JP5135011B2 - Thermoelectric conversion temperature sensor and manufacturing method thereof - Google Patents

Description

  The present invention relates to a thermoelectric conversion temperature sensor and a method for manufacturing a thermoelectric conversion temperature sensor, and more particularly to a thermoelectric conversion temperature sensor that detects a temperature by converting a temperature change into an electric signal and a method for manufacturing the thermoelectric conversion temperature sensor.

  As a method for detecting a temperature change, a temperature sensor that detects a change in resistance value by a thermistor, a physical shape change by bimetal, and a pressure change using air is known. Also known is a method for detecting temperature by electromotive force due to the Seebeck effect of a thermocouple in contact with a different metal.

  More specifically, a thermocouple temperature sensor in the form of a rod as shown in FIG. 10 has been commercialized as a thermocouple.

  Further, as shown in FIG. 11, a temperature sensor in which a constant metal 41 and a pure metal 42 are bonded to each other in a continuous manner with a bonded portion 46, a hollow bonded portion 47, and a bonded bonded portion 48 are commercially available. . Such a temperature sensor has a long (large) shape and generates less electromotive force.

Therefore, a temperature sensor using a thermoelectric conversion semiconductor as a material that is smaller and has a large electromotive force has been developed. Thermoelectric conversion semiconductors are roughly classified into P-type thermoelectric conversion semiconductors and N-type thermoelectric conversion semiconductors. Specifically, for example, as shown in FIG. 3, there is a temperature sensor in which a P-type thermoelectric conversion semiconductor 51 and an N-type thermoelectric conversion semiconductor 52 are paired. It is known that a temperature sensor using a thermoelectric conversion semiconductor generates a larger electromotive voltage due to heat exchange with a heat source than a temperature sensor using a thermocouple (Patent Document 1, Non-Patent Document 1, etc.).
JP 2007-324500 A “Measurement of Seebeck coefficient of FeSi 2 -based thermoelectric conversion module”, Katsuyuki Tanaka et al., The 28th Japan Symposium on Thermophysical Properties, Oct. 24-26, 2007, Sapporo.

  However, it has been found that a temperature sensor using a thermoelectric conversion semiconductor is greatly affected by the arrangement of the thermoelectric conversion semiconductor, the connection method, and the connection of the conductive wires to be connected, and the electromotive force generated in the thermoelectric conversion semiconductor is greatly changed. Therefore, elucidating an efficient structure for increasing the electromotive force has become a technical problem.

  An object of the present invention is to provide a thermoelectric conversion temperature sensor using a thermoelectric conversion semiconductor that can obtain an electromotive force suitable for temperature detection, and a manufacturing method thereof.

  To achieve the above object, the invention according to claim 1 is directed to a first conductivity type first thermoelectric conversion semiconductor having a first surface and a second surface, and the first area in contact with the second surface. A second thermoelectric conversion semiconductor of the second conductivity type having a third surface and a fourth surface having a second area smaller than the first area, a fifth surface having the second area in contact with the fourth surface, and the first surface A first conductivity type third thermoelectric conversion semiconductor having a sixth surface of area, a second surface of a second conductivity type having a seventh surface of the first area in contact with the sixth surface and an eighth surface of the first area. 4 thermoelectric conversion semiconductors, wherein each of the semiconductors is continuously joined in the order of different conductivity types.

The invention according to claim 2 is the invention according to claim 1, wherein the first surface, the second surface, the third surface, the sixth surface, the seventh surface, and the eighth surface, which are surfaces having the first area . surface is circular, the fourth surface is a surface having a second area, said fifth surface is the first surface, the second surface, the third surface, the sixth surface, the seventh surface A circular shape having a smaller diameter than the circular shape of the eighth surface .

According invention in claim 3, in claim 1 or claim 2, wherein the first surface is a surface having a first area, the second surface, the third surface, the sixth surface, the seventh surface , The eighth surface is circular and the fourth surface is the surface having the second area , the fifth surface is the first surface , the second surface, the third surface, the sixth surface, The seventh surface and the eighth surface are formed by cutting out a part of the circular shape .

Invention according to claim 4, in any one of claims 1 to 3, wherein the one in which the junction of the thermoelectric conversion semiconductor each other are joined by a discharge plasma bonding method.

  The invention according to claim 5 is characterized in that, in claim 1, the thermoelectric conversion semiconductors are sintered so as to be integrally joined.

  In order to achieve the above object, the invention according to claim 6 is the first thermoelectric conversion semiconductor of the first conductive type in the form of powder so that the first surface and the second surface of the first area face each other. Forming and sintering the second surface of the powdery second conductivity type so that the third surface of the first area and the fourth surface of the second area smaller than the first area are opposed to each other. (2) forming and sintering the thermoelectric conversion semiconductor; and a third first-conductivity-type third in powder form so that the fifth surface of the second area and the sixth surface of the first area are opposed to each other. Molding and sintering the thermoelectric conversion semiconductor, and molding the powdery second conductivity type fourth thermoelectric conversion semiconductor so that the seventh surface and the eighth surface of the first area face each other. And sintering the first to fourth thermoelectric conversion semiconductors after sintering, the second surface and the first Surface, the fifth surface and the fourth surface is a thermoelectric conversion temperature sensor, which comprises the steps of bonding to the seventh surface and the sixth surface are in contact.

  The invention according to a seventh aspect is characterized in that, in the sixth aspect, the bonding is performed by a discharge plasma bonding method.

  In order to achieve the above object, the invention according to claim 8 is the first thermoelectric conversion semiconductor of the first conductivity type in the form of powder so that the first surface and the second surface of the first area are opposed to each other. A second thermoelectric conversion semiconductor of the second conductive type in powder form so that the third surface of the first area and the fourth surface of the second area smaller than the first area are opposed to each other. And forming a powdery first-conductivity-type third thermoelectric conversion semiconductor so that the fifth surface of the second area and the sixth surface of the first area are opposed to each other. , Forming a powdery second conductivity type fourth thermoelectric conversion semiconductor so that the seventh surface and the eighth surface of the first area face each other, and the first to fourth after formation The thermoelectric conversion semiconductors are respectively connected to the second surface and the third surface, the fourth surface and the fifth surface, Serial is a method for producing a thermoelectric conversion temperature sensor which comprises a step of sintering so that the seventh surface and the sixth surface are in contact.

  According to the thermoelectric conversion temperature sensor according to the present invention, the plurality of pairs of different thermoelectric conversion semiconductors are joined by changing the area of the junction portion of the different thermoelectric conversion semiconductors, so that the first thermoelectric conversion semiconductor on the outside and the third thermoelectric conversion semiconductor inside. The difference in heat capacity with the thermoelectric conversion semiconductor can be increased. Therefore, an electromotive force larger than that of a temperature sensor using a conventional thermocouple can be obtained with respect to a temperature change.

  In addition, according to the method for manufacturing a thermoelectric conversion temperature sensor according to the present invention, each thermoelectric conversion semiconductor is simply formed and sintered from a powder raw material, so a temperature sensor capable of obtaining a large electromotive force against a temperature change is provided. It can be manufactured easily.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments to which the present invention is applied will be described with reference to the accompanying drawings.

(Embodiment 1)
FIG. 1 is a side view showing a configuration of a thermoelectric conversion temperature sensor according to the first embodiment, and FIG. 2 is a perspective view showing the thermoelectric conversion temperature sensor.

  The thermoelectric conversion temperature sensor 20 is formed by joining thermoelectric conversion semiconductors having P-conductivity type (hereinafter referred to as P-type) and N-conductivity type (hereinafter referred to as N-type) thermoelectric conversion semiconductor characteristics. The thermoelectric conversion semiconductor characteristic mentioned here refers to a characteristic in which an electromotive force is generated due to a temperature difference. In the P-type and the N-type, the generated electromotive force polarity is reversed.

  The thermoelectric conversion temperature sensor 20 of the present embodiment includes a first thermoelectric conversion semiconductor (P-type) 1, a first thermoelectric conversion semiconductor (P-type) 1, a second thermoelectric conversion semiconductor (N-type) 2, and a third thermoelectric conversion semiconductor (P Type) 3 and a fourth thermoelectric conversion semiconductor (N type) 4. The first thermoelectric conversion semiconductor (P-type) 1 has a first surface (referred to as an upper end surface 7) and a second surface 8a, both of which are opposed to each other. The second thermoelectric conversion semiconductor (N-type) 2 has a third surface 8b having a first area and a fourth surface 9a having a second area smaller than the first area. The third thermoelectric conversion semiconductor (P-type) 3 has a fifth surface 9b having a second area and a sixth surface 10a having a first area. The fourth thermoelectric conversion semiconductor (N-type) 4 has a seventh surface 10b and an eighth surface (referred to as a lower end surface 11) having a first area.

  These are in close contact with each other in the order of P-type, N-type, P-type, and N-type. That is, the second surface 8a of the first thermoelectric conversion semiconductor (P type) 1 and the third surface 8b of the second thermoelectric conversion semiconductor (N type) 2 are joined, and the second surface of the second thermoelectric conversion semiconductor (N type) 2 is joined. The fourth surface 9a and the fifth surface 9b of the third thermoelectric conversion semiconductor (P type) 3 are joined, and the sixth surface 10a of the third thermoelectric conversion semiconductor (P type) 3 and the fourth thermoelectric conversion semiconductor (N type) 4 The seventh surface 10b is joined.

  Therefore, the junction surface (first area) 8 between the first thermoelectric conversion semiconductor (P type) 1 and the second thermoelectric conversion semiconductor (N type) 2, and the third thermoelectric conversion semiconductor (P type) 3 and the fourth thermoelectric conversion. With respect to the area of the bonding surface (first area) 10 with the semiconductor (N type) 4, the bonding surface (second surface) between the second thermoelectric conversion semiconductor (N type) 2 and the third thermoelectric conversion semiconductor (P type) 3. The area of (area) 9 is small.

  And as the thermoelectric conversion temperature sensor 20, the conducting wire 5 is soldered to the upper end surface 7 of the 1st thermoelectric conversion semiconductor (P type) 1 which is a termination surface, and the lower end surface 11 of the 4th thermoelectric conversion semiconductor (N type) 4 is used. The lead wire 6 is soldered to.

  When heat (temperature change) is applied to the thermoelectric conversion temperature sensor 20, an electromotive force is generated between the conductors 5 and 6. By amplifying this electromotive force with a separate circuit, for example, it can be used for temperature detection.

  The ratio of the size of the first area and the second area is preferably as large as possible. This is because by increasing the area ratio, a difference occurs in the heat capacities to easily cause a temperature difference, and the maximum electromotive force increases logarithmically with the area ratio. FIG. 12 is a characteristic diagram showing a change with time lapse t (s) of the electromotive force E (mV) when the area ratio is changed. As shown in FIG. 12, it has been confirmed that the electromotive force generated varies depending on the area ratio. FIG. 13 is a characteristic diagram showing the relationship between the area ratio and the maximum electromotive force E (mV). As shown in FIG. 13, it has been confirmed that the maximum electromotive force increases logarithmically with the area ratio.

  On the other hand, thickness L1-L4 of each thermoelectric conversion semiconductor is not specifically limited. For example, all may have the same thickness. Further, the thickness L5 of the portion that becomes the second area may be such that the bonding surface 9 can be reliably bonded with the second area.

  In the method for manufacturing the thermoelectric conversion temperature sensor 20, for example, the respective thermoelectric conversion semiconductors may be formed and then joined, or all may be integrally formed.

  More specifically, when forming each thermoelectric conversion semiconductor, the powder raw material of a thermoelectric conversion semiconductor is shape | molded so that it may become the 1st-4th thermoelectric conversion semiconductor mentioned above. In the molding, the powder raw material is put into a mold having the shape of each of the thermoelectric conversion semiconductors described above and compressed to some extent. Thereafter, predetermined pressure heating is performed to sinter. Thereby, the 1st-4th thermoelectric conversion semiconductor is formed.

  And the formed 1st-4th thermoelectric conversion semiconductor is joined using conductive adhesives, such as soldering and a silver paste, so that each surface may be joined as mentioned above. Then, the thermoelectric conversion temperature sensor 20 is completed by soldering the conducting wires 5 and 6 to the terminal surface.

  As an integrated manufacturing method, for example, powder raw materials to be first to fourth thermoelectric conversion semiconductors are formed to have the respective thermoelectric conversion semiconductor shapes shown in FIGS. 1 and 2, and first to fourth thermoelectric conversions are performed. The conversion semiconductors are stacked and sintered as they are so as to be joined. If it does in this way, formation of a thermoelectric conversion semiconductor and PN junction can be performed at a time, and it will become short of manufacturing cost and manufacturing time.

  The iron silicide thermoelectric conversion elements are molded and sintered by a discharge plasma sintering method under constant pressure, temperature, and time sintering conditions to obtain elements having semiconductor characteristics. In addition, since the metal phase is formed by sintering using a normal electric furnace, an element having semiconductor characteristics cannot be obtained. Although it is possible to process powder by molding in a normal electric furnace, an element having effective semiconductor characteristics cannot be obtained in this case as well.

  As the raw material powder, for example, P-type FeSi2: FeSi2-4.1 mass% Cr and N-type FeSi2: FeSi2-2-2.4 mass% Co are used to manufacture a P-type thermoelectric conversion semiconductor and an N-type thermoelectric conversion semiconductor, respectively. obtain.

  In addition, if a pair of P-type and N-type is connected as one pair, the illustrated form is a form in which two pairs of different thermoelectric conversion semiconductors are connected. Moreover, you may join continuously 3 pairs and 4 pairs. For example, in the case of three pairs, a surface having a second area smaller than the first area (corresponding to the fourth surface 9a of the second thermoelectric conversion semiconductor 2) is provided on the lower end surface 11 of the fourth thermoelectric conversion semiconductor 4 in FIG. The surface is formed and a pair of semiconductors having the same structure as the third thermoelectric conversion semiconductor 3 and the fourth thermoelectric conversion semiconductor 4 are joined to this surface. Alternatively, a surface having a second area smaller than the first area (corresponding to the fifth surface 9b of the third thermoelectric conversion semiconductor 3) is formed on the upper end surface 7 of the first thermoelectric conversion semiconductor 1 in FIG. The first thermoelectric conversion semiconductor 1 and the second thermoelectric conversion semiconductor 2 have a structure in which a pair of semiconductors having the same structure is joined.

  By connecting more thermoelectric conversion semiconductors in this way, the generated electromotive force can generate a large electromotive force substantially in proportion to the logarithm. Therefore, the logarithm of the thermoelectric conversion semiconductor connection may be selected in accordance with the electromotive force necessary for the thermoelectric conversion temperature sensor 20. Moreover, you may join so that the conductivity type of each thermoelectric conversion semiconductor may become order of N type, P type, N type, and P type.

  Next, the operation principle of the thermoelectric conversion temperature sensor 20 according to the present embodiment will be described.

FIG. 3 is an explanatory diagram for explaining the operating principle of the thermoelectric conversion temperature sensor. As shown in FIG. 3, the basic operation principle of the temperature sensor in which different types of thermoelectric conversion semiconductors are bonded is that when the conductor 53 is heated and the electrodes 54 and 55 are cooled, the P-type thermoelectric conversion semiconductor 51 and the N-type thermoelectric conversion semiconductor 52 are used. A temperature difference occurs, an electromotive force is generated by the Seebeck effect of the thermoelectric conversion semiconductor, and a current 56 flows.

  Similar to this principle, when heat is applied to the entire thermoelectric conversion temperature sensor 20 according to the first embodiment, the temperature of the upper end surface 7 rises. At this time, the bonding surface 8 has a larger heat capacity than the upper end surface, and the upper end surface 7 has a higher temperature than the bonding surface 8. For this reason, a temperature difference occurs between the upper end surface 7 and the joint surface 8, causing a thermoelectromotive force. Further, since the bonding surface 9 is processed to have a smaller bonding area than the bonding surface 8, the heat capacity of the bonding surface 8 is larger than that of the bonding surface 9. That is, the joining surface 9 reaches the inside faster than the joining surface 8, and the joining surface 8 is cool and the joining surface 9 is warm. Further, the bonding area of the bonding surface 10 is larger than that of the bonding surface 9, the bonding surface 9 is warm, and the bonding surface 10 is cold. Similarly, the joint surface 10 and the lower end surface 11 are cold and warm.

  Since the directions of the currents of the temperature and cold Seebeck effect of the P-type thermoelectric semiconductor and the N-type thermoelectric semiconductor are opposite, the conductor 5 to the P-type, N-type, P-type, N-type, and the conductor 6 have two pairs. Since the thermoelectric conversion modules are connected in series, a current flows due to the Seebeck effect, and an electromotive voltage is generated between the conductors 5 and 6. It is confirmed from the characteristic diagram of FIG. 8 described later that this electromotive force increases in proportion to the logarithm of P-type-N-type-P-type-N type.

  The thermoelectric conversion temperature sensor 20 of this embodiment does not measure the absolute temperature of heat, but measures the rate of temperature rise of heat. When the temperature is applied to the entire thermoelectric conversion temperature sensor 20, the thermoelectric conversion semiconductor It can be used as a temperature detection device that generates an electromotive force due to the temperature difference of the joint surfaces and determines the temperature difference based on the elapsed time and the rate of increase of the electromotive voltage.

(Embodiment 2)
4 and 5 are diagrams showing a deformed shape of the thermoelectric conversion temperature sensor 40. FIG. In the thermoelectric conversion temperature sensor 20 shown in FIGS. 1 and 2 described above, all of the joint surfaces 8, 9, and 10 of the thermoelectric conversion semiconductors have a circular shape.

  As shown in FIGS. 4 and 5, the thermoelectric conversion temperature sensor 40 according to the second embodiment may have a notch shape 32 in which a part of a circle is notched. Other configurations are the same as those of the first embodiment.

  Even in such a form, an electromotive force can be generated exactly as in the first embodiment. Therefore, the difference in these shapes may be selected variously during sintering or processing.

  The thermoelectric conversion temperature sensor 20 according to the first embodiment to which the present invention is applied was manufactured and tested. A conventional temperature sensor was also tested as a comparative example.

Example 1
In Example 1, as shown in FIGS. 1 and 2, a cylindrical notch thermoelectric conversion temperature sensor made of a thermoelectric conversion semiconductor with W1 = φ20 mm, W2 = φ10 mm, L1 to L4 = 7 mm, and L5 = 4.5 mm was manufactured. .

  The production uses raw material powder P-type FeSi2: FeSi2-4.1 mass% Cr, N-type FeSi2: FeSi2-2-2.4 mass% Co as a thermoelectric conversion semiconductor, with a pressure of 35 MPa, a temperature of 1023 K, and a holding time of 600 s. Under the sintering conditions, a P-type thermoelectric conversion semiconductor and an N-type thermoelectric conversion semiconductor were formed by a discharge plasma sintering method. Each dimension is as described above. This was closely bonded in the order of P-type, N-type, P-type, and N-type. A conductive adhesive such as silver paste was used for this joining.

  FIG. 6 is a characteristic diagram showing changes in electromotive force of the thermoelectric conversion temperature sensor 20 according to the first embodiment.

  The electromotive force was measured by placing the thermoelectric conversion temperature sensor 20 30 degrees higher than room temperature and putting it in a vertical air current at a wind speed of 85 centimeters per second, and measuring the time and electromotive force.

  As shown in FIG. 6, after about 50 seconds, it was saturated to about 3.1 mV, and then the electromotive force decreased. This shows response characteristics similar to those of a thermocouple temperature sensor of Comparative Example 4 to be described later, and indicates that an electromotive force approximately 3.2 times that of the thermocouple temperature sensor of Comparative Example is generated. .

  In addition, it can be seen from the figure that the thermoelectric conversion temperature sensor 20 has a lower electromotive force after the heat is transferred to the whole. Therefore, when designated and used with the thermoelectric conversion temperature sensor 20, the temperature difference can be determined based on the rate of increase while the electromotive force is increasing in the data shown in FIG.

(Comparative Examples 1-3)
The thermoelectric conversion temperature sensor 20 of Comparative Example 1 was manufactured by sintering and joining a P-type thermoelectric conversion semiconductor and an N-type thermoelectric conversion semiconductor each having a diameter of 20 mm and a thickness of 7 mm in the same manner as in Example 1. The thermoelectric conversion temperature sensor 20 is used. Similarly, Comparative Example 2 has a diameter of 1/2, and Comparative Example 3 has a diameter of 1/4 of Comparative Example 1. And the change of the electromotive force in the temperature difference of these thermoelectric conversion temperature sensors 20 was measured.

  Measurement was performed by attaching a heater on one side (high temperature side) and a Peltier cooler on the other side (low temperature side), controlling the temperature, and measuring the voltage between the conductors 5 and 6.

  FIG. 7 is a characteristic diagram showing an electromotive force with respect to a temperature difference in Comparative Examples 1 to 3.

  From FIG. 7, the thermoelectric conversion temperature sensor 20 configured with a pair of 1/1 size, 1/2 size, and 1/4 size has a Seebeck coefficient α (α = V / ΔT, α: Seebeck coefficient, V: electromotive force). The temperature difference: ΔT) = 0.302 can be confirmed from this characteristic diagram. From this result, it can be expected that in the embodiment of the first embodiment to which the present invention is applied, a large electromotive force can be obtained even when the size is further reduced.

(Example 2)
Thermoelectric conversion temperature sensors 20 made of two pairs of thermoelectric conversion semiconductors having the same shape as in Example 1 were further joined to manufacture thermoelectric conversion temperature sensors 20 made of a total of four pairs of thermoelectric conversion semiconductors.

  FIG. 8 is a characteristic diagram showing changes in electromotive force due to differences in the logarithm of thermoelectric conversion semiconductors.

  In FIG. 8, the electromotive force with respect to the temperature difference in each of the pair of thermoelectric conversion temperature sensors 20 of Comparative Example 1, the two pairs of thermoelectric conversion temperature sensors 20 of Example 1, and the four pairs of thermoelectric conversion temperature sensors 20 of Example 2. It is a characteristic view which shows the difference. The measurement of the electromotive force is the same as in Comparative Examples 1 to 3 described above.

  From FIG. 8, the Seebeck coefficient α in the case of one pair of thermoelectric conversion temperature sensors 20 (Comparative Example 1) is 0.302, and the Seebeck coefficient α in the case of two pairs of thermoelectric conversion temperature sensors 20 (Example 1) is 0. 617, the Seebeck coefficient α in the case of four pairs of thermoelectric conversion temperature sensors 20 (Example 2) is 1.31, and it can be seen that an electromotive voltage is generated in proportion to the logarithm.

(Comparative Example 4)
In Comparative Example 4, a thermocouple temperature sensor using 10 pairs of constantan and pure iron was manufactured as shown in FIGS. This thermocouple temperature sensor is a thermocouple temperature sensor of φ2.2 mm × total length 445 mm.

  FIG. 9 is a characteristic diagram obtained by measuring the electromotive force in the thermocouple temperature sensor of Comparative Example 4.

  In the same manner as in Example 1, one thermocouple temperature sensor of Comparative Example 4 was placed at 30 degrees higher than room temperature, and the electromotive force was measured as time passed by putting it in a vertical air current at a wind speed of 85 centimeters per second.

  As shown in FIG. 9, in the thermocouple temperature sensor of this comparative example 4, it was saturated to about 0.98 mV after about 7 seconds, and then the electromotive voltage decreased.

  From the results of the above examples and comparative examples, the thermoelectric conversion temperature sensor 20 to which the present invention is applied has the same response performance as a temperature sensor using a thermocouple, and has a larger electromotive force than the thermocouple temperature sensor. It became clear that The required electromotive force can be easily adjusted by changing the logarithm, size, and heat capacity of the thermoelectric conversion temperature sensor 20. In addition, the temperature characteristics can be changed. Further, it can be reduced in size as compared with the thermocouple temperature sensor, and can be significantly reduced particularly in the longitudinal direction. The thermocouple needs constantan and pure iron to be processed into a hollow special structure, whereas the thermoelectric conversion temperature sensor 20 has a small amount of Cr and Co for semiconductors, and inexpensive Fe and Si powders as main materials. In addition, there is an advantage that the number of joints can be reduced as compared with the thermocouple.

  Further, since the powder raw material can be formed by sintering, manufacturing is facilitated. In particular, the N-type thermoelectric conversion semiconductor and the P-type thermoelectric conversion semiconductor can be joined by the same manufacturing machine as the discharge plasma sintering method. Further, a plurality of P-type thermoelectric conversion semiconductors and N-type thermoelectric conversion semiconductors can be integrally formed simultaneously with sintering, and the manufacturing process can be shortened.

  The thermoelectric conversion temperature sensor 20 according to the present invention having such characteristics can be used in a disaster prevention system as a temperature sensor for an air conditioner, a plant, etc., or as a fire alarm equipment differential sensor, for example. .

It is a side view which shows the structure of the thermoelectric conversion temperature sensor by Embodiment 1. It is a perspective view which shows the thermoelectric conversion temperature sensor by Embodiment 1. FIG. It is explanatory drawing explaining the operating principle of a thermoelectric conversion temperature sensor. It is a side view which shows the structure of the thermoelectric conversion temperature sensor by this Embodiment 2. FIG. It is a perspective view which shows the thermoelectric conversion temperature sensor by Embodiment 2. It is a characteristic view which shows the change of the electromotive force of the thermoelectric conversion temperature sensor of Example 1. FIG. It is a characteristic view which shows the electromotive force with respect to the temperature difference of Comparative Examples 1-3. It is a characteristic view which shows the difference of the electromotive force with respect to the temperature difference in 1 pair of thermoelectric conversion temperature sensors of the comparative example 1, 2 pairs of thermoelectric conversion temperature sensors of Example 1, and 4 pairs of thermoelectric conversion temperature sensors of Example 2. . It is the characteristic view which measured the electromotive force in the thermocouple temperature sensor of the comparative example 4. 6 is a view showing a thermocouple temperature sensor of Comparative Example 4. 6 is a view showing a thermocouple temperature sensor of Comparative Example 4. It is a characteristic view which shows the change with time progress of the electromotive force in the case of changing an area ratio. It is a characteristic view which shows the relationship between an area ratio and the maximum electromotive force.

Explanation of symbols

1 First thermoelectric conversion semiconductor (P type)
2 Second thermoelectric conversion semiconductor (N-type)
3 Third thermoelectric conversion semiconductor (P type)
4 Fourth thermoelectric conversion semiconductor (N-type)
7 1st surface (upper surface)
8 joint surface (first area)
8a 2nd surface 8b 3rd surface 9 Joining surface (2nd area)
9a 4th surface 9b 5th surface 10 Joint surface (1st area)
10a 6th surface 10b 7th surface 11 8th surface (lower end surface)
20 Thermoelectric conversion temperature sensor

Claims (8)

A first thermoelectric conversion semiconductor of a first conductivity type having a first surface and a second surface of a first area;
A second thermoelectric conversion semiconductor of a second conductivity type having a third surface of the first area in contact with the second surface and a fourth surface of a second area smaller than the first area;
A third thermoelectric conversion semiconductor of the first conductivity type having a fifth surface of the second area in contact with the fourth surface and a sixth surface of the first area;
A second conductivity type fourth thermoelectric conversion semiconductor having a seventh surface of the first area in contact with the sixth surface and an eighth surface of the first area;
A thermoelectric conversion temperature sensor characterized in that the semiconductors are continuously joined in the order of different conductivity types. The thermoelectric conversion temperature sensor according to claim 1,
The first surface, the second surface, the third surface, the sixth surface, the seventh surface, and the eighth surface, which are surfaces having the first area, are circular and have the second area . The fourth surface and the fifth surface which are surfaces are circles having a diameter smaller than the circular shape of the first surface , the second surface, the third surface, the sixth surface, the seventh surface, and the eighth surface. thermoelectric temperature sensor you being a shape. The thermoelectric conversion temperature sensor according to claim 1 or 2,
The first surface, the second surface, the third surface, the sixth surface, the seventh surface, and the eighth surface, which are surfaces having the first area, are circular and have the second area . The fourth surface and the fifth surface, which are surfaces , cut a part of the circular shape of the first surface , the second surface, the third surface, the sixth surface, the seventh surface, and the eighth surface. thermoelectric temperature sensor you being a shape lacking. In the thermoelectric conversion temperature sensor of any one of Claims 1-3,
Thermoelectric temperature sensor you wherein in which the junction of the thermoelectric conversion semiconductor each other are joined by a discharge plasma bonding method. The thermoelectric conversion temperature sensor according to claim 1,
The thermoelectric conversion temperature sensor you wherein each thermoelectric conversion semiconductor is one that was sintered as in a state of being integrally joined. Molding and sintering the first thermoelectric conversion semiconductor of the powdery first conductivity type so that the first surface and the second surface of the first area are opposed to each other;
The second thermoelectric conversion semiconductor of the powdery second conductivity type is molded and sintered so that the third surface of the first area and the fourth surface of the second area smaller than the first area are opposed to each other. And steps to
Molding and sintering the powdery first conductivity type third thermoelectric conversion semiconductor so that the fifth surface of the second area and the sixth surface of the first area are opposed to each other;
Molding and sintering the powdery second conductivity type fourth thermoelectric conversion semiconductor so that the seventh surface and the eighth surface of the first area are opposed to each other;
The first to fourth thermoelectric conversion semiconductors after sintering are joined such that the second surface and the third surface, the fourth surface and the fifth surface, and the sixth surface and the seventh surface are in contact with each other. And steps to
The manufacturing method of the thermoelectric conversion temperature sensor characterized by the above-mentioned. In the manufacturing method of the thermoelectric conversion temperature sensor according to claim 6,
Step method for producing a thermoelectric conversion temperature sensor you characterized in that joining by discharge plasma bonding method of the joint. Forming a powdery first conductivity type first thermoelectric conversion semiconductor so that the first surface and the second surface of the first area face each other;
Forming a second thermoelectric conversion semiconductor of powdery second conductivity type such that the third surface of the first area and the fourth surface of the second area smaller than the first area are opposed to each other;
Molding the powdery first conductivity type third thermoelectric conversion semiconductor so that the fifth surface of the second area and the sixth surface of the first area are opposed to each other;
Forming a powdery second conductivity type fourth thermoelectric conversion semiconductor so that the seventh surface and the eighth surface of the first area are opposed to each other;
The first to fourth thermoelectric conversion semiconductors after forming are sintered so that the second surface and the third surface, the fourth surface and the fifth surface, and the sixth surface and the seventh surface are in contact with each other. And steps to
The manufacturing method of the thermoelectric conversion temperature sensor characterized by the above-mentioned.

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