozzle and to supply the underfill resin 205 without delay by reducing the resin to this level.

  Also, based on this, as in the first embodiment, the outer diameter of the nozzle 204 is configured to be at least about 0.3 mm. Based on these, as in the first embodiment, when the plurality of nozzles 204 are arranged in the multi-nozzle 250A, the interval between the nozzles 204 is configured to be about 0.5 mm or more.

  Further, as another configuration example of the present embodiment, as shown in FIG. 6B, a multi-nozzle 250B configured by arranging a plurality of nozzles 204 so as to draw an arc may be used. This multi-nozzle 250B can provide the same effects as the multi-nozzle 250A of the present embodiment.

  In this embodiment, the nozzles 204 are arranged at equal intervals. However, the present invention is not limited to this, the composition of the underfill resin 205, the viscosity based on the temperature, the state of the gap between the circuit board 201 and the semiconductor element 202, solder bumps The interval can be changed as necessary based on conditions such as the number of elements or their arrangement.

  In addition, the inner diameter of the nozzle 204 in this embodiment is set so that each nozzle 204 is disposed in the direction parallel to one side surface of the semiconductor element 202 facing the center of the side surface of the semiconductor element 202. You may make it differ according to the distance. For example, the inner diameter of the nozzle 204 may be made smaller as the distance between each position where the plurality of nozzles 204 are arranged in the above direction and the center of the side surface of the semiconductor element 202 increases.

  In addition, the timing of supplying the underfill resin 205 in this embodiment is determined by the positions of the plurality of nozzles 204 and the center of the side surface in the direction in which the nozzle 204 is parallel to one side surface of the semiconductor element 202 facing each other. It may be different according to the distance.

  For example, the timing for supplying the underfill resin 205 may be delayed as the distance between each position where the plurality of nozzles 204 are arranged and the center of the side surface of the semiconductor element 202 increases in the above direction. . As a result, the timing at which the underfill resin 205 supplied from the nozzle 204 travels through the gap space can be further greatly adjusted, and generation of voids in the underfill resin 205 can be prevented.

  Further, the nozzles 204 of the present embodiment all extend in parallel downward from the trunk of the multi-nozzle 250A with the same length. However, the length and orientation of each nozzle 204 are not limited thereto. It can be changed as needed.

  Next, how the underfill resin is filled in the gap between the circuit board and the semiconductor element in this embodiment will be described. FIG. 7 is an explanatory diagram illustrating a state in which the underfill resin supplied from the nozzle is filled in the second embodiment.

  As described above, the semiconductor device 200 includes the circuit board 201 and the semiconductor element 202 mounted on the circuit board 201 by flip chip bonding. As shown in FIG. 5, the plurality of nozzles 204 of the multi-nozzle 250 </ b> A are directed downward with respect to the upper side surface (the side surface opposite to the direction indicated by the arrow X in FIG. 5) of the semiconductor element 202. Arranged in a V shape. Underfill resin 205 is simultaneously dropped from the nozzles 204 and supplied to the gap S <b> 2 between the circuit board 201 and the semiconductor element 202 in the semiconductor device 200. As a result, the underfill resin 205 is filled in the gap S <b> 2 between the circuit board 201 and the semiconductor element 202.

  Here, the underfill resin 205 filled in the gap S2 between the circuit board 201 and the semiconductor element 202 mounted by flip-chip bonding flows slowly in the central portion of the gap S2, while each side surface in the peripheral portion of the gap S2. It is known that it tends to flow fast along. This is because solder bumps and the like provided in the gap S2 are resistant to the flow of the underfill resin 205, while most of the resistances such as the solder bump 103 are provided around the gap S2. Because it is not provided.

  In contrast, in the present embodiment, as shown in FIGS. 5 to 7, among the nozzles 204 included in the multi-nozzle 250 </ b> A, the central nozzle 204 is disposed close to the semiconductor element 202, and the other nozzles 204 are disposed from the center. It arrange | positions so that it may move away from the semiconductor element 202 as it remove | deviates outside.

  That is, the center disposed at the apex of the V-shape so that the progress of the underfill resin 205 flowing through the central portion of the gap S2 where the progress is delayed exceeds the progress of the flow of the underfill resin 205 flowing through the fast-moving side portion. The nozzles 204 are arranged so as to be close to the semiconductor element 202, while the V-shaped nozzles 204 are arranged so as to be separated from the semiconductor element 202. As a result, the delay in the progress of the underfill resin 205 flowing in the center portion is corrected and the progress of the underfill resin 205 flowing in the both sides is delayed so that the underfill resin 205 flowing in the center portion reaches the lower end of the gap S2 first. Can be made.

The details of how the underfill resin 205 supplied from the nozzle 204 of the present embodiment is filled will be described below with reference to FIG.
As shown in FIG. 7A, the underfill resin 205 supplied to the gap from the upper side surface of the semiconductor element 202 by the nozzles 204 arranged in a V-shape is changed as the time passes. As shown in FIG. 7D, the flow flows from the upper side to the lower side of the gap while maintaining the V-shape from the center tip to both sides of the flow. In this way, the underfill resin 205 is filled in the gap between the circuit board 201 and the semiconductor element 202. Along with this, the unfilled area in which air remains without the underfill resin 205 reaching yet is reduced.

  Here, in this embodiment, the underfill resin 205 is simultaneously supplied by the nozzles 204 arranged in a V shape. For this reason, as shown in FIGS. 7B to 7D, the flow of the underfill resin 205 is compared with that of the prior art (see FIG. 9) and the first embodiment (see FIG. 4). The progress of the flow in the center of the gap (that is, the V-shaped tip formed by the underfill resin 205 flowing in the gap) is accelerated.

  Based on this, as shown in FIG. 7D, the underfill resin 205 flowing through the center of the gap S2 reaches the lower end of the gap S2 at the earliest timing. On the other hand, the underfill resin 205 flowing on both sides of the gap S2 has not yet reached the lower end of the gap S2, and an unfilled region remains at the corners on both sides of the lower end. The unfilled regions on both sides of the lower end are further reduced as the underfill resin 205 is further supplied, and the air remaining from the gap S2 is pushed right and left by the underfill resin 205.

  Finally, as shown in FIG. 7E, the unfilled regions on both sides of the lower end disappear before long, and the entire gap S2 is filled with the underfill resin 205. Thereafter, by heating the semiconductor device 200 in which the underfill resin 205 is filled in the gap S2, the filled underfill resin 205 is cured. The cured underfill resin 205 seals the gap S <b> 2 between the circuit board 201 and the semiconductor element 202.

  That is, when the underfill resin 205 is dropped from the vicinity of one side surface of the semiconductor element 202 using each nozzle 204, the central portion of the semiconductor element 202 is formed as shown in the unfilled region of FIG. The flowing underfill resin 205 first reaches the lower end of the gap S2. At this time, the underfill resin 205 flowing on the side surface of the gap S2 has not reached the lower end of the gap S2.

  Further, as the underfill resin 205 that has flowed through the central portion of the gap S2 and reached the lower end of the gap S2 is further filled, as shown in FIG. 7E, the left and right corners are not filled. Since the air remaining in the region is expelled to the left and right, the generation of voids can be prevented.

  Further, for example, when the chip size of the semiconductor element 202 is increased to, for example, about 15 mm or more, it is considered that the influence of the underfill resin 205 is large due to the rapid flow around the gap S2. . That is, since the chip size is large, the distance through which the underfill resin 205 flows is also increased. As a result, the influence of the difference in the easiness of flow between the central part and the side part of the semiconductor element 202 becomes large. Based on this, the underfill resin 205 that flows through the side portion reaches the lower end of the gap S2 earlier than the underfill resin 205 that flows through the center portion. As a result, there is a possibility that the air remaining in the gap S2 is caught in the underfill resin 205 via the side part that reaches the lower end of the gap S2 first, and voids are likely to occur.

  In this embodiment, even in such a case, the underfill resin 205 dripped from each nozzle 204 is provided by providing a difference in the distance from each nozzle 204 to the semiconductor element 202 with respect to the arrangement of the nozzles 204. This prevents the generation of voids by providing a difference in the timing at which the filling reaches the gap S2 and the filling is started, and the timing at which the underfill resin 205 flowing through the center reaches the lower end of the gap S2 is advanced. is there.

  In other words, both sides of the semiconductor element 202 that progresses quickly due to the early flow of the underfill resin 205 are disposed away from the nozzle 204, thereby delaying the timing of reaching the lower end of the gap S2 of the underfill resin 205. In addition, the central portion where the progress of the filling is relatively slow can be advanced so that the timing of the underfill resin 205 reaching the lower end of the gap S2 can be advanced by arranging the nozzle 204 closer.

  As described above, according to the multi-nozzle 250A of the present embodiment, by adjusting the timing at which the underfill resin 205 in each part of the side surface of the gap S2 between the circuit board 201 and the semiconductor element 202 reaches the lower end of the gap S2. Generation of voids due to entrainment of air in which the underfill resin 205 remains can be prevented.

  As described above, according to the second embodiment, in addition to the operation and effect of the first embodiment, with respect to the nozzle 204 provided in the multi-nozzle, one side surface of the gap between each nozzle 204 and the semiconductor element 202 By appropriately adjusting the distance and adjusting the timing at which the underfill resin 205 of each part on this side surface reaches the lower end of the gap, the generation of voids can be prevented more reliably. As a result, the connection strength by the solder bumps of the semiconductor device 200 and the heat buffering action by the underfill resin 105 can be improved, and a short circuit by the solder bumps melted by reheating can be prevented.

  The above merely shows the principle of the present invention. In addition, many modifications and changes can be made by those skilled in the art, and the present invention is not limited to the precise configuration and application shown and described above, and all corresponding modifications and equivalents may be And the equivalents thereof are considered to be within the scope of the invention.

Regarding the first embodiment and the second embodiment, the following additional notes are disclosed.
(Additional remark 1) The process of mounting a semiconductor element on the surface of a circuit board,
Filling the gap between the circuit board and the semiconductor element with a resin having fluidity;
Curing the resin filled in the gap;
With
In the step of filling the gap with the resin,
A method of manufacturing a semiconductor device, comprising: supplying the resin to the gap from a plurality of positions facing a side surface of the semiconductor element.

(Additional remark 2) The said several position is arranged in parallel with the side surface which the said semiconductor element opposes, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
(Supplementary Note 3) The plurality of positions are arranged so as to be separated from the side surface of the semiconductor element as the distance from the central portion of the side surface in a direction parallel to the opposing side surface of the semiconductor element increases. The manufacturing method of the semiconductor device of Additional remark 1.

(Additional remark 4) The manufacturing method of the semiconductor device of Additional remark 1 characterized by arrange | positioning a nozzle to each of these several positions, and supplying the said resin from the said each nozzle.
(Additional remark 5) The internal diameter of each nozzle arrange | positioned in these positions is the position where each said nozzle is arrange | positioned in the direction parallel to the side surface which the said semiconductor element opposes, and the center part of the said side surface. The method of manufacturing a semiconductor device according to appendix 4, wherein the method differs depending on the distance.

  (Additional remark 6) The internal diameter of each said nozzle becomes small as the distance of the position where each said nozzle is arrange | positioned in the said direction and the center part of the said side surface leaves | separates, The semiconductor of Additional remark 5 characterized by the above-mentioned Device manufacturing method.

  (Supplementary Note 7) The timing of supplying the resin from the plurality of positions depends on the distance between each position of the plurality of positions and the center of the side surface in a direction parallel to the opposing side surface of the semiconductor element. The method for manufacturing a semiconductor device according to appendix 1, wherein the manufacturing method is different.

  (Supplementary note 8) The semiconductor device according to supplementary note 7, wherein the timing of supplying the resin at each of the positions is delayed as the distance between the respective position and the central portion of the side surface increases in the direction. Manufacturing method.

(Additional remark 9) The said semiconductor element is flip-chip connected to the surface of the said circuit board by several solder bump, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.
(Additional remark 10) The said resin has thermosetting, The manufacturing method of the semiconductor device of Additional remark 1 characterized by the above-mentioned.

It is a plane schematic diagram explaining the nozzle and semiconductor device of 1st Embodiment. It is a cross-sectional schematic diagram explaining the nozzle and semiconductor device of 1st Embodiment. It is a figure explaining the multi-nozzle of 1st Embodiment. It is explanatory drawing which shows a mode that the underfill resin supplied from the nozzle in 1st Embodiment is filled. It is a mimetic diagram explaining a nozzle and a semiconductor device of a 2nd embodiment. It is a figure explaining the multi-nozzle of 2nd Embodiment. It is explanatory drawing which shows a mode that the underfill resin supplied from the nozzle in 2nd Embodiment is filled. It is a plane schematic diagram explaining the nozzle and semiconductor device of the conventional method. It is explanatory drawing which shows a mode that the underfill resin supplied from the nozzle in the conventional method is filled.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Semiconductor device 101 Circuit board 102 Semiconductor element 104 Nozzle

Claims (6)

Mounting a semiconductor element on the surface of the circuit board;
Filling the gap between the circuit board and the semiconductor element with a resin having fluidity;
Curing the resin filled in the gap;
With
In the step of filling the gap with the resin,
A plurality of positions opposed to the side surface of the semiconductor element and arranged so as to be separated from the side surface of the semiconductor element as the distance from the central portion of the side surface in a direction parallel to the opposite side surface of the semiconductor element increases. A method of manufacturing a semiconductor device, wherein the resin is supplied to the gap.   The method for manufacturing a semiconductor device according to claim 1, wherein nozzles are arranged at the plurality of positions, and the resin is supplied from the nozzles.   The inner diameter of each nozzle disposed at the plurality of positions is in accordance with the distance between the position at which each nozzle is disposed and the center of the side surface in a direction parallel to the opposite side surface of the semiconductor element. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the manufacturing method is different.   The timing of supplying the resin from the plurality of positions differs according to the distance between each position of the plurality of positions and the center of the side surface in a direction parallel to the opposing side surface of the semiconductor element. A method for manufacturing a semiconductor device according to claim 1.   Mounting a semiconductor element on the surface of the circuit board;
  Filling the gap between the circuit board and the semiconductor element with a resin having fluidity;
  Curing the resin filled in the gap;
  With
  In the step of filling the gap with the resin,
  The resin is supplied to the gap from a plurality of positions arranged in a direction parallel to the side surface of the semiconductor element, and the supply timing at each position becomes slower as the positions move away from the center of the side surface. The supply timing at the position of the central portion is earlier than the supply timing at any end position of the side surface.   6. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is inclined so that a supply side of the resin is higher.

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