JP5147075B2 - Method for producing hydrogen separator, apparatus for producing hydrogen separator, and substrate for film formation with hydrogen separation membrane - Google Patents

Description

  The present invention relates to a method for manufacturing a hydrogen separator, a hydrogen separator manufacturing apparatus, and a film forming substrate with a hydrogen separation membrane. More specifically, the present invention relates to a method of manufacturing a hydrogen separator using a predetermined film-forming substrate with a hydrogen separation membrane, a hydrogen separator manufacturing apparatus used for the implementation, and a film-forming substrate with a hydrogen separation membrane. About.

  Conventionally, a hydrogen separation membrane manufacturing method has been proposed in which a thin film of Pd or an alloy mainly composed of Pd is formed on the surface of a shape forming substrate, and then the shape forming substrate is removed to manufacture a Pd-based hydrogen separation membrane. (See Patent Document 1).

JP 2001-145825 A

  However, in the method for producing a hydrogen separation membrane described in Patent Document 1, since the obtained hydrogen separation membrane is a self-supporting membrane in a state of being peeled off from the substrate, cracks, wrinkles, and breakage occur particularly in the case of a thin film. The problem is that it is easy to handle and extremely difficult to handle.

  The present invention has been made in view of such problems of the prior art, and the object of the present invention is to manufacture a hydrogen separator capable of easily handling a hydrogen separation membrane and improving productivity. The object is to provide a method, a hydrogen separator manufacturing apparatus, and a film forming substrate with a hydrogen separation membrane.

  The inventors of the present invention have made extensive studies in order to achieve the above object. As a result, the inventors have found that the above object can be achieved by using a predetermined film-forming substrate with a hydrogen separation membrane, and have completed the present invention.

That is, the method for producing a hydrogen separator of the present invention is a method for producing a hydrogen separator having a porous support and a hydrogen separation membrane bonded to the surface of the porous support, the substrate for film formation and the It possesses a deposition substrate for the hydrogen separation film formed on the surface of a portion of the surface of the film forming a substrate made of non-transfer surface adjacent to the transfer surface and the transfer surface, transfer surface and the non A film-forming substrate with a hydrogen separation membrane having a hydrogen separation membrane formed on the transfer surface and a porous support are brought into close contact with each other so that the hydrogen separation membrane faces the porous support, and heated and heated. It includes a step of transferring the hydrogen separation membrane to the porous support by pressure treatment.

The apparatus for producing a hydrogen separator according to the present invention is used in the method for producing a hydrogen separator according to the present invention, and includes a porous support and a hydrogen separation membrane joined to the surface of the porous support. a body of the manufacturing apparatus, possess a film-forming substrate and the film forming the base for the hydrogen separation film formed on the surface of a portion of the surface of the film forming the base for the transfer surfaces and transfer surface A film-forming substrate with a hydrogen separation membrane comprising a non-transfer surface adjacent to the substrate and having a hydrogen separation membrane formed on the transfer surface and the non-transfer surface ; and a porous support; An arrangement means for closely contacting the porous support, a heating means for heating the substrate for film formation, the hydrogen separation membrane and the porous support to a predetermined temperature, and a porous support for the film formation substrate with a hydrogen separation membrane And pressurizing means for pressurizing the body with a predetermined pressure.

Furthermore, the substrate for film formation with a hydrogen separation membrane of the present invention is used in the method for producing a hydrogen separator of the present invention, and includes a film formation substrate and a hydrogen separation membrane formed on the surface of the film formation substrate. it has a, characterized in that it has a non-transfer surface consists, transfer surface and the formed hydrogen separation membrane non transfer surface portion of the surface of the film forming a substrate adjacent to the transfer surface and the transfer surface And

  According to the present invention, since a predetermined film-forming substrate with a hydrogen separation membrane is used, the hydrogen separation membrane can be handled easily and the productivity can be improved. And a film forming substrate with a hydrogen separation membrane can be provided.

It is process drawing which shows an example of the manufacturing method of the hydrogen separator of this embodiment. It is sectional drawing which shows some examples of the film-forming base | substrate with a hydrogen separation membrane of this embodiment.

  Hereinafter, a method for producing a hydrogen separator according to an embodiment of the present invention, a film-forming substrate with a hydrogen separation membrane used for the implementation, and a device for producing a hydrogen separator will be sequentially described in detail.

First, the manufacturing method of the hydrogen separator of this embodiment is demonstrated in detail, referring drawings.
FIG. 1 is a process diagram showing an example of a method for producing a hydrogen separator according to this embodiment. First, as shown in FIG. 1A, a film-forming substrate 10 with a hydrogen separation film having a film-forming substrate 12 and a hydrogen separation film 14 formed on the surface of the film-forming substrate 12, and a porous structure. A support 16 is prepared. The hydrogen separation membrane 14 has a free end portion 14a. Next, as shown in FIG. 4B, the hydrogen separation membrane 14 is brought into close contact with the porous support 16 and the hydrogen separation membrane 14 is transferred to the porous support 16 by heating and pressurizing treatment. To do. Thereafter, as shown in FIG. 2C, the hydrogen separator having the porous support 16 and the hydrogen separation membrane 14 bonded to the surface of the porous support 16 by removing the film-forming substrate 12 is removed. 20 can be obtained.

By passing through such a process, handling of the hydrogen separation membrane in the state of a self-supporting membrane can be avoided, handling of the hydrogen separation membrane can be facilitated, and productivity can be improved.
Here, the heating and pressurizing treatment during the transfer is not particularly limited as long as the hydrogen separation membrane can be transferred, depending on the type, material, film thickness, durability, and purpose of the hydrogen separation membrane. Can be set.
As an example, in the case of a metal hydrogen separation membrane, transfer is performed within a range of a heating temperature of 200 to 1300 ° C. and a pressing pressure of 0.1 to 20 MPa against the porous support depending on the area to be transferred and the application. At that time, the transfer time may be set within a range of 0.5 to 10 hours.

As the hydrogen separation membrane with a membrane-forming substrate, Ri Do from non-transfer surface that part of the surface of the film formation substrate adjacent to the transfer surface and the transfer surface, transfer surface and formed on the non-transfer surface Ru used having a hydrogen separation membrane.
When such a film-forming substrate with a hydrogen separation membrane is used, cracks and breakage are less likely to occur in the transferred hydrogen separation membrane, compared to the case where a hydrogen separation membrane is formed only on the transfer surface. The hydrogen separation membrane can be handled more easily, and the productivity can be further improved.
On the other hand, for example, when a film having a hydrogen separation film formed on the entire surface of the film formation substrate is used, the film formation substrate with a hydrogen separation film may not be easily handled.

Further, although not particularly limited, it is desirable to use a substrate having a hydrogen separation membrane having a free end as a film-forming substrate with a hydrogen separation membrane.
By using such a film formation substrate with a hydrogen separation membrane, the transfer of the hydrogen separation membrane can be performed more smoothly, the handling of the hydrogen separation membrane can be made easier, and the productivity can be further improved. .

Further, although not particularly limited, it is desirable to use a film forming substrate including an inorganic material as the film forming substrate with a hydrogen separation film. In addition, the thing containing an inorganic material is the meaning containing the thing which consists only of a composite material with an organic material, or an inorganic material.
By using such a film formation substrate with a hydrogen separation membrane, the transfer of the hydrogen separation membrane can be performed more smoothly, the handling of the hydrogen separation membrane can be made easier, and the productivity can be further improved. .

Although it does not specifically limit as said inorganic material, For example, the thing which concerns on an alumina, a zirconia, a silica, quartz glass, silicon nitride, or these arbitrary combinations can be mentioned.
Such an inorganic material can maintain its physical properties and shape even under conditions of high temperature and high pressing pressure during transfer, and transfer of the hydrogen separation membrane can be performed more smoothly. Can be handled more easily, and productivity can be further improved. There is also an advantage that the film-forming substrate can be reused.

Further, although not particularly limited, it is desirable to use a film-forming substrate having a light transmitting property as the film-forming substrate with a hydrogen separation film.
When such a film-forming substrate with a hydrogen separation membrane is used, the presence or absence of pinholes in the hydrogen separation membrane can be relatively easily inspected, and productivity and yield can be further improved.
Here, “light-transmitting” means, for example, that the light incident on the film formation substrate from the pinhole of the hydrogen separation film can be confirmed from the surface of the film formation substrate opposite to the hydrogen separation film. Note that the light transmitted through the substrate for film formation may be detected using a commercially available optical sensor, or may be detected visually. Considering the detection limit of an optical sensor or the like, the higher the light transmittance of the substrate for film formation, the more preferable, and ultraviolet to visible light, for example, a thickness of 10 mm and a transmittance of 0.1 to 100% including reflection loss. It is desirable to be a thing.
In addition, gamma rays, X-rays, low wavelength, and high wavelength light may be used to increase pinhole detection accuracy.

In addition, although not particularly limited, it is desirable to use a hydrogen separation membrane-containing substrate including a metal material as a film formation substrate with a hydrogen separation membrane.
By using such a film formation substrate with a hydrogen separation membrane, the transfer of the hydrogen separation membrane can be performed more smoothly, the handling of the hydrogen separation membrane can be made easier, and the productivity can be further improved. .

  The metal material is not particularly limited, but for example, palladium, vanadium, niobium, tantalum, or an alloy according to any combination thereof, or palladium, vanadium, niobium, tantalum, or any combination thereof. Mention may be made of alloys containing such materials and those related to silver, nickel, copper, rare earth elements or any combination thereof.

  In addition, other examples of the above-described metal material include an alloy of a rare earth element with zirconium, nickel, niobium, yttrium, or any combination thereof.

Further, although not particularly limited, as a film formation substrate with a hydrogen separation film, for example, a hydrogen separation film is formed by sputtering the film formation substrate in a process of heat-treating the film formation substrate in the atmosphere. Formed by a film forming method including a step of forming a first layer by a method, a cleaning step of cleaning the first layer, and a step of forming a second layer by a sputtering method on the cleaned first layer Is preferably used.
When such a film-forming substrate with a hydrogen separation membrane is used, the number of pinholes in the hydrogen separation membrane can be reduced even in places where there are relatively many floating particles, and productivity and yield can be further improved. Of course, it is also possible to carry out film formation in a single layer at a production site with few suspended particles. That is, the film formation substrate with a hydrogen separation film includes a step in which the hydrogen separation film heat-treats the film-formation substrate in the atmosphere and a step in which a hydrogen separation film is formed on the heat-treated film formation substrate by a sputtering method. It may be formed by a film forming method including the above.

Although not particularly limited, examples of the film formation substrate with a hydrogen separation membrane include a hydrogen separation membrane in which a pre-cleaning process for cleaning the film formation substrate and a pre-cleaned film formation substrate in the atmosphere. A step of heat-treating the substrate, a step of forming a first layer on the heat-treated film-forming substrate by a sputtering method, a step of washing the first layer, and a step of forming a second layer on the washed first layer by a sputtering method. It is also preferable to use a film formed by a film forming method including a forming step.
When such a film-forming substrate with a hydrogen separation membrane is used, pinholes in the hydrogen separation membrane can be reduced and productivity and yield can be further improved.

As described above, it is desirable to perform heat treatment before forming the hydrogen separation membrane on the film formation substrate, which makes it difficult for the hydrogen separation membrane to swell during transfer of the hydrogen separation membrane to the porous support. Further, pinholes in the hydrogen separation membrane can be reduced, and productivity and yield can be further improved. That is, when the film formation substrate is subjected to heat treatment, the gas component confined inside the film formation substrate expands and ejects, and a bulge defect that lifts the hydrogen separation membrane is less likely to occur. On the other hand, when the heat treatment is not performed, a blister defect occurs, and if this is excessive, the hydrogen separation membrane may rupture and become pinholes.
Note that the heat treatment atmosphere is preferably in the air. If organic substances adhere to the substrate for film formation, it can be burned off in the air, but in an inert or vacuum atmosphere, the organic substances may carbonize and remain on the substrate. This is because if the remaining carbide adheres to the hydrogen separation membrane, carbon may diffuse into the membrane and deteriorate the hydrogen permeation performance. The heat treatment temperature is preferably not less than the heating temperature in the transfer and not more than the heating temperature in the transfer + 200 ° C. If the temperature is lower than the heating temperature in the transfer, the gas component may not be released sufficiently and a swell defect of the hydrogen separation membrane may occur, and if the heating temperature in the transfer exceeds + 200 ° C., the gas component is sufficiently released. However, high heat resistance is required for the film-forming substrate, which increases the cost and further increases the cost of the heat treatment. Furthermore, the heat treatment time is preferably 5 minutes or more and 6 hours or less. If it is less than 5 minutes, the gas release may be insufficient, and if it exceeds 6 hours, the cost of the heat treatment will increase.

  In addition, it is desirable to clean the first layer in this way, so that pinholes in the hydrogen separation membrane can be reduced, and productivity and yield can be further improved. The main cause of pinholes is foreign matter, and after the hydrogen separation membrane is formed, the hydrogen separation membrane is dropped together with the foreign matter, resulting in pinholes. This is because it can be efficiently removed by washing after the film formation.

  Although it does not specifically limit as said washing | cleaning process, For example, the process including the process which concerns on gas spraying, brushing, ultrasonic cleaning, or these arbitrary combinations can be mentioned.

Furthermore, although not particularly limited, the film forming substrate with a hydrogen separation membrane is preferably, for example, one having a thickness of the first layer of the hydrogen separation membrane of 0.05 to 1 μm.
When such a film-forming substrate with a hydrogen separation membrane is used, pinholes in the hydrogen separation membrane can be reduced and productivity and yield can be further improved.
Since pinholes resulting from foreign matters are formed in the first layer by cleaning, the thickness of the first layer is preferably as thin as possible, and is preferably 1 μm or less. On the other hand, when the thickness of the first layer is less than 0.05 μm, the strength of the first layer is insufficient, and thus it is preferably 0.05 μm or more.

Next, the film forming substrate with a hydrogen separation membrane of this embodiment will be described in detail with reference to the drawings.
FIG. 2 is a cross-sectional view showing some examples of the film-forming substrate with a hydrogen separation membrane of this embodiment. As shown in FIGS. 4A to 4B , the film-forming substrate 10 (10 ′) with a hydrogen separation film of this embodiment is formed on the surfaces of the film-forming substrate 12 and the film-forming substrate 12. And a hydrogen separation membrane 14.
Such a film-forming substrate with a hydrogen separation membrane can avoid the handling of the hydrogen separation membrane in the state of a self-supporting membrane in the above-described method for producing a hydrogen separator, and the handling of the hydrogen separation membrane is easy. Therefore, productivity can be improved.

Further, example embodiment as shown in FIG. 2 (b), the hydrogen separation membrane with a membrane-forming substrate 10 'is partially transfer surface of the surface of the film-forming substrate 12 (upper surface in FIG. 2 (b)) and non-transfer surface adjacent to the transfer surface Ri Tona (side in FIG. 2 (b)), Ru der those having a hydrogen separation membrane 14 which is formed in the transfer surface and the non-transfer surface.
Such a film-forming substrate with a hydrogen separation film is formed only on the transfer surface (upper surface in FIG. 2C), which is a part of the surface of the film-forming substrate 12, for example, as shown in FIG. Compared with the case where the hydrogen separation membrane 14 is formed, in the above-described method for producing the hydrogen separator using these, the transferred hydrogen separation membrane is less likely to be cracked or damaged, and the hydrogen separation membrane is handled. It can be made easier and productivity can be further improved .
Na us, not shown, for example, the use of which a hydrogen separation film is formed on the entire surface of the film forming substrate, it may not be assumed that facilitate handling of the hydrogen separation membrane with a membrane-forming substrate.

Further, although not particularly limited, for example, as shown in FIG. 2A, in the film forming substrate 10 with the hydrogen separation film, it is desirable that the hydrogen separation film 14 has a free end portion 14a. .
Such a substrate for film formation with a hydrogen separation membrane can transfer the hydrogen separation membrane more smoothly and more easily handle the hydrogen separation membrane in the above-described method of manufacturing a hydrogen separator using the same. As a result, productivity can be further improved.

Further, although not particularly limited, it is desirable that the film formation base includes, for example, an inorganic material. In addition, the thing containing an inorganic material is the meaning containing the thing which consists only of a composite material with an organic material, or an inorganic material.
Such a film-forming substrate with a hydrogen separation membrane to which the film-forming substrate is applied can transfer the hydrogen separation membrane more smoothly in the above-described method for producing a hydrogen separator using the same. The handling of the membrane can be made easier and the productivity can be further improved.

Although it does not specifically limit as said inorganic material, For example, the thing which concerns on an alumina, a zirconia, a silica, quartz glass, silicon nitride, or these arbitrary combinations can be mentioned.
The film forming substrate of the film forming substrate with a hydrogen separation membrane to which such an inorganic material is applied can be used even under conditions of high temperature and high surface pressure during transfer in the above-described method for producing a hydrogen separator using the same. The physical properties and shape can be maintained, the transfer of the hydrogen separation membrane can be performed more smoothly, the handling of the hydrogen separation membrane can be made easier, and the productivity can be further improved.

Further, although not particularly limited, it is desirable that the film-forming substrate has, for example, light transmittance.
A film-forming substrate with a hydrogen separation membrane to which such a film-forming substrate is applied can be relatively easily inspected for the presence or absence of pinholes in the hydrogen separation membrane in the above-described method for producing a hydrogen separator. Productivity and yield can be further improved.

In addition, although not particularly limited, it is desirable that the hydrogen separation membrane includes, for example, a metal material.
The substrate for film formation with a hydrogen separation membrane to which such a hydrogen separation membrane is applied can transfer the hydrogen separation membrane more smoothly in the above-described method for producing a hydrogen separator using the same, Can be handled more easily, and productivity can be further improved.

  The metal material is not particularly limited, but for example, palladium, vanadium, niobium, tantalum, or an alloy according to any combination thereof, or palladium, vanadium, niobium, tantalum, or any combination thereof. Mention may be made of alloys containing such materials and those related to silver, nickel, copper, rare earth elements or any combination thereof.

  The metal material is not particularly limited, and examples thereof include alloys of rare earth elements with zirconium, nickel, niobium, yttrium, or any combination thereof.

Further, although not particularly limited, as a film formation substrate with a hydrogen separation film, for example, a hydrogen separation film is formed by sputtering the film formation substrate in a process of heat-treating the film formation substrate in the atmosphere. Formed by a film forming method including a step of forming a first layer by a method, a cleaning step of cleaning the first layer, and a step of forming a second layer by a sputtering method on the cleaned first layer Is preferably used.
When such a film-forming substrate with a hydrogen separation membrane is used, the number of pinholes in the hydrogen separation membrane can be reduced, and the hydrogen purity in the permeation gas of the hydrogen separation membrane can be increased.

Although not particularly limited, examples of the film formation substrate with a hydrogen separation membrane include a hydrogen separation membrane in which a pre-cleaning process for cleaning the film formation substrate and a pre-cleaned film formation substrate in the atmosphere. A step of forming a first layer on the heat-treated film-forming substrate by a sputtering method, a step of cleaning the first layer, and a step of forming a second layer on the cleaned first layer by a sputtering method. It is also preferable to use a film formed by a film forming method including a forming step.
When such a film formation substrate with a hydrogen separation membrane is used, pinholes in the hydrogen separation membrane can be reduced.

  Although it does not specifically limit as said washing | cleaning process, For example, the process including the process which concerns on gas spraying, brushing, ultrasonic cleaning, or these arbitrary combinations can be mentioned.

Furthermore, although not particularly limited, the film forming substrate with a hydrogen separation membrane is preferably, for example, one having a thickness of the first layer of the hydrogen separation membrane of 0.05 to 1 μm.
When such a film-forming substrate with a hydrogen separation membrane is used, pinholes in the hydrogen separation membrane can be reduced and productivity and yield can be further improved.
Since pinholes resulting from foreign matters are formed in the first layer by cleaning, the thickness of the first layer is preferably as thin as possible, and is preferably 1 μm or less. On the other hand, when the thickness of the first layer is less than 0.05 μm, the strength of the first layer is insufficient, and thus it is preferably 0.05 μm or more.

Next, the manufacturing apparatus of the hydrogen separator of this embodiment is demonstrated in detail.
An apparatus for producing a hydrogen separator according to the present embodiment includes an arrangement means for bringing the above-described film-forming substrate with a hydrogen separation membrane and the porous support into close contact with each other so that the hydrogen separation membrane faces the porous support, A heating means for heating the film-forming substrate with a separation membrane and the porous support to a predetermined temperature, and a pressurizing means for pressing the film-forming substrate with a hydrogen separation film to the porous support at a predetermined pressure Therefore, it is preferably used for carrying out the method for producing a hydrogen separator.

  By using such a hydrogen separator manufacturing apparatus, the handling of the hydrogen separation membrane in the state of a self-supporting membrane can be avoided, the handling of the hydrogen separation membrane can be facilitated, and the productivity can be improved.

  The placement means is not particularly limited as long as it can transport the film-forming substrate with a hydrogen separation membrane and the porous support and place them at a predetermined relative position. And belt conveyors. As the heating means, various heaters can be applied as long as they can be heated to the above-described temperature range. Furthermore, as a pressurizing means, if it can pressurize with the pressure mentioned above, it will not specifically limit, Various load provision apparatuses can be applied.

  Hereinafter, the present invention will be described in more detail with reference to some examples, but the present invention is not limited to these examples.

Example 1
<Preparation of substrate for film formation with hydrogen separation membrane>
First, a quartz glass substrate (diameter: 52 mm, thickness: 10 mm) as a substrate for film formation was prepared, and ultrasonic cleaning was performed in ethanol for 5 minutes. Next, the quartz glass substrate was heat-treated at 800 ° C. for 30 minutes in the atmosphere. Next, a quartz glass substrate was attached to a substrate holder (area 1600 cm ² ) of a sputtering apparatus (manufactured by ULVAC, SBH2306RDE). Next, after the inside of the sputtering apparatus was evacuated to 5 × 10 ⁻⁴ Pa or less, RF 200 W sputter etching was performed for cleaning the substrate at an argon gas pressure of 1 Pa. Next, a current of DC 1.0 A was passed through the Pd-25 at% Ag alloy target to form a Pd-25 at% Ag film having a thickness of 0.5 μm on the substrate. Next, the inside of the sputtering apparatus was returned to atmospheric pressure, and the film surface was brushed and washed while pressing a conductive sponge against the Pd-25 at% Ag film formed on the quartz glass substrate. Next, the quartz glass substrate with a Pd-25 at% Ag film that had been subjected to film cleaning was again attached to the substrate holder of the sputtering apparatus. Next, after the inside of the sputtering apparatus was evacuated to 5 × 10 ⁻⁴ Pa or less, a current of DC 1.0 A was passed through the Pd-25 at% Ag alloy target at an argon gas pressure of 1 Pa, and the film formed on the quartz glass substrate A Pd-25 at% Ag film having a thickness of 4.5 μm was formed on a Pd-25 at% Ag film having a thickness of 0.5 μm to obtain a film forming substrate with a hydrogen separation film used in this example.
A film-forming substrate with a hydrogen separation film taken out from the sputtering apparatus was placed on an optical microscope, and light was transmitted from the quartz glass substrate side to conduct a pinhole inspection of the Pd-25 at% Ag film. The hall was not recognized.

<Preparation of hydrogen separator>
Next, a film-forming substrate with a hydrogen separation membrane and a stainless porous material as a porous support are used and placed in close contact with each other so that the hydrogen separation membrane faces the porous support. Then, the substrate for film formation with a hydrogen separation membrane is pressed against a stainless steel porous body at 3 MPa at a center and 0.5 to 10 MPa for 0.5 to 10 hours to support the hydrogen separation membrane in a porous manner. The hydrogen separator of this example was obtained.

(Example 2)
<Preparation of substrate for film formation with hydrogen separation membrane>
Preparation of a film-forming substrate with a hydrogen separation film in Example 1 except that a Pd-25 at% Ag alloy film having a film thickness of 5 μm was formed once on a quartz glass substrate without performing film cleaning. The same operation was repeated to obtain a film formation substrate with a hydrogen separation membrane used in this example.
In the present method, when high purity is not required for the hydrogen purity in the permeation gas of the hydrogen separation membrane, productivity and yield can be improved from those in Example 1.
On the other hand, if the suspended particles at the manufacturing site can be extremely reduced, it is possible to produce a film with few pinholes at the same level as in the first embodiment.

<Preparation of hydrogen separator>
Except for using the film-forming substrate with a hydrogen separation membrane obtained in this example, the same operation as the production of the hydrogen separator in Example 1 was repeated, and the film-forming substrate with a hydrogen separation film used in this example Got.

10, 10'10 "Deposition Base 12 with Hydrogen Separation Film 12 Deposition Base 14 Hydrogen Separation Film 14a Free End 16 Porous Support 20 Hydrogen Separator

Claims (15)

A method for producing a hydrogen separator having a porous support and a hydrogen separation membrane bonded to the surface of the porous support,
Possess a film-forming substrate and the film forming the base for the hydrogen separation film formed on the surface of a portion of the surface of the film forming a substrate made of non-transfer surface adjacent to the transfer surface and the transfer surface A film-forming substrate with a hydrogen separation membrane having a hydrogen separation membrane formed on the transfer surface and the non-transfer surface, and a porous support so that the hydrogen separation membrane faces the porous support. A method for producing a hydrogen separator, comprising a step of transferring the hydrogen separation membrane to the porous support by close contact and heating and pressurization.   The method for producing a hydrogen separator according to claim 1, wherein the hydrogen separation membrane has a free end in the film-forming substrate with a hydrogen separation membrane.   The method for producing a hydrogen separator according to claim 1, wherein the film forming substrate with a hydrogen separation membrane includes an inorganic material. The method for producing a hydrogen separator according to claim 3 , wherein the inorganic material comprises at least one selected from the group consisting of alumina, zirconia, silica, quartz glass, and silicon nitride.   2. The method for producing a hydrogen separator according to claim 1, wherein the film-forming substrate with a hydrogen separation film has light-transmitting properties.   The method for producing a hydrogen separator according to claim 1, wherein the hydrogen separation membrane includes a metal material. A metal element or alloy containing at least one selected from the group consisting of palladium, vanadium, niobium and tantalum, or at least one selected from the group consisting of palladium, vanadium, niobium and tantalum and silver, nickel The method for producing a hydrogen separator according to claim 6 , comprising an alloy containing at least one selected from the group consisting of copper and rare earth elements. 7. The method for producing a hydrogen separator according to claim 6 , wherein the metal material is an alloy of a rare earth element and at least one selected from the group consisting of zirconium, nickel, niobium and yttrium.   The film-forming substrate with a hydrogen separation film includes a step in which the hydrogen separation film heat-treats the film-forming substrate in the atmosphere, and a step of forming a hydrogen separation film on the heat-treated film-forming substrate by a sputtering method. The method for producing a hydrogen separator according to claim 1, wherein the film is formed by a film forming method including: The film-forming substrate with a hydrogen separation film includes a step in which the hydrogen separation film heat-treats the film-forming substrate in the atmosphere, and a step of forming a first layer on the heat-treated film-forming substrate by a sputtering method. And a film forming method comprising: a cleaning process for cleaning the first layer; and a process of forming a second layer on the cleaned first layer by a sputtering method. The method for producing a hydrogen separator according to claim 9 . The film-forming substrate with a hydrogen separation membrane includes a pre-cleaning step in which the hydrogen separation membrane cleans the film-forming substrate, a step of heat-treating the pre-cleaned film-forming substrate in the atmosphere, and the heat treatment. Forming a first layer on the film-forming substrate by a sputtering method; washing a step for washing the first layer; and forming a second layer on the washed first layer by a sputtering method. The method for producing a hydrogen separator according to claim 10 , wherein the hydrogen separator is formed by a film forming method. The method for producing a hydrogen separator according to claim 10 or 11 , wherein the cleaning step includes at least one treatment selected from the group consisting of gas spraying, brushing, and ultrasonic cleaning. The method for producing a hydrogen separator according to claim 10 or 11 , wherein the film-forming substrate with a hydrogen separation membrane has a thickness of the first layer of the hydrogen separation membrane of 0.05 to 1 µm. Production of a hydrogen separator used in the method for producing a hydrogen separator according to any one of claims 1 to 13, comprising a porous support and a hydrogen separation membrane bonded to the surface of the porous support. A device,
Possess a film-forming substrate and the film forming the base for the hydrogen separation film formed on the surface of a portion of the surface of the film forming a substrate made of non-transfer surface adjacent to the transfer surface and the transfer surface A film-forming substrate with a hydrogen separation membrane having a hydrogen separation membrane formed on the transfer surface and the non-transfer surface, and a porous support so that the hydrogen separation membrane faces the porous support. Arrangement means for close contact;
Heating means for heating the substrate for film formation, the hydrogen separation membrane and the porous support to a predetermined temperature;
A pressurizing means for pressurizing the film-forming substrate with a hydrogen separation membrane to the porous support at a predetermined pressure;
An apparatus for producing a hydrogen separator, comprising: To any one of claims 1 to 13 used in the method of manufacturing a hydrogen separator according to chromatic and the formed hydrogen separation film on the surface of the film-forming substrate and the film forming substrate for, the A hydrogen separation membrane characterized in that a part of the surface of the substrate for film formation is composed of a transfer surface and a non-transfer surface adjacent to the transfer surface, and has a hydrogen separation membrane formed on the transfer surface and the non-transfer surface A substrate for film formation.

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