JP5159749B2 - Semiconductor switching device - Google Patents

Description

  The present invention relates to a semiconductor switching device used for rotational speed control of a motor such as an inverter, an AC power source, and the like, as well as prevention of electrostatic breakdown and prevention of charging of a switching element used as a semiconductor switch.

  In general, a MOS device (such as a MOSFET or IGBT module) is charged between the gate and the emitter and causes electrostatic breakdown. Therefore, it is necessary to handle the ground band and prevent electrostatic breakdown. When transporting, a conductive sponge is attached between the gate and emitter to prevent electrification, but when the inverter is assembled, the conductive sponge is removed. It is necessary and the workability is poor and the equipment is expensive.

  In general, an IPM (Intelligent Power Module) equipped with a control IC also has a control terminal outside the module. If touched by hand, the internal IC may be damaged by static electricity. It is necessary to prevent electric breakdown.

  In any case, since it is necessary to connect the terminal of the module to the control terminal when assembling the inverter, it is difficult to completely take measures against static electricity. If an attempt is made to connect to the semiconductor switching device while energy is stored in the inverter unit (such as a capacitor on the control side), the contact may be sparked and destroyed. Since it is difficult to take measures for connecting semiconductor elements at the place where the inverter unit device is installed, it is necessary to replace the module at risk.

  In view of this problem, Patent Documents 1 and 2 disclose techniques for preventing insulation gate breakdown due to static electricity.

Japanese Patent Laid-Open No. 08-32022 JP 2003-332525 A

  In Patent Documents 1 and 2, a dedicated connector is required to prevent the breakdown of the insulated gate due to static electricity, and a dedicated shorting bar (or a dedicated shorting electrode) is provided. Necessary. In addition, since the gate and emitter are opened with the dedicated connector connected, there is a problem that the wiring connecting the inverter device and the MOS device breaks, and when repairing in that state, or the inverter device and the MOS When replacing the components of the drive circuit with the system devices connected, there is a problem that electrostatic breakdown cannot be prevented because the work is performed with the gate and emitter open.

  In view of the above-described problems, an object of the present invention is to provide a semiconductor switching device capable of preventing electrostatic breakdown at the time of assembly and thereafter.

The first semiconductor switching device of the present invention includes a switching element, a gate terminal and an emitter terminal for external control connection of the switching element, a gate metal pattern wired from the switching element to the gate terminal, and from the switching element to the emitter terminal. and a gate metal pattern and spaced wiring emitter metal pattern, comprising a housing containing the switching element, the gate metal pattern and the emitter metal pattern, the gate terminal by short aid, housing at a position other than the emitter terminal is freely configured shorted from outside the body, the gate metal pattern and the emitter metal pattern comprises a pin terminal which is exposed from the gate metal pattern and the emitter metal pattern to the outside of the housing, respectively, short aid, between pin terminals you short-circuit the.

The first semiconductor switching device of the present invention includes a switching element, a gate terminal and an emitter terminal for external control connection of the switching element, a gate metal pattern wired from the switching element to the gate terminal, and from the switching element to the emitter terminal. and a gate metal pattern and spaced wiring emitter metal pattern, comprising a housing containing the switching element, the gate metal pattern and the emitter metal pattern, the gate terminal by short aid, housing at a position other than the emitter terminal is freely configured shorted from outside the body, the gate metal pattern and the emitter metal pattern comprises a pin terminal which is exposed from the gate metal pattern and the emitter metal pattern to the outside of the housing, respectively, short aid, between pin terminals Short circuit . Thus, even when the gate terminal and the emitter terminal are connected to an inverter or the like, the gate metal can be short-circuited using the gate metal pattern and the emitter metal pattern, so that the device can be safely removed.

FIG. 3 is an internal connection diagram of the semiconductor switching device according to the first embodiment. 1 is a structural diagram of a semiconductor switching device according to a first embodiment. It is a figure which shows the structure which short-circuits the module external view of the semiconductor switching device of Embodiment 1, and a terminal. 3 is a diagram showing a structure for short-circuiting terminals of the semiconductor switching device according to the first embodiment; FIG. It is a figure which shows the structure which short-circuits the module external view of the semiconductor switching apparatus of Embodiment 2, and a terminal. It is a figure which shows the structure which short-circuits the module external view of the semiconductor switching apparatus of Embodiment 2, and a terminal. FIG. 6 is an internal connection diagram of the semiconductor switching device according to the third embodiment. It is a figure which shows the structure which short-circuits the module external view of the semiconductor switching device of Embodiment 3, and a terminal. FIG. 6 is a structural diagram of a semiconductor switching device according to a fourth embodiment and a diagram illustrating a structure in which terminals are opened.

(Embodiment 1)
<Configuration>
FIG. 1 is an internal connection diagram of an IGBT module of the semiconductor switching device according to the present embodiment. In the IGBT module for controlling the inverter circuit, the collector main terminal 3 is connected to the collector side of the IGBT chip 6, and the emitter signal terminal 2 for external control connection connected from the outside for control is connected to the emitter side of the module internal wiring. 21 and the emitter main terminal 4 is further connected. The gate terminal 1 for external control connection is connected to the gate side by a module internal wiring 11.

  In the case of inverter operation, there is a free wheel mode for controlling the motor (inductance), and a free wheel diode 7 is connected in parallel with the IGBT chip 6 in the reverse direction.

  Further, the IGBT module of the present embodiment includes a short-circuit emitter terminal E1 that is an external terminal different from the emitter signal terminal 2 and a short-circuit gate terminal G1 that is an external terminal different from the gate terminal 1. And The short-circuit emitter terminal E1 is drawn from the module internal wiring 21 connecting the emitter signal terminal 2, and the short-circuit gate terminal G1 is drawn from the module internal wiring 11 connecting the gate terminal 1. Then, the short-circuit emitter terminal E1 and the short-circuit gate terminal G1 are short-circuited by a short-circuit line 5 which is an example of a short-circuit auxiliary tool that can be easily removed or connected (short-circuit) from the outside of the module. A specific example of the short circuit method will be described in detail later.

  By providing such short-circuit terminals G1 and E1, the short-circuit state between the gate and the emitter can be easily maintained even after connection to the inverter circuit. Even when there is a break in the wiring or when the parts on the drive circuit board have to be replaced, the short circuit terminals G1 and E1 can be short-circuited with the inverter circuit and the semiconductor switching device connected, so that they are easily destroyed. Preventive measures can be taken.

  FIG. 2 is a structural diagram of the switching device of the present embodiment. The switching device includes an IGBT chip 61 and a freewheel diode chip 71 connected on the collector metal pattern 31. The collector metal pattern 31 is connected to the external collector main terminal 3. The surface of the IGBT chip 61 is connected by a metal wire, and is connected to the emitter metal pattern 41 via the surface of the freewheel diode chip 71. The emitter metal pattern 41 is connected to the emitter main terminal 4. Further, it is also connected to another emitter metal pattern 21 from the surface of the IGBT chip 61 and is connected to an external signal control emitter signal terminal 2. The gate pad on the surface of the IGBT chip 61 is connected to the gate metal pattern 11 by a metal wire, and the gate metal pattern 11 is connected to the external gate terminal 1. The gate metal pattern 11 and the emitter metal pattern 21 are short-circuited by a short-circuit line 51 which is an example of a short-circuit auxiliary tool. The short-circuit line 51 can be easily attached from the outside of the module.

  FIG. 3 is an external view of a module (a housing containing the IGBT chip 6) containing one element in the switching device of the present embodiment. The module includes a short-circuit gate terminal G1 and a short-circuit emitter terminal E1 connected to the gate terminal 1 and the emitter signal terminal 2 and the short-circuit emitter terminal E1, respectively. E1 has a structure that can be easily connected. In FIG. 3, the short-circuit gate terminal G1 and the short-circuit emitter terminal E1 are provided at one location on the upper part of the module. However, the same effect can be obtained by providing a plurality of these on the side surface of the module.

<Short-circuit method>
Next, a method for short-circuiting the short-circuit gate terminal G1 and the short-circuit emitter terminal E1 will be described. Various methods are conceivable as long as both terminals can be short-circuited from the outside of the module. For example, as shown in FIG. 3B, the gate metal bar 111 connected to the gate terminal 1 by the metal 511 and the emitter metal bar 211 connected to the emitter signal terminal 2 are sandwiched and short-circuited. The metal 511 has a spring shape and is devised so that the metal bars 111 and 211 can be easily sandwiched and removed. The gate metal bar 111 and the emitter metal bar 211 are covered with a case (housing), and a space for inserting the metal 511 from the outside of the case is secured in the case.

That is, the semiconductor switching device of the present embodiment includes a switching element, a gate terminal 1 and an emitter (signal) terminal 2 for external control connection of the switching element, and a gate metal bar 111 wired from the switching element to the gate terminal 1. (Gate metal pattern) and an emitter metal bar 211 (emitter metal pattern) wired from the switching element to the emitter signal terminal 2. The gate metal bar 111 and the emitter metal bar 211 are the gate terminal 1 and the emitter signal terminal. It is configured to be short-circuited / opened from the outside at positions other than 2. Further, the gate metal bar 111 and the emitter metal bar 211 are configured to be short-circuited from the outside by a short-circuit auxiliary tool (for example, metal 511). Thereby, the gate terminal 1 and the emitter signal terminal 2
Can be short-circuited / opened between the gate and emitter by short-circuiting / opening the metal bars 111, 211 even when assembled with an inverter or the like. I can do it.

  As shown in FIG. 3C, pin terminals 112 and 212 protruding from the metal bars 111 and 211 to the upper part of the case may be formed, and the pin terminals 112 and 212 may be short-circuited with metal. Further, it is possible to connect components (capacitor, chenner diode, etc.) using the pin terminals 112 and 212.

  That is, the gate metal bar 111 and the emitter metal bar 211 include pin terminals 112 and 212 exposed to the outside of the device, respectively. Also with such a configuration, the pin terminals 112 and 212 can be easily short-circuited from the outside of the module, and the gate and emitter can be short-circuited / opened.

  Alternatively, as shown in FIG. 3D, grooves 113 and 213 are formed in the metal bars 111 and 211, and holes are provided in the case of the semiconductor switching device so that the short-circuit case 513 can be inserted into the grooves 113 and 213. The short-circuit case 513 is provided with a metal part 513a at the lower part, and the metal part 513a and the metal bars 111, 211 are connected and short-circuited by inserting the short-circuit case 513 into the grooves 113, 213. The portion other than the metal portion 513a of the short-circuit case 513 is made of an insulator, and the metal bars 111 and 211 are opened when the short-circuit case 513 is inserted from the opposite direction, and the holes provided in the case of the apparatus are covered with the lids. It becomes the composition to do.

  That is, the gate metal bar 111 and the emitter metal bar 211 are grooved, and the gate metal bar 111 and the emitter metal bar 111 are short-circuited by inserting the short-circuit case 513 (short-circuit auxiliary tool) into the grooves 113 and 213. The By inserting the short-circuit case 513, the gate-emitter can be easily short-circuited, and the short-circuit portions of the metal bars 111 and 211 are not exposed to the outside of the apparatus, so that dirt and dust can be prevented from adhering.

  Further, as shown in FIG. 3E, the short-circuit case 514 slides on the gate metal pattern 114 connected to the gate terminal 1 and the emitter metal pattern 214 connected to the emitter signal terminal 2, thereby short-circuiting the two. It is good also as a structure. The lower surface of the short-circuit case 514, that is, the surface in contact with the metal patterns 114 and 214 is covered with a metal foil or the like and has conductivity. The short-circuit case 514 can be slid across the metal patterns 114 and 214 from the outside of the apparatus. When the short-circuit case 514 straddles both the metal patterns 114 and 214, the metal patterns 114 and 214 are short-circuited. It is opened at the position of.

  That is, the gate metal pattern 114 and the emitter metal pattern 214 are arranged in parallel at a predetermined interval, and the short-circuit case 514 (short-circuit auxiliary tool) slides across the metal pattern, so that the gate metal pattern 114 and the emitter metal pattern 214 are It is configured to be short-circuited. Even with such a configuration, the short circuit / opening between the gate and the emitter can be easily performed.

  Alternatively, as shown in FIG. 3 (f), a gate metal cylinder 115 may be formed on the gate metal pattern 114 and an emitter metal cylinder 215 may be formed on the emitter metal pattern 214. The metal cylinders 115 and 215 protrude to the outside of the apparatus, and switching between short circuit / opening is possible by extracting the metal 515 from the metal cylinders 115 and 215.

  That is, the gate metal pattern 114 and the emitter metal pattern 214 include metal cylindrical terminals (metal cylinders) 115 and 215 that are exposed to the outside of the device. Even with such a configuration, the short circuit / opening between the gate and the emitter can be easily performed.

  In addition, by sliding the conductor short-circuit case 516 sandwiched between the protrusions of both the wirings 116 and 216 in parallel with the gate metal wiring 116 connected to the gate terminal 1 and the emitter metal wiring 216 connected to the emitter signal terminal 2. Miniaturization can be realized. The short-circuit case 516 is configured to be operable from outside the apparatus. In Fig.4 (a), the left figure shows the short circuit state, and the right figure shows the open state.

  That is, the gate metal wiring 116 (gate metal pattern) and the emitter metal wiring 216 (emitter metal pattern) are arranged in parallel at a predetermined interval, and the short-circuit case 516 (short-circuit auxiliary tool) is parallel to the direction of the metal wirings 116 and 216 therebetween. The gate metal wiring 116 and the emitter metal wiring 216 are short-circuited by sliding to. Thereby, the short circuit / opening between the gate and the emitter can be easily performed from the outside, and the space is further saved.

  Alternatively, the short-circuiting case 517 may be disposed between the gate metal wiring 116 and the emitter metal wiring 216 and rotated to switch the short-circuit / opening of the metal wirings 116 and 216 according to the direction. In FIG. 4B, the left figure shows a short circuit state, and the right figure shows an open state. The short-circuit case 517 includes an insulator region and a hatched conductor region in the drawing, and is short-circuited when the gate metal wiring 116 and the emitter metal wiring 216 are connected by the conductor region of the short-circuit case 517.

  That is, the short-circuit case 517 (short-circuit auxiliary tool) disposed between and in contact with the gate metal wiring 116 and the emitter metal wiring 216 rotates, so that the gate metal wiring 116 and the emitter metal wiring 216 are short-circuited and opened. It is set as the structure which switches. Thereby, the short circuit / opening between the gate and the emitter can be easily performed from the outside, and the space is further saved.

<Effect>
According to the semiconductor switching device of the present embodiment, the following effects can be obtained as described above. That is, the semiconductor switching device of the present embodiment includes a switching element, a gate terminal 1 and an emitter (signal) terminal 2 for external control connection of the switching element, and a gate metal bar 111 wired from the switching element to the gate terminal 1. (Gate metal pattern) and an emitter metal bar 211 (emitter metal pattern) wired from the switching element to the emitter signal terminal 2. The gate metal bar 111 and the emitter metal bar 211 are the gate terminal 1 and the emitter signal terminal. It is configured to be short-circuited / opened from the outside at positions other than 2. As a result, even when the gate terminal 1 and the emitter signal terminal 2 are assembled and connected to an inverter or the like, the gate and the emitter can be short-circuited / opened by short-circuiting / opening the metal bars 111, 211. And can take countermeasures against electrostatic breakdown.

  Further, the gate metal bar 111 and the emitter metal bar 211 are configured to be short-circuited from the outside by a short-circuit auxiliary tool (for example, metal 511). Thereby, the short circuit / opening between the gate and the emitter can be easily performed from the outside using the short circuit auxiliary tool.

  Alternatively, the gate metal bar 111 and the emitter metal bar 211 include pin terminals 112 and 212 that are exposed to the outside of the device. Also with such a configuration, the pin terminals 112 and 212 can be easily short-circuited from the outside of the module, and the gate and emitter can be short-circuited / opened.

  Alternatively, the gate metal bar 111 and the emitter metal bar 211 are grooved, and the gate metal bar 111 and the emitter metal bar 111 are short-circuited by inserting a short-circuit case 513 (short-circuit auxiliary tool) into the grooves 113 and 213. The By inserting the short-circuit case 513, the gate-emitter can be easily short-circuited, and the short-circuit portions of the metal bars 111 and 211 are not exposed to the outside of the apparatus, so that dirt and dust can be prevented from adhering.

  Alternatively, the gate metal pattern 114 and the emitter metal pattern 214 are arranged in parallel at a predetermined interval, and the short-circuit case 514 (short-circuit auxiliary tool) slides across the metal pattern, so that the gate metal pattern 114 and the emitter metal pattern 214 are It is configured to be short-circuited. Even with such a configuration, the short circuit / opening between the gate and the emitter can be easily performed.

  Alternatively, the gate metal pattern 114 and the emitter metal pattern 214 include metal cylindrical terminals 115 and 215 that are exposed to the outside of the device. Even with such a configuration, the short circuit / opening between the gate and the emitter can be easily performed.

  Alternatively, the gate metal wiring 116 (gate metal pattern) and the emitter metal wiring 216 (emitter metal pattern) are arranged in parallel at a predetermined interval, and a short-circuit case 516 (short-circuit auxiliary tool) is parallel to the direction of the metal wirings 116 and 216 therebetween. The gate metal wiring 116 and the emitter metal wiring 216 are short-circuited by sliding to. Thereby, the short circuit / opening between the gate and the emitter can be easily performed from the outside, and the space is further saved.

  Alternatively, a short-circuit case 517 (short-circuit auxiliary tool) disposed between and in contact with the gate metal wiring 116 and the emitter metal wiring 216 rotates, so that the gate metal wiring 116 and the emitter metal wiring 216 are short-circuited and opened. It is set as the structure which switches. Thereby, the short circuit / opening between the gate and the emitter can be easily performed from the outside, and the space is further saved.

(Embodiment 2)
<Configuration>
In the first embodiment, the gate terminal G1 and the emitter terminal E1 for short-circuiting are provided separately from the gate terminal 1 and the emitter signal terminal 2. On the other hand, in this embodiment, by devising the part (terminal conductor part) that performs the original function of the gate terminal 1 and the emitter signal terminal 2 of the module shown in FIG. A short-circuiting part is provided separately from the attachment part. A plurality of short-circuit locations may be provided.

  FIGS. 5B to 5F are enlarged views of the dotted line portion B of FIG. 5A as viewed from above. For example, the lengths of the gate terminal 101 and the emitter signal terminal 201 shown in FIG. 5B are increased, and a hole for attaching the short-circuit metal conductor 518 with a screw is provided separately from the gate terminal 101 for external control connection. This structure is used as a short-circuit gate terminal. Similarly, the emitter signal terminal 201 is formed with a short-circuit emitter terminal.

  That is, the semiconductor switching device of the present embodiment includes a gate terminal 101 for external control connection, a short-circuit gate terminal formed on the same terminal portion conductor as the gate terminal 101, and an emitter (signal) for external control connection. The terminal 201 and a short-circuit emitter terminal formed on the same terminal portion conductor as the emitter signal terminal 201 are provided, and the short-circuit emitter terminal and the short-circuit gate terminal can be short-circuited from the outside. Since the short-circuiting terminal can be short-circuited / opened independently of the external control connection terminal, for example, when transporting or attaching to the equipment, the short-circuiting terminal is short-circuited to implement countermeasures against static electricity. By connecting the terminals 101 and 201 and opening the short-circuiting terminal, it is possible to easily take measures against static electricity until the device is attached.

  Alternatively, as shown in FIG. 5C, by attaching a metal conductor screw 519 between the gate terminal 101 having a longer length and the emitter signal terminal 201, the head of the metal conductor screw 519 is attached to both terminals 101 and 201. It can straddle and short circuit. A hole 521 may be formed in the module case so as to be positioned between the gate terminal 101 and the emitter signal terminal 201, and a metal conductor screw 519 may be screwed through the hole 521 (FIG. 5D).

  In other words, the short-circuit emitter terminal and the short-circuit gate terminal are configured such that the metal conductor screw 519 is in contact with the short-circuit emitter terminal and the short-circuit gate terminal from the hole 521 provided in the module case (housing) containing the switching element. Shorted by screwing. Since it can be easily short-circuited simply by screwing the metal conductor screw 519, countermeasures against static electricity are easy.

  Further, as shown in FIG. 5E, the gate terminal 101 and the emitter signal terminal 201 may be grooved so that a metal conductor screw 519 can be screwed between them.

  That is, the short-circuit emitter terminal and the short-circuit gate terminal are exposed to the outside of the apparatus, and the metal conductor screw 519 is screwed into the screw hole provided so as to span both the short-circuit emitter terminal and the short-circuit gate terminal. The short-circuit emitter terminal and the short-circuit gate terminal are short-circuited. Since the metal conductor screw 519 is screwed directly into the short-circuit emitter terminal and the short-circuit gate terminal, the short-circuit state is reliably realized.

  Alternatively, as shown in FIG. 5 (f), the gate terminal 101 and the emitter signal terminal 201 having a long length are cut and a metal wire or the like is wound around the cut, or both terminals 101 and 201 are cut. The two terminals 101 and 201 may be short-circuited by making a hole penetrating through and inserting a metal pin 520 or the like into the hole. Moreover, you may short-circuit by sticking a conductive tape.

  That is, when the metal rod penetrates the short-circuit emitter terminal and the short-circuit gate terminal, the short-circuit emitter terminal and the short-circuit gate terminal are short-circuited. Alternatively, the short-circuit emitter terminal and the short-circuit gate terminal are grooved, and a metal wire is wound around the groove to short-circuit the short-circuit emitter terminal and the short-circuit gate terminal. Even with such a configuration, a short circuit between the gate and the emitter can be easily performed from the outside of the apparatus.

  Note that the above technique can also be applied to a module having two elements as shown in FIG. 6A and a structure in which a plurality of other elements are one module. FIGS. 6B to 6E are enlarged views of the dotted line portion C in FIG. 6A. For example, as shown in FIG. 6B, the gate metal bar (gate terminal) 102 and the emitter metal In each of the bars (emitter signal terminals) 202, a portion to be attached to an inverter or the like and a short-circuit portion are exposed at the top of the module. Further, when short-circuiting with a metal wire or a metal pin, the short-circuit portion can be made small as shown in FIG. Further, as shown in FIGS. 6D and 6E, the gate terminal 102 and the emitter signal terminal 202 can be short-circuited with screws from the outside of the module. Note that what is short-circuited is not limited to a screw, but may be a conductor.

  That is, the semiconductor switching device of the present embodiment includes a switching element, a gate terminal 102 and an emitter signal terminal 202 for external connection of the switching element, and the gate terminal 102 and the emitter signal terminal 202 are parts other than the part to be externally connected. With a metal screw or metal rod (short-circuit auxiliary tool), it can be short-circuited from outside the device. Even with such a configuration, a short circuit between the gate and the emitter can be easily performed from the outside of the apparatus.

<Effect>
According to the semiconductor switching device of the present embodiment, the following effects can be obtained as described above. In other words, the short-circuit emitter terminal and the short-circuit gate terminal are configured such that the metal conductor screw 519 is in contact with the short-circuit emitter terminal and the short-circuit gate terminal from the hole 521 provided in the module case (housing) containing the switching element. Shorted by screwing. Since it can be easily short-circuited simply by screwing the metal conductor screw 519, countermeasures against static electricity are easy.

  Alternatively, the short-circuit emitter terminal and the short-circuit gate terminal are exposed to the outside of the device, and the metal conductor screw 519 is screwed into the screw hole provided so as to span both the short-circuit emitter terminal and the short-circuit gate terminal. The short-circuit emitter terminal and the short-circuit gate terminal are short-circuited. Since the metal conductor screw 519 is screwed directly into the short-circuit emitter terminal and the short-circuit gate terminal, the short-circuit state is reliably realized.

  Further, when the metal rod 520 penetrates the short-circuit emitter terminal and the short-circuit gate terminal, the short-circuit emitter terminal and the short-circuit gate terminal are short-circuited. Even with such a configuration, a short circuit between the gate and the emitter can be easily performed from the outside of the apparatus.

  Alternatively, the short-circuit emitter terminal and the short-circuit gate terminal are grooved, and a metal wire is wound around the groove to short-circuit the short-circuit emitter terminal and the short-circuit gate terminal. Even with such a configuration, a short circuit between the gate and the emitter can be easily performed from the outside of the apparatus.

  Alternatively, the semiconductor switching device of the present embodiment includes a switching element and a gate terminal 102 and an emitter signal terminal 202 for external connection of the switching element, and the gate terminal 102 and the emitter signal terminal 202 are parts other than the part to be externally connected. With a metal screw or metal rod (short-circuit auxiliary tool), it can be short-circuited from outside the device. Even with such a configuration, a short circuit between the gate and the emitter can be easily performed from the outside of the apparatus.

(Embodiment 3)
<Configuration>
FIG. 7 is an internal connection diagram of the semiconductor switching device according to the third embodiment. Since the semiconductor switching device of the third embodiment includes the IC 9 and the external control terminals 81 to 84 of the IC 9 are output to the outside of the module, a high voltage such as static electricity is applied to the external control terminals 81 to 84. IC9 may cause electrostatic breakdown. For this measure, the semiconductor switching device of the present embodiment is provided with shorting terminals 811.821, 831, 841 in addition to the control terminal of the IC 9, and the shorting terminals 811, 821, 831, 841 are provided from the outside of the module. Short-circuit with the short-circuit wire 5.

  FIG. 8A shows an external view of a module (IPM) of the semiconductor switching device according to the third embodiment. The external control terminals 81, 82, 83, 84 of the IC 9 are exposed from the upper part of the module together with the guide pins 85, 86 at both ends thereof.

  FIG. 8B is a view of the control terminal peripheral portion D of FIG. Each pattern in which the external control terminals 81, 82, 83, 84 of the IC 9 are formed is extended, and convex short-circuit terminals 811, 821, 831, 841 are formed at the ends thereof. FIG.8 (c) is the perspective view which showed what was represented to FIG.8 (b) in three dimensions. Since the convex short-circuit terminals 811, 821, 831, and 841 protrude outside the module, the external control terminals 81, 82, 83, and 84 are short-circuited by short-circuiting them from the outside of the module.

  That is, in the semiconductor switching device including the IC according to the present embodiment, the IC includes a plurality of control terminals 81, 82, 83, 84 for external control and a plurality of control terminals formed on the same conductor. Convex-shaped shorting terminals 811, 821, 831, 841 are provided, and the control terminals 81, 82, 83, 84 are short-circuited by short-circuiting the plurality of shorting terminals 811, 821, 831, 841 from the outside of the apparatus. . Since the IC control terminals 81, 82, 83, and 84 are open outside the apparatus, the IC may cause electrostatic breakdown. However, the IC is short-circuited separately from the control terminals 81, 82, 83, and 84. By short-circuiting using the terminals 811, 821, 831, and 841, it is possible to short-circuit until transportation or device mounting, and it is easy to take measures against static electricity.

  As shown in FIG. 8D, if the concave-shaped short-circuit terminals 812, 822, 832, and 842 are used, short-circuiting / opening from the outside of the module is facilitated by the convex-shaped short-circuit object 55.

  A configuration in which the external control terminal itself is directly short-circuited is also conceivable. For example, as shown in FIG. 8E, according to the short-circuit 56 provided with conductors corresponding to the number of external control terminals, the comb-shaped short-circuit 57 or the like, the external control terminals can be easily short-circuited / opened. It is possible to make a state.

<Effect>
According to the semiconductor switching device of the present embodiment, the following effects can be obtained as described above. That is, in the semiconductor switching device including the IC of the present embodiment, the IC includes a plurality of control terminals for external control, and a plurality of short-circuit terminals formed on the same conductor as each of the control terminals. The control terminal is short-circuited by short-circuiting a plurality of short-circuit terminals from the outside. Since the IC control terminal is open outside the device, there is a possibility that the IC may be electrostatically damaged. By short-circuiting with a short-circuiting terminal other than the control terminal, the IC can be transported or installed. It can be short-circuited and easy to prevent static electricity.

  Further, the shorting terminals 811, 821, 831, 841 have a convex shape. Even with such a configuration, it is possible to easily take measures against static electricity.

  Alternatively, the shorting terminals 812, 822, 832, and 842 have a concave shape. Thereby, short-circuiting / opening from the outside of the module is easy by the convex-shaped short-circuiting object 55.

(Embodiment 4)
<Configuration>
In the semiconductor switching devices of the first to third embodiments, the gate-emitter in the open state or the external control terminal of the IC is short-circuited, but in the semiconductor switching device of the present embodiment, the semiconductor short-circuited by the short-circuited object It is possible to open the switching device from the outside of the device.

  FIG. 9A is a structural diagram of the semiconductor switching device of the present embodiment, which is similar to the structural diagram of the semiconductor switching device shown in the first embodiment. However, although the short metal line 51 short-circuits the gate metal pattern 11 and the emitter metal pattern 21, it can be easily removed from the outside of the module with an opening aid to open the gate and emitter.

  FIG. 9B specifically shows the configuration of the periphery E of the short-circuited object 51 in FIG. In an initial state, the gate terminal wiring 117 and the emitter terminal wiring 217 are in a short-circuited state, but the gate terminal wiring 117 and the emitter terminal wiring that are short-circuited by screwing an insulating screw 501 (opening aid) from the outside of the module. 217 separates and opens. If the insulating screw 501 is removed, the gate terminal wiring 1178 and the emitter terminal wiring 217 come into contact again to return to the short circuit state. In this way, countermeasures against static electricity can be easily taken by screwing the insulating screw 501 only when performing semiconductor operation to open the gate-emitter and keeping the other short-circuited. In addition, what is used here should just be an insulating material instead of the insulating screw 501.

<Effect>
The semiconductor switching device according to the present embodiment has the following effects. That is, in the semiconductor switching device of the present embodiment, the gate terminal wiring 117 (gate metal pattern) and the emitter terminal wiring 217 (emitter metal pattern) are opened from the outside of the device by the insulating screw 501 (opening aid). Is possible. Only when the semiconductor operation is performed, the insulating screw 501 is screwed to open the gate-emitter, and the other is kept short-circuited, so that countermeasures against static electricity can be easily made.

  1, 101, 102 Gate terminal, 2, 201, 202 Emitter signal terminal, 3 Collector main terminal, 4 Emitter main terminal, 5, 51 Short circuit wire, 6, 61 IGBT chip, 7, 71 Freewheel diode, 9 IC 11 Gate metal wiring, 21 Emitter metal wiring, 31 Collector metal wiring, 41 Emitter metal wiring, 56, 57 Short-circuited object, 81, 82, 83, 84 External control terminal, 85, 86 Guide pin, 111 Gate metal bar, 112 , 212 pin terminal, 113, 213 groove, 114 gate metal pattern, 115, 215 metal cylinder, 116, 117 gate metal wiring, 211 emitter metal bar, 214 emitter metal pattern, 216, 217 emitter metal wiring, 501 insulation screw, 511 , 515 Metal, 516,5 17 Case, 518 metal, 519 screw, 520 pin, 521, 522 hole, 811, 812, 821, 822, 831, 832, 841, 842 Short-circuit terminal.

Claims (1)

A switching element;
A gate terminal and an emitter terminal for external control connection of the switching element;
A gate metal pattern wired from the switching element to the gate terminal;
An emitter metal pattern wired away from the gate metal pattern from the switching element to the emitter terminal;
A housing containing the switching element ,
The gate metal pattern and the emitter metal pattern are configured to be freely short-circuited from the outside of the housing at a position other than the gate terminal and the emitter terminal by a short-circuit auxiliary tool ,
The gate metal pattern and the emitter metal pattern each include a pin terminal exposed to the outside of the housing from the gate metal pattern and the emitter metal pattern,
The short-circuit auxiliary tool short-circuits between the pin terminals ,
Semiconductor switching device.

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