JP5115256B2 - Manufacturing method of display device - Google Patents

Description

The present invention relates to a manufacturing method of a display equipment using an organic EL (Electroluminescence) element.

  In recent years, as a next-generation display device following a liquid crystal display (LCD), a light-emitting element type display panel in which self-light-emitting elements such as organic electroluminescence elements (hereinafter abbreviated as “organic EL elements”) are two-dimensionally arranged. Research and development for full-scale practical application and dissemination of display devices are actively underway.

  The organic EL element includes, for example, an organic EL layer having an anode electrode, a cathode electrode, and an electron injection layer, a light emitting layer, a hole injection layer, and the like formed between these electrodes. In the organic EL element, light is emitted by energy generated by recombination of holes and electrons respectively supplied from the hole injection layer and the electron injection layer in the light emitting layer.

Such an organic EL is sealed with a sealing substrate, a sealing substrate adhesive or the like to prevent deterioration due to water as disclosed in Patent Document 1. The sealing substrate adhesive bonds two substrates and suppresses intrusion of water or the like between the substrates.
JP 2000-294369 A

  By the way, the sealing substrate adhesive is generally formed so as to surround the outer peripheral edge of the display region. However, for the convenience of the design of the display device, for example, the inside of the display region may be sealed. In such a case, an organic EL layer, an electrode, or the like is formed in the display region, and when a sealing substrate adhesive is formed on these, the sealing resin does not bond firmly and good sealing is achieved. There was a problem that it was difficult.

The present invention has been made in view of the above, and an object thereof is to provide a manufacturing method of a display equipment also was sealed satisfactorily sealed in the display area.

In order to achieve the above object, a method for manufacturing a display device according to the first aspect of the present invention includes:
An organic layer forming step of forming an organic layer on at least the pixel electrode of the pixel substrate on which the pixel electrode and the insulating layer are formed;
An electrode layer step of forming an electrode layer on the insulating layer in a region where a sealing portion is formed;
A removing step of removing the electrode layer formed in the region where the sealing portion is formed in the display region by irradiating the laser beam;
Prior to the removing step, a protective film forming step of forming a protective film that reflects the laser beam corresponding to a region where the sealing portion is formed on the insulating layer and a region where the insulating layer is not provided When,
A sealing part forming step of forming the sealing part having a resin on the protective film;
A sealing step of overlaying a sealing substrate on the sealing portion to cure the resin, and sealing the pixel substrate with the sealing substrate;
An opening forming step of forming an opening in the protective film in a region where the insulating layer is not provided, the pixel substrate corresponding to the protective film, and the sealing substrate;
A drive shaft installation step in which a drive shaft for driving the pointer is installed in the opening ; and
The insulating film under the protective film covers the wiring.

  In the removing step, the organic layer below the electrode layer may also be removed.

  In the removing step, it is preferable to change the wavelength of the laser beam when removing the electrode layer and the organic layer.

  The protective film may be made of glass or metal.

According to the present invention, by removing a layer formed in a region for forming a sealing portion, it is possible to provide a manufacturing method of the well was sealed display equipment.

  A display device and a method for manufacturing the display device according to an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, the display device will be described by taking as an example a configuration in which a pointer meter is installed in a display region in which organic EL elements are arranged. Such a display device is used in, for example, a clock.

  A configuration example of a display device according to an embodiment of the present invention is shown in FIG. 2 is a cross-sectional view of the display device shown in FIG. 1, and FIG. 3 is a diagram showing a configuration example of the display unit 11. As shown in FIG.

  As shown in FIGS. 1 to 3, the display device 10 of the present embodiment includes a display unit 11 in which pixels (organic EL elements) 20 are two-dimensionally arranged, a short hand 13, a long hand 14, a second hand 15, and these A driving shaft 16 for driving the pointer and a pointer driving device 17 are provided. An opening 11a is provided at the center of the display unit 11, and a drive shaft 16 is installed in the opening 11a.

  The display unit 11 includes a plurality of pixels 20, a pixel substrate 21, a sealing substrate 22, an outer sealing portion 23 provided so as to surround an outer peripheral edge of the plurality of pixels 20, and an inner side of the outer sealing portion 23. And an inner sealing portion 24 provided so as to surround the inner peripheral edge. The pixel 20 emits red (R), green (G), and blue (B) light, and the RGB pixel 20 forms a set of pixel units. The pixel unit may be a stripe arrangement in which a plurality of pixel units are repeatedly arranged in the row direction and a plurality of pixels of the same color are arranged in the column direction on the pixel substrate 21, and the RGB pixels 20 are adjacent to each other. It may be a delta arrangement with a triangular arrangement. Each of the RGB pixels 20 includes an organic EL element 20a and a drive circuit DS for driving the organic EL element. In the present embodiment, the organic EL element 20a is a bottom emission type, and has a configuration in which light is extracted from the pixel substrate 21 side on which the organic EL element 20a is formed. The display unit 11 may be a monochromatic light emitting display. In such a structure, the plurality of pixels 20 are the same monochromatic light emitting pixel, and a partition wall 35 for partitioning the pixels for each color described later is not necessary.

  The pointer driving device 17 is constituted by a motor, for example, and the pointers are rotated by the pointer driving device 17. Each pointer is provided on the side of the pixel substrate 21 from which light is extracted, and the pointer driving device 17 is provided on the sealing substrate 22 side.

  Next, an arrangement example of the pixels 20 is shown in FIG. 4, and an equivalent circuit DS of each pixel 20 is shown in FIG. Further, FIG. 6 is a plan view of each pixel 20, and FIG. 7 is a sectional view taken along line VII-VII shown in FIG. 8 is a diagram showing a configuration example of a region near the opening 11a of the display unit 11, and FIG. 9 is a cross-sectional view taken along the line IX-IX shown in FIG. For the sake of illustration, the pixel 20 in FIGS. 8 and 9 is shown with a part of the pixel 20 omitted.

  Each pixel 20 includes an organic EL element 20a and a pixel circuit DS that actively operates the organic EL element 20a. The pixel circuit DS includes a transistor (selection transistor) Tr11, a transistor (light emission drive transistor) Tr12, and a capacitor. Cs. Each of the transistors Tr11 and Tr12 illustrated in FIG. 5 is an n-channel amorphous silicon thin film transistor, but is not limited thereto, and at least one of them may be a p-channel type or a polysilicon thin film transistor.

  The display unit 11 includes a plurality of anode lines La connected to a plurality of pixel circuits DS arranged in a predetermined row, a data line Ld connected to a plurality of pixel circuits DS arranged in a predetermined column, respectively. A plurality of scanning lines Ls for selecting the transistors Tr11 of the plurality of pixel circuits DS arranged in a predetermined row are formed.

  As shown in FIG. 5, the gate terminal of the selection transistor Tr11 is connected to the scanning line Ls, the drain terminal is connected to the data line Ld arranged in the column direction of the pixel substrate 21, and the source terminal is connected to the contact N11. The gate terminal of the light emission drive transistor Tr12 is connected to the contact N11, the drain terminal is connected to the supply voltage line La, and the source terminal is connected to the contact N12. The capacitor Cs is connected to the gate terminal and the source terminal of the transistor Tr12. Note that the capacitor Cs is an auxiliary capacitance additionally provided between the gate and the source of the transistor Tr12 or a capacitance component composed of these parasitic capacitance and auxiliary capacitance. In the organic EL element 20a, the anode terminal (pixel electrode 34) is connected to the contact N12, and the reference voltage Vss is applied to the cathode terminal (counter electrode 41). Note that when the transistor Tr11 and the transistor Tr12 are p-channel field effect transistors, the source terminal and the drain terminal are connected in the opposite direction to that in FIG. 2, and one end of the capacitor Cs is connected to the anode line La.

  The scanning line Ls is connected to a scanning driver (not shown), and a selection voltage signal (scanning signal) Ssel for setting a plurality of pixels 20 arranged in the row direction of the display panel to a selected state at a predetermined timing. Is applied. The data line Ld is connected to a data driver (not shown), and a data voltage (gradation signal) Vpix corresponding to display data is applied at a timing synchronized with the selection state of the pixel 20. The scan driver and the data driver may be separate IC chips or the same IC chip.

  A plurality of transistors Tr12 arranged for each row are set to a state in which a light emission drive current corresponding to display data flows through the pixel electrode (for example, an anode electrode) of the organic EL element 20a connected to the transistor Tr12. Each of the anode lines La (supply voltage line) is directly or indirectly connected to a predetermined high potential power source. That is, the anode line La is applied with a predetermined high potential (supply voltage Vdd) sufficiently higher than the reference voltage Vss applied to the counter electrode 41 of the organic EL element 20a. In addition, the counter electrode 41 is directly or indirectly connected to a predetermined low potential power source, for example, and is a single electrode layer for all the pixels (organic EL elements) arranged two-dimensionally on the insulating substrate 11. And is set so that a predetermined low voltage (reference voltage Vss, for example, ground potential GND) is applied in common.

  That is, in each pixel, the supply voltage Vdd and the reference voltage Vss are applied to both ends of the pair of the transistor Tr12 and the organic EL element 20a connected in series (the drain terminal of the transistor Tr12 and the cathode terminal of the organic EL element 20a), respectively. Thus, a forward bias is applied to the organic EL element 20a so that the organic EL element 20a can emit light, and the current value of the light emission drive current that flows according to the gradation signal Vpix is controlled by the pixel circuit DS.

  Further, in the present embodiment, as shown in FIGS. 2 and 3, inner sealing formed by curing at least one of a photocurable resin and a thermosetting resin in the central region of the pixel substrate 21 and the sealing substrate 22. An opening 11 a is formed after the pixel 20 is sealed by forming the portion 24. Therefore, as shown in FIG. 8, on the pixel substrate 21, the anode line La and the scanning line Ls running in the column direction and the data line Ld running in the row direction are wired so as to bypass the region where the opening 11a is formed. Yes. Further, these wirings are arranged in a region where the inner sealing portion 24 is formed as shown in FIG. Further, as will be described in detail later, in the present embodiment, a protective film 40 made of metal or the like is formed in a region where the inner sealing portion 24 is formed.

  Next, the pixel substrate 21 is formed from a material having translucency, for example, a glass substrate. Further, as shown in the figure, the data line Ld, the gate electrodes 56a and 56b, and the insulating film 32 are formed on the pixel substrate 21.

  The insulating film 32 is made of an insulating material, such as a silicon oxide film or a silicon nitride film, and is formed on the pixel substrate 31 so as to cover the gate electrodes 56a and 56b. The insulating film 32 functions as a gate insulating film for the transistors Tr11 and Tr12 in the region where the gate electrodes 56a and 56b are formed.

  The transistors Tr11 and Tr12 are each an n-channel thin film transistor (TFT). The transistors Tr11 and Tr12 are formed on the pixel substrate 21, respectively. The transistor Tr11 includes a semiconductor layer 51a, a source electrode 52s, a drain electrode 53d, an ohmic contact layer (not shown), a gate electrode 56a, and a protective insulating film (not shown). As shown in FIG. 7, the transistor Tr12 includes a semiconductor layer 51b, a drain electrode 52d, a source electrode 53s, ohmic contact layers 54b and 55b, a gate electrode 56b, and a protective insulating film 57b. The source electrode 53s of Tr12 is connected to the pixel electrode 34.

  In the transistors Tr11 and Tr12, the gate electrodes 56a and 56b are made of, for example, aluminum-neodymium-titanium (AlNdTi) or chromium (Cr). The drain electrodes 53d and 52d and the source electrodes 52s and 53s are made of, for example, aluminum-titanium (AlTi) / Cr, AlNdTi / Cr, or Cr. In addition, an ohmic contact layer including a semiconductor containing an impurity is formed between each drain electrode and the source electrode and the semiconductor layer for low resistance contact.

  If the display device 10 is a bottom emission type, the pixel electrode (anode electrode) 34 formed on the insulating film 32 is made of a light-transmitting conductive material, for example, ITO (Indium Tin Oxide), ZnO, or the like. . Each pixel electrode 34 is interposed in the interlayer insulating film 33 between the pixel electrodes 34 of other adjacent pixels 20.

  The interlayer insulating film 33 is formed from an insulating material such as SiN. The interlayer insulating film 33 has a plurality of openings 33a that protect the transistors Tr11 and Tr12 and open on each pixel electrode 34 that is a region corresponding to the light emitting region. In the case of the stripe arrangement described above, each opening 33a is formed in a stripe shape so as to open a plurality of pixels 20 of the same color along the column direction. In the case of the delta arrangement, each opening 33a is provided for each pixel 20. ing. Thus, organic EL layers such as a hole injection layer 36 and a light emitting layer 37 described later are formed on the pixel electrode 34 exposed through the opening 33 a of the partition wall 35. When the display unit 11 is a monochromatic light emitting display, the partition wall 35 is not provided, and the protective film 40 is formed on the interlayer insulating film 33, and not only in the opening 33 a of the interlayer insulating film 33 but also on the interlayer insulating film 33. Also, an organic EL layer is continuously deposited.

  The partition wall 35 is formed by curing an insulating material such as polyimide or acrylic resin, and is provided on the upper surface of the interlayer insulating film 33. The partition wall 35 has an opening that is slightly wider than the opening 33 a that is formed according to the shape of the opening 33 a of the interlayer insulating film 33. The opening of the partition wall 35 is formed in a stripe shape if the opening 33a of the interlayer insulating film 33 is in a stripe shape, and individually if the opening 33a of the interlayer insulating film 33 is formed for each pixel 20. Are formed for each pixel 20. Further, the partition wall 35 is not provided in a region where the inner sealing portion 24 is formed, and a protective film 40 is formed on the interlayer insulating film 33 in the region as shown in FIG. Yes.

  The hole injection layer 36 is formed on the pixel electrode 34 and has a function of supplying holes to the light emitting layer 37. The hole injection layer 36 is made of an organic polymer material that can inject and transport holes. In the present embodiment, when forming the hole injection layer 36, a polyethylene polymer which is a conductive polymer is used as an organic compound-containing liquid containing an organic polymer-based hole injection / transport material to be the hole injection layer 36. A PEDOT / PSS aqueous solution, which is a dispersion in which oxythiophene (PEDOT) and polystyrene sulfonate (PSS) as a dopant are dispersed in an aqueous solvent, is used.

  The light emitting layer 37 is formed on the hole injection layer 36. The light emitting layer 37 has a function of generating light by applying a predetermined voltage between the anode electrode and the cathode electrode. The light emitting layer 37 is a known polymer light emitting material capable of emitting fluorescence or phosphorescence, for example, red (R) or green (G) containing a conjugated double bond polymer such as polyparaphenylene vinylene or polyfluorene. And a blue (B) light emitting material. In addition, these light-emitting materials are appropriately coated with an aqueous solvent or a nozzle coating method in which a solution (dispersion) dissolved (or dispersed) in an organic solvent such as tetralin, tetramethylbenzene, mesitylene, xylene, etc. It forms by apply | coating by the inkjet method etc. which discharge the isolate | separated several droplet, and volatilizing a solvent.

  The counter electrode (cathode electrode) 41 includes an electron injection layer 38 and a low resistance layer 39. The electron injection layer 38 is a layer having a thickness of about 10 nm formed from a material having a low work function, such as Ba, Ca, Mg, Li, or the like, or a compound containing at least one of them. In the present embodiment, the low resistance layer 39 is composed of a single electrode layer formed across the plurality of pixels 20, and the electron injection layer 38 is also formed on the entire surface of the pixel substrate 21.

  The low resistance layer 39 is formed of a conductive material such as Al or Al alloy, and is a layer having a thickness of about 200 nm in order to reduce the sheet resistance of the counter electrode 41. The low resistance layer 39 is composed of a single electrode layer formed across the plurality of pixels 20, and is formed on the entire surface of the pixel substrate 21. The electron injection layer 38 is formed of Ba, Ca, or the like, and these films have a low work function and thus are easily oxidized. The low resistance layer 39 also has a function of protecting these films from oxidation.

  The protective film 40 is formed corresponding to the region where the inner sealing portion 24 is formed on the partition wall 35. In this embodiment, the inner sealing portion 24 is formed in an annular shape, and thus the protective film 40 is also formed in an annular shape. Is done. The protective film 40 is a single layer made of glass, Al or Al alloy, or a Cr lower layer so that the protective film 40 is satisfactorily bonded to the inner sealing portion 24 formed of epoxy resin or the like and the interlayer insulating film 33 such as SiN. A laminated structure composed of an upper layer of Al or an Al alloy is preferable. In this embodiment, as will be described in detail later, an organic layer such as a light emitting layer, an electron injection layer 38, a low resistance layer 39, and the like formed in a region where the inner sealing portion 24 is formed are removed by laser ablation. To do. At this time, the protective film 40 preferably reflects the laser beam particularly preferably so that the wiring layer under the interlayer insulating film 33 can be protected, and is formed of a metal having a desired reflectance. preferable. In addition, the inner sealing portion 24 has a structure in which the pixel substrate 21 and the sealing substrate 22 are bonded and bonded together, and thus the weight and load of the bonding manufacturing process are concentrated and easily applied. . For this reason, if the electron injection layer 38 and the low resistance layer 39 are present in the region where the inner sealing portion 24 is formed, peeling between the electron injection layer 38 and the low resistance layer 39 is likely to occur. However, since the electron injection layer 38 and the low resistance layer 39 are not disposed below the inner sealing portion 24, water and oxygen enter from the end face of the opening 11a of the display portion 11. The structure is difficult to do.

  Next, a method for manufacturing a display device that emits multicolor light such as RGB according to an embodiment of the present invention will be described with reference to FIGS. In the case of a display device for monochromatic light emission display, it is substantially the same as the manufacturing method shown below except that there is no manufacturing process of the partition wall 35.

  First, a pixel substrate 21 made of a glass substrate or the like is prepared. The pixel substrate 21 has an area where a plurality of display portions 11 can be formed simultaneously. Next, a metal film is formed on the pixel substrate 31 by a sputtering method, a vacuum deposition method, or the like, and is patterned into the shape of the data line Ld and the gate electrodes 56a and 56b as shown in FIG.

  Subsequently, an insulating film 32 made of SiN, SiO or the like is formed on the gate electrodes 56a and 56b by a CVD (Chemical Vapor Deposition) method or the like. Next, semiconductor layers 51a and 51b are formed on the insulating film 32. Further, protective films 57a and 57b are formed on the upper surfaces of the semiconductor layers 51a and 51b, and ohmic contact layers and transistors of the transistor Tr11 in which n-type impurities are contained in amorphous silicon. The ohmic contact layers 54b and 55b of Tr12 are formed.

  Next, as shown in FIGS. 6 and 10B, a pixel electrode 34 is formed on the insulating film 32 by sputtering, vapor deposition, or the like. Furthermore, the drain electrodes 53d and 52d and the source electrodes 52s and 53s are formed by sputtering, vacuum deposition, or the like.

  Subsequently, an interlayer insulating film 33 made of silicon nitride or the like is formed by a CVD method or the like so as to cover the formed transistors Tr11 and Tr12. Further, an opening 35a is formed in a region corresponding to the light emitting region of the pixel 20 by photolithography or the like, and the pixel electrode 34 is exposed.

  Next, a partition wall 35 made of, for example, polyimide is formed on the interlayer insulating film 33 by photolithography or the like as shown in FIG. At this time, the partition wall 35 is not provided in a region where the inner sealing portion 24 is formed. In the case of a display device for monochromatic light emission display, the partition wall 35 may not be formed. However, the presence of the partition wall 35 is a parasitic between the signal line such as the data line Ld and the scanning line Ls and the counter electrode 41. In order to reduce the capacity, it is desirable to arrange the partition wall 35 above the signal line such as the data line Ld.

  In this manner, the TFT circuit, the pixel electrode 34, the interlayer insulating film 33, and the partition wall 35 are formed on the pixel substrate 21.

  Next, as shown in FIG. 10C, the protective film 40 is formed on the interlayer insulating film 33 through a mask 81 having an opening corresponding to the region where the inner sealing portion is to be formed by a vacuum deposition method or the like. . The protective film 40 is made of a material having high reflectivity at the wavelength used for laser ablation and having good adhesion with the interlayer insulating film 33 such as SiN and the epoxy resin that forms the inner sealing portion 24. For example, aluminum or an aluminum alloy, or a plurality of layers in which a layer of chromium or the like is formed on an aluminum underlayer on the surface is used. Since such a protective film 40 can be patterned with a mask, an increase in the photolithography process can be prevented. Furthermore, by using a material having good laser light reflectivity, the wiring formed under the interlayer insulating film 33 can be protected during laser ablation.

  Subsequently, a liquid containing water as a main component (hereinafter referred to as PEDOT-containing liquid) in which a hole injection material (PEDOT as a conductive polymer and PSS as a dopant) is dispersed is used as an inkjet or It is applied on the pixel substrate 21 by a method such as a nozzle coater for flowing a continuous liquid. At this time, the partition wall 35 partitions the liquid so that it does not leak out of the pixels. After application of PEDOT, drying is performed at a temperature of 100 ° C. or higher. In the case of a display device for monochromatic light-emitting display, the same light-emitting material may be used, so that it is not necessary to partition for each light-emitting layer or for each light-emitting layer of the same color row, so that the partition wall 35 does not have to be formed. For this reason, the hole injection material-containing liquid can be applied by spin coater, spraying, printing, dipping in addition to the above-described ink jet and the like, and the hole injection layer 36 is also formed in the region where the inner sealing portion 24 is formed. Is done. Even in the case of multi-color light emitting display, when the hole injection layer 36 is common to pixels of different colors, a liquid containing a hole injection material is applied by spin coater, spraying, printing, dipping, and the inner sealing portion 24 is formed. The hole injection layer 36 may also be formed in the region to be formed. That is, although not shown in FIG. 11A, the hole injection layer 36 may also be formed on the protective film 40.

  Next, a light-emitting material-containing liquid obtained by dissolving red, green, and blue light-emitting materials (polyfluorene-based) in an organic solvent such as tetralin, tetramethylbenzene, and mesitylene is used to form the interlayer insulating film 33 by a method such as inkjet or nozzle coater. Films are formed on the hole injection layer 36 surrounded by the opening 33a and the opening of the partition wall 35, respectively. After forming the light emitting material, the residual solvent is removed by heat drying in a nitrogen atmosphere or heat drying in a vacuum. Thereby, the light emitting layer 37 is formed. When the display unit 11 performs monochromatic light emission display, the hole injection layer 36 and the light emitting layer 37 may be continuously deposited not only in the opening 33 a of the interlayer insulating film 33 but also on the interlayer insulating film 33. In addition, in a display device for monochromatic light-emitting display, the light-emitting material-containing liquid can be applied by spin coater, spray, printing, dipping in addition to the above-described inkjet, and in this case, in this case, the region where the inner sealing portion 24 is formed The light emitting layer 37 is also formed.

  An electron injection layer 38 made of Ca, Ba, or the like is formed on the pixel substrate 21 formed up to the light emitting layer 37 by vacuum deposition or sputtering as shown in FIG. As described above, since the electron injection layer 38 is formed in common among the plurality of pixels 20, it is formed on the entire surface of the pixel substrate 21 including the region where the inner sealing portion 24 is formed.

  Further, a low resistance layer 39 is formed on the electron injection layer 38 on the entire surface of the pixel substrate 21 including the region where the inner sealing portion 24 is formed by vacuum deposition or sputtering, as shown in FIG. . In the display device for monochromatic light emitting display, the electron injection layer 38 and the low resistance layer 39 are deposited on the light emitting layer 37 even in the region where the inner sealing portion 24 is formed.

  Next, as shown in FIG. 11B, the electron injection layer 38 formed on the protective film 40 by laser ablation using a mask 82 having an opening in the region where the inner sealing portion 24 is formed. Then, the low resistance layer 39 is removed. Specifically, the low resistance layer 39 and the electron injection layer 38 are removed with near infrared rays such as Nd: YAG laser light. In addition, when at least one of the hole injection layer 36 and the light emitting layer 37 is deposited in the region where the inner sealing portion 24 is formed, in addition to the electron injection layer 38 and the low resistance layer 39, At least one of the hole injection layer 36 and the light-emitting layer 37 formed in the step is also removed. First, the low resistance layer 39 and the electron injection layer 38 are removed with near infrared rays such as Nd: YAG laser light, and then holes are formed with ultraviolet laser light such as third harmonic of Nd: YAG laser light. At least one organic material of the injection layer 36 and the light emitting layer 37 is removed. At this time, the power of the laser beam is adjusted so as not to damage the protective film 40. In addition, there exists an advantage that it can be set as a single laser light source by using the 3rd harmonic of a near-infrared laser beam as an ultraviolet laser beam.

  Next, as shown in FIG. 12 (a), an outer sealing portion 23 formed by curing an ultraviolet curable resin or a thermosetting resin and an inner sealing portion 24 are dispensed using a dispenser in an inert gas atmosphere. Or, it is applied to each predetermined region on the sealing substrate by a screen printing method. Note that a sealing resin may be applied to the pixel substrate side. It is also possible to mix a spacer for maintaining a gap between the two substrates. At this time, it is preferable to use a spacer having a deformation rate that does not damage the portion where the wiring under the region where the sealing resin is formed intersects.

  Next, the pixel substrate 21 and the sealing substrate 22 are overlapped and brought into close contact with pressure, and the pressure is gradually returned to normal pressure. After returning to normal pressure, UV irradiation or heat is applied to cure the resin and complete sealing. Note that a getter agent having a moisture absorption and oxygen absorption function may be provided between the substrates.

  Next, the pixel substrate 21 sealed by the sealing substrate 22 by the above steps is scribed and broken at a predetermined location to obtain a plurality of display portions 11.

  A plurality of the display units 11 cut out are overlapped, and an opening 11a is formed in the central region by a drill or the like as shown in FIG.

  Next, the short hand 13, the long hand 14 and the second hand 15 are installed on the light extraction surface side of the pixel substrate, the driving shaft 16 is installed in the opening 11 a, and the pointer driving device 17 is installed on the sealing substrate 22. Is done.

  In this embodiment, by removing the organic layer such as the hole injection layer, the electron injection layer, and the low resistance layer in the region where the inner sealing portion 24 is formed by laser ablation, the inner sealing portion 24 is removed. Application is performed, and the pixel substrate and the sealing substrate are sealed. Thereby, the electron injection layer 38 and the low resistance layer 39 that are easily peeled off can be removed, and organic substances that cause a decrease in the adhesion of the sealing resin can be removed. Therefore, the sealing resin can be firmly bonded to the substrate, and the reliability of the display device can be ensured.

  As a method for preventing the formation of an electron injection layer or the like that lowers the adhesion under the inner sealing portion, for example, vacuum deposition or sputtering is performed using a metal mask as shown in FIG. It is also conceivable to form a resistance layer. However, in order to prevent film formation in the inner sealing portion region, the central region needs to be masked, and a stay for supporting the mask is indispensable. For this reason, since an electron injection layer or the like is not formed in the region under the stay, there is a problem that a region where light cannot be emitted occurs in the display region.

  On the other hand, in this embodiment, an organic layer, an electron injection layer, and the like are formed, and these layers are removed by laser ablation in a region where the inner sealing portion is formed. Therefore, unlike a conventional method using a metal mask, there is no region where an electron injection layer or the like cannot be formed in the display region, and the entire display region can emit light.

  In particular, in the present embodiment, the protective film 40 can be bonded to the sealing portion by forming the protective film 40 from a material having good adhesion to the sealing portion. When leather ablation is performed, it is possible to prevent damage to the partition wall 35 and damage to the wiring formed under the partition wall 35.

  Furthermore, in the embodiment, since the protective film 40 is patterned with a metal mask, it is advantageous from the viewpoint of manufacturing cost without increasing the number of photolithography processes. Further, in this embodiment, since the light source used for laser ablation uses a near-infrared laser typified by Nd: YAG and its harmonics, it can be manufactured with a single laser light source and is easy to manufacture, Manufacturing costs do not increase.

The present invention is not limited to the above-described embodiments, and various modifications and applications are possible.
In the embodiment described above, the configuration in which the protective film 40 is formed has been described as an example. However, if the influence of the laser beam on the wiring layer formed below the partition wall 35 is small, the protective film 40 is not formed. Good.

  Further, in the above-described embodiment, a description has been given by taking as an example a configuration in which a pointer is attached to the pixel substrate side, a bottom emission type organic EL element is formed on the pixel substrate, and light is extracted from the pixel substrate side. However, the present invention is not limited thereto, and a pointer portion is formed on the sealing substrate side, a top emission type organic EL element that emits display light outward from the sealing substrate is formed, and light is extracted from the sealing substrate side. It is also possible. In this case, the pixel electrode uses a light-reflective metal layer such as Al and a two-layer structure of the above-described transparent conductive layer such as ITO laminated thereon, and the low resistance layer has a light-transmitting property such as ITO. An electrode provided may be used. In this case, the pointer driving device 17 may be provided on the pixel substrate 21 side.

  Further, in the present embodiment, the configuration in which one opening is formed in the central region surrounded by the outer sealing portion has been described as an example. However, the present invention is not limited to this, and the region in which the opening is formed is arbitrary, and a plurality of pointers A plurality of openings may be formed by providing a portion or the like. In the present embodiment, the configuration in which the opening 11a penetrating the pixel substrate 21 and the sealing substrate 22 is formed and the drive shaft 16 is installed has been described as an example. However, the present invention is not limited thereto. It is possible to form an opening in the opening or not.

  In the above-described embodiment, the pixel circuit of the pixel 20 is configured to include two transistors. However, the example is merely an example, and the pixel circuit includes three or more transistors. It may be a thing and may be comprised with one transistor. Furthermore, the pixel 20 is not limited to the active drive configuration, and may be passively driven.

  In the present embodiment, the pixel 30 has been described with an example of a configuration that emits RGB colors. However, the present invention is not limited to this, and the number of colors to be generated is arbitrary.

  In the above-described embodiment, the display device is provided with a pointer and is used for a timepiece or the like as an example. However, the present embodiment is not limited to this and can be used for other than the timepiece.

It is a top view which shows the structural example of the display apparatus which concerns on embodiment of this invention. It is sectional drawing which shows the structural example of the display apparatus which concerns on embodiment of this invention. It is a figure which shows a display part. It is a figure which shows the structural example of a display part. It is a figure which shows the equivalent circuit of the drive circuit of a pixel. It is a top view of a pixel. It is the VII-VII sectional view taken on the line shown in FIG. It is a figure which shows the pixel substrate of the area | region vicinity in which an inner side sealing part is formed. It is the IX-IX sectional view taken on the line shown in FIG. It is a figure which shows the manufacturing method of the display apparatus which concerns on embodiment of this invention. It is a figure which shows the manufacturing method of the display apparatus which concerns on embodiment of this invention. It is a figure which shows the manufacturing method of the display apparatus which concerns on embodiment of this invention. It is a figure which shows the mask used conventionally.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Display apparatus, 11 ... Display part, 11a ... Opening, 13 ... Short hand, 14 ... Long hand, 15 ... Second hand, 16 ... Drive shaft, 17 ... Pointer Driving device, 20... Pixel, 21... Pixel substrate, 22... Sealing substrate, 23... Outer sealing portion, 24. ... Interlayer insulating film, 34 ... Pixel electrode, 35 ... Partition wall, 36 ... Hole injection layer, 37 ... Light emitting layer, 38 ... Electron injection layer, 39 ... Low Resistance layer, 40 ... protective film, Cs ... capacitor, La ... anode line, Ld ... data line, Ls ... select line, Tr11, Tr12 ... transistor

Claims (4)

An organic layer forming step of forming an organic layer on at least the pixel electrode of the pixel substrate on which the pixel electrode and the insulating layer are formed;
An electrode layer step of forming an electrode layer on the insulating layer in a region where a sealing portion is formed;
A removing step of removing the electrode layer formed in the region where the sealing portion is formed in the display region by irradiating the laser beam;
Prior to the removing step, a protective film forming step of forming a protective film that reflects the laser beam corresponding to a region where the sealing portion is formed on the insulating layer and a region where the insulating layer is not provided When,
A sealing part forming step of forming the sealing part having a resin on the protective film;
A sealing step of overlaying a sealing substrate on the sealing portion to cure the resin, and sealing the pixel substrate with the sealing substrate;
An opening forming step of forming an opening in the protective film in a region where the insulating layer is not provided, the pixel substrate corresponding to the protective film, and the sealing substrate;
A drive shaft installation step in which a drive shaft for driving the pointer is installed in the opening ; and
The method for manufacturing a display device, wherein the insulating film under the protective film covers a wiring.   The method for manufacturing a display device according to claim 1, wherein the removing step also removes the organic layer below the electrode layer.   The method for manufacturing a display device according to claim 2, wherein, in the removing step, the wavelength of the laser beam is changed when removing the electrode layer and the organic layer.   The method for manufacturing a display device according to claim 1, wherein the protective film is made of glass or metal.

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