JP5150570B2 - Three-phase power converter - Google Patents

Description

  The present invention relates to a three-phase semiconductor power conversion device.

  2. Description of the Related Art Conventionally, a power converter or the like that handles high power uses a plurality of power semiconductor switching elements, for example, insulated gate bipolar transistors (IGBTs) connected in parallel so that high power processing is possible. .

  By the way, when connecting a plurality of power semiconductor switching elements, for example, IGBTs in parallel, simply by connecting them in parallel by conductors, the inductance values of the conductors connected and arranged between the IGBTs and the AC load are different. It is difficult to pass a uniform current through each IGBT. And when the electric current value which flows into each IGBT differs, possibility that thermal destruction will arise in IGBT in which many electric currents flow becomes high. On the other hand, in order to avoid such thermal destruction of the IGBT, it is necessary to select the characteristics of the IGBT to be used or to use an IGBT having a higher power capacity than necessary, resulting in an increase in cost. .

  In order to eliminate such adverse effects, in [Patent Document 1], when a plurality of power semiconductor switching elements, for example, IGBTs are connected in parallel, the inductance values of the conductors connected and arranged between the IGBTs and the load are equal to each other. In addition, a structure in which the connection arrangement state of each IGBT is considered has been proposed.

  The converter disclosed in [Patent Document 1] includes a plurality of IGBTs and smoothing capacitors connected in parallel for each phase, and a pair of DC shorts between both terminals of the smoothing capacitors and both input terminals of each IGBT. In addition to connecting with the bar, the output end and the output terminal of each IGBT are connected with an AC shorting bar, and arranged in a row in a direction perpendicular to the input / output terminals arranged in a straight line of each IGBT. The DC shorting bar and the AC shorting bar are arranged in parallel in the arrangement direction of each IGBT, extended in the upper direction of each IGBT, and an insulating film is arranged between the DC shorting bar and the AC shorting bar on the upper side of each IGBT. By using a superposed structure, the connection arrangement state between the DC short-circuit bar and each IGBT and between the AC short-circuit bar and each IGBT is made uniform.

Japanese Patent Laid-Open No. 9-247960

  Since the converter disclosed in [Patent Document 1] has a structure in which each IGBT is arranged in a line in the same direction when a plurality of power semiconductor switching elements, in this case, IGBTs are connected in parallel, When the number of IGBTs connected in parallel increases, each of the IGBTs connected in parallel has a very elongated structure, and when a smoothing capacitor is connected to this structure, not only becomes a further elongated structure, but also an AC short circuit. The length of the bar also increases, and the inductance of the DC short-circuit bar and the AC short-circuit bar cannot be ignored. Furthermore, the wiring inductance between the parallel connection elements becomes non-uniform.

  The present invention has been made in view of such a technical background, and its object is to include a connection conductor of each power semiconductor switching element between input and output terminals when a plurality of power semiconductor switching elements are connected in parallel. The goal is to make the total inductance as uniform as possible.

  In order to achieve the above object, the present invention provides a three-phase power converter having a DC output terminal and a three-phase AC output terminal. The converter unit includes two converter units and each of the converter units includes six groups of semiconductor packages. The six semiconductor package groups are connected to a P-side DC bus bar and an N-side DC bus bar, and the P-side DC bus bar and the N-side DC bus bar are made to have low inductance by facing each other through a thin insulating layer, And each semiconductor package of the semiconductor package group is a set of two, each AC terminal of each semiconductor package that is set is connected to each other by a symmetrical AC bus bar, and the AC terminals are connected to each other An AC lead-out terminal is provided at a symmetrical position of the bus bar to be connected, and the AC lead-out terminals of the two converter units are symmetrically shaped. It is connected by chromatography and is characterized in that a AC output terminal at symmetrical positions of the converter unit between a bus bar for connecting the AC extraction terminals of two of said converter unit.

  In order to achieve the above object, the present invention provides a three-phase power converter having a DC output terminal and a three-phase AC output terminal, wherein two composite converter units and each of the composite converter units are two converters. Each of the converter units is composed of six groups of semiconductor packages, and the six groups of semiconductor packages of each of the converter units constituting the composite converter unit are divided into a P-side DC bus bar and an N-side DC bus bar. The P-side DC bus bar and the N-side DC bus bar are connected to each other through a thin insulating layer to reduce the inductance, and each of the semiconductor packages constituting the six groups of semiconductor packages is divided into two groups of semiconductors. Each package is a group, and the AC terminals of the group of semiconductor packages are generally symmetrical. The AC extraction terminal is provided at a symmetrical position of the bus bar that is connected by a bus bar and connects between the AC terminals, and the AC extraction terminals of the two converter units are connected by a bus bar having a substantially symmetrical shape, An AC extraction terminal of the composite converter is provided at a symmetrical position of the bus bar connecting the AC extraction terminals of the two converter units, and the AC extraction terminals of the two composite converter units are substantially symmetrical bus bars. An AC output terminal is provided at a symmetrical position of the bus bar that is connected and connects the AC extraction terminals of the two composite converter units.

  In order to achieve the above object, the present invention provides a three-phase semiconductor power conversion device having a DC output terminal and a three-phase AC output terminal, including three converter units, each of which is a group of six semiconductors. The six semiconductor package groups are connected to a P-side DC bus bar and an N-side DC bus bar, and the P-side DC bus bar and the N-side DC bus bar are opposed to each other through a thin insulating layer to reduce inductance. And each semiconductor package of the semiconductor package group is a set of two, each AC terminal of each semiconductor package is connected to each other by a symmetrical AC bus bar, the AC terminal An alternating current extraction terminal is provided at a symmetrical position of the bus bar connecting the two, and the alternating current extraction terminals of the three converter units are connected to each other. By inserting slits from both sides of the AC bus bar connecting the inter-unit bus bar from each of the semiconductor units of the converter unit disposed in the center among the three converter units, The inductance between the AC terminals of the semiconductor units of each of the two converter units is substantially the same, and an AC output terminal is provided at a symmetrical position of the bus bar connecting the AC extraction terminals of the converter units. It is characterized by that.

  Furthermore, in the three-phase power converter according to the present invention, the semiconductor package is mounted on the same air-cooled cooling fin.

  Furthermore, the present invention is characterized in that, in the three-phase power converter, a bus bar for connecting the AC terminals of the semiconductor package is arranged leeward than the cooling fin.

  Furthermore, in the three-phase power converter, the present invention is characterized in that a bus bar for connecting the AC terminals of the semiconductor package installed leeward of the cooling fin is arranged in a direction perpendicular to the cooling fin. Is.

  Furthermore, the present invention provides a three-phase power converter, wherein three separate semiconductor packages of the six semiconductor package groups of the converter unit are paired, and the alternating current terminals of the paired semiconductor packages are connected to the alternating current bus bar. It is characterized by having been connected by.

  According to the present invention, even when a plurality of power semiconductor switching elements are connected in parallel, the overall inductance including the connection conductor of each power semiconductor switching element is made as uniform as possible between the input and output terminals. Thus, it is possible to provide a three-phase semiconductor power conversion device capable of reducing the ripple of a DC capacitor.

The block diagram of the three-phase semiconductor power converter device of the 1st Example of this invention. The circuit block diagram of the three-phase semiconductor power converter device of the 1st Example of this invention. The circuit block diagram of the semiconductor package which comprises the three-phase semiconductor power converter device of each Example of this invention. The block diagram of the three-phase semiconductor power converter device of the 2nd Example of this invention. The block diagram of the three-phase semiconductor power converter device of the 3rd Example of this invention. The block diagram of the three-phase semiconductor power converter device of the 4th Example of this invention. The block diagram which shows embodiment of the three-phase semiconductor power converter device of this invention. The comparison figure for demonstrating the effect of this invention. Explanatory drawing for showing the effect of the present invention. The one part block diagram of the three-phase semiconductor power converter device of the 5th Example of this invention. The one part block diagram of the three-phase semiconductor power converter device of the 1st-4th Example of this invention.

  Embodiments of the present invention will be described below with reference to the drawings. First, the circuit configuration of the semiconductor package 101 which is a main element of the three-phase semiconductor power conversion device of each embodiment will be described with reference to FIG. In the semiconductor package 101, a parallel body composed of IGBT1Pg and a freewheel diode 1Pd connected in reverse parallel to the IGBT1Pg is connected in series with a parallel body composed of IGBT1Ng and freewheel diode 1Nd connected in reverse parallel to the IGBT1Ng. It is a configuration. The semiconductor package 101 has three terminals. One is a collector terminal of the IGBT 1Pg and is called a semiconductor package P-side terminal 192. The other is an emitter terminal of the IGBT 1Ng and is called a semiconductor package N-side terminal 191. The last one is the emitter terminal of the IGBT 1Pg and is called an AC terminal 193 of the semiconductor package. The semiconductor package 101 has a so-called 2-in-1 configuration, but as another modification, a configuration in which two 1-in-1 IGBTs are connected in series, that is, a parallel body of IGBT1Pg and diode 1Pd is housed in one package, and IGBT1Ng The diode 1Nd is housed in a separate package, and the two packages are connected in series, and the same operation can be performed.

  In this specification, two 1 in 1 packages connected in series and having the function of the 2 in 1 semiconductor package 101 in FIG. 7 are also referred to as a semiconductor package 101 or a semiconductor package group 101. Further, IGBT1Pg and IGBTTNg may be other semiconductor switching devices driven by gate signals, such as MOS-FETs.

  FIG. 1 is a connection layout showing a first embodiment of a semiconductor circuit according to the present invention, and FIG. 2 shows an equivalent circuit thereof.

  The configuration of the three-phase semiconductor power conversion device will be described with reference to FIGS. 1 and 2. In FIG. 2, reference numeral 101 denotes a part of the semiconductor package 101 with a lead wire attached to a parallel body composed of the IGBT 1Pg constituting the semiconductor package 101 and the free wheel diode 1Pd connected in antiparallel to the IGBT 1Pdg. A symbol is added.

  First, the schematic configuration of the first embodiment will be described. The three-phase semiconductor power conversion device of FIG. 1 has a configuration in which two converter units 300 are connected in parallel. Each converter unit 300 has a P-side DC extraction terminal 351 and an N-side DC extraction terminal 352 connected in parallel by an inter-unit P-side DC bus bar 133 and an inter-unit N-side DC bus bar 134, and the AC extraction terminal 400. Are connected in parallel by inter-unit AC bus bars 142U to 142W.

  Next, the configuration of converter unit 300 will be described. Each converter unit 300 is composed of six groups of semiconductor packages 101, and two adjacent semiconductor packages 101 are in pairs. That is, each semiconductor package of the converter unit 300 is classified into three groups. Of each set, the AC terminal 193 of each semiconductor package in the set is a U-phase of three-phase AC, the AC terminal 193 of each semiconductor package in the other set is a V-phase output, and the other pair of semiconductor packages is AC The terminal 193 is caused to function as a W-phase output. The AC terminals 193 of each semiconductor package in a set are connected to each other by an AC bus bar having a symmetrical structure. The AC terminals 193 of the U-phase output semiconductor package are connected by a U-phase AC bus bar 141U. The other set is connected to the V-phase AC bus bar 141V, and the other set is connected to the W-phase AC bus bar 141W. The AC lead-out terminals 400 for each phase are installed at symmetrical positions of the AC bus bars 141U to 141W for each phase. Since each of the AC bus bars 141U to 141W has a symmetrical structure, it is easy to balance the currents of the semiconductor packages 101 connected in parallel.

  On the other hand, the P-side terminal 192 of each of the six groups of semiconductor packages 101 is connected to the common DC bus bar 131, and the N-side terminal 191 of each semiconductor package 101 is connected to the DC bus bar 132. The DC bus bar 131 and the DC bus bar 132 are connected to each capacitor 103.

  The direct current bus bar 131 and the direct current bus bar 132 are configured to face each other with a thin insulating layer interposed therebetween to reduce inductance.

  Each of the six groups of semiconductor packages 101 of each converter unit 300 is mounted on the same cooling fin 102 and absorbs heat generated when current is conducted or switched by the cooling fin 102. The cooling fins 102 are cooled by wind, but the condenser 103 cannot withstand high temperatures, so the cooling fins 102 are installed further down than the condenser 103 so that the condenser 103 is not exposed to the warm air generated from the cooling fins 102. .

  Next, connection between converter units 300 will be described. As described above, in FIG. 1, two sets of three-phase semiconductor power conversion devices 100 are connected in parallel. The DC bus bars 131 and 132 of each converter unit 300 are connected by an inter-unit P-side DC bus bar 133 and an inter-unit N-side DC bus bar 134 via a P-side DC extraction terminal 351 and an N-side DC extraction terminal 352, respectively. Both the P-side DC extraction terminal 351 and the N-side DC extraction terminal 352 are installed at a location farther from the semiconductor package 101 than the capacitor 102. The P-side DC extraction terminal 351, the N-side DC extraction terminal 352, and the semiconductor package are installed by disposing the P-side DC extraction terminal 351 and the N-side DC extraction terminal 352 at a location farther than the capacitor 103 and each semiconductor package 101. Since the capacitor 103 is interposed between 101, current imbalance of the DC bus bars 131 and 132 can be prevented.

  The output terminal 161 and the output terminal 162 of the three-phase semiconductor power conversion device of this embodiment are installed in the inter-unit P-side DC bus bar 133 and the inter-unit N-side DC bus bar 134.

  Next, the connection on the AC side between the converter units 300 will be described. The AC extraction terminals 400 of each phase of the converter unit 300 are connected by inter-unit AC bus bars 142U to 142W. The AC output terminals 151U to 151W of the semiconductor power conversion device of this embodiment are installed at symmetrical positions of the inter-unit AC bus bars 142U to 142W.

  Next, it will be described that the current balance and the DC capacitor ripple reduction, both of the effects of the present invention, can be achieved. Based on the PWM signal, the semiconductor power converter outputs the AC voltage to the AC output terminals 151U to 151W by switching each IGBT of the semiconductor package 101 connected to the DC capacitor with the DC voltage applied to the DC capacitor. To do.

  First, the ripple current of the capacitor 103 will be described. In order for ripple of the capacitor 103 to occur, it is necessary to input and output power from the capacitor 103.

  The conditions shown in Table 1 are required to exchange power between “capacitor 103 or output terminals 161 and 162” and “AC output terminals 151U to 151W”. That is, under the gate conditions of each IGBT in Table 1, the AC current table for each phase passes through the output terminals 161 and 162 and the DC capacitor 102. In a steady state, no DC component is superimposed on the ripple current supplied from the DC capacitor. Therefore, since the direct current component is not superimposed on the direct current capacitor 102 in the steady state, the alternating current component of the current passing through the output terminals 161 and 162 and the direct current capacitor 102 becomes the ripple current of the capacitor.

  Next, the case where the power factor is 1 will be described as an example.

  8 shows the current flowing from the AC terminal 193 of the semiconductor package 101 functioning as the U phase when the power factor is 1, and FIG. 9 shows the sum of the current flowing from the AC terminal 193 of each phase semiconductor package 101 when the power factor is 1. Show. When the U-phase, V-phase, and W-phase semiconductor packages 101 are connected by the low-inductance DC bus bars 131 and 132 as in this embodiment, the ripple of the DC capacitor becomes a waveform close to the waveform of FIG. When the inductance between the DC terminals 91 and 92 of the semiconductor packages of V, V and W phases is large, a ripple current waveform similar to that of FIG. 8 is obtained. That is, as in this embodiment, the ripple current of the capacitor 103 can be reduced by connecting the U-phase, V-phase, and W-phase semiconductor packages 101 with the DC bus bars 131 and 132 with reduced inductance.

  Next, current sharing will be described. The IGBTs of the semiconductor packages 101 of each phase are switched simultaneously. In the power conversion device of the present invention, the inductance of the DC bus bars 131 and 132 is reduced as described above, so that the inductance of the AC bus bars is sufficiently larger than the inductance of the DC bus bars 131 and 132. Therefore, the current sharing of the current flowing from the AC terminal 193 of each semiconductor package 101 is determined by the inductance of the AC terminal. First, since the AC bus bars 141U to 141W of the semiconductor package 101 in the set in the converter unit 300 have a symmetrical shape, the currents of the semiconductor packages 101 in the set in the converter unit 300 are substantially equal. Next, the current balance between the converter units 300 will be balanced, since the inter-unit AC bus bar has a symmetrical shape. Therefore, the current of each semiconductor package 101 can be balanced.

  In addition, the AC bus bars 141U to 141W of each unit are connected to each other by inter-unit AC bus bars 142U to 142W. The inter-unit AC bus bars 142U to 142W are arranged leeward of the cooling fins 2, and the bus bars are installed horizontally with respect to the wind direction. By doing in this way, an alternating current bus bar can be cooled and the cross-sectional area of an alternating current bus bar can be made small. Further, when the cross-sectional area is reduced, the resistance value is increased, and the current imbalance can be further reduced. Although the wind passing through the cooling fins is warmed by the cooling fins, the bus bars can withstand extremely high temperatures, so that they can be sufficiently used for cooling the bus bars.

  FIG. 7 shows an equivalent circuit when the three-phase semiconductor power conversion device 100 of the present invention is applied as an inverter for driving a motor. The same application is possible in the three-phase semiconductor power conversion device 100 other than the present embodiment. Output terminals 161 and 162 of the three-phase semiconductor power converter are connected to the DC voltage source 600. On the other hand, AC output terminals 151U to 151W of the three-phase semiconductor power converter are connected to a three-phase induction motor 150.

  Although omitted in the figure, a gate driver is connected between the gate terminal and the emitter terminal of the IGBT of the semiconductor package 101 constituting the three-phase semiconductor power converter, and the AC voltage command value is determined according to the voltage command of the control device (not shown). A pulse signal obtained by PWM control is input to the gate driver, and each IGBT of each semiconductor package 101 is switched. By doing in this way, an alternating voltage is output to the alternating current output terminals 151U to 151W of the three-phase semiconductor power converter. Therefore, the three-phase induction motor 150 connected to the AC bus bar output terminal can be driven.

  The second embodiment is characterized in that four converter units 300 are connected in parallel. The configuration of the second embodiment is shown in FIG.

  The power converter shown in FIG. 1 is connected in parallel. In FIG. 4, a configuration corresponding to the power conversion device in FIG. 1 is referred to as a composite converter unit 200. Further, the P side DC extraction terminal 163, the N side DC extraction terminal 164, and the AC extraction terminal of the composite converter unit 200 are referred to as 153U, 153V, and 153W, respectively.

  The semiconductor power conversion device according to the second embodiment has a configuration in which AC extraction terminals 153U to 153W of the composite converter units 200 are connected by AC bus bars 144U to 144W having a symmetrical structure. The AC output terminals 151U to 151W of the power converter are installed at symmetrical positions of the AC bus bars 144U to 144W.

  With such a configuration, it is possible to balance the current of each IGBT of each semiconductor package 101 of the unit between the composite converters.

  The AC bus bars 144U to 144W are disposed leeward of the cooling fins 102, and the bus bars are installed horizontally with respect to the wind direction. By doing in this way, an alternating current bus bar can be cooled and the cross-sectional area of an alternating current bus bar can be made small. Further, when the cross-sectional area is reduced, the resistance value is increased, and the current imbalance can be further reduced.

  The third embodiment is characterized in that three converter units 300 are arranged in parallel. The configuration of the three-phase semiconductor power conversion device of this example is shown in FIG.

  When three converter units are arranged in parallel, it is difficult to achieve current balance due to the symmetry of the AC terminal. Therefore, cuts are made from both ends of the AC bus bars 141U to 141W of the converter unit 300 arranged in the center. By doing in this way, the inductance of AC bus bar 141U-141W arrange | positioned in the center can be enlarged, and the electric current of AC bus bar 141U-141W of each three-phase semiconductor power converter device 100 can be balanced.

  The fourth embodiment is characterized in that three converter units 300 are arranged in parallel as in the third embodiment. The configuration of the three-phase semiconductor power conversion device of this example is shown in FIG. In the third embodiment, the AC bus bars 141U to 141W of the converter unit 300 installed in the center are cut, but in the fourth embodiment, the AC bus bars 141U to 141W of each converter unit are extended from the extension bar 143a or It is connected to the inter-converter AC bus bar via 143b, and the extension bar 143b is cut. By doing in this way, the inductance of AC bus bar 141U-141W arrange | positioned in the center can be enlarged, and the electric current of AC bus bar 141U-141W of each three-phase semiconductor power converter device 100 can be balanced.

  The fifth embodiment is characterized in that the combination of the semiconductor packages 101 of the converter units 300 of the three-phase semiconductor power converters 100 of the first to fourth embodiments is changed. FIG. 10 is a top view of each semiconductor package 101 of the converter unit 300 constituting the three-phase semiconductor power conversion device 100 of the first to fourth embodiments, and FIG. 11 is a three-phase semiconductor power of the fifth embodiment. The figure which looked at each semiconductor package 101 of the converter unit 300 which comprises the converter 100 from the top is shown. 10 and 11, the semiconductor package 101 connected by the same AC bus bar 141U to 141W is a set, and the semiconductor package 101 connected by the AC bus bar 141U is connected by the AC bus bar 141V as the U phase. The semiconductor package 101 functions as the V phase, and the semiconductor package 101 connected by the AC bus bar 141W functions as the W phase.

  That is, in FIG. 10, the semiconductor package 101 is arranged in the order of the U phase, the V phase, the W phase, the U phase, the V phase, and the W phase. The semiconductor package 101 of each phase of UVW is arranged closer, and the inductance of the DC bus bars 131 and 132 between the phases not shown in FIGS. 10 and 11 becomes smaller, so the ripple current of the DC capacitor Can be realized.

  The present invention can be applied to a general power converter that controls a large amount of power, and can be used particularly for a motor drive or the like.

1Pd, 1Nd Lower arm freewheel diode 1Pg Upper arm IGBT
1Ng Lower arm IGBT
100 Three-Phase Semiconductor Power Conversion Device 101 Semiconductor Package 102 Cooling Fin 103 Capacitors 131, 132 DC Bus Bar 133 Between Units P Side DC Bus Bar 134 Between Units N Side DC Bus Bar 141U U Phase AC Bus Bar 141V V Phase AC Bus Bar 141W W Phase AC Bus Bar 142U Inter-unit U-phase AC bus bar 142V Inter-unit V-phase AC bus bar 142W Inter-unit W-phase AC bus bar 143a Extension bar 144b Extension bar 144U, 144V, 144W of converter unit arranged in the center AC bus bar 150 Induction motors 151U, 151V, 151W AC Output terminal 153U U-phase AC extraction terminal 153V V-phase AC extraction terminal 153W W-phase AC extraction terminal 161, 162 Output terminal 163 P-side DC extraction terminal 164 N DC takeout terminal 191 N side terminal 192 P-side terminals 193 AC terminal 200 composite converter unit 300 converter unit 400 AC takeout lead terminal 600 DC voltage source

Claims (7)

In the three-phase power converter having a DC output terminal and a three-phase AC output terminal,
Two converter units, and each converter unit is composed of six groups of semiconductor packages, etc.
The six semiconductor package groups are connected to the P-side DC bus bar and the N-side DC bus bar,
The P-side DC bus bar and the N-side DC bus bar are reduced in inductance by facing each other through a thin insulating layer,
And each semiconductor package of the semiconductor package group is a set of two, each AC terminal of each semiconductor package that is set is connected to each other by a symmetrical AC bus bar, and the AC terminals are connected to each other AC extraction terminal is provided at the symmetrical position of the bus bar
The AC output terminals of the two converter units are connected to each other by a bus bar having a symmetrical shape, and an AC output terminal is provided at a symmetrical position of the bus bar between the converter units that connects the AC output terminals of the two converter units. A three-phase power converter characterized by being provided. In a three-phase power converter with a DC output terminal and a three-phase AC output terminal,
Two composite converter units, and each composite converter unit is composed of two converter units, and each of the converter units is composed of six groups of semiconductor packages,
The six semiconductor package groups of each converter unit constituting the composite converter unit are connected to a P-side DC bus bar and an N-side DC bus bar,
The P-side DC bus bar and the N-side DC bus bar are reduced in inductance by facing each other through a thin insulating layer,
The semiconductor packages constituting the six semiconductor package groups are grouped into two groups of semiconductor packages, and the AC terminals of the grouped semiconductor package groups are connected by a bus bar having a substantially symmetrical shape. The AC extraction terminal is provided at a symmetrical position of the bus bar connecting the AC terminals,
The AC extraction terminals of the two converter units are connected to each other by a bus bar having a substantially symmetrical shape, and the AC extraction of the composite converter is located at a symmetrical position of the bus bar connecting the AC extraction terminals of the two converter units. A terminal,
The AC extraction terminals of the two composite converter units are connected to each other by a bus bar having a substantially symmetrical shape, and an AC output terminal is provided at a symmetrical position of the bus bar connecting the AC extraction terminals of the two composite converter units. A three-phase power converter characterized by being provided. In a three-phase semiconductor power converter with a DC output terminal and a three-phase AC output terminal,
Three converter units, each of which is composed of six groups of semiconductor packages,
The six groups of semiconductor packages are connected to a P-side DC bus bar and an N-side DC bus bar, and the P-side DC bus bar and the N-side DC bus bar are opposed to each other through a thin insulating layer to reduce inductance.
And each semiconductor package of the semiconductor package group is a set of two, each AC terminal of each semiconductor package that is set is connected to each other by a symmetrical AC bus bar, and the AC terminals are connected to each other An alternating current extraction terminal is provided at a symmetrical position of the bus bar,
The AC extraction terminals of the three converter units are connected with each other by a bus bar between the units,
By inserting slits from both sides of the AC bus bar connecting the bus bars between the units from each of the semiconductor units of the converter unit arranged in the center among the three converter units, each semiconductor of the three converter units. The inductance between the units from each AC terminal of the unit is substantially the same,
An AC output terminal is provided at a symmetrical position of the bus bar connecting the AC extraction terminals of the converter unit. In the three-phase power converter according to claims 1 to 3,
3. The three-phase power converter according to claim 1, wherein the semiconductor package is mounted on the same air-cooled cooling fin. In the three-phase power converter according to claims 1 to 4,
3. A three-phase power converter, wherein a bus bar for connecting the AC terminals of the semiconductor package is arranged leeward than the cooling fin. In the three-phase power converter of Claim 1 thru | or 5,
A three-phase power converter characterized in that a bus bar for connecting between AC terminals of a semiconductor package installed leeward of a cooling fin is arranged in a direction perpendicular to the cooling fin. The three-phase power converter according to claim 1 to 6,
Three-phase power conversion characterized in that three separate semiconductor packages of the six semiconductor package groups of the converter unit are paired, and the AC terminals of the paired semiconductor packages are connected by the AC bus bar apparatus.

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