JP5095299B2 - Ethinyl group-containing bridged alicyclic compound, insulating film forming material, insulating film and method for producing the same - Google Patents

Ethinyl group-containing bridged alicyclic compound, insulating film forming material, insulating film and method for producing the same Download PDF

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JP5095299B2
JP5095299B2 JP2007208644A JP2007208644A JP5095299B2 JP 5095299 B2 JP5095299 B2 JP 5095299B2 JP 2007208644 A JP2007208644 A JP 2007208644A JP 2007208644 A JP2007208644 A JP 2007208644A JP 5095299 B2 JP5095299 B2 JP 5095299B2
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insulating film
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ethynyl
forming material
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JP2009023983A (en
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和樹 岡本
克典 舩木
真由美 鳥枝
晃 宝来
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Daicel Corp
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本発明は、半導体の製造等に用いる絶縁膜、特に耐熱性や機械的強度に優れ低い比誘電率を示す絶縁膜とその製造方法、該絶縁膜を得るために有用な重合性化合物、絶縁膜形成材料及び空孔構造を有するポリマーに関する。   The present invention relates to an insulating film for use in the production of a semiconductor, particularly an insulating film having excellent heat resistance and mechanical strength and exhibiting a low relative dielectric constant, a method for producing the same, a polymerizable compound useful for obtaining the insulating film, and an insulating film The present invention relates to a forming material and a polymer having a pore structure.

近年、回路パターンの微細化が進む半導体プロセスにおいて、層間絶縁膜の低誘電率化が求められている。層間絶縁膜の低誘電率化には空孔構造の構築が効果的であるとされており、酸化ケイ素系の層間絶縁膜では、発泡剤等を用いた空孔構造の導入が提案されている。しかし、この方法では、空孔の形成は可能なものの、空孔の結合(空孔の連続化)が避けがたいため、機械的強度、熱的安定性に難点があり、半導体の製造における配線プロセスにおいて、膜破壊が生じるなどの重大な問題を抱えていた。   2. Description of the Related Art In recent years, in a semiconductor process in which circuit patterns are becoming finer, a lower dielectric constant of an interlayer insulating film is required. It is said that the construction of a hole structure is effective for lowering the dielectric constant of an interlayer insulating film. For silicon oxide-based interlayer insulating films, introduction of a hole structure using a foaming agent or the like has been proposed. . However, although this method can form vacancies, it is difficult to avoid linking of vacancies (continuation of vacancies), so there are difficulties in mechanical strength and thermal stability. The process had serious problems such as film breakage.

本発明者らは、多官能性の架橋性モノマーの重合により、分子レベルの空孔が形成された絶縁膜によれば、低誘電率化と高い機械的強度を両立しうることを見出した(例えば、特開2004−307804号公報参照)。しかし、前記の絶縁膜では、未反応末端が多く残存するため、誘電率がばらつきやすいという問題があった。また、半導体の高集積化が進行する現状においては、より一層の低比誘電率化が求められている。   The inventors of the present invention have found that an insulating film having pores at a molecular level formed by polymerization of a polyfunctional crosslinkable monomer can achieve both low dielectric constant and high mechanical strength ( For example, refer to Japanese Patent Application Laid-Open No. 2004-307804). However, the insulating film has a problem in that the dielectric constant tends to vary because many unreacted terminals remain. Further, in the current situation where higher integration of semiconductors is progressing, there is a demand for further reduction in relative dielectric constant.

特開2004−307804号公報JP 2004-307804 A

本発明の目的は、半導体の製造に有用な高い耐熱性及び極めて低い比誘電率を有するとともに、比誘電率のばらつきの少ない空孔構造を有するポリマー及び絶縁膜とその製造方法、これらを形成しうる絶縁膜形成材料及び重合性化合物を提供することにある。   An object of the present invention is to form a polymer and an insulating film having a high heat resistance and an extremely low relative dielectric constant useful for manufacturing semiconductors, and having a pore structure with little variation in relative dielectric constant, and a method for manufacturing the same. Another object is to provide an insulating film forming material and a polymerizable compound.

本発明者らは、上記目的を達成するため鋭意検討した結果、特定構造のエチニル基含有有橋脂環化合物を重合すると、比誘電率が極めて低く且つ比誘電率のばらつきの少ない絶縁膜が効率よく得られることを見出し、本発明を完成した。   As a result of intensive studies to achieve the above object, the present inventors have found that when an ethynyl group-containing bridged alicyclic compound having a specific structure is polymerized, an insulating film having an extremely low relative permittivity and a small variation in relative permittivity is obtained. The present invention has been completed by finding that it can be obtained well.

すなわち、本発明は、下記式(1

Figure 0005095299
(式中、Zはアダマンタン−1,3,5,7−テトライル基を示し、Xは下記式(3a’)〜(3v’)
Figure 0005095299
(式中、Aは、−NH−、酸素原子又は硫黄原子を示す。sは0〜5の整数を示す)
で表される基、又はこれらが2以上結合した基から選択される基を示し、Yは炭素数1〜10のアルキル基、炭素数6〜20のアリール基、トリメチルシリル、及びトリエチルシリル基から選択される置換基を有していてもよいエチニル基、又は前記置換基を有していてもよいエチニルフェニル基を示す。Rは水素原子、又は炭素数1〜6のアルキル基、炭素数6〜14の芳香族炭化水素基から選択される炭化水素基を示す。mは1〜5の整数、nは3又は4を示す。n+k=である。分子内の複数のX、Yは、それぞれ同一であっても異なっていてもよい)
で表されるエチニル基含有有橋脂環式化合物を提供する。 That is, the present invention provides the following formula (1 )
Figure 0005095299
(In the formula, Z represents an adamantane-1,3,5,7-tetrayl group , and X represents the following formulas (3a ′) to (3v ′)).
Figure 0005095299
(In formula, A shows -NH-, an oxygen atom, or a sulfur atom. S shows the integer of 0-5.)
Or a group selected from a group in which two or more thereof are bonded , and Y is selected from an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 20 carbon atoms, trimethylsilyl, and a triethylsilyl group The ethynyl group which may have a substituent and the ethynylphenyl group which may have the said substituent is shown. R represents a hydrogen atom or a hydrocarbon group selected from an alkyl group having 1 to 6 carbon atoms and an aromatic hydrocarbon group having 6 to 14 carbon atoms . m represents an integer of 1 to 5, and n represents 3 or 4 . n + k = 4 . A plurality of X and Y in the molecule may be the same or different)
An ethynyl group-containing bridged alicyclic compound represented by the formula:

本発明は、また、前記エチニル基含有有橋脂環式化合物を含む絶縁膜形成材料を提供する。   The present invention also provides an insulating film forming material containing the ethynyl group-containing bridged alicyclic compound.

この絶縁膜形成材料は、前記エチニル基含有有橋脂環式化合物とともに、他のエチニル基含有化合物を含んでいてもよい。   This insulating film forming material may contain another ethynyl group-containing compound together with the ethynyl group-containing bridged alicyclic compound.

前記絶縁膜形成材料は、エチニル基含有有橋脂環式化合物が有機溶媒に溶解した溶液が含まれる。   The insulating film forming material includes a solution in which an ethynyl group-containing bridged alicyclic compound is dissolved in an organic solvent.

本発明は、さらに、前記絶縁膜形成材料を重合反応に付して得られる空孔構造を有するポリマーを提供する。   The present invention further provides a polymer having a pore structure obtained by subjecting the insulating film forming material to a polymerization reaction.

本発明は、さらにまた、前記空孔構造を有するポリマーからなる絶縁膜を提供する。   The present invention further provides an insulating film made of a polymer having the pore structure.

本発明は、また、前記絶縁膜形成材料を基材上に塗布した後、重合反応に付して空孔構造を有するポリマーからなる絶縁膜を形成することを特徴とする絶縁膜の製造方法を提供する。
尚、本明細書には上記発明の他に、下記式(1)

Figure 0005095299
(式中、Zは有橋脂環骨格を示し、Xは複素環又はその前駆構造を含む2価以上の有機基を示し、Yは置換基を有していてもよいエチニル基を含む基を示す。Rは水素原子又は炭化水素基を示す。mは1〜5の整数、nは2〜7の整数、kは0〜5の整数を示す。n+k=2〜7である。分子内の複数のX、Y、及び複数存在する場合のRは、それぞれ同一であっても異なっていてもよい)
で表されるエチニル基含有有橋脂環式化合物、Zにおける有橋脂環骨格に係る有橋脂環が下記式
Figure 0005095299
から選ばれる環、又はこれらが2以上結合した環である前記エチニル基含有有橋脂環式化合物、Xにおける複素環又はその前駆構造を含む2価以上の有機基が、イミダゾリル基、ベンズイミダゾリル基、オキサゾリル基、ベンズオキサゾリル基、チアゾリル基、ベンズチアゾリル基、これらの複素環式基の前駆体となる基、前記複素環式基又はその前駆体となる基が2以上結合した基、又は前記複素環式基又はその前駆体となる基の1又は2以上と芳香族炭化水素基が結合した基である前記エチニル基含有有橋脂環式化合物、Xにおける複素環又はその前駆構造を含む2価以上の有機基が下記式
Figure 0005095299
(式中、Aは、−NH−、酸素原子又は硫黄原子を示す。sは0〜5の整数を示す。式中の各環は置換基を有していてもよい)
から選ばれる基、又はこれらが2以上結合した基である前記エチニル基含有有橋脂環式化合物についても記載する。
The present invention also provides a method for producing an insulating film, characterized in that after the insulating film forming material is applied onto a substrate, an insulating film made of a polymer having a pore structure is formed by a polymerization reaction. provide.
In this specification, in addition to the above invention, the following formula (1)
Figure 0005095299
(In the formula, Z represents a bridged alicyclic skeleton, X represents a divalent or higher valent organic group including a heterocyclic ring or a precursor structure thereof, and Y represents a group including an ethynyl group which may have a substituent. R represents a hydrogen atom or a hydrocarbon group, m represents an integer of 1 to 5, n represents an integer of 2 to 7, k represents an integer of 0 to 5. n + k = 2 to 7. A plurality of X, Y, and a plurality of Rs may be the same or different)
The ethynyl group-containing bridged alicyclic compound represented by the formula:
Figure 0005095299
The ethynyl group-containing bridged alicyclic compound, which is a ring selected from the above, or a ring in which two or more of these are bonded, a divalent or higher valent organic group containing a heterocyclic ring or a precursor structure thereof in X is an imidazolyl group or a benzimidazolyl group , An oxazolyl group, a benzoxazolyl group, a thiazolyl group, a benzthiazolyl group, a group that is a precursor of these heterocyclic groups, a group in which two or more of the heterocyclic groups or groups that are precursors thereof are bonded, or The ethynyl group-containing bridged alicyclic compound, which is a group in which an aromatic hydrocarbon group is bonded to one or two or more of a heterocyclic group or a precursor thereof, 2 containing a heterocyclic ring in X or a precursor structure thereof An organic group having a valence greater than
Figure 0005095299
(In the formula, A represents —NH—, an oxygen atom or a sulfur atom. S represents an integer of 0 to 5. Each ring in the formula may have a substituent)
The ethynyl group-containing bridged alicyclic compound which is a group selected from the above or a group in which two or more of these are bonded is also described.

本発明のエチニル基含有有橋脂環化合物は、有橋脂環骨格を中心骨格とし、該有橋脂環骨格に置換基を有していてもよいエチニル基を含む基が複素環を含む2価以上の有機基を介して結合した構造を有しているので、重合により比誘電率の低い空孔構造を有するポリマー及び絶縁膜を得ることができる。また、エチニル基は未反応で残存していても誘電率を低下させない性質を有するので、絶縁膜の比誘電率のばらつきを抑制できる。また、本発明のエチニル基含有有橋脂環化合物を重合して得られる絶縁膜は、高い耐熱性と機械的強度を有する。   The ethynyl group-containing bridged alicyclic compound of the present invention has a bridged alicyclic skeleton as a central skeleton, and the group containing an ethynyl group that may have a substituent in the bridged alicyclic skeleton contains a heterocyclic ring. Since it has a structure bonded through an organic group having a valence or higher, a polymer having a pore structure with a low relative dielectric constant and an insulating film can be obtained by polymerization. Further, since the ethynyl group has a property of not lowering the dielectric constant even if it remains unreacted, variation in the relative dielectric constant of the insulating film can be suppressed. The insulating film obtained by polymerizing the ethynyl group-containing bridged alicyclic compound of the present invention has high heat resistance and mechanical strength.

本発明のエチニル基含有有橋脂環式化合物は前記式(1)で表される。式中、Zは有橋脂環骨格を示し、Xは複素環又はその前駆構造を含む2価以上の有機基を示し、Yは置換基を有していてもよいエチニル基を含む基を示す。Rは水素原子又は炭化水素基を示す。   The ethynyl group-containing bridged alicyclic compound of the present invention is represented by the formula (1). In the formula, Z represents a bridged alicyclic skeleton, X represents a divalent or higher-valent organic group containing a heterocyclic ring or a precursor structure thereof, and Y represents a group containing an ethynyl group which may have a substituent. . R represents a hydrogen atom or a hydrocarbon group.

中心骨格Zとしての有橋脂環骨格の代表的な例として、前記式(2a)〜(2j)で表される環、又はこれらが2以上(例えば2〜3個)結合した環が挙げられる。   Representative examples of the bridged alicyclic skeleton as the central skeleton Z include rings represented by the above formulas (2a) to (2j), or rings in which two or more (for example, 2 to 3) are bonded. .

前記有橋脂環骨格の好ましい例としては、アダマンタン骨格(アダマンタン−1,3,5,7−テトライル基等)、ビアダマンタン骨格、テトラフェニルアダマンタン骨格、ノルボルナン骨格、テトラメチルノルボルナン骨格、ノルボルネン骨格、テトラメチルノルボルネン骨格などが挙げられる。中心骨格部分の分子量は、例えば40〜1460、好ましくは60〜500程度である。   Preferred examples of the bridged alicyclic skeleton include an adamantane skeleton (adamantane-1,3,5,7-tetrayl group, etc.), a biadamantane skeleton, a tetraphenyladamantane skeleton, a norbornane skeleton, a tetramethylnorbornane skeleton, a norbornene skeleton, Examples include a tetramethylnorbornene skeleton. The molecular weight of the central skeleton is, for example, about 40 to 1460, preferably about 60 to 500.

Xにおける複素環又はその前駆構造を含む2価以上の有機基において、複素環としては、例えば、イミダゾール環、ベンズイミダゾール環、オキサゾール環、ベンズオキサゾール環、チアゾール環、ベンズチアゾール環などが挙げられる。これらの中でも、耐熱性の点で、ベンズイミダゾール環、ベンズオキサゾール環、ベンズチアゾール環が好ましい。   In the divalent or higher valent organic group containing the heterocyclic ring or its precursor structure in X, examples of the heterocyclic ring include an imidazole ring, a benzimidazole ring, an oxazole ring, a benzoxazole ring, a thiazole ring, and a benzthiazole ring. Among these, a benzimidazole ring, a benzoxazole ring, and a benzthiazole ring are preferable in terms of heat resistance.

Xは複素環又はその前駆構造だけで構成されていてもよく、複素環又はその前駆構造と芳香族炭素環とで構成されていてもよい。好ましいXとして、イミダゾリル基、ベンズイミダゾリル基、オキサゾリル基、ベンズオキサゾリル基、チアゾリル基、ベンズチアゾリル基、これらの複素環式基の前駆体となる基、前記複素環式基又はその前駆体となる基が2以上結合した基、又は前記複素環式基又はその前駆体となる基の1又は2以上と芳香族炭化水素基が結合した基が含まれる。Xは、必要に応じて、アルキレン基又はエーテル結合を少なくとも含む全原子数2〜20(好ましくは全原子数2〜10)の有機基を含んでいてもよい。   X may be composed only of a heterocycle or a precursor structure thereof, or may be composed of a heterocycle or a precursor structure thereof and an aromatic carbocycle. Preferred X is an imidazolyl group, a benzimidazolyl group, an oxazolyl group, a benzoxazolyl group, a thiazolyl group, a benzthiazolyl group, a group that is a precursor of these heterocyclic groups, or the heterocyclic group or a precursor thereof. A group in which two or more groups are bonded, or a group in which an aromatic hydrocarbon group is bonded to one or two or more of the heterocyclic group or a group serving as a precursor thereof is included. X may contain an organic group having 2 to 20 atoms in total (preferably 2 to 10 atoms in total) containing at least an alkylene group or an ether bond, if necessary.

Xの代表的な例として、前記式(3a)〜(3v)で表される基、又はこれらが2以上結合した基が挙げられる。なお、式(3e)、(3i)、(3j)、(3m)、(3o)、(3p)、(3s)、(3t)、(3u)、(3v)はベンズオキサゾール環の前駆構造を含む基である。式中、Aは、−NH−、酸素原子又は硫黄原子を示す。sは0〜5の整数を示す。式中の各環は置換基を有していてもよい。   Representative examples of X include groups represented by the above formulas (3a) to (3v), or groups in which two or more of these are bonded. Formulas (3e), (3i), (3j), (3m), (3o), (3p), (3s), (3t), (3u), and (3v) represent the precursor structure of the benzoxazole ring. It is a group containing. In formula, A shows -NH-, an oxygen atom, or a sulfur atom. s shows the integer of 0-5. Each ring in the formula may have a substituent.

前記式中の各環が有していてもよい置換基としては、例えば、脂肪族炭化水素基、脂環式炭化水素基、芳香族炭化水素基、又はこれらの2以上(例えば2〜4個)が酸素原子若しくは硫黄原子を介して、又は介することなく結合した基が挙げられる。前記各環が有していてもよい置換基の総炭素数は、例えば1〜50である。   Examples of the substituent that each ring in the formula may have include, for example, an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, or two or more thereof (for example, 2 to 4). ) May be bonded via an oxygen atom or a sulfur atom or not. The total carbon number of the substituent which each said ring may have is 1-50, for example.

前記脂肪族炭化水素基としては、例えば、メチル、エチル、プロピル、イソプロピル、ブチル、イソブチル、s−ブチル、t−ブチル、ペンチル、ヘキシル、デシル、ドデシル基などの炭素数1〜20(好ましくは1〜10、さらに好ましくは1〜6)程度の直鎖状又は分岐鎖状アルキル基;ビニル、アリル、1−ブテニル、3−メチル−4−ペンテニル基などの炭素数2〜20(好ましくは2〜10、さらに好ましくは2〜5)程度の直鎖状又は分岐鎖状アルケニル基;エチニル、プロピニル、1−ブチニル、2−ブチニル基などの炭素数2〜20(好ましくは2〜10、さらに好ましくは2〜5)程度の直鎖状又は分岐鎖状アルキニル基などが挙げられる。   Examples of the aliphatic hydrocarbon group include 1 to 20 carbon atoms (preferably 1) such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, pentyl, hexyl, decyl, and dodecyl groups. -10, more preferably 1-6) linear or branched alkyl group; 2-20 carbon atoms such as vinyl, allyl, 1-butenyl, 3-methyl-4-pentenyl group (preferably 2-2) 10 or more preferably 2 to 5) linear or branched alkenyl group; ethynyl, propynyl, 1-butynyl, 2-butynyl group or the like having 2 to 20 carbon atoms (preferably 2 to 10, more preferably Examples thereof include a linear or branched alkynyl group of about 2 to 5).

脂環式炭化水素基としては、例えば、シクロプロピル、シクロブチル、シクロペンチル、シクロヘキシル、シクロオクチル基などの3〜20員(好ましくは3〜15員、さらに好ましくは3〜12員)程度のシクロアルキル基、シクロプロペニル、シクロブテニル、シクロペンテニル、シクロヘキセニル基などの3〜20員(好ましくは3〜15員、さらに好ましくは3〜10員)程度のシクロアルケニル基などの単環の脂環式炭化水素基;アダマンタン環、パーヒドロインデン環、デカリン環、パーヒドロフルオレン環、パーヒドロアントラセン環、パーヒドロフェナントレン環、トリシクロデカン環、トリシクロウンデカン環、テトラシクロドデカン環、パーヒドロアセナフテン環、パーヒドロフェナレン環、ノルボルナン環、ノルボルネン環など2〜4環程度の有橋脂環などを有する有橋脂環式炭化水素基(橋かけ環炭化水素基)などが挙げられる。芳香族炭化水素基としては、フェニル、ビフェニル、ナフチル、アントラニル、フェナンスリル、ピレニル基などの炭素数6〜20(好ましくは6〜14)程度の芳香族炭化水素基が挙げられる。   Examples of the alicyclic hydrocarbon group include a cycloalkyl group having about 3 to 20 members (preferably 3 to 15 members, more preferably 3 to 12 members) such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cyclooctyl groups. , Monocyclic alicyclic hydrocarbon groups such as cycloalkenyl groups of about 3 to 20 members (preferably 3 to 15 members, more preferably 3 to 10 members) such as cyclopropenyl, cyclobutenyl, cyclopentenyl and cyclohexenyl groups Adamantane ring, perhydroindene ring, decalin ring, perhydrofluorene ring, perhydroanthracene ring, perhydrophenanthrene ring, tricyclodecane ring, tricycloundecane ring, tetracyclododecane ring, perhydroacenaphthene ring, perhydro Phenalene ring, norbornane ring, norbol Such bridged alicyclic hydrocarbon group having such bridged alicyclic about 2-4 rings such as down ring (bridged ring hydrocarbon group). Examples of the aromatic hydrocarbon group include aromatic hydrocarbon groups having about 6 to 20 carbon atoms (preferably 6 to 14) such as phenyl, biphenyl, naphthyl, anthranyl, phenanthryl, and pyrenyl groups.

脂肪族炭化水素基と脂環式炭化水素基とが結合した炭化水素基には、シクロペンチルメチル、シクロヘキシルメチル、2−シクロヘキシルエチル基などのシクロアルキル−アルキル基(例えば、C3-20シクロアルキル−C1-4アルキル基など);アダマンチルメチル、アダマンチルエチル、ノルボルニルメチル、ノルボルニルエチル基等の有橋脂環式基−アルキル基等が挙げられる。また、脂肪族炭化水素基と芳香族炭化水素基とが結合した炭化水素基には、例えば、ベンジル、2−フェニルエチル、ビフェニルメチル基等のアラルキル基(例えば、C7-18アラルキル基など)、アルキル置換アリール基(例えば、1〜4個程度のC1-4アルキル基が置換したフェニル基又はナフチル基など)などが含まれる。前記脂肪族炭化水素基、脂環式炭化水素基、芳香族炭化水素基、及びこれらの結合した基は、置換基を有していてもよい。該置換基としては反応や重合後の高分子量重合体の物性を損なわないものであれば特に限定されない。 The hydrocarbon group in which an aliphatic hydrocarbon group and an alicyclic hydrocarbon group are bonded includes a cycloalkyl-alkyl group such as cyclopentylmethyl, cyclohexylmethyl, 2-cyclohexylethyl group (for example, C 3-20 cycloalkyl- C 1-4 alkyl group, etc.); bridged alicyclic group-alkyl group such as adamantylmethyl, adamantylethyl, norbornylmethyl, norbornylethyl group and the like. The hydrocarbon group in which an aliphatic hydrocarbon group and an aromatic hydrocarbon group are bonded includes, for example, an aralkyl group such as benzyl, 2-phenylethyl, or biphenylmethyl group (for example, a C 7-18 aralkyl group). An alkyl-substituted aryl group (for example, a phenyl group or a naphthyl group substituted with about 1 to 4 C 1-4 alkyl groups) and the like. The aliphatic hydrocarbon group, alicyclic hydrocarbon group, aromatic hydrocarbon group, and a group in which these groups are bonded may have a substituent. The substituent is not particularly limited as long as it does not impair the physical properties of the high molecular weight polymer after reaction or polymerization.

Yにおける置換基を有していてもよいエチニル基を含む基において、前記置換基としては、例えば、メチル、エチル、プロピル、イソプロピル、ブチル、イソブチル基等のアルキル基(例えば、炭素数1〜10程度のアルキル基等);フェニル、ナフチル基等のアリール基(例えば、炭素数6〜20程度のアリール基等);トリメチルシリル、トリエチルシリル基等の置換シリル基(例えば、トリアルキルシリル基等)などが挙げられる。   In the group containing an ethynyl group which may have a substituent in Y, examples of the substituent include alkyl groups such as methyl, ethyl, propyl, isopropyl, butyl, and isobutyl groups (for example, having 1 to 10 carbon atoms). An alkyl group of about a degree; an aryl group such as phenyl or naphthyl group (for example, an aryl group having about 6 to 20 carbon atoms); a substituted silyl group such as trimethylsilyl or triethylsilyl group (for example, a trialkylsilyl group) Is mentioned.

好ましいYには、置換基を有していてもよいエチニル基、置換基を有していてもよいエチニルフェニル基などが含まれる。   Preferred Y includes an ethynyl group which may have a substituent, an ethynylphenyl group which may have a substituent, and the like.

Yの代表的な例として、例えば、下記式(4a)〜(4d)で表される基が挙げられる。

Figure 0005095299
(式中、R′はアルキル基、アリール基又はトリアルキルシリル基を示す) Representative examples of Y include groups represented by the following formulas (4a) to (4d).
Figure 0005095299
(In the formula, R ′ represents an alkyl group, an aryl group or a trialkylsilyl group)

R′におけるアルキル基としては、例えば、メチル、エチル、プロピル、イソプロピル、ブチル、イソブチル基等の炭素数1〜10程度のアルキル基等が挙げられる。アリール基としては、例えば、フェニル、ナフチル基等の炭素数6〜20程度のアリール基等が挙げられる。トリアルキルシリル基としては、例えば、トリメチルシリル、トリエチルシリル基等が挙げられる。   Examples of the alkyl group in R ′ include alkyl groups having about 1 to 10 carbon atoms such as methyl, ethyl, propyl, isopropyl, butyl, and isobutyl groups. Examples of the aryl group include aryl groups having about 6 to 20 carbon atoms such as phenyl and naphthyl groups. Examples of the trialkylsilyl group include trimethylsilyl and triethylsilyl groups.

前記Rにおける炭化水素基としては、例えば、脂肪族炭化水素基、脂環式炭化水素基、芳香族炭化水素基、及びこれらの結合した基などが含まれる。脂肪族炭化水素基としては、例えば、メチル、エチル、プロピル、イソプロピル、ブチル、イソブチル、s−ブチル、t−ブチル、ペンチル、ヘキシル、デシル、ドデシル基などの炭素数1〜20(好ましくは1〜10、さらに好ましくは1〜6)程度の直鎖状又は分岐鎖状アルキル基;ビニル、アリル、1−ブテニル、3−メチル−4−ペンテニル基などの炭素数2〜20(好ましくは2〜10、さらに好ましくは2〜5)程度の直鎖状又は分岐鎖状アルケニル基;エチニル、プロピニル、1−ブチニル、2−ブチニル基などの炭素数2〜20(好ましくは2〜10、さらに好ましくは2〜5)程度の直鎖状又は分岐鎖状アルキニル基などが挙げられる。   Examples of the hydrocarbon group for R include an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, an aromatic hydrocarbon group, and a group in which these are bonded. Examples of the aliphatic hydrocarbon group include 1 to 20 carbon atoms (preferably 1 to 1) such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, s-butyl, t-butyl, pentyl, hexyl, decyl, and dodecyl groups. 10 or more preferably 1 to 6) linear or branched alkyl group; 2 to 20 carbon atoms (preferably 2 to 10) such as vinyl, allyl, 1-butenyl, 3-methyl-4-pentenyl group, etc. And more preferably about 2 to 5) linear or branched alkenyl group; ethynyl, propynyl, 1-butynyl, 2-butynyl group and the like having 2 to 20 carbon atoms (preferably 2 to 10, more preferably 2). -5) about a linear or branched alkynyl group.

脂環式炭化水素基としては、例えば、シクロプロピル、シクロブチル、シクロペンチル、シクロヘキシル、シクロオクチル基などの3〜20員(好ましくは3〜15員、さらに好ましくは3〜12員)程度のシクロアルキル基、シクロプロペニル、シクロブテニル、シクロペンテニル、シクロヘキセニル基などの3〜20員(好ましくは3〜15員、さらに好ましくは3〜10員)程度のシクロアルケニル基などの単環の脂環式炭化水素基;アダマンタン環、パーヒドロインデン環、デカリン環、パーヒドロフルオレン環、パーヒドロアントラセン環、パーヒドロフェナントレン環、トリシクロデカン環、トリシクロウンデカン環、テトラシクロドデカン環、パーヒドロアセナフテン環、パーヒドロフェナレン環、ノルボルナン環、ノルボルネン環など2〜4環程度の有橋脂環などを有する有橋脂環式炭化水素基(橋かけ環炭化水素基)などが挙げられる。芳香族炭化水素基としては、フェニル、ナフチル基などの炭素数6〜20(好ましくは6〜14)程度の芳香族炭化水素基が挙げられる。   Examples of the alicyclic hydrocarbon group include a cycloalkyl group having about 3 to 20 members (preferably 3 to 15 members, more preferably 3 to 12 members) such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cyclooctyl groups. , Monocyclic alicyclic hydrocarbon groups such as cycloalkenyl groups of about 3 to 20 members (preferably 3 to 15 members, more preferably 3 to 10 members) such as cyclopropenyl, cyclobutenyl, cyclopentenyl and cyclohexenyl groups Adamantane ring, perhydroindene ring, decalin ring, perhydrofluorene ring, perhydroanthracene ring, perhydrophenanthrene ring, tricyclodecane ring, tricycloundecane ring, tetracyclododecane ring, perhydroacenaphthene ring, perhydro Phenalene ring, norbornane ring, norbol Such bridged alicyclic hydrocarbon group having such bridged alicyclic about 2-4 rings such as down ring (bridged ring hydrocarbon group). Examples of the aromatic hydrocarbon group include aromatic hydrocarbon groups having about 6 to 20 carbon atoms (preferably 6 to 14) such as phenyl and naphthyl groups.

脂肪族炭化水素基と脂環式炭化水素基とが結合した炭化水素基には、シクロペンチルメチル、シクロヘキシルメチル、2−シクロヘキシルエチル基などのシクロアルキル−アルキル基(例えば、C3-20シクロアルキル−C1-4アルキル基など)が含まれる。また、脂肪族炭化水素基と芳香族炭化水素基とが結合した炭化水素基には、アラルキル基(例えば、C7-18アラルキル基など)、アルキル置換アリール基(例えば、1〜4個程度のC1-4アルキル基が置換したフェニル基又はナフチル基など)などが含まれる。 The hydrocarbon group in which an aliphatic hydrocarbon group and an alicyclic hydrocarbon group are bonded includes a cycloalkyl-alkyl group such as cyclopentylmethyl, cyclohexylmethyl, 2-cyclohexylethyl group (for example, C 3-20 cycloalkyl- C 1-4 alkyl group and the like). The hydrocarbon group in which an aliphatic hydrocarbon group and an aromatic hydrocarbon group are bonded to each other includes an aralkyl group (for example, a C 7-18 aralkyl group) and an alkyl-substituted aryl group (for example, about 1 to about 4). A phenyl group substituted with a C 1-4 alkyl group or a naphthyl group).

前記脂肪族炭化水素基、脂環式炭化水素基、芳香族炭化水素基、及びこれらの結合した基は、置換基を有していてもよい。置換基としては反応や重合後の高分子架橋体の物性を損なわないものであれば特に限定されない。   The aliphatic hydrocarbon group, alicyclic hydrocarbon group, aromatic hydrocarbon group, and a group in which these groups are bonded may have a substituent. The substituent is not particularly limited as long as it does not impair the physical properties of the crosslinked polymer after reaction or polymerization.

式(1)中、mは1〜5の整数を示す。mは、好ましくは1又は2、さらに好ましくは1である。nは2〜7の整数を示し、好ましくは3又は4、さらに好ましくは4である。kは0〜5の整数を示す。n+k=2〜7である。分子内の複数のX、Y、及び複数存在する場合のRは、それぞれ同一であっても異なっていてもよい。   In formula (1), m represents an integer of 1 to 5. m is preferably 1 or 2, and more preferably 1. n represents an integer of 2 to 7, preferably 3 or 4, and more preferably 4. k represents an integer of 0 to 5. n + k = 2-7. A plurality of X, Y in the molecule and R in the case where a plurality exist may be the same or different.

式(1)で表される化合物は、公知化合物又は公知化合物から公知の反応を利用して誘導される誘導体を出発原料として、縮合反応、置換反応、付加反応、酸化反応、環化反応等の公知の反応を利用して合成できる。例えば、式(1)で表される化合物のうち、末端に下記式(5)

Figure 0005095299
で表される構造を有する化合物は、末端に下記式(6)
Figure 0005095299
で表される構造を有する対応する化合物を、下記式(7)
Figure 0005095299
で表される化合物と反応させることにより得ることができる。 The compound represented by the formula (1) is a known compound or derivative derived from a known compound using a known reaction as a starting material, such as condensation reaction, substitution reaction, addition reaction, oxidation reaction, cyclization reaction, etc. It can be synthesized using known reactions. For example, among the compounds represented by formula (1), the following formula (5)
Figure 0005095299
The compound having the structure represented by the following formula (6)
Figure 0005095299
A corresponding compound having a structure represented by the following formula (7)
Figure 0005095299
It can obtain by making it react with the compound represented by these.

前記式(6)で表される構造を有する化合物と式(7)で表される化合物との反応は、通常、溶媒中で行われる。溶媒としては、原料を溶解し反応を阻害しないものであればよく、例えば、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド(DMAc)、N−メチル−2−ピロリドン等のアミド類;ジメチルイミダゾリジン、ジメチルイミダゾリジノン(ジメチルイミダゾリジン−ジオン)等の環状アミノアセタール類;ジメチルスルホキシドなどのスルホキシド類;スルホン類;アセトニトリル、プロピオニトリル、ベンゾニトリルなどのニトリル類;アセトン、メチルエチルケトン、ジエチルケトン、メチルイソブチルケトン、シクロペンタノン、シクロヘキサノンなどのケトン類;ギ酸エステル、酢酸エステル、プロピオン酸エステル、安息香酸エステル、γ―ブチロラクトン、プロピレングリコールモノメチルエーテルアセテート(PGMEA)などのエステル類;ジオキサン、テトラヒロドフラン、ジエチルエーテル、エチレングリコールジエチルエーテルなどのエーテル類;ジクロロメタン、ジクロロエタン、クロロホルム、四塩化炭素、クロロベンゼンなどのハロゲン化炭化水素;ベンゼン、トルエン、キシレン、エチルベンゼン、メシチレンなどの芳香族炭化水素;シクロヘキサン、メチルシクロヘキサンなどの脂環式炭化水素;ヘキサン、ヘプタン、オクタンなどの脂肪族炭化水素等が挙げられる。これらの溶媒は単独で又は2種類以上を混合して使用できる。   The reaction between the compound having the structure represented by the formula (6) and the compound represented by the formula (7) is usually performed in a solvent. Any solvent may be used as long as it dissolves the raw materials and does not inhibit the reaction. Examples thereof include amides such as N, N-dimethylformamide, N, N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone; Cyclic aminoacetals such as imidazolidine and dimethylimidazolidinone (dimethylimidazolidine-dione); Sulfoxides such as dimethyl sulfoxide; Sulfones; Nitriles such as acetonitrile, propionitrile, benzonitrile; Acetone, Methyl ethyl ketone, Diethyl ketone , Ketones such as methyl isobutyl ketone, cyclopentanone, cyclohexanone; formate ester, acetate ester, propionate ester, benzoate ester, γ-butyrolactone, propylene glycol monomethyl ether acetate Esters such as PGMEA); ethers such as dioxane, tetrahydrofuran, diethyl ether, ethylene glycol diethyl ether; halogenated hydrocarbons such as dichloromethane, dichloroethane, chloroform, carbon tetrachloride, chlorobenzene; benzene, toluene, xylene, Examples thereof include aromatic hydrocarbons such as ethylbenzene and mesitylene; alicyclic hydrocarbons such as cyclohexane and methylcyclohexane; aliphatic hydrocarbons such as hexane, heptane and octane. These solvents can be used alone or in admixture of two or more.

なかでも、アミド類、環状アミノアセタール類、スルホン類などの非プロトン性極性溶媒が好ましく、特に、N,N−ジメチルアセトアミド(DMAc)、N−メチル−2−ピロリドン等のアミド類;ジメチルイミダゾリジン、ジメチルイミダゾリジノン(ジメチルイミダゾリジン−ジオン)等の環状アミノアセタール類などが好ましく用いられる。   Of these, aprotic polar solvents such as amides, cyclic aminoacetals, and sulfones are preferable. Particularly, amides such as N, N-dimethylacetamide (DMAc) and N-methyl-2-pyrrolidone; dimethylimidazolidine Cyclic aminoacetals such as dimethylimidazolidinone (dimethylimidazolidine-dione) are preferably used.

反応は、式(6)で表される構造を有する化合物が酸化されない限度において、酸素を含む雰囲気下で行われる。例えば、酸素を窒素、アルゴンなどの不活性ガスで希釈した混合ガスの雰囲気下で行うことができる。   The reaction is performed in an atmosphere containing oxygen as long as the compound having the structure represented by formula (6) is not oxidized. For example, it can be performed in an atmosphere of a mixed gas obtained by diluting oxygen with an inert gas such as nitrogen or argon.

反応温度は、原料の種類等によって異なるが、一般には0℃〜280℃、好ましくは−30℃〜150℃程度の範囲で適宜選択できる。反応温度は、一定でもよく、連続又は逐次的に変化させてもよい。式(6)で表される構造を有する化合物と式(7)の化合物との使用割合は広い範囲で選択でき、両者を当量[式(6)で表される構造1モルに対して、式(7)の化合物1モル]用いてもよく、何れか一方を過剰量用いてもよい。式(6)で表される構造を有する化合物の仕込量は、式(7)の化合物に対して、例えば0.1〜1000当量、好ましくは1〜800当量、さらに好ましくは10当量以上(特に10〜500当量)程度である。反応は、回分式、半回分式、連続式などの慣用の方法により行うことができる。   The reaction temperature varies depending on the type of raw material and the like, but can generally be appropriately selected within the range of 0 ° C. to 280 ° C., preferably about −30 ° C. to 150 ° C. The reaction temperature may be constant or may be changed continuously or sequentially. The use ratio of the compound having the structure represented by the formula (6) and the compound of the formula (7) can be selected within a wide range. (1 mol of the compound of (7)) may be used, or either one may be used in excess. The amount of the compound having the structure represented by the formula (6) is, for example, 0.1 to 1000 equivalents, preferably 1 to 800 equivalents, more preferably 10 equivalents or more (particularly with respect to the compound of the formula (7)). 10 to 500 equivalents). The reaction can be performed by a conventional method such as a batch system, a semi-batch system, or a continuous system.

反応には、原料の種類に応じて、触媒(塩基触媒、酸触媒等)や反応剤、トラップ剤(塩基、脱水剤等)、縮合化剤(ポリリン酸等)などを使用してもよい。   In the reaction, a catalyst (base catalyst, acid catalyst, etc.), a reactive agent, a trapping agent (base, dehydrating agent, etc.), a condensing agent (polyphosphoric acid, etc.), etc. may be used depending on the type of raw material.

式(1)で表される化合物又はその中間原料を製造する場合において、複素環の形成は以下のようにして行うことができる。例えば、ベンズイミダゾール環は、カルボキシル基、置換オキシカルボニル基、ホルミル基又はハロホルミル基を有する化合物と、3,4−ジアミノフェニル基を有する化合物とを、必要に応じて酸素の存在下で反応させることにより形成することができる。また、ベンズオキサゾール環は、3−アミノ−4−ヒドロキシフェニル基又は4−アミノ−3−ヒドロキシフェニル基を有する化合物とを、必要に応じて酸素の存在下で反応させることにより形成することができる。さらに、ベンズチアゾール環は、3−アミノ−4−メルカプトフェニル基又は4−アミノ−3−メルカプトフェニル基を有する化合物とを、必要に応じて酸素の存在下で反応させることにより形成することができる。前記置換オキシカルボニル基としては、例えば、メトキシカルボニル、エトキシカルボニル等のC1-6アルコキシ−カルボニル基等が挙げられる。 In the case of producing the compound represented by the formula (1) or an intermediate material thereof, the heterocyclic ring can be formed as follows. For example, a benzimidazole ring can react a compound having a carboxyl group, a substituted oxycarbonyl group, a formyl group or a haloformyl group with a compound having a 3,4-diaminophenyl group in the presence of oxygen as necessary. Can be formed. The benzoxazole ring can be formed by reacting a compound having a 3-amino-4-hydroxyphenyl group or a 4-amino-3-hydroxyphenyl group in the presence of oxygen as necessary. . Furthermore, the benzthiazole ring can be formed by reacting a compound having a 3-amino-4-mercaptophenyl group or a 4-amino-3-mercaptophenyl group in the presence of oxygen as necessary. . Examples of the substituted oxycarbonyl group include C 1-6 alkoxy-carbonyl groups such as methoxycarbonyl and ethoxycarbonyl.

本発明の絶縁膜形成材料は、前記エチニル基含有有橋脂環式化合物を少なくとも含んでいる。本発明の絶縁膜形成材料は、エチニル基含有有橋脂環式化合物とともに、他のエチニル基含有化合物を含んでいてもよい。他のエチニル基含有化合物としては、分子内に置換基を有していてもよいエチニル基(前記例示の置換基を有していてもよいエチニル基等)を2以上(例えば、2〜4個)有する化合物を使用できる。このような化合物として、例えば、1,3,5,7−テトラキス(4−フェニルアセチレン)アダマンタン、1,3,5−トリス(4−フェニルアセチレン)アダマンタン、1,3,5−トリス(4−フェニルアセチレン)ベンゼンなどの2以上のエチニル基(アセチレン基)を有する化合物などが挙げられる。また、他のエチニル基含有化合物として、主鎖又は側鎖に置換基を有していてもよいエチニル基を含むポリマーが挙げられる。前記エチニル基含有有橋脂環式化合物とこのようなエチニル基含有ポリマーとを含む絶縁膜形成材料においては、前記エチニル基含有有橋脂環式化合物は架橋剤として機能する。例えば、前記エチニル基含有有橋脂環式化合物とエチニル基含有ポリマーとを含む絶縁膜形成材料(薬液)を基板に塗布した後、室温から600℃まで、好ましくは400℃まで加熱すると、架橋反応が進行し、架橋構造を有する高い耐熱性と機械的強度を示す膜を得ることができる。エチニル基含有有橋脂環式化合物及び他のエチニル基含有化合物は、それぞれ、単独で又は2種以上を組み合わせて使用できる。   The insulating film forming material of the present invention contains at least the ethynyl group-containing bridged alicyclic compound. The insulating film forming material of the present invention may contain another ethynyl group-containing compound together with the ethynyl group-containing bridged alicyclic compound. As other ethynyl group-containing compounds, 2 or more (for example, 2 to 4 ethynyl groups which may have a substituent in the molecule (such as ethynyl group which may have the above-mentioned substituent)) may be contained in the molecule. ) Can be used. Examples of such compounds include 1,3,5,7-tetrakis (4-phenylacetylene) adamantane, 1,3,5-tris (4-phenylacetylene) adamantane, 1,3,5-tris (4- And compounds having two or more ethynyl groups (acetylene groups) such as phenylacetylene) benzene. Moreover, the polymer containing the ethynyl group which may have a substituent in a principal chain or a side chain is mentioned as another ethynyl group containing compound. In the insulating film forming material containing the ethynyl group-containing bridged alicyclic compound and such an ethynyl group-containing polymer, the ethynyl group-containing bridged alicyclic compound functions as a crosslinking agent. For example, after an insulating film forming material (chemical solution) containing the ethynyl group-containing bridged alicyclic compound and ethynyl group-containing polymer is applied to a substrate, it is heated from room temperature to 600 ° C., preferably 400 ° C. Thus, a film having a crosslinked structure and high heat resistance and mechanical strength can be obtained. The ethynyl group-containing bridged alicyclic compound and other ethynyl group-containing compounds can be used alone or in combination of two or more.

本発明の絶縁膜形成材料は、前記エチニル基含有有橋脂環式化合物、又は前記エチニル基含有有橋脂環式化合物と他のエチニル基含有化合物が有機溶媒に溶解した溶液として用いることができる。   The insulating film forming material of the present invention can be used as a solution in which the ethynyl group-containing bridged alicyclic compound or the ethynyl group-containing bridged alicyclic compound and another ethynyl group-containing compound are dissolved in an organic solvent. .

有機溶媒としては、例えば、N,N−ジメチルホルムアミド、N,N−ジメチルアセトアミド、N−メチル−2−ピロリドン等のアミド類;ジメチルイミダゾリジン、ジメチルイミダゾリジノン(ジメチルイミダゾリジン−ジオン)等の環状アミノアセタール類;ジメチルスルホキシドなどのスルホキシド類;スルホン類;アセトニトリル、プロピオニトリル、ベンゾニトリルなどのニトリル類;アセトン、メチルエチルケトン、ジエチルケトン、メチルイソブチルケトン、シクロペンタノン、シクロヘキサノンなどのケトン類;ギ酸エステル、酢酸エステル、プロピオン酸エステル、安息香酸エステル、乳酸エチル、γ―ブチロラクトン、プロピレングリコールモノメチルエーテルアセテート(PGMEA)などのエステル類;ジオキサン、テトラヒドロフラン、ジエチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールジエチルエーテル、プロピレングリコールモノメチルエーテル(PGME)などのエーテル類;メタノール、エタノール、プロパノール、ブタノール、エチレングリコール、プロピレングリコールなどのアルコール類;ジクロロメタン、ジクロロエタン、クロロホルム、四塩化炭素、クロロベンゼンなどのハロゲン化炭化水素;ニトロメタンなどのニトロ化合物;ベンゼン、トルエン、キシレン、エチルベンゼン、メシチレンなどの芳香族炭化水素;シクロヘキサン、メチルシクロヘキサンなどの脂環式炭化水素;ヘキサン、ヘプタン、オクタンなどの脂肪族炭化水素;これらの混合溶媒などが挙げられる。   Examples of the organic solvent include amides such as N, N-dimethylformamide, N, N-dimethylacetamide, and N-methyl-2-pyrrolidone; dimethylimidazolidine, dimethylimidazolidinone (dimethylimidazolidine-dione), and the like. Cyclic aminoacetals; Sulfoxides such as dimethyl sulfoxide; Sulfones; Nitriles such as acetonitrile, propionitrile and benzonitrile; Ketones such as acetone, methyl ethyl ketone, diethyl ketone, methyl isobutyl ketone, cyclopentanone and cyclohexanone; Formic acid Esters such as ester, acetate ester, propionate ester, benzoate ester, ethyl lactate, γ-butyrolactone, propylene glycol monomethyl ether acetate (PGMEA); Ethers such as tetrahydrofuran, diethyl ether, ethylene glycol monoethyl ether, ethylene glycol diethyl ether, propylene glycol monomethyl ether (PGME); alcohols such as methanol, ethanol, propanol, butanol, ethylene glycol, propylene glycol; dichloromethane, dichloroethane, Halogenated hydrocarbons such as chloroform, carbon tetrachloride and chlorobenzene; nitro compounds such as nitromethane; aromatic hydrocarbons such as benzene, toluene, xylene, ethylbenzene and mesitylene; alicyclic hydrocarbons such as cyclohexane and methylcyclohexane; hexane, Aliphatic hydrocarbons such as heptane and octane; and mixed solvents thereof.

本発明の絶縁膜形成材料は、必要に応じて他の成分を含んでいてもよい。このような成分として、前記エチニル基含有有橋脂環式化合物の合成に用いた原料成分などが挙げられる。また、他の添加成分として、重合や環化反応等を促進するための触媒を用いることもできる。触媒の代表的な例として、硫酸、メタンスルホン酸、p−トルエンスルホン酸等の酸触媒、塩基触媒などが挙げられる。触媒の使用量は、前記エチニル基含有有橋脂環式化合物、他のエチニル基含有化合物の総量に対して、例えば0〜10モル%、好ましくは0〜5モル%程度である。   The insulating film forming material of the present invention may contain other components as necessary. Examples of such components include the raw material components used for the synthesis of the ethynyl group-containing bridged alicyclic compound. Further, as another additive component, a catalyst for promoting polymerization, cyclization reaction, or the like can be used. Typical examples of the catalyst include acid catalysts such as sulfuric acid, methanesulfonic acid, and p-toluenesulfonic acid, and base catalysts. The usage-amount of a catalyst is 0-10 mol% with respect to the total amount of the said ethynyl group containing bridged alicyclic compound and another ethynyl group containing compound, for example, Preferably it is about 0-5 mol%.

本発明の絶縁膜形成材料には、塗布性を改善するため、溶液の粘性を高める増粘剤を添加してもよい。増粘剤の代表的な例としては、エチレングリコール、ジエチレングリコール、トリエチレングリコール、ポリエチレングリコールなどのアルキレングリコール類やポリアルキレングリコール類などが挙げられる。増粘剤の使用量は、絶縁膜形成材料全体に対して、例えば0〜20重量%、好ましくは0〜10重量%程度である。   In order to improve applicability, a thickener that increases the viscosity of the solution may be added to the insulating film forming material of the present invention. Typical examples of the thickener include alkylene glycols such as ethylene glycol, diethylene glycol, triethylene glycol, and polyethylene glycol, and polyalkylene glycols. The usage-amount of a thickener is 0-20 weight% with respect to the whole insulating film forming material, for example, Preferably it is about 0-10 weight%.

本発明の絶縁膜形成材料には、基板上に形成される絶縁被膜の基板密着性を高めるための密着促進剤を添加してもよい。密着促進剤の代表的な例としては、トリメトキシビニルシラン、ヘキサメチルジシラザン、γ-アミノプロピルトリエトキシシラン、アルミニウムモノエチルアセトアセテートジイソプロピレートなどが挙げられる。密着促進剤の使用量は、絶縁膜形成材料を構成するモノマー成分(前記エチニル基含有有橋脂環式化合物及び他のエチニル基含有化合物)の総量に対して、例えば0〜10重量%、好ましくは0〜5重量%程度である。   You may add the adhesion promoter for improving the board | substrate adhesiveness of the insulating film formed on a board | substrate to the insulating-film formation material of this invention. Typical examples of the adhesion promoter include trimethoxyvinylsilane, hexamethyldisilazane, γ-aminopropyltriethoxysilane, aluminum monoethylacetoacetate diisopropylate, and the like. The amount of the adhesion promoter used is, for example, 0 to 10% by weight, preferably with respect to the total amount of monomer components (the ethynyl group-containing bridged alicyclic compound and other ethynyl group-containing compounds) constituting the insulating film forming material. Is about 0 to 5% by weight.

モノマー成分及びその他の成分の有機溶媒への溶解は、モノマー成分等が酸化されない程度において、例えば空気雰囲気下で行ってもよいが、好ましくは窒素、アルゴンなどの不活性ガス雰囲気下で行われる。モノマー成分等を溶解させる温度は、特に限定されず、モノマー成分等の溶解性や安定性、溶媒の沸点等に応じて加熱してもよく、例えば、0〜200℃、好ましくは10〜150℃程度である。   The dissolution of the monomer component and other components in the organic solvent may be performed, for example, in an air atmosphere as long as the monomer component is not oxidized, but is preferably performed in an inert gas atmosphere such as nitrogen or argon. The temperature at which the monomer component and the like are dissolved is not particularly limited, and may be heated according to the solubility and stability of the monomer component and the boiling point of the solvent, for example, 0 to 200 ° C., preferably 10 to 150 ° C. Degree.

絶縁膜形成材料中の前記エチニル基含有有橋脂環式化合物及び他のエチニル基含有化合物の濃度(総濃度)は、モノマー成分の溶解性、塗布性、作業性等を考慮して適宜選択でき、例えば5〜70重量%、好ましくは10〜60重量%程度である。   The concentration (total concentration) of the ethynyl group-containing bridged alicyclic compound and other ethynyl group-containing compounds in the insulating film forming material can be appropriately selected in consideration of the solubility, coatability, workability, etc. of the monomer components. For example, it is about 5 to 70% by weight, preferably about 10 to 60% by weight.

本発明の空孔構造を有するポリマー及び絶縁膜は、例えば、上記の絶縁膜形成材料を塗布液として基材上に塗布した後、さらに反応に付すことにより、より具体的には、例えば加熱(焼成)等により重合や環化反応させることにより得られる。前記基材としては、例えば、シリコンウェハー、金属基板、セラミック基板などが挙げられる。塗布方法としては、特に限定されず、スピンコート法、ディップコート法、スプレー法などの慣用の方法を用いることができる。   More specifically, for example, the polymer and insulating film having a pore structure of the present invention may be heated (for example, by applying the above-described insulating film forming material as a coating liquid onto a substrate and then subjecting it to a reaction. It can be obtained by polymerization or cyclization reaction such as by baking. Examples of the base material include a silicon wafer, a metal substrate, and a ceramic substrate. The application method is not particularly limited, and conventional methods such as spin coating, dip coating, and spraying can be used.

加熱温度は、モノマー成分を高分子量重合体に転化できる温度であれば特に制限されないが、一般には25〜500℃(例えば100〜500℃)、好ましくは25〜450℃(例えば150〜450℃)程度である。加熱は一定温度で行ってもよく、段階的温度勾配を付けて行ってもよい。加熱操作は、形成される薄膜の性能に影響がない限り、例えば空気雰囲気下で行われてもよいが、好ましくは不活性ガス(窒素、アルゴンなど)雰囲気下、又は真空雰囲気下で行われる。   The heating temperature is not particularly limited as long as the monomer component can be converted into a high molecular weight polymer, but is generally 25 to 500 ° C (eg 100 to 500 ° C), preferably 25 to 450 ° C (eg 150 to 450 ° C). Degree. Heating may be performed at a constant temperature or a stepped temperature gradient. The heating operation may be performed, for example, in an air atmosphere as long as the performance of the thin film to be formed is not affected, but is preferably performed in an inert gas (nitrogen, argon, etc.) atmosphere or a vacuum atmosphere.

加熱によりモノマー成分(前記エチニル基含有有橋脂環式化合物及び他のエチニル基含有化合物)の末端部のエチニル基同士が分子間で反応し、高分子量化して対応するポリマー(高分子量重合体)が生成する。また、モノマー成分が複素環の前駆構造を有する化合物である場合には、通常モノマー成分の高分子量化とともに、環化反応等が進行して、所望の構造を有するポリマー(高分子量重合体)が生成する。モノマー成分が保護基を有する場合には、通常、保護基の脱離を伴って高分子量化や環化反応が進行する。環化反応により、それぞれの前駆構造から、イミダゾール環、ベンズイミダゾール環、オキサゾール環、ベンズオキサゾール環、チアゾール環、ベンズチアゾール環などが形成される。   By heating, the ethynyl groups at the end of the monomer component (the ethynyl group-containing bridged alicyclic compound and the other ethynyl group-containing compounds) react with each other between the molecules to increase the molecular weight, and the corresponding polymer (high molecular weight polymer) Produces. In addition, when the monomer component is a compound having a heterocyclic precursor structure, the polymer component having a desired structure (high molecular weight polymer) is usually progressed along with the increase in the molecular weight of the monomer component and the cyclization reaction or the like. Generate. When the monomer component has a protecting group, usually a high molecular weight or cyclization reaction proceeds with elimination of the protecting group. By the cyclization reaction, an imidazole ring, a benzimidazole ring, an oxazole ring, a benzoxazole ring, a thiazole ring, a benzthiazole ring, or the like is formed from each precursor structure.

本発明において、例えば、モノマー成分として4官能化合物[例えば、式(1)において、n=4、m=1である化合物]を用いた場合には、中心骨格(例えば、アダマンタン骨格)を頂点(架橋点)として4方向に架橋した構造(3つの6角形が互いに2辺を共有してなるユニット)を持ち多数の空孔を有する網目状の高分子膜を形成することができる。モノマー成分として3官能化合物[例えば、式(1)において、n=3、m=1である化合物]を用いた場合には、中心骨格(例えば、アダマンタン骨格)を頂点(架橋点)として3方向に架橋した構造(3つの6角形が互いに2頂点又は2辺を共有してなるユニット)を持ち多数の空孔を有する高架橋型高分子膜が形成される。モノマー成分として2官能化合物[例えば、式(1)において、n=2、m=1である化合物]を用いた場合には、ポリマー分子鎖中のセグメント間の排除体積効果により、1ポリマー分子が存在する領域への他の分子鎖の貫通が制限されるため、モノマー混合物から直接高分子量重合体を得る場合と比べて疎な充填構造を有する空孔率の高い高分子膜を形成することができる。   In the present invention, for example, when a tetrafunctional compound [for example, a compound in which n = 4 and m = 1 in the formula (1)] is used as the monomer component, the central skeleton (for example, adamantane skeleton) is apex ( As a crosslinking point, a network polymer film having a structure (a unit in which three hexagons share two sides) crossed in four directions can be formed. When a trifunctional compound [for example, a compound in which n = 3 and m = 1 in the formula (1)] is used as the monomer component, the central skeleton (for example, adamantane skeleton) is used as a vertex (crosslinking point) in three directions A highly cross-linked polymer film having a structure in which three hexagons are shared (units in which three hexagons share two vertices or two sides) is formed. When a bifunctional compound [for example, a compound in which n = 2 and m = 1 in the formula (1)] is used as a monomer component, one polymer molecule is reduced due to an excluded volume effect between segments in the polymer molecular chain. Since the penetration of other molecular chains into the existing region is limited, it is possible to form a polymer film with a high porosity having a sparse packing structure compared with the case of obtaining a high molecular weight polymer directly from a monomer mixture. it can.

また、モノマー成分として、4官能化合物又は3官能化合物と2官能化合物とを組み合わせて用いた場合には、隣接する架橋点(又は結節点)同士の距離(辺)が長く大きい空孔が形成され、結果として極めて低い誘電率を達成することができる。より詳細には、4官能化合物は4方向へ分岐した3次元構造を有する架橋点を、3官能化合物は3方向へ分岐した3次元構造を有する架橋点をそれぞれ形成することにより、4官能化合物及び/又は3官能化合物と2官能化合物とが結合して疎な空孔構造からなるポリマーを生成することができる。なお、4官能化合物(3官能化合物)単独では、重合時に架橋点が多く形成されるため高密度化し、また、分子の自由度が減少するため未架橋点を生じ、比誘電率を上昇させる場合がある。このため、4官能化合物と3官能化合物とを組み合わせて用いることにより、互いに立体的な障害を生じて、2官能化合物との結合による重合反応により形成される空隙が大きく、低密度の疎な空孔構造を有するポリマーとなる点で有利ある。   Further, when a tetrafunctional compound or a trifunctional compound and a bifunctional compound are used in combination as a monomer component, a large void is formed with a long distance (side) between adjacent cross-linking points (or nodal points). As a result, a very low dielectric constant can be achieved. More specifically, the tetrafunctional compound forms a crosslinking point having a three-dimensional structure branched in four directions, and the trifunctional compound forms a crosslinking point having a three-dimensional structure branched in three directions. / Or a trifunctional compound and a bifunctional compound can combine to produce a polymer having a sparse pore structure. In addition, when tetrafunctional compound (trifunctional compound) is used alone, many crosslink points are formed at the time of polymerization, so the density is increased, and the degree of molecular freedom is reduced, resulting in uncrosslinked points and increasing the dielectric constant. There is. For this reason, when a tetrafunctional compound and a trifunctional compound are used in combination, a steric hindrance occurs, and a void formed by a polymerization reaction due to a bond with the bifunctional compound is large. This is advantageous in that the polymer has a pore structure.

また、モノマー成分として互いに反応する官能基を有する2種の3又は4官能化合物を用いた場合には、モノマー成分同士の立体障害により重合反応時に密度の低下を防ぐことができるため、巨大分子レベルの空孔構造を有するポリマーを得ることができる。すなわち、モノマー成分に用いる3又は4官能化合物は、中心骨格(例えば、アダマンタン骨格)を中心とする四面体(ほぼ正四面体)であって、立体的に嵩高い構造(容積の大きい構造)を有する大きな分子である。これらをモノマー成分とする重合反応においては、2つの四面体が、極めて大きい立体障害により互いの四面体構造の空間内部への貫入を防ぎ、さらに、伸長中のオリゴマー、ポリマー等の侵入も制限される。このため、両モノマー成分が本来有する四面体構造が保持され、これらの四面体の容積に対応するサイズの空孔が規則正しく配置された密度の低い構造を有するポリマーを形成することができる。   In addition, when two kinds of tri- or tetra-functional compounds having functional groups that react with each other are used as monomer components, the density can be prevented from decreasing during the polymerization reaction due to steric hindrance between the monomer components. A polymer having a pore structure of can be obtained. That is, the tri- or tetrafunctional compound used for the monomer component is a tetrahedron (almost regular tetrahedron) centered on a central skeleton (for example, an adamantane skeleton), and has a three-dimensionally bulky structure (a structure with a large volume). It has a large molecule. In the polymerization reaction using these as monomer components, the two tetrahedrons prevent the penetration of each other's tetrahedral structure into the space due to extremely large steric hindrance, and the penetration of the growing oligomers, polymers, etc. is also restricted. The For this reason, the tetrahedral structure inherent to both monomer components is maintained, and a polymer having a low density structure in which pores having a size corresponding to the volume of these tetrahedra are regularly arranged can be formed.

このように形成されたポリマーからなる絶縁膜は内部に多数の分子レベルの空孔を均一に分散して有するため、空孔率が高く、それゆえ比誘電率が低い。また、架橋により十分な耐熱性及び機械的強度を有する上、配線からの銅の拡散が極めて少ないという利点を有する。また、分子末端部に未反応で残存しても誘電率を低下させない性質を持つエチニル基を有しているため、比誘電率(K値)のばらつきがなくなるとともに、絶縁性が向上する。   The insulating film made of the polymer thus formed has a large number of molecular-level vacancies uniformly dispersed therein, and thus has a high porosity and therefore a low dielectric constant. Moreover, it has the advantage that it has sufficient heat resistance and mechanical strength due to cross-linking and has very little copper diffusion from the wiring. In addition, since it has an ethynyl group that does not lower the dielectric constant even if it remains unreacted at the molecular end, there is no variation in relative dielectric constant (K value), and insulation is improved.

加熱により形成される絶縁膜の膜厚は、用途に応じて適宜設定できるが、一般には50nm以上(50〜2000nm程度)、好ましくは100nm以上(100〜2000nm程度)、さらに好ましくは300nm以上(300〜2000nm程度)である。膜厚が50nm未満では、リーク電流が発生するなどの電気的特性に悪影響を及ぼしたり、半導体製造工程における化学的機械研磨(CMP)による膜の平坦化が困難となるなどの問題が生じやすいため、特に層間絶縁膜用途としては適さない。   The thickness of the insulating film formed by heating can be appropriately set depending on the application, but is generally 50 nm or more (about 50 to 2000 nm), preferably 100 nm or more (about 100 to 2000 nm), more preferably 300 nm or more (300 About 2000 nm). If the film thickness is less than 50 nm, problems such as adverse effects on electrical characteristics such as the occurrence of leakage current, and difficulty in planarizing the film by chemical mechanical polishing (CMP) in the semiconductor manufacturing process are likely to occur. Particularly, it is not suitable for use as an interlayer insulating film.

本発明の絶縁膜は、低誘電率且つ高耐熱性を示すため、例えば、半導体装置等の電子材料部品における絶縁被膜として使用することができ、特に層間絶縁膜として有用である。   Since the insulating film of the present invention exhibits a low dielectric constant and high heat resistance, it can be used, for example, as an insulating film in electronic material components such as semiconductor devices, and is particularly useful as an interlayer insulating film.

以下に、実施例に基づいて本発明をより詳細に説明するが、本発明はこれらの実施例により限定されるものではない。高分子膜の膜厚はエリプソメーターを用いて測定した。高分子膜の比誘電率は膜の表面にAl電極を形成して測定した。赤外線吸収スペクトルの測定はうす膜による透過法を採用した。   Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples. The film thickness of the polymer film was measured using an ellipsometer. The relative dielectric constant of the polymer film was measured by forming an Al electrode on the surface of the film. Infrared absorption spectrum was measured using a thin film transmission method.

製造例1
(アミノ基含有アダマンタン誘導体の合成)
Production Example 1
(Synthesis of amino group-containing adamantane derivatives)

Figure 0005095299
Figure 0005095299

反応容器(3つ口フラスコ)に、上記式(B)で表される3,3’−ジアミノベンジジン77.68g(0.362mol)を入れ、N,N−ジメチルアセトアミド(DMAc)307gを加えて溶解させた後、氷浴で0℃以下に保った。この反応容器へ、上記式(A)で表されるアダマンタンテトラキスベンズアルデヒド10.1g(0.018mol)をDMAc501gに溶解させた溶液を、滴下ロートを用いて6ml/minの速度で滴下した。滴下中、反応溶液内の液温が0℃を超えないように注意した。滴下終了後、滴下ロートをDMAc105gで洗浄し、これも反応容器内に滴下した。反応液に、テフロン(登録商標)チューブを用いて酸素濃度5モル%の酸素窒素混合ガスを導入しながら、反応容器をオイルバスにより加熱して液温を90℃に保ち、9時間反応させた。反応終了後、反応液を、別の容器中の水9.13kgへ滴下し、沈殿と上澄みからなるスラリーを、滴下終了後から約1時間撹拌した。撹拌中、反応液は、アミンの酸化を防止するため窒素をバブリングさせた。生成した沈殿物を濾別し、反応容器に再度移し、水1.83kgを加えて窒素雰囲気下、加熱還流を30分施して熱水洗浄を施した。温度が下がらないうちに沈殿物を濾別した後、得られた濾過物を真空乾燥機で乾燥させた。
乾燥終了後、得られた沈殿を還流管を備えた反応容器へ移し、テトラヒドロフラン(THF)1.83kgを加え、窒素雰囲気下で加熱還流することによりTHF洗浄を施した。再度固形分を濾別し、真空乾燥機で乾燥した生成物のNMRスペクトル、赤外線吸収スペクトルを測定したところ、図1に示されるNMRスペクトルデータ及び図2に示される赤外線吸収スペクトルデータにより、上記式(C)で表されるアミノ基含有アダマンタン誘導体が形成されていることを確認した。アミノ基含有アダマンタン誘導体の収量は24.5g、収率は90%であった。
[NMRスペクトルデータ]
1H−NMR(DMSO−d6) δ(ppm):2.32(12H<−CH2−>),4.60(16H<−NH2>),6.62−6.97(12H<芳香環プロトン>), 7.53−7.78(12H<芳香環プロトン>),7.87(8H),8.24(8H) 12.85(4H)
[赤外線吸収スペクトルデータ(cm-1)]
3419(N−H<伸縮振動>),2933(−CH2−のC−H<伸縮振動>),1623(−C=N−<伸縮振動>),1420−1520(芳香環<面内振動>),1280(芳香族−NH2<伸縮振動>)
In a reaction vessel (three-necked flask), 77.68 g (0.362 mol) of 3,3′-diaminobenzidine represented by the above formula (B) was added, and 307 g of N, N-dimethylacetamide (DMAc) was added. After dissolution, it was kept below 0 ° C. in an ice bath. A solution prepared by dissolving 10.1 g (0.018 mol) of adamantanetetrakisbenzaldehyde represented by the above formula (A) in 501 g of DMAc was dropped into this reaction vessel at a rate of 6 ml / min using a dropping funnel. During dropping, care was taken that the liquid temperature in the reaction solution did not exceed 0 ° C. After completion of the dropping, the dropping funnel was washed with 105 g of DMAc, and this was also dropped into the reaction vessel. The reaction vessel was heated by an oil bath while introducing a mixed gas of oxygen and nitrogen having an oxygen concentration of 5 mol% using a Teflon (registered trademark) tube, and the reaction temperature was kept at 90 ° C. for 9 hours. . After completion of the reaction, the reaction solution was added dropwise to 9.13 kg of water in another container, and a slurry consisting of a precipitate and a supernatant was stirred for about 1 hour after the completion of the addition. During the stirring, the reaction solution was bubbled with nitrogen to prevent amine oxidation. The produced precipitate was separated by filtration, transferred again to the reaction vessel, 1.83 kg of water was added, and the mixture was heated and refluxed for 30 minutes in a nitrogen atmosphere and washed with hot water. After the temperature was not lowered, the precipitate was filtered off, and the obtained filtrate was dried with a vacuum dryer.
After completion of drying, the obtained precipitate was transferred to a reaction vessel equipped with a reflux tube, tetrahydrofuran (THF) 1.83 kg was added, and the mixture was heated under reflux in a nitrogen atmosphere, and washed with THF. The solid content was again filtered, and the NMR spectrum and infrared absorption spectrum of the product dried by a vacuum dryer were measured. The NMR spectrum data shown in FIG. 1 and the infrared absorption spectrum data shown in FIG. It was confirmed that an amino group-containing adamantane derivative represented by (C) was formed. The yield of the amino group-containing adamantane derivative was 24.5 g, and the yield was 90%.
[NMR spectral data]
1 H-NMR (DMSO-d6) δ (ppm): 2.32 (12H <—CH 2 —>), 4.60 (16H <—NH 2 >), 6.62-6.97 (12H <fragrance) Ring proton>), 7.53-7.78 (12H <aromatic ring proton>), 7.87 (8H), 8.24 (8H) 12.85 (4H)
[Infrared absorption spectrum data (cm −1 )]
3419 (N—H <stretching vibration>), 2933 (—CH 2 —C—H <stretching vibration>), 1623 (—C═N— <stretching vibration>), 1420-1520 (aromatic ring <in-plane vibration) >), 1280 (aromatic-NH 2 <stretching vibration>)

実施例1
(エチニル基含有アダマンタン誘導体の合成)
Example 1
(Synthesis of ethynyl group-containing adamantane derivatives)

Figure 0005095299
Figure 0005095299

反応容器(3つ口フラスコ)に、上記式(D)で表される4−エチニルベンズアルデヒド2.08gをN,N−ジメチルアセトアミド(DMAc)20gに溶解させた溶液を入れ、これに、室温で、上記式(C)で表されるアミノ基含有アダマンタン誘導体2.65gをDMAc25gに溶解させた溶液を、滴下ロートを用いて滴下した。滴下終了後、滴下ロートをDMAc10gで洗浄し、これも反応容器内に滴下した。反応液に、テフロン(登録商標)チューブを用いて酸素濃度5モル%の酸素窒素混合ガスを導入しながら、反応容器をオイルバスにより加熱して液温を80℃に保ち、7時間反応させた。反応終了後、反応液を、別の容器中の水800gへ滴下し、沈殿と上澄みからなるスラリーを、滴下終了後から約1時間撹拌した。生成した沈殿物を濾別し、反応容器に再度移し、メタノール400gを加え、1時間撹拌した。沈殿物を濾別した後、得られた濾過物を真空乾燥機で乾燥させた。乾燥終了後、得られた沈殿をDMAc50gに溶解させ、メタノール400gに滴下した。沈殿物を濾別した後、真空乾燥機で乾燥させた。生成物のNMRスペクトル、赤外線吸収スペクトルを測定し、上記式(E)で表されるエチニル基含有アダマンタン誘導体が形成されていることを確認した。エチニル基含有アダマンタン誘導体の収量は3.09g、収率は87%であった。
[NMRスペクトルデータ]
1H−NMR(DMSO−d6) δ(ppm):2.32(12H<アダマンタン −CH2−>),4.38(4H<エチニル C−H>),7.54−8.26(6H<芳香環 C−H>),13.05(4H<イミダゾール N−H)
[赤外線吸収スペクトルデータ(cm-1)]
3422(N−H<伸縮振動>),2930(−CH2−のC−H<伸縮振動>),2220(エチニル基の<伸縮振動>,1620(−C=N−<伸縮振動>),1420−1520(芳香環<面内振動>),1280(芳香族−N−H<伸縮振動>),809(C−H<面外変角振動>
A solution in which 2.08 g of 4-ethynylbenzaldehyde represented by the above formula (D) is dissolved in 20 g of N, N-dimethylacetamide (DMAc) is placed in a reaction vessel (three-necked flask). Then, a solution prepared by dissolving 2.65 g of an amino group-containing adamantane derivative represented by the above formula (C) in 25 g of DMAc was dropped using a dropping funnel. After completion of dropping, the dropping funnel was washed with 10 g of DMAc, and this was also dropped into the reaction vessel. The reaction vessel was heated with an oil bath while maintaining the liquid temperature at 80 ° C. while introducing a mixed gas of oxygen / nitrogen having an oxygen concentration of 5 mol% using a Teflon (registered trademark) tube, and the reaction was continued for 7 hours. . After completion of the reaction, the reaction solution was added dropwise to 800 g of water in another container, and a slurry consisting of a precipitate and a supernatant was stirred for about 1 hour after the completion of the addition. The produced precipitate was separated by filtration, transferred again to the reaction vessel, added with 400 g of methanol, and stirred for 1 hour. After the precipitate was filtered off, the obtained filtrate was dried with a vacuum dryer. After completion of drying, the resulting precipitate was dissolved in DMAc 50 g and added dropwise to methanol 400 g. The precipitate was filtered off and dried with a vacuum dryer. The NMR spectrum and infrared absorption spectrum of the product were measured, and it was confirmed that the ethynyl group-containing adamantane derivative represented by the above formula (E) was formed. The yield of the ethynyl group-containing adamantane derivative was 3.09 g, and the yield was 87%.
[NMR spectral data]
1 H-NMR (DMSO-d6) δ (ppm): 2.32 (12H <adamantane-CH 2- >), 4.38 (4H <ethynyl C—H>), 7.54-8.26 (6H <Aromatic ring CH>), 13.05 (4H <imidazole NH)
[Infrared absorption spectrum data (cm −1 )]
3422 (N—H <stretching vibration>), 2930 (—CH 2 —CH—stretching vibration>), 2220 (ethynyl group <stretching vibration>, 1620 (—C═N— <stretching vibration>)), 1420-1520 (aromatic ring <in-plane vibration>), 1280 (aromatic-N-H <stretching vibration>), 809 (C-H <out-of-plane variable vibration>

(薬液の調製)
3方コックを備えた30mLフラスコに撹拌子を入れ、容器内に窒素を導入しながら、上記で得られたエチニル基含有アダマンタン誘導体800mg、およびDMAcと1,3−ジメチル−2−イミダゾリジノン(DMI)の混合液(重量比1:1)を入れ、30℃で1時間撹拌し、エチニル基含有アダマンタン誘導体の10重量%溶液とした。溶解後、室温に戻し、0.2μm及び0.1μmのテフロン(登録商標)フィルターで濾過し、薬液(絶縁膜形成材料)とした。
(Preparation of drug solution)
A stirrer was placed in a 30 mL flask equipped with a three-way cock, and while introducing nitrogen into the container, 800 mg of the ethynyl group-containing adamantane derivative obtained above and DMAc and 1,3-dimethyl-2-imidazolidinone ( DMI) mixture (weight ratio 1: 1) was added and stirred at 30 ° C. for 1 hour to obtain a 10 wt% solution of an ethynyl group-containing adamantane derivative. After dissolution, the temperature was returned to room temperature and filtered through 0.2 μm and 0.1 μm Teflon (registered trademark) filters to obtain a chemical solution (insulating film forming material).

(絶縁膜の形成)
上記で調製した薬液を、シリコンウェハー上に2〜3mL滴下し、回転数を1000〜3000rpmで調整し、スピン塗布した。続いて、窒素雰囲気下、石英製チャンバー内で、温度を室温から400℃に上げ、加熱焼成することで、膜を得た。得られた膜の膜厚は267nmであり、比誘電率は3.0であった。
[赤外線吸収スペクトルデータ(cm-1)]
3422(N−H<伸縮振動>),2930(−CH2−のC−H<伸縮振動>),1620(−C=N−<伸縮振動>),1420−1520(芳香環<面内振動>),1280(芳香族−N−H<伸縮振動>),806(C−H<面外変角振動>
(Formation of insulating film)
2 to 3 mL of the chemical solution prepared above was dropped onto a silicon wafer, the rotation speed was adjusted at 1000 to 3000 rpm, and spin coating was performed. Subsequently, the film was obtained by raising the temperature from room temperature to 400 ° C. in a quartz chamber under a nitrogen atmosphere and baking it. The obtained film had a thickness of 267 nm and a relative dielectric constant of 3.0.
[Infrared absorption spectrum data (cm −1 )]
3422 (N—H <stretching vibration>), 2930 (—CH 2 —C—H <stretching vibration>), 1620 (—C═N— <stretching vibration>), 1420-1520 (aromatic ring <in-plane vibration) >), 1280 (aromatic-N-H <stretching vibration>), 806 (C-H <out-of-plane variable vibration>

実施例2
(エチニル基含有アダマンタン誘導体の合成)
Example 2
(Synthesis of ethynyl group-containing adamantane derivatives)

Figure 0005095299
Figure 0005095299

1000mLの4つ口フラスコに、上記式(H)で表される4−エチニル−1,2−ジアミノベンゼン9.6g(72.0mmol)を入れ、N,N−ジメチルアセトアミド(DMAc)50gを加えて溶解させた後、テフロン(登録商標)チューブを用いて、溶液に空気を吹き込みながら25℃に保った。この混合液に、上記式(A)で表されるアダマンタンテトラキスベンズアルデヒド5.0g(9mmol)をDMAc100gに溶解させた溶液を、滴下ロートを用いて1.5時間かけて滴下した。滴下終了後、25℃で1時間撹拌し、次いで反応液を80℃まで昇温し、撹拌しながら24時間反応させた。反応終了後、25℃まで冷却し、純水600gを滴下し、沈殿と上澄みからなるスラリーを、滴下終了後から約1時間撹拌した。生成した沈殿物を濾別し、反応容器に再度移し、メタノール600gを加えて1時間撹拌した。沈殿物を濾別した後、得られた濾過物を真空乾燥機で乾燥させた。乾燥終了後、得られた沈殿をDMAc150gに溶解させ、そこにメタノール600gを滴下した。沈殿物を濾別した後、得られた濾過物を真空乾燥機で乾燥させた。生成物の1H−NMRスペクトルを測定し(図3参照)、上記式(I)で表されるエチニル基含有アダマンタン誘導体が形成されていることを確認した。エチニル基含有アダマンタン誘導体の収量は5.4g、収率は60%であった。
[NMRスペクトルデータ]
1H−NMR(DMSO−d6) δ(ppm):2.1(12H),4.0−4.1(4H),7.2−8.2(28H),13.1(4H)
To a 1000 mL four-necked flask, 9.6 g (72.0 mmol) of 4-ethynyl-1,2-diaminobenzene represented by the above formula (H) was added, and 50 g of N, N-dimethylacetamide (DMAc) was added. Then, using a Teflon (registered trademark) tube, the solution was kept at 25 ° C. while air was blown into the solution. A solution prepared by dissolving 5.0 g (9 mmol) of adamantanetetrakisbenzaldehyde represented by the above formula (A) in 100 g of DMAc was dropped into this mixed solution over 1.5 hours using a dropping funnel. After completion of dropping, the mixture was stirred at 25 ° C. for 1 hour, and then the reaction solution was heated to 80 ° C. and reacted for 24 hours with stirring. After completion of the reaction, the mixture was cooled to 25 ° C., 600 g of pure water was added dropwise, and a slurry consisting of a precipitate and a supernatant was stirred for about 1 hour after the completion of the addition. The produced precipitate was separated by filtration, transferred again to the reaction vessel, added with 600 g of methanol, and stirred for 1 hour. After the precipitate was filtered off, the obtained filtrate was dried with a vacuum dryer. After completion of drying, the resulting precipitate was dissolved in 150 g of DMAc, and 600 g of methanol was added dropwise thereto. After the precipitate was filtered off, the obtained filtrate was dried with a vacuum dryer. The 1 H-NMR spectrum of the product was measured (see FIG. 3), and it was confirmed that an ethynyl group-containing adamantane derivative represented by the above formula (I) was formed. The yield of the ethynyl group-containing adamantane derivative was 5.4 g, and the yield was 60%.
[NMR spectral data]
1 H-NMR (DMSO-d6) δ (ppm): 2.1 (12H), 4.0-4.1 (4H), 7.2-8.2 (28H), 13.1 (4H)

(薬液の調製)
上記で得られた式(I)で表されるエチニル基含有アダマンタン誘導体をDMAcと1,3−ジメチル−2−イミダゾリジノン(DMI)の混合液(重量比1:1)に溶解させ、エチニル基含有アダマンタン誘導体の10重量%溶液を調製した。
(Preparation of drug solution)
The ethynyl group-containing adamantane derivative represented by the formula (I) obtained above is dissolved in a mixed solution (weight ratio 1: 1) of DMAc and 1,3-dimethyl-2-imidazolidinone (DMI) to obtain ethynyl. A 10 wt% solution of the group-containing adamantane derivative was prepared.

(絶縁膜の形成)
上記で調製した薬液(絶縁膜形成材料)を、スピンコータを用いてシリコンウェハー上に塗布した。塗布ウェハーを電気炉中、窒素雰囲気下、350℃で1時間加熱することにより、架橋反応を進行させた。こうして得られた薄膜(膜厚:300nm)の電気特性を調べたところ、比誘電率は3.1であった。また、薄膜を空気中に放置しても、薄膜の吸湿による電流値の上昇は見られなかった。
(Formation of insulating film)
The chemical solution (insulating film forming material) prepared above was applied onto a silicon wafer using a spin coater. The coated wafer was heated in an electric furnace in a nitrogen atmosphere at 350 ° C. for 1 hour to advance the crosslinking reaction. When the electrical characteristics of the thin film thus obtained (film thickness: 300 nm) were examined, the relative dielectric constant was 3.1. Even when the thin film was left in the air, no increase in current value due to moisture absorption of the thin film was observed.

比較例1
(薬液の調製)
3方コックを備えた30mLフラスコに撹拌子を入れ、容器内に窒素を導入しながら、下記式(F)で表されるカルボン酸化合物255mg、下記式(G)で表されるアミン化合物550mg、およびDMAcとDMIの混合液(重量比1:1)を入れ、30℃で1時間撹拌し、前記2つの化合物の10重量%(合計濃度)溶液とした。溶解後、室温に戻し、0.2μm及び0.1μmのテフロン(登録商標)フィルターで濾過し、薬液(絶縁膜形成材料)とした。
Comparative Example 1
(Preparation of drug solution)
While introducing a stirring bar into a 30 mL flask equipped with a three-way cock and introducing nitrogen into the container, 255 mg of a carboxylic acid compound represented by the following formula (F), 550 mg of an amine compound represented by the following formula (G), A mixture of DMAc and DMI (weight ratio 1: 1) was added and stirred at 30 ° C. for 1 hour to obtain a 10 wt% (total concentration) solution of the two compounds. After dissolution, the temperature was returned to room temperature and filtered through 0.2 μm and 0.1 μm Teflon (registered trademark) filters to obtain a chemical solution (insulating film forming material).

Figure 0005095299
Figure 0005095299

(絶縁膜の形成)
上記で調製した薬液を、シリコンウェハー上に2〜3mL滴下し、回転数を1000〜3000rpmで調整し、スピン塗布した。続いて、窒素雰囲気下、石英製チャンバー内で、温度を室温から400℃に上げ、加熱焼成することで、膜を得た。得られた膜の膜厚は260nmであり、比誘電率は3.5であった。
[赤外線吸収スペクトルデータ(cm-1)]
3419(N−H<伸縮振動>),2933(−CH2−のC−H<伸縮振動>),1626(−C=N−<伸縮振動>),1420−1520(芳香環<面内振動>),1282(芳香族−N−H<伸縮振動>),806(C−H<面外変角振動>
(Formation of insulating film)
2 to 3 mL of the chemical solution prepared above was dropped onto a silicon wafer, the rotation speed was adjusted at 1000 to 3000 rpm, and spin coating was performed. Subsequently, the film was obtained by raising the temperature from room temperature to 400 ° C. in a quartz chamber under a nitrogen atmosphere and baking it. The obtained film had a thickness of 260 nm and a relative dielectric constant of 3.5.
[Infrared absorption spectrum data (cm −1 )]
3419 (N—H <stretching vibration>), 2933 (—CH 2 —C—H <stretching vibration>), 1626 (—C═N— <stretching vibration>), 1420-1520 (aromatic ring <in-plane vibration) >), 1282 (aromatic-N-H <stretching vibration>), 806 (C-H <out-of-plane angular vibration>

評価試験
実施例1、実施例2及び比較例1で得られた絶縁膜につき、周波数1kHz〜1MHzで、プローブ法により比誘電率を測定した。比較例1で作製した膜の比誘電率が3.5であるのに対し、実施例1及び実施例2で作製した膜(エチニル型)の比誘電率はそれぞれ3.0、3.1であった。実施例では、極性の高い未反応末端がないため低い比誘電率の膜が得られ、低極性のエチニル基の低誘電率化効果が確認された。
Evaluation Test About the insulating films obtained in Example 1, Example 2 and Comparative Example 1, the relative dielectric constant was measured by a probe method at a frequency of 1 kHz to 1 MHz. The relative dielectric constant of the film produced in Comparative Example 1 is 3.5, whereas the dielectric constants of the films produced in Example 1 and Example 2 (ethynyl type) are 3.0 and 3.1, respectively. there were. In Examples, since there was no unreacted terminal having high polarity, a film having a low relative dielectric constant was obtained, and the effect of reducing the dielectric constant of a low polarity ethynyl group was confirmed.

製造例1で得られたアミノ基含有アダマンタン誘導体のNMRスペクトルである。2 is an NMR spectrum of an amino group-containing adamantane derivative obtained in Production Example 1. 製造例1で得られたアミノ基含有アダマンタン誘導体の赤外線吸収スペクトルである。2 is an infrared absorption spectrum of an amino group-containing adamantane derivative obtained in Production Example 1. 実施例2で得られたエチニル基含有アダマンタン誘導体のNMRスペクトルである。2 is an NMR spectrum of the ethynyl group-containing adamantane derivative obtained in Example 2.

Claims (7)

下記式(1
Figure 0005095299
(式中、Zはアダマンタン−1,3,5,7−テトライル基を示し、Xは下記式(3a’)〜(3v’)
Figure 0005095299
(式中、Aは、−NH−、酸素原子又は硫黄原子を示す。sは0〜5の整数を示す)
で表される基、又はこれらが2以上結合した基から選択される基を示し、Yは炭素数1〜10のアルキル基、炭素数6〜20のアリール基、トリメチルシリル、及びトリエチルシリル基から選択される置換基を有していてもよいエチニル基、又は前記置換基を有していてもよいエチニルフェニル基を示す。Rは水素原子、又は炭素数1〜6のアルキル基、炭素数6〜14の芳香族炭化水素基から選択される炭化水素基を示す。mは1〜5の整数、nは3又は4を示す。n+k=である。分子内の複数のX、Yは、それぞれ同一であっても異なっていてもよい)
で表されるエチニル基含有有橋脂環式化合物。
The following formula (1 ' )
Figure 0005095299
(In the formula, Z represents an adamantane-1,3,5,7-tetrayl group , and X represents the following formulas (3a ′) to (3v ′)).
Figure 0005095299
(In formula, A shows -NH-, an oxygen atom, or a sulfur atom. S shows the integer of 0-5.)
Or a group selected from a group in which two or more thereof are bonded , and Y is selected from an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 20 carbon atoms, trimethylsilyl, and a triethylsilyl group The ethynyl group which may have a substituent and the ethynylphenyl group which may have the said substituent is shown. R represents a hydrogen atom or a hydrocarbon group selected from an alkyl group having 1 to 6 carbon atoms and an aromatic hydrocarbon group having 6 to 14 carbon atoms . m represents an integer of 1 to 5, and n represents 3 or 4 . n + k = 4 . A plurality of X and Y in the molecule may be the same or different)
An ethynyl group-containing bridged alicyclic compound represented by:
請求項1に記載のエチニル基含有有橋脂環式化合物を含む絶縁膜形成材料。 An insulating film forming material comprising the ethynyl group-containing bridged alicyclic compound according to claim 1 . 請求項1に記載のエチニル基含有有橋脂環式化合物とともに、他のエチニル基含有化合物を含む請求項記載の絶縁膜形成材料。 Insulating film-forming material according to claim 2 together with an ethynyl group-containing bridged alicyclic compounds described, other ethynyl group-containing compound in claim 1. エチニル基含有有橋脂環式化合物が有機溶媒に溶解した溶液である請求項又は記載の絶縁膜形成材料。 Insulating film-forming material according to claim 2 or 3, wherein ethynyl group-containing bridged alicyclic compound is a solution in an organic solvent. 請求項の何れかの項に記載の絶縁膜形成材料を重合反応に付して得られる空孔構造を有するポリマー。 A polymer having a pore structure obtained by subjecting the insulating film forming material according to any one of claims 2 to 4 to a polymerization reaction. 請求項記載の空孔構造を有するポリマーからなる絶縁膜。 An insulating film comprising a polymer having a pore structure according to claim 5 . 請求項記載の絶縁膜形成材料を基材上に塗布した後、重合反応に付して空孔構造を有するポリマーからなる絶縁膜を形成することを特徴とする絶縁膜の製造方法。 A method for producing an insulating film, comprising: applying an insulating film forming material according to claim 4 on a substrate; and subjecting the material to a polymerization reaction to form an insulating film made of a polymer having a pore structure.
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