JP5083281B2 - Rotation sensor and rotation sensor device - Google Patents

Description

  The present invention relates to a rotation sensor.

A rotation sensor using a plurality of magnetoresistive elements is known (see Patent Documents 1 and 2). Patent Document 1 discloses a technique in which two magnetoresistive element bridges are arranged symmetrically with respect to the magnetic center of a bias magnetic field. In Patent Document 2, two magnetoresistive elements are arranged in parallel to a gear that is a detection object, and the rotational direction of the gear is caused by a rising edge of a signal (pulse signal) having a phase difference output from the two magnetoresistive elements. A technique for detecting the above is disclosed.
JP 2001-153683 A Japanese Patent Laid-Open No. 10-332725

  In recent years, there has been an increasing demand for miniaturization and high accuracy of sensors. In particular, strict requirements such as downsizing, 360 ° detection, 0.1% FS and the like are increasing with the progress of X-by Wire in the rotation sensor.

  The present invention has been made under such a background, and an object thereof is to provide a rotation sensor excellent in miniaturization.

  In order to solve the above-described problems, in the invention described in claim 1, a vertical Hall element that is formed in a semiconductor substrate and detects a magnetic field parallel to the surface of the semiconductor substrate, and the vertical Hall element are formed. A magnetoresistive element formed on the semiconductor substrate, the resistance value of which varies with the strength of a magnetic field parallel to the surface of the semiconductor substrate, and obtained by the output signal of the vertical Hall element and the magnetoresistive element The gist is that the rotation of the detection object is detected using the signal.

  According to the first aspect of the present invention, a rotation sensor excellent in miniaturization can be provided by using a vertical Hall element that is smaller than a magnetoresistive element.

  As described in claim 2, in the rotation sensor according to claim 1, the magnetoresistive element is preferably made of a NiFe thin film. According to a third aspect of the present invention, in the rotation sensor according to the first aspect, the magnetoresistive element may be made of a NiCo thin film.

  According to a fourth aspect of the present invention, in the rotation sensor according to any one of the first to third aspects of the present invention, the magnetoresistive element includes a first and a second phase difference in the resistance value change accompanying the rotation of the detected object. As a means for detecting the rotation of the detected object using the output signal of the vertical Hall element and the signal obtained by the magnetoresistive element, the second magnetoresistive element is provided by the first magnetoresistive element. Arctan calculation means for performing an arctan calculation on the signal to be obtained and the signal obtained by the second magnetoresistive element, a pulsing means for pulsing the output signal of the vertical Hall element, and an arctan calculation by the arctan calculation means And the signal obtained by pulsing the output signal of the vertical Hall element by the pulsing means to produce a linear output at an angle of 0 to 360 °. A synthesizing unit that, when provided, it is possible to obtain a linear output at an angle of 0 to 360 °.

  As described in claim 5, in the rotation sensor according to any one of claims 1 to 4, when the vertical Hall element is overlaid on the semiconductor substrate under the magnetoresistive element, It can be made smaller.

  The rotation sensor according to any one of claims 1 to 5, wherein the vertical Hall element is a second conductivity type well region formed in a first conductivity type semiconductor substrate. A first conductivity type well region shallower than the second conductivity type well region is formed so as to divide the second conductivity type well region, and in the surface layer portion of the second conductivity type well region, A second conductivity type impurity diffusion region for contact that forms a current supply pair is formed across a well region of the first conductivity type, and a second conductivity type impurity diffusion region for contact that forms a voltage output pair is formed If formed, a cost-effective configuration can be obtained by using a well region.

(A) is a top view of the rotation sensor in 1st Embodiment, (b) is sectional drawing in the AA of (a). The top view of a sensor chip. The top view of a vertical Hall element. Sectional drawing of the vertical Hall element in the AA line of FIG. The electrical block diagram of a rotation sensor. The wave form diagram of a rotation sensor. The top view of the sensor chip for a comparison. Sectional drawing of the sensor chip of another example. The circuit diagram which shows the structure of the magnetoresistive element of another example. The top view of the rotation sensor in 2nd Embodiment. The circuit block diagram of the rotation sensor in 2nd Embodiment. The equivalent circuit diagram of a vertical Hall element. The top view of the rotation sensor for a comparison. The circuit diagram of the magnetoresistive element for a comparison. (A), (b), (c) is a top view of the sensor chip of another example. (A) is a top view of the vertical Hall element of another example, (b) is a longitudinal cross-sectional view in the AA line of (a). (A) is a top view of the vertical Hall element of another example, (b) is a longitudinal cross-sectional view in the AA line of (a).

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 shows an overall view of the rotation sensor of the present embodiment. FIG. 1A is a plan view of the rotation sensor, and FIG. 1B is a cross-sectional view taken along line AA in FIG.

  As shown in FIG. 1, a magnet rotor 1 is used as an object to be detected. The magnet rotor 1 has a rotor body 2, and the rotor body 2 has a bottomed cylindrical shape. An S-pole permanent magnet 3 and an N-pole permanent magnet 4 are arranged to face each other on the inner surface of the bottomed cylindrical rotor body 2. A sensor chip 5 is disposed apart from the permanent magnets 3 and 4 at a portion where the S-pole permanent magnet 3 and the N-pole permanent magnet 4 face each other inside the bottomed cylindrical rotor body 2. A magnetic field is applied to the sensor chip 5 by the permanent magnets 3 and 4.

  FIG. 2 shows details of the sensor chip 5.

  In FIG. 2, a vertical Hall element 11 is formed in a semiconductor substrate 10. In addition, magnetoresistive elements 12 and 13 are formed on the semiconductor substrate 10. The magnetoresistive elements 12 and 13 are made of a NiFe thin film. Thus, the two magnetoresistive elements 12 and 13 and the vertical Hall element 11 are arranged side by side on the same substrate (same chip).

  In the vertical Hall element 11, the magnetosensitive surface (the direction of the Hall plate surface where the Hall voltage is maximized or the direction in which the Hall plate is arranged perpendicular to the incident direction of the magnetic field) is the longitudinal direction of the magnetoresistive element 12. (The direction in which the resistance value is the lowest for NiFe with respect to the magnetic field) is arranged. The magnetic field at this time is a magnetic field parallel to the surface of the sensor chip 5. As described above, the vertical Hall element 11 can detect a magnetic field parallel to the surface of the semiconductor substrate 10. The resistance values of the magnetoresistive elements 12 and 13 vary depending on the strength of the magnetic field parallel to the surface of the semiconductor substrate 10. Then, a signal having a level corresponding to the resistance value is output from each of the magnetoresistive elements 12 and 13. The magnetoresistive elements 12 and 13 have a band shape, and the extending direction of the second magnetoresistive element 13 is inclined by 45 ° with respect to the first magnetoresistive element 12. Thereby, one magnetoresistive element 13 has a phase difference of 45 ° with respect to the change in resistance value accompanying the rotation of the magnet rotor 1 with respect to the other magnetoresistive element 12.

  The adjacent magnetoresistive elements 12 and 13 are preferably arranged as close as possible even within the sensor chip 5. In addition, it is possible to integrate peripheral circuits (circuits that can perform calculations and corrections) in the same chip.

  3 and 4 show a specific configuration of the vertical Hall element 11 formed on the sensor chip 5.

  3 is a plan view schematically showing the planar structure of the Hall element 11, and FIG. 4 is a cross-sectional view taken along the line AA in FIG.

  As shown in FIG. 4, an N-type silicon layer 32 is formed on a P-type silicon substrate 31 by an epitaxial growth method. The P-type silicon substrate 31 and the N-type silicon layer 32 constitute a semiconductor substrate. Further, in the N-type silicon layer 32, the P-type impurity diffusion region 33 for element isolation has a square structure as shown in FIG. 3 as a planar structure and a P-type silicon as shown in FIG. 4 as a longitudinal sectional structure. It is formed so as to reach the substrate 31. A region surrounded by the P-type impurity diffusion region 33 in the N-type silicon layer 32 is a Hall element formation region. An N type buried layer 34 is formed in the Hall element formation region.

N ⁺ contact regions 35, 36, 37, 38, 39 are formed on the surface layer portion of the N-type silicon layer 32 in the Hall element formation region. These contact regions 35, 36, 37, 38, and 39 are electrically connected to terminals S, G1, G2, V1, and V2, respectively, via wiring (not shown). Contact regions 36 and 37 each form a pair with contact region 35 to form a current supply pair. The contact regions 38 and 39 constitute a voltage output pair.

  As shown in FIG. 4, the P-type impurity diffusion regions 40 and 41 in the N-type silicon layer 32 divide the Hall element formation region into three regions 42, 43 and 44 as shown in FIG. In addition, as shown in FIG. 4, the vertical cross-sectional structure is formed so as to reach the N-type buried layer 34. In the region 43, the contact regions 35, 38, and 39 are arranged on a straight line. The contact region 37 in the region 42, the contact region 35 in the region 43, and the contact region 36 in the region 44 are arranged on a straight line. Here, the straight line where the contact regions 35, 38 and 39 are located and the straight line where the contact regions 37, 35 and 36 are located are orthogonal to each other.

  In the region 43, the region sandwiched between the contact regions 38 and 39 becomes the magnetic detection unit (hole plate) HP, and a Hall voltage signal corresponding to the magnetic field applied thereto is generated.

  When a constant drive current i is supplied from the terminal S to the terminal G1 and from the terminal S to the terminal G2, the current i is directed downward from the contact region 35 formed on the substrate surface, and the magnetic detection unit HP and embedded The layer 34 further proceeds in the lateral direction in the buried layer 34 and flows upward from the lower position of the contact regions 36 and 37 to the contact regions 36 and 37, respectively. At this time, since a current i including a component perpendicular to the substrate surface (chip surface) flows through the magnetic detection unit HP, a magnetic field including a component parallel to the substrate surface (chip surface) in a state where this driving current is applied. When (for example, the magnetic field indicated by the arrow B in FIGS. 3 and 4) is applied to the magnetic detection unit HP, a Hall voltage Vh corresponding to the magnetic field is generated between the terminal V1 and the terminal V2 due to the Hall effect, By detecting the generated Hall voltage signal through the terminals V1 and V2, a magnetic field component (magnetic field component parallel to the surface of the substrate) to be detected is obtained.

  Next, the electrical configuration of the rotation sensor will be described with reference to FIG.

  As shown in FIG. 5, an arctan calculator 50, a pulsing circuit 51, and a combiner 52 are provided as peripheral circuits for the vertical Hall element 11 and the magnetoresistive elements 12 and 13. In the arctan calculator 50, arctan calculation is performed on signals SG2 and SG3 (level signals corresponding to resistance values) obtained by the magnetoresistive elements 12 and 13. A pulse circuit 51 is connected to the vertical Hall element 11. In the pulsing circuit 51, the output signal SG1 of the vertical Hall element 11 is converted into a pulsed signal. The arctan calculator 50 and the pulsing circuit 51 are connected to the synthesizer 52. In the synthesizer 52, the output signal of the arctan computing unit 50 and the output signal of the pulsing circuit 51 are synthesized. The output signal of the synthesizer 52 is a 360 ° linear signal.

  Next, the operation of the rotation sensor will be described.

  FIG. 6 is a waveform diagram for explaining the processing content for obtaining a linear output from the signals SG2 and SG3 obtained by the magnetoresistive elements 12 and 13 and the output signal SG1 of the Hall element 11.

  As shown in FIG. 6, the signals SG2 and SG3 obtained by the two magnetoresistive elements 12 and 13 become sin and cos curves as the resistance value changes with respect to the angle. That is, one output signal SG2 and the other output signal SG3 have a 45 ° phase difference.

  Further, the resistance values of the magnetoresistive elements 12 and 13 cannot be distinguished from the N pole and S pole of the permanent magnets 3 and 4 (the resistance value changes depending on the strength of the magnetic field). Therefore, when the magnets 3 and 4 to which the magnetic field is applied are rotated in accordance with the rotation of the magnet rotor 1 in FIG. 1, the sin and cos curves are rotated twice during the rotation of 0 to 360 ° as shown in FIG. Is output in the cycle.

  On the other hand, the Hall element 11 is an element capable of discriminating between the N pole and the S pole of the permanent magnets 3 and 4. Therefore, the output signal SG1 of the Hall element 11 is output at a cycle of one rotation with respect to the rotation of 0 to 360 °.

  Signals SG2 and SG3 obtained by the magnetoresistive elements 12 and 13 are subjected to arctan calculation in the arctan calculator 50 of FIG. As a result, as shown in FIG. 6, a signal is obtained in which the outputs are connected and the level changes linearly at a cycle of 180 °.

  Further, the output signal SG1 of the Hall element 11 is converted into a pulse signal by the pulsing circuit 51 of FIG. As a result, as shown in FIG. 6, an output in which the levels of H (high) and L (low) change in a cycle of 180 ° is obtained.

  In the synthesizer 52 of FIG. 5, the signal after the arctan calculation for the signals SG2 and SG3 obtained by the magnetoresistive elements 12 and 13 and the signal after the pulse output for the output signal SG1 of the Hall element 11 are combined, Connected together. Thereby, as shown in FIG. 6, the linear output of 0-360 degrees is obtained. That is, signals SG2 and SG3 obtained by the magnetoresistive element when the output signal SG1 of the Hall element 11 is positive, and signals SG2 and SG3 obtained by the magnetoresistive element when the output signal SG1 of the Hall element 11 is negative. Since they can be distinguished, the obtained outputs are further combined and connected to obtain a linear output of 0 to 360 °.

  As described above, when the Hall element 11 and the magnetoresistive elements 12 and 13 are compared with the sensitivity of the magnetic field, the magnetoresistive elements 12 and 13 are larger, so that the signal obtained by the magnetoresistive elements 12 and 13 is a linear output signal. As a result, a highly accurate sensor can be configured. In addition, since the permanent magnet can be used even when the strength (magnitude of the magnetic field) is small, the cost of the permanent magnet can be reduced. On the other hand, regarding the element size, the dimension of the magnetoresistive element is about 1 mm, the vertical and horizontal dimensions of the Hall element are about 100 μm, the element size is as small as about 1/10, and the Hall element 11 is used as an element for obtaining a pulse output. . As a result, the chip area can be reduced and the size can be reduced. In this way, a rotation sensor excellent in miniaturization and high accuracy can be provided.

  explain in detail.

  In the case shown in FIG. 7 in order to detect the 360 ° range, the vertical Hall elements 11a and 11b are laid out on the substrate so as to have a 90 ° phase difference, and the obtained two signals are subjected to arctan calculation. Thus, a sensor capable of obtaining a linear 360 ° output can be formed on one chip. However, since the sensitivity of the Hall elements 11a and 11b is small in this method, the obtained signal component is small. Then, the accuracy of the sensor deteriorates due to the influence of noise and the like. On the other hand, in this embodiment, the sensitivity can be increased by using the magnetoresistive element, the obtained signal component can be increased, and deterioration of the accuracy of the sensor due to noise or the like can be avoided.

  In order to strengthen this signal component, there is a method using a magnet with a strong magnetic field. However, using a magnet with a strong magnetic field increases the cost of the magnet. On the other hand, in this embodiment, a signal component can be enlarged by using a magnetoresistive element, and it is not necessary to use a magnet with a strong magnetic field.

  In addition, since the Hall element is generally a horizontal Hall element, the magnetosensitive surface is in a direction perpendicular to the chip surface (to detect rotation with respect to a magnetic field perpendicular to the chip surface). Used). Therefore, since the direction in which the magnetic field is detected is shifted by 90 ° from the magnetoresistive element, a desired output cannot be obtained even if they are arranged on the same chip. On the other hand, in the present embodiment, the detection direction of the magnetic field can be matched by using the vertical Hall element.

  According to the above embodiment, the following effects can be obtained.

  (1) As a configuration of the rotation sensor, a vertical Hall element 11 that is built in the semiconductor substrate 10 and detects a magnetic field parallel to the surface of the semiconductor substrate 10, and a semiconductor substrate 10 in which the vertical Hall element 11 is built Magnetoresistive elements 12 and 13 that are formed and have resistance values that change depending on the strength of the magnetic field parallel to the surface of the semiconductor substrate 10, and are obtained by the output signal SG 1 of the vertical Hall element 11 and the magnetoresistive elements 12 and 13. The rotation (rotation position) of the magnet rotor 1 as the detection object is detected using the signals SG2 and SG3. Therefore, a magnetic field from one direction can be simultaneously detected by each element, and a rotation sensor excellent in miniaturization can be provided by using a vertical Hall element that is smaller than a magnetoresistive element. it can.

  (2) Conventionally, since the magnetoresistive element is an element that determines only the strength of the magnetic field and cannot determine the N pole and the S pole, it has a feature that it is output at a cycle of 180 ° with respect to rotation. When the output obtained by the magnetoresistive element arranged so as to have a phase difference of 45 ° was converted into a linear output by performing an arctan calculation, the angle could be detected only within the range of 0 to 180 ° at the maximum. On the other hand, in the present embodiment, the magnetoresistive element includes the first and second magnetoresistive elements 12 and 13 having a phase difference in the resistance value change accompanying the rotation of the magnet rotor 1. As means for detecting the rotation of the magnet rotor 1 as the detected object using the output signal SG1 and the signals SG2 and SG3 obtained from the magnetoresistive elements 12 and 13, the signal SG2 obtained by the first magnetoresistive element 12 and the second The arctan computing unit 50 serving as an arctan computing means for performing an arctan computation on the signal SG3 obtained by the second magnetoresistive element 13, and a pulse circuit 51 serving as a pulsing means for pulsing the output signal SG1 of the vertical Hall element 11 And the signal obtained by performing the arctan calculation by the arctan calculator 50, and the vertical ho It comprises a combiner 52 as synthesizing means for obtaining a linear output an output signal SG1 in the angle of the pulsed signal synthesis to the 0 to 360 ° of the device 11, the. Therefore, a linear output can be obtained at an angle of 0 to 360 ° with a simple configuration.

  (3) Since the magnetoresistive elements 12 and 13 are made of a NiFe thin film, a weak magnetic field can be detected.

  The material of the chip 5 (substrate 10) may be a compound semiconductor (GaAs, InAs, InSb) other than silicon.

  In addition, since the Hall element 11 is configured as a diffusion layer in the substrate, and the magnetoresistive elements 12 and 13 are thin films and can be configured on the substrate, as shown in FIG. The hall elements 11 may be stacked. In FIG. 8, reference numeral 60 denotes an insulating film such as a silicon oxide film for insulating and separating the silicon layer 32 and the magnetoresistive element 61. As described above, when the vertical Hall element 11 is placed under the magnetoresistive element 61 in the semiconductor substrate 10, the size can be further reduced.

  Further, if the number of pulse outputs of the Hall element 11 (number of pulses from the pulsing circuit 51 in FIG. 5) is counted, multi-rotation (360 ° or more) can be detected.

Moreover, you may comprise the part of the magnetoresistive elements 12 and 13 with a gauge. That is, instead of reading the magnetoresistance value, as shown in FIG. 9, the magnetoresistive elements 12 and 13 (resistors R1 and R2 in FIG. 9) are connected in series and the midpoint potential is taken out. Good.
(Second Embodiment)
Next, the second embodiment will be described focusing on the differences from the first embodiment.

  In FIG. 10, the top view of the rotation sensor in this embodiment is shown.

  In FIG. 10, a chip 72 is disposed in the vicinity of the outer peripheral side of a gear 70 as a detection object, and a bias magnet (permanent magnet) 71 is further disposed on the outer peripheral side thereof. In the chip 72, a vertical Hall element 75 is disposed at the center in the left-right direction, and magnetoresistive elements 73 and 74 are disposed on both sides thereof. The vertical Hall element 75 has the structure shown in FIGS. 3 and 4 and is disposed so as to have a phase difference with respect to the magnetoresistive elements 73 and 74. In this way, the two magnetoresistive elements 73 and 74 and the vertical Hall element 75 are arranged on the chip 72 (on the same substrate). That is, the vertical Hall element 75 is formed in the semiconductor substrate (chip 72), detects a magnetic field parallel to the surface of the semiconductor substrate (chip 72), and magnetoresistive elements 73 and 73 are formed on the semiconductor substrate (chip 72). 74 is formed, and the resistance value changes depending on the strength of the magnetic field parallel to the surface of the semiconductor substrate (chip 72).

  FIG. 11 shows the connection state of the two magnetoresistive elements 73 and 74. In FIG. 11, the magnetoresistive element 73 has a full bridge circuit and the magnetoresistive element 74 also has a full bridge circuit. That is, as the configuration of the magnetoresistive element 73, four resistors R11, R12, R13, R14 are connected in series between the power supply voltage Vin and the ground (GND), and the potential (intermediate) between the resistors R12, R13 in this series circuit. Potential) is the output potential Vout1. Similarly, as the configuration of the magnetoresistive element 74, four resistors R21, R22, R23, and R24 are connected in series between the power supply voltage Vin and the ground (GND), and the potential between the resistors R22 and R23 in this series circuit ( The intermediate potential is the output potential Vout2.

  An equivalent circuit of the vertical Hall element 75 shown in FIGS. 3 and 4 is shown in FIG. In FIG. 12, the Hall element can be approximated as a resistance bridge. That is, the two resistors R31 and R32 are connected in series, and the two resistors R33 and R34 are connected in series, and the difference between the intermediate potentials in the two series circuits is the Hall voltage (output potential) Vh.

  The rotational position of the gear 70 is detected from signals obtained by the magnetoresistive elements 73 and 74. Further, the forward / reverse rotation direction of the gear 70 is detected by the output signal of the vertical Hall element 75 and the signal obtained by any one of the magnetoresistive elements 73 and 74. That is, using the phase difference between the vertical Hall element 75 and the magnetoresistive elements 73 and 74, the difference in the rise of the pulse waveform between the signal obtained by the magnetoresistive elements 73 and 74 and the output signal of the vertical Hall element 75 is obtained. Is used to detect the forward and reverse rotation directions of the gear 70.

  Specifically, the signal after binarization of the output signal of the vertical Hall element 75 is referred to as an A phase signal, and the signal after binarization of the output signal of the magnetoresistive element 73 (or the magnetoresistive element 74) is referred to as a B phase signal. In this case, the level of the B phase signal at the rising edge of the A phase signal is determined. If the level of the B phase signal at the rising edge of the A phase signal is H level, it is determined that the rotation is normal, and if the level of the B phase signal at the rising edge of the A phase signal is L level, it is determined that the rotation is reverse. To do.

  In this way, the vertical Hall element 75 is used as an element for detecting the rotational direction. As a result, the chip size can be reduced. Specifically, when the chip 110 in FIG. 13 and the chip 72 in FIG. 10 are compared, the size in the horizontal direction can be made smaller than the dimension L1 in FIG. <L2).

  Hereinafter, the case of FIGS. 13 and 14 and this embodiment will be compared and described in detail.

  As shown in FIG. 13, the chip 110 is disposed apart from the gear 100, and a bias magnet (permanent magnet) 120 is disposed on the back side of the chip 110, and the magnetoresistive elements 111, 112, 113 are arranged on the chip 110. They are juxtaposed in the left-right direction. A central magnetoresistive element 113 is arranged so as to have a phase difference with respect to the left and right magnetoresistive elements 111 and 112. Further, as a connection at each of the magnetoresistive elements 111, 112, and 113, a bridge circuit is assembled as shown in FIG. Then, the rotational position of the gear 100 is detected by the magnetoresistive elements 111 and 112 arranged on both sides of the chip 110. Further, the forward and reverse rotation directions of the gear 100 are detected by using the magnetoresistive element 113 arranged at the center of the chip 110. At this time, using the phase difference, it is possible to detect the forward and reverse rotation directions using the difference in the rise of the pulse waveform between the central magnetoresistive element 113 and the magnetoresistive elements 111 and 112 on both sides. However, when the magnetoresistive elements 111, 112, and 113 form a bridge, the detection element becomes larger (the chip size becomes larger) than the Hall element, and the cost increases.

  On the other hand, in this embodiment shown in FIG. 10, the chip size can be reduced by using the vertical Hall element 75 as the element for detecting the rotation direction. That is, the chip size can be reduced by replacing the magnetoresistive element 113 for detecting the rotation direction in FIG. 13 with the vertical Hall element 75.

  Instead of FIG. 10, as shown in FIG. 15A, it is possible to integrate the peripheral circuit 76 in an empty space or the like. In this case, the cost of the entire sensor system is also reduced. Conversely, the position detecting magnetoresistive elements 111 and 112 in FIG. 13 are replaced with vertical Hall elements 77 and 78 as shown in FIG. 15B, and only the rotational direction is detected by the magnetoresistive element 79. It is also possible. This also makes it possible to reduce the chip size.

  In addition, the vertical Hall element can be used for position detection because a bridge can be configured with one element (with one Hall plate) as shown in FIG. In this case, as shown in FIG. 15C, the sensor can be configured by using one vertical Hall element 80 in addition to the magnetoresistive element 81. Even if it does in this way, a magnetic field can be pinpointed more correctly and a chip size can be made small.

  In addition to the NiFe thin film, the magnetoresistive element may be a NiCo thin film.

  Moreover, as a structure of a vertical Hall element, it is good also as a structure shown in FIG. 16 or FIG. 17 instead of FIG.

In FIG. 16, an N well region 91 is formed on a P type silicon substrate 90, and a P well region 92 is formed in a square ring shape so as to surround the N well region 91. A P well region 93 is formed in the N well region 91 so as to divide the N well region 91 into two. P well regions 92 and 93 are shallower than N well region 91. N ⁺ regions 94, 95, and 96 are formed in a straight line in one surface of the two-divided N-well region 91, and in the other region of the two-divided N-well region 91 in the surface layer. N ⁺ regions 97 are formed. N ⁺ regions 94 to 97 are shallower than P well regions 92 and 93. N ⁺ regions 94 and 97 are contact regions constituting a current supply pair, and N ⁺ regions 95 and 96 are contact regions constituting a voltage output pair.

In FIG. 17, in addition to the configuration of FIG. 16, a P well region 98 is further formed in the N well region 91, whereby the N well region 91 is divided into three parts. The N ⁺ region 99 in a surface layer portion in addition to the area (the third divided area) in the N-well region 91 is formed, it is used as a contact region constituting the current supply to-the N ⁺ region 99.

  16 and 17 are produced by a CMOS process and are not a bipolar process, and therefore are more cost-effective than a vertical Hall element produced by a bipolar process.

As described above, the vertical Hall element is shallower than the well region 91 in the N well region 91 as the second conductivity type well region formed in the P type silicon substrate 90 as the first conductivity type semiconductor substrate. A P well region 93 (98) as a well region of one conductivity type is formed so as to divide the well region 91, and a contact constituting a current supply pair sandwiching the well region 93 (98) in the surface layer portion of the well region 91 N ⁺ regions 94 and 97 (99) as second conductivity type impurity diffusion regions for use, and N ⁺ regions 95 as second conductivity type impurity diffusion regions for contacts constituting a voltage output pair, 96 is formed. Thus, a cost-effective configuration can be obtained by using the well region.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor substrate, 11 ... Vertical Hall element, 12 ... Magnetoresistive element, 13 ... Magnetoresistive element, 50 ... Arctan calculator, 51 ... Pulse circuit, 52 ... Synthesizer, 72 ... Sensor chip, 73 ... Magnetoresistive Element, 74 ... Magnetoresistive element, 75 ... Vertical Hall element, 77 ... Vertical Hall element, 78 ... Vertical Hall element, 79 ... Magnetoresistive element, 80 ... Vertical Hall element, 81 ... Magnetoresistive element, 90 ... P-type silicon substrate, 91 ... N well region, 92 ... P well region, 93 ... P well region, 94 to 97 ... N ⁺ region, 98 ... P well region, 99 ... N ⁺ region.

Claims (10)

Built in a semiconductor substrate, wherein the vertical Hall element for detecting a magnetic field parallel to the semiconductor substrate surface, formed in the vertical Hall element elaborate make the semiconductor substrate, parallel to the surface of the semiconductor substrate And a magnetoresistive element whose resistance value changes depending on the strength of the magnetic field, and the rotation of the detected object is detected using the output signal of the vertical Hall element and the signal obtained by the magnetoresistive element. In the sensor, the vertical Hall element and the magnetoresistive element detect a magnetic field parallel to the surface of the semiconductor substrate.   The rotation sensor according to claim 1, wherein the magnetoresistive element is made of a NiFe thin film.   The rotation sensor according to claim 1, wherein the magnetoresistive element is made of a NiCo thin film. The magnetoresistive element, the result from the first and second magnetoresistive element having a phase difference in the change in resistance caused by the rotation of the detection object obtained output signal of the vertical Hall element and by said magnetoresistive element As a means for detecting the rotation of the detected object using a signal, an arctan calculation means for performing an arctan calculation on the signal obtained by the first magnetoresistive element and the signal obtained by the second magnetoresistive element; Pulsed means for pulsing the output signal of the vertical Hall element, a signal obtained by calculating arctan by the arctan calculating means, and the output signal of the vertical Hall element by the pulsing means pulsed A synthesis means for synthesizing signals to obtain a linear output at an angle of 0 to 360 °, according to any one of claims 1 to 3. Rotation sensor.   5. The rotation sensor according to claim 1, wherein the vertical Hall element is disposed on the semiconductor substrate so as to overlap the magnetoresistive element. 6. The vertical Hall element, the second conductivity type the first conductivity type well region is the second conductive shallow than the well region of the second conductivity type in the well region of which is formed in the semiconductor substrate of the first conductivity type A second conductivity type impurity for contact that forms a current supply pair with the well region of the first conductivity type sandwiched between the well regions of the first conductivity type in the surface layer portion of the well region of the second conductivity type 6. The rotation sensor according to claim 1, wherein a diffusion region is formed and an impurity diffusion region of a second conductivity type for contact that constitutes a voltage output pair is formed. 7.   The rotation sensor according to any one of claims 1 to 6, wherein two magnetoresistive elements and two vertical Hall elements are formed on the semiconductor substrate.   The magnetoresistive element is composed of a first magnetoresistive element and a second magnetoresistive element, and the extending direction of the second magnetoresistive element is inclined by 45 ° with respect to the first magnetoresistive element. The rotation sensor according to any one of claims 1 to 7, wherein the rotation sensor is arranged.   The rotation sensor according to claim 1, wherein a peripheral circuit is formed on the semiconductor substrate. The magnet rotor as the detected body has a rotor body forming a bottomed cylindrical shape, with being placed opposite and the S-pole permanent magnet and the N pole permanent magnet on the inner surface of the rotor body, according to any one of claims 1 to 9, characterized in that the portion and the S-pole permanent magnets inside the rotor body and the N pole permanent magnet faces are arranged said rotation sensor A rotation sensor device including the rotation sensor.

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