JP5151748B2 - Data creation method, data creation apparatus, and pattern drawing method - Google Patents

Description

  The present invention relates to a data creation method, a data creation device, and a pattern drawing method.

  Conventionally, in a process step of manufacturing a semiconductor device, wafer exposure processing is performed by a step-and-repeat method using a stepper. As shown in FIG. 20, the photomask 1 is mounted on a stepper (not shown), sequentially moved to a predetermined shot position, and an exposure process is performed on the wafer surface. Exposure patterns 2a to 2d are sequentially exposed on the wafer surface. Is done.

In a process step of a semiconductor device, formation of a fine pattern is required. For this reason, it is required to form a fine pattern even in a photomask for exposing a semiconductor device pattern onto a resist film formed on a wafer. A drawing method for the purpose of reducing the time (throughput) for forming a fine pattern and creating a photomask has been proposed (see, for example, Patent Document 1).
JP 2003-77821 A

  By the way, in the photomask, a light shielding layer such as a chromium film and a resist layer are formed on a transparent substrate such as quartz, the resist layer is exposed by an electron beam, and the resist layer is developed to form a desired pattern on the resist layer. Thereafter, the light shielding layer is etched to form an opening corresponding to the pattern of the semiconductor device. Charges are accumulated in the light-shielding layer by the electron beam, and there is a problem that the position accuracy of the resist layer to which the electron beam for forming a fine pattern reaches decreases due to the accumulated charges, that is, the pattern placement accuracy decreases. .

  An object of the data creation method, the data creation device, and the pattern drawing method is to enable high-precision drawing.

This data creation method and data creation device is a method for creating drawing data for drawing a plurality of patterns on an object by a data generation device, wherein the first frame layout data including the plurality of patterns is Dividing the second frame layout data including a pattern having a drawing area larger than the threshold area into third frame layout data including a pattern having a drawing area equal to or less than the threshold; and the third frame. A step of setting a correction region necessary for proximity effect correction for a pattern included in layout data, a step of extracting a pattern included in the correction region from a pattern included in the second frame layout data, and the step The extracted pattern overlaps with the pattern included in the second frame layout data. As described above, the step of changing the shape of the pattern included in the second frame layout data and generating the fourth frame layout data including the changed pattern, and the pattern included in the extracted correction area, Generating fifth frame layout data by combining the patterns included in the third frame layout data, and converting the fourth frame layout data and the fifth frame layout data into drawing data, respectively. And executing a proximity effect correction process on the pattern included in the fifth frame layout data .

  According to this data creation method and data creation apparatus, a pattern having a drawing area larger than the threshold area and a pattern having a drawing area less than the threshold area can be drawn separately. By reducing the positional deviation, highly accurate drawing can be performed.

This pattern drawing method is a pattern drawing method for drawing a plurality of patterns on an object, and the first frame layout data including a plurality of the patterns is used as a second frame layout data including a pattern having a drawing area larger than a threshold area. And a step of dividing the frame layout data into third frame layout data including a pattern whose drawing area is equal to or smaller than the threshold, and correction necessary for proximity effect correction for the pattern included in the third frame layout data A step of setting a region, a step of extracting a pattern included in the correction region from a pattern included in the second frame layout data, and a pattern extracted in the step and included in the second frame layout data. In the second frame layout data, the pattern is not duplicated. A step of generating a fourth frame layout data including the changed pattern, a pattern included in the extracted correction area, and a pattern included in the third frame layout data. Generating fifth frame layout data obtained by combining the fourth frame layout data, converting the fourth frame layout data and the fifth frame layout data into drawing data, respectively, and including them in the fifth frame layout data A step of executing proximity effect correction processing on the pattern, and a step of drawing a plurality of patterns on the object according to the drawing data.

  According to this pattern drawing method, by separating and drawing a pattern having a drawing area larger than the threshold area and a pattern having a drawing area equal to or less than the threshold area, by reducing the positional deviation of the pattern, High-precision drawing is possible.

  The disclosed data creation method, data creation apparatus, and pattern drawing method have an effect that high-precision drawing can be performed.

(First embodiment)
Hereinafter, a first embodiment will be described with reference to FIGS.
As shown in FIG. 1, the input device 11 of the data creation device 10 instructs the processing device (pattern generating means, area checking means, mark arranging means, pattern dividing means, manufacturing data converting means) 12 to perform various processing operations. Used for. The processing device 12 is connected to the storage devices 13 to 15.

  The storage device 13 stores pattern data (layout pattern data, hereinafter referred to as layout data) and reticle design information for forming a circuit of a semiconductor device (LSI). The layout data includes data on the shape and arrangement position of cells, wirings, vias, etc. that constitute the LSI. The reticle design information includes process specification information and reticle order information. The specification information includes a scribe width, a black and white image, mark arrangement coordinates, and the like.

  The storage device 13 includes library data. This library data includes shape data of wafer alignment marks and misalignment inspection marks (reticle set marks).

  The processing device 12 reads various data from the storage device 13 as necessary, and generates reticle drawing data for drawing a pattern in the exposure processing of the reticle 19 as an object for manufacturing an LSI. Then, the processing device 12 stores the generated reticle drawing data in the storage device 14. The processing device 12 stores the data generated during the processing for generating the reticle drawing data and temporary data in the storage device 15.

  The reticle drawing data generated by the data creation device 10 is supplied to the exposure device 18. The exposure apparatus 18 includes a light source that emits a charged beam for exposing the reticle 19, a shaping unit (variable slit) that shapes the shape of the beam emitted from the light source, an optical system that deflects the beam that has passed through the shaping unit, and a reticle. And a stage (both not shown) that can move along the holding surface. The reticle 19 includes a transparent substrate, a light shielding layer formed on one surface of the substrate, and a resist layer formed on the surface of the light shielding layer. For example, the transparent substrate is quartz glass, and the light shielding layer is a chromium film. The charged beam emitted from the light source exposes the resist layer and includes an electron beam, an ion beam, and the like.

  The exposure device 18 controls the optical system in accordance with the reticle drawing data to deflect the electron beam as a charged beam, and controls the stage position to move the transparent substrate. In this way, the exposure device 18 controls to expose the resist layer with the electron beam and form an exposure pattern according to the reticle drawing data.

Next, reticle creation processing will be described.
First, data creation processing by the data creation device 10 will be described.
The data creation device 10 generates reticle drawing data for drawing a pattern of the semiconductor device from the layout data according to the flowchart shown in FIG. 2 (device data creation processing). That is, the data creation device 10 converts the layout data 13a read from the storage device 13 into reticle drawing data (layout drawing data) 14a based on the order information 13b read from the storage device 13 shown in FIG. Step 21). Then, the data creation device 10 stores the reticle drawing data 14a after conversion in the storage device 14 of FIG. As shown in FIG. 4, the reticle drawing data 14a includes a device area 51 for drawing an LSI functional pattern. The functional pattern includes a diffusion region, a gate electrode, a wiring, a via for connecting the upper layer wiring and the lower layer wiring, and the like.

Next, the data creation device 10 creates reticle drawing data for drawing frame data according to the flowchart shown in FIG. 3 (frame data creation processing).
First, the data creation device 10 shown in FIG. 1 reads the order information 13b and the specification information 13c from the storage device 13, and generates scribe data for forming a scribe area of the chip in the exposure device (step 31). The scribe region is formed in a rectangular frame shape corresponding to information such as the outer shape of the chip, the number of impositions, and the dicing width.

  Next, the data creation device 10 generates mark arrangement information based on the specification information (step 32). The mark includes a wafer alignment mark and a reticle set mark. The data creating apparatus 10 arranges the wafer alignment mark in the scribe area, and arranges the reticle set outside the scribe area.

  Next, based on the order information, the data creation device 10 generates light shielding band data to be arranged outside the scribe area (step 33). The shading band prevents double exposure due to light leakage between adjacent shots when a functional pattern of an LSI formed on a reticle by a wafer exposure apparatus such as a stepper is transferred to the wafer by a step-and-repeat method. Then, the data creation device 10 determines the presence or absence of interference between the created shading band and the mark or the like. If there is no interference, the process proceeds to the next step. Punching process is performed. For example, the data creation device 10 changes the shape of the light shielding band so as to remove the interfering area from the light shielding band. Then, the data creation device 10 stores the frame layout data including the generated scribe area, mark, and shading band data in the storage device 15 of FIG.

  As shown in FIG. 5, the frame layout data 15 a stored in the storage device 15 has a rectangular frame-shaped scribe area 52, and a wafer alignment mark 53 is arranged in the scribe area 52. The wafer alignment mark 53 includes an alignment mark made of a fine pattern for aligning the wafer, and an inspection mark made of a fine pattern for inspecting the displacement of the mask. For this reason, in FIG. 5 etc., it has shown as an area | region which forms a fine pattern.

  In the present embodiment, two wafer alignment marks 53 are arranged in the scribe area 52, and the marks 53 have the same width as the scribe area 52. Therefore, by removing an area where the scribe area 52 and the mark 53 interfere with each other from the scribe area 52, the scribe area 52 is divided into two light shielding bands 52a and 52b by the two marks 53.

  A reticle set mark 54 is arranged outside the scribe area 52. A rectangular frame-shaped light shielding band 55 is formed outside the scribe region 52. The mark 54 is composed of a fine pattern for alignment, and an area where the fine pattern is formed is shown as an outer shape of the mark 54 in FIG.

Then, by removing the region where the light shielding band 55 and the mark 54 interfere with each other from the light shielding band 55, the light shielding band 55 having a concave portion at a predetermined position on the outer periphery is formed.
The light shielding bands 52a and 52b and the light shielding band 55 are areas where the resist layer formed on the wafer is not exposed, that is, areas where the shot light is shielded in the exposure process. The marks 53 and 54 are regions in which the resist layer is exposed with shot light corresponding to the shape. Accordingly, in the scribe region 52, the region excluding the mark 53 (52a, 52b) and the region excluding the mark 54 in the light shielding band 55 are irradiated with the shot light so that the shot light does not reach the resist layer formed on the wafer in the exposure process. It becomes a light shielding region for shielding light.

Next, the data creation device 10 calculates each pattern area included in the frame layout data 15a. Then, the data creation device 10 compares the area of each pattern with a predetermined threshold area (for example, 25 mm ² (= 5 mm × 5 mm)) to determine whether or not there is a pattern having an area larger than the threshold area. Judgment is made and a corresponding pattern is extracted (step 34). The threshold area is set according to the required accuracy of a drawing machine and reticle that draws a pattern on the reticle.

  In the case of the frame layout data 15a shown in FIG. 5, since the scribe area 52 (light shielding bands 52a and 52b) and the light shielding band 55 correspond, the data creation apparatus 10 extracts the scribe area 52 and the light shielding band 55 as corresponding patterns. Then, the data creation device 10 stores the frame layout data 15b including the data of the extracted pattern (the scribe area 52 and the light shielding band 55) in the storage device 15 of FIG. Accordingly, the frame layout data 15b includes a scribe region 52 and a light shielding band 55 as shown in FIG.

  Next, the data creation device 10 performs graphic logic processing on the extracted pattern and the pattern before extraction to extract a logical difference area, and stores frame layout data 15c including the extracted area data in FIG. Store in the device 15 (step 35). That is, the data creation device 10 extracts a portion (marks 53 and 54 in the present embodiment) where the pattern included in the frame layout data 15a and the pattern included in the frame layout data 15b do not overlap, and the extracted pattern is extracted. Including frame layout data 15c (see FIG. 6B) is generated.

  The reticle is formed by forming a light-shielding layer such as a chromium film and a resist layer on a transparent substrate such as quartz, exposing the resist layer with an electron beam, developing the resist layer, and forming a desired pattern on the resist layer. The light shielding layer is etched by using the layer as a mask. In the exposure step, charges are accumulated in the light shielding layer by an electron beam that exposes the resist layer. A pattern with a larger area has a larger amount of accumulated charge, and a larger amount of charge affects the path of the electron beam that draws the vicinity of the pattern, causing a shift in the exposure position. That is, a positional deviation of the pattern to be drawn is generated.

  For this reason, the threshold area is set so as not to cause a positional shift in the pattern or to be within an allowable range set in the order information. Then, the data creation device converts the frame layout data 15a including all the patterns into the frame layout data 15b including the pattern whose influence on the electron beam path is not less than a specified value, and the pattern whose influence on the electron beam path is less than the specified value. Is divided into frame layout data 15c including

  Next, the data creation device 10 converts the generated two frame layout data 15b and 15c into reticle drawing data 14b and 14c, respectively, and stores both drawing data 14b and 14c in the storage device 14 of FIG. Step 36).

Next, reticle drawing processing will be described.
As shown in FIG. 1, reticle drawing data 14 a to 14 c generated by the data creation device 10 is supplied to an exposure device 18.

  The exposure apparatus 18 generates composite drawing data 16 obtained by synthesizing reticle drawing data 14a of an LSI function pattern that requires high accuracy at the drawing position, and reticle drawing data 14c such as alignment marks and misalignment inspection marks (step). 41). As shown in FIG. 8, the composite drawing data 16 includes a device area 51, a wafer alignment mark 53, and a reticle set mark 54.

  Next, the exposure apparatus 18 controls the position of the electron beam in accordance with the generated drawing data 16 and draws a pattern corresponding to the drawing data 16 on the resist layer formed on the reticle (step 42). By this drawing process, a reticle 19a shown in FIG. 9 is created. On the reticle 19a, a device region 51 for forming an LSI functional pattern is formed. A wafer alignment mark 53 is formed outside the device region 51 and at a location to be a scribe region. Two reticle set marks 54 are formed at a predetermined interval.

  Next, the exposure apparatus 18 controls the position of the electron beam in accordance with the reticle drawing data 14b including the light-shielding region (scribe region 52 and light-shielding band 55) including a large area pattern with a low required drawing position accuracy, and the drawing data 14b A corresponding pattern is drawn on the resist layer formed on the reticle (step 43). By this drawing process, a reticle 19b shown in FIG. 10 is created. In the reticle 19b, a light shielding region 56 including a scribe region 52 and a light shielding band 55 is formed around the device region 51 so as not to overlap the marks 53 and 54.

As described above, according to the present embodiment, the following effects can be obtained.
(1) The data creation apparatus 10 creates reticle drawing data 14b and 14c by separating a pattern having a drawing area larger than the threshold area and a pattern having a drawing area less than the threshold area, respectively. The exposure device 18 draws a pattern on the reticle 19 by the electron beam L using the reticle drawing data 14b and 14c, respectively. Therefore, by reducing the positional deviation of the electron beam L due to the accumulated charges by the electron beam L, high-precision drawing can be performed.

  (2) The exposure apparatus 18 draws a pattern on the reticle 19 in accordance with the reticle drawing data 14c obtained by converting the data 15c including a pattern whose drawing area is equal to or smaller than the threshold area, and then draws a pattern whose drawing area is equal to or larger than the threshold area. A pattern is drawn on the reticle 19 in accordance with the reticle drawing data 14b obtained by converting the data 15b included. Therefore, since a fine pattern whose drawing area is equal to or smaller than the threshold area is drawn before a large area pattern whose drawing area is larger than the threshold area, it is affected by the accumulated charge of the large area pattern by the electron beam L. And a fine pattern can be drawn.

(Second embodiment)
Hereinafter, a second embodiment will be described with reference to FIGS.
11 and 12 are flowcharts of data creation processing in the present embodiment. This process is executed by the data creation device 10 shown in FIG. 1 as in the first embodiment.

  That is, as shown in FIG. 11, the data creation device 10 (processing device 12) converts the layout data 13a read from the storage device 13 into the reticle based on the order information 13b read from the storage device 13 shown in FIG. The drawing data (layout drawing data) 61a is converted (step 71). This manufacturing data conversion process includes a proximity effect correction process. When exposing two patterns arranged close to each other within a predetermined range (for example, 20 to 30 μm) on the resist film on the wafer, the light that has passed through the reticle interferes with each other, and the pattern width of the mask The pattern width exposed to the resist film changes. The proximity effect correction process corrects the pattern shape formed on the mask in accordance with the amount of change in the pattern shape due to light interference. That is, the data creation device 10 converts the layout data 13a into reticle drawing data 61a that takes into account the proximity effect correction amount. Then, the data creation device 10 stores the converted reticle drawing data 61a in the storage device 14 of FIG.

Next, the data creation device 10 creates reticle drawing data for drawing frame data according to the flowchart shown in FIG. 12 (frame data creation processing).
First, the data creation device 10 generates frame layout data 15a to 15c as in the first embodiment.

  That is, the data creation device 10 reads the order information 13b and the specification information 13c from the storage device 13, and generates a scribe region for shielding the scribe region of the chip in the exposure device (step 81). Next, the data creation device 10 generates mark arrangement information based on the specification information (step 82). Next, the data creation device 10 generates light shielding band data arranged outside the scribe area based on the order information (step 83). Then, the data creation device 10 stores the frame layout data including the generated scribe area, mark, and shading band data in the storage device 15 of FIG.

  Next, the data creation device 10 calculates each pattern area included in the frame layout data 15a, and compares the calculated area of each pattern with a predetermined threshold area, thereby obtaining a threshold area or more. The presence or absence of a pattern having an area is determined, and the corresponding pattern is extracted (step 84). Then, the data creation device 10 stores the frame layout data 15b including the extracted pattern data in the storage device 15 of FIG.

  Next, the data creation device 10 performs graphic logic processing on the extracted pattern and the pattern before extraction to extract a logical difference region, and the layout data 15c including the extracted region data is stored in the storage device of FIG. 15 (step 85).

  Next, the data creation device 10 takes out the area frames of the marks 53 and 54 from the frame layout data 15c (step 86). Next, the data creation device 10 creates a correction area necessary for cutting out a pattern necessary for the proximity effect correction process from the pattern adjacent to the marks 53 and 54 using the area frame (step 87).

  The shape of the pattern included in the marks 53 and 54 formed on the reticle is between the light passing through the pattern of the marks 53 and 54 and the light passing through the light shielding bands 52a, 52b and 55, similarly to the LSI functional pattern. Changes due to interference. Therefore, correction processing similar to that of the above-described LSI functional pattern is required for the pattern included in the marks 53 and 54 formed on the reticle. The proximity correction process requires a pattern adjacent to the pattern of the marks 53 and 54, that is, a pattern adjacent to the marks 53 and 54. A region including a necessary pattern corresponds to a pattern interval (for example, 20 to 30 μm) that requires proximity correction processing. Therefore, in the present embodiment, a predetermined range of patterns including a pattern to be subjected to the proximity correction process is included in the light shielding bands 52a. In order to cut out from 52b and 55, as shown in FIG. 13, correction areas 101 and 102 having outer shapes obtained by enlarging the area frames of the marks 53 and 54 on both sides in the axial direction by a numerical value within a predetermined range are generated.

  Next, the data creation device 10 performs a graphic AND operation process on the correction areas 101 and 102 and the light shielding bands 52a, 52b, and 55, so that the correction areas 101 and 102 and the light shielding bands 52a, 52b, and 55 overlap. The pattern is taken out from the light shielding bands 52a, 52b, and 55 (step 88).

  As shown in FIG. 13, the portions where the light-shielding bands 52a, 52b, 55 indicated by two-dot chain lines overlap with the correction areas 101, 102 are corrected by the figure logical product operation process, as shown in FIG. 104 is taken out. The data creation device 10 stores the frame layout data 15d including the correction effective areas 103 and 104 in the storage device 15 in FIG.

  Then, the shape of the light shielding bands 52a, 52b, 55 is changed so that the correction effective areas 103, 104 and the light shielding bands 52a, 52b, 55 do not overlap. That is, the data creation device 10 performs a graphic logical difference calculation process on the correction effective areas 103 and 104 from the light shielding bands 52a, 52b, and 55, and includes a light shielding band 105 having a final large area pattern as shown in FIG. Frame layout data 15e is generated (step 88). The data creation device 10 stores the frame layout data 15e in the storage device 15 in FIG.

  Next, the data creation device 10 synthesizes (logical sums) the frame layout data 15c including the marks 53 and 54 and the frame layout data 15d including the correction areas 101 and 102, as shown in FIG. The frame layout data 15f including the marks 53 and 54 and the correction effective areas 103 and 104 which are patterns for correcting the proximity effect of the high-precision pattern is generated (step 89). Then, the data creation device 10 stores the generated frame layout data 15f in the storage device 15 in FIG.

  Next, similarly to the layout data 13a shown in FIG. 11, the data creation device 10 converts the generated frame layout data 15e and 15f into reticle drawing data 61b and 61c that take into account the proximity effect correction amount, respectively. . Then, the data creation device 10 stores the reticle drawing data 61b and 61c after conversion in the storage device 14 of FIG. 1 (step 90).

The exposure apparatus 18 shown in FIG. 1 performs an exposure process and creates a reticle 19 as in the first embodiment.
That is, the exposure apparatus 18 combines the composite drawing data 16a (FIG. 17), which combines the reticle drawing data 61a of the LSI functional pattern that requires high precision in the drawing position, and the reticle drawing data 61c such as the alignment mark and the misalignment inspection mark. Reference) is generated (step 41). As shown in FIG. 17, the composite drawing data 16 a includes a device area 51, a wafer alignment mark 53, a reticle set mark 54, and correction effective areas 103 and 104. The exposure device 18 controls the position of the electron beam according to the generated drawing data 16a, and draws a pattern corresponding to the drawing data 16a on the resist layer formed on the reticle (step 42).

  Next, the exposure apparatus 18 controls the position of the electron beam in accordance with the reticle drawing data 61b of the light-shielding region 105, which is a large area pattern with a low required drawing position accuracy, and a resist in which a pattern corresponding to the drawing data 61b is formed on the reticle. Drawing on the layer (step 43).

As described above, according to the present embodiment, the following effects can be obtained.
(1) The data creation device 10 extracts the pattern of the area necessary for the correction process for the fine pattern that needs the proximity effect correction process, and performs the proximity effect correction process together with the fine pattern to create the reticle drawing data 61c. I did it. In addition, the data creating apparatus 10 creates the reticle drawing data 61b including the light shielding area 105 excluding the area necessary for the proximity effect correction process. Accordingly, since the fine pattern and the pattern necessary for the proximity effect correction process can be drawn on the reticle 19 separately from the light-shielding region 105 that is a large area pattern, accumulation by drawing of the light-shielding region 105 that is a large area pattern is possible. Since the electric charge does not affect the path of the electron beam L for drawing the fine pattern and the pattern necessary for the correction process, the fine pattern can be drawn with high accuracy.

In addition, you may implement each said embodiment in the following aspects.
In the embodiments described above, a large area pattern in which charge charging affects a path of an electron beam for drawing a pattern that requires positional accuracy may be divided into a plurality of patterns.

  As an example, the data creation apparatus 10 uses a plurality of frame-shaped light shielding bands as illustrated in FIG. 18 as a light shielding area 56 (scribe area 52 and light shielding band 55) (see FIG. 7A) in the first embodiment. The frame layout data 111 to 113 including the respective light shielding bands 56a to 56c are generated by being divided into 56a to 56c. The data creation device 10 may convert the frame layout data 111 to 113 into reticle drawing data.

  As another example, as shown in FIG. 19, the data creation device 10 has a predetermined pitch along the X-axis direction (lateral direction) and the Y-axis direction (longitudinal direction). A divided area 57 is generated. Then, the frame layout data 15b is divided into two frame layout data 121 and 122 so that the divided regions 57 are not adjacent in the axial direction.

  As described above, when the light shielding region 56 is divided, the area of the light shielding film corresponding to the pattern drawn by each divided region is smaller than when the light shielding region 56 is drawn at a time. Therefore, the charge charge amount in the light shielding film corresponding to the exposed resist film is reduced, and the influence on the path of the electron beam L for drawing other patterns can be reduced.

  Furthermore, by setting the division size (division width) to a range that can be drawn by deflecting the electron beam L in the exposure device 18 (field size: several μm to several mm), the drawing time due to unnecessary stage movement can be reduced. Increase can be prevented. For example, in FIG. 19, if the size of the divided area 57 is larger than the field size, the stage is drawn by the difference between the size of the divided area 57 and the field size (or one field size) after drawing the field size area. It must be moved to draw the remaining area. Therefore, the average value of the drawing area with respect to one movement is reduced, and the number of movements of the stage is increased, so that the drawing time is increased.

Similarly, a plurality of frame layout data each including an area obtained by dividing the light shielding area 105 (see FIG. 15) in the second embodiment may be created.
By dividing the light shielding region 56 as described above, the charge charge by the electron beam for drawing each of the divided regions 56a to 56c, 57 affects the path of the electron beam for drawing the pattern of the other region. If not given, the order of pattern drawing by each reticle drawing data may be arbitrarily changed.

  In each of the above-described embodiments, the data creation device 10 and the exposure device 18 are configured separately, but processing for creating reticle drawing data by one device and drawing a pattern on the reticle based on the created drawing data Processing may be performed.

  In the above embodiment, the exposure apparatus 18 combines the reticle drawing data 14a for forming an LSI functional pattern and the reticle drawing data 14c for drawing a mark or the like on the reticle, but both the data 14a and 14c are combined. The data generation apparatus 10 may perform the synthesis process.

  In each of the above embodiments, the exposure apparatus 18 creates drawing data obtained by synthesizing the reticle drawing data 14a for forming the LSI functional pattern and the reticle drawing data 14c for drawing a mark or the like on the reticle, The pattern was drawn on the resist layer of the reticle. The drawing data 14a and 14c may be drawn before the reticle drawing data 14b for drawing the pattern affecting the electron beam, and may be drawn without combining the drawing data 14a and 14c.

  In the above embodiments, frame layout data 15b and 15c are generated by dividing frame layout data 15a including all patterns. Then, a pattern included in the data 15a and a pattern extracted from the data 15a and included in the data 15b so that the pattern included in one data 15b and the pattern included in the other data 15c do not overlap. Graphic logic processing is performed, and data 15c including a processing result pattern is generated. These processes have a large influence on the path of the electron beam for drawing other exposure patterns, and a small influence on the path of a plurality of exposure patterns exposed on the reticle with an electron beam as a charged beam. What is necessary is just to be separable into a pattern. Therefore, a frame layout data 15b is generated by extracting a pattern whose drawing area is larger than the threshold area from the frame layout data 15a including all patterns, and the drawing area is equal to or smaller than the threshold area from the frame layout data 15a. The frame layout data 15c may be generated by extracting a pattern.

The following notes are disclosed regarding the above embodiments.
(Appendix 1)
A data creation method for creating drawing data for drawing a plurality of patterns on an object with a data creation device,
A first frame layout data including a plurality of the patterns; a second frame layout data including a pattern having a drawing area larger than a threshold area; and a third frame including a pattern having a drawing area equal to or less than the threshold. Dividing into layout data;
Respectively converting the second frame layout data and the third frame layout data into drawing data;
A data creation method characterized by comprising.
(Appendix 2)
The object includes a transparent substrate, a light shielding layer formed on one surface of the transparent substrate, and a resist layer on which an exposure pattern for patterning the light shielding layer is drawn,
The first frame layout data includes at least a mark for alignment and a light shielding band for shielding light outside the device region of the semiconductor device,
The second frame layout data includes the shading band,
The third frame layout data includes the mark;
The data creation method according to supplementary note 1, wherein:
(Appendix 3)
The step of dividing the data includes:
Extracting a pattern having a drawing area larger than a threshold area from the first frame layout data, and creating second frame layout data including the extracted pattern;
Creating third frame layout data including a pattern that does not overlap with a pattern included in the second frame layout data among patterns included in the first frame layout data;
The data creation method according to appendix 1 or 2, characterized by comprising:
(Appendix 4)
Setting a correction region necessary for proximity effect correction for a pattern included in the third frame layout data;
Extracting a pattern included in the correction area from a pattern included in the second frame layout data;
Change the shape of the pattern included in the second frame layout data so that the pattern extracted in the step and the pattern included in the second frame layout data do not overlap, and include the changed pattern Generating fourth frame layout data;
Generating fifth frame layout data obtained by synthesizing the pattern included in the extracted correction area and the pattern included in the third frame layout data;
Including
In the step of converting to the drawing data, the fourth frame layout data and the fifth frame layout data are each converted into drawing data, and a proximity effect correction process is performed on a pattern included in the fifth frame layout data. Performing the
The data creation method according to any one of appendices 1 to 3, characterized by:
(Appendix 5)
Divide the pattern included in the second frame layout data into multiple pieces along the vertical and horizontal directions, and create multiple frame layout data including each divided pattern so that adjacent divided patterns are not drawn continuously To do,
The data creation method as described in any one of the supplementary notes 1-4 characterized by these.
(Appendix 6)
A data generation device for creating drawing data for drawing a plurality of patterns on an object,
A first frame layout data including a plurality of the patterns; a second frame layout data including a pattern having a drawing area larger than a threshold area; and a third frame including a pattern having a drawing area equal to or less than the threshold value. Dividing into layout data;
Respectively converting the second frame layout data and the third frame layout data into drawing data;
A data creation device characterized by executing.
(Appendix 7)
A pattern drawing method for drawing a plurality of patterns on an object,
A first frame layout data including a plurality of the patterns; a second frame layout data including a pattern having a drawing area larger than a threshold area; and a third frame including a pattern having a drawing area equal to or less than the threshold value. Dividing into layout data;
Respectively converting the second frame layout data and the third frame layout data into drawing data;
Drawing the plurality of patterns on the object according to the drawing data;
A pattern drawing method comprising:
(Appendix 8)
Drawing the pattern on the object according to the drawing data obtained by converting the third frame layout data, and then drawing the pattern on the object according to the drawing data obtained by converting the second frame layout data. The pattern drawing method according to appendix 7.
(Appendix 9)
The object is a reticle for drawing a functional pattern of a semiconductor device on a substrate forming the semiconductor device,
Combining drawing data including a device area for drawing a functional pattern of the semiconductor device and drawing data obtained by converting the third frame layout data to generate composite drawing data, and the object according to the combined drawing data 9. The pattern drawing method according to appendix 7 or 8, wherein after drawing a pattern, the pattern is drawn on the object in accordance with drawing data obtained by converting the second frame layout data.

It is a schematic block diagram of a data preparation apparatus. It is a flowchart of a reticle creation process. It is a flowchart of a reticle creation process. It is explanatory drawing of layout pattern data. It is explanatory drawing of frame layout data. (A) (b) is explanatory drawing of frame layout data. (A) and (b) are explanatory drawings of reticle drawing data. It is explanatory drawing of the drawing data after a synthesis | combination. It is explanatory drawing of a reticle. It is explanatory drawing of a reticle. It is a flowchart of a reticle creation process. It is a flowchart of a reticle creation process. It is explanatory drawing of a correction | amendment area | region. It is explanatory drawing of an extraction area | region. It is explanatory drawing of the light-shielding area | region except the extraction area | region. It is explanatory drawing of the frame layout data after a synthesis | combination. It is explanatory drawing of the drawing data after a synthesis | combination. It is explanatory drawing of a data division process. It is explanatory drawing of a data division process. It is explanatory drawing which shows a step and repeat operation | movement.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Data preparation apparatus 11 Input apparatus 12 Processing apparatus 13-15 Storage apparatus 13a Layout data 14a-14c Reticle drawing data 15a-15c Frame layout data 18 Exposure apparatus 51 Device area 52 Scribe area 52a, 52b Shading zone 53 Wafer alignment mark 54 Reticle Set mark 55 Shading band 101, 102 Correction area

Claims (6)

A data creation method for creating drawing data for drawing a plurality of patterns on an object with a data creation device,
A first frame layout data including a plurality of the patterns; a second frame layout data including a pattern having a drawing area larger than a threshold area; and a third frame including a pattern having a drawing area equal to or less than the threshold. Dividing into layout data;
Setting a correction region necessary for proximity effect correction for a pattern included in the third frame layout data;
Extracting a pattern included in the correction area from a pattern included in the second frame layout data;
Change the shape of the pattern included in the second frame layout data so that the pattern extracted in the step and the pattern included in the second frame layout data do not overlap, and include the changed pattern Generating fourth frame layout data;
Generating fifth frame layout data obtained by synthesizing the pattern included in the extracted correction area and the pattern included in the third frame layout data;
Converting the fourth frame layout data and the fifth frame layout data into drawing data, and executing a proximity effect correction process on a pattern included in the fifth frame layout data;
A data creation method characterized by comprising. The object includes a transparent substrate, a light shielding layer formed on one surface of the transparent substrate, and a resist layer on which an exposure pattern for patterning the light shielding layer is drawn,
The first frame layout data includes at least a mark for alignment and a light shielding band for shielding light outside the device region of the semiconductor device,
The second frame layout data includes the shading band,
The third frame layout data includes the mark;
The data creation method according to claim 1. The step of dividing the data includes:
Extracting a pattern having a drawing area larger than a threshold area from the first frame layout data, and creating second frame layout data including the extracted pattern;
Creating third frame layout data including a pattern that does not overlap with a pattern included in the second frame layout data among patterns included in the first frame layout data;
The data creation method according to claim 1, wherein the data creation method comprises: A data generation device for creating drawing data for drawing a plurality of patterns on an object,
A first frame layout data including a plurality of the patterns; a second frame layout data including a pattern having a drawing area larger than a threshold area; and a third frame including a pattern having a drawing area equal to or less than the threshold value. Dividing into layout data;
Setting a correction region necessary for proximity effect correction for a pattern included in the third frame layout data;
Extracting a pattern included in the correction area from a pattern included in the second frame layout data;
Change the shape of the pattern included in the second frame layout data so that the pattern extracted in the step and the pattern included in the second frame layout data do not overlap, and include the changed pattern Generating fourth frame layout data;
Generating fifth frame layout data obtained by synthesizing the pattern included in the extracted correction area and the pattern included in the third frame layout data;
Converting the fourth frame layout data and the fifth frame layout data into drawing data, and executing a proximity effect correction process on a pattern included in the fifth frame layout data;
A data creation device characterized by executing. A pattern drawing method for drawing a plurality of patterns on an object,
A first frame layout data including a plurality of the patterns; a second frame layout data including a pattern having a drawing area larger than a threshold area; and a third frame including a pattern having a drawing area equal to or less than the threshold. Dividing into layout data;
Setting a correction region necessary for proximity effect correction for a pattern included in the third frame layout data;
Extracting a pattern included in the correction area from a pattern included in the second frame layout data;
Change the shape of the pattern included in the second frame layout data so that the pattern extracted in the step and the pattern included in the second frame layout data do not overlap, and include the changed pattern Generating fourth frame layout data;
Generating fifth frame layout data obtained by synthesizing the pattern included in the extracted correction area and the pattern included in the third frame layout data;
Converting the fourth frame layout data and the fifth frame layout data into drawing data, and executing a proximity effect correction process on a pattern included in the fifth frame layout data;
Drawing the plurality of patterns on the object according to the drawing data;
A pattern drawing method comprising: Drawing the pattern on the object according to the drawing data obtained by converting the fifth frame layout data, and then drawing the pattern on the object according to the drawing data obtained by converting the fourth frame layout data. The pattern drawing method according to claim 5 .

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