JP5104000B2 - Manufacturing method of imprint mold - Google Patents

Description

  The present invention relates to a method for manufacturing an imprint mold.

  In imprint lithography, an imprint mold is pressed to transfer a concavo-convex pattern in a pattern area on the surface of the imprint mold to a transfer object. For example, in a micro electro mechanical system (MEMS) device such as an angular velocity sensor, there are cases where large different figures such as dimensions of several tens of nanometers and several millimeters are mixed in the same layer. A design pattern including such a figure is transferred to an imprint mold substrate by lithography using an electron beam or the like, dry etching such as reactive ion etching (RIE), or the like.

  For example, in the formation of a resist pattern using an electron beam or the like, there is a concern about the influence of the proximity effect. In developing the exposed resist, the development time depends on the size of the figure. In general, a graphic with a smaller width develops faster and the dimensional variation increases. For this reason, the figure of the design pattern cannot be drawn faithfully on the resist. As a result, the dimensional variation of the imprint mold pattern formed by the etching process occurs.

  Further, when the substrate is processed by RIE or the like using the drawn resist pattern as a mask, the etching depth and the etching processing cross-sectional shape fluctuate between a figure with a large opening width and a figure with a small opening width. The etching depth also depends on the pattern density. Furthermore, in resist drawing, if high-resolution exposure conditions are used in accordance with fine figures, drawing time for mixed large-area figures increases, and the processing capability of the drawing apparatus decreases.

In order to control the etching depth of the imprint mold, there is one using a laminated structure as a substrate (see, for example, Patent Document 1). A material that is not etched under the etching conditions for the upper layer to which the pattern is transferred is used for the lower layer. In this case, the etching depth is substantially defined by the thickness of the upper layer. However, it is not possible to suppress variations in resist pattern dimensions and etching processing cross-sectional shapes.
Japanese Patent No. 3821069

  The objective of this invention is providing the manufacturing method of the imprint mold which can reduce the fluctuation | variation of a dimension and a cross-sectional shape, and can suppress the fall of processing capability.

    According to the aspect of the present invention, (a) each of a plurality of figures included in the design pattern data is classified into a first figure whose dimension is equal to or smaller than the dimension reference value and a second figure that is larger than the dimension reference value. And (b) a step of transferring the first graphic onto the substrate using the first drawing pattern data, and (c) a second drawing pattern. There is provided a method of manufacturing an imprint mold including a step of transferring a second graphic to a substrate using data.

  ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to provide the manufacturing method of the imprint mold which can reduce the fluctuation | variation of a dimension and a cross-sectional shape, and can suppress the fall of processing capability.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  As shown in FIG. 1, the imprint mold manufacturing system according to the embodiment of the present invention includes a data generation unit 70, an input device 84, an output device 85, an external storage device 86, a process management unit 90, and a manufacturing unit 92. Etc. The data generation unit 70 includes an input unit 72, a classification unit 74, a division unit 76, a generation unit 78, an output unit 80, an internal memory 82, and the like. The external storage device 86 includes a design information file 88 and the like. The manufacturing unit 92 includes a plurality of drawing devices 94a, 94b,..., A developing device 96, an etching device 98, and the like.

  The data generation unit 70 acquires design pattern data including a plurality of figures transferred to the substrate. Each of the acquired plurality of figures is classified into a first figure whose dimension is equal to or smaller than the dimension reference value and a second figure that is larger than the dimension reference value. First and second drawing pattern data are generated from each of the classified first and second graphics.

The data generation unit 70 may be configured as a part of a central processing unit (CPU) of a normal computer system. The input unit 72, the classification unit 74, the division unit 76, the generation unit 78, and the output unit 80 may each be configured by dedicated hardware, and are substantially equivalent to software using a CPU of a normal computer system. It may have various functions.
The design information file 88 of the external storage device 86 connected to the data generation unit 70 stores imprint mold design specification information including specifications of a plurality of figures and layouts of the plurality of figures. Further, the external storage device 86 stores program instructions for each process executed by the data generation unit 70. Program instructions are read into the data generation unit 70 as necessary, and arithmetic processing is executed. Each of the external storage devices 86 may be composed of a semiconductor memory device such as a semiconductor ROM or a semiconductor RAM, an auxiliary storage device such as a magnetic disk device, a magnetic drum device, or a magnetic tape device, and is a main storage device of a CPU of a computer. You may comprise.

  The process management unit 90 manages an imprint mold manufacturing process performed by the manufacturing unit 92. The process management unit 90 stores device specifications and manufacturing conditions of each manufacturing apparatus of the manufacturing unit 92, dimension reference values and area reference values for pattern data drawing, and the like. For example, a drawing apparatus capable of drawing is designated from among the drawing apparatuses 94a, 94b,... For the pattern data transferred to the substrate, based on the dimension reference value.

  The imprint mold according to the embodiment of the present invention has a pattern region 11 on the surface of the substrate 10 as shown in FIG. In the pattern area 11, patterns such as line and space (L / S), dots, pillars, and holes are arranged. The pattern shape may be concave or convex with respect to the surface of the substrate 10. Further, the pattern pitch and aspect ratio (the value of the ratio of the groove depth to the opening width) are not limited and are arbitrary. In the embodiment of the present invention, as shown in FIGS. 3 and 4, a plurality of patterns such as a concave first pattern 12 and a second pattern 14 are arranged on the surface of the substrate 10. The dimension (width) Wb of the first pattern 12 is smaller than the dimension (width) Wa of the second pattern 14.

In the case of optical imprint lithography, as the substrate 10, for example, transparent materials such as quartz glass having a thickness of about 6 mm to 7 mm, heat-resistant glass, calcium fluoride (CaF ₂ ), and magnesium fluoride (MgF ₂ ), and these transparent materials A laminated structure of materials is used. In the case of thermal imprint lithography, silicon carbide (SiC), Si, SiC / Si, silicon oxide (SiO ₂ ) / Si, silicon nitride (Si ₃ N ₄ ) / Si, or the like is used as the substrate 10. Further, a metal substrate such as tantalum (Ta), aluminum (Al), titanium (Ti), and tungsten (W) may be used.

  The input unit 72 of the data generation unit 70 acquires imprint mold design pattern data stored in the design information file. The design pattern data includes, for example, a plurality of figures transferred to the substrate 10 corresponding to the first and second patterns 12 and 14 shown in FIG.

  The classification unit 74 classifies each of the acquired plurality of figures based on a predetermined dimension reference value. For example, the dimension reference value is set to 100 nm. As shown in FIG. 5, the first graphic 2 corresponding to the first pattern 12 having a width Wb of 100 nm or less is classified into the first graphic group. As shown in FIG. 6, the second graphic 4 corresponding to the second pattern 14 having a width Wa larger than 100 nm is classified into the second graphic group.

  The dividing unit 76 searches the figure classified into the second figure group for a target figure having a region where a part of the figure has a width equal to or smaller than the dimension reference value. If there is a target graphic, the target graphic is divided into a first divided graphic having a width equal to or smaller than the dimension reference value and a second divided graphic having a width larger than the dimension reference value. As shown in FIG. 7, the graphic 3 including the small area pattern region 3a having the width Wb equal to or smaller than the dimension reference value and the large area pattern region 3b having the width Wa larger than the dimension reference value is classified into the second graphic group. As shown in FIG. 8, the first divided figure 2a corresponding to the small area pattern region 3a is divided from the figure 3. As shown in FIG. 9, the second divided figure 4a corresponding to the large area pattern region 3b is divided from the figure 3. Each of the first and second divided figures 2a and 4a is classified into a first and a second figure group.

  The generation unit 78 generates first and second drawing pattern data for transferring from the first and second graphic groups to the substrate. The output unit 80 transmits the generated first and second drawing pattern data to the process management unit 90.

  The internal memory 82 stores design pattern data acquired by the input unit 72, graphics classified by the classification unit 74, divided graphics divided by the division unit 76, drawing pattern data generated by the generation unit 78, and the like. In addition, the internal memory 82 or the external storage device 86 of the data generation unit 70 temporarily stores data being processed in the pattern processing in the data generation unit 70.

  The input device 84 refers to devices such as a keyboard and a mouse. When an input operation is performed from the input device 84, corresponding key information is transmitted to the data generation unit 70. The output device 85 refers to a screen such as a monitor, and a cathode ray tube, a liquid crystal display (LCD), a light emitting diode (LED) panel, an electroluminescence (EL) panel, or the like can be used. The output device 85 displays the pattern processing area processed by the data generation unit 70, the layout obtained, and the like.

  The drawing devices 94a, 94b,... Of the manufacturing unit 92 acquire the drawing pattern data generated by the data generation unit 70 through the process management unit 90, and draw the pattern on the resist film on the substrate 10. As the drawing devices 94a, 94b,..., For example, a charged particle beam drawing device such as a spot electron beam drawing device or a variable shaped electron beam drawing device, an optical drawing device such as a laser beam drawing device, or an X-ray drawing device Drawing devices with different performances may be included.

  The minimum drawing line width of each of the spot electron beam drawing apparatus, the variable shaped electron beam drawing apparatus, and the laser beam drawing apparatus is about 20 nm or less to about 100 nm, about 100 nm or less to about 2500 nm, and about 300 nm or more. However, if the processing capability of the laser beam drawing apparatus is 1, the variable shaped electron beam drawing apparatus and the spot electron beam drawing apparatus are about 0.1 or less and 0.001 or less, respectively.

  As described above, if a spot electron beam drawing apparatus is used, it is possible to draw a figure having a width of about 20 nm or less, but it takes a long time to draw a large-area figure. Therefore, it is desirable to use a variable shaped electron beam drawing apparatus or a laser beam drawing apparatus for drawing a large-area figure. On the other hand, it is difficult for a variable shaped electron beam drawing apparatus or a laser beam drawing apparatus to draw a fine figure of about 100 nm or less as designed.

  In the embodiment of the present invention, a dimension value such as 300 nm, 100 nm, 20 nm, or the like is determined as the dimension reference value according to the product specification. The first drawing pattern data consisting of the first figure below the dimension reference value is the spot electron beam drawing apparatus, and the second drawing pattern data consisting of the second figure larger than the dimension reference value is the variable shaped electron beam drawing apparatus or laser beam drawing apparatus. Draw with. For example, if the dimension reference value is 100 nm, it is possible to draw a fine figure of about 100 nm or less, and to suppress a reduction in drawing processing capacity (throughput).

  Next, the imprint mold manufacturing method according to the embodiment of the present invention will be described with reference to the flowchart shown in FIG. 10 and FIGS. Here, it is assumed that the manufacturing unit 92 shown in FIG. 1 includes a drawing device 94a using a spot electron beam and a drawing device 94b using a variable shaped electron beam. The description will be made with reference to the first and second graphics 2 and 4 shown in FIGS. A description will be given using the figure 3 shown in FIG. 7 as a figure to be divided.

  (A) In step S200, the design pattern data stored in the design information file 88 is acquired by the input unit 72 of the data generation unit 70 shown in FIG. The design pattern data includes a plurality of figures transferred to the substrate.

  (B) In step S <b> 201, a dimension reference value is acquired from the process management unit 90 by the input unit 72. For example, 100 nm is used as the dimension reference value.

  (C) In step S202, the classification unit 74 shown in FIG. 1 causes each of a plurality of figures to be composed of a first figure group consisting of a first figure 2 having a dimension reference value or less and a second figure 4 being larger than the dimension reference value. It is classified into the second graphic group.

  (D) In step S203, the division unit 76 shown in FIG. 1 searches the figure classified into the second figure group to see if there is a figure 3 having a part of which has a width equal to or smaller than the dimension reference value. Is done.

  (E) If there is the figure 3, in step S204, the dividing unit 76 divides the figure 3 into a first divided figure 2a having a width equal to or smaller than the dimension reference value and a second divided figure 4a having a width larger than the dimension reference value. Is done. The first and second divided figures 2a and 4a are classified into first and second graphic groups by the classification unit 74, respectively.

  (F) In step S205, the generation unit 78 shown in FIG. 1 generates first and second drawing pattern data from each of the first and second graphic groups.

  (G) In step S206, the output unit 80 shown in FIG. 1 transmits the generated first and second drawing pattern data to the process management unit 90.

  (H) In step S207, the process management unit 90 shown in FIG. 1 transmits the first drawing pattern data to the drawing device 94a shown in FIG. 1, and the second drawing pattern data is sent to the drawing device 94b shown in FIG. Is done.

  (I) As shown in FIG. 11, a resist film 50 for electron beam is applied to the surface of the substrate 10. As the substrate 10, for example, a quartz substrate having a thickness of about 6.35 mm is used. The resist film 50 is exposed by the drawing device 94a using the first drawing pattern data.

  (N) As shown in FIG. 12, the resist film 50 is developed by the developing device 96 shown in FIG. 1, and the first resist pattern 52 corresponding to the first graphic 2 is drawn. Subsequently, the resist film 50 on which the first resist pattern 52 is formed is exposed by the drawing device 94b using the second drawing pattern data.

  (L) As shown in FIG. 13, the developing device 96 develops the resist film 50 and draws a second resist pattern 56 corresponding to the second graphic 4.

  (E) As shown in FIG. 14, the first and second patterns corresponding to the first and second resist patterns 52 and 56 by the dry etching or the like using the resist film 50 as a mask by the etching apparatus 98 shown in FIG. 12 and 14 are formed on the substrate 10. Thereafter, the resist film 50 is removed. In this way, an imprint mold is manufactured.

  In the embodiment of the present invention, the first drawing pattern data composed of the first graphic 2 having a dimension reference value or less that requires high resolution is exposed by the drawing device 94a using a spot electron beam. The second drawing pattern data composed of the second graphic larger than the dimension reference value is exposed by the drawing device 94b using a variable shaped electron beam having a high processing capability. As a result, it is possible to draw the first and second resist patterns 52 and 56 that are faithful to the design pattern data while suppressing a decrease in processing capability.

  In the above description, the second drawing pattern data is exposed after the first resist pattern 52 is developed. However, the second drawing pattern data may be exposed before the development of the first resist pattern 52.

  For example, as shown in FIG. 15, the drawing device 94a exposes the resist film 50 applied to the surface of the substrate 10 using the first drawing pattern data to form a first latent image 51a. Subsequently, as shown in FIG. 16, the drawing device 94b exposes the resist film 50 using the second drawing pattern data to form a second latent image 51b. Thereafter, as shown in FIG. 17, the resist film 50 is developed by the developing device 96 to draw the first and second resist patterns 52 and 56 corresponding to the first and second latent images 51 a and 51 b. it can.

  Further, in order to reinforce the etching resistance of the resist film 50, a hard mask may be used. For example, as shown in FIG. 18, a hard mask 40 having openings 53 and 57 corresponding to the first and second figures 2 and 4 is formed on the surface of the substrate 10 using a resist film 50. As the hard mask 40, metals such as aluminum (Al), titanium (Ti), tantalum (Ta), and chromium (Cr), metal silicides such as molybdenum silicide (MoSi), and tantalum silicide (TaSi) are used. Further, as the hard mask 40, an oxide such as metal or Si, nitride, carbide or the like may be used.

(Modification)
The manufacturing method of the imprint mold which concerns on the modification of embodiment of this invention is related with the dry etching method of a board | substrate. As described in the embodiment of the present invention, the first and second graphics 2 and 4 classified using the dimension reference values are drawn by different drawing devices 94a and 94b, thereby satisfying the design specification. The first and second resist patterns 52 and 56 having the dimensions to be formed can be formed. When dry etching such as RIE is performed using the resist pattern thus formed as a mask, the etching depth and cross-sectional shape of the pattern formed on the substrate may vary depending on the opening area of the resist pattern.

For example, as shown in FIGS. 19 and 20, first and second patterns 112 and 114 adjacent to a substrate 10 such as a Si substrate at a distance Wy are formed by RIE using sulfur hexafluoride (SF ₆ ). Here, the width Wxb of the first pattern 112 is about 1 μm or about 5 μm. The depths Dxb and Dxa of the first and second patterns 112 were measured with an atomic force microscope (AFM).

  FIG. 21 is a diagram showing fluctuations in the depths Dxb and Dxa of the first and second patterns when the width Wxa of the second pattern 114 is changed in the range of about 1 μm to about 1130 μm. The distance Wy is about 1 μm. As shown in FIG. 21, the depth Dxa of the second pattern 114 increases with the width Wxa, and becomes substantially constant at about 1 mm or more. On the other hand, the depth Dxb of the first pattern 112 tends to decrease with the width Wxa. Further, the depth Dxb of the first pattern of about 5 μm is about twice as large as that of the first pattern of width Wxb of about 1 μm.

  FIG. 22 is a diagram showing fluctuations in the depths Dxb and Dxa of the first and second patterns when the distance Wy is changed in the range of about 1 μm to about 1000 μm. The width Wxa of the second pattern 114 is fixed to about 1130 μm. As shown in FIG. 22, the depth Dxb of the first pattern 112 increases with the distance Wy, and becomes substantially constant when the distance Wy is about 100 μm or more. Further, the depth Dxb of the first pattern of about 5 μm is about twice as large as that of the first pattern of width Wxb of about 1 μm.

As shown in FIGS. 23 and 24, an L / S pattern in which openings 116 are arranged on a substrate 10 such as a quartz substrate with a line portion 118 interposed is formed by RIE using carbon tetrafluoride (CF ₄ ). did. The ratio between the line width Wl and the opening width Ws is approximately 1: 1. The depth Ds of the opening 116 was measured by AFM. Further, the inclination angle θ of the side surface of the opening 116 with respect to the surface of the line portion 118 was measured with a scanning electron microscope (SEM).

FIG. 25 is a diagram showing the variation of the depth Ds when the opening width Ws is changed when the quartz substrate is etched by RIE using CF ₄ . FIG. 25 shows that the depth Ds decreases as the opening width Ws decreases to about 400 nm or less. In addition, when the opening width Ws is about 400 nm or more, the depth Ds becomes a substantially constant value.

FIG. 26 is a diagram showing a change in the inclination angle θ when the opening width Ws is changed when the quartz substrate is etched by RIE using CF ₄ . From FIG. 26, it can be seen that the inclination angle θ increases as the opening width Ws increases, and reaches about 90 ° at about 500 nm or more.

  Thus, it can be seen that the depth of the pattern formed by etching by RIE and the inclination angle of the side surface depend on the pattern dimension and also on the distance between adjacent patterns. By adjusting the etching conditions, it is possible to suppress the dependency of the etching depth and the inclination angle on the pattern dimensions within the range of manufacturing errors.

  For example, as shown in FIG. 27, the substrate 10 is etched by RIE or the like through a first resist pattern 152 having a small opening area of about 100 nm or less and a second resist pattern 156 having a large opening area larger than about 100 nm. To do.

  When RIE is performed using optimum etching conditions for a pattern with a small opening area, as shown in FIG. 28, the first pattern 22 corresponding to the first resist pattern 152 is formed with a desired depth and cross-sectional shape. However, in the second pattern 24a corresponding to the second resist pattern 156, the exposed surface of the substrate 10 is only roughened and etching hardly proceeds.

  On the other hand, when RIE is performed using the optimum etching conditions for the pattern with a large opening area, the second pattern 24 corresponding to the second resist pattern 156 is formed with a desired depth and cross-sectional shape as shown in FIG. The However, in the first pattern 22a corresponding to the first resist pattern 152, the exposed surface of the substrate 10 is only roughened, and etching hardly proceeds. Alternatively, as shown in FIG. 30, although etching proceeds, an undercut with a width Wu may occur at the interface of the resist film 50 in the vicinity of the first resist pattern 152. In such a case, the cross-sectional shape is significantly different from the design specification, and the obtained depth Dd is also smaller than the depth Da of the second pattern 24.

  As described above, when a pattern is formed by dry etching such as RIE using the resist film 50 as a mask, etching conditions for obtaining a desired depth and cross-sectional shape vary depending on the opening area of the resist pattern. In the modification of the embodiment, as in the embodiment, a plurality of figures included in the design pattern data are classified into a first figure that is less than or equal to the dimension reference value and a second figure that is larger than the dimension reference value.

  First, a first pattern is formed on a substrate by dry etching using a first resist pattern formed by drawing a first figure on a resist film applied to the substrate. Next, a second pattern is formed on the substrate by dry etching using a second resist pattern formed by drawing a second figure on a resist film newly applied to the substrate. In the etching of each of the first and second patterns, different etching conditions can be used in accordance with the opening area of the resist pattern. Therefore, it is possible to control the etching depth and the cross-sectional shape of each of the first and second patterns within the range of manufacturing errors.

  Next, a method for manufacturing an imprint mold according to a modification of the embodiment of the present invention will be described with reference to FIGS. The manufacturing unit 92 shown in FIG. 1 includes a drawing device 94a that uses a spot electron beam and a drawing device 94b that uses a variable shaped electron beam. For example, 100 nm is used as the dimension reference value. In addition, since the first and second drawing pattern data generation methods using the first and second graphics 2 and 4 shown in FIGS. 5 and 6 are the same as those in the embodiment, redundant description is omitted. .

  (A) First, the first and second pattern data generated by the data generation unit 70 are transmitted to the drawing devices 94a and 94b by the process management unit 90, respectively.

  (B) As shown in FIG. 31, a resist film (first resist film) 50 for electron beam is applied to the surface of the substrate 10. As the substrate 10, for example, a quartz substrate having a thickness of about 6.35 mm is used. The resist film 50 is exposed by the drawing device 94a using the first drawing pattern data.

  (C) As shown in FIG. 32, the developing device 96 develops the resist film 50 and draws a first resist pattern 52 corresponding to the first graphic 2.

  (D) As shown in FIG. 33, the etching apparatus 98 forms the first pattern 12 corresponding to the first resist pattern 52 on the substrate 10 by dry etching such as RIE using the resist film 50 as a mask. In dry etching, optimum etching conditions for a pattern having an opening area of 100 nm or less, which is a dimension reference value, are used.

  (E) As shown in FIG. 34, a resist film (second resist film) 54 for electron beam is applied to the surface of the substrate 10 on which the first pattern 12 is formed. The resist film 54 is exposed by the drawing device 94b using the second drawing pattern data.

  (F) As shown in FIG. 35, the developing device 96 develops the resist film 54 and draws a second resist pattern 56 corresponding to the second graphic 4.

  (G) As shown in FIG. 36, the etching apparatus 98 forms the second pattern 14 corresponding to the second resist pattern 56 on the substrate 10 by dry etching such as RIE using the resist film 54 as a mask. In dry etching, optimum etching conditions for a pattern having an opening area larger than 100 nm, which is a dimension reference value, are used. Thereafter, the resist film 54 is removed. In this way, an imprint mold is manufactured.

  In the imprint mold manufacturing method according to the embodiment of the present invention, first and second drawing pattern data are generated from each of the first and second graphics classified based on the dimension reference value. Each of the first and second drawing pattern data is exposed by drawing devices 94a and 94b having different performances. Therefore, it is possible to draw the first and second resist patterns 52 and 56 that are faithful to the design pattern data while suppressing a reduction in processing capacity of the drawing process. The first and second patterns 12 and 14 are each formed by independent dry etching. Therefore, optimum etching conditions based on the opening areas of the first and second resist patterns 52 and 56 can be applied in each dry etching. As a result, it is possible to reduce variations in dimensions and cross-sectional shapes of the first and second patterns 12 and 14.

  The control of the etching depths of the first and second patterns 12 and 14 may be performed by time control based on the etching rate data acquired in advance. In addition, when the second figure includes a pattern having a dimension of about 5 μm or more, the etching depth can be controlled by in situ measurement using interference of ultraviolet light during the dry etching of the second pattern 14. Is possible.

  Further, in order to control the cross-sectional shape of the second pattern 14, the second graphic 4 may be further divided. For example, as shown in FIG. 37, the second figure 4 is divided into the first divided figure 4b including the outer periphery of the second figure 4 with the width We of the dimension reference value, and the second divided figure 4c inside the first divided figure 4b. Divide into When the second divided figure 4c is larger than the dimension reference value, the first divided figure 4b is classified into the first figure group together with the first figure 2 as shown in FIG. Further, as shown in FIG. 39, the second divided figure 4c is classified into the second figure group.

  The second divided figure 4 b is included in the first drawing pattern data and is formed by dry etching together with the first pattern 12. The second divided figure 4c is included in the second drawing pattern data, and is formed by dry etching separately from the second divided figure 4b. Therefore, the side surfaces of the second pattern 14 formed corresponding to the first and second divided figures 4 b and 4 c can be set to substantially the same inclination angle as that of the first pattern 12. Accordingly, it is possible to further reduce the difference in cross-sectional shape between the first and second patterns 12 and 14.

  In addition, as shown in FIG. 40, there are cases where a plurality of target figures 6a, 6b, 6c in the first figure have a width Wc and are arranged at intervals Wd that are equal to or smaller than the dimension reference value. In such a case, when the pattern density exceeds about 30%, the variation in the etching depth of the pattern formed due to the loading effect or the like becomes large.

  For example, the density reference value is set to 30%. When the target figures 6a, 6b, and 6c are arranged with a pattern density equal to or higher than the density reference value, as shown in FIGS. 41 and 42, the target figures 6a, 6b, and 6c are thirdly set so as to be lower than the density reference value. The divided figure (6a, 6c) and the fourth divided figure 6b are divided. The third divided figure (6a, 6c) is classified into the first figure group, and the fourth divided figure 6b is classified into the third figure group. Third drawing pattern data is generated from the third graphic. The third graphic is transferred to the substrate 10 using the third drawing pattern data. Here, the third graphic transfer step is performed independently of the first and second graphic transfer steps. Since the pattern densities of the third and fourth divided figures (6a, 6c) and 6b are each equal to or lower than the density reference value, fluctuations in the etching depth can be suppressed.

(Other embodiments)
Although the embodiments of the present invention have been described as described above, it should not be understood that the descriptions and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  In the embodiment of the present invention, the first and second graphics 2 and 4 are classified using the dimension reference value. However, a plurality of dimension reference values may be set and classified into three or more figures. For example, 20 nm and 300 nm are set as dimension reference values. A figure having a dimension of 20 nm or less is designated as a first figure, a figure larger than 20 nm and not more than 300 nm is designated as a second figure, and a figure larger than 300 nm is designated as a third figure. If each of the first to third figures is drawn using a spot electron beam, a variable shaped electron beam, and a laser beam, the processing capability can be further improved. Draw with

  Although omitted in the description of the embodiment of the present invention, alignment marks are provided when the first and second drawing pattern data are exposed. For example, an alignment mark can be provided on the surface of the substrate 10 outside the pattern region 11 shown in FIG. Alternatively, an alignment mark pattern may be added to the first drawing pattern data.

  As described above, the present invention naturally includes various embodiments that are not described herein. Accordingly, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

It is the schematic which shows an example of the manufacturing system of the imprint mold which concerns on embodiment of this invention. It is a plane schematic diagram showing an example of an imprint mold concerning an embodiment of the invention. It is a plane schematic diagram showing an example of a pattern of an imprint mold concerning an embodiment of the invention. It is the schematic which shows the AA cross section of the imprint mold shown in FIG. It is a figure which shows an example of the classification | category of the figure which concerns on embodiment of this invention. It is a figure which shows the other example of the classification | category of the figure which concerns on embodiment of this invention. It is a figure which shows an example of the figure used for description of the division | segmentation of the figure which concerns on embodiment of this invention. It is a figure which shows an example of the classification | category of the division figure which concerns on embodiment of this invention. It is a figure which shows the other example of the classification | category of the division | segmentation figure which concerns on embodiment of this invention. It is a flowchart which shows an example of the manufacturing method of the imprint mold which concerns on embodiment of this invention. It is sectional drawing (the 1) which shows an example of the manufacturing method of the imprint mold which concerns on embodiment of this invention. It is sectional drawing (the 2) which shows an example of the manufacturing method of the imprint mold which concerns on embodiment of this invention. It is sectional drawing (the 3) which shows an example of the manufacturing method of the imprint mold which concerns on embodiment of this invention. It is sectional drawing (the 4) which shows an example of the manufacturing method of the imprint mold which concerns on embodiment of this invention. It is sectional drawing (the 1) which shows the other example of the manufacturing method of the imprint mold which concerns on embodiment of this invention. It is sectional drawing (the 2) which shows the other example of the manufacturing method of the imprint mold which concerns on embodiment of this invention. It is sectional drawing (the 3) which shows the other example of the manufacturing method of the imprint mold which concerns on embodiment of this invention. It is sectional drawing which shows an example of the hard mask used for manufacture of the imprint mold which concerns on embodiment of this invention. It is a top view which shows an example of the pattern used for description of the modification of embodiment of this invention. It is the schematic which shows the BB cross section of the pattern shown in FIG. It is a figure which shows the relationship between a pattern width and an etching depth. It is a figure which shows the relationship between the distance between patterns, and the etching depth. It is a top view which shows an example of the L / S pattern used for description of the modification of embodiment of this invention. It is the schematic which shows CC cross section of the pattern shown in FIG. It is a figure which shows the relationship between opening width and etching depth. It is a figure which shows the relationship between opening width and an inclination angle. It is sectional drawing which shows an example of the board | substrate used for description of the etching of the modification of embodiment of this invention. It is sectional drawing which shows an example of the result of the etching of the modification of embodiment of this invention. It is sectional drawing which shows an example of the other result of the etching of the modification of embodiment of this invention. It is sectional drawing which shows the other example of the other result of the etching of the modification of embodiment of this invention. It is sectional drawing (the 1) which shows an example of the manufacturing method of the imprint mold which concerns on the modification of embodiment of this invention. It is sectional drawing (the 2) which shows an example of the manufacturing method of the imprint mold which concerns on the modification of embodiment of this invention. It is sectional drawing (the 3) which shows an example of the manufacturing method of the imprint mold which concerns on the modification of embodiment of this invention. It is sectional drawing (the 4) which shows an example of the manufacturing method of the imprint mold which concerns on the modification of embodiment of this invention. It is sectional drawing (the 5) which shows an example of the manufacturing method of the imprint mold which concerns on the modification of embodiment of this invention. It is sectional drawing (the 6) which shows an example of the manufacturing method of the imprint mold which concerns on the modification of embodiment of this invention. It is a figure which shows an example of the division | segmentation of the figure which concerns on the modification of embodiment of this invention. It is a figure which shows an example of the classification | category of the division | segmentation figure which concerns on the modification of embodiment of this invention. It is a figure which shows an example of the classification | category of the division | segmentation figure which concerns on the modification of embodiment of this invention. It is a figure which shows the other example of the division | segmentation of the figure which concerns on the modification of embodiment of this invention. It is a figure which shows the other example of the classification | category of the division figure which concerns on the modification of embodiment of this invention. It is a figure which shows the other example of the classification | category of the division figure which concerns on the modification of embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 2 ... 1st figure 4 ... 2nd figure 10 ... Board | substrate 11 ... Pattern area | region 12 ... 1st pattern 14 ... 2nd pattern 50 ... Resist film (1st resist film)
52... First resist pattern 54... Resist film (second resist film)
56. Second resist pattern

Claims (3)

Each of the plurality of figures included in the design pattern data is classified into a first figure having a dimension that is less than or equal to a dimension reference value and a second figure that is greater than the dimension reference value. Generating first and second drawing pattern data;
Preparing a substrate;
Transferring the first graphic to the substrate using the first drawing pattern data;
Transferring the second graphic to the substrate using the second drawing pattern data,
In the step of generating the first and second drawing pattern data, division into a first divided graphic including the outer periphery of the second graphic and a second divided graphic inside the first divided graphic with a width of the dimension reference value A step of classifying the first divided graphic into a first graphic and the second divided graphic into a second graphic when the dimension of the second divided graphic is larger than the dimension reference value;
Transferring the first graphic;
Drawing a first resist pattern on the first resist film applied on the substrate by using the first drawing pattern data with a first drawing apparatus, and opening the first resist pattern using the first resist pattern as a mask Removing a part of the substrate under conditions according to the area,
The step of transferring the second graphic
Drawing a second resist pattern on the second resist film applied on the substrate by using the second drawing pattern data by a second drawing device having a minimum drawing line width larger than that of the first drawing device; And a step of removing a part of the substrate under a condition corresponding to an opening area of the second resist pattern using two resist patterns as a mask.   The method of manufacturing an imprint mold according to claim 1, wherein the first resist pattern is drawn using a spot electron beam drawing apparatus. When the plurality of target figures in the first figure are arranged at intervals equal to or smaller than the dimension reference value and at a pattern density equal to or higher than the density reference value, the plurality of target figures are set to be equal to or less than the density reference value. Dividing the target graphic into a third divided graphic and a fourth divided graphic; classifying the third divided graphic into the first graphic; and classifying the fourth divided graphic into a third graphic; Generating third drawing pattern data;
The third drawing pattern producing method of the imprint mold according to claim 1 or 2 data using, characterized in that it further comprises a step of transferring the third figure to the substrate.

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